Ion beam sputtering apparatus and method

Abstract

To provide an ion beam sputtering apparatus and method for sputtering particles on the surface of an inner or outer conduit.SOLUTION: An ion beam sputtering apparatus includes: an ion source 18 for forming a hollow ion beam 20 along a beam axis 22 positioned in the hollow part of the beam; and a sputtering target 24 including a target body including particles to be sputtered and arranged to the ion source so that the ion beam collides with the target surface to sputter the particles toward a surface 12a to be modified from the target body. The target body is formed so as to sputter the particles sputtered toward the surface to be modified in a sputtering direction extending in the radial direction to the beam axis from the sputtering target as a whole, and the sputtering direction is one of i) a direction extending toward the beam axis and ii) a direction extending so as to separate from the beam axis.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE The present disclosure relates to an ion beam sputtering apparatus and method for sputtering particles onto a surface.

[0002] More particularly, but not by way of limitation, the present disclosure relates to an ion beam sputtering apparatus and method for sputtering particles onto a planar surface.

[0003] The present disclosure also relates to an ion beam sputtering apparatus and method for sputtering particles onto inner and / or outer conduit surfaces. [Background technology]

[0004] Ion beam surface modification (IBSM) techniques, such as ion beam sputtering, are used to deposit thin films of materials onto surfaces. IBSM techniques have several practical advantages over other existing surface modification techniques.

[0005] For example, IBSM metallization, in particular, does not require prior surface preparation because the energy of the deposited atoms is high enough to break the chemical bonds at the surface. Like other physical deposition techniques, it facilitates patterning, but its resolution can currently only be improved through post-processing using laser technology and complex multi-step photolithography techniques. However, the process minimizes the temperature rise of the coated substrate, and because it is a visible technique, it allows the use of thin organic stencils.

[0006] A typical conventional sputtering system includes an ion or deposition source, a sputtering target (or sputtering source), and a support positioned to support a substrate or other object having a surface to be modified or coated against the ion source and sputtering target. The ion source, sputtering target, and support are positioned within a vacuum chamber containing an inert gas, such as argon. The ion source is configured to generate a plasma and extract high-energy, positively charged ions from the plasma. The ions bombard the sputtering target, "sputtering" or ejecting atomic-sized particles from the sputtering target. The sputtered particles are directed toward the surface to be modified and deposited thereon.

[0007] In conventional systems, an ion source typically provides a point ion beam that is directed toward the generally planar surface of a sputtering target. The ion beam's angle of incidence (the angle between the ion beam and the sputtering target surface at the point of incidence and a line perpendicular to the sputtering target surface) is typically 45 degrees or greater. That is, the glancing angle of the ion beam (the angle between the ion beam and the sputtering target surface at the point of incidence) is typically 45 degrees or less. Sputtered particles (or atoms or molecules) are ejected from the surface over a variety of angles. However, the majority of sputtered particles typically eject from the sputtering target surface in a direction close to perpendicular to the ion beam. Furthermore, due to the low pressure in the vacuum chamber, the majority of sputtered particles follow a substantially linear trajectory. Therefore, in conventional systems, the ion source, sputtering target, and surface to be modified typically must be aligned in a nonlinear configuration within the chamber, with the ion source, sputtering target, and source generally aligned perpendicular to each other. In practice, a relatively large vacuum chamber is often required to accommodate the ion source, the sputtering target, and the surface to be modified.

[0008] Until now, IBSM has not been suitable for treating relatively large surfaces, such as planar surfaces. IBSM is typically limited to batch processing in high-vacuum environments, where carousels can be used to move, e.g., rotate, the surface to be modified in front of the sputtering source within the vacuum environment. Furthermore, aside from the microelectronics industry, IBSM is currently limited to laboratory applications because it requires relatively large and complex vacuum equipment that is incompatible with industrial requirements (low cost and high throughput). For example, industrial polymer surface processing typically requires operation over relatively large areas with high throughput.

[0009] Many existing IBSM techniques are inappropriate and / or impractical for coating the inside or outside of conduits such as pipes, tubes, or barrels. To coat such cylindrical shapes, physical deposition techniques, and IBSM in particular, require either the sputter source or the sample to rotate, or to have multiple sources surrounding or around the sample.

[0010] For example, some ion beam sputtering configurations may allow for simultaneous coating of the first side of a ring-shaped object, but require the sample to be flipped over to coat the second side. Furthermore, these configurations can be very power inefficient because they use the full beam, and the portion of the ion beam that strikes the protective cap on the ring does not contribute to the sputtering yield.

[0011] One of the problems with existing IBSM techniques stems from the sputtering geometry: a significant amount of sputtered material typically deposits on the walls and other parts of the vacuum chamber rather than on the sample. This can lead to waste of sputtered material and low yields. Summary of the Invention [Problem to be solved by the invention]

[0012] It is an object of at least preferred embodiments of the present invention to address at least some of the above-mentioned shortcomings. An additional or alternative object is to at least provide the public with a useful choice. [Means for solving the problem]

[0013] According to one aspect of the invention, an ion beam sputtering apparatus includes an ion source configured to generate a hollow ion beam along a beam axis located in a hollow portion of the hollow ion beam, and a sputtering target having a target body defining at least one target surface, the target body including sputterable particles, the target body being positioned relative to the ion source such that the ion beam impinges on the at least one target surface to sputter particles from the target body toward a surface to be modified of an object. The target body is shaped such that particles sputtered toward the surface to be modified are generally sputtered from the sputter target in a sputtering direction extending radially relative to the beam axis, the sputtering direction being one of (i) a direction extending toward the beam axis and (ii) a direction extending away from the beam axis.

[0014] As used herein, the term "comprises" (present tense) means "to comprise at least a part of." When interpreting each statement in this specification that includes the term "comprises," other features or features preceded by that term may also be present. Related terms such as "comprises" (root form) and "comprises" (singular) are to be interpreted in the same manner.

[0015] In one embodiment, the target body has a target passage extending therethrough, the target passage having an ion beam entrance for the ion beam and a particle exit for sputtered particles to exit the target passage towards the surface to be modified, and at least one target surface is in the form of at least a surface of the target body that at least partially defines the passage.

[0016] In one embodiment, the cross-sectional area of ​​the ion beam entrance in a plane perpendicular to the beam axis is substantially larger than the cross-sectional area enclosed by the periphery of the ion beam to allow the beam to pass through the entrance.

[0017] In one embodiment, the sputtering direction is a direction extending towards the beam axis.

[0018] In one embodiment, the target passageway is shaped to prevent the ion beam from exiting the target passageway through the particle outlet toward (or reaching) the surface to be modified outside the passageway without striking the target surface.

[0019] In one embodiment, the cross-sectional area of ​​the particle exit in a plane perpendicular to the beam axis is substantially smaller than the cross-sectional area of ​​the hollow portion of the ion beam.

[0020] In one embodiment, the beam axis overlaps the ion beam entrance, the target passage, and the particle exit. In one embodiment, the beam axis is a central beam axis, and the target passage has a central passage axis that is substantially coaxial with the beam axis. In one embodiment, the target passage is generally symmetrical about the central passage axis and / or the beam axis. In one embodiment, the target body is also generally symmetrical about the central passage axis and / or the beam axis.

[0021] In one embodiment, at least a portion of the target passage intermediate the ion beam entrance and the particle exit tapers towards the particle exit.

[0022] In one embodiment, the target passageway tapers from at or near the ion beam entrance to at or near the particle exit. In one embodiment, the passageway tapers at a substantially constant rate. In one embodiment, the target passageway has a substantially frusto-conical (or truncated) conical shape.

[0023] In one embodiment, the cross-sectional shape of the ion beam entrance (in a plane perpendicular to the beam axis) is substantially circular. Alternatively, the cross-sectional shape of the ion beam entrance can be other shapes, for example, substantially oval or rectangular with rounded corners. In one embodiment, the cross-sectional shape of the particle exit (in a plane perpendicular to the beam axis) is substantially circular. Alternatively, the cross-sectional shape of the particle exit can be other shapes, for example, substantially oval or rectangular with rounded corners.

[0024] In one embodiment, the ion beam entrance is substantially circular about the passage axis and / or beam axis. In one embodiment, the particle exit is substantially circular about the passage axis and / or beam axis. In one embodiment, the ion beam entrance and particle exit are substantially centered about the passage axis and / or beam axis.

[0025] In one embodiment, the ion beam sputtering apparatus includes a stencil at or near the particle outlet for defining a pattern and depositing the sputtered particles on the surface to be modified according to the pattern, hi one embodiment, the stencil is positioned adjacent to the particle outlet and extends at least partially across the particle outlet.

[0026] In one embodiment, the sputtering target includes one or more vacuum vents or openings, each extending through the target body, hi one embodiment, the or each vent extends through the target body from a first end or portion of the target body at or near the ion beam entrance to a second end or portion of the target body near the particle exit.

[0027] In one embodiment, the sputtering apparatus includes or is associated with a support for at least partially supporting an object having a surface to be modified outside the passageway adjacent the particle outlet of the sputtering target.

[0028] In one embodiment, the ion source and sputtering target are movable in a direction substantially perpendicular to the beam axis relative to an object having a surface to be modified that is positioned outside the passageway and adjacent the particle outlet.

[0029] According to a further aspect of the invention, a method of sputtering particles onto a surface includes positioning the surface outside a target passage adjacent a particle outlet of a sputtering apparatus, creating at least a partial vacuum within a vacuum chamber defined at least in part by a housing associated with and / or part of the sputtering apparatus, generating (or providing) a hollow ion beam using an ion source, and directing the ion beam into the target passage through the ion beam inlet to sputter particles onto the surface.

[0030] In one embodiment, the surface is a planar surface, for example the planar surface of a substrate.

[0031] In one embodiment, the method includes moving (or advancing) the surface to be modified relative to the particle outlet.

[0032] In one embodiment, the method includes moving the surface to be modified relative to the particle outlet in a direction substantially perpendicular to the beam axis.

[0033] Disclosed herein is a target body for defining a sputtering chamber and modifying a surface to be modified of an object disposed within the sputtering chamber with sputtered particles, the target body having an ion beam inlet (or opening or port) for an ion beam, the ion beam inlet opening into the sputtering chamber, and at least one target surface in the form of (or provided by) at least one chamber (or interior) surface of the target body at least partially defining the chamber.

[0034] In one embodiment, the cross-sectional area of ​​the ion beam entrance (in a plane perpendicular to the beam axis) is substantially larger than the cross-sectional area enclosed by the periphery of the ion beam to allow the ion beam to pass through the entrance.

[0035] In one embodiment, the sputtering chamber is configured so that particles sputtered toward the target having the surface to be modified are generally sputtered toward a central region within the sputtering chamber.

[0036] In one embodiment, the sputtering target includes one or more shields (or guards), the or each shield being positioned to block the ion beam from impinging on (or reaching) an object having a surface to be modified within the sputtering chamber. In one embodiment, the one or more shields include one or more radially and circumferentially extending shields (relative to the beam axis). The or each shield is positioned, in use, upstream (with respect to the ion beam) of an object that is at least partially located inside the sputtering chamber.

[0037] In one embodiment, the beam axis overlaps the ion beam entrance and the sputtering chamber. In one embodiment, the beam axis is a central beam axis, and the sputtering chamber has a central chamber axis that is substantially coaxial with the beam axis. In one embodiment, the sputtering chamber is generally symmetrical about the central chamber axis and / or the beam axis. In one embodiment, the target body is generally symmetrical about the central chamber axis and / or the beam axis.

[0038] In one embodiment, at least a portion of the sputtering chamber intermediate the ion beam entrance and an end (or bottom) of the sputtering chamber downstream (with respect to the ion beam) from the ion beam entrance tapers in a direction toward the end. In one embodiment, the sputtering chamber tapers from at or near the ion beam entrance to at or near the end. In one embodiment, the passage tapers at a substantially constant rate. In one embodiment, the sputtering chamber has a substantially conical shape and / or a substantially frusto-conical shape intermediate the ion beam entrance and the end.

[0039] In one embodiment, the cross-sectional shape of the ion beam entrance (in a plane perpendicular to the beam axis) is substantially circular (or ring). Alternatively, the cross-sectional shape of the ion beam entrance can be other shapes, for example, substantially oval or rectangular with rounded corners.

[0040] In one embodiment, the sputtering apparatus includes or is associated with a support mechanism for at least partially supporting (or holding or retaining) an object having a surface to be modified within the sputtering chamber. For example, the object can extend through an opening (or aperture) in the target body such that the object extends at least partially across and into the interior of the sputtering chamber.

[0041] In one embodiment, the ion source and sputtering chamber are movable in a direction substantially perpendicular to the beam axis relative to the object having the surface to be modified, for example, the object may be fed through the sputtering chamber in a direction perpendicular to the beam axis.

[0042] In one embodiment, the ion source and sputtering target are rotatable within the sputtering chamber relative to the surface to be modified about an axis perpendicular to the beam axis, e.g., the object containing the surface can be rotated.

[0043] According to a further aspect of the invention, a method of sputtering particles onto a surface includes positioning a surface within a sputtering chamber of a sputtering apparatus so that the surface extends at least partially across the sputtering chamber, creating at least a partial vacuum within a vacuum chamber defined at least in part by a housing associated with and / or part of the sputtering apparatus, generating (or providing) a hollow ion beam using an ion source, and directing the hollow ion beam into the sputtering chamber through an ion beam inlet to sputter particles onto the surface.

[0044] In one embodiment, the surface is an arcuate surface. In one embodiment, the surface is the outer surface of a conduit, such as a pipe or tube. Alternatively, the surface can be a planar surface.

[0045] In one embodiment, the method includes moving (or advancing) the surface to be modified relative to the ion beam and / or sputtering chamber.

[0046] In one embodiment, the method includes moving the surface to be modified relative to the ion beam and / or sputtering chamber in a direction substantially perpendicular to the beam axis.

[0047] In one embodiment, the method includes rotating the surface to be modified relative to the sputtering chamber.

[0048] In one embodiment, the sputtering direction is the direction extending away from the beam axis.

[0049] In one embodiment, the target body has at least one outer periphery defining at least one target surface.

[0050] In one embodiment, at least a portion of the target body has a cross-sectional area that increases in a direction away from the ion source such that the hollow ion beam impacts at least one target surface.

[0051] In one embodiment, the cross-sectional area enclosed by the periphery of at least a portion of the target body (in a plane perpendicular to the beam axis) increases in a direction away from the ion source in the direction of the beam axis.

[0052] In one embodiment, the cross-sectional area of ​​at least a portion of the target body increases in a direction away from the ion source from a first cross-sectional area that is substantially smaller than the cross-sectional area of ​​the hollow portion of the hollow ion beam to a second cross-sectional area that is substantially larger than the cross-sectional area of ​​the periphery of the hollow ion beam.

[0053] In one embodiment, the cross-sectional area bounded by the periphery of the target body increases from at or near a first end of the target body proximal to the ion source to at or near a second end of the target body distal to the ion source and downstream from the first end with respect to the ion beam.

[0054] In one embodiment, the cross-sectional area of ​​the periphery of the target body increases at a substantially constant rate in the direction of the hollow ion beam.

[0055] In one embodiment, at least a portion of the periphery of the target body intermediate the first end and the second end has a substantially conical shape or a substantially frusto-conical shape.

[0056] In one embodiment, the sputtering apparatus is configured to extend at least partially inside a hollow object (such as a conduit, tube, pipe, etc.) such that the beam axis is generally aligned (parallel or coaxial) with the central axis (or longitudinal axis) of the conduit.

[0057] In one embodiment, the sputtering target is movable in a direction substantially parallel to the beam axis relative to the object having the surface to be modified.

[0058] In one embodiment, at least the sputtering target is movable in a direction substantially parallel to the beam axis within a hollow object having an interior surface to be modified.

[0059] According to a further aspect of the invention, a method for sputtering particles onto an inner surface of a conduit includes positioning a sputtering apparatus such that a sputtering target is disposed at least partially within the conduit, creating at least a partial vacuum within a vacuum chamber defined at least in part by a housing associated with and / or part of the sputtering apparatus, generating (or providing) a hollow ion beam using an ion source, and directing the hollow ion beam toward a target surface of the sputtering target to sputter particles onto the inner surface.

[0060] In one embodiment, the surface is an arcuate surface.In one embodiment, the conduit is a pipe or tube.

[0061] In one embodiment, the method includes moving (or advancing) the surface to be modified relative to the sputtering target. In one embodiment, the method includes moving the surface to be modified relative to the sputtering target in a direction substantially parallel to the beam axis.

[0062] In one embodiment, the cross-sectional shape of the ion beam in a plane perpendicular to the beam axis is a substantially hollow circle or ring. The cross-section bounded by the periphery of the ion beam is a circle. Alternatively, the cross-sectional shape of the ion beam can be other shapes, such as a substantially hollow oval or a hollow rectangle with rounded corners.

[0063] In one embodiment, the ion beam has a potential or acceleration energy of 500 V or greater. In one embodiment, the ion beam has a potential or acceleration energy in the range of about 1 kV to about 30 kV. In one embodiment, the ion beam has a potential or acceleration energy in the range of about 15 kV to about 25 kV.

[0064] In one embodiment, the angle of incidence (or angles of incidence) of the ion beam is about 45 degrees or greater. That is, the glancing angle of the ion beam (the angle between the ion beam and the surface of the sputtering target at the point of incidence) is about 45 degrees or less. In one embodiment, the angle of incidence is in the range of about 50 degrees to about 80 degrees (the glancing angle of the ion beam is in the range of about 10 degrees to about 40 degrees). In one embodiment, the angle of incidence is in the range of about 60 degrees to about 75 degrees. In one embodiment, the angle of incidence is in the range of about 65 degrees to about 75 degrees. In one embodiment, the angle of incidence is about 70 degrees.

[0065] In one embodiment, the sputtering apparatus includes or is associated with a housing that at least partially defines a vacuum chamber for the ion source and the sputtering target.

[0066] In one embodiment, the sputtering target is a unitary piece. Alternatively, the sputtering target may be formed by two or more pieces that are joined and / or positioned together.

[0067] In one embodiment, the ion source is coupled to a heat sink that cools the ion source, hi one embodiment, the heat sink includes or is one or more copper parts or bodies.

[0068] In one embodiment, the target passageway is shaped to prevent the ion beam from exiting the target passageway through the particle outlet towards the surface to be modified outside the passageway without impacting the target surface.

[0069] In one embodiment, the beam axis overlaps the ion beam entrance, the target passageway, and the particle exit.

[0070] In one embodiment, the beam axis is a central beam axis and the target passage has a central passage axis that is substantially coaxial with the beam axis.

[0071] In one embodiment, the target passage is generally symmetrical about the central passage axis and / or the beam axis.

[0072] In one embodiment, the target body is also generally symmetrical about the central passage axis and / or the beam axis.

[0073] In one embodiment, the ion beam entrance and particle exit are substantially centered on the passage axis and / or the beam axis.

[0074] In one embodiment, the cross-sectional shape of the ion beam entrance in a plane perpendicular to the beam axis is selected from the group consisting of substantially circular, oval, and rectangular with rounded corners.

[0075] In one embodiment, the cross-sectional shape of the particle outlet in a plane perpendicular to the beam axis is selected from the group consisting of substantially circular, oval, and rectangular with rounded corners.

[0076] In one embodiment, the apparatus further includes a stencil at or near the particle outlet for defining a pattern and depositing the sputtered particles onto the surface to be modified according to the pattern.

[0077] In one embodiment, the stencil is positioned adjacent to the particle outlet and extends at least partially across the particle outlet.

[0078] In one embodiment, the sputtering target includes one or more vacuum vents or openings, each extending through the target body.

[0079] In one embodiment, the or each vent extends through the target body from a first end or portion of the target body at or near the ion beam entrance to a second end or portion of the target body near the particle exit.

[0080] In one embodiment, the apparatus includes or is associated with a support for at least partially supporting an object having a surface to be modified outside the passageway adjacent the particle outlet of the sputtering target.

[0081] In one embodiment, the ion source and sputtering target are movable in a direction substantially perpendicular to the beam axis relative to an object having a surface to be modified that is positioned outside the passageway and adjacent the particle outlet.

[0082] In one embodiment, the hollow ion beam has a width W and an inner radius R at the ion source, and exhibits an increase in beam width as the hollow ion beam travels towards the sputtering target, the increase in beam width being: Increase in beam width of A away from the beam axis, Increase in beam width of B towards the beam axis and Includes.

[0083] In one embodiment, the sputtering target has a height d defined by d=(A+W+B) tan δ, where δ represents the inclination of the sputtering target relative to the hollow ion beam.

[0084] In one embodiment, the sputtering target has a maximum inner diameter r equal to the inner diameter RB of the hollow ion beam when it strikes the sputtering target, the maximum inner diameter being defined by a≦r≦RB.

[0085] In one embodiment, the sputtering target has a minimum height h defined by h≧d.

[0086] In one embodiment, the sputtering target has a minimum width w defined by w≧A+W+B.

[0087] In one embodiment, the sputtering target is made of a single material such that at least one target surface provides sputterable particles.

[0088] In one embodiment, the sputtering target includes at least a first material and a second material, the first material being different from the second material.

[0089] In one embodiment, the first material and the second material are positioned at substantially the same angle of incidence relative to the hollow ion beam.

[0090] In one embodiment, the first material is positioned at a first angle of incidence relative to the hollow ion beam and the second material is positioned at a second angle of incidence relative to the hollow ion beam, the first angle of incidence being different from the second angle of incidence.

[0091] According to a further aspect of the present invention, a method for sputtering particles onto a surface to be modified includes positioning a sputtering target adjacent a particle outlet of a sputtering apparatus, the sputtering target having a target body defining at least one target surface, creating at least a partial vacuum within a vacuum chamber defined at least in part by a housing associated with and / or part of the sputtering apparatus, generating a hollow ion beam using an ion source of the sputtering apparatus, and directing the hollow ion beam through the ion beam inlet into a target passageway such that the hollow ion beam impacts the at least one target surface to sputter particles onto the surface to be modified. The target body is shaped such that particles sputtered towards the surface to be modified are generally sputtered in a sputtering direction extending radially from the sputter target relative to a beam axis, the sputtering direction being one of (i) a direction extending toward the beam axis and (ii) a direction extending away from the beam axis.

[0092] In one embodiment, the ion beam is prevented from exiting the target passageway through the particle outlet towards the surface to be modified.

[0093] In one embodiment, the sputtering target is made of a single material such that at least one target surface provides sputterable particles.

[0094] In one embodiment, the sputtering target includes at least a first material and a second material, the first material being different from the second material.

[0095] In one embodiment, the method further comprises positioning a stencil at or near the particle outlet for defining a pattern and depositing the sputtered particles on the surface to be modified according to the pattern.

[0096] The present invention, in one aspect, comprises several steps, the relationship of one or more of such steps to each other, the apparatus embodying structural features, and the combination and arrangement of elements adapted to affect such steps are all exemplified in the detailed disclosure that follows.

[0097] Numerous modifications in the structure and widely different embodiments and applications of the present invention will suggest themselves to those skilled in the art to which this invention pertains without departing from the scope of the invention as defined in the appended claims. The disclosures and descriptions herein are purely illustrative and are not intended to be in any sense limiting. Where specific integers having known equivalents in the art to which this invention pertains are described herein, such known equivalents are deemed to be incorporated herein as if individually set forth.

[0098] Furthermore, when features or aspects of the invention are described in terms of a Markush group, those skilled in the art will understand that the invention is also thereby described in terms of any individual member or subgroup of members of the Markush group.

[0099] As used herein, the term "(s)" following a noun refers to the plural and / or singular form of that noun.

[0100] As used herein, the term "and / or" means "and" or "or," or where the context allows for both.

[0101] Reference to a range of numbers disclosed herein (e.g., 1 to 10) is intended to include reference to every rational number within that range (e.g., 1, 1.1, 2, 3, 3.9, 4, 5, 6, 6.5, 7, 8, 9, and 10) and every rational number range within that range (e.g., 2 to 8, 1.5 to 5.5, and 3.1 to 4.7); therefore, all subranges of every range explicitly disclosed herein are hereby expressly disclosed. These are merely examples of what is specifically intended, and all possible combinations of numerical values ​​between the lowest and highest values ​​recited should be considered to be expressly stated in this application as well.

[0102] Modifiers such as "top," "bottom," "upper," "lower," "lower side," "upper," "upper" and "lower," as well as "horizontal" and "vertical," when used herein with respect to features illustrated in the accompanying drawings, are for convenience and clarity of description and should not be construed as limiting the operation or use of the described sputtering apparatus, or the sputtering apparatus and / or its components, to any particular orientation, including but not limited to, the orientations described herein and / or illustrated in the accompanying drawings.

[0103] Where reference is made herein to patent specifications, other external documents, or other sources of information, this is generally done for the purpose of providing a context for explaining features of the present invention. Unless otherwise expressly stated, the reference to such external documents or such sources of information should not be construed as an admission that such documents or such sources of information are prior art or form part of the general knowledge in the art in any jurisdiction.

[0104] In the description herein, reference may be made to subject matter that is not within the scope of the appended claims, which subject matter must be readily identifiable by one of ordinary skill in the art and can assist in practicing the invention as defined in the presently appended claims.

[0105] Although the present invention has been broadly described above, those skilled in the art will appreciate that the present invention is not limited thereto, and that the following description provides examples of embodiments that are also included in the present invention. [Brief explanation of the drawings]

[0106] Embodiments of the present disclosure will now be described, by way of non-limiting example only, with reference to the accompanying drawings, in which: [Figure 1] 1 shows a schematic cross-sectional view of an ion beam deposition system having an ion beam sputtering apparatus according to a first embodiment of the present disclosure. [Figure 2A] 2 shows a schematic side view of a portion of the ion source housing of the sputtering apparatus of FIG. 1. [Figure 2B] 2B shows a cross-sectional view of the ion source housing taken along plane AA of FIG. 2A. [Figure 2C] 2B shows a top view of the ion source housing of FIG. 2A in the direction labeled B in FIG. 2A. [Figure 3A] 2 shows a schematic perspective view of an ion source of the sputtering apparatus of FIG. 1. [Figure 3B] 3C shows an exploded perspective view of the ion source of FIG. 3B. [Figure 3C] 3B shows a side view of the ion source of FIG. 3A. [Figure 3D] FIG. 3C shows a top view of the ion source of FIG. 3A in the direction indicated as C. [Figure 3E] FIG. 3C shows a bottom view of the ion source of FIG. 3A in the direction labeled D. [Figure 3F] 3E shows a cross-sectional view of the ion source of FIG. 3A taken along plane AA. [Figure 4] FIG. 1 shows a bottom view of an ion source having a generally rectangular opening with straight, angular ends. [Figure 5] FIG. 1 shows a bottom view of an ion source having a generally rectangular opening with rounded corners. [Figure 6] FIG. 1 is a bottom view of an ion source having a generally oval or elliptical opening. [Figure 7] 2 shows a schematic cross-sectional side view of the ion source and sputtering target of the sputtering apparatus of FIG. 1. [Figure 8] 2 shows a schematic cross-sectional side view of a sputtering target of the sputtering apparatus of FIG. 1 used to sputter particles onto a planar surface. [Figure 9] 2 shows a partially schematic cross-sectional side view of the ion beam and a portion of the sputtering target of the sputtering apparatus of FIG. 1. [Figure 10A] FIG. 1 is a schematic top view of a sputtering target of a sputtering apparatus according to a second embodiment of the present disclosure, used to sputter particles onto a surface of an object at least partially suspended within a sputtering chamber within the sputtering target. [Figure 10B] 10B shows a cross-sectional side view of the sputtering target of FIG. 10A taken through plane AB of FIG. 10A. [Figure 10C] 10B shows a cross-sectional side view of the sputtering target of FIG. 10A taken through plane CD of FIG. 10A. [Figure 11] FIG. 2 is a schematic cross-sectional side view of a sputtering target of a sputtering apparatus according to a second embodiment of the present disclosure used to sputter particles onto the interior surface of a conduit. [Figure 12] 1 shows an example of a hollow beam of an ion beam deposition system. [Figure 13] 1 shows a graph of the change in average deposited copper thickness for different displacement speeds of a sputtering system on glass. [Figure 14] 1 shows a graph of the variation of average deposited copper thickness for different accelerating voltages of a sputtering system on glass. [Figure 15] 1 shows a graph of the variation of the average deposited titanium thickness for different accelerating voltages of a sputtering system on glass. [Figure 16] 1 shows a graph of the change in average deposited copper thickness for different displacement speeds of a sputtering system on glass. DETAILED DESCRIPTION OF THE INVENTION

[0107] Sputtering equipment (Figure 1-9) An ion beam deposition system 10 suitable for depositing at least one material on a substantially planar surface (or region) 12a is shown generally in Figures 1 to 9. The deposition system 10 includes an ion beam sputtering apparatus (or sputtering device) 14 according to a first embodiment of the present disclosure.

[0108] The sputtering apparatus 14 includes or is associated with a housing 16, a high-energy ion or deposition source 18 for generating or providing a high-energy ion beam 20 along a beam axis 22, and a sputtering target 24 containing sputterable particles. The housing 16 at least partially defines a vacuum chamber 26 for the ion source 18 and the sputtering target 24, both of which are disposed within and supported within the housing 16. The ion source 18 operates under vacuum. As described below, the ion source 18 is positioned relative to the sputtering target 24 such that the ion beam 20 impinges upon, strikes, or bombards the sputtering target 24, sputtering or ejecting atomic-sized particles, atoms, or molecules from the sputtering target 24 toward the surface 12 a to be modified.

[0109] An exemplary ion source 18 is shown in Figures 3a-3f. The major components of the ion source 18 are each generally circular or annular about the beam axis 22 and share a common axial centerline that is coaxial with the beam axis 22. The major components of the ion source 18 are a cathode 28, an anode 30, and a magnet 32. The cathode 28 is provided or formed by a front piece 28a, a body piece 28b, and a back piece 28c. The ion source 18 also includes an insulator 34 for the anode voltage that extends through the generally circular cathode back piece 28c to the anode 30, an insulator 36 for the gas supply, and an insulator or barrier 38 between the cathode back piece 28c and the anode 30. The generally circular cathode front piece 28a is attached to the end of a magnet 32. The magnet 32 ​​may include or consist of one or more magnets, such as one or more permanent magnets. In another embodiment, the magnet includes one or more electromagnets.

[0110] In one embodiment, the ion source 18 has a ring-shaped aperture 40 for producing a thin hollow ion beam. An example of a hollow ion beam is shown at 20 in FIGS.

[0111] In one embodiment, an ion beam is a stream of ions of like charge that propagates along an electric field gradient. A hollow ion beam is an ion beam that is roughly cylindrical in shape. It exhibits a circular cross section, with few or no ions flowing through the center of the cylinder and a maximum number of ions flowing through the walls of the cylinder. Hollow ion beams are further described below with reference to FIG. 12.

[0112] The aperture 40 has a cross-sectional shape (in a plane perpendicular to the beam axis 22) that is substantially hollow circular (or ring) shaped, such that the cross-section of the resulting ion beam 20 is hollow circular. The outer diameter of the cathode body piece 28b can be approximately 23 mm, and the inner diameter of the cathode front piece 28a can be approximately 17 mm, resulting in a width of the aperture 40 (and corresponding thickness or width 220 of the ion beam 20) of approximately 3 mm. The beam axis 22 is located in the hollow portion of the ion beam. The beam axis is a central beam axis that coincides with the center of the hollow portion of the ion beam. Circumferentially extending ends 42, 44 of the cathode front piece 28a and the cathode body piece 28b at least partially define the aperture 40 and are each chamfered to define, for example, an angle 46 of approximately 45 degrees with the beam axis 22 at the aperture 40.

[0113] Alternatively, the ion source 18 may have apertures of other shapes to generate or provide ion beams of other shapes.

[0114] Figure 4, for example, shows a generally rectangular opening 40A with straight, angular ends such that the cross section of the resulting beam is in the shape of a hollow rectangle with straight, angular ends. Figure 5 shows a generally rectangular opening 40B with rounded corners such that the cross section of the resulting beam is in the shape of a hollow rectangle with rounded corners.

[0115] Advantageously, the rectangular configuration facilitates deposition on elongated surface areas. For example, U.S. Patent No. 8,134,287 (Price) describes and shows an ion source having an elongated rectangular opening with rounded corners or edges.

[0116] FIG. 6 shows an oval or elliptical opening 40C so that the cross section of the resulting ion beam is a hollow oval or elliptical.

[0117] The sputtering target 24 has a target body 46 that defines at least one target surface 48 for the ion beam 20. The sputtering target body 46 includes sputterable particles. In one embodiment, the sputterable particles include, but are not limited to, metals, metal oxides, and / or semiconductors. Examples of metals of interest include copper, gold, platinum, titanium, tungsten, tin, indium, rhodium, samarium, iron, cobalt, nickel, chromium, zinc, and alloys of these metals. Examples of metal oxides of interest include zinc oxide, magnetite, titanium oxide, and tungsten oxide. Examples of semiconductors include oxides such as zinc oxide, tungsten oxide, and indium tin oxide. Examples of non-oxide semiconductors include silicon and germanium, as well as compounds such as gallium arsenide.

[0118] In one embodiment, the sputtering target is made of a single material such that the surface exposed to the beam provides sputterable particles.

[0119] For example, sputtering target body 46 can be a body containing copper and other non-copper sputterable particles (for heat dissipation). In one embodiment, heat dissipation of sputtering target 24 is achieved by direct conduction of heat to the external environment.

[0120] A sputtering target can also be made of multiple materials. For example, the body of the sputtering target can be made of a first material that includes a thermally conductive material such as aluminum or copper.

[0121] For elongated shapes such as rectangles with rounded ends, slots can be fabricated from the body of the sputtering target to allow for the insertion of plates or inserts of second or further material where the beam is expected to impinge on the sputtering target.

[0122] In one embodiment, the inserts are made of the same or different materials on both sides of the sputtering target. For example, one side is made of iron and the other side is made of nickel. When the beam strikes both inserts simultaneously, different sputtered particles are deposited on the sample being processed. One example includes forming an alloy layer on the surface, such as iron-nickel.

[0123] In one embodiment, the insert is mechanically pressed against the sputtering target body to maximize heat exchange into the sputtering target body and allow for heat dissipation.

[0124] In embodiments using inserts, the sputtering target comprises a material with a low sputtering yield to avoid contamination. Examples of such low sputtering yield materials include, but are not limited to, aluminum and graphite.

[0125] In one embodiment, the first material and the second material are positioned at substantially the same angle of incidence relative to the hollow ion beam.

[0126] In another embodiment, the sputtering body does not exhibit symmetry so that the inserts can be at different angles of incidence relative to the ion beam. A first material is positioned at a first angle of incidence relative to the hollow ion beam, and a second material is positioned at a second angle of incidence relative to the hollow ion beam. The first angle of incidence is different from the second angle of incidence.

[0127] This allows for the control of the sputtering yield of the different materials that make up the insert. x B 1-x One side of composition A can have a smaller angle than the other side of composition B to produce a deposited layer having a composition of x, where x is a function of the incident energy, the angle of each insert A, the height at which the beam strikes the insert, and the compositions of inserts A and B.

[0128] Yield Y of each of materials A and BA and Y B Calculate the sputtering of x=Y B / Y A A first estimate of x can be obtained by calculating the ratio of sputtering yields such as

[0129] In one embodiment, when different angles are used, the sputtering target is shaped so that the distance between the ion source and the part of the insert where the beam strikes is the same for both inserts A and B. This is the distance r between the central axis of the beam and insert A. A is the distance r between the central axis of the beam and insert B. B It requires that it be different from.

[0130] In one embodiment, the target body 46 has or defines a target passageway or opening 50 extending therethrough. The target passageway 50 has an ion beam entrance 52 for the ion beam 20 from the ion source to enter the passageway 50, and a particle exit or opening 54 for the sputtered particles to exit the target passageway 50 towards the surface 12a to be modified.

[0131] The target passage 50 has a central passage axis 56 that overlaps the inlet 52 and the outlet 54. The target passage 50 is substantially symmetrical about the central passage axis 56. The target body 46 may also be substantially symmetrical about the central passage axis 56.

[0132] The ion source 18 and sputtering target 24 are held within or by the housing 16 such that the inlet 52 is located upstream (with respect to the ion beam 20) of the particle outlet 54. The inlet 52 is located proximal to, or at least closer to, the ion source 18 than the particle outlet 54, which is located distal to, or at least further from, the ion source 18. The beam axis 22 overlaps the inlet 52, the passageway 50, and the outlet 54. The sputtering target 24 and the ion source 18 are linearly arranged such that the axis 56 of the passageway 50 is substantially parallel to, preferably parallel with, and more preferably substantially coaxial with, the beam axis 22.

[0133] The cross-sectional shape of the ion beam entrance 52 (in a plane perpendicular to the beam axis 22) is substantially circular. The cross-sectional shape of the particle exit 54 (in a plane perpendicular to the beam axis 22) is substantially circular. The ion entrance 52 is substantially centered on the beam axis 22. The exit 54 is substantially centered on the beam axis 22. Alternatively, the cross-sectional shapes of each of the ion beam entrance 52 and the particle exit 54 can be another shape, for example, substantially oval or rectangular with rounded corners. The cross-sectional shape of the entrance 52 can be different from the cross-sectional shape of the exit 54.

[0134] The cross-sectional area of ​​the ion beam entrance 52 (in a plane perpendicular to the beam axis 22) is substantially larger than the cross-sectional area bounded by the outer periphery of the ion beam 20 as the ion beam enters the passage 50. In one embodiment, the diameter of the ion beam entrance 52 (in a plane perpendicular to the beam axis 22) is substantially larger than the diameter of the outer periphery of the ion beam 20.

[0135] The target passage 50 is shaped to prevent the ion beam 20 from exiting the target passage 50 through a particle outlet 54 toward or reaching the surface 12a to be modified outside the passage 50 without impinging on the target surface 48, as described below. The cross-sectional area of ​​the particle outlet 54 (in a plane perpendicular to the beam axis 22) is substantially smaller than the cross-sectional area of ​​the hollow portion of the ion beam 20. In one embodiment, the diameter of the outlet 54 (in a plane perpendicular to the beam axis 22) is substantially smaller than the diameter of the circular hollow portion of the ion beam 20.

[0136] The target surface 48 is in the form of or provided by at least one passageway or interior surface of the target body 46 that at least partially defines the passageway 50. The target surface 48 is a substantially continuous passageway surface. Alternatively, the target surface 48 may include two or more adjacently disposed surfaces. At least a portion of the target passageway 50 intermediate the entrance 52 and the exit 54 tapers (reduced in size) toward the particle exit 54 such that the target surface 48 is inclined with respect to the beam axis 22. The target passageway 50 tapers from at or near the entrance 52 to at or near the exit 54. The passageway 50 tapers at a substantially constant rate. Alternatively, the passageway 50 may taper at a non-constant rate, for example, the passageway 50 may taper at a greater or lesser rate as the passageway 50 approaches the exit 54.

[0137] In one embodiment, the target passage 50 has a generally funnel-like shape, such as a substantially frusto-conical (or truncated conical) shape. The angle 58 defined between the inclined target surface 48 and the passage axis 56 and / or the beam axis 22 is between 0 and 90 degrees. The angle 58 is preferably 30 degrees or greater, and more preferably 35 degrees or greater. Alternatively, the target passage 50 can have another shape.

[0138] The sputtering target 24 includes one or more vacuum vents 60. The or each vent 60 extends through the target body 46. The or each vent 60 extends through the target body 46 from a first end or portion 62 of the target body 46 at or near the inlet 52 to a second end or portion 64 of the target body 46 near the outlet 54. The sputtering target 24 has three vents 60. The vents 60 are circumferentially spaced about the passage axis 58 / beam axis 22, preferably at substantially equal distances apart. The vents 60 may be extruded through the target body 46.

[0139] The sputtering apparatus 14 includes a heat sink 66 coupled to the ion source 18 to dissipate heat from the ion source 18. The heat sink 66 cools the ion source 18 to maintain an operating temperature below the Curie temperature, at which the strength of the magnet 32 ​​decreases and / or is irreversibly damaged. In one embodiment, the heat sink 66 includes a first component in the form of a circular plate 66a coupled to the cathode back piece 28c, a second component in the form of a second circular plate 66b coupled to the housing 16 and spaced apart from the first plate 66a, and a third component in the form of an elongated member or rod 66c extending between the first and second plates 66a, 66b. A surface of the first plate 66a is adjacent to a surface of the cathode back piece 28c. The rod 66c extends into the cathode back piece 28c through an opening 68 in the cathode back piece 28c. The rods 66c are positioned to extract heat from the first plate 66a and / or the cathode back piece 28c to the second plate 66b and the housing 16. The heat sink 66 can include or be, for example, copper. By providing a direct thermal connection between the ion source 18 and the environment outside the vacuum chamber 26, the temperature inside the ion source 18 is reduced. Alternatively or additionally, the heat sink 66 can include one or more other materials with relatively high thermal conductivity. If desired, additional cooling can be provided from outside the sputtering apparatus 14 using one or more air or liquid heat exchangers.

[0140] 2a-2c show the portion 16a of the housing 16 that, when in use, rests on the surface 12a (as shown). In one embodiment, the housing 16 includes a first generally cylindrical or annular portion 70 that houses a vacuum pump 72, a second generally cylindrical or annular portion 74 that includes a gas inlet or feedthrough 76 and a connector 78 for anode voltage, and a third, at least partially, generally cylindrical or annular portion 80 that is configured to facilitate sealing at the interface between the housing 16 and the surface 12a to be modified. In one embodiment, the vacuum pump 72 is, for example, a turbomolecular pump that establishes and maintains a vacuum within the housing 16, preferably positioned to substantially seal the housing 16 to the surface 12a at the housing-surface interface. The pump 72 can draw air through a vent 60 to maintain a good vacuum. The connector 78 for anode voltage can be, for example, a Bayonet-Neel-Concelman (BNC) connector. The third portion 80 has a flange 82 for a vacuum gauge used to measure the pressure within at least the portion of the vacuum chamber 26 defined by the housing 16. The first and second portions and the second and third portions are separated by insulators 84, 86, respectively.

[0141] In one embodiment, the ion source 18 and the sputtering target 24 are movable relative to the surface 12 a to be modified. In one embodiment, the ion source 18 and the sputtering target 24 are operable and slidable over the stationary surface 12 a to be treated, e.g., in one or more directions 88 substantially perpendicular to the beam axis 22. In another embodiment, the surface 12 a to be modified is slid under or in front of the stationary ion source 18 and stationary sputtering target 24.

[0142] By limiting the area of ​​contact with the housing 16 at the housing-surface interface and placing additional pumping mechanisms on both sides 12a, 12b of the surface to be modified, it is possible to establish a small vacuum on substrates that are difficult to seal, such as rough substrates like wood or leather. Softer substrate surfaces can also be treated by clamping the substrate with one or more clamps 90 inside the vacuum chamber 26 to reduce leakage. Localized heating of the area around the interface between the housing 16 and the substrate 12 with its surfaces 12a, 12b has also been found to help achieve a vacuum more quickly.

[0143] Sputtering method (Figures 8 and 9) 8 and 9, a method for sputtering particles onto a surface 12a of an object to be modified using a sputtering apparatus 14 is described. In the embodiment shown in FIGS. 1-9, the object is a substrate 12, and the surface 12a is a substantially planar surface of the substrate. In alternative embodiments, the surface 12a can be substantially non-planar. In alternative embodiments, the object can be a conduit, for example, a tube or pipe having an arcuate outer surface that can be rotated beneath an outlet 54.

[0144] Surface 12a is located adjacent particle outlet 54 of sputtering apparatus 14 and outside target passage 50. A housing 16, which is part of and / or associated with sputtering apparatus 14, at least partially defines a vacuum chamber 26 for ion source 18 and sputtering target 24. Within vacuum chamber 26, typically 10 -4 A partial vacuum of less than 5×10 mbar is created. In one embodiment, the partial vacuum created in vacuum chamber 26 is approximately 5×10 mbar. -6 mbar to approximately 3 × 10 -5 mbar range, preferably about 5×10 -5The pressure is less than 100 mbar. The housing 16 is positioned to substantially seal against the opposing surfaces 12a, 12b of the substrate. A voltage is applied to the cathode 28 and anode 30, with a voltage difference between the anode 30 and the cathode strips 28a, 28b, 28c sufficient to induce plasma formation at a predetermined partial pressure. The voltage difference is typically in the range of about 500 V to about 3 kV, typically about 1 kV to about 2 kV. The voltage is obtained from a power supply external to the housing 16. The voltage has a positive polarity with respect to the sputtering target 24, which is preferably at earth or ground potential. A small amount of gas, including an inert gas such as argon, is introduced through the inlet 76. At these pressures, the ion source 18 generates a plasma when a voltage is applied and gas is introduced between the cathode 28 and anode 30. Ion source 18 generates or provides a high-energy ion beam 20 by extracting positively charged ions from a plasma, which are directed or accelerated outward along a beam axis 22 through an aperture 40 toward a sputtering target 24 by a high potential difference. In one embodiment, ion beam 20 has a potential or acceleration energy of about 500 V or greater, preferably in the range of about 1 kV to about 30 kV, and more preferably in the range of about 15 kV to about 25 kV.

[0145] The thin hollow beam 20 passes through an ion beam entrance 52 and into a passageway 50 of the sputtering target 24 located directly below the ion source 18. The ion beam 20 strikes, bumps into, or impacts the target surface 48, sputtering or ejecting particles (shown schematically in red shading) from the body 46 of the sputtering target 24 toward the surface 12a. The body 46 of the sputtering target 24 is gradually eroded. The particles sputtered toward the surface 12a pass through an exit 54 of the sputtering target 24 and are deposited on a substrate located directly below.

[0146] In one embodiment, the circular aperture 40 and circular exit 54 of the high-energy source result in a disk-shaped deposit on the surface 12a. In another embodiment, the ion source 18, aperture 40, and resulting beam 20 can have a rectangular shape with rounded corners. This configuration allows for uniform deposition over elongated areas. Advantageously, the sputtering apparatus 14 can be scaled for large linear geometries, simultaneously increasing the area deposited.

[0147] While some particles (generally designated 92) are sputtered from the sputtering target in a direction opposite to the ion source, particles sputtered toward the surface (generally designated 94) are generally sputtered from the sputtering target in a radially extending sputtering direction, generally indicated by arrow 96 relative to the beam axis 22, which is one of (i) a direction extending toward the beam axis 22 and (ii) a direction extending away from the beam axis 22. In the embodiment shown in FIGS. 1-9 , the radially extending sputtering direction is a direction extending radially toward the beam axis 22, and the sputtering apparatus 14 is positioned to sputter particles from the sputtering target 24 all around the ion beam 20.

[0148] Ions backsputtered from the sputtering target toward the ion source can coat the insulators 34, 36 inside the ion source 18. To avoid short circuits due to this redeposition, in one embodiment, the insulators 34, 36 are shaped to increase their exposed surface area to limit the thickness growth rate of any redeposition. Some areas of the insulators 34, 36 can be masked from direct exposure to the redeposited ions to limit the thickness growth rate.

[0149] The shape of the target passage 50 and / or the size of the exit 54 inhibit and / or prevent the ion beam 20 from reaching the surface to be modified. The smaller diameter of the passage 50, the downstream entrance 52, and the exit 54 prevent the ion beam 20 from reaching the surface 12a. Instead, the ion beam 20 impinges on the sloped surface 48 of the sputtering target 24, gradually eroding the sloped surface 48. In one embodiment, the ion beam angle of incidence (or angles of incidence) (which is the angle between the ion beam 20 and a line normal to the target surface 48 at the point of incidence between the ion beam 20 and the target surface 48) is greater than or equal to about 45 degrees. That is, the glancing angle 98 of the ion beam (which is the angle between the ion beam 20 and the surface 48 of the sputtering target 24 at the point of incidence) is less than or equal to about 45 degrees. In one embodiment, the angle of incidence ranges from about 60 degrees to about 80 degrees (the glancing angle of the ion beam ranges from about 10 degrees to about 30 degrees).

[0150] 9 (showing a portion of ion beam 20 and sputter target 24), the majority or greater portion of the sputtered particles are projected in a primary direction (roughly corresponding to the direction of sputtered particle beam 202) that makes an angle 204 with respect to a normal axis 206 perpendicular to surface 48 of sputter target 24. This angle 204 is generally close to or approximately the same as angle of incidence 208 of ion beam 20.

[0151] In one embodiment, the particle outlet 54 should be large enough so that the main direction of sputtering from an incidence point 210 (shown in the center of the width 220 of the ion beam 20) on one side 46 a of the sputter body 46 is not obstructed by the other side 46 b of the sputter body 46. In one embodiment, for example, the distance 212 of the center point 212 of the particle outlet 54 (or the path axis 58 / beam axis 22) in a direction perpendicular to the path axis 58 / beam axis 22 is greater than or equal to the sum of (i) a distance 214 between the incidence point 210 and the particle outlet edge 48 in a direction perpendicular to the path axis 58 / beam axis 22, and (ii) a distance 216 between the particle outlet edge 48 and the center point 212 in a direction perpendicular to the path axis 58 / beam axis 22.

[0152] The sputtering yield varies and can be controlled by the energy and angle of incidence of the bombarding ions. In one embodiment, the potential or acceleration energy of the ion beam 20 and / or the angle of incidence (or alternatively the angle 98 between the ion beam 20 and the surface 48 of the sputtering target 24 at the point of incidence) are selected to optimize the sputtering yield obtained from the ion beam sputtering conditions.

[0153] For each combination of incident ion species, sputtering target material, and incident angle or angles, there exists an energy that results in the maximum sputtering yield. In one embodiment, for example, a sputtering target with a predominantly positively charged argon (Ar) ion source having an incident angle of about 55 degrees to about 75 degrees is used. + ) The optimum sputtering yield with an ion beam is achieved with ion energies between 15 keV and 20 keV.

[0154] Similarly, for each combination of incident ion species, sputtering target material, and beam energy, there is an incident angle that results in the maximum sputtering yield. In one embodiment, for example, most Ar atoms have energies between about 15 keV and about 20 keV. + The optimum sputtering yield with an ion beam is achieved at an angle of incidence of about 55 degrees to about 75 degrees.

[0155] An additional high voltage bias can be applied between the sputtering target 24 and ground to provide an accelerating voltage for any ionized sputtered atoms. This voltage bias is advantageous when using the sputtering apparatus 14 to implant atoms and molecules from the sputtering target 24 onto and / or into the surface 12 a. In one embodiment, the voltage bias applied between the sputtering target 24 and ground ranges from about 1 kV to about 50 kV, for example. A voltage bias in this range (about 1 kV to about 50 kV) has been recognized as advantageous for providing an accelerating voltage without requiring significant additional electrical insulation and radiation shielding. In another embodiment, the voltage bias applied between the sputtering target 24 and ground ranges from about 15 kV to about 20 kV, for example. A voltage bias in this range (about 15 kV to about 20 kV) has been recognized as advantageous for producing surface and near-surface nanoparticles of most metallic elements on and within organic and inorganic substrates.

[0156] In one embodiment, the sputtering apparatus 14 optionally includes a stencil 100 at or near the outlet 54 for defining a pattern and depositing the sputtered particles on the surface 12 a according to the pattern. In one embodiment, the method includes positioning the stencil 100 adjacent the particle outlet 54 such that the stencil 100 extends at least partially across the particle outlet 54.

[0157] In one embodiment, an electron gun (not shown) is aimed at or near the exit of the sputtered atoms to promote positive ionization of the sputtered atoms.

[0158] In one embodiment, sputtering apparatus 14 is or forms part of a dynamic vacuum system that facilitates deposition of materials onto planar surfaces 12a, particularly large area planar surfaces.

[0159] The housing 16, ion beam source 18, and sputtering target 24 are movable relative to the surface 12a to be modified. In one embodiment, the method includes moving or providing the surface 12a in front of a deposition beam with sputtered particles from the sputtering target 24, e.g., from atmospheric pressure (outside the housing 16) into a vacuum chamber 26 at least partially defined by the housing. A dynamic seal in the vacuum chamber 26 allows for an active pressure gradient to be established between the ion source 18 and the surface 12a to be treated.

[0160] In one embodiment, the sputtering apparatus 14 has one or more dynamic seals 102a, 102b, 102c for forming a seal at the interface between the housing and the substrate surfaces 12a, 12b. In one embodiment, the sputtering apparatus has three seals 102a, 102b, 102c arranged concentrically with respect to the upper and lower surfaces 12a, 12b, respectively (as seen in the figure).

[0161] In one embodiment, each seal 102a, 102b, 102c is formed from two distinct components, each with low gas permeability. One component is a low-friction, incompressible member 104 formed from a rigid material such as Teflon. The second component is a compressible, resilient member 106, such as an O-ring. Each seal 102a, 102b, 102c surrounds the area between two surfaces 110, 12a that experience a pressure gradient. The first rigid component 104 is located within a recess 108 formed in the first surface 110 of the housing 16. The second resilient component 106 contacts both the first rigid component 104 and the upper surface 12a (or lower surface 12b) of the substrate 12. The seals 102a, 102b, 102c function particularly well in situations where the surfaces 12a and / or 12b contain discontinuities and imperfections.

[0162] A pressure gradient can be created because the areas between adjacent concentric rings can be partially evacuated. For example, a vacuum pump 72 can be used to create a first or primary pressure within the innermost seal, as indicated by arrow 112. One or more additional pumps between the outer concentric rings can create a second pressure, higher than the first pressure, as indicated by arrow 114. An overpressure (high pressure) area outside the concentric rings can be used to further isolate the vacuum chamber 26 from the external environment.

[0163] Advantageously, the sputtering apparatus 14 of one embodiment does not require the object 12 having the surface 12 a to be modified to be positioned perpendicular to the ion beam 20. Instead, the object 12 can be aligned, for example, directly below the ion source 18 and beam 20. As a result, the vacuum chamber 26 for the ion source 18 and sputtering target 24 can be advantageously smaller. As a result, the sputtering apparatus 14 of one embodiment can be advantageously simpler and less expensive to manufacture.

[0164] In one embodiment, the sputtering apparatus 14 allows for the deposition of patterned and / or uniform thin films substantially across the entire underlying surface 12 a. Again, by way of example only, applications may include, but are not limited to, the deposition of electrodes, arrays of materials with different wettability, low-emissivity layers, aesthetic coatings, reflective surfaces, electromagnetic shielding layers or films, wear-resistant layers or films, antibacterial surfaces, and antifouling surfaces.

[0165] Sputtering equipment (Figures 10A-10C) 10A-10C, an alternative sputtering apparatus 120 according to a second embodiment of the present disclosure will be described. The sputtering apparatus 120 includes an ion source 18 for providing a high-energy ion beam 20 as described above, and a sputtering target 122, as shown schematically in FIGS. 10A-10C. The ion source 18 (not shown in FIGS. 10A-10C), again operates under vacuum, and is again positioned within a housing (not shown) relative to the sputtering target 122 to provide an ion beam 20 that impacts a target surface 124 of the sputtering target 122 and sputters particles from the sputtering target 122 toward a surface 126 to be modified.

[0166] However, unlike sputtering target 24, which has a passage 50 for ion beam 20, sputtering target 122 includes a target body 128 that defines a sputtering chamber 130 and for modifying or coating a surface 126 disposed within sputtering chamber 130 with sputtered particles (schematically shown in red shading).

[0167] The target body 128 has an ion beam entrance 132, or opening or port for the ion beam 20. The entrance 132 opens into the sputtering chamber 130. The cross-sectional shape of the ion beam entrance 132 (in a plane perpendicular to the beam axis 22) is again substantially circular (or ring-shaped). The ion beam entrance 132 is substantially centered about the beam axis 22. Alternatively, the cross-sectional shape of the ion beam entrance 132 can again be other shapes, such as a substantially oval or a rectangle with rounded corners. The cross-sectional area of ​​the ion beam entrance 132 (in a plane perpendicular to the beam axis 22) is substantially larger than the cross-sectional area bounded by the outer periphery of the ion beam 20 as the ion beam 20 enters the chamber 130. In one embodiment, the diameter of the ion beam entrance 132 (in a plane perpendicular to the beam axis 22) is substantially larger than the diameter of the outer periphery of the ion beam 20.

[0168] Beam axis 22 overlaps ion beam entrance 132 and sputtering chamber 130. Sputtering chamber 130 has a central chamber axis 134 that is substantially coaxial with beam axis 22. Sputtering chamber 130 is generally symmetrical about central chamber axis 134 and / or beam axis 22. Target body 128 can also be generally symmetrical about central chamber axis 134 and / or beam axis 22.

[0169] The sputtering chamber 130 is configured so that particles sputtered toward the object 136 having the surface 126 to be modified are generally sputtered toward a central region within the sputtering chamber 130 (where the surface to be modified can be located). The target surface 124 is in the form of or provided by at least one chamber or interior surface of the target body 128 that at least partially defines the chamber 130. In one embodiment, at least a portion of the sputtering chamber 130 intermediate the ion beam entrance 132 and an end or bottom 136 of the sputtering chamber 130 downstream (with respect to the ion beam 20) of the entrance 132 (as seen in FIGS. 10B and 10C ) tapers (reduced in size) in a direction toward the bottom 136 such that the target surface 124 is inclined with respect to the beam axis 22. The sputtering chamber 130 tapers from at or near the ion beam entrance 132 to at or near the bottom 126 opposite the entrance 132. Chamber 130 tapers at a substantially constant rate. Alternatively, similar to passageway 50, chamber 130 can taper at a non-constant rate, for example, chamber 130 can taper at a greater or lesser rate as chamber 130 approaches bottom 136.

[0170] In one embodiment, the chamber 130 has a substantially frusto-conical shape. The angle 138 defined between the inclined target surface 124 and the chamber axis 134 and / or the beam axis 22 is about 45 degrees or less. The angle 138 is preferably in the range of about 10 degrees to about 30 degrees. Alternatively, the chamber 130 can have another shape.

[0171] The sputtering target 122 includes one or more shields, or guards, or formations 140. In one embodiment, the sputtering target 122 includes two shields 140. The or each shield is configured to block or prevent the ion beam 20 from impinging on (or reaching) the surface 126 to be modified inside the sputtering chamber 130. In use, the shields 140 are positioned at least partially upstream (with respect to the ion beam 20) of the surface 126 being modified. Each shield 140 extends partially across the inlet 132 and extends both radially and circumferentially (with respect to the beam axis 22) to block or shield the surface 126 being modified from the ion beam 20 extending below and / or through the shield 140 (as shown in FIGS. 10B and 10C ). The target body 128 and shields 140 may be formed as a single piece.

[0172] Similar to the ion beam entrance 52 of the sputtering target 24, the cross-sectional shape (in a plane perpendicular to the beam axis) of the ion beam entrance 132, without the shield 140, is substantially circular (or ring-shaped). Alternatively, the cross-sectional shape of the ion beam entrance 132 can be other shapes, such as a substantially oval or a rectangle with rounded corners.

[0173] The sputtering apparatus 120 includes or is associated with a support mechanism for at least partially supporting (or holding or retaining) an object 136 having a surface 126 to be modified within the sputtering chamber 130. In one embodiment, the target body 128 has opposing openings or apertures 142, 144 through which the object 136 extends such that the object 136 extends at least partially across the sputtering chamber 130 and into the interior of the sputtering chamber. The apertures 142, 144 may be formed through respective shields 140.

[0174] In one embodiment, the ion source 18 and sputtering chamber 130 are movable relative to the surface 126 to be modified, e.g., in a direction 146 substantially perpendicular to the beam axis 22. The object 136 can be fed through the sputtering chamber 130 in a direction perpendicular to the beam axis. In one embodiment, the ion source 18 and sputtering target 122 are rotatable relative to the surface 126, e.g., about an axis perpendicular to the beam axis. For example, the object 136, including the surface 126, can be rotated relative to the stationary sputtering target, as indicated by arrow 148.

[0175] A method is described for sputtering particles onto a surface 126 to be modified of an object 136 using a sputtering apparatus 120 including a sputtering target 122 .

[0176] The target 136 is positioned within the sputtering chamber 130 such that the surface 126 extends at least partially across the sputtering chamber 130. In one embodiment, the target 136 extends through the openings 142, 144 in the target body 128 and / or the shield 140 and extends across the sputtering chamber 130. In one embodiment, the target 136 extends across the width of the sputtering chamber 130 in a direction substantially perpendicular to the beam axis.

[0177] As described above with reference to sputtering apparatus 14, a partial vacuum is created in a vacuum chamber that is defined at least in part by a housing (not shown) associated with and / or part of sputtering apparatus 120. Ion source 18 operates within the partial vacuum to generate or provide high-energy ion beam 20.

[0178] The hollow beam 20 is directed through an inlet 132 into a sputtering chamber 130 located directly below the ion source 18. The ion beam 20 impacts the chamber surfaces and sputters particles (shown diagrammatically in red shading) from the body 128 of the sputtering target 122 toward the surface 126.

[0179] In one embodiment, the sputtering chamber 130 is configured so that particles sputtered toward the surface 126 to be modified are generally sputtered toward a central region within the sputtering chamber 130. While some particles are backsputtered from the sputtering target toward the ion source 18, particles sputtered toward the surface 126 are generally sputtered from the sputtering target 122 in a sputtering direction extending radially relative to the beam axis 22, extending toward the beam axis 22. In one embodiment, the sputtering device 120 is positioned to sputter particles from the sputtering target 122 all around the ion beam 20.

[0180] 10A-10C, object 136 is an elongated conduit in the form of a cylindrical pipe or tube. Surface 126 is an arcuate or cylindrical outer surface. Alternatively, object 136 can be, for example, a substrate having a planar surface.

[0181] In one embodiment, the method includes moving or advancing the surface 126 to be modified relative to the ion beam 20 and / or the sputtering chamber 130. The surface 126 is moved relative to the sputtering chamber 130 in a direction 146 substantially perpendicular to the beam axis 22. In one embodiment, the object 136 is a pipe and is fed through an opening in a stationary target body. In another embodiment, the sputtering target 122 (and ion source 18) is moved along a stationary pipe.

[0182] In one embodiment, the method includes rotating the target relative to the sputtering chamber 130 to sputter material around the entire circumference of the target. In one embodiment, the target is rotated (as generally indicated by arrow 148) relative to a stationary target body 128. In another embodiment, the target body 128 (and ion source 18) can be rotated relative to a stationary target.

[0183] Sputtering equipment (Figure 11) An alternative sputtering apparatus 150 according to a third embodiment of the present disclosure will now be described with reference to Figure 11. The sputtering apparatus 150 includes an ion source 18 that provides a high-energy ion beam 20 as described above, and a sputtering target 152, as shown schematically in Figure 11. The ion source 18 (not shown in Figure 11) again operates under vacuum and is again positionable within a housing (not shown) relative to the sputtering target 152 to provide an ion beam 20 that impacts a target surface 154 of the sputtering target 152, sputtering particles from the sputtering target 152 towards the surface to be modified.

[0184] The sputtering target 152 is particularly useful for sputtering or depositing particles onto the inner surface 156 of a conduit, for example, the inner surface of a pipe 158, tube, or barrel.

[0185] Unlike sputtering apparatuses 14, 120, in which particles sputtered toward a surface generally extend in a sputtering direction radially from the sputtering target toward (relative to) the beam axis, sputtering apparatus 150 having sputtering target 152 generally sputters particles toward surface 156 in a sputtering direction radially extending away from beam axis 22 and relative to beam axis 22.

[0186] The sputtering target 152 includes a target body 160 configured or shaped to sputter particles from the target body 160 toward an inner surface 156 of a pipe 158 .

[0187] The target body 160 has at least one outer periphery that defines at least one target surface 154 .

[0188] In one embodiment, at least a portion of the circumference of the annular target body 160 intermediate the first end 162 and the second end 164 has a substantially frusto-conical shape such that the target surface 154 is inclined relative to the beam axis 22. Referring to FIG. 11 , the target body 160 has a substantially hollow frusto-conical shape. The sputtering target 152 and the ion source 18 are linearly arranged such that the target body axis 166 is substantially parallel to, and preferably parallel to, the beam axis 22, and more preferably substantially coaxial with, the beam axis 22. The angle 168 defined between the inclined target surface 154 and the target body axis 166 and / or the beam axis 22 is approximately 45 degrees or less. The angle 168 is preferably in the range of approximately 10 degrees to approximately 30 degrees. Alternatively, the target body 160 can have other shapes, such as a substantially conical shape. Or, the target body 160 need not have a circular cross section. Alternatively, the target body 160 can have, for example, a substantially oval cross-section or a rectangular cross-section with rounded corners.

[0189] Although the target body 160 is shown in FIG. 11 as being generally hollow, the target body 160 can alternatively be substantially solid.

[0190] In one embodiment, the circumferential cross-sectional area of ​​at least a portion of the target body 160 (in a plane perpendicular to the beam axis 22) increases in a direction away from the ion source 18 in the direction of the beam axis 22 as the ion beam 20 impinges on the target surface 154. The circumferential cross-sectional area increases in a direction away from the ion source 18 in the direction of the beam axis from a first cross-sectional area that is substantially smaller than the cross-sectional area of ​​the hollow portion of the ion beam 20 to a second cross-sectional area that is substantially larger than the cross-sectional area of ​​the circumferential cross-sectional area of ​​the ion beam 20. In one embodiment, the circumferential cross-sectional area of ​​the target body 160 increases from at or near a first end 162 of the target body 160 that is proximal to or at least closer to the ion source 18 to at or near a second end 164 of the target body 160 that is distal to or at least further from the ion source 18 (downstream of the first end 162 relative to the ion beam 20). In one embodiment, the diameter of the periphery of the target body 160 increases from at or near the first end 162 to at or near the second end 164 .

[0191] The cross-sectional area bounded by the periphery of the target body 160 increases at a substantially constant rate in the direction of the beam 20. Alternatively, the cross-sectional area defined by the periphery of the target body 160 can taper at a non-constant rate, for example, the target body 160 can taper at a greater or lesser rate as the target body 160 approaches the second end 164.

[0192] In one embodiment, the sputtering apparatus 150 is configured to extend at least partially inside a hollow object, such as a pipe 158, so that the beam axis 22 is generally aligned (substantially parallel or coaxial) with the central or longitudinal axis of the pipe. The size of the ion source 18 and / or sputtering target 152 can be scaled (up or down) based on the dimensions of the pipe.

[0193] In one embodiment, the sputtering target 152 is movable relative to the pipe 158 in a direction substantially parallel to the beam axis 22. The sputtering apparatus 150 is configured so that at least the sputtering target 152 is movable relative to and within the pipe in a direction substantially parallel to the beam axis 22. In one embodiment, the sputtering apparatus 150 is configured so that both the ion source 18 and the sputtering target 152 are movable relative to and within the pipe in a direction substantially parallel to the beam axis 22. Alternatively, the sputtering target 152 can move within the pipe relative to the ion source 18, which can be stationary.

[0194] A method is described for sputtering particles onto an interior surface 156 of a pipe 158 using a sputtering apparatus 150 including a sputter body 152.

[0195] A sputtering apparatus 150 having a sputtering target 152 is positioned so that the sputtering target 152 is at least partially disposed within a pipe 158 and / or extends into the pipe through an open end of the pipe. In one embodiment, the sputtering apparatus 150 is positioned so that the beam axis 22 is generally aligned (substantially parallel or coaxial) with the central or longitudinal axis of the pipe 158.

[0196] As described above with reference to the sputtering apparatus 14, 120, a partial vacuum is created in a vacuum chamber that is defined at least in part by a housing associated with and / or part of the sputtering apparatus 150. The pressure is reduced within at least a portion of the pipe 158. The ion source 18 operates to generate or provide a high-energy ion beam 20.

[0197] The hollow beam 20 is directed onto a sputtering target 152, which is located adjacent to or directly below the ion source 18, as shown in Figure 11. The ion beam strikes the target surface 154 and sputters particles (shown diagrammatically in red shading) from the body of the sputtering target 152 towards the inner surface 156 of a pipe 158.

[0198] Again, some particles are sputtered from the sputtering target 152 in a direction back towards the ion source 20, but the particles sputtered towards the surface are generally sputtered from the sputtering target 152 in a direction extending away from the beam axis 22 in a sputtering direction that extends radially relative to the beam axis 22. In one embodiment, the sputtering apparatus 150 is configured to sputter particles from the sputtering target 152 all around the ion beam 20.

[0199] The inner surface 156 of the pipe 158 is an arc-shaped, or more specifically, cylindrical, surface. Alternatively, the sputtering apparatus 150 with the sputtering target 152 can be used to sputter or deposit particles on a non-arcuate surface, for example, a generally planar surface. Alternatively, the sputtering apparatus 150 with the sputtering target 152 can be used to modify the outer surface of a pipe or other object.

[0200] In one embodiment, the method includes moving or advancing the surface 156 to be modified relative to the sputtering target 152. The surface is moved relative to the sputtering target 152 in a direction substantially parallel to the beam axis 22. In one embodiment, the sputtering target 152 is supported substantially coaxially within a pipe 158 and can traverse the entire length of the pipe 158 to treat the entire length of the pipe. In one embodiment, the ion source 20 can move with the sputtering target 152. In another embodiment, the sputtering target can move within the pipe 158, away from the ion source 18 or towards the ion source 18.

[0201] 12 shows an example of a hollow beam 20. As mentioned above, a hollow beam is a cylindrical ion beam with a circular cross section, with few or no ions flowing through the center of the cylinder and a maximum number of ions flowing through the walls of the cylinder.

[0202] The axis of the hollow beam is indicated at 22 and has an inner radius R. A stream of ions of width W is directed toward the target surface 48. As the ion stream travels toward the target surface 48, it exhibits an increasing beam width A away from the beam axis 22. The ion stream also exhibits an increasing beam width B toward the beam axis 22.

[0203] In one embodiment, the lateral profile of the current density of the hollow ion beam 20 follows two mirrored asymmetric Gaussians separated by a distance corresponding to the diameter 2R of the hollow beam 20. As the hollow ion beam propagates through space, Coulomb interactions within the ion beam result in beam broadening and wall broadening, also known as the space charge effect.

[0204] The beam has a width W as it leaves the ion source. The beam travels a distance H towards a sputter target 48. The sputter target 48 has a shape defined by an angle δ, a width w, and a height h. In one embodiment, a majority of the ion beam is stopped by the sputter target 48 so as not to directly damage or modify the substrate.

[0205] In one embodiment, the relationship between current and ion beam 20 spread is a non-linear function of chamber pressure, ion energy, ion mass, ion beam current density, and travel distance H.

[0206] The divergence results in an increase in beam width A away from the beam axis and an increase in beam width B towards the beam axis. The divergence angle of A is denoted as α. The divergence angle of B is denoted as β.

[0207] In one embodiment, estimates of the corresponding divergence angles α and β are obtained by analytical approximation or by using finite element modeling software and used to calculate A and B. A=(H-((W+Htanβ)tanδ)) / (tanδ+cotα) B=Htanβ

[0208] The tilt δ of the sputter target 48 is related to these values ​​and the height of the sputter target as follows: d=(A+W+B)tanδ

[0209] The maximum inner diameter of the sputtering target is the inner diameter r of the hollow ion beam when it strikes the target. a≦r≦RB

[0210] where a is the minimum radius of the deposition area (always a positive number). The particle outlet of the sputtering target has a width or radius of size a. In one embodiment, this radius is user-defined.

[0211] The minimum height of the sputter target, h, is h ≥ d is.

[0212] The minimum width of the sputter target part, w, is w≧A+W+B is.

[0213] The above equations are appropriate for the embodiment of the sputtering apparatus shown in Figures 10A-10C, where the sputtering direction extends towards the beam axis. Naturally, the same equations are appropriate for the embodiment of the sputtering apparatus shown in Figure 11, where the sputtering direction extends away from the beam axis.

[0214] If the angle of the sputtering target body is different on both sides of the central axis, such as when using different materials to control the composition of the resulting deposition layer, the dimensions will not all be the same. To calculate the shape of both sides of the sputtering target for materials A and B, the distance r is different on both sides (r on side A). A and B side r B ).r A and r B is the height d corresponding to the parameters d and δ on the A and B sides, respectively. A and d B and gradient δ A and δ B It is a function of

[0215] Under these conditions, using a hollow beam can potentially save power by the ratio (W+r)^2 / ((W+r)^2-r^2). For example, for W=1cm and r=1cm, using a hollow beam uses approximately 33% less power than a full beam for the same sputtering rate. Additionally, the surface is not affected by direct beam exposure.

[0216] The experimental results are shown below. The operating pressure for all experiments was 2 to 7 × 10 -4 mbar, base pressure is approximately 5 × 10 -6 It was mbar.

[0217] Figures 13 and 14 show an example of copper deposition on glass. An elongated ion source such as that shown in Figure 8 was used with a copper target having the same profile as that shown in Figures 1 and 2B.

[0218] The ion source length was 15.7 cm, and the hollow beam width was 2.4 cm. The overall design of the vacuum chamber was the same as that shown in Figure 2B. The distance between the target and the ion source was 1.35 cm. The distance between the bottom of the sputtering target and the soda-lime glass substrate being modified was 0.5 mm.

[0219] Plasma was generated in the ion source by applying a DC voltage of 1 kV to the anode and cathode of the ion source. Voltages of 7.5, 10, 12, 12.5, and 15 kV were used to accelerate positive ions toward the sputter target. Scan speeds of 1.25, 2.5, 5, and 7.5 mm / min (using a geared stepper motor allowing a resolution of ±0.1 mm / min) were used. Various combinations were tested, and deposition thicknesses were measured using an Olympus portable X-ray fluorescence system.

[0220] The thickness measurements were calibrated using an atomic force microscope. For AFM measurements, a removable mask was placed on the glass before deposition to provide a sharp edge for thickness measurements.

[0221] Figure 13 shows the variation of deposition thickness over 12 cm of a uniformly deposited substrate for different scanning speeds (velocities) at a constant accelerating voltage of 10 kV. Figure 14 shows the variation of deposition thickness over 12 cm of a uniformly deposited substrate for different scanning speeds (velocities) and different accelerating voltages at a speed of 5 mm / min. The vertical error bars correspond to the standard deviation of the thickness across the surface.

[0222] Figure 15 shows an example of titanium deposition on glass.

[0223] An elongated ion source such as that shown in Figure 8 was used with a sputtering target having the same profile as that shown in Figures 1 and 2B.

[0224] The ion source length was 15.7 cm, and the hollow beam width was 2.4 cm. The sputter target, made of titanium for this experiment, had a removable surface exposed to the ion beam. The overall design of the vacuum chamber was the same as that shown in Figure 2B. The distance between the target and the ion source was 1.35 cm. The distance between the bottom of the sputter target and the soda-lime glass substrate being modified was 0.5 mm.

[0225] Plasma was generated in the ion source by applying a DC voltage of 1 kV to the anode and cathode of the ion source. A voltage of 5 kV was used to accelerate positive ions toward the sputter target. Scan speeds of 2, 3, 5, and 7.5 mm / min (using a geared stepper motor with a resolution of ±0.1 mm / min) were used. Various combinations were tested, and the deposition thickness was measured using an Olympus portable X-ray fluorescence system.

[0226] The measurements were calibrated using an atomic force microscope. For the AFM measurements, a removable mask was placed on the glass before deposition to provide a sharp edge for thickness measurement.

[0227] Figure 15 shows the variation in deposition thickness over 12 cm of a uniformly deposited substrate for different scan speeds (velocities) at a constant accelerating voltage of 10 kV. The vertical error bars correspond to the standard deviation of the thickness across the surface.

[0228] FIG. 16 shows an example of copper deposition on the outside of a plastic tube.

[0229] A circular ion source such as that shown in Figure 3A was used with a copper target of a design corresponding to Figures 10A, 10B, and 10C.

[0230] A plasma was generated in the ion source by applying a DC voltage of 1 kV to the anode and cathode of the ion source. A voltage of 10 kV was used to accelerate positive ions toward the sputter target. Portable X-ray fluorescence was used to confirm the deposition thickness along the entire length of the pipe. Thicknesses of 39 ± 25 nm and 4 ± 3 nm were deposited at pull rates of 2.5 mm / min and 5 mm / min and an acceleration voltage of 5 kV.

[0231] These were measured in the same manner as above. It is expected that further optimization of the process will result in better deposition rates and uniformity of the deposited films.

[0232] The foregoing description of the invention includes preferred forms of the invention, and modifications may be made thereto without departing from the scope of the invention, which is defined by the appended claims.

Claims

1. An ion beam sputtering apparatus, an ion source configured to generate a hollow ion beam along a beam axis located at a hollow portion of the hollow ion beam; a sputtering target having a target body defining at least one target surface, the target body containing sputterable particles, the target body being positioned relative to the ion source such that the ion beam impacts the at least one target surface to sputter particles from the target body toward a surface of an object to be modified; Including, the target body is shaped such that particles sputtered toward the surface to be modified are generally sputtered from the sputtering target in a sputtering direction that extends radially relative to the beam axis, the sputtering direction extending away from the beam axis; the target body axis is substantially coaxial with the beam axis; a cross-sectional area of ​​at least a portion of the target body in a plane perpendicular to the beam axis increases in a direction away from the ion source in the direction of the beam axis from a first cross-sectional area substantially smaller than a cross-sectional area of ​​a hollow portion of the hollow ion beam to a second cross-sectional area substantially larger than a cross-sectional area of ​​a periphery of the hollow ion beam.

2. The apparatus of claim 1 , wherein the cross-sectional area of ​​the outer periphery of the target body increases at a substantially constant rate in the direction of the hollow ion beam.

3. 3. The apparatus of claim 1, wherein the object having the surface to be modified is movable relative to the ion source and the sputtering target.

4. 4. The apparatus of claim 3, wherein the object having the surface to be modified is movable from atmospheric pressure into a vacuum chamber in which at least a partial vacuum exists, the vacuum chamber being at least partially defined by a housing.

5. 5. The apparatus of claim 1, wherein the sputtering target is made of a single material such that the at least one target surface provides the sputterable particles.

6. 5. The apparatus of claim 1, wherein the sputtering target comprises at least a first material and a second material, the first material being different from the second material.

7. The apparatus of claim 6 , wherein the first material and the second material are positioned at substantially the same angle of incidence relative to the hollow ion beam.

8. 7. The apparatus of claim 6, wherein the first material is positioned at a first angle of incidence with respect to the hollow ion beam and the second material is positioned at a second angle of incidence with respect to the hollow ion beam, the first angle of incidence being different from the second angle of incidence.

9. 1. A method for sputtering particles onto an inner surface of an arcuate surface of a conduit, comprising: Positioning the sputtering apparatus of any one of claims 1 to 8 so that a sputtering target is at least partially located inside the conduit; creating at least a partial vacuum within a vacuum chamber defined at least in part by a housing associated with and / or part of the sputtering apparatus; generating a hollow ion beam using the ion source; directing the hollow ion beam toward a target surface of the sputtering target to sputter particles onto the inner surface; A method comprising:

10. 1. A method for sputtering particles onto a surface to be modified, comprising: positioning a sputtering target adjacent to an ion source of a sputtering apparatus, the target having a target body defining at least one target surface; creating at least a partial vacuum within a vacuum chamber defined at least in part by a housing associated with and / or part of the sputtering apparatus; generating a hollow ion beam using an ion source of the sputtering device; directing the hollow ion beam so that an ion beam axis is substantially coaxial with an axis of the target body and so that a cross-sectional area of ​​at least a portion of the target body in a plane perpendicular to the beam axis increases in a direction away from the ion source, so that the hollow ion beam impacts the at least one target surface to sputter particles onto the surface to be modified; Including, The method of claim 1, wherein the target body is shaped such that particles sputtered toward the surface to be modified are generally sputtered from the sputtering target in a sputtering direction that extends radially relative to the beam axis, and the sputtering direction extends away from the beam axis.

11. The method of claim 10 , further comprising sliding the modified surface relative to the ion source and the sputtering target.

12. The method of claim 11 , further comprising sliding the modified surface from atmospheric pressure into the vacuum chamber.

13. 13. The method of any one of claims 9 to 12, wherein the sputtering target is comprised of a single material such that the at least one target surface provides sputterable particles.

14. 13. The method of any one of claims 9 to 12, wherein the sputtering target comprises at least a first material and a second material, the first material being different from the second material.

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