Substrate Processing Equipment

Abstract

To provide a substrate processing device capable of modifying a substrate surface under reduced pressure and cleaning the substrate surface under reduced pressure without breaking the vacuum.SOLUTION: A substrate processing device 1 includes a surface modification unit 34, a dry cleaning unit 33, and a joining unit 36. The surface modification unit 34 modifies a surface of a substrate with plasma under reduced pressure. The dry cleaning unit performs a dry cleaning of the surface by irradiating the surface of the substrate with gas clusters under reduced pressure at least one of before and after the modification. The bonding unit 36 joins the substrates with their surfaces facing each other after the modification and the dry-cleaning.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus. [Background technology]

[0002] The bonding system described in Patent Document 1 includes a substrate transfer device, a surface modification device, a load lock chamber, a surface hydrophilization device, and a bonding device. The substrate transfer device transfers a first substrate and a second substrate in a normal pressure atmosphere. The surface modification device modifies the surfaces of the first substrate and the second substrate to be bonded in a reduced pressure atmosphere. The load lock chamber transfers the first substrate and the second substrate between the substrate transfer device and the surface modification device, and the atmosphere within the chamber can be switched between atmospheric and reduced pressure. The surface hydrophilization device hydrophilizes the modified surfaces of the first substrate and the second substrate. The bonding device bonds the hydrophilized first substrate and the second substrate using intermolecular forces. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2018-10921 Summary of the Invention [Problem to be solved by the invention]

[0004] One aspect of the present disclosure provides a technique for modifying a substrate surface under reduced pressure and cleaning a substrate surface under reduced pressure without breaking the vacuum. [Means for solving the problem]

[0005] A substrate processing apparatus according to one aspect of the present disclosure includes: The system includes a mounting section on which a cassette containing substrates is mounted, a first atmospheric pressure transport section for transporting the substrates under atmospheric pressure, a load lock section for switching the ambient atmosphere of the substrate between an atmospheric pressure atmosphere and a reduced pressure atmosphere, a reduced pressure transport section for transporting the substrates under reduced pressure, a surface modification section for modifying the surface of the substrate with plasma under reduced pressure, a dry cleaning section for dry cleaning the surface by irradiating the surface of the substrate with gas clusters under reduced pressure at least before or after the modification, a bonding section for bonding the substrates with the surfaces facing each other after the modification and the dry cleaning, and a control section. The first atmospheric pressure transport section is disposed between the mounting section and the load lock section and adjacent to the mounting section and the load lock section. The reduced pressure transport section is disposed adjacent to the surface modification section, the dry cleaning section, and the load lock section. The control unit controls the first atmospheric pressure transfer unit to transfer the substrate from the placement unit to the load lock unit, the reduced pressure transfer unit to remove the substrate from the load lock unit, transport it to the surface modification unit and the dry cleaning unit in the desired order, and return it to the load lock unit, and the first atmospheric pressure transfer unit to remove the substrate from the load lock unit. [Effects of the Invention]

[0006] According to one aspect of the present disclosure, it is possible to modify the substrate surface under reduced pressure and clean the substrate surface under reduced pressure without breaking the vacuum. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a plan view showing a substrate processing system according to an embodiment, and is a cross-sectional view taken along line II in FIG. [Figure 2] FIG. 2 is a plan view showing a substrate processing system according to an embodiment, and is a cross-sectional view taken along line II-II in FIG. [Figure 3] FIG. 3 is a plan view showing a substrate processing system according to an embodiment, and is a cross-sectional view taken along line III-III in FIG. [Figure 4] FIG. 4 is a view of the substrate processing system according to an embodiment as viewed from the positive X-axis direction. [Figure 5] FIG. 5 is a side view showing the first substrate and the second substrate according to one embodiment. [Figure 6] FIG. 6 is a flowchart showing a substrate processing method according to an embodiment. [Figure 7] FIG. 7 is a plan view showing a substrate processing system according to a first modified example. [Figure 8] FIG. 8 is a plan view showing a substrate processing system according to a second modified example. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In each drawing, the same or corresponding components are denoted by the same reference numerals, and their description may be omitted. Furthermore, the X-axis, Y-axis, and Z-axis directions are perpendicular to each other, the X-axis and Y-axis directions are horizontal, and the Z-axis direction is vertical.

[0009] In this specification, "normal pressure" refers to a pressure of 80 kPa to 120 kPa, and "reduced pressure" refers to a pressure of 0 Pa to 1 kPa. The "normal pressure atmosphere" and "reduced pressure atmosphere" may be an air atmosphere or an inert atmosphere. The inert atmosphere contains nitrogen gas or a rare gas. The rare gas is, for example, argon gas.

[0010] First, a substrate processing system 1 according to one embodiment will be described with reference to Figures 1 to 4. The substrate processing system 1 bonds a first substrate W1 and a second substrate W2 together to produce a laminated substrate T (see Figure 5).

[0011] At least one of the first substrate W1 and the second substrate W2 is a semiconductor substrate, such as a silicon wafer or a compound semiconductor wafer, on which a plurality of devices are formed. The devices include electronic circuits. One of the first substrate W1 and the second substrate W2 may be a bare wafer on which no devices are formed. The first substrate W1 and the second substrate W2 have approximately the same diameter. The compound semiconductor wafer is not particularly limited, but may be, for example, a GaAs wafer, a SiC wafer, a GaN wafer, or an InP wafer. Note that a glass substrate may be used instead of the semiconductor substrate.

[0012] Of the surfaces of the first substrate W1, the surface that is bonded to the second substrate W2 will be referred to as the "bonding surface W1j," and the surface opposite the bonding surface W1j will be referred to as the "non-bonding surface W1n." Furthermore, of the surfaces of the second substrate W2, the surface that is bonded to the first substrate W1 will be referred to as the "bonding surface W2j," and the surface opposite the bonding surface W2j will be referred to as the "non-bonding surface W2n."

[0013] 1 and 2, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are arranged side by side in this order along the positive direction of the X-axis. The loading / unloading station 2 and the processing station 3 are integrally connected.

[0014] The carry-in / out station 2 includes a mounting table 10 and a first normal pressure transfer device 20. Cassettes C1, C2, and C3, each containing a plurality of substrates (e.g., 25 substrates) in a horizontal position, are placed on the mounting table 10. Cassette C1 is a cassette that contains a first substrate W1, cassette C2 is a cassette that contains a second substrate W2, and cassette C3 is a cassette that contains a superimposed substrate T. In cassettes C1 and C2, the first substrate W1 and the second substrate W2 are housed with their respective bonding surfaces W1j and W2j facing upward and oriented in the same direction.

[0015] The first atmospheric pressure transfer device 20 transfers, under atmospheric pressure, the first substrate W1, the second substrate W2, or the laminated substrate T. The first atmospheric pressure transfer device 20 is disposed between the mounting table 10 and a load lock device 31, which will be described later, and is disposed adjacent to the mounting table 10 and the load lock device 31.

[0016] The first atmospheric pressure transfer device 20 has a transfer path 20a extending in the Y-axis direction and a transfer arm 20b that is movable along this transfer path 20a. The transfer arm 20b is movable not only in the Y-axis direction but also in the X-axis direction and is also rotatable around the Z-axis. The transfer arm 20b holds the first substrate W1, the second substrate W2, or the overlapped substrate T. There may be more than one transfer arm 20b. The transfer arm 20b transfers the first substrate W1, the second substrate W2, or the overlapped substrate T to a predetermined device adjacent to the transfer path 20a. The transfer path 20a is in an atmospheric pressure atmosphere.

[0017] The number of cassettes C1 to C3 placed on the mounting table 10 is not limited to that shown in the figure. In addition to the cassettes C1, C2, and C3, a cassette for recovering defective substrates may also be placed on the mounting table 10.

[0018] The processing station 3 is provided with, for example, four processing blocks G1 to G4. The first processing block G1 is disposed adjacent to the first atmospheric pressure transfer device 20. On the opposite side of the first processing block G1 from the first atmospheric pressure transfer device 20 (the positive X-axis side), the second processing block G2, the third processing block G3, and the fourth processing block G4 are disposed in this order along the negative Y-axis direction. Note that the first processing block G1 is part of the processing station 3, but may also be part of the loading / unloading station 2.

[0019] 2 and 3, the first processing block G1 is provided with, for example, a load lock device 31, a first transition device 41, a first alignment device 42, a second alignment device 43, a second transition device 44, and a buffer device 45 (see FIG. 1). Note that the arrangement and number of devices in the first processing block G1 are not particularly limited.

[0020] 2, the load lock device 31 is disposed between the first atmospheric pressure transfer device 20 and the reduced pressure transfer device 32. The load lock device 31 is adjacent to the first atmospheric pressure transfer device 20 and the reduced pressure transfer device 32, and serves as a transition device that relays the first substrate W1 or the second substrate W2 between the first atmospheric pressure transfer device 20 and the reduced pressure transfer device 32.

[0021] The load lock device 31 switches the ambient atmosphere of the first substrate W1 or the second substrate W2 between a normal pressure atmosphere and a reduced pressure atmosphere. The load lock device 31 has a processing vessel that defines a load lock chamber therein, and a pressure adjustment mechanism that adjusts the pressure in the load lock chamber. A mounting table on which the first substrate W1 or the second substrate W2 is placed is provided in the load lock chamber. The pressure adjustment mechanism has, for example, an exhaust mechanism that exhausts gas from the load lock chamber, and an air supply mechanism that supplies gas to the load lock chamber. The pressure adjustment mechanism switches the atmosphere in the load lock chamber between a normal pressure atmosphere and a reduced pressure atmosphere.

[0022] By disposing the load lock device 31 between the second normal pressure transfer device 50 and the reduced pressure transfer device 32, it is possible to maintain a reduced pressure atmosphere in each of the processing chambers of the reduced pressure transfer device 32, the dry cleaning device 33, and the surface modification device 34. The reduced pressure transfer device 32 is adjacent to the load lock device 31, the dry cleaning device 33, and the surface modification device 34, and transfers the first substrate W1 or the second substrate W2 to these devices 31, 33, and 34 under reduced pressure.

[0023] 3, the first transition device 41 relays the first substrate W1, the second substrate W2, or the laminated substrate T between the first atmospheric pressure transfer device 20 and a second atmospheric pressure transfer device 50 described later. A plurality of first transition devices 41 may be stacked in the vertical direction.

[0024] The first alignment device 42 adjusts the horizontal orientation of the first substrate W1 by rotating the first substrate W1 around a vertical axis. For example, the first alignment device 42 detects the notch of the first substrate W1 while rotating the first substrate W1 around the vertical axis, thereby orienting the notch of the first substrate W1 in a predetermined direction. The first alignment device 42 also turns the first substrate W1 upside down so that the bonding surface W1j of the first substrate W1 faces downward.

[0025] The second alignment device 43 adjusts the horizontal orientation of the second substrate W2 by rotating the second substrate W2 around a vertical axis. For example, the second alignment device 43 detects the notch of the second substrate W2 while rotating the second substrate W2 around the vertical axis, thereby orienting the notch of the second substrate W2 in a predetermined direction. The second alignment device 43 keeps the bonding surface W2j of the second substrate W2 facing upward.

[0026] The first transition device 41, the first alignment device 42, and the second alignment device 43 may be stacked. The stacking order is not particularly limited. The first alignment device 42 and the second alignment device 43 may be built into the bonding device 36, which will be described later.

[0027] 2, the second transition device 44 relays the first substrate W1, the second substrate W2, or the laminated substrate T between the first atmospheric pressure transfer device 20 and an internal transfer device 60 of the bonding device 36, which will be described later. Multiple second transition devices 44 may be stacked vertically. Note that if the bonding device 36 does not have an internal transfer device 60, the second transition device 44 is not necessary.

[0028] The buffer device 45 (see FIG. 1) temporarily accommodates the first substrate W1, the second substrate W2, or the overlapping substrate T. A plurality of buffer devices 45 may be stacked vertically. In this embodiment, the buffer device 45 is disposed above the second transition device 44, but the location thereof is not particularly limited.

[0029] 2 and 4, the second processing block G2 is provided with, for example, a reduced-pressure transport device 32, a surface modification device 34, and a surface hydrophilization device 35. As shown in FIG. 4, the reduced-pressure transport device 32 and the surface modification device 34 are arranged on different levels from the surface hydrophilization device 35. For example, the reduced-pressure transport device 32 and the surface modification device 34 are arranged on a lower level, and the surface hydrophilization device 35 is arranged on an upper level. This arrangement may be reversed, that is, the reduced-pressure transport device 32 and the surface modification device 34 may be arranged on an upper level, and the surface hydrophilization device 35 may be arranged on a lower level. The arrangement and number of devices in the second processing block G2 are not particularly limited.

[0030] The reduced-pressure transfer device 32 (see FIG. 2) transfers the first substrate W1 or the second substrate W2 under reduced pressure. The reduced-pressure transfer device 32 is disposed adjacent to the load lock device 31, the dry cleaning device 33, and the surface modification device 34. The reduced-pressure transfer device 32 has a reduced-pressure chamber 32a and a transfer arm 32b. The reduced-pressure chamber 32a is connected to the load lock device 31, the dry cleaning device 33, and the surface modification device 34 via different gate valves GV. The transfer arm 32b holds the first substrate W1 or the second substrate W2. The transfer arm 32b is disposed so as to be movable vertically and horizontally and rotatable about a vertical axis. The transfer arm 32b transfers the first substrate W1 or the second substrate W2 to a predetermined device adjacent to the reduced-pressure chamber 32a. There may be more than one transfer arm 32b.

[0031] The surface modification device 34 (see FIG. 2) modifies the bonding surface W1j of the first substrate W1 or the bonding surface W2j of the second substrate W2 with plasma under reduced pressure. For example, the surface modification device 34 breaks SiO bonds on the bonding surfaces W1j and W2j, forming dangling Si bonds and enabling subsequent hydrophilization. In the surface modification device 34, oxygen gas, which is a processing gas, is excited to plasma and ionized under reduced pressure, for example. The oxygen ions are irradiated onto the bonding surfaces W1j and W2j, thereby subjecting the bonding surfaces W1j and W2j to plasma processing and modification. The processing gas is not limited to oxygen gas and may be, for example, nitrogen gas.

[0032] The surface hydrophilization device 35 (see FIG. 4) provides OH groups to the bonding surface W1j of the first substrate W1 or the bonding surface W2j of the second substrate W2 under normal pressure. The surface hydrophilization device 35 supplies pure water (e.g., deionized water) onto the first substrate W1 or the second substrate W2 while rotating the first substrate W1 or the second substrate W2 held by, for example, a spin chuck. The pure water diffuses over the bonding surfaces W1j, W2j by centrifugal force, providing OH groups to dangling Si bonds and hydrophilizing the bonding surfaces W1j, W2j. The surface hydrophilization device 35 also serves to clean the bonding surfaces W1j, W2j.

[0033] As shown in FIG. 4, the third processing block G3 is provided with, for example, a dry cleaning apparatus 33 and a second atmospheric pressure transfer apparatus 50. The dry cleaning apparatus 33 and the second atmospheric pressure transfer apparatus 50 are arranged on different levels. For example, the dry cleaning apparatus 33 is arranged on a lower level, and the second atmospheric pressure transfer apparatus 50 is arranged on an upper level. The arrangement may be reversed, with the dry cleaning apparatus 33 arranged on an upper level, and the second atmospheric pressure transfer apparatus 50 arranged on a lower level. It is sufficient that the dry cleaning apparatus 33 is arranged on the same level as the reduced-pressure transfer apparatus 32 and the surface modification apparatus 34. The arrangement and number of apparatuses in the third processing block G3 are not particularly limited.

[0034] The dry cleaning apparatus 33 dry-cleans the bonding surfaces W1j, W2j of the first substrate W1 or the second substrate W2 by irradiating the bonding surface W1j, W2j of the second substrate W2 with gas clusters under reduced pressure. The dry cleaning apparatus 33 includes a processing vessel having a processing chamber formed therein that is depressurized to a pressure lower than atmospheric pressure, a holder that holds the substrate in the processing chamber, and a nozzle that sprays gas toward the surface of the substrate held by the holder. The gas includes a source gas. The source gas is sprayed from the nozzle and adiabatically expands in the pre-depressurized processing chamber, thereby being cooled to a condensation temperature and forming gas clusters, which are aggregates of molecules or atoms. The source gas includes, for example, at least one selected from carbon dioxide (CO2) gas and argon (Ar) gas.

[0035] The gas may contain a carrier gas in addition to the source gas. The carrier gas reduces the partial pressure of the source gas, thereby suppressing liquefaction of the source gas inside the nozzle. The carrier gas also increases the gas supply pressure to the nozzle to a desired pressure, thereby increasing the acceleration of the source gas and promoting the growth of gas clusters. The carrier gas has a smaller molecular weight or atomic weight than the source gas. Therefore, the carrier gas has a higher condensation temperature than the source gas. Therefore, the carrier gas does not form gas clusters. The carrier gas includes, for example, at least one selected from hydrogen (H2) gas and helium (He) gas.

[0036] The gas clusters collide with particles adhering to the bonding surfaces W1j and W2j and blow them away. The gas clusters do not have to collide directly with the particles. They can also blow away particles around the collision point. The gas clusters become very hot upon collision, so they break down into pieces and are exhausted from the exhaust port of the processing vessel. The blown-away particles are also discharged from the exhaust port of the processing vessel.

[0037] The dry cleaning device 33 irradiates the bonding surfaces W1j and W2j with gas clusters perpendicularly. Multiple electronic circuits and concave-convex patterns are pre-formed on the bonding surfaces W1j and W2j. By irradiating the bonding surfaces W1j and W2j with gas clusters perpendicularly, it is possible to prevent the concave-convex pattern from collapsing due to the collision of gas clusters, and it is also possible to remove particles not only from the convex portions but also from inside the concave portions.

[0038] In recent years, electronic circuits have become increasingly miniaturized. Cleaning the substrate surface by irradiating it with gas clusters can prevent the collapse of the fine uneven patterns formed on the substrate surface and can also remove particles that have entered narrow recesses. Furthermore, because this is dry cleaning rather than wet cleaning, the process of drying the substrate surface can be omitted. Furthermore, because this is dry cleaning rather than wet cleaning, dry cleaning and surface modification of the bonding surfaces W1j and W2j can be performed consecutively without breaking the vacuum.

[0039] The second atmospheric pressure transfer device 50 has a transfer path 50a extending in the X-axis direction and a transfer arm 50b that is movable along this transfer path 50a. The transfer arm 50b is movable not only in the X-axis direction but also in the Y-axis direction and is also rotatable around the Z-axis. The transfer arm 50b holds the first substrate W1, the second substrate W2, or the overlapped substrate T. There may be more than one transfer arm 50b. The transfer arm 50b transfers the first substrate W1, the second substrate W2, or the overlapped substrate T to a predetermined device adjacent to the transfer path 50a. The transfer path 50a is in an atmospheric pressure atmosphere.

[0040] 2, the fourth processing block G4 is provided with, for example, a bonding device 36. The arrangement and number of devices in the fourth processing block G4 are not particularly limited.

[0041] The bonding device 36 bonds the first substrate W1 and the second substrate W2 under normal pressure with the bonding surfaces W1j and W2j facing each other, to produce a laminated substrate T. During bonding, the first substrate W1 is placed above the second substrate W2. The first substrate W1 is previously turned upside down, so that the bonding surface W1j of the first substrate W1 faces downward, and the bonding surface W2j of the second substrate W2 faces upward.

[0042] The bonding device 36 first deforms at least one of the first substrate W1 and the second substrate W2 to bring the central portions of the bonding surfaces W1j and W2j into contact with each other. Then, the bonding device 36 expands the contact area of ​​the bonding surfaces W1j and W2j from the radially inner side to the radially outer side, so that the entire surfaces of the bonding surfaces W1j and W2j come into contact with each other.

[0043] Because the bonding surfaces W1j and W2j have been modified, van der Waals forces (intermolecular forces) are generated between the bonding surfaces W1j and W2j, bonding the bonding surfaces W1j and W2j together. Furthermore, because the bonding surfaces W1j and W2j have been hydrophilized, hydrophilic groups (e.g., OH groups) form hydrogen bonds, firmly bonding the bonding surfaces W1j and W2j together.

[0044] The bonding apparatus 36 may have an internal transfer device 60. The internal transfer device 60 has a transfer path 60a extending in the X-axis direction and a transfer arm 60b that is movable along the transfer path 60a. The transfer arm 60b holds the first substrate W1, the second substrate W2, or the overlapped substrate T. The transfer arm 60b transfers the first substrate W1, the second substrate W2, or the overlapped substrate T to predetermined devices provided at both ends of the transfer path 60a in the X-axis direction. The transfer path 60a is in a normal pressure atmosphere. The internal transfer device 60 is not necessarily required, but the presence of the internal transfer device 60 can improve throughput.

[0045] The substrate processing system 1 includes a control device 90. The control device 90 is, for example, a computer, and includes a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory. The storage medium 92 stores programs that control various processes executed in the substrate processing system 1. The control device 90 controls the operation of the substrate processing system 1 by having the CPU 91 execute the programs stored in the storage medium 92.

[0046] Next, a substrate processing method according to one embodiment will be described with reference to Figure 6. The substrate processing method includes, for example, steps S101 to S107. Steps S101 to S107 are performed under the control of control device 90. Note that the substrate processing method does not necessarily include all of steps S101 to S107. For example, the substrate processing method may include at least one of steps S102 and S104. Furthermore, the substrate processing method may include processes other than steps S101 to S107.

[0047] First, cassette C1 containing a plurality of first substrates W1, cassette C2 containing a plurality of second substrates W2, and empty cassette C3 are placed on table 10 of carry-in / out station 2.

[0048] Next, the first atmospheric pressure transfer device 20 takes out the first substrate W1 from the cassette C1 and transfers it to the load lock device 31 in the first processing block G1.

[0049] Next, the load lock device 31 switches the ambient atmosphere of the first substrate W1 from a normal pressure atmosphere to a reduced pressure atmosphere (step S101). Thereafter, the reduced pressure transfer device 32 takes out the first substrate W1 from the load lock device 31 and transfers it to the dry cleaning device 33. The reduced pressure transfer device 32 transfers the first substrate W1 under reduced pressure.

[0050] Next, the dry cleaning apparatus 33 irradiates the bonding surface W1j of the first substrate W1 with gas clusters under reduced pressure to dry clean the bonding surface W1j (step S102). Before the surface modification (step S103), the cleanliness of the bonding surface W1j can be improved in the reduced pressure atmosphere without breaking the vacuum, thereby improving the effect of the surface modification. Thereafter, the reduced pressure transfer apparatus 32 removes the first substrate W1 from the dry cleaning apparatus 33 and transfers it to the surface modification apparatus 34.

[0051] Next, the surface modification device 34 modifies the bonding surface W1j of the first substrate W1 with plasma under reduced pressure (step S103). This allows for the subsequent addition of OH groups (step S106). After the surface modification (step S103), the reduced-pressure transfer device 32 removes the first substrate W1 from the surface modification device 34 and transfers it to the dry cleaning device 33.

[0052] Next, the dry cleaning apparatus 33 irradiates the bonding surface W1j of the first substrate W1 with gas clusters under reduced pressure, thereby dry-cleaning the bonding surface W1j (step S104). After the surface modification (step S103), the cleanliness of the bonding surface W1j can be improved in the reduced pressure atmosphere without breaking the vacuum, thereby improving the effect of the surface modification. Thereafter, the reduced pressure transfer apparatus 32 removes the first substrate W1 from the dry cleaning apparatus 33 and transfers it to the load lock apparatus 31.

[0053] Next, the load lock device 31 switches the ambient atmosphere of the first substrate W1 from a reduced pressure atmosphere to an atmospheric pressure atmosphere (step S105). Thereafter, the first atmospheric pressure transfer device 20 takes out the first substrate W1 from the load lock device 31 and transfers it to the first transition device 41. Subsequently, the second atmospheric pressure transfer device 50 takes out the first substrate W1 from the first transition device 41 and transfers it to the surface hydrophilization device 35.

[0054] Next, the surface hydrophilization device 35 provides OH groups to the bonding surface W1j of the first substrate W1 under normal pressure (step S106). Thereafter, the second normal pressure transfer device 50 takes out the first substrate W1 from the surface hydrophilization device 35 and transfers it to the first alignment device 42.

[0055] The first alignment device 42 adjusts the horizontal orientation of the first substrate W1 by rotating the first substrate W1 around a vertical axis, and also turns the first substrate W1 upside down so that the bonding surface W1j of the first substrate W1 faces downward. Thereafter, the second normal pressure transfer device 50 takes the first substrate W1 out of the first alignment device 42 and transfers it to the bonding device 36.

[0056] The transport path of the first substrate W1 from the surface hydrophilization device 35 to the bonding device 36 is not limited to the above-described transport path. For example, the first alignment device 42 may be built into the bonding device 36. Furthermore, the second atmospheric pressure transfer device 50 may transport the first substrate W1 removed from the surface hydrophilization device 35 to the first transition device 41. Thereafter, the first atmospheric pressure transfer device 20 removes the first substrate W1 from the first transition device 41 and transfers it to the second transition device 44. Thereafter, the internal transfer device 60 of the bonding device 36 removes the first substrate W1 from the second transition device 44 and transfers it to the first chuck of the bonding device 36. The first chuck horizontally suction-holds the first substrate W1 from above with the bonding surface W1j of the first substrate W1 facing downward.

[0057] In parallel with the above-described processing (steps S101 to S106) for the first substrate W1, similar processing (steps S101 to S106) is performed for the second substrate W2. After the second substrate W2 has been given OH groups in the surface hydrophilization device 35, it is transported by the second atmospheric pressure transfer device 50 to the second alignment device 43 and the bonding device 36, in that order. The second alignment device 43 may be built into the bonding device 36. The second atmospheric pressure transfer device 50 may also transport the second substrate W2 removed from the surface hydrophilization device 35 to the first transition device 41. Thereafter, the first atmospheric pressure transfer device 20 removes the second substrate W2 from the first transition device 41 and transports it to the second transition device 44. Thereafter, the internal transfer device 60 of the bonding device 36 removes the second substrate W2 from the second transition device 44 and transports it to the second chuck of the bonding device 36. The second chuck horizontally suction-holds the second substrate W2 from below with the bonding surface W2j of the second substrate W2 facing upward.

[0058] Next, the bonding device 36 bonds the first substrate W1 and the second substrate W2 to produce a laminated substrate T (step S107). During bonding, the first substrate W1 is placed above the second substrate W2. The first substrate W1 is previously turned upside down, so that the bonding surface W1j of the first substrate W1 faces downward. The bonding surface W2j of the second substrate W2 faces upward.

[0059] Thereafter, the internal transfer device 60 removes the laminated substrate T from the bonding device 36 and transfers it to the second transition device 44. Finally, the first atmospheric pressure transfer device 20 removes the laminated substrate T from the second transition device 44 and transfers it to the cassette C3 on the mounting table 10. This completes the series of processes.

[0060] The transport path of the laminated substrate T from the bonding device 36 to the cassette C3 is not limited to the above-described transport path. For example, the internal transport device 60 of the bonding device 36 may be omitted. In this case, the second atmospheric pressure transport device 50 removes the laminated substrate T from the bonding device 36 and transports it to the first transition device 41. Finally, the first atmospheric pressure transport device 20 removes the laminated substrate T from the first transition device 41 and transports it to the cassette C3 on the mounting table 10.

[0061] Next, a substrate processing system 1 according to a first modified example will be described with reference to Fig. 7. Differences will be mainly described below. As shown in Fig. 7, the first atmospheric pressure transfer device 20 is disposed between the mounting table 10 and the first transition device 41, and is disposed adjacent to the mounting table 10 and the first transition device 41. The second atmospheric pressure transfer device 50 is disposed adjacent to the first transition device 41 and the load lock device 31. The load lock device 31 is disposed adjacent to the second atmospheric pressure transfer device 50, not the first atmospheric pressure transfer device 20.

[0062] The substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 includes a mounting table 10 and a first atmospheric pressure transfer device 20. The processing station 3 is provided with, for example, four processing blocks G1 to G4. The first processing block G1 is disposed adjacent to the first atmospheric pressure transfer device 20. On the opposite side of the first processing block G1 from the first atmospheric pressure transfer device 20 (the positive X-axis side), the second processing block G2, the third processing block G3, and the fourth processing block G4 are disposed in this order along the negative Y-axis direction.

[0063] The first processing block G1 is provided with, for example, a first transition device 41, a first alignment device 42, a second alignment device 43, a second transition device 44, and a buffer device 45. The arrangement and number of devices in the first processing block G1 are not particularly limited. The first alignment device 42 and the second alignment device 43 may be built into the bonding device 36.

[0064] In the second processing block G2, for example, a reduced pressure transfer device 32, a dry cleaning device 33, and a surface modification device 34 are arranged. The dry cleaning device 33 and the surface modification device 34 are stacked in the vertical direction and are adjacent to the same side (the side facing the negative X-axis direction) of the reduced pressure transfer device 32. In the second processing block G2, a surface hydrophilization device 35 is also arranged. Note that the arrangement and number of devices in the second processing block G2 are not particularly limited. The arrangement of the dry cleaning device 33 and the surface modification device 34 may be reversed.

[0065] The third processing block G3 is arranged with, for example, a second atmospheric pressure transfer device 50 and a load lock device 31. The load lock device 31 is arranged on the opposite side (the positive X-axis direction side) of the first transition device 41 across the second atmospheric pressure transfer device 50. The second atmospheric pressure transfer device 50 is arranged adjacent to the first transition device 41, the first alignment device 42, the second alignment device 43, the load lock device 31, the surface hydrophilization device 35, and the bonding device 36.

[0066] In the fourth processing block G4, for example, a bonding device 36 is arranged. The bonding device 36 may have an internal transfer device 60. The arrangement and number of devices in the fourth processing block G4 are not particularly limited.

[0067] Next, the operation of the substrate processing system 1 according to the first modified example will be described with reference to Fig. 6 again. First, the cassette C1 containing a plurality of first substrates W1, the cassette C2 containing a plurality of second substrates W2, and the empty cassette C3 are placed on the mounting table 10 of the loading / unloading station 2.

[0068] Next, the first atmospheric pressure transfer device 20 removes the first substrate W1 from the cassette C1 and transfers it to the first transition device 41 in the first processing block G1. Thereafter, the second atmospheric pressure transfer device 50 removes the first substrate W1 from the first transition device 41 and transfers it to the load lock device 31.

[0069] Next, the load lock device 31 switches the ambient atmosphere of the first substrate W1 from a normal pressure atmosphere to a reduced pressure atmosphere (step S101). Thereafter, the reduced pressure transfer device 32 takes out the first substrate W1 from the load lock device 31 and transfers it to the dry cleaning device 33. The reduced pressure transfer device 32 transfers the first substrate W1 under reduced pressure.

[0070] Next, the dry cleaning device 33 irradiates the bonding surface W1j of the first substrate W1 with gas clusters under reduced pressure to dry clean the bonding surface W1j (step S102). Thereafter, the reduced-pressure transfer device 32 removes the first substrate W1 from the dry cleaning device 33 and transfers it to the surface modification device 34.

[0071] Next, the surface modification device 34 modifies the bonding surface W1j of the first substrate W1 with plasma under reduced pressure (step S103). Thereafter, the reduced-pressure transfer device 32 removes the first substrate W1 from the surface modification device 34 and transfers it to the dry cleaning device 33.

[0072] Next, the dry cleaning apparatus 33 irradiates the bonding surface W1j of the first substrate W1 with gas clusters under reduced pressure to dry clean the bonding surface W1j (step S104). Thereafter, the reduced-pressure transfer apparatus 32 removes the first substrate W1 from the dry cleaning apparatus 33 and transfers it to the load lock apparatus 31.

[0073] Next, the load lock device 31 switches the ambient atmosphere around the first substrate W1 from a reduced pressure atmosphere to an atmospheric pressure atmosphere (step S105). Thereafter, the second atmospheric pressure transfer device 50 takes out the first substrate W1 from the load lock device 31 and transfers it to the surface hydrophilization device 35. Thereafter, steps S106 to S107 are performed.

[0074] The transport path of the first substrate W1 from the surface hydrophilization device 35 to the bonding device 36 is the same as the transport path in the above embodiment, and therefore its description will be omitted. In addition, the transport path of the laminated substrate T from the bonding device 36 to the cassette C3 is also the same as the transport path in the above embodiment, and therefore its description will be omitted.

[0075] Next, a substrate processing system 1 according to a second modification will be described with reference to Fig. 8. In the first modification, in the second processing block G2, the dry cleaning apparatus 33 and the surface modification apparatus 34 are stacked in the vertical direction and are adjacent to the same side (the side on the negative X-axis direction) of the reduced-pressure transfer apparatus 32. In this modification, the dry cleaning apparatus 33 is provided outside the rectangular parallelepiped processing station 3, and the dry cleaning apparatus 33 and the surface modification apparatus 34 are adjacent to different sides of the reduced-pressure transfer apparatus 32.

[0076] The dry cleaning devices 33 are stacked vertically outside the processing station 3 and adjacent to the same side (the side on the positive Y-axis direction) of the reduced-pressure transport device 32. The surface modification devices 34 are stacked vertically inside the processing station 3 and adjacent to the same side (the side on the negative X-axis direction) of the reduced-pressure transport device 32.

[0077] The dry cleaning device 33 and the surface modification device 34 may be arranged in reverse. The dry cleaning device 33 may be arranged inside the processing station 3, and the surface modification device 34 may be arranged outside the processing station 3.

[0078] The operation of the substrate processing system 1 according to the second modified example is similar to the operation of the substrate processing system 1 according to the first modified example, and therefore a description thereof will be omitted.

[0079] Although the embodiments of the substrate processing apparatus according to the present disclosure have been described above, the present disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These naturally fall within the technical scope of the present disclosure. [Explanation of symbols]

[0080] 1. Substrate processing system (substrate processing equipment) 33 Dry cleaning device (dry cleaning section) 34 Surface modification equipment (surface modification section) 36 Joining device (joint part) W1 First board W2 Second board

Claims

1. A mounting section on which a cassette containing substrates is mounted; a first atmospheric pressure transfer unit that transfers the substrate under atmospheric pressure; a load lock unit that switches the ambient atmosphere of the substrate between a normal pressure atmosphere and a reduced pressure atmosphere; a reduced pressure transport unit that transports the substrate under reduced pressure; a surface modification unit that modifies the surface of the substrate with plasma under reduced pressure; a dry cleaning unit that dry-cleans the surface of the substrate by irradiating the surface with gas clusters under reduced pressure at least one time before and after the modification; a bonding section that bonds the substrates together with the surfaces facing each other after the modification and the dry cleaning; A control unit; Equipped with the first atmospheric pressure transfer unit is disposed between the placement unit and the load lock unit and adjacent to the placement unit and the load lock unit, the reduced pressure transfer unit is disposed adjacent to the surface modification unit, the dry cleaning unit, and the load lock unit; The control unit controls the first atmospheric pressure transfer unit to transfer the substrate from the placement unit to the load lock unit, the reduced pressure transfer unit to remove the substrate from the load lock unit, transport the substrate to the surface modification unit and the dry cleaning unit in a desired order, and return the substrate to the load lock unit, and the first atmospheric pressure transfer unit to remove the substrate from the load lock unit.

2. a second atmospheric pressure transfer section that transfers the substrate under atmospheric pressure, and a first transition section that relays the substrate between the first atmospheric pressure transfer section and the second atmospheric pressure transfer section, 2. The substrate processing apparatus of claim 1, wherein the control unit controls the first atmospheric pressure transfer unit to transfer the substrate removed from the load lock unit to the first transition unit, and the second atmospheric pressure transfer unit to remove the substrate from the first transition unit.

3. A mounting section on which a cassette containing substrates is mounted; a first atmospheric pressure transfer unit that transfers the substrate under atmospheric pressure; a second atmospheric pressure transfer unit that transfers the substrate under atmospheric pressure; a first transition section that relays the substrate between the first atmospheric pressure transfer section and the second atmospheric pressure transfer section; a load lock unit that switches the ambient atmosphere of the substrate between a normal pressure atmosphere and a reduced pressure atmosphere; a reduced pressure transport unit that transports the substrate under reduced pressure; a surface modification unit that modifies the surface of the substrate with plasma under reduced pressure; a dry cleaning unit that dry-cleans the surface of the substrate by irradiating the surface with gas clusters under reduced pressure at least one time before and after the modification; a bonding section that bonds the substrates together with the surfaces facing each other after the modification and the dry cleaning; A control unit; Equipped with the first atmospheric pressure transfer section is disposed between the placement section and the first transition section and adjacent to the placement section and the first transition section; the second atmospheric pressure transfer section is disposed adjacent to the first transition section and the load lock section, the reduced pressure transfer unit is disposed adjacent to the surface modification unit, the dry cleaning unit, and the load lock unit; The control unit controls the first atmospheric pressure transfer unit to transfer the substrate from the placement unit to the first transition unit, the second atmospheric pressure transfer unit to remove the substrate from the first transition unit and transfer it to the load lock unit, the reduced pressure transfer unit to remove the substrate from the load lock unit and transport it to the surface modification unit and the dry cleaning unit in a desired order and return it to the load lock unit, and the second atmospheric pressure transfer unit to remove the substrate from the load lock unit.

4. a second transition section adjacent to the first atmospheric pressure conveying section; the bonding unit has an internal transport unit that transports the substrate, 4. The substrate processing apparatus according to claim 1, wherein the second transition section relays the substrate between the first atmospheric pressure transfer section and the internal transfer section.

5. A mounting section on which a cassette containing substrates is mounted; a first atmospheric pressure transfer unit that transfers the substrate under atmospheric pressure; a second transition section adjacent to the first atmospheric pressure conveying section; a surface modification unit that modifies the surface of the substrate with plasma under reduced pressure; a dry cleaning unit that dry-cleans the surface of the substrate by irradiating the surface with gas clusters under reduced pressure at least one time before and after the modification; a bonding section that bonds the substrates together with the surfaces facing each other after the modification and the dry cleaning; Equipped with the bonding unit has an internal transport unit that transports the substrate, The second transition section relays the substrate between the first atmospheric pressure transfer section and the internal transfer section.

6. a surface modification unit that modifies the surface of the substrate with plasma under reduced pressure; a dry cleaning unit that dry-cleans the surface of the substrate by irradiating the surface with gas clusters under reduced pressure at least one time before and after the modification; a bonding section that bonds the substrates together with the surfaces facing each other after the modification and the dry cleaning; Equipped with The substrate processing apparatus, wherein the surface modification unit and the dry cleaning unit are stacked in a vertical direction.

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