Plasma source using a planar helical coil.

Abstract

The present invention relates to a plasma source that uses a planar helical coil, and includes unit coils that extend from one end of a unit extension and extend in a circular shape to a unit extension terminal end within a single plane, and the unit coils are stacked in multiple units and include a connecting portion that connects the unit extension terminal end of one unit coil to one end of the unit extension of another unit coil.

Description

[Technical Field]

[0001] The present invention relates to a plasma source using a planar helical coil, and more particularly to a plasma source using a planar helical coil in which a plurality of unit coils formed in one plane are stacked and connected to each other via connectors extending in a direction perpendicular to the plane formed by the unit coils, thereby generating plasma inside a chamber. [Background technology]

[0002] In general, ensuring uniformity is very important in the process of manufacturing a semiconductor, and the uniformity of the semiconductor can be ensured or adjusted in the etching process in the semiconductor manufacturing process.

[0003] A semiconductor etching process can be performed inside a plasma chamber, which generates plasma within a reaction space and uses the plasma to perform the semiconductor etching process.

[0004] A plasma source for generating plasma is provided at the top of the plasma chamber, and representative examples of the plasma source include a capacitively coupled plasma (CCP) source and an inductively coupled plasma (ICP) source.

[0005] By utilizing an electric field, a capacitively coupled plasma (CCP) source can etch at a slightly higher pressure than an inductively coupled plasma (ICP). Although the CCP source has a slower etch rate, it offers superior selectivity and process repeatability.

[0006] However, the capacitively coupled plasma (CCP) source has a plasma density non-uniformity characteristic in which the plasma density at the center of the wafer is relatively higher than that at the edge of the wafer, and since the overall plasma density is low, a problem occurs in that high RF power must be applied to increase the plasma density.

[0007] Inductively coupled plasma (ICP) has the advantage of a higher overall plasma density than capacitively coupled plasma (CCP) sources by utilizing an induced magnetic field. Although ICP can increase the etching rate at a lower pressure than CCP sources, the plasma density at the center of the wafer is relatively higher than that at the edge of the wafer, resulting in low selectivity and poor process reproducibility.

[0008] As such, in the case of the conventional plasma source, there is a problem in that the plasma density at the center of the wafer is relatively higher than the plasma density at the edge of the wafer.

[0009] If the plasma density at the wafer center is relatively higher than that at the wafer edge, it becomes difficult to ensure uniformity at the wafer edge. Therefore, there is a need to develop a plasma source that can ensure uniformity at the wafer edge. Summary of the Invention [Problem to be solved by the invention]

[0010] The present invention is intended to solve the above-mentioned problems, and more specifically, relates to a plasma source using a planar helical coil in which a plurality of unit coils formed in one plane are stacked and connected to each other via connecting parts extending in a direction perpendicular to the plane formed by the unit coils, thereby generating plasma inside a chamber. [Means for solving the problem]

[0011] In order to solve the above-mentioned problems, the plasma source using a planar helical coil of the present invention is a plasma source provided at the top of a chamber for generating plasma, and includes unit coils extending from one end of a unit extension and extending in a circular shape to a unit extension end portion within a plane, and the unit coils are stacked in multiple units and include a connecting portion connecting the unit extension end portion of one unit coil to the unit extension one end portion of another unit coil.

[0012] In order to solve the above-mentioned problems, the connecting portion of the plasma source using a planar helical coil of the present invention may extend perpendicular to the plane formed by the unit coil, and the planes formed by the multiple unit coils may extend in a direction parallel to each other.

[0013] In order to solve the above-mentioned problems, the length of the connecting portion of the plasma source using a planar helical coil of the present invention is also 5 to 15 mm.

[0014] In order to solve the above-mentioned problems, in the plasma source using a planar helical coil of the present invention, a separation distance may be provided between the one end of the unit extension and the end of the unit extension of the unit coil.

[0015] In order to solve the above-mentioned problems, the diameter of the unit coil of the plasma source using a planar helical coil of the present invention is larger than the diameter or width of the wafer placed on the base plate inside the chamber, and the plane formed by the multiple unit coils is also aligned with the plane on which the wafer is placed.

[0016] In order to solve the above-mentioned problems, the plurality of unit coils of the plasma source using a planar helical coil of the present invention are arranged in the same direction from one end of the unit extension to the end of the unit extension.

[0017] In order to solve the above-mentioned problems, the plurality of unit coils of the plasma source using a planar helical coil of the present invention may include a first unit coil extending counterclockwise from one end of the unit extension to the end of the unit extension, and a second unit coil extending clockwise from one end of the unit extension to the end of the unit extension.

[0018] In order to solve the above-mentioned problems, the first unit coil and the second unit coil of the plasma source using a planar helical coil according to the present invention may be alternately stacked.

[0019] In order to solve the above-mentioned problems, in the plasma source using a planar helical coil of the present invention, a plurality of the first unit coils may be stacked, and then the second unit coil may be stacked, or a plurality of the second unit coils may be stacked, and then the first unit coil may be stacked.

[0020] In order to solve the above-mentioned problems, the present invention further includes an inner coil having a diameter smaller than the diameter or width of a wafer placed on a base plate inside a chamber of a plasma source using a planar helical coil, and the inner coil may include a plurality of inner unit coils each having a circular shape, and the plurality of inner unit coils may be provided on the same plane.

[0021] In order to solve the above-mentioned problems, the inner unit coil of the plasma source using a planar helical coil of the present invention may further include an inner connection part that extends from one end of the inner unit extension to an inner unit extension end part while forming a circular shape, and connects the inner unit extension end part of one inner unit coil to the one end of the inner unit extension of another inner unit coil.

[0022] In order to solve the above-mentioned problems, in the plasma source using a planar helical coil of the present invention, the plurality of inner connectors connecting the inner unit coils may extend in a direction parallel to each other.

[0023] In order to solve the above-mentioned problems, an inner separation distance may be provided between the inner unit extension one end and the inner unit extension end of the inner unit coil of the plasma source using a planar helical coil according to the present invention.

[0024] In order to solve the above-mentioned problems, the plurality of inner unit coils of the plasma source using a planar helical coil of the present invention may include a first inner unit coil extending counterclockwise from one end of the inner unit extension to the end of the inner unit extension, and a second inner unit coil extending clockwise from one end of the inner unit extension to the end of the inner unit extension. [Effects of the Invention]

[0025] The present invention relates to a plasma source using a planar helical coil. A plurality of unit coils each having a diameter larger than the diameter or width of a wafer are stacked and connected to each other via connectors extending perpendicular to the plane of the unit coils. This allows plasma to be generated inside a chamber, thereby improving plasma density at the edge of the wafer.

[0026] In addition, the present invention has an advantage in that a plurality of inner unit coils having a diameter smaller than the diameter or width of the wafer are provided on the same plane, the plurality of inner unit coils are connected via a connecting part, and plasma is generated inside the chamber, thereby enabling fine adjustment of plasma density at the center of the wafer. [Brief explanation of the drawings]

[0027] [Figure 1] 10A and 10B are diagrams illustrating a state in which a plurality of unit coils each having a diameter larger than the diameter or width of a wafer are stacked according to an embodiment of the present invention.

[0028] [Figure 2]10 is a diagram showing a state in which a plurality of unit coils are connected via connecting parts that extend in a direction perpendicular to the plane formed by the unit coils so that the extension directions of the unit coils are the same, according to an embodiment of the present invention.

[0029] [Figure 3] 10 is a diagram showing first and second unit coils having different extension directions alternately stacked according to an embodiment of the present invention; FIG.

[0030] [Figure 4] 10 is a diagram illustrating a state in which a plurality of first unit coils are stacked, and then second unit coils having an extension direction different from that of the first unit coils are stacked, according to an embodiment of the present invention.

[0031] [Figure 5] 10 is a diagram showing a state in which a plurality of internal unit coils each having a diameter smaller than the diameter or width of a wafer are provided on the same plane according to an embodiment of the present invention.

[0032] [Figure 6] 10 is a view showing a state in which a plurality of inner unit coils formed on the same plane are connected via inner connecting portions according to an embodiment of the present invention; FIG.

[0033] [Figure 7] 10 is a view showing that a first internal unit coil and a second internal unit coil having different extension directions are alternately extended according to an embodiment of the present invention. FIG.

[0034] [Figure 8] 10 is a view showing that a plurality of first internal unit coils are stacked, and then second internal unit coils extending in a direction different from that of the first internal unit coils are extended, according to an embodiment of the present invention. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0035] The present specification explains the principles of the present invention and discloses embodiments so as to clarify the scope of the present invention and enable those skilled in the art to practice the invention. The disclosed embodiments may be embodied in various forms.

[0036] The use of expressions such as "comprises" or "also comprises" in various embodiments of the present invention indicates the presence of the disclosed feature, operation, component, etc., and does not limit the presence of one or more additional features, operations, components, etc. Furthermore, in various embodiments of the present invention, terms such as "comprises" or "having" should be understood to specify the presence of a specified feature, number, step, operation, component, part, or combination thereof, but not to preclude the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0037] When a component is referred to as being "connected" or "coupled" to another component, it should be understood that the component may be directly connected or coupled to the other component, but that there may be other components between the component and the other component. On the other hand, when a component is referred to as being "directly connected" or "directly coupled" to another component, it should be understood that there are no other components between the component and the other component.

[0038] Terms such as "first" and "second" used in this specification may be used to describe various components, but the components are not limited by these terms. These terms are used only to distinguish one component from another.

[0039] The present invention relates to a plasma source using a planar helical coil, in which a plurality of unit coils formed in a single plane are stacked and connected via connecting parts extending in a direction perpendicular to the plane formed by the unit coils, thereby generating plasma inside a chamber.

[0040] The plasma source using the planar helical coil of the present invention generates a highly symmetric and uniform plasma, and the plasma source using the planar helical coil of the present invention can be used for inductively coupled plasma (ICP), which can provide a high etching rate and improve reproducibility and selectivity.

[0041] The plasma source using the planar helical coil of the present invention can provide a coil with excellent azimuthal symmetry, and the plasma source using the planar helical coil of the present invention can realize a concave plasma density inside the chamber as the pressure inside the chamber increases.

[0042] The plasma source using the planar helical coil of the present invention can realize a concave plasma density inside the chamber by increasing the plasma density from the inside (center) of the chamber to the outside (edge) of the chamber. Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the accompanying drawings.

[0043] 1 and 2, a plasma source using a planar helical coil according to an embodiment of the present invention may be provided in the upper part of a chamber 10. The chamber 10 includes a base plate 20 on which a wafer 30 may be placed, and an etching process is performed after the wafer 30 is placed on the base plate 20.

[0044] An RF generator 21 for applying a bias is coupled to the base plate 20, and a bias can be applied to the plasma through the RF generator 21 during etching.

[0045] The base plate 20 is disposed in the central portion of the chamber 10 , and by disposing the base plate 20 in the central portion of the chamber 10 , the wafer 30 can also be disposed in the central portion of the chamber 10 .

[0046] Conventional plasma sources have non-uniform characteristics in that the plasma density is high in the center of the chamber 10 and low at the edges of the chamber 10. This makes it difficult to ensure uniformity at the edges of the wafer 30.

[0047] To solve this problem, the plasma source using a planar helical coil according to an embodiment of the present invention can provide a coil with excellent azimuthal symmetry, and the plasma source using a planar helical coil according to an embodiment of the present invention can use a plasma source including the unit coil 110 and the connecting part 120. The unit coil 110 and the connecting part 120 also serve as an external coil 100 disposed outside the wafer 30.

[0048] The unit coil 110 is a coil through which current flows, and extends from a unit extension end 111 to a unit extension end 112 in a circular shape within a plane. The unit coil 110 extends in a circular shape within a plane, and a plurality of unit coils 110 can be stacked.

[0049] The unit extension end 111 of the unit coil 110 is the starting point of the unit coil 110 in one plane, and the unit extension end 112 is the ending point of the unit coil 110 in one plane.

[0050] According to an embodiment of the present invention, a separation distance 113 may be provided between the unit extension one end 111 and the unit extension end 112 of the unit coil 110 .

[0051] 2, the unit extension one end 111 and the unit extension end 112 do not contact each other, forming the separation distance 113. Since the unit extension one end 111 and the unit extension end 112 do not contact each other and the separation distance 113 is formed, current can flow in one direction, and plasma arcing can be prevented.

[0052] According to an embodiment of the present invention, the separation distance 113 of the unit coils 110 is the same. The unit coils 110 have the same diameter, and the unit coils 110 have the same length extending from the unit extension one end 111 to the unit extension end 112.

[0053] In this way, if the lengths of the unit coils 110 extending from the unit extension one end 111 to the unit extension end 112 are the same and the separation distances 113 are the same, the azimuthal angles formed by the unit coils 110 will be the same and the azimuthal symmetry will be achieved.

[0054] Referring to FIG. 2, the connecting portion 120 can connect one unit coil 110 to another unit coil 110, and the connecting portion 120 connects the unit extension end portion 112 of one unit coil 110 to the unit extension one end portion 111 of another unit coil 110.

[0055] As described above, since the unit coils 110 are stacked, one unit coil 110 may be provided directly above another unit coil 110. The connecting part 120 may connect one unit coil 110 to another unit coil 110 provided directly above the unit coil 110.

[0056] According to an embodiment of the present invention, the connecting portion 120 may extend perpendicular to a plane formed by the unit coils 110, and the planes formed by the unit coils 110 may extend in a direction parallel to each other.

[0057] That is, referring to FIG. 2, a plurality of unit coils 110 forming planes extending in a parallel direction are stacked, and the plurality of unit coils 110 can be connected via the connecting portions 120 extending perpendicular to the direction in which the unit coils 110 extend.

[0058] The plasma source using a helical coil according to an embodiment of the present invention may further include an RF power generator (radio frequency power generator) 140. RF power (radio frequency power) is applied to the unit coil 110 through the RF power generator 140, and plasma can be generated in the chamber 10 due to changes in the electromagnetic field excited by the unit coil 110.

[0059] According to an embodiment of the present invention, the length of the connecting portion 120 is 5 to 15 mm. Specifically, the length of the connecting portion 120 connecting the unit extension end portion 112 of one unit coil 110 to the unit extension one end portion 111 of another unit coil 110 is 5 to 15 mm.

[0060] If the length of the connecting portion 120 is too short (less than 5 mm), plasma arcing may occur between the unit coils 110, causing interference. Therefore, it is preferable that the length of the connecting portion 120 is greater than 5 mm.

[0061] Furthermore, if the length of the connecting part 120 is excessively long (longer than 15 mm), there is a risk of plasma flickering or plasma extinction occurring between the unit coils 110. Specifically, if the length of the connecting part 120 is excessively long, there is a risk of plasma ignition and plasma not being able to be formed through the unit coils 110. Therefore, it is preferable that the length of the connecting part 120 is shorter than 15 mm.

[0062] According to an embodiment of the present invention, the diameter of the unit coil 110 may be larger than the diameter or width of the wafer 30 placed on the base plate 20 inside the chamber 10 .

[0063] The unit coil 110 may also be an external coil disposed outside the wafer 30, and may be disposed outside the wafer 30 when the wafer 30 is placed on the base plate 20. For this purpose, it is preferable that the diameter of the unit coil 110 is larger than the diameter or width of the wafer 30.

[0064] Since a plurality of the unit coils 110 are stacked and arranged on the outside of the wafer 30, the plasma density at the edge of the wafer 30 can be improved, thereby preventing a decrease in uniformity at the edge of the wafer 30.

[0065] According to an embodiment of the present invention, the plane formed by the plurality of unit coils 110 is parallel to the plane on which the wafer 30 is placed. When the wafer 30 is placed on the base plate 20, the plane formed by the plate-shaped wafer 30 and the plane formed by the unit coils 110 may extend parallel to each other. As a result, an induction electric field parallel to the plane of the wafer 30 may be formed through the unit coils 110.

[0066] Referring to FIG. 2, the unit coils 110 are arranged in the same direction from the unit extension one end 111 to the unit extension end 112 .

[0067] The multiple unit coils 110 have the same direction from the unit extension one end 111 to the unit extension end 112, so that current can flow in the same direction (clockwise or counterclockwise).

[0068] 3 and 4, the plurality of unit coils 110 according to an embodiment of the present invention also includes a first unit coil 131 extending counterclockwise from the unit extension one end 111 to the unit extension end 112, and a second unit coil 132 extending clockwise from the unit extension one end 111 to the unit extension end 112.

[0069] The first unit coil 131 and the second unit coil 132 have opposite winding directions, and the first unit coil 131 and the second unit coil 132 extend in opposite directions, so that current flows in opposite directions. Here, the winding direction of the first unit coil 131 and the second unit coil 132 is also the direction in which current flows.

[0070] Specifically, the first unit coil 131 may be formed so that current flows counterclockwise, and the second unit coil 132 may be formed so that current flows clockwise.

[0071] 3, the first unit coil 131 and the second unit coil 132 may be alternately stacked. Specifically, the first unit coil 131 and the second unit coil 132 may be alternately stacked once each, so that currents may flow in different directions in the adjacent unit coils 110.

[0072] Also, referring to FIG. 4, a plurality of the first unit coils 131 may be stacked and then the second unit coils 132 may be stacked, or a plurality of the second unit coils 132 may be stacked and then the first unit coils 131 may be stacked.

[0073] More specifically, the first unit coils 131 and the second unit coils 132 may not be alternately stacked one after the other, but a plurality of the first unit coils 131 and a plurality of the second unit coils 132 may be stacked in any order.

[0074] According to an embodiment of the present invention, the plasma density can be finely adjusted by adjusting the number of stacked unit coils 110 and using a plurality of unit coils (the first unit coil 131 and the second unit coil 132) with different winding directions.

[0075] Specifically, by changing the length l of the plurality of unit coils 110, a variable inductance L can be obtained, and through this, the impedance Z can be changed. By changing the impedance, the current can be changed, and through this, the current density Ji can be changed, and therefore the plasma density can be changed.

[0076] In addition, if the first unit coil 131 and the second unit coil 132, which extend in opposite directions, are arranged at the same time, the induced magnetic fields are different, which changes the induced electric field parallel to the surface of the wafer 30, thereby changing the plasma density.

[0077] More specifically, by adjusting the direction in which the unit coils 110 having the same length are wound, the induction electric field parallel to the surface of the wafer 30 can be changed, thereby allowing for fine adjustment of the plasma density.

[0078] That is, by changing the coil length l depending on the number of stacked unit coils 110, the impedance Z and current can be changed, and the plasma density can be adjusted. Also, by adjusting the winding direction of a unit coil in a coil having a fixed length while the number of stacked unit coils is fixed, the induced magnetic field can be changed, and the induced electric field parallel to the surface of the wafer 30 can be changed, thereby changing the plasma density.

[0079] The plasma source using a planar helical coil according to an embodiment of the present invention further includes an internal coil 200. The internal coil 200 is a coil through which current flows, and is provided to precisely adjust the plasma density at the center of the wafer 30.

[0080] According to an embodiment of the present invention, the external coil 100 may be provided on the outside of the wafer 30 , and the internal coil 200 may be provided on the inside of the wafer 30 .

[0081] As described above, the external coil 100 can improve the plasma density at the edge of the wafer 30 and improve the uniformity of the wafer 30. At this time, if the internal coil 200 is used at the same time, the plasma density at the edge of the wafer 30 can be improved and the plasma density at the center of the wafer 30 can be finely adjusted.

[0082] Referring to FIG. 5, the internal coil 200 has a diameter smaller than the diameter or width of the wafer 30 placed on the base plate 20 inside the chamber 10, and the internal coil 200 includes a plurality of internal unit coils 210 each having a circular shape.

[0083] 6, the plurality of inner unit coils 210 may be provided on the same plane, specifically, the plurality of inner unit coils 210 may be formed in one layer.

[0084] The inner unit coil 210 may be extended from an inner unit extension end 211 to an inner unit extension terminal 212 while forming a circular shape. The inner unit extension end 211 of the inner unit coil 210 is a start point of the inner unit coil 210 being extended, and the inner unit extension terminal 212 is an end point of the inner unit coil 210 being extended.

[0085] According to an embodiment of the present invention, an inner gap 213 may be provided between the inner unit extension one end 211 and the inner unit extension end 212 of the inner unit coil 210 .

[0086] Referring to FIG. 6, the inner unit extension one end portion 211 and the inner unit extension end portion 212 are not in contact with each other, and the inner separation distance 213 is formed.

[0087] The inner unit extension one end 211 and the inner unit extension end 212 are not in contact with each other, and the inner separation distance 213 is formed, so that current flows in one direction and plasma arcing can be prevented.

[0088] 6, the internal coil 200 further includes an internal connection part 220. The internal connection part 220 can connect one internal unit coil 210 to another internal unit coil 210, and the internal connection part 220 connects an internal unit extension end part 212 of one internal unit coil 210 to an internal unit extension one end part 211 of another internal unit coil 210.

[0089] The internal coil 200 according to an embodiment of the present invention may include a plurality of internal unit coils 210 formed on the same plane, and the plurality of internal unit coils 210 may be connected to each other via the internal connection portion 220.

[0090] According to an embodiment of the present invention, the diameters of the plurality of inner unit coils 210 may gradually increase toward the outside. Specifically, the diameters of the plurality of inner unit coils 210 provided in one plane may increase toward the outside from the center.

[0091] Here, the plurality of internal connection parts 220 connecting the plurality of internal unit coils 210 may extend in parallel to each other. Referring to Fig. 6, the plurality of internal connection parts 220 may extend in parallel to each other on the same plane. Thus, the azimuth angles formed by the plurality of internal unit coils 210 may be the same and azimuthal symmetry may be achieved.

[0092] The plasma source using a helical coil according to the embodiment of the present invention may further include an internal RF power generator 240. RF power is applied to the internal unit coil 210 through the internal RF power generator 240, and plasma can be generated in the chamber 10 due to changes in the electromagnetic field excited by the internal unit coil 210.

[0093] In the plasma source using a planar helical coil according to an embodiment of the present invention, the unit coils 110 formed on one plane can increase the plasma density at the edge of the wafer 30 through the external coil 100, which is made up of multiple stacked unit coils 110.

[0094] The external coil 100 according to an embodiment of the present invention is also a helical coil having a diameter larger than the diameter or width of the wafer 30. By using the external coil 100, the plasma density inside the chamber 10 on which the wafer 30 is placed can be made to increase from the inside of the chamber 10 to the outside of the chamber 10.

[0095] The plasma source using a planar helical coil according to an embodiment of the present invention can precisely adjust the plasma density in the central portion (inside) of the chamber 10 through the inner coil 200, which includes a plurality of inner unit coils 210 arranged on the same plane. The inner coil 200 can also be a spiral coil having a diameter smaller than the diameter or width of the wafer 30.

[0096] When the plasma density is increased from the inside of the chamber 10 to the outside of the chamber 10 through the external coil 100, the plasma density can be finely adjusted in the central portion of the chamber 10 by using the internal coil 200.

[0097] Specifically, when the plasma density is increased from the inside of the chamber 10 to the outside of the chamber 10 through the external coil 100, the internal coil 200 can be used to prevent the plasma density from decreasing in the center of the chamber 10. As a result, uniformity can be improved at the center and edge of the wafer 30.

[0098] 6 and 7, the plurality of internal unit coils 210 according to an embodiment of the present invention may also include a first internal unit coil 231 extending counterclockwise from the internal unit extension one end 211 to the internal unit extension end 212, and a second internal unit coil 232 extending clockwise from the unit extension one end 211 to the unit extension end 212.

[0099] The first internal unit coil 231 and the second internal unit coil 232 are wound in opposite directions, and the first internal unit coil 231 and the second internal unit coil 232 extend in opposite directions, so that current flows in opposite directions. Here, the winding direction of the first internal unit coil 231 and the second internal unit coil 232 is also the direction in which current flows.

[0100] Specifically, the first internal unit coil 231 may be formed so that a current flows counterclockwise, and the second internal unit coil 232 may be formed so that a current flows clockwise.

[0101] 7, the first internal unit coil 231 and the second internal unit coil 232 may be alternately extended. Specifically, the first internal unit coil 231 and the second unit coil 232 may be alternately extended once each, so that currents may flow in different directions in the adjacent internal unit coils 210.

[0102] Referring to FIG. 8, the plurality of first internal unit coils 231 may be extended first, and then the second internal unit coil 232 may be extended, or the plurality of second internal unit coils 232 may be extended first, and then the first internal unit coil 231 may be extended.

[0103] More specifically, the first internal unit coil 231 and the second internal unit coil 232 are not alternately extended one after the other, and a plurality of the first internal unit coils 231 and a plurality of the second internal unit coils 232 may be stacked in any order.

[0104] According to an embodiment of the present invention, the plasma density can be finely adjusted by using a plurality of internal unit coils (the first internal unit coil 231 and the second internal unit coil 232) that are wound in different directions.

[0105] The plasma source using the planar helical coil according to the above-described embodiment of the present invention has the following advantages.

[0106] A plasma source using a planar helical coil according to an embodiment of the present invention includes stacking a plurality of unit coils each having a diameter larger than the diameter or width of a wafer, and connecting the unit coils via connecting portions extending in a direction perpendicular to the plane formed by the unit coils.

[0107] A plasma source using a planar helical coil according to an embodiment of the present invention has the advantage of being able to improve plasma density at the edge of the wafer by forming plasma inside the chamber by stacking multiple unit coils that have a diameter larger than the diameter or width of the wafer and extend within a single plane.

[0108] In addition, the plasma source using the planar helical coil according to the embodiment of the present invention has the advantage that the plasma density inside the chamber can be finely adjusted by arranging the first and second unit coils in which the current flows in the same direction or in different directions in multiple unit coils.

[0109] In addition, the plasma source using a planar helical coil according to an embodiment of the present invention has a plurality of inner unit coils, each having a diameter smaller than the diameter or width of the wafer, arranged on the same plane, and connected to each other via a connector to form plasma inside the chamber, thereby providing the advantage of being able to finely adjust the plasma density at the center of the wafer.

[0110] A plasma source using a planar helical coil according to an embodiment of the present invention can be used for inductively coupled plasma (ICP), but is not limited to excitation and can be used for various types of plasma.

[0111] As described above, the present invention has been described with reference to the embodiments shown in the drawings, but these are merely illustrative, and those skilled in the art will understand that various modifications and variations of the embodiments are possible therefrom. Therefore, the true technical scope of protection of the present invention is defined by the technical ideas of the appended claims.

Claims

1. a plasma source provided at an upper portion of the chamber for generating plasma, The unit coil extends from one end of the unit extension and extends circularly to an end of the unit extension within one plane, A plurality of the unit coils are stacked, a separation distance is provided between the unit extension one end and the unit extension end of the unit coil; the plurality of unit coils include a first unit coil extending counterclockwise from the unit extension one end to the unit extension end, and a second unit coil extending clockwise from the unit extension one end to the unit extension end, a plurality of connecting portions connecting the unit extension terminal end portion of one of the unit coils to the unit extension one end portion of another of the unit coils; the plurality of connecting portions include a connecting portion connecting the unit extension terminal end portion of the first unit coil and the unit extension one end portion of the second unit coil, The length of the connecting portion is 5 to 15 mm; further comprising an internal coil having a diameter smaller than the diameter or width of a wafer placed on the base plate inside the chamber; The internal coil includes a plurality of internal unit coils each having a circular shape, The plurality of internal unit coils are provided on the same plane. A plasma source utilizing a planar helical coil.

2. the connecting portion extends perpendicular to a plane formed by the unit coils, The planes formed by the plurality of unit coils extend in a direction parallel to each other.

10. A plasma source utilizing a planar helical coil as claimed in claim 1.

3. The diameter of the unit coil is larger than the diameter or width of a wafer placed on a base plate inside the chamber, The plane formed by the plurality of unit coils is aligned with the plane on which the wafer is placed.

10. A plasma source utilizing a planar helical coil as claimed in claim 1.

4. The first unit coil and the second unit coil are alternately stacked.

10. A plasma source utilizing a planar helical coil as claimed in claim 1.

5. After a plurality of the first unit coils are stacked, the second unit coils are stacked, or after a plurality of the second unit coils are stacked, the first unit coils are stacked.

10. A plasma source utilizing a planar helical coil as claimed in claim 1.

6. The inner unit coils each further include an inner connection part extending from one inner unit extension end to an inner unit extension end part while forming a circular shape, and connecting the inner unit extension end part of one inner unit coil to the inner unit extension one end part of another inner unit coil.

10. A plasma source utilizing a planar helical coil as claimed in claim 1.

7. The plurality of internal connection portions connecting the internal unit coils extend in a direction parallel to each other.

7. A plasma source utilizing a planar helical coil as claimed in claim 6.

8. An inner gap is provided between the inner unit extension one end and the inner unit extension end of the inner unit coil.

7. A plasma source utilizing a planar helical coil as claimed in claim 6.

9. The plurality of inner unit coils include a first inner unit coil extending counterclockwise from one end of the inner unit extension to the end of the inner unit extension, and a second inner unit coil extending clockwise from one end of the inner unit extension to the end of the inner unit extension.

7. A plasma source utilizing a planar helical coil as claimed in claim 6.

10. the plurality of internal connection parts connect the first internal unit coil and the second internal unit coil and include a plurality of internal connection parts extending in a direction parallel to each other; 10. A plasma source utilizing the planar helical coil of claim 9.

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