Reactor system with tuned circuit

Abstract

To provide a susceptor assembly for a reactor system.SOLUTION: A susceptor assembly for a reactor system comprises a susceptor body defined by a susceptor outer edge, the susceptor body comprising a susceptor outer portion and a susceptor inner portion, where the susceptor outer portion is proximate the susceptor outer edge, and the susceptor inner portion is at least partially enclosed within the susceptor outer portion; a first tuning circuit comprising an edge electrode and a first resonance circuit coupled to the edge electrode, where the edge electrode is coupled to the susceptor body; and a second tuning circuit comprising a center electrode and a second resonance circuit coupled to the center electrode, where the center electrode is coupled to the susceptor body. The edge electrode is disposed more proximate the susceptor outer edge than the center electrode.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates generally to semiconductor processing or reactor systems, and more particularly to semiconductor reactor systems and components therein, which promote more uniform processing across surfaces within the reactor, for example, on substrates. [Background technology]

[0002] The reaction chamber can be used to process substrates therein (e.g., deposit layers of various materials on a semiconductor substrate). The substrate can be placed on a susceptor within the reaction chamber. Both the substrate and the susceptor may be heated to a desired substrate temperature setpoint. In an exemplary substrate treatment process, one or more reactive gases can be passed over the heated substrate, causing the deposition of thin films of materials on the substrate surface. Through subsequent deposition, doping, lithography, etching, and other processes, these layers can be made into integrated circuits.

[0003] Deposition or other treatment on the surface of a substrate may have a desired pattern. For example, it may be desirable to have a layer of material deposited on the substrate that has a uniform thickness across the entire substrate surface. That is, even deposition of material may be desired. However, in some cases, deposition of material at or near one portion of the substrate (e.g., an edge of the substrate) may differ from deposition in another region of the substrate (e.g., a region closer to the center of the substrate). Therefore, systems and methods that enable the ability to tailor the amount of treatment on the substrate in specific regions of the substrate (e.g., to promote more uniform and / or even deposition on the surface of the substrate) are desirable. Summary of the Invention [Means for solving the problem]

[0004] This Summary is provided to introduce a selection of concepts in a simplified form that are described in more detail below in the Detailed Description of Exemplary Embodiments of this Disclosure. This Summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0005] In some embodiments, a reactor system is provided. The reactor systems disclosed herein can enable tunable material deposition onto a substrate and / or processing of a substrate, for example, to achieve more uniform material deposition onto the substrate and / or processing of the substrate.

[0006] In various embodiments, a reactor system includes a susceptor assembly including a susceptor body defined by an outer edge of the susceptor, the susceptor body including a susceptor outer portion and a susceptor inner portion, the susceptor outer portion being near the susceptor outer edge and the susceptor inner portion being at least partially enclosed within the susceptor outer portion; a first tuning circuit including an edge electrode and a first resonant circuit coupled to the edge electrode, the edge electrode coupled to the susceptor body; and a second tuning circuit including a center electrode and a second resonant circuit coupled to the center electrode, the center electrode coupled to the susceptor body. The edge electrode may be positioned closer to the outer edge of the susceptor than the center electrode. In various embodiments, the first resonant circuit may include a first capacitor and / or a first inductor. In various embodiments, the first capacitor may have a first adjustable capacitance and / or the first inductor may have a first adjustable inductance. In various embodiments, the first resonant circuit may further comprise a first separate capacitor. In various embodiments, the second resonant circuit may comprise a second capacitor and / or a second inductor. In various embodiments, the second capacitor may have a second adjustable capacitance and / or the second inductor may have a second adjustable inductance. In various embodiments, the second resonant circuit may further comprise a second separate capacitor.

[0007] In various embodiments, the edge electrode may extend along at least a portion of the outer portion of the susceptor. In various embodiments, the susceptor assembly may further include a second edge electrode extending along a second portion of the outer portion of the susceptor. The second portion of the outer portion of the susceptor may be different from the portion of the outer portion of the susceptor along which the edge electrode extends. In various embodiments, the second edge electrode may be included in a first tuning circuit and coupled to a first resonant circuit, and / or the second edge electrode may be included in a third tuning circuit and coupled to a third resonant circuit of the third tuning circuit. In various embodiments, the first tuning circuit may further include a first wiring coupled between the edge electrode and the first resonant circuit, and / or the second tuning circuit may further include a second wiring coupled between the center electrode and the second resonant circuit. In various embodiments, an outer edge of the edge electrode may at least partially define a first shape, and a gap in the edge electrode may be disposed within the first shape and at least partially surrounded by the edge electrode.

[0008] In various embodiments, the center electrode may be defined by an outer edge of the center electrode and may be disposed on or extend at least partially through an inner portion of the susceptor. The center electrode may be disposed at least partially within the gap of the edge electrode. In various embodiments, the susceptor assembly may further include a second center electrode disposed at least partially within the gap of the edge electrode and extending to a second portion of the inner portion of the susceptor, which may be different from the portion of the inner portion of the susceptor through which the center electrode extends. In various embodiments, the second center electrode may include a second tuning circuit and be coupled to a second resonant circuit, and / or the second center electrode may be included in a third tuning circuit and be coupled to a third resonant circuit of the third tuning circuit. In various embodiments, the outer edge of the center electrode may at least partially define the second shape. In various embodiments, the first shape and the second shape may be concentric.

[0009] In various embodiments, a susceptor for a reactor system may include a susceptor body defined by an outer edge of the susceptor, the susceptor body including an outer portion of the susceptor and an inner portion of the susceptor, the outer portion of the susceptor being proximate the outer edge of the susceptor and the inner portion of the susceptor being within the outer portion of the susceptor, the susceptor body, an edge electrode coupled to the susceptor body, and / or a center electrode coupled to the susceptor body. The edge electrode may be positioned closer to the outer edge of the susceptor than the center electrode. In various embodiments, a first impedance of the edge electrode may be adjustable and / or a second impedance of the center electrode may be adjustable. In various embodiments, the edge electrode extends along at least a portion of the outer portion of the susceptor and defines at least a portion of the edge electrode shape, and the edge electrode at least partially surrounds a gap in the edge electrode. The center electrode may be defined by an outer edge of the center electrode, and the center electrode may be disposed within an inner portion of the susceptor and at least partially within a gap in the edge electrode. In various embodiments, the edge electrode shape may be a first circular shape and / or the center electrode outer edge may be a second circular shape.

[0010] In various embodiments, the method includes adjusting the impedance of at least one of the first resonant circuit or the second resonant circuit; adjusting a first electric field near a first electrode coupled to the first resonant circuit in response to adjusting the impedance of the first resonant circuit, where the first electrode is coupled to the susceptor; and / or adjusting a second electric field near a second electrode coupled to the second resonant circuit in response to adjusting the impedance of the second resonant circuit, where the second electrode may be coupled to the susceptor at a different location than the first electrode. In various embodiments, the first electrode may extend along at least a portion of an outer portion of the susceptor, where the outer portion of the susceptor is proximate an outer edge of the susceptor. The second electrode may be disposed on an inner portion of the susceptor, where the inner portion of the susceptor is within the outer portion of the susceptor.

[0011] For purposes of summarizing the disclosure and the advantages achieved over the prior art, certain specific objects and advantages of the disclosure have been described hereinabove. Of course, it should be understood that not necessarily all such objects or advantages may be achieved in accordance with any particular embodiment of the disclosure. Thus, for example, those skilled in the art will recognize that the embodiments disclosed herein may be practiced in a manner that achieves or optimizes one advantage or group of advantages as taught or suggested herein, without necessarily achieving other objects or advantages as may be taught or suggested herein.

[0012] All of these embodiments are intended to be within the scope of the present disclosure. These and other embodiments will become readily apparent to those skilled in the art from the following detailed description of certain embodiments, taken in conjunction with the accompanying drawings, and the present disclosure is not limited to any particular embodiment discussed.

[0013] While this specification concludes with claims particularly pointing out and distinctly claiming what are regarded as embodiments of the present disclosure, the advantages of embodiments of the present disclosure may be more readily apparent from the following description of certain specific examples of embodiments of the present disclosure when read in conjunction with the accompanying drawings, in which like element numbering throughout the drawings indicates identical elements. [Brief explanation of the drawings]

[0014] [Figure 1] FIG. 1 is a schematic diagram of an exemplary reactor system, according to various embodiments. [Figure 2A] FIG. 2A is a schematic diagram of an exemplary reaction chamber with a lowered susceptor, according to various embodiments. [Figure 2B] FIG. 2B is a schematic diagram of an exemplary reaction chamber with the susceptor in a raised position, according to various embodiments. [Figure 3] FIG. 3 is a cross-sectional view of a susceptor with electrodes according to various embodiments. [Figure 4] FIG. 4 is a top view of an electrode configured to be coupled to and / or disposed within a susceptor, according to various embodiments. [Figure 5] FIG. 5 is a method for treating a substrate in a reactor system, according to various embodiments. [Figure 6] 6A-6D are plots illustrating the electric field above a substrate on a susceptor, according to various embodiments, where the susceptor comprises edge and center electrodes, and the impedance levels of the edge and center electrodes are varied. DETAILED DESCRIPTION OF THE INVENTION

[0015] Although certain embodiments and examples are disclosed below, it will be understood by those skilled in the art that the present disclosure extends beyond the specifically disclosed embodiments and / or uses of the present disclosure, as well as obvious modifications and equivalents thereof. Accordingly, it is not intended that the scope of the present disclosure should be limited by the specific embodiments described herein.

[0016] The figures shown herein are not meant to be actual drawings of any particular materials, apparatus, structures or devices, but merely representations used to describe embodiments of the present disclosure.

[0017] As used herein, the term "substrate" may refer to any underlying material or materials that may be used or upon which a device, circuit or film may be formed.

[0018] As used herein, the term "atomic layer deposition" (ALD) can refer to a vapor deposition process in which deposition cycles, preferably multiple consecutive deposition cycles, are performed in a process chamber. Typically, during each cycle, a precursor chemisorbs to a deposition surface (e.g., the surface of a substrate or a previously deposited underlayer, such as a material deposited using a previous ALD cycle) to form a monolayer or submonolayer that does not readily react with additional precursors (i.e., a self-limiting reaction). If desired, a reactant (e.g., another precursor or reactant gas) can then be introduced into the process chamber for use in converting the chemisorbed precursor to the desired material on the deposition surface. Typically, this reactant can further react with the precursor. Additionally, a purge step can also be utilized during each cycle to remove excess precursor from the process chamber after conversion of the chemisorbed precursor and / or to remove excess reactants and / or reaction by-products from the process chamber. Additionally, the term "atomic layer deposition" as used herein is also meant to include processes denoted by related terms, such as "chemical vapor deposition atomic layer deposition," "atomic layer epitaxy" (ALE), molecular beam epitaxy (MBE), gas source MBE, or metalorganic MBE, as well as chemical beam epitaxy when performed with alternating pulses of precursor compositions, reactive gases, and purge (e.g., inert carrier) gases.

[0019] As used herein, the term "chemical vapor deposition" (CVD) can refer to any process in which a substrate is exposed to one or more volatile precursors that react and / or decompose on the substrate surface to produce a desired deposit.

[0020] As used herein, the terms "film" and "thin film" can refer to any continuous or discontinuous structure and material deposited by the methods disclosed herein. "Films" and "thin films" can include, for example, 2D materials, nanorods, nanotubes, or nanoparticles, or planar partial or complete molecular layers, or partial or complete atomic layers, or clusters of atoms and / or molecules. "Films" and "thin films" can include materials or layers with pinholes, yet are at least partially continuous.

[0021] As used herein, the term "contaminants" may refer to any undesirable material disposed within the reaction chamber that may affect the purity of the substrate disposed within the reaction chamber. The term "contaminants" may refer to, but is not limited to, undesirable deposits, metallic and non-metallic particles, impurities, and waste materials disposed within the reaction chamber.

[0022] Reactor systems used for ALD, CVD, and / or the like can be used for a variety of applications, including the deposition and etching of materials on substrate surfaces. In various embodiments, referring to FIG. 1 , reactor system 50 can include a reaction chamber 4, a susceptor 6 for holding substrate 30 during processing, a gas distribution system 8 (e.g., a showerhead) for distributing one or more reactants to the surface of substrate 30, one or more reactant sources 10, 12, and / or a carrier and / or purge gas source 14 fluidly connected to reaction chamber 4 via lines 16-20 and valves or controllers 22-26. System 50 can also include a vacuum source 28 fluidly connected to reaction chamber 4.

[0023] 2A and 2B, embodiments of the present disclosure can include reactor systems and methods that can be utilized to process substrates in a reactor system 100. In various embodiments, the reactor system 100 can include a reaction chamber 110 for processing substrates. In various embodiments, the reaction chamber 110 can include a reaction space 112 (i.e., an upper chamber) that can be configured to process one or more substrates, and / or a lower chamber space 114 (i.e., a lower chamber). The lower chamber space 114 can be configured for loading and unloading substrates from the reaction chamber and / or to provide a pressure differential between the lower chamber space 114 and the reaction space 112.

[0024] In various embodiments, the reaction space 112 and the lower chamber space 114 may be separated by a susceptor 130 disposed within the reaction chamber 110. In various embodiments, the reaction space 112 and the lower chamber space 114 may be substantially fluidly separated or isolated from one another. For example, the susceptor 130 may fluidly separate the reaction space 112 and the lower chamber space 114 by forming at least a partial seal (i.e., at least restricting fluid flow) between the susceptor 130 and the chamber sidewall 111 of the reaction chamber 110, which is disposed proximate to the susceptor outer edge 132 of the susceptor 130. That is, the space 108 between the susceptor 130 and the chamber sidewall 111 may be minimized or eliminated so that there is little or no fluid movement between the susceptor 130 and the chamber sidewall 111.

[0025] In various embodiments, to prevent or reduce fluid flow between the susceptor 130 and the chamber sidewall 111, one or more seal members (e.g., seal member 129) may extend from the susceptor 130 (e.g., from the susceptor outer edge 132) and / or from the chamber sidewall 111 of the reaction chamber 110 to the other, forming at least a partial seal (i.e., restricting or preventing fluid flow) between the susceptor 130 and the chamber sidewall 111. At least a partial seal of the reaction space 112 from the lower chamber volume 114 may be desirable to prevent or reduce precursor gases and / or other fluids utilized in processing the substrate 150 from entering and / or contacting the lower chamber volume 114 of the reaction chamber 110. For example, precursor gases utilized to treat substrates within the reaction space may contain corrosive deposition precursors that may contact the lower chamber space 114 to produce undesirable deposits / contaminants / particles that may then be reintroduced into the reaction space 112, thereby providing a source of contamination to substrates disposed within the reaction space.

[0026] In various embodiments, although the seal member 129 extending between the susceptor 130 and the chamber sidewall 111 of the reaction chamber 110, and / or at least a partial seal formed by direct contact between the susceptor 130 and the chamber sidewall 111 of the reaction chamber 110, may limit or substantially prevent fluid communication between the reaction space 112 and the lower chamber space 114 through the space 108, a small amount of precursor gas may still be able to enter the lower chamber space 114 by diffusion, which may result in corrosion, undesirable deposition, and contaminants within the lower chamber of the reaction chamber of the reactor system.

[0027] In various embodiments, the susceptor 130 may include one or more pin holes 137. Each pin hole 137 may extend through the susceptor 130 from its top surface (e.g., the substrate support surface 135 on which the substrate 150 may be placed for processing) to its bottom surface 136. The susceptor's top surface (e.g., the substrate support surface 135) may be the surface of the susceptor 130 adjacent to the reaction space 112 of the reaction chamber 110. The susceptor's bottom surface 136 may be the surface of the susceptor 130 adjacent to the lower chamber space 114 of the reaction chamber 110. In the absence of lift pins disposed in the pin holes 137, the reaction space 112 and the lower chamber space 114 may be in fluid communication with each other through the pin holes 137. That is, the pin holes 137 may be in fluid communication with the reaction space 112 and the lower chamber space 114.

[0028] A lift pin 140 (or other similar object) may be disposed within each pin hole 137. Each lift pin may include a lift pin body configured to penetrate at least a portion of the pin hole 137 when disposed within the pin hole 137. The lift pin body can have a cross-sectional shape complementary to the cross-sectional shape of the pin hole 137. In various embodiments, the top surface of each lift pin can be configured to contact the substrate 150 and move the substrate 150 relative to the susceptor 130. For example, the lift pin 140 can move the substrate 150 up or down relative to the susceptor 130 (i.e., increase or decrease the space between the substrate 150 and the susceptor 130). Placing the substrate on the lift pin can facilitate loading or unloading the substrate from the reaction chamber, for example, through an opening in the chamber sidewall (e.g., opening 98).

[0029] As discussed, the substrate 150 and the susceptor 130 may be movable relative to one another. For example, in various embodiments, one or more lift pins 140 can be configured to separate the substrate 150 from the susceptor 130 and place the substrate 150 in contact with (i.e., supported by) the susceptor 130. In various embodiments, the susceptor 130 can be moved up and down, e.g., by the susceptor elevator 104, such that the susceptor 130 moves relative to the substrate 150. In various embodiments, the lift pins 140 can be moved up and down, e.g., by the lift pin elevator / platform 142, such that the substrate 150 moves relative to the susceptor 130. In various embodiments, the susceptor 130 and / or the lift pins 140 can be stationary while the other moves. In various embodiments, the susceptor 130 and / or the lift pins 140 can be configured to move relative to the other.

[0030] In various embodiments, the reactor system may include a susceptor (e.g., susceptor 130). A substrate (e.g., substrate 150) may be placed directly on top of the susceptor (e.g., on the substrate support surface 135 of the susceptor 130) for processing. In various embodiments, the top surface of the susceptor may be positioned coplanar with the substrate support surface 135. In various embodiments, the substrate support surface may form a recess in the susceptor such that a recess exists in the top surface of the susceptor. The recess, including the substrate support surface 135, may have a height such that at least a portion of the height of the substrate 150 is positioned within the recess. The recess may have a height such that when the substrate is positioned on the substrate support surface and within the recess, the top surface of the substrate is coplanar with the top surface of the susceptor.

[0031] In various embodiments, once the substrate 150 is placed on the lift pins 140, the susceptor 130 can move from the loading position 103 to the processing position 106 and receive the substrate 150 during such movement. In such embodiments, the pin upper ends and / or pin heads or top surfaces of the lift pins 140 can be received by the pin holes 137 (pin holes 337 in FIG. 3 ), and thus the substrate 150 can directly contact the susceptor 130. In various embodiments, once the substrate 150 is placed on the lift pins 140, the lift pins 140 can move downward into the susceptor 130, such that the substrate 150 is received by the susceptor 130 (i.e., the substrate 150 rests on the substrate support surface 135). Accordingly, the pin upper ends (e.g., pin upper ends 310 of the lift pins 300) can be flush with and / or below the substrate support surface 135. The substrate 150 can then be processed in a reaction chamber.

[0032] During processing of a substrate on a susceptor, an electric field can be formed at or around one or more portions of the susceptor. Without being bound by theory, differences in the electric field near various portions of the susceptor can result in different processing of the substrate at those portions of the susceptor. For example, during a deposition process (e.g., ALD), differences in the electric field near the edge of the susceptor and the electric field near the center of the susceptor can result in different material deposition on the substrate near the edge and the substrate near the center of the susceptor.

[0033] In various embodiments, the reactor may include one or more tuning circuits to enable adjustment of the electric field at or around one or more portions of a susceptor within the reactor. The tuning circuit may be coupled to the susceptor. In various embodiments, the tuning circuit may include an electrode and a resonant circuit coupled to the electrode. The electrode of the tuning circuit may be coupled to the susceptor of the reactor and / or disposed within the susceptor of the reactor. The electrode may be electrically coupled to the resonant circuit, for example, by wiring (e.g., metal wiring), such that current can flow from the electrode to the resonant circuit. The resonant circuit may be grounded.

[0034] In various embodiments, the resonant circuit may include at least one capacitor and / or at least one inductor. The resonant circuit may include a capacitor with a fixed capacitance and / or a capacitor with a variable capacitance. Similarly, the resonant circuit may include an inductor with a fixed inductance and / or an inductor with a variable inductance. Each resonant circuit coupled to the susceptor may include an impedance level produced by the capacitor and the inductor. The impedance level of the resonant circuit may be adjustable, for example, by adjusting the capacitance of the capacitor and / or the inductance of the inductor.

[0035] In various embodiments, an electrode of a tuned circuit may be coupled to or contained within a susceptor such that the electrode occupies, extends through, and / or is near a specific portion of the susceptor (e.g., a specific portion of the substrate-supporting surface of the susceptor). A reactor may include multiple electrodes coupled to or contained within the susceptor, and the electrodes may extend through, or be located at or near, different portions of the susceptor and / or different portions of the substrate-supporting surface of the susceptor. The electrodes may extend along the same plane (e.g., a plane near, adjacent, parallel, and / or adjacent to the substrate-supporting surface of the substrate). The electrodes may be positioned within the susceptor such that the plane along which the electrode extends is approximately 0.1 centimeters (cm) away from the substrate-supporting surface of the susceptor within the susceptor body ("approximately" in this context means plus or minus 0.05 cm).

[0036] The first electrode of the first tuned circuit may be at or near an outer (i.e., edge) portion of the susceptor or susceptor substrate support surface, and the second electrode of the second tuned circuit may be at or near an inner (i.e., central) portion of the susceptor or susceptor substrate support surface. As another example, the susceptor or susceptor substrate support surface may be divided into quadrants or portions, and an electrode of each tuned circuit may be located at, near, or extending along each quadrant or portion of the susceptor or susceptor substrate support surface. Each electrode may be coupled to a respective resonant circuit.

[0037] 2A and 2B, the reactor system 100 can include a first tuned circuit 200A and a second tuned circuit 200B. The first tuned circuit 200A can include a first electrode (edge ​​electrode 210) coupled to a first resonant circuit 250A. The edge electrode 210 and the first resonant circuit 250A can be electrically coupled, for example, by a wire 215, so that a current can flow between the edge electrode 210 and the first resonant circuit 250A. The edge electrode 210 can be coupled to the susceptor 130 and / or can be included within the susceptor 130 (i.e., within the susceptor body of the susceptor 130). In various embodiments, the edge electrode can be at least partially enclosed within the body of the susceptor 130 and can be near, adjacent to, proximate to, or extend along the substrate support surface (substrate support surface 135) of the susceptor. An edge electrode may extend along at least a portion of an outer portion of the susceptor. For example, edge electrode 210 may be disposed at or near and extend at least partially along an outer portion of susceptor 130. As another example, and still referring to FIG. 3 , edge electrode 310 (an example of edge electrode 210) may be disposed at outer portion 333 of susceptor 330. The outer portion of the susceptor may be closer to the outer edge of the susceptor than the inner or central portion of the susceptor (e.g., the closer outer edge 132 of susceptor 130, or outer edge 332 of susceptor 330). For example, the outer portion of the susceptor may be a portion that extends along or near the outer edge of the susceptor, and may be, for example, about one-sixth, one-fifth, one-quarter, one-third, one-half, or more than one-half of the distance from the outer edge of the susceptor toward the center of the susceptor (i.e., on a circular susceptor, along the radius of the susceptor starting from the outer edge and extending toward the center of the susceptor).

[0038] An edge electrode (e.g., edge electrode 210 or 310) may be defined by an outer edge (e.g., outer edge 314 of edge electrode 310). The outer edge of the edge electrode can at least partially define a first shape. For example, outer edge 314 of edge electrode 310 defines a circle. As another example, with reference to FIG. 4, the outer edge of each of four edge electrodes 410A-410D (outer edges 414A-414D, respectively) partially defines a circle. The shape at least partially defined by the outer edge of the edge electrode may be any suitable shape (e.g., circle, square, rectangle, oval, hexagon, etc.).

[0039] In various embodiments, the inner boundary of the edge electrode may be defined by the inner edge of the edge electrode (e.g., inner edge 312 of edge electrode 310). The edge electrode body may extend between the inner edge and the outer edge. The inner edge of the edge electrode may at least partially define a second shape. For example, the inner edge 312 of edge electrode 310 defines a circle. The second shape defined at least in part by the inner edge of the edge electrode may define an edge electrode gap. The edge electrode gap may be at least partially surrounded by the edge electrode and / or the inner edge of the edge electrode. The edge electrode gap may be disposed within a first shape defined by the outer edge of the edge electrode and / or within a second shape defined by the inner edge of the edge electrode. For example, the inner edge 312 of edge electrode 310 may define an edge electrode gap 317, which is surrounded by edge electrode 310. Similarly, the edge electrode void 317 can be disposed within a first shape defined by the outer edge 314 of the edge electrode 310 and / or within a second shape defined by the inner edge 312 of the edge electrode 310. As another example, with reference to Figure 4, the inner edges of each of the four edge electrodes 410A-410D (inner edges 412A-412D, respectively) partially define a shape (a circle). An edge electrode void (e.g., edge electrode void 417) may be at least partially surrounded by each of the edge electrodes 410A-410D and / or each of the inner edges 412A-412D of each of the edge electrodes 410A-410D. The edge electrode voids 417 can be disposed within a shape defined in part by the outer edges 414A-414D of the edge electrodes 410A-410D and / or within a shape defined in part by the inner edges 412A-412D of the edge electrodes 410A-410D. The shape defined at least in part by the inner edges of the edge electrodes can be any suitable shape (e.g., circle, square, rectangle, oval, hexagon, etc.).

[0040] In various embodiments, the edge electrode body may extend any suitable length between the outer edge (e.g., outer edge 314) and the inner edge (e.g., inner edge 312). The edge electrode body may extend, for example, a length between the outer edge and the inner edge of about 2 centimeters (cm), 4 cm, 7 cm, or 10 cm ("about" in this context means plus or minus 1 cm). The length between the outer edge and the inner edge of the edge electrode may be constant (as shown by edge electrode 310) or variable.

[0041] In various embodiments, the outer edge of the edge electrode may be radially outward (relative to a center point of the edge electrode or the shape defined by the susceptor shape) of the outer edge of the susceptor (or the outer edge of the susceptor's substrate support surface) such that the outer edge of the edge electrode protrudes further than the shape defined by the outer edge of the susceptor (or the shape defined by the susceptor's substrate support surface). In various embodiments, the outer edge of the edge electrode may be flush with the outer edge of the susceptor (or the susceptor's substrate support surface). In various embodiments, the outer edge (e.g., outer edge 314) of an edge electrode (e.g., edge electrode 310) may be radially inward of the outer edge of the susceptor (susceptor outer edge 332) or of the outer edge of the susceptor's substrate support surface such that the outer edge of the susceptor, or the outer edge of the susceptor's substrate support surface, is positioned further radially outward than the outer edge of the edge electrode.

[0042] In various embodiments, any suitable number of electrodes may be positioned at or near a particular portion of the susceptor or may be coupled thereto. That is, one electrode may be coupled to and / or positioned within any suitable portion of the susceptor, extending over or occupying a respective portion of the susceptor or its substrate-supporting surface. Another electrode may similarly be coupled to and / or positioned at another suitable portion of the susceptor, extending over or occupying a different respective portion of the susceptor or its substrate-supporting surface, which is a different portion from that occupied by the first electrode. In various embodiments, such electrodes may extend along the same plane. For example, the outer portion 333 of the susceptor 330 may be divided into halves, thirds, quarters, fifths, sixths, etc., with edge electrodes positioned at or near or coupled to each portion of the outer portion of the susceptor. For example, as shown in FIG. 4, the outer portion of the susceptor may be divided into four sections, with one of the edge electrodes 410A-410D positioned in or adjacent to each quarter of the susceptor. The edge electrodes occupying the outer portion of the susceptor, or the substrate support surface of the susceptor, may be arranged around a central point and equidistant from one another. In various embodiments, the edge electrodes may be adjacent to one another, or they may be spaced apart. In various embodiments, the edge electrodes (e.g., edge electrodes 410A-410C) may be spaced apart from one another by any suitable distance, e.g., about 0.1 cm, 0.5 cm, 1.0 cm, or 3.0 cm ("about" in this context means plus or minus 0.1 cm). The segmented electrodes (e.g., edge electrodes 410A-410D) positioned on the outer portion of the susceptor may have any suitable arrangement, e.g., column, row, and / or grid pattern.

[0043] In various embodiments, the second tuned circuit 200B may include a second electrode (center electrode 220) coupled to the second resonant circuit 250B. The second electrode of the second tuned circuit 200B may be disposed on or near a portion of the susceptor 130 and / or a portion of the susceptor support surface 135 different from the first electrode. The center electrode 220 and the second resonant circuit 250B may be electrically coupled, for example, by a wire 235, such that current can flow between the center electrode 220 and the second resonant circuit 250B. The center electrode 220 may be coupled to the susceptor 130 and / or may be included within the susceptor 130 (i.e., within the susceptor body of the susceptor). In various embodiments, the center electrode may be at least partially enclosed within the body of the susceptor and may extend near, adjacent to, proximate to, or parallel to the substrate support surface (substrate support surface 135) of the susceptor. The center electrode may extend along the same plane as the edge electrodes.

[0044] In various embodiments, the center electrode may extend along at least a portion of the inner portion of the susceptor. For example, the center electrode 220 may be located at or near the inner portion of the susceptor 130. As another example, and still referring to FIG. 3 , the center electrode 320 (an example of the center electrode 220) may be located at the inner portion 331 of the susceptor 330. The inner portion of the susceptor may be closer to the center of the susceptor than the outer portion of the susceptor. For example, the outer portion of the susceptor, as described herein, may be a portion that extends within or is at least partially surrounded by the outer portion of the susceptor (e.g., outer portion 333), e.g., approximately half, two-thirds, three-quarters, four-fifths, five-sixths, or more of the length from the center of the susceptor to the outer edge of the susceptor (e.g., for a circular susceptor, such distance would be the radial distance from the center of the susceptor).

[0045] A center electrode (e.g., center electrode 220 or 320) may be defined by an outer edge (e.g., outer edge 334 of center electrode 320). The outer edge of the center electrode may at least partially define a first shape. For example, outer edge 324 of center electrode 320 defines a circle. As another example, with reference to FIG. 4, the outer edge of each of four center electrodes 420A-420D (outer edges 424A-424D, respectively) partially defines a circle. The shape at least partially defined by the outer edge of the center electrode may be any suitable shape (e.g., circular, square, rectangular, oval, hexagonal, etc.).

[0046] Similar to the edge electrodes described herein, in various embodiments, any suitable number of electrodes may be positioned at or near a particular portion of the susceptor, or may be coupled to it. For example, the inner portion 331 of the susceptor 330 may be divided into halves, thirds, quarters, fifths, sixths, etc., with a center electrode positioned at or near or coupled to each portion of the outer portion of the susceptor. For example, as shown in FIG. 4, the inner portion of the susceptor is divided into four quarters, with one of the center electrodes 420A-420D positioned at or near, coupled to, or extending along each quarter of the susceptor. The center electrodes occupying the inner portion of the susceptor, or the substrate-supporting surface of the susceptor, may be arranged around a central point and equidistant from one another. The center electrodes may be adjacent to one another, or they may be spaced apart. In various embodiments, the center electrodes (e.g., center electrodes 420A-420C) may be spaced apart from one another by any suitable distance, such as about 0.1 cm, 0.5 cm, 1.0 cm, or 3.0 cm (in this context, "about" means plus or minus 0.1 cm). The segmented electrodes (e.g., center electrodes 420A-420D) disposed in the interior portion of the susceptor may have any suitable arrangement, such as columns, rows, and / or grid patterns.

[0047] In various embodiments, the center electrode (e.g., center electrode 220 or 320) may be at least partially disposed within a shape defined at least in part by the outer edge or inner edge of the edge electrode (e.g., edge electrode 210 or 310). In various embodiments, the center electrode (e.g., center electrode 220 or 320) may be at least partially disposed within an edge electrode gap (e.g., edge electrode gap 317). There may be a space between the center electrode and the edge electrode. For example, with reference to FIG. 3 , the inner edge 312 of edge electrode 310 may be spaced from the outer edge 324 of center electrode 320. In various embodiments, the edge electrode may be spaced from the center electrode by any suitable distance, for example, about 0.1 cm, 0.5 cm, 1.0 cm, or 3.0 cm (in this context, "about" means plus or minus 0.1 cm). In various embodiments, the center electrode and the edge electrode may be adjacent to each other.

[0048] The electrodes disposed within or coupled to the susceptor may be arranged in any suitable configuration or arrangement. In various embodiments, the shape defined by the inner or outer edge of an edge electrode may be concentric with the shape defined by the outer edge of the center electrode. For example, as illustrated in FIG. 3 , the shape defined by the outer edge 314 and inner edge 312 of edge electrode 310 may be concentric with the shape defined by the outer edge 324 of center electrode 320. As with edge electrode 310 and center electrode 320, the edge and center electrodes may be concentric. In various embodiments, the center electrode may include a void therethrough, similar to the void in the edge electrode. The void in the center electrode may be located at any suitable location through the center electrode. In various embodiments, there may be two or more electrodes disposed radially outward of the center electrode. For example, there may be three or more electrodes disposed radially inward of one another. As another example, the three or more electrodes may define concentric circular shapes. In various embodiments, the electrodes coupled to and / or disposed within the susceptor may comprise other arrangements, such as rows, columns, grids, and / or random arrangements of electrodes in one or more portions of the susceptor.

[0049] In various embodiments, each tuned circuit in the reactor may comprise a resonant circuit. The resonant circuit may be coupled to one or more electrodes. For example, resonant circuit 250A may be coupled to edge electrode 210 (or edge electrode 310). Similarly, a resonant circuit may be coupled to one or more edge electrodes 410A-410B, or each of edge electrodes 410A-410B may be coupled to one or more resonant circuits. As another example, resonant circuit 250B may be coupled to center electrode 220 (or center electrode 320). Similarly, a resonant circuit may be coupled to one or more center electrodes 420A-420B, or each of center electrodes 420A-420B may be coupled to one or more resonant circuits. The resonant circuits may be coupled to the electrodes in the tuned circuit by wiring (e.g., wiring 215 or 235), which may include a metal or metal alloy. In various embodiments, the wiring coupling the resonant circuit to the electrode may include a dielectric material along at least a portion of the wiring. For example, the wiring coupling the resonant circuit to the electrode may include a dielectric material disposed along a portion of the wiring near and / or adjacent to the resonant circuit.

[0050] Each resonant circuit of the tuned circuit may comprise an inductor and / or a capacitor. The inductors may be any suitable inductors. The capacitors may be any suitable capacitors. In various embodiments, the inductors may have any suitable level of inductance, for example, from 1 nanohenry (nH) to 1 microhenry (μH). In various embodiments, the capacitors may have any suitable level of capacitance, for example, from 0.1 picofarads (pF) to 1 microfarad (μF).

[0051] In various embodiments, a resonant circuit within a tuned circuit may include one or more inductors and / or one or more capacitors. The inductors and / or capacitors may be arranged in any suitable configuration. For example, an inductor and / or capacitor may be in series or parallel with any other inductors and / or capacitors. As shown in FIGS. 2A and 2B , resonant circuits 250A and 250B each include an inductor (e.g., inductor 254A for resonant circuit 250A and inductor 254B for resonant circuit 250B) and a capacitor (e.g., capacitor 252A for resonant circuit 250A and capacitor 252B for resonant circuit 250B). Additionally, resonant circuits 250A and 250B may each include another capacitor (e.g., another capacitor 256A for resonant circuit 250A and another capacitor 256B for resonant circuit 250B). In various embodiments, at least one inductor and / or capacitor may be adjustable, thereby allowing the impedance of the resonant circuit to be adjustable. As shown in FIGS. 2A and 2B, another capacitor 256A of resonant circuit 250A and another capacitor 256B of resonant circuit 250B are adjustable.

[0052] The resonant circuit of the tuned circuit can be located in any suitable location in the reactor or reactor system. For example, the resonant circuit (e.g., resonant circuits 250A and 250B in FIGS. 2A and 2B) can be external to the reactor and reaction chamber (e.g., reaction chamber 110). In various embodiments, the resonant circuit can be included in the reactor and / or reaction chamber. Wiring (e.g., wires 215 and 235) can connect the resonant circuit to respective electrodes included in the reaction chamber and / or susceptor. In various embodiments, the resonant circuit can be coupled to ground such that the resonant circuit is coupled between the electrode and ground. For example, as shown in FIGS. 2A and 2B, resonant circuit 250A can be coupled to ground 257A, and resonant circuit 250B can be coupled to ground 257B.

[0053] During substrate processing (e.g., during atomic layer deposition, chemical vapor deposition (CVD), etc.), an electric field can form around the susceptor (e.g., susceptor 130) and the susceptor substrate support surface (e.g., substrate support surface 135) when electrons travel from the distribution system (e.g., showerhead 180) to the susceptor. As described herein, the electric field around different portions of the susceptor or susceptor substrate support surface may be different, potentially causing different processing results at different portions of the substrate corresponding to different nearby electric fields. For example, the electric field near an outer portion of the substrate and / or susceptor (e.g., outer portion 333 of susceptor 330 in FIG. 3 ) may be different from the electric field near an inner portion of the substrate and / or susceptor (e.g., inner portion 331 of susceptor 330 in FIG. 3 ). Thus, in an ALD process, for example, deposition of material on an outer portion of the substrate (near the outer portion of the susceptor) may be different (e.g., greater) than deposition of material on an inner portion of the substrate (near the inner portion of the susceptor). To avoid such differences in substrate processing (e.g., deposition of material during ALD), the electric field near different portions of the substrate and / or susceptor can be adjusted.

[0054] 5, a method 500 for processing a substrate in a reaction chamber is illustrated, according to various embodiments. It should also be understood that embodiments of the present disclosure may be utilized in reaction chambers configured for numerous deposition processes, including, but not limited to, ALD, CVD, metalorganic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and physical vapor deposition (PVD). Embodiments of the present disclosure may also be utilized in reaction chambers configured to process a substrate with reactive precursors, which may also include etching processes such as reactive ion etching (RIE), inductively coupled plasma etching (ICP), and electron cyclotron resonance etching (ECR).

[0055] 2A, 2B, and 3, a substrate (e.g., substrate 150) may be placed in a reaction chamber (e.g., reaction chamber 110) (step 502). In various embodiments, substrate 150 may be placed directly on the substrate support surface 135 of susceptor 130. In various embodiments, substrate 150 may be placed on lift pins 140 that protrude from the substrate support surface 135 of susceptor 130. In such embodiments, lift pins 140 and / or susceptor 130 can be moved relative to one another so that substrate 150 is placed directly on and in contact with substrate support surface 135, such that the upper ends of the lift pins are flush with or lower than the substrate support surface 135 of susceptor 130. In various embodiments, the lift pins 140 may receive the substrate 150, and the susceptor 130 may move upward while the lift pins 140 remain stationary so that the lift pins 140 recess into the susceptor 130 and pin holes 137, and the susceptor 130 receives the substrate 150 on the substrate support surface 135, positioning the susceptor 130 at the processing position 106 within the reaction space 112.

[0056] To avoid differences in the electric field near different portions of the susceptor and substrate, the reactor may include one or more tuned circuits. Each tuned circuit may include one or more electrodes coupled to and / or disposed within the susceptor. Each electrode may extend near a portion of the susceptor and / or the susceptor-substrate support surface, as described herein. Each electrode may be coupled to a resonant circuit included in the respective tuned circuit, which has an adjustable impedance and allows electricity to flow through the respective tuned circuit. Thus, by adjusting the impedance of the resonant circuit (and thereby the electrode coupled to it), and the resulting change in electricity flowing through the respective tuned circuit, the electric field near each electrode can be adjusted. For example, as described herein with respect to Figures 2A, 2B, and 3, the edge electrode 210 may be coupled to and / or disposed within the susceptor 130 at an outer portion of the susceptor 130 (e.g., outer portion 333 of the susceptor 330), and the center electrode 220 may be coupled to and / or disposed within the susceptor 130 at an inner portion of the susceptor 130 (e.g., outer portion 331 of the susceptor 330).

[0057] In various embodiments, to avoid differences in substrate processing near different portions of the substrate and susceptor, the impedance of a resonant circuit (included in the tuned circuit) coupled to the susceptor and / or to an electrode disposed within the susceptor can be adjusted (step 504). Adjusting the impedance of the resonant circuit of the tuned circuit can adjust the flow of electricity through the tuned circuit resulting from electricity received at each electrode. For example, the impedance of the resonant circuit can be adjusted by adjusting the inductance of an inductor included in the resonant circuit and / or by adjusting the capacitance of a capacitor included in the resonant circuit. As another example, to adjust the electric field around an outer portion of the susceptor 130 (e.g., outer portion 333 of susceptor 330), the capacitance of another capacitor 256A (which is part of resonant circuit 250A coupled to edge electrode 210, which extends across at least a portion of the outer portion of susceptor 130 and / or substrate support surface 135) can be adjusted. By doing so, the impedance of resonant circuit 250A and / or edge electrode 210 may be adjusted, thereby changing the flow of electricity through tuned circuit 200A. Thus, the electric field around edge electrode 210 (as well as the electric field around outer portions of susceptor 130 and substrate 150) is adjusted (step 506). Similarly, to adjust the electric field around an inner portion of susceptor 130 (e.g., inner portion 331 of susceptor 330), the capacitance of another capacitor 256B (which is part of resonant circuit 250B that couples to center electrode 220, which extends across at least a portion of the inner portion of susceptor 130 and / or substrate support surface 135) may be adjusted. By doing so, the impedance of resonant circuit 250B and / or center electrode 220 may be adjusted, thereby changing the flow of electricity through tuned circuit 200B. Thus, the electric field around the center electrode 220 (as well as the electric field around the inner portions of the susceptor 130 and substrate 150) is adjusted.Further referring to FIG. 4, the impedance of the resonant circuit coupled to each of the edge electrodes 410A-410D may be adjusted to adjust the electric field near the edge electrodes 410A-410D (as well as near the outer portions of the susceptor 130 and substrate 150), and the impedance of the resonant circuit coupled to each of the center electrodes 420A-420D may be adjusted to adjust the electric field near the center electrodes 420A-420D (as well as near the inner portions of the susceptor 130 and substrate 150).

[0058] The impedance of the resonant circuit can be adjusted to produce desired electric fields around different portions of the susceptor and substrate corresponding to the electrodes adjacent thereto (e.g., to minimize the difference between the electric fields adjacent different portions of the susceptor and substrate). For example, the impedance of resonant circuits 250A and 250B may be adjusted to minimize the difference between the electric field around edge electrode 210 (and around outer portions of susceptor 130 and substrate 150) and the electric field around center electrode 220 (and around inner portions of susceptor 130 and substrate 150).

[0059] In response, the substrate may be treated by achieving desired electric fields adjacent different portions of the susceptor and substrate (step 508).

[0060] 6A-6D show plots of the electric field on the wafer (i.e., substrate) varying the impedance near the inner portion of the susceptor (near the center electrode) and the outer portion of the susceptor (near the edge electrode). As shown in plots 610, 620, 630, and 640, "Z_C" is the impedance (Ω) of the center electrode and its respective tuning circuit (example of tuning circuit 250B and center electrode 220), and "Z_E" is the impedance (Ω) of the edge electrode and its respective tuning circuit (example of tuning circuit 250A and edge electrode 210). As can be seen, the electric field begins to change near a radial position of 140 mm on the substrate (caused by the effect of the edge electrode impedance), indicating that the inner portion of the substrate extends from the 0 mm radial position of the substrate to approximately 140 mm radial position, and the outer portion of the substrate extends from the 140 mm radial position of the substrate to approximately 170 mm radial position. In each plot 610, 620, 630, and 640, the impedance of the center electrode is kept constant (500 Ω for plot 610, 100 Ω for plot 620, 10 Ω for plot 630, and 1 Ω for plot 640), while the impedance of the edge electrodes is varied (in three steps of 100, 10, and 1 Ω for each plot).

[0061] As shown in plots 610, 620, 630, and 640, lower impedance of the center electrode (from 500 Ω in plot 610 to 1 Ω in plot 640) has little effect on the electric field between the center electrode, the edge electrode, and the outer portion of the substrate. That is, when the impedance of the center electrode is relatively low, there is little change (or a more predictable change) in the electric field moving from the center electrode to the edge electrode. Therefore, a relatively low impedance of the center electrode makes the electric field around the edge electrode easier to control (and / or more predictable). Thus, the edge profile can be controlled without significantly changing the total input power into the resonant circuit that couples to the edge circuit or into the tuned circuit that includes the edge electrode.

[0062] The impedance of the edge electrodes may include any suitable level, for example, between 0 ohms (Ω) and 10 kΩ. The impedance of the center electrode may include any suitable level, for example, between 0 ohms (Ω) and 10 kΩ.

[0063] While exemplary embodiments of the present disclosure are described herein, it should be understood that the disclosure is not limited thereto. For example, while the reactor system is described in connection with various specific configurations, the disclosure is not necessarily limited to these examples. Various changes, modifications, and improvements to the systems and methods described herein can be made without departing from the spirit and scope of the disclosure.

[0064] The subject matter of the present disclosure includes all novel and non-obvious combinations and subcombinations of the various systems, components, and configurations, as well as other features, functions, operations, and / or properties disclosed herein, and any and all equivalents thereof. [Explanation of symbols]

[0065] 4. Reaction Chamber 6 Susceptor 8 Gas Distribution System 10, 12 Reactant Source 14 Carrier and / or purge gas source 16~20 lines 22~26 Controller 28 Vacuum source 30 Base material 50, 100 reactor systems 103 Loading position 106 Processing location 108 Space 110 Reaction Chamber 111 Chamber side wall 112 Reaction space (upper chamber) 114 Lower chamber space (lower chamber) 129 Sealing material 130 Susceptor 132 outer edge of susceptor 135 Base material support surface 137 pin hole 140 Lift Pin 142 Lift Pin Elevator / Platform 150 Base material 180 shower head 200A First Tuned Circuit 200B Second tuning circuit 210 First electrode (edge ​​electrode) 215, 235 Wire, wiring 220 Second electrode (center electrode) 250A First Resonant Circuit 250B Second resonant circuit 252A, 252B capacitors 254A, 254B inductors 256A, 256B capacitors 257A, 257B grounding 300 Lift Pin 310 Top end of pin 312 Inner edge of edge electrode 314 Outer edge of edge electrode 317 Edge electrode gap 320 center electrode 324 Outer edge of center electrode 330 Susceptor 331 Inner part of susceptor 332 outer edge of susceptor 333 Outer part of susceptor 410A~410D Edge electrode 412A~412D Inner edge of edge electrode 414A~414D Outer edges of edge electrodes 420A~420D Center electrode 417 Edge electrode gap

Claims

1. 1. A susceptor assembly for a reactor system, comprising: a susceptor body defined by an outer edge of a susceptor, the susceptor body comprising an outer susceptor portion and an inner susceptor portion, the outer susceptor portion being adjacent the outer edge of the susceptor and the inner susceptor portion being at least partially enclosed within the outer susceptor portion; a first tuning circuit comprising an edge electrode and a first resonant circuit coupled to the edge electrode, the edge electrode being coupled to the susceptor body; a second tuning circuit comprising a center electrode and a second resonant circuit coupled to the center electrode, the center electrode being coupled to the susceptor body; the edge electrode is positioned closer to an outer edge of the susceptor than the center electrode; A susceptor assembly for a reactor system, wherein the impedance of the first resonant circuit and the impedance of the second resonant circuit are adjusted to make the impedance of the center electrode lower than the impedance of the edge electrode so as to minimize the difference between the electric field around the edge electrode and the electric field around the center electrode.

2. The susceptor assembly of claim 1 , wherein the first resonant circuit comprises at least one of a first capacitor and a first inductor.

3. the first capacitor has a first adjustable capacitance; and The susceptor assembly of claim 2 , wherein the first inductor has a first adjustable inductance.

4. The susceptor assembly of claim 3 , wherein the first resonant circuit further comprises a first additional capacitor.

5. The susceptor assembly of claim 1 , wherein the second resonant circuit comprises at least one of a second capacitor and a second inductor.

6. the second capacitor has a second adjustable capacitance; and The susceptor assembly of claim 5 , wherein the second inductor has a second adjustable inductance.

7. The susceptor assembly of claim 6 , wherein the second resonant circuit further comprises a second separate capacitor.

8. The susceptor assembly of claim 1 , wherein the edge electrode extends along at least a portion of an outer portion of the susceptor.

9. a second edge electrode extending along a second portion of the outer portion of the susceptor, the second portion of the outer portion of the susceptor being different from the portion of the outer portion of the susceptor along which the edge electrode extends; the second edge electrode is included in the first tuned circuit and is coupled to the first resonant circuit; or The susceptor assembly of claim 8 , wherein the second edge electrode is at least one of: included in a third tuned circuit and coupled to a third resonant circuit of the third tuned circuit.

10. 9. The susceptor assembly of claim 8, wherein the first tuning circuit further comprises a first wiring coupled between the edge electrode and the first resonant circuit, and the second tuning circuit further comprises a second wiring coupled between the center electrode and the second resonant circuit.

11. 9. The susceptor assembly of claim 8, wherein an outer edge of the edge electrode at least partially defines a first shape, and an edge electrode void is disposed within the first shape and is at least partially surrounded by the edge electrode.

12. The susceptor assembly of claim 11 , wherein the center electrode is defined by an outer edge of the center electrode and is disposed on and extends at least partially across an inner portion of the susceptor.

13. The susceptor assembly of claim 12 , wherein the center electrode is disposed at least partially within a gap in the edge electrode.

14. a second central electrode disposed at least partially within the gap of the edge electrode and extending to a second portion of the inner portion of the susceptor, the second portion of the inner portion of the susceptor being different from the portion of the inner portion of the susceptor through which the central electrode extends; the second center electrode is included in the second tuned circuit and coupled to the second resonant circuit; or 14. The susceptor assembly of claim 13, wherein the second center electrode is included in a third tuned circuit and is coupled to a third resonant circuit of the third tuned circuit.

15. 14. The susceptor assembly of claim 13, wherein an outer edge of the center electrode at least partially defines a second shape, and wherein the first shape and the second shape are concentric.

16. a susceptor body defined by an outer edge of a susceptor, the susceptor body comprising an outer susceptor portion and an inner susceptor portion, the outer susceptor portion being adjacent the outer edge of the susceptor and the inner susceptor portion being within the outer susceptor portion; an edge electrode coupled to the susceptor body; a center electrode coupled to the susceptor body; the edge electrode is positioned closer to an outer edge of the susceptor than the center electrode; A susceptor for a reactor system, wherein the impedance of the center electrode and the impedance of the edge electrode are adjusted so that the impedance of the center electrode is lower than the impedance of the edge electrode so as to minimize the difference between the electric field around the edge electrode and the electric field around the center electrode.

17. the edge electrode extends along at least a portion of an outer portion of the susceptor and defines at least a portion of an edge electrode shape, the edge electrode at least partially enclosing an edge electrode gap; 17. The susceptor of claim 16, wherein the center electrode is defined by an outer edge of the center electrode, the center electrode being disposed on an inner portion of the susceptor and at least partially in a gap of the edge electrode.

18. 18. The susceptor of claim 17, wherein the edge electrode shape comprises a first circular shape and the outer edge of the center electrode comprises a second circular shape.

19. adjusting the impedance of at least one of the first resonant circuit or the second resonant circuit; adjusting a first electric field near a first electrode coupled to the first resonant circuit, the first electrode coupled to a susceptor, in response to the adjusting of the impedance of the first resonant circuit; and adjusting a second electric field proximate a second electrode coupled to the second resonant circuit in response to the adjusting of the impedance of the second resonant circuit, the second electrode coupling to the susceptor at a different portion than the first electrode; the first electrode extends along at least a portion of an outer portion of the susceptor, the outer portion of the susceptor being near an outer edge of the susceptor, and the second electrode is disposed on an inner portion of the susceptor, the inner portion of the susceptor being within the outer portion of the susceptor; wherein the first electric field and the second electric field are adjusted such that a difference between the first electric field and the second electric field is minimized by making the impedance of the second electrode lower than the impedance of the first electrode.

20. A reactor system comprising a susceptor assembly according to any one of claims 1 to 15 or a susceptor according to any one of claims 16 to 18.

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