Heat treatment apparatus for semiconductor workpieces and temperature control method

Abstract

To provide a semiconductor workpiece thermal treatment apparatus, and a temperature control and adjustment method.SOLUTION: The present disclosure provides a semiconductor workpiece thermal treatment apparatus and a temperature control and adjustment method. The thermal treatment apparatus comprises: one or more heating elements; a first roof plate including three or more first windows; a second roof plate including two or more second windows transmitting radiation having a wavelength of 2.7 μm; a workpiece support element positioned between the first roof plate and the second roof plate; and a temperature measurement assembly including one infrared emitter, at least two continuous reflection type infrared sensors and at least two transmissive infrared sensors. A surface of the first window at an intermediate position of the three or more first windows, the surface facing the second roof plate, includes reflection transmission coating. The thermal treatment apparatus according to the invention can accurately measure a temperature of a surface of the semiconductor workpiece, can individually control temperatures of different sites on the surface of the semiconductor workpiece, improves temperature control accuracy, and keeps temperature control deviation within ±1°C.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE The present disclosure relates to the field of semiconductor processing, and more particularly to the field of thermal processing of semiconductor workpieces. [Background technology]

[0002] The heat treatment process for semiconductor workpieces typically requires heating temperatures of around 400°C to 1200°C. Rapid thermal treatment processes typically use a lamp array to heat the semiconductor workpieces using a double-sided heating method. During the heat treatment process, reliable and accurate measurement of the workpiece temperature is extremely important. Summary of the Invention [Problem to be solved by the invention]

[0003] The present disclosure provides a thermal processing apparatus for semiconductor workpieces and a method for temperature control regulation. [Means for solving the problem]

[0004] According to one aspect of the present disclosure, there is provided a thermal processing apparatus for semiconductor workpieces, the apparatus comprising: one or more heating elements for heating the semiconductor workpiece; a first cover plate including three or more first windows; a second cover plate including two or more second windows that are transparent to radiation having a wavelength of 2.7 μm; a workpiece support element positioned between the first cover plate and the second cover plate for supporting the semiconductor workpiece; a temperature measurement assembly including an infrared emitter, at least two reflective infrared sensors in series, and at least two transmissive infrared sensors; wherein the three or more first windows include, in a horizontal direction away from the infrared emitter, a first window at a first position, at least one first window at an intermediate position, and a first window at an end position; The first window at the intermediate position has a reflective / transmissive coating on a surface facing the second cover plate.

[0005] According to another aspect of the present disclosure, there is provided a temperature control regulation method for thermal processing of a semiconductor workpiece, the method comprising: placing the semiconductor workpiece on a workpiece support element within a reaction chamber of a thermal processing apparatus; providing a first cover plate including three or more first windows, wherein the three or more first windows include, in a horizontal direction away from the infrared emitter, a first window at a first position, at least one first window at an intermediate position, and a first window at an end position; providing a second cover plate including two or more second windows, wherein a reflective / transmissive coating is provided on a surface of the at least one intermediate first window facing the second cover plate; emitting infrared radiation with an infrared emitter; transmitting the infrared radiation through a first window at the first location to illuminate a surface of the semiconductor workpiece; receiving and measuring, by a reflective infrared sensor, a first portion of the amount of infrared radiation reflected by at least two portions of the surface of the semiconductor workpiece, and receiving and measuring, by a transmissive infrared sensor, a second portion of the amount of infrared radiation transmitted by the at least two portions; determining the reflectance and transmittance of the semiconductor workpiece at the same location based on the amount of infrared radiation of a first portion and the amount of infrared radiation of a second portion, respectively, and calculating the emissivity of the semiconductor workpiece based on the reflectance and transmittance; calculating a temperature of the surface of the semiconductor workpiece at the same location based on the emissivity; and controlling and adjusting the heating element in the region of the corresponding portion in response to the temperature of the surface of the semiconductor workpiece.

[0006] It should be understood that the contents of this section are not intended to identify key features of the embodiments of the present disclosure, nor are they intended to limit the scope of the present disclosure. Other features of the present disclosure will be readily apparent from the following specification.

[0007] The drawings are for a better understanding of the present technical solution and are not intended to limit the present disclosure. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a top view of a heat treatment apparatus according to an embodiment of the present disclosure. [Figure 2] 1 is a cross-sectional view of a heat treatment apparatus according to an embodiment of the present disclosure. [Figure 3] FIG. 2 is a schematic diagram illustrating a lamp module partition in a heat treatment apparatus according to an embodiment of the present disclosure. [Figure 4] 1 is a schematic diagram illustrating positions of an infrared emitter, a reflective infrared sensor, and a transmissive infrared sensor in a heat treatment apparatus according to an embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0009]

[0023] Hereinafter, exemplary embodiments of the present disclosure will be described with reference to the drawings. Various details of the embodiments of the present disclosure will be included in the description to facilitate understanding, but these details should be considered merely as examples. Therefore, those skilled in the art should recognize that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of the present disclosure. Similarly, in the following description, descriptions of well-known functions and structures are omitted for clarity and conciseness.

[0010] The heat treatment process of the semiconductor workpiece described in the present disclosure may be, for example, a rapid thermal annealing process. Because different materials (e.g., Si, SiO2, SiN, etc.) on a semiconductor workpiece such as a wafer have different optical absorption coefficients, heating the surface of the semiconductor workpiece using a single-sided radiation method will cause a pattern effect. Therefore, in order to alleviate the problem of uneven heating of the wafer caused by the pattern effect, a double-sided heating method is usually used.

[0011] On the other hand, in the rapid thermal annealing process, a non-contact measurement method is used to measure the temperature of the semiconductor workpiece. Due to the installation of the heating element (e.g., lamp module) used for double-sided heating of the wafer, the semiconductor workpiece is completely covered by the radiation of the heating element. However, if the light emitted from the heating element is reflected and transmitted by the semiconductor workpiece, it will hinder the temperature measurement of the semiconductor workpiece by the non-contact measurement method, thereby improving the robustness of the temperature measurement.

[0012] At normal workpiece temperatures, semiconductor workpieces are generally transparent in the infrared band and do not emit significant blackbody radiation. Conventional radiation measurement methods have a large error in the measurable blackbody radiation emitted by the workpiece at temperatures below 750°C, making it difficult to measure the temperature of a semiconductor workpiece.

[0013] Heat Treatment Equipment

[0014] According to one aspect of the present disclosure, there is provided a thermal processing apparatus for semiconductor workpieces, the apparatus comprising: one or more heating elements for heating the semiconductor workpiece; a first cover plate including three or more first windows; a second cover plate including two or more second windows that are transparent to radiation having a wavelength of 2.7 μm; a workpiece support element positioned between the first cover plate and the second cover plate for supporting the semiconductor workpiece; a temperature measurement assembly including an infrared emitter, at least two reflective infrared sensors in series, and at least two transmissive infrared sensors; wherein the three or more first windows include, in a horizontal direction away from the infrared emitter, a first window at a first position, at least one first window at an intermediate position, and a first window at an end position; The first window surface at the intermediate position has a reflective / transmissive coating on the surface facing the second cover plate.

[0015] Specifically, as shown in FIGS. 1 and 2, a heat treatment apparatus according to one embodiment of the present disclosure includes a top plate 1, a bottom plate 11, an upper heat lamp module 3, a lower heat lamp module 12, an upper cover plate 4 having a window, a lower cover plate 13 having a window, a reaction chamber body 5, a workpiece support element (e.g., a quartz support plate 10 and an ejector pin 8), an infrared emitter 6 and at least two reflective infrared sensors (201, 202) provided on the outside of the top plate 1 (i.e., the side opposite the reaction chamber), at least two transmissive infrared sensors (901, 902) provided on the outside of the bottom plate 11 (i.e., the side opposite the reaction chamber), and a reaction chamber door 14.

[0016] Specifically, the upper cover plate 4 and the lower cover plate 13 of the present invention can both be made of high hydroxyl quartz cover plates with quartz windows, which can filter the 2.7 μm infrared light from the heat lamp module and reduce the impact of radiation from the heat lamp module on the temperature of the semiconductor workpiece.

[0017] At least three windows are provided in the top cover plate 4, of which the windows at both ends (i.e., the window at the first position and the window at the end position) 401 are not coated with a reflective / transmissive coating, and at least one window at an intermediate position 402 has a reflective / transmissive coating on the surface facing the semiconductor workpiece. In the present invention, the top cover plate 4 is preferably made of high-hydroxyl quartz, and the non-window region does not transmit infrared light with a wavelength of 2.7 μm, the window region can transmit infrared light with a wavelength of 2.7 μm, and the window region with the reflective / transmissive coating can reflect and transmit infrared light with a wavelength of 2.7 μm.

[0018] The reflective / transmissive coatings described above have a reflectivity of 10% to 50% (e.g., 15%, 20%, 25%, 30%, 35%, 40%, and 45%) and a transmittance of 50% to 90% (e.g., 55%, 60%, 65%, 70%, 75%, 80%, and 85%) for radiation with a wavelength of 2.7 μm.

[0019] According to one specific embodiment, the reflection-transmission coating may be a metal halide salt layer, preferably an alkali metal halide salt layer, more specifically a potassium bromide layer.

[0020] In the heat treatment apparatus of the present invention, an infrared emitter 6 capable of emitting infrared light with a wavelength of 2.7 μm to a semiconductor workpiece is provided at one end of the outer side of the top plate 1.

[0021] The infrared light emitted from the infrared emitter 6 passes through the window 401 at the first position in the top cover plate 4 and is irradiated onto a first portion of the surface of the semiconductor workpiece 7. Here, the semiconductor workpiece 7 reflects part of the infrared light of that wavelength and transmits part of it, and the infrared light that has passed through the first portion of the surface of the semiconductor workpiece is irradiated onto the window (401) in the bottom cover plate 13 and further passes through this window to the first transmission type infrared sensor (901). The infrared light reflected from the first portion of the surface of the semiconductor workpiece is irradiated onto the window (402) with a reflective-transmitting coating at the middle position in the top cover plate 4, is further reflected by this window, and is irradiated onto a second portion of the semiconductor workpiece, and the infrared light that has passed through the window (402) with a reflective-transmitting coating is transmitted to the first reflective type infrared sensor (201).

[0022] The infrared light reflected by the window (402) having the reflective-transmissive coating and irradiated onto a second portion of the semiconductor workpiece is further reflected and transmitted by the semiconductor workpiece, and the transmitted portion of the infrared light is irradiated onto the window in the lower cover plate and transmitted to the second transmissive infrared sensor, and the reflected portion of the infrared light is reflected by the window in the upper cover plate, which may or may not have a reflective-transmissive coating. If the window does not have a reflective-transmissive coating, the reflected portion of the infrared light is transmitted through the window to be irradiated onto the second reflective infrared sensor, while if the window has a reflective-transmissive coating, the infrared light is reflected and transmitted to the next portion of the semiconductor workpiece, and the process is repeated.

[0023] The heat treatment apparatus of the present invention uses only one infrared emitter and utilizes the reflective properties of the semiconductor workpiece and the reflective / transmissive coating, allowing for at least two reflections. By providing both a reflective sensor and a transmissive sensor at the same location, it is possible to instantly and accurately measure the temperature of multiple locations on the semiconductor workpiece, where the number of reflections can be determined according to the temperature control requirements. Therefore, by measuring as many measurement locations as possible, the accuracy of temperature measurement and control can be improved.

[0024] 3 and 4, the angles that the infrared emitter 6 (α), the reflective infrared sensor 2 (β), and the transmissive infrared sensor 9 (γ) make with the vertical axis of the semiconductor workpiece (or the vertical axis of the reaction chamber) may be 30° to 60°, for example, 45°. Here, the infrared emitter 6 and the transmissive infrared sensor 9 are on the same straight line.

[0025] The above-mentioned infrared emitter, reflective infrared sensor, and transmissive infrared sensor jointly constitute a semiconductor workpiece emissivity measurement system that is not affected by heat lamps, thereby helping to accurately measure the temperature of the semiconductor workpiece, especially in the temperature range of 400°C to 750°C.

[0026] Temperature control adjustment method

[0027] In accordance with another aspect of the present invention, there is provided a temperature control regulation method for thermal processing of a semiconductor workpiece, the method comprising:

[0028] placing the semiconductor workpiece on a workpiece support element within a reaction chamber of a thermal processing apparatus; providing a first cover plate including three or more first windows, wherein the three or more first windows include, in a horizontal direction away from the infrared emitter, a first window at a first position, at least one first window at an intermediate position, and a first window at an end position; providing a second cover plate including two or more second windows, wherein a reflective / transmissive coating is provided on a surface of the at least one intermediate first window facing the second cover plate; emitting infrared radiation with an infrared emitter; transmitting the infrared radiation through a first window at the first location to illuminate a surface of the semiconductor workpiece; receiving and measuring, by a reflective infrared sensor, a first portion of the amount of infrared radiation reflected by at least two portions of the surface of the semiconductor workpiece, and receiving and measuring, by a transmissive infrared sensor, a second portion of the amount of infrared radiation transmitted by the at least two portions; determining the reflectance and transmittance of the semiconductor workpiece at the same location based on the amount of infrared radiation of a first portion and the amount of infrared radiation of a second portion, respectively, and calculating the emissivity of the semiconductor workpiece based on the reflectance and transmittance; calculating a temperature of the surface of the semiconductor workpiece at the same location based on the emissivity; and controlling and adjusting the heating element in the region of the corresponding portion in response to the temperature of the surface of the semiconductor workpiece.

[0029] According to one specific embodiment, in the above step, the infrared radiation is transmitted through a first window (which does not have a reflective / transmissive coating) at the first position and irradiated onto a first portion of the surface of the semiconductor workpiece; a reflective infrared sensor receives and measures the amount of infrared reflected radiation of the first portion that is reflected by the semiconductor workpiece at the first position and transmitted through a first window (which has a reflective / transmissive coating) at an intermediate position; and a transmissive infrared sensor receives and determines the amount of infrared transmitted radiation of the first portion that is transmitted by the semiconductor workpiece at the first position and transmitted through a second window; a part of the infrared radiation reflected by the semiconductor workpiece at the first location and irradiated onto the first window at the intermediate position is reflected onto a second location on the surface of the semiconductor workpiece, the amount of infrared reflected radiation of the second portion is reflected by the semiconductor workpiece at the second location and passes through the first window at the intermediate or terminal position, and the amount of infrared transmitted radiation of the second portion is received and determined by a transmission type infrared sensor and passed through the second window; calculating the reflectance, transmittance, and emissivity of the semiconductor workpiece at the first location based on the amount of infrared reflected radiation of the first portion and the amount of infrared transmitted radiation of the first portion, and further calculating the temperature of the semiconductor workpiece at the first location; The emissivity of the semiconductor workpiece at the second location is calculated based on the amount of infrared radiation reflected from the second portion and the amount of infrared radiation transmitted from the second portion, and the temperature of the semiconductor workpiece at the second location is also calculated.

[0030] Infrared light with a wavelength of 2.7 μm emitted from an infrared emitter is modulated by a chopper to become pulsed light, and when the pulsed light with a wavelength of 2.7 μm is irradiated onto a semiconductor workpiece (wafer) 7, the reflected portion is received by the 2.7 μm reflective infrared sensor 2, and the transmitted portion is received by the 2.7 μm transmissive infrared sensor 9. Calculation is performed using the following formula (1).

[0031]

number

[0032] The sum of the emissivity, reflectivity, and transmittance of an object is set to 1, and the real-time reflectivity ρ and transmittance τ of the wafer are determined by a reflective infrared sensor 2 with a wavelength (λ) of 2.7 μm and a transmissive infrared sensor 9 with a wavelength of 2.7 μm, and the emissivity ε of the wafer is calculated. The reflectivity ρ is the ratio between the intensity of reflected light detected by the reflective infrared sensor and the intensity of infrared light emitted by the infrared emitter, and the transmittance τ is the ratio between the intensity of transmitted light detected by the transmissive infrared sensor and the intensity of infrared light emitted by the infrared emitter.

[0033] The reflective infrared sensors 2 and 9 can also receive infrared light thermally radiated from the top and bottom surfaces of the wafer, and this radiated light can be distinguished in frequency from the light radiated from the infrared emitter 6. This follows the blackbody radiation equation (2):

[0034]

number

[0035] Calculate the front and back temperatures of the wafer, where I wafer is the received infrared thermal radiation of the wafer, h is Planck's constant, c is the speed of light, k is Boltzmann's constant, λ is the radiation wavelength, and ε is the emissivity of the wafer.

[0036] As the wafer enters the rapid thermal processing chamber and begins to heat up, the 2.7 μm infrared emitter 6, 2.7 μm reflective infrared sensor 2, and 2.7 μm transmissive infrared sensor 9 continuously measure the wafer's reflectivity, emissivity, and transmittance. The temperature measurement results provide a reference temperature for the wafer in the 250-400°C temperature range, allowing real-time monitoring of the wafer's temperature rise. When the process temperature reaches 400-750°C, the 2.7 μm infrared emitter 6, 2.7 μm reflective infrared sensor 2, and 2.7 μm transmissive infrared sensor 9 accurately calculate the wafer temperature, contributing to closed-loop control of the wafer temperature. When the wafer's process temperature rises above 750°C, the 2.7 μm infrared emitter 6, 2.7 μm reflective infrared sensor 2, and 2.7 μm transmissive infrared sensor continue to measure the wafer's temperature.

[0037] The above method of the present invention can improve the stability of temperature measurement and control in heat treatment equipment under working conditions such as low emissivity (<0.3) of semiconductor workpieces and rapid changes in emissivity of semiconductor workpieces (e.g., a polysilicon layer exists on a wafer and undergoes a phase transition during heating), etc. Also, the temperature measurement range of semiconductor workpieces can be reduced to 250°C.

[0038] Preferably, the temperature that can be accurately measured for the semiconductor workpiece is within the range of 400°C to 750°C.

[0039] In the above method, controlling and adjusting the heating element in the region of the corresponding portion in response to the temperature of the surface of the semiconductor workpiece includes adjusting the power of the heating element in the region of the corresponding portion.

[0040] Referring to FIG. 3, the heat treatment apparatus of the present invention has two sets of heating lamp arrays arranged vertically, i.e., a top lamp module and a bottom lamp module. Each heating lamp array is divided into four sets (shown in light gray to dark gray). The space from the door side of the reaction chamber to the wafer is divided into two symmetrical parts, and the area from the center of the reaction chamber to the center of the wafer is divided into four areas Z1 to Z4.

[0041] As an example, according to the method of the present invention, when the temperatures of the wafer are measured in the regions Z2 and Z3 to obtain T1 and T2, the measured temperatures are compared with a preset temperature, and if the measured temperature is not within the preset temperature range, the temperature of the wafer can be adjusted to the preset temperature by adjusting the power of one or both of the top lamp module and the bottom lamp module.

[0042] In the method of the present invention, by using only one infrared emitter and multiple reflective infrared sensors and multiple transmissive infrared sensors, the number of temperature measurement locations can be increased, the measurable temperature range can be widened, and the temperature measurement accuracy can be improved. According to the measured temperatures of different locations on the semiconductor workpiece, the lamp modules corresponding to those locations can be individually controlled, thereby achieving accurate temperature control and adjustment.

[0043] According to another embodiment of the present invention, one pyrometer may be provided for each of the two regions. Using an appropriate wafer model, an appropriate wafer model is selected for the two measured temperature values ​​to simulate four temperatures corresponding to the four lamp module regions. That is, according to the method of the present invention, temperature values ​​for many regions can be obtained by measuring the temperatures of a small number of regions, thereby enabling more accurate control of the wafer temperature and improving the temperature control accuracy.

[0044] The heat treatment apparatus and temperature control and adjustment method disclosed herein enable accurate real-time detection during a rapid thermal processing process, and also enable timely control and adjustment of the heating element in the area corresponding to the measurement site, thereby maintaining the temperature of the semiconductor workpiece within a predetermined range throughout the process.

[0045] It should be understood that various forms of the above process can be used by rearranging, adding, or deleting steps, for example, but without limitation, the steps described in the present disclosure can be performed in parallel, sequentially, or in a different order, as long as the desired results of the technical solutions disclosed in the present disclosure can be achieved.

[0046] The above specific embodiments do not limit the scope of the present disclosure. Those skilled in the art will appreciate that various modifications, combinations, subcombinations, and substitutions are possible depending on design requirements and other factors. Any modifications, equivalent substitutions, improvements, etc. made within the principles of the present disclosure are all intended to fall within the scope of protection of the present disclosure.

Claims

1. 1. A thermal processing apparatus for semiconductor workpieces, comprising: one or more heating elements for heating the semiconductor workpiece; a first cover plate including three or more first windows; a second cover plate including two or more second windows that are transparent to radiation having a wavelength of 2.7 μm; a workpiece support element positioned between the first cover plate and the second cover plate for supporting the semiconductor workpiece; a temperature measurement assembly including an infrared emitter, at least two reflective infrared sensors in series, and at least two transmissive infrared sensors; wherein the three or more first windows include, in a horizontal direction away from the infrared emitter, a first window at a first position, at least one first window at an intermediate position, and a first window at an end position; a first window in the intermediate position having a reflective / transmissive coating on a surface facing the second cover plate;

2. 2. The thermal processing apparatus for a semiconductor workpiece of claim 1, wherein the reflective / transmissive coating has a reflectivity of 10% to 50% and a transmittance of 50% to 90% for radiation having a wavelength of 2.7 μm.

3. 3. The thermal processing apparatus for semiconductor workpieces of claim 1 or claim 2, wherein the reflective / transmissive coating is a potassium bromide layer.

4. 3. The thermal processing apparatus for semiconductor workpieces of claim 1 or 2, wherein each of the at least two consecutive reflective infrared sensors receives infrared radiation from the infrared emitter that is reflected by the semiconductor workpiece and transmitted through the first window.

5. 3. The thermal processing apparatus for semiconductor workpieces of claim 1 or 2, wherein the at least two transmission type infrared sensors receive radiation from the infrared emitter transmitted through the semiconductor workpiece and the second window.

6. 3. The heat treatment apparatus for semiconductor workpieces of claim 1, further comprising a top plate and a bottom plate, wherein the infrared emitter and the series of at least two reflective infrared sensors are provided on the outside of the top plate, and the at least two transmissive infrared sensors are provided on the outside of the bottom plate.

7. 7. The thermal processing apparatus for semiconductor workpieces of claim 6, wherein the first and second cover plates are each made of high hydroxyl quartz cover plates.

8. The heat treatment apparatus for semiconductor workpieces comprises:

3. The heat treatment apparatus for semiconductor workpieces according to claim 1, wherein the temperature of the semiconductor workpiece is measurable within a range of 400 to 750°C.

9. The heat treatment apparatus for semiconductor workpieces comprises: further comprising a reaction chamber defined by a reaction chamber body, a first cover plate, and a second cover plate; 3. The heat treatment apparatus for semiconductor workpieces of claim 1 or claim 2, wherein the infrared emitter, the reflective infrared sensor, and the transmissive infrared sensor each form an equal angle with the longitudinal axis of the reaction chamber body, and preferably the angle is 30 to 60 degrees.

10. 3. The heat treatment apparatus for semiconductor workpieces according to claim 1, wherein the first cover plate and the second cover plate are each made of high-hydroxyl quartz.

11. 1. A temperature control regulation method for semiconductor workpiece heat treatment, comprising: placing a semiconductor workpiece on a workpiece support element within a reaction chamber of a thermal processing apparatus; providing a first cover plate including three or more first windows, wherein the three or more first windows include, in a horizontal direction away from the infrared emitter, a first window at a first position, at least one first window at an intermediate position, and a first window at an end position; providing a second cover plate including two or more second windows, wherein a reflective / transmissive coating is provided on a surface of the at least one intermediate first window facing the second cover plate; emitting infrared radiation with an infrared emitter; transmitting the infrared radiation through a first window at the first location to illuminate a surface of the semiconductor workpiece; receiving and measuring, by a reflective infrared sensor, a first portion of the amount of infrared radiation reflected by at least two portions of the surface of the semiconductor workpiece, and receiving and measuring, by a transmissive infrared sensor, a second portion of the amount of infrared radiation transmitted by the at least two portions; determining the reflectance and transmittance of the semiconductor workpiece at the same location based on the amount of infrared radiation of a first portion and the amount of infrared radiation of a second portion, respectively, and calculating the emissivity of the semiconductor workpiece based on the reflectance and transmittance; calculating a temperature of the surface of the semiconductor workpiece at the same location based on the emissivity; and controlling and adjusting a heating element in a region of a corresponding portion in response to a temperature of the surface of the semiconductor workpiece.

12. In the temperature control adjustment method, the infrared radiation passes through a first window at the first position and irradiates a first portion of the surface of the semiconductor workpiece; a reflective infrared sensor receives and measures the amount of reflected infrared radiation of a first portion that is reflected by the semiconductor workpiece at the first position and passes through the first window at an intermediate position; and a transmissive infrared sensor receives and determines the amount of transmitted infrared radiation of a first portion that is transmitted by the semiconductor workpiece at the first position and passes through a second window; a part of the infrared radiation reflected by the semiconductor workpiece at the first location and irradiated onto the first window at the intermediate position is reflected onto a second location on the surface of the semiconductor workpiece, and the amount of the reflected infrared radiation of the second portion is reflected by the semiconductor workpiece at the second location and transmitted through the first window at the intermediate or terminal position; and the amount of the transmitted infrared radiation of the second portion is received and determined by a transmission type infrared sensor and transmitted by the semiconductor workpiece at the second location and transmitted through the second window; calculating an emissivity of the semiconductor workpiece at the first location based on the amount of infrared reflected radiation of the first portion and the amount of infrared transmitted radiation of the first portion, and further calculating a temperature of the semiconductor workpiece at the first location; 12. The temperature control adjustment method of claim 11, further comprising: calculating an emissivity of the semiconductor workpiece at the second location based on the amount of infrared reflected radiation of the second portion and the amount of infrared transmitted radiation of the second portion; and further calculating a temperature of the semiconductor workpiece at the second location.

13. 12. The temperature control regulation method of claim 11, wherein the temperature of the semiconductor workpiece is in the range of 400°C to 750°C.

14. 12. The temperature control and adjusting method of claim 11, wherein the step of controlling and adjusting a heating element in a region of the corresponding portion in response to the temperature of the surface of the semiconductor workpiece includes adjusting power of the heating element in the region of the corresponding portion.

Images