High Frequency Power Return Path

Abstract

The embodiments presented herein are directed to radio frequency (RF) grounding in a processing chamber. In one embodiment, a dielectric plate is disposed between a chamber body and a lid of the processing chamber. The dielectric plate extends laterally into a space defined by the chamber body and the lid. A substrate support is disposed in the space opposite the lid. The substrate support includes a support body disposed on a stem. The support body includes a central region and a peripheral region. The peripheral region is radially outward from the central region. The central region has a thickness less than that of the peripheral region. A flange is disposed adjacent to a bottom surface of the peripheral region. The flange extends radially outward from an outer edge of the peripheral region. A bellows is disposed on the flange and configured to sealingly couple to the dielectric plate.

Description

[Technical Field]

[0001] TECHNICAL FIELD

[0001] Embodiments of the present disclosure relate generally to an apparatus, and more particularly to an apparatus for facilitating deposition of a film of uniform thickness on a substrate. [Background technology]

[0002]

[0002] Chemical vapor deposition (CVD) and plasma-enhanced chemical vapor deposition (PECVD) are processes used to deposit films on substrates, such as semiconductor substrates. CVD is generally accomplished by introducing process gases into a processing chamber containing the substrate therein. The process gases are directed into the processing volume of the processing chamber through a gas distribution assembly. The gas distribution assembly is positioned within the processing volume opposite the substrate, which is positioned on a pedestal.

[0003] Radio frequency (RF) power can be used to activate process gases within a processing chamber. The RF power has a tendency to return to the power source. In some cases, arcing can occur from the RF power within the processing chamber, potentially damaging the chamber and its components. Ground paths attempt to direct the RF power away from the components of the processing chamber to prevent damage to the processing chamber and reduce the occurrence of arcing within the processing chamber. However, current ground path designs are complex and prone to arcing within the processing chamber.

[0004]

[0004] Therefore, there is a need for an improved RF return path design. Summary of the Invention

[0005] In one embodiment, an apparatus is provided that includes a chamber body and a lid defining a space therein. A dielectric plate is disposed between the chamber body and the lid. The dielectric plate extends laterally into the space. A substrate support is disposed in the space opposite the lid. The substrate support includes a support body disposed on a stem. The support body includes a central region and a peripheral region radially outward from the central region. The central region has a thickness that is less than a thickness of the peripheral region. The substrate support also includes a flange adjacent a bottom surface of the peripheral region. The flange extends radially outward from an outer edge of the peripheral region. A bellows is disposed on the flange and configured to sealingly couple to the dielectric plate.

[0006]

[0006] In another embodiment, an apparatus is provided that includes a chamber body and a lid defining a space therein. A dielectric plate is disposed between the chamber body and the lid. The dielectric plate extends laterally into the space. A channel is formed through the lid adjacent to the dielectric plate. The channel surrounds at least a portion of the space. A substrate support is disposed within the space opposite the lid. The substrate support includes a support body disposed on a stem. The support body includes a central region and a peripheral region radially outward from the central region. The central region has a thickness that is less than a thickness of the peripheral region. A flange is disposed adjacent a bottom surface of the peripheral region. The flange extends radially outward from an outer edge of the peripheral region. A bellows is disposed on the flange and configured to sealingly couple the flange to the dielectric plate.

[0007]

[0007] In yet another embodiment, an apparatus is provided that includes a chamber body and a lid defining a space therein. A dielectric plate is disposed between the chamber body and the lid. The dielectric plate extends laterally into the space. A channel is formed through the lid adjacent to the dielectric plate. The channel surrounds at least a portion of the space. A substrate support is disposed in the space opposite the lid. The substrate support includes a support body disposed on a stem. The support body includes a central region and a peripheral region radially outward from the central region. The central region has a thickness less than a thickness of the peripheral region. A flange is disposed adjacent a bottom surface of the peripheral region. The flange extends radially outward from an outer edge of the peripheral region. A bellows is disposed on the flange. The bellows is coupled to the flange and the plate. An opening is formed through the bellows. When the bellows is compressed, the opening is sealed closed.

[0008]

[0008] So that the above-mentioned features of the present disclosure may be understood in detail, a more particular description of the present disclosure, briefly summarized above, will be had by reference to embodiments. Some embodiments are illustrated in the accompanying drawings. It should be noted, however, that since the present disclosure may admit of other equally effective embodiments, the accompanying drawings illustrate only exemplary embodiments and therefore should not be considered as limiting the scope of the embodiments. [Brief explanation of the drawings]

[0009] [Figure 1] 1 shows a schematic cross-sectional view of a processing chamber according to one embodiment. [Figure 2A]

[0010] FIG. 1 shows a schematic top view of a grounding arrangement according to one embodiment. [Figure 2B]

[0011] FIG. 1 shows a schematic side view of a grounding arrangement according to one embodiment. [Figure 3A]

[0012] 1 shows a schematic cross-sectional view of a bellows according to one embodiment. [Figure 3B]

[0013] 1 shows a schematic cross-sectional view of a bellows arrangement according to one embodiment. [Figure 4]

[0014] 1 shows a schematic cross-sectional view of a processing chamber according to one embodiment. [Figure 5A]

[0015] 1 shows a schematic cross-sectional view of a processing chamber according to one embodiment. [Figure 5B]

[0016] 1 shows a schematic top view of a grounding strip according to one embodiment. [Figure 5C]

[0017] 1 shows a schematic top view of a grounding strip according to one embodiment. [Figure 6]

[0018] 1 shows a schematic cross-sectional view of a processing chamber according to one embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010]

[0019] For ease of understanding, where possible, the same reference numerals have been used to designate identical elements that are common to multiple figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0011]

[0020] The embodiments presented herein are directed to radio frequency (RF) grounding in a processing chamber. In one embodiment, a dielectric plate is disposed between a chamber body and a lid of the processing chamber. The dielectric plate extends laterally into a space defined by the chamber body and the lid. A substrate support is disposed in the space opposite the lid. The substrate support includes a support body disposed on a stem. The support body includes a central region and a peripheral region. The peripheral region is radially outward from the central region. The central region has a thickness less than that of the peripheral region. A flange is disposed adjacent to a bottom surface of the peripheral region. The flange extends radially outward from an outer edge of the peripheral region. A bellows is disposed on the flange and configured to sealingly couple to the dielectric plate.

[0012]

[0021] 1 shows a schematic cross-sectional view of a processing chamber 100 according to one embodiment. The processing chamber 100 includes a chamber body 102 and a lid 104 disposed on the chamber body 102. The chamber body 102 and the lid 104 define an interior space 110. A bottom 148 of the chamber body 102 faces the lid 104.

[0013]

[0022] The lid 104 includes a face plate 106 having a plurality of holes 134 formed therethrough. A gas source 130 is coupled to the lid 104. Gas from the gas source 130 flows into a plenum 132 defined at least in part by the lid 104 and the face plate 106. The plenum 132 is fluidly connected to the volume 110 via the plurality of holes 134. The plurality of holes 134 in the face plate 106 facilitates a substantially uniform distribution of gas within the volume 110.

[0014]

[0023] A substrate support 105 (e.g., a pedestal) is disposed within the space 110 opposite the lid 104. The substrate support 105 includes a support body 112 and a stem 108. The stem 108 extends laterally through a bottom 148 of the chamber body 102. The stem 108 is substantially perpendicular to the bottom 148. A support surface 150 of the support body 112 faces the lid 104. The bottom 148 is substantially parallel to the face plate 106.

[0015]

[0024] The support body 112 is disposed on the stem 108. The support body 112 includes a first portion 151 and a second portion 152. The first portion 151 is substantially coaxial with the stem 108 and includes a support surface 150. The first portion 151 is substantially parallel to the face plate 106 and the bottom portion 148. The second portion 152 is connected to the first portion 151 and extends laterally from the first portion 151 toward the bottom portion 148. The second portion 152 is cylindrical and substantially perpendicular to the first portion 151, surrounding at least a portion of the stem 108.

[0016]

[0025] A bottom surface 156 of the first portion 151 faces the bottom 148 of the chamber body 102. An inner surface 158 of the second portion 152 faces the stem 108. A bottom surface 154 of the second portion 152 faces the bottom 148 of the chamber body 102. The bottom surface 154 of the second portion 152 is closer to the bottom 148 of the chamber body 102 than the bottom surface 156 of the first portion 151. In some embodiments, the support body 112 is a unitary member.

[0017]

[0026] The outer surface 144 of the support body 112 is the radially outer surface of the support body 112 and faces the chamber body 102. The outer surface 144 faces outward from the stem 108 and is substantially perpendicular to the bottom 148 and support surface 150 of the chamber body 102. A ground plate is coupled to the bottom surface 156 of the first portion 151 and the inner surface 158 of the second portion 152. That is, the ground plate 146 is disposed between the support body 112 and the stem 108. The ground plate 146 is fabricated from a conductive material. In another example, the ground plate 146 includes a central opening through which the stem 108 is disposed, allowing contact between the stem 108 and the bottom of the first portion 151.

[0018]

[0027] A conductive rod 114 is disposed within or extends through the stem 108. The conductive rod 114 is coupled to a grounding plate 146. The conductive rod 114 is also coupled to a ground external to the stem 108. A bottom surface 142 of the grounding plate 146 along with a second portion 152 of the support body 112 is substantially parallel to and coplanar with a bottom surface 154 of the second portion 152.

[0019]

[0028] The substrate support 105 and the ground plate 146 include a central region 138 and a peripheral region 140. The central region 138 includes at least a portion of the first portion 151. The peripheral region 140 includes at least a portion of the second portion 152. The central region 138 and the peripheral region 140 each include at least a portion of the support body 112 and the ground plate 146. The peripheral region 140 is radially outward of the central region 138.

[0020]

[0029] The flange 118 is disposed along the bottom surface 142 of the grounding plate 146 within the peripheral region 140. The flange 118 is substantially parallel to the support surface 150. The flange 118 extends along the bottom surface 142 of the grounding plate 146 and the bottom surface of the second portion 152. The flange 118 extends radially outward from the outer surface 144. The flange 118 may be coupled to the bottom surface 142 of the grounding plate 146, the bottom surface 154 of the second portion 152, or both. The flange 118 is fabricated from a conductive material such as a metal, for example, aluminum.

[0021]

[0030] The bellows 120 is disposed on a radially outward flange 118 of the support body 112. In one example, the bellows 120 forms a circle surrounding the support body 112. The bellows 120 is positioned on an upper surface 160 of the flange 118. The upper surface 160 is opposite the bottom 148 of the chamber body 102 and faces the lid 104. The bellows 120 is adjacent to the outer surface 144 of the support body 112 and extends laterally from the flange 118 toward the lid 104. The bellows 120 is positioned radially outward of, and optionally spaced apart from, a second portion 152 of the support body 112. The upper surface 128 of the bellows 120 is substantially parallel to the support surface 150.

[0022]

[0031] Bellows 120 includes a return path between top surface 128 and flange 118. The return path provides a route for radio frequency (RF) power to reach ground. That is, bellows 120 provides a conductive path from its top surface 128 to flange 118. Bellows 120 provides an efficient path to ground for RF power. Advantageously, bellows 120 has a simple design that allows for easy replacement, thereby reducing maintenance time and associated costs. To facilitate the flow of RF power, bellows 120 may be formed from or include a conductive material, such as a metal. In one example, bellows 120 includes a metal sheet, a metal mesh, or a metal conductor embedded in another material. In such an example, the metal may include aluminum.

[0023]

[0032] The plate 122 is disposed between the lid 104 and the chamber body 102. The plate 122 is ring-shaped and surrounds at least a portion of the space 110. A bottom surface 136 of the plate 122 is substantially parallel to the top surface 128 of the bellows 120. The plate 122 is fabricated from an insulating material to insulate the chamber body 102 and the lid 104. For example, the plate 122 is fabricated from a dielectric or ceramic-containing material.

[0024]

[0033] A channel 124 is formed through the lid 104. The channel 124 is adjacent to the plate 122 and surrounds at least a portion of the space 110. The channel 124 may be in fluid communication with an exhaust pump (not shown). The channel 124 allows gases and particles to be removed from the space 110 to prevent damage to and / or contamination of films deposited on the substrate.

[0025]

[0034] An opening 126 is formed through the chamber body 102. The opening 126 allows a substrate (not shown) to be loaded onto a support surface 150 of the substrate support 105 between the plate 122 and the chamber body 102. An actuator 116 is coupled to the stem 108 of the substrate support 105. The actuator 116 is configured to move the substrate support 105 between a lowered position and a raised position within the space 110. As shown in FIG. 1 , the substrate support 105 is disposed in the lowered position such that the bellows 120 does not contact the plate 122.

[0026]

[0035] In operation, the substrate support 105 is moved to a lowered position by the actuator 116. A substrate is loaded onto the support surface 150 through the opening 126. The actuator 116 moves the substrate support 105 to a raised position. In the raised position, the top surface 128 of the bellows 120 contacts the bottom surface 136 of the plate 122. A seal is created between the top surface 128 of the bellows 120 and the bottom surface 136 of the plate 122. The seal substantially prevents gas from exiting the space 110 through the opening 126. When the substrate support 105 is in the raised position, the bellows 120 can be compressed between the plate 122 and the flange 118.

[0027]

[0036] Gas is introduced from gas source 130 through face plate 106 into volume 110. Radio frequency (RF) power is used to activate the gas in volume 110. The activated gas is used to deposit material on a substrate. An RF return path for the RF power can be from bellows 120 to ground through flange 118, ground plate 146, and conductive rod 114. Advantageously, the RF return path can substantially reduce the occurrence of RF leakage, parasitic plasma formation, and arcing in volume 110.

[0028]

[0037] 2 shows a schematic top view of a grounding arrangement 200 according to one embodiment. The grounding arrangement 200 can be used as a replacement for the bellows 120 (FIG. 1). The grounding arrangement 200 includes a plurality of conductive loops 202 disposed around the support body 112. The plurality of conductive loops 202 can be disposed around the support body 112 as a replacement for the bellows 120.

[0029]

[0038] The plurality of conductive loops 202 are disposed radially outward of the support body 112. Each conductive loop of the plurality of conductive loops 202 is disposed on the flange 118. When the substrate support 105 is moved to the raised position, the plurality of conductive loops 202 are compressed against the bottom surface 136 of the plate 122. The plurality of conductive loops 202 maintain an RF return path through the flange 118, the ground plate 146, and the conductive rod 114. That is, RF current flows through the plurality of conductive loops 202, to the flange 118, to the ground plate 146, and to the conductive rod 114.

[0030]

[0039] 2B shows a schematic side view of the grounding arrangement 200 according to one embodiment. Each of the conductive loops 202 is coupled to a plate 204 via a first fastener 208. Each plate 204 is coupled to the flange 118 via a second fastener 206. That is, the ends of the conductive loops 202 are disposed between and in contact with the plate 204 and the flange 118. In one embodiment, the first fasteners 208 and the second fasteners 206 are fabricated from a conductive material such as steel or another alloy. The multiple conductive loops 202 are symmetrically arranged around the support body 112 to provide a symmetric RF return path within the processing chamber 100. For example, the angular spacing between each of the multiple conductive loops 202 is between about 20 degrees and about 60 degrees, e.g., about 30 degrees.

[0031]

[0040] 3A shows a schematic cross-sectional view of a bellows 120 according to one embodiment. The bellows 120 is bonded to the flange 118. An inner side 304 of the bellows 120 is adjacent to the outer surface 144 of the support body 112. An outer side 306 of the bellows 120 faces the inner side 304. The outer side 306 is substantially aligned with the outer edge of the flange 118.

[0032]

[0041] When the substrate support 105 moves to the raised position, the bellows 120 is compressed in a direction from the top surface 128 of the bellows 120 toward the flange 118. That is, as the bellows 120 is compressed, the height 302 of the bellows 120 decreases. When the substrate support 105 moves to the lowered position, the height 302 of the bellows 120 increases and returns to its original height.

[0033]

[0042] Figure 3B shows a schematic cross-sectional view of a bellows arrangement 300 according to one embodiment. Bellows arrangement 300 is similar to bellows 120 discussed above with respect to Figures 1 and 3A. However, the bellows arrangement of Figure 3B includes a conductive O-ring 312 disposed along the top surface 128 of bellows 120.

[0034]

[0043] A channel 310 is formed in the top surface 128 of the bellows 120. A conductive O-ring 312 is disposed in the channel 310. At least a portion of the conductive O-ring 312 extends into the channel 310. At least a portion of the conductive O-ring 312 extends above the top surface 128 of the bellows 120.

[0035]

[0044] The conductive O-ring 312 provides a conductive point on the bellows 120 through which RF current passes to the RF return path. The conductive O-ring 312 allows increased flow of RF current to and through the RF return path (e.g., bellows 120 and / or 300). Thus, the conductive O-ring 312 further improves RF grounding and further reduces the occurrence of parasitic plasma and arcing within the processing chamber 100. In one example, the conductive O-ring 312 completely surrounds the support body 112.

[0036]

[0045] Figure 4 shows a schematic cross-sectional view of a processing chamber 400 according to one embodiment. Processing chamber 400 is similar in many respects to processing chamber 100 discussed with respect to Figure 1. However, bellows 402 of processing chamber 400 differs from bellows 120 of processing chamber 100.

[0037]

[0046] Bellows 402 is disposed on flange 118 adjacent support body 112. However, bellows 402 is bonded to bottom surface 136 of plate 122. That is, bellows 402 is bonded to flange 118 and bottom surface 136 of plate 122. Bellows 402 may be bonded to bottom surface 136 via one or more fasteners, adhesive, or another suitable manner.

[0038]

[0047] A slit 404 is formed through the bellows 402. The slit 404 extends an angular distance that allows a substrate (not shown) to be loaded through the slit 404 onto the support surface 150. When the substrate support 105 moves to the raised position, the bellows 402 compresses between the plate 122 and the flange 118. The slit 404 also compresses within the bellows 402. Thus, the slit 404 is sealed when the substrate support 105 is in the raised position.

[0039]

[0048] 5A shows a schematic cross-sectional view of a processing chamber 500 according to one embodiment. The processing chamber 500 is similar in many respects to the processing chamber 100 discussed with respect to FIG. 1. However, the processing chamber 500 includes a grounding strip 502 disposed within the space 110. The grounding strip 502 includes a first end 504 and a second end 506 radially outward from the first end 504.

[0040]

[0049] The grounding strip 502 is disposed around the stem 108. The grounding strip 502 contacts the grounding plate 146 adjacent to the stem 108. In some embodiments that can be combined with one or more of the embodiments described above, the grounding strip 502 is physically and electrically coupled to the grounding plate 146. That is, a first end 504 of the grounding strip 502 is adhered to the grounding plate 146. A second end 506 of the grounding strip 502 is physically and electrically coupled to the chamber body 102. In some embodiments that can be combined with one or more of the embodiments described above, the second end 506 of the grounding strip 502 is coupled to the bottom 148 of the chamber body 102. The second end 506 of the grounding strip 502 is coupled to ground to provide a ground path for RF power within the volume 110. When the substrate support 105 is in the lowered position, the grounding strip 502 forms concentric rings, such as a coil.

[0041]

[0050] When the substrate support 105 moves to the raised position, the first end 504 of the grounding strip 502 maintains contact with the grounding plate 146 and moves with the substrate support 105. However, the second end 506 of the grounding strip 502 is fixed and maintains contact with the chamber body 102. That is, when the substrate support 105 is in the raised position, the grounding strip 502 forms a cone shape that surrounds the stem 108. The grounding strip 502 provides a continuous path to ground for the RF power in the volume 110. Thus, the grounding strip 502 can substantially reduce the occurrence of parasitic plasma and arcing in the processing chamber 500. In one embodiment, which can be combined with one or more embodiments described above, the conductive rod 114 is not included because the grounding strip 502 provides a sufficient return path for the RF power.

[0042]

[0051] 5B shows a schematic top view of the grounding strip 502 according to one embodiment. The grounding strip 502 is arranged in a spiral shape around the stem 108 (FIGS. 1, 4, and 5A). When the substrate support 105 is moved to the raised position, the grounding strip 502 forms a spiral shape between the substrate support 105 and the bottom 148 of the chamber body 102.

[0043]

[0052] 5C shows a schematic diagram of a grounding strip 503 according to one embodiment. The grounding strip 503 may be used anywhere in this disclosure where the grounding strip 502 is described as being used. The grounding strip 503 includes multiple grounding paths 510, 512, 514, 516, such as a first path 510, a second path 512, a third path 514, and a fourth path 516. The multiple grounding paths are intertwined around a central point 534, which is also the central point of the stem 108 (FIGS. 1, 4, and 5A).

[0044]

[0053] First ends 520, 524, 528, and 532 of the first, second, third, and fourth paths 510, 512, 514, and 516, respectively, are adjacent to a center point 534. The first, second, third, and fourth paths 510, 512, 514, and 516 spiral away from the center point 534 to second ends 518, 522, 526, and 530, respectively. The first ends 520, 524, 528, and 532 are coupled to a ground plate on the substrate support, such as ground plate 146 (FIGS. 1, 4, and 5A). The second ends 518, 522, 526, and 530 are coupled to the chamber body 102. In one example, each of the first ends 520, 524, 528, and 532 are spaced apart an equal angular distance from one another. Additionally or alternatively, second ends 518, 522, 526, and 530 are each spaced an equal angular distance apart from one another.

[0045]

[0054] Ground paths 510, 512, 514, and 516 are shorter than grounding strip 502. Thus, ground paths 510, 512, 514, and 516 may provide improved return paths for RF power within the space. Because multiple return paths are provided for RF power, ground paths 510, 512, 514, and 516 may also further reduce the occurrence of parasitic plasma and arcing within space 110.

[0046]

[0055] Figure 6 shows a schematic cross-sectional view of a processing chamber 600 according to one embodiment. The processing chamber 600 is similar in many respects to the processing chamber 100 discussed with respect to Figure 1. However, the processing chamber 600 includes one or more grounding blocks 602 and one or more grounding straps 604.

[0047]

[0056] One or more grounding blocks 602 are disposed on the inner surface of the chamber body 102 facing the space 110. When the substrate support 105 is in the raised position, the one or more grounding blocks 602 are disposed below the support body 112. One or more grounding straps 604 are connected to the grounding blocks 603. The one or more grounding straps 604 are also connected to the grounding plate 146 of the substrate support 105. The chamber body 102 is connected to earth.

[0048]

[0057] The one or more grounding straps 604 are fabricated from a flexible, conductive material, such as an aluminum strap. The one or more grounding straps 604 are flexible, allowing constant contact with the grounding plate 146 while the substrate support 105 moves through the volume 110. The one or more grounding straps 604 are conductive and provide a return path for RF power within the volume 110. The grounding path is similar to that of the processing chamber 100 of FIG. 1 , except that the grounding path travels from the grounding plate 146 through the one or more grounding straps 604 to the grounding block 602 and the grounded chamber body 102. The conductive rod 114 in the stem 108, according to one embodiment, is not included in the grounding path and / or the RF power path. Advantageously, the one or more grounding blocks 602 and the one or more grounding straps 604 provide an efficient grounding path for RF power, which can result in reduced downtime and cost savings during maintenance of the processing chamber 600.

[0049]

[0058] Although the embodiments described herein are described with respect to a substrate support having a first portion and a second portion with different vertical thicknesses, it is contemplated that substrate supports having other dimensions, including a uniform thickness, may benefit from embodiments of the present disclosure.

[0050]

[0059] While the above description is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, the scope of which is determined by the claims that follow.

Claims

1. 1. An apparatus comprising: a chamber body and a lid defining a space therein; a dielectric plate that physically separates and electrically insulates the chamber body and the lid; a substrate support positioned in the space opposite the lid, a support body disposed on the stem, the support body including a central region and a peripheral region radially outward of the central region, the central region having a thickness less than a thickness of the peripheral region; a grounding plate disposed between the support body and the stem; a flange adjacent a bottom surface of the peripheral region and connected to the grounding plate, the flange extending radially outward from an outer edge of the peripheral region; a substrate support comprising: a conductive rod extending through the stem, the conductive rod being connected to the grounding plate and adapted to be connected to earth; a grounding arrangement disposed around the support body and coupled to the grounding plate, the grounding arrangement being operable to physically contact the dielectric plate; 1. An apparatus comprising:

2. one or more grounding blocks positioned within the space and disposed on the chamber body; one or more grounding straps connected to the one or more grounding blocks and the grounding plate; The apparatus of claim 1 further comprising:

3. 1. An apparatus comprising: a chamber body and a lid defining a space therein; a dielectric plate that physically separates and electrically insulates the chamber body and the lid; a channel formed through the lid adjacent the dielectric plate, the channel surrounding at least a portion of the space; a substrate support positioned in the space opposite the lid, a support body disposed on the stem, the support body including a central region and a peripheral region radially outward of the central region, the central region having a thickness less than a thickness of the peripheral region; a grounding plate disposed between the support body and the stem; a flange disposed adjacent a bottom surface of the peripheral region and coupled to the grounding plate, the flange extending radially outward from an outer edge of the peripheral region; a substrate support comprising: a conductive rod extending through the stem, the conductive rod being connected to the grounding plate and adapted to be connected to earth; a plurality of conductive loops disposed on the flange and configured to hermetically couple the flange to the dielectric plate; 1. An apparatus comprising:

4. one or more grounding blocks positioned within the space and disposed on the chamber body; one or more grounding straps connected to the one or more grounding blocks and the grounding plate; The apparatus of claim 3 further comprising:

5. 4. The apparatus of claim 3, further comprising a grounding strip having a first end and a second end, the first end coupled to the grounding plate adjacent the stem and the second end coupled to the chamber body.

6. further comprising a plurality of grounding strips, each grounding strip having a first end and a second end; each of the first ends is coupled to the ground plate adjacent the stem; Each of the second ends is coupled to the chamber body.

4. The apparatus of claim 3.

7. 1. An apparatus comprising: a chamber body and a lid defining a space therein; a dielectric plate disposed between the chamber body and the lid, the dielectric plate extending laterally into the space; a channel formed through the lid adjacent the dielectric plate, the channel surrounding at least a portion of the space; a substrate support positioned in the space opposite the lid, a support body disposed on the stem, the support body including a central region and a peripheral region radially outward of the central region, the central region having a thickness less than a thickness of the peripheral region; a flange disposed adjacent a bottom surface of the peripheral region, the flange extending radially outward of an outer edge of the peripheral region; a substrate support comprising: a bellows disposed on the flange and connected to the flange and the dielectric plate; an opening formed through said bellows, said opening being sealed closed when said bellows is compressed.

8. The device of claim 7 further comprising a conductive rod extending through the stem.

9. 8. The apparatus of claim 7, further comprising a grounding plate disposed between said support body and said stem, said grounding plate being coupled to said flange.

10. 10. The apparatus of claim 9, further comprising a grounding strip having a first end and a second end, the first end coupled to the grounding plate adjacent the stem and the second end coupled to the chamber body.

11. further comprising a plurality of grounding strips, each grounding strip having a first end and a second end; each of the first ends is coupled to the ground plate adjacent the stem; Each of the second ends is coupled to the chamber body.

10. The apparatus of claim 9.

12. 10. The apparatus of claim 9, wherein the opening in the bellows is aligned with an opening formed through the chamber body, and wherein the bellows seals the opening formed through the chamber body when the substrate support is in a raised position.

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