Plasma processing apparatus, power supply system, and frequency control method

By optimizing the source frequency at multiple time points within a waveform period, the apparatus addresses the challenge of RF power reflection, improving plasma generation efficiency and stability.

JP7727860B2Active Publication Date: 2025-08-21TOKYO ELECTRON LTD
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Patent Information

Application Number
JP2024561394
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2022-11-30
Filing Date
2023-11-20
Publication Date
2025-08-21
Estimated Expiration
2043-11-20

AI Technical Summary

Technical Problem

Existing plasma processing apparatuses face challenges in reducing the degree of reflection of source RF power, which affects the efficiency and stability of plasma generation.

Method used

The apparatus includes a radio frequency power source that identifies and adjusts the source frequency at multiple time points within a waveform period to optimize the suppression of reflection, using a series of optimization processes to fine-tune the frequency pattern for reduced reflection.

Benefits of technology

This approach effectively reduces the degree of reflection of source RF power, enhancing the efficiency and stability of plasma generation in the plasma processing apparatus.

✦ Generated by Eureka AI based on patent content.

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Abstract

In a disclosed plasma processing device, a high-frequency power supply changes the source frequency of source high-frequency power at a plurality of first time points within a waveform period of an electric bias, and, while interpolating the source frequency in each of a plurality of first divided periods within the waveform period that are divided at the plurality of first time points, identifies a first temporal-change pattern of the source frequency that most suppresses the level of reflection of the source high-frequency power. The high-frequency power supply changes the source frequency at a plurality of second time points within the waveform period from the first time pattern or a derivative pattern thereof, and, while interpolating the source frequency in each of a plurality of second divided periods within the waveform period at the plurality of second time points, identifies a second temporal-change pattern of the source frequency in the waveform period that most suppresses the level of reflection of the source high-frequency power.
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Citation Information

Patent Citations

  • Plasma processing apparatus, plasma processing method, and computer readable storage medium

    JP2009246091A

  • Plasma rf bias erasure system

    JP2018536295A

  • Smart high frequency pulse conditioning using a variable frequency generator.

    JP2020515001A

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    JP2021106354A