Vacuum processing apparatus and method for controlling the vacuum processing apparatus

Abstract

To improve displacement of a position and change of an inclination of a mounting stand which are caused by deformation of a processing container.SOLUTION: A vacuum processing device includes: a processing container which can maintain a vacuum atmosphere therein; a mounting stand which is provided in the processing container and on which a substrate is placed; a support member which penetrates through a hole of a bottom part of the processing container to support the mounting stand from below; a base member which is engaged with an end part of the support member located outside the processing container to be movable integrally with the mounting stand; and actuators which are provided parallel to each other between the bottom part of the processing container and the base member and move the base member relative to the bottom part of the processing container to adjust a position and an inclination of the mounting stand.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present disclosure relates to a vacuum processing apparatus and a method for controlling the vacuum processing apparatus. [Background technology]

[0002] Patent Document 1 discloses a structure in which an adjustment plate for adjusting the inclination of a mounting table on which a substrate is placed is placed below the bottom of a processing vessel, and the bottom of the processing vessel and the adjustment plate are fastened together with bolts. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2001-230307 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique capable of improving deviations in the position and inclination of a mounting table caused by deformation of a processing vessel. [Means for solving the problem]

[0005] A vacuum processing apparatus according to one aspect of the present disclosure includes a processing vessel capable of maintaining a vacuum atmosphere inside, a mounting stage provided within the processing vessel on which a substrate is placed, a support member that passes through a hole in the bottom of the processing vessel and supports the mounting stage from below, a base member that engages with an end of the support member located outside the processing vessel and is movable integrally with the mounting stage, and a plurality of actuators that are provided in parallel with each other between the bottom of the processing vessel and the base member and that adjust the position and inclination of the mounting stage by moving the base member relative to the bottom of the processing vessel. [Effects of the Invention]

[0006] According to the present disclosure, it is possible to improve the position and tilt of the mounting table caused by deformation of the processing vessel. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic plan view showing an example of the configuration of a vacuum processing system according to an embodiment. [Figure 2] FIG. 2 is an exploded perspective view showing an example of the configuration of the vacuum processing apparatus according to the embodiment. [Figure 3] FIG. 3 is a plan view schematically showing the internal configuration of the vacuum processing apparatus according to the embodiment. [Figure 4] FIG. 4 is a schematic cross-sectional view showing an example of the configuration of a vacuum processing apparatus according to the embodiment. [Figure 5] FIG. 5 is a diagram illustrating an example of the configuration of the rotation drive mechanism and the adjustment mechanism according to the embodiment. [Figure 6] FIG. 6 is a diagram illustrating an example of the configuration of the absorption mechanism shown in FIG. [Figure 7] FIG. 7 is a flowchart showing a first example of the flow of a method for controlling a vacuum processing apparatus according to an embodiment. [Figure 8] FIG. 8 is a flowchart showing a second example of the flow of the method for controlling the vacuum processing apparatus according to the embodiment. [Figure 9] FIG. 9 is a flowchart showing a third example of the flow of the method for controlling the vacuum processing apparatus according to the embodiment. [Figure 10] FIG. 10 is a flowchart showing a fourth example of the flow of the method for controlling the vacuum processing apparatus according to the embodiment. [Figure 11] FIG. 11 is a flowchart showing a fifth example of the flow of the method for controlling the vacuum processing apparatus according to the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of a vacuum processing apparatus and a method for controlling a vacuum processing apparatus disclosed herein will be described in detail with reference to the drawings. Note that the disclosed vacuum processing apparatus and method for controlling a vacuum processing apparatus are not limited to the following embodiments.

[0009] The processing vessel of a vacuum processing apparatus deforms due to a pressure difference when the internal pressure is switched from atmospheric to vacuum. The processing vessel also deforms due to temperature changes. When the processing vessel deforms, stress due to the deformation of the processing vessel is transmitted to the mounting table, which may cause the position and inclination of the mounting table to deviate from the desired position and inclination. For example, in a structure in which an adjustment plate is placed below the bottom of the processing vessel, as in Patent Document 1, the adjustment plate can be moved using bolts to correct the deviation in the inclination of the mounting table due to deformation of the processing vessel, but it is difficult to correct the deviation in the position of the mounting table. Therefore, a technology to correct the deviation in the position and inclination of the mounting table caused by deformation of the processing vessel is desired.

[0010] (Embodiment) [Vacuum processing system configuration] Fig. 1 is a schematic plan view showing an example of the configuration of a vacuum processing system according to an embodiment. Vacuum processing system 1 has a load / unload port 11, a load / unload module 12, a vacuum transfer module 13, and a vacuum processing device 2. In Fig. 1, the X direction is the left-right direction, the Y direction is the front-rear direction, and the Z direction is the up-down direction (height direction), with the load / unload port 11 being the front side in the front-rear direction. The load / unload port 11 is connected to the front side of the load / unload module 12, and the vacuum transfer module 13 is connected to the back side of the load / unload module 12, each facing the front-rear direction.

[0011] A carrier C, which is a transfer container that accommodates a substrate to be processed, is placed in the transfer port 11. The substrate is a wafer W, which is a circular substrate having a diameter of, for example, 300 mm. The transfer module 12 is a module for transferring the wafer W between the carrier C and the vacuum transfer module 13. The transfer module 12 has an atmospheric pressure transfer chamber 121 in which the wafer W is transferred to and from the carrier C in an atmospheric pressure atmosphere by a transfer mechanism 120, and a load lock chamber 122 that switches the atmosphere in which the wafer W is placed between an atmospheric pressure atmosphere and a vacuum atmosphere.

[0012] The vacuum transfer module 13 has a vacuum transfer chamber 14 in which a vacuum atmosphere is formed. A substrate transfer mechanism 15 is disposed inside the vacuum transfer chamber 14. The vacuum transfer chamber 14 is formed, for example, in a rectangular shape with long sides extending along the front-to-rear direction in a plan view. Of the four side walls of the vacuum transfer chamber 14, the opposing long sides of the rectangle are connected to multiple (e.g., three) vacuum processing devices 2. Of the four side walls of the vacuum transfer chamber 14, a load lock chamber 122 installed in the load-unloading module 12 is connected to the short side on the front side. Gate valves G are disposed between the atmospheric pressure transfer chamber 121 and the load lock chamber 122, between the load lock chamber 122 and the vacuum transfer module 13, and between the vacuum transfer module 13 and the vacuum processing device 2. The gate valves G open and close the loading and unloading ports for wafers W provided in each of the modules connected to each other.

[0013] Substrate transfer mechanism 15 transfers wafers W between load / unload module 12 and vacuum processing apparatus 2 in a vacuum atmosphere. Substrate transfer mechanism 15 is made up of an articulated arm and has a substrate holder 16 that holds wafers W. Vacuum processing apparatus 2 performs substrate processing using a processing gas on multiple (e.g., four) wafers W all at once in a vacuum atmosphere. For this reason, substrate holder 16 of substrate transfer mechanism 15 is configured to be able to hold, for example, four wafers W so that four wafers W can be delivered to vacuum processing apparatus 2 all at once.

[0014] Specifically, the substrate transfer mechanism 15 has, for example, a base 151, a first arm 152 extending horizontally, a second arm 153 extending horizontally, and a substrate holder 16. The base side of the first arm 152 is provided on the base 151 and rotates around a vertical rotation axis on the base 151. The base side of the second arm 153 is provided on the tip end of the first arm 152 and rotates around a vertical rotation axis on the tip end of the first arm 152. The substrate holder 16 has a first substrate holder 161, a second substrate holder 162, and a connection part 163. The first substrate holder 161 and the second substrate holder 162 are configured as two elongated spatula-like members extending horizontally in parallel to each other. The connecting portion 163 extends horizontally so as to be perpendicular to the extension direction of the first and second substrate holding portions 161, 162, and connects the base ends of the first and second substrate holding portions 161, 162 to each other. The central portion of the connecting portion 163 in the longitudinal direction is provided on the tip end of the second arm 153, and it rotates around a vertical rotation axis on the tip end of the second arm 153. The first substrate holding portion 161 and the second substrate holding portion 162 will be described later.

[0015] The vacuum processing system 1 has a control unit 8. The control unit 8 is, for example, a computer including a processor, a memory unit, an input device, a display device, etc. The control unit 8 controls each unit of the vacuum processing system 1. The control unit 8 allows an operator to input commands using the input device to manage the vacuum processing system 1. The control unit 8 can also visualize and display the operating status of the vacuum processing system 1 using the display device. Furthermore, the memory unit of the control unit 8 stores a control program for controlling various processes performed in the vacuum processing system 1 by the processor, recipe data, etc. The processor of the control unit 8 executes the control program and controls each unit of the vacuum processing system 1 according to the recipe data, thereby performing the desired substrate processing in the vacuum processing system 1.

[0016] [Configuration of vacuum processing equipment] Next, an example in which the vacuum processing apparatus 2 is applied to a film forming apparatus that performs plasma CVD (Chemical Vapor Deposition) processing on a wafer W will be described with reference to FIGS. 2 to 4. FIG. 2 is an exploded perspective view showing an example of the configuration of the vacuum processing apparatus 2 according to the embodiment. FIG. 3 is a plan view schematically showing the internal configuration of the vacuum processing apparatus 2 according to the embodiment.

[0017] The six vacuum processing apparatuses 2 are configured similarly to one another, and can process wafers W in parallel among the vacuum processing apparatuses 2. The vacuum processing apparatus 2 includes a processing vessel (vacuum vessel) 20 that is rectangular in plan view. The processing vessel 20 is configured to be able to maintain a vacuum atmosphere inside. The processing vessel 20 includes a vessel body 202 having a recessed opening on its upper surface, the opening of which is closed by a ceiling member 201. The processing vessel 20 has, for example, sidewalls 203 that surround the periphery of the processing vessel 20. Of the four sidewalls 203, the sidewall 203 connected to the vacuum transfer chamber 14 has two load / unload ports 21 formed side by side in the front-to-rear direction (Y' direction in FIG. 2). The load / unload ports 21 are opened and closed by a gate valve G.

[0018] As shown in FIGS. 2 and 3, the processing vessel 20 includes a first transfer space T1 and a second transfer space T2, which extend horizontally from the loading / unloading ports 21 and are adjacent to each other and through which wafers W are transferred. An intermediate wall 3 is provided between the first transfer space T1 and the second transfer space T2 in the processing vessel 20 along the extension direction (the X' direction in FIG. 2). Two processing spaces S1 and S2 are arranged in the first transfer space T1 along the extension direction, and two processing spaces S3 and S4 are arranged in the second transfer space T2 along the extension direction. Therefore, a total of four processing spaces S1 to S4 are arranged in a 2x2 matrix when viewed from above within the processing vessel 20. The horizontal direction here includes a slight tilt in the extension direction due to manufacturing tolerances or the like, as long as there is no influence from devices contacting each other during the loading / unloading operation of the wafer W.

[0019] FIG. 4 is a schematic cross-sectional view showing an example of the configuration of a vacuum processing apparatus 2 according to an embodiment. The cross section of FIG. 4 corresponds to the cross section of the vacuum processing apparatus 2 taken along line AA in FIG. 3. The four processing spaces S1 to S4 have the same configuration, and are each formed between a mounting table 22 on which a wafer W is placed and a gas supply unit 4 disposed opposite the mounting table 22. In other words, the mounting table 22 and the gas supply unit 4 are provided for each of the four processing spaces S1 to S4 within the processing vessel 20. FIG. 4 shows the processing space S1 of the first transfer space T1 and the processing space S4 of the second transfer space T2. The following description will be given taking the processing space S1 as an example.

[0020] The mounting table 22, which also serves as the lower electrode, is formed into a flat cylindrical shape and made of, for example, metal or aluminum nitride (AlN) with an embedded metal mesh electrode. The mounting table 22 is supported from below by a support member 23. The support member 23 is cylindrical, extends vertically downward, and penetrates the bottom 27 of the processing vessel 20. The lower end of the support member 23 is located outside the processing vessel 20 and connected to a rotation drive mechanism 600. The support member 23 is rotated by the rotation drive mechanism 600. The mounting table 22 is configured to rotate in response to the rotation of the support member 23. An adjustment mechanism 700 is provided at the lower end of the support member 23, which adjusts the position and inclination of the mounting table 22. The mounting table 22 is configured to be raised and lowered between the processing position and the transfer position via the support member 23 by the adjustment mechanism 700. In FIG. 4, the mounting table 22 at the processing position is depicted by a solid line, and the mounting table 22 at the transfer position is depicted by a dashed line. The processing position is a position where a substrate process (for example, a film formation process) is performed, and the transfer position is a position where the wafer W is transferred to and from the substrate transfer mechanism 15. The rotation drive mechanism 600 and the adjustment mechanism 700 will be described later.

[0021] A heater 24 is embedded in the mounting table 22. The heater 24 heats each wafer W mounted on the mounting table 22 to, for example, about 60° C. to 600° C. The mounting table 22 is connected to a ground potential.

[0022] The mounting table 22 is provided with a plurality of (e.g., three) pin through holes 26a, and a lifter pin 26 is disposed inside each of these pin through holes 26a. The pin through holes 26a are provided to penetrate from the mounting surface (upper surface) of the mounting table 22 to the rear surface (lower surface) opposite the mounting surface. The lifter pins 26 are slidably inserted into the pin through holes 26a. The upper ends of the lifter pins 26 are suspended from the mounting surface side of the pin through holes 26a. That is, the upper ends of the lifter pins 26 have a larger diameter than the pin through holes 26a, and the upper ends of the pin through holes 26a are formed with recesses that are larger in diameter and thickness than the upper ends of the lifter pins 26 and can accommodate the upper ends of the lifter pins 26. As a result, the upper ends of the lifter pins 26 are engaged with the mounting table 22 and suspended from the mounting surface side of the pin through holes 26a. The lower ends of the lifter pins 26 protrude from the rear surface of the mounting table 22 toward the bottom 27 of the processing vessel 20 .

[0023] 4, when the mounting table 22 is raised to the processing position, the upper ends of the lifter pins 26 are housed in the recesses on the mounting side of the pin through holes 26a. When the mounting table 22 is lowered from this state to the transfer position, the lower ends of the lifter pins 26 abut against the bottom 27 of the processing vessel 20, and the lifter pins 26 move within the pin through holes 26a, so that the upper ends of the lifter pins 26 protrude from the mounting surface of the mounting table 22. In this case, the lower ends of the lifter pins 26 may abut against a lifter pin abutment member or the like located on the bottom side, rather than the bottom 27 of the processing vessel 20.

[0024] Here, the first and second substrate holding units 161 and 162 will be described. The first substrate holding unit 161 is configured to hold the wafer W at positions corresponding to the respective positions of the processing spaces S1 and S2 within the first transfer space T1 when the first substrate holding unit 161 is inserted into the first transfer space T1. The positions corresponding to the respective positions of the processing spaces S1 and S2 within the first transfer space T1 are positions set so as to transfer the wafer W to the two mounting tables 22 provided in the processing spaces S1 and S2 of the first transfer space T1. The second substrate holding unit 162 is configured to hold the wafer W at positions corresponding to the respective positions of the processing spaces S3 and S4 within the second transfer space T2 when the second substrate holding unit 162 is inserted into the second transfer space T2. The positions corresponding to the respective positions of the processing spaces S3 and S4 within the second transfer space T2 are positions set so as to transfer the wafer W to the two mounting tables 22 provided in the processing spaces S3 and S4 of the second transfer space T2.

[0025] For example, the first and second substrate holding parts 161, 162 are each formed so that their width is smaller than the diameter of the wafer W, and the rear surface of the wafer W is supported by the first and second substrate holding parts 161, 162 at a distance from each other on the tip and base ends thereof. The wafer W supported on the tip sides of the first and second substrate holding parts 161, 162 has, for example, its central portion supported by the tips of the first and second substrate holding parts 161, 162.

[0026] In this way, the substrate transport mechanism 15, the lifter pins 26, and the mounting tables 22 cooperate to simultaneously transfer, for example, four wafers W between the substrate transport mechanism 15 and each mounting table 22.

[0027] The gas supply unit 4 is provided above the mounting table 22 on the ceiling member 201 of the processing chamber 20 via a guide member 34 made of an insulating member. The gas supply unit 4 functions as an upper electrode. The gas supply unit 4 includes a lid 42, a shower plate 43 that forms an opposing surface facing the mounting surface of the mounting table 22, and a gas flow chamber 44 formed between the lid 42 and the shower plate 43. A gas supply pipe 51 is connected to the lid 42, and gas discharge holes 45 that penetrate the shower plate 43 in the thickness direction are arranged, for example, vertically and horizontally, and gas is discharged toward the mounting table 22 in a shower-like manner.

[0028] Each gas supply unit 4 is connected to a gas supply system 50 via a gas supply pipe 51. The gas supply system 50 includes supply sources of, for example, a reactive gas (film forming gas) which is a processing gas, a purge gas, and a cleaning gas, as well as piping, a valve V, a flow rate adjustment unit M, and the like.

[0029] A high-frequency power supply 41 is connected to the shower plate 43 via a matching box 40. The shower plate 43 functions as an upper electrode facing the mounting table 22. When high-frequency power is applied between the shower plate 43 as the upper electrode and the mounting table 22 as the lower electrode, the gas (reactive gas in this example) supplied from the shower plate 43 to the processing space S1 can be converted into plasma by capacitive coupling.

[0030] Next, the exhaust paths and the confluent exhaust path formed in the middle wall 3 will be described. As shown in Figures 3 and 4, the middle wall 3 is formed with exhaust paths 31 provided for each of the four processing spaces S1 to S4, and a confluent exhaust path 32 where these exhaust paths 31 converge. The confluent exhaust path 32 extends in the vertical direction within the middle wall 3. The middle wall 3 is composed of a wall main body 311 provided on the vessel main body 202 side, and an exhaust path forming member 312 provided on the ceiling member 201 side. The exhaust path 31 is provided inside the exhaust path forming member 312.

[0031] Further, an exhaust port 33 is formed in the wall surface of the intermediate wall 3 located on the outer side of each of the processing spaces S1 to S4 for each of the processing spaces S1 to S4. Each exhaust path 31 is formed in the intermediate wall 3 so as to connect the exhaust port 33 to the confluent exhaust path 32. For example, each exhaust path 31 extends horizontally within the intermediate wall 3, then bends downward to extend vertically and connects to the confluent exhaust path 32. For example, the exhaust path 31 has a circular cross section (see FIG. 3), and the downstream end of each exhaust path 31 is connected to the upstream end of the confluent exhaust path 32. The upstream side of each exhaust path 31 opens to the outside of each of the processing spaces S1 to S4 as an exhaust port 33.

[0032] An exhaust guide member 34 is provided around each of the processing spaces S1 to S4 so as to surround the processing space S1 to S4. The guide member 34 is, for example, an annular body provided to surround the area around the mounting table 22 at the processing position with a gap therebetween. The guide member 34 has, for example, a rectangular cross section therein and is configured to form an annular flow path 35 in a plan view. FIG. 3 schematically shows the processing spaces S1 to S4, the guide member 34, the exhaust path 31, and the confluent exhaust path 32.

[0033] 4, the guide member 34 is formed, for example, in a U-shaped cross section and is disposed with the opening of the U facing downward. The guide member 34 is fitted into recesses 204 formed on the intermediate wall 3 and side wall 203 sides of the container body 202, and forms a flow path 35 between the guide member 34 and the members constituting the intermediate wall 3 and side wall 203.

[0034] The guide member 34 fitted into the recess 204 forms a slit-shaped slit exhaust port 36 that opens toward the processing spaces S1 to S4. In this way, the slit exhaust port 36 is formed along the circumferential direction on the side periphery of each of the processing spaces S1 to S4. The exhaust port 33 is connected to the communication flow path 35, and the processing gas exhausted from the slit exhaust port 36 flows toward the exhaust port 33.

[0035] Focus will be given on a pair of two processing spaces S1 and S2 arranged along the extension direction of the first transfer space T1 and a pair of two processing spaces S3 and S4 arranged along the extension direction of the second transfer space T2. As shown in FIG. 3, the pairs of processing spaces S1-S2 and S3-S4 are arranged with 180° rotational symmetry around the confluent exhaust path 32 when viewed from above.

[0036] As a result, the process gas flow paths from each of the process spaces S1 to S4 to the confluent exhaust path 32 via the slit exhaust ports 36, the flow paths 35 of the guide member 34, the exhaust ports 33, and the exhaust path 31 are formed with 180-degree rotational symmetry around the confluent exhaust path 32. Note that, if we ignore the positional relationships with the first and second transfer spaces T1, T2 and the intermediate wall portion 3 and focus only on the process gas flow paths, it can also be said that these flow paths are formed with 90-degree rotational symmetry around the confluent exhaust path 32 when viewed from above.

[0037] The confluent exhaust path 32 is connected to an exhaust pipe 61 via a confluent exhaust port 205 formed in the bottom 27 of the processing vessel 20. The exhaust pipe 61 is connected to a vacuum pump 62 constituting a vacuum exhaust mechanism via a valve mechanism 7. One vacuum pump 62 is provided for each processing vessel 20, for example (see FIG. 1), and the exhaust pipes 61 downstream of the respective vacuum pumps 62 are joined together and connected to, for example, a factory exhaust system.

[0038] The valve mechanism 7 opens and closes a flow path for the process gas formed inside the exhaust pipe 61, and includes, for example, a casing 71 and an opening / closing unit 72. A first opening 73 connected to the upstream exhaust pipe 61 is formed on the top surface of the casing 71, and a second opening 74 connected to the downstream exhaust pipe 61 is formed on the side surface of the casing 71.

[0039] The opening / closing unit 72 includes, for example, an opening / closing valve 721 sized to close the first opening 73, and an elevating mechanism 722 provided outside the casing 71 and configured to raise and lower the opening / closing valve 721 within the casing 71. The opening / closing valve 721 is configured to be able to freely rise and lower between a closed position shown by a dashed line in FIG. 4 where it closes the first opening 73, and an open position shown by a solid line in FIG. 4 where it is retracted below the first and second openings 73 and 74. When the opening / closing valve 721 is in the closed position, the downstream end of the combined exhaust port 205 is closed, and exhausting of the processing vessel 20 is stopped. When the opening / closing valve 721 is in the open position, the downstream end of the combined exhaust port 205 is opened, and the processing vessel 20 is exhausted.

[0040] Next, the process gas supply system will be described with reference to FIG. 2, taking the case where two types of reactive gases are used as an example. A gas supply pipe 51 is connected to approximately the center of the upper surface of each gas supply unit 4. The gas supply pipe 51 is connected by a first gas supply pipe 511 to a first reactive gas supply source 541 and a purge gas supply source 55 via a first common gas supply path 521. The gas supply pipe 51 is also connected by a second gas supply pipe 512 to a second reactive gas supply source 542 and a purge gas supply source 55 via a second common gas supply path 522. For convenience, in FIG. 4, the first common gas supply path 521 and the second common gas supply path 522 are collectively referred to as the gas supply path 52. The first reactive gas supply source 541 and the second reactive gas supply source 542 are collectively referred to as the reactive gas supply source 54. The first gas supply pipe 511 and the second gas supply pipe 512 are collectively shown as a gas supply pipe 510. Valve V2 and flow rate adjuster M2 are for supplying a reactive gas, and valve V3 and flow rate adjuster M3 are for supplying a purge gas.

[0041] The gas supply pipe 51 is connected to a cleaning gas supply source 53 via a cleaning gas supply line 532 and a remote plasma unit (RPU) 531. The cleaning gas supply line 532 branches into four lines downstream of the RPU 531, and each line is connected to the gas supply pipe 51. A valve V1 and a flow rate regulator M1 are provided upstream of the RPU 531 on the cleaning gas supply line 532. Valves V11 to V14 are provided downstream of the RPU 531 for each branch, and the corresponding valves V11 to V14 are opened during cleaning. For convenience, only valves V11 and V14 are shown in FIG. 4. For example, when forming an insulating oxide film (SiO2) by CVD, tetraethoxysilane (TEOS) or oxygen (O2) gas is used as the reactive gas, and an inert gas such as nitrogen (N2) gas is used as the purge gas. When TEOS and O2 gas are used as the reactive gas, for example, TEOS is supplied from a first reactive gas supply source 541, and O2 gas is supplied from a second reactive gas supply source 542. In addition, for example, nitrogen trifluoride (NF3) gas is used as the cleaning gas.

[0042] From the perspective of the process gas distributed from the common gas supply path 52, each process gas path from each gas supply pipe 51 to the gas supply unit 4 is formed so that its conductance is the same. For example, as shown in FIG. 2, the downstream side of the first common gas supply path 521 branches into two systems, and the branched gas supply path further branches into two systems to form first gas supply pipes 511 in a tournament shape. The first gas supply pipes 511 are connected to the gas supply pipes 51 downstream of the cleaning gas valves V11 to V14. Furthermore, the downstream side of the second common gas supply path 522 branches into two systems, and the branched gas supply path further branches into two systems to form second gas supply pipes 512 in a tournament shape. The second gas supply pipes 512 are connected to the gas supply pipes 51 downstream of the cleaning gas valves V11 to V14.

[0043] The first gas supply pipes 511 are formed so that the lengths and inner diameters from their upstream ends (the ends connected to the first common gas supply path 521) to their downstream ends (the ends connected to the gas supply unit 4 or the gas supply pipes 51) are the same among the first gas supply pipes 511. The second gas supply pipes 512 are formed so that the lengths and inner diameters from their upstream ends (the ends connected to the second common gas supply path 522) to their downstream ends are the same among the second gas supply pipes 512. In this way, when viewed from the processing gas distributed from the first common gas supply path 521, the processing gas paths from the first gas supply pipes 511, the gas supply unit 4, the processing spaces S1 to S4, and the exhaust path 31 to the junction exhaust path 32 are formed so that the conductances are the same among the processing gas paths. Furthermore, from the perspective of the processing gas distributed from the second common gas supply path 522, each processing gas path from the second gas supply pipe 512, the gas supply unit 4, the processing spaces S1 to S4, and the exhaust path 31 to the confluent exhaust path 32 is formed so that the conductances of each path are the same.

[0044] The vacuum processing apparatus 2 is connected to a control unit 8 of the vacuum processing system 1. The control unit 8 controls each component of the vacuum processing apparatus 2. The control unit 8 allows an operator to input commands and perform other operations to manage the vacuum processing apparatus 2 using an input device. The control unit 8 can also visualize and display the operating status of the vacuum processing apparatus 2 using a display device. Furthermore, a control program and recipe data for controlling various processes executed by the vacuum processing apparatus 2 using a processor are stored in a memory unit of the control unit 8. The processor of the control unit 8 executes the control program and controls each component of the vacuum processing apparatus 2 according to the recipe data, thereby performing the desired process in the vacuum processing apparatus 2. For example, the control unit 8 controls each component of the vacuum processing apparatus 2 to perform substrate processes such as etching and film formation on a substrate loaded into the vacuum processing apparatus 2.

[0045] [Configuration of rotation drive mechanism and adjustment mechanism] 5 is a diagram showing an example of the configuration of a rotation drive mechanism 600 and an adjustment mechanism 700 according to an embodiment. A hole 27a is formed in the bottom 27 of the processing vessel 20 at a position corresponding to the position where the mounting table 22 is supported. A support member 23 that supports the mounting table 22 from below is inserted into the hole 27a. The rotation drive mechanism 600 is connected to a lower end 23a of the support member 23 located outside the processing vessel 20.

[0046] The rotary drive mechanism 600 includes a rotary shaft 610 , a motor 620 , and a vacuum seal 630 .

[0047] The rotating shaft 610 is connected to the lower end 23a of the support member 23 and is configured to be rotatable integrally with the support member 23. A slip ring 621 is provided at the lower end of the rotating shaft 610. The slip ring 621 has electrodes and is electrically connected to various wiring for supplying power to components around the mounting table 22. For example, the slip ring 621 is electrically connected to wiring for supplying power to the heater 24 embedded in the mounting table 22. Furthermore, for example, if an electrostatic chuck for electrostatically attracting the wafer W is provided on the mounting table 22, the slip ring 621 is electrically connected to wiring for applying a DC voltage to the electrostatic chuck.

[0048] The motor 620 is connected to the rotary shaft 610 and rotates the rotary shaft 610. When the rotary shaft 610 rotates, the mounting table 22 rotates via the support member 23. When the rotary shaft 610 rotates, the slip ring 621 also rotates together with the rotary shaft 610, but electrical connections between the slip ring 621 and various wiring for supplying power to components around the mounting table 22 are maintained.

[0049] The vacuum seal 630 is, for example, a magnetic fluid seal, and is provided around the rotating shaft 610 to airtightly seal the rotating shaft 610 while allowing the rotating shaft 610 to maintain rotation.

[0050] Furthermore, an adjustment mechanism 700 is engaged with the lower end portion 23a of the support member 23 via a vacuum seal 630.

[0051] The adjustment mechanism 700 includes a base member 710, a plurality of (for example, six) actuators 720, an absorption mechanism 730, and a bellows 740.

[0052] The base member 710 is engaged with the lower end 23a of the support member 23 located outside the processing chamber 20 via a vacuum seal 630, and is configured to be movable integrally with the mounting table 22. For example, the base member 710 is formed with a hole 711 having a diameter larger than the lower end 23a of the support member 23. The support member 23 passes through the hole 711, and the lower end 23a is connected to the rotation shaft 610. The vacuum seal 630 is provided around the rotation shaft 610 connected to the lower end 23a of the support member 23, and the base member 710 is fixed to the upper surface of the vacuum seal 630. As a result, the base member 710 is connected to the mounting table 22 via the vacuum seal 630, the rotation shaft 610, the support member 23, etc., and can be moved integrally with the mounting table 22.

[0053] The actuators 720 are arranged in parallel with one another between the bottom 27 of the processing vessel 20 and the base member 710, and adjust the position and inclination of the mounting table 22 by moving the base member 710 relative to the bottom 27 of the processing vessel 20. The actuators 720 are extendable and rotatably connected to the base member 710 via universal joints, and are also rotatably connected to the bottom 27 of the processing vessel 20 via universal joints. The actuators 720 and the base member 710 form a parallel link mechanism that can move the base member 710 in the X', Y', and Z' axis directions, as shown in FIG. 5 , and in rotation about the X' axis, the Y' axis, and the Z' axis. The movement coordinate system of the parallel link mechanism formed by the actuators 720 and the base member 710 is pre-adjusted to coincide with the coordinate system of the processing vessel 20. The parallel link mechanism connects the bottom 27 of the processing vessel 20 and the base member 710, allowing the actuators 720 to move the base member 710 relative to the bottom 27 of the processing vessel 20. This allows the position and tilt of the mounting table 22 to be adjusted. For example, the actuators 720 adjust the position of the mounting table 22 by moving the base member 710 in a direction perpendicular to the outer wall surface of the bottom 27 of the processing vessel 20 (e.g., the Z'-axis direction in FIG. 5). Furthermore, for example, the actuators 720 adjust the position of the mounting table 22 by moving the base member 710 in a direction along the outer wall surface of the bottom 27 of the processing vessel 20 (e.g., the X'-axis and Y'-axis directions in FIG. 5). Furthermore, for example, the multiple actuators 720 adjust the inclination of the mounting table 22 by tilting the base member 710 in a predetermined direction (for example, the direction of rotation around the X' axis and the direction of rotation around the Y' axis in Figure 5) relative to the outer wall surface of the bottom 27 of the processing vessel 20.

[0054] The position and tilt of the mounting table 22 adjusted by the multiple actuators 720 can be determined by detecting the position and tilt of the base member 710 using various detection means. Examples of the detection means include a linear encoder, a gyro sensor, a three-axis acceleration sensor, and a laser tracker.

[0055] In the vacuum processing apparatus 2, when the pressure inside the processing vessel 20 is switched from atmospheric pressure to vacuum, the processing vessel 20 is deformed due to the pressure difference. The processing vessel 20 is also deformed due to the temperature change caused by the heat transmitted from the substrate processing performed in the processing vessel 20. When the processing vessel 20 is deformed, stress due to the deformation of the processing vessel 20 is transmitted to the mounting table 22, which may cause the position or tilt of the mounting table 22 to change.

[0056] Therefore, in the vacuum processing apparatus 2 according to this embodiment, multiple actuators 720 are provided between the bottom 27 of the processing vessel 20 and a base member 710 that is movable integrally with the mounting table 22. The multiple actuators 720 adjust the position and inclination of the mounting table 22 by moving the base member 710 relative to the bottom 27. This allows the position and inclination of the mounting table 22 to be adjusted back to their original position and inclination even if the position and inclination of the mounting table 22 change due to deformation of the processing vessel 20. As a result, the vacuum processing apparatus 2 according to this embodiment can improve the position and inclination of the mounting table 22 due to deformation of the processing vessel 20, thereby improving the in-plane uniformity of substrate processing, such as film formation.

[0057] The absorbing mechanism 730 is provided on the bottom 27 of the processing vessel 20 and absorbs deformation of the bottom of the processing vessel 20. The absorbing mechanism 730 has a hole 731 that communicates with the interior of the processing vessel 20 via the hole 27a in the bottom 27 of the processing vessel 20. The actuators 720 are connected to the absorbing mechanism 730 without being directly connected to the bottom 27 of the processing vessel 20. As a result, even if the bottom 27 of the processing vessel 20 is deformed, the stress caused by the deformation of the bottom 27 of the processing vessel 20 is absorbed by the absorbing mechanism 730 and is not transmitted to the actuators 720, thereby preventing a decrease in the adjustment accuracy of the position and tilt of the mounting table 22. The absorbing mechanism 730 will be described in detail later.

[0058] The bellows 740 is disposed to surround the periphery of the support member 23. The upper end of the bellows 740 passes through a hole 731 formed in the absorbing mechanism 730 and is connected to the bottom 27 of the processing vessel 20, and the lower end is connected to the base member. As a result, the bellows 740 airtightly seals the space between the bottom 27 of the processing vessel 20 and the base member 710. The bellows 740 is configured to be expandable and contractable in response to the movement of the base member 710. For example, when the base member 710 moves in a direction perpendicular to the outer wall surface of the bottom 27 of the processing vessel 20 (e.g., the Z'-axis direction in FIG. 5), the bellows 740 expands and contracts in the Z'-axis direction. Furthermore, when the base member 710 moves in a direction along the outer wall surface of the bottom 27 of the processing vessel 20 (e.g., the X'-axis and Y'-axis directions in FIG. 5), the bellows 740 expands and contracts in the X'-axis and Y'-axis directions. Furthermore, for example, when base member 710 moves in a predetermined direction (for example, the direction of rotation about the X'-axis and the direction of rotation about the Y'-axis in FIG. 5) relative to the outer wall surface of bottom 27 of processing vessel 20, bellows 740 expands and contracts in the direction of rotation about the X'-axis and the direction of rotation about the Y'-axis. In vacuum processing apparatus 2, bellows 740 expands and contracts even when base member 710 is moved, so that air does not flow into processing vessel 20 through the space between bottom 27 of processing vessel 20 and base member 710, holes 731, and holes 27a.

[0059] Here, an example of the configuration of the absorbing mechanism 730 will be described with reference to Fig. 6. Fig. 6 is a diagram showing an example of the configuration of the absorbing mechanism 730 shown in Fig. 5. The absorbing mechanism 730 has a plate member 732 and a rod member 733.

[0060] The plate member 732 is formed in a disk shape and is disposed below the bottom 27 of the processing vessel 20. The plate member 732 is disposed at a distance from the outer wall surface of the bottom 27 of the processing vessel 20 in order to block the transmission of heat and vibration from the processing vessel 20.

[0061] One end of the rod member 733 is rotatably and slidably connected to the bottom 27 of the processing vessel 20, and the other end is rotatably and slidably connected to the plate member 732. That is, a recess 27b is formed in the outer wall surface of the bottom 27 of the processing vessel 20, and a spherical bearing 27c that is rotatably and slidably attached to the recess 27b. One end 733a of the rod member 733 is rotatably and slidably connected to the bottom 27 of the processing vessel 20 by being connected to the spherical bearing 27c. Meanwhile, a recess 732a is formed in the upper surface of the plate member 732 at a position corresponding to the recess 27b, and a spherical bearing 732b that is rotatably and slidably attached to the recess 732a. The other end 733b of the rod member 733 is rotatably and slidably connected to the plate member 732 by being connected to the spherical bearing 732b. The rod member 733 rotates in a direction corresponding to the deformation of the bottom 27 of the processing vessel 20, thereby suppressing the transmission of the deformation to the plate member 732. For example, when the bottom 27 of the processing vessel 20 deforms in the direction of the arrow in Fig. 6, the rod member 733 receives stress from the deformation of the bottom 27. However, the rod member 733 rotates together with the bottom 27 in the direction of the arrow in Fig. 6, thereby suppressing the transmission of the deformation to the plate member 732. The multiple actuators 720 are connected to the plate member 732. This prevents the stress caused by the deformation of the bottom 27 of the processing vessel 20 from being transmitted to the multiple actuators 720 via the plate member 732, thereby suppressing a decrease in the adjustment accuracy of the position and tilt of the mounting table 22.

[0062] Furthermore, the rod members 733 are arranged at a plurality of positions in the circumferential direction of the plate member 732. For example, three rod members 733 are provided at equal intervals at a plurality of positions inside the edge along the circumferential direction of the plate member 732. Four or more rod members 733 may be provided at equal intervals along the circumferential direction of the plate member 732.

[0063] [Specific example of flow of vacuum processing equipment control method] Next, a specific example of the flow of the method for controlling the vacuum processing apparatus 2 according to the embodiment will be described. Fig. 7 is a flowchart showing Example 1 of the flow of the method for controlling the vacuum processing apparatus 2 according to the embodiment.

[0064] The control unit 8 controls the substrate transfer mechanism 15 to transfer the wafer W toward the vacuum processing apparatus 2 (step S101).

[0065] The control unit 8 calculates the amount of deviation of the wafer W when it is transferred by the substrate transfer mechanism 15 as a correction amount for the position of the wafer W (step S102). The calculation of the correction amount for the position of the wafer W is performed, for example, by detecting the amount of deviation between the wafer W and the target position for transfer by the substrate transfer mechanism 15 using a position detection sensor provided at an arbitrary position on the transfer path of the wafer W. The position detection sensor is provided, for example, in the vacuum transfer chamber 14 in which the substrate transfer mechanism 15 is disposed. The position detection sensor may also be provided at the load / unload port 21 of the vacuum processing apparatus 2. The target position is the position of the wafer W on the mounting table 22, for example, a position where the center of the mounting table 22 and the center of the wafer W coincide with each other.

[0066] The controller 8 controls the actuators 720 so that the base member 710 moves from a predetermined reference position by the correction amount calculated in step S102 (step S103). The reference position is, for example, a position where the center of the mounting table 22 coincides with the center of the processing vessel 20. As the base member 710 moves, the mounting table 22 also moves from the reference position by the correction amount.

[0067] When substrate transfer mechanism 15 reaches vacuum processing apparatus 2, controller 8 controls substrate transfer mechanism 15 to transfer wafer W to above the target position within processing chamber 20. Then, controller 8 transfers wafer W between mounting table 22 and substrate transfer mechanism 15 (step S104). At this stage, the center of mounting table 22 and the center of wafer W coincide with each other. Note that the transfer of wafer W in step S104 can be achieved using the technique shown in FIG. 8, which will be described later.

[0068] The controller 8 controls the actuators 720 to move the base member 710 to the reference position (step S105). As the base member 710 moves, the mounting table 22 also moves to the reference position. At this stage, the centers of the mounting table 22, the wafer W, and the processing chamber 20 are aligned.

[0069] In this way, in the vacuum processing apparatus 2, instead of moving the substrate transfer mechanism 15 by the correction amount, the base member 710 and the mounting table 22 are moved integrally by the correction amount to transfer the wafer W. This reduces the transfer load on the substrate transfer mechanism 15. As a result, the throughput of the entire vacuum processing system 1 can be improved.

[0070] 7, the processes of steps S103 to S105 are performed in parallel for each of the four processing spaces S1 to S4 in the processing vessel 20. As a result, if the substrate transfer mechanism 15 transfers the four wafers W collectively to the four processing spaces S1 to S4 in the processing vessel 20, the wafers W can be transferred collectively between the mounting table 22 and the substrate transfer mechanism 15 (step S104). As a result, the throughput of the entire vacuum processing system 1 can be further improved.

[0071] Fig. 8 is a flowchart showing a second example of the flow of the control method for the vacuum processing apparatus 2 according to this embodiment. The control method shown in Fig. 8 is applied to, for example, the transfer of the wafer W in step S104 in Fig. 7. It should be noted that, in the initial stage, the mounting table 22 is in the processing position.

[0072] The control unit 8 controls the actuators 720 so that the base member 710 moves downward (i.e., in the negative direction of the Z' axis in FIG. 5) together with the mounting table 22 (step S201). As a result, the mounting table 22 starts to move downward.

[0073] As the mounting table 22 moves downward, the control unit 8 causes the lower ends of the lifter pins 26 to abut against the bottom 27 of the processing vessel 20, thereby causing the upper ends of the lifter pins 26 to protrude from the mounting surface of the mounting table 22 (step S202). At this stage, the mounting table 22 is lowered from the processing position to the transfer position.

[0074] The control unit 8 controls the actuators 720 so that the base member 710 moves upward (i.e., in the positive direction of the Z' axis in FIG. 5) together with the mounting table 22 (step S203). As a result, the mounting table 22 starts to rise.

[0075] As the mounting table 22 moves upward, the control unit 8 moves the lower ends of the lifter pins 26 away from the bottom 27 of the processing vessel 20, thereby storing the upper ends of the lifter pins 26 on the mounting surface side of the pin through-holes 26a (step S204). At this stage, the mounting table 22 is raised to the processing position.

[0076] As described above, in the vacuum processing apparatus 2, the lifter pins 26 can be extended and retracted by raising and lowering the base member 710. Therefore, a lifter pin drive mechanism for driving the lifter pins 26 can be omitted, thereby reducing the number of components in the processing vessel 20. Here, plasma may be generated in the processing vessel 20 to perform substrate processing on the wafer W. In this case, components in the processing vessel 20 may be consumed by the plasma, and particles generated from the consumed components may degrade the processing characteristics of the wafer W. In contrast, in the vacuum processing apparatus 2, the number of components in the processing vessel 20 can be reduced by eliminating the lifter pin drive mechanism, thereby reducing the risk of particle generation. Furthermore, the mounting table 22 can be raised and lowered by the adjustment mechanism 700, without the need for a separate lifting / lowering mechanism for the mounting table 22.

[0077] 9 is a flowchart showing a third example of the flow of the control method for the vacuum processing apparatus 2 according to the embodiment. In the following description, it is assumed that a film thickness sensor is disposed around the shower plate 43. The film thickness sensor is configured to be capable of contactlessly detecting the film thickness of a wafer W positioned within a predetermined detection range.

[0078] The control unit 8 controls the actuators 720 so that the base member 710 moves until the wafer W placed on the mounting table 22 moves within the detection range of the film thickness sensor (step S301). For example, the control unit 8 controls the actuators 720 to tilt the base member 710 until the wafer W placed on the mounting table 22 moves within the detection range of the film thickness sensor.

[0079] In this way, the wafer W placed on the mounting table 22 can be moved within the detection range of the film thickness sensor in the vacuum processing apparatus 2. This allows the vacuum processing apparatus 2 to perform film thickness detection in real time during substrate processing, even when film thickness sensors are arranged around the shower plate 43 facing the mounting table 22.

[0080] 10 is a flowchart showing a fourth example of the flow of the control method for the vacuum processing apparatus 2 according to the embodiment. The control method shown in Fig. 10 uses a distance measurement substrate that can measure the distance (hereinafter referred to as "gap") between the mounting table 22 and the shower plate 43 for each of a plurality of positions on the mounting surface of the mounting table 22. The distance measurement substrate has a wireless communication function that transmits the gap measured for each of the plurality of positions on the mounting surface of the mounting table 22 to the control unit 8 as a measurement result.

[0081] The control unit 8 places the distance measurement board on the mounting table 22 (step S401). The control unit 8 instructs the distance measurement board to measure the gap. The distance measurement board transmits the gap measured at each of the multiple positions in the circumferential direction of the mounting table 22 to the control unit 8 as the measurement result.

[0082] Based on the measurement results from the distance measurement board, the control unit 8 controls the multiple actuators 720 so that the base member 710 moves to a position where the distances (i.e., gaps) at multiple positions on the mounting surface of the mounting table 22 fall within a predetermined range (step S402).

[0083] In this way, the vacuum processing apparatus 2 can make the gap uniform at multiple positions within the mounting surface of the mounting table 22 without opening the processing chamber 20. As a result, the vacuum processing apparatus 2 can improve the in-plane uniformity of the substrate processing on the wafer W while maintaining the vacuum state of the processing chamber 20.

[0084] FIG. 11 is a flowchart showing a fifth example of the flow of the method for controlling vacuum processing apparatus 2 according to this embodiment.

[0085] The control unit 8 acquires measurement data indicating the position and inclination of the mounting table 22 relative to the state of the wafer W that satisfies predetermined conditions, measured for each substrate processing performed in the processing chamber 20 (step S501). For example, the control unit 8 acquires the measurement data by reading it from a storage unit of the control unit 8. The state of the wafer W is, for example, a numerical value that indicates the quality of a film formed on the wafer W by the substrate processing. Note that if the measurement data is stored in another device, the control unit 8 may acquire the measurement data from the other device via a network. Alternatively, the control unit 8 may generate and acquire the measurement data by machine learning based on the position and inclination of the mounting table 22 relative to the state of the wafer W for each substrate processing.

[0086] The control unit 8 performs substrate processing in the processing chamber 20 (step S502).

[0087] The control unit 8 determines whether or not the timing for switching the substrate processing currently being performed has arrived (step S503). If the timing for switching has not arrived (step S503: No), the control unit 8 continues the substrate processing currently being performed.

[0088] On the other hand, if the timing for switching has arrived (step S503: Yes), the controller 8 determines whether all substrate processing operations have been completed (step S404). If all substrate processing operations have not been completed (step S504: No), the controller 8 controls the actuators 720 based on the measurement data acquired in step S501 (step S505). That is, the controller 8 refers to the measurement data to determine the position and inclination of the mounting table 22 corresponding to the next substrate processing operation after switching. Then, the controller 8 controls the actuators 720 to move the base member 710 so that the position and inclination of the mounting table 22 are the determined position and inclination. After moving the base member 710, the controller 8 returns the process to step S502 and performs the next substrate processing operation after switching in the processing vessel 20.

[0089] On the other hand, if the execution of all substrate processing has been completed (step S504: Yes), the control unit 8 ends the processing.

[0090] In this way, the vacuum processing apparatus 2 can dynamically adjust the position and inclination of the mounting table 22 for each substrate processing. As a result, when substrate processing is performed continuously and sequentially, the vacuum processing apparatus 2 can obtain optimal processing results for each substrate processing.

[0091] (Effects of the embodiment) As described above, the vacuum processing apparatus 2 according to the embodiment includes the processing vessel 20, the mounting table 22, the support member 23, the base member 710, and multiple actuators 720. The processing vessel 20 is configured to maintain a vacuum atmosphere inside. The mounting table 22 is provided within the processing vessel 20, and a wafer W (substrate) is mounted on the mounting table 22. The support member 23 passes through a hole in the bottom 27 of the processing vessel 20 to support the mounting table 22 from below. The base member 710 is engaged with an end of the support member 23 located outside the processing vessel 20 and is configured to move integrally with the mounting table 22. The multiple actuators 720 are provided in parallel with each other between the bottom 27 of the processing vessel 20 and the base member 710, and adjust the position and inclination of the mounting table 22 by moving the base member 710 relative to the bottom 27 of the processing vessel 20. This allows the vacuum processing apparatus 2 to improve the position and inclination of the mounting table 22 due to deformation of the processing vessel 20.

[0092] Furthermore, the multiple actuators 720 and the base member 710 form a parallel link mechanism that can move the base member 710 in multiple axial directions and in rotational directions around each axis. The multiple actuators 720 and the base member 710 connect the bottom 27 of the processing vessel 20 to the base member 710 via the parallel link mechanism. As a result, the vacuum processing apparatus 2 can improve the position and inclination of the mounting table 22 by moving the base member 710 relative to the bottom 27 of the processing vessel 20 using the operation of the parallel link mechanism.

[0093] Furthermore, the actuators 720 adjust the position of the mounting table 22 by moving the base member 710 in a direction perpendicular to the outer wall surface of the bottom 27 of the processing vessel 20. This allows the vacuum processing apparatus 2 to improve the positional deviation of the mounting table 22 in the direction perpendicular to the outer wall surface of the bottom 27 of the processing vessel 20.

[0094] Furthermore, the actuators 720 adjust the position of the mounting table 22 by moving the base member 710 in a direction along the outer wall surface of the bottom 27 of the processing vessel 20. This allows the vacuum processing apparatus 2 to improve the positional deviation of the mounting table 22 in the direction along the outer wall surface of the bottom 27 of the processing vessel 20.

[0095] Furthermore, the actuators 720 adjust the tilt of the mounting table 22 by tilting the base member 710 with respect to the outer wall surface of the bottom 27 of the processing vessel 20. This allows the vacuum processing apparatus 2 to improve the tilt of the mounting table 22 with respect to the bottom 27 of the processing vessel 20.

[0096] Moreover, the vacuum processing apparatus 2 further includes bellows 740 (expandable member) that is provided around the support member 23 to airtightly seal the space between the bottom 27 of the processing vessel 20 and the base member 710 and that can expand and contract in response to the movement of the base member 710. This allows the vacuum processing apparatus 2 to prevent the inflow of air into the processing vessel 20 even when the base member 710 is moved.

[0097] The vacuum processing apparatus 2 further includes an absorption mechanism 730 that absorbs deformation of the bottom 27 of the processing vessel 20. The plurality of actuators are connected to the absorption mechanism 730. As a result, stress caused by deformation of the bottom 27 of the processing vessel 20 is absorbed by the absorption mechanism 730 and is not transmitted to the plurality of actuators 720, so that the vacuum processing apparatus 2 can suppress a decrease in the adjustment accuracy of the position and tilt of the mounting table 22.

[0098] The absorbing mechanism 730 includes a plate member 732 and a rod member 733. One end of the rod member 733 is rotatably and slidably connected to the bottom 27 of the processing vessel 20, and the other end is rotatably and slidably connected to the plate member 732. The rod member 733 rotates in a direction corresponding to the deformation of the bottom 27 of the processing vessel 20, thereby suppressing transmission of the deformation to the plate member 732. The plurality of actuators 720 are connected to the plate member 732. As a result, the stress caused by the deformation of the bottom 27 of the processing vessel 20 is absorbed by the plate member 732 and is not transmitted to the plurality of actuators 720, thereby preventing a decrease in the adjustment accuracy of the position and tilt of the mounting table 22 in the vacuum processing apparatus 2.

[0099] Furthermore, plate member 732 is disposed at a distance from the outer wall surface of bottom 27 of processing vessel 20. This allows vacuum processing apparatus 2 to block transmission of heat and vibration from processing vessel 20 to plate member 732.

[0100] Furthermore, the control method for vacuum processing apparatus 2 according to the embodiment includes the steps of: calculating the amount of deviation of wafer W (substrate) when it is transferred by substrate transfer mechanism 15 (transfer mechanism) as a correction amount for the position of wafer W; controlling multiple actuators 720 so that base member 710 moves by the correction amount from a predetermined reference position; transferring wafer W between mounting table 22, which has moved together with base member 710, and substrate transfer mechanism 15; and controlling multiple actuators 720 so that base member 710 moves to the reference position after the transfer of wafer W. This allows vacuum processing apparatus 2 to improve the throughput of vacuum processing system 1 as a whole.

[0101] Furthermore, pin through holes 26a are formed in mounting table 22, penetrating the mounting surface and the rear surface of mounting table 22. Vacuum processing device 2 further includes lifter pins 26 that are slidably inserted into pin through holes 26a, have upper ends suspended from pin through holes 26a on the mounting surface side of mounting table 22, and have lower ends protruding from the rear surface of mounting table 22 toward bottom 27 of processing vessel 20. The control method for the vacuum processing apparatus 2 according to the embodiment may include the steps of: controlling the actuators 720 so that the base member 710 moves downward together with the mounting table 22; bringing the lower ends of the lifter pins 26 into contact with the bottom 27 of the processing vessel 20 as the mounting table 22 moves downward, thereby causing the upper ends of the lifter pins 26 to protrude from the mounting surface of the mounting table 22; controlling the actuators 720 so that the base member 710 moves upward together with the mounting table 22; and bringing the lower ends of the lifter pins 26 away from the bottom 27 of the processing vessel 20 as the mounting table 22 moves upward, thereby storing the upper ends of the lifter pins 26 in the pin through holes 26 a on the mounting surface side of the mounting table 22. This allows the vacuum processing apparatus 2 to eliminate the lifter pin drive mechanism and reduce the number of components in the processing vessel 20, thereby reducing the risk of particle generation.

[0102] The vacuum processing apparatus 2 further includes a shower plate 43 (upper electrode) disposed in the processing chamber 20 facing the mounting table 22, and a film thickness sensor disposed around the shower plate 43 and capable of contactlessly detecting the film thickness of the wafer W positioned within a predetermined detection range. The method for controlling the vacuum processing apparatus 2 according to the embodiment may include a step of controlling the plurality of actuators 720 to move the base member 710 until the wafer W placed on the mounting table 22 moves within the detection range of the film thickness sensor. This allows the vacuum processing apparatus 2 to perform film thickness detection in real time during substrate processing, even when the film thickness sensor is disposed around the shower plate 43 facing the mounting table 22.

[0103] Furthermore, the control method for vacuum processing apparatus 2 according to the embodiment includes the steps of: placing, on mounting table 22, a distance measurement substrate capable of measuring the distance between mounting table 22 and shower plate 43 (upper electrode) for each of a plurality of positions within the mounting surface of mounting table 22; and controlling, based on the measurement results using the distance measurement substrate, a plurality of actuators 720 so as to move base member 710 to positions where the distances at the plurality of positions within the mounting surface of mounting table 22 fall within a predetermined range. This allows vacuum processing apparatus 2 to improve the in-plane uniformity of substrate processing for wafer W while maintaining the vacuum state of processing chamber 20.

[0104] Furthermore, the control method for vacuum processing apparatus 2 according to the embodiment includes the steps of acquiring measurement data indicating the position and inclination of mounting table 22 relative to the state of wafer W (substrate) that satisfies predetermined conditions, measured for each substrate processing performed in processing vessel 20, sequentially performing substrate processing in processing vessel 20, and controlling the plurality of actuators 720 based on the measurement data each time the timing for switching substrate processing arrives. This allows vacuum processing apparatus 2 to obtain optimal processing results for each substrate processing when performing substrate processing consecutively.

[0105] Although the embodiments have been described above, the disclosed embodiments should be considered to be illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the claims.

[0106] For example, in the above embodiment, the vacuum processing apparatus 2 is an apparatus that performs plasma CVD processing as substrate processing, but the disclosed technology may be applied to any apparatus that performs other substrate processing such as plasma etching.

[0107] In the above embodiment, the multiple actuators 720 are rotatably and slidably connected to the base member 710 via universal joints, and are also rotatably and slidably connected to the bottom 27 of the processing vessel 20 (i.e., the absorbing mechanism 730 in FIG. 5 ) via universal joints. However, the disclosed technology is not limited to this. The absorbing mechanism 730 may be omitted, and one end of the actuator 720 may be rotatably and slidably connected to the bottom 27 of the processing vessel 20 via universal joints. Alternatively, the base member 710 may be omitted, and the other end of the actuator 720 may be rotatably and slidably connected to a part of the vacuum seal 630 via a universal joint. In this case, the vacuum seal 630 functions as the base member. [Explanation of symbols]

[0108] 2. Vacuum processing equipment 20 Processing container 22 Mounting table 23 Support member 26 Lifter pin 26a Pin through hole 27 Bottom 43 shower plate 700 Adjustment mechanism 710 Base material 720 Actuator 730 Absorption Mechanism 732 Plate member 733 Rod member 740 Bellows

Claims

1. a processing vessel capable of maintaining a vacuum atmosphere therein; a mounting table provided in the processing chamber and on which a substrate is placed; a support member that passes through a hole in the bottom of the processing vessel and supports the mounting table from below; a base member that is engaged with an end of the support member located outside the processing chamber and that is movable integrally with the stage; a plurality of actuators arranged in parallel with each other between the bottom of the processing vessel and the base member, the actuators adjusting the position and inclination of the mounting table by moving the base member relative to the bottom of the processing vessel; A method for controlling a vacuum processing apparatus comprising: controlling the actuators to move the stage to a substrate transfer position; transferring the substrate while the mounting table is positioned at the transfer position; controlling the plurality of actuators to move the mounting table from the transfer position to a processing position for the substrate; controlling the actuators to adjust the inclination of the mounting surface of the mounting table before the step of transferring the substrate or during the time when the mounting table moves from the transfer position to the processing position after the step of transferring the substrate; A method for controlling a vacuum processing apparatus, comprising:

2. The step of adjusting the inclination of the mounting surface of the mounting table comprises: before the step of transferring the substrate, controlling the actuators to adjust the tilt of the mounting surface of the mounting table so as to deviate from the original tilt; The step of transferring the substrate includes: The tilt of the mounting surface of the mounting table is deviated from the original tilt. The method for controlling a vacuum processing apparatus according to claim 1 .

3. The step of adjusting the inclination of the mounting surface of the mounting table comprises: After the step of transferring the substrate, during the time when the mounting table moves from the transfer position to the processing position, the actuators are further controlled to adjust the inclination of the mounting surface of the mounting table to the original inclination. The method for controlling a vacuum processing apparatus according to claim 2 .

4. The step of transferring the substrate comprises: The tilt of the mounting surface of the mounting table is not adjusted. The step of adjusting the inclination of the mounting surface of the mounting table includes: After the step of transferring the substrate, the actuators are controlled to adjust the tilt of the mounting surface of the mounting table from the transfer position to the processing position, and after the mounting table reaches the processing position, the actuators are further controlled to adjust the tilt of the mounting surface of the mounting table to the original tilt. The method for controlling a vacuum processing apparatus according to claim 1 .

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