Semiconductor Devices

Abstract

To provide a semiconductor device that can improve a yield.SOLUTION: A semiconductor device 1 according to one embodiment includes: a first frame 10; a second frame 20 spaced apart from the first frame 10 in a first direction X; and a first joint terminal 24 provided above the second chip 21 provided on the second frame 20. The first frame 10 includes a first terminal portion T2 extending toward the second frame 20 side. The first joint terminal 24 includes a second terminal portion T3 extending toward the first frame 10 side. The second terminal portion T3 includes a plane portion 24j, and a first projecting portion (first branch portion) 24d and a second projecting portion (second branch portion) 24e each branching out from the plane portion 24j. An end portion of the first projecting portion 24d and an end portion of the second projecting portion 24e are each joined on the first terminal portion T2. A length in the first direction X of the first projecting portion 24d is different from a length in the first direction X of the second projecting portion 24e.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] FIELD An embodiment of the present invention relates to a semiconductor device. [Background technology]

[0002] Semiconductor devices using lead frames are known. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 9-129766 [Patent Document 2] Japanese Patent Application Laid-Open No. 2002-76230 [Patent Document 3] Japanese Patent Application Publication No. 8-17993 Summary of the Invention [Problem to be solved by the invention]

[0004] A semiconductor device capable of improving yield is provided. [Means for solving the problem]

[0005] A semiconductor device according to the embodiment comprises a first frame, a first chip provided on the first frame, a second frame spaced apart from the first frame in a first direction, a second chip provided on the second frame, and a first connecting terminal provided above the second chip and electrically connected to the second chip, wherein the first frame includes a first terminal portion extending toward the second frame, the first connecting terminal includes a second terminal portion extending toward the first frame, the second terminal portion includes a planar portion and a first branch portion and a second branch portion branching from the planar portion, respectively, an end of the first branch portion and an end of the second branch portion are respectively joined onto the first terminal portion, and the length of the first branch portion in the first direction is different from the length of the second branch portion in the first direction. [Brief explanation of the drawings]

[0006] [Figure 1] FIG. 1 is a plan view showing an example of the configuration of a semiconductor device according to an embodiment. [Figure 2] FIG. 2 is a plan view showing an example of the internal configuration of the semiconductor device according to the embodiment. [Figure 3] FIG. 3 is an enlarged view showing a part of the internal configuration of the semiconductor device according to the embodiment. [Figure 4] FIG. 4 is a perspective view showing a part of the internal configuration of the semiconductor device according to the embodiment. [Figure 5] FIG. 5 is a cross-sectional view showing an example of the cross-sectional structure of the semiconductor device according to the embodiment. [Figure 6] FIG. 6 is a cross-sectional view showing an example of the cross-sectional structure of the semiconductor device according to the embodiment. [Figure 7] FIG. 7 is a diagram illustrating a resin forming step in the manufacturing process of the semiconductor device according to the embodiment. [Figure 8] FIG. 8 is a diagram illustrating the flow of resin when the resin is formed in the manufacturing process of the semiconductor device according to the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, embodiments will be described with reference to the drawings. In the following description, components having substantially the same functions and configurations are designated by the same reference numerals, and repeated explanations may be omitted. Furthermore, all descriptions of one embodiment also apply to descriptions of other embodiments, unless explicitly or obviously excluded.

[0008] 1. Embodiment A semiconductor device according to an embodiment will be described. The following description will be given taking as an example a semiconductor device using a lead frame. The semiconductor device is used, for example, in a transistor package.

[0009] 1.1 Configuration of semiconductor device The configuration of the semiconductor device according to this embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view showing an example of the configuration of the semiconductor device. In the example of FIG. 1, resin is shown by solid lines. Internal components covered by resin are shown by dashed lines. The outside of the resin (portions not covered by resin) is shown by solid lines. FIG. 2 is a plan view showing an example of the internal configuration of the semiconductor device. In the example of FIG. 2, the resin is omitted.

[0010] 1, the semiconductor device 1 includes a lead frame 10, a chip 11, electrodes 12, 12a, a bonding member 13, bonding terminals 14, electrode terminals 15, wiring 16, electrode terminals 17, a lead frame 20, a chip 21, electrodes 22, 22a, a bonding member 23, bonding terminals 24, electrode terminals 25, wiring 26, and a resin 30. In the following description, the X direction is approximately parallel to the surface of the lead frame 10 and corresponds to, for example, the direction from the lead frame 10 toward the lead frame 20 (the direction from electrode terminal 17 toward electrode terminal 15). The Y direction is approximately parallel to the surface of the lead frame 10 and corresponds to, for example, the direction from the lead frame 10 toward the electrode terminal 17. The Z direction is approximately perpendicular to the surface of the lead frame 10 and corresponds to the direction from the lead frame 10 toward the chip 11.

[0011] The resin 30 is, for example, an epoxy resin, and covers a part of the lead frame 10, the chip 11, the electrodes 12, 12a, the bonding members 13, the bonding terminals 14, parts of the electrode terminals 15, the wiring 16, parts of the electrode terminals 17, a part of the lead frame 20, the chip 21, the electrodes 22, 22a, the bonding members 23, the bonding terminals 24, parts of the electrode terminals 25, and the wiring 26.

[0012] As shown in FIG. 2, the lead frame 10 is a frame that supports and fixes the chip 11. The lead frame 10 has, for example, a plate shape. The end of the lead frame 10 opposite the electrode terminal 17 extends in the Y direction. The lead frame 10 is made of a conductive material, which may be, for example, a metal material. Details of the lead frame 10 will be described later.

[0013] The chip 11 is, for example, an IC (Integrated Circuit) chip. The chip 11 is provided on the lead frame 10.

[0014] The electrode 12 is, for example, a gate electrode. The electrode 12 is provided on the chip 11. The electrode 12 is made of a conductive material, and may be, for example, a metal material. The electrode 12 may have, for example, a junction terminal.

[0015] The electrode 12a is, for example, a source electrode. The electrode 12a has, for example, a substantially L-shape in top view (when viewed from the upper side of the paper surface of FIG. 2). The electrode 12a is provided on the chip 11. The electrode 12a is made of a conductive material, which may be, for example, a metal material. In addition, a drain electrode made of a conductive material, such as a metal material, is provided on the top or back side of the chip 11.

[0016] The bonding member 13 is, for example, solder. The bonding member 13 has, for example, a substantially L-shape in top view. The bonding member 13 is provided on the electrode 12a. The bonding member 13 electrically connects the electrode 12a and the bonding terminal 14.

[0017] The bonding terminal 14 is, for example, a terminal that electrically connects the electrode 12a and the electrode terminal 17. The bonding terminal 14 has, for example, a substantially L-shape in top view. The bonding terminal 14 is provided on the bonding member 13. The bonding terminal 14 is electrically connected to the chip 11 via the bonding member 13 and the electrode 12a. The bonding terminal 14 is made of a conductive material, and may be, for example, a metal material. Details of the bonding terminal 14 will be described later.

[0018] The electrode terminal 15 is, for example, a gate terminal. The electrode terminal 15 is provided spaced apart from the lead frame 10 in the Y direction. The end of the electrode terminal 15 opposite the lead frame 10 extends in the Y direction. The electrode terminal 15 is made of a conductive material, and may be, for example, a metal material.

[0019] The electrode terminal 15 includes a base 15a, a bent portion 15b, and a joint portion 15c. The electrode terminal 15 is bent upward at the boundary between the base 15a and the bent portion 15b, and is bent in the Y direction at the boundary between the bent portion 15b and the joint portion 15c. The surface of the base 15a and the surface of the joint portion 15c are substantially parallel. The surface of the joint portion 15c is located higher than the surface of the base 15a. In other words, the electrode terminal 15 has a step in the Y direction.

[0020] The wiring 16 is, for example, a bonding wire. One end of the wiring 16 is joined to the electrode 12. The other end of the wiring 16 is joined to the joining portion 15c of the electrode terminal 15. The wiring 16 electrically connects the electrode 12 and the electrode terminal 15. The wiring 16 is made of a conductive material, and may be, for example, a metal material. Note that if the electrode 12 has a joining terminal, the joining terminal of the electrode 12 may be electrically connected to the electrode terminal 15 instead of the wiring 16.

[0021] The electrode terminal 17 is, for example, a source terminal. The electrode terminal 17 is provided spaced apart from the electrode terminal 15 in the X direction. The electrode terminal 17 is provided spaced apart from the lead frame 10 in the Y direction. The end of the electrode terminal 17 opposite to the lead frame 10 extends in the Y direction. The electrode terminal 17 is made of a conductive material, and may be, for example, a metal material.

[0022] The electrode terminal 17 includes a base portion 17a, a bent portion 17b, and a joint portion 17c. The electrode terminal 17 is bent upward at the boundary between the base portion 17a and the bent portion 17b, and is bent in the Y direction at the boundary between the bent portion 17b and the joint portion 17c. The surface of the base portion 17a and the surface of the joint portion 17c are approximately parallel. The surface of the joint portion 17c is located higher than the surface of the base portion 17a. In other words, the electrode terminal 17 has a step in the Y direction.

[0023] The lead frame 20 is a frame that supports and fixes the chip 21. The lead frame 20 has, for example, a plate shape. The lead frame 20 is provided spaced apart from the lead frame 10 in the X direction. The end of the lead frame 20 opposite the electrode terminal 25 extends in the Y direction. The lead frame 20 is made of a conductive material, and may be, for example, a metal material.

[0024] The chip 21 is, for example, an IC chip. The chip 21 is provided on a lead frame 20.

[0025] The electrode 22 is, for example, a gate electrode. The electrode 22 is provided on the chip 21. The electrode 22 is made of a conductive material, and may be, for example, a metal material. The electrode 22 may have, for example, a bonding terminal.

[0026] The electrode 22a is, for example, a source electrode. The electrode 22a has, for example, a substantially L-shape in top view. The electrode 22a is provided on the chip 21. The electrode 22a is made of a conductive material, which may be, for example, a metal material. In addition, a drain electrode made of a conductive material, such as a metal material, is provided on the top or back side of the chip 21.

[0027] The bonding member 23 is, for example, solder. The bonding member 23 has, for example, a substantially L-shape in top view. The bonding member 23 is provided on the electrode 22a. The bonding member 23 electrically connects the electrode 22a and the bonding terminal 24.

[0028] The bonding terminals 24 are, for example, terminals that electrically connect the electrodes 22a and the lead frame 10. The bonding terminals 24 have, for example, a substantially L-shape when viewed from above. The bonding terminals 24 are provided on the bonding members 23. The bonding terminals 24 are electrically connected to the chip 21 via the bonding members 23 and the electrodes 22a. The bonding terminals 24 are made of a conductive material, and may be, for example, a metal material. Details of the bonding terminals 24 will be described later.

[0029] The electrode terminal 25 is, for example, a gate terminal. The electrode terminal 25 is provided spaced apart from the electrode terminal 15 in the X direction. The electrode terminal 25 is provided spaced apart from the lead frame 20 in the Y direction. The end of the electrode terminal 25 opposite to the lead frame 20 extends in the Y direction. The electrode terminal 25 is made of a conductive material and may be, for example, a metal material.

[0030] The electrode terminal 25 includes a base portion 25a, a bent portion 25b, and a joint portion 25c. The electrode terminal 25 is bent upward at the boundary between the base portion 25a and the bent portion 25b, and is bent in the Y direction at the boundary between the bent portion 25b and the joint portion 25c. The surface of the base portion 25a and the surface of the joint portion 25c are approximately parallel. The surface of the joint portion 25c is located higher than the surface of the base portion 25a. In other words, the electrode terminal 25 has a step in the Y direction.

[0031] The wiring 26 is, for example, a bonding wire. One end of the wiring 26 is joined to the electrode 22. The other end of the wiring 26 is joined to the joining portion 25c of the electrode terminal 25. The wiring 26 electrically connects the electrode 22 and the electrode terminal 25. The wiring 26 is made of a conductive material, and may be, for example, a metal material. Note that if the electrode 22 has a joining terminal, the joining terminal of the electrode 22 may be electrically connected to the electrode terminal 25 instead of the wiring 26.

[0032] The joining terminal 14 will be described in detail with reference to FIG.

[0033] 2, the joining terminal 14 includes a base portion 14a and a terminal portion T1. The terminal portion T1 is provided at the end of the joining terminal 14 on the electrode terminal 17 side. The terminal portion T1 has, for example, a substantially rectangular shape in top view. The terminal portion T1 includes a bent portion 14b, a bridge portion 14c, a bent portion 14d, and a joining portion 14e.

[0034] For example, the joining terminal 14 bends upward at the boundary between the base portion 14a and the bending portion 14b, and bends in the Y direction at the boundary between the bending portion 14b and the bridge portion 14c. For example, the joining terminal 14 bends downward at the boundary between the bridge portion 14c and the bending portion 14d, and bends in the Y direction at the boundary between the bending portion 14d and the joining portion 14e. The surfaces of the base portion 14a, the bridge portion 14c, and the joining portion 14e are substantially parallel. The surface of the bridge portion 14c is located higher than the surfaces of the base portion 14a and the joining portion 14e. In other words, the joining terminal 14 has a step in the Y direction.

[0035] 2, the terminal portion T1 is provided on the electrode terminal 17. More specifically, the joint portion 14e of the joint terminal 14 is joined onto the joint portion 17c of the electrode terminal 17. This electrically connects the terminal portion T1 to the electrode terminal 17. In other words, the joint terminal 14 is electrically connected to the electrode terminal 17 via the terminal portion T1.

[0036] A resin injection port (reference symbol a in FIG. 1) is provided at the end of the housing of the semiconductor device 1 on the lead frame 10 side and in the vicinity of the electrode terminal 17. In addition, a vent hole (reference symbol b in FIG. 1) is provided at the end opposite to the injection port, at the end of the housing of the semiconductor device 1 on the lead frame 20 side, at a position aligned with the injection port in the X direction.

[0037] Details of the lead frame 10 will be described with reference to Fig. 3. Fig. 3 is an enlarged view (enlarged view of region R1 in Fig. 2) showing a part of the internal configuration of the semiconductor device 1. Note that in the example of Fig. 3, the chips 11 and 21, the electrodes 22 and 22a, and the bonding member 23 are omitted.

[0038] 3, the lead frame 10 includes a terminal portion T2. ​​The terminal portion T2 is provided at an end portion of the lead frame 10 on the joining terminal 24 side (lead frame 20 side). The terminal portion T2 extends toward the joining terminal 24 side. The terminal portion T2 has, for example, a substantially U-shape in top view. However, the length in the X direction of the portion of terminal portion T2 on the lower side of the paper in FIG. 3 that is relatively close to the resin injection port is shorter than the length in the X direction of the portion on the upper side of the paper in FIG. 3 that is relatively far from the resin injection port. That is, the end portion of terminal portion T2 on the lead frame 20 side at a portion on the lower side of the paper in Figure 3 that is relatively close to the portion connecting the resin injection port and the vent hole is located closer to the resin injection port compared to the end portion of terminal portion T2 on the lead frame 20 side at a portion on the upper side of the paper in Figure 3 that is relatively far from the portion connecting the resin injection port and the vent hole.

[0039] Terminal portion T2 includes protrusions 10d and 10e that branch off from base portion 10a and protrude toward joining terminal 24 (lead frame 20). In other words, the end of terminal portion T2 on the joining terminal 24 side is divided into two. Protrusions 10d and 10e branch off in the Y direction and extend in the X direction. Protrusion 10d is provided at a position farther from the portion connecting the resin injection port and the vent hole than protrusion 10e on the upper side of the paper in Fig. 3. Protrusion 10e is provided at a position closer to the portion connecting the resin injection port and the vent hole than protrusion 10d on the lower side of the paper in Fig. 3. However, the length of protrusion 10e in the X direction at terminal T2 is shorter than the length of protrusion 10d in the X direction. That is, the end of the terminal T2 at the protruding portion 10e on the lead frame 20 side is located closer to the resin injection port than the end of the terminal T2 at the protruding portion 10d on the lead frame 20 side.

[0040] The joining terminal 24 will be described in detail with reference to FIG.

[0041] 3, the joining terminal 24 includes a base portion 24a and a terminal portion T3. The terminal portion T3 is provided at the end of the joining terminal 24 on the lead frame 10 side. The terminal portion T3 extends toward the lead frame 10. The terminal portion T3 has, for example, a substantially Y-shape in top view. However, the length in the X direction of the portion of terminal portion T3 that is relatively close to the vent hole in the resin on the lower side of the paper in Figure 3 is longer than the length in the X direction of the portion of the resin that is relatively far from the vent hole on the upper side of the paper in Figure 3. Terminal portion T3 includes a bent portion 24b, a bridge portion 24c, bent portions 24f and 24g, and joint portions 24h and 24i. The bent portion 24f and the joint portion 24h of the terminal portion T3 are located on the upper side of the paper in FIG. 3 at the terminal portion T3, farther from the portion connecting the resin injection port and the vent hole than the bent portion 24g and the joint portion 24i, and the bent portion 24g and the joint portion 24i of the terminal portion T3 are located on the lower side of the paper in FIG. 3 at the terminal portion T3, closer to the portion connecting the resin injection port and the vent hole than the bent portion 24f and the joint portion 24h. That is, the end of terminal portion T3 on the lead frame 10 side at protrusion 24e (second branch portion) is located closer to the resin injection port than the end of terminal portion T3 on the lead frame 10 side at protrusion 24d (first branch portion).

[0042] For example, the joining terminal 24 bends upward at the boundary between the base portion 24a and the bent portion 24b, and bends in the X direction at the boundary between the bent portion 24b and the bridge portion 24c. For example, the joining terminal 24 bends downward at the boundary between the bridge portion 24c and the bent portion 24f, and bends in the X direction at the boundary between the bent portion 24f and the joint portion 24h. For example, the joining terminal 24 bends downward at the boundary between the bridge portion 24c and the bent portion 24g, and bends in the X direction at the boundary between the bent portion 24g and the joint portion 24i. The surface of the base portion 24a and the surface of the bridge portion 24c are approximately parallel. The surface of the bridge portion 24c is located higher than the surfaces of the base portion 24a, the joint portion 24h, and the joint portion 24i. In other words, the joining terminal 24 has a step in the X direction.

[0043] Terminal portion T3 includes protrusions 24d and 24e that protrude toward the lead frame 10. In other words, the end of terminal portion T3 on the lead frame 10 side is divided into two. Protrusions 24d and 24e are spaced apart from each other in the Y direction. In other words, the terminal portion T3 has a flat portion 24j and a protruding portion 24d (first branch portion) and a protruding portion 24e (second branch portion) that branch off from the flat portion 24j. The protruding portions 24d and 24e branch off in the Y direction and extend in the X direction. Protrusion 24d is provided at a position farther from the portion connecting the resin injection port and the vent hole than protrusion 24e on the upper side of the paper in Fig. 3. Protrusion 24e is provided at a position closer to the portion connecting the resin injection port and the vent hole than protrusion 24d on the lower side of the paper in Fig. 3. However, the length of protrusion 24e in the X direction at terminal T3 is longer than the length of protrusion 24d in the X direction. The protruding portion 24d includes a part of the bridge portion 24c, a bent portion 24f, and a joint portion 24h. The protruding portion 24e includes a part of the bridge portion 24c, a bent portion 24g, and a joint portion 24i.

[0044] As shown in FIG. 3 , the end of terminal T3 is provided on terminal T2. More specifically, bonding portion 24h of terminal T3 is bonded to protrusion 10d of terminal T2. Bonding portion 24i of terminal T3 is bonded to protrusion 10e of terminal T2. In other words, the end of protrusion 24d of terminal T3 is bonded to protrusion 10d of terminal T2. The end of protrusion 24e of terminal T3 is bonded to protrusion 10e of terminal T2. That is, terminal T3 and terminal T2 are bonded at two bonding surfaces. Hereinafter, the bonding surfaces, the end of terminal T2 contacting the bonding surfaces, and the end of terminal T3 contacting the bonding surfaces will be collectively referred to as the "bonding portion." This electrically connects terminal T3 to terminal T2. In other words, bonding terminal 24 is electrically connected to lead frame 10 via terminals T3 and T2.

[0045] The lead frame 10, electrode terminals 15 and 17, lead frame 20, and electrode terminal 25 shown in FIG. 2 are, for example, parts of a lead frame (not shown), and are the remaining parts that remain after the lead frame (not shown) is cut and removed during the manufacturing process.

[0046] Fig. 4 is a perspective view (a perspective view of region R1 in Fig. 2) showing a part of the internal configuration of semiconductor device 1. Note that in the example of Fig. 4, electrodes 22 are omitted.

[0047] As shown in Fig. 4, an end of protrusion 24d is joined to an end of protrusion 10d. The end of protrusion 24d is joined to protrusion 10d by a joining member 27 formed on the end of protrusion 10d. The joining member 27 is, for example, solder. The joining member 27 electrically connects terminal T2 and terminal T3. As shown in Fig. 4, an end of protrusion 24e is joined to an end of protrusion 10e. The end of protrusion 24e is joined to protrusion 10e by a joining member 27 formed on the end of protrusion 10e.

[0048] The end face of terminal portion T3 (the face of terminal portion T3 sandwiched between protrusions 24d and 24e and facing lead frame 10 (hereinafter also referred to as "face P2")) is located closer to lead frame 20 than the end face of terminal portion T2 (the face of terminal portion T2 sandwiched between protrusions 10d and 10e and facing lead frame 20 (hereinafter also referred to as "face P1")).

[0049] With the above structure, the upper portion of the space (hereinafter also referred to as "space S1") surrounded by terminal portion T2, bonding member 27, terminal portion T3, bonding member 23, electrode 22a, chip 21, and lead frame 20 is not blocked by terminal portions T2 and T3. If the surface of protrusion 24d facing protrusion 24e is referred to as "surface P3" and the surface of protrusion 24e facing protrusion 24d is referred to as "surface P4," semiconductor device 1 has an area surrounded by surfaces P1, P2, P3, and P4. In other words, an opening (hereinafter also referred to as "opening OP1") is formed by terminal portion T2 and terminal portion T3 (by protrusion 10d, protrusion 10e, protrusion 24d, and protrusion 24e). That is, semiconductor device 1 has opening OP1 formed by terminal portion T2 and terminal portion T3. The area surrounded by the surfaces P1, P2, P3, and P4 corresponds to the opening OP1. Furthermore, both ends of the space S1 in the Y direction are not blocked.

[0050] The cross-sectional structure of the semiconductor device 1 will be described with reference to Figures 5 and 6. Figure 5 is a cross-sectional view (a cross-sectional view taken along line I1-I1 in Figure 1) showing an example of the structure of the semiconductor device 1. Figure 6 is a cross-sectional view (a cross-sectional view taken along line I2-I2 in Figure 1) showing an example of the structure of the semiconductor device 1.

[0051] 5, a chip 11 is provided on a lead frame 10. An electrode 12a is provided on the chip 11. A bonding member 13 is provided on the electrode 12a. A bonding terminal 14 is provided on the bonding member 13.

[0052] A chip 21 is provided on a lead frame 20. An electrode 22a is provided on the chip 21. A bonding member 23 is provided on the electrode 22a. A bonding terminal 24 is provided on the bonding member 23. The bonding terminal 24 is bent by bending portions 24b and 24f so that the surface of bridge portion 24c is positioned higher than the surface of base portion 10a.

[0053] The joint portion 24h is joined to the base portion 10a by a joint member 27.

[0054] The lead frame 10, chip 11, electrodes 12a, bonding members 13, bonding terminals 14, lead frame 20, chip 21, electrodes 22a, bonding members 23, and bonding terminals 24 are covered with resin 30. Resin 30 is embedded in space S1.

[0055] 6, a chip 11 is provided on a lead frame 10. An electrode 12a is provided on the chip 11. A bonding member 13 is provided on the electrode 12a. A bonding terminal 14 is provided on the bonding member 13.

[0056] A chip 21 is provided on a lead frame 20. An electrode 22a is provided on the chip 21. A bonding member 23 is provided on the electrode 22a. A bonding terminal 24 is provided on the bonding member 23. The bonding terminal 24 is bent by bending portions 24b and 24g so that the surface of the bridge portion 24c is positioned higher than the surface of the base portion 10a. The joint portion 24i is joined to the base portion 10a by a joint member 27.

[0057] 1.2 Semiconductor device manufacturing method A method for manufacturing the semiconductor device 1 will be described. In this embodiment, multiple semiconductor devices 1 are formed on one lead frame. Before forming the resin 30, the internal components of the semiconductor device 1 shown in FIG. 2 (hereinafter also referred to as "component group") are arranged in a matrix on one lead frame. These multiple component groups are sealed with the resin 30. Below, the process for forming the resin 30 will be described with reference to FIG. 7. FIG. 7 is a diagram illustrating the process for forming the resin 30. The example in FIG. 7 shows a method (transfer method) in which the resin 30 is formed using a mold 50 on multiple component groups arranged in a row in the X direction on a lead frame 40.

[0058] As shown in Fig. 7, resin 30 is injected from an injection port of mold 50. Resin 30 flows in the X direction (the direction from the left side of the paper surface of Fig. 7 to the right side of the paper surface of Fig. 7) from the injection port of mold 50 to the end of mold 50. As a result, a group of multiple components provided on lead frame 40 is sealed with resin 30 between the injection port of mold 50 and the end of mold 50.

[0059] After the resin 30 is formed, the lead frame 40 is cut and removed, and a plurality of semiconductor devices 1 are formed.

[0060] The flow of the resin 30 during the formation of the resin 30 will be described with reference to Fig. 8. Fig. 8 is a diagram illustrating the flow of the resin 30. In the example of Fig. 8, arrows indicate the flow of the resin 30 injected into the component group of the semiconductor device 1 shown in Fig. 2 toward the space S1.

[0061] 8, resin 30 is injected from the X direction (lead frame 10 side). Resin 30 flows around protrusion 24d to the outside and into space S1. Resin 30 flows around protrusion 24e to the outside and into space S1. Resin 30 flows downward through opening OP1 formed by terminal portion T2 and terminal portion T3 and into space S1.

[0062] The configuration according to this embodiment can improve the yield of semiconductor devices. In this embodiment, the terminal portion T2 includes protrusions 10d and 10e that protrude toward the joining terminal 24. The protrusions 10d and 10e are spaced apart from each other in the Y direction. The terminal portion T3 includes protrusions 24d and 24e that protrude toward the lead frame 10. The protrusions 24d and 24e are spaced apart from each other in the Y direction.

[0063] In a configuration in which the terminal portions T2 and T3 extend in the direction in which the resin 30 is injected and the end of the terminal portion T3 is joined onto the terminal portion T2, the resin 30 flows around the terminal portion T3 to the outside and into the space S1. However, the flow of the resin 30 is obstructed by the terminal portions T2 and T3 extending in the direction in which the resin 30 is injected, which may result in voids in the space S1 or the space S1 not being filled with the resin 30.

[0064] In contrast, in this embodiment, the end of the protrusion 24d of the terminal T3 is provided on the protrusion 10d of the terminal T2. The end of the protrusion 24e of the terminal T3 is provided on the protrusion 10e of the terminal T2. The surface P2 of the terminal T3, which is sandwiched between the protrusions 24d and 24e and faces the lead frame 10, is located closer to the lead frame 20 than the surface P1 of the terminal T2, which is sandwiched between the protrusions 10d and 10e and faces the lead frame 20. In other words, the semiconductor device 1 has an opening OP1 formed by the terminal T2 and the terminal T3. Therefore, in the resin 30 formation process, the resin 30 not only flows around the protrusions 24d and 24e to the outside and into the space S1, but also flows downward through the opening OP1 and into the space S1. This improves the filling ability of the resin 30. This allows, for example, a resin with a relatively short curing time to be used as the resin 30.

[0065] The larger the area of ​​the resin 30 covering the terminal portion T2 (the area of ​​the resin 30 in contact with the terminal portion T2), the larger the difference between the expansion of the terminal portion T2 due to heat and the expansion of the resin 30. Therefore, depending on the area of ​​the resin 30 covering the terminal portion T2, there is a possibility that the terminal portion T2 and the resin 30 will peel off due to heat. Similarly, for the terminal portion T3, depending on the area of ​​the resin 30 covering the terminal portion T3 (the area of ​​the resin 30 in contact with the terminal portion T3), there is a possibility that the terminal portion T3 and the resin 30 will peel off due to heat.

[0066] In contrast, in this embodiment, the semiconductor device 1 has an opening OP1 formed by the terminal portion T2 and the terminal portion T3. Therefore, the area of ​​the resin 30 covering the terminal portion T2 is smaller than the area of ​​the resin 30 covering the terminal portion T2 when no opening is formed. As a result, the difference between the expansion of the terminal portion T2 and the expansion of the resin 30 due to heat is smaller than the difference between the expansion of the terminal portion T2 and the expansion of the resin 30 when no opening is formed. The area of ​​the resin 30 covering the terminal portion T3 is smaller than the area of ​​the resin 30 covering the terminal portion T3 when no opening is formed. As a result, the difference between the expansion of the terminal portion T3 and the expansion of the resin 30 due to heat is smaller than the difference between the expansion of the terminal portion T3 and the expansion of the resin 30 when no opening is formed. Therefore, peeling between the terminal portion T2 and the resin 30 and between the terminal portion T3 and the resin 30 can be suppressed.

[0067] In addition, in a configuration that assumes that the position of the end of protrusion 10d on the lead frame 20 side of terminal portion T2 of lead frame 10 described above and the position of the end of protrusion 10e on the lead frame 20 side of terminal portion T2 are aligned in a direction that intersects the direction from the resin injection port to the ventilation port, and that the position of the end of protrusion 24d on the lead frame 10 side of terminal portion T3 of lead frame 20 and the position of the end of protrusion 10e on the lead frame 10 side of terminal portion T3 are aligned in a direction that intersects the direction from the resin injection port to the ventilation port, resin will merge on the back side of terminal portions T2 and T3 in space S1, posing a risk of insufficient strength or poor appearance due to a defect called a weld line.

[0068] In contrast, in this embodiment, the end of the protrusion 10e at the terminal T2 of the lead frame 10 on the lead frame 20 side is located closer to the resin injection port than the end of the protrusion 10d at the terminal T2 on the lead frame 20 side, which is farther from the injection port than the protrusion 10e, and the end of the protrusion 24e at the terminal T3 of the lead frame 20 on the lead frame 10 side, which is closer to the injection port than the protrusion 24d, is located closer to the resin injection port than the end of the protrusion 24d at the terminal T3 on the lead frame 10 side. In other words, protrusion 10d protrudes further toward the lead frame 20 than protrusion 10e, and the length of protrusion 10d in the X direction is longer than the length of protrusion 10e in the X direction. In this case, the length of protrusion (first branch) 24d in the X direction is shorter than the length of protrusion (second branch) 24e in the X direction. In this case, protrusion 24e is located closer to the electrode (gate electrode) 12 than protrusion 24d. In other words, the length of protrusion 24d in the X direction is different from the length of protrusion 24e in the X direction.

[0069] This improves the fluidity of the resin flowing between the forks of terminal portion T2 and between the forks of terminal portion T3, thereby preventing the resin from merging on the back side of terminal portions T2 and T3 in space S1.

[0070] Furthermore, as described above, in the configuration in which the end of the multiple protrusions in the terminal portions T2 and T3 that is closest to the injection port is positioned closer to the injection port, the fluidity of the resin flowing between the forks of the terminal portion T2 and between the forks of the terminal portion T3 can be further improved.

[0071] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0072] 1...semiconductor device, 10...lead frame, 11...chip, 12...electrode, 12a...electrode, 13...bonding member, 14...bonding terminal, 15...electrode terminal, 16...wiring, 17...electrode terminal, 18...bonding member, 20...lead frame, 21...chip, 22...electrode, 22a...electrode, 23...bonding member, 24...bonding terminal, 25...electrode terminal, 26...wiring, 27...bonding member, 30...resin, 40...lead frame, 50...mold, T1, T2, T3...terminal portion.

Claims

1. A first frame; a first chip provided on the first frame; a second frame spaced apart from the first frame in a first direction; a second chip provided on the second frame; a first connecting terminal provided above the second chip and electrically connected to the second chip; Equipped with the first frame includes a first terminal portion extending toward the second frame, the first connecting terminal includes a second terminal portion extending toward the first frame, the second terminal portion includes a planar portion and a first branch portion and a second branch portion branching from the planar portion, an end of the first branch portion and an end of the second branch portion are joined onto the first terminal portion, a length of the first branch portion in the first direction is different from a length of the second branch portion in the first direction; Semiconductor device.

2. a first surface of the second terminal portion that is sandwiched between the first branch portion and the second branch portion and faces the first frame is located closer to the second frame than a second surface of the first terminal portion that faces the second frame; The semiconductor device according to claim 1.

3. 3. The semiconductor device according to claim 2, further comprising an area surrounded by the first surface of the second terminal portion, the second surface of the first terminal portion, a third surface of the first branch portion facing the second branch portion, and a fourth surface of the second branch portion facing the first branch portion.

4. the first terminal portion includes a third branch portion and a fourth branch portion, each of which protrudes toward the second frame and is spaced apart from each other in a second direction intersecting the first direction; an end of the first branch is joined onto the third branch; an end of the second branch portion is joined onto the fourth branch portion; the second surface of the first terminal portion is sandwiched between the third branch portion and the fourth branch portion; 3. The semiconductor device according to claim 2.

5. further comprising a gate electrode; the second branch portion is closer to the gate electrode than the first branch portion, and the length of the second branch portion in the first direction is longer than the length of the first branch portion in the first direction; The semiconductor device according to claim 1.

6. the first terminal portion includes a third branch portion and a fourth branch portion each branching toward the second frame, an end of the second terminal portion is joined onto the third branch portion and the fourth branch portion; a length of the third branch portion in the first direction is different from a length of the fourth branch portion in the first direction; The semiconductor device according to claim 1.

7. further comprising a gate electrode; the fourth branch portion is closer to the gate electrode than the third branch portion, and the length of the fourth branch portion in the first direction is shorter than the length of the third branch portion in the first direction; 7. The semiconductor device according to claim 6.

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