Micro semiconductor chip wet alignment method and display transfer structure

Abstract

To provide a micro semiconductor chip wet alignment method and a display transfer structure.SOLUTION: A micro semiconductor chip wet alignment method and the micro semiconductor chip wet alignment method related to the display transfer structure include a step for supplying liquid to a transfer substrate containing multiple grooves, a step for supplying micro-semiconductor chips to the transfer substrate, and a step for scanning the transfer substrate with an absorbent material capable of absorbing the liquid, thereby micro semiconductor chips can be transferred over a large area.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a micro semiconductor chip wet alignment method and a display transfer structure. [Background technology]

[0002] Light-emitting diodes (LEDs) are seeing increasing industrial demand due to their advantages of low power consumption and environmental friendliness, and are being applied not only to lighting devices and LCD (liquid crystal display) backlights but also to display devices. When manufacturing display devices using micro LED chips, a pick and place method is used to transfer micro LEDs. However, this method's productivity decreases as the size of micro LEDs decreases and the size of displays increases. Summary of the Invention [Problem to be solved by the invention]

[0003] The problem to be solved by the present invention is to provide a method for aligning micro semiconductor chips by a wet method.

[0004] Another problem to be solved by the present invention is to provide a display transfer structure in which micro semiconductor chips are aligned. [Means for solving the problem]

[0005] A micro semiconductor chip wet alignment method according to an exemplary embodiment includes the steps of preparing a transfer substrate having a plurality of grooves, supplying a liquid to the grooves of the transfer substrate, supplying a micro semiconductor chip to the transfer substrate, and scanning the transfer substrate with an absorbent material capable of absorbing the liquid to align the micro semiconductor chip to the groove.

[0006] The step of supplying the liquid may include spraying, dispensing, inkjet dotting, and / or flowing the liquid onto the transfer substrate.

[0007] The step of supplying the liquid and the step of supplying the micro semiconductor chip may occur simultaneously.

[0008] The step of supplying the liquid and the step of supplying the plurality of micro semiconductor chips may occur in a single process, and the step of supplying the liquid and the step of supplying the micro semiconductor chips may include the step of supplying a suspension containing the liquid and the micro semiconductor chips onto the transfer substrate.

[0009] The step of supplying the suspension to the transfer substrate may include a spraying method, a dispensing method, an inkjet dotting method, and / or a method of flowing the suspension onto the transfer substrate.

[0010] The steps of supplying the liquid, supplying the microsemiconductor chips, and scanning may also be performed by immersing the absorbent material in a suspension containing the liquid and the microsemiconductor chips, and scanning the transfer substrate with the absorbent material.

[0011] The step of providing the micro semiconductor chip may include the steps of attaching the micro semiconductor chip to the absorbent material, and contacting the transfer substrate with the absorbent material to which the micro semiconductor chip is attached.

[0012] The step of supplying the micro semiconductor chips may include the steps of preparing a suspension by adding the plurality of micro semiconductor chips to another liquid, and providing the suspension to the transfer substrate.

[0013] The steps of supplying the liquid, supplying the micro semiconductor chip, and / or scanning may be repeated multiple times.

[0014] Scanning the transfer substrate may include contacting the absorbent material with the transfer substrate and passing through the grooves.

[0015] The step of scanning the transfer substrate may include reciprocating, translating, rotating, rolling, rubbing, and / or spinning the absorber, or may include reciprocating, rotating, translating, rolling, rubbing, and / or spinning the transfer substrate.

[0016] The liquid may include one or a combination of the following group: water, ethanol, alcohol, polyol, ketone, halocarbon, acetone, flux, and organic solvent.

[0017] The absorbent material may include fabric, tissue paper, polyester fiber, paper or wipes.

[0018] The microsemiconductor chip may include an electrode on one surface, and the electrode of the microsemiconductor chip that has entered the groove through the scanning step may be positioned to face the upper opening.

[0019] The electrodes may comprise Al, Au, Pt, Mo, Cu, Ag and / or Zn. The transfer substrate may include a substrate and a metal layer disposed on an upper surface of the substrate. The metal layer may include Ag, Au, Pt, Ni, Cr and / or Al.

[0020] A display transfer structure according to an exemplary embodiment includes a transfer substrate including a plurality of grooves and a microsemiconductor chip provided in the grooves, and the microsemiconductor chip may include an electrode on a surface facing an upper opening of the plurality of grooves.

[0021] The transfer substrate may include a substrate and a metal layer disposed on an upper surface of the substrate. The metal layer may include Ag, Au, Pt, Ni, Cr and / or Al. The micro semiconductor chips are randomly aligned in the grooves.

[0022] The micro semiconductor chip may have a horizontal electrode structure. The transfer substrate includes a substrate and a transfer mold provided on the substrate, and the groove is also provided in the transfer mold.

[0023] The transfer substrate may include regions corresponding to sub-pixels, and each of the regions may include a plurality of grooves.

[0024] Each of the grooves may have a size capable of accommodating a plurality of the micro semiconductor chips.

[0025] A color conversion layer may be further provided on the microsemiconductor chip to convert the color of light emitted from the microsemiconductor chip. [Effects of the Invention]

[0026] The alignment method according to the embodiment of the present invention can efficiently align micro semiconductor chips over a large area using a wet method. The display transfer structure according to the embodiment of the present invention can align micro semiconductor chips over a large area and can be easily adopted in large display devices. [Brief explanation of the drawings]

[0027] [Figure 1] 1 is a diagram illustrating a micro semiconductor chip wet alignment method according to an exemplary embodiment; [Figure 2] 1 is a diagram illustrating a transfer substrate and an absorbent material used in a micro semiconductor chip wet alignment method according to an exemplary embodiment; [Figure 3] 1 is a diagram illustrating a scanning process of a micro semiconductor chip wet alignment method according to an exemplary embodiment; [Figure 4]4 is a diagram illustrating a process of aligning a micro semiconductor chip using a micro semiconductor chip wet alignment method according to an exemplary embodiment; [Figure 5] 1 is a diagram illustrating a micro semiconductor chip wet alignment method according to an exemplary embodiment; [Figure 6] 1 is a diagram illustrating a transfer substrate and an absorbent material used in a micro semiconductor chip wet alignment method according to an exemplary embodiment; [Figure 7] 1 is a diagram illustrating an example of a transfer substrate of a display transfer structure according to an exemplary embodiment. [Figure 8] 10 is a diagram illustrating another example of a transfer substrate of a display transfer structure according to an exemplary embodiment; [Figure 9] 10 is a diagram illustrating yet another example of a transfer substrate of a display transfer structure according to an exemplary embodiment; [Figure 10] 10 is a diagram illustrating yet another example of a transfer substrate of a display transfer structure according to an exemplary embodiment; [Figure 11] 10 is a diagram illustrating yet another example of a transfer substrate of a display transfer structure according to an exemplary embodiment; [Figure 12] 1 is a diagram illustrating a micro semiconductor chip wet alignment method according to an exemplary embodiment; [Figure 13] 1 is a diagram illustrating a micro semiconductor chip wet alignment method according to an exemplary embodiment; [Figure 14] 1 is a diagram illustrating a suspension and a transfer substrate used in a micro semiconductor chip wet alignment method according to an exemplary embodiment; [Figure 15] 1 is a diagram illustrating a micro semiconductor chip wet alignment method according to an exemplary embodiment; [Figure 16] 1 is a diagram illustrating a suspension and an absorbent material used in a micro semiconductor chip wet alignment method according to an exemplary embodiment; [Figure 17] 1 is a diagram illustrating a micro semiconductor chip wet alignment method according to an exemplary embodiment; [Figure 18]1 is a diagram illustrating an example of a state in which a micro semiconductor chip is attached to an absorbent material used in a micro semiconductor chip wet alignment method according to an exemplary embodiment; [Figure 19] 1 is a schematic diagram illustrating a micro semiconductor chip wet alignment apparatus according to an exemplary embodiment. [Figure 20] 1 is a diagram illustrating an example of an absorbent material of a micro semiconductor chip wet alignment apparatus according to an exemplary embodiment; [Figure 21] 10 is a diagram illustrating a schematic view of a micro semiconductor chip wet alignment apparatus according to another exemplary embodiment; [Figure 22] 1 is a diagram schematically illustrating a micro semiconductor chip having a horizontal electrode structure; [Figure 23] 1 is a diagram illustrating a process of aligning a micro semiconductor chip having a horizontal electrode structure; [Figure 24] 1 is a diagram illustrating a process of aligning a micro semiconductor chip having a horizontal electrode structure; [Figure 25] 1 is a diagram schematically illustrating a micro semiconductor chip having a vertical electrode structure. [Figure 26] 1 is a view illustrating a process of aligning a micro semiconductor chip having a vertical electrode structure; [Figure 27] 1 is a view illustrating a process of aligning a micro semiconductor chip having a vertical electrode structure; [Figure 28] 1 is a diagram illustrating a top view of a display transfer structure according to an example embodiment. [Figure 29] 10 is a diagram illustrating a cross-sectional view of a display transfer structure according to another exemplary embodiment. [Figure 30] 10 is a diagram illustrating a cross-sectional view of a display transfer structure according to another exemplary embodiment. [Figure 31] 10 is a cross-sectional view of a display transfer structure according to yet another exemplary embodiment; [Figure 32] 31 is a diagram illustrating an example in which a color conversion layer is further provided in the display transfer structure illustrated in FIG. 30. [Figure 33] 10 is a cross-sectional view of a display transfer structure according to yet another exemplary embodiment; [Figure 34] 10 is a diagram illustrating a cross-sectional view of a display transfer structure according to another exemplary embodiment. [Figure 35] 10 is a diagram illustrating a cross-sectional view of a display transfer structure according to another exemplary embodiment. [Figure 36] 10 is a diagram illustrating a cross-sectional view of a display transfer structure according to another exemplary embodiment. [Figure 37] 1 is a diagram illustrating an alignment structure of a micro semiconductor chip in a display transfer structure according to an exemplary embodiment; [Figure 38] 1 is a diagram illustrating an alignment structure of a micro semiconductor chip in a display transfer structure according to an exemplary embodiment; [Figure 39] 1 is a diagram illustrating an alignment structure of a micro semiconductor chip in a display transfer structure according to an exemplary embodiment; [Figure 40] 1 is a diagram illustrating an alignment structure of a micro semiconductor chip in a display transfer structure according to an exemplary embodiment; [Figure 41] 1 is a diagram illustrating an alignment structure of a micro semiconductor chip in a display transfer structure according to an exemplary embodiment; [Figure 42] 1 is a diagram illustrating a schematic block diagram of an electronic device in accordance with an exemplary embodiment. [Figure 43] 1 is a diagram illustrating an example in which a display device according to an exemplary embodiment is applied to a mobile device; [Figure 44] 1 is a diagram illustrating an example in which a display device according to an exemplary embodiment is applied to a vehicle display device; [Figure 45] 1 is a diagram illustrating an example in which a display device according to an exemplary embodiment is applied to augmented reality glasses; [Figure 46] 1 is a diagram illustrating an example in which a display apparatus according to an exemplary embodiment is applied to signage; [Figure 47] 1 is a diagram illustrating an example in which a display device according to an exemplary embodiment is applied to a wearable display; DETAILED DESCRIPTION OF THE INVENTION

[0028] Hereinafter, a micro semiconductor chip wet alignment method and a display transfer structure according to various embodiments will be described in detail with reference to the accompanying drawings. In the following drawings, the same reference numerals refer to the same components, and the size of each component may be exaggerated in the drawings for clarity and convenience. Terms such as "first" and "second" are used only to distinguish one component from another, and should not be construed in a limiting manner.

[0029] The singular expression includes the plural expression unless the context clearly dictates otherwise. Furthermore, when a part "comprises" a certain element, it does not mean that it excludes other elements, but that it may further include other elements, unless otherwise specified. In the drawings, the size and thickness of each element may be exaggerated for clarity. Furthermore, when a certain material layer is described as existing on a substrate or another layer, the material layer may be in direct contact with the substrate or another layer, or a third layer may be present between the substrate or another layer. Furthermore, the materials described as constituting each layer are merely examples, and other materials may also be used.

[0030] In addition, the terms "... unit" and "... module" used in the specification refer to units that process functions or operations, and may be implemented by hardware or software, or by a combination of hardware and software.

[0031] The specific implementations described in this embodiment are illustrative and do not limit the technical scope in any way. For the sake of brevity, descriptions of conventional electronic configurations, control systems, software, and other functional aspects may be omitted. Furthermore, connections or connecting members between components shown in the drawings are illustrative of functional connections and / or physical or circuit connections, and may be replaced or added to various functional connections, physical connections, or circuit connections in an actual device.

[0032] Use of the term "said" and similar referents can refer to both the singular and the plural.

[0033] The steps constituting the method may be performed in any suitable order unless expressly stated to be performed in the order described. Furthermore, the use of all exemplary terms (such as, for example, etc.) is merely for the purpose of describing the technical idea in detail, and the scope of the right is not limited by such terms, except as limited by the claims.

[0034] 1 is a diagram illustrating a micro semiconductor chip wet alignment method according to an exemplary embodiment, and FIG 2 is a diagram illustrating a micro semiconductor chip wet alignment apparatus according to an exemplary embodiment.

[0035] A micro semiconductor chip wet alignment method according to an exemplary embodiment will be described with reference to FIGS.

[0036] A transfer substrate 120 including a plurality of grooves 110 is prepared (S101). The transfer substrate 120 may be formed in a single layer or may include multiple layers. The grooves 110 are also provided for disposing a microsemiconductor chip 130. The microsemiconductor chip 130 may include various types of semiconductor chips having a micro size, which may be 1,000 μm or less, or 200 μm or less. The microsemiconductor chip 130 may include, for example, a light emitting diode (LED), a complementary metal oxide semiconductor (CMOS), a CMOS image sensor (CIS), a vertical-cavity surface-emitting laser (VCSEL), a photodiode (PD), a memory device, a two-dimensional material device, etc. The 2D material may be graphene or a carbon nanotube (CNT), etc.

[0037] A liquid is supplied to the groove 110 (S102). Any type of liquid may be used as long as it does not corrode or damage the microsemiconductor chip 130. The liquid may include, for example, one or a combination of a group including water, ethanol, alcohol, polyol, ketone, halocarbon, acetone, flux, and organic solvent. The organic solvent may include, for example, isopropyl alcohol (IPA). The liquids that can be used are not limited to these examples, and various modifications are possible.

[0038] The liquid may be supplied to the groove 110 by various methods, such as a spray method, a dispensing method, an inkjet dot method, or a method of pouring the liquid onto the transfer substrate 120, as will be described later. Meanwhile, the amount of the liquid supplied may be adjusted in various ways so that the liquid fits into the groove 110 or overflows from the groove 110.

[0039] A plurality of micro semiconductor chips 130 are provided on the transfer substrate 120 (S103). The micro semiconductor chips 130 are either directly sprayed onto the transfer substrate 120 without any other liquid, or are provided in a suspension. The micro semiconductor chips 130 in the suspension can be provided by a variety of methods, including a spray method, a dispensing method in which a liquid is dropped drop by drop, an inkjet dot method in which a liquid is ejected like a printing method, or a method in which a suspension is poured onto the transfer substrate 120.

[0040] The transfer substrate 120 is scanned (104) using an absorbent material 140 capable of absorbing liquid. The absorbent material 140 may be any material capable of absorbing liquid, and its shape and structure are not limited. The absorbent material 140 may include, for example, fabric, tissue paper, polyester fiber, paper, or wiper. The absorbent material 140 may be used alone without any auxiliary devices, but is not limited thereto. The absorbent material 140 may also be coupled to a support 150 to facilitate scanning of the transfer substrate 120. The support 150 may have various shapes and structures suitable for scanning the transfer substrate 120. The support 150 may have, for example, a rod, blade, plate, or wiper. The absorbent material 140 may be provided on either side of the support 150, or may wrap around the support 150.

[0041] The absorbent material 140 can be scanned while pressing the transfer substrate 120 with an appropriate pressure. This scanning may involve the absorbent material 140 contacting the transfer substrate 120 and absorbing the liquid as it passes through the grooves 110. This scanning may be performed in various ways, such as sliding, rotating, translating, reciprocating, rolling, spinning, and / or rubbing of the absorbent material 140, and may be performed in either a regular or irregular manner. This scanning may also be performed by moving the transfer substrate 120 instead of moving the absorbent material 140, and the scanning of the transfer substrate 120 may also be performed by sliding, rotating, translating, reciprocating, rolling, spinning, and / or rubbing. It goes without saying that scanning can also be performed by cooperation between the absorber 140 and the transfer substrate 120.

[0042] The step S102 of supplying a liquid to the grooves 110 of the transfer substrate 120 and the step S103 of supplying the microsemiconductor chips 130 to the transfer substrate 120 may be performed in the reverse order to that shown in Fig. 1. Also, the step S102 of supplying a liquid to the grooves 110 of the transfer substrate 120 and the step S103 of supplying the microsemiconductor chips 130 to the transfer substrate 120 may be performed simultaneously in one step. For example, by supplying a suspension containing the microsemiconductor chips 130 to the transfer substrate 120, the liquid and the microsemiconductor chips 130 can be supplied to the transfer substrate 120 simultaneously.

[0043] After the absorber 140 scans the transfer substrate 120, any dummy micro semiconductor chips that do not enter the grooves 110 and remain on the transfer substrate 120 are removed (S105). Steps S102 to S104 are repeated until the grooves 110 are filled with the micro semiconductor chips 130, for example, until all the grooves 110 are filled with the micro semiconductor chips 130 or until all the micro semiconductor chips 130 are placed in the grooves 110. Through these steps, the micro semiconductor chips 130 can be quickly transferred to the transfer substrate 120.

[0044] Next, the transfer process of the micro semiconductor chip 130 will be described in more detail. Referring to Figure 3, the absorbent material 140, which is provided on the surface of the support 150, can be brought into contact with the surface of the transfer substrate 120 and scanned. During scanning, the micro semiconductor chip 130 can be moved by being adsorbed or attached to the surface of the absorbent material 140.

[0045] 4 is an enlarged view of the groove 110. During scanning, the microsemiconductor chip 130 is positioned between the absorbent material 140 and the transfer substrate 120, and the microsemiconductor chip 130 can enter the groove 110 while the absorbent material 140 absorbs the liquid L in the groove 110.

[0046] 5 illustrates a method for transferring the microsemiconductor chip 130 to the groove 110. Referring to FIG. 5, the step of scanning the transfer substrate 120 with the absorbent material 140 may include a step of absorbing the liquid L in the groove 110 (S1041) and a step of placing the microsemiconductor chip 130 in the groove 110 (S1042). During the process of absorbing the liquid L by the absorbent material 140, at least a portion of the liquid L in the groove 110 may be replaced with the microsemiconductor chip 130.

[0047] 1, steps S102, S103, and / or S104 may be repeated as necessary until all of the microsemiconductor chips 130 are transferred to the grooves 110 of the transfer substrate 120. For example, after scanning the transfer substrate 120 with the absorbent material 140, if there is no liquid or the amount of liquid is insufficient in the grooves 110, step S102 of supplying liquid to the grooves 110 may be further performed. If there are not enough microsemiconductor chips 130 on the transfer substrate 120, it is possible to skip step S103 and proceed from step S102 to step S104. If too much liquid is supplied to the transfer substrate 120, a blade (not shown) may be used to remove some of the liquid, if necessary. If there are insufficient microsemiconductor chips 130 on the transfer substrate 120 after scanning the transfer substrate 120 with the absorber 140, a step (S103) of providing microsemiconductor chips 130 on the transfer substrate 120 can be further performed. Through this process, the microsemiconductor chips 130 can be aligned on the transfer substrate 120.

[0048] 6 illustrates an example in which the support 150a has a circular cross section. Similar to the rod-shaped support 150 having a square cross section in FIG. 2, the absorber 140a may be provided on one or the entire surface of the support 150a. The support may also be embodied in various other shapes. Next, an example of a transfer substrate will be described.

[0049] 7, the transfer substrate 1201 may also be a substrate 1202 having a single body or single mold structure including a plurality of grooves 110. The substrate 1202 may include, for example, but is not limited to, an organic material such as silicon, glass, sapphire, or polymer, an inorganic material, and / or metal, and may be fabricated by a photoresist patterning method, an etching method, a molding method, etc. The grooves 110 may serve to guide the transfer of the microsemiconductor chip when the microsemiconductor chip is transferred to the transfer substrate 1201.

[0050] The groove 110 may have a cross-sectional area larger than the area of ​​the microsemiconductor chip so that it can accommodate the microsemiconductor chip. The groove 110 may have an area large enough to accommodate only one microsemiconductor chip, or may have an area large enough to accommodate multiple microsemiconductor chips. The groove 110 may have a shape similar to the cross-section of the microsemiconductor chip, for example, a circular or polygonal cross-section. The groove 110 may have a depth d that is smaller or larger than the thickness of the microsemiconductor chip, for example, a depth d that is smaller than twice the thickness of the microsemiconductor chip or in the range of 0.5 to 1.5 times the thickness of the microsemiconductor chip. Meanwhile, the bottom surface of the groove 110 may have a roughness of 50 nm or less.

[0051] 8, the transfer substrate 1201A may further include a metal layer 1203 on the surface of the substrate 1202. The metal layer 1203 may include Ag, Au, Pt, Ni, Cr, and / or Al and may have a different surface energy than the substrate 1202. A polymer may be further bonded to the metal layer 1203. This difference in surface energy not only ensures that the microsemiconductor chips are successfully transferred to the grooves 110, but also allows any microsemiconductor chips remaining in the grooves 110 to be successfully detached from the transfer substrate 1201A during a cleaning step. To achieve a large surface energy difference, the metal layer 1203 is selected to be hydrophobic, and the grooves 110 are selected to be hydrophilic.

[0052] 9, the transfer substrate 1208 may include a substrate 1204 and a transfer mold 1205 provided on the surface of the substrate 1204. The transfer mold 1205 may include a plurality of grooves 1101 in the form of through-holes or grooves. The substrate 1204 may be made of silicon, glass, and / or sapphire, and the transfer mold 1205 may be made of SiO2, Si, SiN, and / or photoresist. Referring to FIG. 10, the transfer substrate 1208A may further include a metal layer 1206 on the surface of the transfer mold 1205, as described in the embodiment of FIG. 8.

[0053] 11, the transfer substrate 1208B may further include a dielectric material layer 1207 between the substrate 1204 and the transfer mold 1205 shown in FIG. 10. The dielectric material layer 1207 may include, for example, SiO2, SiN, Si, AlN, Al2O3, and / or NiO2. The dielectric material layer 1207 may be hydrophilic and may help the grooves 1101 to be filled with a liquid.

[0054] Next, various examples of methods for supplying the liquid and the micro semiconductor chip to the transfer substrate will be described.

[0055] 12 and 2, a first liquid is supplied to the grooves 110 of the transfer substrate 120 (S202).

[0056] After the first liquid is supplied to the groove 110, a suspension containing a second liquid and the microsemiconductor chips 130 is supplied to the transfer substrate 120 (S203). The first liquid previously supplied to the transfer substrate 120 and the second liquid of the suspension may be the same or different. After the microsemiconductor chips 130 are supplied to the transfer substrate 120, an absorbent material 140 capable of absorbing the liquid is scanned across the transfer substrate 120 (S204). The absorbent material and scanning are the same as those described with reference to FIGS. 1 to 11, and therefore will not be described in detail here.

[0057] 13 and 14, the step of supplying a liquid to the transfer substrate (S102) and the step of supplying a microsemiconductor chip 130 (S103) shown in FIG. 1 may be performed simultaneously. To supply the liquid and the microsemiconductor chip 130 to the transfer substrate simultaneously, a suspension 170 containing the microsemiconductor chip 130 and a liquid L1 may be used. Through the process of supplying the suspension 170 to the transfer substrate 120 (S302), the liquid L1 is supplied to the groove 110 of the transfer substrate 120, and the microsemiconductor chip 130 is supplied to the transfer substrate 120, eliminating the need to supply a liquid to the groove 110 in advance.

[0058] 15 and 16, a suspension 180 containing a liquid L2 and a micro semiconductor chip 130 is prepared (S402), and an absorbent 140 is immersed in the suspension 180 (S403). Through this process, the liquid L2 is absorbed into the absorbent 140, and the micro semiconductor chip 130 can be attached to the surface of the absorbent 140.

[0059] The transfer substrate 120 (FIG. 2) is scanned with the absorbent material 140 to which the microsemiconductor chips 130 are attached (S404). During the scanning process in which the absorbent material 140 passes across the transfer substrate 120, the microsemiconductor chips 130 attached to the absorbent material 140 are supplied to the transfer substrate 120, and the liquid L2 coming out of the absorbent material 140 can enter the groove 110 on the front side in the scanning direction. Then, as the absorbent material 140 passes over the groove 110, the liquid L2 in the groove 110 is further absorbed by the absorbent material 140, and the microsemiconductor chips 130 supplied to the transfer substrate 120 can enter the groove 110.

[0060] 15 and 16 also correspond to the case where a liquid and a microsemiconductor chip are simultaneously supplied to a transfer substrate as described in Fig. 13. When an absorbent material 140 containing a liquid and having a microsemiconductor chip attached thereto passes over a transfer substrate 120 while applying an appropriate pressure, the liquid is supplied to the groove 110, and the microsemiconductor chip 130 can be supplied to the transfer substrate 120.

[0061] 15 and 16, it is not necessary to separately supply liquid to the grooves 110 of the transfer substrate 120, but it is also possible to include a step of supplying liquid to the grooves 110 in advance. Also, if necessary, a step of supplying liquid to the grooves 110 of the transfer substrate 120 can be additionally performed while repeatedly scanning the transfer substrate 120 with the absorber 140.

[0062] 17 shows another example of a wet alignment method for microsemiconductor chips. Liquid is supplied to the transfer substrate 120 (S502), and the microsemiconductor chips 130 are attached to the absorbent material 140a (S503), as shown in FIG. 18. For example, if the microsemiconductor chips 130 are rubbed or touched with the absorbent material 140a, the thin microsemiconductor chips 130 can be attached to the absorbent material 140a due to static electricity or the like. The transfer substrate 120 is then scanned with the absorbent material 140a to which the microsemiconductor chips 130 are attached (S504).

[0063] When the absorbent material 140 scans the transfer substrate 120, the attached microsemiconductor chips 130 are supplied to the transfer substrate 120, and the liquid in the grooves 110 is absorbed by the absorbent material 140a, allowing the microsemiconductor chips 130 to enter the grooves 110.

[0064] FIG. 19 illustrates a micro semiconductor chip wet alignment apparatus according to an exemplary embodiment.

[0065] The micro semiconductor chip wet alignment apparatus 1500 may include a liquid supplier 1000 that supplies liquid to a transfer substrate 120 having a plurality of grooves 110, a micro semiconductor chip supplier 1100 that supplies micro semiconductor chips to the transfer substrate 120, and an absorbent material 1200 that can absorb the liquid. The wet alignment apparatus 1500 may include a processor 1600 configured to control the movement and operation of the liquid supplier 1000, the microsemiconductor chip supplier 1100, and the absorber 1200, and a memory 1700 configured to store computer-readable instructions performed by the processor 1600 to control the liquid supplier 1000, the microsemiconductor chip supplier 1100, and the absorber 1200, for example, to perform steps S101 to S105 (FIG. 1), S1041 to S1042 (FIG. 5), S202 to S204 (FIG. 12), S302 to S304 (FIG. 13), S402 to S404 (FIG. 15), and S502 to S504 (FIG. 17).

[0066] The liquid supplier 1000 and the microsemiconductor chip supplier 1100 may include switches or valves adapted to open and close the liquid supply channel of the liquid supplier 1000 and the chip supply channel of the microsemiconductor chip supplier 1100 in response to an electronic signal from the processor 1600. The absorbent material 1200 is also coupled to a motor and / or a rotating shaft that is operated by an electronic signal from the processor 1600.

[0067] The liquid supplier 1000 may include a liquid sprayer, a liquid spreader, a liquid dispenser, an inkjet dotter, a liquid diffuser, etc. The shape and structure of the liquid supplier 1000 are not limited as long as it can appropriately supply liquid to the transfer substrate 120.

[0068] The micro semiconductor chip dispenser 1100 can dispense the micro semiconductor chips onto the transfer substrate 120 in various ways, such as by sprinkling or dispersing them. When dispensing a suspension onto the transfer substrate 120, the liquid dispenser 1000 and the micro semiconductor chip dispenser 1100 may be integrated into one unit. Even when the micro semiconductor chip dispenser 1100 dispenses a suspension onto the transfer substrate 120, a separate liquid may be dispensed onto the transfer substrate 120 in advance.

[0069] The absorbent material 1200 can absorb the liquid in the grooves 110 while scanning the transfer substrate 120. The absorbent material 1200 can be anything that can absorb liquid, such as fabrics such as cotton or wool, tissue paper, polyester fiber, paper, and / or wipes.

[0070] 20 is an enlarged view of a woven fabric as an example of an absorbent material. The woven fabric 1200a can have gaps 1200b smaller than the microsemiconductor chips to prevent the microsemiconductor chips from being pinched or inserted.

[0071] FIG. 21 illustrates a micro semiconductor chip wet alignment apparatus according to another exemplary embodiment.

[0072] The micro semiconductor chip wet alignment apparatus 1500A may include a liquid supplier 1000, a micro semiconductor chip supplier 1100, and an absorbent material 1200 as described with reference to FIG. 19. The micro semiconductor chip wet alignment apparatus 1500A may further include a pre-bonder 1300. The pre-bonder 1300 may include a lamp or a heater to apply heat for pre-bonding the micro semiconductor chips placed in the grooves 110 of the transfer substrate 120 to the transfer substrate 120. The micro semiconductor chip wet alignment apparatus 1500A may further include a cleaner 1400 to remove dummy micro semiconductor chips remaining after the micro semiconductor chips are transferred to the transfer substrate 120.

[0073] An operation of transferring a micro semiconductor chip by the micro semiconductor chip wet alignment method according to an exemplary embodiment will be described.

[0074] 22, the microsemiconductor chip 130A may have a horizontal electrode structure with a negative electrode and a positive electrode on one side. The microsemiconductor chip 130A may include a first side 131 and an opposite second side 132. A first electrode 133 and a second electrode 134 spaced apart from each other may be located on the first side 131. The first electrode 133 and the second electrode 134 may be formed of a metal such as Al, Au, Pt, Mo, Cu, Ag, and / or Zn, and the first electrode 133 is a positive electrode and the second electrode 134 is a negative electrode.

[0075] FIG. 23 shows the operation of transferring a micro semiconductor chip having a horizontal electrode structure onto a transfer substrate.

[0076] 23, during the scanning process, the liquid L is absorbed into the absorbent material 140, and the microsemiconductor chip 130A may move and be placed in the groove 110. The first electrode 133 and the second electrode 134 of the microsemiconductor chip 130A may be hydrophobic, and during the scanning process, the first electrode 133 and the second electrode 134 are also aligned toward the upper opening of the groove 110 due to interaction with the liquid L. When placed in the groove 110, the microsemiconductor chip 130A is immersed in the liquid L.

[0077] 24, when the first electrode 133 and the second electrode 134 are positioned toward the lower bottom of the groove 110, the microsemiconductor chip 130A is moved by the flow of the liquid L absorbed by the absorbent material 140 during the scanning process, and the first electrode 133 and the second electrode 134 are also arranged toward the upper opening of the groove 110. In the drawing, the microsemiconductor chip 130A is shown floating in the liquid L, but it may also be immersed in the liquid L.

[0078] 25, the micro semiconductor chip 130B includes only a first electrode 133a on a first surface 131, and no electrodes are provided on other surfaces. In the case of such a micro semiconductor chip 130B with a vertical electrode structure, other electrodes are provided not only on the micro semiconductor chip 130B but also on a driving circuit board (described below). The first electrode 133a may be hydrophobic and may play a role in helping the micro semiconductor chip 130B enter the groove 110 in a certain direction during the scanning process described above.

[0079] 26 and 27 illustrate the operation of transferring a micro semiconductor chip with a vertical electrode structure. The operation and principle of the transfer are the same as those explained in FIGS. 23 and 24, and detailed explanations will be omitted.

[0080] FIG. 28 illustrates an example of a state in which micro semiconductor chips are aligned on a transfer substrate.

[0081] The micro semiconductor chips 130 transferred by the wet alignment method are irregularly and randomly arranged in the grooves 110 of the transfer substrate 120. While micro semiconductor chips aligned by a conventional stamping method are regularly arranged in the grooves of the transfer substrate, the micro semiconductor chips 130 aligned according to the embodiment of the present disclosure are irregularly arranged in the grooves 110 of the transfer substrate 120. However, after the transfer of the micro semiconductor chips 130 is completed and the dummy micro semiconductor chips not arranged in the grooves 110 are removed, the transfer substrate can be scanned with a clean absorbent material one or more times to reduce the irregularity of the irregularly arranged micro semiconductor chips 130.

[0082] FIG. 29 is a schematic illustration of a display transfer structure according to an example embodiment.

[0083] The display transfer structure 2000 may include a transfer substrate 2120 including a plurality of grooves 2110 in a substrate 2115 , and a microsemiconductor chip 2130 mounted in the plurality of grooves 2110 .

[0084] The microsemiconductor chip 2130 includes a first electrode 2131 and a second electrode 2132 on a surface facing the upper opening of the groove 2110, and does not include an electrode on a surface facing the bottom of the groove 2110. The microsemiconductor chip 2130 may include an n-type semiconductor layer 2133, an active layer 2134, and a p-type semiconductor layer 2135. The n-type semiconductor layer 2133 is an n-type GaN layer, and the p-type semiconductor layer 2135 is also a p-type GaN layer. The active layer 2134 may have, for example, a quantum well structure or a multiple quantum well structure. The transfer substrate 2120 may further include a metal layer 2140 on the upper surface of the substrate 2115. The metal layer 2140 may include Ag, Au, Pt, Ni, Cr, and / or Al, and, as described above, may serve to ensure that the dummy microsemiconductor chip is easily separated from the transfer substrate 2120.

[0085] 29, the transfer substrate 2120 may be formed as a single body or may further include a metal layer 2140, but various other configurations are possible. Various examples of the transfer substrate 2120 have been described with reference to FIGS. 7 to 11, and therefore will not be described in detail here.

[0086] Figure 30 illustrates an example in which another layer is further provided in the display transfer structure illustrated in Figure 29. Detailed descriptions of the same components as those in the display transfer structure 2000 illustrated in Figure 29 will be omitted.

[0087] The display transfer structure 2000A may include an insulating layer 2138 provided on the transfer substrate 2120, and driving circuits 2161 and 2162 provided on the insulating layer 2138 and connected to the first electrode 2131 and the second electrode 2132. While FIG. 30 illustrates an example in which the driving circuits 2161 and 2162 are provided on the upper side of the transfer substrate 2120, they may also be provided on the lower side of the transfer substrate 2120. The three microsemiconductor chips 2130 included in the display transfer structure 2000A can emit different color lights. For example, the three microsemiconductor chips 2130 can emit red light (R), green light (G), and blue light (B), respectively. Such a transfer structure 2000A can also be used in an RGB self-emitting LED television (TV).

[0088] FIG. 31 illustrates an example in which the display transfer structure of FIG. 30 is further provided with a driving circuit board.

[0089] In Figure 31, components using the same reference numerals as those in Figure 30 have substantially the same functions and configurations as those described in Figure 30, so detailed description will be omitted here.

[0090] The display transfer structure 2000B may include a driving circuit board 2100 below the transfer substrate 2120. The driving circuit board 2100 may include a driving transistor, a switch transistor, and a capacitor. The display transfer structure 2000B may include driving circuits 2171 and 2172 connected to the first electrode 2131 and the second electrode 2132 on the insulating layer 2138, and the driving circuit 2131 is also connected to the driving circuit board 2100.

[0091] Figure 32 shows an example in which a color conversion layer is further provided in the display transfer structure of Figure 30. In Figure 32, components using the same reference numerals as those in Figure 30 have substantially the same functions and configurations as those described in Figure 30, so detailed description thereof will be omitted here.

[0092] The display transfer structure 2000C may include insulating layer 2138, partitions 2145 spaced apart from each other, and a color conversion layer 2150 disposed between the partitions 2145. The color conversion layer 2150 may convert the color of light emitted from the microsemiconductor chip 2130. The microsemiconductor chip 2130 may emit a first color light, for example, blue light. However, this is just an example, and the color conversion layer 2150 may also emit light of another wavelength that can excite the color conversion layer 2150.

[0093] The color conversion layer 2150 may include a first color conversion layer 2151 that converts light from the microsemiconductor chip 2130 into a first color light, a second color conversion layer 2152 that converts the light into a second color light, and a third color conversion layer 2153 that converts the light into a third color light. The second color light may be, for example, green light, and the third color light may be, for example, red light.

[0094] If the microsemiconductor chip 2130 emits blue light, the first color conversion layer 2151 may include a resin that transmits blue light without light conversion. The second color conversion layer 2152 can convert the blue light emitted from the microsemiconductor chip 2130 to emit green light. The second color conversion layer 2152 may include quantum dots (QDs) that are excited by blue light and emit green light. The QDs may have a core-shell structure having a core and a shell, or a particle structure without a shell. The core-shell structure may be a single-shell structure or a multi-shell structure, for example, a double-shell structure.

[0095] The quantum dots may comprise II-VI semiconductors, III-V semiconductors, IV-VI semiconductors, IV semiconductors, and / or graphene quantum dots. The quantum dots may comprise, for example, Cd, Se, Zn, S, and / or InP, and each quantum dot may have a diameter of tens of nanometers or less, for example, a diameter of about 10 nm or less.

[0096] The second color conversion layer 2152 may also include a phosphor that is excited by the blue light emitted from the microsemiconductor chip 2130 and emits green light.

[0097] The third color conversion layer 2153 can convert the blue light emitted from the microsemiconductor chip 2130 into red light and emit the converted red light. The third color conversion layer 2153 may include quantum dots of a predetermined size that are excited by blue light and emit red light, or may include a phosphor that is excited by blue light emitted from the microsemiconductor chip 2130 and emits red light.

[0098] FIG. 33 illustrates a display transfer structure according to another exemplary embodiment. The display transfer structure 3000 may include a driving circuit substrate 3010 including a transistor and a capacitor. The microsemiconductor chip 2130 aligned on the transfer substrate 2120 shown in Fig. 29 may be transferred and bonded to the driving circuit substrate 3010. The driving circuit substrate 3010 includes a first circuit 3021 and a second circuit 3022, and when the microsemiconductor chip 2130 is transferred, the first electrode 2131 is connected to the first circuit 3021 and the second electrode 2132 is also connected to the second circuit 3022.

[0099] FIG. 34 illustrates a display transfer structure according to another exemplary embodiment. The display transfer structure 3100 may include a transfer substrate 3120 having a plurality of grooves 3110 in a substrate 3115, and a microsemiconductor chip 3130 positioned in the grooves 3110. The microsemiconductor chip 3130 includes an electrode 3131 on a surface facing the upper opening of the groove 3110, and does not include an electrode on a surface facing the lower bottom of the groove 3110.

[0100] The microsemiconductor chip 3130 may include an n-type semiconductor layer 3133, an active layer 3134, and a p-type semiconductor layer 3135. The n-type semiconductor layer 3133 is an n-type GaN layer, the p-type semiconductor layer 3135 is also a p-type GaN layer, and the active layer 3134 may have a quantum well structure or a multiple quantum well structure.

[0101] 35, the micro semiconductor chip 3130 aligned on the transfer substrate 3120 shown in FIG. 34 is also transferred to a driving circuit substrate 3200. The driving circuit substrate 3200 includes a first circuit 3210 and a second circuit 3220, and the first electrode 3131 of the micro semiconductor chip 3130 is also connected to the first circuit 3210.

[0102] 36, an insulating layer 3150 is also provided in the structure shown in FIG. 35. A second electrode 3132 may be formed on the microsemiconductor chip 3130 by patterning the insulating layer 3150, and the second electrode 3132 may be connected to the second circuit 3220.

[0103] Meanwhile, the display transfer structure according to the exemplary embodiment may have one groove in an area corresponding to one pixel, or may have a plurality of grooves in an area corresponding to one pixel.

[0104] FIG. 37 illustrates an exemplary display transfer structure. The display transfer structure 4000 may include a transfer substrate 4120 including a plurality of grooves and a microsemiconductor chip 4130 provided in the grooves. The transfer substrate 4120 may include regions 4125 corresponding to subpixels, and each region 4125 may include a plurality of grooves. A pixel may represent a basic unit for displaying color in a display device, and the region 4140 corresponding to a pixel may include regions 4125 corresponding to a plurality of subpixels. For example, a pixel may include a first subpixel emitting a first color light of red, a second subpixel emitting a second color light of green, and a third subpixel emitting a third color light of blue. One or more microsemiconductor chips 4130 may be provided in the region 4125 corresponding to each subpixel.

[0105] For example, each region 4125 includes a first groove 4111 and a second groove 4112, and a microsemiconductor chip 4130 may be provided in each of the first groove 4111 and the second groove 4112. In this way, when each region 4125 is provided with a plurality of grooves 4111 and 4112, even if a microsemiconductor chip 4130 falls out of one of the grooves 4111 and 4112, a microsemiconductor chip 4130 may be provided in the remaining groove, thereby reducing the error rate and repair processes.

[0106] For example, the microsemiconductor chip 4130 may have a size of 200 μm or less. The size of the microsemiconductor chip 4130 is also expressed as the maximum diameter of a cross section perpendicular to the direction in which light is emitted. The microsemiconductor chip 4130 and the grooves 4111 and 4112 may have various shapes such as a triangular cross section, a rectangular cross section, or a circular cross section, and the grooves 4111 and 4112 may have a size corresponding to the number of microsemiconductor chips 4130, as necessary.

[0107] FIG. 38 illustrates another example display transfer structure. The display transfer structure 5000 includes a plurality of regions 5125 corresponding to subpixels. The grooves 5111 and 5112 differ from the embodiment of FIG. 37 in that they may be large enough to accommodate a plurality of microsemiconductor chips 5130, and the size of the groove may also be expressed by a cross-sectional area. For example, the first groove 5111 and the second groove 5112 may each be large enough to accommodate two or more microsemiconductor chips 5130. FIGS. 39 to 41 are enlarged views illustrating various examples of microsemiconductor chips arranged in a region corresponding to one subpixel of the transfer substrate.

[0108] 39, a first groove 6111 and a second groove 6112 may be provided in a region 6125 corresponding to a subpixel, and one microsemiconductor chip 6130 may be provided in each of the first groove 6111 and the second groove 6112. The microsemiconductor chip 6130 may have a circular cross section, and an electrode 6135 may be positioned toward the upper opening of the first groove 6111 and the second groove 6112.

[0109] The first groove 6111 and the second groove 6112 are arranged diagonally across the region 6125, which reduces the possibility of the microsemiconductor chip 6130 coming loose compared to when the first groove 6111 and the second groove 6112 are arranged in a line.

[0110] 40, a first groove 6211 and a second groove 6212 may be provided in a region 6225 corresponding to a subpixel, and a plurality of micro semiconductor chips 6230 may be provided in each of the first groove 6211 and the second groove 6212. The first groove 6211 and the second groove 6212 may have a size sufficient to accommodate the plurality of micro semiconductor chips 6230, and the electrode 6235 may be positioned toward an upper opening of the first groove 6211 and the second groove 6212.

[0111] 41, eight grooves 6311 may be formed in a region 6325 corresponding to a subpixel. One microsemiconductor chip 6330 may be formed in each of the eight grooves 6311, and an electrode 6335 may be positioned facing the upper opening of each groove 6311. When there are many grooves 6311 in the region 6325 corresponding to a subpixel, even if a microsemiconductor chip falls out of some of the grooves, pixel operation is not affected, and therefore the pixel defect rate can be reduced and the number of repair processes can be reduced.

[0112] FIG. 42 illustrates a block diagram of an electronic device including a display device according to an exemplary embodiment.

[0113] 42 , an electronic device 8201 may be included in a network environment 8200. In the network environment 8200, the electronic device 8201 may communicate with another electronic device 8202 via a first network 8298 (such as a short-range wireless communication network) or may communicate with another electronic device 8204 and / or a server 8208 via a second network 8299 (such as a long-range wireless communication network). The electronic device 8201 may communicate with the electronic device 8204 via the server 8208. The electronic device 8201 may include a processor 8220, a memory 8230, an input device 8250, an audio output device 8255, a display device 8260, an audio module 8270, a sensor module 8276, an interface 8277, a haptic module 8279, a camera module 8280, a power management module 8288, a battery 8289, a communication module 8290, a subscriber identity module 8296, and / or an antenna module 8297. The electronic device 8201 may omit some of these components or may include other components. Some of these components may be implemented as a single integrated circuit. For example, the sensor module 8276 (such as a fingerprint sensor, an iris sensor, or an illuminance sensor) may be embedded in the display device 8260 (such as a display).

[0114] The processor 8220 can execute software (e.g., program 8240) and control one or more other components (e.g., hardware components, software components) of the electronic device 8201 coupled to the processor 8220, and can perform various data processing or calculations. As part of the data processing or calculations, the processor 8220 can load instructions and / or data received from other components (e.g., sensor module 8276, communication module 8290) into volatile memory 8232, process the instructions and / or data stored in volatile memory 8232, and store the resulting data in non-volatile memory 8234. The processor 8220 may include a main processor 8221 (e.g., central processing unit, application processor), and an auxiliary processor 8223 (e.g., graphics processing unit, image signal processor, sensor hub processor, communication processor), which can operate independently of or together with the main processor 8221. The auxiliary processor 8223 can use less power than the main processor 8221 and can perform specialized functions.

[0115] The auxiliary processor 8223 acts in place of the main processor 8221 while the main processor 8221 is in an inactive state (sleep state), or, together with the main processor 8221, controls functions and / or states related to some components (such as the display device 8260, the sensor module 8276, and the communication module 8290) of the electronic device 8201 while the main processor 8221 is in an active state (application execution state). The auxiliary processor 8223 (such as an image signal processor or a communication processor) may also be embodied as part of other functionally related components (such as the camera module 8280 and the communication module 8290).

[0116] The memory 8230 can store various data required by the components of the electronic device 8201 (e.g., processor 8220, sensor module 8276, etc.). The data may include, for example, software (e.g., program 8240) and input and / or output data related to the instructions associated therewith. The memory 8230 may include volatile memory 8232 and / or non-volatile memory 8234. The non-volatile memory 8234 may include internal memory 8236 and / or external memory 8238.

[0117] The programs 8240 may also be stored as software in the memory 8230 and may include an operating system 8242 , middleware 8244 and / or applications 8246 .

[0118] The input device 8250 can receive instructions and / or data from outside (such as a user) the electronic device 8201 to be used by components (such as the processor 8220) of the electronic device 8201. The input device 8250 may include a remote controller, a microphone, a mouse, a keyboard, and / or a digital pen (such as a stylus pen).

[0119] The audio output device 8255 can output audio signals to the outside of the electronic device 8201. The audio output device 8255 may include a speaker and / or a receiver. The speaker is used for general purposes such as multimedia playback or recording playback, and the receiver is used to receive incoming calls. The receiver may be combined with the speaker or may be implemented as a separate device.

[0120] The display device 8260 can visually present information external to the electronic device 8201. The display device 8260 may include a display, a holographic device or projector, and control circuitry for controlling the device. The display device 8260 may be manufactured by the manufacturing method described with reference to Figures 1 through 28 and may include the display transfer structure described with reference to Figures 29 through 41. The display device 8260 may include touch circuitry configured to sense a touch and / or sensor circuitry (such as a pressure sensor) configured to measure the strength of a force generated by the touch.

[0121] The audio module 8270 can convert sound into an electrical signal or vice versa. The audio module 8270 can acquire sound via the input device 8250 or output sound via the audio output device 8255 and / or speakers and / or headphones of another electronic device (such as electronic device 8202) directly or wirelessly coupled to the electronic device 8201.

[0122] The sensor module 8276 can sense an operating state (e.g., power, temperature) of the electronic device 8201 or an external environmental state (e.g., user state) and generate an electrical signal and / or data value corresponding to the sensed state. The sensor module 8276 may include a gesture sensor, a gyro sensor, a barometric pressure sensor, a magnetic sensor, an acceleration sensor, a grip sensor, a proximity sensor, a color sensor, an IR (infrared) sensor, a biometric sensor, a temperature sensor, a humidity sensor, and / or an illuminance sensor.

[0123] The interface 8277 may support one or more specified protocols used for the electronic device 8201 to be directly or wirelessly coupled to other electronic devices (such as the electronic device 8202). The interface 8277 may include a high definition multimedia interface (HDMI), a universal serial bus (USB) interface, an SD card interface, and / or an audio interface.

[0124] The connection terminal 8278 may include a connector that allows the electronic device 8201 to be physically connected to another electronic device (such as the electronic device 8202). The connection terminal 8278 may include an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (such as a headphone connector).

[0125] The haptic module 8279 can convert electrical signals into mechanical stimuli (such as vibrations or movements) or electrical stimuli that can be perceived by the user via touch or kinesthetic sensations. The haptic module 8279 may include motors, piezoelectric elements, and / or electrical stimulators.

[0126] The camera module 8280 can capture still and video images. The camera module 8280 may include a lens assembly including one or more lenses, an image sensor, an image signal processor, and / or a flash. The lens assembly included in the camera module 8280 can collect light emitted from a subject being imaged.

[0127] The power management module 8288 can manage the power supplied to the electronic device 8201. The power management module 8288 may also be embodied as part of a power management integrated circuit (PMIC).

[0128] The battery 8289 can provide power to the components of the electronic device 8201. The battery 8289 may include a non-rechargeable primary battery, a rechargeable secondary battery, and / or a fuel cell.

[0129] The communication module 8290 can support the establishment of a direct (wired) communication channel and / or a wireless communication channel between the electronic device 8201 and other electronic devices (such as the electronic device 8202, the electronic device 8204, and the server 8208) and the execution of communication via the established communication channel. The communication module 8290 may include one or more communication processors that operate independently of the processor 8220 (such as an application processor) and support the direct communication and / or wireless communication. The communication module 8290 may include a wireless communication module 8292 (such as a cellular communication module, a short-range wireless communication module, or a global navigation satellite system (GNSS) communication module) and / or a wired communication module 8294 (such as a local area network (LAN) communication module or a power line communication module). Among these communication modules, the communication module can communicate with other electronic devices via a first network 8298 (a short-range communication network such as Bluetooth, Wi-Fi (wireless fidelity) direct, or IrDA (infrared Data Association)) or a second network 8299 (a long-range communication network such as a cellular network, the Internet, or a computer network (LAN, WAN, etc.)). These various types of communication modules can be integrated into a single component (e.g., a single chip) or embodied as multiple separate components (multiple chips). The wireless communication module 8292 can identify and authenticate the electronic device 8201 in a communication network such as the first network 8298 and / or the second network 8299 using subscriber information (e.g., an International Mobile Subscriber Identity (IMSI)) stored in the subscriber identification module 8296.

[0130] The antenna module 8297 can transmit signals and / or power to or receive signals from the outside (e.g., other electronic devices). The antenna may include a reflector formed of a conductive pattern on a substrate (e.g., a PCB). The antenna module 8297 may include one or more antennas. When multiple antennas are included, the communication module 8290 can select an antenna from the multiple antennas that is suitable for a communication method used in a communication network such as the first network 8298 and / or the second network 8299. Signals and / or power are transmitted or received between the communication module 8290 and other electronic devices via the selected antenna. In addition to the antenna, other components (e.g., a radio frequency integrated circuit (RFIC)) may also be included as part of the antenna module 8297.

[0131] Some of the components are connected to each other via a communication method with peripheral devices (bus, GPIO (general purpose input and output), SPI (serial peripheral interface), MIPI (mobile industry processor interface), etc.) and can exchange signals (commands, data, etc.).

[0132] Commands or data are transmitted and received between the electronic device 8201 and an external electronic device 8204 via a server 8208 connected to a second network 8299. The other electronic devices 8202 and 8204 may be the same as or different from the electronic device 8201. All or part of the operations performed by the electronic device 8201 may also be performed by one or more of the other electronic devices 8202, 8204, and 8208. For example, when the electronic device 8201 needs to perform a certain function or service, instead of performing the function or service independently, it may request one or more other electronic devices to perform the function or service in whole or in part. The one or more other electronic devices that receive the request may perform additional functions or services related to the request and transmit the results of the execution to the electronic device 8201. For this purpose, cloud computing, distributed computing, and / or client-server computing technologies may be used.

[0133] 43 illustrates an example in which an electronic device according to an exemplary embodiment is applied to a mobile device. The mobile device 9100 may include a display device 9110, and the display device 9110 may include the display transfer structure described with reference to FIGS. 29 to 41. The display device 9110 may have a folding structure, for example, a multi-foldable structure.

[0134] 44 illustrates an example in which a display device according to an exemplary embodiment is applied to an automobile. The display device may also be a head-up display device 9200 for an automobile, and may include a display 9210 provided in a region of the automobile and a light path changing member 9220 that changes the light path so that the driver can view an image generated by the display 9210.

[0135] Figure 45 illustrates an example in which a display device according to an exemplary embodiment is applied to augmented reality or virtual reality glasses. The augmented reality glasses 9300 may include a projection system 9310 that forms an image and an element 9320 that directs the image from the projection system 9310 to a user's eye. The projection system 9310 may include a display transfer structure as described with reference to Figures 29 to 42.

[0136] 46 illustrates an example in which a display device according to an exemplary embodiment is applied to a large-scale signage. The signage 9400 can also be used for outdoor advertising using digital information displays, and advertising content can be controlled via a communication network. The signage 9400 can also be implemented using the electronic device described with reference to FIG. 42, for example.

[0137] 47 illustrates an example in which a display device according to an exemplary embodiment is applied to a wearable display. The wearable display 9500 may include the display transfer structure described with reference to FIGS. 29 to 41, and may also be implemented using the electronic device described with reference to FIG.

[0138] In addition to these, the display device according to the exemplary embodiment can also be applied to various other products such as a rollable TV and a stretchable display.

[0139] The above-described embodiments are merely illustrative, and those skilled in the art will appreciate that various modifications and equivalent embodiments are possible. Therefore, the true technical scope of protection of the illustrative embodiments is determined by the technical ideas set forth in the claims. [Explanation of symbols]

[0140] 110,1101 Groove 120, 1201, 1203 Transfer substrate 130, 130A, 130B Micro semiconductor chip 140,1200 absorbent material 150 Support stand 133,134,133a electrode 1000 liquid supply 1100 Micro semiconductor chip supplier

Claims

1. providing a transfer substrate including a plurality of grooves; providing a liquid into the grooves of the transfer substrate; providing a micro semiconductor chip on the transfer substrate; scanning the transfer substrate with an absorbent material capable of absorbing the liquid to align the micro semiconductor chips with the grooves.

2. The method for wet alignment of micro semiconductor chips according to claim 1 , wherein the step of supplying the liquid includes a spraying method, a dispensing method, an inkjet dot method, and / or a method of flowing the liquid onto the transfer substrate.

3. 3. The method for wet alignment of microsemiconductor chips according to claim 1, wherein the step of supplying the liquid and the step of supplying the microsemiconductor chips occur simultaneously.

4. 2. The micro semiconductor chip wet alignment method according to claim 1, wherein the step of supplying the liquid and the step of supplying the plurality of micro semiconductor chips occur in a single process, and the step of supplying the liquid and the step of supplying the micro semiconductor chips include a step of supplying a suspension containing the liquid and the micro semiconductor chips onto the transfer substrate.

5. The method for wet alignment of micro semiconductor chips according to claim 4 , wherein the step of supplying the suspension to the transfer substrate includes a spraying method, a dispensing method, an inkjet dotting method, and / or a method of flowing the suspension onto the transfer substrate.

6. 2. The micro semiconductor chip wet alignment method according to claim 1, wherein the steps of supplying the liquid, supplying the micro semiconductor chip, and scanning the transfer substrate are performed by immersing the absorbent material in a suspension containing the liquid and the micro semiconductor chip, and scanning the transfer substrate with the absorbent material.

7. 2. The micro semiconductor chip wet alignment method according to claim 1, wherein the step of providing the micro semiconductor chip includes the steps of: attaching the micro semiconductor chip to the absorbent material; and contacting the absorbent material to which the micro semiconductor chip is attached with the transfer substrate.

8. 2. The micro semiconductor chip wet alignment method according to claim 1, wherein the step of supplying the micro semiconductor chips includes the steps of: preparing a suspension by putting the plurality of micro semiconductor chips in a liquid different from the liquid supplied to the grooves of the transfer substrate; and providing the suspension to the transfer substrate.

9. The method of claim 1 , wherein the steps of supplying the liquid, supplying the microsemiconductor chip, and / or scanning the transfer substrate are repeated multiple times.

10. The method for wet alignment of microsemiconductor chips according to claim 1 , wherein the step of scanning the transfer substrate includes a step of bringing the absorbent material into contact with the transfer substrate and passing through the grooves.

11. 11. The microsemiconductor chip wet alignment method according to claim 1, wherein the step of scanning the transfer substrate comprises reciprocating, translating, rotating, rolling, rubbing, and / or spinning the absorber, or comprises reciprocating, rotating, translating, rolling, rubbing, and / or spinning the transfer substrate.

12. 12. The method for wet alignment of microsemiconductor chips according to claim 1, wherein the liquid comprises one or a combination of more than one of the group including water, ethanol, alcohol, polyol, ketone, halocarbon, acetone, flux, and organic solvent.

13. The method for wet alignment of micro semiconductor chips according to claim 1 , wherein the absorbent material comprises a fabric, tissue paper, polyester fiber, paper, or wiper.

14. 14. The microsemiconductor chip wet alignment method according to claim 1, wherein the microsemiconductor chip includes an electrode on one surface, and the electrode of the microsemiconductor chip inserted in the groove is positioned facing the upper opening through the step of scanning the transfer substrate.

15. 15. The method for wet alignment of micro semiconductor chips according to claim 14, wherein the electrodes comprise Al, Au, Pt, Mo, Cu, Ag and / or Zn.

16. The method for wet alignment of microsemiconductor chips according to claim 1 , wherein the transfer substrate comprises a substrate and a metal layer provided on an upper surface of the substrate.

17. 17. The method for wet alignment of micro semiconductor chips according to claim 16, wherein the metal layer comprises Ag, Au, Pt, Ni, Cr and / or Al.

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