Mounting table and substrate processing apparatus

Abstract

To provide a placing table and substrate processing equipment that improves maintainability.SOLUTION: A placing table comprises: a dielectric plate having a substrate placing portion on which a substrate is placed and a gas flow path connected to the substrate placing portion; a gas supply connected to the gas flow path in the dielectric plate; a support member with a digging portion; a heat insulating member placed between the dielectric plate and the support member; and a force member positioned between the heat insulating member and the support member.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present invention relates to a mounting table and a substrate processing apparatus. [Background technology]

[0002] 2. Description of the Related Art A substrate processing apparatus has a mounting table for mounting a substrate within a chamber. Patent Document 1 discloses a substrate processing apparatus in which a susceptor having an electrostatic chuck is disposed within a processing chamber. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 5270310 Summary of the Invention [Problem to be solved by the invention]

[0004] Incidentally, when maintenance of a substrate processing apparatus is performed, for example, the dielectric plate (electrostatic chuck) of a mounting table disposed in a chamber is replaced, and therefore, there is a demand for improved maintainability of the mounting table.

[0005] In response to the above-described problem, an object of the present invention is to provide a mounting table and a substrate processing apparatus that are easy to maintain. [Means for solving the problem]

[0006] In order to solve the above problem, according to one aspect, a dielectric plate having a substrate placement portion for placing a substrate thereon and having a gas flow path communicating with the substrate placement portion, a gas supply portion connected to the gas flow path of the dielectric plate, a support member having a recessed portion, a heat insulating member arranged between the dielectric plate and the support member, and an urging member arranged between the heat insulating member and the support member, the gas supply unit has a nozzle connected to the gas flow path of the dielectric plate, the recessed portion provided in the support member has a first recessed portion, the heat insulating member has a first heat insulating member arranged between the nozzle and the support member, the biasing member has a first biasing member, the first biasing member is arranged between the first heat insulating member and the support member, and lower ends of the first biasing member and the first heat insulating member are arranged in the first recessed portion. A mounting platform is provided. [Effects of the Invention]

[0007] According to one aspect, it is possible to provide a mounting table and a substrate processing apparatus that improve maintainability. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 2 is a schematic cross-sectional view of an example of a substrate processing apparatus according to the present embodiment. [Figure 2] 1 is a side view of an example of an electrostatic chuck. [Figure 3] FIG. 10 is an example of a top view of a stage with the electrostatic chuck removed. [Figure 4] 1 is an example of a cross-sectional view of a stage. [Figure 5] FIG. 10 is an example of a partially enlarged perspective cross-sectional view of a stage. [Figure 6] FIG. 10 is an example of a partially enlarged perspective cross-sectional view of a stage. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In this specification and the drawings, substantially identical components are designated by the same reference numerals, and redundant description will be omitted.

[0010] A substrate processing apparatus 1 according to this embodiment will be described with reference to Fig. 1. Fig. 1 is an example of a schematic cross-sectional view of the substrate processing apparatus 1 according to this embodiment. The substrate processing apparatus 1 includes a stage (mounting table) 40, a power supply 50, a heat transfer gas supply unit 60, a processing gas supply unit 70, an exhaust unit 80, and a chamber 90.

[0011] The chamber 90 has a lid 91 and a container 92. The container 92 is a container that opens at the top. The lid 91 closes the opening of the container 92, making the chamber 90 airtight. A stage 40 is provided inside the chamber 90 on which a substrate W, which is an object to be processed, is placed. The stage 40 has an electrostatic chuck 10, a stand 20, and a water-cooled flange 30.

[0012] The electrostatic chuck 10 attracts and supports a substrate W placed on a substrate mounting portion 11 (see FIG. 2, which will be described later). The electrostatic chuck 10 is formed of a dielectric plate and is made of ceramics (e.g., alumina). A heater 15 is provided within the electrostatic chuck 10 to adjust the temperature of the substrate mounting portion 11 on which the substrate W is placed. The heater 15 may be divided into multiple sections in the circumferential and / or radial directions of the electrostatic chuck 10 so that the temperatures can be controlled individually. The electrostatic chuck 10 also includes an electrode (not shown) for electrostatically attracting the substrate W.

[0013] The electrostatic chuck 10 is configured to be detachable from the stand 20. The stand 20 supports the electrostatic chuck 10. The water-cooled flange 30 supports the stand 20. A flow path (not shown) through which cooling water flows is formed within the water-cooled flange 30. As a result, when the substrate processing apparatus 1 performs a desired process on the substrate W, the water-cooled flange 30 is kept at a lower temperature than the electrostatic chuck 10. The structure of the stage 40 will be described later with reference to FIGS. 2 to 6.

[0014] The power supply 50 supplies power to the heater 15 of the electrostatic chuck 10. The substrate processing apparatus 1 also includes a power supply (not shown) that supplies power to an electrode (not shown) for electrostatic adsorption in the electrostatic chuck 10. For example, when a DC voltage is applied to the electrode for electrostatic adsorption, the substrate W is adsorbed to the electrostatic chuck 10 by Coulomb force.

[0015] The heat transfer gas supply device 60 supplies a heat transfer gas (for example, He gas) between the substrate W and the electrostatic chuck 10. This improves the thermal conductivity between the substrate W and the electrostatic chuck 10.

[0016] The process gas supply unit 70 supplies a process gas into the chamber 90. The exhaust unit 80 exhausts the gas from the chamber 90.

[0017] With the above configuration, the substrate processing apparatus 1 attracts the substrate W placed on the stage 40 with the electrostatic chuck 10. The substrate processing apparatus 1 then controls the temperature of the substrate W by controlling the heater 15. For example, the temperature of the substrate W is controlled so as to be uniform across its surface. The substrate processing apparatus 1 creates a desired vacuum atmosphere in the chamber 90 with the exhaust device 80 and supplies a processing gas into the chamber 90 with the processing gas supply device 70, thereby performing a desired process (e.g., film formation process, etching process, etc.) on the substrate W placed on the stage (mounting table) 40.

[0018] <Stage> Next, the structure of the stage 40 on which the substrate W is placed will be further described with reference to Figs. 2 to 6. Fig. 2 is an example of a side view of the electrostatic chuck 10. Fig. 3 is an example of a top view of the stage 40 with the electrostatic chuck 10 removed. Fig. 4 is an example of a cross-sectional view of the stage 40 taken along line AA (see Fig. 3).

[0019] 2, the electrostatic chuck 10 has a substrate mounting portion 11 on which a substrate W is mounted, and an outer peripheral portion 12. A plurality of through holes 13 (see FIG. 4) through which bolts 25 (see FIG. 4) are inserted are formed in the outer peripheral portion 12 of the electrostatic chuck 10. The electrostatic chuck 10 is detachably fixed to a stand 20 by the bolts 25.

[0020] A plurality of contact pins 14 are provided upright on the back surface side of the electrostatic chuck 10. The contact pins 14 are connected to a heater 15 and an electrode (not shown) for electrostatic attraction, which are provided in a dielectric plate of the electrostatic chuck 10. When the electrostatic chuck 10 is attached to the stand 20, the contact pins 14 are electrically connected to a socket 285 (see FIGS. 3 and 4) of the stand 20.

[0021] 4, a nozzle insertion portion 16 into which a nozzle 62 is inserted is formed on the back surface side of the electrostatic chuck 10. A gas flow path 17 is also formed, which communicates from the nozzle insertion portion 16 to the substrate mounting portion 11 of the electrostatic chuck 10. When the electrostatic chuck 10 is attached to the stand 20, the nozzle 62 is inserted into the nozzle insertion portion 16. As a result, a heat transfer gas supplied from the nozzle 62 passes from the nozzle insertion portion 16 through the gas flow path 17 and is supplied between the substrate mounting portion 11 of the electrostatic chuck 10 and the substrate W (see FIG. 1).

[0022] The stand 20 includes a shaft (support member) 21, a circular member 22, a heat insulating member 23, and a biasing member 24.

[0023] Shaft 21 has a hollow portion 211 that penetrates vertically in the center. Shaft 21 also has a flange shape that widens on the upper side. A cylindrical recessed portion 212 is formed on the top surface of shaft 21. Furthermore, a female screw hole 213 with a smaller diameter than recessed portion 212 is formed on the bottom surface of recessed portion 212.

[0024] The circular ring member 22 has a circular ring portion 221. A through hole 222 for inserting a bolt 25 (see FIG. 4) is formed in the circular ring portion 221. A nozzle guide 223 is provided facing inward of the circular ring portion 221. The nozzle guide 223 is provided with a hole 224 through which the nozzle 62 is inserted. The hole 224 is formed larger than the nozzle 62, and the nozzle 62 is movable within the hole 224.

[0025] The heat insulating member 23 is a cylindrical member through which the bolt 25 can be inserted, and is made of, for example, ceramic.

[0026] The biasing member 24 is a member through which the bolt 25 can be inserted and which biases the bolt 25 in the axial direction. The biasing member 24 may be, for example, a spring washer, a disc spring, or the like.

[0027] The bolt 25 has a head, a shaft, and a threaded portion.

[0028] <Method of fixing the electrostatic chuck 10> Next, a method for fixing the electrostatic chuck 10 will be described with reference to FIG. 5 and FIG. 4 . FIG. 5 is an example of a partially enlarged perspective cross-sectional view of the stage 40 taken along line AA (see FIG. 3 ). A biasing member 24 is disposed in the recessed portion 212 of the shaft 21, and a heat insulating member 23 is disposed thereon. A circular member 22 is disposed on the heat insulating member 23. The electrostatic chuck 10 is disposed on the circular member 22. A bolt 25 is inserted through the through hole 13 of the electrostatic chuck 10, the through hole 222 of the circular member 22, the heat insulating member 23, and the biasing member 24. The threaded portion of the bolt 25 is threadedly engaged with the female threaded hole 213, thereby fixing the electrostatic chuck 10 to the stand 20.

[0029] Here, when processing the substrate W, the electrostatic chuck 10 is heated by the heater 15. Meanwhile, the shaft 21 is fixed to a water-cooled flange 30. In the stage 40 of this embodiment, the electrostatic chuck 10 is fixed to the shaft 21 via the heat insulating member 23, which makes it possible to suppress heat loss from the electrostatic chuck 10 to the shaft 21. This makes it possible to improve the temperature uniformity of the substrate mounting portion 11 of the electrostatic chuck 10.

[0030] Furthermore, the inner diameters of the through hole 13 of the electrostatic chuck 10 and the through hole 222 of the circular member 22 are formed to be larger than the outer diameter of the shaft portion of the bolt 25. As a result, even if a difference in thermal expansion occurs among the electrostatic chuck 10, the circular member 22, and the shaft 21, they slide on each other at their interfaces, thereby suppressing the occurrence of thermal stress.

[0031] Furthermore, since the biasing member 24 can be disposed between the shaft 21 and the heat insulating member 23, which have a lower temperature than the electrostatic chuck 10, it becomes possible to use a biasing member 24 with a lower heat resistance. In other words, the selection of the material for the biasing member 24 is improved.

[0032] <Method of connecting the heat transfer gas nozzle 62> Next, a method for fixing the electrostatic chuck 10 will be described with reference to Figures 2 to 5. The nozzle 62 is connected to a heat transfer gas supply device 60 (see Figure 1) via a heat transfer gas supply pipe 61.

[0033] A cylindrical recessed portion 214 is formed in the upper surface of shaft 21. A hole 215 having a smaller diameter than recessed portion 214 is formed in the bottom surface of recessed portion 214. A biasing member 27 is disposed in recessed portion 214 of shaft 21, and a heat insulating member 26 is disposed thereon. A nozzle 62 is disposed on top of heat insulating member 26. The horizontal movement of nozzle 62 is guided by a hole 224 in a nozzle guide 223.

[0034] Here, when the electrostatic chuck 10 is fixed to the shaft 21, the nozzle 62 is guided by the nozzle guide 223, and therefore the nozzle 62 can be easily inserted into the nozzle insertion portion 16 of the electrostatic chuck 10. Then, by fixing the electrostatic chuck 10 to the shaft 21 with the bolt 25, the nozzle 62 can be press-fitted into the nozzle insertion portion 16. Note that a seal member (not shown) may be provided between the nozzle 62 and the nozzle insertion portion 16.

[0035] In the stage 40 of the present embodiment, the nozzle 62 is supported on the shaft 21 via the heat insulating member 26, which makes it possible to suppress heat loss from the electrostatic chuck 10 to the shaft 21. This makes it possible to improve the temperature uniformity of the substrate mounting portion 11 of the electrostatic chuck 10.

[0036] Furthermore, since the biasing member 27 can be disposed between the shaft 21 and the heat insulating member 26, which have a lower temperature than the electrostatic chuck 10, it becomes possible to use a biasing member 27 having a lower heat resistance. In other words, the selection of the material for the biasing member 27 is improved.

[0037] <How to connect the contact pin 14> Next, a method for connecting the contact pins 14 will be described using Fig. 6 while also referring to Figs. 2 to 4. Fig. 6 is an example of a partially enlarged perspective cross-sectional view of the stage 40 taken along line BB (see Fig. 3). In the hollow portion 211 of the shaft 21, contacts 28 are provided, standing from the water-cooled flange 30. The contact 28 has a post member 281, a lower plate member 282, an upper plate member 283, a tubular member 284, a socket 285, a stranded wire 286, and a connector 287. The post member 281 stands upright from the water-cooled flange 30 and supports the lower plate member 282 and the upper plate member 283. The lower plate member 282 has a recessed portion 282a formed therein. The bottom surface of the recessed portion 282a is penetrated. The upper plate member 283 has a through-hole 283a formed therein.

[0038] Socket 285 has a shaft portion 285a, a flange portion 285b, and a terminal 285c. Here, the inner diameter of recessed portion 282a is larger than the outer diameter of flange portion 285b, and the inner diameter of through-hole 283a is larger than the outer diameter of shaft portion 285a, so that socket 285 is configured to be movable in the horizontal direction. On the other hand, the outer diameter of flange portion 285b is larger than the inner diameter of through-hole 283a, so that up-and-down movement of socket 285 is limited.

[0039] The cylindrical member 284 is disposed between the lower plate member 282 and the water-cooled flange 30. A connector 287 is disposed below the cylindrical member 284. An electrode pin 288 is connected to the connector 287. The terminal 285c and the connector 287 are connected by a flexible stranded wire 286.

[0040] As described above, according to the stage 40, the electrostatic chuck 10 can be easily removed from the stand 20 (shaft 21) by removing the bolts 25. In addition, the connection of the heat transfer gas path (the engagement between the nozzle insertion portion 16 and the nozzle 62) and the connection of the electrical path (the connection between the contact pins 14 and the socket 285) can be easily released. Furthermore, when attaching the electrostatic chuck 10 to the stand 20 (shaft 21), the attachment can be easily performed by fastening with the bolts 25. In addition, the connection of the heat transfer gas path (the engagement between the nozzle insertion portion 16 and the nozzle 62) and the connection of the electrical path (the connection between the contact pins 14 and the socket 285) can be easily performed.

[0041] Furthermore, when replacing the electrostatic chuck 10 from the stage 40 in the chamber 90, the lid 91 of the chamber 90 can be removed, and the bolts 25 and the electrostatic chuck 10 can be attached and detached through an opening at the top of the container 92. This improves the workability when performing maintenance on the electrostatic chuck 10. Furthermore, when replacing the electrostatic chuck 10, it is not necessary to perform the work from the side or below the chamber 90, and therefore the work space can be reduced.

[0042] Furthermore, even if the stage 40 thermally expands and a difference in thermal expansion occurs between the components, the occurrence of thermal stress can be suppressed by sliding at the interface between the electrostatic chuck 10 and the annular member 22 and the interface between the annular member 22 and the heat insulating member 23.

[0043] Furthermore, the socket 285 is supported so as to be movable in the horizontal direction, and a terminal 285c of the socket 285 and a connector 287 are connected by a twisted wire 286. This makes it possible to absorb misalignment of the contact pin 14. Therefore, when the contact pin 14 is inserted into the socket 285, it is possible to suppress a load from being applied to the electrostatic chuck 10.

[0044] Although the mounting table and the substrate processing apparatus have been described above using the above-mentioned embodiments, the mounting table and the substrate processing apparatus according to the present invention are not limited to the above-mentioned embodiments, and various modifications and improvements are possible within the scope of the present invention. The features described in the above-mentioned embodiments can be combined within a range that does not contradict each other.

[0045] The substrate processing apparatus according to the present invention may be a plasma processing apparatus that generates plasma in a processing space to process a substrate, and any of the following types of plasma processing apparatuses may be used: Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna, Electron Cyclotron Resonance Plasma (ECR), and Helicon Wave Plasma (HWP). [Explanation of symbols]

[0046] 1. Substrate processing equipment 10 Electrostatic chuck (dielectric plate) 11 Substrate placement section 12 Outer periphery 13 Through hole 14 contact pins 15 Heater 16 Nozzle insertion part 17 Gas flow path 20 Stand 21 Shaft (support member) 22 Circular member 23 Heat Insulation Materials (Part 2 Heat insulating material) 24. Pressurizing member (No. 2 biasing member) 25 Bolts (fastening members) 26 Heat Insulation Materials (Part 1 Heat insulating material) 27. Pressurizing member (No. 1 biasing member) 28 Contacts 212 Horiguchibe (No. 2 Excavated section) 213 female thread hole 214 Horiguchibe (No. 1 Excavated section) 215 holes 221 Annular part 222 Through hole 223 Nozzle Guide 224 holes 281 Column members 282 Lower plate member 282a Excavation section 283 Upper Plate Member 283a Through hole 284 Cylinder parts 285 sockets 285a Shaft 285b flange 285c terminal 286 Stranded Wire 287 Connector 288 Electrode Pins 30 Water cooling flange 40 Stage (mounting table) 90 Chamber 91 Lid 92 Container

Claims

1. a dielectric plate having a substrate placement portion on which a substrate is placed and a gas flow path communicating with the substrate placement portion; a gas supply unit connected to the gas flow path of the dielectric plate; a support member provided with a recessed portion; a heat insulating member disposed between the dielectric plate and the support member; a biasing member disposed between the heat insulating member and the support member, the gas supply unit has a nozzle connected to the gas flow path of the dielectric plate, The recessed portion provided in the support member includes a first recessed portion, the heat insulating member includes a first heat insulating member disposed between the nozzle and the support member, The biasing member includes a first biasing member, the first biasing member is disposed between the first heat insulating member and the support member, The first recessed portion is provided with lower end sides of the first biasing member and the first heat insulating member. Mounting stand.

2. The recessed portion provided in the support member includes a second recessed portion, the heat insulating member has a second heat insulating member, The biasing member has a second biasing member, the second biasing member is disposed between the second heat insulating member and the support member, The second recessed portion is provided with lower end sides of the second biasing member and the second heat insulating member. The stage according to claim 1 .

3. a fastening member that is inserted through the dielectric plate, the second heat insulating member, and the second biasing member and is detachably fixed to the support member; The stage according to claim 2 .

4. the dielectric plate has a nozzle insertion portion on a rear surface side into which the nozzle is inserted, the nozzle insert is in communication with the gas flow path; The stage according to any one of claims 1 to 3.

5. the dielectric plate has a first through hole formed in an outer periphery thereof; the fastening member is inserted through the first through hole of the dielectric plate; The stage according to claim 3 .

6. a circular member disposed between the dielectric plate and the support member, the circular member having a second through hole formed therein; The fastening member is inserted through the second through hole of the annular member. The stage according to claim 5 .

7. further comprising a circular member disposed between the dielectric plate and the support member; the annular member has a nozzle guide that guides the nozzle to the nozzle insertion portion; The stage according to claim 4 .

8. an inner diameter of the first through hole of the dielectric plate is larger than an outer diameter of the fastening member to be inserted into the first through hole; The stage according to claim 5 .

9. the dielectric plate has contact pins; The socket that connects with the contact pin is supported so as to be movable in the horizontal direction. The stage according to any one of claims 1 to 8.

10. The mounting table according to any one of claims 1 to 9, a chamber that accommodates the mounting table.

11. The chamber has a container that opens upward and a lid that closes the opening of the container. The substrate processing apparatus according to claim 10 .

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