Method for manufacturing a bonded light-emitting device wafer

Abstract

To provide a manufacturing method of a mating type light-emitting element wafer, capable of manufacturing the mating type light-emitting element wafer by selectively removing a defective part of a light emission element structure.SOLUTION: A manufacturing method of a mating type light-emitting element wafer, in which a defection part is removed, includes steps of: bonding a transparence bonded substrate to a light emission element structure and an LLO transfer laser beam that become a micro LED with an adhesive agent adsorbing the LLO transfer laser beam to obtain a bonding wafer; optically researching the defection part of the bonding wafer, and creating a removing map data; and obtaining the mating type light-emitting element wafer by removing a portion contained in the defection part of the light emission element structure by sublimating a part contained in the defection part of the light emission element structure by causing the removing laser beam to enter the defection part of the bonding wafer on the basis of the removing map data.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present invention relates to a method for manufacturing a bonded light-emitting device wafer, and more particularly to a method for manufacturing a bonded light-emitting device wafer from which defective portions have been removed. [Background technology]

[0002] A technology for bonding wafers via BCB has been disclosed as a wafer for AlGaInP-based micro LEDs (μ-LEDs).

[0003] In the above-mentioned wafers, since the wafers are bonded together, bonding defects may occur due to the surface conditions of the bonded wafer and the wafer to be bonded, or due to the presence of foreign matter in the epitaxial layer or at the bonding interface.

[0004] In many cases, the defective bonding portion has a convex shape, which causes a decrease in the accuracy of shape and dimensions during the device structure fabrication process, particularly during processing by photolithography.

[0005] Furthermore, when μ-LED dies fabricated from a wafer with such convex defects are transferred to a transfer substrate, the convex defects cause non-uniformity in the applied pressure, resulting in transfer failure.

[0006] Therefore, when transferring elements from a wafer on which junction-type μ-LEDs are formed, it is necessary to remove the convex defective parts before transferring.

[0007] With conventional LED dice, which are designed as discrete devices, there are various methods for physically removing defective parts.

[0008] For example, Patent Document 1 discloses a technology for holding dies by suction. However, when using a single plate for suction and holding, it is assumed that the heights of all dies are within a certain tolerance range. If a protrusion occurs on a wafer before device fabrication due to poor bonding, the heights of the dies after device fabrication will be uneven. Therefore, the prior art exemplified here will cause defects during transfer. Furthermore, because it involves bulk transfer, it is not a technology that can selectively remove defective parts.

[0009] Patent Document 2 discloses a technique for picking up dies using an electrostatic method, but like Patent Document 1, it is based on the premise that the dies are picked up onto a single plate-shaped jig, and is therefore a method that cannot be applied when convex portions are generated.

[0010] Patent Document 3 discloses a technology that optically detects defects and mechanically removes the defective die. Mechanical removal of defective dies requires a certain size (150 μm square or larger), and this technology cannot be applied to μ-LED dies, which are smaller than 100 μm square.

[0011] Furthermore, even if the technology of Patent Document 3 were to be improved to enable picking up of defective dies, the defective parts are firmly bonded to the bonded wafer by the BCB, and it is impossible to mechanically pick up the defective dies while holding the BCB part.

[0012] Thus, Patent Documents 1 to 3 do not disclose a technology for selectively removing defective portions of the μ-LED epitaxial layer portion firmly bonded to the bonded wafer via BCB or the μ-LED die that has been device-processed. [Prior art documents] [Patent documents]

[0013] [Patent Document 1] Patent Publication No. 2021-019162 [Patent Document 2] JP 2018-163900 A [Patent Document 3] Patent No. 5169509 Summary of the Invention [Problem to be solved by the invention]

[0014] In many cases, poor adhesion manifests itself as a convex shape on the epitaxial layer after the starting substrate is removed. In particular, convex defects caused by poor BCB curing can reach heights of approximately 100–300 μm and widths of approximately 500–5000 μm in diameter, adversely affecting photolithography. When performing photolithography using contact exposure, the wafer and photomask are tightly attached under vacuum, causing the mask to deform to match the wafer's total thickness variation (TTV). The presence of convex adhesion defects causes the incident light from the exposure source to be oblique, resulting in misalignment of the formed pattern from the mask pattern, resulting in distortion and enlargement. This causes the shapes of elements, electrodes, protective films, etc. to deviate from the design values, resulting in size and positional misalignment. When such elements are transferred to the mounting substrate, misalignment with the patterns on the mounting substrate occurs, reducing mounting accuracy and increasing the defect rate. Deviations from design values ​​are difficult to detect using only photoluminescence (PL) characteristic inspections or visual inspections, and abnormalities may only be noticed after mounting and turning on the power. If a defect is discovered after mounting, remounting is required, which increases mounting costs.

[0015] Furthermore, when μ-LED dies fabricated from such wafers are transferred to a transfer substrate, the protrusions cause unevenness in the applied pressure, which can easily lead to transfer failures.

[0016] Furthermore, the adhesive layer functions as an adhesive even in the defective area, and the defective area will not peel off or separate even with the tensile strength of vacuum suction or adhesion, and the defective area will remain.

[0017] Defective parts are not limited to defective connections, but also include defective element characteristics. Like defective connections, defective element characteristics are difficult to detect through PL characteristic inspections or visual inspections alone, and an abnormality may only be noticed after the device is mounted and powered on.

[0018] The objective of the present invention is to disclose a technology for selectively removing only defective portions of a μ-LED epitaxial layer that is firmly bonded to a bonded wafer via BCB or a μ-LED die that has been device-processed.

[0019] The present invention has been made to solve the above-mentioned problems, and aims to provide a method for manufacturing a bonded light-emitting element wafer, which can selectively remove defective parts of a light-emitting element structure that will become a micro LED bonded to a bonded wafer via an adhesive, thereby manufacturing a bonded light-emitting element wafer. [Means for solving the problem]

[0020] In order to solve the above problems, the present invention provides a method for manufacturing a bonded light-emitting element wafer from which defective portions have been removed, comprising the steps of: bonding a light-emitting element structure to be a micro LED and a substrate to be bonded that is transparent to LLO (Laser Lift-Off) transfer laser light with an adhesive that absorbs the LLO transfer laser light to obtain a bonded wafer; optically inspecting the defective portions of the bonded wafer and creating removal map data; and, based on the removal map data, irradiating the defective portions of the bonded wafer with removal laser light to sublimate the portions of the light-emitting element structure included in the defective portions, thereby removing the portions of the light-emitting element structure included in the defective portions, thereby obtaining a bonded light-emitting element wafer.

[0021] With this method for manufacturing a bonded light-emitting element wafer of the present invention, defective portions (e.g., defective bonding portions and portions with defective element characteristics) of light-emitting element structures included in the bonded light-emitting element wafer can be selectively removed by irradiating with laser light. Furthermore, with the method for manufacturing a bonded light-emitting element wafer of the present invention, defective portions of light-emitting element structures can be selectively removed easily without using mechanical techniques. In other words, with the method for manufacturing a bonded light-emitting element wafer of the present invention, a bonded light-emitting element wafer from which defective portions of the light-emitting element structures have been removed can be easily manufactured.

[0022] In the step of creating the removal map data, it is preferable that a photoluminescence spectrum of the bonded wafer is acquired, first map data regarding the defective portion is created using a peak wavelength, a peak intensity, and / or a peak half-width as criteria, the bonded wafer is photographed with a CCD camera from the bonded substrate side, second map data regarding the defective portion is created based on the color tone of the image obtained by photographing, topology data is obtained by irradiating a topology detection laser light onto the surface of the light-emitting element structure of the bonded wafer from an oblique direction, topology map data regarding the defective portion is created based on the topology data, and removal map data regarding the defective portion is created using the first map data, the second map data, and the topology map data.

[0023] Based on the removal map data created in this manner, it is possible to selectively and reliably remove all of the defective bonding portions and defective element characteristic portions of the light-emitting element structures included in the bonded light-emitting element wafer. In the case where removal map data is created before performing element isolation processing, the topology map data is acquired, and this is combined with the first map data and the second map data to create removal map data, and removal is performed using a laser based on this removal map data, thereby making it possible to selectively and reliably remove all of the defective bonding portions and defective element characteristic portions of the light-emitting element structures included in the bonded light-emitting element wafer. Furthermore, by doing so, it is possible to reduce portions with poor photolithography accuracy around the defective portions of the light-emitting element structures.

[0024] It is preferable to have a step of performing element separation processing after the step of obtaining the bonded light-emitting element wafer. This makes it possible to easily obtain a junction-type light-emitting element without any defective parts.

[0025] It is preferable to have a step of performing element separation processing on the light emitting element structures of the bonded wafer after the step of obtaining the bonded wafer and before the step of creating the removal map data.

[0026] By doing this for a bonded wafer including light-emitting element structures separated into elements, it is possible to easily selectively remove defective portions of the light-emitting element structures without affecting the good portions of the light-emitting element structures. By using this method, all of the defective bonding portions and defective element characteristic portions of the light emitting element structures included in the bonded light emitting element wafer can be selectively and reliably removed.

[0027] In this case, it is preferable that in the step of creating the removal map data, a photoluminescence spectrum of the bonded wafer is acquired, and first map data for the defective portions is created using peak wavelength, peak intensity, and / or peak half-width as judgment criteria; the bonded wafer is photographed from the bonded substrate side with a CCD camera, and second map data for the defective portions is created based on the color tone of the image obtained by photographing; a die pattern surface of the light-emitting element structure of the bonded wafer is photographed with a camera, and pass / fail is judged based on deviation from a basic pattern to create visual inspection map data; and removal map data for the defective portions is created using the first map data, the second map data, and the visual inspection map data.

[0028] By using the removal map data created in this manner, after element separation processing, it is possible to selectively and reliably remove all of the defective bonding portions and defective element characteristic portions of the light-emitting element structures contained in the bonded light-emitting element wafer.

[0029] It is preferable to use a laser beam having a wavelength of more than 360 nm and not more than 680 nm as the removal laser beam.

[0030] Laser light having a wavelength longer than 360 nm and equal to or shorter than 680 nm is a wavelength that is easily absorbed efficiently by the EP layer and has an extremely small absorption coefficient for layers other than the EP layer of the light-emitting device structure. Therefore, only the portion of the light-emitting device structure that is included in the defective portion can be sublimated, thereby removing only the portion of the light-emitting device structure that is included in the defective portion.

[0031] It is preferable that the removal laser light is incident from the light emitting element structure side or the bonded substrate side.

[0032] This allows the removal laser light to be accurately irradiated only to the defective portion, and by sublimating only the portion of the light-emitting element structure that is included in the defective portion, it is possible to remove only the portion of the light-emitting element structure that is included in the defective portion.

[0033] The adhesive is preferably selected from the group consisting of benzocyclobutene, silicone resin, epoxy resin, SOG (spin-on-glass), polyimide, and amorphous fluorine-based resin.

[0034] Such an adhesive can firmly bond the light emitting element structure to the substrate to be bonded, and can be easily evaporated using the LLO transfer laser light.

[0035] It is preferable that a protective material be applied to the light emitting device structure before removing the portion of the light emitting device structure that is included in the defective portion.

[0036] Such a protective material can prevent good portions of the light emitting element structure that should not be removed from being damaged by a receiving jig or the like when the bonded wafer is irradiated with laser light.

[0037] As the protective material, it is preferable to use a polyvinyl acetate-containing protective material or a polyvinyl alcohol-containing protective material.

[0038] Such a protective material is preferable because it can be easily removed. [Effects of the Invention]

[0039] As described above, the method for manufacturing a bonded light-emitting element wafer of the present invention makes it possible to selectively remove defective portions of light-emitting element structures included in the bonded light-emitting element wafer. In other words, the method for manufacturing a bonded light-emitting element wafer of the present invention makes it possible to manufacture a bonded light-emitting element wafer that does not include defective light-emitting element structures. [Brief explanation of the drawings]

[0040] [Figure 1] 3 is a schematic cross-sectional view showing a part of a step of obtaining a bonded wafer in the first embodiment of the method for producing a bonded light-emitting element wafer of the present invention. FIG. [Figure 2]FIG. 4 is a schematic cross-sectional view showing another part of the step of obtaining a bonded wafer in the first embodiment of the method for producing a bonded light-emitting element wafer of the present invention. [Figure 3] 1 is a schematic cross-sectional view of a bonded wafer obtained in a step of obtaining a bonded wafer in a first embodiment of a method for producing a bonded light-emitting element wafer of the present invention. FIG. [Figure 4] 1 is a schematic cross-sectional view showing a part of a process for obtaining a bonded light-emitting element wafer in a first embodiment of a method for producing a bonded light-emitting element wafer according to the present invention. [Figure 5] 3 is a schematic cross-sectional view showing irradiation of a removal laser beam in a first embodiment of a method for producing a bonded light-emitting element wafer according to the present invention. FIG. [Figure 6] 1 is a schematic cross-sectional view of a bonded light-emitting element wafer obtained after removing a portion included in a defective portion of a light-emitting element structure in a first embodiment of a method for manufacturing a bonded light-emitting element wafer of the present invention. [Figure 7] 1 is a schematic cross-sectional view of a bonded light-emitting element wafer after element separation processing in a first embodiment of a method for producing a bonded light-emitting element wafer of the present invention. [Figure 8] 3 is a schematic cross-sectional view showing a part of a protective film forming step in a first embodiment of a method for manufacturing a bonded light-emitting element wafer according to the present invention. FIG. [Figure 9] 1 is a schematic cross-sectional view of a bonded light-emitting element wafer obtained by a first embodiment of a method for producing a bonded light-emitting element wafer of the present invention. [Figure 10A] 1 is a part of removal map data used in a first embodiment of a method for manufacturing a junction type light-emitting element wafer according to the present invention. [Figure 10B] 1 is a schematic plan view showing irradiation of a removal laser beam in a first embodiment of a method for producing a junction-type light-emitting element wafer according to the present invention. FIG. [Figure 10C] 1 is a schematic plan view of a light emitting element structure after removing a portion included in a defective portion of the light emitting element structure in a first embodiment of a method for manufacturing a bonded light emitting element wafer according to the present invention. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0041] As described above, there has been a need for a method for manufacturing a bonded light-emitting device wafer that can selectively remove defective portions of a light-emitting device structure that will become a micro LED bonded to a bonded wafer via an adhesive, thereby manufacturing a bonded light-emitting device wafer.

[0042] As a result of extensive research into the above-mentioned problems, the inventors discovered that defective portions of light-emitting element structures included in a bonded light-emitting element wafer can be selectively removed by irradiating them with laser light, and thus completed the present invention.

[0043] That is, the present invention is a method for manufacturing a bonded light-emitting element wafer from which defects have been removed, comprising the steps of: bonding a light-emitting element structure to be a micro LED and a substrate to be bonded that is transparent to the LLO transfer laser light with an adhesive that absorbs the LLO transfer laser light to obtain a bonded wafer; optically inspecting the defects in the bonded wafer and creating removal map data; and, based on the removal map data, irradiating a removal laser light onto the defects in the bonded wafer to sublimate the portions of the light-emitting element structure included in the defects, thereby removing the portions of the light-emitting element structure included in the defects, thereby obtaining a bonded light-emitting element wafer.

[0044] The present invention will be described in detail below with reference to the drawings, but the present invention is not limited thereto.

[0045] [Method for manufacturing a bonded light-emitting device wafer] The method for manufacturing a bonded light-emitting element wafer according to the present invention is a method for manufacturing a bonded light-emitting element wafer from which defective portions have been removed, and includes the steps of: bonding a light-emitting element structure that will become a micro LED to a substrate to be bonded that is transparent to the LLO transfer laser light with an adhesive that absorbs the LLO transfer laser light to obtain a bonded wafer; optically inspecting the defective portions of the bonded wafer and creating removal map data; and, based on the removal map data, irradiating a removal laser light onto the defective portions of the bonded wafer to sublimate the portions of the light-emitting element structure that are included in the defective portions, thereby removing the portions of the light-emitting element structure that are included in the defective portions, thereby obtaining a bonded light-emitting element wafer.

[0046] Hereinafter, a method for manufacturing such a bonded light-emitting device wafer will be described in more detail with a specific example.

[0047] (First embodiment) <Process for obtaining bonded wafers> First, the process for obtaining the bonded wafer in this embodiment will be described.

[0048] First, a first conductivity type GaAs buffer layer (not shown) is laminated on a first conductivity type GaAs substrate (starting substrate) 1 shown in FIG. 1, and then a 0.1 μm thick first conductivity type Ga x In 1-x A P (0.4≦x≦0.6) first etch stop layer and a 0.1 μm thick GaAs second etch stop layer of the first conductivity type are grown in sequence to form etch stop layer 2. Next, as shown in FIG. 1, a 1.0 μm thick (Al y Ga 1-y ) x In 1-x P(0.4≦x≦0.6, 0.6≦y≦1.0) first cladding layer 31, 0.6 μm thick undoped (Al y Ga 1-y ) x In 1-x P(0.4≦x≦0.6, 0≦y≦0.5) active layer 32, a 1.0 μm thick second conductivity type (Al y Ga 1-y )x In 1-x P(0.4≦x≦0.6, 0.6≦y≦1.0) second cladding layer 33, 0.1 μm thick second conductivity type Ga x In 1-x An EPW (epitaxial wafer) 100 is prepared, which has a light-emitting element structure 3 as an epitaxial functional layer, in which a P(0.5≦x≦1.0) intermediate layer (not shown) and a second-conductivity type GaP window layer 34 are sequentially grown. Here, the first cladding layer 31 to the second cladding layer 33 are referred to as a DH structure. The light-emitting element structure 3 is processed into elements (dices) that will become micro LEDs in a later process.

[0049] The film thicknesses exemplified above are merely examples, and the film thickness is merely a parameter that may be changed depending on the operating specifications of the device, and it goes without saying that the film thickness is not limited to the film thicknesses described here. Furthermore, it goes without saying that the concept of each layer not being a single-composition layer but having multiple composition layers within the composition ranges exemplified above also goes without saying. Furthermore, it goes without saying that the concept of each layer not being uniform in carrier concentration level but having multiple levels within each layer also goes without saying.

[0050] The active layer 32 may be composed of a single composition, or may have a structure in which multiple barrier layers and active layers are alternately stacked, and it goes without saying that both have similar functions, and therefore either one can be selected.

[0051] Next, benzocyclobutene (BCB) 4 is spin-coated onto the EPW 100 as an adhesive (thermosetting bonding material), and the light-emitting element structure 3 is placed face-to-face with a sapphire wafer, which is the substrate 5 to be bonded, via the adhesive 4, and then thermocompression bonded to produce an EPW bonded substrate 200, as shown in Figure 2, in which the light-emitting element structure 3 of the EPW 100 and the sapphire wafer 5 are bonded via BCB 4.

[0052] In this embodiment, sapphire is used as an example of the bonded substrate 5, but the bonded substrate 5 is not limited to sapphire, and it goes without saying that any material can be selected as long as it ensures transparency to the LLO laser light described below and flatness. In addition to sapphire, quartz can also be selected.

[0053] In this embodiment, the BCB 4 is applied in a layered state, but it goes without saying that the adhesive 4 is not limited to a layered state. It goes without saying that similar results can be obtained by using photosensitive BCB to pattern isolated islands, lines, or other shapes and then performing the bonding process.

[0054] Next, the GaAs starting substrate 1 is removed by wet etching to expose the first etch stop layer, and then the etchant is switched to remove the second etch stop layer, thereby removing the etch stop layer 2 and exposing the first cladding layer 31. As shown in Figure 3, a bonded wafer (EP bonded substrate) 10 is produced in which the light-emitting element structure 3 including the DH layer and window layer 34 is bonded to the bonded substrate 5 via the adhesive 4.

[0055] The BCB is applied by, for example, spin coating. The thickness of the adhesive 4, the design film thickness of the BCB4 layer, is preferably 0.1 to 2 μm. For example, it can be 0.6 μm. This allows for strong and sufficient adhesion. A thickness of 0.1 μm or more is preferable because it makes it easy to control the thickness and improves the bonding yield. A thickness of 2 μm or less is preferable because it makes it less likely for crown to occur and shortens the process time when peeling and removing the BCB during the laser lift-off (LLO) process when mounting micro LEDs.

[0056] <Process for creating removal map data> Next, defective portions of the bonded wafer 10 are optically inspected and removal map data is created.

[0057] In this embodiment, first map data relating to defective parts, topology map data relating to defective parts, and second map data relating to defective parts are created, and these map data are used to create removal map data relating to defective parts.

[0058] The acquisition of each map data will be explained below.

[0059] [First map data] First, a laser with a wavelength of 325 to 532 nm and a spot diameter of 100 μm is irradiated from the EP layer side at a 25 μm pitch over the entire area of ​​the bonded wafer 10, and photoluminescence (PL) spectra are collected to create first map data. While any of the above wavelengths can be selected as the laser wavelength, in this embodiment a solid-state laser with an oscillation wavelength of 532 nm was used. In this embodiment, the laser irradiation is performed from the EP layer side, but it is not limited to the form of irradiation from the EP layer, and it goes without saying that similar data can be obtained even if the laser is irradiated through the sapphire substrate.

[0060] In this embodiment, the dominant wavelength of EPW100 during EL emission is designed to be 632 nm, and a position within the range of 632±5 nm is set as a pass point, and any other wavelength range is set as a fail point, to create first map data regarding defective parts, particularly parts with defective element characteristics.

[0061] In this embodiment, wavelength is used as an example of an item to be checked for defects, but it goes without saying that the criteria for judgment are not limited to wavelength alone. In many cases, convex defects are subjected to stress due to deformation, which may result in cracks. Because large stress increases the peak full width at half maximum, and cracks cause a significant decrease in PL intensity, the PL intensity or full width at half maximum may be used as criteria for judgment, or may be added to the criteria for creating the first map data. It goes without saying that which of intensity, wavelength, or full width at half maximum should be prioritized, or whether to use an OR condition rather than an AND condition for judgment, is a design matter, and is merely a condition that can be determined depending on the bonding state.

[0062] [Topology map data] A laser with an oscillation wavelength of 532 nm is irradiated obliquely onto the surface of the bonded wafer 10 on the side of the light-emitting element structure 3 in Figure 3. Using a system in which a photodetector is placed in the direction of reflection at the same angle as the laser incident angle, the laser is irradiated over the entire surface of the wafer at 25 μm intervals, and deviations in the reflection angle are measured. Because the reflection angle deviates upward at the convex parts of the light-emitting element structure 3 and downward at the concave parts, topology data is collected from the deviations in the reflection angle. The height tolerance is used as a threshold, and topology map data is created in which points within the tolerance are passed and any other points are rejected.

[0063] [Second map data] The bonded wafer 10 in Figure 3 is photographed with a CCD camera from the side of the bonded substrate (sapphire substrate) 5, and the pass / fail grade is determined based on the color tone of the photograph. Failing grades, which are poorly bonded, tend to be slightly whiter (lighter) in color than uniformly bonded grades, and the pass / fail grade is determined based on the contrast difference. Second map data is created for the defective areas, especially the poorly bonded areas, which are determined as pass / fail using a 25 μm pitch mesh.

[0064] The defective parts of the first map data, topology map data, and second map data obtained as described above are superimposed to create removal map data. Although the positions of the three map meshes do not match, areas defined as defective parts in any one of the maps are defined as defective parts, and removal map data is created.

[0065] <A step of irradiating a removal laser beam onto the defective portion of the bonded wafer based on the removal map data, and removing the portion of the light-emitting element structure included in the defective portion, thereby obtaining a bonded light-emitting element wafer> In this step, a bonded light-emitting device wafer is obtained according to the procedure described below.

[0066] First, as shown in FIG. 4, a protective material 6 is applied onto the surface of the bonded wafer 10 from which the starting substrate has been removed. In this embodiment, the protective material 6 may be Hogomax (trademark: SDS-based propylene glycol monomethyl ether / polyvinyl alcohol containing material) manufactured by DISCO. The material for the protective material 6 is not limited to Hogomax, and any material that functions as a protective material and is easily removable may be selected. In addition to Hogomax, for example, polyvinyl acetate and polyvinyl alcohol are also suitable. The protective material 6 is applied by spin coating.

[0067] The bonded wafer (EP bonded substrate) 10 coated with the protective material 6 is introduced into the laser processing section, and the surface of the EP layer is irradiated with a laser in accordance with the removal map data, and defective portions are removed by ablation as follows.

[0068] The bonded wafers 10 coated with the protective material 6 are introduced into the laser processing section. For example, the bonded wafers 10 are held by a bonded wafer receiving jig and introduced into the laser processing section. The bonded wafer receiving jig has an opening in the center, the periphery of which forms a wafer receiving groove. When holding the bonded wafers, the light emitting element structures are positioned in the opening.

[0069] Furthermore, when introducing the bonded wafer 10, the surface coated with the protective material 6 is introduced so that it faces upward. In this embodiment, the case where the surface coated with the protective material 6 faces upward is exemplified, but it goes without saying that this is not limited to the upward position, and the coated surface may be set facing downward or to the side. However, when facing upward, since laser ablation processing equipment is generally structured so that the laser irradiation port is located above (toward the ceiling) the substrate introduction section (wafer setting section), the layout of the removal laser (ablation laser) and the substrate introduction section within the equipment is similar to that of conventional equipment, which is advantageous in that it is easy to design and existing equipment can be used.

[0070] Next, a removal laser is irradiated from the light emitting element structure 3 side of the bonded wafer 10 onto the area defined as a defective portion based on the removal map data obtained earlier.

[0071] 10A shows a part of an example of removal map data. The removal map data shown in FIG. 10A mainly shows a defective portion 10A of the bonded wafer 10. The defective portion 10A includes a defective portion of the light-emitting element structure 3.

[0072] In this embodiment, the defective portion 10A is irradiated with the removal laser light multiple times, as shown in Fig. 10B. This creates multiple laser irradiation areas (per irradiation) 81, and as a whole, creates a laser irradiation area 82 that can be said to consist almost entirely of the defective portion 10A. In other words, the removal laser light can be irradiated onto all of the defective portions 10A of the bonded wafer 10 (including the defective portions of the light-emitting element structures 3).

[0073] 5 shows a state in which removal laser light 83 emitted from laser head 8 is incident on the light-emitting element structure 3 side, the removal laser light 83 is absorbed by the portion of light-emitting element structure 3 that was included in defective portion 10A of bonded wafer 10, the portion of light-emitting element structure 3 that was included in defective portion 10A sublimes and becomes gaseous and disappears, and the convex defective portion of light-emitting element structure 3 has disappeared. Because the defective portion disappears almost along the laser irradiation direction, the influence on adjacent good portions of light-emitting element structure 3 is minimized.

[0074] That is, by irradiating the defective portion 10A of the bonded wafer 10 with the removal laser light, the portion of the light-emitting element structure 3 that includes the defective portion 10A of the bonded wafer 10 (defective portion) can be removed. In this embodiment, the laser is irradiated onto the surface of the EP layer, but it goes without saying that the same effect can be obtained by irradiating the laser from the sapphire substrate side, which does not absorb the laser light. Note that the wavelength of the removal laser light is hardly absorbed by the adhesive 4.

[0075] The removal laser light 83 may be a laser light (visible light) having a wavelength of more than 360 nm and not more than 680 nm. For example, an Ar + An excimer laser is used. The laser light having a wavelength of more than 360 nm and not more than 680 nm is a wavelength that is easily absorbed by the EP layer and has an extremely small absorption coefficient for layers other than the EP layer of the light emitting device structure. Therefore, only the portion of the light emitting device structure that is included in the defective portion can be sublimated, thereby removing only the portion of the light emitting device structure that is included in the defective portion. The difference between the removal laser light 83 and the laser light for measuring the PL map or topology map is the laser output. When the removal laser light 83 as in this embodiment is a CW (continuous wave) laser, the density after focusing is generally 100 mW / cm. 2 ~100TW / cm 2 10kW / cm 2 Under these energy densities, the temperature of the epitaxial layer rises excessively, so for PL and topo measurements, a lower energy density of 1kW / cm is recommended. 2 PL and topo measurements are performed using the following low-power lasers.

[0076] The previously described Figure 10B is a conceptual diagram of removing the defective bonded portion using the removal laser. As shown in Figure 10B, the removal laser irradiates the laser along the outline of the removal area (the portion of the light-emitting element structure 3 that is included in the defective portion 10A of the bonded wafer 10). After the laser irradiation, a region 35 with a minimum area from which the defective portion has been removed can be obtained, as shown in Figure 10C. In other words, the defective portion can be completely removed, with only a slight protrusion remaining, which can be said to be almost entirely the defective portion. After laser irradiation, the defective bonding area can be removed with a minimum area, as shown in Figure 10C. The laser irradiation ablates and removes an area that includes the area slightly outside the irradiated area, but the boundary of the ablation removal is determined by the heat conduction of the epitaxial layer, so it is kept within a few microns in width from the irradiated area, or 10 μm or less in width. Because the defective area is removed from the EP layer, it leaves a depression on the EP layer surface.

[0077] Next, the bonded wafer 10 is removed from the laser processing section, and the protective material 6 is removed by washing with pure water with the surface coated with the protective material 6 facing downward. This results in a bonded light-emitting element wafer 20, as shown in Figure 6, in which the light-emitting element structure 3 including the region 35 from which the defective portion has been removed and the bonded substrate 5 are bonded via the adhesive 4. The wafer before the protective material 6 is removed can also be called a bonded light-emitting element wafer. Debris generated during the ablation process is present on the protective material and is removed from the EP layer surface along with the protective material during the cleaning process.

[0078] The light-emitting element structure 3 is a structure that will become a micro LED, and can be subjected to element isolation processing, for example, as shown below. An example of processing will be described below.

[0079] A mask pattern is formed on the light-emitting element structure 3 by photolithography, and the light-emitting element structure 3 is subjected to element isolation processing by ICP. By this processing, the light-emitting element structure 3 becomes elements (light-emitting element structures that have been isolated, i.e., dices) 9 separated by isolation grooves 21, as shown in FIG. 7. Gases used for ICP are, for example, chlorine and argon. The ICP processing is performed twice, for example, in a step of exposing the bonded substrate 5 and a step of exposing a portion of the main surface of the second cladding layer 33.

[0080] Although the present embodiment illustrates the case where a portion of the principal surface of the second cladding layer 33 is exposed, it goes without saying that the present invention is not limited to exposing a portion of the principal surface of the second cladding layer 33, and that the purpose of processing can be achieved as long as the active layer 32 is separated to a minimum extent. It goes without saying that the same effect can be obtained even when a portion of the principal surface of the GaP window layer 34 is exposed instead of exposing the second cladding layer 33.

[0081] After the element isolation process, a protective film 91 is formed as end face processing, as shown in FIG. 8. In this embodiment, SiO2 is used as the protective film 91. The protective film 91 is not limited to SiO2, and any material can be selected as long as it can protect the end face and has insulating properties. SiNx Alternatively, the protective film 91 may be made of titanium oxide, magnesium oxide, etc. An opening 92 that exposes a portion of the main surface of the first cladding layer 31 and an opening 93 that exposes a portion of the main surface of the second cladding layer 33 are provided in the protective film 91.

[0082] 9, electrodes 94 and 95 are formed in contact with the first conductivity type layer or the second conductivity type layer, respectively, and heat treatment is performed to form ohmic contacts. In this embodiment, the first conductivity type is designed to be N-type, and the second conductivity type is designed to be P-type, and a metal containing Au and Si is used for the N-type electrode 94 that contacts the first cladding layer 31, which is an N-type layer, through an opening 92, and a metal containing Au and Be is used for the P-type electrode 95 that contacts the second cladding layer 33, which is a P-type layer, through an opening 93.

[0083] In this embodiment, the metals Au and Si are used as the N-type electrode, but it goes without saying that the material is not limited to this and that similar results can be obtained by using a metal containing Au and Ge.Furthermore, the metals Au and Be are used as the P-type electrode, but it goes without saying that the material is not limited to this and that similar results can be obtained by using a metal containing Au and Zn.

[0084] Furthermore, although BCB is used as the adhesive 4 in this embodiment, the material for the adhesive 4 used in the present invention is not limited to BCB. For example, when a bonded substrate 5 that is transparent to the LLO transfer laser light having a wavelength of 170 nm or more and 360 nm or less is used, an adhesive 4 having an optical absorption edge in the wavelength range of 170 nm or more and 360 nm or less can be easily sublimated by the LLO transfer laser light having a wavelength of 170 nm or more and 360 nm or less that can transmit through the bonded substrate 5. Examples of the adhesive 4 include BCB, silicone resin, epoxy resin, SOG, polyimide, and amorphous fluorine-based resin (e.g., Cytop (registered trademark)). Use of these can firmly bond the light-emitting element structure 3 and the bonded substrate 5.

[0085] Second Embodiment In the second embodiment, the process for obtaining the bonded wafer 10 is the same as in the first embodiment, but differs from the first embodiment in that element isolation processing and electrode formation processing for the light-emitting element structure 3 are performed before the process for obtaining the removal map data.

[0086] The element isolation process and electrode formation process can be performed in the same manner as described with reference to Figures 7 to 9, except that the defective portions of the light-emitting element structure 3 are not removed. In the second embodiment, the element isolation (dicing) process and electrode attachment are performed while the convex defective portions are present in the light-emitting element structure 3, and therefore elements with defective shapes or dimensions may be formed in the defective portions. Such defective portions are later removed by irradiating a removal laser based on removal map data.

[0087] However, unlike the first embodiment, the laser is irradiated only from the sapphire substrate side to create the PL map data, because the device pattern (electrodes) is placed on top, making it difficult to irradiate from the opposite side. Moreover, in the second embodiment, unlike the first embodiment, the process is carried out after die processing, which is not suitable for obtaining topology map data. Therefore, instead of obtaining topology map data, the die pattern surface is photographed with a camera, and the pass / fail is determined based on deviations from the basic pattern (foreign matter, size abnormalities), and appearance inspection map data is created.

[0088] Then, similarly to the first embodiment, the first map data, the second map data, and the visual inspection map data are used to superimpose the defective parts, thereby creating removal map data.

[0089] When removing the defective portions, a protective material is applied to the surface of the elements obtained by separating the light-emitting element structures of the bonded wafer, as in the first embodiment. Then, a laser is irradiated from the sapphire substrate side using the same procedure as in the first embodiment to remove the defective portions. Thereafter, the protective material is washed with water and removed, as in the first embodiment. This makes it possible to obtain a bonded light-emitting element wafer in which the light-emitting element structures (elements) from which the defective portions have been removed are bonded to the bonded substrate via an adhesive.

[0090] The method for manufacturing a bonded light-emitting element wafer according to the present invention described above makes it possible to selectively remove defective portions of the light-emitting element structure easily without using mechanical techniques and without affecting good portions of the light-emitting element structure (e.g., other dice regions). Furthermore, according to the present invention, it is possible to remove all of the portions of the light-emitting element structure that were included in the defective portions of the bonded wafer.

[0091] In particular, by removing defective bonding portions (particularly convex defective portions) before starting device processes such as element isolation processing as in the first embodiment, it is possible to reduce photolithography precision defects around the defective portions.

[0092] Furthermore, in the second embodiment, defective portions of the light-emitting element structure can be selectively removed easily without using mechanical techniques and without affecting good portions (e.g., other die regions) of the light-emitting element structure. In the second embodiment, the process of determining whether the device structure is good or bad and removing the defective parts is illustrated, but it goes without saying that the process is not limited to only removing the defective parts after the device structure has been completely fabricated. In other words, it goes without saying that the same effect can be obtained even if the process is performed after element isolation or after the formation of a protective film.

[0093] As described above, in the method for manufacturing a bonded light-emitting device wafer of the present invention, defective portions (e.g., defective bonding portions and portions with defective device characteristics) of the light-emitting device structures included in the bonded light-emitting device wafer can be selectively removed, thereby manufacturing a bonded light-emitting device wafer including light-emitting device structures from which the defective portions have been removed. [Example]

[0094] EXAMPLES The present invention will be specifically explained below using examples and comparative examples, but the present invention is not limited to these.

[0095] (First Example) In the first example, a junction-type light-emitting element wafer was manufactured using the same procedure as in the first embodiment described above. Specifically, the procedure is as follows.

[0096] First, an EPW 100 having the EPW structure shown in FIG. 1 was obtained using the same procedure as previously described.

[0097] Next, BCB4 was applied onto the light-emitting element structure 3 of EPW100 by spin coating to a designed film thickness of 0.6 μm.

[0098] This was placed face-to-face on a sapphire wafer, which was the wafer to be bonded 5, and then thermocompression bonded to produce an EPW bonded substrate 200 (FIG. 2).

[0099] Next, the GaAs starting substrate 1 was removed by wet etching to expose the first etch stop layer, and the etchant was switched to remove the second etch stop layer, thereby removing the etch stop layer 2 and exposing the first cladding layer 31. A bonded wafer (EP bonded substrate) 10 (FIG. 3) was produced in which the light-emitting element structure 3 including the DH layer and window layer 34 was bonded to the bonded substrate 5 via the adhesive 4.

[0100] Next, removal map data was created in the following procedure.

[0101] The entire area of ​​the bonded wafer 10 was irradiated with a laser having a wavelength of 532 nm and a spot diameter of 100 μm at a pitch of 25 μm, and PL spectra were collected to create map data. In this example, the design wavelength of the EPW was set to 632 nm, and first map data was created with positions within the range of 632±5 nm as pass points and other wavelength ranges as fail points.

[0102] Additionally, a laser with an oscillation wavelength of 532 nm was irradiated obliquely onto the surface of the bonded wafer 10 facing the light-emitting element structure 3, and topology data was collected by irradiating the entire wafer with the laser at a 25 μm pitch using a system in which a photodetector was placed in the direction of reflection at the same angle as the laser incident angle. Topology map data was created in which points within the height tolerance were considered to be pass marks, and points outside the tolerance were considered to be fail marks.

[0103] Furthermore, the bonded wafer 10 was photographed from the sapphire substrate 5 side with a CCD camera, and second map data was created in which pass / fail was judged based on the contrast difference with a 25 μm pitch mesh.

[0104] The defective portions of the first map data, topology map data, and second map data obtained as described above were superimposed to create removal map data.

[0105] Next, a protective material 6 was applied by spin coating using Hogomax (trademark) manufactured by DISCO Corporation onto the surface of the bonded wafer 10 from which the starting substrate had been removed of the light-emitting element structure 3, as shown in FIG.

[0106] The bonded wafer 10 coated with the protective material 6 was held by a bonded wafer receiving jig and introduced into the laser processing section with the surface coated with the protective material 6 facing up. At this time, the wafer was held so that the edge of the sapphire substrate 5 was caught in the wafer receiving groove of the jig.

[0107] In the laser processing portion, as shown in FIG. 5 and FIG. 10B, Ar with a wavelength of 514.5 nm is irradiated only onto the region defined as the defective portion 10A (and a small protruding portion that can be considered as a defective portion) from the light emitting element structure 3 side in accordance with the removal map data. + The defective portion was removed by irradiating with an excimer laser.

[0108] Next, the wafer was removed from the laser processing section and washed with pure water with the surface coated with the protective material 6 facing upward, thereby removing the protective material 6 as shown in FIG.

[0109] Next, a mask pattern was formed on the light-emitting element structure 3 by photolithography, and element isolation processing was performed by ICP using chlorine and argon gas. The ICP processing was performed twice: one step of exposing the bonded substrate 5 and one step of exposing a part of the main surface of the second cladding layer 33. By this element isolation processing, the light-emitting element structure 3 was made into elements (light-emitting element structures processed for element isolation) 9 separated by isolation grooves 21, as shown in FIG.

[0110] After the element isolation process, as shown in Figure 8, an SiO2 protective film 91 was formed as an end face treatment, and an opening 92 exposing a part of the main surface of the first cladding layer 31 and an opening 93 exposing a part of the main surface of the second cladding layer 33 were provided in the protective film 91.

[0111] 9, electrodes 94 and 95 were formed in contact with the first conductivity type layer or the second conductivity type layer, respectively, and heat treatment was performed to form ohmic contacts. In this example, the first conductivity type was designed to be N-type, and the second conductivity type was designed to be P-type, and a metal containing Au and Si was used for the N-type electrode 94 in contact with the first cladding layer 31, which is an N-type layer, and a metal containing Au and Be was used for the P-type electrode 95 in contact with the second cladding layer 33, which is a P-type layer.

[0112] In this manner, a junction-type light-emitting element wafer 20 of the first embodiment having the structure shown in FIG. 9 was obtained.

[0113] (Second Example) In the second example, a junction-type light-emitting element wafer was manufactured using the same procedure as in the second embodiment described above.

[0114] That is, in the second embodiment, the bonded light-emitting element wafer of the second embodiment was manufactured in the same manner as in the first embodiment, except that the element isolation processing and electrode formation processing for the light-emitting element structure 3 were performed before the process of obtaining the removal map data, and that visual inspection map data was obtained instead of topology map data.

[0115] (Comparative Example) In the comparative example, a bonded light-emitting element wafer of the comparative example was manufactured in the same manner as in the first example, except that the defective portions of the light-emitting element structures were not removed.

[0116] That is, in the comparative example, the process for obtaining the bonded wafer 10 is the same as that in the first embodiment, and The element isolation process and the electrode formation process were carried out in the same manner as in Example 2. However, in the comparative example, unlike Example 2, map data creation and removal were not carried out, and therefore the defective portions of the light-emitting element structure remained as they were.

[0117] (evaluation) Table 1 below shows a comparison of the removal rate of convex defects and the final yield of the number of dice that did not cause any problems during mounting.

[0118] [Table 1]

[0119] In the first embodiment, when the convex defective portion was removed, the defective portion and both portions were connected due to the wafer state, and when the light-emitting element structure in the defective portion was sublimated, a melted portion was generated due to heat transfer to the adjacent good portion, so the removal rate slightly exceeded 100%. In the second embodiment, the defective parts were removed in the dice state, so when the light-emitting element structure was sublimated, heat transfer stopped at the separation grooves between the dice, and the melting did not spread to the adjacent good parts.As a result, the recognized defective area (= dice area) and the removed area roughly coincided, resulting in a removal rate of 100%. In the comparative example, no removal was performed, and the removal rate was 0%.

[0120] Table 1 above also shows the mounting die yield when 10 bonded light-emitting element wafers obtained by the methods of the first and second examples and the comparative example were put into a mounting (transfer) process.

[0121] The figures in parentheses indicate the variation of the 10 sheets, and the figures outside parentheses are the average values. When 10 bonded wafers were put into the mounting process, and after the defective parts were removed using the first or second example, they were put into the mounting (transfer) process, and the yield of the number of dice that did not cause any problems during mounting was over 90%. In contrast, in the comparative example, the spread of the convex portion made it easy for defects to occur during die pickup, and problems such as incomplete removal of the defective portion and damage to the die around the defective portion reduced the number of die that could be mounted, resulting in a yield reduction of about 20%.

[0122] As described above, the first and second embodiments, in which the defective parts are removed before the die is transferred to the transfer substrate and then put into the mounting process, can improve the final mounting yield.

[0123] The present specification includes the following aspects. [1] A method for manufacturing a bonded light-emitting element wafer from which defects have been removed, comprising the steps of: bonding a light-emitting element structure to be a micro LED and a substrate to be bonded that is transparent to the LLO transfer laser light with an adhesive that absorbs the LLO transfer laser light to obtain a bonded wafer; optically inspecting the defects in the bonded wafer and creating removal map data; and, based on the removal map data, irradiating the defects in the bonded wafer with a removal laser light to sublimate the parts of the light-emitting element structure included in the defects, thereby removing the parts of the light-emitting element structure included in the defects, thereby obtaining a bonded light-emitting element wafer. [2] A method for manufacturing a bonded light-emitting element wafer according to [1], wherein in the step of creating map data for removal, a photoluminescence spectrum of the bonded wafer is acquired, and first map data for the defective portions is created using peak wavelength, peak intensity, and / or peak half-width as criteria for judgment, the bonded wafer is photographed with a CCD camera from the bonded substrate side, and second map data for the defective portions is created based on the color tone of the image obtained by photographing, topology data is obtained by irradiating a topology detection laser beam onto a surface of the light-emitting element structure of the bonded wafer from an oblique direction, and topology map data for the defective portions is created based on the topology data, and removal map data for the defective portions is created using the first map data, the second map data, and the topology map data. [3] A method for producing a bonded light-emitting element wafer according to [1] or [2], further comprising the step of performing element separation processing after the step of obtaining the bonded light-emitting element wafer. [4] A method for manufacturing a bonded light-emitting element wafer according to [1], characterized in that after the step of obtaining the bonded wafer and before the step of creating the removal map data, a step of performing element separation processing on the light-emitting element structures of the bonded wafer is included. [5] A method for manufacturing a bonded light-emitting element wafer according to [4], characterized in that in the step of creating the removal map data, a photoluminescence spectrum of the bonded wafer is acquired, and first map data for the defective portions is created using peak wavelength, peak intensity, and / or peak half-width as judgment criteria; the bonded wafer is photographed from the bonded substrate side with a CCD camera, and second map data for the defective portions is created based on the color tone of the image obtained by photographing; the die pattern surface of the light-emitting element structure of the bonded wafer is photographed with a camera, and pass / fail is judged based on deviation from a basic pattern, and visual inspection map data is created; and removal map data for the defective portions is created using the first map data, the second map data, and the visual inspection map data. [6] The method for producing a junction-type light-emitting element wafer according to any one of [1] to [5], wherein the removal laser light is a laser light having a wavelength of more than 360 nm and not more than 680 nm. [7] The method for manufacturing a bonded light-emitting element wafer according to any one of [1] to [6], wherein the removal laser light is incident from the light-emitting element structure side or the bonded substrate side. [8] A method for manufacturing a bonded light-emitting element wafer according to any one of [1] to [7], characterized in that the adhesive used is selected from the group consisting of benzocyclobutene, silicone resin, epoxy resin, SOG, polyimide, and amorphous fluorine-based resin. [9] A method for manufacturing a bonded light-emitting element wafer according to any one of [1] to [8], characterized in that a protective material is applied to the light-emitting element structure before removing the portion of the light-emitting element structure that is included in the defective portion.

[10] The method for manufacturing a bonded light-emitting element wafer according to [9], wherein the protective material is a polyvinyl acetate-containing protective material or a polyvinyl alcohol-containing protective material.

[0124] The present invention is not limited to the above-described embodiments. The above-described embodiments are merely examples, and anything that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits similar effects is included within the technical scope of the present invention. [Explanation of symbols]

[0125] 1...Starting substrate, 2...Etch stop layer, 3...Light emitting element structure (epitaxial functional layer), 4...Adhesive (BCB), 5...Bonded substrate (sapphire wafer), 6...Protective material, 8...Laser head, 9...Light emitting element structure (dice) processed for element separation, 10...Bonded wafer, 10A...Defective portion, 20...Bonded light emitting element wafer, 21...Separation groove, 31...First cladding layer, 32...Active layer, 33...Second cladding layer, 34...GaP window layer, 35...Area from which light emitting element structure has been removed, 81 and 82...Laser irradiation area, 83...Removal laser light, 91...Protective film, 92 and 93...Opening, 94...N-type electrode, 95...P-type electrode, 100...EPW (epitaxial wafer), 200...EPW bonded substrate.

Claims

1. A method for manufacturing a bonded light-emitting element wafer from which defective portions have been removed, comprising: a step of bonding a light emitting element structure to be a micro LED and a substrate to be bonded that is transparent to the LLO transfer laser light with an adhesive that absorbs the LLO transfer laser light to obtain a bonded wafer; optically inspecting the defective portions of the bonded wafers and creating removal map data; and a step of irradiating a removal laser beam onto a defective portion of the bonded wafer based on the removal map data, thereby sublimating the portion of the light-emitting element structure included in the defective portion, thereby removing the portion of the light-emitting element structure included in the defective portion, thereby obtaining a bonded light-emitting element wafer.

2. In the step of creating the removal map data, acquiring a photoluminescence spectrum of the bonded wafer, and creating first map data regarding the defective portion using a peak wavelength, a peak intensity, and / or a peak half-width as a criterion; taking an image of the bonded wafer from the bonded substrate side with a CCD camera, and creating second map data relating to the defective portion based on the color tone of the image obtained by the image taking; irradiating a surface of the light-emitting element structure of the bonded wafer with a topology detection laser beam from an oblique direction to acquire topology data, and creating topology map data relating to the defective portion based on the topology data; 2. The method for manufacturing a junction type light-emitting element wafer according to claim 1, wherein removal map data for the defective portion is created using the first map data, the second map data, and the topology map data.

3. 2. The method for producing a bonded light-emitting element wafer according to claim 1, further comprising a step of performing element separation processing after the step of obtaining the bonded light-emitting element wafer.

4. 2. The method for manufacturing a bonded light-emitting element wafer according to claim 1, further comprising the step of performing element separation processing on the light-emitting element structures of the bonded wafer after the step of obtaining the bonded wafer and before the step of creating the removal map data.

5. In the step of creating the removal map data, acquiring a photoluminescence spectrum of the bonded wafer, and creating first map data regarding the defective portion using a peak wavelength, a peak intensity, and / or a peak half-width as a criterion; taking an image of the bonded wafer from the bonded substrate side with a CCD camera, and creating second map data relating to the defective portion based on the color tone of the image obtained by the image taking; The die pattern surface of the light emitting element structure of the bonded wafer is photographed with a camera, and the quality is judged based on the deviation from the basic pattern, and visual inspection map data is created; 5. The method for manufacturing a junction type light-emitting element wafer according to claim 4, wherein removal map data for the defective portion is created using the first map data, the second map data, and the visual inspection map data.

6. 2. The method for manufacturing a bonded light-emitting element wafer according to claim 1, wherein the removal laser beam has a wavelength of more than 360 nm and not more than 680 nm.

7. 2. The method for manufacturing a bonded type light-emitting element wafer according to claim 1, wherein the removal laser light is incident from the light-emitting element structure side or the bonded substrate side.

8. 2. The method for manufacturing a bonded light-emitting element wafer according to claim 1, wherein the adhesive is selected from the group consisting of benzocyclobutene, silicone resin, epoxy resin, SOG, polyimide, and amorphous fluorine-based resin.

9. 2. The method of manufacturing a bonded light-emitting device wafer according to claim 1, further comprising the step of: coating a protective material on the light-emitting device structure before removing the portion of the light-emitting device structure that is included in the defective portion.

10. 10. The method for manufacturing a junction-type light-emitting element wafer according to claim 9, wherein the protective material is a protective material containing polyvinyl acetate or a protective material containing polyvinyl alcohol.

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