Substrate processing apparatus and substrate processing method

Abstract

A substrate processing device removes the peripheral edge section of a film formed on an upper surface of a substrate. This substrate processing device comprises: a substrate rotating part which horizontally holds and rotates the substrate; a first nozzle which supplies, toward the substrate, a first processing fluid for hindering the removal of the film, from above the substrate held by the substrate rotating part; a second nozzle which supplies, toward the substrate, a second processing fluid for removing the film, from below the substrate held by the substrate rotating part; and a control unit which controls the rotation of the substrate, the supply of the first processing fluid, and the supply of the second processing fluid. The control unit, while the substrate is rotated at a first rotation speed by the substrate rotation part, supplies the first processing fluid by means of the first nozzle, and supplies the second processing fluid by means of the second nozzle, thereby performing control for removing the peripheral edge section of the film.

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] The substrate processing apparatus described in Patent Document 1 removes the peripheral edge of a film formed on the upper surface of a substrate. The upper surface of the substrate has a horizontal surface and a bevel surface provided outside the horizontal surface. A chemical solution is supplied to the horizontal surface of the upper surface of the rotating substrate, and then flows radially outward due to centrifugal force, removing the peripheral edge of the film. On the upper surface of the substrate, a boundary is formed between a covered portion where the film remains and an exposed portion where the film is removed. The exposed portion is formed radially outward of the covered portion. The boundary between the covered portion and the exposed portion exists on the horizontal surface (see Figure 11 of Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2017-183498 Summary of the Invention [Problem to be solved by the invention]

[0004] One aspect of the present disclosure provides a technique for reducing the width of an exposed portion of the upper surface of a substrate when viewed from above. [Means for solving the problem]

[0005] A substrate processing apparatus according to one aspect of the present disclosure removes a peripheral portion of a film formed on an upper surface of a substrate. The substrate processing apparatus includes a substrate rotation unit that horizontally holds and rotates the substrate, a first nozzle that supplies a first processing liquid that inhibits removal of the film toward the substrate from above the substrate held by the substrate rotation unit, a second nozzle that supplies a second processing liquid that removes the film toward the substrate from below the substrate held by the substrate rotation unit, and a controller that controls the rotation of the substrate, the supply of the first processing liquid, and the supply of the second processing liquid. The controller controls the removal of the peripheral portion of the film by supplying the first processing liquid through the first nozzle and the second processing liquid through the second nozzle while the substrate is rotated by the substrate rotation unit at a first rotation speed. The upper surface of the substrate held by the substrate rotation unit has a horizontal plane and a beveled surface provided outside the horizontal plane, and the control unit controls the removal of the peripheral portion of the film so that the boundary between the covered portion where the film remains and the exposed portion where the film is removed remains on the beveled surface. [Effects of the Invention]

[0006] According to one aspect of the present disclosure, the width of the exposed portion of the upper surface of the substrate when viewed from above can be reduced. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment. [Figure 2] FIG. 2 is a cross-sectional view showing an example of a substrate before processing. [Figure 3] FIG. 3 is a cross-sectional view showing an example of a substrate after processing. [Figure 4] FIG. 4 is a cross-sectional view showing an example of a main part of a substrate processing apparatus. [Figure 5] FIG. 5 is a flowchart showing a substrate processing method according to an embodiment. [Figure 6] FIG. 6 is a diagram showing an example of a recipe in steps S101 to S104 of FIG. [Figure 7] FIG. 7 is a cross-sectional view showing an example of step S101 in FIG. [Figure 8] FIG. 8 is a cross-sectional view showing an example of step S102 in FIG. [Figure 9] FIG. 9 is a cross-sectional view showing an example of step S103 in FIG. [Figure 10] FIG. 10 is a diagram showing an example of the relationship between the first rotation speed and the cut width, with or without the supply of the first processing liquid. [Figure 11] FIG. 11 is a diagram illustrating an example of the imaging unit. [Figure 12] FIG. 12 is a diagram showing an example of an image captured by the imaging unit. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In each drawing, the same or corresponding components are denoted by the same reference numerals, and their description may be omitted. In this specification, the X-axis, Y-axis, and Z-axis directions are perpendicular to each other. The X-axis and Y-axis directions are horizontal directions, and the Z-axis direction is vertical.

[0009] A substrate processing apparatus 1 according to one embodiment will be described with reference to Fig. 1. The substrate processing apparatus 1 processes the substrate W by supplying a processing liquid to the substrate W while rotating the substrate W. The substrate processing apparatus 1 includes, for example, a processing container 10, a substrate rotation unit 20, a processing liquid supply unit 30, a cup 40, and a control unit 90.

[0010] An FFU (Fan Filter Unit) 11 is provided on the ceiling of the processing vessel 10. The FFU 11 forms a downflow inside the processing vessel 10. A gate 12 and a gate valve 13 that opens and closes the gate 12 are provided on the sidewall of the processing vessel 10. A substrate W is loaded into the processing vessel 10 through the gate 12 by a transfer device (not shown), processed with a processing solution inside the processing vessel 10, and then unloaded from the processing vessel 10 through the gate 12 by the transfer device.

[0011] The substrate rotation unit 20 holds and rotates the substrate W horizontally. The substrate rotation unit 20 has, for example, a holder 21, a rotation shaft 22, and a rotation drive unit 23. The holder 21 is provided inside the processing chamber 10 and holds the substrate W horizontally so that the center of the substrate W coincides with the rotation center line of the rotation shaft 22. The holder 21 adsorbs, for example, the center of the lower surface of the substrate W. The rotation drive unit 23 rotates the holder 21 around the vertical rotation shaft 22.

[0012] The processing liquid supply unit 30 supplies the processing liquid to the substrate W. The processing liquid supply unit 30 has, for example, a nozzle 31. The nozzle 31 is connected to a processing liquid supply source. The nozzle 31 is provided inside the processing vessel 10 and ejects the processing liquid onto the substrate W held by the holder 21. The nozzle 31 may be a two-fluid nozzle that ejects a mixture of liquid and gas. The nozzle 31 is movable in horizontal and vertical directions.

[0013] The cup 40 surrounds the peripheral edge of the substrate W held by the holder 21 and receives the processing liquid scattered from the peripheral edge of the substrate W. In this embodiment, the cup 40 does not rotate together with the rotation shaft 22, but may rotate together with the rotation shaft 22. A drain pipe 41 and an exhaust pipe 42 are provided at the bottom of the cup 40. The drain pipe 41 discharges liquid accumulated inside the cup 40. The exhaust pipe 42 discharges gas accumulated inside the cup 40.

[0014] The control unit 90 is, for example, a computer, and includes a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory. The storage medium 92 stores programs for controlling various processes executed in the substrate processing apparatus 1. The control unit 90 controls the operation of the substrate processing apparatus 1 by causing the CPU 91 to execute the programs stored in the storage medium 92.

[0015] The substrate processing apparatus 1 removes the peripheral portion of the film F formed on the upper surface Wa of the substrate W (see FIGS. 2 and 3). Note that in FIGS. 2 and 3, the ratio of the thickness of the film F to the thickness of the base substrate S is exaggerated compared to the actual thickness. In reality, the thickness of the film F is small, and the shape of the base substrate S determines the shape of the substrate W.

[0016] The substrate W has a substrate upper surface Wa, a substrate lower surface Wb, and a substrate peripheral edge Wc. The substrate upper surface Wa is an upward surface having a horizontal surface Wa1 and a bevel surface Wa2 provided outside the horizontal surface Wa1. The substrate lower surface Wb is a downward surface having a horizontal surface Wb1 and a bevel surface Wb2 provided outside the horizontal surface Wb1. The bevel surfaces Wa2 and Wb2 are so-called R-surfaces, but may also be so-called C-surfaces. The substrate W may have a vertical surface (not shown) at the substrate peripheral edge Wec.

[0017] The substrate W includes a base substrate S such as a silicon wafer and a film F formed on the base substrate S. The base substrate S is not limited to a silicon wafer and may be a compound semiconductor wafer or a glass substrate. The film F may be, for example, a titanium nitride film, an aluminum film, a tungsten film, a silicon nitride film, a silicon oxide film, a polysilicon film, or a thermal oxide film. The film F may be formed on both the top and bottom surfaces of the base substrate S.

[0018] Multiple films may be stacked on the base substrate S. For example, a silicon oxide film and a titanium nitride film may be deposited in this order. Alternatively, a silicon oxide film, a polysilicon film, and a tungsten film may be deposited in this order. When multiple films are stacked, the film F to be removed only needs to include the upper film, and does not necessarily need to include the lower film.

[0019] For example, when a silicon oxide film and a titanium nitride film are formed in this order, the film F to be removed may include the upper titanium nitride film, but may not include the lower silicon oxide film. Also, when a silicon oxide film, a polysilicon film, and a tungsten film are formed in this order, the film F to be removed may include the upper tungsten film, but may not include the lower polysilicon film and silicon oxide film.

[0020] The film F to be removed may be a resist film, and is not particularly limited.

[0021] An example of a main part of the substrate processing apparatus 1 will be described with reference to FIG. 4. The cup 40 has a horizontal bottom wall 43, an outer wall 44 extending upward from the periphery of the bottom wall 43, a separation wall 45 disposed inside the outer wall 44, and an inner wall 46 disposed inside the separation wall 45. The outer wall 44, the separation wall 45, and the inner wall 46 are concentrically arranged. A recess 47 for collecting liquid is formed between the outer wall 44 and the separation wall 45. The liquid collected in the recess 47 passes through a drain pipe 41 (see FIG. 1) and is discharged to the outside of the substrate processing apparatus 1. A recess 48 for collecting gas is formed between the separation wall 45 and the inner wall 46. The gas collected in the recess 48 passes through an exhaust pipe 42 (see FIG. 1) and is discharged to the outside of the substrate processing apparatus 1. The separation wall 45 separates the outer recess 47 from the inner recess 48, separating the liquid from the gas.

[0022] The outer wall 44 of the cup 40 has an inclined surface 44a that receives liquid splashed from the periphery of the substrate W. The inclined surface 44a slopes downward as it moves radially outward from the substrate W. A passage A1 for both liquid and gas is formed between the inclined surface 44a of the outer wall 44 and the upper surface of the guide wall 49. A passage A2 for gas is formed between the lower surface of the guide wall 49 and the upper surface of the separation wall 45. The guide wall 49 slopes downward as it moves radially outward from the upper end of the inner wall 46. The liquid passes through the passage A1 and is collected in the outer recess 47. The gas passes through the passages A1 and A2 and is collected in the inner recess 48.

[0023] The substrate processing apparatus 1 includes a cover 50. The cover 50 is arranged above the substrate W held by the substrate rotation unit 20 so that it can be raised and lowered. The cover 50 is a ring-shaped member that forms an annular gap between the cover 50 and the substrate W, and creates a strong airflow in the gap. The airflow flows above the substrate W, radially outward of the substrate W. The formation of the airflow can prevent mist from adhering to the upper surface Wa of the substrate.

[0024] The cover 50 includes an inner cylinder portion 51 facing the peripheral edge of the substrate upper surface Wa, an outer cylinder portion 52 disposed outside the inner cylinder portion 51, and a seal portion 53 that seals between the outer cylinder portion 52 and the outer wall 44 of the cup 40. The inner cylinder portion 51 has a circular opening when viewed from above. The diameter of the opening is smaller than the diameter of the substrate W. A gap is formed between the inner cylinder portion 51 and the peripheral edge of the substrate upper surface Wa. The inner cylinder portion 51 protrudes downward more than the outer cylinder portion 52 so that the gap is small and, therefore, a strong airflow is formed in the gap.

[0025] A notch 54 is formed on the inner edge of the cover 50, and a first nozzle 31A, which will be described later, is disposed in the notch 54. The first nozzle 31A is disposed so as to be movable in the radial direction of the substrate W.

[0026] The substrate processing apparatus 1 includes a first nozzle 31A. The first nozzle 31A is connected to a first processing liquid supply mechanism 32A. The first processing liquid supply mechanism 32A includes an on-off valve, a flow meter, and a flow rate controller. The first processing liquid supply mechanism 32A supplies the first processing liquid to the first nozzle 31A. The first nozzle 31A supplies the first processing liquid from above the substrate W held by the substrate rotation unit 20 toward the substrate W. The first processing liquid inhibits removal of the film F by a second processing liquid, which will be described later. The first processing liquid is, for example, DIW (deionized water).

[0027] The first processing liquid is supplied to the substrate upper surface Wa (specifically, the horizontal plane Wa1 of the substrate upper surface Wa), and then flows radially outward of the substrate W due to centrifugal force. The first processing liquid prevents the second processing liquid from flowing from the substrate lower surface Wb to the substrate upper surface Wa via the substrate peripheral edge Wc. The first processing liquid also dilutes the second processing liquid. The first processing liquid is not limited to DIW as long as it can inhibit the removal of the film F by the second processing liquid.

[0028] The first nozzle 31A may eject the first processing liquid obliquely downward toward the outer side in the radial direction of the substrate W. This allows the first processing liquid to be supplied to the upper surface Wa of the substrate without resisting centrifugal force, and prevents the first processing liquid from scattering due to the impact when the first processing liquid collides with the upper surface Wa of the substrate. Although not shown, the first nozzle 31A may eject the first processing liquid obliquely downward toward the outer side in the radial direction of the substrate W and in the rotation direction of the substrate W.

[0029] The substrate processing apparatus 1 also includes a second nozzle 31B. The second nozzle 31B is connected to a second processing liquid supply mechanism 32B. The second processing liquid supply mechanism 32B includes an on-off valve, a flow meter, and a flow rate controller. The second processing liquid supply mechanism 32B supplies the second processing liquid to the second nozzle 31B. The second nozzle 31B supplies the second processing liquid from below the substrate W held by the substrate rotation unit 20 toward the substrate W. The second processing liquid removes the film F. The second processing liquid is selected depending on the type of film F to be removed. For example, if the film F is a tungsten film or a titanium nitride film, the second processing liquid may be hydrogen peroxide.

[0030] The second processing liquid is supplied to the substrate lower surface Wb (more specifically, the horizontal plane Wb1 of the substrate lower surface Wb), and then flows radially outward of the substrate W due to centrifugal force. The second processing liquid flows from the substrate lower surface Wb, through the substrate peripheral edge Wc, to the substrate upper surface Wa, and removes the peripheral edge portion of the film F. The second processing liquid is an etching liquid, a developing liquid, or the like, and is not particularly limited.

[0031] The second nozzle 31B may eject the second processing liquid obliquely upward toward the outer side in the radial direction of the substrate W. This allows the second processing liquid to be supplied to the lower surface Wb of the substrate without resisting centrifugal force, and prevents the second processing liquid from scattering due to the impact when the second processing liquid collides with the lower surface Wb of the substrate. Although not shown, the second nozzle 31B may eject the second processing liquid obliquely upward toward the outer side in the radial direction of the substrate W and in the rotation direction of the substrate W.

[0032] The substrate processing apparatus 1 may include a third nozzle 31C. The third nozzle 31C is connected to a third processing liquid supply mechanism 32C. The third processing liquid supply mechanism 32C includes an on-off valve, a flow meter, and a flow rate controller. The third processing liquid supply mechanism 32C supplies the third processing liquid to the third nozzle 31C. The third nozzle 31C supplies the third processing liquid from below the substrate W held by the substrate rotation unit 20 toward the substrate W. The third processing liquid is supplied to the substrate W after the second processing liquid, and washes away the second processing liquid remaining on the substrate W. The third processing liquid is not particularly limited, but may be, for example, DIW.

[0033] The third processing liquid is supplied to the substrate lower surface Wb (more specifically, the horizontal plane Wb1 of the substrate lower surface Wb), and then flows radially outward of the substrate W due to centrifugal force. The third processing liquid flows from the substrate lower surface Wb to the substrate upper surface Wa via the substrate peripheral edge Wc, and mixes with the first processing liquid. The third processing liquid is preferably the same type as the first processing liquid.

[0034] The third nozzle 31C may eject the third processing liquid obliquely upward toward the radially outer side of the substrate W. This allows the third processing liquid to be supplied to the substrate undersurface Wb without resisting centrifugal force, and prevents the third processing liquid from scattering due to the impact when the third processing liquid collides with the substrate undersurface Wb. Although not shown, the third nozzle 31C may eject the third processing liquid obliquely upward toward the radially outer side of the substrate W and in the rotation direction of the substrate W.

[0035] The third nozzle 31C may be disposed more inward than the second nozzle 31B in the radial direction of the substrate W. The third processing liquid can be supplied to the entire region to which the second processing liquid is supplied, and residue of the second processing liquid can be reduced.

[0036] 5 to 12, a substrate processing method according to one embodiment will be described. As shown in Fig. 5, the substrate processing method includes, for example, steps S101 to S106. Steps S101 to S106 are performed under the control of the control unit 90. The processing from step S101 onwards starts when a transfer device (not shown) loads a substrate W into the processing vessel 10 and the substrate rotation unit 20 holds the substrate W horizontally.

[0037] 6 and 7, step S101 includes supplying a first processing liquid L1 from the first nozzle 31A while the substrate W is being rotated at a first rotation speed n1 by the substrate rotation unit 20. The first processing liquid L1 is supplied to the substrate upper surface Wa (more specifically, the horizontal plane Wa1 of the substrate upper surface Wa), and then flows radially outward of the substrate W. The first processing liquid L1 may extend beyond the substrate peripheral edge We and wrap around to the substrate lower surface Wb. In step S101, the second processing liquid L2 and the third processing liquid L3 are not supplied to the substrate W.

[0038] 6 and 8, in step S102, the second nozzle 31B supplies the second processing liquid L2 while the substrate W is being rotated at the first rotation speed n1 by the substrate rotation unit 20. After being supplied to the substrate lower surface Wb, the second processing liquid L2 flows from the substrate lower surface Wb, across the substrate peripheral edge Wc, and onto the substrate upper surface Wa, thereby removing the peripheral edge of the film F.

[0039] In step S102, not only the second processing liquid L2 but also the first processing liquid L1 is supplied to the substrate W. The first processing liquid L1 suppresses the second processing liquid L2 from flowing around and dilutes the second processing liquid L2, inhibiting the removal of the film F by the second processing liquid L2. As a result, a boundary B between the covered portion and the exposed portion is formed on the upper surface Wa of the substrate. The covered portion is the portion where the film F remains, and the exposed portion is the portion where the film F is removed. The exposed portion is formed radially outward from the covered portion. The width CW of the exposed portion when viewed from above is also referred to as the cut width CW.

[0040] As described above, the first treatment liquid L1 suppresses the intrusion of the second treatment liquid L2 and dilutes the second treatment liquid L2, inhibiting the second treatment liquid L2 from removing the film F. By supplying the first treatment liquid L1, the cut width CW can be made smaller than when the first treatment liquid L1 is not supplied (see FIG. 10).

[0041] By reducing the cut width CW, the effective area (e.g., the area where chips are formed) of the horizontal surface Wa1 of the substrate upper surface Wa can be expanded. Also, by reducing the cut width CW, a wide area of ​​the horizontal surface Wa1 of the substrate upper surface Wa can be protected by the covering portion in the subsequent etching process, thereby suppressing the occurrence of defects such as voids.

[0042] As described above, the second processing liquid L2 is supplied to the substrate lower surface Wb, and then flows from the substrate lower surface Wb to the substrate upper surface Wa via the substrate peripheral edge We. Unlike when the second processing liquid L2 is supplied directly to the substrate upper surface Wa, the cut width CW can be controlled by the first rotation speed n1. The higher the first rotation speed n1, the stronger the centrifugal force, which suppresses the second processing liquid L2 from flowing around and reduces the cut width CW (see FIG. 10).

[0043] When the second processing liquid L2 is supplied directly to the substrate upper surface Wa as in Patent Document 1, the cut width CW is determined by the supply position. If an attempt is made to control the cut width CW by controlling the supply position of the second processing liquid L2, the shape of the boundary B when viewed from above is likely to be a jagged circle rather than a perfect circle. If the cut width CW is small, fluctuations in the cut width CW are likely to be noticeable. Furthermore, if an attempt is made to supply the second processing liquid L2 directly to the bevel surface Wa2 of the substrate upper surface Wa, the supply position will fluctuate regardless, and the shape of the boundary B when viewed from above is likely to be a jagged circle.

[0044] According to this embodiment, as described above, the second processing liquid L2 is supplied to the substrate lower surface Wb, and then flows from the substrate lower surface Wb to the substrate upper surface Wa via the substrate periphery We. Unlike when the second processing liquid L2 is supplied directly to the substrate upper surface Wa, the cut width CW can be controlled by the first rotation speed n1. Furthermore, the first processing liquid L1 can stabilize the flow of the second processing liquid L2. Therefore, the shape of the boundary B when viewed from above can be made closer to a perfect circle. In other words, the cut width CW can be stably reduced.

[0045] According to this embodiment, since the cut width CW can be stably reduced, it is also possible to remove the peripheral edge of the film F so that the boundary B remains on the bevel surface Wa2. When removing the peripheral edge of the film F so that the boundary B remains on the bevel surface Wa2, the control unit 90 sets the first rotation speed n1 to be larger than when removing the peripheral edge of the film F so that the boundary B extends beyond the bevel surface Wa2 and reaches the horizontal plane Wa1. It is preferable to set the first rotation speed n1 to 800 rpm to 2400 rpm.

[0046] 6 to 8, the control unit 90 controls the supply of the second processing liquid L2 by the second nozzle 31B after the supply of the first processing liquid L1 by the first nozzle 31A is started. By starting the supply of the first processing liquid L1 before the supply of the second processing liquid L2, the flow of the second processing liquid L2 can be stabilized. It is preferable that the control unit 90 starts the supply of the second processing liquid L2 after the first processing liquid L1 has reached the substrate periphery Wc.

[0047] 6 and 9, step S103 includes supplying a third processing liquid L3 through the third nozzle 31C while the substrate W is rotated by the substrate rotation unit 20 at a second rotation speed n2 that is lower than the first rotation speed n1. Step S103 is performed after the supply of the second processing liquid L2 is stopped and the control for removing the peripheral edge of the film F is completed. The second processing liquid L2 remaining on the substrate W can be washed away with the third processing liquid L3. Setting the second rotation speed n2 to be lower than the first rotation speed n1 can suppress the generation of mist, and therefore the generation of particles. The second rotation speed n2 is, for example, 400 rpm to 800 rpm.

[0048] During steps S101 to S103, the position of the first nozzle 31A is preferably fixed to prevent the generation of mist.

[0049] 6, step S104 includes drying the substrate W by rotating the substrate W by the substrate rotation unit 20 at a third rotation speed n3 that is higher than the first rotation speed n1. Step S104 is performed after the supply of the first processing liquid L1 and the third processing liquid L3 is stopped. The higher the third rotation speed n3, the stronger the centrifugal force, and the easier it is for the substrate W to be dried. The third rotation speed n3 is, for example, 2200 rpm to 3000 rpm.

[0050] 11 , step S105 includes capturing an image of the peripheral portion of the substrate W viewed from the side by the imaging unit 60. The processes from step S105 onwards may be performed before or after the substrate W is transferred out of the processing vessel 10. That is, the imaging unit 60 may be provided inside or outside the processing vessel 10.

[0051] The imaging unit 60 is a camera. The camera may be either a color camera or a monochrome camera. The imaging unit 60 captures an image P (see FIG. 12) of the peripheral edge of the substrate W viewed from the side via, for example, a curved mirror 61 and a flat mirror 62. The curved mirror 61 is disposed to the side of the peripheral edge of the substrate W, and the flat mirror 62 is disposed above the curved mirror 61. Note that the curved mirror 61 and the flat mirror 62 do not have to be provided, and the imaging unit 60 may be disposed to the side of the peripheral edge of the substrate W.

[0052] The imaging unit 60 may capture an image of the peripheral edge of the substrate W viewed from above, but preferably captures an image P of the peripheral edge of the substrate W viewed from the side, as shown in Fig. 12. When the peripheral edge of the film F is removed so that the boundary B remains on the bevel surface Wa2, it is easier to detect the boundary B in the image P viewed from the side than in the image viewed from above.

[0053] In step S106, the image P is processed to detect the boundary B and estimate the cut width CW. The relationship between the coordinates of the boundary B in the image P and the cut width CW is stored in advance for each shape of the bevel surface Wa2. After detecting the coordinates of the boundary B in the image P, the control unit 90 estimates the cut width CW by referring to the pre-stored information.

[0054] The relationship between the coordinates of boundary B in image P, the angle θ shown in Fig. 3, and the cut width CW may be stored in advance. As shown in Fig. 3, the angle θ is the angle between the horizontal line and a line connecting boundary B to an intersection O between a vertical line passing through the upper end of bevel surface Wa2 and a horizontal line passing through the lower end of bevel surface Wa2. After detecting the coordinates of boundary B in image P, control unit 90 may estimate the angle θ and the cut width CW by referring to the pre-stored information.

[0055] The control unit 90 may perform control to display the image P on the image display device. The displayed image P may include a scale indicating the magnitude of at least one of the cut width CW and the angle θ, as shown in FIG. 12. The vertical coordinate of the image P may be proportional to the angle θ, for example. By looking at the image P displayed on the image display device, the user can detect the boundary B and estimate the cut width CW.

[0056] The following notes are provided regarding the above embodiment. [Appendix 1] 1. A substrate processing apparatus for removing a peripheral portion of a film formed on an upper surface of a substrate, comprising: a substrate rotation unit that holds the substrate horizontally and rotates it; a first nozzle that supplies a first processing liquid that inhibits removal of the film from above the substrate held by the substrate rotation unit toward the substrate; a second nozzle that supplies a second processing liquid that removes the film from below the substrate held by the substrate rotation unit toward the substrate; a control unit that controls the rotation of the substrate, the supply of the first processing liquid, and the supply of the second processing liquid; Equipped with The control unit controls the substrate processing apparatus to remove the peripheral portion of the film by supplying the first processing liquid through the first nozzle and the second processing liquid through the second nozzle while rotating the substrate at a first rotation speed using the substrate rotation unit. [Appendix 2] the upper surface of the substrate held by the substrate rotation unit has a horizontal surface and a bevel surface provided outside the horizontal surface, The substrate processing apparatus of claim 1, wherein the control unit controls the removal of the peripheral portion of the film so that the boundary between the covered portion where the film remains and the exposed portion where the film is removed remains on the bevel surface. [Appendix 3] The substrate processing apparatus of Appendix 2, wherein the control unit controls the first rotation speed to be larger when removing the peripheral portion of the film so that the boundary remains on the bevel surface than when removing the peripheral portion of the film so that the boundary extends beyond the bevel surface and reaches the horizontal surface. [Appendix 4] an imaging unit that captures an image of the peripheral edge portion of the substrate from the side; 4. The substrate processing apparatus according to claim 2, wherein the control unit processes the image to detect the boundary and estimate the width of the exposed portion when viewed from above. [Appendix 5] the first nozzle ejects the first processing liquid obliquely downward toward a radially outer side of the substrate; the second nozzle ejects the second processing liquid obliquely upward toward a radially outer side of the substrate, The substrate processing apparatus according to any one of claims 1 to 4, wherein the control unit performs control to start supplying the second processing liquid through the second nozzle after starting supplying the first processing liquid through the first nozzle. [Appendix 6] a third nozzle that supplies a third processing liquid from below the substrate held by the substrate rotation unit toward the substrate; The substrate processing apparatus according to any one of claims 1 to 5, wherein, after the control unit has stopped the supply of the second processing liquid by the second nozzle and completed the control of removing the peripheral portion of the film, the control unit controls the supply of the third processing liquid by the third nozzle while rotating the substrate by the substrate rotation unit at a second rotation speed which is lower than the first rotation speed. [Appendix 7] 1. A substrate processing method, comprising removing a peripheral portion of a film formed on an upper surface of a substrate, a first processing liquid that inhibits removal of the film toward the substrate from a first nozzle above the substrate while the substrate is being rotated at a first rotation speed, and a second processing liquid that removes the film toward the substrate from a second nozzle below the substrate, thereby removing a peripheral portion of the film. [Appendix 8] the upper surface of the substrate in a state rotated at the first rotation speed has a horizontal surface and a bevel surface provided outside the horizontal surface, 8. The substrate processing method according to claim 7, further comprising removing a peripheral portion of the film so that the boundary between the covered portion where the film remains and the exposed portion where the film is removed remains on the bevel surface. [Appendix 9] 9. The substrate processing method of claim 8, further comprising: setting the first rotation speed to be larger when removing the peripheral portion of the film so that the boundary remains on the bevel surface than when removing the peripheral portion of the film so that the boundary extends beyond the bevel surface and reaches the horizontal surface. [Appendix 10] 10. A substrate processing method according to claim 8, further comprising capturing an image of the peripheral edge of the substrate from the side, and processing the image to detect the boundary and estimate the width of the exposed portion when viewed from above. [Appendix 11] the first nozzle ejects the first processing liquid obliquely downward toward a radially outer side of the substrate; the second nozzle ejects the second processing liquid obliquely upward toward a radially outer side of the substrate, The substrate processing method according to any one of appendices 7 to 10, further comprising starting the supply of the first processing liquid by the first nozzle and then starting the supply of the second processing liquid by the second nozzle. [Appendix 12] 12. The substrate processing method according to any one of claims 7 to 11, further comprising: after stopping the supply of the second processing liquid to complete removal of the peripheral portion of the film, supplying a third processing liquid toward the substrate from a third nozzle below the substrate while rotating the substrate at a second rotation speed that is lower than the first rotation speed.

[0057] Although the embodiments of the substrate processing apparatus and substrate processing method according to the present disclosure have been described above, the present disclosure is not limited to the above-described embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These changes also naturally fall within the technical scope of the present disclosure.

[0058] This application claims priority based on Patent Application No. 2022-068333, filed with the Japan Patent Office on April 18, 2022, and the entire contents of Patent Application No. 2022-068333 are incorporated herein by reference. [Explanation of symbols]

[0059] 1. Substrate processing equipment 20 Substrate rotation unit 31A No. 1 nozzle 31B Second nozzle 90 Control Unit W substrate F membrane

Claims

1. 1. A substrate processing apparatus for removing a peripheral portion of a film formed on an upper surface of a substrate, comprising: a substrate rotation unit that holds the substrate horizontally and rotates it; a first nozzle configured to supply a first processing liquid that inhibits removal of the film from above the substrate held by the substrate rotation unit toward the substrate; a second nozzle that supplies a second processing liquid that removes the film from below the substrate held by the substrate rotation unit toward the substrate; a control unit that controls the rotation of the substrate, the supply of the first processing liquid, and the supply of the second processing liquid; Equipped with the control unit controls the substrate rotation unit to rotate the substrate at a first rotation speed, and controls the first processing liquid to be supplied by the first nozzle and the second processing liquid to be supplied by the second nozzle, thereby removing the peripheral edge portion of the film; the upper surface of the substrate held by the substrate rotation unit has a horizontal surface and a bevel surface provided outside the horizontal surface, The control unit controls the removal of the peripheral portion of the film so that a boundary between a covered portion where the film remains and an exposed portion where the film is removed remains on the bevel surface.

2. 2. The substrate processing apparatus of claim 1, wherein the control unit controls the first rotation speed to be larger when removing the peripheral portion of the film so that the boundary remains on the bevel surface than when removing the peripheral portion of the film so that the boundary extends beyond the bevel surface and reaches the horizontal surface.

3. an imaging unit that captures an image of the peripheral edge portion of the substrate from the side; The substrate processing apparatus according to claim 1 , wherein the control unit processes the image to detect the boundary and estimate a width of the exposed portion when viewed from above.

4. the first nozzle ejects the first processing liquid obliquely downward toward a radially outer side of the substrate; the second nozzle ejects the second processing liquid obliquely upward toward a radially outer side of the substrate, The substrate processing apparatus according to claim 1 , wherein the control unit performs control to start supplying the second processing liquid through the second nozzle after starting supplying the first processing liquid through the first nozzle.

5. 1. A substrate processing apparatus for removing a peripheral portion of a film formed on an upper surface of a substrate, comprising: a substrate rotation unit that holds the substrate horizontally and rotates it; a first nozzle configured to supply a first processing liquid that inhibits removal of the film from above the substrate held by the substrate rotation unit toward the substrate; a second nozzle that supplies a second processing liquid that removes the film from below the substrate held by the substrate rotation unit toward the substrate; a control unit that controls the rotation of the substrate, the supply of the first processing liquid, and the supply of the second processing liquid; Equipped with the control unit controls the substrate rotation unit to rotate the substrate at a first rotation speed, and controls the first processing liquid to be supplied by the first nozzle and the second processing liquid to be supplied by the second nozzle, thereby removing the peripheral edge portion of the film; the substrate processing apparatus includes a third nozzle that supplies a third processing liquid toward the substrate from below the substrate held by the substrate rotation unit, The control unit controls the supply of the third processing liquid by the third nozzle while rotating the substrate by the substrate rotation unit at a second rotation speed that is lower than the first rotation speed, after stopping the supply of the second processing liquid by the second nozzle and completing the control to remove the peripheral portion of the film.

6. 1. A substrate processing method, comprising removing a peripheral portion of a film formed on an upper surface of a substrate, a first processing liquid that inhibits removal of the film is supplied from a first nozzle above the substrate toward the substrate while the substrate is being rotated at a first rotation speed, and a second processing liquid that removes the film is supplied from a second nozzle below the substrate toward the substrate, thereby removing a peripheral portion of the film; the upper surface of the substrate in a state rotated at the first rotation speed has a horizontal surface and a bevel surface provided outside the horizontal surface, The substrate processing method includes removing a peripheral portion of the film so that a boundary between a covered portion where the film remains and an exposed portion where the film is removed remains on the bevel surface.

7. 7. The substrate processing method of claim 6, further comprising: setting the first rotation speed to be larger when removing the peripheral portion of the film so that the boundary remains on the bevel surface than when removing the peripheral portion of the film so that the boundary extends beyond the bevel surface and reaches the horizontal surface.

8. 8. The substrate processing method according to claim 6, further comprising capturing an image of the peripheral edge of the substrate viewed from the side, and processing the image to detect the boundary and estimate the width of the exposed portion when viewed from above.

9. the first nozzle ejects the first processing liquid obliquely downward toward a radially outer side of the substrate; the second nozzle ejects the second processing liquid obliquely upward toward a radially outer side of the substrate, 8. The substrate processing method according to claim 6, further comprising starting supply of the second processing liquid by the second nozzle after starting supply of the first processing liquid by the first nozzle.

10. 1. A substrate processing method, comprising removing a peripheral portion of a film formed on an upper surface of a substrate, a first processing liquid that inhibits removal of the film is supplied from a first nozzle above the substrate toward the substrate while the substrate is being rotated at a first rotation speed, and a second processing liquid that removes the film is supplied from a second nozzle below the substrate toward the substrate, thereby removing a peripheral portion of the film; a third nozzle below the substrate, the third nozzle being positioned below the substrate, and the supply of the second processing liquid being stopped to complete removal of the peripheral portion of the film, the third processing liquid being supplied toward the substrate while the substrate is being rotated at a second rotation speed that is lower than the first rotation speed.

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