Molybdenum compound, method for producing the same, and method for producing thin film containing the same

Abstract

The present invention relates to a molybdenum compound, a method for producing the same, a composition for vapor deposition of a molybdenum-containing thin film containing the same, and a method for producing a molybdenum-containing thin film using the same. The molybdenum compound of the present invention has excellent thermal stability, high volatility, and improved vapor pressure, and by using the same, a molybdenum-containing thin film of uniform thickness can be produced at an improved deposition rate.

Description

[Technical Field]

[0001] The present invention relates to a molybdenum compound, a method for producing the same, a method for producing a thin film containing the same, and a thin film containing the same. [Background technology]

[0002] Various metalorganic precursors are used to form metal thin films. A variety of techniques are used for thin film deposition, including reactive sputtering, ion-assisted deposition, sol-gel deposition, metalorganic chemical vapor deposition (MOCVD), a type of chemical vapor deposition (CVD), and atomic layer deposition (ALD), also known as atomic layer epitaxy (ALE). Chemical vapor deposition (CVD) and atomic layer deposition (ALD) offer advantages such as good composition control, high film uniformity, and good doping control. They also provide excellent conformal deposition, enabling uniform step coverage even over highly nonplanar microelectronic device geometries.

[0003] Chemical vapor deposition (CVD) is a chemical process in which organometallic precursors are used to form thin films on a substrate. In a typical chemical vapor deposition (CVD) process, precursors are reacted or decomposed on the surface of the substrate while passing over the substrate in a low-pressure or atmospheric-pressure chamber. Volatile by-products are removed by a gas stream.

[0004] Atomic layer deposition (ALD) is a method that enables precise thickness control, uniform step coverage, and excellent conformal deposition. It is a method of sequentially growing films by reacting on the substrate surface. It is typically performed in four steps: pulse A, in which an organometallic first precursor forms a monolayer on the substrate; purge A, in which excess first precursor is removed; pulse B, in which a nonmetallic second precursor induces a reaction between the first precursor and the substrate; and purge B, in which unreacted material is removed. These four steps are repeated until a thin film of the desired thickness is obtained.

[0005] Thin films are used in a variety of important applications, such as semiconductor device fabrication and nanotechnology. Such applications include, for example, conductive films, high-refractive-index optical coatings, corrosion-resistant coatings, photocatalytic self-cleaning glass coatings, biocompatible coatings, gate dielectric insulating films in field-effect transistors (FETs), dielectric capacitor layers, capacitor electrodes, gate electrodes, adhesive diffusion barriers, and integrated circuits. Thin films are also used in microelectronic applications, such as high-k dielectric oxides for dynamic random access memory (DRAM) applications, infrared detectors, and ferroelectric perovskites used in non-volatile ferroelectric random access memories (NV-FeFAMs). The continued miniaturization of microelectronic components increases the need for the use of dielectric thin films.

[0006] Many current molybdenum precursors for use in CVD and ALD do not meet the performance requirements required to enable new processes for the fabrication of next-generation devices such as semiconductors. There is a need for the development of molybdenum precursors with improved thermal stability, higher volatility, increased vapor pressure, uniform deposition, and stable deposition rates. Summary of the Invention [Problem to be solved by the invention]

[0007] An object of the present invention is to provide a molybdenum compound and a method for producing the same.

[0008] Another object of the present invention is to provide a composition for depositing a molybdenum-containing thin film, which contains the molybdenum compound.

[0009] A further object of the present invention is to provide a method for producing a molybdenum-containing thin film using the molybdenum compound.

[0010] The present invention also provides a molybdenum-containing thin film having a molybdenum content of 70% or more. [Means for solving the problem]

[0011] The present invention provides a molybdenum compound represented by the following Chemical Formula 1:

[0012] [ka] [In the above Chemical Formula 1, L is C1-C10 alkylene or C3-C10 cycloalkylene, and the alkylene and cycloalkylene of L may be further substituted with C1-C10 alkyl; R1 to R4 are each independently hydrogen or C1-C7 alkyl; R5 is hydrogen, C1-C10 alkyl, C6-C12 aryl, C6-C12 arylC1-C10 alkyl, or C1-C10 alkoxy; Y is -NR 11 R 12 , -OR 13 , or -SR 14 and R 11 ~R 14 are, independently of each other, C1-C10 alkyl, haloC1-C10 alkyl, C3-C10 cycloalkyl, C6-C12 aryl, C6-C12 arylC1-C10 alkyl, or said R11 and R 12 may be linked to form a ring.

[0013] In one embodiment, in Formula 1, L may be C1-C6 alkylene, and the alkylene of L may be further substituted with C1-C6 alkyl; R1 to R4 may each independently be hydrogen or C1-C4 alkyl; and R5 may be hydrogen or C1-C6 alkyl.

[0014] Also, Y is -NR 11 R 12 , -OR 13 , or -SR 14 wherein R 11 ~R 14 are, independently of each other, C1-C6 alkyl, haloC1-C6 alkyl, C3-C6 cycloalkyl, C6-C12 aryl, or C6-C12 arylC1-C6 alkyl, or 11 and R 12 may be linked by a C2-C6 alkylene to form a ring.

[0015] The molybdenum compound according to a preferred embodiment may be represented by the following chemical formula 2:

[0016] [ka] [In the above Chemical Formula 2, R1 to R4 are each independently hydrogen or C1-C4 alkyl; R5 is hydrogen or C1-C4 alkyl; Y is -NR 11 R 12 , -OR 13 , or -SR 14 and R 11 ~R 14 are, independently of each other, C1-C4 alkyl, haloC1-C4 alkyl, or C3-C6 cycloalkyl, or 11 and R 12may be linked by a C2-C6 alkylene to form an alicyclic ring; and m is an integer from 1 to 4.

[0017] In one embodiment, the molybdenum compound may be selected from the following compounds: [ka]

[0018] The present invention provides a method for producing a molybdenum compound, and in one embodiment, the method for producing a molybdenum compound represented by Chemical Formula 1 below may include the steps of reacting a molybdenum compound represented by Chemical Formula 3 below with a ligand capable of coordinating with the molybdenum compound to produce an intermediate, and reacting the intermediate with a cyclopentadiene-based ligand represented by Chemical Formula 4 below to produce the molybdenum compound represented by Chemical Formula 1 below.

[0019] [ka]

[0020] [ka]

[0021] [ka] [In the above Chemical Formulas 1 and 4, L is C1-C10 alkylene or C3-C10 cycloalkylene, and the alkylene and cycloalkylene of L may be further substituted with C1-C10 alkyl; R1 to R5 are each independently hydrogen or C1-C7 alkyl; Y is -NR 11 R 12 , -OR 13 , or -SR 14 and R 11 ~R 14are, independently of each other, C1-C10 alkyl, haloC1-C10 alkyl, C3-C10 cycloalkyl, C6-C12 aryl, C6-C12 arylC1-C10 alkyl, or said R 11 and R 12 may be linked to form a ring.

[0022] The present invention provides a composition for depositing a molybdenum-containing thin film, which comprises a molybdenum compound according to one embodiment of the present invention.

[0023] The present invention also provides a method for producing a molybdenum-containing thin film, which comprises producing a thin film using the molybdenum-containing thin film deposition composition.

[0024] In one embodiment, the manufacturing method includes: a) raising the temperature of a substrate mounted in a chamber; b) injecting a reaction gas and the composition for depositing a molybdenum-containing thin film into the chamber to form a molybdenum-containing thin film.

[0025] In one embodiment, the reactive gas may be oxygen (O), ozone (O), distilled water (H), hydrogen peroxide (H), O, nitric oxide (NO), nitrous oxide (NO), nitrogen dioxide (NO), ammonia (NH), nitrogen (N), hydrazine (N), amine, diamine, carbon monoxide (CO), carbon dioxide (CO), C to C 12 The gas may be any one or more selected from saturated or unsaturated hydrocarbons, hydrogen (H2), argon (Ar), and helium (He).

[0026] In one embodiment, the manufacturing method includes: c) After step b), a step of injecting a reaction gas into the chamber may be further included, and steps b) and c) may be one cycle, which may be repeated.

[0027] The present invention provides a molybdenum-containing thin film having a molybdenum content of 70% or more. [Effects of the Invention]

[0028] The molybdenum compound according to the present invention has improved thermal stability, high volatility, and improved vapor pressure, and therefore exhibits a uniform and stable deposition rate, enabling the formation of a highly reliable thin film.

[0029] The method for producing a molybdenum compound according to the present invention can easily produce a molybdenum compound industrially in high yield and with high purity under mild conditions and through simple steps.

[0030] The method for fabricating a molybdenum-containing thin film according to the present invention can achieve high film uniformity and good doping control by atomic layer deposition (ALD) and chemical vapor deposition (CVD), etc. Furthermore, the method can provide uniform step coverage for three-dimensional semiconductor devices.

[0031] The molybdenum-containing thin film according to the present invention is deposited at a high deposition rate of 1.36 Å or more per cycle and has a molybdenum content of 70% or more. [Brief explanation of the drawings]

[0032] [Figure 1] 1 is a photograph showing the results of scanning electron microscope measurement of the molybdenum-containing thin film of Example 3. DETAILED DESCRIPTION OF THE INVENTION

[0033] The present invention provides a molybdenum compound, a method for producing the same, a molybdenum-containing thin film deposition composition containing the same, and a method for producing a thin film using the same.

[0034] As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly dictates otherwise.

[0035] "Comprising" as used herein is an open-ended term having the same meaning as terms such as "comprising," "containing," "having," or "characterized by," and does not exclude additional, unrecited elements, materials, or steps.

[0036] "Alkyl" according to the present invention may be either straight-chain or branched, and may have 1 to 10 carbon atoms, preferably 1 to 6 carbon atoms. In yet another embodiment, alkyl may have 1 to 4 carbon atoms.

[0037] The term "cycloalkyl" as used herein means a non-aromatic monocyclic or multicyclic ring system having 3 to 10 carbon atoms, which may be a 3- to 6-membered ring and may have an unsaturated bond within the ring.

[0038] According to the present invention, "alkylene" and "cycloalkylene" refer to a divalent organic radical derived from "alkyl" and "cycloalkyl" by removing one hydrogen, where alkyl and cycloalkyl are as defined above.

[0039] "Halo" as used herein means fluorine, chlorine, bromine, or iodine.

[0040] "Haloalkyl" according to the present invention refers to an alkyl group in which one or more hydrogen atoms are replaced with a halogen atom. For example, haloalkyl includes -CF, -CHF, -CHF, -CBr, -CHBr, -CHBr, -CCl, -CHCl, -CHCI, -CHI, -CHI, -CH-CF, -CH-CHF, -CH-CHF, -CH-CBr, -CH-CHBr, -CH-CHBr, -CH-CCl, -CH-CHCl, -CH-CHCI, -CH-CCI, -CH-CHI, -CH-CHI, and the like. Here, alkyl and halogen are as defined above.

[0041] "Alkoxy" according to the present invention means -O-(alkyl), including -OCH, -OCHCH, -O(CH)CH, -O(CH)CH, -O(CH)CH, -O(CH)CH, -O(CH)CH, and the like, where alkyl is as defined above.

[0042] The term "aryl" as used herein refers to a carbocyclic aromatic group containing 6 to 20 ring atoms. Representative examples include, but are not limited to, phenyl, tolyl, xylyl, naphthyl, tetrahydronaphthyl, anthracenyl, fluorenyl, indenyl, azulenyl, and the like.

[0043] The term "arylalkyl" as used herein refers to an alkyl group in which one or more hydrogen atoms are substituted with aryl, where aryl and alkyl are as defined above. For example, arylalkyl includes, but is not limited to, benzyl, phenethyl, phenylvinyl, etc.

[0044] The number of carbon atoms in alkyl, alkoxy, etc. described in the present invention does not include the number of carbon atoms in the substituents, and as an example, C1-C10 alkyl means an alkyl having 1 to 10 carbon atoms, not including the number of carbon atoms in the alkyl substituents.

[0045] "Substituted" according to the present invention means that a hydrogen atom of the substituted moiety (eg, alkyl, aryl, or cycloalkyl) is replaced with a substituent.

[0046] The present invention will now be described in detail. In this regard, unless otherwise defined, the technical and scientific terms used have the meanings that are commonly understood by those skilled in the art to which this invention pertains, and descriptions of well-known functions and configurations that may obscure the gist of the present invention will be omitted.

[0047] The present invention provides a molybdenum compound represented by the following Chemical Formula 1:

[0048] [ka] [In the above Chemical Formula 1, L is C1-C10 alkylene or C3-C10 cycloalkylene, and the alkylene and cycloalkylene of L may be further substituted with C1-C10 alkyl; R1 to R4 are each independently hydrogen or C1-C7 alkyl; R5 is hydrogen, C1-C10 alkyl, C6-C12 aryl, C6-C12 arylC1-C10 alkyl, or C1-C10 alkoxy; Y is -NR 11 R 12 , -OR 13 , or -SR 14 and R 11 ~R 14 are, independently of each other, C1-C10 alkyl, haloC1-C10 alkyl, C3-C10 cycloalkyl, C6-C12 aryl, C6-C12 arylC1-C10 alkyl, or said R 11 and R 12 may be linked to form a ring.

[0049] The molybdenum compound represented by Formula 1 according to the present invention exhibits excellent thermal stability, high volatility, and improved vapor pressure, and when used, it is possible to obtain a highly reliable molybdenum-containing thin film.

[0050] In one embodiment, in Formula 1, L may be C1-C6 alkylene, and the alkylene of L may be further substituted with C1-C6 alkyl; R1 to R4 may each independently be hydrogen or C1-C4 alkyl; and R5 may be hydrogen or C1-C6 alkyl.

[0051] Also, Y is -NR 11 R12 , -OR 13 , or -SR 14 wherein R 11 ~R 14 are, independently of each other, C1-C6 alkyl, haloC1-C6 alkyl, C3-C6 cycloalkyl, C6-C12 aryl, or C6-C12 arylC1-C6 alkyl, or 11 and R 12 may be linked by a C2-C6 alkylene to form an alicyclic ring.

[0052] The molybdenum compound according to a preferred embodiment may be represented by the following chemical formula 2:

[0053] [ka] [In the above Chemical Formula 2, R1 to R4 are each independently hydrogen or C1-C4 alkyl; R5 is hydrogen or C1-C4 alkyl; Y is -NR 11 R 12 , -OR 13 , or -SR 14 and R 11 ~R 14 are, independently of each other, C1-C4 alkyl, haloC1-C4 alkyl, or C3-C6 cycloalkyl, or 11 and R 12 may be linked by a C2-C6 alkylene to form an alicyclic ring; and m is an integer from 1 to 4.

[0054] A more preferred embodiment of the molybdenum compound may be represented by the following chemical formula 2-1.

[0055] [ka] [In the above chemical formula 2-1, R1 to R4 are each independently hydrogen or C1-C4 alkyl; R5 is hydrogen or C1-C4 alkyl; Y is -NR 11 R 12 , -OR 13 , or -SR 14 and R 11 ~R 14 are, independently of each other, C1-C4 alkyl or haloC1-C4 alkyl, or 11 and R 12 may be linked by a C2-C6 alkylene to form an alicyclic ring.

[0056] In one embodiment, the molybdenum compound may be selected from, but is not limited to, the following compounds: [ka]

[0057] The present invention provides a method for producing a molybdenum compound, and in one embodiment, the method for producing a molybdenum compound represented by Chemical Formula 1 below may include the steps of reacting a molybdenum compound represented by Chemical Formula 3 below with a ligand capable of coordinating with the molybdenum compound to produce an intermediate, and reacting the intermediate with a cyclopentadiene-based ligand represented by Chemical Formula 4 below to produce the molybdenum compound represented by Chemical Formula 1 below.

[0058] [ka]

[0059] [ka]

[0060] [ka] [In the above Chemical Formulas 1 and 4, L is C1-C10 alkylene or C3-C10 cycloalkylene, and the alkylene and cycloalkylene of L may be further substituted with C1-C10 alkyl; R1 to R5 are each independently hydrogen or C1-C7 alkyl; Y is -NR 11 R 12 , -OR 13 , or -SR 14 and R 11 ~R 14 are, independently of each other, C1-C10 alkyl, haloC1-C10 alkyl, C3-C10 cycloalkyl, C6-C12 aryl, C6-C12 arylC1-C10 alkyl, or said R 11 and R 12 may be linked to form a ring.

[0061] The method for producing a molybdenum compound according to one embodiment of the present invention is carried out under mild conditions and is a method that can be easily mass-produced through simple steps.

[0062] The ligand capable of coordinating with the molybdenum compound according to one embodiment of the present invention may be any ligand recognizable by those skilled in the art, and specifically may be a compound capable of coordinating in place of the three carbonyl groups in the molybdenum compound of Formula 3. More specifically, it may be a compound selected from 1,3,5-trimethylhexahydro-1,3,5-triazine (trimethyltriazacyclohexane) and acetonitrile.

[0063] The solvent used in the production method according to one embodiment may be any common organic solvent, but it is preferable to use one or more solvents selected from the group consisting of hexane, pentane, dichloromethane (DCM), dichloroethane (DCE), toluene, acetonitrile (MeCN), nitromethan, tetrahydrofuran (THF), N,N-dimethylformamide (DMF), and N,N-dimethylacetamide (DMA).

[0064] The reaction temperature can be a temperature used in ordinary organic synthesis, but may vary depending on the amounts of reactants and starting materials. Preferably, the reaction is carried out at 20°C to 200°C, specifically, 50°C to 150°C, and more specifically, 70°C to 120°C.

[0065] The reaction is terminated after complete consumption of the starting material is confirmed by NMR or the like, and the target product may then be separated and purified by conventional methods such as extraction, distillation of the solvent under reduced pressure, and column chromatography.

[0066] The cyclopentadiene-based ligand coordinated to the molybdenum compound according to one embodiment of the present invention stably coordinates to molybdenum through a resonance structure, significantly improving the thermal stability of the molybdenum compound. As a result, thin films made of molybdenum (Mo), molybdenum nitride (MoNx), or molybdenum oxide (MoOx) can be formed with high reliability using the molybdenum compound according to one embodiment of the present invention.

[0067] Furthermore, the cyclopentadiene-based ligand may be bonded to an aminoalkyl, an alkoxyalkyl, or an alkylsulfide, thereby improving the thermal stability of the molybdenum compound during the deposition process.

[0068] The present invention provides a composition for depositing a molybdenum-containing thin film, which comprises a molybdenum compound according to one embodiment of the present invention.

[0069] The present invention also provides a method for producing a molybdenum-containing thin film using the composition for depositing a molybdenum-containing thin film.

[0070] The deposition method for producing the molybdenum-containing thin film may be a conventional method used in the art, specifically, atomic layer deposition (ALD), chemical vapor deposition (CVD), metalorganic chemical vapor deposition (MOCVD), low-pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD), or plasma-enhanced atomic layer deposition (PEALD).

[0071] More preferably, the method for producing the molybdenum-containing thin film according to one embodiment may be atomic layer deposition (ALD), chemical vapor deposition (CVD), metalorganic chemical vapor deposition (MOCVD), or plasma-enhanced atomic layer deposition (PEALD).

[0072] The method for producing the molybdenum-containing thin film according to one embodiment of the present invention includes the steps of: a) raising the temperature of a substrate mounted in a chamber; b) injecting a reaction gas and the composition for depositing a molybdenum-containing thin film into the chamber to produce a molybdenum-containing thin film.

[0073] In an embodiment, deposition conditions may be adjusted depending on the desired structure or thermal properties of the thin film. Examples of deposition conditions according to an embodiment include the supply flow rate of the molybdenum-containing thin film deposition composition, the supply flow rates of the reaction gas and the transport gas, pressure, RF power, etc.

[0074] Non-limiting examples of the deposition conditions include an input flow rate of the molybdenum-containing thin film deposition composition of 1 to 1,000 sccm, a carrier gas flow rate of 1 to 5,000 sccm, a reaction gas flow rate of 10 to 5,000 sccm, a pressure of 0.1 to 10 torr, and an RF power of 10 to 1,000 W, but are not limited thereto.

[0075] In one embodiment, in step a), the substrate mounted in the chamber is heated to 200°C to 700°C, specifically, 500°C to 600°C, but is not limited thereto.

[0076] The substrate according to one embodiment may be, but is not limited to, a substrate including one or more semiconductor materials of Si, Ge, SiGe, GaP, GaAs, SiC, SiGeC, InAs, and InP, a silicon-on-insulator (SOI) substrate, a quartz substrate, a glass substrate for a display, or a flexible plastic substrate such as polyimide, polyethylene terephthalate (PET, PolyEthylene Terephthalate), polyethylene naphthalate (PEN, PolyEthylene Naphthalate), polymethyl methacrylate (PMMA, Poly Methyl Meth Acrylate), polycarbonate (PC, PolyCarbonate), polyethersulfone (PES), or polyester.

[0077] In one embodiment, the reactive gas may be, but is not limited to, oxygen (O), ozone (O), distilled water (H O), hydrogen peroxide (H O), nitric oxide (NO), nitrous oxide (N O), nitrogen dioxide (NO), ammonia (NH), nitrogen (N), hydrazine (N H), amines, diamines, carbon monoxide (CO), carbon dioxide (CO), C to C 12 The gas may be any one or a mixture of two or more selected from saturated or unsaturated hydrocarbons, hydrogen (H 2 ), argon (Ar), and helium (He).

[0078] Specifically, the reactive gas may be any one or more selected from oxygen (O), hydrogen peroxide (H), nitrous oxide (N), nitrogen (N), and hydrogen (H), and more specifically, may be hydrogen (H), but is not limited thereto.

[0079] In one embodiment, the transport gas in the depositing step is an inert gas, and may be any one or more selected from argon (Ar), helium (He), and nitrogen (N), specifically, but not limited to, nitrogen (N).

[0080] According to one embodiment, the method for producing a molybdenum-containing thin film comprises: c) After step b), a step of injecting a reaction gas into the chamber may be further included, and steps b) and c) may be one cycle, which may be repeated.

[0081] In one embodiment, after injecting the transfer gas and the molybdenum-containing thin film deposition composition into the chamber, a purging step may be performed to remove the molybdenum compound or composition thereof that is not adsorbed on the substrate using the transfer gas.

[0082] In one embodiment, after injecting the reaction gas into the chamber, a purging step may be performed to remove reaction by-products and residual reaction gas using the transfer gas.

[0083] In one embodiment, the steps of injecting the molybdenum-containing thin film deposition composition, purging, injecting the reaction gas, and purging constitute one cycle, which may be repeated.

[0084] A thin film fabricated by the molybdenum-containing thin film fabrication method according to one embodiment can exhibit a uniform and stable deposition rate and provide uniform step coverage for structures having a large aspect ratio.

[0085] The molybdenum-containing thin film according to the present invention has a molybdenum content of 70% or more, specifically 72% or more, and is produced at a high deposition rate of 1.36 Å per cycle. Therefore, the molybdenum-containing thin film according to the present invention can be useful as a dielectric film in various semiconductor fields.

[0086] Hereinafter, a method for producing a molybdenum compound and a method for producing a thin film using the same according to the present invention will be described in more detail with reference to specific examples. However, the following examples are merely a reference for explaining the present invention in detail, and the present invention is not limited thereto and can be realized in various forms. Furthermore, the terms used in the description of the present invention are merely for the purpose of effectively describing specific examples and are not intended to limit the present invention.

[0087] Also, unless otherwise noted, all examples were carried out under an inert atmosphere, e.g., purified nitrogen (N) or argon (Ar), using techniques commonly known in the art for handling air-sensitive materials.

[0088] Example 1: Preparation of ((CH)N(CHCp)MoH(CO) A reactor equipped with a reflux condenser was charged with 100 g (0.38 mol) of Mo(CO) and 300 mL of toluene and stirred. 128.7 g (1.0 mol) of 1,3,5-trimethylhexahydro-1,3,5-triazine (trimethyltriazacyclohexane, TMTACH) was slowly added to the reactor and stirred at 120°C for 10 hours or more. The reaction was continued until no further CO gas evolution was observed using an external oil bubbler. The temperature of the reactor was lowered to 100°C, and the mixture was filtered. The mixture was then washed three times with 50 mL of toluene and dried under vacuum to obtain 84 g of a yellow powder of (TMTACH)Mo(CO) (yield: 72%).

[0089] A reactor equipped with a reflux condenser was charged with 384 g (0.27 mol) of the (TMTACH)Mo(CO) obtained above and 200 mL of THF and stirred. 37 g (0.27 mol) of (2-dimethylaminoethyl)cyclopentadiene was slowly added to the reactor and stirred at 70 °C for at least 10 hours. After the yellow mixture had completely turned deep red, the solvent was evaporated under reduced pressure. The residue was extracted twice with 300 mL of hexane. The extracted deep red solution was evaporated under reduced pressure to obtain a deep red liquid. The resulting product was distilled at 92 °C and 0.3 Torr to obtain approximately 40 g of ((CH3)2N(CH2)2Cp)MoH(CO)3 (yield: 45% from Mo(CO)6). 1 H NMR(400 MHz, C6D6) δ 4.8 - 4.95 (d, 4H), 2.0 - 2.2 (m, 4H), 2.0 (s, 6H), 1.6-1.8 (m, 1H)

[0090] Example 2: Preparation of ((CH3)O(CH2)2Cp)MoH(CO)3 A reactor equipped with a reflux condenser was charged with 100 g (0.32 mol) of the (TMTACH)Mo(CO)3 obtained above and 200 mL of THF and stirred. 40.17 g (0.32 mol) of (2-methoxyethyl)cyclopentadiene was slowly added to the reactor and stirred at 70°C for at least 10 hours. After the yellow mixture had completely turned deep red, the solvent was evaporated under reduced pressure. The residue was extracted twice with 300 mL of hexane. The extracted deep red solution was evaporated under reduced pressure to obtain a deep red liquid. The resulting product was distilled at 85°C and 0.25 Torr to obtain approximately 45 g of ((CH3)O(CH2)2Cp)MoH(CO)3 (yield: 34.6% from Mo(CO)6). 1 H NMR(400 MHz, C6D6) δ 4.8 - 4.95 (d, 4H), 3.10 (m, 2H), 3.01 (s, 3H), 2.34 (m, 2H), 1.6-1.8 (m, 1H)

[0091] [Example 3] Production of a molybdenum-containing thin film Using the molybdenum compound according to Example 1, a molybdenum-containing thin film was manufactured by atomic layer deposition using hydrogen (H 2 ) as a reactive gas.

[0092] While a substrate having a silicon oxide film and a titanium nitride film formed thereon was maintained at 580° C., the molybdenum compound according to Example 1, filled in a stainless steel bubbler container at 100° C., was transferred for 1 second along with 50 sccm of nitrogen (N2) to adsorb onto the substrate. Then, a purge step was performed using 2000 sccm of nitrogen (N2) for 3 seconds to remove any unadsorbed molybdenum compound.

[0093] Next, 2000 sccm of hydrogen (H2) was supplied for 5 seconds to react with the adsorbed molybdenum compound, forming a molybdenum-containing thin film, followed by a 3-second purge step using 2000 sccm of nitrogen (N2) to remove reaction by-products and residual reaction gases.

[0094] The above process was counted as one cycle, and the molybdenum-containing thin film was formed by repeating 500 cycles.

[0095] The thickness of the formed molybdenum-containing thin film was measured using a scanning electron microscope, and the results are shown in Figure 1. The thickness of the molybdenum-containing thin film was 680 Å, and the deposition rate was confirmed to be 1.36 Å per period.

[0096] Furthermore, X-ray photoelectron analysis confirmed that the film contained approximately 72% molybdenum.

[0097] From this, the molybdenum compound according to one embodiment of the present invention has improved thermal stability, high volatility, and improved vapor pressure, and when used to produce a thin film, it exhibits a uniform and stable deposition rate, making it possible to produce a thin film with excellent deposition properties.

[0098] As described above, the present invention has been described using specific and limited examples and comparative examples. However, these are merely provided for a more general understanding of the present invention, and the present invention is not limited to the above examples. Those skilled in the art will appreciate that various modifications and variations can be made based on these descriptions.

[0099] Therefore, the spirit of the present invention should not be limited to the above-described embodiments, and it can be said that not only the scope of the attached claims, but also anything equivalent to the scope of the claims or any equivalent modifications thereof, all fall within the scope of the spirit of the present invention.

Claims

1. A molybdenum compound represented by the following chemical formula 1. 【Chemical 1】 [In the above Chemical Formula 1, L is C1-C10 alkylene or C3-C10 cycloalkylene, and the alkylene and cycloalkylene of L may be further substituted with C1-C10 alkyl; R １ ~R ４ are each independently hydrogen or C1-C7 alkyl; R ５ is hydrogen, C1-C10 alkyl, C6-C12 aryl, C6-C12 arylC1-C10 alkyl, or C1-C10 alkoxy; Y is -NR １１ R １２ , -OR １３ , or -SR １４ and R １１ ~R １４ are each independently C1-C10 alkyl, haloC1-C10 alkyl, C3-C10 cycloalkyl, C6-C12 aryl, C6-C12 arylC1-C10 alkyl, or the R １１ and R １２ may be linked to form a ring.

2. L is C1-C6 alkylene, and the alkylene of L may be further substituted with C1-C6 alkyl; R １ ~R ４ are each independently hydrogen or C1-C4 alkyl, R ５ is hydrogen or C1-C6 alkyl, Y is -NR １１ R １２ , -OR １３ , or -SR １４ and R １１ ~R １４ are each independently C1-C6 alkyl, haloC1-C6 alkyl, C3-C6 cycloalkyl, C6-C12 aryl, or C6-C12 arylC1-C6 alkyl, or １１ and R １２ may be linked by a C2-C6 alkylene to form a ring.

3. 2. The molybdenum compound according to claim 1, which is represented by the following chemical formula 2: 【Chemistry 2】 [In the above chemical formula 2, R １ ~R ４ are each independently hydrogen or C1-C4 alkyl, R ５ is hydrogen or C1-C4 alkyl, Y is -NR １１ R １２ , -OR １３ , or -SR １４ and R １１ ~R １４ are each independently C1-C4 alkyl, haloC1-C4 alkyl, or C3-C6 cycloalkyl, or １１ and R １２ may be linked by a C2-C6 alkylene to form an alicyclic ring; m is an integer from 1 to 4.

4. 2. The molybdenum compound of claim 1, which is selected from the following compounds: 【Chemistry 3】

5. a) reacting a molybdenum compound represented by the following chemical formula 3 with a ligand capable of coordinating with the molybdenum compound to prepare an intermediate; b) reacting the intermediate with a cyclopentadiene-based ligand represented by the following Chemical Formula 4 to prepare a molybdenum compound represented by the following Chemical Formula 1: A method for producing a molybdenum compound of the following formula 1, comprising: 【Chemistry 4】 【Chemistry 5】 【Chemistry 6】 [In the above Chemical Formulas 1 and 4, L is C1-C10 alkylene or C3-C10 cycloalkylene, and the alkylene and cycloalkylene of L may be further substituted with C1-C10 alkyl; R １ ~R ５ are each independently hydrogen or C1-C7 alkyl; Y is -NR １１ R １２ , -OR １３ , or -SR １４ and R １１ ~R １４ are each independently C1-C10 alkyl, haloC1-C10 alkyl, C3-C10 cycloalkyl, C6-C12 aryl, C6-C12 arylC1-C10 alkyl, or the R １１ and R １２ may be linked to form a ring.

6. A composition for vapor deposition of a molybdenum-containing thin film, comprising the molybdenum compound according to claim 1 .

7. A method for producing a molybdenum-containing thin film using the molybdenum-containing thin film deposition composition according to claim 6.

8. a) raising the temperature of a substrate mounted in a chamber; b) injecting a reaction gas and the molybdenum-containing thin film deposition composition into the chamber to produce a molybdenum-containing thin film.

9. The reactive gas is oxygen (O ２ ), ozone (O ３ ), distilled water (H ２ O), hydrogen peroxide (H ２ O ２ ), nitric oxide (NO), nitrous oxide (N ２ O), nitrogen dioxide (NO ２ ), ammonia (NH ３ ), nitrogen (N ２ ), hydrazine (N ２ H ４ ), amines, diamines, carbon monoxide (CO), carbon dioxide (CO ２ ), C １ ~C １２ saturated or unsaturated hydrocarbons, hydrogen (H ２ 9. The method for producing a molybdenum-containing thin film according to claim 8, wherein the gas is any one or more selected from the group consisting of argon (Ar) and helium (He).

10. The method for producing a molybdenum-containing thin film according to claim 8, further comprising the step of: c) injecting a reaction gas into the chamber after step b).

11. The method for producing a molybdenum-containing thin film according to claim 10 , wherein the steps b) and c) constitute one cycle, and the cycle is repeated.

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