Solid-state imaging device, manufacturing method for solid-state imaging device, and electronic device

Abstract

This solid-state imaging device (1) comprises a photoelectric conversion part (30) that has a first electrode (31), a photoelectric conversion layer (34) that is electrically connected to the first electrode (31), and a second electrode (35) that is provided on a light-incidence-side surface of the photoelectric conversion layer (34). The photoelectric conversion layer (34) has a protruding region (34a) that protrudes from the second electrode (35) in plan view.

Description

[Technical Field]

[0001] The present disclosure relates to a solid-state imaging device, a method for manufacturing a solid-state imaging device, and an electronic device. [Background technology]

[0002] In recent years, a structure has been proposed for a photoelectric conversion element used in an image sensor of a camera or the like, in which an organic photoelectric conversion layer that photoelectrically converts incident light is laminated on the light incident side of a semiconductor layer (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2017-157816 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the above-mentioned conventional technology, in order to form a good photoelectric conversion layer in the manufacturing process of a solid-state imaging device, there is a fundamental need to form such a photoelectric conversion layer after a certain level of semiconductor processing has been completed.

[0005] For example, when a high-temperature annealing process is performed as a semiconductor process, if a photoelectric conversion layer is formed before the annealing process, the annealing process may damage the photoelectric conversion layer, which is made of an organic material.

[0006] Therefore, the present disclosure proposes a solid-state imaging device in which a good photoelectric conversion layer is formed, a method for manufacturing a solid-state imaging device, and an electronic device. [Means for solving the problem]

[0007] According to the present disclosure, there is provided a solid-state imaging device. The solid-state imaging device includes a photoelectric conversion unit having a first electrode, a photoelectric conversion layer electrically connected to the first electrode, and a second electrode provided on a light incident surface of the photoelectric conversion layer. The photoelectric conversion layer has a protruding region that protrudes from the second electrode in a plan view. [Effects of the Invention]

[0008] According to the present disclosure, it is possible to provide a solid-state imaging device in which a good photoelectric conversion layer is formed, a method for manufacturing a solid-state imaging device, and an electronic device. Note that the effects described herein are not necessarily limited to those described herein, and may be any of the effects described in the present disclosure. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a system configuration diagram illustrating a schematic configuration example of a solid-state imaging device according to an embodiment of the present disclosure. [Figure 2] FIG. 2 is a cross-sectional view schematically illustrating the structure of a pixel array unit according to an embodiment of the present disclosure. [Figure 3A] FIG. 3 is a plan view of the structure at a depth D1 shown in FIG. 2. [Figure 3B] FIG. 3 is a plan view of the structure at a depth D2 shown in FIG. [Figure 3C] FIG. 3 is a plan view of the structure at a depth D3 shown in FIG. [Figure 3D] FIG. 3 is a plan view of the structure at a depth D4 shown in FIG. [Figure 3E] FIG. 3 is a plan view of the structure at a depth D5 shown in FIG. [Figure 3F] FIG. 3 is a plan view of the structure at a depth D6 shown in FIG. [Figure 3G] FIG. 3 is a plan view of the structure at a depth D7 shown in FIG. [Figure 3H] FIG. 3 is a plan view of the structure at a depth D8 shown in FIG. [Figure 3I] FIG. 3 is a plan view of the structure at a depth D9 shown in FIG. [Figure 3J] FIG. 3 is a plan view of the structure at a depth D10 shown in FIG. [Figure 3K]FIG. 3 is a plan view of the structure at a depth D11 shown in FIG. [Figure 4] FIG. 2 is a circuit diagram showing a circuit configuration of a unit pixel according to an embodiment of the present disclosure. [Figure 5] FIG. 10 is a cross-sectional view schematically showing the structure of a pixel array unit according to another embodiment of the present disclosure. [Figure 6] FIG. 10 is a cross-sectional view schematically showing the structure of a pixel array unit according to another embodiment of the present disclosure. [Figure 7] FIG. 10 is a cross-sectional view schematically showing the structure of a pixel array unit according to another embodiment of the present disclosure. [Figure 8] FIG. 10 is a cross-sectional view schematically showing the structure of a pixel array section according to a first modified example of the embodiment of the present disclosure. [Figure 9] FIG. 10 is a cross-sectional view schematically showing the structure of a pixel array section according to a second modification of the embodiment of the present disclosure. [Figure 10] FIG. 10 is a cross-sectional view schematically illustrating a structure of a pixel array section according to a third modification of the embodiment of the present disclosure. [Figure 11] FIG. 10 is a cross-sectional view schematically showing the structure of a pixel array section according to a fourth modification of the embodiment of the present disclosure. [Figure 12] FIG. 10 is a circuit diagram showing a circuit configuration of a unit pixel according to a fourth modified example of the embodiment of the present disclosure. [Figure 13] FIG. 11 is a cross-sectional view schematically showing the structure of a pixel array section according to a fifth modification of the embodiment of the present disclosure. [Figure 14A] 10A to 10C are cross-sectional views schematically illustrating a manufacturing process of a pixel array unit according to an embodiment of the present disclosure. [Figure 14B] 10A to 10C are cross-sectional views schematically illustrating a manufacturing process of a pixel array unit according to an embodiment of the present disclosure. [Figure 14C] 10A to 10C are cross-sectional views schematically illustrating a manufacturing process of a pixel array unit according to an embodiment of the present disclosure. [Figure 14D] 10A to 10C are cross-sectional views schematically illustrating a manufacturing process of a pixel array unit according to an embodiment of the present disclosure. [Figure 14E] 10A to 10C are cross-sectional views schematically illustrating a manufacturing process of a pixel array unit according to an embodiment of the present disclosure. [Figure 14F]10A to 10C are cross-sectional views schematically illustrating a manufacturing process of a pixel array unit according to an embodiment of the present disclosure. [Figure 14G] 10A to 10C are cross-sectional views schematically illustrating a manufacturing process of a pixel array unit according to an embodiment of the present disclosure. [Figure 14H] 10A to 10C are cross-sectional views schematically illustrating a manufacturing process of a pixel array unit according to an embodiment of the present disclosure. [Figure 14I] 10A to 10C are cross-sectional views schematically illustrating a manufacturing process of a pixel array unit according to an embodiment of the present disclosure. [Figure 14J] 10A to 10C are cross-sectional views schematically illustrating a manufacturing process of a pixel array unit according to an embodiment of the present disclosure. [Figure 14K] 10A to 10C are cross-sectional views schematically illustrating a manufacturing process of a pixel array unit according to an embodiment of the present disclosure. [Figure 14L] 10A to 10C are cross-sectional views schematically illustrating a manufacturing process of a pixel array unit according to an embodiment of the present disclosure. [Figure 14M] 10A to 10C are cross-sectional views schematically illustrating a manufacturing process of a pixel array unit according to an embodiment of the present disclosure. [Figure 14N] 10A to 10C are cross-sectional views schematically illustrating a manufacturing process of a pixel array unit according to an embodiment of the present disclosure. [Figure 14O] 10A to 10C are cross-sectional views schematically illustrating a manufacturing process of a pixel array unit according to an embodiment of the present disclosure. [Figure 14P] 10A to 10C are cross-sectional views schematically illustrating a manufacturing process of a pixel array unit according to an embodiment of the present disclosure. [Figure 14Q] 10A to 10C are cross-sectional views schematically illustrating a manufacturing process of a pixel array unit according to an embodiment of the present disclosure. [Figure 14R] 10A to 10C are cross-sectional views schematically illustrating a manufacturing process of a pixel array unit according to an embodiment of the present disclosure. [Figure 14S] 10A to 10C are cross-sectional views schematically illustrating a manufacturing process of a pixel array unit according to an embodiment of the present disclosure. [Figure 14T] 10A to 10C are cross-sectional views schematically illustrating a manufacturing process of a pixel array unit according to an embodiment of the present disclosure. [Figure 14U] 10A to 10C are cross-sectional views schematically illustrating a manufacturing process of a pixel array unit according to an embodiment of the present disclosure. [Figure 15A] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to Modification 1 of the embodiment of the present disclosure. [Figure 15B] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to Modification 1 of the embodiment of the present disclosure. [Figure 15C] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to Modification 1 of the embodiment of the present disclosure. [Figure 15D] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to Modification 1 of the embodiment of the present disclosure. [Figure 15E] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to Modification 1 of the embodiment of the present disclosure. [Figure 16A] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to Modification 2 of the embodiment of the present disclosure. [Figure 16B] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to Modification 2 of the embodiment of the present disclosure. [Figure 16C] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to Modification 2 of the embodiment of the present disclosure. [Figure 16D] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to Modification 2 of the embodiment of the present disclosure. [Figure 16E] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to Modification 2 of the embodiment of the present disclosure. [Figure 17A] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to a third modification of the embodiment of the present disclosure. [Figure 17B] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to a third modification of the embodiment of the present disclosure. [Figure 17C] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to a third modification of the embodiment of the present disclosure. [Figure 17D] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to a third modification of the embodiment of the present disclosure. [Figure 17E]10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to a third modification of the embodiment of the present disclosure. [Figure 17F] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to a third modification of the embodiment of the present disclosure. [Figure 17G] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to a third modification of the embodiment of the present disclosure. [Figure 17H] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to a third modification of the embodiment of the present disclosure. [Figure 17I] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to a third modification of the embodiment of the present disclosure. [Figure 18A] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to another example of the third modification of the embodiment of the present disclosure. [Figure 18B] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to another example of the third modification of the embodiment of the present disclosure. [Figure 18C] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to another example of the third modification of the embodiment of the present disclosure. [Figure 18D] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to another example of the third modification of the embodiment of the present disclosure. [Figure 18E] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to another example of the third modification of the embodiment of the present disclosure. [Figure 18F] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to another example of the third modification of the embodiment of the present disclosure. [Figure 19A] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to Modification 4 of the embodiment of the present disclosure. [Figure 19B] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to Modification 4 of the embodiment of the present disclosure. [Figure 19C] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to Modification 4 of the embodiment of the present disclosure. [Figure 19D]10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to Modification 4 of the embodiment of the present disclosure. [Figure 19E] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to Modification 4 of the embodiment of the present disclosure. [Figure 19F] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to Modification 4 of the embodiment of the present disclosure. [Figure 19G] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to Modification 4 of the embodiment of the present disclosure. [Figure 19H] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to Modification 4 of the embodiment of the present disclosure. [Figure 19I] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to Modification 4 of the embodiment of the present disclosure. [Figure 19J] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to Modification 4 of the embodiment of the present disclosure. [Figure 19K] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to Modification 4 of the embodiment of the present disclosure. [Figure 19L] 10A to 10C are cross-sectional views schematically showing a manufacturing process of a pixel array unit according to Modification 4 of the embodiment of the present disclosure. [Figure 20] FIG. 2 is a plan view schematically illustrating an example of an arrangement of injection ports according to an embodiment of the present disclosure. [Figure 21] FIG. 2 is a plan view schematically illustrating an example of an arrangement of injection ports according to an embodiment of the present disclosure. [Figure 22] FIG. 2 is a plan view schematically illustrating an example of an arrangement of injection ports according to an embodiment of the present disclosure. [Figure 23] 1 is a flowchart showing a processing procedure of a manufacturing process according to an embodiment. [Figure 24] 1 is a block diagram illustrating an example of the configuration of an imaging device as an electronic device to which the technology according to the present disclosure is applied. [Figure 25] 1 is a block diagram showing an example of a schematic configuration of a vehicle control system; [Figure 26] FIG. 2 is an explanatory diagram showing an example of the installation positions of an outside-vehicle information detection unit and an imaging unit. [Figure 27] FIG. 1 is a diagram illustrating an example of a schematic configuration of an endoscopic surgery system. [Figure 28] FIG. 2 is a block diagram showing an example of the functional configuration of a camera head and a CCU. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, each embodiment of the present disclosure will be described in detail with reference to the drawings. In the following embodiments, the same components are designated by the same reference numerals, and redundant description will be omitted.

[0011] BACKGROUND ART In recent years, a structure has been proposed for a photoelectric conversion element used in an image sensor of a camera or the like, in which an organic photoelectric conversion layer that photoelectrically converts incident light is laminated on the light incident side of a semiconductor layer.

[0012] However, in the above-mentioned conventional technology, in order to form a good photoelectric conversion layer in the manufacturing process of a solid-state imaging device, there is a fundamental need to form such a photoelectric conversion layer after a certain level of semiconductor processing has been completed.

[0013] For example, when a high-temperature annealing process is performed as a semiconductor process, if a photoelectric conversion layer is formed before the annealing process, the annealing process may damage the photoelectric conversion layer, which is made of an organic material.

[0014] On the other hand, if the annealing temperature is set lower than the heat resistance temperature of the photoelectric conversion layer in order to prevent damage to the photoelectric conversion layer, the desired annealing effect cannot be obtained, making it difficult to obtain good device characteristics.

[0015] Therefore, there is a need for a technology that can form a good photoelectric conversion layer without causing damage to the photoelectric conversion layer made of organic materials through annealing or other processes.

[0016] [Configuration of solid-state imaging device] 1 is a system configuration diagram showing a schematic configuration example of a solid-state imaging device 1 according to an embodiment of the present disclosure. As shown in FIG. 1, the solid-state imaging device 1, which is a CMOS image sensor, includes a pixel array unit 10, a system control unit 12, a vertical drive unit 13, a column readout circuit unit 14, a column signal processing unit 15, a horizontal drive unit 16, and a signal processing unit 17.

[0017] The pixel array section 10, system control section 12, vertical drive section 13, column readout circuit section 14, column signal processing section 15, horizontal drive section 16 and signal processing section 17 are provided on the same semiconductor substrate or on multiple electrically connected stacked semiconductor substrates.

[0018] The pixel array section 10 has effective unit pixels (hereinafter also referred to as "unit pixels") 11 arranged two-dimensionally in a matrix, each having a photoelectric conversion element (such as the photoelectric conversion section 30 (see Figure 2)) that can photoelectrically convert an amount of charge corresponding to the amount of incident light, store it internally, and output it as a signal.

[0019] In addition to the effective unit pixels 11, the pixel array section 10 may include an area in which dummy unit pixels having a structure that does not have a photoelectric conversion section 30, etc., and light-shielding unit pixels that block light incident from outside by shading the light-receiving surface are arranged in rows and / or columns.

[0020] The light-shielded unit pixel may have the same configuration as the effective unit pixel 11, except that the light-receiving surface is structured so as to be light-shielded. In the following description, the photocharge corresponding to the amount of incident light may also be simply referred to as "charge," and the unit pixel 11 may also be simply referred to as "pixel."

[0021] In the pixel array unit 10, pixel drive lines LD are formed for each row along the left-right direction in the drawing (the direction in which pixels in a pixel row are arranged) for the matrix-like pixel arrangement, and vertical pixel wiring LV is formed for each column along the up-down direction in the drawing (the direction in which pixels in a pixel column are arranged). One end of the pixel drive line LD is connected to an output terminal of the vertical drive unit 13 corresponding to each row.

[0022] The column readout circuit unit 14 includes at least a circuit for supplying a constant current to the unit pixels 11 in a selected row in the pixel array unit 10 for each column, a current mirror circuit, and a switch for selecting the unit pixel 11 to be read out.

[0023] The column readout circuit unit 14 forms an amplifier together with the transistor in the selected pixel in the pixel array unit 10, converts the photocharge signal into a voltage signal, and outputs it to the vertical pixel line LV.

[0024] The vertical drive unit 13 includes a shift register, an address decoder, etc., and drives each unit pixel 11 of the pixel array unit 10, either all pixels at the same time or row by row, etc. Although the specific configuration of this vertical drive unit 13 is not shown in the figure, it is configured to have a readout scanning system and a sweep scanning system or a batch sweep and batch transfer system.

[0025] The readout scanning system sequentially selects and scans the unit pixels 11 of the pixel array section 10 row by row to read out pixel signals from the unit pixels 11. In the case of row driving (rolling shutter operation), for the readout row on which the readout scanning system is to perform readout scanning, the sweepout scanning is performed prior to the readout scanning by the shutter speed.

[0026] In the case of global exposure (global shutter operation), a collective sweep is performed prior to the collective transfer by the time of the shutter speed. This sweep sweeps out (resets) unnecessary charges from the photoelectric conversion units 30 of the unit pixels 11 in the readout row. The sweeping out (resetting) of unnecessary charges then performs a so-called electronic shutter operation.

[0027] Here, the electronic shutter operation refers to an operation of discarding unnecessary photoelectric charges that have been accumulated in the photoelectric conversion unit 30 and the like until just before, and starting new exposure (starting accumulation of photoelectric charges).

[0028] The signal read by the readout operation by the readout scanning system corresponds to the amount of light that has entered since the immediately preceding readout operation or electronic shutter operation. In the case of row driving, the period from the readout timing of the immediately preceding readout operation or the sweep timing of the electronic shutter operation to the readout timing of the current readout operation is the accumulation time (exposure time) of the photocharge in the unit pixel 11. In the case of global exposure, the time from the collective sweep to the collective transfer is the accumulation time (exposure time).

[0029] The pixel signals output from each unit pixel 11 in a pixel row selected and scanned by the vertical drive unit 13 are supplied through each vertical pixel wiring LV to a column signal processing unit 15. The column signal processing unit 15 performs predetermined signal processing on the pixel signals output from each unit pixel 11 in the selected row through the vertical pixel wiring LV for each pixel column in the pixel array unit 10, and temporarily stores the pixel signals after signal processing.

[0030] Specifically, the column signal processing unit 15 performs at least noise removal processing, such as CDS (Correlated Double Sampling) processing, as signal processing. The CDS processing by the column signal processing unit 15 removes pixel-specific fixed pattern noise such as reset noise and threshold variation of the amplification transistor AMP.

[0031] In addition to the noise removal processing, the column signal processing unit 15 may be configured to have, for example, an AD conversion function so as to output pixel signals as digital signals.

[0032] The horizontal driving unit 16 includes a shift register, an address decoder, etc., and sequentially selects unit circuits corresponding to pixel columns in the column signal processing unit 15. By selective scanning by this horizontal driving unit 16, pixel signals that have been signal-processed by the column signal processing unit 15 are output sequentially to the signal processing unit 17.

[0033] The system control unit 12 includes a timing generator that generates various timing signals, and controls the driving of the vertical driving unit 13, column signal processing unit 15, horizontal driving unit 16, etc. based on the various timing signals generated by the timing generator.

[0034] The solid-state imaging device 1 further includes a signal processing unit 17 and a data storage unit (not shown). The signal processing unit 17 has at least an addition processing function and performs various signal processing such as addition processing on the pixel signals output from the column signal processing unit 15.

[0035] The data storage unit temporarily stores data necessary for signal processing in the signal processing unit 17. The signal processing unit 17 and the data storage unit may be an external signal processing unit provided on a board separate from the solid-state imaging device 1, such as a DSP (Digital Signal Processor) or software processing, or may be mounted on the same board as the solid-state imaging device 1.

[0036] [Pixel array configuration] Next, a detailed configuration of the pixel array section 10 will be described with reference to Figures 2 to 3K. Figure 2 is a cross-sectional view schematically showing the structure of the pixel array section 10 according to an embodiment of the present disclosure, and Figures 3A to 3K are planar structural diagrams of depths D1 to D11 shown in Figure 2.

[0037] 2, the pixel array section 10 includes a photoelectric conversion section 20, a photoelectric conversion section 30, an insulating layer 40, and a semiconductor layer 50. The photoelectric conversion section 30 is provided on the light incident side of the semiconductor layer 50 (the side on which light L is incident from the outside), and the photoelectric conversion section 20 is provided on the light incident side of the photoelectric conversion section 30.

[0038] Furthermore, one photoelectric conversion unit 20 and one photoelectric conversion unit 30 are provided for each unit pixel 11 (see FIG. 1). That is, a plurality of photoelectric conversion units 20 and a plurality of photoelectric conversion units 30 are provided throughout the pixel array unit 10.

[0039] The photoelectric conversion section 20 has a first electrode 21 , a charge storage electrode 22 , a charge storage layer 23 , a photoelectric conversion layer 24 , and a second electrode 25 .

[0040] 2, the first electrode 21 is provided on the side opposite to the light incident side of the photoelectric conversion body 20. Furthermore, the first electrode 21, on the light incident side surface (hereinafter also referred to as the "top surface"), is in contact with the surface of the charge storage layer 23 opposite to the light incident side (hereinafter also referred to as the "bottom surface").

[0041] Furthermore, the first electrode 21 extends in the depth direction within the insulating layer 40 and is connected to a floating diffusion 51 provided in the semiconductor layer 50. In other words, the first electrode 21 electrically connects the charge storage layer 23 and the floating diffusion 51.

[0042] The first electrode 21 is made of a light-transmitting conductor, a so-called transparent conductor. The first electrode 21 is made of, for example, ITO (Indium Tin Oxide). Note that the material of the first electrode 21 is not limited to ITO, and may be a tin oxide (SnO2)-based material, a zinc oxide (ZnO)-based material, or the like.

[0043] Examples of such zinc oxide-based materials include AZO (Aluminum Zinc Oxide), GZO (Gallium Zinc Oxide), IZO (Indium Zinc Oxide), etc. Furthermore, the first electrode 21 may include, for example, CuI, InSbO4, ZnMgO, CuInO2, MgIn2O4, CdO, ZnSnO3, etc.

[0044] The charge storage electrode 22 is made of a transparent conductor such as ITO, AZO, GZO, IZO, etc. Note that the material of the charge storage electrode 22 is not limited to these transparent conductors, and may be the same as the various transparent conductors exemplified in the description of the first electrode 21.

[0045] 2 and 3G, the charge storage electrode 22 is provided adjacent to the first electrode 21 via the insulating layer 40. Note that the unit U1 shown in FIG. 3G is one unit in which a floating diffusion 51 is shared by multiple (four in FIG. 3G) photoelectric conversion units 20.

[0046] The charge storage layer 23 is made of a semiconductor material that has a large band gap, fast carrier mobility, and light transparency. For example, the charge storage layer 23 has a band gap of 3.0 (eV) or more, a carrier mobility faster than that of the material that makes up the photoelectric conversion layer 24, and an impurity concentration of 1×10 18 (cm -3 ) or less is preferred.

[0047] The charge storage layer 23 is made of, for example, an oxide semiconductor, an organic semiconductor, a two-dimensional semiconductor, etc. For this oxide semiconductor, for example, a chalcogenide-based oxide semiconductor or IGZO (Indium Gallium Zinc Oxide) can be used.

[0048] Furthermore, for the organic semiconductor, for example, rubrene, tetracene, pentacene, perylenediimide, tetracyanoquinodimethane, or other low molecular weight organic materials having an aromatic ring, such as condensed polycyclic hydrocarbon compounds or condensed heterocyclic compounds, can be used.

[0049] The organic semiconductor may be a π-electron conjugated conductive polymer such as polythiophene, polyacetylene, or polyparaphenylene vinylene, or may be silicon carbide, diamond, graphene, carbon nanotubes, condensed polycyclic hydrocarbon compounds, or condensed heterocyclic compounds.

[0050] Furthermore, for example, molybdenum disulfide (MoS2), tungsten disulfide (WS2), hafnium disulfide (HfS2), hexagonal boron nitride (hBN), indium selenide (InSe), transition metal dichalcogenides, and the like can be used as two-dimensional semiconductors.

[0051] Furthermore, when the charges to be stored are electrons, the charge storage layer 23 is preferably made of a material having a larger ionization potential than the ionization potential of the material constituting the photoelectric conversion layer 24. On the other hand, when the charges to be stored are holes, the charge storage layer 23 is preferably made of a material having a smaller electron affinity than the electron affinity of the material constituting the photoelectric conversion layer 24.

[0052] The charge storage tank 23 may have a single-layer structure or a multi-layer structure. The material constituting the charge storage layer 23 located above the charge storage electrode 22 may be different from the material constituting the charge storage layer 23 located above the first electrode 21.

[0053] 2 and 3G to 3J, the top surface of the charge storage layer 23 contacts the bottom surface of the photoelectric conversion layer 24, and the bottom surface of the charge storage layer 23 contacts the top surface of the first electrode 21. The bottom surface of the charge storage layer 23 is adjacent to the charge storage electrode 22 via the insulating layer 40. When a predetermined voltage is applied to the charge storage electrode 22, charges photoelectrically converted in the photoelectric conversion layer 24 are stored in the charge storage layer 23.

[0054] 2, 3I, and 3J, the photoelectric conversion layer 24 is provided so as to cover the upper surface of the charge storage layer 23. The photoelectric conversion layer 24 is made of an organic semiconductor material, and performs photoelectric conversion on light of a selective wavelength (for example, blue light) among light L incident from the outside.

[0055] The photoelectric conversion layer 24 preferably contains one or both of a p-type organic semiconductor and an n-type organic semiconductor. The photoelectric conversion layer 24 is preferably made of, for example, quinacridone, a quinacridone derivative, a subphthalocyanine, a subphthalocyanine derivative, or the like, and preferably contains at least one of these materials.

[0056] The photoelectric conversion layer 24 is not limited to such materials, and may be made of, for example, at least one of naphthalene, anthracene, phenanthrene, tetracene, pyrene, perylene, fluoranthene, and the like (all including derivatives).

[0057] The photoelectric conversion layer 24 may also be made of a polymer or derivative of phenylene vinylene, fluorene, carbazole, indole, pyrene, pyrrole, picoline, thiophene, acetylene, diacetylene, or the like.

[0058] Furthermore, the photoelectric conversion layer 24 may contain metal complex dyes, cyanine dyes, merocyanine dyes, phenylxanthene dyes, triphenylmethane dyes, rhodacyanine dyes, xanthene dyes, and the like.

[0059] Examples of such metal complex dyes include dithiol metal complex dyes, metal phthalocyanine dyes, metal porphyrin dyes, and ruthenium complex dyes. In addition to such organic semiconductor dyes, the photoelectric conversion layer 24 may also contain, for example, fullerene (C 60 ) and other organic materials such as BCP (Bathocuproine) may also be included.

[0060] When blue light is photoelectrically converted in the photoelectric conversion layer 24, for example, coumaric acid dye, tris-8-hydroxyquinoline aluminum (Alq3), melacyanine dye, or the like can be used for the photoelectric conversion layer 24.

[0061] 2, 3J, and 3K, the second electrode 25 is provided in contact with and covers the upper surface of the photoelectric conversion layer 24. The second electrode 25 is made of a transparent conductor such as ITO, AZO, GZO, or IZO. Note that the material of the second electrode 25 is not limited to these transparent conductors, and may be the same as the various transparent conductors exemplified in the description of the first electrode 21.

[0062] The photoelectric conversion unit 30 is provided on the bottom side of the photoelectric conversion unit 20 so as to be stacked on the photoelectric conversion unit 20. The photoelectric conversion unit 30 has a first electrode 31, a charge storage electrode 32, a charge storage layer 33, a photoelectric conversion layer 34, and a second electrode 35.

[0063] 2, 3A, and 3B, the first electrode 31 is provided on the side opposite to the light incident side of the photoelectric conversion body 30. The first electrode 31 has an upper surface in contact with the bottom surface of the charge storage layer 33.

[0064] Furthermore, the first electrode 31 extends in the depth direction within the insulating layer 40 and is connected to a floating diffusion 52 provided in the semiconductor layer 50. In other words, the first electrode 31 electrically connects the charge storage layer 33 and the floating diffusion 52.

[0065] The first electrode 31 is made of a transparent conductor such as ITO, AZO, GZO, IZO, etc. Note that the constituent material of the first electrode 31 is not limited to these transparent conductors, and may be the same material as the various transparent conductors exemplified in the description of the first electrode 21.

[0066] The charge storage electrode 32 is made of a transparent conductor such as ITO, AZO, GZO, IZO, etc. Note that the material of the charge storage electrode 32 is not limited to these transparent conductors, and may be the same as the various transparent conductors exemplified in the description of the first electrode 21.

[0067] 2 and 3A, the charge storage electrode 32 is provided adjacent to the first electrode 31 via the insulating layer 40. Note that the unit U2 shown in FIG. 3A is one unit in which a floating diffusion 52 is shared by multiple (four in FIG. 3A) photoelectric conversion units 30.

[0068] The charge storage layer 33 is made of a semiconductor material that has a large band gap, fast carrier mobility, and optical transparency. The materials constituting the charge storage layer 33 may be the same as the various semiconductor materials exemplified in the description of the charge storage layer 23.

[0069] 2 and 3A to 3D, the top surface of the charge storage layer 33 contacts the bottom surface of the photoelectric conversion layer 34, and the bottom surface of the charge storage layer 33 contacts the top surface of the first electrode 31. The bottom surface of the charge storage layer 33 is adjacent to the charge storage electrode 32 via the insulating layer 40. When a predetermined voltage is applied to the charge storage electrode 32, charges photoelectrically converted in the photoelectric conversion layer 34 are stored in the charge storage layer 33.

[0070] 2, 3C, and 3D, the photoelectric conversion layer 34 is provided so as to cover the upper surface of the charge storage layer 33. The photoelectric conversion layer 34 is made of an organic semiconductor material, and performs photoelectric conversion on light of a selective wavelength (for example, green) among light L incident from the outside.

[0071] The photoelectric conversion layer 34 preferably includes one or both of a p-type organic semiconductor and an n-type organic semiconductor. Note that the p-type organic semiconductor and the n-type organic semiconductor may be made of the same materials as those exemplified in the description of the photoelectric conversion layer 24.

[0072] When photoelectric conversion layer 34 photoelectrically converts green light, photoelectric conversion layer 34 can be made of, for example, a rhodamine dye, a melacyanine dye, a quinacridone derivative, a subphthalocyanine dye (subphthalocyanine derivative), or the like.

[0073] 2, 3D, and 3E, the second electrode 35 is provided so as to be in contact with the upper surface of the photoelectric conversion layer 34. The second electrode 35 is made of a transparent conductor such as ITO, AZO, GZO, or IZO. Note that the material of the second electrode 35 is not limited to these transparent conductors, and may be the same material as the various transparent conductors exemplified in the description of the first electrode 21.

[0074] Here, in the embodiment, as shown in Figures 2 and 3D to 3J, the photoelectric conversion layer 34 of the photoelectric conversion section 30 has a protruding region 34a that protrudes from the second electrode 35 in a planar view (i.e., when viewed from the side where light L is incident).

[0075] In addition, in the embodiment, the protruding region 34a is provided so that the light incident side surface protrudes toward the light incident side from the portion of the photoelectric conversion layer 34 that contacts the second electrode 35 (i.e., the portion of the photoelectric conversion layer 34 other than the protruding region 34a).

[0076] As a result, in the embodiment, the portion corresponding to the protruding region 34a can be used as an injection port through which a liquid solvent (for example, an organic solvent) can be injected in the coating process. That is, after forming the portions of the pixel array unit 10 other than the photoelectric conversion layer 34, a liquid raw material can be injected into the portion corresponding to the photoelectric conversion layer 34 through the injection port.

[0077] Such a liquid raw material can be prepared by dissolving the raw material of the photoelectric conversion layer 34 in an organic solvent.

[0078] The liquid raw material injected into the portion corresponding to the photoelectric conversion layer 34 is then dried at a predetermined temperature, thereby forming the photoelectric conversion layer 34. In this manner, in the embodiment, the portion corresponding to the protruding region 34a is used as an injection port for injecting the liquid raw material, so that the photoelectric conversion layer 34 can be formed after a certain amount of semiconductor processing has been completed. Detailed manufacturing steps for the pixel array unit 10 according to this embodiment will be described later.

[0079] The description of other parts of the pixel array unit 10 continues. The insulating layer 40 is provided on the upper surface of the semiconductor layer 50, and is provided so as to surround the photoelectric conversion units 20 and 30. The insulating layer 40 is made of an insulator having optical transparency. The insulating layer 40 is made of, for example, silicon oxide (SiO2), silicon nitride (SiN), aluminum oxide (Al2O3), or the like.

[0080] The semiconductor layer 50 includes, for example, silicon. The semiconductor layer 50 has a photodiode 60 (see FIG. 4) at a position overlapping the photoelectric conversion section 20 and the photoelectric conversion section 30 in a plan view.

[0081] The photodiode 60 photoelectrically converts light (for example, red light) having a wavelength different from that of the light that the photoelectric conversion units 20 and 30 photoelectrically convert, out of the light L incident from the outside.

[0082] That is, one unit pixel 11 is provided with one photoelectric conversion unit 20, one photoelectric conversion unit 30, and one photodiode 60, and the photoelectric conversion unit 20, the photoelectric conversion unit 30, and the photodiode 60 perform photoelectric conversion on the three colors of light, respectively.

[0083] In this way, by stacking the photoelectric conversion unit 20, the photoelectric conversion unit 30, and the photodiode 60 in the direction of incidence of light L, it is possible to obtain all three color information in one unit pixel 11 without using a color filter.

[0084] Therefore, according to the embodiment, the attenuation of the incident light L by the color filter can be suppressed, and a high-quality image can be obtained.

[0085] In addition, in the embodiment, in one unit pixel 11, a photoelectric conversion section 20 having a photoelectric conversion layer 24 made of an organic semiconductor material and a photoelectric conversion section 30 having a photoelectric conversion layer 34 also made of an organic semiconductor material are stacked.

[0086] This allows light of a color that is not photoelectrically converted in one unit pixel 11 to be efficiently transmitted to the rear photoelectric conversion unit 30 or photodiode 60. That is, according to the embodiment, it is possible to suppress attenuation of light L in the photoelectric conversion unit 20 or the photoelectric conversion unit 30, and therefore it is possible to acquire an image of even higher quality.

[0087] Furthermore, the semiconductor layer 50 is provided with a floating diffusion 51 corresponding to the photoelectric conversion section 20 and a floating diffusion 52 corresponding to the photoelectric conversion section 30 .

[0088] The semiconductor layer 50 is provided with a plurality of pixel transistors that perform operations such as reading out the charges accumulated in the photoelectric conversion units 20, 30 and the photodiode 60, and a multi-layer wiring layer including a plurality of wiring layers and interlayer insulating films, but both are omitted from the illustration in Figures 2 to 3K.

[0089] Furthermore, an on-chip lens or the like that focuses light L is provided on the light incident side of the photoelectric conversion unit 20, but such an on-chip lens or the like is also omitted from the illustration.

[0090] [Example of circuit configuration of unit pixel] Next, an example of the circuit configuration of the unit pixel 11 will be described with reference to Fig. 4. Fig. 4 is a circuit diagram showing an example of the circuit configuration of the unit pixel 11 according to an embodiment of the present disclosure.

[0091] The unit pixel 11 has a floating diffusion 51, a reset transistor 61R, an amplification transistor 61A, and a selection transistor 61S as circuits that perform operations such as reading out electric charges from the photoelectric conversion unit 20.

[0092] In the photoelectric conversion unit 20, during the charge accumulation period, a predetermined voltage is applied from a drive circuit (not shown) to the first electrode 21, the charge accumulation electrode 22, and the second electrode 25. For example, during the charge accumulation period, a positive voltage is applied to the first electrode 21 and the charge accumulation electrode 22, and a negative voltage is applied to the second electrode 25. Furthermore, during the charge accumulation period, a larger positive voltage is applied to the charge accumulation electrode 22 than to the first electrode 21.

[0093] As a result, during the charge accumulation period, electrons contained in the charges generated by photoelectric conversion in the photoelectric conversion layer 24 are attracted by the large positive voltage of the charge accumulation electrode 22 and accumulated in the charge accumulation layer 23.

[0094] Furthermore, in the unit pixel 11, a reset operation is performed by operating the reset transistor 61R in the latter part of the charge accumulation period, thereby resetting the potential of the floating diffusion 51 to the power supply voltage Vdd.

[0095] After the reset operation is completed, a charge transfer operation is performed in the unit pixel 11. In the charge transfer operation, a positive voltage higher than that of the charge storage electrode 22 is applied to the first electrode 21 from the drive circuit. As a result, the electrons stored in the charge storage layer 23 are transferred to the floating diffusion 51 via the first electrode 21.

[0096] In the unit pixel 11, the series of operations including the charge accumulation operation, reset operation, and charge transfer operation are completed by the above operations.

[0097] The floating diffusion 51 holds the charge read out from the photoelectric conversion unit 20. When the reset transistor 61R is turned on by a reset signal RST1, it resets the potential of the floating diffusion 51 by discharging the charge accumulated in the floating diffusion 51 to the drain (power supply voltage Vdd).

[0098] The amplification transistor 61A outputs a pixel signal indicating a level corresponding to the charge accumulated in the floating diffusion 51 to the signal line VSL1 via the selection transistor 61S. The selection transistor 61S is turned on when the unit pixel 11 is selected by the selection signal SEL1, and outputs the pixel signal generated by the photoelectric conversion unit 20 to the vertical signal line VSL1.

[0099] Furthermore, the unit pixel 11 has, as circuits that perform operations such as reading out charges from the photoelectric conversion unit 30, a floating diffusion 52, a reset transistor 62R, an amplification transistor 62A, and a selection transistor 62S.

[0100] The configuration and operation of the circuit that reads out charges from the photoelectric conversion unit 30 are similar to the circuit that reads out charges from the photoelectric conversion unit 20 described above, and therefore detailed description thereof will be omitted.

[0101] Furthermore, the unit pixel 11 has, as circuits for reading out charges from the photodiode 60, a transfer transistor 63T, a floating diffusion 53, a reset transistor 63R, an amplification transistor 63A, and a selection transistor 63S.

[0102] The photodiode 60 generates and accumulates electric charges according to the amount of light received. The photodiode 60 has an anode terminal grounded and a cathode terminal connected to the floating diffusion 53 via a transfer transistor 63T.

[0103] The transfer transistor 63T reads out the charge generated in the photodiode 60 and transfers it to the floating diffusion 53 when it is turned on by a transfer signal TG3.

[0104] The floating diffusion 53 holds the charge read out from the photodiode 60. When the reset transistor 63R is turned on by a reset signal RST3, it discharges the charge accumulated in the floating diffusion 53 to the drain (power supply voltage Vdd), thereby resetting the potential of the floating diffusion 53.

[0105] The amplification transistor 63A outputs a pixel signal indicating a level corresponding to the charge accumulated in the floating diffusion 53 to the signal line VSL3 via the selection transistor 63S. The selection transistor 63S is turned on when the unit pixel 11 is selected by the selection signal SEL3, and outputs the pixel signal generated by the photodiode 60 to the vertical signal line VSL3.

[0106] In the pixel array unit 10 according to the embodiment, reset noise during the reset operation by the reset transistor 61R can be reduced by providing the charge storage electrode 22 and the charge storage layer 23 in the photoelectric conversion unit 20. Therefore, according to the embodiment, a high-quality image can be obtained.

[0107] Furthermore, in the pixel array unit 10 according to the embodiment, reset noise during the reset operation by the reset transistor 62R can be reduced by providing the charge storage electrode 32 and the charge storage layer 33 in the photoelectric conversion unit 30. Therefore, according to the embodiment, a high-quality image can be acquired.

[0108] Furthermore, in the pixel array unit 10 according to the embodiment, as described above, the multiple photoelectric conversion units 20 included in the unit U1 (see FIG. 3G) share the floating diffusion 51. This eliminates the need to provide individual floating diffusions 51 for all the photoelectric conversion units 20, thereby simplifying the circuit configuration within the pixel array unit 10.

[0109] Therefore, according to the embodiment, the manufacturing cost of the pixel array unit 10 can be reduced.

[0110] Similarly, in the pixel array unit 10 according to the embodiment, the multiple photoelectric conversion units 30 included in the unit U2 (see FIG. 3A) share the floating diffusion 52. This eliminates the need to provide individual floating diffusions 52 for all the photoelectric conversion units 30, thereby simplifying the circuit configuration within the pixel array unit 10.

[0111] Therefore, according to the embodiment, the manufacturing cost of the pixel array unit 10 can be reduced.

[0112] In the pixel array unit 10 according to the embodiment, multiple photodiodes 60 may share the floating diffusion 53. This eliminates the need to provide individual floating diffusions 53 for all photodiodes 60, thereby simplifying the circuit configuration within the pixel array unit 10.

[0113] Therefore, according to the embodiment, the manufacturing cost of the pixel array unit 10 can be reduced.

[0114] The circuit in the unit pixel 11 can be configured as described above, but is not limited to this configuration and other configurations can also be adopted.

[0115] For example, as shown in Fig. 5, by using the protruding region 34a of the photoelectric conversion layer 34 as a light-shielding layer, photoelectrically converted charges can be held in the charge holding region 54 of the semiconductor layer 50 provided below the protruding region 34a. Fig. 5 is a cross-sectional view schematically showing the structure of a pixel array unit 10 according to another embodiment of the present disclosure.

[0116] In the example of FIG. 5, photoelectrically converted charges are transferred to the charge holding region 54 simultaneously for all pixels, thereby providing the photoelectric conversion unit 30 of the pixel array unit 10 with a global shutter function.

[0117] 6, the protruding region 34a of the photoelectric conversion layer 34 is used as a light-shielding layer, and a charge retention electrode 36 is provided below the protruding region 34a, thereby making it possible to retain photoelectrically converted charges in the charge retention region 33a of the charge storage layer 33 provided below the protruding region 34a. Figure 6 is a cross-sectional view schematically showing the structure of a pixel array section 10 according to another embodiment of the present disclosure.

[0118] In the example of FIG. 6, photoelectrically converted charges are transferred to the charge holding regions 33a of all pixels simultaneously, thereby providing the photoelectric conversion unit 30 of the pixel array unit 10 with a global shutter function.

[0119] In addition, since no voltage is applied to the protruding region 34a via the second electrode 25 or the like, the photoelectrically converted charges remain in the protruding region 34a as they are. Therefore, in the embodiment, the protruding region 34a can be used as a substantial light-shielding layer.

[0120] 5 and 6, when the protruding region 34a of the photoelectric conversion layer 34 protrudes toward the light incident side from the portion that contacts the second electrode 35 and is provided so as to reach the second electrode 25, the protruding region 34a has high light blocking performance. Therefore, by providing the protruding region 34a so as to protrude toward the light incident side, a highly accurate global shutter function can be provided.

[0121] 7, the unit pixel 11 may be configured by excluding the charge storage electrode 22 and the charge storage layer 23 from the photoelectric conversion unit 20, and by excluding the charge storage electrode 32 and the charge storage layer 33 from the photoelectric conversion unit 30. Fig. 7 is a cross-sectional view schematically showing the structure of a pixel array unit 10 according to another embodiment of the present disclosure.

[0122] That is, in the example of FIG. 7, the photoelectric conversion section 20 is composed of a first electrode 21, a photoelectric conversion layer 24, and a second electrode 25, and the photoelectric conversion section 30 is composed of a first electrode 31, a photoelectric conversion layer 34, and a second electrode 35.

[0123] In the example of FIG. 7, after a reset operation by a reset transistor (not shown), a positive voltage is applied to the first electrode 21 (or the first electrode 31), and a negative voltage is applied to the second electrode 25 (or the second electrode 35).

[0124] As a result, electrons contained in charges generated by photoelectric conversion in the photoelectric conversion layer 24 (or the photoelectric conversion layer 34) move to the first electrode 21 (or the first electrode 31). Then, the electrons that have moved to the first electrode 21 (or the first electrode 31) are transferred to the floating diffusion 51 (or the floating diffusion 52).

[0125] In the example of FIG. 7, the charge storage electrodes 22 and 32 and the charge storage layers 23 and 33 do not need to be formed, and therefore the manufacturing cost of the pixel array section 10 can be reduced.

[0126] [Various variations] Next, various modified examples of the embodiment will be described with reference to Figures 8 to 13. Figure 8 is a cross-sectional view that schematically shows the structure of a pixel array section 10 according to Modification 1 of the embodiment of the present disclosure.

[0127] In Modification 1, the configuration of the protruding region 34a in the photoelectric conversion layer 34 is different from that of the embodiment. Specifically, in Modification 1, the surface of the protruding region 34a on the light incident side is provided so as to protrude toward the light incident side beyond the portion of the photoelectric conversion layer 34 that contacts the second electrode 35, but does not reach the second electrode 25.

[0128] In this first modification, as in the embodiment, the portion corresponding to the protruding region 34a can be used as an injection port into which a liquid raw material can be injected. That is, after forming the portions of the pixel array unit 10 other than the photoelectric conversion layer 34, the liquid raw material can be injected into the portion corresponding to the photoelectric conversion layer 34 through the injection port.

[0129] The liquid raw material injected into the portion corresponding to the photoelectric conversion layer 34 is then dried at a predetermined temperature, thereby forming the photoelectric conversion layer 34. Therefore, according to Modification 1, the photoelectric conversion layer 34 can be formed after a certain amount of semiconductor processing has been completed. Detailed manufacturing steps for the pixel array section 10 according to Modification 1 will be described later.

[0130] FIG. 9 is a cross-sectional view schematically showing the structure of the pixel array section 10 according to the second modification of the embodiment of the present disclosure.

[0131] In Modification 2, the configuration of the protruding region 34a in the photoelectric conversion layer 34 differs from that of the embodiment and Modification 1. Specifically, in Modification 2, the portion of the protruding region 34a of the photoelectric conversion layer 34 that contacts the second electrode 35 and the surface on the light incident side are substantially flush with each other.

[0132] In this modification 2, as in the embodiment, the portion corresponding to the protruding region 34a can be used as an injection port into which a liquid raw material can be injected. That is, after forming the portions of the pixel array unit 10 other than the photoelectric conversion layer 34, the liquid raw material can be injected into the portion corresponding to the photoelectric conversion layer 34 through the injection port.

[0133] The liquid raw material injected into the portion corresponding to the photoelectric conversion layer 34 is then dried at a predetermined temperature, thereby forming the photoelectric conversion layer 34. Therefore, according to Modification 2, the photoelectric conversion layer 34 can be formed after a certain amount of semiconductor processing has been completed. Note that the detailed manufacturing process of the pixel array section 10 according to Modification 2 will be described later.

[0134] FIG. 10 is a cross-sectional view schematically illustrating the structure of the pixel array section 10 according to the third modification of the embodiment of the present disclosure.

[0135] In Modification 3, the configuration of the photoelectric conversion layer 24 in the photoelectric conversion unit 20 is different from that of the embodiment. Specifically, like the photoelectric conversion layer 34, the photoelectric conversion layer 24 in Modification 3 has a protruding region 24a that protrudes from the second electrode 25 in a planar view.

[0136] In addition, in variant example 3, the protruding region 24a is provided so that the light incident side surface protrudes toward the light incident side from the portion of the photoelectric conversion layer 24 that contacts the second electrode 25 (i.e., the portion of the photoelectric conversion layer 24 other than the protruding region 24a).

[0137] In Modification 3, the portion corresponding to the protruding region 24a can be used as an injection port into which a liquid raw material can be injected. That is, after forming the portions of the pixel array unit 10 other than the photoelectric conversion layer 24, the liquid raw material can be injected into the portion corresponding to the photoelectric conversion layer 24 through the injection port.

[0138] The liquid raw material injected into the portion corresponding to the photoelectric conversion layer 24 is then dried at a predetermined temperature, thereby forming the photoelectric conversion layer 24. Therefore, according to the third modification, after a certain amount of semiconductor processing is completed, the photoelectric conversion layer 24 of the photoelectric conversion unit 20 can also be formed in addition to the photoelectric conversion layer 34 of the photoelectric conversion unit 30. The detailed manufacturing process of the pixel array unit 10 according to the third modification will be described later.

[0139] FIG. 11 is a cross-sectional view schematically showing the structure of the pixel array section 10 according to the fourth modification of the embodiment of the present disclosure.

[0140] As shown in FIG. 11, in the pixel array section 10 according to the fourth modification, the photoelectric conversion layer 24 of the photoelectric conversion section 20 is provided with an overhanging region 24a, and the photoelectric conversion layer 34 of the photoelectric conversion section 30 is provided with an overhanging region 34a.

[0141] Furthermore, in Modification 4, another photoelectric conversion unit 70 is provided on the light incident side of the photoelectric conversion unit 20. The photoelectric conversion unit 70 is provided on the upper surface side of the photoelectric conversion unit 20 so as to be stacked on the photoelectric conversion unit 20. The photoelectric conversion unit 70 has a first electrode 71, a charge storage electrode 72, a charge storage layer 73, a photoelectric conversion layer 74, and a second electrode 75.

[0142] 11, the first electrode 71 is provided on the side opposite to the light incident side of the photoelectric conversion body 70. The first electrode 71 has an upper surface that contacts the bottom surface of the charge storage layer 73.

[0143] Furthermore, the first electrode 71 extends in the depth direction within the insulating layer 40 and is connected to the floating diffusion 53 provided in the semiconductor layer 50. In other words, the first electrode 71 electrically connects the charge storage layer 73 and the floating diffusion 53.

[0144] The first electrode 71 is made of a transparent conductor such as ITO, AZO, GZO, IZO, etc. Note that the material of the first electrode 71 is not limited to these transparent conductors, and may be the same material as the various transparent conductors exemplified in the description of the first electrode 21.

[0145] The charge storage electrode 72 is made of a transparent conductor such as ITO, AZO, GZO, or IZO. Note that the constituent material of the charge storage electrode 72 is not limited to these transparent conductors, and may be the same materials as the various transparent conductors exemplified in the description of the first electrode 21. The charge storage electrode 72 is provided adjacent to the first electrode 71 with the insulating layer 40 interposed therebetween.

[0146] The charge storage layer 73 is made of a semiconductor material that has a large band gap, fast carrier mobility, and optical transparency. The material constituting the charge storage layer 73 may be the same as the various semiconductor materials exemplified in the description of the charge storage layer 23.

[0147] The top surface of the charge storage layer 73 contacts the bottom surface of the photoelectric conversion layer 74, and the bottom surface of the charge storage layer 73 contacts the top surface of the first electrode 71. The bottom surface of the charge storage layer 73 is adjacent to the charge storage electrode 72 via the insulating layer 40. When a predetermined voltage is applied to the charge storage electrode 72, charges photoelectrically converted in the photoelectric conversion layer 74 are stored in the charge storage layer 73.

[0148] The photoelectric conversion layer 74 is provided so as to cover the upper surface of the charge storage layer 73. The photoelectric conversion layer 74 is made of an organic semiconductor, and performs photoelectric conversion on light of a selective wavelength (for example, red) among light L incident from the outside.

[0149] The photoelectric conversion layer 74 preferably includes one or both of a p-type organic semiconductor and an n-type organic semiconductor. Note that the p-type organic semiconductor and the n-type organic semiconductor may be made of the same materials as those exemplified in the description of the photoelectric conversion layer 24.

[0150] When photoelectric conversion layer 74 photoelectrically converts red light, photoelectric conversion layer 74 can be made of, for example, a phthalocyanine dye, a subphthalocyanine dye (subphthalocyanine derivative), or the like.

[0151] The second electrode 75 is provided so as to be in contact with the upper surface of the photoelectric conversion layer 74. The second electrode 75 is made of a transparent conductor such as ITO, AZO, GZO, or IZO. Note that the constituent material of the second electrode 75 is not limited to these transparent conductors, and may be the same material as the various transparent conductors exemplified in the description of the first electrode 21.

[0152] As described above, in the fourth modification, in one unit pixel 11, the photoelectric conversion section 70 having the photoelectric conversion layer 74 made of an organic semiconductor material is further stacked on the photoelectric conversion sections 20 and 30.

[0153] This allows light of a color that is not photoelectrically converted in one unit pixel 11 to be more efficiently transmitted to the photoelectric conversion unit 20 or the photoelectric conversion unit 30 at the back side. That is, according to the fourth modification, it is possible to suppress attenuation of light L in the photoelectric conversion unit 70 or the photoelectric conversion unit 20, and therefore it is possible to acquire an image of even higher quality. Detailed manufacturing steps for the pixel array unit 10 according to the fourth modification will be described later.

[0154] 12 is a circuit diagram showing a circuit configuration of a unit pixel 11 according to Modification 4 of the embodiment of the present disclosure. The unit pixel 11 has a floating diffusion 53, a reset transistor 63R, an amplification transistor 63A, and a selection transistor 63S as circuits that perform operations such as reading out charges from the photoelectric conversion unit 70.

[0155] The operation of the circuit that performs the readout of charges from the photoelectric conversion unit 70 is similar to that of the circuit that performs the readout of charges from the photoelectric conversion unit 20 described above, and therefore a detailed description thereof will be omitted. Furthermore, the configuration and operation of the circuit that performs the readout of charges from the photoelectric conversion unit 20 and the photoelectric conversion unit 30 are also similar to those in the above-described embodiment, and therefore a detailed description thereof will be omitted.

[0156] In the pixel array unit 10 according to the fourth modification, multiple photoelectric conversion units 70 may share the floating diffusion 53. This eliminates the need to provide individual floating diffusions 53 for all photoelectric conversion units 70, thereby simplifying the circuit configuration within the pixel array unit 10.

[0157] Therefore, according to the fourth modification, the manufacturing cost of the pixel array section 10 can be reduced.

[0158] 13, the photoelectric conversion unit 20, the photoelectric conversion unit 30, and the photoelectric conversion unit 70 provided in one unit pixel 11 may share a floating diffusion 51. Fig. 13 is a cross-sectional view schematically showing the structure of a pixel array unit 10 according to a fifth modification of the embodiment of the present disclosure.

[0159] This eliminates the need to provide separate floating diffusions 52 and 53 for the photoelectric conversion section 30 and the photoelectric conversion section 70, thereby simplifying the circuit configuration within the pixel array section 10.

[0160] Therefore, according to the fifth modification, the manufacturing cost of the pixel array section 10 can be reduced.

[0161] The order of the three colors photoelectrically converted by the photoelectric conversion units 20, 30, and 70 and the photodiode 60 shown in the above-described embodiment and various modifications is not limited to the above-described example, and any order may be used.

[0162] Furthermore, in the above-described embodiments and various modified examples, examples have been shown in which the photoelectric conversion layers 24, 34, and 74 are composed of a single layer, but the photoelectric conversion layers 24, 34, and 74 are not limited to being composed of a single layer and may be composed of a multi-layer structure.

[0163] For example, the photoelectric conversion layers 24, 34, 74 may have, in addition to a layer that converts light L into electricity, an electron injection prevention layer that prevents injection of electrons from the second electrodes 25, 35, 75 on the light incident side of the photoelectric conversion layer.

[0164] Furthermore, the photoelectric conversion layers 24, 34, and 74 may have an electron transport layer that transports electrons on the side opposite to the light incident side of the photoelectric conversion layer, in addition to the layer that converts light L into electricity. Furthermore, the photoelectric conversion layers 24, 34, and 74 may have both the above-mentioned electron injection preventing layer and electron transport layer, in addition to the layer that converts light L into electricity.

[0165] Furthermore, in the above-described embodiments and various modified examples, examples have been shown in which the unit pixel 11 has three layers of photoelectric conversion units and photodiodes, but the photoelectric conversion units and photodiodes provided in the unit pixel 11 are not limited to three layers, and may be one layer, two layers, or four or more layers.

[0166] [Manufacturing process details] <Manufacturing process of the embodiment> Next, details of the manufacturing process in the embodiment and various modified examples will be described with reference to Figures 14A to 22. Figures 14A to 14U are cross-sectional views schematically showing one manufacturing process of the pixel array unit 10 according to the embodiment of the present disclosure.

[0167] In the drawings used to explain the manufacturing process in detail below, the semiconductor layer 50 (see FIG. 2) is omitted for ease of understanding. The photodiode 60, various pixel transistors, various wirings, floating diffusions 51 to 53, and the like shown in FIG. 4 are already formed on the semiconductor layer 50.

[0168] Various steps for forming the photoelectric conversion section 20 and the photoelectric conversion section 30 on the surface of the semiconductor layer 50 will be described below.

[0169] 14A, an insulating layer 40 is formed on the surface of a semiconductor layer 50 (see FIG. 2), and a first electrode 31 (see FIG. 2), not shown, and a charge storage electrode 32 are formed inside the insulating layer 40. Then, a charge storage layer 33 is formed on the surface of the insulating layer 40 so as to cover the first electrode 31 and the insulating layer 40.

[0170] The charge storage layer 33 is provided so as to be in contact with the surface of the first electrode 21 and adjacent to the charge storage electrode 22 via the insulating layer 40. Here, the insulating layer 40, the first electrode 31, and the charge storage electrode 32 can be formed by any conventionally known method. For ease of understanding, the first electrode 31 is not shown in the following drawings.

[0171] 14B, the removed material R and the second electrode 35 are sequentially formed on the surface of the charge storage layer 33. The removed material R is provided at a position corresponding to the photoelectric conversion layer 34 in the pixel array section 10.

[0172] The removal material R is a material that can be removed by a predetermined process, such as a resist material that can be removed by chemical etching. Note that the removal material R is not limited to a resist material, and may be any other material that can be removed by a predetermined process. Furthermore, the method for forming the removal material R and the second electrode 35 can be appropriately selected from conventionally known methods.

[0173] Next, as shown in FIG. 14C, predetermined regions of the second electrode 35, the removed material R, and the charge storage layer 33 are etched by a conventionally known method to form an etched region E1.

[0174] Next, as shown in FIG. 14D, an insulating layer 40 is formed to fill the etching region E1 and to cover the surface of the second electrode .

[0175] 14E, predetermined regions of the insulating layer 40, the second electrode 35, and the removed material R are etched by a conventionally known method to form an etched region E2. Note that the etched region E2 is formed at a position corresponding to the protruding region 34a in the pixel array section 10, and is formed so as not to penetrate the removed material R.

[0176] 14F, a removal material R is formed to fill the etching region E2 and cover the surface of the insulating layer 40. Then, as shown in FIG. 14G, the removal material R is removed so that the surface of the insulating layer 40 and the surface of the removal material R are substantially flush with each other.

[0177] 14H, an insulating layer 40 is formed so as to cover the surface of the insulating layer 40 and the surface of the removed material R. Then, as shown in FIG. 14I, a charge storage electrode 22 is formed so as to cover the surface of the insulating layer 40.

[0178] Next, as shown in Fig. 14J, a predetermined region of the charge-storage electrode 22 is etched by a conventionally known method to form an etching region E3. Then, as shown in Fig. 14K, an insulating layer 40 is formed to fill the etching region E3 and cover the surface of the charge-storage electrode 22.

[0179] Next, as shown in Fig. 14L, the charge storage layer 23 is formed so as to cover the surface of the insulating layer 40. Note that in each step up to Fig. 14L, the first electrode 21 (see Fig. 2) of the photoelectric conversion body 20 is also formed in parallel, but the illustration and description of the formation process of the first electrode 21 will be omitted.

[0180] Next, as shown in Fig. 14M, a predetermined region of the charge storage layer 23 is etched by a conventionally known method to form an etching region E4. Then, as shown in Fig. 14N, an insulating layer 40 is formed to fill the etching region E4 and cover the surface of the charge storage layer 23.

[0181] 14O, a predetermined region of the insulating layer 40 is etched by a conventionally known method to form an etching region E5. Note that the etching region E5 is formed so as to reach the removed material R that is formed to protrude toward the light incident side.

[0182] Next, as shown in Fig. 14P, a removal material R is formed to fill the etching region E5. Then, as shown in Fig. 14Q, the removal material R is removed by a predetermined process (e.g., chemical etching), and a void V1 is formed in the region where the removal material R was provided.

[0183] In the embodiment, an annealing process is performed at a predetermined temperature in a state where the gap V1 shown in FIG. 14Q is formed.

[0184] 14Q, neither the photoelectric conversion layer 24 nor the photoelectric conversion layer 34 made of an organic semiconductor material is formed, and therefore, annealing can be performed at a desired temperature without worrying about damage to the photoelectric conversion layer 24 and the photoelectric conversion layer 34. Therefore, according to the embodiment, elements with good characteristics can be formed in the pixel array section 10.

[0185] 14R, a liquid raw material for the photoelectric conversion layer 34 is injected through an injection port H that opens upward from the void V1 so as to fill the void V1. Then, the liquid raw material injected into the void V1 is dried at a predetermined temperature, thereby forming the photoelectric conversion layer 34 in the void V1.

[0186] Here, since the gap V1 is formed between the charge storage layer 33 and the second electrode 35, in the embodiment, a photoelectric conversion layer 34 can be formed between the charge storage layer 33 and the second electrode 35.

[0187] Next, as shown in Fig. 14S, the insulating layer 40 and the photoelectric conversion layer 34 are removed by a conventionally known method so that the surfaces of the charge storage layer 23, the insulating layer 40, and the photoelectric conversion layer 34 are approximately flush with each other. Then, as shown in Fig. 14T, the photoelectric conversion layer 24 is formed by a conventionally known method so as to cover the surfaces of the charge storage layer 23, the insulating layer 40, and the photoelectric conversion layer 34.

[0188] For example, a liquid raw material for the photoelectric conversion layer 24 is applied to the surfaces of the charge storage layer 23, the insulating layer 40, and the photoelectric conversion layer 34, and the liquid raw material is dried at a predetermined temperature to form the photoelectric conversion layer 24. Note that the process for forming the photoelectric conversion layer 24 is not limited to the above-mentioned method, and other methods such as vapor phase growth may also be used.

[0189] Finally, as shown in FIG. 14U, the second electrode 25 is formed by a conventionally known method so as to cover the surface of the photoelectric conversion layer 24, thereby completing the manufacturing process of the pixel array section 10 according to the embodiment.

[0190] <Manufacturing Process of Modified Example 1> 15A to 15E are cross-sectional views schematically showing a manufacturing process of the pixel array unit 10 according to Modification 1 of the embodiment of the present disclosure. Note that the steps up to the middle of the manufacturing process in Modification 1 are similar to the steps shown in FIGS. 14A to 14Q, and therefore description thereof will be omitted.

[0191] 14Q, an annealing process is performed at a predetermined temperature while the void V1 is formed. Then, as shown in FIG. 15A, a liquid raw material for the photoelectric conversion layer 34 is injected through an injection port H that opens upward from the void V1 so as not to fill the void V1.

[0192] Furthermore, the liquid raw material injected into the void V1 is dried at a predetermined temperature to form the photoelectric conversion layer 34 in the void V1. Note that, since the liquid raw material for the photoelectric conversion layer 34 is injected so as not to fill the void V1, part of the void V1 remains as a void V1a.

[0193] Next, as shown in FIG. 15B, an insulating layer 40 is formed to fill the gap V1a and cover the surface of the insulating layer 40.

[0194] 15C, the insulating layer 40 is removed by a conventionally known method so that the surface of the charge storage layer 23 and the surface of the insulating layer 40 are substantially flush with each other. Then, as shown in FIG. 15D, the photoelectric conversion layer 24 is formed by a conventionally known method so as to cover the surfaces of the charge storage layer 23 and the insulating layer 40.

[0195] Finally, as shown in FIG. 15E, the second electrode 25 is formed by a conventionally known method so as to cover the surface of the photoelectric conversion layer 24, thereby completing the manufacturing process of the pixel array section 10 according to the first modification of the embodiment.

[0196] <Manufacturing Process of Modified Example 2> 16A to 16E are cross-sectional views schematically showing a manufacturing process of the pixel array unit 10 according to Modification 2 of the embodiment of the present disclosure. Note that the steps up to the middle of the manufacturing process in Modification 2 are similar to the steps shown in FIGS. 14A to 14Q, and therefore description thereof will be omitted.

[0197] 14Q, an annealing process is performed at a predetermined temperature while the void V1 is formed. Then, as shown in FIG. 16A, a liquid raw material for the photoelectric conversion layer 34 is injected through an injection port H that opens upward from the void V1 so that the liquid level is approximately flush with the bottom surface of the second electrode 35.

[0198] Furthermore, the liquid raw material poured into the void V1 is dried at a predetermined temperature to form the photoelectric conversion layer 34 in the void V1. Note that, since the liquid raw material for the photoelectric conversion layer 34 is poured so that the bottom surface of the second electrode 35 and the liquid surface are approximately flush with each other, a part of the void V1 remains as a void V1b.

[0199] Next, as shown in FIG. 16B, an insulating layer 40 is formed to fill the gap V1b and cover the surface of the insulating layer 40.

[0200] 16C, the insulating layer 40 is removed so that the surface of the charge storage layer 23 and the surface of the insulating layer 40 are substantially flush with each other. Then, as shown in FIG. 16D, the photoelectric conversion layer 24 is formed to cover the surfaces of the charge storage layer 23 and the insulating layer 40.

[0201] Finally, as shown in FIG. 16E, the second electrode 25 is formed so as to cover the surface of the photoelectric conversion layer 24, thereby completing the manufacturing process of the pixel array section 10 according to the second modification of the embodiment.

[0202] <Manufacturing process of modified example 3> 17A to 17I are cross-sectional views schematically showing a manufacturing process of the pixel array unit 10 according to Modification 3 of the embodiment of the present disclosure. Note that the steps up to the middle of the manufacturing process in Modification 3 are similar to the steps shown in FIGS. 14A to 14P, and therefore description thereof will be omitted.

[0203] 14P, as shown in Fig. 17A, the insulating layer 40 and the removed material R are removed so that the surfaces of the charge accumulation layer 23, the insulating layer 40, and the removed material R are substantially flush with each other. Furthermore, an insulating layer 40 is formed on the surface of the insulating layer 40 provided between the charge accumulation layer 23 and the removed material R.

[0204] 17B, ​​a removal material R is formed to cover the surface of the charge accumulation layer 23 and the surface of the removal material R, and to be approximately flush with the insulating layer 40. Then, as shown in FIG. 17C, a second electrode 25 is formed to cover the surfaces of the removal material R and the insulating layer 40.

[0205] 17D, a predetermined region of the second electrode 25 is etched by a conventionally known method to form an etching region E6. Note that the etching region E6 is provided so as to expose the removed material R formed on the surface of the charge storage layer 23 and the removed material R formed on the surface of the charge storage layer 33.

[0206] 17E, the removed material R is removed by a predetermined process (for example, chemical etching), and gaps V2 and V3 are formed in the areas where the removed material R was provided. Note that the gap V2 is a gap formed between the charge storage layer 33 and the second electrode 35, and the gap V3 is a gap formed between the charge storage layer 23 and the second electrode 25.

[0207] In the third modification, annealing is performed at a predetermined temperature in a state where the gaps V2 and V3 shown in FIG. 17E are formed.

[0208] 17F, a mask M1 is formed so as to cover the opening of the gap V3. The mask M1 is, for example, a metal mask, and is formed by a conventionally known method.

[0209] Next, as shown in Fig. 17G, a liquid raw material for the photoelectric conversion layer 34 is injected through injection port H, which opens upward from gap V2, so as to fill gap V2. The liquid raw material injected into gap V2 is then dried at a predetermined temperature, thereby forming the photoelectric conversion layer 34 in gap V2. Then, as shown in Fig. 17H, the mask M1 is removed by a conventionally known method.

[0210] 17I, a liquid raw material for the photoelectric conversion layer 24 is injected through an injection port H that opens upward from the void V3 so as to fill the void V3. Finally, the liquid raw material injected into the void V3 is dried at a predetermined temperature to form the photoelectric conversion layer 24 in the void V3, thereby completing the manufacturing process for the pixel array unit 10 according to the third modification of the embodiment.

[0211] In the above example, the annealing process is performed in the state shown in FIG. 17E. However, the annealing process is not limited to the state shown in FIG. 17E, and may be performed in the state shown in FIG. 17F.

[0212] <Another Example of Manufacturing Process of Modified Example 3> 18A to 18F are cross-sectional views schematically showing a manufacturing process of the pixel array unit 10 according to another example of Modification 3 of the embodiment of the present disclosure. Note that the steps up to the middle of the manufacturing process in this example are similar to the steps shown in FIGS. 14A to 14P, and therefore description thereof will be omitted.

[0213] 14P, as shown in Fig. 18A, the insulating layer 40 and the removed material R are removed so that the surfaces of the charge accumulation layer 23, the insulating layer 40, and the removed material R are substantially flush with each other. Furthermore, the removed material R is formed so as to cover the surfaces of the charge accumulation layer 23, the insulating layer 40, and the removed material R.

[0214] Next, as shown in Fig. 18B, a second electrode 25 is formed so as to cover the surface of the removed material R. Then, as shown in Fig. 18C, a predetermined region of the second electrode 25 is etched to form an etched region E7. Note that the etched region E7 is provided so as to expose the removed material R.

[0215] 18D, the removal material R is removed by a predetermined process (for example, chemical etching), and a void V4 is formed in the region where the removal material R was provided. Then, in Modification 3, an annealing process is performed at a predetermined temperature in a state where the void V4 shown in FIG. 18D is formed.

[0216] 18E, a liquid raw material for the photoelectric conversion layer 34 is injected through an injection port H that opens upward from the void V4 so that the liquid level is approximately flush with the upper surface of the charge storage layer 23. Then, the liquid raw material injected into the void V4 is dried at a predetermined temperature, thereby forming the photoelectric conversion layer 34 in the void V4.

[0217] Since the liquid raw material of the photoelectric conversion layer 34 is poured so that the liquid level is approximately flush with the upper surface of the charge storage layer 23, a part of the void V4 remains as a void V4a. The upper surface of the charge storage layer 23 and the upper surface of the photoelectric conversion layer 34 do not have to be approximately flush with each other.

[0218] 18F, a liquid raw material for the photoelectric conversion layer 24 is injected into the void V4a through the injection port H that opens upward from the void V4a so as to fill the void V4a. Finally, the liquid raw material injected into the void V4a is dried at a predetermined temperature, thereby forming the photoelectric conversion layer 24 in the void V4a, and the manufacturing process for the pixel array unit 10 according to another example of Modification 3 is completed.

[0219] <Manufacturing Process of Modified Example 4> 19A to 19L are cross-sectional views schematically showing a manufacturing process of the pixel array unit 10 according to Modification 4 of the embodiment of the present disclosure. Note that the steps up to the middle of the manufacturing process in Modification 4 are similar to the steps shown in FIGS. 14A to 14P and 17A to 17D, and therefore description thereof will be omitted.

[0220] 17D, as shown in Fig. 19A, an insulating layer 40 is formed to fill the etching region E6 and cover the surface of the second electrode 35. Then, as shown in Fig. 19B, a charge storage electrode 72 is formed to cover the surface of the insulating layer 40.

[0221] 19C, a predetermined region of the charge-storage electrode 72 is etched by a conventionally known method to form an etching region E8. Then, as shown in FIG. 19D, an insulating layer 40 is formed to fill the etching region E8 and cover the surface of the charge-storage electrode 72.

[0222] 19E, a charge storage layer 73 is formed to cover the surface of the insulating layer 40, and the insulating layer 40 is formed to cover the surface of the charge storage layer 73. Note that in each step up to FIG. 19E, the first electrode 71 (see FIG. 11) of the photoelectric conversion unit 70 is also formed in parallel, but the formation process of the first electrode 71 will not be illustrated or described.

[0223] 19F, predetermined regions of the insulating layer 40 and the charge storage layer 73 are etched by a conventionally known method to form etched regions E9. Note that the etched regions E9 are provided so as to expose the removed material R formed on the surface of the charge storage layer 23 and the removed material R formed on the surface of the charge storage layer 33.

[0224] 19G, the removed material R is removed by a predetermined process (for example, chemical etching), and gaps V5 and V6 are formed in the areas where the removed material R was provided. Note that the gap V5 is a gap formed between the charge storage layer 33 and the second electrode 35, and the gap V6 is a gap formed between the charge storage layer 23 and the second electrode 25.

[0225] In the fourth modification, annealing is performed at a predetermined temperature in a state where the gaps V5 and V6 shown in FIG. 19G are formed.

[0226] 19H, a mask M2 is formed to cover the opening of the void V6. The mask M2 is, for example, a metal mask, and is formed by a conventionally known method. Then, a liquid raw material for the photoelectric conversion layer 34 is injected through an injection port H that opens upward from the void V5 so as to fill the void V5.

[0227] Furthermore, the liquid raw material poured into the gap V5 is dried at a predetermined temperature, thereby forming the photoelectric conversion layer 34 in the gap V5.

[0228] 19I, the mask M1 is removed by a conventionally known method, and a liquid raw material for the photoelectric conversion layer 24 is injected through an injection port H that opens upward from the cavity V6 so as to fill the cavity V6.

[0229] Furthermore, the liquid raw material poured into the gap V6 is dried at a predetermined temperature, thereby forming the photoelectric conversion layer 24 in the gap V6.

[0230] Next, as shown in FIG. 19J, the insulating layer 40, the photoelectric conversion layer 24, and the photoelectric conversion layer 34 are removed so that the surfaces of the charge storage layer 73, the photoelectric conversion layer 24, and the photoelectric conversion layer 34 are approximately flush with each other.

[0231] Next, as shown in FIG. 19K, a photoelectric conversion layer 74 is formed by a conventionally known method so as to cover the surfaces of the charge storage layer 73, the photoelectric conversion layer 24, and the photoelectric conversion layer .

[0232] For example, a liquid raw material for the photoelectric conversion layer 74 is applied to the surfaces of the charge storage layer 73, the photoelectric conversion layer 24, and the photoelectric conversion layer 34, and the liquid raw material is dried at a predetermined temperature to form the photoelectric conversion layer 74. Note that the process for forming the photoelectric conversion layer 74 is not limited to the above-mentioned method, and other methods such as vapor phase growth may also be used.

[0233] Finally, as shown in FIG. 19L, the second electrode 75 is formed by a conventionally known method so as to cover the surface of the photoelectric conversion layer 74, thereby completing the manufacturing process of the pixel array section 10 according to the embodiment.

[0234] 20 is a plan view schematically illustrating an example of the arrangement of the injection port H according to the embodiment of the present disclosure. As shown in FIG. 20, in the above-described manufacturing process, the injection port H for injecting liquid raw materials such as the photoelectric conversion layer 34 may be provided for each unit pixel 11.

[0235] 21 is a plan view schematically illustrating an example of the arrangement of the injection ports H according to the embodiment of the present disclosure. As shown in Fig. 21, the injection ports H for injecting liquid raw materials such as the photoelectric conversion layer 34 may be provided for each of a plurality of unit pixels 11 (four in the example of Fig. 21).

[0236] 22 is a plan view schematically illustrating an example of the arrangement of the injection port H according to the embodiment of the present disclosure. As shown in Fig. 22, the injection port H for injecting a liquid raw material such as the photoelectric conversion layer 34 may be provided outside a pixel group made up of a plurality of unit pixels 11 arranged in a matrix so as to surround the pixel group.

[0237] <Manufacturing process procedure> Next, a procedure for manufacturing the pixel array unit 10 according to the embodiment will be described with reference to Fig. 23. Fig. 23 is a flowchart showing the procedure for manufacturing the pixel array unit 10 according to the embodiment.

[0238] First, a first electrode 31 is formed on the surface of the semiconductor layer 50 on which the photodiode 60, various pixel transistors, various wirings, floating diffusions 51 to 53, etc. are already formed (step S101). The first electrode 31 is electrically connected to the floating diffusion 52, and is surrounded by an insulating layer 40.

[0239] Next, the removal material R is formed above the first electrode 31 (step S102). For example, the removal material R is formed on the surface of the charge storage layer 33 formed so as to be in contact with the surface of the first electrode 31. Note that the removal material R may also be formed directly on the surface of the first electrode 31.

[0240] Next, a second electrode 35 is formed on the surface of the removed material R (step S103). The step of forming the second electrode 35 is preferably performed so as not to cover a portion of the removed material R. In other words, the removed material R is preferably provided so that a portion of the second electrode 35 is excluded in plan view.

[0241] Next, the removal material R is removed by a predetermined process (for example, chemical etching) (step S104), thereby forming a gap V1 on the bottom surface side of the second electrode .

[0242] Next, with the voids V1 formed, annealing is performed at a predetermined temperature (step S105). Note that the annealing step may be performed at a desired temperature higher than the heat-resistant temperature of the photoelectric conversion layer 34 formed later in step S106.

[0243] This makes it possible to form elements with good characteristics in the pixel array section 10, and also to prevent damage to the photoelectric conversion layer 34.

[0244] Finally, the photoelectric conversion layer 34 is formed in the region (gap V1) from which the removed material R has been removed (step S106), thereby completing the process. The step of forming the photoelectric conversion layer 34 may be performed by injecting a liquid raw material for the photoelectric conversion layer 34 into the gap V1 from an injection port H formed so as to exclude the second electrode 35.

[0245] This allows the photoelectric conversion layer 34 to be formed after a certain amount of semiconductor processing has been completed.

[0246] [effect] The solid-state imaging device 1 according to the embodiment includes a photoelectric conversion unit 30 having a first electrode 31, a photoelectric conversion layer 34 electrically connected to the first electrode 31, and a second electrode 35 provided on the light incident surface of the photoelectric conversion layer 34. The photoelectric conversion layer 34 also has a protruding region 34a that protrudes from the second electrode 35 in a plan view.

[0247] This makes it possible to realize a solid-state imaging device 1 in which a good photoelectric conversion layer 34 is formed.

[0248] In addition, in the solid-state imaging device 1 according to the embodiment, the photoelectric conversion section 30 further includes a charge storage layer 33 provided on the surface of the photoelectric conversion layer 34 opposite the light incident side, and a charge storage electrode 32 arranged opposite the charge storage layer 33 via an insulating layer 40.

[0249] This makes it possible to reduce reset noise caused by the reset transistor 62R during the reset operation, thereby making it possible to obtain a high-quality image.

[0250] Moreover, the solid-state imaging device 1 according to the embodiment is provided with a plurality of photoelectric conversion sections 30. Furthermore, the plurality of photoelectric conversion sections 30 share one floating diffusion 52.

[0251] This eliminates the need to provide individual floating diffusions 52 for all photoelectric conversion units 30, thereby simplifying the circuit configuration within the pixel array unit 10.

[0252] In the solid-state imaging device 1 according to the embodiment, the protruding region 34a of the photoelectric conversion layer 34 has a surface on the light incident side that is substantially flush with the portion of the photoelectric conversion layer 34 that contacts the second electrode 35.

[0253] This allows the photoelectric conversion layer 34 to be formed after a certain amount of semiconductor processing has been completed.

[0254] In the solid-state imaging device 1 according to the embodiment, the protruding region 34a of the photoelectric conversion layer 34 has a surface on the light incident side that protrudes beyond the portion of the photoelectric conversion layer 34 that contacts the second electrode 35.

[0255] This allows the photoelectric conversion layer 34 to be formed after a certain amount of semiconductor processing has been completed.

[0256] In the solid-state imaging device 1 according to the embodiment, the photoelectric conversion layer 34 of the photoelectric conversion section 30 is made of an organic semiconductor material.

[0257] This makes it possible to suppress attenuation of the light L in the photoelectric conversion section 30, thereby making it possible to acquire a high-quality image.

[0258] The solid-state imaging device 1 according to the embodiment further includes another photoelectric conversion section 20 that is provided on the light incident side of the photoelectric conversion section 30 and performs photoelectric conversion on light of a different wavelength from that of the photoelectric conversion section 30.

[0259] This makes it possible to prevent the incident light L from being attenuated by the color filter, thereby making it possible to obtain a high-quality image.

[0260] In the solid-state imaging device 1 according to the embodiment, the photoelectric conversion layer 24 of the other photoelectric conversion section 20 is made of an organic semiconductor material.

[0261] This makes it possible to suppress attenuation of light L in the photoelectric conversion section 20, thereby making it possible to acquire a high-quality image.

[0262] Furthermore, the manufacturing method of the solid-state imaging device 1 according to the embodiment includes the steps of forming a first electrode 31, forming a removed material R, forming a second electrode 35, removing the removed material E, and forming a photoelectric conversion layer 34. In the step of forming the removed material R, the removed material R is formed above the first electrode 31. In the step of forming the second electrode 35, the second electrode 35 is formed on the surface of the removed material R. In the step of forming the photoelectric conversion layer 34, the photoelectric conversion layer 34 is formed in the region where the removed material R has been removed.

[0263] This makes it possible to realize a solid-state imaging device 1 in which a good photoelectric conversion layer 34 is formed.

[0264] Furthermore, the method for manufacturing the solid-state imaging device 1 according to the embodiment includes a step of annealing at a predetermined temperature before the step of forming the photoelectric conversion layer .

[0265] This makes it possible to form elements with good characteristics in the pixel array section 10.

[0266] In the method for manufacturing the solid-state imaging device 1 according to the embodiment, the annealing step is performed at a temperature higher than the heat-resistant temperature of the photoelectric conversion layer .

[0267] This makes it possible to form elements with good characteristics in the pixel array section 10, and also to prevent damage to the photoelectric conversion layer 34.

[0268] Furthermore, in the manufacturing method of the solid-state imaging device 1 according to the embodiment, the process of forming the photoelectric conversion layer 34 is carried out by injecting a liquid raw material into the area from which the removal material R has been removed through an injection port H formed so as to exclude the second electrode 35.

[0269] This allows the photoelectric conversion layer 34 to be formed after a certain amount of semiconductor processing has been completed.

[0270] [Electronic equipment] Note that the present disclosure is not limited to application to solid-state imaging devices, and can be applied to all electronic devices that have solid-state imaging devices, such as camera modules, imaging devices, portable terminal devices with imaging functions, and copiers that use solid-state imaging devices in their image reading units.

[0271] Examples of such imaging devices include digital still cameras and video cameras, while examples of mobile terminal devices with imaging capabilities include smartphones and tablet terminals.

[0272] Fig. 24 is a block diagram showing a configuration example of an imaging device serving as electronic device 100 to which the technology according to the present disclosure is applied. Electronic device 100 in Fig. 24 is, for example, an imaging device such as a digital still camera or a video camera, or a mobile terminal device such as a smartphone or a tablet terminal.

[0273] In FIG. 24, electronic device 100 comprises a lens group 101, a solid-state imaging device 102, a DSP circuit 103, a frame memory 104, a display unit 105, a recording unit 106, an operation unit 107, and a power supply unit 108.

[0274] In the electronic device 100 , the DSP circuit 103 , the frame memory 104 , the display unit 105 , the recording unit 106 , the operation unit 107 , and the power supply unit 108 are interconnected via a bus line 109 .

[0275] The lens group 101 captures incident light (image light) from a subject and forms an image on the imaging surface of the solid-state imaging device 102. The solid-state imaging device 102 corresponds to the solid-state imaging device 1 according to the above-described embodiment, and converts the amount of incident light formed on the imaging surface by the lens group 101 into an electrical signal on a pixel-by-pixel basis and outputs the signal as a pixel signal.

[0276] The DSP circuit 103 is a camera signal processing circuit that processes signals supplied from the solid-state imaging device 102. The frame memory 104 temporarily stores image data processed by the DSP circuit 103 on a frame-by-frame basis.

[0277] The display unit 105 is formed of a panel display device such as a liquid crystal panel or an organic EL (Electro Luminescence) panel, and displays moving images or still images captured by the solid-state imaging device 102. The recording unit 106 records image data of the moving images or still images captured by the solid-state imaging device 102 in a recording medium such as a semiconductor memory or a hard disk.

[0278] In response to user operations, the operation unit 107 issues operation commands for various functions of the electronic device 100. The power supply unit 108 appropriately supplies various types of power to the DSP circuit 103, frame memory 104, display unit 105, recording unit 106, and operation unit 107 as operating power sources to these power supply targets.

[0279] In the electronic device 100 configured as above, by applying the solid-state imaging device 1 according to each of the above-described embodiments as the solid-state imaging device 102, it is possible to suppress the occurrence of color mixture.

[0280] [Application to mobile devices] The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot.

[0281] FIG. 25 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology according to the present disclosure can be applied.

[0282] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 25, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (Interface) 12053.

[0283] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, a braking device for generating a braking force of the vehicle, etc.

[0284] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches may be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0285] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture images outside the vehicle and receives the captured images. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, characters on the road surface, etc., based on the received images.

[0286] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of light received. The imaging unit 12031 can output the electrical signal as an image, or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0287] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0288] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drivetrain control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including avoiding or mitigating collisions between vehicles, following based on the distance between vehicles, maintaining vehicle speed, warning of vehicle collisions, or warning of vehicle lane departure.

[0289] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0290] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information about the outside of the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control for the purpose of preventing glare, such as switching from high beams to low beams.

[0291] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying information to passengers in the vehicle or to the outside of the vehicle. In the example of Fig. 25, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as output devices. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0292] FIG. 26 is a diagram showing an example of the installation position of the imaging unit 12031.

[0293] In FIG. 26, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0294] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided at the front nose and the imaging unit 12105 provided at the top of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided at the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided at the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 provided at the top of the windshield inside the vehicle cabin is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

[0295] 26 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, by overlaying the image data captured by the imaging units 12101 to 12104, a bird's-eye view image of the vehicle 12100 viewed from above can be obtained.

[0296] At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera made up of multiple imaging elements, or may be an imaging element having pixels for phase difference detection.

[0297] For example, the microcomputer 12051 can calculate the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104, thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (for example, 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of automatic driving, which runs autonomously without relying on driver operation.

[0298] For example, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the degree of risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drivetrain control unit 12010.

[0299] At least one of the image capturing units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the images captured by the image capturing units 12101 to 12104. The pedestrian recognition is performed, for example, by extracting feature points from the images captured by the image capturing units 12101 to 12104, which are infrared cameras, and then performing pattern matching on a series of feature points that indicate the outline of an object to determine whether or not the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the image capturing units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular outline on the recognized pedestrian for emphasis. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating the pedestrian at a desired position.

[0300] An example of a vehicle control system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to the imaging unit 12031 of the above-described configuration. Specifically, the solid-state imaging device 1 of FIG. 1 can be applied to the imaging unit 12031. By applying the technology according to the present disclosure to the imaging unit 12031, high-quality images can be acquired from the imaging unit 12031.

[0301] [Application example to endoscopic surgery system] The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be applied to an endoscopic surgery system.

[0302] FIG. 27 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technology according to the present disclosure (the present technology) can be applied.

[0303] 27 shows an operator (doctor) 11131 performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgery system 11000. As shown in the figure, the endoscopic surgery system 11000 is composed of an endoscope 11100, other surgical instruments 11110 such as an insufflation tube 11111 and an energy treatment instrument 11112, a support arm device 11120 that supports the endoscope 11100, and a cart 11200 on which various devices for endoscopic surgery are mounted.

[0304] The endoscope 11100 is composed of a lens barrel 11101, a region of a predetermined length from the tip of which is inserted into a body cavity of a patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101. In the example shown, the endoscope 11100 is configured as a so-called rigid scope having a rigid lens barrel 11101, but the endoscope 11100 may also be configured as a so-called flexible scope having a flexible lens barrel.

[0305] An opening into which an objective lens is fitted is provided at the tip of the lens barrel 11101. A light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101, and is irradiated via the objective lens towards an object to be observed inside the body cavity of the patient 11132. The endoscope 11100 may be a direct-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0306] An optical system and an image sensor are provided inside the camera head 11102, and light reflected from the object of observation (observation light) is collected by the optical system onto the image sensor. The observation light is photoelectrically converted by the image sensor to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observed image. The image signal is sent to a camera control unit (CCU) 11201 as RAW data.

[0307] The CCU 11201 is configured with a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and comprehensively controls the operations of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102, and performs various image processing on the image signal, such as development processing (demosaic processing), to display an image based on the image signal.

[0308] Under the control of the CCU 11201, the display device 11202 displays an image based on an image signal that has been subjected to image processing by the CCU 11201.

[0309] The light source device 11203 is configured from a light source such as an LED (light emitting diode), and supplies irradiation light to the endoscope 11100 when photographing an operation site or the like.

[0310] The input device 11204 is an input interface for the endoscopic surgery system 11000. A user can input various information and instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction to change the imaging conditions (type of irradiating light, magnification, focal length, etc.) of the endoscope 11100.

[0311] The treatment tool control device 11205 controls the driving of the energy treatment tool 11112 for cauterizing tissue, incising, sealing blood vessels, etc. The insufflation device 11206 inflates the body cavity of the patient 11132 through the insufflation tube 11111 in order to ensure a clear field of view for the endoscope 11100 and a working space for the surgeon. The recorder 11207 is a device capable of recording various types of information related to the surgery. The printer 11208 is a device capable of printing various types of information related to the surgery in various formats such as text, images, or graphs.

[0312] The light source device 11203 that supplies illumination light to the endoscope 11100 when photographing the surgical site can be configured from a white light source configured from, for example, an LED, a laser light source, or a combination of these. When the white light source is configured from a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, making it possible to adjust the white balance of the captured image in the light source device 11203. In this case, it is also possible to capture images corresponding to each RGB in a time-division manner by irradiating the object of observation with laser light from each RGB laser light source in a time-division manner and controlling the drive of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, a color image can be obtained without providing a color filter to the image sensor.

[0313] Furthermore, the light source device 11203 may be controlled to change the intensity of light it outputs at predetermined time intervals. By controlling the driving of the image sensor of the camera head 11102 in synchronization with the timing of the change in light intensity to acquire images in a time-division manner and combining the images, it is possible to generate an image with a high dynamic range that is free of so-called blocked-up shadows and blown-out highlights.

[0314] The light source device 11203 may also be configured to supply light in a predetermined wavelength band corresponding to special light observation. Special light observation, for example, utilizes the wavelength dependence of light absorption in body tissues to irradiate light with a narrower band than the light irradiated during normal observation (i.e., white light), thereby capturing high-contrast images of specific tissues, such as blood vessels on the surface of mucous membranes, known as narrow-band imaging. Alternatively, special light observation may be performed using fluorescence observation, in which images are obtained using fluorescence generated by irradiating excitation light. Fluorescence observation can involve irradiating excitation light onto body tissues and observing the fluorescence from the tissues (autofluorescence observation), or locally injecting a reagent such as indocyanine green (ICG) into the body tissue and irradiating the tissue with excitation light corresponding to the fluorescent wavelength of the reagent to obtain a fluorescent image. The light source device 11203 may be configured to supply narrow-band light and / or excitation light corresponding to such special light observation.

[0315] FIG. 28 is a block diagram showing an example of the functional configuration of the camera head 11102 and the CCU 11201 shown in FIG.

[0316] The camera head 11102 has a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other by a transmission cable 11400 so that they can communicate with each other.

[0317] The lens unit 11401 is an optical system provided at the connection point with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401. The lens unit 11401 is composed of a combination of multiple lenses including a zoom lens and a focus lens.

[0318] The imaging unit 11402 may include one imaging element (a so-called single-chip type) or multiple imaging elements (a so-called multi-chip type). When the imaging unit 11402 is configured as a multi-chip type, for example, each imaging element may generate an image signal corresponding to each of RGB, and a color image may be obtained by combining these signals. Alternatively, the imaging unit 11402 may be configured to have a pair of imaging elements for acquiring image signals for the right eye and the left eye corresponding to 3D (dimensional) display. 3D display allows the surgeon 11131 to more accurately grasp the depth of the biological tissue at the surgical site. Note that when the imaging unit 11402 is configured as a multi-chip type, multiple lens units 11401 may be provided corresponding to each imaging element.

[0319] Furthermore, the imaging unit 11402 does not necessarily have to be provided in the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101, immediately after the objective lens.

[0320] The driving unit 11403 is configured by an actuator, and moves the zoom lens and focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera head control unit 11405. This allows the magnification and focus of the image captured by the imaging unit 11402 to be adjusted appropriately.

[0321] The communication unit 11404 is configured by a communication device for transmitting and receiving various types of information to and from the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 to the CCU 11201 via the transmission cable 11400 as RAW data.

[0322] Furthermore, the communication unit 11404 receives a control signal for controlling the driving of the camera head 11102 from the CCU 11201 and supplies the control signal to the camera head control unit 11405. The control signal includes information on the imaging conditions, such as information specifying the frame rate of the captured image, information specifying the exposure value at the time of imaging, and / or information specifying the magnification and focus of the captured image.

[0323] The image capturing conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by the user, or may be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. In the latter case, the endoscope 11100 is equipped with so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.

[0324] The camera head control unit 11405 controls the driving of the camera head 11102 based on a control signal received from the CCU 11201 via the communication unit 11404 .

[0325] The communication unit 11411 is configured by a communication device for transmitting and receiving various information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.

[0326] Furthermore, the communication unit 11411 transmits to the camera head 11102 a control signal for controlling the driving of the camera head 11102. The image signal and the control signal can be transmitted by electrical communication, optical communication, or the like.

[0327] The image processing unit 11412 performs various image processing operations on the image signal, which is RAW data sent from the camera head 11102 .

[0328] The control unit 11413 performs various controls related to the imaging of the surgical site, etc. by the endoscope 11100 and the display of the captured image obtained by imaging the surgical site, etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102.

[0329] Furthermore, the control unit 11413 causes the display device 11202 to display a captured image showing the surgical site, etc., based on the image signal that has been image processed by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition technologies. For example, the control unit 11413 can recognize surgical tools such as forceps, specific biological parts, bleeding, mist generated when using the energy treatment tool 11112, etc., by detecting the shape and color of the edges of objects included in the captured image. When displaying the captured image on the display device 11202, the control unit 11413 may use the recognition results to superimpose various surgical support information on the image of the surgical site. By superimposing the surgical support information and presenting it to the surgeon 11131, the burden on the surgeon 11131 can be reduced and the surgeon 11131 can proceed with the surgery reliably.

[0330] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable for communication of electrical signals, an optical fiber for optical communication, or a composite cable of these.

[0331] In the illustrated example, communication is performed by wire using the transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may also be performed wirelessly.

[0332] The foregoing has described an example of an endoscopic surgery system to which the technology according to the present disclosure can be applied. The technology according to the present disclosure can be applied to the imaging unit 11402 of the camera head 11102 in the configuration described above. Specifically, the solid-state imaging device 1 in FIG. 1 can be applied to the imaging unit 11402. By applying the technology according to the present disclosure to the imaging unit 11402, high-quality images of the surgical site can be obtained from the imaging unit 11402, allowing the surgeon to reliably confirm the surgical site.

[0333] Although an endoscopic surgery system has been described as an example here, the technology disclosed herein may also be applied to other systems, such as a microsurgery system.

[0334] Although the embodiments of the present disclosure have been described above, the technical scope of the present disclosure is not limited to the above-described embodiments, and various modifications are possible within the scope of the gist of the present disclosure. Furthermore, components of different embodiments and modifications may be combined as appropriate.

[0335] Furthermore, the effects described in this specification are merely examples and are not limiting, and other effects may also be present.

[0336] The present technology can also be configured as follows. (1) a photoelectric conversion unit including a first electrode, a photoelectric conversion layer electrically connected to the first electrode, and a second electrode provided on a light incident surface of the photoelectric conversion layer; Equipped with The photoelectric conversion layer has a protruding region that protrudes from the second electrode in a plan view. Solid-state imaging device. (2) The photoelectric conversion unit further includes a charge storage layer provided on a surface of the photoelectric conversion layer opposite to the light incident side, and a charge storage electrode disposed opposite to the charge storage layer via an insulating layer. The solid-state imaging device according to (1) above. (3) a plurality of the photoelectric conversion units are provided, The plurality of photoelectric conversion units share one floating diffusion. The solid-state imaging device according to (2) above. (4) The protruding region of the photoelectric conversion layer is substantially flush with the portion of the photoelectric conversion layer that contacts the second electrode on the light incident side. The solid-state imaging device according to any one of (1) to (3) above. (5) The protruding region of the photoelectric conversion layer has a surface on the light incident side protruding beyond a portion of the photoelectric conversion layer that contacts the second electrode. The solid-state imaging device according to any one of (1) to (3) above. (6) The photoelectric conversion layer of the photoelectric conversion unit is made of an organic semiconductor material. The solid-state imaging device according to any one of (1) to (5) above. (7) and a second photoelectric conversion unit that is provided on the light incident side of the photoelectric conversion unit and performs photoelectric conversion on light of a wavelength different from that of the photoelectric conversion unit. The solid-state imaging device according to any one of (1) to (6). (8) The photoelectric conversion layer of the other photoelectric conversion unit is made of an organic semiconductor material. The solid-state imaging device according to (7) above. (9) forming a first electrode; forming a removal material above the first electrode; forming a second electrode on the surface of the removed material; removing the removed material; forming a photoelectric conversion layer in the area from which the removed material has been removed; Contains A method for manufacturing a solid-state imaging device. (10) The method includes a step of annealing at a predetermined temperature before the step of forming the photoelectric conversion layer. A method for manufacturing the solid-state imaging device according to (9) above. (11) The annealing step is performed at a temperature higher than the heat-resistant temperature of the photoelectric conversion layer. A method for manufacturing a solid-state imaging device according to (10) above. (12) The step of forming the photoelectric conversion layer is performed by injecting a liquid raw material into the region from which the removal material has been removed through an injection port formed so as to exclude the second electrode. The method for manufacturing a solid-state imaging device according to any one of (9) to (11) above. (13) a photoelectric conversion unit including a first electrode, a photoelectric conversion layer electrically connected to the first electrode, and a second electrode provided on a light incident surface of the photoelectric conversion layer; Equipped with The photoelectric conversion layer includes a solid-state imaging device having a protruding region that protrudes from the second electrode in a plan view. electronic equipment. (14) The photoelectric conversion unit further includes a charge storage layer provided on a surface of the photoelectric conversion layer opposite to the light incident side, and a charge storage electrode disposed opposite to the charge storage layer via an insulating layer. The electronic device according to (13) above. (15) The photoelectric conversion unit is provided in plurality, The plurality of photoelectric conversion units share one floating diffusion. The electronic device according to (14) above. (16) The protruding region of the photoelectric conversion layer is substantially flush with the portion of the photoelectric conversion layer that contacts the second electrode on the light incident side. The electronic device according to any one of (13) to (15) above. (17) The protruding region of the photoelectric conversion layer has a surface on the light incident side protruding beyond a portion of the photoelectric conversion layer that contacts the second electrode. The electronic device according to any one of (13) to (15) above. (18) The photoelectric conversion layer of the photoelectric conversion unit is made of an organic semiconductor material. The electronic device according to any one of (13) to (17) above. (19) and a second photoelectric conversion unit that is provided on the light incident side of the photoelectric conversion unit and performs photoelectric conversion on light of a wavelength different from that of the photoelectric conversion unit. The electronic device according to any one of (13) to (18). (20) The photoelectric conversion layer of the other photoelectric conversion unit is made of an organic semiconductor material. The electronic device according to (19) above. [Explanation of symbols]

[0337] 1. Solid-state imaging device 10 Pixel array section 11 unit pixel 20, 30 Photoelectric conversion unit 21, 31 1st electrode 22, 32 Electrode for charge storage 23, 33 Charge storage layer 24, 34 Photoelectric conversion layer 24a, 34a protruding area 25, 35 2nd electrode 40 insulating layer 50 Semiconductor layer 51, 52 Floating Diffusion 100 Electronic equipment R removal material

Claims

1. a photoelectric conversion section including a first electrode, a photoelectric conversion layer electrically connected to the first electrode, and a second electrode provided on a light incident surface of the photoelectric conversion layer; Equipped with the photoelectric conversion layer has a protruding region that protrudes from the second electrode in a plan view, The protruding region of the photoelectric conversion layer has a surface on the light incident side protruding beyond a portion of the photoelectric conversion layer that contacts the second electrode. Solid-state imaging device.

2. and a second photoelectric conversion unit that is provided on the light incident side of the photoelectric conversion unit and performs photoelectric conversion on light of a wavelength different from that of the photoelectric conversion unit. The solid-state imaging device according to claim 1 .

3. The photoelectric conversion layer of the other photoelectric conversion unit is made of an organic semiconductor material. The solid-state imaging device according to claim 2 .

4. The photoelectric conversion unit further includes a charge storage layer provided on a surface of the photoelectric conversion layer opposite to the light incident side, and a charge storage electrode disposed opposite to the charge storage layer via an insulating layer.

4. The solid-state imaging device according to claim 1.

5. The photoelectric conversion layer of the photoelectric conversion unit is made of an organic semiconductor material.

5. The solid-state imaging device according to claim 1.

6. forming a first electrode; forming a removal material above the first electrode; forming a second electrode on the surface of the removed material; removing the removed material; forming a photoelectric conversion layer in the area from which the removed material has been removed; Contains A method for manufacturing a solid-state imaging device.

7. The method includes a step of annealing at a predetermined temperature before the step of forming the photoelectric conversion layer. The method for manufacturing a solid-state imaging device according to claim 6 .

8. The annealing step is performed at a temperature higher than the heat-resistant temperature of the photoelectric conversion layer. The method for manufacturing a solid-state imaging device according to claim 7 .

9. The step of forming the photoelectric conversion layer is performed by injecting a liquid raw material into the region from which the removal material has been removed through an injection port formed so as to exclude the second electrode. The method for manufacturing a solid-state imaging device according to claim 6 .

10. a photoelectric conversion section including a first electrode, a photoelectric conversion layer electrically connected to the first electrode, and a second electrode provided on a light incident surface of the photoelectric conversion layer; Equipped with the photoelectric conversion layer has a protruding region that protrudes from the second electrode in a plan view, the protruding region of the photoelectric conversion layer has a surface on the light incident side protruding beyond a portion of the photoelectric conversion layer that contacts the second electrode; electronic equipment.

Images