Semiconductor device, heat sink, and method of manufacturing the semiconductor device

Abstract

To provide a semiconductor device that efficiently cools semiconductor elements.SOLUTION: A semiconductor device comprises a semiconductor package, a heat dissipation member, and a heat sink provided between the semiconductor package and the heat dissipation member, the heat sink has a first groove formed on the top surface, a second groove formed on the bottom surface, a through hole connecting the first and second grooves, and first and second apertures formed on the end faces, and the first groove, the second groove, and the through hole form a flow path from the first aperture to the second aperture and are filled with a thermally conductive material.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor device, a heat sink, and a method for manufacturing a semiconductor device. [Background technology]

[0002] Power conversion devices using power semiconductor elements, such as IGBTs (Insulated Gate Bipolar Transistors), have come into use in recent years, and there is a demand for efficient cooling of these power semiconductor elements.

[0003] Patent Document 1 describes an assembly structure for a power module in which a heat sink attached to the power module is assembled to a heat sink case via grease.

[0004] Patent Document 2 discloses a power conversion device including: electrical components mounted on a circuit board; a heat sink integrally formed with a component mounting portion on which the electrical components are mounted and a heat dissipation portion that dissipates heat generated by the electrical components; a box-shaped housing that houses the heat sink and the electrical components; and a sealing member interposed between the heat sink and the housing. The housing is also made of a separate material from the heat sink. The document discloses that the heat sink is attached to the housing with the heat dissipation portion exposed to the outside through an opening formed in the housing.

[0005] Patent Document 3 discloses a switching device for the U, V, and W phases of a power conversion device. It also discloses that the respective connection ends of the first collector terminal and the second emitter terminal of the switching device are arranged on a first imaginary straight line.

[0006] Patent Document 4 discloses a power conversion device in which a plurality of electronic components constituting a power conversion circuit and a cooler for cooling at least some of the electronic components are housed in a case. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2005-101259 [Patent Document 2] Japanese Patent Application Publication No. 2018-191388 [Patent Document 3] Japanese Patent Application Laid-Open No. 2016-015863 [Patent Document 4] Japanese Patent Application Laid-Open No. 2011-182628 Summary of the Invention [Problem to be solved by the invention]

[0008] In order to efficiently cool the semiconductor element, it is necessary to bond the insulating substrate on which the semiconductor element is mounted to the heat dissipation member in a state in which heat transfer efficiency is high.

[0009] An object of the present disclosure is to provide a semiconductor device that efficiently cools a semiconductor element. [Means for solving the problem]

[0010] According to one aspect of the present disclosure, there is provided a semiconductor device comprising a semiconductor package, a heat dissipation member, and a heat dissipation plate disposed between the semiconductor package and the heat dissipation member, the heat dissipation plate having a groove on at least one of its upper and lower surfaces and a first opening and a second opening formed on an end surface, the groove forming a flow path from the first opening to the second opening and filled with a thermally conductive material. [Effects of the Invention]

[0011] According to each embodiment of the present disclosure, a semiconductor device that efficiently cools a semiconductor element can be provided. [Brief explanation of the drawings]

[0012] [Figure 1] FIG. 1 is a perspective view of a semiconductor device according to a first embodiment. [Figure 2] FIG. 2 is an exploded perspective view of the semiconductor device of the first embodiment. [Figure 3] FIG. 3 is a side view of the semiconductor device of the first embodiment. [Figure 4] FIG. 4 is a bottom view of the heat sink of the semiconductor device of the first embodiment. [Figure 5] FIG. 5 is a top view of the heat sink of the semiconductor device of the first embodiment. [Figure 6] FIG. 6 is a perspective view of a heat sink of the semiconductor device according to the second embodiment. [Figure 7] FIG. 7 is a side view of the semiconductor device according to the second embodiment. [Figure 8] FIG. 8 is a bottom view of the heat sink of the semiconductor device of the second embodiment. [Figure 9] FIG. 9 is a top view of a heat sink of the semiconductor device according to the second embodiment. [Figure 10] FIG. 10 is a perspective view of a heat sink of the semiconductor device of the third embodiment. [Figure 11] FIG. 11 is an exploded perspective view of a heat sink of the semiconductor device of the third embodiment. [Figure 12] FIG. 12 is a side view of the semiconductor device of the third embodiment. [Figure 13] FIG. 13 is a top view of a plate-like member that constitutes a heat sink of a semiconductor device according to the third embodiment. [Figure 14] FIG. 14 is a top view of a plate-like member that constitutes a heat sink of a semiconductor device according to the third embodiment. [Figure 15] FIG. 15 is a bottom view of the heat sink of the semiconductor device of the third embodiment. [Figure 16] FIG. 16 is a top view of a heat sink of the semiconductor device of the third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0013] Hereinafter, each embodiment of the present invention will be described with reference to the accompanying drawings. Note that in the description of each embodiment and in the drawings, components having substantially the same or corresponding functional configurations may be designated by the same reference numerals, and redundant description may be omitted. For ease of understanding, the scale of each part in the drawings may differ from the actual scale. Directions such as parallel, right-angled, orthogonal, horizontal, vertical, up / down, left / right, etc., are permitted to a degree that does not impair the effects of the embodiments. The shape of corners is not limited to right angles and may be rounded like an arch. Parallel, right-angled, orthogonal, horizontal, and vertical may include approximately parallel, approximately right-angled, approximately orthogonal, approximately horizontal, and approximately vertical.

[0014] <<First Embodiment>> <Semiconductor device 1> <Configuration of Semiconductor Device 1> Fig. 1 is a perspective view of the semiconductor device 1 of the first embodiment. Fig. 2 is an exploded perspective view of the semiconductor device 1 of the first embodiment. Fig. 3 is a side view of the semiconductor device 1 of the first embodiment.

[0015] For ease of explanation, an XYZ Cartesian coordinate system may be used in the figures. For coordinate axes perpendicular to the plane of the drawing, a cross in a circle indicates that the direction toward the back of the plane is positive, and a black circle in a circle indicates that the direction toward the front of the plane is positive. However, this coordinate system is defined for the purpose of explanation only and does not limit the orientation of the semiconductor device, etc. In this disclosure, unless otherwise specified, the X axis is defined as a direction parallel to the mounting surface of the heat dissipation member 20, and the Y axis is defined as a direction parallel to the mounting surface of the heat dissipation member 20 and perpendicular to the X axis. The Z axis is defined as a direction perpendicular to the X axis and Y axis. The Z axis direction may also be referred to as the up-down direction. For example, the +Z side may be referred to as the top, and the -Z side may be referred to as the bottom. A plan view viewed from the +Z side may also be referred to as a top view, and a plan view viewed from the -Z side may also be referred to as a bottom view.

[0016] The semiconductor device 1 includes a semiconductor package 10, a heat dissipation member 20, and a heat dissipation plate 30. Each of the components will be described below.

[0017] [Semiconductor Package 10] The semiconductor package 10 is a package in which a semiconductor element such as a power semiconductor is sealed with resin. The semiconductor package 10 is connected to a heat dissipation member 20 via a heat sink 30 in order to dissipate heat generated by the internal semiconductor element.

[0018] [Heat dissipation member 20] The heat dissipation member 20 is a member that dissipates heat from the semiconductor package 10 to the outside. The heat dissipation member 20 is, for example, a heat dissipation plate made of metal or a liquid-cooled cooler through which a coolant flows. The semiconductor package 10 is connected to the heat dissipation member 20 via the heat dissipation plate 30. The heat dissipation member 20 dissipates heat from the semiconductor package 10 by being connected to the semiconductor package 10 via the heat dissipation plate 30. By using, for example, a heat dissipation plate made of metal as the heat dissipation member 20, the heat dissipation member 20 transfers heat from the mounting surface to the surface opposite the mounting surface. By making the heat dissipation member 20 larger than the semiconductor package 10, the heat dissipation area can be increased, improving heat dissipation efficiency and the efficiency of cooling the semiconductor package 10. Furthermore, by using, for example, a liquid-cooled cooler as the heat dissipation member 20, the efficiency of cooling the semiconductor package 10 can be improved by the liquid (e.g., water, brine, antifreeze, coolant, etc.) that flows through the liquid-cooled cooler.

[0019] [Heat sink 30] The heat sink 30 is a member interposed between the semiconductor package 10 and the heat dissipation member 20. Fig. 4 is a bottom view of the heat sink 30 of the semiconductor device 1 of the first embodiment. Fig. 5 is a top view of the heat sink 30 of the semiconductor device 1 of the first embodiment. The heat sink 30 is a plate-shaped member.

[0020] The heat sink 30 is made of a material with high thermal conductivity. For example, the heat sink 30 is made of a metal such as copper or aluminum, or a resin. The heat sink 30 is created using, for example, a three-dimensional modeling device, a so-called three-dimensional printer.

[0021] The heat sink 30 has grooves 31a1, 31a2, 31a3, and 31a4 on its lower surface 30S1, extending in the X-axis direction and formed at equal intervals in the Y-axis direction. The heat sink 30 has grooves 31b1, 31b2, 31b3, and 31b4 on its upper surface 30S2, extending in the X-axis direction and formed at equal intervals in the Y-axis direction. Groove 31b1 is formed between grooves 31a1 and 31a2 in a top view. Similarly, groove 31b2 is formed between grooves 31a2 and 31a3 in a top view. Groove 31b3 is formed between grooves 31a3 and 31a4 in a top view. Groove 31b4 is formed on the +Y side of groove 31a4 in a top view.

[0022] The heat sink 30 also has through holes 31c1, 31c2, 31c3, 31c4, 31c5, 31c6, and 31c7 that penetrate between the upper surface 30S2 and the lower surface 30S1 of the heat sink 30. Each of the through holes 31c1, 31c2, 31c3, 31c4, 31c5, 31c6, and 31c7 is formed at an incline when viewed from the side in the X-axis direction. In other words, each of the through holes 31c1, 31c2, 31c3, 31c4, 31c5, 31c6, and 31c7 is formed at an incline with respect to the upper surface 30S2 or the lower surface 30S1 of the heat sink 30.

[0023] Groove 31a1 is formed from opening 30a to through hole 31c1 formed in end surface 30S on the +X side of heat sink 30. Groove 31b1 is formed from through hole 31c1 to through hole 31c2. Groove 31a2 is formed from through hole 31c2 to through hole 31c3. Groove 31b2 is formed from through hole 31c3 to through hole 31c4. Groove 31a3 is formed from through hole 31c4 to through hole 31c5. Groove 31b3 is formed from through hole 31c5 to through hole 31c6. Groove 31a4 is formed from through hole 31c6 to through hole 31c7. Groove 31b4 is formed from through hole 31c7 to opening 30b formed in end surface 30S on the +X side of heat sink 30.

[0024] Through hole 31c1 is formed between the -X side ends of groove 31a1 and groove 31b1. Through hole 31c2 is formed between the +X side ends of groove 31b1 and groove 31a2. Through hole 31c3 is formed between the -X side ends of groove 31a2 and groove 31b2. Through hole 31c4 is formed between the +X side ends of groove 31b2 and groove 31a3. Through hole 31c5 is formed between the -X side ends of groove 31a3 and groove 31b3. Through hole 31c6 is formed between the +X side ends of groove 31b3 and groove 31a4. Through hole 31c7 is formed between the -X side ends of groove 31a4 and groove 31b4.

[0025] In the semiconductor device 1, by sandwiching the heat sink 30 between the semiconductor package 10 and the heat dissipation member 20, a flow path can be formed through which liquid grease (thermally conductive material) passes from the opening 30a through the groove 31a1, through-hole 31c1, groove 31b1, etc. to the opening 30b.

[0026] The groove dimensions should preferably be 150 μm or more in width and 50 μm in depth. If the groove is narrower than 150 μm or shallower than 50 μm, the filler contained in the grease (thermal conductive material) may become clogged.

[0027] <Assembly of semiconductor device 1> The assembly (manufacturing method) of the semiconductor device 1 will be described. First, the semiconductor package 10 is placed on the heat dissipation member 20 via the heat dissipation plate 30. In other words, the semiconductor package 10, the heat dissipation plate 30, and the heat dissipation member 20 are stacked in this order (stacking step). Then, grease (thermally conductive material) is injected through the opening 30a formed on the +X side end face of the heat dissipation plate 30. The injected grease (thermally conductive material) flows sequentially through the groove 31a1, the through hole 31c1, and the groove 31b1, and finally passes through the groove 31b4 and is discharged from the opening 30b (filling step). By confirming that the grease (thermally conductive material) is injected through the opening 30b and discharged from the opening 30b, the grease (thermally conductive material) can be filled into the inside of the groove.

[0028] The opening 30a is an example of a first opening, and the opening 30b is an example of a second opening.

[0029] <Effects and Actions> The grease (thermally conductive material) passes through a single path from opening 30a and is discharged from opening 30b, allowing the grease (thermally conductive material) to be injected without excess or deficiency. Furthermore, the grease (thermally conductive material) passes through a single path from opening 30a and is discharged from opening 30b, thereby suppressing the occurrence of voids. Therefore, the semiconductor device 1 of this embodiment can efficiently cool the semiconductor element.

[0030] The opening for injecting the grease (thermal conductive material) is not limited to opening 30a, and opening 30b may be used. The positions of openings 30a and 30b are also not limited to end surface 30S, and openings 30a and 30b may be formed on other end surfaces of heat sink 30. Openings 30a and 30b may be formed on other end surfaces of heat sink 230.

[0031] <<Second embodiment>> <Semiconductor device 101> <Configuration of semiconductor device 101> A semiconductor device 101 according to the second embodiment will be described. The semiconductor device 101 according to the second embodiment is different from the semiconductor device 1 in the shape of the grooves in the heat dissipation member.

[0032] Fig. 6 is a perspective view of the heat sink 130 of the semiconductor device 101 of the second embodiment. Fig. 7 is a side view of the semiconductor device 101 of the second embodiment. Fig. 8 is a bottom view of the heat sink 130 of the semiconductor device 101 of the second embodiment. Fig. 9 is a top view of the heat sink 130 of the semiconductor device 101 of the second embodiment.

[0033] The semiconductor device 101 includes a semiconductor package 10, a heat dissipation member 20, and a heat dissipation plate 130. The heat dissipation plate 130 will now be described.

[0034] [Heat sink 130] The heat sink 130 is a member interposed between the semiconductor package 10 and the heat dissipation member 20 .

[0035] The heat sink 130 is made of a material with high thermal conductivity. For example, the heat sink 130 is made of a metal such as copper or aluminum, or a resin. The heat sink 130 is created, for example, using a three-dimensional modeling device, a so-called three-dimensional printer. The heat sink 130 is also created, for example, by forming grooves in the surface of a flat plate-shaped member by machining.

[0036] The heat sink 130 has a groove 131a on its lower surface 130S1. The groove 131a is formed by folding back at the end in the X-axis direction between an opening 130a1 formed in an end surface 130S on the +X side of the heat sink 130 and an opening 130b1 formed in the end surface 130S on the +X side of the heat sink 130.

[0037] The heat sink 130 has a groove 131b on the upper surface 130S2. The groove 131b is formed by folding back at the end in the X-axis direction between an opening 130a2 formed in the end surface 130S on the +X side of the heat sink 130 and an opening 130b2 formed in the end surface 130S on the +X side of the heat sink 130.

[0038] In the semiconductor device 101, by sandwiching the heat sink 130 between the semiconductor package 10 and the heat dissipation member 20, a flow path can be formed through which the grease (thermally conductive material) passes from the opening 130a1 through the groove 131a to the opening 130b1. Also, by sandwiching the heat sink 130 between the semiconductor package 10 and the heat dissipation member 20, a flow path can be formed through which the grease (thermally conductive material) passes from the opening 130a2 through the groove 131b to the opening 130b2.

[0039] <Assembly of the semiconductor device 101> The assembly of the semiconductor device 101 will be described. First, the semiconductor package 10 is placed on the heat dissipation member 20 via the heat dissipation plate 130. In other words, the semiconductor package 10, the heat dissipation plate 130, and the heat dissipation member 20 are stacked in this order (stacking step). Then, grease (thermally conductive material) is poured through an opening 130a1 formed in an end surface 130S on the +X side of the heat dissipation plate 130. The poured grease (thermally conductive material) flows through the groove 131a and is finally discharged from the opening 130b1. Furthermore, the grease (thermally conductive material) is poured through an opening 130a2 formed in the end surface 130S on the +X side of the heat dissipation plate 130. The poured grease (thermally conductive material) flows through the groove 131b and is finally discharged from the opening 130b2 (filling step). By checking that the grease (thermal conductive material) is injected through the opening 130a1 or the opening 130a2 and discharged through the opening 130b1 or the opening 130b2, the grease (thermal conductive material) can be filled into the inside of the groove.

[0040] The opening 130a1 is an example of a first opening, the opening 130b1 is an example of a second opening, the opening 130a2 is an example of a first opening, and the opening 130b2 is an example of a second opening.

[0041] <Effects and Actions> Grease (thermally conductive material) passes through a single path from opening 130a1 and is discharged from opening 130b1, thereby allowing the grease (thermally conductive material) to be injected without excess or deficiency. Furthermore, the grease (thermally conductive material) passes through a single path from opening 130a1 and is discharged from opening 130b1, thereby preventing the occurrence of voids. Similarly, the grease (thermally conductive material) passes through a single path from opening 130a2 and is discharged from opening 130b2, thereby allowing the grease (thermally conductive material) to be injected without excess or deficiency. Furthermore, the grease (thermally conductive material) passes through a single path from opening 130a2 and is discharged from opening 130b2, thereby preventing the occurrence of voids. Therefore, the semiconductor device 1 of this embodiment can efficiently cool semiconductor elements.

[0042] Furthermore, by providing independent grooves on both sides of the heat sink 130, the area over which the grease (thermally conductive material) filled in the grooves comes into contact with the semiconductor package 10 or the heat dissipation member 20 can be increased.

[0043] In the heat sink 130 of the second embodiment, the grooves are not limited to being provided on both the upper surface 130S2 and the lower surface 130S1. For example, the groove 131a may be provided on one surface (e.g., the lower surface 130S1) and no groove may be provided on the other surface (e.g., the upper surface 130S2). Similarly, the groove 131b may be provided on one surface (e.g., the upper surface 130S2) and no groove may be provided on the other surface (e.g., the lower surface 130S1).

[0044] The opening for injecting the grease (thermal conductive material) is not limited to opening 130a1 or opening 130a2, and opening 130b1 or opening 130b2 may be used. The positions of openings 130a1, 130a2, 130b1, and 130b2 are also not limited to end surface 130S, and openings 130a1, 130a2, 130b1, and 130b2 may be formed on other end surfaces of heat sink 130. Openings 130a1, 130a2, 130b1, and 130b2 may be formed on other end surfaces of heat sink 130.

[0045] <<Third Embodiment>> <Semiconductor device 201> <Configuration of semiconductor device 201> A semiconductor device 201 according to the third embodiment will be described. The semiconductor device 201 according to the third embodiment differs from the semiconductor device 1 in the shape of the grooves in the heat dissipation member. The configuration of the heat dissipation member is also different.

[0046] FIG. 10 is a perspective view of the heat sink 230 of the semiconductor device 201 of the third embodiment. FIG. 11 is an exploded perspective view of the heat sink 230 of the semiconductor device 201 of the third embodiment. FIG. 12 is a side view of the semiconductor device 201 of the third embodiment. FIG. 13 is a top view of a plate-shaped member 230A constituting the heat sink 230 of the semiconductor device 201 of the third embodiment. FIG. 14 is a top view of a plate-shaped member 230B constituting the heat sink 230 of the semiconductor device 201 of the third embodiment. FIG. 15 is a bottom view of the heat sink 230 of the semiconductor device 201 of the third embodiment. FIG. 16 is a top view of the heat sink 230 of the semiconductor device 201 of the third embodiment.

[0047] The semiconductor device 201 includes a semiconductor package 10, a heat dissipation member 20, and a heat dissipation plate 230. The heat dissipation plate 230 will be described.

[0048] [Heat sink 230] The heat sink 230 is a member interposed between the semiconductor package 10 and the heat dissipation member 20 .

[0049] The heat sink 230 is made of a material with high thermal conductivity. For example, the heat sink 230 is made of a metal such as copper or aluminum, or a resin. The heat sink 230 is created, for example, using a three-dimensional modeling device, a so-called three-dimensional printer. The heat sink 230 is also created, for example, by machining a flat plate-shaped member to form grooves that penetrate the flat plate-shaped member.

[0050] The heat dissipation plate 230 is made up of two plate-shaped members, plate member 230A and plate member 230B. The heat dissipation plate 230 is made up of plate member 230A and plate member 230B stacked together.

[0051] Plate-like member 230A has through grooves 232a1, 232a2, 232a3, 232a4, 232a5, and 232a6 that penetrate from the upper surface to the lower surface. Each of through grooves 232a1, 232a2, 232a3, 232a4, 232a5, and 232a6 extends in the X-axis direction and has an L-shape that extends in the +Y direction at its -X side end.

[0052] Plate-like member 230B has through grooves 232b1, 232b2, 232b3, 232b4, 232b5, and 232b6 that penetrate from the upper surface to the lower surface. Each of through grooves 232b1, 232b2, 232b3, 232b4, 232b5, and 232b6 extends in the X-axis direction and has an L-shape that extends in the +Y direction at the +X side end.

[0053] Plate-shaped member 230B is attached to the +Z side of plate-shaped member 230A in an overlapping manner. In heat dissipation plate 230, which is formed by overlapping plate-shaped member 230A and plate-shaped member 230B, through groove 232b1 is located between through groove 232a1 and through groove 232a2. Therefore, in heat dissipation plate 230, groove 231a1 that opens in the -Z direction is formed in the portion of through groove 232a1. That is, groove 231a1 is formed in lower surface 230S1 of heat dissipation plate 230. Furthermore, groove 231b1 that opens in the +Z direction is formed in the portion of through groove 232b1. Groove 231a1 and groove 231b1 are connected by opening 231c1, which is the portion where through groove 232a1 and through groove 232b1 overlap in a plan view. Through groove 232a1 is formed up to end face 230S on the +X side of heat dissipation plate 230. Therefore, the groove 231a1 has an opening 230a on the end surface 230S of the heat sink 230 on the +X side.

[0054] Similarly, through groove 232a2, through groove 232a3, through groove 232a4, through groove 232a5, and through groove 232a6 become groove 231a2, groove 231a3, groove 231a4, groove 231a5, and groove 231a6, respectively, that are open in the -Z direction. Furthermore, through groove 232b2, through groove 232b3, through groove 232b4, through groove 232b5, and through groove 232b6 become groove 231b2, groove 231b3, groove 231b4, groove 231b5, and groove 231b6, respectively, that are open in the +Z direction.

[0055] Groove 231b1 and groove 231a2 are connected by opening 231c2, which is the overlapping portion of through groove 232b1 and through groove 232a2 in a plan view. Similarly, groove 231a2 and groove 231b2 are connected by opening 231c3, which is the overlapping portion of through groove 232a2 and through groove 232b2 in a plan view. Groove 231b2 and groove 231a3 are connected by opening 231c4, which is the overlapping portion of through groove 232b2 and through groove 232a3 in a plan view. Groove 231a3 and groove 231b3 are connected by opening 231c5, which is the overlapping portion of through groove 232a3 and through groove 232b3 in a plan view. Groove 231b3 and groove 231a4 are connected by opening 231c6, which is the overlapping portion of through groove 232b3 and through groove 232a4 in a plan view. Groove 231a4 and groove 231b4 are connected by opening 231c7, which is the overlapping portion of through groove 232a4 and through groove 232b4 in a plan view. Groove 231b4 and groove 231a5 are connected by opening 231c8, which is the overlapping portion of through groove 232b4 and through groove 232a5 in a plan view. Groove 231a5 and groove 231b5 are connected by opening 231c9, which is the overlapping portion of through groove 232a5 and through groove 232b5 in a plan view. Groove 231b5 and groove 231a6 are connected by opening 231c10, which is the portion where through groove 232b5 and through groove 232a6 overlap in a plan view. Groove 231a6 and groove 231b6 are connected by opening 231c11, which is the portion where through groove 232a6 and through groove 232b6 overlap in a plan view.

[0056] The through groove 232b6 is formed up to the end surface 230S on the +X side of the heat dissipation plate 230. Therefore, the groove 231b6 has an opening 230b at the end surface 230S of the heat dissipation plate 230 on the +X side.

[0057] <Assembly of the semiconductor device 201> The assembly of the semiconductor device 201 will be described. First, the semiconductor package 10 is placed on the heat dissipation member 20 via the heat dissipation plate 230. In other words, the semiconductor package 10, the heat dissipation plate 230, and the heat dissipation member 20 are stacked in this order (stacking step). Then, grease (thermally conductive material) is injected through the opening 230a formed in the end surface 230S on the +X side of the heat dissipation plate 230. The injected grease (thermally conductive material) flows through the groove 231a1 and is finally discharged from the opening 230b (filling step). By confirming that the grease (thermally conductive material) is injected through the opening 230a and discharged from the opening 230b, the grease (thermally conductive material) can be filled into the inside of the groove.

[0058] The opening 230a is an example of a first opening, and the opening 230b is an example of a second opening.

[0059] <Effects and Actions> The grease (thermal conductive material) passes through a single path from opening 230a and is discharged from opening 230b, so that the grease (thermal conductive material) can be injected without excess or deficiency. Also, the grease (thermal conductive material) passes through a single path from opening 230a and is discharged from opening 230b, so that the occurrence of voids can be suppressed.

[0060] Furthermore, by combining plate-like member 230A and plate-like member 230B to form heat dissipation plate 230, the heat dissipation member can be easily manufactured.

[0061] The opening for injecting the grease (thermal conductive material) is not limited to opening 230a, and opening 230b may be used. The positions of opening 230a and opening 230b are also not limited to end surface 230S, and openings 230a and 230b may be formed on other end surfaces of heat sink 230. Openings 230a and 230b may be formed on other end surfaces of heat sink 230.

[0062] It should be noted that the embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0063] 1, 101, 201 Semiconductor device 10 Semiconductor Package 20 Heat dissipation material 30, 130, 230 heat sink 30S1, 130S1, 230S1 bottom side 30S2, 130S2, 230S2 top surface 31a1, 31a2, 31a3, 31a4 groove 31b1, 31b2, 31b3, 31b4 groove 131a, 131b groove 231a1, 231a2, 231a3, 231a4, 231a5, 231a6 groove 231b1, 231b2, 231b3, 231b4, 231b5, 231b6 groove

Claims

1. a semiconductor package; a heat dissipation member; and a heat dissipation plate provided between the semiconductor package and the heat dissipation member; the heat sink includes a first groove formed on an upper surface, a second groove formed on a lower surface, a through hole connecting the first groove and the second groove, and a first opening and a second opening formed on an end surface; the first groove, the second groove, and the through hole form a flow path from the first opening to the second opening, and are filled with a thermally conductive material; Semiconductor device.

2. Each of the first groove and the second groove has a width of 150 μm or more and a depth of 50 μm or more. The semiconductor device according to claim 1 .

3. A heat sink provided between a semiconductor package and a heat dissipation member of a semiconductor device, the heat sink comprising: a first groove formed on an upper surface, a second groove formed on a lower surface, a through hole connecting the first groove and the second groove, and a first opening and a second opening formed on an end surface, the first groove, the second groove, and the through hole form a flow path from the first opening to the second opening, and are filled with a thermally conductive material; Heat sink.

4. Each of the first groove and the second groove has a width of 150 μm or more and a depth of 50 μm or more. The heat sink according to claim 3 .

5. A method for manufacturing a semiconductor device comprising: a semiconductor package; a heat dissipation member; and a heat dissipation plate provided between the semiconductor package and the heat dissipation member, the heat dissipation plate comprising a first groove formed on an upper surface, a second groove formed on a lower surface, a through hole connecting the first groove and the second groove, and a first opening and a second opening formed on an end surface, the first groove, the second groove, and the through hole forming a flow path from the first opening to the second opening, a step of stacking the semiconductor package, the heat dissipation plate, and the heat dissipation member in this order; and injecting a thermally conductive material through the first opening of the heat sink to fill the first groove, the second groove, and the through-hole with the thermally conductive material. A method for manufacturing a semiconductor device.

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