Peeling device

Abstract

To provide a peeling device which can prevent device contamination caused by peeling debris produced when peeling a wafer from an ingot.SOLUTION: A peeling device 100 has: an ingot holding unit 110 which has a holding surface 111 for holding an ingot 10; a wafer holding unit 120 which is capable of coming closer to and going away from the ingot holding unit 110, and which has a holding surface 121 for sucking and holding a wafer 30 to be produced; a washing brush 130 which washes peeling surfaces 23 and 31, where the wafer 30 to be produced has been peeled from the ingot 10, so that peeling debris may be removed; and a moving unit 140 which brings the washing brush 130 into contact with at least one of the peeling surface 23 of the ingot 10 held by the ingot holding unit 110 or the peeling surface 31 of the wafer 30 held by the wafer holding unit 120, and moves them relative to each other.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present invention relates to a stripping device. [Background technology]

[0002] Conventionally, a method for manufacturing semiconductor wafers has been known in which wafers are cut out from a cylindrical ingot using a wire saw, but cutting with a wire saw has the problem that most of the ingot is lost as kerf loss, making it uneconomical (see Patent Document 1).To solve this problem, a method has been proposed in which the focal point of a laser beam that is transparent to the ingot is positioned inside the ingot, and a peeling layer is formed on the surface to be cut, thereby peeling off the wafer (see Patent Document 2). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2000-094221 [Patent Document 2] Japanese Patent Application Laid-Open No. 2016-111143 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the method of peeling the wafer from the ingot using the peeling layer as the interface, peeling debris is generated from the peeling surface, and there is a possibility that the peeling debris will fall during wafer transportation and contaminate the processing equipment.

[0005] The present invention has been made in view of the above problems, and an object of the present invention is to provide a delamination apparatus that can suppress contamination of the apparatus by delamination debris generated when delaminating wafers from an ingot. [Means for solving the problem]

[0006] In order to solve the above-mentioned problems and achieve the object, the delamination apparatus of the present invention is a delamination apparatus that delaminates a wafer to be produced from an ingot on which a delamination layer has been formed by irradiating the ingot with a laser beam, the laser beam having a wavelength that is transparent to the ingot, and positioning the focal point of the laser beam at a depth from an end face of the ingot that corresponds to the thickness of the wafer to be produced, and includes an ingot holding unit having a holding surface for holding the ingot, a wafer holding unit that is capable of approaching and moving away from the ingot holding unit and has a holding surface for suction-holding the wafer to be produced, and a delamination unit that cleans the delamination surface from which the wafer to be produced has been delaminated from the ingot. , which occurs from the peeled surface when peeling the wafer from the ingot. The apparatus is characterized by having a cleaning brush for removing the peeled debris, and a moving unit for bringing the cleaning brush into contact with and moving it relatively to at least one of the peeled surface of the ingot held by the ingot holding unit and the peeled surface of the wafer held by the wafer holding unit. The delamination device of the present invention is a delamination device that delaminates a wafer to be produced from an ingot on which a delamination layer has been formed by irradiating the ingot with a laser beam having a wavelength that is transparent to the ingot, with the focal point positioned at a depth from the end face of the ingot equivalent to the thickness of the wafer to be produced, and is characterized by comprising: an ingot holding unit having a holding surface that holds the ingot; a wafer holding unit that is capable of approaching and moving away from the ingot holding unit and has a holding surface that suction-holds the wafer to be produced; a cleaning brush that cleans at least one of the delamination surface of the ingot, from which the wafer to be produced has been delaminate'd while still held in the ingot holding unit, and the delamination surface of the wafer while still held in the wafer holding unit, to remove delamination debris; and a moving unit that brings the cleaning brush into contact with and moves relatively to at least one of the delamination surface of the ingot while still held in the ingot holding unit and the delamination surface of the wafer while still held in the wafer holding unit.

[0007] In addition, in the peeling device of the present invention, the cleaning brush is rotatable around an axis perpendicular to the holding surface of the wafer holding unit and the holding surface of the ingot holding unit, and by abutting the cleaning brush while rotated around the axis, at least one of the peeling surface of the wafer held in the wafer holding unit and the peeling surface of the ingot held in the ingot holding unit can be cleaned.

[0008] In addition, the peeling device of the present invention may include a cleaning brush that faces the holding surface of the wafer holding unit and cleans the peeled surface of the wafer peeled from the ingot, and a second cleaning brush that faces the holding surface of the ingot holding unit and cleans the peeled surface of the ingot from which the wafer has been peeled, and may be capable of simultaneously cleaning the peeled surface of the wafer with the first cleaning brush and cleaning the peeled surface of the ingot with the second cleaning brush.

[0009] In addition, in the peeling device of the present invention, the ingot holding unit is rotatable around an axis perpendicular to the holding surface of the ingot holding unit, and the wafer holding unit is rotatable around an axis perpendicular to the holding surface of the wafer holding unit, and the peeling surface may be cleaned by rotating at least one of the ingot holding unit and the wafer holding unit around the axis and bringing them into contact with the cleaning brush.

[0010] In addition, in the peeling device of the present invention, the cleaning brush may be movable between an operating position facing at least one of the peeling surface of the ingot held in the ingot holding unit and the peeling surface of the wafer held in the wafer holding unit, and a non-operating position facing neither the peeling surface of the ingot held in the ingot holding unit nor the peeling surface of the wafer held in the wafer holding unit.

[0011] The peeling device of the present invention may further include an ultrasonic wave applying unit that applies ultrasonic waves to the ingot. [Effects of the Invention]

[0012] The present invention can suppress contamination of the apparatus by peeled debris generated when peeling wafers from an ingot. [Brief explanation of the drawings]

[0013] [Figure 1] FIG. 1 is a perspective view of an ingot to be processed by a delamination apparatus according to an embodiment. [Figure 2] FIG. 2 is a side view of the ingot shown in FIG. [Figure 3] FIG. 3 is a perspective view showing one state of forming a peeled layer of the ingot shown in FIG. [Figure 4] FIG. 4 is a side view of FIG. [Figure 5] FIG. 5 is a perspective view showing the configuration of the main part of the peeling device according to the embodiment. [Figure 6]FIG. 6 is an explanatory diagram illustrating a schematic configuration of the ultrasonic wave applying unit of the peeling device shown in FIG. [Figure 7] FIG. 7 is a side view showing a state before the wafer is delaminated in the delamination apparatus shown in FIG. [Figure 8] FIG. 8 is a side view showing one state in which the peeling surface is cleaned in the peeling device shown in FIG. [Figure 9] FIG. 9 is a perspective view showing the configuration of a main part of a peeling device according to a modified example. DETAILED DESCRIPTION OF THE INVENTION

[0014] Modes (embodiments) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited to the contents described in the following embodiments. Furthermore, the components described below include those that can be easily imagined by a person skilled in the art and those that are substantially the same. Furthermore, the configurations described below can be combined as appropriate. Furthermore, various omissions, substitutions, or modifications of the configuration can be made within the scope of the gist of the present invention.

[0015] [Embodiment] (ingot) First, the configuration of an ingot 10 to be processed by a delamination apparatus 100 according to an embodiment of the present invention will be described. Fig. 1 is a perspective view of the ingot 10 to be processed by the delamination apparatus 100 according to the embodiment. Fig. 2 is a side view of the ingot 10 shown in Fig. 1.

[0016] 1 and 2, an ingot 10 is made of silicon carbide (SiC) and is cylindrical in shape. In this embodiment, the ingot 10 is a hexagonal single crystal SiC ingot. The ingot 10 has a first surface 11, a second surface 12, a peripheral surface 13, a first orientation flat 14, and a second orientation flat 15.

[0017] The first surface 11 is circular and corresponds to one end surface of the cylindrical ingot 10. The first surface 11 corresponds to the top surface of the ingot 10. The second surface 12 is circular and corresponds to the end surface of the cylindrical ingot 10 opposite the first surface 11. The second surface 12 corresponds to the bottom surface of the ingot 10. The peripheral surface 13 is a surface that is continuous with the outer edge of the first surface 11 and the outer edge of the second surface 12.

[0018] The first orientation flat 14 is a flat formed on a part of the peripheral surface 13 to indicate the crystal orientation of the ingot 10. The second orientation flat 15 is a flat formed on a part of the peripheral surface 13 to indicate the crystal orientation of the ingot 10. The second orientation flat 15 is perpendicular to the first orientation flat 14. The length of the first orientation flat 14 is longer than the length of the second orientation flat 15.

[0019] The ingot 10 also has a c-axis 18 that is inclined at an off angle 20 in a tilt direction 17 toward the second orientation flat 15 relative to a normal 16 to the first surface 11, and a c-plane 19 that is perpendicular to the c-axis 18. The tilt direction 17 of the c-axis 18 from the normal 16 is perpendicular to the extension direction of the second orientation flat 15 and is parallel to the first orientation flat 14. The c-plane 19 is inclined at the off angle 20 relative to the first surface 11 of the ingot 10.

[0020] Countless c-planes 19 are set in the ingot 10 at the molecular level of the ingot 10. In the embodiment, the ingot 10 has an off-angle 20 set to 1°, 4°, or 6°, but in the present invention, the ingot 10 may be manufactured with the off-angle set freely within the range of 1° to 6°, for example. After the first surface 11 of the ingot 10 is ground by a grinding device, the ingot 10 is polished by a polishing device to form the first surface 11 into a mirror finish.

[0021] (Formation of peeling layer) Next, a method for forming a delamination layer 22, which will serve as a delamination interface, inside the ingot 10 before the wafer 30 is delaminated from the ingot 10 by the delamination apparatus 100 of the embodiment will be described. FIG. 3 is a perspective view showing one state in which the delamination layer 22 of the ingot 10 shown in FIG. 1 is formed. FIG. 4 is a side view of FIG. 3. In the following description, the X-axis direction is one direction in a horizontal plane. The Y-axis direction is a direction perpendicular to the X-axis direction in a horizontal plane. The Z-axis direction is a direction perpendicular to the X-axis direction and the Y-axis direction. In the embodiment, the processing feed direction is the X-axis direction, and the indexing feed direction is the Y-axis direction.

[0022] In the embodiment, the peeling layer 22 is formed by a laser processing apparatus 200. The laser processing apparatus 200 includes a holding unit 210 having a holding surface 211, a laser beam irradiation unit 220, and a moving unit (not shown) that moves the holding surface 211 and a condenser 221 of the laser beam irradiation unit 220 relative to each other.

[0023] To form the peeling layer 22, first, the second surface 12 side of the ingot 10 is suction-held on the holding surface 211 of the holding unit 210. At this time, the direction of the ingot 10 is positioned so that the tilt direction 17 is parallel to the Y-axis direction, which is the indexing feed direction. Next, the laser beam irradiation unit 220 and the ingot 10 are aligned.

[0024] Specifically, a moving unit (not shown) moves the holding unit 210 to a predetermined processing position, and adjusts the height position of the condenser 221 of the laser beam irradiation unit 220 to position the focal point 223 of the laser beam 222 at a depth corresponding to the thickness of the wafer 30 (see FIG. 4) to be produced from the end face (first face 11) of the ingot 10. The laser beam 222 has a wavelength that is transparent to the ingot 10.

[0025] In forming the peeling layer 22, a pulsed laser beam 222 is irradiated onto the ingot 10 while the focal point 223 and the ingot 10 are moved relatively in the X and Y directions, thereby separating the SiC into Si (silicon) and C (carbon). The next pulsed laser beam 222 is absorbed by the previously formed C, and modified regions 21, in which the SiC is separated into Si and C in a chain reaction, are formed inside the ingot 10 along the processing feed direction, and cracks are generated from the modified regions 21 along the c-plane 19 (see FIG. 2). In this way, the peeling layer 22 is formed, including the modified regions 21 and cracks formed from the modified regions 21 along the c-plane 19.

[0026] (peeling device) Next, the configuration of a delamination apparatus 100 according to an embodiment of the present invention will be described. FIG. 5 is a perspective view showing the configuration of the main parts of the delamination apparatus 100 according to the embodiment. FIG. 6 is an explanatory diagram showing the schematic configuration of the ultrasonic wave application unit 150 of the delamination apparatus 100 shown in FIG. 5. FIG. 7 is a side view showing a state before the wafer 30 is delaminate in the delamination apparatus 100 shown in FIG. 5. FIG. 8 is a side view showing a state in which the delamination surfaces 23, 31 are cleaned in the delamination apparatus 100 shown in FIG. 5. The delamination apparatus 100 according to the embodiment includes an ingot holding unit 110, a wafer holding unit 120, a cleaning brush 130, a moving unit 140, an ultrasonic wave application unit 150, and a liquid supply unit 160.

[0027] The ingot holding unit 110 holds the ingot 10 on a holding surface 111. The holding surface 111 has a disk shape and is made of porous ceramic or the like. In this embodiment, the holding surface 111 is a flat surface parallel to the horizontal direction. The holding surface 111 is connected to a vacuum suction source, for example, via a vacuum suction path. The ingot holding unit 110 suction-holds the second surface 12 of the ingot 10 placed on the holding surface 111.

[0028] The ingot holding unit 110 may be provided so as to be movable in a direction perpendicular to the holding surface 111 (in the embodiment, the vertical direction) by an ingot moving unit 141 of the moving unit 140, which will be described later. In the embodiment, the ingot holding unit 110 can be rotated around an axis perpendicular to the holding surface 111 by an ingot rotating unit 142 of the moving unit 140, which will be described later. In this specification, "perpendicular" also includes cases where the two are not perfectly perpendicular due to dimensional errors, design errors, etc.

[0029] The wafer holding unit 120 suction-holds the wafer 30 to be produced on a holding surface 121. The holding surface 121 has a disk shape and is made of porous ceramic or the like. In this embodiment, the holding surface 121 is a flat surface that is parallel to the horizontal direction and faces the holding surface 111 of the ingot holding unit 110. The holding surface 121 is connected to a vacuum suction source, for example, via a vacuum suction path. The wafer holding unit 120 suction-holds the first surface 11 side of the ingot 10 that is in contact with the holding surface 121.

[0030] The wafer holding unit 120 can move toward and away from the ingot holding unit 110. In an embodiment, the wafer holding unit 120 can be moved in a direction perpendicular to the holding surface 121 (in the embodiment, the vertical direction) by a wafer moving unit 143 of the moving unit 140, which will be described later. In an embodiment, the wafer holding unit 120 can be rotated around an axis perpendicular to the holding surface 121 by a wafer rotating unit 144 of the moving unit 140, which will be described later.

[0031] The cleaning brush 130 cleans the separation surfaces 23, 31 from which the wafers 30 to be produced from the ingot 10 have been separated, thereby removing any debris. The cleaning brush 130 includes a disk-shaped base and hair-like portions extending vertically from the base. As shown in Fig. 5, the hair-like portions are arranged radially from the center of the disk-shaped base toward the outer periphery in a plan view.

[0032] In this embodiment, the cleaning brush 130 includes a first cleaning brush 131 and a second cleaning brush 132. The first cleaning brush 131 faces the holding surface 121 of the wafer holding unit 120 and cleans the peeled surface 31 of the wafer 30 peeled from the ingot 10. The second cleaning brush 132 faces the holding surface 111 of the ingot holding unit 110 and cleans the peeled surface 23 of the ingot 10 from which the wafer 30 has been peeled.

[0033] The first cleaning brush 131 of the cleaning brush 130 comes into contact with the peeled surface 31 of the wafer 30 peeled from the ingot 10 while the wafer holding unit 120 is rotating about its axis, thereby cleaning the peeled surface 31. The second cleaning brush 132 of the cleaning brush 130 comes into contact with the peeled surface 23 of the ingot 10 peeled from the wafer 30 while the ingot holding unit 110 is rotating about its axis, thereby cleaning the peeled surface 23.

[0034] The cleaning brush 130 is movable between an active position shown in Fig. 7 and a non-active position shown in Fig. 8. The active position is a position facing at least one of the peeled surface 23 of the ingot 10 held in the ingot holding unit 110 and the peeled surface 31 of the wafer 30 held in the wafer holding unit 120. The non-active position is a position facing neither the peeled surface 23 of the ingot 10 held in the ingot holding unit 110 nor the peeled surface 31 of the wafer 30 held in the wafer holding unit 120.

[0035] The cleaning brush 130 can simultaneously clean the peeled surface 31 of the wafer 30 with the first cleaning brush 131 and clean the peeled surface 23 of the ingot 10 with the second cleaning brush 132. More specifically, when the cleaning brush 130 is in the operating position, with the ingot holding unit 110 and the wafer holding unit 120 rotating about their axes, the first cleaning brush 131 comes into contact with the peeled surface 31 of the wafer 30 and the second cleaning brush 132 comes into contact with the peeled surface 23 of the ingot 10, thereby enabling simultaneous cleaning of the peeled surface 31 of the wafer 30 and the peeled surface 23 of the ingot 10.

[0036] In this embodiment, the cleaning brush 130 can be moved in directions parallel to and perpendicular to the holding surface 121 of the wafer holding unit 120 and the holding surface 111 of the ingot holding unit 110 by a brush moving unit 145 of the moving unit 140, which will be described later. In this embodiment, the cleaning brush 130 can be rotated about an axis perpendicular to the holding surface 121 of the wafer holding unit 120 and the holding surface 111 of the ingot holding unit 110 by a brush rotating unit 146 of the moving unit 140, which will be described later. The cleaning brush 130, while rotating about its axis, comes into contact with the peeled surface 31 of the wafer 30 held by the wafer holding unit 120, thereby cleaning the peeled surface 31. The cleaning brush 130, while rotating about its axis, comes into contact with the peeled surface 23 of the ingot 10 held by the ingot holding unit 110, thereby cleaning the peeled surface 23. The delamination apparatus 100 of the embodiment can rotate the cleaning brush 130 and at least one of the ingot holding unit 110 and the wafer holding unit 120 around their respective axes.

[0037] The moving unit 140 brings the cleaning brush 130 into contact with at least one of the peeled surface 23 of the ingot 10 held by the ingot holding unit 110 and the peeled surface 31 of the wafer 30 held by the wafer holding unit 120, and moves them relatively. In this embodiment, the moving unit 140 includes an ingot moving unit 141, an ingot rotating unit 142, a wafer moving unit 143, a wafer rotating unit 144, a brush moving unit 145, and a brush rotating unit 146.

[0038] The ingot moving unit 141 moves the holding surface 111 of the ingot holding unit 110 in a direction perpendicular to the holding surface 111 (in the embodiment, the vertical direction). The ingot 10 held on the holding surface 111 of the ingot holding unit 110 can be moved closer to and farther away from the wafer 30 held in the wafer holding unit 120 in the vertical direction by the ingot moving unit 141. The ingot moving unit 141 may also move the holding surface 111 of the ingot holding unit 110 in a direction parallel to the holding surface 111.

[0039] The ingot rotation unit 142 rotates the holding surface 111 of the ingot holding unit 110 around an axis perpendicular to the holding surface 111. The ingot 10 held on the holding surface 111 of the ingot holding unit 110 can be rotated by the ingot rotation unit 142 around the axis of the ingot holding unit 110 relative to the cleaning brush 130.

[0040] The wafer moving unit 143 moves the holding surface 121 of the wafer holding unit 120 in a direction perpendicular to the holding surface 121 (in the embodiment, the vertical direction). The wafer 30 held on the holding surface 121 of the wafer holding unit 120 can be moved toward and away from the ingot 10 held in the ingot holding unit 110 in the vertical direction by the wafer moving unit 143. The wafer moving unit 143 may also move the holding surface 121 of the wafer holding unit 120 in a direction parallel to the holding surface 121. Note that either the ingot moving unit 141 or the ingot moving unit 141 does not necessarily have to be provided.

[0041] The wafer rotation unit 144 rotates the holding surface 121 of the wafer holding unit 120 around an axis perpendicular to the holding surface 121. The wafer 30 held on the holding surface 121 of the wafer holding unit 120 can be rotated by the wafer rotation unit 144 around the axis of the wafer holding unit 120 relative to the cleaning brush 130.

[0042] The brush moving unit 145 moves the cleaning brush 130 in directions parallel and perpendicular to the holding surface 111 of the ingot holding unit 110 and the holding surface 121 of the wafer holding unit 120. The cleaning brush 130 can be moved by the brush moving unit 145 between an active position shown in FIG. 7 and a non-active position shown in FIG. 8. The first cleaning brush 131 of the cleaning brush 130 can be moved by the brush moving unit 145 so as to abut against the peeled surface 31 of the wafer 30 held on the holding surface 121 of the wafer holding unit 120. The second cleaning brush 132 of the cleaning brush 130 can be moved by the brush moving unit 145 so as to abut against the peeled surface 23 of the ingot 10 held on the holding surface 111 of the ingot holding unit 110.

[0043] The brush rotation unit 146 rotates the cleaning brush 130 around an axis perpendicular to the holding surface 121 of the wafer holding unit 120 and the holding surface 111 of the ingot holding unit 110. The cleaning brush 130 can be rotated by the brush rotation unit 146 around an axis perpendicular to the peeled surface 31 of the wafer 30 held on the holding surface 121 of the wafer holding unit 120 and the peeled surface 23 of the ingot 10 held on the holding surface 111 of the ingot holding unit 110.

[0044] 6 is a unit that applies ultrasonic waves to the ingot 10 to peel off a part of the ingot 10 on the first surface 11 side using a peeling layer 22 formed inside the ingot 10 as an interface, and generates the peeled part as a wafer 30. The ultrasonic wave applying unit 150 of the embodiment applies ultrasonic waves to the ingot 10 held on the holding surface 111 of the ingot holding unit 110. The ultrasonic wave applying unit 150 includes, for example, an ultrasonic power supply and an ultrasonic vibrator made of piezoelectric ceramics or the like to which a voltage is applied by the ultrasonic power supply.

[0045] The liquid supply unit 160 is a unit that supplies liquid 161 between the ultrasonic vibrator and the ingot 10 when the ultrasonic application unit 150 applies ultrasonic waves to the ingot 10 held on the holding surface 111 of the ingot holding unit 110.

[0046] When the ingot 10 is peeled at the peeling layer 22 by the ultrasonic wave applying unit 150, first, the second surface 12 side of the ingot 10 is sucked and held on the holding surface 111 of the ingot holding unit 110. Next, the ultrasonic vibrator of the ultrasonic wave applying unit 150 is made to face the first surface 11 of the ingot 10. Next, liquid 161 is supplied from the liquid supply unit 160 between the ultrasonic vibrator and the ingot 10.

[0047] In this state, a voltage is applied from the ultrasonic power supply of the ultrasonic application unit 150 to ultrasonically vibrate the ultrasonic vibrator, so that ultrasonic vibrations of a frequency corresponding to the vibration of the ultrasonic vibrator are propagated into the liquid 161 and applied to the ingot 10. By applying ultrasonic vibrations to the entire surface of the ingot 10, a part of the first surface 11 side of the ingot 10 is peeled off, with the peeling layer 22 formed by irradiation with the laser beam 222 as the interface.

[0048] 7 and 8 , in the delamination apparatus 100, the ingot holding unit 110 holds the second side 12 of the ingot 10, and the wafer holding unit 120 holds the first side 11 of the ingot 10 by suction, and the wafer holding unit 120 moves away from the ingot holding unit 110, thereby delaminating and separating the wafer 30 from the ingot 10 with the delamination layer 22 as the interface. That is, the delamination apparatus 100 delaminates the portion between the first side 11 of the ingot 10 and the delamination layer 22 from the portion between the second side 12 of the ingot 10 and the delamination layer 22, treating the portion between the first side 11 of the ingot 10 and the delamination layer 22 as the wafer 30.

[0049] 8, after the delamination apparatus 100 delaminates the wafer 30 from the ingot 10, the delamination surface 23 of the ingot 10 held by the ingot holding unit 110 and the delamination surface 31 of the wafer 30 sucked into the wafer holding unit 120 are cleaned by a cleaning brush 130 to remove delamination debris. The cleaning brush 130 of the embodiment can simultaneously clean the delamination surface 23 of the ingot 10 and the delamination surface 31 of the wafer 30.

[0050] As described above, the delamination apparatus 100 according to the embodiment cleans the delamination surfaces 23, 31 by bringing the cleaning brush 130 into contact with either the delamination surface 23 of the ingot 10 or the delamination surface 31 of the wafer 30. These cleaning operations are performed after the wafer 30 is delaminate from the ingot 10 and before the resulting wafer 30 is transported.

[0051] That is, the ingot 10 from which the wafer 30 has been separated is cleaned at its separated surface 23 while being held by the ingot holding unit 110 that holds the wafer 30 when separating the wafer 30. The wafer 30 separated from the ingot 10 is held by the wafer holding unit 120 that holds the wafer by suction when separated from the ingot 10, and is cleaned at its separated surface 31 while being positioned above the ingot 10.

[0052] This allows the separation debris generated from the separation surfaces 23, 31 when the wafer 30 is separated from the ingot 10 to be removed before the wafer 30 is transported from the separation apparatus 100, thereby suppressing contamination of the apparatus by the separation debris.

[0053] The present invention is not limited to the above-described embodiment, and can be implemented in various modifications without departing from the gist of the present invention.

[0054] For example, in the present invention, the configuration of the laser processing device 200 may be included in the peeling device 100, and the ingot holding unit 110 may be the same as the holding unit 210 of the laser processing device 200.

[0055] In addition, in the embodiment, the ingot holding unit 110 and the wafer holding unit 120 are also rotatable about their axes, but in the present invention, only the cleaning brush 130 may be rotated.

[0056] In addition, in this embodiment, the cleaning brush 130 has a first cleaning brush 131 and a second cleaning brush 132, and the brushes on both sides can simultaneously clean the peeled surface 23 of the ingot 10 and the peeled surface 31 of the wafer 30, but in the present invention, the brushes can be provided on only one side, and the brushes can be flipped over to clean each side at a time.

[0057] Furthermore, the cleaning brush 130 of the embodiment is circular in plan view as shown in FIG. 5 and cleans the peeling surfaces 23, 31 by rotating around its axis, but in the present invention, it does not have to be circular, as shown in the following modified example.

[0058] [Modification] 9 is a perspective view showing the configuration of the main parts of a delamination device 100-1 according to a modified example. The delamination device 100-1 according to the modified example differs from the delamination device 100 according to the embodiment in that it includes a cleaning brush 130-1 and a moving unit 140 instead of the cleaning brush 130 and the moving unit 140.

[0059] The cleaning brush 130-1 includes a rod-shaped base portion extending in one direction parallel to the holding surface 111 of the ingot holding unit 110, and hair-like portions extending vertically from the base portion. As shown in Fig. 9, the hair-like portions are arranged in a row along the longitudinal direction of the rod-shaped base portion.

[0060] The moving unit 140-1 of the modified example differs from the moving unit 140 of the embodiment in that it includes a brush moving unit 145-1 instead of the brush moving unit 145 and the brush rotating unit 146.

[0061] The brush moving unit 145-1 moves the cleaning brush 130-1 in a direction parallel to the holding surface 111 of the ingot holding unit 110 and the holding surface 121 of the wafer holding unit 120 and perpendicular to the longitudinal direction of the rod-shaped base of the cleaning brush 130-1. The brush moving unit 145-1 also moves the cleaning brush 130-1 in a direction perpendicular to the holding surface 111 of the ingot holding unit 110 and the holding surface 121 of the wafer holding unit 120.

[0062] The cleaning brush 130-1, while in contact with the delaminated surface 23 of the ingot 10 from which the wafer 30 has been delaminated, moves back and forth in a direction parallel to the holding surface 111 of the ingot holding unit 110 and perpendicular to the longitudinal direction of the rod-shaped base of the cleaning brush 130-1 to clean the delaminated surface 23. At this time, the ingot holding unit 110 may rotate about its axis. This allows the entire delaminated surface 23 to be cleaned evenly.

[0063] The cleaning brush 130-1, while in contact with the peeled surface 31 of the wafer 30 peeled from the ingot 10, moves back and forth in a direction parallel to the holding surface 121 of the wafer holding unit 120 and perpendicular to the longitudinal direction of the rod-shaped base of the cleaning brush 130-1 to clean the peeled surface 23. At this time, the wafer holding unit 120 may rotate about its axis. This allows the entire peeled surface 31 to be evenly cleaned.

[0064] The cleaning brush 130-1 may simultaneously clean the peeled surface 23 of the ingot 10 and the peeled surface 31 of the wafer 30. More specifically, by bringing the wafer holding unit 120 close to the ingot holding unit 110 so that the cleaning brush 130-1 comes into contact with both the peeled surface 23 of the ingot 10 and the peeled surface 31 of the wafer 30, the peeled surface 31 of the wafer 30 and the peeled surface 23 of the ingot 10 can be cleaned simultaneously.

[0065] In this way, the delamination device 100-1 delaminates the wafer 30 from the ingot 10 as in the embodiment, and then cleans the delamination surface 23 of the ingot 10 held by the ingot holding unit 110 and the delamination surface 31 of the wafer 30 sucked into the wafer holding unit 120 with the cleaning brush 130-1 to remove the delamination debris. [Explanation of symbols]

[0066] 10 ingots 11 First surface (end surface) 12 The Second Side 22 Peeling layer 23 Peeling surface 30 wafers 31 Peeling surface 100, 100-1 Peeling device 110 Ingot Holding Unit 111 Holding surface 120 wafer holding unit 121 Holding surface 130, 130-1 Cleaning brush 131 First Cleaning Brush 132 Second Cleaning Brush 140, 140-1 Mobile Unit 150 Ultrasonic wave application unit 222 Laser Beam 223 Focus point

Claims

1. A delamination apparatus for delaminating a wafer to be produced from an ingot on which a delamination layer has been formed by irradiating the ingot with a laser beam, the laser beam having a wavelength that is transparent to the ingot, with the focal point positioned at a depth corresponding to the thickness of the wafer to be produced from the end face of the ingot, the delamination apparatus comprising: an ingot holding unit having a holding surface for holding an ingot; a wafer holding unit that is capable of approaching and moving away from the ingot holding unit and has a holding surface that suction-holds a wafer to be produced; a cleaning brush for cleaning the separation surface from which the wafer to be produced from the ingot has been separated, thereby removing debris generated from the separation surface when the wafer is separated from the ingot; a moving unit that brings the cleaning brush into contact with and moves relatively at least one of the peeled surface of the ingot held by the ingot holding unit and the peeled surface of the wafer held by the wafer holding unit; characterized in that it has Peeling device.

2. A delamination apparatus for delaminating a wafer to be produced from an ingot on which a delamination layer has been formed by irradiating the ingot with a laser beam, the laser beam having a wavelength that is transparent to the ingot, with the focal point positioned at a depth corresponding to the thickness of the wafer to be produced from the end face of the ingot, the delamination apparatus comprising: an ingot holding unit having a holding surface for holding an ingot; a wafer holding unit that is capable of approaching and moving away from the ingot holding unit and has a holding surface that suction-holds a wafer to be produced; a cleaning brush for cleaning at least one of a peeled surface of the ingot, which is a wafer to be produced from the ingot and is still held in the ingot holding unit, and a peeled surface of the wafer, which is still held in the wafer holding unit, to remove peeled debris; a moving unit that brings the cleaning brush into contact with and moves relatively at least one of the peeled surface of the ingot held by the ingot holding unit and the peeled surface of the wafer held by the wafer holding unit; characterized in that it has Peeling device.

3. the cleaning brush is rotatable about an axis perpendicular to the holding surface of the wafer holding unit and the holding surface of the ingot holding unit; The cleaning brush is rotated around the axis and brought into contact with the wafer, thereby cleaning at least one of the peeled surface of the wafer held by the wafer holding unit and the peeled surface of the ingot held by the ingot holding unit. The peeling device according to claim 1 or 2.

4. The cleaning brush is a first cleaning brush facing the holding surface of the wafer holding unit and cleaning the peeled surface of the wafer peeled from the ingot; a second cleaning brush facing the holding surface of the ingot holding unit and cleaning the separation surface of the ingot from which the wafer has been separated; Including, cleaning the peeled surface of the wafer with the first cleaning brush and cleaning the peeled surface of the ingot with the second cleaning brush can be performed simultaneously. The peeling device according to any one of claims 1 to 3.

5. the ingot holding unit is rotatable about an axis perpendicular to a holding surface of the ingot holding unit; the wafer holding unit is rotatable about an axis perpendicular to a holding surface of the wafer holding unit; The peeled surface is cleaned by bringing at least one of the ingot holding unit and the wafer holding unit into contact with the cleaning brush while rotating the unit around the axis. The peeling device according to any one of claims 1 to 4.

6. The cleaning brush is an operating position facing at least one of a peeling surface of the ingot held by the ingot holding unit and a peeling surface of the wafer held by the wafer holding unit; a non-operating position that does not face either the peeled surface of the ingot held by the ingot holding unit or the peeled surface of the wafer held by the wafer holding unit; It is movable between The peeling device according to any one of claims 1 to 5.

7. The method further includes an ultrasonic wave applying unit that applies ultrasonic waves to the ingot. The peeling device according to any one of claims 1 to 6.

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