Composite device and method for producing coated fine particles

Abstract

[Problem] To provide a composite device capable of preventing fine particles or electronic components from being exposed to the atmosphere during treatment when both plasma CVD treatment and sputtering treatment are performed. [Solution] The present invention provides a composite device comprising: an exhaust mechanism 13 that vacuum exhausts the inside of a chamber 12; a container 15 that accommodates fine particles 14 and has an internal shape of a polygonal, circular or elliptical cross section; an operation mechanism 16 that rotates or oscillates the container about a rotation axis perpendicular to the cross section; a first electrode 19 that holds a first sputtering target 18a; a moving mechanism that rotates the first electrode to move the position of the first sputtering target; a gas introduction part that introduces at least one gas of an inert gas, an oxygen gas, a fluorine gas, and a raw material gas into the container; a first supply mechanism that supplies power or a ground potential to the first electrode; and a second supply mechanism that supplies a ground potential or power to the container.

Description

[Technical Field]

[0001] The present invention relates to a composite device and a method for producing coated fine particles. [Background technology]

[0002] Patent Document 1 discloses a polygonal barrel sputtering device that coats the surfaces of fine particles with a sputtered film by sputtering, and Patent Document 2 discloses a plasma CVD device that coats the surfaces of fine particles with a CVD film by a plasma CVD method.

[0003] For example, if a metal film such as Cu is formed on the surface of plastic microparticles, and then an oxide film such as SiO2 is formed on the metal film, the metal film must first be formed on the surface of the microparticles by sputtering using the polygonal barrel sputtering device described above. The microparticles with the metal film formed thereon are then removed from the polygonal barrel sputtering device and introduced into a plasma CVD device, where an oxide film is formed on the metal film by plasma CVD. When the microparticles with the metal film formed thereon are removed from the polygonal barrel sputtering device, the metal film is exposed to the atmosphere and oxidized. As a result, even if an oxide film is formed on the metal film by plasma CVD, the quality of the metal film is degraded, which can result in poor performance of the final oxide film and the microparticles with the metal film formed thereon. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2004-250771 [Patent Document 2] Japanese Patent Application Laid-Open No. 2006-16661 Summary of the Invention [Problem to be solved by the invention]

[0005] One aspect of the present invention aims to provide a composite apparatus or coated particles using the same that prevents particles or electronic components from being exposed to the atmosphere during processing when both sputtering processing and plasma CVD processing are performed on the particles or electronic components. Another aspect of the present invention is to provide a composite device that prevents particles or electronic components from being exposed to the atmosphere during processing when performing both surface modification processing and sputtering processing on the particles or electronic components. [Means for solving the problem]

[0006] Various aspects of the present invention are described below. [1] A chamber; an exhaust mechanism that evacuates the chamber; a container disposed in the chamber and containing fine particles or electronic components, the container having a cross-sectional internal shape of a polygon, a circle, or an ellipse; an operating mechanism that rotates or swings the container around a rotation axis that is perpendicular to the cross section; a first electrode disposed within the vessel and holding a first sputtering target; a gas inlet for introducing at least one gas selected from an inert gas, oxygen gas, nitrogen gas, fluorine gas, and a raw material gas into the container; a first supply mechanism that supplies power or a ground potential to the first electrode; a second supply mechanism for supplying a ground potential or power to the container; A composite device comprising:

[0007] [2] In [1] above, the first supply mechanism is the plasma power supply or a ground electrically connected to the first electrode via a first switch; The composite apparatus is characterized in that the second supply mechanism is a ground or a plasma power source electrically connected to the container via a second switch.

[0008] [3] In [1] or [2] above, A composite apparatus characterized by having a movement mechanism that rotates the first electrode to move the position of the first sputtering target held by the first electrode so as to position the first sputtering target upward or downward.

[0009] [4] In [1] or [2] above, A control unit is provided. The control unit performs sputtering while stirring or rotating the particles or the electronic components in the container by using the operating mechanism to rotate or swing the container, and then adheres or forms a thin film of ultrafine particles having a diameter smaller than that of the particles or the electronic components to the particles or the electronic components, and then: A composite apparatus characterized by performing a plasma CVD method while stirring or rotating the fine particles or electronic components in the container by rotating or pendulum-moving the container using the operating mechanism, thereby controlling so that ultrafine particles having a diameter smaller than that of the fine particles or electronic components adhere to the fine particles or electronic components or form a thin film on the fine particles or electronic components.

[0010] [5] In [1] or [2] above, A control unit is provided. The control unit performs a plasma CVD method while stirring or rotating the fine particles or the electronic components in the container by rotating or pendulum-moving the container using the operating mechanism, and then adheres or forms a thin film of ultrafine particles having a diameter smaller than that of the fine particles or the electronic components to the fine particles or the electronic components, and then: A composite device characterized by using the operating mechanism to rotate or swing the container, thereby performing sputtering while stirring or rotating the fine particles or electronic components in the container, thereby controlling the deposition of ultrafine particles smaller in diameter than the fine particles or electronic components onto the fine particles or electronic components, or the formation of a thin film on the fine particles or electronic components.

[0011] [6] In paragraph [3] above, A control unit is provided. The control unit controls the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is positioned downward, and the container is rotated or swung by the operating mechanism to perform sputtering while stirring or rotating the particles or electronic components in the container, thereby controlling the deposition of ultrafine particles having a diameter smaller than that of the particles or electronic components or the formation of a thin film on the particles or electronic components.

[0012] [7] In paragraph [3] above, A control unit is provided. The control unit controls the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is positioned above, and performs a plasma CVD method while stirring or rotating the microparticles or electronic components in the container by rotating or pendulum-moving the container using the operating mechanism, thereby controlling the deposition of ultrafine particles having a diameter smaller than that of the microparticles or electronic components or the formation of a thin film on the microparticles or electronic components.

[0013] [8] In paragraph [3] above, A control unit is provided. The control unit controls the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is positioned upward, and performs sputtering between the first sputtering target and the container, thereby correcting the first sputtering target.

[0014] [9] In paragraph [3] above, A control unit is provided. The control unit controls the first electrode using the moving mechanism so that the first sputtering target held by the first electrode is positioned upward, introduces at least one gas selected from an inert gas, oxygen gas, nitrogen gas, and fluorine gas into the container, and generates plasma of the at least one gas while stirring or rotating the particles or electronic components in the container by rotating or pendulum-moving the container using the operating mechanism, thereby modifying the surfaces of the particles or electronic components.

[0015]

[10] In paragraph [3] above, A control unit is provided. The control unit moves the first electrode by the movement mechanism so that the first sputtering target held by the first electrode is positioned below, and performs sputtering while stirring or rotating the fine particles or the electronic components in the container by rotating or pendulum-moving the container using the operation mechanism, thereby adhering ultrafine particles having a diameter smaller than that of the fine particles or the electronic components to the fine particles or the electronic components or forming a thin film thereon, A composite apparatus characterized by the fact that the first electrode is moved by the moving mechanism so that the first sputtering target held by the first electrode is positioned above, and the container is rotated or subjected to a pendulum motion using the operating mechanism to agitate or rotate the fine particles or electronic components in the container while performing a plasma CVD method, thereby controlling the deposition of ultrafine particles having a diameter smaller than that of the fine particles or electronic components onto the fine particles or electronic components or the formation of a thin film thereon.

[0016]

[11] In paragraph [3] above, A control unit is provided. The control unit moves the first electrode by the movement mechanism so that the first sputtering target held by the first electrode is positioned above, and performs a plasma CVD method while stirring or rotating the fine particles or the electronic components in the container by rotating or pendulum-moving the container using the operation mechanism, thereby adhering ultrafine particles having a diameter smaller than that of the fine particles or the electronic components to the fine particles or the electronic components or forming a thin film thereon, A composite apparatus characterized by the fact that the first electrode is moved by the moving mechanism so that the first sputtering target held by the first electrode is positioned below, and the container is rotated or subjected to a pendulum motion using the operating mechanism to perform sputtering while stirring or rotating the fine particles or electronic components in the container, thereby controlling the deposition of ultrafine particles having a diameter smaller than that of the fine particles or electronic components onto the fine particles or electronic components or the formation of a thin film thereon.

[0017]

[12] In paragraph [3] above, A control unit is provided. the control unit moves the first electrode by the movement mechanism so that the first sputtering target held by the first electrode is positioned above, introduces at least one gas selected from an inert gas, oxygen gas, nitrogen gas, and fluorine gas into the container, and generates plasma of the at least one gas while stirring or rotating the particles or the electronic components in the container by rotating or pendulum-moving the container using the operation mechanism, thereby modifying the surfaces of the particles or the electronic components, and then: A composite apparatus characterized by the fact that the first electrode is moved by the moving mechanism so that the first sputtering target held by the first electrode is positioned below, and the container is rotated or subjected to a pendulum motion using the operating mechanism to perform sputtering while stirring or rotating the fine particles or electronic components in the container, thereby controlling the deposition of ultrafine particles having a diameter smaller than that of the fine particles or electronic components onto the fine particles or electronic components or the formation of a thin film thereon.

[0018]

[13] A chamber; an exhaust mechanism that evacuates the chamber; a container disposed in the chamber and containing fine particles or electronic components, the container having a cross-sectional internal shape of a polygon, a circle, or an ellipse; an operating mechanism that rotates or swings the container around a rotation axis that is perpendicular to the cross section; a first electrode disposed within the vessel and holding a first sputtering target; a second electrode disposed within the vessel and holding a second sputtering target; a moving mechanism that rotates the first and second electrodes to move the positions of the first sputtering target held by the first electrode and the second sputtering target held by the second electrode so as to position the first sputtering target held by the first electrode and the second sputtering target held by the second electrode upward or downward, respectively; a gas inlet for introducing at least one gas selected from an inert gas, oxygen gas, nitrogen gas, fluorine gas, and a raw material gas into the container; a first supply mechanism that supplies power or a ground potential to the first electrode; a second supply mechanism that supplies power or a ground potential to the second electrode; a third supply mechanism for supplying a ground potential or power to the container; A composite device comprising:

[0019] [13-1] In

[13] above, a third electrode disposed within the vessel and holding a third sputtering target; a third supply mechanism that supplies power or a ground potential to the third electrode; and The composite apparatus is characterized in that the movement mechanism rotates the third electrode to move the position of the third sputtering target.

[0020] [13-2] In the above [13-1], a fourth electrode disposed within the vessel and holding a fourth sputtering target; a fourth supply mechanism that supplies power or a ground potential to the fourth electrode; and The composite apparatus is characterized in that the movement mechanism rotates the fourth electrode to move the position of the fourth sputtering target.

[0021]

[14] In paragraph

[13] above, the first supply mechanism is the plasma power supply or a ground electrically connected to the first electrode via a first switch and a third switch; the second supply mechanism is the plasma power supply or a ground electrically connected to the second electrode via a first switch and a third switch; The composite apparatus is characterized in that the third supply mechanism is a ground or a plasma power source electrically connected to the container via a second switch.

[0022]

[15] In paragraphs

[13] or

[14] above, A control unit is provided. The control unit moves the first electrode by the movement mechanism so that the first sputtering target held by the first electrode is positioned below, and performs sputtering while stirring or rotating the particles or the electronic components in the container by rotating or pendulum-moving the container using the operation mechanism, thereby adhering first ultrafine particles having a diameter smaller than that of the particles or the electronic components to the particles or the electronic components or forming a first thin film thereon, A composite apparatus characterized by controlling the deposition of second ultrafine particles having a diameter smaller than that of the fine particles or electronic components onto the first ultrafine particles or the first thin film, or the formation of a second thin film, by moving the second electrode by the moving mechanism so that the second sputtering target held by the second electrode is positioned below, and by rotating or pendulum-moving the container using the operating mechanism, the fine particles or electronic components in the container are stirred or rotated while sputtering.

[0023]

[16] In paragraph

[15] above: the control unit controls the introduction of at least one gas selected from an inert gas, oxygen gas, nitrogen gas, and fluorine gas into the container after the first ultrafine particles are attached or the first thin film is formed, and before the second ultrafine particles are attached or the second thin film is formed, and generates plasma of the at least one gas while stirring or rotating the particles or the electronic components in the container by rotating or pendulum-moving the container using the operating mechanism, thereby modifying the surface of the first ultrafine particles or the first thin film.

[0024]

[17] A method for producing coated microparticles using the composite apparatus described in

[11] above, Placing plastic microparticles in the container, moving the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is positioned above; The container is rotated or subjected to a pendulum motion using the operating mechanism, and the plastic fine particles in the container are stirred or rotated while the plasma CVD method is performed, whereby a DLC film or a Si film is formed on the plastic fine particles. a C b N c H d A film is formed, moving the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is positioned below; The container is rotated or subjected to a pendulum motion using the operating mechanism, whereby sputtering is performed while stirring or rotating the plastic fine particles in the container, thereby forming a DLC film or a Si a C b N c H d A metal film is formed on the film, A method for producing coated fine particles, wherein the a, b, c, and d satisfy the following formulas 1 to 4. (Formula 1) 0.2≦a≦0.6 (Formula 2)0.1≦b≦0.3 (Formula 3) 0.1≦c≦0.3 (Formula 4)0.03≦d≦0.2

[0025]

[18] A method for producing coated microparticles using the composite apparatus described in

[11] above, Placing plastic microparticles in the container, moving the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is positioned above; The container is rotated or subjected to a pendulum motion using the operating mechanism, thereby performing a plasma CVD method while stirring or rotating the plastic microparticles in the container, thereby forming a DLC film on the plastic microparticles; The container is rotated or subjected to a pendulum motion using the operating mechanism, and the plasma CVD method is performed while stirring or rotating the plastic fine particles in the container, thereby forming Si on the DLC film. a C b N c H d A film is formed, moving the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is positioned below; The container is rotated or subjected to a pendulum motion using the operating mechanism, whereby the plastic fine particles in the container are stirred or rotated while sputtering, thereby forming a Si a C b N c H dA metal film is formed on the film, A method for producing coated fine particles, wherein the a, b, c, and d satisfy the following formulas 1 to 4. (Formula 1) 0.2≦a≦0.6 (Formula 2)0.1≦b≦0.3 (Formula 3) 0.1≦c≦0.3 (Formula 4)0.03≦d≦0.2 [Effects of the Invention]

[0026] According to one aspect of the present invention, it is possible to provide a composite device or coated particles using the same that prevents the particles or electronic components from being exposed to the atmosphere during the process of attaching ultrafine particles having a smaller diameter than the particles or electronic components to the particles or forming a thin film on the particles or electronic components by both plasma CVD and sputtering.

[0027] Furthermore, according to another aspect of the present invention, a composite device can be provided that prevents the particles or electronic components from being exposed to the atmosphere after surface modification treatment when performing a surface modification treatment on the particles or electronic components and then attaching or forming a thin film on the particles or electronic components by sputtering ultrafine particles having a smaller diameter than the particles or electronic components. [Brief explanation of the drawings]

[0028] [Figure 1] 1 is a cross-sectional view schematically illustrating a composite device according to one embodiment of the present invention. [Figure 2] FIG. 2 is a cross-sectional view taken along line 10-10 shown in FIG. [Figure 3] 1 is a cross-sectional view schematically illustrating a composite device according to one embodiment of the present invention. [Figure 4] FIG. 4 is a cross-sectional view taken along line 20-20 shown in FIG. [Figure 5] 1 is a coated microparticle according to one embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0029] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes in form and details can be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0030] <Composite device> Fig. 1 is a cross-sectional view schematically showing a composite device according to one embodiment of the present invention, and Fig. 2 is a cross-sectional view taken along line 10-10 shown in Fig. 1.

[0031] The composite apparatus 11 shown in FIGS. 1 and 2 is an apparatus that combines the functions of a sputtering apparatus, a plasma CVD apparatus, and a surface modification treatment apparatus.

[0032] This composite device 11 has a chamber 12 and an exhaust mechanism 13 that evacuates the inside of this chamber 12. This exhaust mechanism 13 is composed of a vacuum pump or the like. Also, a container 15 that contains fine particles 14 or electronic components is placed inside the chamber 12. As shown in FIG. 2, this container 15 has a polygonal internal cross-section. This container 15 can be caused to swing in a pendulum motion as shown by arrow 17 by an operating mechanism 16 such as a motor, with an axis perpendicular to the cross-section shown in FIG. 2. In this embodiment, the internal cross-sectional shape of the container is polygonal, but the internal cross-sectional shape of the container may be circular or elliptical. Also, the container may be cylindrical or conical. Furthermore, in this embodiment, the container 15 is caused to perform a pendulum motion by the operating mechanism 16, but the container 15 may also be rotated by the operating mechanism 16.

[0033] A first electrode 19a holding a first sputtering target 18a and a second electrode 19b holding a second sputtering target 18b are disposed within the vessel 15. Note that the state shown in Figures 1 and 2 is a state in which the first sputtering target 18a is positioned below and the second sputtering target 18b is positioned above. In this embodiment, each of the two sputtering targets is held by two electrodes, but three or more sputtering targets may be held by three or more electrodes.

[0034] Furthermore, in this specification, "positioning the sputtering target downward" does not only mean the direction of gravity (directly below) 30 shown in Figures 1 and 2, but also includes positions tilted at less than 45 degrees to the left or right from directly below, and "positioning the sputtering target upward" does not only mean the direction opposite to the direction of gravity 30 (directly above) shown in Figure 1, but also includes positions tilted at 45 degrees or less to the left or right from directly above.

[0035] The composite device 11 also has a movement mechanism 21 that rotates the first and second electrodes 19a and 19b to move the positions of the first and second sputtering targets 18a and 18b. The movement mechanism 21 is composed of a motor and the like. The movement mechanism 21 can position the first and second sputtering targets 18a and 18b held by the first and second electrodes 19a and 19b upward or downward.

[0036] Gas inlet 23 for introducing gas 22 into container 15 is located above first and second electrodes 19a, 19b and has a gas inlet located inside container 15. The gas introduced into container 15 may be at least one of an inert gas, oxygen gas, nitrogen gas, fluorine gas, and a raw material gas.

[0037] The composite apparatus 11 also has a first supply mechanism that supplies power or a ground potential to the first electrode 19a, and the first supply mechanism is a plasma power supply 26 or a ground electrically connected to the first electrode 19a via first and third switches 25 and 28. The composite apparatus 11 also has a second supply mechanism that supplies power or a ground potential to the second electrode 19b, and the second supply mechanism is a plasma power supply 26 or a ground electrically connected to the second electrode 19b via the first and third switches 25 and 28. The composite apparatus 11 also has a second supply mechanism that supplies a ground potential or power to the vessel 15, and the second supply mechanism is a ground or plasma power supply 26 electrically connected to the vessel 15 via a second switch 27. The plasma power supply 26 may be a high-frequency power supply that supplies high-frequency power (RF output), a microwave power supply, a DC discharge power supply, or a pulse-modulated high-frequency power supply, microwave power supply, or DC discharge power supply.

[0038] In the composite device shown in FIG. 1, the plasma power source provided by the first supply mechanism and the plasma power source provided by the second supply mechanism are combined into one plasma power source 26, but a plasma power source may be provided for each of the first and second supply mechanisms.

[0039] <Sputtering treatment> A method for performing sputtering treatment on particles 14 or electronic components using the composite device 11 shown in FIGS. 1 and 2 will be described.

[0040] The composite apparatus 11 shown in FIG. 1 has a control unit 31, which controls the composite apparatus 11 so as to perform the following sputtering process.

[0041] The first electrode 19a is moved by the moving mechanism 21 so that the first sputtering target 18a held by the first electrode 19a is positioned downward, and the container 15 is rotated or swung by the operating mechanism 16, thereby performing sputtering while stirring or rotating the particles 14 or electronic components in the container 15, and thereby attaching ultrafine particles having a diameter smaller than the particles 14 or electronic components to the particles 14 or electronic components or forming a thin film on the particles 14 or electronic components.

[0042] This is explained in detail below. A first sputtering target 18a is held on a first electrode 19a. Various materials can be used for the first sputtering target 18a, such as metals like Zn and Au. Furthermore, fine particles 14 or electronic components are placed in a container 15. Various materials can be used for the fine particles, such as plastics (e.g., polyethylene, polystyrene, PMMA (acrylic)). Next, the first electrode 19a is moved by a moving mechanism 21 so that the first sputtering target 18a is positioned below. Next, argon gas or nitrogen gas is introduced into the container 15 from the gas inlet of the gas inlet 23, as shown by the arrow. Next, the chamber 12 is depressurized using an exhaust mechanism 13. At this time, the pressure inside the chamber 12 is, for example, about 1 Pa. Then, the container 15 is rotated or swung by an operating mechanism 16, thereby stirring or rotating the fine particles 14 or electronic components inside the container 15. Thereafter, a high-frequency voltage is applied to the first electrode 19a by the plasma power supply 26 via the first switch 25 and the third switch 28, and a ground potential is supplied to the container 15 via the second switch 27. This applies a high-frequency voltage between the first sputtering target 18a and the container 15. By performing a sputtering process on the particles 14 or electronic components in the container 15 in this manner, ultrafine particles having a smaller diameter than the particles 14 or electronic components can be attached to the particles 14 or electronic components, or a thin film can be formed on the particles 14 or electronic components. In other words, because the particles 14 or electronic components are rolled by the pendulum motion of the container 15, it is easy to uniformly coat the entire surface of the particles 14 or electronic components with a sputtered film.

[0043] <Plasma CVD processing> A method of performing plasma CVD treatment on particles 14 or electronic components using the composite apparatus 11 shown in Figures 3 and 4 will be described. The composite apparatus 11 shown in Figures 3 and 4 differs from the composite apparatus 11 shown in Figures 1 and 2 in that the first sputtering target 18a is positioned above, but is otherwise similar.

[0044] The composite apparatus 11 shown in FIG. 3 has a control unit 31, which controls the composite apparatus 11 so as to perform the following plasma CVD process.

[0045] The first electrode 19a is moved by a moving mechanism so that the first sputtering target 18a is positioned above, and the container 15 is rotated or swung by an operating mechanism 16 to agitate or rotate the microparticles 14 or electronic components in the container 15 while performing the plasma CVD method, thereby adhering or forming a thin film of ultrafine particles having a diameter smaller than the microparticles or electronic components onto the microparticles 14 or electronic components.

[0046] This is explained in detail below. A plurality of particles 14 or electronic components are placed in a container 15. The first electrode 19a is moved by a moving mechanism 21 so that the first sputtering target 18a is positioned above (see FIGS. 3 and 4). Next, a source gas is introduced into the container 15 from the gas inlet of the gas inlet unit 23 as shown by the arrow. Examples of the source gas include C2H2, CH4, C7H8, CF4, and HMDS-N (hexamethyldisilazane; C6H 19Examples of suitable materials include NSi2 (NSi2) and HMDS (hexamethyldisilazane). Next, the pressure inside the chamber 12 is reduced using the exhaust mechanism 13. Then, the container 15 is rotated or swung using the operating mechanism 16 to agitate or rotate the particles 14 or electronic components inside the container 15. As a result, the source gas is sprayed onto the particles 14 rolling around inside the container 15, and a pressure (e.g., approximately 20 Pa) suitable for film formation by plasma CVD is maintained by balancing the controlled gas flow rate and exhaust capacity. This pressure is higher than the pressure during sputtering. Then, a high-frequency voltage is applied to the container 15 via the second switch 27 by the plasma power supply 26, and a ground potential is supplied to the first electrode 19a via the first switch 25 and the third switch 28. This ignites a plasma between the first electrode 19a and the container 15. This generates plasma inside the container 15, causing ultrafine particles to adhere to the particles 14 or electronic components, or forming a thin film. That is, the particles 14 or electronic components are rolled by causing the container 15 to swing, so that the entire surface of the particles 14 or electronic components can be easily coated uniformly with a CVD film (for example, an SiO2 film). In the above-described plasma CVD process, a ground potential is supplied to the first electrode 19a via the first switch 25 and the third switch 28 to ignite plasma between the first electrode 19a and the vessel 15. Alternatively, a ground potential may be supplied to the second electrode 19b via the first switch 25 and the third switch 28 to ignite plasma between the second electrode 19b and the vessel 15. In this case, the second electrode 19 may not hold the second sputtering target 18b. Alternatively, the first electrode 19a and the second electrode 19b may be integrated into one electrode, the first sputtering target 18a may be held on the integrated electrode, and the first sputtering target 18a may be positioned above the integrated electrode. In this state, the ground potential may be supplied to the integrated electrode via the switch to ignite plasma between the integrated electrode and the vessel 15. Furthermore, no sputtering occurs from the first sputtering target 18a during the plasma CVD process because the first electrode 19a is grounded and the pressure inside the container 15 is higher than the pressure during the sputtering process.

[0047] <Pre-sputtering process (target correction process, target cleaning)> A method for performing a pre-sputtering process on the particles 14 or electronic components using the composite apparatus 11 shown in Figures 3 and 4 will be described. The pre-sputtering process is a process for removing a CVD film that has adhered to the surface of the first sputtering target 18a due to the plasma CVD process, thereby restoring the surface of the first sputtering target 18a to a clean state.

[0048] The composite apparatus 11 shown in FIG. 3 has a control unit 31, which controls the composite apparatus 11 so as to perform the following pre-sputtering process.

[0049] The first electrode 19a is moved by the moving mechanism 21 so that the first sputtering target 18a is positioned above, and sputtering is performed between the first sputtering target 18a and the container 15, thereby cleaning the first sputtering target 18a and correcting it to a clean state.

[0050] This is explained in detail below. The first electrode 19a is moved by the moving mechanism 21 so that the first sputtering target 18a is positioned above (see FIGS. 3 and 4). Next, argon gas or nitrogen gas is introduced into the vessel 15 through the gas inlet of the gas inlet 23. Next, the chamber 12 is depressurized using the exhaust mechanism 13. The pressure inside the chamber at this time is, for example, approximately 1 Pa. Then, a high-frequency voltage is applied to the first electrode 19a via the first switch 25 and the third switch 28 by the plasma power source 26, and a ground potential is supplied to the vessel 15 via the second switch 27 (the first to third switches 25, 27, and 28 are set to the positions shown in FIG. 1). This applies a high-frequency voltage between the first sputtering target 18a and the vessel 15. In this way, the first sputtering target 18a is reverse sputtered, and the CVD film can be removed from the surface of the first sputtering target 18a. Furthermore, oxides and other contaminants can also be removed from the surface of the first sputtering target 18a. Furthermore, during the pre-sputtering process, since first sputtering target 18a is positioned above, a sputtered film is not formed on particles 14 or electronic components contained below container 15.

[0051] <Surface modification treatment> A method for performing a surface modification treatment on the fine particles 14 or electronic components using the composite device 11 shown in FIGS. 3 and 4 will be described.

[0052] The composite device 11 shown in FIG. 3 has a control unit 31, which controls the composite device 11 so as to perform the following surface modification process.

[0053] The first electrode 19a is moved by the moving mechanism 21 so that the first sputtering target 18a is positioned above, and at least one gas selected from argon gas, oxygen gas, nitrogen gas, fluorine gas, and an inert gas is introduced into the container 15. The container 15 is rotated or subjected to a pendulum motion using the operating mechanism 16, thereby generating plasma of the at least one gas while stirring or rotating the particles 14 or electronic components in the container 15, thereby modifying the surfaces of the particles 14 or electronic components.

[0054] This is explained in detail below. A plurality of particles 14 or electronic components are placed in the container 15. The first electrode 19a is moved by the moving mechanism 21 so that the first sputtering target 18a is positioned above (see FIGS. 3 and 4). Next, at least one gas selected from argon gas, oxygen gas, nitrogen gas, fluorine gas, and an inert gas is introduced into the container 15 through the gas inlet of the gas inlet 23 as shown by the arrow. The chamber 12 is then depressurized using the exhaust mechanism 13. The container 15 is then rotated or swung by the operating mechanism 16, thereby stirring or rotating the particles 14 or electronic components in the container 15. This maintains the pressure inside the container 15 at a level suitable for the surface modification process (e.g., approximately 10 Pa) by balancing the controlled gas flow rate and exhaust capacity. This pressure is approximately intermediate between the pressures used during plasma CVD and sputtering. Thereafter, a high-frequency voltage is applied to the container 15 via the second switch 27 by the plasma power supply 26, and a ground potential is supplied to the first electrode 19a via the first switch 25 and the third switch 28. This ignites plasma between the first electrode 19a and the container 15. This generates plasma within the container 15, modifying the surfaces of the particles 14 or electronic components. The surface modification is, for example, oxidizing, nitriding, or fluorinating the surfaces of the particles 14 or electronic components. In other words, the particles 14 or electronic components are rolled by the pendulum motion of the container 15, so that the entire surface of the particles 14 or electronic components can be easily modified. In the above-described surface modification treatment, a ground potential is supplied to the first electrode 19a via the first switch 25 and the third switch 28 to ignite plasma between the first electrode 19a and the container 15. Alternatively, a ground potential may be supplied to the second electrode 19b via the first switch 25 and the third switch 28 to ignite plasma between the second electrode 19b and the container 15. In this case, the second electrode 19 may not hold the second sputtering target 18b. Alternatively, the first electrode 19a and the second electrode 19b may be integrated into one electrode, the first sputtering target 18a may be held on the integrated electrode, and the first sputtering target 18a may be positioned above the integrated electrode. In this state, the ground potential may be supplied to the integrated electrode via the switch to ignite plasma between the electrode and the container 15. Furthermore, no sputtering occurs from the first sputtering target 18a during the surface modification process because the first electrode 19a is grounded and the pressure inside the container 15 is higher than the pressure during the sputtering process.

[0055] <1. Plasma CVD processing + sputtering processing, and sputtering processing + plasma CVD processing> First, the above-described plasma CVD process is performed. Then, the above-described sputtering process is performed continuously without removing the particles 14 or electronic components from the container 15. Between the plasma CVD process and the sputtering process, the position of the first sputtering target 18a is moved, the gas is switched, the pressure inside the chamber 12 is adjusted, and so on.

[0056] For example, a DLC (Diamond-Like Carbon) film is formed on Cu particles by plasma CVD, and then a Pt film is formed on the DLC film by sputtering. This process provides the following benefits: (1) The DLC film can suppress or prevent oxidation of Cu particles. (2) By performing the plasma CVD process, the DLC film is not only formed on the Cu particles, but also on the inner surface of the container 15. Because the container 15 is made of a metal such as SUS, the Cu particles, which have a small particle size, tend to adhere to the inner surface of the container 15. However, when the inner surface of the container 15 is coated with a DLC film, the Cu particles become more slidable during pendulum motion, preventing them from adhering to the inner surface of the container 15 and also preventing the aggregation of the Cu particles. As a result, the Pt film can be formed with good uniformity.

[0057] Alternatively, the sputtering process may be followed by the plasma CVD process, in which case the position of the first sputtering target 18a may be moved, the gas may be switched, the pressure in the chamber 12 may be adjusted, or other actions may be performed between the sputtering process and the plasma CVD process. Furthermore, the above-mentioned pre-sputtering process may be carried out before the above-mentioned sputtering process.

[0058] When both the plasma CVD process and the sputtering process are performed, the particles 14 or the electronic component can be prevented from being exposed to the atmosphere during the processes.

[0059] <2. Sputtering treatment + plasma CVD treatment> The difference from the above <1. Plasma CVD treatment + sputtering treatment, and sputtering treatment + plasma CVD treatment> is that the treatment is carried out without using a moving mechanism, or by using a combined apparatus that has no moving mechanism. This will be explained in detail below.

[0060] As shown in FIGS. 1 and 2, the first sputtering target 18a is held on the first electrode 19a so that it is positioned downward. Furthermore, the fine particles 14 or electronic components are placed in the container 15. Next, argon gas or nitrogen gas is introduced into the container 15 through the gas inlet of the gas inlet 23 as shown by the arrow. Next, the chamber 12 is depressurized using the exhaust mechanism 13. At this time, the pressure inside the chamber 12 is, for example, approximately 1 Pa. The container 15 is then rotated or oscillated using the operating mechanism 16 to agitate or rotate the fine particles 14 or electronic components inside the container 15. Then, a high-frequency voltage is applied to the first electrode 19a via the first switch 25 and the third switch 28 by the plasma power source 26, and a ground potential is supplied to the container 15 via the second switch 27. This applies high-frequency voltage between the first sputtering target 18a and the container 15, thereby performing sputtering, and ultrafine particles having a diameter smaller than that of the fine particles or electronic components are attached to the fine particles 14 or electronic components, or a thin film is formed.

[0061] The source gas is then introduced into the container 15 through the gas inlet of the gas inlet unit 23, as shown by the arrow. Next, the pressure inside the chamber 12 is reduced using the exhaust mechanism 13. The container 15 is then rotated or swung using the operating mechanism 16, stirring or rotating the particles 14 or electronic components inside the container 15. The source gas is then sprayed onto the particles 14 rolling around inside the container 15. The controlled balance of gas flow rate and exhaust capacity maintains a pressure suitable for film formation using the plasma CVD method (e.g., approximately 20 Pa). Because this pressure is higher than the pressure during sputtering, sputtering does not occur. Then, a high-frequency voltage is applied to the container 15 via the second switch 27 by the plasma power supply 26, and a ground potential is supplied to the first electrode 19a via the first switch 25 and the third switch 28. This ignites a plasma between the first electrode 19a and the container 15. This generates plasma inside the container 15, causing ultrafine particles to adhere to the particles 14 or electronic components, or forming a thin film.

[0062] <2. Plasma CVD processing + sputtering processing> The difference from the above <1. Plasma CVD treatment + sputtering treatment, and sputtering treatment + plasma CVD treatment> is that the treatment is carried out without using a moving mechanism, or by using a combined apparatus that has no moving mechanism. This will be explained in detail below.

[0063] In the above <2. Sputtering treatment + plasma CVD treatment>, the sputtering treatment is performed immediately after the plasma CVD treatment, but in this case, the order is reversed and the plasma CVD treatment is performed immediately after the sputtering treatment. This will be explained in detail below.

[0064] 1 and 2, a first sputtering target 18a is held on a first electrode 19a so as to be positioned downward. Furthermore, fine particles 14 or electronic components are placed in a container 15. Next, by performing the plasma CVD process of <2. Sputtering process + plasma CVD process> described above, ultrafine particles are attached to the fine particles 14 or electronic components, or a thin film is formed.

[0065] Thereafter, argon gas or nitrogen gas is introduced into the container 15 from the gas inlet of the gas introduction part 23 as shown by the arrow, and the sputtering process of <2. Sputtering process + plasma CVD process> described above is performed, thereby adhering or forming a thin film of ultrafine particles having a diameter smaller than that of the fine particles or electronic components onto the fine particles 14 or electronic components.

[0066] <Surface modification treatment + sputtering treatment> First, the surface modification treatment described above is performed. Then, the sputtering treatment described above is performed continuously without removing the particles 14 or electronic components from the container 15. Between the surface modification treatment and the sputtering treatment, the position of the first sputtering target 18a is moved, the gas is switched, the pressure inside the chamber 12 is adjusted, and so on.

[0067] Alternatively, the surface modification treatment may be performed consecutively after the sputtering treatment. In this case, it is also advisable to move the position of the first sputtering target 18a, switch the gas, adjust the pressure inside the chamber 12, etc. between the sputtering treatment and the surface modification treatment.

[0068] Furthermore, the above-mentioned pre-sputtering process may be carried out before the above-mentioned sputtering process.

[0069] When both the surface modification treatment and the sputtering treatment are performed, the particles 14 or the electronic components can be prevented from being exposed to the atmosphere during the treatment, thereby improving the quality of the particles or the electronic components obtained after the treatment.

[0070] <Sputtering process + sputtering process> As shown in FIGS. 1 and 2, a first sputtering target 18a is held on a first electrode 19a, and a second sputtering target 18b is held on a second electrode 19b. Furthermore, fine particles or electronic components are placed in a container 15. Next, the first electrode 19a is moved by a moving mechanism 21 so that the first sputtering target 18a is positioned downward. Next, argon gas or nitrogen gas is introduced into the container 15 through the gas inlet of the gas inlet 23, as shown by the arrow. Next, the chamber 12 is depressurized using an exhaust mechanism 13. Then, the container 15 is rotated or oscillated using an operating mechanism 16, thereby stirring or rotating the fine particles 14 or electronic components in the container 15. Then, a high-frequency voltage is applied to the first electrode 19a via a first switch 25 and a third switch 28 by a plasma power source 26, and a ground potential is supplied to the container 15 via a second switch 27. This applies a high-frequency voltage between the first sputtering target 18a and the container 15. In this way, by performing a sputtering process on the particles 14 or electronic components in the container 15, first ultrafine particles having a diameter smaller than the particles 14 or electronic components can be attached to the particles 14 or electronic components, or a first thin film can be formed on the particles 14 or electronic components. In other words, by causing the container 15 to swing like a pendulum, the particles 14 or electronic components are rolled, which makes it easy to uniformly coat the entire surfaces of the particles 14 or electronic components with a first sputtered film. In this case, the particles 14 are, for example, SiO2 particles, and the first sputtered film is, for example, a Ti film.

[0071] Next, as shown in FIGS. 3 and 4 , the second electrode 19b is moved by the moving mechanism 21 so that the second sputtering target 18b is positioned below. Next, argon gas or nitrogen gas is introduced into the container 15 through the gas inlet of the gas inlet 23, as shown by the arrow. Next, the chamber 12 is depressurized using the exhaust mechanism 13. The container 15 is then rotated or oscillated using the operating mechanism 16, thereby stirring or rotating the particles 14 or electronic components in the container 15. Then, a high-frequency voltage is applied to the second electrode 19b via the first switch 25 and the third switch 28 by the plasma power source 26, and a ground potential is supplied to the container 15 via the second switch 27. This applies a high-frequency voltage between the second sputtering target 18b and the container 15. By performing a sputtering process on the particles 14 or electronic components in the container 15 in this manner, second ultrafine particles having a smaller diameter than the particles 14 or electronic components can be attached to the particles 14 or electronic components, or a second thin film can be formed on the particles 14 or electronic components. That is, the particles 14 or the electronic components are rolled by the pendulum motion of the container 15, so that the entire surface of the particles 14 or the electronic components can be easily coated uniformly with the second sputtered film. In this case, the second sputtered film is, for example, a Cu film.

[0072] <Sputtering treatment + surface modification treatment + sputtering treatment> In the above-described "sputtering process + sputtering process," a surface modification process is performed after the first sputtered film is formed and before the second sputtered film is formed. Details of the surface modification process are as follows: At least one gas selected from argon gas, oxygen gas, nitrogen gas, fluorine gas, and an inert gas is introduced into the container 15 through the gas inlet of the gas inlet unit 23, as indicated by the arrow. Next, the pressure inside the chamber 12 is reduced using the exhaust mechanism 13. The container 15 is then rotated or oscillated using the operating mechanism 16 to agitate or rotate the particles 14 or electronic components inside the container 15. This maintains the pressure inside the container 15 at a level suitable for the surface modification process by balancing the controlled gas flow rate and exhaust capacity. Then, a high-frequency voltage is applied to the container 15 via the second switch 27 by the plasma power source 26, and a ground potential is supplied to the first electrode 19a via the first switch 25 and the third switch 28. This ignites a plasma between the first electrode 19a and the container 15. This generates plasma within the container 15, modifying the surfaces of the particles 14 or electronic components. The surface modification is, for example, oxidizing, nitriding, or fluorinating the surfaces of the particles 14 or electronic components. In other words, the particles 14 or electronic components are rolled by the pendulum motion of the container 15, so that the entire surface of the particles 14 or electronic components can be easily modified.

[0073] <1. Method for producing coated microparticles> The composite device 11 shown in FIGS. 3 and 4 is used to produce the coated particles shown in FIG. First, a first sputtering target 18a made of a metal such as Zn or Au is held on a first electrode 19a. A plurality of plastic (e.g., polyethylene, polystyrene, PMMA (acrylic)) particles 14 or electronic components are placed in a container 15. The first electrode 19a is moved by a moving mechanism 21 so that the first sputtering target 18a is positioned at the top. Then, a source gas is introduced into the container 15 from the gas inlet of the gas inlet 23 as shown by the arrow. Next, the pressure inside the chamber 12 is reduced using an exhaust mechanism 13. Then, a plasma CVD method is performed while stirring or rotating the particles 14 in the container 15 by causing the container 15 to swing in a pendulum motion using an operating mechanism 16. This allows a DLC film 33 or Si a C b N c H d A film is formed. a C b N c H d The source gas for film formation is, for example, HMDS-N (hexamethyldisilazane; CH 19 NSi2) or HMDS (hexamethyldisilazane) is used.

[0074] 1 and 2, the first electrode 19a is moved by the moving mechanism 21 so that the first sputtering target 18a held by the first electrode 19a is positioned downward, and argon gas or nitrogen gas is introduced into the container 15 from the gas inlet of the gas inlet 23 as shown by the arrow. Next, the pressure inside the chamber 12 is reduced using the exhaust mechanism 13. Then, the container 15 is made to swing using the operating mechanism 16, thereby stirring or rotating the fine particles 14 inside the container 15 while sputtering, thereby forming a DLC film 33 or Si a C b N c H d A metal film 34 such as a Zn film or an Au film is formed on the film. It is preferable that a, b, c, and d satisfy the following formulas 1 to 4. (Formula 1) 0.2≦a≦0.6 (Formula 2)0.1≦b≦0.3 (Formula 3) 0.1≦c≦0.3 (Formula 4)0.03≦d≦0.2

[0075] According to the above-described method for producing coated microparticles, by forming a DLC film 33 on the microparticles 14 made of plastic, aggregation of the microparticles 14 can be suppressed compared to when a metal film 34 is directly formed on the microparticles 14. In other words, since the microparticles 14 made of plastic tend to aggregate, it is not possible to form a metal film 34 on the microparticles 14 with good uniformity. However, since the metal film 34 is formed after the DLC film 33 is formed on the microparticles 14, it is possible to form a metal film 34 on the microparticles 14 with good uniformity.

[0076] Furthermore, when the DLC film 33 is formed on the particles 14, the DLC film is also formed on the inner wall surface of the container 15, which prevents the particles 14 from adsorbing to the wall surface of the container 15. As a result, it becomes possible to form the metal film 34 on the surface of the particles 14 with good uniformity.

[0077] In addition, the particle 14 contains Si a C b N c H d The film is formed and the Si a C b N c H d When a metal film 34 is formed on the film, the adhesion between the metal film 34 and the particles 14 can be improved. In other words, it is difficult to form a metal film 14 directly on the particles 14 made of plastic, but it is possible to form a metal film 14 on the particles 14 made of Si. a C b N c H d By forming the metal film 34 after forming the film, it becomes possible to easily form the metal film 34 on the fine particles 14 made of plastic.

[0078] <2. Method for producing coated microparticles> First, a DLC film is formed on the plastic particles 14 in the same manner as in the above-mentioned <1. Method for producing coated particles>, and Si is deposited on the DLC film. a C b N c H d A film is formed.

[0079] Next, Si is coated with the same method as in <1. Method for producing coated particles> above. a C b N c H d A metal film such as a Zn film or an Au film is formed on the film.

[0080] The method for producing coated fine particles described above also provides the same effects as those in <1. Method for producing coated fine particles> described above.

[0081] In addition, Si is placed between the DLC film and the metal film. a C b N c H d By disposing the film, it is possible to improve the adhesion between the DLC film and the metal film. [Explanation of symbols]

[0082] 11…Composite device 12...Chamber 13...Exhaust mechanism 14...Fine particles 15…Container 16...Operating mechanism 17...Arrow 18a...First sputtering target 18b...Second sputtering target 19...Electrode 21...Movement mechanism 22...Gas 23...Gas inlet 25...First switch 26...Plasma power supply 27...Second switch 28...Third switch 30...Gravity direction (directly below) 31...Control unit 33…DLC film 34...Metal film

Claims

1. A chamber; an exhaust mechanism that evacuates the chamber; a container disposed in the chamber and containing fine particles or electronic components, the container having a cross-sectional internal shape of a polygon, a circle, or an ellipse; an operating mechanism that rotates or swings the container around a rotation axis that is perpendicular to the cross section; a first electrode disposed within the vessel and holding a first sputtering target; a gas inlet for introducing at least one gas selected from an inert gas, oxygen gas, nitrogen gas, fluorine gas, and a raw material gas into the container; a first supply mechanism for supplying power or a ground potential to the first electrode; a second supply mechanism for supplying a ground potential or power to the container; a moving mechanism that rotates the first electrode to move the position of the first sputtering target held by the first electrode so as to position the first sputtering target upward or downward; A composite device comprising:

2. In claim 1, the first supply mechanism is a plasma power source or a ground electrically connected to the first electrode via a first switch; The composite apparatus is characterized in that the second supply mechanism is a ground or a plasma power source electrically connected to the container via a second switch.

3. In claim 1 or 2, A control unit is provided. The control unit performs sputtering while stirring or rotating the particles or the electronic components in the container by using the operating mechanism to rotate or swing the container, and then adheres or forms a thin film of ultrafine particles having a diameter smaller than that of the particles or the electronic components to the particles or the electronic components, and then: A composite device characterized by performing a plasma CVD method while stirring or rotating the fine particles or electronic components in the container by rotating or pendulum-moving the container using the operating mechanism, thereby controlling so that ultrafine particles having a diameter smaller than that of the fine particles or electronic components adhere to the fine particles or electronic components or form a thin film on the fine particles or electronic components.

4. In claim 1 or 2, A control unit is provided. The control unit performs a plasma CVD method while stirring or rotating the particles or the electronic components in the container by rotating or pendulum-moving the container using the operating mechanism, and after attaching or forming a thin film of ultrafine particles having a diameter smaller than that of the particles or the electronic components on the particles or the electronic components, A composite device characterized by using the operating mechanism to rotate or swing the container, thereby performing sputtering while stirring or rotating the fine particles or electronic components in the container, thereby controlling the deposition of ultrafine particles smaller in diameter than the fine particles or electronic components onto the fine particles or electronic components, or the formation of a thin film on the fine particles or electronic components.

5. In claim 1 or 2, A control unit is provided. The control unit controls the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is positioned downward, and the container is rotated or swung by the operating mechanism to perform sputtering while stirring or rotating the particles or electronic components in the container, thereby controlling the deposition of ultrafine particles having a diameter smaller than that of the particles or electronic components or the formation of a thin film on the particles or electronic components.

6. In claim 1 or 2, A control unit is provided. The control unit controls the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is positioned above, and performs a plasma CVD method while stirring or rotating the particles or electronic components in the container by rotating or pendulum-moving the container using the operating mechanism, thereby controlling the deposition of ultrafine particles having a diameter smaller than that of the particles or electronic components or the formation of a thin film on the particles or electronic components.

7. In claim 1 or 2, A control unit is provided. The control unit controls the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is positioned upward, and performs sputtering between the first sputtering target and the container, thereby correcting the first sputtering target.

8. In claim 1 or 2, A control unit is provided. The control unit controls the first electrode using the moving mechanism so that the first sputtering target held by the first electrode is positioned upward, introduces at least one gas selected from an inert gas, oxygen gas, nitrogen gas, and fluorine gas into the container, and generates plasma of the at least one gas while stirring or rotating the particles or electronic components in the container by rotating or pendulum-moving the container using the operating mechanism, thereby modifying the surfaces of the particles or electronic components.

9. In claim 1 or 2, A control unit is provided. The control unit moves the first electrode by the movement mechanism so that the first sputtering target held by the first electrode is positioned below, and performs sputtering while stirring or rotating the fine particles or the electronic components in the container by rotating or pendulum-moving the container using the operation mechanism, thereby adhering ultrafine particles having a diameter smaller than that of the fine particles or the electronic components to the fine particles or the electronic components or forming a thin film thereon, A composite apparatus characterized by the fact that the first electrode is moved by the moving mechanism so that the first sputtering target held by the first electrode is positioned above, and the container is rotated or swung by the operating mechanism to perform a plasma CVD method while stirring or rotating the particles or electronic components in the container, thereby controlling the deposition of ultrafine particles having a diameter smaller than that of the particles or electronic components or the formation of a thin film on the particles or electronic components.

10. In claim 1 or 2, A control unit is provided. The control unit moves the first electrode by the movement mechanism so that the first sputtering target held by the first electrode is positioned above, and performs a plasma CVD method while stirring or rotating the fine particles or the electronic components in the container by rotating or pendulum-moving the container using the operation mechanism, thereby adhering ultrafine particles having a diameter smaller than that of the fine particles or the electronic components to the fine particles or the electronic components or forming a thin film thereon, A composite apparatus characterized by the fact that the first electrode is moved by the moving mechanism so that the first sputtering target held by the first electrode is positioned below, and the container is rotated or subjected to a pendulum motion using the operating mechanism to perform sputtering while stirring or rotating the particles or electronic components in the container, thereby controlling the deposition of ultrafine particles having a diameter smaller than that of the particles or electronic components onto the particles or electronic components or the formation of a thin film thereon.

11. In claim 1 or 2, A control unit is provided. the control unit moves the first electrode by the movement mechanism so that the first sputtering target held by the first electrode is positioned above, introduces at least one gas selected from an inert gas, oxygen gas, nitrogen gas, and fluorine gas into the container, and generates plasma of the at least one gas while stirring or rotating the particles or the electronic components in the container by rotating or pendulum-moving the container using the operation mechanism, thereby modifying the surfaces of the particles or the electronic components, and then: A composite apparatus characterized by the fact that the first electrode is moved by the moving mechanism so that the first sputtering target held by the first electrode is positioned below, and the container is rotated or subjected to a pendulum motion using the operating mechanism to perform sputtering while stirring or rotating the particles or electronic components in the container, thereby controlling the deposition of ultrafine particles having a diameter smaller than that of the particles or electronic components onto the particles or electronic components or the formation of a thin film thereon.

12. A chamber; an exhaust mechanism that evacuates the chamber; a container disposed in the chamber and containing fine particles or electronic components, the container having a cross-sectional internal shape of a polygon, a circle, or an ellipse; an operating mechanism that rotates or swings the container around a rotation axis that is perpendicular to the cross section; a first electrode disposed within the vessel and holding a first sputtering target; a second electrode disposed within the vessel and holding a second sputtering target; a moving mechanism that rotates the first and second electrodes to move the positions of the first sputtering target held by the first electrode and the second sputtering target held by the second electrode so as to position the first sputtering target held by the first electrode and the second sputtering target held by the second electrode upward or downward, respectively; a gas inlet for introducing at least one gas selected from an inert gas, oxygen gas, nitrogen gas, fluorine gas, and a raw material gas into the container; a first supply mechanism for supplying power or a ground potential to the first electrode; a second supply mechanism for supplying power or a ground potential to the second electrode; a third supply mechanism for supplying a ground potential or power to the container; A composite device comprising:

13. In claim 12, the first supply mechanism is a plasma power source or a ground electrically connected to the first electrode via a first switch and a third switch; the second supply mechanism is a plasma power source or a ground electrically connected to the second electrode via a first switch and a third switch; The composite apparatus is characterized in that the third supply mechanism is a ground or a plasma power source electrically connected to the container via a second switch.

14. In claim 12 or 13, A control unit is provided. The control unit moves the first electrode by the movement mechanism so that the first sputtering target held by the first electrode is positioned below, and performs sputtering while stirring or rotating the particles or the electronic components in the container by rotating or pendulum-moving the container using the operation mechanism, thereby adhering first ultrafine particles having a diameter smaller than that of the particles or the electronic components to the particles or the electronic components or forming a first thin film thereon, A composite apparatus characterized by controlling the deposition of second ultrafine particles having a diameter smaller than that of the fine particles or electronic components onto the first ultrafine particles or the first thin film, or the formation of a second thin film, by moving the second electrode by the moving mechanism so that the second sputtering target held by the second electrode is positioned below, and by rotating or pendulum-moving the container using the operating mechanism, the fine particles or electronic components in the container are stirred or rotated while sputtering.

15. In claim 14, the control unit controls the introduction of at least one gas selected from an inert gas, oxygen gas, nitrogen gas, and fluorine gas into the container after the first ultrafine particles are attached or the first thin film is formed, and before the second ultrafine particles are attached or the second thin film is formed, and generates plasma of the at least one gas while stirring or rotating the particles or the electronic components in the container by rotating or pendulum-moving the container using the operating mechanism, thereby modifying the surface of the first ultrafine particles or the first thin film.

16. 11. A method for producing coated microparticles using the composite apparatus according to claim 10, Placing plastic microparticles in the container, moving the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is positioned above; The container is rotated or subjected to a pendulum motion using the operating mechanism, and the plastic fine particles in the container are stirred or rotated while the plasma CVD method is performed, whereby a DLC film or Si film is formed on the plastic fine particles. ａ C ｂ N ｃ H ｄ A film is formed, moving the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is positioned below; The container is rotated or subjected to a pendulum motion using the operating mechanism, whereby sputtering is performed while stirring or rotating the plastic fine particles in the container, thereby forming the DLC film or the Si ａ C ｂ N ｃ H ｄ A metal film is formed on the film, The method for producing coated fine particles is characterized in that the a, b, c, and d satisfy the following formulas 1 to 4: (Formula 1) 0.2≦a≦0.6 (Formula 2) 0.1≦b≦0.3 (Formula 3) 0.1≦c≦0.3 (Formula 4) 0.03≦d≦0.2

17. 11. A method for producing coated microparticles using the composite apparatus according to claim 10, Placing plastic microparticles in the container, moving the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is positioned above; The container is rotated or subjected to a pendulum motion using the operating mechanism, thereby performing a plasma CVD method while stirring or rotating the plastic fine particles in the container, thereby forming a DLC film on the plastic fine particles; The container is rotated or subjected to a pendulum motion using the operating mechanism, and the plastic fine particles in the container are stirred or rotated while the plasma CVD method is performed, whereby Si is deposited on the DLC film. ａ C ｂ N ｃ H ｄ A film is formed, moving the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is positioned below; The container is rotated or subjected to a pendulum motion using the operating mechanism, whereby the plastic fine particles in the container are agitated or rotated while sputtering, thereby ａ C ｂ N ｃ H ｄ A metal film is formed on the film, The method for producing coated fine particles is characterized in that the a, b, c, and d satisfy the following formulas 1 to 4: (Formula 1) 0.2≦a≦0.6 (Formula 2) 0.1≦b≦0.3 (Formula 3) 0.1≦c≦0.3 (Formula 4) 0.03≦d≦0.2

Images