Semiconductor manufacturing equipment and semiconductor device manufacturing method

Abstract

To provide a technique capable of improving the uniformity of electric field strength in plasma.SOLUTION: A semiconductor manufacturing apparatus includes: a processing container that houses substrate holders that hold a plurality of substrates in a shelf shape; a gas supply unit that supplies a processing gas into the processing container; and a microwave introduction portion that generates plasma from the processing gas. The microwave introduction portion includes: a rectangular waveguide provided along the longitudinal direction of the processing container and having a plurality of slots for radiating microwaves; and a phase controller provided at the terminal end of the rectangular waveguide and controlling the phase of the microwave propagating in the rectangular waveguide.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor manufacturing apparatus and a method for manufacturing a semiconductor device. [Background technology]

[0002] A batch-type substrate processing apparatus equipped with an inductively coupled plasma source is known (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-93226 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can improve the uniformity of the electric field strength in plasma. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, there is provided a semiconductor manufacturing apparatus including: a processing vessel that accommodates a substrate holder that holds a plurality of substrates in a shelf-like manner; a gas supply unit that supplies a processing gas into the processing vessel; and a microwave introduction unit that generates plasma from the processing gas. A control unit; The microwave introduction part includes a rectangular waveguide having a plurality of slots that are provided along the longitudinal direction of the processing vessel and radiate microwaves, and a microwave guide provided at an end of the rectangular waveguide that propagates within the rectangular waveguide. The aforementioned A phase controller that controls the phase of the microwave. death , The phase controller has a coaxial waveguide connected to the end and a waveguide having a length λg in the axial direction of the coaxial waveguide. 2 / 2(λg 2 a pair of dielectric members arranged at an interval of a wavelength of the microwave in the coaxial waveguide and movable in the axial direction of the waveguide, and the control unit controls the gas supply unit and the microwave introduction unit to introduce the microwave while moving the pair of dielectric members and generate the plasma from the processing gas. . [Effects of the Invention]

[0006] According to the present disclosure, the uniformity of the electric field strength in the plasma can be improved. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a perspective view showing an example of a semiconductor manufacturing apparatus according to an embodiment; [Figure 2] FIG. 1 is a vertical cross-sectional view showing an example of a semiconductor manufacturing apparatus according to an embodiment; [Figure 3] FIG. 1 is a cross-sectional view showing an example of a semiconductor manufacturing apparatus according to an embodiment. [Figure 4] A longitudinal cross-sectional view showing an example of a microwave introduction section. [Figure 5] A perspective view illustrating a slot [Figure 6] A perspective view illustrating a phase controller [Figure 7] Figure (1) shows the analysis results of the electric field strength distribution in the surface wave plasma in the example. [Figure 8] Figure (2) shows the analysis results of the electric field strength distribution in the surface wave plasma in the example. [Figure 9] FIG. 10 is a diagram showing the analysis results of the electric field strength distribution in surface wave plasma in a comparative example. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, the same or corresponding reference numerals are used to designate the same or corresponding members or components, and redundant descriptions will be omitted.

[0009] [Semiconductor manufacturing equipment] An example of a semiconductor manufacturing apparatus according to an embodiment will be described with reference to FIGS. 1 to 6. FIG. 1 is a perspective view showing an example of a semiconductor manufacturing apparatus according to an embodiment. FIG. 2 is a longitudinal sectional view showing an example of a semiconductor manufacturing apparatus according to an embodiment. FIG. 3 is a transverse sectional view showing an example of a semiconductor manufacturing apparatus according to an embodiment, which is a sectional view taken along the line AA in FIG. 2. FIG. 4 is a longitudinal sectional view showing an example of a microwave introduction section, which is a sectional view taken along the line BB in FIG. 3. FIG. 5 is a perspective view illustrating a slot. FIG. 6 is a perspective view illustrating a phase controller, which is an enlarged view of a portion of the microwave introduction section.

[0010] The semiconductor manufacturing apparatus 1 of the embodiment is a batch type apparatus that simultaneously processes a plurality of substrates W. The semiconductor manufacturing apparatus 1 includes a processing vessel 10, a gas supply unit 30, a microwave introduction unit 40, an exhaust unit 50, a heating unit 60, and a control unit 90.

[0011] The processing vessel 10 has a cylindrical shape with a ceiling and an open bottom end, with the vertical direction as the longitudinal direction. The processing vessel 10 accommodates a substrate holder 14, which will be described later. The processing vessel 10 is made of, for example, quartz. A ceiling plate 11 is provided near the upper end of the processing vessel 10. The area below the ceiling plate 11 is sealed. The ceiling plate 11 is made of, for example, quartz. A cylindrical metal manifold 12 is connected to the opening at the lower end of the processing vessel 10 via a sealing member 13, such as an O-ring.

[0012] The manifold 12 supports the lower end of the processing vessel 10. A substrate holder 14 is inserted into the processing vessel 10 from below the manifold 12.

[0013] The substrate holder 14 holds multiple substrates W (e.g., 25 to 150 substrates W) substantially horizontally at predetermined intervals in the vertical direction. That is, the substrate holder 14 holds the multiple substrates W in a shelf-like manner. The substrates W are, for example, semiconductor wafers. The substrate holder 14 is made of, for example, quartz. The substrate holder 14 has three support posts 15. The substrate holder 14 supports the multiple substrates W by grooves (not shown) formed in the support posts 15. The substrate holder 14 is placed on a table 17 via a heat-retaining tube 16 made of quartz. The heat-retaining tube 16 prevents a temperature drop inside the processing vessel 10 due to heat radiation from the lower side of the processing vessel 10. The table 17 is supported on a rotating shaft 18. The rotating shaft 18 penetrates a metal (e.g., stainless steel) lid 19 that opens and closes an opening at the lower end of the manifold 12.

[0014] A magnetic fluid seal 20 is provided at the penetration portion of the rotating shaft 18. The magnetic fluid seal 20 airtightly seals the rotating shaft 18 and rotatably supports the rotating shaft 18. A seal member 21 such as an O-ring is provided between the periphery of the lid 19 and the lower end of the manifold 12 to maintain airtightness inside the processing vessel 10. The rotating shaft 18 is attached to the tip of an arm 22 supported by an elevation mechanism (not shown) such as a boat elevator. When the arm 22 moves up and down, the substrate holder 14 and the lid 19 move up and down together to be inserted into and removed from the processing vessel 10.

[0015] The gas supply unit 30 has gas nozzles 31 to 33. The gas nozzles 31 to 33 are made of, for example, quartz.

[0016] The gas nozzle 31 penetrates the sidewall of the manifold 12 inward, bends upward, and extends vertically. The base end of the gas nozzle 31 is located outside the processing vessel 10 and is connected to a gas source GS1 via a gas pipe GP1. A flow rate controller MFC1 and an on-off valve V1 are installed in the gas pipe GP1. The vertical portion of the gas nozzle 31 is located inside the processing vessel 10. The vertical portion of the gas nozzle 31 has multiple gas holes 31h formed at predetermined intervals along a vertical length corresponding to the substrate support range of the substrate holder 14. The gas nozzle 31 horizontally discharges a first process gas, which is introduced from the gas source GS1 via the gas pipe GP1, into the processing vessel 10 through the multiple gas holes 31h. The first process gas is, for example, a source gas such as a silicon-containing gas or a metal-containing gas.

[0017] The gas nozzle 32 penetrates the sidewall of the manifold 12 inward, bends upward, and extends vertically. The base end of the gas nozzle 32 is located outside the processing chamber 10 and is connected to a gas source GS2 via a gas pipe GP2. A flow rate controller MFC2 and an on-off valve V2 are installed in the gas pipe GP2. The vertical portion of the gas nozzle 32 is located in a plasma generation space P (described later). The vertical portion of the gas nozzle 32 has a plurality of gas holes 32h formed at predetermined intervals along a length in the vertical direction corresponding to the substrate support range of the substrate holder 14. The gas nozzle 32 horizontally discharges a second process gas, which is introduced from the gas source GS2 via the gas pipe GP2, from the plurality of gas holes 32h into the plasma generation space P. The second process gas is, for example, an oxidizing gas or a nitriding gas.

[0018] The gas nozzle 33 extends horizontally, penetrating the sidewall of the manifold 12 inward. The base end of the gas nozzle 33 is located outside the processing vessel 10 and connected to a gas source GS3 via a gas pipe GP3. A flow rate controller MFC3 and an on-off valve V3 are installed in the gas pipe GP3. The tip of the gas nozzle 33 is located inside the processing vessel 10 and opens. The gas nozzle 33 horizontally discharges a third processing gas, which is introduced from the gas source GS3 via the gas pipe GP3, into the processing vessel 10 from the open tip. The third processing gas is an inert gas, such as argon gas or nitrogen gas.

[0019] Although the gas supply unit 30 has been described as having three gas nozzles 31 to 33, the number of gas nozzles is not limited. For example, the number of gas nozzles may be one, two, or four or more. Furthermore, the types of gas supplied from the gas nozzles 31 to 33 are not limited to those exemplified.

[0020] The microwave introduction part 40 is provided in a part of the side wall of the processing vessel 10. The microwave introduction part 40 introduces microwaves into a plasma generation space P (described later) to generate surface wave plasma from a second processing gas discharged by a gas nozzle 32 in the plasma generation space P. Reactive species such as radicals in the surface wave plasma generated in the plasma generation space P are supplied into the processing vessel 10. The microwave introduction part 40 includes a plasma partition wall 41, a transmission plate 42, a rectangular waveguide 43, a phase controller 44, and a microwave generator 45.

[0021] The plasma compartment wall 41 is hermetically welded to the outer wall of the processing vessel 10. The plasma compartment wall 41 has a concave cross section and is provided to cover an opening 10a formed in the side wall of the processing vessel 10. The opening 10a is elongated in the vertical direction so as to cover all of the substrates W supported by the substrate holder 14 in the vertical direction. The plasma compartment wall 41 forms a space (hereinafter referred to as the "plasma generation space P") that communicates with the inside of the processing vessel 10. The plasma compartment wall 41 supplies reactive species such as radicals from the plasma generation space P into the processing vessel 10. A gas nozzle 32 is disposed in the plasma generation space P. An inlet 41a is formed on one side of the plasma compartment wall 41. Like the opening 10a, the inlet 41a is elongated in the vertical direction so as to cover all of the substrates W supported by the substrate holder 14 in the vertical direction. The plasma compartment wall 41 is formed of a metal material such as aluminum, stainless steel, or Inconel (registered trademark).

[0022] The transmission plate 42 is slightly larger than the inlet 41a. The transmission plate 42 is attached to one side of the plasma compartment wall 41 so as to close the inlet 41a. The space between the plasma compartment wall 41 and the transmission plate 42 is airtightly sealed with a sealing member (not shown) such as an O-ring. This keeps the plasma generation space P airtight. The transmission plate 42 is made of a material that transmits microwaves, such as a dielectric material such as Al2O3, AlN, or quartz.

[0023] The rectangular waveguide 43 is provided on one side of the plasma partition wall 41, sandwiching a transmission plate 42. The rectangular waveguide 43 extends in the vertical direction. That is, the tube axis of the rectangular waveguide 43 is parallel to the vertical direction. The lower end (starting end) of the rectangular waveguide 43 is connected to a microwave generator 45, and the upper end (terminating end) is connected to a phase controller 44. The rectangular waveguide 43 is preferably an inner-axis rectangular waveguide having a first inner conductor 43a and a first outer conductor 43b disposed around the first inner conductor 43a. Since an inner-axis rectangular waveguide has no cutoff frequency, the dimensions of the waveguide can be reduced. The rectangular waveguide 43 is formed of a metal material such as aluminum, stainless steel, or Inconel (registered trademark). The rectangular waveguide 43 has multiple rectangular slots 43s for radiating microwaves.

[0024] The multiple slots 43s are formed through the wall of the rectangular waveguide 43 on the transmission plate 42 side. The length L1 of each slot 43s is preferably half the wavelength (λg1) of the microwaves in the rectangular waveguide 43, i.e., λg1 / 2. This allows the microwaves to be efficiently radiated from the rectangular waveguide 43 into the plasma generation space P. Each slot 43s is preferably inclined at a predetermined angle θ toward the tube axis direction with respect to the horizontal direction. This allows the length L1 of each slot 43s to be set to or close to λg1 / 2, and shortens the horizontal length of the wall of the rectangular waveguide 43 on the transmission plate 42 side. The predetermined angle θ may be, for example, 45°. The width L2 of each slot 43s is determined depending on the wavelength of the microwaves in the rectangular waveguide 43 and the material of the transmission plate 42. The width L2 of each slot 43s may be a value smaller than λg1 / 2, for example, 10 mm. The arrangement interval L3 of the slots 43s may be a value smaller than λg1 / 2, for example, the same value as the width L2 of the slots 43s. By making the arrangement interval L3 of the slots 43s smaller than λg1 / 2, the positions of peaks and valleys of the electric field strength in the surface wave plasma generated in the plasma generation space P can be increased.

[0025] The phase controller 44 controls the phase of the microwave propagating within the rectangular waveguide 43. The phase controller 44 has a coaxial waveguide 441 and a pair of dielectric members 442.

[0026] The coaxial waveguide 441 is connected to the upper end of the rectangular waveguide 43. The coaxial waveguide 441 is bent downward from the upper end of the rectangular waveguide 43 and extends vertically. The vertical portion of the coaxial waveguide 441 is, for example, parallel to the rectangular waveguide 43, and its length is, for example, approximately the same as the length of the rectangular waveguide 43. The coaxial waveguide 441 has a second inner conductor 441a and a second outer conductor 441b provided around the second inner conductor 441a. Since a coaxial waveguide does not have a cutoff frequency, the dimensions of the waveguide can be reduced. For example, the second inner conductor 441a and the second outer conductor 441b are arranged concentrically. The second inner conductor 441a is connected to the first inner conductor 43a, and the second outer conductor 441b is connected to the first outer conductor 43b.

[0027] The pair of dielectric members 442 are provided in the coaxial waveguide 441 with a gap of λg2 / 2 between them in the vertical direction. λg2 is the wavelength of microwaves in the coaxial waveguide 441. The pair of dielectric members 442 are configured to be movable in the vertical direction while maintaining the gap of λg2 / 2. The pair of dielectric members 442 are configured to reciprocate over a distance of, for example, λg2 / 2×n (n: natural number). Each dielectric member 442 has an annular plate shape with its axial direction extending in the vertical direction. Each dielectric member 442 has, for example, an axial length (thickness) of λg2 / 4, an inner diameter that is approximately the same as the outer diameter of the second inner conductor 441a, and an outer diameter that is approximately the same as the inner diameter of the second outer conductor 441b. Each dielectric member 442 is formed of a dielectric material such as Al2O3 or AlN.

[0028] The microwave generator 45 generates microwaves. The microwave generator 45 supplies the generated microwaves to the rectangular waveguide 43. The frequency of the microwaves is preferably 1 GHz or less in order to suppress attenuation of the microwaves within the rectangular waveguide 43. The frequency of the microwaves is preferably 800 MHz or more in order to shorten the length of the slot 43s and reduce the size of the waveguide and peripheral components.

[0029] The microwave introduction section 40 transmits microwaves generated by a microwave generator 45 to a rectangular waveguide 43, controls the phase using a phase controller 44, and introduces the microwaves into a plasma generation space P through multiple slots 43s and a transmission plate 42.

[0030] The exhaust unit 50 includes an exhaust port 51, a cover member 52, an exhaust pipe 53, a pressure control valve 54, and an exhaust device 55. The exhaust port 51 is provided in a sidewall portion of the processing vessel 10 facing the opening 10a. The exhaust port 51 is elongated in the vertical direction corresponding to the substrate holder 14. The cover member 52 is attached to a portion of the processing vessel 10 corresponding to the exhaust port 51 so as to cover the exhaust port 51. The cover member 52 has a U-shaped cross section and extends vertically along the sidewall of the processing vessel 10. The exhaust pipe 53 is connected to a lower portion of the cover member 52. The pressure control valve 54 is provided in the exhaust pipe 53. The pressure control valve 54 controls the pressure inside the processing vessel 10. The exhaust device 55 is provided in the exhaust pipe 53. The exhaust device 55 includes a vacuum pump, etc. The exhaust unit 50 evacuates the processing vessel 10 via the exhaust port 51 and the exhaust pipe 53 using the exhaust device 55.

[0031] The heating unit 60 has a cylindrical shape and is provided around the processing vessel 10. The heating unit 60 includes, for example, a heater and a heat insulating member. The heating unit 60 heats the substrate W in the processing vessel 10 with the heater.

[0032] The control unit 90 controls each part of the semiconductor manufacturing apparatus 1. For example, the control unit 90 controls the gas supply unit 30 and the microwave introduction unit 40 so that microwaves are introduced into the plasma generation space P while moving the pair of dielectric members 442, thereby generating surface wave plasma from the second process gas discharged by the gas nozzle 32. As a result, the phase of the reflected microwave wave relative to the incident microwave wave in the rectangular waveguide 43 shifts over time, and the positions of the antinodes and nodes of the standing wave of the microwave in the rectangular waveguide 43 change over time. As a result, the positions of the peaks and valleys of the electric field strength in the vertical direction in the surface wave plasma generated in the plasma generation space P change over time, thereby improving the uniformity of the time-averaged distribution of the electric field strength in the vertical direction in the surface wave plasma.

[0033] The control unit 90 may be, for example, a computer. A computer program that controls the operation of each unit of the semiconductor manufacturing apparatus 1 is stored in a storage medium. The storage medium may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like.

[0034] [Method for manufacturing semiconductor device] A description will be given of an example of a semiconductor device manufacturing method carried out by the semiconductor manufacturing apparatus 1. The following description will be given taking as an example a case where a silicon nitride film is formed by atomic layer deposition (ALD) using a silicon-containing gas as a first process gas, a nitriding gas as a second process gas, and a nitrogen gas as a third process gas.

[0035] First, the inside of the processing vessel 10 is adjusted to a predetermined temperature, and the substrate holder 14 carrying a plurality of substrates W is loaded into the processing vessel 10. Next, the inside of the processing vessel 10 is evacuated by the exhaust device 55, while the inside of the processing vessel 10 is adjusted to a predetermined pressure.

[0036] Subsequently, the adsorption step, the first purge step, the nitriding step, and the second purge step are repeated a predetermined number of times to form a silicon nitride film having a predetermined thickness.

[0037] In the adsorption step, a silicon-containing gas is supplied into the processing chamber 10 through the gas nozzle 31. As a result, the silicon-containing gas is adsorbed onto the surface of the substrate W.

[0038] In the first purge step, nitrogen gas is supplied into the processing vessel 10 from the gas nozzle 33 while the processing vessel 10 is evacuated by the exhaust device 55. This causes the silicon-containing gas remaining in the processing vessel 10 to be discharged, and the atmosphere in the processing vessel 10 is replaced with nitrogen gas.

[0039] In the nitriding process, nitriding gas is supplied to the plasma generation space P from the gas nozzle 32, and microwaves are introduced into the plasma generation space P through the microwave introducing unit 40. As a result, surface wave plasma is generated from the nitriding gas in the plasma generation space P, and reactive species such as radicals in the surface wave plasma are supplied into the processing vessel 10. At this time, the phase of the microwave propagating through the rectangular waveguide 43 is controlled by reciprocating the pair of dielectric members 442 over a distance of λg2 / 2×n (n: natural number) while maintaining a gap of λg2 / 2. As a result, the phase of the reflected microwave wave relative to the incident microwave wave in the rectangular waveguide 43 shifts over time, and the positions of the antinodes and nodes of the standing wave of the microwave in the rectangular waveguide 43 change over time. As a result, the positions of the peaks and valleys of the electric field strength in the vertical direction in the surface wave plasma generated in the plasma generation space P change over time, thereby improving the uniformity of the time-averaged distribution of the electric field strength in the vertical direction in the surface wave plasma.

[0040] In the second purging step, nitrogen gas is supplied into the processing vessel 10 from the gas nozzle 33 while the processing vessel 10 is evacuated by the exhaust device 55. This causes the nitriding gas remaining in the processing vessel 10 to be discharged, and the atmosphere inside the processing vessel 10 is replaced with nitrogen gas.

[0041] Subsequently, the substrate holder 14 carrying the plurality of substrates W on which the silicon nitride film has been formed is unloaded from the processing chamber 10, and the processing is completed.

[0042] In the above embodiment, the silicon nitride film is formed by the ALD method, but the present invention is not limited to this. For example, the silicon nitride film may be formed by the chemical vapor deposition (CVD) method. For example, instead of the silicon nitride film, a silicon oxide film, a metal nitride film, or a metal oxide film may be formed.

[0043] 〔effect〕 According to the embodiment, a second processing gas is supplied to the plasma generation space P, and microwaves are introduced to generate surface wave plasma from the second processing gas in the plasma generation space P. This reduces the leakage of high electric field strength portions of the plasma from the plasma generation space P into the processing vessel 10, which is a problem with plasmas such as inductively coupled plasma (ICP), and allows reactive species such as low-energy radicals to be supplied into the processing vessel 10. Furthermore, microwaves have a high generation efficiency of reactive species such as radicals, improving productivity.

[0044] Furthermore, according to the embodiment, microwaves are introduced into the plasma generation space P while moving the pair of dielectric members 442, thereby generating surface wave plasma from the second process gas discharged from the gas nozzle 32. As a result, the phase of the reflected wave relative to the incident wave of the microwave in the rectangular waveguide 43 shifts over time, and therefore the positions of the antinodes and nodes of the standing wave of the microwave in the rectangular waveguide 43 change over time. As a result, the positions of the peaks and valleys of the electric field strength in the vertical direction in the surface wave plasma generated in the plasma generation space P change over time, thereby improving the uniformity of the time-averaged distribution of the electric field strength in the vertical direction in the surface wave plasma.

[0045] [Analysis results] First, we analyzed the effect of controlling the phase of microwaves propagating in the rectangular waveguide 43 when generating surface wave plasma in the plasma generation space P of the semiconductor manufacturing equipment 1 on the distribution of electric field strength in the surface wave plasma. In the analysis, we calculated the distribution of electric field strength in the vertical direction when argon gas was supplied from the gas nozzle 32 to the plasma generation space P and the pair of dielectric members 442 was reciprocated a distance of λg2 / 2 while maintaining the gap of λg2 / 2 (Example). For comparison, we also calculated the distribution of electric field strength in the vertical direction when argon gas was supplied from the gas nozzle 32 to the plasma generation space P and the pair of dielectric members 442 was fixed without moving (Comparative Example).

[0046] Fig. 7 is a diagram showing the analysis results of the electric field strength distribution in the surface wave plasma in the example, showing the electric field strength distribution in the surface wave plasma at multiple times when the positions of the pair of dielectric members 442 are different. In Fig. 7, the horizontal axis represents the position [mm] in the vertical direction, with 0 mm being the upper end of the plasma partition wall 41 and 900 mm being the lower end of the plasma partition wall 41. In Fig. 7, the vertical axis represents the electric field strength [V / m]. In Fig. 7, the electric field strength in the surface wave plasma when the positions of the pair of dielectric members 442 are different is shown by different line types.

[0047] As shown in Figure 7, when a pair of dielectric members 442 are moved back and forth over a distance of λg2 / 2 while maintaining a gap of λg2 / 2, the positions of the peaks and valleys of the electric field strength along the vertical direction in the surface wave plasma generated in the plasma generation space P change.

[0048] Figure 8 shows the results of analyzing the electric field strength distribution in the surface wave plasma in this example, and shows the result of integrating the spectra of the multiple electric field strengths shown in Figure 7. In Figure 8, the horizontal axis represents the position [mm] in the vertical direction, with 0 mm being the upper end of the plasma partition wall 41 and 900 mm being the lower end of the plasma partition wall 41. In Figure 8, the vertical axis represents the electric field strength [V / m].

[0049] As shown in Fig. 8, it can be seen that the integrated value of the electric field strength is approximately constant in the position range of 150 mm to 750 mm. This is thought to be because the positions of the peaks and valleys of the electric field strength along the vertical direction in the surface wave plasma generated in the plasma generation space P change over time, as shown in Fig. 7.

[0050] 9 is a diagram showing the results of analyzing the electric field strength distribution in surface wave plasma in a comparative example, and shows the results of integrating multiple electric field strength spectra in surface wave plasma at multiple points in time with the positions of the pair of dielectric members 442 fixed. In Fig. 9, the horizontal axis represents the position [mm] in the vertical direction, with 0 mm being the upper end of the plasma partition wall 41 and 900 mm being the lower end of the plasma partition wall 41. In Fig. 9, the vertical axis represents the electric field strength [V / m].

[0051] 9, it can be seen that the integrated value of the electric field strength changes in a wavy manner in the position range of 150 mm to 750 mm. This is thought to be because the positions of the peaks and valleys of the electric field strength along the vertical direction in the surface wave plasma generated in the plasma generation space P do not change over time.

[0052] Next, we analyzed the effect that controlling the phase of microwaves propagating inside the rectangular waveguide 43 has on the power absorption efficiency of surface wave plasma when generating surface wave plasma in the plasma generation space P of the semiconductor manufacturing equipment 1. In the analysis, we calculated the reflectivity of microwaves at the inlet of the rectangular waveguide 43 when argon gas was supplied from the gas nozzle 32 to the plasma generation space P and the pair of dielectric members 442 was reciprocated over a distance of λg2 / 2 while maintaining the gap of λg2 / 2.

[0053] As a result of the analysis, it was confirmed that when the pair of dielectric members 442 were reciprocated over a distance of λg2 / 2 while maintaining the gap of λg2 / 2, the reflectivity of the microwave at the entrance of the rectangular waveguide 43 was approximately stable at 0.6. This result showed that even when the pair of dielectric members 442 were reciprocated over a distance of λg2 / 2 while maintaining the gap of λg2 / 2, there was almost no effect on the power absorption efficiency of the surface wave plasma.

[0054] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0055] 1. Semiconductor manufacturing equipment 10 Processing container 14 Board holder 30 Gas supply unit 40 Microwave introduction section 43 Square waveguide 43s Slot 44 Phase Controller W substrate

Claims

1. a processing vessel containing a substrate holder that holds a plurality of substrates in a shelf-like manner; a gas supply unit that supplies a processing gas into the processing vessel; a microwave introduction section for generating plasma from the processing gas; A control unit; Equipped with The microwave introduction section a rectangular waveguide having a plurality of slots that are provided along the longitudinal direction of the processing vessel and that radiates microwaves; a phase controller provided at an end of the rectangular waveguide and configured to control the phase of the microwave propagating within the rectangular waveguide; and The phase controller a coaxial waveguide connected to the end; a pair of dielectric members disposed in the coaxial waveguide at an interval of λg 2 / 2 (λg 2 : wavelength of the microwave in the coaxial waveguide) in the axial direction of the coaxial waveguide and movable in the axial direction; Including, the control unit controls the gas supply unit and the microwave introduction unit to introduce the microwave while moving the pair of dielectric members and generate the plasma from the processing gas. Semiconductor manufacturing equipment.

2. Each of the pair of dielectric members has an axial direction in the tube axis direction and a thickness λg ２ / 4, The semiconductor manufacturing apparatus according to claim 1 .

3. The pair of dielectric members has a width λg along the tube axis direction. ２ / 2×n (n: natural number) distance, 3. The semiconductor manufacturing apparatus according to claim 1 or 2.

4. The rectangular waveguide is a rectangular waveguide with an inner axis. The semiconductor manufacturing apparatus according to any one of claims 1 to 3.

5. each of the plurality of slots is inclined toward the tube axis direction of the rectangular waveguide with respect to the horizontal direction; The semiconductor manufacturing apparatus according to any one of claims 1 to 4.

6. An opening is formed in a sidewall of the processing vessel, The microwave introduction section a plasma compartment wall covering the opening, the plasma compartment wall having an inlet formed therein for introducing the microwaves radiated from the plurality of slots into the plasma compartment wall; a transmission plate provided between the rectangular waveguide and the plasma partition wall, which transmits the microwave; having The semiconductor manufacturing apparatus according to any one of claims 1 to 5.

7. The gas supply unit has a gas nozzle provided in the plasma compartment wall. The semiconductor manufacturing apparatus according to claim 6 .

8. a step of accommodating a substrate holder that holds a plurality of substrates in a shelf-like manner in a processing vessel; supplying a processing gas into the processing chamber; introducing microwaves to generate plasma from the processing gas; and the step of generating the plasma includes controlling a phase of the microwave propagating within a rectangular waveguide by a phase controller provided at an end of the rectangular waveguide, the rectangular waveguide having a plurality of slots that are provided along a longitudinal direction of the processing vessel and that radiates the microwave; The phase controller a coaxial waveguide connected to the end; a pair of dielectric members disposed in the coaxial waveguide at an interval of λg 2 / 2 (λg 2 : wavelength of the microwave in the coaxial waveguide) in the axial direction of the coaxial waveguide and movable in the axial direction; Including, the step of generating the plasma includes introducing the microwave while moving the pair of dielectric members to generate the plasma from the processing gas. A method for manufacturing a semiconductor device.

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