Plasma processing equipment

Abstract

To provide a plasma processing apparatus that prevents abnormal discharge.SOLUTION: A plasma processing apparatus has a plasma processing chamber, a substrate support portion installed in the plasma processing chamber and holding a substrate, and a shower head facing the substrate support portion, the shower head has a shower plate in which a gas flow path for discharging a gas is formed, the shower plate has a base material having a recess and an embedding member inserted into and joined to the recess, the gas flow path has a first flow path formed in the base material and connected to the recess, a second flow path formed in the embedding member, and a connecting passage formed in at least one of the base material and the embedding member and connecting the first flow path and the second flow path.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a plasma processing apparatus. [Background technology]

[0002] Patent Document 1 discloses a plasma processing apparatus having an upper electrode formed by stacking a lower member having gas discharge holes, an intermediate member having communication holes, and an upper member having gas passage holes.

[0003] Patent Document 2 discloses a multilayer silicon electrode plate for plasma etching, which is characterized by stacking multiple thin silicon electrode plates each having a through hole and fixing them with bolts to a cooling plate also having a through hole. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent No. 5336968 [Patent Document 2] Patent No. 3873277 Summary of the Invention [Problem to be solved by the invention]

[0005] In one aspect, the present disclosure provides a plasma processing apparatus that prevents abnormal discharge. [Means for solving the problem]

[0006] In order to solve the above problem, according to one aspect, there is provided a plasma processing apparatus including: a plasma processing chamber; a substrate support provided in the plasma processing chamber and configured to hold a substrate; and a shower head facing the substrate support, wherein the shower head has a shower plate having a gas flow path formed therein for discharging a gas, the shower plate having a base having a recess and an embedding member inserted into and joined to the recess, wherein the gas flow path includes a first flow path formed in the base and communicating with the recess, a second flow path formed in the embedding member, and a communication path formed in at least one of the base and the embedding member and communicating between the first flow path and the second flow path. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is an example of a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus. [Figure 2] FIG. 2 is an example of a cross-sectional view of the shower plate according to the first embodiment. [Figure 3] 1A is an example of a top perspective view of a shower plate, FIG. 1B is an example of a bottom view of the shower plate 132, and FIG. 1C is an example of an enlarged plan view of a flow channel. [Figure 4] 1 is an example of an exploded cross-sectional view of a shower plate. [Figure 5] FIG. 3 is a perspective view showing an example of the shape of a flow channel formed in a shower plate. [Figure 6] 10A and 10B are perspective views showing examples of other shapes of flow channels formed in a shower plate. [Figure 7] FIG. 10 is a perspective view showing another example of a flow channel having another shape formed in the shower plate. [Figure 8] FIG. 10 is a perspective view showing another example of a flow channel having another shape formed in the shower plate. [Figure 9] FIG. 10 is an example of a cross-sectional view of a shower plate according to a second embodiment. [Figure 10] FIG. 10 is a perspective view showing an example of the shape of a flow channel formed in a shower plate according to a second embodiment. [Figure 11]FIG. 11 is an example of a cross-sectional view of a shower plate according to a third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] An example of the configuration of a plasma processing system will be described below: Fig. 1 is an example of a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus.

[0010] The plasma processing system includes a capacitively coupled plasma processing device 1 and a controller 2. The capacitively coupled plasma processing device 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing device 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas inlet for supplying at least one process gas to the plasma processing space 10s and at least one gas outlet for exhausting gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically isolated from the plasma processing chamber 10 enclosure.

[0011] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0012] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF (Radio Frequency) power supply 31 and / or a DC (Direct Current) power supply 32 (described later) may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal (described later) is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, the electrostatic electrode 1111b may function as the lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0013] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0014] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0015] The shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a (13a1 to 13a3), at least one gas diffusion chamber 13b (13b1 to 13b3), and multiple gas inlets 13c (13c1 to 13c3: see FIG. 2). The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c.

[0016] 1 includes a gas inlet portion 51, a gas inlet portion 52, and a gas inlet portion 53. The gas inlet portion 51 introduces gas into a central region (center region) of the substrate W in the plasma processing chamber 10. The gas inlet portion 52 introduces gas into a region (intermediate region) outside the gas inlet portion 51. The gas inlet portion 53 introduces gas into a region (edge ​​region) outside the gas inlet portion 52. The gas inlet portion 51, the gas inlet portion 52, and the gas inlet portion 53 are concentrically arranged.

[0017] The gas diffusion chamber 13b includes a gas diffusion chamber 13b1, a gas diffusion chamber 13b2, and a gas diffusion chamber 13b3.

[0018] Gas diffusion chamber 13b1 is connected to gas supply port 13a1 and multiple gas inlets 13c1 so that gas can flow through them. Gas introduction section 51 has gas supply port 13a1, gas diffusion chamber 13b1, and multiple gas inlets 13c1. Gas diffusion chamber 13b2 is connected to gas supply port 13a2 and multiple gas inlets 13c2 so that gas can flow through them. Gas introduction section 52 has gas supply port 13a2, gas diffusion chamber 13b2, and multiple gas inlets 13c2. Gas diffusion chamber 13b3 is connected to gas supply port 13a3 and multiple gas inlets 13c3 so that gas can flow through them. Gas introduction section 53 has gas supply port 13a3, gas diffusion chamber 13b3, and multiple gas inlets 13c3.

[0019] The shower head 13 also includes at least one upper electrode. In addition to the shower head 13, the gas introduction part may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the side wall 10a.

[0020] The shower head 13 also has a cooling plate 131 and a shower plate 132. The cooling plate 131 is made of, for example, aluminum, and holds the shower plate 132. The cooling plate 131 also has a function of cooling the held shower plate 132. The cooling plate 131 also has a gas diffusion chamber 13b formed therein. The shower plate 132 is made of, for example, Si, SiC, or the like, and has a gas inlet 13c formed therein. The cooling plate 131 is an example of a holding plate.

[0021] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0022] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one process gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of a plasma generating unit configured to generate a plasma from one or more process gases in the plasma processing chamber 10. In addition, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0023] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0024] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0025] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first bias DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0026] In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0027] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0028] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. The program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0029] Next, the shower plate 132 in which the gas inlet 13c is formed will be described with reference to FIGS. 2 to 5. FIG. 2 is an example of a cross-sectional view of the shower plate 132 according to the first embodiment. FIG. 3(a) is an example of a top perspective view of the shower plate 132, FIG. 3(b) is an example of a bottom view of the shower plate 132, and FIG. 3(c) is an example of an enlarged plan view of the gas flow path 250. FIG. 4 is an example of an exploded cross-sectional view of the shower plate 132.

[0030] 2 and 4, the shower plate 132 has a base material 210 having recesses 211a, 211b, and 211c, and embedding members 220 and 230 that are inserted into and joined to the recesses 211a to 211c. The recesses 211a to 211c are formed on the upper surface of the base material 210. The recess 211a is formed in a circular shape that is coaxial with the central axis of the base material 210. The recess 211b is formed in an annular shape that is coaxial with the central axis of the base material 210, radially outward from the recess 211a. The recess 211c is formed in an annular shape that is coaxial with the central axis of the base material 210, radially outward from the recess 211b.

[0031] The embedding members 220a and 230a are stacked and embedded in the recess 211a. The embedding members 220a and 230a are disk-shaped members. The embedding members 220a and 230a are inserted into the recess 211a, and a bottom surface 301 of the recess 211a abuts against a lower surface 304 of the embedding members 220a, and an upper surface 303 of the embedding members 220a abuts against a lower surface 307 of the embedding members 230a. The outer peripheries of the embedding members 220a and 230a are welded to the base material 210 by welded portions 240a. That is, a side surface 305 of the embedding member 220a and a side surface 308 of the embedding member 230a are joined to a side surface 302 of the recess 211a of the base material 210 by welding.

[0032] Furthermore, embedding members 220b and 230b are stacked and embedded in recess 211b. Embedding members 220b and 230b are annular members. Embedding members 220b and 230b are inserted into recess 211b, and their inner peripheries are welded to base material 210 by weld portion 240b, and their outer peripheries are welded to base material 210 by weld portion 240c.

[0033] Similarly, embedding members 220c and 230c are stacked and embedded in recess 211c. Embedding members 220c and 230c are annular members. Embedding members 220c and 230c are inserted into recess 211c, with their inner peripheries welded to base material 210 by weld 240d and their outer peripheries welded to base material 210 by weld 240e.

[0034] The base material 210 and the embedded members 220, 230 are made of, for example, Si, SiC, etc. Preferably, the base material 210 and the embedded members 220, 230 are made of the same material. This makes it possible to suppress or eliminate the difference in thermal expansion between the base material 210 and the embedded members 220, 230 when plasma heat is input to the shower plate 132.

[0035] Furthermore, the base material 210 and the embedded members 220 and 230 are joined by welding, which makes it possible to prevent a potential difference from occurring between the base material 210 and the embedded members 220 and 230 when a voltage is applied to the cooling plate 131 from the power source 30.

[0036] A plurality of gas flow paths 250 are formed in the shower plate 132. Each gas flow path 250 includes a flow path 251, a branch flow path 252, a flow path 253, a branch flow path 254, and a flow path 255.

[0037] In the base material 210, a plurality of flow paths 255 are formed, which communicate from the bottom surface 301 of the recess 211a to the lower surface of the base material 210.

[0038] A recessed groove is formed on the lower surface 304 of the embedding member 220a. By inserting the embedding member 220a into the recessed portion 211a of the base material 210, a branched flow path 254 is formed by the recessed groove formed on the lower surface 304 of the embedding member 220a and the bottom surface 301 of the recessed portion 211a. The branched flow path 254 communicates with a flow path 255. Furthermore, a flow path 253 is formed in the embedding member 220a from the upper surface 303 toward the lower surface 304, communicating with the recessed groove that becomes the branched flow path 254. Here, in the gas flow path 250, a plurality of flow paths 253 (three in the example of FIG. 2) communicating with the branched flow paths 254 are provided, and the number of flow paths 253 is the same as the number of branched flow paths 254. Furthermore, a plurality of flow paths 255 (three in the example of FIG. 2) communicate with one branched flow path 254. Furthermore, the flow path 255 is an example of a first flow path formed in the base material and communicating with a recessed portion of the base material. The flow path 253 is an example of a second flow path formed in the embedding member. The branch flow path 254 is an example of a communication path formed in at least one of the base material and the embedding member, and connecting the first flow path and the second flow path.

[0039] A recessed groove is formed in the lower surface 307 of the embedding member 230a. By inserting the embedding member 230a into the recess 211a of the base material 210, a branched flow path 252 is formed by the recessed groove formed in the lower surface 307 of the embedding member 230a and the upper surface 303 of the embedding member 220a. The branched flow path 252 communicates with the flow path 253. Furthermore, a flow path 251 is formed in the embedding member 230a from the upper surface 306 to the lower surface 307, communicating with the recessed groove that becomes the branched flow path 252. Here, in the gas flow path 250, the number of flow paths 251 communicating with the branched flow path 252 is one, and is the same as the number of branched flow paths 252. Furthermore, one branched flow path 252 is communicated with a plurality of flow paths 253 (three for each in the example of FIG. 2).

[0040] This forms a gas flow path 250 that branches from one flow path 251 via branch flow path 252 into three flow paths 253, and further branches from each flow path 253 via branch flow path 254 into three flow paths 255.

[0041] In this way, the embedding members 220a and 230a inserted into the recess 211a form the gas flow path 250. Similarly, the embedding members 220b and 230b inserted into the recess 211b form the gas flow path 250. Furthermore, the embedding members 220c and 230c inserted into the recess 211c form the gas flow path 250.

[0042] As shown in FIGS. 3(a) to 3(c), the shower plate 132 has a center region where the embedding members 230a (embedding members 220a) are arranged, an intermediate region where the embedding members 230b (embedding members 220b) are arranged, and an edge region where the embedding members 230c (embedding members 220c) are arranged. A plurality of gas flow channels 250 are arranged in each of the center region, intermediate region, and edge region. As shown in FIG. 3(a), a plurality of flow channels 251 are arranged on the upper surface of the shower plate 132 (the surface in contact with the cooling plate 131). Furthermore, as shown in FIGS. 3(b) and 3(c), a plurality of flow channels 255 are arranged on the lower surface of the shower plate 132 (the surface on the plasma processing space 10s side).

[0043] Gas inlet 13c1 is formed by a plurality of gas flow paths 250 arranged in a center region of shower plate 132. Gas inlet 13c2 is formed by a plurality of gas flow paths 250 arranged in a middle region of shower plate 132. Gas inlet 13c3 is formed by a plurality of gas flow paths 250 arranged in an edge region of shower plate 132.

[0044] As a result, gas introduction unit 51 introduces the processing gas supplied from gas supply port 13a1 into a central region of substrate W in plasma processing chamber 10 via gas diffusion chamber 13b1 and gas introduction port 13c1 (gas flow path 250). Gas introduction unit 52 introduces the processing gas supplied from gas supply port 13a2 into a region (middle region) outside gas introduction unit 51 in plasma processing chamber 10 via gas diffusion chamber 13b2 and gas introduction port 13c2 (gas flow path 250). Gas introduction unit 53 introduces the processing gas supplied from gas supply port 13a3 into a region (edge ​​region) outside gas introduction unit 52 in plasma processing chamber 10 via gas diffusion chamber 13b3 and gas introduction port 13c3 (gas flow path 250).

[0045] Here, by welding base material 210, embedding member 220, and embedding member 230 together at welds 240a-240e, the process gas supplied to gas inlet 13c1 is prevented from flowing into other gas inlets 13c2 and 13c3. Similarly, the process gas supplied to gas inlet 13c2 is prevented from flowing into other gas inlets 13c1 and 13c3. Furthermore, the process gas supplied to gas inlet 13c3 is prevented from flowing into other gas inlets 13c1 and 13c2.

[0046] Next, one gas flow path 250 will be further described with reference to Fig. 5. Fig. 5 is an example of a perspective view showing the shape of the gas flow path 250 formed in the shower plate 132.

[0047] 5, in a branch flow path 252 that branches from one flow path 251 into three flow paths 253, the distances from the flow path 251 to the flow path 253 are equal. Also, in a branch flow path 254 that branches from one flow path 253 into three flow paths 255, the distances from the flow path 253 to the flow path 255 are equal. As a result, the distances in the process gas flow direction from the inlet of one flow path 251 to the outlets of the nine flow paths 255 are all equal.

[0048] In the capacitively coupled plasma processing apparatus 1, RF source power is supplied to either the shower head 13 (upper electrode) or the substrate support 11 (lower electrode) disposed above or below the plasma processing chamber 10, and plasma is generated by discharge occurring in the plasma processing space 10s. The gas flow path 250 formed in the shower plate 132 has flow paths 251, 253, and 255 extending in the vertical direction, i.e., in the voltage application direction, and branch flow paths 252 and 254 extending in the horizontal direction, i.e., in a direction perpendicular to the voltage application direction.

[0049] The flow path 255 and the flow path 253 are not arranged coaxially, but are formed so as to pass through a flow path (branch flow path 254) extending in a direction perpendicular to the voltage application direction between the flow path 255 and the flow path 253. Similarly, the flow path 253 and the flow path 251 are not arranged coaxially, but are formed so as to pass through a flow path (branch flow path 252) extending in a direction perpendicular to the voltage application direction between the flow path 253 and the flow path 251.

[0050] Here, when the voltage applied to the upper electrode increases, the electric field near the gas inlet 13c (flow path 255) becomes stronger, dissociation of the process gas molecules progresses, and the density of electrons and ions increases. The movement speed of the electrons and ions also increases. Therefore, the process gas discharged from the gas inlet 13c (flow path 255) into the plasma processing space 10s becomes more highly dissociated than when the applied voltage is low, which may cause abnormal discharge near the gas inlet 13c (flow path 255).

[0051] In contrast, in the shower plate 132, the gas flow passages 250 are formed in a tournament shape. This shortens the distance in the voltage application direction of electrons and ions in the plasma drawn into the gas flow passages 250 from the plasma processing space 10s. This shortens the mean free path of the electrons and ions, thereby suppressing the occurrence of abnormal discharge.

[0052] Furthermore, the number of gas holes (flow paths 251) on the upper surface side of the shower plate 132 can be made smaller than the number of gas holes (flow paths 255) on the lower surface side of the shower plate 132. This increases the heat transfer area between the shower plate 132 and the cooling plate 131.

[0053] Furthermore, by increasing the number of flow paths 255 downstream of the flow paths 251 upstream, it is possible to reduce the gas pressure in the flow paths 255 on the lower surface side of the shower plate 132. This makes it possible to further suppress the occurrence of abnormal discharge.

[0054] Moreover, the shower plate 132 can prevent a potential difference from occurring among the base material 210, the embedding members 220, and the embedding members 230. That is, it is possible to prevent abnormal discharge from occurring due to a potential difference between the base material 210 and the embedding members 220. It is also possible to prevent abnormal discharge from occurring due to a potential difference between the embedding members 220 and 230.

[0055] The shape of the gas flow passages 250 formed in the shower plate 132 is not limited to the shape shown in FIG.

[0056] Fig. 6 is an example of a perspective view showing another shape of the gas flow path 250 formed in the shower plate 132. As shown in Fig. 6, the branch flow paths 252 branching from the flow path 251 to three flow paths 253 may be formed in a disk shape. Also, as shown in Fig. 6, the branch flow paths 254 branching from the flow path 253 to three flow paths 255 may be formed in a disk shape.

[0057] Fig. 7 is an example of a perspective view showing yet another shape of gas flow paths 250 formed in shower plate 132. As shown in Fig. 7, branch flow paths 252 branching from flow path 251 to four flow paths 253 may be formed in a cross shape. Also, as shown in Fig. 7, branch flow paths 254 branching from flow path 253 to four flow paths 255 may be formed in a cross shape.

[0058] Fig. 8 is an example of a perspective view showing yet another shape of the gas flow passage 250 formed in the shower plate 132. As shown in Fig. 8, the branch flow passages 252 branching from a flow passage 251 to four flow passages 253 may be formed in a disk shape. Also, as shown in Fig. 8, the branch flow passages 254 branching from a flow passage 253 to four flow passages 255 may be formed in a disk shape.

[0059] Furthermore, the number of branches in the branch flow paths 252 and 254 has been described as 3 and 4, respectively, but the number is not limited to this and may be 2, or 5 or more.

[0060] Alternatively, the branch flow paths 252 and 254 may not be branched but may instead be formed in a horizontal direction. This shortens the mean free path of electrons and ions in the voltage application direction (vertical direction), thereby suppressing the occurrence of abnormal discharge.

[0061] In addition, although the above description has been given assuming that a groove is formed in the lower surface 307 of the embedding member 230a, and that the branch flow path 252 is formed by the groove formed in the lower surface 307 of the embedding member 230a and the upper surface 303 of the embedding member 220a, the present invention is not limited to this. A configuration may also be adopted in which a groove is formed in the upper surface 303 of the embedding member 220a, and that the branch flow path 252 is formed by the groove formed in the lower surface 307 of the embedding member 230a and the upper surface 303 of the embedding member 220a. Further, a configuration may also be adopted in which grooves are formed in the lower surface 307 of the embedding member 230a and the upper surface 303 of the embedding member 220a, and that the branch flow path 252 is formed by the groove formed in the lower surface 307 of the embedding member 230a and the groove formed in the upper surface 303 of the embedding member 220a.

[0062] Similarly, although the above description has been given assuming that a groove is formed in the lower surface 304 of the embedding member 220a, and that the branch flow path 254 is formed by the groove formed in the lower surface 304 of the embedding member 220a and the bottom surface 301 of the recess 211a, the present invention is not limited to this. A configuration may also be adopted in which a groove is formed in the bottom surface 301 of the recess 211a, and that the branch flow path 254 is formed by the groove formed in the lower surface 304 of the embedding member 220a and the bottom surface 301 of the recess 211a. Alternatively, a configuration may also be adopted in which grooves are formed in the lower surface 304 of the embedding member 220a and the bottom surface 301 of the recess 211a, and that the branch flow path 254 is formed by the groove formed in the lower surface 304 of the embedding member 220a and the bottom surface 301 of the recess 211a.

[0063] Although the base material 210 and the embedding members 220, 230 have been described as being joined by welding, this is not a limitation. The base material 210 and the embedding members 220, 230 may be joined by adhesion using a conductive adhesive. Even in this case, it is possible to prevent a potential difference from occurring between the base material 210 and the embedding members 220, 230 when a voltage is applied to the cooling plate 131 from the power source 30. In other words, it is possible to prevent abnormal discharge from occurring due to a potential difference between the base material 210 and the embedding members 220. It is also possible to prevent abnormal discharge from occurring due to a potential difference between the embedding members 220 and 230.

[0064] Furthermore, the shower head 13 has been described as having three gas supply ports 13a (13a1 to 13a3) and being divided into three gas introduction sections 51 to 53, but this is not limited thereto. The shower head 13 may have one section, two sections, or four or more sections.

[0065] Fig. 9 is an example of a cross-sectional view of the shower plate 132 according to the second embodiment. Fig. 10 is an example of a perspective view showing the shape of the gas flow paths 250 formed in the shower plate 132 according to the second embodiment.

[0066] 9, the embedding member 230 inserted into the recess of the base material 210 may be a single layer. A plurality of gas flow paths 250 are formed in the shower plate 132. As shown in FIGS. 9 and 10, the gas flow path 250 has a flow path 251, a branch flow path 252, and a plurality of flow paths 255.

[0067] In the base material 210, a plurality of flow paths 255 are formed, which communicate from the bottom surface of the recess into which the embedding member 230a is inserted to the lower surface of the base material 210.

[0068] A recessed groove is formed on the lower surface of the embedding member 230a. By inserting the embedding member 230a into the recessed portion of the base material 210, a branched flow path 252 is formed by the recessed groove formed on the lower surface of the embedding member 230a and the bottom surface of the recessed portion. The branched flow path 252 communicates with a flow path 255. Furthermore, a flow path 251 is formed in the embedding member 230a from the upper surface to the lower surface, and communicates with the recessed groove that becomes the branched flow path 252. Here, in the gas flow path 250, the number of flow paths 251 that communicate with the branched flow path 252 is one, and is the same as the number of branched flow paths 252. Furthermore, one branched flow path 252 is communicated with multiple flow paths 255.

[0069] As a result, a gas flow path 250 is formed, which branches from one flow path 251 to a plurality of flow paths 255 via branch flow paths 252 .

[0070] In this way, gas flow path 250 is formed by embedding member 230a inserted into the recess of substrate 210. Similarly, gas flow path 250 is formed by embedding member 230b inserted into the recess of substrate 210. Furthermore, gas flow path 250 is formed by embedding member 230c inserted into the recess of substrate 210.

[0071] Although the examples have been described in which the embedding member inserted into the recess of the base material 210 is one layer (see FIG. 9) and two layers (see FIG. 2), this is not limited to this and three or more layers may be used.

[0072] FIG. 11 is an example of a cross-sectional view of a shower plate 132 according to the third embodiment.

[0073] 11 may have recesses formed on the lower surface side of a base material 210, and embedding members 220 and 230 disposed in the recesses and joined by welding or adhesive. A plurality of gas flow paths 250 are formed in the shower plate 132. The gas flow path 250 includes a flow path 251, a branch flow path 252, a flow path 253, a branch flow path 254, and a flow path 255.

[0074] In the base material 210, a flow path 251 is formed that communicates from the top surface of the recess toward the upper surface of the base material 210.

[0075] A groove is formed on the upper surface of the embedding member 220a. By inserting the embedding member 220a into the recess of the base material 210, a branch flow path 252 is formed by the groove formed on the upper surface of the embedding member 220a and the ceiling surface of the recess. The branch flow path 252 communicates with the flow path 251. In addition, a flow path 253 is formed in the embedding member 220a from the upper surface to the lower surface, which communicates with the groove that becomes the branch flow path 252.

[0076] A recessed groove is formed on the upper surface of the embedding member 230a. By inserting the embedding member 230a into the recessed portion of the base material 210, a branched flow path 254 is formed by the recessed groove formed on the upper surface of the embedding member 230a and the lower surface of the embedding member 220a. The branched flow path 254 communicates with the flow path 253. Furthermore, a flow path 255 is formed in the embedding member 230a from the upper surface to the lower surface, which communicates with the recessed groove that becomes the branched flow path 254.

[0077] This forms a gas flow path 250 that branches from one flow path 251 via branch flow path 252 into three flow paths 253, and further branches from each flow path 253 via branch flow path 254 into three flow paths 255.

[0078] In this way, gas flow path 250 is formed by embedding members 220a and 230a inserted into the recesses of substrate 210. Similarly, gas flow path 250 is formed by embedding members 220b and 230b inserted into the recesses of substrate 210. Gas flow path 250 is also formed by embedding members 220c and 230c inserted into the recesses of substrate 210.

[0079] The above describes embodiments of the plasma processing system, but the present disclosure is not limited to the above embodiments, and various modifications and improvements are possible within the scope of the gist of the present disclosure as described in the claims. [Explanation of symbols]

[0080] W substrate 1. Plasma processing equipment 2. Control section 10 Plasma Processing Chamber 10s Plasma treatment space 11 Substrate support 13. Shower head 13a Gas supply port 13b Gas diffusion chamber 13c Gas inlet 20 Gas supply unit 30 power supply 40 Exhaust System 51~53 Gas inlet 131 Cooling plate (holding plate) 132 shower plate 210 Base material 211a~211c Recess 220,230 Embedded materials 250 Gas flow path 251 Channel 252 Branch Channel 253 Channel (Second Channel) 254 Branch flow path (communicating path) 255 Channel (1st Channel)

Claims

1. a plasma processing chamber; a substrate support disposed within the plasma processing chamber and configured to hold a substrate; a shower head facing the substrate support, The shower head is a shower plate having a gas flow path formed therein for discharging gas for each of the plurality of regions; The shower plate is a substrate having a plurality of recesses formed in each of the plurality of regions; a plurality of embedding members that are inserted into and joined to the plurality of recesses, respectively; Each of the gas flow paths is a first flow path formed in the base material and communicating with the recess; a second flow path formed in the embedded member; a communication passage formed in at least one of the base material and the embedded member, the communication passage connecting the first flow passage and the second flow passage; Plasma processing equipment.

2. The first flow path and the second flow path are arranged non-coaxially. The plasma processing apparatus according to claim 1 .

3. The base material and the embedding member are joined by welding or bonding with a conductive adhesive.

3. The plasma processing apparatus according to claim 1 or 2.

4. The substrate and the embedded member are formed of Si or SiC.

4. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is a plasma processing apparatus.

5. The base material and the embedded member are formed of the same material. The plasma processing apparatus according to claim 4 .

6. a plurality of the embedding members are laminated and bonded to the recesses of the base material; The gas flow path is formed between the stacked embedded members.

6. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is a plasma processing apparatus.

7. The shower head is a holding plate that holds the shower plate, A voltage is applied to the holding plate from a power source.

7. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is a plasma processing apparatus.

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