Steaming device

Abstract

This vapor deposition device (1) comprises a mask (2) made of metal, a touch plate (4) for pressing a substrate (3) that is fixed on the mask (2) from the opposite side relative to the mask (2), hook units (5) for supporting the periphery of the substrate (3) and the touch plate (4), and a magnet (6) provided on the reverse side of the touch plate (4) relative to the substrate (3). The touch plate (4) is curved toward the reverse side relative to the substrate (3).

Description

[Technical Field]

[0001] The present invention relates to a vapor deposition apparatus. [Background technology]

[0002] Patent Document 1 discloses a method for aligning a deposition apparatus. Here, alignment refers to aligning the mask and substrate parallel to each other and aligning their alignment marks (film formation positions). If the substrate is bent due to its own weight and is not parallel, the direction of extension of the substrate will be uneven when it is placed on the mask after alignment. This makes it easy for the positions of the alignment holes on the mask and the alignment marks on the substrate to misalign, and misalignment will be detected during final confirmation. As a result, alignment retries will be required.

[0003] Therefore, a touch plate (hereinafter referred to as TP) is provided on the opposite side of the mask, and the weight of the TP presses down on the substrate, suppressing bending of the substrate. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] International Publication No. 2020 / 183552 Summary of the Invention [Problem to be solved by the invention]

[0005] Before being placed on the mask, the substrate is bent and its periphery is supported by the hooks. Simply placing a TP on the substrate in this state places a heavy load on the edge of the substrate, which is in local contact with the hook, resulting in cracking of the substrate. This is shown in Figure 8. The substrate 3, bent under its own weight, is supported by the hooks 5, and the edge of the substrate 3 is slightly raised above the hooks 5. When TP4a is placed on the substrate 3 in this state, a downward pressure is applied to the contact points T1 and T2 where the substrate 3 and TP4a meet. As a result, downward pressure from the contact points T1 and T2 and upward pressure due to the bending of the substrate 3 are applied, resulting in a heavy load being applied to the contact point LD. To mitigate this heavy load, a shim plate 7 must be placed between the hooks 5 and TP4a, creating a gap between the hooks 5 and TP4a, thereby reducing the downward pressure on the contact points T1 and T2.

[0006] Even when a TP is used, the above-mentioned misalignment occurs due to insufficient suppression of substrate deflection. This is shown in Figures 9A to 9D. Figure 9A shows the state after the substrate 3 and mask 2 are aligned. Because the amount of deflection of TP4a is smaller than the amount of deflection of the substrate 3, the substrate 3 and TP4a contact each other at their peripheries and are slightly separated in their centers. Next, the hook portion 5 descends, and the substrate 3 and mask 2 contact each other at their centers, as shown in Figure 9B. At this time, the substrate 3 and TP4a contact each other at their peripheries, as in Figure 9A. After that, the hook portion 5 descends further, and the substrate 3 and mask 2 contact each other over their entire surfaces. At this time, because the amount of deflection of the mask 2 is smaller than the amount of deflection of the substrate 3 and TP4a, as the deflection of the substrate 3 is eliminated, the substrate 3 and TP4a begin to contact each other at their centers, and the edges of the substrate 3 and TP4a begin to separate slightly. Thereafter, TP4a descends, and the periphery of TP4a comes into contact with the substrate 3, which is slightly separated as shown in FIG. 9C, and the entire surfaces of the mask 2, substrate 3 and TP4a come into contact with each other as shown in FIG. 9D.

[0007] 9B to 9C, the contact point between the substrate 3 and TP4a moves from the periphery to the center, making the starting point (fixed point) of the extension of the substrate 3 unstable at only the center of TP4a (contact point with the substrate 3). Therefore, when the substrate 3 is caught at the contact point with TP4a and extends, the direction of the release of the deflection becomes irregular, causing the alignment between the substrate 3 and the mask 2 to shift.

[0008] Furthermore, as the number of alignment retries to correct this misalignment increases, the transfer of foreign matter between the mask 2 and the substrate 3 also increases.

[0009] An object of one aspect of the present invention is to suppress misalignment of a substrate after alignment in a vapor deposition apparatus. [Means for solving the problem]

[0010] A deposition apparatus according to one embodiment of the present invention comprises a metal mask, a touch plate that presses a substrate fixed on the mask from the side opposite the mask, a hook portion that supports the substrate and the periphery of the touch plate, and a magnet that is installed on the side of the touch plate opposite the substrate, and the touch plate is warped on the side opposite the substrate. [Effects of the Invention]

[0011] According to one aspect of the present invention, in the vapor deposition device, the touch plate is warped in the opposite direction to the substrate, so that displacement of the substrate after alignment can be suppressed. [Brief explanation of the drawings]

[0012] [Figure 1] 1 is a diagram showing the configuration of a vapor deposition apparatus according to a first embodiment of the present invention. [Figure 2] 1 is a diagram showing a touch plate according to a first embodiment of the present invention. [Figure 3] 1 is a top view showing the appearance of a hook part according to the first embodiment of the present invention. [Figure 4A] FIG. 2 is a cross-sectional view showing a gap according to the first embodiment of the present invention. [Figure 4B] FIG. 2 is a cross-sectional view showing a gap according to the first embodiment of the present invention. [Figure 5A] 3 is a diagram showing a contact state between the substrate according to the first embodiment of the present invention and a touch plate. FIG. [Figure 5B] 3 is a diagram showing a contact state between the substrate according to the first embodiment of the present invention and a touch plate. FIG. [Figure 6A] 1A and 1B are diagrams illustrating contact between a touch plate, a substrate, and a mask according to the first embodiment of the present invention. [Figure 6B] 1A and 1B are diagrams illustrating contact between a touch plate, a substrate, and a mask according to the first embodiment of the present invention. [Figure 6C] 1A and 1B are diagrams illustrating contact between a touch plate, a substrate, and a mask according to the first embodiment of the present invention. [Figure 6D] 1A and 1B are diagrams illustrating contact between a touch plate, a substrate, and a mask according to the first embodiment of the present invention. [Figure 7A] FIG. 1 is a diagram for explaining the effects according to the first embodiment of the present invention. [Figure 7B] FIG. 1 is a diagram for explaining the effects according to the first embodiment of the present invention. [Figure 7C] FIG. 1 is a diagram for explaining the effects according to the first embodiment of the present invention. [Figure 8] FIG. 10 is a diagram showing a substrate and a touch plate supported by hook portions according to the prior art. [Figure 9A] FIG. 1 is a diagram illustrating an alignment method according to the prior art. [Figure 9B] FIG. 1 is a diagram illustrating an alignment method according to the prior art. [Figure 9C] FIG. 1 is a diagram illustrating an alignment method according to the prior art. [Figure 9D] FIG. 1 is a diagram illustrating an alignment method according to the prior art. DETAILED DESCRIPTION OF THE INVENTION

[0013] [Embodiment 1] Hereinafter, the first embodiment of the present invention will be described in detail.

[0014] (Configuration of Vapor Deposition Apparatus 1) FIG. 1 illustrates a portion of the configuration of a vapor deposition apparatus 1. The vapor deposition apparatus 1 is an apparatus for forming, for example, an organic light-emitting diode (OLED) light-emitting layer on a substrate 3. As shown in FIG. 1, the vapor deposition apparatus 1 includes a mask 2, a TP4, a hook portion 5, a magnet 6, and a vapor deposition source 10. The mask 2 is a metal vapor deposition mask that covers the area on the substrate 3 where the light-emitting layer is not to be formed. The TP4 holds the substrate 3, which is fixed on the mask 2, from the side opposite the mask 2. The hook portion 5 supports the periphery (surroundings) of the substrate 3 and the TP4. The magnet 6 is installed on the side opposite the substrate 3 from the TP4 to magnetically attach the mask 2 to the substrate 3. The vapor deposition source 10 emits vapor of an organic material vertically upward to form a light-emitting layer on the substrate 3.

[0015] (Touch Plate 4 Configuration) Figure 2 shows the size of TP4. TP4 width X T , and vertical size Y T are 1.05 times or more and 1.1 times or less the horizontal size Xg and vertical size Yg of the substrate 3, respectively, and the horizontal size X T and vertical size Y T 1, TP4 is warped vertically upward (toward the opposite side from substrate 3) in the long side direction.

[0016] (Configuration of hook portion 5) FIG. 3 is a top view showing the appearance of the hook portion 5 according to this embodiment. As shown in FIG. 3, the hook portions 5 are provided inside the frame 51 in correspondence with the four sides of the substrate 3 and TP4, and support the ends of the substrate 3 and TP4. The number of hook portions 5 may be changed depending on the size of the substrate 3, etc. As will be described in detail later, the hook portions 5 are provided with a buffer material 8 that contacts the substrate 3 and a shim plate (plate member) 7 that contacts TP4. Furthermore, the hook portions 5 are not provided at the four corners (corner portions C) of the substrate 3 and TP4. In other words, the corner portions C of the substrate 3 and TP4 are not supported by the hook portions 5.

[0017] (Gap SP) 4A and 4B are cross-sectional views showing the gap (gap) SP according to this embodiment. TP4 is supported by the hook portion 5 via a shim plate 7. The substrate 3 is supported by the hook portion 5 without the shim plate 7.

[0018] 4A, a cushioning material 8 is provided on the mounting surface of the hook portion 5 that supports the substrate 3 and TP4, and the substrate 3 is placed on the cushioning material 8. TP4 is placed on a shim plate 7 that is provided on the cushioning material 8. The thickness TS of the shim plate 7 is formed to be greater than the thickness of the substrate 3.

[0019] FIG. 4A shows the state in which the substrate 3 and TP4 are placed on the hook portion 5 and the state in which the substrate 3 and mask 2 are in contact, with the end of TP4 supported by the shim plate 7. Because the thickness TS of the shim plate 7 is greater than the thickness TK of the substrate 3, a gap SP is formed between the substrate 3 and TP4 at the hook portion 5. The gap SP is a space surrounded by the substrate 3, TP4, and shim plate 7. In addition, the surface of TP4 facing the substrate 3 is embossed, and protrusions 41 are provided. The protrusions 41 suppress peel electrification that occurs when the substrate 3 and TP4 are peeled off.

[0020] As shown in Figure 4A, TP4 is warped away from the substrate 3. When the substrate 3 is horizontal, the distance TG between the substrate 3 and the protrusion 41 is preferably 0.3 mm or more. The thickness TS of the shim plate 7 is preferably 0.8 mm or more and 1.0 mm or less. The height TT of the protrusion 41 is preferably 0.1 mm or more and 0.3 mm or less.

[0021] Furthermore, when the substrate 3 bends due to its own weight, the substrate 3 and the protrusion 41 come into contact with each other with a force that is not large enough to crack the substrate 3. For example, if the size (Xg x Yg) of the substrate 3 is 920 mm x 730 mm and the thickness TK is 0.5 mm, it is preferable that the thickness TS of the shim plate 7 is 0.9 mm.

[0022] 4B shows a state in which the substrate 3, mask 2, TP4, and magnet 6 are in contact with each other over their entire surfaces. When the substrate 3 and TP4 are horizontal, the protrusions 41 come into contact with the substrate 3.

[0023] (Corner C) 5A and 5B are diagrams showing the contact state between the substrate 3 and TP4 at corner C shown in Fig. 3. Protrusions 42 that thicken TP4 are provided at the four corners of the surface of TP4 facing the substrate 3. The protrusions 42 include an inclined surface 42a that is oblique to the surface of TP4 and a flat surface 42b that is parallel to the surface of TP4.

[0024] 5A shows a state in which the substrate 3 and TP4 are placed on the hook portion 5 and a state in which the substrate 3 and the mask 2 are in contact. When TP4 is warped in the opposite direction to the substrate 3, the protrusion 41 and the substrate 3 are not in contact. On the other hand, part of the slope 42a of the convex portion 42 is in contact with the substrate 3.

[0025] In Figure 5B, the substrate 3, mask 2, TP4, and magnet 6 are in contact with each other on their entire surfaces, and when the substrate 3 and TP4 are horizontal, the protrusion 41 and the flat portion 42b of the convex portion 42 are in contact with the substrate 3.

[0026] According to the above, there is no need to consider cracking of the substrate when placing TP4 on the substrate 3. In addition, because TP4 stably presses the periphery of the substrate 3, the contact point between the substrate 3 and the mask 2 does not shift from the periphery to the center, and substrate misalignment can be suppressed. Furthermore, by reducing the number of alignment retries, the transfer of foreign matter between the mask 2 and the substrate 3 can be reduced. In addition, the center of the substrate 3 is less likely to be rubbed, and scratches on the back surface (the surface of the substrate 3 facing TP4) can be reduced. For example, this is effective when performing a peeling process to peel off the glass base from the substrate 3.

[0027] (Alignment method) 6A to 6D are diagrams illustrating the contact of the convex TP4, the substrate 3, and the mask 2 according to this embodiment, illustrating the deposition alignment method.

[0028] 6A, the substrate 3 and the mask 2 are aligned with each other while the substrate 3 and TP4 are placed on the hook portion 5. At this time, the peripheral edge of the substrate 3 is slightly pressed against the TP4.

[0029] 6B, the hook portion 5 descends, and the mask 2 comes into contact with the substrate 3. At this time, it is checked whether the positions of the substrate 3 and the mask 2 are misaligned, and if they are misaligned, alignment is retried.

[0030] 6C shows a state in which the hook portion 5 is further lowered, bringing the substrate 3 into closer contact with the mask 2. As the substrate 3 rests along the mask 2, the TP4 presses it further from the periphery.

[0031] 6D shows the state where the hook portion 5 has further descended, bringing the entire surfaces of the substrate 3 and the mask 2 into contact. TP4 stretches slightly under its own weight, and the area that presses the periphery of the substrate 3 becomes larger than when it is placed on the hook portion 5.

[0032] (Effects of the First Embodiment) 7A to 7C are diagrams for explaining the effects according to this embodiment.

[0033] Figure 7A shows the ratio of the average number of alignment retries per fixed period in the deposition system. The highest number of retries (April f) in the deposition system 12 using the conventional TP4a was calculated as 1 (100%). Figure 7B shows the average number of retries at a specific stage during that total period.

[0034] 7A shows that the average number of retries for the vapor deposition device 1 has been lower than those for the vapor deposition device 11 and the vapor deposition device 12. Also, FIG. 7B shows that the total average value for the vapor deposition device 1 is low.

[0035] Figure 7C shows the ratio of the number of alignment retries to the number of defects due to foreign particle transfer. The highest total number of retries (April 1) and the highest number of defects (April m) were calculated as 1 (100%). It can be seen that the average number of retries from April 1 to May n dropped from 0.97 to 0.51 from June 0 to June t, and the average number of defects also dropped from 0.74 to 0.25.

[0036] From the above results, by using TP4, the number of alignment retries is reduced, and the amount of misalignment between the alignment mark and the mask hole is also reduced. Therefore, the substrate 3 is flattened to a certain extent by TP4 from the beginning of the temporary alignment, and the expansion of the substrate 3 when it comes into contact with the mask 2 can be made uniform. In other words, the misalignment of the substrate 3 can be suppressed.

[0037] Furthermore, since the number of alignment retries is reduced, it is possible to reduce the number of unnecessary contacts between the substrate 3 and the mask 2. As a result, it is possible to suppress the transfer of foreign matter between the substrate 3 and the mask 2.

[0038] 〔summary〕 The vapor deposition apparatus of aspect 1 includes a metal mask, a touch plate that presses a substrate fixed on the mask from the side opposite the mask, a hook portion that supports the substrate and the periphery of the touch plate, and a magnet that is installed on the touch plate on the side opposite the substrate, and the touch plate is warped on the side opposite the substrate.

[0039] In a second aspect, the touch panel further includes a plate member that is thicker than the substrate, and the touch plate is supported by the hook portion via the plate member, and the substrate is supported by the hook portion without the plate member.

[0040] In a third aspect, the hook portion has a gap between the substrate and the touch plate.

[0041] In a fourth aspect, the hook portions are not provided at the corners of the substrate and the touch plate.

[0042] In a fifth aspect, the touch plate has an embossed surface on the substrate side.

[0043] The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope of the claims. Embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in the technical scope of the present invention. Furthermore, new technical features can be formed by combining the technical means disclosed in each embodiment. [Explanation of symbols]

[0044] 1 Vapor deposition equipment 2. Mask 3. Circuit Board 4 TP (Touch Plate) 5 Hook part 6. Magnets 7 Shim plate (plate material)

Claims

1. A metal mask and a touch plate that presses the substrate fixed on the mask from the side opposite to the mask; a hook portion that supports the substrate and the periphery of the touch plate; a magnet installed on the touch plate opposite to the substrate; a plate member that is thicker than the substrate; Equipped with the touch plate is warped in a direction opposite to the substrate; the touch plate is supported by the hook portion via the plate member, The substrate is supported by the hook portion without the plate member. A vapor deposition apparatus characterized by:

2. The hook portion has a gap between the substrate and the touch plate. The deposition apparatus according to claim 1 .

3. A metal mask; a touch plate that presses the substrate fixed on the mask from the side opposite to the mask; a hook portion that supports the substrate and the periphery of the touch plate; a magnet installed on the touch plate opposite to the substrate; Equipped with the touch plate is warped in a direction opposite to the substrate; The touch plate has an embossed surface on the substrate side. A vapor deposition apparatus characterized by:

4. The hook portions are not provided at the corners of the substrate and the touch plate.

4. The vapor deposition apparatus according to claim 1, wherein the vapor deposition apparatus comprises: a first electrode;

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