Magnetron sputtering device and magnetron sputtering method

Abstract

To suppress variations in a voltage applied to a target to form plasma in performing magnetron sputtering.SOLUTION: A magnetron sputtering apparatus comprises: a vacuum chamber; a plurality of sputtering mechanisms, each including a target, a magnet array, and a moving mechanism for reciprocating the magnet array between a first position and a second position; a power supply for forming plasma by supplying power to the target so that selected sputtering mechanisms form a film on a substrate; a gas supplier for supplying a gas for forming the plasma into the vacuum chamber; and a controller for outputting a control signal, in performing the film formation, such that the magnet array of the selected sputtering mechanisms and the magnet array of unselected sputtering mechanisms, extension lines of moving paths of these magnet arrays thereof intersecting each other in plan view, are moved synchronously so as not to get near each other.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a magnetron sputtering apparatus and a magnetron sputtering method. [Background technology]

[0002] In manufacturing semiconductor devices, various films are formed on semiconductor wafers (hereinafter referred to as wafers) serving as substrates, and this film formation may be performed using a magnetron sputtering apparatus. Patent Document 1 discloses an example of a magnetron sputtering apparatus. The apparatus in Patent Document 1 includes a chamber having four sets of cathodes, targets, and magnet mechanisms; a shutter with an opening that is rotatable within the chamber so that only the targets used for film formation face the substrate through the opening; and a partition member outside the chamber that separates the magnet mechanisms. It also discloses that the partition member and the shutter are made of a magnetic material to prevent the magnetic field generated by the magnet mechanism associated with the target used for film formation from being distorted by the magnetic fields generated by other magnet mechanisms. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2005-48222 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can suppress fluctuations in the voltage applied to a target to form plasma when performing magnetron sputtering. [Means for solving the problem]

[0005] The magnetron sputtering apparatus of the present disclosure includes a vacuum vessel for storing a substrate; a plurality of sputtering mechanisms each including a target having one surface facing the inside of the vacuum vessel, a magnet array, and a moving mechanism for moving the magnet array back and forth between a first position and a second position on the other surface side of the target to sputter the target; a power supply for supplying power to the target to form plasma, with some of the plurality of sputtering mechanisms as selected sputtering mechanisms and the remaining sputtering mechanisms as non-selected sputtering mechanisms, so that a film is deposited on the substrate by the selected sputtering mechanism; a gas supply unit that supplies a gas for forming the plasma into the vacuum chamber; a control unit that controls the positions of the magnet arrays of the non-selected sputtering mechanisms so that the magnet arrays reach the first position or the second position at the same time when a distance between the first position and the second position of the magnet array in the selected sputtering mechanism and a distance between the first position and the second position of the magnet array in the non-selected sputtering mechanisms are different during the film deposition; Equipped with picture, When the magnet array in the selected sputtering mechanism is located at a position where the arrival timings of the magnet arrays are aligned, either the first position or the second position, the magnet array of the non-selected sputtering mechanism is located at one of the first position and the second position, which is farther from the magnet array of the selected sputtering mechanism; The control unit moves the magnet array of the selected sputtering mechanism and the magnet array of the non-selected sputtering mechanism, whose extension lines of the movement paths of the magnet arrays intersect in a plan view, in synchronization so as not to be close to each other. . Another magnetron sputtering apparatus of the present disclosure includes: a vacuum vessel for storing a substrate; a plurality of sputtering mechanisms each including a target having one surface facing the inside of the vacuum vessel, a magnet array, and a moving mechanism for moving the magnet array back and forth between a first position and a second position on the other surface side of the target to sputter the target; a power supply for supplying power to the target to form plasma, with some of the plurality of sputtering mechanisms as selected sputtering mechanisms and the remaining sputtering mechanisms as non-selected sputtering mechanisms, so that a film is deposited on the substrate by the selected sputtering mechanism; a gas supply unit that supplies a gas for forming the plasma into the vacuum chamber; a control unit that controls the positions of the magnet arrays of the non-selected sputtering mechanisms so that the magnet arrays reach the first position or the second position at the same time when a distance between the first position and the second position of the magnet array in the selected sputtering mechanism and a distance between the first position and the second position of the magnet array in the non-selected sputtering mechanisms are different during the film deposition; Equipped with the plurality of sputtering mechanisms are arranged in a circumferential direction of the vacuum vessel on a ceiling portion of the vacuum vessel, extension lines of the movement paths of the magnet arrays of the sputtering mechanisms adjacent to each other in the circumferential direction in a plan view intersect with each other, and film deposition is performed by one of the sputtering mechanisms adjacent to each other in the circumferential direction as the selected sputtering mechanism and the other as the non-selected sputtering mechanism, The sputtering mechanisms are arranged in a circumferential direction of the vacuum vessel, and four of them are arranged in a circumferential direction of the vacuum vessel. When the sputtering mechanisms adjacent to each other in the circumferential direction in a plan view are grouped together, the extension lines of the movement paths of the magnet arrays intersect in each group, and the magnet arrays move synchronously so as not to come close to each other. [Effects of the Invention]

[0006] According to the present disclosure, when performing magnetron sputtering, fluctuations in the voltage applied to the target to generate plasma can be suppressed. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a vertical cross-sectional side view of a magnetron sputtering apparatus according to an embodiment of the present invention. [Figure 2] FIG. 2 is a top view of the magnetron sputtering apparatus. [Figure 3] FIG. 2 is a bottom view of a magnet array provided in the magnetron sputtering apparatus. [Figure 4] 4 is a top view of the magnetron sputtering apparatus showing an example of operation of the magnet array. FIG. [Figure 5] 4 is a top view of the magnetron sputtering apparatus showing an example of operation of the magnet array. FIG. [Figure 6] 4 is a top view of the magnetron sputtering apparatus showing an example of operation of the magnet array. FIG. [Figure 7] 10 is a top view of the magnetron sputtering apparatus showing another example of operation of the magnet array. FIG. [Figure 8] 10 is a top view of the magnetron sputtering apparatus showing another example of operation of the magnet array. FIG. [Figure 9] FIG. 2 is a top view of the magnetron sputtering apparatus showing an example of the arrangement of the magnet array. [Figure 10] FIG. 2 is a top view of the magnetron sputtering apparatus showing an example of the arrangement of the magnet array. [Figure 11] FIG. 4 is a vertical cross-sectional side view showing another example of the configuration of the magnetron sputtering apparatus. [Figure 12] FIG. 2 is a vertical cross-sectional side view of a sputtering mechanism provided in the magnetron sputtering apparatus. [Figure 13] FIG. 2 is a development view showing a vertical cross-sectional side view of a ceiling portion of the magnetron sputtering apparatus. [Figure 14] FIG. [Figure 15] FIG. 10 is a top view of a modified example of the magnetron sputtering apparatus. [Figure 16] FIG. 10 is a top view of a modified example of the magnetron sputtering apparatus. [Figure 17] FIG. 2 is a top view of the magnetron sputtering apparatus showing the operation of the apparatus in an evaluation test. [Figure 18] FIG. 10 is a graph showing the results of an evaluation test. [Figure 19] FIG. 10 is a graph showing the results of an evaluation test. [Figure 20] FIG. 10 is a graph showing the results of an evaluation test. DETAILED DESCRIPTION OF THE INVENTION

[0008] A magnetron sputtering apparatus 1 according to one embodiment of the present disclosure will be described with reference to the longitudinal side view of Fig. 1 and the top view of Fig. 2. Fig. 1 is a cross-sectional view taken along the line AA' in Fig. 2. The magnetron sputtering apparatus 1 includes a grounded metal vacuum vessel 11. The vacuum vessel 11 is circular, and a transfer port 12 for loading and unloading a wafer W is opened in a side wall of the vacuum vessel 11. The transfer port 12 is opened and closed by a gate valve 13.

[0009] A circular stage 14 equipped with a heater is provided within the vacuum chamber 11, on which a wafer W is placed horizontally and heated to a desired temperature. The stage 14 is provided with lift pins that are raised and lowered by a lift mechanism, and the wafer W is transferred between the transfer mechanism and the stage 14 by the lift pins; however, these lift pins, lift mechanism, and transfer mechanism are not shown. The stage 14 is connected to a rotation mechanism 16 provided outside the vacuum chamber 11 via a vertical rotation shaft 15. During the film formation process, the rotation mechanism 16 rotates the stage 14, and the wafer W placed on the stage 14 rotates around the central axis of the wafer W. In the figure, reference numeral 17 denotes a seal member provided around the rotation shaft 15, which ensures airtightness within the vacuum chamber 11.

[0010] The vacuum vessel 11 is also provided with an exhaust mechanism 18 composed of a valve, a vacuum pump, etc., which evacuates the inside of the vacuum vessel 11 to create a vacuum atmosphere of a desired pressure. The vacuum vessel 11 is also provided with a gas supply unit 21. The gas supply unit 21 is connected to an Ar (argon) gas supply mechanism 22 which is provided outside the vacuum vessel 11. The Ar gas supply mechanism 22 includes a supply source of Ar gas, which is a gas for plasma formation, a mass flow controller, a valve, etc., and is configured to be able to supply Ar gas at a desired flow rate to the Ar gas supply unit 21, and the Ar gas is discharged from the gas supply unit 21 into the vacuum vessel 11.

[0011] The magnetron sputtering apparatus 1 includes sputtering mechanisms 3A to 3D. The sputtering mechanisms 3A to 3D each include a target 31, an electrode formation plate 32, a magnet array 33, a movement mechanism 34, and a holder 35 as components, and are similar in configuration to one another except that the target 31 is made of a different material. Hereinafter, to clarify which sputtering mechanism each component of the sputtering mechanisms 3A to 3D belongs to, the same alphabetic character as the alphabetic character representing the sputtering mechanism will be added after the numerical symbol. Taking the components of sputtering mechanism 3A as an example, the target, electrode formation plate, magnet array, movement mechanism, and holder that make up the sputtering mechanism 3A will be referred to as 31A, 32A, 33A, 34A, and 35A, respectively.

[0012] The materials constituting the targets 31A, 31B, 31C, and 31D of the sputtering mechanisms 3A to 3D are, for example, Ta (tantalum), Cu (copper), CoFeB (cobalt, iron, boron), and Ru (ruthenium), respectively. The magnetron sputtering apparatus 1 is configured so that films made of these materials can be individually formed on the wafer W.

[0013] Of the sputtering mechanisms 3A to 3D, sputtering mechanism 3A will be described as a representative. The electrode formation plate 32A is configured in a roughly rectangular plate shape and is arranged to cover an opening provided in the ceiling of vacuum vessel 11. A rectangular target 31A is provided below electrode formation plate 32A and overlaps electrode formation plate 32A, with the lower surface (one surface) of target 31A facing the inside of vacuum vessel 11. A holder 35A is provided to surround the side periphery of electrode formation plate 32A, connects the ceiling of vacuum vessel 11 and electrode formation plate 32A to each other, and holds electrode formation plate 32A to the ceiling. The holder 35A is equipped with an insulating member 36, which insulates the vacuum vessel 11 from the electrode formation plate 32A and the target 31.

[0014] A magnet array 33A is provided above the electrode formation plate 32A and in close proximity to the electrode formation plate 32A. Therefore, the magnet array 33A is provided on the upper surface (other surface) of the target 31A. FIG. 3 shows the underside of the magnet array 33A. The magnet array 33A has a generally rectangular parallelepiped shape and is composed of a rectangular support 37 and magnets 38 and 39 provided below the support 37. The magnet 38 is provided in the center of the support 37. The magnet 39 is provided apart from the magnet 38 and along the periphery of the support 37. The magnetic poles on the lower side of the magnet 38 and the magnetic poles on the lower side of the magnet 39 are different from each other. Therefore, the magnetic poles on the upper side of the magnet 38 and the magnetic poles on the upper side of the magnet 39 are also different from each other.

[0015] The support 37 of the magnet array 33A is connected to a movement mechanism 34A. The movement mechanism 34A includes a motor. Driven by the motor, the magnet array 33A moves linearly along the upper surface of the electrode formation plate 32A between one end and the other end in the longitudinal direction of the electrode formation plate 32A.

[0016] The electrode formation plate 32A is connected to a DC power supply 41A, and the electrode formation plate 32A and the target 31A function as a cathode. With Ar gas supplied into the vacuum chamber 11, power is supplied from the DC power supply 41A to the electrode formation plate 32A, generating plasma in the space below the target 31A. During plasma generation, the magnet array 33A reciprocates, i.e., oscillates, between one end and the other end in the longitudinal direction of the electrode formation plate 32A.

[0017] In the space below the target 31A, the plasma density increases in the region overlapping the magnet array 33A. That is, sputtering is promoted in the region below the target 31A that overlaps the magnet array 33A, and many particles are emitted, which adhere to the wafer W and form a film. By oscillating the magnet array 33A as described above, it is possible to prevent only a portion of the target 31A from being locally sputtered, thereby increasing the utilization efficiency of the target 31A.

[0018] DC power supplies are also connected to electrode formation plates 32B-32D of sputtering mechanisms 3B-3D, respectively; these DC power supplies are indicated as 41B-41D. Therefore, power can be individually supplied to targets 31A-31D of sputtering mechanisms 3A-3D via electrode formation plates 32A-32D, and plasma is generated only below the targets 31A-31D to which power is supplied. In other words, only some of targets 31A-31D can be selected and sputtered, and a film made of the material of the sputtered targets can be formed on wafer W. Of sputtering mechanisms 3A-3D, the sputtering mechanism to which power is supplied so as to generate plasma is the selected sputtering mechanism, and the remaining sputtering mechanisms are the unselected sputtering mechanisms. In this example, film formation is performed using only one of sputtering mechanisms 3A-3D as the selected sputtering mechanism.

[0019] When forming plasma and performing film formation processing on wafers W as described above, DC power supplies 41A-41D operate to supply constant power to electrode formation plates 32A-32D connected thereto. A voltage monitoring unit (not shown) is also provided to monitor the voltage (discharge voltage) applied to targets 31A-31D via electrode formation plates 32A-32D. When the discharge voltage of a DC power supply exceeds a tolerable value, the power supply to the target is stopped.

[0020] The arrangement of the electrode formation plates 32A to 32D will be described in more detail. The ceiling of the vacuum vessel 11 is inclined so that the center P side is higher than the peripheral edge side, and the electrode formation plates 32A to 32D are inclined so that the ends facing the center P are higher than the ends facing the peripheral edge of the ceiling, so that they are parallel to the inclined ceiling. Note that Figure 1 shows a cross section of the ceiling of the vacuum vessel 11 as seen from the peripheral edge side toward the center P, and therefore does not show the inclinations of the ceiling and electrode formation plates 32A to 32D.

[0021] The electrode formation plates 32A to 32D are arranged away from the center P and have rotational symmetry about the center P in a plan view. More specifically, when viewed circumferentially from the center P around the vacuum vessel 11, the electrode formation plates 32A to 32D are provided at 90° intervals and are arranged counterclockwise in the order 32A, 32B, 32C, and 32D. Therefore, the sputtering mechanisms 3A to 3D are arranged in the circumferential direction on the ceiling of the vacuum vessel 11. The length direction of the electrode formation plates 32A to 32D (i.e., the movement direction of the magnet arrays 33A to 33D) is perpendicular to the radial direction of the ceiling in a plan view.

[0022] Therefore, when sputtering mechanisms 3A to 3D are paired by adjacent ones in the circumferential direction in a plan view, the extensions of the movement directions of the magnet arrays in each pair intersect, more specifically, are perpendicular to each other. Specifically, when sputtering mechanisms 3A and 3B are paired, the extensions of the movement directions of the magnet arrays 33A and 33B are perpendicular to each other in a plan view, and when sputtering mechanisms 3A and 3C are paired, the extensions of the movement directions of the magnet arrays 33A and 33C are perpendicular to each other in a plan view. When other combinations of sputtering mechanisms are paired by adjacent ones in the circumferential direction in a plan view, the movement directions of the magnet arrays are the same as those of the magnet arrays 33A and 33B.

[0023] Furthermore, because the sputtering mechanisms 3A-3D are arranged as described above, when any one sputtering mechanism is viewed from the periphery toward the center P of the vacuum vessel 11, the magnet arrays 33A-33D of that sputtering mechanism move left and right. As described above, the magnet arrays 33A-33D corresponding to the electrode formation plates 32A-32D (which constitute the same sputtering mechanism as the electrode formation plates) move back and forth over the electrode formation plates to which power is supplied to generate plasma, among the electrode formation plates 32A-32D, to perform sputtering. Regarding the reciprocating movement path for this sputtering, the right end is defined as a right position R, and the left end is defined as a left position L, as viewed from the periphery toward the center P, as described above. One of the right position R and the left position L is defined as a first position, and the other is defined as a second position. In this example, the positional relationship between the electrode formation plate and the right position R or left position L of the magnet array corresponding to that electrode formation plate is the same among the sputtering mechanisms 3A-3D. In FIG. 2, the magnet arrays 33A to 33D located at the right position R are indicated by chain lines, and the magnet arrays 33A to 33D located at the left position L are indicated by solid lines.

[0024] The magnetron sputtering apparatus 1 includes a control unit 10, which is a computer (see FIG. 1 ), and this control unit 10 includes a program. This program is stored on a storage medium, such as a compact disc, a hard disk, a magneto-optical disc, or a DVD, and is installed in the control unit 10. The control unit 10 outputs control signals to each component of the magnetron sputtering apparatus 1 using the program to control its operation. Specifically, the control signals control operations such as the on / off switching of DC power supplies 41A-41D, the rotation of stage 14 by rotation mechanism 16, the supply and cutoff of Ar gas by Ar gas supply mechanism 22, the exhaust by exhaust mechanism 18, and the oscillation of magnet arrays 33A-33D by movement mechanisms 34A-34D. The program is organized into steps so that the operations of each component can be controlled in this manner and the processes described below can be performed.

[0025] In the magnetron sputtering apparatus 1, the operation of the magnet arrangements 33A-33D is controlled so as to suppress magnetic field interference from other magnet arrangements with the magnetic field generated by the magnet arrangement of the sputtering mechanism to which power is supplied for plasma generation. By suppressing magnetic field interference in this way, changes in the plasma intensity are prevented, which in turn suppresses fluctuations in the DC voltage applied to the electrode formation plate, resulting in a reduction in the maximum value of that voltage (maximum discharge voltage).

[0026] An example of the operation of the magnetron sputtering apparatus 1 will be specifically described below with reference to the top views of Figures 4 to 6. In Figures 4 to 6 and the subsequent top views, in order to clearly show which targets are being supplied with power to perform the film formation process, only DC power supplies 41A to 41D that are supplying power to the targets are shown, and those that are not being supplied with power are not shown.

[0027] First, wafer W is transferred into vacuum chamber 11 and placed on stage 14, where it is heated to a desired temperature and rotated. An exhaust mechanism 18 creates a vacuum atmosphere at a desired pressure inside vacuum chamber 11, and Ar gas is supplied into vacuum chamber 11 at a desired flow rate. Then, with magnet arrays 33A-33D of sputtering mechanisms 3A-3D positioned, for example, at left position L, power is supplied from DC power supply 41C to electrode formation plate 32C of sputtering mechanism 3C, and Ar gas is converted into plasma below target 31C connected to electrode formation plate 32C.

[0028] While the plasma is being generated in this manner, the motors constituting the moving mechanisms 34A to 34D rotate at the same speed, causing the magnet arrays 33A to 33D to start moving at the same speed toward the right position R (FIG. 4). Note that FIG. 5 shows the magnet arrays 33A to 33D positioned midway between the right position R and the left position L.

[0029] When the magnet arrays 33A to 33D simultaneously reach the right position R, the rotation direction of each motor is switched and they rotate at the same speed, and the magnet arrays 33A to 33D start moving at the same speed toward the left position L (FIG. 6). As a result, the magnet arrays 33A to 33D pass through the positional state shown in FIG. 5, and simultaneously reach the left position L, and then start moving again at the same speed toward the right position R as shown in FIG. 4.

[0030] Thereafter, the movement (oscillation) of the magnet arrays 33A to 33D shown in FIGS. 4 to 6 is repeated. Therefore, all of the magnet arrays 33A to 33D move synchronously toward the same position, either the right position R or the left position L. Here, "moving synchronously" means that, as the multiple magnet arrays reciprocate along their respective movement paths (oscillation paths), they move together toward one end of the movement path and then toward the other end of the movement path. Consider an imaginary circle centered at the center P of the vacuum vessel 11 and passing through the centers of the magnet arrays 33A to 33D in a plan view. Because the magnet arrays 33A to 33D move synchronously as described above, the relative positions of the magnet arrays 33A to 33D on this imaginary circle are the same when the magnet arrays 33A to 33D are located at the left position L and when they are located at the right position R. For example, the speed at which the magnet arrays 33A to 33D move toward the right position R is equal to the speed at which they move toward the left position L, and the magnet arrays 33A to 33D are periodically positioned at the right position R and the left position L, respectively.

[0031] During such synchronized oscillation, while the magnet array 33C of the sputtering mechanism 3C to which power is supplied moves toward the left position L, the magnet array 33B moves toward the left position L so as not to approach the magnet array 33C. While the magnet array 33C moves toward the right position R, the magnet array 33D (another magnet array) moves toward the right position R so as not to approach the magnet array 33B. By synchronously oscillating the magnet arrays 33B, 33C, and 33D in this manner, the magnet array 33C is prevented from approaching the magnet arrays 33B and 33D, whose movement paths intersect with each other. Therefore, the magnetic field generated by the magnet array 33C is prevented from being interfered with by the magnetic fields generated by the magnet arrays 33B and 33D.

[0032] Furthermore, because the magnet arrays 33A and 33C are positioned relatively far apart, the magnetic field generated by the magnet array 33C is less susceptible to interference from the magnetic field generated by the magnet array 33A. As described above, the magnet arrays 33A and 33C move synchronously toward the same position, either the right position R or the left position L. As a result, both the magnet arrays 33A and 33C are positioned at the right position R or the left position L, and the distance between the magnet arrays 33A and 33C becomes longer (see FIGS. 4 and 6). This longer distance is believed to further reliably suppress magnetic field interference between the magnet arrays 33A and 33C.

[0033] In this way, the magnetic field generated by magnet array 33C in sputtering mechanism 3C for generating plasma is less susceptible to interference from the magnetic fields generated by magnet arrays 33A, 33B, and 33D. Therefore, changes in plasma intensity below target 31C due to this magnetic field interference are suppressed, and as a result, fluctuations in voltage applied to target 31C are suppressed. As magnet array 33C swings, the region of relatively high plasma intensity, i.e., the region of target 31C where sputtering is promoted, moves along the underside of target 31C, and sputter particles, which are CoFeB, released by the sputtering adhere to the surface of wafer W, forming a CoFeB film.

[0034] After a predetermined time has elapsed since the start of power supply to target 31C, DC power supply 41C is turned off, halting the power supply to electrode formation plate 32C. Instead, one of DC power supplies 41A, 41B, or 41D is turned on, starting the power supply to one of targets 31A, 31B, or 31D. When power is supplied to one of targets 31A, 31B, or 31D, the magnet arrays 33A-33D synchronously swing toward the same position (right position R or left position L), just as when power is supplied to target 31C. As described above, sputtering mechanisms 3A-3D are rotationally symmetric. Therefore, the magnetic field of the magnet array corresponding to the target to which power is supplied (one of targets 31A, 31B, or 31D) is not susceptible to magnetic field interference from other magnet arrays, similar to the magnetic field of magnet array 33C when sputtering target 31C. Therefore, a film made of the material of the target is formed on the wafer W while the fluctuation of the voltage applied to the target is suppressed.

[0035] For example, the target to which power is supplied via the electrode formation plate is sequentially switched among the targets 31A-31D. During plasma generation by the power supply, the magnet arrays 33A-33D oscillate synchronously toward the same position (right position R or left position L). In other words, when the sputtering mechanisms 3A-3D are grouped into pairs of sputtering mechanisms adjacent in the circumferential direction in a plan view, the magnet arrays in each pair oscillate synchronously without approaching each other. This suppresses fluctuations in the voltage applied to the targets 31A-31D, allowing films to be sequentially deposited on the wafer W. Once a layered film with the desired structure is formed, the supply of Ar gas into the vacuum chamber 11 and the supply of power to the targets 31A-31D are stopped. This stops the plasma generation in the vacuum chamber 11, and the movement of the magnet arrays 33A-33D and the rotation of the wafer W are also stopped. The wafer W is then unloaded from the vacuum chamber 11 by the transfer mechanism.

[0036] As described above, the magnetron sputtering apparatus 1 can suppress magnetic field interference between the magnet arrays 33A-33D, thereby suppressing fluctuations in the voltage applied to each of the electrode formation plates 32A-32D. Therefore, even if the power supplied to the electrode formation plates 32A-32D is set to a relatively high value, the maximum voltage applied to each of the electrode formation plates 32A-32D can be set to a relatively small value. This prevents the DC power supplies 41A-41D from stopping due to the voltage exceeding the allowable value, thereby enabling stable processing of the wafers W. Furthermore, by setting the power supplied to the electrode formation plates 32A-32D to a high value, the Ar gas can be efficiently converted into plasma. This allows for a reduction in the flow rate of Ar gas supplied to the vacuum chamber 11 and an increase in the film formation rate on the wafers W.

[0037] As described above, the magnetron sputtering apparatus 1 is configured to be capable of depositing films of multiple types of materials on the wafer W. Therefore, it is suitable for use in the manufacture of MTJ (Magnetic Tunnel Junction) elements, which are multilayer films used in, for example, MRAM (Magnetoresistive Random Access Memory) and magnetic heads of hard disks. However, the application is not limited to this. Furthermore, the magnetron sputtering apparatus 1 is not limited to being used for forming multilayer films, and may also be used for forming single-layer films.

[0038] In the above example, the magnet arrays 33A to 33D are described as oscillating in the same manner, but this oscillation may differ. Specifically, for example, the size of the gap between the left position L and the right position R may differ among the magnet arrays 33A to 33D. In this case, the speeds of the magnet arrays 33A to 33D moved by the movement mechanisms 34A to 34D may be made different depending on the gap, so that the timings at which the magnet arrays 33A to 33D reach the right position R and the timings at which they reach the left position L may be synchronized.

[0039] Furthermore, during one reciprocating motion of the magnet arrays 33A-33D, there may be a slight difference between the timing at which the magnet arrays 33A-33D reach the right position R and the timing at which they reach the left position L. Therefore, due to limitations in the precision of the operational control of the sputtering mechanisms 3A-3D, there may be a difference in the operation of the magnet arrays 33A-33D. However, if the difference in the timing at which the magnet arrays 33A-33D reach the right position R and the left position L is large, it may be impossible to sufficiently separate the magnet array of the sputtering mechanism to which power is supplied from the magnet arrays adjacent to that magnet array in the circumferential direction. Therefore, it is preferable to minimize the difference in the timing at which the magnet arrays 33A-33D reach the right position R (the difference between the arrival time of the magnet array that reaches the right position R earliest and the arrival time of the magnet array that reaches the right position R latest), preferably within one second. Similarly, it is preferable to minimize the difference in the timing at which the magnet arrays 33A-33D reach the left position L, preferably within one second.

[0040] The operation of synchronously swinging all of the magnet arrays 33A to 33D described above toward the same position out of the left position L and the right position R is called fully synchronous swing. Processing of the wafer W is not limited to this fully synchronous swing. Figures 7 and 8 show another example of the operation of the magnet arrays 33A to 33D, and the explanation will be focused on the differences from fully synchronous swing.

[0041] For example, with the magnet arrays 33A and 33B positioned at the right position R and the magnet arrays 33C and 33D positioned at the left position L, power is supplied to the electrode formation plate 32C, the target 31C connected to the electrode formation plate 32C is sputtered, and film formation begins (FIG. 7). The magnet arrays 33A and 33B then move to the left position L, and the magnet arrays 33C and 33D move to the right position R (FIG. 8). Subsequently, the magnet arrays 33A and 33B move to the right position R, and the magnet arrays 33C and 33D move to the left position L, respectively, and the arrangement of the magnet arrays 33A to 33D returns to the state shown in FIG. 7. After that, the series of movements of the magnet arrays 33A to 33D described above is repeated. Therefore, the arrangement of the magnet arrays 33A to 33D alternates between the state shown in FIG. 7 and the state shown in FIG. 8.

[0042] Even when the magnet arrays 33A to 33D are oscillated in this manner, fluctuations in the voltage applied to the electrode formation plate 32C are suppressed, as shown in the evaluation test described below. This is thought to be because, as in the case of fully synchronous oscillation, the magnet arrays 33C and 33D are not close to each other, thereby suppressing magnetic field interference between these magnet arrays. Furthermore, as shown in FIG. 8 , when the magnet array 33C moves from the right position R to the left position L, the magnet array 33B, which is circumferentially adjacent to the magnet array 33C, moves toward the right position R and moves away from the magnet array 33C. Therefore, compared to when the magnet array 33B is fixed at the left position L, the period during which the magnet arrays 33C and 33B are close to each other is shorter, and the magnetic field of the magnet array 33C is less susceptible to the magnetic field of the magnet array 33B.

[0043] However, when the magnet array 33C moves toward the right position R, it approaches the magnet array 33B moving toward the left position L, and at this time, there is a risk that the above-mentioned voltage fluctuations will become relatively large due to magnetic field interference between these magnet arrays 33C and 33B. Therefore, in order to more reliably suppress voltage fluctuations and reduce the risk of the DC power supply 41C stopping operation, it is more preferable to perform the above-mentioned fully synchronous oscillation.

[0044] 7 and 8, two circumferentially adjacent magnet arrays 33A to 33D form a pair, and within the same pair, they oscillate synchronously toward the same position between left position L and right position R, while between different pairs, they oscillate synchronously toward opposite positions. This will be referred to as semi-synchronous oscillation hereinafter. Note that, when performing processing using semi-synchronous oscillation in this manner, power is supplied to electrode formation plate 32C in the example of FIGS. 7 and 8 above, but power may be supplied to electrode formation plate 32A, 32B, or 32D instead of electrode formation plate 32C.

[0045] 7 and 8, the two magnet arrays 33C and 33D are oscillated synchronously toward the same left and right position, but the three magnet arrays 33B, 33C, and 33D may also be oscillated synchronously toward the same left and right position, which is preferable because magnetic field interference between the magnet arrays 33B and 33C is more reliably suppressed, as explained in the example of fully synchronous oscillation.

[0046] 9 shows another example of the operation of the magnet arrays 33A to 33C. In this example, power is also supplied to the electrode formation plate 32C of the sputtering mechanism 3C to generate plasma, and the magnet array 33C oscillates to process the wafer W. During this time, the magnet array 33B remains stationary at the right position R, and the magnet array 33D remains stationary at the left position L. In other words, the magnet arrays 33B and 33D of the sputtering mechanisms 3B and 3D (non-selected sputtering mechanisms) are stationary at either the left position L or the right position R, whichever is farther from the sputtering mechanism 3C (selected sputtering mechanism).

[0047] In this way, magnet arrays 33B and 33D are stopped at the farthest positions within their swinging range, which suppresses magnetic field interference between magnet array 33C and magnet arrays 33B and 33D, thereby suppressing fluctuations in voltage applied to electrode formation plate 32C, as in the examples described above. Note that in the example shown in Fig. 9, magnet array 33A is stopped at left position L, but because its relatively large distance from magnet array 33C suppresses magnetic field interference as described above, it does not have to be stopped at left position L; it may be stopped at right position R, or it may be swung left and right.

[0048] Although an example in which power is supplied to electrode formation plate 32C for processing has been shown, when power is supplied to another electrode formation plate, the magnet array to be oscillated and the magnet array to be stationary can be changed to have rotational symmetry from the example shown in Fig. 9. For example, when power is supplied to electrode formation plate 32B for processing, magnet array 33B corresponding to electrode formation plate 32B can be oscillated between right position R and left position L, while magnet arrays 33A and 33C can be stationary at left position L and right position R, respectively, to move them away from magnet array 33B.

[0049] Incidentally, for example, when power is supplied to sputtering mechanism 3C to perform processing as described with reference to FIG. 9, if it is possible to move magnet array 33B to a position farther from sputtering mechanism 3C than right position R using moving mechanism 34B, it is preferable to move it to such a position. Similarly, if it is possible to move magnet array 33D to a position farther from sputtering mechanism 3C than left position L using moving mechanism 34D, it is preferable to move it to such a position (see FIG. 10). In other words, when power is supplied to sputtering mechanisms 3B and 3D to perform processing, magnet arrays 33B and 33D are swung between left position L and right position R as shown in FIG. 2 and other figures to perform processing. However, to suppress magnetic field interference with magnet array 33C, magnet arrays 33B and 33D may be retracted to a position outside the swinging range for performing such processing, further away from magnet array 33C.

[0050] As shown in FIG. 9 and other figures, when power is supplied to the sputtering mechanism 3C for processing, it is believed that the greater the distance between the magnet arrays 33B and 33D and the magnet array 33C, the more magnetic field interference and voltage fluctuations can be suppressed. However, it is estimated that sufficient effect can be obtained as long as a certain distance is maintained between the magnet arrays 33B and 33D and the magnet array 33C. In other words, the magnet arrays 33B and 33D may be retracted slightly closer to the sputtering mechanism 3C than the positions shown in FIG. 9, and the magnet arrays 33B and 33D may be positioned at the farther side from the sputtering mechanism 3C of the right position R and the left position L. More specifically, the farther side from the sputtering mechanism 3C of the right position R and the left position L refers to the region farther from the sputtering mechanism 3C than the midpoint that bisects the reciprocating movement path between the right position R and the left position L. Note that in this region, the magnet arrays 33B and 33D do not need to be stationary and may be moving.

[0051] Next, a magnetron sputtering apparatus 1A, which is a variation of the magnetron sputtering apparatus 1, will be described with reference to the longitudinal side view of Figure 11, focusing on the differences from the magnetron sputtering apparatus 1A. Sputtering mechanisms 3A, 3B, 3C, and 3D of the magnetron sputtering apparatus 1A each include an elevating mechanism 30A, 30B, 30C, and 30D, respectively, whose operation is controlled by an output control signal from the control unit 10. For ease of illustration, Figure 11 shows only 30A and 30B out of these elevating mechanisms 30A to 30D. Furthermore, in this magnetron sputtering apparatus 1A, the sputtering mechanisms 3A to 3D have the same configuration, and Figure 12 shows a longitudinal side view of the sputtering mechanism 3A as a representative example, seen from a different direction than that shown in Figure 11.

[0052] The lifting mechanisms 30A-30D are provided on the ceiling of the vacuum chamber 11 and are connected to the moving mechanisms 34A-34D, respectively. The lifting mechanisms 30A-30D raise and lower the magnet arrays 33A-33D via the moving mechanisms 34A-34D in a direction perpendicular to the surface direction of the electrode formation plates 32A-32D, thereby moving the magnet arrays 33A-33D between processing positions close to the electrode formation plates 32A-32D and retracted positions above the processing positions. In Figure 12, the solid line indicates the state of the magnet array 33A when it is positioned at the processing position (first height position), and the dashed line indicates the state of the magnet array 33A when it is positioned at the retracted position (second height position).

[0053] FIG. 13 is a longitudinal and developed cross-sectional view of the magnetron sputtering apparatus 1A along the circumferential direction of the vacuum vessel 11. An example of the operation of the magnetron sputtering apparatus 1A will be described with reference to FIG. 13. For example, as described with reference to FIGS. 4 to 6, power is supplied to the target 31C, and the magnet arrays 33A to 33D are all synchronously oscillated to perform processing. During this process, the magnet array 33C oscillates at the processing position to generate plasma on the lower surface of the target 31C. The magnet arrays 33A, 33B, and 33D, which are not involved in plasma generation, oscillate at the retracted position. Because of the difference in height, the distance between the magnet array 33C and the magnet arrays 33A, 33B, and 33D is greater than in the processing example shown in FIGS. 4 to 6. This more reliably suppresses the magnetic field interference described above, and more reliably suppresses fluctuations in the voltage applied to the magnet array 33C.

[0054] This magnetron sputtering apparatus 1A can also be used when performing processing by semi-synchronous oscillation as explained in Figures 7 and 8, or when performing processing by stationary magnet arrays corresponding to targets to which no power is supplied as explained in Figure 9. In these cases, processing can be performed by positioning the magnet arrays corresponding to targets to which power is supplied at the processing position and the magnet arrays corresponding to targets to which no power is supplied at the retracted position.

[0055] While the above example illustrates the process of selecting one of the electrode formation plates 32A-32D of the sputtering mechanisms 3A-3D and supplying power to it, it is also possible to select multiple electrode formation plates 32A-32D and supply power to them. In the example shown in FIG. 14, power is supplied to the electrode formation plates 32C and 32D while performing full synchronous oscillation. Therefore, both targets 31C and 31D are sputtered, and an alloy film made of the materials constituting these targets 31C and 31D is formed on the wafer W. As described above, full synchronous oscillation prevents the magnet array 33C from approaching the other magnet arrays, and also prevents the magnet array 33D from approaching the other magnet arrays. Therefore, fluctuations in the voltage applied to the electrode formation plates 32C and 32D are suppressed.

[0056] Since the fully synchronous oscillation prevents the magnet arrays 33A-33D from approaching each other, the combination of targets to which power is supplied is not limited to the targets of circumferentially adjacent sputtering mechanisms as shown in FIG. 14. That is, power may be supplied to the target of any one of the sputtering mechanisms 3A-3D and the target of the sputtering mechanism two locations away from that one sputtering mechanism. Alternatively, power may be supplied to three targets of the sputtering mechanisms 3A-3D for processing. In this way, there may be more than one sputtering mechanism selected to perform plasma processing.

[0057] 15, when power is supplied to targets 31C and 31D for processing, magnet arrays 33C and 33D are moved synchronously toward the same position, either left position L or right position R. On the other hand, magnet array 33B may be stopped at right position R to prevent magnetic field interference with magnet array 33C, and magnet array 33A may be stopped at left position L to prevent magnetic field interference with magnet array 33D. When two sputtering mechanisms are positioned at positions away from the selected sputtering mechanism, either left position L or right position R, a plurality of sputtering mechanisms may be selected.

[0058] The number and layout of the sputtering mechanisms are not limited to the above-described examples. For example, as shown in FIG. 16, only three sputtering mechanisms 3A to 3C may be provided, each configured to oscillate along one side of a triangle with the center of gravity at the center P of the ceiling in a plan view. Even when only three sputtering mechanisms are provided, all of them can be oscillated synchronously to perform processing. FIG. 16 shows an example in which power is supplied to electrode formation plate 32A to perform processing. When power is supplied to electrode formation plate 32A to perform processing in this manner, magnet arrays 33B and 33C corresponding to the other electrode formation plates 32B and 32C may be stationary at left position L and right position R, respectively, so as to be away from electrode formation plate 32A, as shown in FIG.

[0059] Note that more than four sputtering mechanisms may be provided. Furthermore, AC power supplies may be connected to the electrode formation plates 32A-32D instead of DC power supplies 41A-41D, and plasma may be generated by applying an AC voltage. The magnet arrays 33A-33D need only be able to generate an appropriate magnetic field, and are not limited to the magnet arrangement described above, and may move along an arc rather than a straight line. Thus, the embodiments disclosed herein are illustrative in all respects and should not be considered restrictive. The above embodiments may be omitted, substituted, or modified in various ways without departing from the spirit and scope of the appended claims.

[0060] [Evaluation test] The evaluation tests related to this technology will be explained. Evaluation Test 1 In evaluation tests 1-1 to 1-3, the voltage applied to the electrode formation plate 32C was monitored while power was supplied to the electrode formation plate 32C and the magnet array 33C was oscillated in the magnetron sputtering apparatus 1. The operations of the magnet arrays other than the magnet array 33C were made different among evaluation tests 1-1 to 1-3.

[0061] In evaluation test 1-1, magnet arrays 33A, 33B, and 33D were stationary at left position L. Therefore, magnet array 33B was in a state close to magnet array 33C. In evaluation test 1-2, magnet arrays 33A to 33D were oscillated so as to perform the semi-synchronous oscillation described in Figures 7 and 8. In evaluation test 1-3, full synchronous oscillation described in Figures 4 to 6 was performed.

[0062] 18, 19, and 20 are graphs showing the results of evaluation tests 1-1, 1-2, and 1-3, respectively. The horizontal axis of the graphs represents the time elapsed since the start of the test. Although not shown, a shutter (not shown) is provided inside the vacuum chamber 11 to separate the stage 14 from the ceiling of the vacuum chamber 11. Time t1 indicates the timing when the shutter opens, enabling film formation on the wafer W. The vertical axis of the graphs represents the position of the magnet array and the voltage (unit: V) applied to the target 31C, respectively. For the positions of the magnet arrays 33A to 33D, a larger value indicates that they are closer to the right position R. Note that in evaluation tests 1-1 to 1-3, the magnet arrays 33A and 33B were oscillated in the same way, and therefore these positions are shown by a common graph line in the figures.

[0063] In Evaluation Tests 1-1 to 1-3, the maximum and minimum voltage values were detected after the voltage stopped rising sharply after time t1 and became relatively stable. In Evaluation Test 1-1, the maximum and minimum voltage values were 512V and 476V, respectively, so maximum value minus minimum value = 36V. In Evaluation Test 1-2, the maximum and minimum voltage values were 510V and 479V, respectively, so maximum value minus minimum value = 31V. In Evaluation Test 1-3, the maximum and minimum voltage values were 498V and 472V, respectively, so maximum value minus minimum value = 26V.

[0064] As described above, the maximum voltage and the maximum-minimum voltage were suppressed in Evaluation Test 1-2, which used semi-synchronous oscillation, and Evaluation Test 1-3, which used fully synchronous oscillation, compared to Evaluation Test 1-1. Between Evaluation Tests 1-2 and 1-3, Evaluation Test 1-3 exhibited greater suppression. Therefore, the results of this evaluation test demonstrate that preventing the distance between magnet arrays from becoming small can suppress the fluctuation of the voltage applied to generate plasma, and also suppress its maximum value. Furthermore, it was found that the degree of the voltage fluctuation varies depending on the degree of magnetic field interference caused by the small distance between magnet arrays. Furthermore, it was shown that for magnet arrays 33A-33D, fully synchronous oscillation as described in FIGS. 4-6 or semi-synchronous oscillation as described in FIGS. 7 and 8 is effective, with fully synchronous oscillation being more effective.

[0065] Evaluation Test 2 In evaluation tests 2-1 to 2-4, the magnet arrays 33A and 33C were stationary at the left position L, and the arrangement of the magnet arrays 33B and 33D was varied between evaluation tests 2-1 to 2-4. Power was supplied to the target 31C, and the voltage was monitored. The arrangement of the magnet arrays 33B and 33D on both circumferential sides of the target 31C was varied between evaluation tests 2-1 to 2-4. In evaluation test 2-1, the magnet arrays 33B and 33D were both arranged at the left position L, while in evaluation test 2-2, the magnet arrays 33B and 33D were arranged at the left position L and the right position R, respectively. In evaluation test 2-3, the magnet arrays 33B and 33D were arranged at the right position R and the left position L, respectively. Therefore, the arrangement of the magnet arrays 33B and 33D in evaluation test 2-3 was as shown in FIG. 9. In evaluation test 2-4, magnet arrays 33B and 33D were both placed at right position R. In evaluation tests 2-1 to 2-4, Ar gas was supplied into vacuum chamber 11 at 18 sccm, and the materials of targets 31A to 31D were different from those described in the embodiment: 31A was molybdenum, 33B and 33C were CoFeB, and 31D was CoFe. The Co content differed between targets 31B and 31C.

[0066] The maximum, minimum, and average values of the monitored voltages were 793 V, 649 V, and 716 V in Evaluation Test 2-1, and 809 V, 654 V, and 727 V in Evaluation Test 2-2. In Evaluation Test 2-3, the maximum, minimum, and average values were 790 V, 650 V, and 720 V, respectively. In Evaluation Test 2-4, the maximum, minimum, and average values were 800 V, 658 V, and 730 V, respectively. Thus, the voltage values were relatively high in Evaluation Tests 2-2 and 2-4, where magnet array 33D was positioned closer to magnet array 33C. Furthermore, between Evaluation Tests 2-1 and 2-3, where magnet array 33D was positioned relatively farther from magnet array 33C, the voltage values were lower in Evaluation Test 2-3, where magnet array 33B was positioned farther from magnet array 33C.

[0067] The results of this evaluation test 2 showed that by arranging the magnet arrays adjacent to the magnet array corresponding to the target to which voltage is applied at a distance from the circumferentially adjacent magnet arrays, it is possible to suppress voltage fluctuations and reduce the maximum voltage value. As mentioned above, this is thought to be because such an arrangement weakens the magnetic field interference between the magnet arrays. The results of this evaluation test 2 also showed that arranging each magnet array as explained in Figure 9 is effective. [Explanation of symbols]

[0068] W wafer 10 Control Unit 11 Vacuum container 14 Stages 3A~3D Sputtering mechanism 31A~31D Target 33A~33D Magnet array 34A~34D Moving mechanism 21 Gas supply section 41A~41D DC power supply

Claims

1. a vacuum vessel for storing the substrate; a plurality of sputtering mechanisms each including a target having one surface facing the inside of the vacuum vessel, a magnet array, and a moving mechanism for moving the magnet array back and forth between a first position and a second position on the other surface side of the target to sputter the target; a power supply for supplying power to the target to form plasma, with some of the plurality of sputtering mechanisms as selected sputtering mechanisms and the remaining sputtering mechanisms as non-selected sputtering mechanisms, so that a film is deposited on the substrate by the selected sputtering mechanism; a gas supply unit that supplies a gas for forming the plasma into the vacuum chamber; a control unit that controls the positions of the magnet arrays of the non-selected sputtering mechanisms so that the magnet arrays reach the first position or the second position at the same time when a distance between the first position and the second position of the magnet array in the selected sputtering mechanism and a distance between the first position and the second position of the magnet array in the non-selected sputtering mechanisms are different during the film deposition; Equipped with When the magnet array in the selected sputtering mechanism is located at a position where the arrival timings of the magnet arrays are aligned, either the first position or the second position, the magnet array of the non-selected sputtering mechanism is located at one of the first position and the second position, which is farther from the magnet array of the selected sputtering mechanism; The control unit of the magnetron sputtering device moves the magnet array of the selected sputtering mechanism and the magnet array of the non-selected sputtering mechanism, whose extension lines of the movement paths of the magnet arrays intersect in a planar view, in synchronization so that they do not come close to each other.

2. three or more sputtering mechanisms are provided, 2. The magnetron sputtering apparatus according to claim 1, wherein two or more sputtering mechanisms are selected to perform film deposition.

3. a vacuum vessel for storing the substrate; a plurality of sputtering mechanisms each including a target having one surface facing the inside of the vacuum vessel, a magnet array, and a moving mechanism for moving the magnet array back and forth between a first position and a second position on the other surface side of the target to sputter the target; a power supply for supplying power to the target to form plasma, with some of the plurality of sputtering mechanisms as selected sputtering mechanisms and the remaining sputtering mechanisms as non-selected sputtering mechanisms, so that a film is deposited on the substrate by the selected sputtering mechanism; a gas supply unit that supplies a gas for forming the plasma into the vacuum chamber; a control unit that controls the positions of the magnet arrays of the non-selected sputtering mechanisms so that the magnet arrays reach the first position or the second position at the same time when a distance between the first position and the second position of the magnet array in the selected sputtering mechanism and a distance between the first position and the second position of the magnet array in the non-selected sputtering mechanisms are different during the film deposition; Equipped with the plurality of sputtering mechanisms are arranged in a circumferential direction of the vacuum vessel on a ceiling portion of the vacuum vessel, extension lines of the movement paths of the magnet arrays of the sputtering mechanisms adjacent to each other in the circumferential direction in a plan view intersect with each other, and film deposition is performed by one of the sputtering mechanisms adjacent to each other in the circumferential direction as the selected sputtering mechanism and the other as the non-selected sputtering mechanism, The sputtering mechanisms are arranged in a circumferential direction of the vacuum vessel, and four of them are arranged in a circumferential direction of the vacuum vessel. When the sputtering mechanisms adjacent to each other in the circumferential direction in a plan view are grouped together, the extension lines of the movement paths of the magnet arrays intersect in each group, and the magnet arrays move synchronously so as not to come close to each other.

4. each of the plurality of sputtering mechanisms includes an elevating mechanism that elevates the magnet array between a first height position and a second height position that is farther from the target than the first height position; 4. The magnetron sputtering apparatus according to claim 1, wherein the magnet array of the selected sputtering mechanism reciprocates at the first height position, and the magnet array of the non-selected sputtering mechanism reciprocates at the second height position.

5. 5. The magnetron sputtering apparatus according to claim 1, wherein each of the magnet arrays moves between the first position and the second position at a different speed depending on the difference in the distance between the first position and the second position.

6. storing the substrate in a vacuum chamber; a step of reciprocating the magnet arrays in a plurality of sputtering mechanisms, each of which includes a target having one surface facing the inside of the vacuum vessel, a magnet array, and a movement mechanism, the magnet arrays being moved in mutually intersecting directions in a plan view, between a first position and a second position on the other surface side of the target in order to sputter the target; a step of generating plasma by supplying power to the target using a power source so that a film is formed on the substrate by using a selected sputtering mechanism among the plurality of sputtering mechanisms and a non-selected sputtering mechanism among the remaining sputtering mechanisms; supplying a gas for forming the plasma into the vacuum chamber by a gas supply unit; When performing the film deposition, if a distance between the first position and the second position of the magnet array in the selected sputtering mechanism is different from a distance between the first position and the second position of the magnet array in the non-selected sputtering mechanism, adjusting the timing at which each of the magnet arrays reaches the first position or the second position; and when the magnet array in the selected sputtering mechanism is located at one of the first position and the second position, at which the arrival timings of the magnet arrays are aligned, the magnet array in the non-selected sputtering mechanism is located at one of the first position and the second position, whichever is farther from the magnet array in the selected sputtering mechanism; The magnetron sputtering method includes a step of moving the magnet array of the selected sputtering mechanism and the magnet array of the non-selected sputtering mechanism, whose extension lines of the movement paths of the magnet arrays intersect in a planar view, in synchronization with each other so as not to be close to each other.

7. storing the substrate in a vacuum chamber; a step of reciprocating the magnet arrays in a plurality of sputtering mechanisms, each of which includes a target having one surface facing the inside of the vacuum vessel, a magnet array, and a movement mechanism, the magnet arrays being moved in mutually intersecting directions in a plan view, between a first position and a second position on the other surface side of the target in order to sputter the target; a step of generating plasma by supplying power to the target using a power source so that a film is formed on the substrate by using a selected sputtering mechanism among the plurality of sputtering mechanisms and a non-selected sputtering mechanism among the remaining sputtering mechanisms; supplying a gas for forming the plasma into the vacuum chamber by a gas supply unit; When performing the film deposition, if a distance between the first position and the second position of the magnet array in the selected sputtering mechanism is different from a distance between the first position and the second position of the magnet array in the non-selected sputtering mechanism, adjusting the timing at which each of the magnet arrays reaches the first position or the second position; Including, the plurality of sputtering mechanisms are arranged in a circumferential direction of the vacuum vessel on a ceiling portion of the vacuum vessel, extension lines of the movement paths of the magnet arrays of the sputtering mechanisms adjacent to each other in the circumferential direction in a plan view intersect with each other, and film deposition is performed by one of the sputtering mechanisms adjacent to each other in the circumferential direction as the selected sputtering mechanism and the other as the non-selected sputtering mechanism, The sputtering mechanisms are arranged in a circumferential direction of the vacuum vessel, and four of them are arranged in a circumferential direction of the vacuum vessel. The magnetron sputtering method includes a step of moving the sputtering mechanisms back and forth in a synchronized manner so that, when the sputtering mechanisms are grouped together, the extension lines of the movement paths of the magnet arrays intersect in each group, and the magnet arrays do not come close to each other.

Images