Substrate support unit and substrate processing apparatus

Abstract

To provide a substrate support part which enables improvement of controllability of a substrate temperature, and to provide a substrate processing device.SOLUTION: In a plasma processing device, a substrate support part includes: a base 111; a first passage 51 which is open on a lower surface of the base at a center part of the base; a second passage 52 which encloses a periphery of the first passage and is open on the lower surface of the base; a third passage 53 which communicates with the first passage and is disposed from the center part of the base to an outer periphery part; and a fourth passage 54 which communicates with the second passage, is disposed from the center part of the base to the outer periphery part, and communicates with the third passage at the outer periphery part of the base.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present disclosure relates to a substrate support and a substrate processing apparatus. [Background technology]

[0002] For example, Patent Document 1 discloses a mounting table having a base in which a flow path for a coolant is formed, and a protruding member provided within the flow path. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2019-41024 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides techniques that can improve controllability of substrate temperature. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, there is provided a base, a first flow path that opens onto the underside of the base at the center of the base, a second flow path that surrounds the first flow path and opens onto the underside of the base, a third flow path that communicates with the first flow path and is arranged from the center to the outer periphery of the base, and a fourth flow path that communicates with the second flow path and is arranged from the center to the outer periphery of the base and is configured to communicate with the third flow path at the outer periphery of the base. [Effects of the Invention]

[0006] According to one aspect, the controllability of the substrate temperature can be improved. [Brief explanation of the drawings]

[0007] [Figure 1]1 is a schematic cross-sectional view illustrating an example of a plasma processing system according to an embodiment. [Figure 2] FIG. 1 is a diagram showing an example of a plasma processing apparatus according to an embodiment. [Figure 3] FIG. 4 is an enlarged cross-sectional view of a flow path in a base of a substrate support according to an embodiment. [Figure 4] Cross-sectional view taken along the AA plane in Figure 3. [Figure 5] FIG. 2 is a perspective view showing a flow channel within a base of a substrate support according to an embodiment. [Figure 6] FIG. 4 is a diagram showing a diffusion member provided in a flow path according to an embodiment. [Figure 7] FIG. 4 is a diagram showing a diffusion member provided in a flow path according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0009] [Plasma processing system] In one embodiment, the plasma processing system shown in FIG. 1 includes a plasma processing apparatus 1 and a controller 2. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0010] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generating units may be used, including alternating current (AC) plasma generating units and direct current (DC) plasma generating units. In one embodiment, the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes a radio frequency (RF) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 200 kHz to 150 MHz.

[0011] The controller 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The controller 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the controller 2 may be included in the plasma processing apparatus 1. The controller 2 may include, for example, a computer 2a. The computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 may be configured to perform various control operations based on programs stored in the storage unit 2a2. The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0012] Next, referring to FIG. 2, an exemplary configuration of a capacitively coupled plasma processing apparatus 1 will be described. The plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The sidewall 10a is grounded. The showerhead 13 and the substrate support 11 are electrically isolated from the plasma processing chamber 10 housing.

[0013] The substrate support 11 includes a base 111, an electrostatic chuck, and a ring assembly 112. The electrostatic chuck is disposed on the base 111. The top surface of the electrostatic chuck has a central region (substrate support surface) 111a for supporting a substrate (wafer) W and an annular region (ring support surface) 111b for supporting the ring assembly 112. The annular region 111b of the electrostatic chuck surrounds the central region 111a of the electrostatic chuck in a planar view. The substrate W is disposed on the central region 111a of the electrostatic chuck, and the ring assembly 112 is disposed on the annular region 111b of the electrostatic chuck so as to surround the substrate W on the central region 111a of the electrostatic chuck. In one embodiment, the base 111 includes a conductive member, and the conductive member of the base 111 functions as a lower electrode. The ring assembly 112 includes one or more annular members. At least one of the one or more annular members is an edge ring. Although not shown, the substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck, the ring assembly 112, and the substrate W to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path, or a combination thereof. The substrate support 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas between the back surface of the substrate W and the substrate support surface 111 a.

[0014] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes a conductive member. The conductive member of the showerhead 13 functions as an upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0015] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0016] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to the conductive member of the substrate support 11 and / or the conductive member of the showerhead 13. This causes plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the conductive member of the substrate support 11, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0017] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to the conductive members of the substrate support 11 and / or the conductive members of the showerhead 13 via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 13 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to the conductive members of the substrate support 11 and / or the conductive members of the showerhead 13. The second RF generating unit 31b is coupled to the conductive members of the substrate support 11 via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a frequency lower than that of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 400 kHz to 13.56 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated bias RF signals are supplied to the conductive members of the substrate support 11. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0018] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to a conductive member of the substrate support 11 and configured to generate a first DC signal. The generated first DC signal is applied to the conductive member of the substrate support 11. In one embodiment, the first DC signal may be applied to another electrode, such as an electrode in an electrostatic chuck. In one embodiment, the second DC generator 32b is connected to a conductive member of the showerhead 13 and configured to generate a second DC signal. The generated second DC signal is applied to the conductive member of the showerhead 13. In various embodiments, the first and second DC signals may be pulsed. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0019] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0020] [Flow path] The base 111 is made of aluminum, and has a flow path 50 formed therein. The flow path 50 is configured symmetrically about the central axis Ax of the disk-shaped base 111. The central axis of the base 111 is common to the central axis of the cylindrical plasma processing chamber 10.

[0021] Both the inlet and outlet of the flow path 50 are located in the center of the base 111. The inlet and outlet of the flow path 50 are connected to a chiller unit 60. A heat exchange medium such as brine is controlled to a desired temperature by the chiller unit 60 and flows into the flow path 50 from an inlet provided in the center of the base 111. The heat exchange medium flows from the center to the outside, turns around at the outer periphery, flows from the outer periphery to the center, flows out from an outlet provided in the center, and returns to the chiller unit 60. In this way, the heat exchange medium circulates between the chiller unit 60 and the flow path 50.

[0022] Next, details of the flow channel 50 in the base 111 will be described with reference to FIGS. 3 to 5. FIG. 3 is an enlarged cross-sectional view of the flow channel 50 in the base 111 according to one embodiment. As shown in FIG. 3, the flow channel 50 is formed inside the base 111 and includes a first flow channel 51, a second flow channel 52, a third flow channel 53, and a fourth flow channel 54. The first flow channel 51 opens to the lower side of the base 111 at the center of the base 111. The first flow channel 51 is disposed substantially vertically at the center of the base 111. However, the first flow channel 51 may be disposed in a tapered or oblique shape at the center of the base 111. The second flow channel 52 is configured to surround the periphery of the first flow channel 51. The second flow channel 52 opens to the lower side of the base 111 at the center of the base 111 so as to surround the periphery of the opening of the first flow channel 51.

[0023] The third flow path 53 communicates with the first flow path 51 and is arranged from the center toward the outer periphery of the base 111. The fourth flow path 54 communicates with the second flow path 52 and is arranged along the third flow path 53 from the center toward the outer periphery of the base 111, and is configured to communicate with the third flow path 53 at the outer periphery of the base 111. The third flow path 53 is arranged on the upper surface side of the base 111, and the fourth flow path 54 is arranged below the third flow path 53. When the heat exchange medium flows in from the first flow path 51, the third flow path 53 serves as the outward path and the fourth flow path 54 serves as the return path, with the second flow path 52 serving as the outlet for the heat exchange medium. When the heat exchange medium flows in from the second flow path 52, the fourth flow path 54 serves as the outward path and the third flow path 53 serves as the return path, with the first flow path 51 serving as the outlet for the heat exchange medium.

[0024] The opening of the first flow path 51 and the opening of the second flow path 52 are connected to a chiller unit 60 via piping (not shown). The opening of the first flow path 51 may be used as an inlet for the heat exchange medium, or the opening of the second flow path 52 may be used as an inlet for the heat exchange medium.

[0025] If the opening of the first flow path 51 is an inlet for the heat exchange medium and the opening of the second flow path 52 is an outlet for the heat exchange medium, a greater cooling effect can be obtained on the substrate W side, that is, on the upper surface side of the base 111 or the central side of the base 111. On the other hand, if the opening of the second flow path 52 is an inlet for the heat exchange medium and the opening of the first flow path 51 is an outlet for the heat exchange medium, a greater cooling effect can be obtained on the outer periphery side of the substrate W, that is, on the lower surface side of the base 111 or the outer periphery side of the base 111.

[0026] A switching valve 61 may be provided between the first flow path 51 and the second flow path 52 and the chiller unit 60. The switching valve 61 can switch between the first flow path 51 and the second flow path 52 as an inlet for the heat exchange medium and the other as an outlet. However, the switching valve 61 does not necessarily have to be provided.

[0027] Fig. 4 shows a cross section taken along the AA plane in Fig. 3. As shown in Fig. 4, the first flow path 51 and the second flow path 52 are arranged coaxially. In this specification, "arranged coaxially" refers not only to the case where the central axis of the first flow path 51 and the central axis of the second flow path 52 are perfectly aligned, but also to an amount of misalignment that may occur during manufacturing.

[0028] 4, the central axis of the first flow channel 51 is Ix, and the central axis of the second flow channel 52 is Ox. If the deviation between the central axis Ix of the first flow channel 51 and the central axis Ox of the second flow channel 52 is within 1 mm in linear distance, 1 mm is an amount of deviation that may occur during manufacturing, and it can be said that the first flow channel 51 and the second flow channel 52 are arranged coaxially. Note that the central axis Ix of the first flow channel 51 and the central axis Ox of the second flow channel 52 are also arranged coaxially with the central axis Ax of the base 111.

[0029] Furthermore, when the coaxially arranged first flow path 51 and second flow path 52 are cut in a direction perpendicular to the flow direction, the ratio of the cross-sectional area S2 of the second flow path 52 to the cross-sectional area S1 of the first flow path 51 is 0.8 to 1.2.

[0030] Furthermore, as long as the second flow path 52 is disposed coaxially around the first flow path 51, the cross-sectional shape of the second flow path 52 does not have to be circular. For example, the cross-sectional shape of the second flow path 52 may be a polygonal ring shape such as a triangle or a rectangle, or may be another shape. Similarly, the cross-sectional shape of the first flow path 51 does not have to be a perfect circle. For example, the cross-sectional shape of the first flow path 51 may be a polygonal shape such as an ellipse, a triangle, a rectangle, or may be another shape.

[0031] Thus, the flow path 50 has a first flow path 51 and a second flow path 52 that function as an inlet and an outlet for the heat exchange medium in the center of the base 111, and the first flow path 51 and the second flow path 52 have a coaxial structure. Note that the central part of the base 111 refers to the innermost region when the radius of the base 111 is divided into thirds, the outer peripheral part of the base 111 refers to the outermost region when the radius of the base 111 is divided into thirds, and the intermediate part of the base 111 refers to the region between the inner peripheral part and the outer peripheral part.

[0032] Returning to FIG. 3 , a heat insulating space 55a is arranged between the first flow path 51 and the second flow path 52. A heat exchange medium flows in from one of the first flow path 51 and the second flow path 52, and flows out from the other. Since the heat exchange medium absorbs heat from the substrate W while flowing through the flow path 50, the temperature of the heat exchange medium increases when it flows out, resulting in a temperature difference between the temperature of the heat exchange medium when it flows in. For the above reasons, a heat insulating space 55a is arranged between the first flow path 51 and the second flow path 52 to minimize the influence of thermal interference between the heat exchange media flowing in each flow path. Similarly, a heat insulating space 55b is arranged between the third flow path 53 and the fourth flow path 54 to minimize the influence of thermal interference between the heat exchange media flowing in each flow path. but are placed.

[0033] FIG. 5(a) shows a base 111 according to an embodiment, which is 90° from the central axis Ax. ° 5(a) is a perspective view showing the flow path 50 in the base 111 when cut into 1 / 4 at an angle of 0.05°. In the example of FIG. 5(a), the heat exchange medium flows in from the inlet 51a of the first flow path 51 and flows from bottom to top toward the upper surface of the base 111 in a substantially vertical direction. However, the heat exchange medium may also flow in from the second flow path 52.

[0034] The first flow path 51 extends from the center of the base 111 outward by approximately 90°. ° The first flow paths 51 gently curve and change direction, communicate with the third flow paths 53, and spread out radially. The heat exchange medium that has flowed through the first flow paths 51 changes direction from the center of the base 111 outward, and flows along the upper surface of the base 111 through the third flow paths 53 that are formed radially.

[0035] The second flow path 52 extends from the center of the base 111 outwardly by approximately 90°. ° The fourth flow path 54 is curved and changes direction, communicates with the fourth flow path 54, and spreads out radially. ° The flow path 52 is turned around and communicates with the third flow path 53 .

[0036] The heat exchange medium flows radially through the third flow passage 53 from the center to the outer periphery, turns back at the outer periphery, and flows through the fourth flow passage 54 from the outer periphery to the center, below the third flow passage 53, along the third flow passage 53. The heat exchange medium flows approximately 90° at the center. ° The liquid curves and changes direction, flows from top to bottom in a substantially vertical direction in the second flow path 52, and flows out from the outlet 52a of the second flow path 52.

[0037] Fig. 5(b) is a plan view of the base 111 of Fig. 5(a). Approximately fan-shaped third flow paths 53 are formed inside the base 111 and are arranged radially. Fourth flow paths 54 are formed in the same approximately fan-shaped shape as the third flow paths 53 below the third flow paths 53 so as to overlap the third flow paths 53 and are arranged radially. For this reason, the fourth flow paths 54 overlap the third flow paths 53 and are not visible in Fig. 5(b).

[0038] As shown in FIG. 5(a), the distance in the height direction of the third flow path 53 becomes shorter toward the outer peripheral portion. For example, the height H2 at the outer peripheral portion of the third flow path 53 shown in FIG. 5 has a relationship of H2 < H1 with respect to the height H1 at the central portion of the third flow path 53. The distance in the height direction of the third flow path 53 may continuously become shorter or may stepwise become shorter toward the outer peripheral portion. For example, the upper surface of the third flow path 53 may be horizontally formed on the upper surface of the base 111, and the lower surface of the third flow path 53 may be formed in a slope shape or an upward staircase shape having an upward inclination toward the outer peripheral portion. Further, the lower surface of the third flow path 53 may be horizontally formed on the upper surface of the base 111, and the upper surface of the third flow path 53 may be formed in a slope shape or a downward staircase shape having a downward inclination toward the outer peripheral portion.

[0039] According to this, the distance in the height direction of the third flow path 53 becomes shorter toward the outer peripheral portion, and the cross-sectional area of the third flow path 53 becomes smaller than when the height of the third flow path 53 is not changed. Therefore, the heat exchange medium flowing through the third flow path 53 is configured so as not to reduce the flow velocity when flowing from the central portion to the outside. Thereby, the decrease in the heat transfer efficiency when the heat exchange medium flows from the central portion to the outer peripheral portion is suppressed, and desired heat uniformity can be obtained in the temperature control of the substrate W.

[0040] In particular, in the structure of the flow path 50 of the present disclosure, when the heat exchange medium flows through the third flow path 53, the heat mainly possessed by the substrate W is absorbed, and the temperature of the heat exchange medium rises. Therefore, as shown in FIG. 6, an exhaust system 40 is connected to the heat insulation space 55b, and the heat insulation space 55b is evacuated using a vacuum pump of the exhaust system 40. Thereby, the heat insulation space 55b can be made a vacuum heat insulation space, and the heat insulation effect can be enhanced. Thereby, the decrease in the heat absorption efficiency due to the influence of heat interference between the heat exchange media flowing through the third flow path 53 and the fourth flow path 54 can be suppressed. Similarly, the heat insulation space 55 a is connected to the exhaust system 40, and the heat insulation space 55 aThe heat insulating effect can be enhanced by evacuating the inside of the first flow path 51 and the second flow path 52. This can suppress a decrease in heat absorption efficiency due to the influence of thermal interference between the heat exchange media flowing through the first flow path 51 and the second flow path 52.

[0041] Returning to FIG. 5 , a plurality of third flow paths 53 and a plurality of fourth flow paths 54 are disposed, and a plurality of heat dissipation fins 56 are formed between the plurality of third flow paths 53 to separate each of the third flow paths 53. Furthermore, a plurality of heat dissipation fins 56 are formed between the plurality of fourth flow paths 54 to separate each of the fourth flow paths 54. The plurality of heat dissipation fins 56 separating each of the third flow paths 53 and the fourth flow paths 54 are disposed radially from the center of the base 111 toward the outer periphery at equal intervals over 360°, separating each of the third flow paths 53 and each of the fourth flow paths 54 into approximately fan-shaped flow paths. As a result, the heat exchange medium flowing through each of the third flow paths 53 and each of the fourth flow paths 54 comes into contact with the heat dissipation fins 56, thereby improving heat dissipation.

[0042] The heat dissipation fins 56 are configured to become thicker from the center to the outer periphery, and the cross-sectional area of ​​the heat dissipation fins 56 increases toward the outer periphery. This reduces the difference in cross-sectional area between the outer periphery and the center of the third flow path 53, and reduces the difference in cross-sectional area between the outer periphery and the center of the fourth flow path 54. This prevents a decrease in the flow rate of the heat exchange medium flowing through the third flow path 53 and the fourth flow path 54, thereby achieving the desired temperature uniformity and preventing temperature singularities from occurring within the flow paths.

[0043] 5 shows an example in which the heat dissipation fins 56 are uniformly arranged at a predetermined angle and become thicker toward the periphery, but this is not limiting, and the number of heat dissipation fins 56 may be increased toward the periphery. For example, heat dissipation fins shorter than the heat dissipation fins 56 in FIG. 5 may be arranged on the periphery between the heat dissipation fins 56 in FIG.

[0044] By reducing the height of the third flow path 53 from the central portion toward the periphery to prevent a decrease in the flow rate of the heat exchange medium, and by increasing the number and cross-sectional area of ​​the heat dissipation fins 56 to increase the contact area with the heat exchange medium, the efficiency of heat transfer from the heat exchange medium to the heat dissipation fins 56 can be improved. This makes it possible to obtain a desired temperature uniformity within the surface of the substrate W in temperature control of the substrate W. The height of the fourth flow path 54 may be lower from the central portion toward the periphery, or may be the same.

[0045] [Diffusion material] A diffusion member may be disposed in at least one of the flow paths 50, the first flow path 51, the second flow path 52, the third flow path 53, and the fourth flow path 54. The diffusion member provided in the flow path 50 according to one embodiment will be described with reference to Figs. 6 and 7.

[0046] The flow path 50 has temperature singularities. That is, positions where the heat exchange medium flow velocity is high are easily cooled, and positions where the heat exchange medium flow velocity is low are difficult to cool. For this reason, positions where the flow of the heat exchange medium changes are likely to become temperature singularities. For example, in FIG. 5 , in region B, which is the communication portion between the third flow path 53 and the fourth flow path 54, and in region C, which includes the top surface of the flow path portion where the first flow path 51 and the third flow path 53 communicate and the communication portion between the second flow path 52 and the fourth flow path 54, the flow of the heat exchange medium changes significantly. That is, in region B and region C, the flow velocity of the heat exchange medium changes, resulting in temperature singularities.

[0047] Therefore, it is preferable to place a diffusion member in the flow path 50 at or near the temperature singular point. Examples of the diffusion member include a convex member 57 shown in Fig. 6 and a screw 58 or elliptical member 59 shown in Fig. 7. However, the diffusion member is not limited to these, and may be any member that has the function of suppressing the accumulation of the heat exchange medium in the flow path 50 and adjusting the flow rate of the heat exchange medium. Furthermore, the flow path 50 itself may be provided with a recess and / or a protrusion.

[0048] The convex member 57 shown in Fig. 6 is disposed at or near the temperature singular point, in region B where the flow rate of the heat exchange medium in the flow path 50 is slow. The number of convex members 57 is not limited to this, and one or more convex members 57 may be disposed. Furthermore, in the example of Fig. 6, the convex member 57 is disposed at a position where the flow rate of the heat exchange medium in the flow path 50 is slow, but the convex member 57 may also be disposed at a position where the flow rate of the heat exchange medium is fast.

[0049] The diffusing members shown in Figures 7(a) to 7(c) may be used instead of the convex member 57 shown in Figure 6. That is, the screw 58 shown in Figure 7(a), the elliptical member 59 shown in Figure 7(b), and the lifting screw 66 shown in Figure 7(c) are examples of the diffusing member.

[0050] The screw 58 has a spiral groove. The elliptical member 59 is rotatable around an axis 59a, and the orientation of the long and short sides of the ellipse can be changed according to the flow of the heat exchange medium. The lifting screw 66 can be raised and lowered. The screw 58, the elliptical member 59, and the lifting screw 66 adjust the flow direction and flow rate of the heat exchange medium. This allows the heat removal responsiveness to be changed, thereby correcting temperature singularities.

[0051] The diffusion member described above is an example, and the diffusion member may be a fin, an adjustment plate, a cylindrical protrusion, a cylindrical depression, or a dimple-like concave and / or convex portion provided in the flow path 50. The screw 58, the elliptical member 59, the lift screw 66, the fin, the adjustment plate, the cylindrical protrusion, and the cylindrical depression are examples of the concave and / or convex portion of the diffusion member.

[0052] By placing one or more diffusion members within the flow path 50, the heat transfer area can be increased, preventing a decrease in heat transfer efficiency. In addition, singular points can be corrected by adjusting the flow direction and flow rate of the heat exchange medium and changing the heat removal responsiveness. The diffusion members can be placed at temperature singular points within the flow path 50, which does not require any design changes to the flow path 50 and allows for easy correction of temperature singular points.

[0053] The substrate support 11 including the base 111 having the flow channel 50 described above may be produced by metal additive manufacturing using a 3D printer.

[0054] [effect] In the conventional flow path formed in the base 111, the inlet and outlet of the flow path are located in a part of the outer periphery of the base 111, the flow path is formed in a spiral shape from the outer periphery to the center, and the flow path is formed in another spiral shape by turning back from the center toward the outer periphery. As a result, the inlet and outlet of the flow path are biased to a part of the outer periphery as temperature singular points, and it is difficult to correct the temperature singular points.

[0055] In contrast, the flow path 50 of the present disclosure has a first flow path 51 and a second flow path 52, which serve as an inlet and an outlet for the heat exchange medium, in the center of the base 111, and the first flow path 51 and the second flow path 52 are provided coaxially. This facilitates temperature control on the same axis, improves controllability of the temperature distribution on the same axis, and can improve temperature controllability of the substrate W and temperature uniformity within the surface of the substrate W.

[0056] The base 111 is disk-shaped, and the substrate W to be temperature controlled is also circular. The heaters arranged on the base 111 are also arranged separately and coaxially at the center, intermediate, and outer periphery of the substrate support 11 (base 111 or electrostatic chuck). The plasma processing chamber 10 is also cylindrical. In other words, the central axes of the substrate W, heater, and plasma processing chamber 10 are coaxial and share a common axis with the central axis Ax of the base 111.

[0057] Therefore, in the flow path 50 of the present disclosure, the first flow path 51 and the second flow path 52 are arranged coaxially. By making the structure of the flow path 50 the same coaxial structure as the substrate W, the heater, and the plasma processing chamber 10, it becomes easier to control the temperature on the coaxial line, and it is possible to improve the controllability of the temperature distribution on the coaxial line, and to improve the controllability of the temperature of the substrate W and the uniformity of the temperature across the surface of the substrate W.

[0058] The substrate support and substrate processing apparatus according to the presently disclosed embodiments should be considered in all respects as illustrative and not restrictive. The embodiments can be modified and improved in various ways without departing from the spirit and scope of the appended claims. The features described in the above embodiments can be configured in other ways and can be combined together without any inconsistency.

[0059] The substrate processing apparatus of the present disclosure can be applied to any type of plasma processing apparatus, including atomic layer deposition (ALD) apparatus, capacitively coupled plasma (CCP), inductively coupled plasma (ICP), radial line slot antenna (RLSA), electron cyclotron resonance plasma (ECR), and helicon wave plasma (HWP).

[0060] Furthermore, although a plasma processing apparatus has been described as an example of a substrate processing apparatus, the substrate processing apparatus may be any apparatus that performs a predetermined process on a substrate (e.g., a film formation process, an etching process, etc.), and is not limited to a plasma processing apparatus. [Explanation of symbols]

[0061] 1. Plasma processing equipment 2. Control section 2a Computer 2a1 Processing section 2a2 Storage section 2a3 communication interface 10 Plasma Processing Chamber 11 Substrate support 13. Shower head 21 Gas Source 20 Gas supply unit 30 power supply 31 RF power supply 31a First RF generation unit 31b Second RF generation unit 32a First DC generation unit 32b Second DC generation unit 40 Exhaust System 50 flow paths 51 First Channel 52 Second Channel 53 Third Stream 54 Fourth Stream 55a, 55b Insulated space 111 Foundation 112 Ring Assembly

Claims

1. The base and a first flow path that opens to a lower surface of the base at a central portion of the base; a second flow path that surrounds the first flow path and opens to a lower surface of the base; a third flow path that is in communication with the first flow path and is disposed from the center portion of the base toward the outer periphery thereof; a fourth flow path that communicates with the second flow path, is arranged from the center of the base toward the outer periphery, and is configured to communicate with the third flow path at the outer periphery of the base; and The substrate support member has a first heat insulating space defined between the first flow path and the second flow path, the first heat insulating space extending upward from the lower surface of the base.

2. The first flow path and the second flow path are arranged coaxially. The substrate support of claim 1 .

3. a plurality of the third flow paths and a plurality of the fourth flow paths are arranged, a plurality of heat dissipation fins are formed between the plurality of third flow paths to separate each of the third flow paths, a plurality of heat dissipation fins are formed between the plurality of fourth flow paths to separate each of the fourth flow paths, and the cross-sectional areas of the plurality of heat dissipation fins that separate each of the third flow paths and the fourth flow paths become larger toward the outer periphery of the base; The substrate support according to claim 1 or 2.

4. A second insulating space is defined between the third flow path and the fourth flow path. A substrate support according to any one of claims 1 to 3.

5. a ratio of a cross-sectional area of ​​the second flow path to a cross-sectional area of ​​the first flow path is 0.8 to 1.2; A substrate support according to any one of claims 1 to 4.

6. The height of the third flow path becomes shorter toward the outer periphery of the base. A substrate support according to any one of claims 1 to 5.

7. a diffusion member is disposed in at least one of the first flow path, the second flow path, the third flow path, and the fourth flow path; A substrate support according to any one of claims 1 to 6.

8. The diffusion member has a concave portion and / or a convex portion. The substrate support of claim 7 .

9. The base and a first flow path that opens to a lower surface of the base at a central portion of the base; a second flow path that surrounds the first flow path and opens to a lower surface of the base; a third flow path that is in communication with the first flow path and is disposed from the center portion of the base toward the outer periphery thereof; a fourth flow path that communicates with the second flow path, is arranged from the center of the base toward the outer periphery, and is configured to communicate with the third flow path at the outer periphery of the base; and The substrate processing apparatus includes a substrate support unit in which a first heat insulating space is defined upward from the lower surface of the base between the first flow path and the second flow path.

10. The first flow path and the second flow path are arranged coaxially. The substrate processing apparatus according to claim 9 .

11. The third flow path and the fourth flow path are each arranged in a plurality of numbers, and between the plurality of third flow paths, a plurality of heat dissipation fins are formed to separate each of the third flow paths, and a plurality of heat dissipation fins are formed between the plurality of fourth flow paths to separate each of the fourth flow paths, and the cross-sectional areas of the plurality of heat dissipation fins that separate each of the third flow paths and the fourth flow paths become larger toward the outer periphery of the base; The substrate processing apparatus according to claim 9 or 10.

12. A second insulating space is defined between the third flow path and the fourth flow path. The substrate processing apparatus according to any one of claims 9 to 11.

13. a ratio of a cross-sectional area of ​​the second flow path to a cross-sectional area of ​​the first flow path is 0.8 to 1.2; The substrate processing apparatus according to any one of claims 9 to 12.

14. The height of the third flow path becomes shorter toward the outer periphery of the base. The substrate processing apparatus according to any one of claims 9 to 13.

15. a diffusion member is disposed in at least one of the first flow path, the second flow path, the third flow path, and the fourth flow path; The substrate processing apparatus according to any one of claims 9 to 14.

16. The diffusion member has a concave portion and / or a convex portion. The substrate processing apparatus according to claim 15 .

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