Substrate bonding system and substrate bonding method

Abstract

A substrate bonding system according to an aspect of the present disclosure is provided with: a surface treatment module for performing plasma treatment on a surface of a substrate; a film-forming module which is connected to be able to transport the substrate between the film-forming module and the surface treatment module without exposing the substrate to the atmosphere, and which performs a film-forming process on the substrate plasma-treated in the surface treatment module; and a bonding module which is connected to be able to transport the substrate between the bonding module and the film-forming module without exposing the substrate to the atmosphere, and which bonds substrates that have been subjected to the film-forming process in the film-forming module to form a bonded body.

Description

[Technical Field]

[0001] The present disclosure relates to a system and method for bonding substrates. [Background technology]

[0002] When electrode pads are formed by chemical mechanical polishing, dishing (a depression) may occur, where the center of the electrode pad is excessively etched, creating a dish shape. Bonding substrates with dishing reduces the contact area between the electrode pads, resulting in high contact resistance. One known method for increasing the contact area between electrode pads is to form a connecting metal with a planarized top surface on electrode pads formed on different substrates, and then bond the substrates (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2016-21497 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can join wires together with high reliability. [Means for solving the problem]

[0005] A substrate bonding system according to one aspect of the present disclosure includes a surface treatment module that performs plasma treatment on the surfaces of substrates, a film formation module that is connected to the surface treatment module so that the substrates can be transported between the surface treatment module without being exposed to the atmosphere, and that performs film formation treatment on the substrates that have been plasma treated in the surface treatment module, and a joining module that is connected to the film formation module so that the substrates can be transported between the film formation module without being exposed to the atmosphere, and that joins the substrates that have been film-treated in the film formation module to form a joined body. [Effects of the Invention]

[0006] According to the present disclosure, wirings can be joined with high reliability. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram showing a first configuration example of a substrate bonding system according to a first embodiment; [Figure 2] FIG. 10 is a diagram showing a second configuration example of the substrate bonding system according to the first embodiment; [Figure 3] FIG. 10 is a diagram showing a third configuration example of the substrate bonding system according to the first embodiment; [Figure 4] FIG. 10 is a diagram showing a fourth configuration example of the substrate bonding system according to the first embodiment. [Figure 5A] 1A to 1C are cross-sectional views showing an example of a substrate bonding method according to the first embodiment; [Figure 5B] 1A to 1C are cross-sectional views showing an example of a substrate bonding method according to the first embodiment; [Figure 5C] 1A to 1C are cross-sectional views showing an example of a substrate bonding method according to the first embodiment; [Figure 6A] 1A to 1C are cross-sectional views illustrating an example of a substrate bonding method according to the first embodiment; [Figure 6B] 1A to 1C are cross-sectional views illustrating an example of a substrate bonding method according to the first embodiment; [Figure 6C] 1A to 1C are cross-sectional views illustrating an example of a substrate bonding method according to the first embodiment; [Figure 7] FIG. 10 is a diagram showing a first configuration example of a substrate bonding system according to a second embodiment; [Figure 8] FIG. 10 is a diagram showing a second configuration example of the substrate bonding system according to the second embodiment; [Figure 9] FIG. 10 is a diagram showing a third configuration example of the substrate bonding system according to the second embodiment. [Figure 10] FIG. 10 is a diagram showing a fourth configuration example of the substrate bonding system according to the second embodiment. [Figure 11A] 1 is a cross-sectional view showing an example of a substrate bonding method according to a second embodiment; [Figure 11B] 1 is a cross-sectional view showing an example of a substrate bonding method according to a second embodiment; [Figure 12A] 10A and 10B are cross-sectional views illustrating an example of a substrate bonding method according to the second embodiment; [Figure 12B] 10A and 10B are cross-sectional views illustrating an example of a substrate bonding method according to the second embodiment; [Figure 12C] 10A and 10B are cross-sectional views illustrating an example of a substrate bonding method according to the second embodiment; [Figure 12D] 10A and 10B are cross-sectional views illustrating an example of a substrate bonding method according to the second embodiment; [Figure 13A] 10A to 10C are cross-sectional views showing an example of a substrate bonding method according to the second embodiment; [Figure 13B] 10A to 10C are cross-sectional views showing an example of a substrate bonding method according to the second embodiment; [Figure 13C] 10A to 10C are cross-sectional views showing an example of a substrate bonding method according to the second embodiment; [Figure 14] FIG. 10 is a diagram showing a first configuration example of a substrate bonding system according to a third embodiment; [Figure 15] FIG. 10 is a diagram showing a second configuration example of the substrate bonding system according to the third embodiment. [Figure 16] FIG. 10 is a diagram showing a third configuration example of the substrate bonding system according to the third embodiment. [Figure 17] FIG. 10 is a diagram showing a fourth configuration example of the substrate bonding system according to the third embodiment. [Figure 18] 10A to 10C are cross-sectional views showing an example of a substrate bonding method according to the third embodiment; [Figure 19A] 10A to 10C are cross-sectional views (2) illustrating an example of a substrate bonding method according to the third embodiment. [Figure 19B] 10A to 10C are cross-sectional views (2) illustrating an example of a substrate bonding method according to the third embodiment. [Figure 19C] 10A to 10C are cross-sectional views (2) illustrating an example of a substrate bonding method according to the third embodiment. [Figure 19D] 10A to 10C are cross-sectional views (2) illustrating an example of a substrate bonding method according to the third embodiment. [Figure 19E] 10A to 10C are cross-sectional views (2) illustrating an example of a substrate bonding method according to the third embodiment. [Figure 20A] 10A to 10C are cross-sectional views (3) illustrating an example of a substrate bonding method according to the third embodiment. [Figure 20B]10A to 10C are cross-sectional views (3) illustrating an example of a substrate bonding method according to the third embodiment. [Figure 20C] 10A to 10C are cross-sectional views (3) illustrating an example of a substrate bonding method according to the third embodiment. [Figure 21] FIG. 10 is a diagram showing a first configuration example of a substrate bonding system according to a fourth embodiment; [Figure 22] FIG. 10 is a diagram showing a second configuration example of the substrate bonding system according to the fourth embodiment. [Figure 23] FIG. 10 is a diagram showing a third configuration example of the substrate bonding system according to the fourth embodiment. [Figure 24] FIG. 10 is a diagram showing a fourth configuration example of the substrate bonding system according to the fourth embodiment. [Figure 25A] 10A to 10C are cross-sectional views showing an example of a substrate bonding method according to the fourth embodiment; [Figure 25B] 10A to 10C are cross-sectional views showing an example of a substrate bonding method according to the fourth embodiment; [Figure 26A] 10A to 10C are cross-sectional views (2) illustrating an example of a substrate bonding method according to the fourth embodiment. [Figure 26B] 10A to 10C are cross-sectional views (2) illustrating an example of a substrate bonding method according to the fourth embodiment. [Figure 26C] 10A to 10C are cross-sectional views (2) illustrating an example of a substrate bonding method according to the fourth embodiment. [Figure 26D] 10A to 10C are cross-sectional views (2) illustrating an example of a substrate bonding method according to the fourth embodiment. [Figure 27A] 10A to 10C are cross-sectional views (3) illustrating an example of a substrate bonding method according to the fourth embodiment. [Figure 27B] 10A to 10C are cross-sectional views (3) illustrating an example of a substrate bonding method according to the fourth embodiment. [Figure 27C] 10A to 10C are cross-sectional views (3) illustrating an example of a substrate bonding method according to the fourth embodiment. [Figure 28A] FIG. 10 shows a modified example of a processing module. [Figure 28B] FIG. 10 shows a modified example of a processing module. [Figure 29A] Diagram to explain the bonding surfaces between substrates (1) [Figure 29B] Diagram to explain the bonding surfaces between substrates (1) [Figure 30A] Diagram (2) to explain the bonding surfaces between substrates [Figure 30B] Diagram (2) to explain the bonding surfaces between substrates DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, the same or corresponding reference numerals are used to designate the same or corresponding members or components, and redundant descriptions will be omitted.

[0009] [Substrate bonding] When manufacturing a three-dimensional semiconductor device, two substrates with metal (electrode pads) and insulating films on their surfaces after the wiring process (BEOL: Back End Of Line) are prepared, and hybrid bonding is used to bond the metals and insulating films of the two substrates together. In hybrid bonding, the surfaces of the substrates are planarized by chemical mechanical polishing (CMP) during the wiring process.

[0010] As shown in FIG. 29A, planarization by CMP can result in the surfaces of the metals 102 and 202 being significantly recessed relative to the surfaces of the insulating films 101 and 201 of the substrates 100 and 200. When the substrates 100 and 200 are bonded in this state, the contact area between the metals is small even after the metals 102 and 202 expand due to heat treatment, as shown in FIG. 29B. This increases contact resistance and reduces bonding strength. This, in turn, reduces reliability.

[0011] Furthermore, as shown in FIG. 30A, planarization by CMP may result in the surfaces of the metals 102 and 202 being slightly recessed relative to the surfaces of the insulating films 101 and 201 of the substrates 100 and 200. When the substrates 100 and 200 are bonded in this state, the contact area between the metals 102 and 202 increases after expansion of the metals 102 and 202 due to heat treatment, as shown in FIG. 30B. This reduces contact resistance and provides high bonding strength. As a result, reliability is improved.

[0012] However, in the planarization process using CMP, it is difficult to control the amount of recess in the surfaces of the metals 102 and 202 relative to the surfaces of the insulating films 101 and 201.

[0013] Furthermore, the planarization process using CMP can result in excessive etching of the center of the metal, creating a dish-like shape, known as dishing.

[0014] Furthermore, after CMP, the outermost surfaces of the substrates are treated with a corrosion inhibitor such as benzotriazole (BTA) to prevent metal corrosion and oxidation. However, this is removed in the atmosphere using an etching solution such as acid before bonding the two substrates. Therefore, the metal surfaces of each of the two substrates are oxidized before bonding, forming an oxide film. If two substrates are bonded with an oxide film formed on the bonding surface, microscopic defects (voids) will occur on the bonding surface, reducing the bonding strength. This results in reduced reliability. Furthermore, in the atmosphere, moisture and other factors can easily cause gases and other substances to be adsorbed on the bonding surface of the two substrates. If two substrates are bonded with gases and other substances adsorbed on the bonding surface, air bubbles (voids) will occur on the bonding surface, reducing the bonding strength. This results in reduced reliability.

[0015] Below, a substrate bonding system and a substrate bonding method that can control the surface shape of the outermost surface of a substrate and can bond wirings together with high reliability will be described.

[0016] [First embodiment] (Substrate bonding system) A first configuration example of the substrate bonding system of the first embodiment will be described with reference to Fig. 1. The substrate bonding system shown in Fig. 1 is a cluster type in which multiple processing modules are arranged in a star shape around a vacuum transfer chamber, and is a system in which substrates are vacuum-transferred between various processing modules via the vacuum transfer chamber, and two substrates are bonded together after the substrates are subjected to a predetermined process.

[0017] As shown in FIG. 1, the substrate bonding system 1A includes a surface treatment module SM11, a film formation module DM11, a bonding module BM11, a heat treatment module AM11, a vacuum transfer chamber TM11, and load lock chambers LL11a and LL11b.

[0018] The surface treatment module SM11 is connected to the vacuum transfer chamber TM11 via a gate valve G11a. The surface treatment module SM11 is depressurized to a predetermined vacuum atmosphere. The surface treatment module SM11 accommodates, for example, two substrates W1 therein and performs plasma treatment on the surfaces of the two substrates W1 to remove contaminants, natural oxide films, etc. formed on the surfaces of the substrates W1. The plasma treatment may be, for example, a treatment using radicals. The radicals may be, for example, H radicals (H * ), NH radical (NH * The radicals are generated by supplying a plasma generating gas into the surface treatment module SM11 and activating the plasma generating gas using a plasma generating device. Examples of the plasma generating gas include H2, NH3, and CF4. The plasma treatment may also be a treatment using ion energy from plasma ions. Examples of the plasma ions include N + , Ar + , H +Examples of suitable plasma ions include: a plasma generating gas is supplied into the surface treatment module SM11 and activated using a plasma generating device to generate plasma ions; N2, Ar, and H2 are examples of suitable plasma generating gases; and a plasma processing device may be used, for example, to combine a process using radicals with a process using ion energy from plasma ions. However, from the viewpoint of suppressing damage to the surface of the substrate W1, it is preferable that the plasma processing be a process using radicals. Examples of suitable plasma generating devices include a microwave plasma device, an inductively coupled plasma (ICP) device, a capacitively coupled plasma (CCP) device, and a surface wave plasma (SWP) device.

[0019] The film formation module DM11 is connected to the vacuum transfer chamber TM11 via a gate valve G11b. The film formation module DM11 is depressurized to a predetermined vacuum atmosphere. The film formation module DM11 accommodates, for example, two substrates W1 and performs film formation processing on the two substrates W1 to selectively form insulating films on predetermined regions of the substrates W1. As such, the film formation module DM11 is also referred to as a selective film formation module because it is a processing module that selectively forms insulating films on predetermined regions. Examples of insulating films include fluorine-doped silicon dioxide (SiOF). The insulating films are formed by, for example, atomic layer deposition (ALD) or chemical vapor deposition (CVD). Examples of gases used in ALD and CVD include process gases such as SiF, O, and Ar, and purge gases such as H, Ar, and N. The process gas and purge gas may be activated using a plasma generation device. Examples of plasma generating devices include microwave plasma devices, ICP devices, CCP devices, and SWP devices.

[0020] The bonding module BM11 is connected to the vacuum transfer chamber TM11 via a gate valve G11c. The inside of the bonding module BM11 is depressurized to a predetermined vacuum atmosphere. The bonding module BM11 bonds two substrates W1 together to form a bonded body W2 by hybrid bonding, which bonds electrodes and insulating layers together.

[0021] The heat treatment module AM11 is connected to the vacuum transfer chamber TM11 via a gate valve G11d. The heat treatment module AM11 is depressurized to a predetermined vacuum atmosphere. The heat treatment module AM11 accommodates, for example, a bonded body W2 therein and performs heat treatment on the bonded body W2 to increase the bonding strength of the two substrates W1 that constitute the bonded body W2. In this embodiment, the heat treatment module AM11 includes, for example, a laser annealing device or a lamp annealing device.

[0022] The vacuum transfer chamber TM11 has a pentagonal shape in a plan view. The interior of the vacuum transfer chamber TM11 is depressurized to a predetermined vacuum atmosphere. A vacuum transfer robot (not shown) capable of transferring the substrate W1 and the bonded body W2 in a depressurized state is provided in the vacuum transfer chamber TM11. The vacuum transfer robot vacuum-transfers the substrate W1 between the surface treatment module SM11, the film formation module DM11, the bonding module BM11, the heat treatment module AM11, and the load lock chambers LL11a and LL11b. The vacuum transfer robot vacuum-transfers the bonded body W2 between the heat treatment module AM11 and the load lock chambers LL11a and LL11b.

[0023] The load lock chambers LL11a and LL11b are connected to the vacuum transfer chamber TM11 via gate valves G11e and G11f, respectively. The interiors of the load lock chambers LL11a and LL11b can be switched between atmospheric and vacuum atmospheres. The load lock chambers LL11a and LL11b receive the substrate W1 from outside the substrate bonding system 1A and transfer the substrate W1 and the bonded body W2 to outside the substrate bonding system 1A.

[0024] A second configuration example of the substrate bonding system of the first embodiment will be described with reference to Figure 2. The substrate bonding system shown in Figure 2 is a cluster type in which multiple processing modules are arranged in a star shape around a vacuum transfer chamber, and is a system in which substrates are vacuum transferred between various processing modules via the vacuum transfer chamber, and two substrates are bonded after the substrates have been subjected to predetermined processing. In the substrate bonding system shown in Figure 2, each processing module accommodates one substrate W1 and performs various processes on the single substrate W1.

[0025] As shown in FIG. 2, the substrate bonding system 1B includes surface treatment modules SM12a and SM12b, film formation modules DM12a and DM12b, a bonding module BM12, a heat treatment module AM12, vacuum transfer chambers TM12a and TM12b, and load lock chambers LL12a to LL12e.

[0026] The surface treatment module SM12a, film formation module DM12a, bonding module BM12, and load lock chambers LL12a and LL12b are connected to the vacuum transfer chamber TM12a via gate valves G12a to G12e, respectively. The surface treatment module SM12b, film formation module DM12b, bonding module BM12, and load lock chambers LL12c and LL12d are connected to the vacuum transfer chamber TM12b via gate valves G12f to G12j, respectively. The heat treatment module AM12 is connected to the bonding module BM12 via gate valve G12k, and is connected to the load lock chamber LL12e via gate valve G12l.

[0027] The surface processing modules SM12a and SM12b may have the same configuration as the surface processing module SM11, except that they accommodate one substrate W1 therein and process it.

[0028] The film formation modules DM12a and DM12b may have the same configuration as the film formation module DM11, except that they accommodate and process one substrate W1 therein.

[0029] The bonding module BM12 and the heat treatment module AM12 may have the same configuration as the bonding module BM11 and the heat treatment module AM11, respectively.

[0030] The vacuum transfer chamber TM12a uses a vacuum transfer robot to vacuum transfer the substrate W1 between the surface treatment module SM12a, the film formation module DM12a, the bonding module BM12, and the load lock chambers LL12a and LL12b. The vacuum transfer chamber TM12b uses a vacuum transfer robot to vacuum transfer the substrate W1 between the surface treatment module SM12b, the film formation module DM12b, the bonding module BM12, and the load lock chambers LL12c and LL12d.

[0031] The inside of the load lock chambers LL12a to LL12e can be switched between an atmospheric atmosphere and a vacuum atmosphere. The load lock chambers LL12a to LL12d receive the substrate W1 from outside the substrate bonding system 1B. The load lock chamber LL12e carries out the bonded body W2 to outside the substrate bonding system 1B.

[0032] A third configuration example of the substrate bonding system of the first embodiment will be described with reference to Fig. 3. The substrate bonding system shown in Fig. 3 is an in-line type in which a plurality of processing modules are arranged in series, and is a system in which two substrates are bonded after predetermined processing is performed on the substrates in the plurality of processing modules without exposing the substrates to the atmosphere.

[0033] As shown in FIG. 3, the substrate bonding system 1C includes load lock chambers LL13a and LL13b, a surface treatment module SM13, a film deposition module DM13, a bonding module BM13, a heat treatment module AM13, and the like.

[0034] The load lock chamber LL13a, the surface treatment module SM13, the film formation module DM13, the bonding module BM13, the heat treatment module AM13, and the load lock chamber LL13b are arranged in a line in this order.

[0035] The inside of the load lock chamber LL13a can be switched between an air atmosphere and a vacuum atmosphere. A substrate W1 is carried into the load lock chamber LL13a from outside the substrate bonding system 1C.

[0036] The surface treatment module SM13 is connected to a load lock chamber LL13a via a gate valve G13a. The substrate W1 is vacuum-transferred from the load lock chamber LL13a to the surface treatment module SM13. The surface treatment module SM13 may have the same configuration as the surface treatment module SM11.

[0037] The film formation module DM13 is connected to the surface treatment module SM13 via a gate valve G13b. The substrate W1 is vacuum-transferred from the surface treatment module SM13 to the film formation module DM13. The film formation module DM13 may have the same configuration as the film formation module DM11.

[0038] The bonding module BM13 is connected to the film formation module DM13 via a gate valve G13c. The substrate W1 is vacuum-transferred from the film formation module DM13 to the bonding module BM13. The bonding module BM13 may have the same configuration as the bonding module BM11.

[0039] The heat treatment module AM13 is connected to the bonding module BM13 via a gate valve G13d. The bonded body W2 is vacuum-transferred from the bonding module BM13 to the heat treatment module AM13. The heat treatment module AM13 may have the same configuration as the heat treatment module AM11.

[0040] The load lock chamber LL13b is connected to the heat treatment module AM13 via a gate valve G13e. The bonded body W2 is vacuum-transferred from the heat treatment module AM13 to the load lock chamber LL13b. The interior of the load lock chamber LL13b can be switched between an air atmosphere and a vacuum atmosphere. The load lock chamber LL13b transfers the bonded body W2 that has been heat-treated in the heat treatment module AM13 out of the substrate bonding system 1C.

[0041] A fourth configuration example of the substrate bonding system of the first embodiment will be described with reference to Fig. 4. The substrate bonding system shown in Fig. 4 is an in-line type in which a plurality of processing modules are arranged in series, and is a system in which two substrates are bonded after predetermined processing is performed on the substrates in the plurality of processing modules without exposing the substrates to the atmosphere.

[0042] As shown in FIG. 4, the substrate bonding system 1D includes load lock chambers LL14a to LL14c, surface treatment modules SM14a and SM14b, film deposition modules DM14a and DM14b, a bonding module BM14, a heat treatment module AM14, and the like.

[0043] The load lock chamber LL14a, surface treatment module SM14a, and film formation module DM14a are arranged in a line in this order, and the film formation module DM14a is connected to the bonding module BM 14. The load lock chamber LL14b, surface treatment module SM14b, and film formation module DM14b are arranged in a line in this order, and the film formation module DM14b is connected to the bonding module BM 14. The load lock chamber LL14a, surface treatment module SM14a, and film formation module DM14a are arranged in parallel with the load lock chamber LL14b, surface treatment module SM14b, and film formation module DM14b.

[0044] The inside of the load lock chambers LL14a and LL14b can be switched between an air atmosphere and a vacuum atmosphere. A substrate W1 is carried into the load lock chambers LL14a and LL14b from outside the substrate bonding system 1D.

[0045] The surface treatment modules SM14a and SM14b are connected to the load lock chambers LL14a and LL14b via gate valves G14a and G14b. The substrates W1 are vacuum-transferred from the load lock chambers LL14a and LL14b to the surface treatment modules SM14a and SM14b. The surface treatment modules SM14a and SM14b may have the same configuration as the surface treatment modules SM12a and SM12b.

[0046] The film formation modules DM14a and DM14b are connected to the surface treatment modules SM14a and SM14b via gate valves G14c and G14d. The substrates W1 are vacuum-transferred from the surface treatment modules SM14a and SM14b to the film formation modules DM14a and DM14b. The film formation modules DM14a and DM14b may have the same configuration as the film formation modules DM12a and DM12b.

[0047] The bonding module BM14 is connected to the film formation modules DM14a and DM14b via gate valves G14e and G14f. The substrate W1 is vacuum-transferred to the bonding module BM14 from the film formation modules DM14a and DM14b. The bonding module BM14 may have the same configuration as the bonding module BM12.

[0048] The heat treatment module AM14 is connected to the bonding module BM14 via a gate valve G14g. The bonded body W2 is vacuum-transferred from the bonding module BM14 to the heat treatment module AM14. The heat treatment module AM14 may have the same configuration as the heat treatment module AM12.

[0049] The load lock chamber LL14c is connected to the heat treatment module AM14 via a gate valve G14h. The bonded body W2 is vacuum-transferred to the load lock chamber LL14c from the heat treatment module AM14. The load lock chamber LL14c may have the same configuration as the load lock chamber LL12e.

[0050] (Substrate bonding method) 5A to 5C and 6A to 6C, as an example of the substrate bonding method of the first embodiment, a case where substrates are bonded by the substrate bonding system 1A shown in Fig. 1 will be described. Note that substrates can also be bonded in the same manner by the substrate bonding systems 1B to 1D shown in Figs. 2 to 4.

[0051] First, a substrate 10 is prepared. In this embodiment, as shown in FIG. 5A, the substrate 10 has a conductor layer 11 and an insulating layer 12 on its upper surface. A step is formed between the upper surface of the conductor layer 11 and the upper surface of the insulating layer 12, with the upper surface of the conductor layer 11 protruding from the upper surface of the insulating layer 12. The conductor layer 11 is made of, for example, copper (Cu). The conductor layer 11 may be, for example, a wiring or an electrode pad. The insulating layer 12 is made of, for example, a low-k material. The insulating layer 12 may be, for example, an interlayer insulating film. A corrosion-resistant film (not shown) is formed on the substrate 10 as a protective film, for example, so as to cover at least the upper surface of the conductor layer 11. The corrosion-resistant film is formed by CMP using a polishing slurry containing a corrosion inhibitor such as BTA (benzotriazole). Note that the substrate 10 does not necessarily have to have a protective film formed thereon.

[0052] Next, the atmosphere in the load lock chambers LL11a and LL11b is switched to the air atmosphere. Next, the prepared substrate 10 is loaded into, for example, the load lock chambers LL11a and LL11b. Next, the atmosphere in the load lock chambers LL11a and LL11b containing the substrate 10 is switched from the air atmosphere to a vacuum atmosphere. Next, the gate valves G11e, G11f, and G11a are opened, and the substrate 10 in the load lock chambers LL11a and LL11b is transferred into the surface treatment module SM11 by the vacuum transfer robot in the vacuum transfer chamber TM11, and the gate valves G11e, G11f, and G11a are closed.

[0053] Next, plasma treatment is performed on the surface of the substrate 10. As a result, the upper surface of the conductor layer 11 and the upper surface of the insulating layer 12 are cleaned. In this embodiment, as shown in FIG. 5A, H radicals (H * ), NH radical (NH *) or other radicals are supplied to remove contaminants, natural oxide films, corrosion prevention films, etc. formed on the surface of the substrate 10, thereby exposing the upper surfaces of the conductor layer 11 and the insulating layer 12.

[0054] Subsequently, the gate valves G11a and G11b are opened, and the substrate 10 processed in the surface treatment module SM11 is transferred to the film formation module DM11 by the vacuum transfer robot in the vacuum transfer chamber TM11, and the gate valves G11a and G11b are closed.

[0055] Next, a film formation process is performed on the plasma-treated substrate 10 in the surface treatment module SM11, thereby selectively depositing an insulating film 13 on the cleaned surface of the insulating layer 12. In this embodiment, as shown in FIG. 5B, a process gas such as SiF4, O2, or Ar is supplied to the substrate 10 in the film formation module DM11. Alternatively, the process gas may be activated using a plasma generator. Alternatively, as shown in FIG. 5C, a purge gas such as H2, Ar, or N2 is supplied to the substrate 10 in the film formation module DM11. Alternatively, the purge gas may be activated using a plasma generator. By repeatedly supplying the process gas and the purge gas to the substrate 10 in this manner, an insulating film 13 is selectively deposited on the exposed surface of the insulating layer 12. The insulating film 13 is, for example, SiO2. At this time, the surface shape of the outermost surface of the substrate 10 can be controlled by changing the number of times the process gas and the purge gas are repeatedly supplied. For example, increasing the number of repetitions increases the thickness of the insulating film 13 formed on the exposed surface of the insulating layer 12, thereby reducing the step on the outermost surface of the substrate 10. The number of repetitions is set depending on, for example, the thermal expansion coefficients of the materials constituting the conductor layer 11 and the insulating layer 12, and the temperature of the heat treatment described below.

[0056] Subsequently, the gate valves G11b and G11c are opened, and the substrate 10 processed in the film formation module DM11 is transferred to the bonding module BM11 by the vacuum transfer robot in the vacuum transfer chamber TM11, and the gate valves G11b and G11c are closed.

[0057] Next, the substrates 10 that have been subjected to film formation processing in the film formation module DM11 are bonded together to form a bonded body 10X. In this embodiment, as shown in Fig. 6A, in the bonding module BM11, the conductor layer 11 and the insulating layer 12 (insulating film 13) of one substrate 10 are aligned with the conductor layer 11 and the insulating layer 12 (insulating film 13) of the other substrate 10. After the alignment, the two substrates 10 are bonded together to form a bonded body 10X, as shown in Fig. 6B.

[0058] Subsequently, the gate valves G11c and G11d are opened, and the bonded body 10X bonded in the bonding module BM11 is transferred to the heat treatment module AM11 by the vacuum transfer robot in the vacuum transfer chamber TM11, and the gate valves G11c and G11d are closed.

[0059] Next, the bonded body 10X formed in the bonding module BM11 is heat-treated. In this embodiment, as shown in Fig. 6C, the bonded body 10X is heat-treated in the heat treatment module AM11 to increase the bonding strength of the two substrates 10 constituting the bonded body 10X.

[0060] Next, the gate valves G11d and G11f are opened, and the bonded body 10X that has been heat-treated in the heat treatment module AM11 is transferred to, for example, the load lock chamber LL11b by the vacuum transfer robot in the vacuum transfer chamber TM11, and the gate valves G11d and G11f are closed. Note that the load lock chamber LL11a may be used instead of the load lock chamber LL11b.

[0061] Subsequently, the atmosphere in the load lock chamber LL11b is switched from a vacuum atmosphere to an atmospheric atmosphere, and the bonded body 10X is carried out from the load lock chamber LL11a to the outside of the substrate bonding system 1A.

[0062] According to the first embodiment described above, the upper surface of the conductor layer 11 and the upper surface of the insulating layer 12 are cleaned by performing plasma treatment on the surface of the substrate 10. Then, the insulating film 13 is selectively formed on the cleaned surface of the insulating layer 12 to control the surface shape. Then, with the surface shape controlled, two substrates 10 are bonded together by hybrid bonding, which bonds the conductor layer 11 and the insulating layer 12 (insulating film 13) together, to form a bonded body 10X. This increases the contact area between the conductor layers 11. As a result, contact resistance is reduced and bonding strength is improved. In other words, the conductor layers 11 can be bonded together with high reliability.

[0063] Furthermore, according to the first embodiment, the plasma treatment in the surface treatment module, the selective film formation treatment in the film formation module, and the bonding treatment in the bonding module are performed continuously in this order without exposing the substrate 10 to the atmosphere. This makes it possible to suppress contamination of the substrate 10 between the modules and oxidation of the surface of the conductor layer 11. As a result, the occurrence of minute defects (voids) due to contaminants and oxide films on the bonding surface of the bonded body 10X is suppressed, improving the bonding strength.

[0064] Furthermore, according to the first embodiment, the bonded body 10X is transported from the bonding module to the heat treatment module without being exposed to the atmosphere, and the heat treatment is performed following the bonding treatment, thereby improving productivity and bonding strength compared to when the heat treatment of the bonded body 10X is performed outside the substrate bonding system.

[0065] Second Embodiment (Substrate bonding system) A first configuration example of a substrate bonding system according to the second embodiment will be described with reference to Fig. 7. The substrate bonding system shown in Fig. 7 is a cluster type in which a plurality of processing modules are arranged in a star shape around a vacuum transfer chamber, and the system vacuum-transfers substrates between the various processing modules via the vacuum transfer chamber, performs predetermined processing on the substrates, and then bonds the two substrates together.

[0066] As shown in FIG. 7, the substrate bonding system 2A includes a surface treatment module SM21, a SAM deposition module SDM21, a deposition module DM21, a bonding module BM21, a heat treatment module AM21, a vacuum transfer chamber TM21, and load lock chambers LL21a and LL21b.

[0067] The surface treatment module SM21, SAM deposition module SDM21, deposition module DM21, bonding module BM21, and heat treatment module AM21 are connected to the vacuum transfer chamber TM21 via gate valves G21a to G21e, respectively. The load lock chambers LL21a and LL21b are connected to the vacuum transfer chamber TM21 via gate valves G21f and G21g, respectively.

[0068] The surface treatment module SM21, the bonding module BM21, the heat treatment module AM21, the vacuum transfer chamber TM21, and the load lock chambers LL21a and LL21b may have the same configuration as the surface treatment module SM11, the bonding module BM11, the heat treatment module AM11, the vacuum transfer chamber TM11, and the load lock chambers LL11a and LL11b of the substrate bonding system 1A shown in Figure 1, respectively.

[0069] The interior of the SAM deposition module SDM21 is depressurized to a predetermined vacuum atmosphere. The SAM deposition module SDM21 accommodates, for example, two substrates W1 therein and deposits self-assembled monolayers (SAMs) on the two substrates W1. In this embodiment, the SAM deposition module SDM21 is a module that deposits a SAM on the substrate W1 by, for example, vapor deposition, molecular layer deposition (MLD), or the like. In this embodiment, the SAM is formed from a conductive material. However, the SAM may also be formed from an insulating material.

[0070] The film formation module DM21 is depressurized to a predetermined vacuum atmosphere. The film formation module DM21 accommodates, for example, two substrates W1 and performs film formation processing on the two substrates W1 to selectively form insulating films on predetermined regions of the substrates W1. As such, the film formation module DM21 is also referred to as a selective film formation module, since it is a processing module that selectively forms insulating films on predetermined regions. An example of an insulating film is an aluminum oxide film (Al2O3). The insulating film is formed by, for example, ALD or CVD. Gases used in ALD and CVD include process gases such as Al(CH3)3 and HO, and purge gases such as H2, Ar, and N2. The process gas and purge gas may also be activated using a plasma generation device. Examples of plasma generation devices include a microwave plasma device, an ICP device, a CCP device, and a SWP device.

[0071] A second configuration example of the substrate bonding system of the second embodiment will be described with reference to Figure 8. The substrate bonding system shown in Figure 8 is a cluster type in which multiple processing modules are arranged in a star shape around a vacuum transfer chamber, and is a system in which substrates are vacuum transferred between various processing modules via the vacuum transfer chamber, and the two substrates are bonded after performing predetermined processing on the substrates. In the substrate bonding system shown in Figure 8, each processing module accommodates one substrate W1 and performs various processing on the single substrate W1.

[0072] As shown in FIG. 8, the substrate bonding system 2B includes surface treatment modules SM22a and SM22b, SAM deposition modules SDM22a and SDM22b, deposition modules DM22a and DM22b, a bonding module BM22, a heat treatment module AM22, vacuum transfer chambers TM22a and TM22b, and load lock chambers LL22a to LL22e.

[0073] The surface treatment module SM22a, SAM deposition module SDM22a, deposition module DM22a, bonding module BM22, and load lock chambers LL22a and LL22b are connected to the vacuum transfer chamber TM22a via gate valves G22a to G22f, respectively. The surface treatment module SM22b, SAM deposition module SDM22b, deposition module DM22b, bonding module BM22, and load lock chambers LL22c and LL22d are connected to the vacuum transfer chamber TM22b via gate valves G22g to G22l, respectively. The heat treatment module AM22 is connected to the bonding module BM22 via gate valve G22m, and is connected to the load lock chamber LL22e via gate valve G22n.

[0074] The surface treatment modules SM22a and SM22b may have the same configuration as the surface treatment modules SM12a and SM12b.

[0075] The SAM deposition modules SDM22a and SDM22b may have the same configuration as the SAM deposition module SDM21, except that they accommodate and process one substrate W1 therein.

[0076] The film formation modules DM22a and DM22b may have the same configuration as the film formation modules DM12a and DM12b.

[0077] The bonding module BM22 and the heat treatment module AM22 may have the same configuration as the bonding module BM12 and the heat treatment module AM12, respectively.

[0078] In the vacuum transfer chamber TM22a, a vacuum transfer robot vacuum transfers the substrate W1 between the surface treatment module SM22a, the SAM deposition module SDM22a, the deposition module DM22a, the bonding module BM22, and the load lock chambers LL22a and LL22b. In the vacuum transfer chamber TM22b, a vacuum transfer robot vacuum transfers the substrate W1 between the surface treatment module SM22b, the SAM deposition module SDM22b, the deposition module DM22b, the bonding module BM22, and the load lock chambers LL22c and LL22d.

[0079] The load lock chambers LL22a to LL22e may have the same configuration as the load lock chambers LL12a to LL12e.

[0080] A third configuration example of the substrate bonding system of the second embodiment will be described with reference to Fig. 9. The substrate bonding system shown in Fig. 9 is an in-line type in which a plurality of processing modules are arranged in series, and is a system in which two substrates are bonded after predetermined processing is performed on the substrates in the plurality of processing modules without exposing the substrates to the atmosphere.

[0081] As shown in FIG. 9, the substrate bonding system 2C includes load lock chambers LL23a and LL23b, a surface treatment module SM23, a SAM deposition module SDM23, a deposition module DM23, a bonding module BM23, a heat treatment module AM23, and the like.

[0082] The load lock chamber LL23a, surface treatment module SM23, SAM deposition module SDM23, deposition module DM23, bonding module BM23, heat treatment module AM23, and load lock chamber LL23b are arranged in a line in this order.

[0083] The inside of the load lock chamber LL23a can be switched between an air atmosphere and a vacuum atmosphere. A substrate W1 is carried into the load lock chamber LL23a from outside the substrate bonding system 2C.

[0084] The surface treatment module SM23 is connected to the load lock chamber LL23a via a gate valve G23a. The substrate W1 is vacuum-transferred from the load lock chamber LL23a to the surface treatment module SM23. The surface treatment module SM23 may have the same configuration as the surface treatment module SM21.

[0085] The SAM deposition module SDM23 is connected to the surface treatment module SM23 via a gate valve G23b. The substrate W1 is vacuum-transferred from the surface treatment module SM23 to the SAM deposition module SDM23. The SAM deposition module SDM23 may have the same configuration as the SAM deposition module SDM21.

[0086] The film formation module DM23 is connected to the SAM film formation module SDM23 via a gate valve G23c. The substrate W1 is vacuum-transferred from the SAM film formation module SDM23 to the film formation module DM23. The film formation module DM23 may have the same configuration as the film formation module DM21.

[0087] The bonding module BM23 is connected to the film formation module DM23 via a gate valve G23d. The substrate W1 is vacuum-transferred from the film formation module DM23 to the bonding module BM23. The bonding module BM23 may have the same configuration as the bonding module BM21.

[0088] The heat treatment module AM23 is connected to the bonding module BM23 via a gate valve G23e. The bonded body W2 is vacuum-transferred from the bonding module BM23 to the heat treatment module AM23. The heat treatment module AM23 may have the same configuration as the heat treatment module AM21.

[0089] The load lock chamber LL23b is connected to the heat treatment module AM23 via a gate valve G23f. The bonded body W2 is vacuum-transferred from the heat treatment module AM23 to the load lock chamber LL23b. The interior of the load lock chamber LL23b can be switched between an air atmosphere and a vacuum atmosphere. The load lock chamber LL23b transfers the bonded body W2 that has been heat-treated in the heat treatment module AM23 out of the substrate bonding system 2C.

[0090] A fourth configuration example of the substrate bonding system of the second embodiment will be described with reference to Fig. 10. The substrate bonding system shown in Fig. 10 is an in-line type in which a plurality of processing modules are arranged in series, and is a system in which two substrates are bonded after undergoing predetermined processing on the substrates in the plurality of processing modules without exposing the substrates to the atmosphere.

[0091] As shown in FIG. 10, the substrate bonding system 2D includes load lock chambers LL24a to LL24c, surface treatment modules SM24a and SM24b, SAM deposition modules SDM24a and SDM24b, deposition modules DM24a and DM24b, a bonding module BM24, and a heat treatment module AM24.

[0092] The load lock chamber LL24a, surface treatment module SM24a, SAM deposition module SDM24a, and deposition module DM24a are arranged in a line in this order, and the deposition module DM24a is connected to the bonding module BM24. The load lock chamber LL24b, surface treatment module SM24b, SAM deposition module SDM24b, and deposition module DM24b are arranged in a line in this order, and the deposition module DM24b is connected to the bonding module BM24. The load lock chamber LL24a, surface treatment module SM24a, SAM deposition module SDM24a, and deposition module DM24a are arranged in parallel with the load lock chamber LL24b, surface treatment module SM24b, SAM deposition module SDM24b, and deposition module DM24b.

[0093] The inside of the load lock chambers LL24a and LL24b can be switched between an atmospheric atmosphere and a vacuum atmosphere. A substrate W1 is carried into the load lock chambers LL24a and LL24b from outside the substrate bonding system 2D.

[0094] The surface treatment modules SM24a and SM24b are connected to the load lock chambers LL24a and LL24b via gate valves G24a and G24b. The substrates W1 are vacuum-transferred from the load lock chambers LL24a and LL24b to the surface treatment modules SM24a and SM24b. The surface treatment modules SM24a and SM24b may have the same configuration as the surface treatment modules SM22a and SM22b.

[0095] The SAM deposition modules SDM24a and SDM24b are connected to the surface treatment modules SM24a and SM24b via gate valves G24c and G24d. Substrates W1 are vacuum-transferred from the surface treatment modules SM24a and SM24b to the SAM deposition modules SDM24a and SDM24b. The SAM deposition modules SDM24a and SDM24b may have the same configuration as the SAM deposition modules SDM22a and SDM22b.

[0096] The deposition modules DM24a and DM24b are connected to the SAM deposition modules SDM24a and SDM24b via gate valves G24e and G24f. Substrates W1 are vacuum-transferred from the SAM deposition modules SDM24a and SDM24b to the deposition modules DM24a and DM24b. The deposition modules DM24a and DM24b may have the same configuration as the deposition modules DM22a and DM22b.

[0097] The bonding module BM24 is connected to the film formation modules DM24a and DM24b via gate valves G24g and G24h. The substrate W1 is vacuum-transferred to the bonding module BM24 from the film formation modules DM24a and DM24b. The bonding module BM24 may have the same configuration as the bonding module BM22.

[0098] The heat treatment module AM24 is connected to the bonding module BM24 via a gate valve G24i. The bonded body W2 is vacuum-transferred from the bonding module BM24 to the heat treatment module AM24. The heat treatment module AM24 may have the same configuration as the heat treatment module AM22.

[0099] The load lock chamber LL24c is connected to the heat treatment module AM24 via a gate valve G24j. The bonded body W2 is vacuum-transferred to the load lock chamber LL24c from the heat treatment module AM24. The load lock chamber LL24c may have the same configuration as the load lock chamber LL22e.

[0100] (Substrate bonding method) 11A to 11B, 12A to 12D, and 13A to 13C, a case where substrates are bonded by substrate bonding system 2A shown in Fig. 7 will be described as an example of the substrate bonding method of the second embodiment. Note that substrates can also be bonded in the same manner by substrate bonding systems 2B to 2D shown in Figs. 8 to 10.

[0101] First, the substrate 20 is prepared. In this embodiment, as shown in FIG. 11A, the substrate 20 has a conductor layer 21 and an insulating layer 22 on its upper surface. A step is formed between the upper surface of the conductor layer 21 and the upper surface of the insulating layer 22, with the upper surface of the conductor layer 21 protruding from the upper surface of the insulating layer 22. The conductor layer 21 is made of, for example, Cu. The conductor layer 21 may be, for example, a wiring or an electrode pad. The insulating layer 22 is made of, for example, a low-k material. The insulating layer 22 may be, for example, an interlayer insulating film. A corrosion-resistant film (not shown) is formed on the substrate 20 as a protective film, for example, so as to cover at least the upper surface of the conductor layer 21. The corrosion-resistant film is formed by CMP using a polishing slurry containing a corrosion inhibitor such as BTA. Note that the substrate 20 does not necessarily have to have a protective film formed thereon.

[0102] Next, the atmosphere in the load lock chambers LL21a and LL21b is switched to the air atmosphere. Next, the prepared substrate 20 is loaded into, for example, the load lock chambers LL21a and LL21b. Next, the atmosphere in the load lock chambers LL21a and LL21b containing the substrate 20 is switched from the air atmosphere to a vacuum atmosphere. Next, the gate valves G21f, G21g, and G21a are opened, and the substrate 20 in the load lock chambers LL21a and LL21b is transferred into the surface treatment module SM21 by the vacuum transfer robot in the vacuum transfer chamber TM21, and the gate valves G21f, G21g, and G21a are closed.

[0103] Next, plasma treatment is performed on the surface of the substrate 20. As a result, the upper surface of the conductor layer 21 and the upper surface of the insulating layer 22 are cleaned. In this embodiment, as shown in FIG. 11A, H radicals (H * ), NH radical (NH * ) or other radicals are supplied to remove contaminants, natural oxide films, corrosion prevention films, etc. formed on the surface of the substrate 20, thereby exposing the upper surfaces of the conductor layer 21 and the insulating layer 22.

[0104] Subsequently, the gate valves G21a and G21b are opened, and the substrate 20 processed in the surface treatment module SM21 is transferred to the SAM deposition module SDM21 by the vacuum transfer robot in the vacuum transfer chamber TM21, and the gate valves G21a and G21b are closed.

[0105] Subsequently, a film formation process is performed on the plasma-treated substrate 20 in the surface treatment module SM21, thereby selectively forming a SAM 23 on the cleaned surface of the conductor layer 21. In this embodiment, as shown in Fig. 11B, a process gas is supplied to the substrate 20 in the SAM formation module SDM21, thereby selectively forming a SAM 23 on the exposed surface of the conductor layer 21.

[0106] Subsequently, the gate valves G21b and G21c are opened, and the substrate 20 processed in the SAM deposition module SDM21 is transferred to the deposition module DM21 by the vacuum transfer robot in the vacuum transfer chamber TM11, and the gate valves G21b and G21c are closed.

[0107] Next, a film formation process is performed on the substrate 20 on which the SAM 23 has been formed in the SAM formation module SDM21, thereby selectively forming an insulating film 24 on the cleaned surface of the insulating layer 22. In this embodiment, as shown in FIG. 12A, a process gas such as HO or O is supplied to the substrate 20 in the film formation module DM21. The film formation module DM21 is then evacuated to a vacuum. As a result, as shown in FIG. 12B, hydroxyl (OH) groups are adsorbed on the upper surface of the insulating layer 22. As shown in FIG. 12C, a process gas such as Al(CH3)3 is supplied to the substrate 20. The process gas may be activated using a plasma generation device. As shown in FIG. 12D, a purge gas such as H2, Ar, or N2 is supplied to the substrate 20. The purge gas may be activated using a plasma generation device. By repeatedly supplying the process gas and the purge gas to the substrate 20 in this manner, an insulating film 24 is selectively formed on the exposed surface of the insulating layer 22, and SAM 23 is desorbed from the exposed surface of the conductor layer 21. The insulating film 24 is, for example, an Al2O3 film. At this time, the surface shape of the outermost surface of the substrate 20 can be controlled by changing the number of times the process gas and the purge gas are repeatedly supplied. For example, by increasing the number of times the supply of the process gas and the purge gas is repeated, the thickness of the insulating film 24 formed on the exposed surface of the insulating layer 22 increases, and the step on the outermost surface of the substrate 20 decreases. The number of times the supply of the process gas and the purge gas is repeated is set depending on, for example, the thermal expansion coefficients of the materials constituting the conductor layer 21 and the insulating layer 22, and the temperature of the heat treatment described below.

[0108] Subsequently, the gate valves G21c and G21d are opened, and the substrate 20 processed in the film formation module DM21 is transferred to the bonding module BM21 by the vacuum transfer robot in the vacuum transfer chamber TM21, and the gate valves G21c and G21d are closed.

[0109] Next, the substrates 20 that have been subjected to the film formation process in the film formation module DM21 are bonded together to form a bonded body 20X. In this embodiment, as shown in Fig. 13A, in the bonding module BM21, the conductor layer 21 and the insulating layer 22 (insulating film 24) of one substrate 20 are aligned with the conductor layer 21 and the insulating layer 22 (insulating film 24) of the other substrate 20. After the alignment, the two substrates 20 are bonded together to form a bonded body 20X, as shown in Fig. 13B.

[0110] Subsequently, the gate valves G21d and G21e are opened, and the bonded body 20X bonded in the bonding module BM21 is transferred to the heat treatment module AM21 by the vacuum transfer robot in the vacuum transfer chamber TM21, and the gate valves G21d and G21e are closed.

[0111] Next, the bonded body 20X formed in the bonding module BM21 is heat-treated. In this embodiment, as shown in Fig. 13C, the bonded body 20X is heat-treated in the heat treatment module AM21 to increase the bonding strength of the two substrates 20 constituting the bonded body 20X.

[0112] Next, the gate valves G21e and G21g are opened, and the bonded body 20X that has been heat-treated in the heat treatment module AM21 is transferred to, for example, the load lock chamber LL21b by the vacuum transfer robot in the vacuum transfer chamber TM21, and the gate valves G21e and G21g are closed. Note that the load lock chamber LL21a may be used instead of the load lock chamber LL21b.

[0113] Subsequently, the atmosphere in the load lock chamber LL21b is switched from a vacuum atmosphere to an atmospheric atmosphere, and the bonded body 20X is carried out from the load lock chamber LL21a to the outside of the substrate bonding system 2A.

[0114] According to the second embodiment described above, the upper surface of the conductor layer 21 and the upper surface of the insulating layer 22 are cleaned by performing plasma treatment on the surface of the substrate 20. Then, the insulating film 24 is selectively formed on the cleaned surface of the insulating layer 22 to control the surface shape. Then, with the surface shape controlled, two substrates 20 are bonded together by hybrid bonding, which bonds the conductor layer 21 and the insulating layer 22 (insulating film 24) together, to form a bonded body 20X. This increases the contact area between the conductor layers 21. As a result, contact resistance is reduced and bonding strength is improved. That is, the conductor layers 21 can be bonded together with high reliability.

[0115] Furthermore, according to the second embodiment, the plasma treatment in the surface treatment module, the film formation treatment in the SAM film formation module, the film formation treatment in the film formation module, and the bonding treatment in the bonding module are performed consecutively in this order without exposing the substrate 20 to the atmosphere. This makes it possible to suppress contamination of the substrate 20 between the modules and oxidation of the surface of the conductor layer 21. As a result, the occurrence of minute defects (voids) due to contaminants and oxide films on the bonding surface of the bonded body 20X is suppressed, improving the bonding strength.

[0116] Furthermore, according to the second embodiment, the bonded body 20X is transported from the bonding module to the heat treatment module without being exposed to the atmosphere, and the heat treatment is performed following the bonding treatment, thereby improving productivity and bonding strength compared to when the heat treatment of the bonded body 20X is performed outside the substrate bonding system.

[0117] Third Embodiment (Substrate bonding system) A first configuration example of a substrate bonding system according to the third embodiment will be described with reference to Fig. 14. The substrate bonding system shown in Fig. 14 is a cluster type in which a plurality of processing modules are arranged in a star shape around a vacuum transfer chamber, and the system vacuum-transfers substrates between the various processing modules via the vacuum transfer chamber, performs predetermined processing on the substrates, and then bonds the two substrates together.

[0118] As shown in FIG. 14, the substrate bonding system 3A includes a surface treatment module SM31, a film formation module DM31, a bonding module BM31, a heat treatment module AM31, a vacuum transfer chamber TM31, and load lock chambers LL31a and LL31b.

[0119] The surface treatment module SM31, film formation module DM31, bonding module BM31, and heat treatment module AM31 are connected to the vacuum transfer chamber TM31 via gate valves G31a to G31d, respectively. The load lock chambers LL31a and LL31b are connected to the vacuum transfer chamber TM31 via gate valves G31e and G31f, respectively.

[0120] The surface treatment module SM31, the bonding module BM31, the heat treatment module AM31, the vacuum transfer chamber TM31, and the load lock chambers LL31a and LL31b may have the same configuration as the surface treatment module SM11, the bonding module BM11, the heat treatment module AM11, the vacuum transfer chamber TM11, and the load lock chambers LL11a and LL11b of the substrate bonding system 1A shown in Figure 1, respectively.

[0121] The film formation module DM31 is depressurized to a predetermined vacuum atmosphere. The film formation module DM31 accommodates, for example, two substrates W1 and performs film formation processing on the two substrates W1 to selectively form metal films on predetermined regions of the substrates W1. As such, the film formation module DM11 is also referred to as a selective film formation module, since it is a processing module that selectively forms metal films on predetermined regions. Examples of metal films include platinum (Pt). Metal films are formed by, for example, ALD or CVD. Gases used in ALD and CVD include process gases such as (CH3C5H4)Pt(CH3)3, O2, and N2, and purge gases such as N2. The process gas and purge gas may also be activated using a plasma generation device. Examples of plasma generation devices include a microwave plasma device, an ICP device, a CCP device, and a SWP device.

[0122] A second configuration example of the substrate bonding system of the third embodiment will be described with reference to Fig. 15. The substrate bonding system shown in Fig. 15 is a cluster type in which multiple processing modules are arranged in a star shape around a vacuum transfer chamber, and is a system in which substrates are vacuum transferred between various processing modules via the vacuum transfer chamber, and two substrates are bonded after the substrates are subjected to a predetermined processing.

[0123] As shown in FIG. 15, the substrate bonding system 3B includes surface treatment modules SM32a and SM32b, film formation modules DM32a and DM32b, a bonding module BM32, a heat treatment module AM32, vacuum transfer chambers TM32a and TM32b, and load lock chambers LL32a to LL32e.

[0124] The surface treatment module SM32a, film formation module DM32a, bonding module BM32, and load lock chambers LL32a and LL32b are connected to the vacuum transfer chamber TM32a via gate valves G32a to G32e, respectively. The surface treatment module SM32b, film formation module DM32b, bonding module BM32, and load lock chambers LL32c and LL32d are connected to the vacuum transfer chamber TM32b via gate valves G32f to G32j, respectively. The heat treatment module AM32 is connected to the bonding module BM32 via gate valve G32k, and is connected to the load lock chamber LL32e via gate valve G32l.

[0125] The surface treatment modules SM32a, SM32b, DM32b, bonding module BM32, heat treatment module AM32, vacuum transfer chambers TM32a, TM32b, and load lock chambers LL32a to LL32e may have the same configuration as the surface treatment modules SM12a, SM12b, bonding module BM12, heat treatment module AM12, vacuum transfer chambers TM12a, TM12b, and load lock chambers LL12a to LL12e of the substrate bonding system 1B shown in FIG. 1, respectively.

[0126] The film formation modules DM32a and DM32b may have the same configuration as the film formation module DM31.

[0127] A third configuration example of the substrate bonding system of the third embodiment will be described with reference to Fig. 16. The substrate bonding system shown in Fig. 16 is an in-line type in which a plurality of processing modules are arranged in series, and is a system in which two substrates are bonded after predetermined processing is performed on the substrates in the plurality of processing modules without exposing the substrates to the atmosphere.

[0128] As shown in FIG. 16, the substrate bonding system 3C includes load lock chambers LL33a and LL33b, a surface treatment module SM33, a film deposition module DM33, a bonding module BM33, a heat treatment module AM33, and the like.

[0129] The load lock chamber LL33a, the surface treatment module SM33, the film formation module DM33, the bonding module BM33, the heat treatment module AM33 and the load lock chamber LL33b are arranged in a line in this order.

[0130] The inside of the load lock chamber LL33a can be switched between an air atmosphere and a vacuum atmosphere. A substrate W1 is carried into the load lock chamber LL33a from outside the substrate bonding system 3C.

[0131] The surface treatment module SM33 is connected to the load lock chamber LL33a via a gate valve G33a. The substrate W1 is vacuum-transferred from the load lock chamber LL33a to the surface treatment module SM33. The surface treatment module SM33 may have the same configuration as the surface treatment module SM31.

[0132] The film formation module DM33 is connected to the surface treatment module SM33 via a gate valve G33b. The substrate W1 is vacuum-transferred from the surface treatment module SM33 to the film formation module DM33. The film formation module DM33 may have the same configuration as the film formation module DM31.

[0133] The bonding module BM33 is connected to the film formation module DM33 via a gate valve G33c. The substrate W1 is vacuum-transferred from the film formation module DM33 to the bonding module BM33. The bonding module BM33 may have the same configuration as the bonding module BM31.

[0134] The heat treatment module AM33 is connected to the bonding module BM33 via a gate valve G23d. The bonded body W2 is vacuum-transferred from the bonding module BM33 to the heat treatment module AM33. The heat treatment module AM33 may have the same configuration as the heat treatment module AM31.

[0135] The load lock chamber LL33b is connected to the heat treatment module AM33 via a gate valve G33e. The bonded body W2 is vacuum-transferred from the heat treatment module AM33 to the load lock chamber LL33b. The interior of the load lock chamber LL33b can be switched between an air atmosphere and a vacuum atmosphere. The load lock chamber LL33b transfers the bonded body W2 that has been heat-treated in the heat treatment module AM33 out of the substrate bonding system 3C.

[0136] A fourth configuration example of the substrate bonding system of the third embodiment will be described with reference to Fig. 17. The substrate bonding system shown in Fig. 17 is an in-line type in which a plurality of processing modules are arranged in series, and is a system in which two substrates are bonded after predetermined processing is performed on the substrates in the plurality of processing modules without exposing the substrates to the atmosphere.

[0137] As shown in FIG. 17, the substrate bonding system 3D includes load lock chambers LL34a to LL34c, surface treatment modules SM34a and SM34b, film deposition modules DM34a and DM34b, a bonding module BM34, a heat treatment module AM34, and the like.

[0138] The load lock chamber LL34a, surface treatment module SM34a, and film formation module DM34a are arranged in a line in this order, and the film formation module DM34a is connected to the bonding module BM 34. The load lock chamber LL34b, surface treatment module SM34b, and film formation module DM34b are arranged in a line in this order, and the film formation module DM34b is connected to the bonding module BM 34. The load lock chamber LL34a, surface treatment module SM34a, and film formation module DM34a are arranged in parallel with the load lock chamber LL34b, surface treatment module SM34b, and film formation module DM34b.

[0139] The inside of the load lock chambers LL34a and LL34b can be switched between an air atmosphere and a vacuum atmosphere. A substrate W1 is carried into the load lock chambers LL34a and LL34b from outside the substrate bonding system 3D.

[0140] The surface treatment modules SM34a and SM34b are connected to the load lock chambers LL34a and LL34b via gate valves G34a and G34b. The substrates W1 are vacuum-transferred from the load lock chambers LL34a and LL34b to the surface treatment modules SM34a and SM34b. The surface treatment modules SM34a and SM34b may have the same configuration as the surface treatment modules SM32a and SM32b.

[0141] The film formation modules DM34a and DM34b are connected to the surface treatment modules SM34a and SM34b via gate valves G34c and G34d. The substrates W1 are vacuum-transferred from the surface treatment modules SM34a and SM34b to the film formation modules DM34a and DM34b. The film formation modules DM34a and DM34b may have the same configuration as the film formation modules DM32a and DM32b.

[0142] The bonding module BM34 is connected to the film formation modules DM34a and DM34b via gate valves G34e and G34f. The substrate W1 is vacuum-transferred to the bonding module BM34 from the film formation modules DM34a and DM34b. The bonding module BM34 may have the same configuration as the bonding module BM32.

[0143] The heat treatment module AM34 is connected to the bonding module BM34 via a gate valve G34g. The bonded body W2 is vacuum-transferred from the bonding module BM34 to the heat treatment module AM34. The heat treatment module AM34 may have the same configuration as the heat treatment module AM32.

[0144] The load lock chamber LL34c is connected to the heat treatment module AM34 via a gate valve G34h. The bonded body W2 is vacuum-transferred to the load lock chamber LL34c from the heat treatment module AM34. The load lock chamber LL34c may have the same configuration as the load lock chamber LL32e.

[0145] (Substrate bonding method) 18, 19A to 19E, and 20A to 20C, a case where substrates are bonded by substrate bonding system 3A shown in Fig. 14 will be described as an example of the substrate bonding method of the third embodiment. Note that substrates can also be bonded in the same manner by substrate bonding systems 3B to 3D shown in Figs. 15 to 17.

[0146] First, a substrate 30 is prepared. In this embodiment, as shown in FIG. 18 , the substrate 30 has a conductor layer 31 and an insulating layer 32 on its upper surface. A step is formed between the upper surface of the conductor layer 31 and the upper surface of the insulating layer 32, where the upper surface of the conductor layer 31 is recessed relative to the upper surface of the insulating layer 32. The conductor layer 31 is formed of, for example, Cu. The conductor layer 31 may be, for example, a wiring or an electrode pad. The insulating layer 32 is formed of, for example, a low-k material. The insulating layer 32 may be, for example, an interlayer insulating film. A corrosion-resistant film (not shown) is formed on the substrate 30 as a protective film, for example, so as to cover at least the upper surface of the conductor layer 31. The corrosion-resistant film is formed by CMP using a polishing slurry containing a corrosion inhibitor such as BTA. Note that the substrate 30 does not necessarily have to have a protective film formed thereon.

[0147] Next, the atmosphere in the load lock chambers LL31a and LL31b is switched to the air atmosphere. Next, the prepared substrate 30 is loaded into, for example, the load lock chambers LL31a and LL31b. Next, the atmosphere in the load lock chambers LL31a and LL31b containing the substrate 30 is switched from the air atmosphere to a vacuum atmosphere. Next, the gate valves G31e, G31f, and G31a are opened, and the substrate 30 in the load lock chambers LL31a and LL31b is transferred into the surface treatment module SM31 by the vacuum transfer robot in the vacuum transfer chamber TM31, and the gate valves G31e, G31f, and G31a are closed.

[0148] Next, plasma treatment is performed on the surface of the substrate 30. As a result, the upper surface of the conductor layer 31 and the upper surface of the insulating layer 32 are cleaned. In this embodiment, as shown in FIG. 18, H radicals (H * ), NH radical (NH * ) to remove contaminants, natural oxide films, corrosion prevention films, etc. formed on the surface of the substrate 30, thereby exposing the upper surfaces of the conductor layer 31 and the insulating layer 32.

[0149] Subsequently, the gate valves G31a and G31b are opened, and the substrate 30 processed in the surface treatment module SM31 is transferred to the film formation module DM31 by the vacuum transfer robot in the vacuum transfer chamber TM31, and the gate valves G31a and G31b are closed.

[0150] Next, a film formation process is performed on the plasma-treated substrate 30 in the surface treatment module SM31, thereby selectively forming a metal film 33 on the cleaned surface of the conductor layer 31. In this embodiment, as shown in FIG. 19A, a process gas such as O2 is supplied to the substrate 30 in the film formation module DM31. Alternatively, the process gas may be activated using a plasma generating device. As shown in FIG. 19B, a process gas such as N2 is supplied to the substrate 30 in the film formation module DM31. As shown in FIG. 19C, a process gas such as (CH3C5H4)Pt(CH3)3 is supplied to the substrate 30 in the film formation module DM31. As shown in FIG. 19D, a process gas such as N2 gas is supplied to the substrate 30 in the film formation module DM31. As shown in FIG. 19E, a purge gas such as N2 gas is supplied to the substrate 30 in the film formation module DM31 to remove residual gas near the surface of the substrate 30. By repeatedly supplying the process gas and the purge gas to the substrate 30 in this manner, a metal film 33 is selectively formed on the exposed surface of the insulating layer 32. The metal film 33 is, for example, Pt. At this time, the surface shape of the outermost surface of the substrate 30 can be controlled by changing the number of times the process gas and the purge gas are repeatedly supplied. For example, by increasing the number of times the process gas and the purge gas are supplied, the thickness of the metal film 33 formed on the exposed surface of the conductor layer 31 increases, and the step on the outermost surface of the substrate 30 decreases. The number of times the process gas is supplied is set depending on, for example, the thermal expansion coefficient of the material constituting the conductor layer 31, the thermal expansion coefficient of the material constituting the insulating layer 32, and the temperature of the heat treatment described below.

[0151] Subsequently, the gate valves G31b and G31c are opened, and the substrate 30 processed in the film formation module DM31 is transferred to the bonding module BM31 by the vacuum transfer robot in the vacuum transfer chamber TM31, and the gate valves G31b and G31c are closed.

[0152] Next, the substrates 30 that have been subjected to the film formation process in the film formation module DM31 are bonded together to form a bonded body 30X. In this embodiment, as shown in Fig. 20A, in the bonding module BM31, the conductor layer 31 (metal film 33) and insulating layer 32 of one substrate 30 are aligned with the conductor layer 31 (metal film 33) and insulating layer 32 of the other substrate 30. After the alignment, the two substrates 30 are bonded together to form a bonded body 30X, as shown in Fig. 20B.

[0153] Subsequently, the gate valves G31c and G31d are opened, and the bonded body 30X bonded in the bonding module BM31 is transferred to the heat treatment module AM31 by the vacuum transfer robot in the vacuum transfer chamber TM31, and the gate valves G31c and G31d are closed.

[0154] Next, the bonded body 30X formed in the bonding module BM31 is heat-treated. In this embodiment, as shown in Fig. 20C, the bonded body 30X is heat-treated in the heat treatment module AM31 to increase the bonding strength of the two substrates 30 constituting the bonded body 30X.

[0155] Next, the gate valves G31d and G31f are opened, and the bonded body 30X that has been heat-treated in the heat treatment module AM31 is transferred to, for example, the load lock chamber LL31b by the vacuum transfer robot in the vacuum transfer chamber TM31, and the gate valves G31d and G31f are closed. Note that the load lock chamber LL31a may be used instead of the load lock chamber LL31b.

[0156] Subsequently, the atmosphere in the load lock chamber LL31b is switched from a vacuum atmosphere to an atmospheric atmosphere, and the bonded body 30X is carried out from the load lock chamber LL31a to the outside of the substrate bonding system 3A.

[0157] According to the third embodiment described above, the upper surface of the conductor layer 31 and the upper surface of the insulating layer 32 are cleaned by performing plasma treatment on the surface of the substrate 30. Then, a metal film 33 is selectively formed on the cleaned surface of the conductor layer 31 to control the surface shape. Then, with the surface shape controlled, two substrates 30 are bonded together by hybrid bonding, which bonds the conductor layer 31 (metal film 33) and the insulating layer 32 together, to form a bonded body 30X. This increases the contact area between the conductor layers 31. As a result, contact resistance is reduced and bonding strength is improved. In other words, the conductor layers 31 can be bonded together with high reliability.

[0158] Furthermore, according to the third embodiment, the plasma treatment in the surface treatment module, the selective film formation treatment in the film formation module, and the bonding treatment in the bonding module are performed consecutively in this order without exposing the substrate 30 to the atmosphere. This makes it possible to suppress contamination of the substrate 30 between the modules and oxidation of the surface of the conductor layer 31. As a result, the occurrence of minute defects (voids) due to contaminants or oxide films on the bonding surface of the bonded body 30X is suppressed, improving the bonding strength.

[0159] Furthermore, according to the third embodiment, the bonded body 30X is transported from the bonding module to the heat treatment module without being exposed to the atmosphere, and the heat treatment is performed following the bonding treatment, thereby improving productivity and bonding strength compared to when the heat treatment of the bonded body 30X is performed outside the substrate bonding system.

[0160] [Fourth embodiment] (Substrate bonding system) A first configuration example of a substrate bonding system according to the fourth embodiment will be described with reference to Fig. 21. The substrate bonding system shown in Fig. 21 is a cluster type in which a plurality of processing modules are arranged in a star shape around a vacuum transfer chamber, and is a system in which substrates are vacuum-transferred between the various processing modules via the vacuum transfer chamber, and two substrates are bonded together after the substrates have been subjected to a predetermined process.

[0161] As shown in FIG. 21, the substrate bonding system 4A includes a surface treatment module SM41, a SAM deposition module SDM41, a deposition module DM41, a bonding module BM41, a heat treatment module AM41, a vacuum transfer chamber TM41, and load lock chambers LL41a and LL41b.

[0162] The surface treatment module SM41, SAM deposition module SDM41, deposition module DM41, bonding module BM41, and heat treatment module AM41 are connected to the vacuum transfer chamber TM41 via gate valves G41a to G41e, respectively. The load lock chambers LL41a and LL41b are connected to the vacuum transfer chamber TM41 via gate valves G41f and G41g, respectively.

[0163] The surface treatment module SM41, the bonding module BM41, the heat treatment module AM41, the vacuum transfer chamber TM41, and the load lock chambers LL41a and LL41b may have the same configuration as the surface treatment module SM11, the bonding module BM11, the heat treatment module AM11, the vacuum transfer chamber TM11, and the load lock chambers LL11a and LL11b of the substrate bonding system 1A shown in Figure 1, respectively.

[0164] The inside of the SAM deposition module SDM41 is depressurized to a predetermined vacuum atmosphere. The SAM deposition module SDM41 accommodates, for example, two substrates W1 inside and deposits SAM on the two substrates W1. In this embodiment, the SAM deposition module SDM41 is a module that deposits SAM on the substrate W1 by, for example, evaporation, MLD, or the like. Gases used in MLD include, for example, N,N-Dimethyltrimethylsilylamine (CH 15 In this embodiment, the SAM is made of an insulating material.

[0165] The film formation module DM41 is depressurized to a predetermined vacuum atmosphere. The film formation module DM41 accommodates, for example, two substrates W1 and performs film formation processing on the two substrates W1 to selectively form metal films on predetermined regions of the substrates W1. Since the film formation module DM41 is a processing module that selectively forms metal films on predetermined regions, it is also referred to as a selective film formation module. Examples of metal films include manganese (Mn). Insulating films are formed by, for example, ALD or CVD. Examples of gases used in ALD and CVD include process gases such as Bis(N,N-diisopropylpentylamidinato) manganese (II), H, and NH, and purge gases such as H, NH, Ar, and N. The process gas and purge gas may be activated using a plasma generation device. Examples of plasma generation devices include a microwave plasma device, an ICP device, a CCP device, and a SWP device.

[0166] A second configuration example of the substrate bonding system of the fourth embodiment will be described with reference to Figure 22. The substrate bonding system shown in Figure 22 is a cluster type in which multiple processing modules are arranged in a star shape around a vacuum transfer chamber, and is a system in which substrates are vacuum transferred between various processing modules via the vacuum transfer chamber, and the two substrates are bonded after performing predetermined processing on the substrates. In the substrate bonding system shown in Figure 22, each processing module accommodates one substrate W1 and performs various processing on the single substrate W1.

[0167] As shown in FIG. 22, the substrate bonding system 4B includes surface treatment modules SM42a and SM42b, SAM deposition modules SDM42a and SDM42b, deposition modules DM42a and DM42b, a bonding module BM42, a heat treatment module AM42, vacuum transfer chambers TM42a and TM42b, and load lock chambers LL42a to LL42e.

[0168] The surface treatment module SM42a, SAM deposition module SDM42a, deposition module DM42a, bonding module BM42, and load lock chambers LL42a and LL42b are connected to the vacuum transfer chamber TM42a via gate valves G42a to G42f, respectively. The surface treatment module SM42b, SAM deposition module SDM42b, deposition module DM42b, bonding module BM42, and load lock chambers LL42c and LL42d are connected to the vacuum transfer chamber TM42b via gate valves G42g to G42l, respectively. The heat treatment module AM42 is connected to the bonding module BM42 via gate valve G42m, and is connected to the load lock chamber LL42e via gate valve G42n.

[0169] The surface treatment modules SM42a and SM42b may have the same configuration as the surface treatment module SM41, except that they accommodate one substrate W1 therein and treat it.

[0170] The SAM deposition modules SDM42a and SDM42b may have the same configuration as the SAM deposition module SDM41, except that they accommodate and process one substrate W1 therein.

[0171] The film forming modules DM42a and DM42b may have the same configuration as the film forming module DM41, except that they accommodate and process one substrate W1 therein.

[0172] The bonding module BM42 and the heat treatment module AM42 may have the same configuration as the bonding module BM41 and the heat treatment module AM41, respectively.

[0173] In the vacuum transfer chamber TM42a, a vacuum transfer robot vacuum transfers the substrate W1 between the surface treatment module SM42a, the SAM deposition module SDM42a, the deposition module DM42a, the bonding module BM42, and the load lock chambers LL42a and LL42b. In the vacuum transfer chamber TM42b, a vacuum transfer robot vacuum transfers the substrate W1 between the surface treatment module SM42b, the SAM deposition module SDM42b, the deposition module DM42b, the bonding module BM42, and the load lock chambers LL42c and LL42d.

[0174] The load lock chambers LL42a to LL42d may have the same configuration as the load lock chambers LL41a to LL41b.

[0175] The load lock chamber LL42e can be switched between an air atmosphere and a vacuum atmosphere. The load lock chamber LL42e carries the bonded body W2 out of the substrate bonding system 4B.

[0176] A third configuration example of the substrate bonding system of the fourth embodiment will be described with reference to Fig. 23. The substrate bonding system shown in Fig. 23 is an in-line type in which a plurality of processing modules are arranged in series, and is a system in which two substrates are bonded after predetermined processing is performed on the substrates in the plurality of processing modules without exposing the substrates to the atmosphere.

[0177] As shown in FIG. 23, the substrate bonding system 4C includes load lock chambers LL43a and LL43b, a surface treatment module SM43, a SAM deposition module SDM43, a deposition module DM43, a bonding module BM43, a heat treatment module AM43, and the like.

[0178] The load lock chamber LL43a, surface treatment module SM43, SAM deposition module SDM43, deposition module DM43, bonding module BM43, heat treatment module AM43 and load lock chamber LL43b are arranged in a line in this order.

[0179] The inside of the load lock chamber LL43a can be switched between an air atmosphere and a vacuum atmosphere. A substrate W1 is carried into the load lock chamber LL43a from outside the substrate bonding system 4C.

[0180] The surface treatment module SM43 is connected to the load lock chamber LL43a via a gate valve G43a. The substrate W1 is vacuum-transferred from the load lock chamber LL43a to the surface treatment module SM43. The surface treatment module SM43 may have the same configuration as the surface treatment module SM41.

[0181] The SAM deposition module SDM43 is connected to the surface treatment module SM43 via a gate valve G43b. The substrate W1 is vacuum-transferred from the surface treatment module SM43 to the SAM deposition module SDM43. The SAM deposition module SDM43 may have the same configuration as the SAM deposition module SDM41.

[0182] The film formation module DM43 is connected to the SAM film formation module SDM43 via a gate valve G43c. The substrate W1 is vacuum-transferred from the SAM film formation module SDM43 to the film formation module DM43. The film formation module DM43 may have the same configuration as the film formation module DM41.

[0183] The bonding module BM43 is connected to the film formation module DM43 via a gate valve G43d. The substrate W1 is vacuum-transferred from the film formation module DM43 to the bonding module BM43. The bonding module BM43 may have the same configuration as the bonding module BM41.

[0184] The heat treatment module AM43 is connected to the bonding module BM43 via a gate valve G43e. The bonded body W2 is vacuum-transferred from the bonding module BM43 to the heat treatment module AM43. The heat treatment module AM43 may have the same configuration as the heat treatment module AM41.

[0185] The load lock chamber LL43b is connected to the heat treatment module AM43 via a gate valve G43f. The bonded body W2 is vacuum-transferred from the heat treatment module AM43 to the load lock chamber LL43b. The interior of the load lock chamber LL43b can be switched between an air atmosphere and a vacuum atmosphere. The load lock chamber LL43b transfers the bonded body W2 that has been heat-treated in the heat treatment module AM43 out of the substrate bonding system 4C.

[0186] A fourth configuration example of the substrate bonding system of the fourth embodiment will be described with reference to Fig. 24. The substrate bonding system shown in Fig. 24 is an in-line type in which a plurality of processing modules are arranged in series, and is a system in which two substrates are bonded after predetermined processing is performed on the substrates in the plurality of processing modules without exposing the substrates to the atmosphere.

[0187] As shown in FIG. 24, the substrate bonding system 4D includes load lock chambers LL44a to LL44c, surface treatment modules SM44a and SM44b, SAM deposition modules SDM44a and SDM44b, deposition modules DM44a and DM44b, a bonding module BM44, a heat treatment module AM44, and the like.

[0188] The load lock chamber LL44a, surface treatment module SM44a, SAM deposition module SDM44a, and deposition module DM44a are arranged in a row in this order, and the deposition module DM44a is connected to the bonding module BM44. The load lock chamber LL44b, surface treatment module SM44b, SAM deposition module SDM44b, and deposition module DM44b are arranged in a row in this order, and the deposition module DM44b is connected to the bonding module BM44. The load lock chamber LL44a, surface treatment module SM44a, SAM deposition module SDM44a, and deposition module DM44a are arranged in parallel with the load lock chamber LL44b, surface treatment module SM44b, SAM deposition module SDM44b, and deposition module DM44b.

[0189] The inside of the load lock chambers LL44a and LL44b can be switched between an atmospheric atmosphere and a vacuum atmosphere. A substrate W1 is carried into the load lock chambers LL44a and LL44b from outside the substrate bonding system 4D.

[0190] The surface treatment modules SM44a and SM44b are connected to the load lock chambers LL44a and LL44b via gate valves G44a and G44b. The substrates W1 are vacuum-transferred from the load lock chambers LL44a and LL44b to the surface treatment modules SM44a and SM44b. The surface treatment modules SM44a and SM44b may have the same configuration as the surface treatment modules SM42a and SM42b.

[0191] The SAM deposition modules SDM44a and SDM44b are connected to the surface treatment modules SM44a and SM44b via gate valves G44c and G44d. Substrates W1 are vacuum-transferred from the surface treatment modules SM44a and SM44b to the SAM deposition modules SDM44a and SDM44b. The SAM deposition modules SDM44a and SDM44b may have the same configuration as the SAM deposition modules SDM42a and SDM42b.

[0192] The deposition modules DM44a and DM44b are connected to the SAM deposition modules SDM44a and SDM44b via gate valves G44e and G44f. Substrates W1 are vacuum-transferred from the SAM deposition modules SDM44a and SDM44b to the deposition modules DM44a and DM44b. The deposition modules DM44a and DM44b may have the same configuration as the deposition modules DM42a and DM42b.

[0193] The bonding module BM44 is connected to the film formation modules DM44a and DM44b via gate valves G44g and G44h. The substrate W1 is vacuum-transferred to the bonding module BM44 from the film formation modules DM44a and DM44b. The bonding module BM44 may have the same configuration as the bonding module BM42.

[0194] The heat treatment module AM44 is connected to the bonding module BM44 via a gate valve G44i. The bonded body W2 is vacuum-transferred from the bonding module BM44 to the heat treatment module AM44. The heat treatment module AM44 may have the same configuration as the heat treatment module AM42.

[0195] The load lock chamber LL44c is connected to the heat treatment module AM44 via a gate valve G44j. The bonded body W2 is vacuum-transferred to the load lock chamber LL44c from the heat treatment module AM44. The load lock chamber LL44c may have the same configuration as the load lock chamber LL42e.

[0196] (Substrate bonding method) 25A to 25B, 26A to 26D, and 27A to 27C, a case where substrates are bonded by substrate bonding system 4A shown in Fig. 21 will be described as an example of the substrate bonding method of the fourth embodiment. Note that substrates can also be bonded in the same manner by substrate bonding systems 4B to 4D shown in Figs. 22 to 24.

[0197] First, a substrate 40 is prepared. In this embodiment, as shown in FIG. 25A, the substrate 40 has a conductor layer 41 and an insulating layer 42 on its upper surface. A step is formed between the upper surface of the conductor layer 41 and the upper surface of the insulating layer 42, where the upper surface of the conductor layer 41 is recessed relative to the upper surface of the insulating layer 42. The conductor layer 41 is formed of, for example, Cu. The conductor layer 41 may be, for example, a wiring or an electrode pad. The insulating layer 42 is formed of, for example, a low-k material. The insulating layer 42 may be, for example, an interlayer insulating film. A corrosion-resistant film (not shown) is formed on the substrate 40 as a protective film, for example, so as to cover at least the upper surface of the conductor layer 41. The corrosion-resistant film is formed by CMP using a polishing slurry containing a corrosion inhibitor such as BTA. Note that the substrate 40 does not necessarily have to have a protective film formed thereon.

[0198] Next, the atmosphere in the load lock chambers LL41a, LL41b is switched to atmospheric air. Next, the prepared substrate 40 is loaded into, for example, the load lock chambers LL41a, LL41b. Next, the atmosphere in the load lock chambers LL41a, LL41b containing the substrate 40 is switched from atmospheric air to a vacuum atmosphere. Next, the gate valves G41f, G41g, G41a are opened, and the substrate 40 in the load lock chambers LL41a, LL41b is transferred into the surface treatment module SM41 by the vacuum transfer robot in the vacuum transfer chamber TM41, and the gate valves G41f, G41g, G41a are closed.

[0199] Next, plasma treatment is performed on the surface of the substrate 40. As a result, the upper surface of the conductor layer 41 and the upper surface of the insulating layer 42 are cleaned. In this embodiment, as shown in FIG. 25A, H radicals (H * ), NH radical (NH * ) to remove contaminants, natural oxide films, corrosion prevention films, etc. formed on the surface of the substrate 40, thereby exposing the upper surfaces of the conductor layer 41 and the insulating layer 42.

[0200] Subsequently, the gate valves G41a and G41b are opened, and the substrate 40 processed in the surface treatment module SM41 is transferred to the SAM deposition module SDM41 by the vacuum transfer robot in the vacuum transfer chamber TM41, and the gate valves G41a and G41b are closed.

[0201] Subsequently, a film formation process is performed on the plasma-treated substrate 40 in the surface treatment module SM41, thereby forming a SAM 43 selectively on the cleaned surface of the insulating layer 42. In this embodiment, as shown in FIG. 25B, in the SAM film formation module SDM41, C5H 15 A processing gas such as NSi is supplied to selectively deposit a SAM 43 on the exposed surface of the insulating layer 42 .

[0202] Subsequently, the gate valves G41b and G41c are opened, and the substrate 40 processed in the SAM deposition module SDM41 is transferred to the deposition module DM41 by the vacuum transfer robot in the vacuum transfer chamber TM11, and the gate valves G41b and G41c are closed.

[0203] Next, in the SAM deposition module SDM41, a film deposition process is performed on the substrate 40 on which the SAM 43 has been deposited, thereby selectively depositing a metal film 44 on the cleaned surface of the conductor layer 41. In this embodiment, as shown in FIG. 26A, a process gas such as H2 or NH3 is supplied to the substrate 40 in the deposition module DM41. The deposition module DM41 is then evacuated to a vacuum. As a result, as shown in FIG. 26B, the upper surface of the conductor layer 41 has H groups adsorbed thereon. As shown in FIG. 26C, Bis(N,N-diisopropylpentylamidinato) manganese (II) [Mn(C 11 H 23 A process gas such as N2)2 is supplied to the substrate 40. As shown in FIG. 26D, a purge gas such as H2, NH3, Ar, or N2 is supplied to the substrate 40. Alternatively, a plasma generator may be used to activate the purge gas. By repeatedly supplying the process gas and the purge gas to the substrate 40 in this manner, a metal film 44 is selectively formed on the exposed surface of the conductor layer 41, and SAM 43 is desorbed from the exposed surface of the insulating layer 42. The metal film 44 is, for example, a Mn film. The surface shape of the outermost surface of the substrate 40 can be controlled by changing the number of times the process gas and the purge gas are repeatedly supplied. For example, increasing the number of times the process gas and the purge gas are repeatedly supplied increases the thickness of the metal film 44 formed on the exposed surface of the conductor layer 41, thereby reducing the step height of the outermost surface of the substrate 40. The number of times the process gas and the purge gas are repeatedly supplied is set according to, for example, the thermal expansion coefficients of the materials constituting the conductor layer 41 and the insulating layer 42, and the temperature of the heat treatment described below.

[0204] Subsequently, the gate valves G41c and G41d are opened, and the substrate 40 processed in the film forming module DM41 is transferred to the bonding module BM41 by the vacuum transfer robot in the vacuum transfer chamber TM41, and the gate valves G41c and G41d are closed.

[0205] Next, the substrates 40 that have been subjected to film formation processing in the film formation module DM41 are bonded together to form a bonded body 40X. In this embodiment, as shown in Fig. 27A, in the bonding module BM41, the conductor layer 41 (metal film 44) and insulating layer 42 of one substrate 40 are aligned with the conductor layer 41 (metal film 44) and insulating layer 42 of the other substrate 40. After the alignment, the two substrates 40 are bonded together to form a bonded body 40X, as shown in Fig. 27B.

[0206] Subsequently, the gate valves G41d and G41e are opened, and the bonded body 40X bonded in the bonding module BM41 is transferred to the heat treatment module AM41 by the vacuum transfer robot in the vacuum transfer chamber TM41, and the gate valves G41d and G41e are closed.

[0207] Next, the bonded body 40X formed in the bonding module BM41 is heat-treated. In this embodiment, as shown in Fig. 27C, the bonded body 40X is heat-treated in the heat treatment module AM41 to increase the bonding strength of the two substrates 40 constituting the bonded body 40X.

[0208] Next, the gate valves G41e and G41g are opened, and the bonded body 40X that has been heat-treated in the heat treatment module AM41 is transferred to, for example, the load lock chamber LL41b by the vacuum transfer robot in the vacuum transfer chamber TM41, and the gate valves G41e and G41g are closed. Note that the load lock chamber LL41a may be used instead of the load lock chamber LL41b.

[0209] Subsequently, the atmosphere in the load lock chamber LL41b is switched from a vacuum atmosphere to an atmospheric atmosphere, and the bonded body 40X is carried out from the load lock chamber LL41a to the outside of the substrate bonding system 2A.

[0210] According to the fourth embodiment described above, the upper surface of the conductor layer 41 and the upper surface of the insulating layer 42 are cleaned by performing plasma treatment on the surface of the substrate 40. Then, a metal film 44 is selectively formed on the cleaned surface of the conductor layer 41 to control the surface shape. Then, with the surface shape controlled, two substrates 40 are bonded together by hybrid bonding, which bonds the conductor layer 41 (metal film 44) and the insulating layer 42 together, to form a bonded body 40X. This increases the contact area between the conductor layers 41. As a result, contact resistance is reduced and bonding strength is improved. In other words, the conductor layers 41 can be bonded together with high reliability.

[0211] Furthermore, according to the fourth embodiment, the plasma treatment in the surface treatment module, the film formation treatment in the SAM film formation module, the film formation treatment in the film formation module, and the bonding treatment in the bonding module are performed successively in this order without exposing the substrate 40 to the atmosphere. This makes it possible to suppress contamination of the substrate 40 between the modules and oxidation of the surface of the conductor layer 41. As a result, the occurrence of minute defects (voids) due to contaminants and oxide films on the bonding surface of the bonded body 40X is suppressed, improving the bonding strength.

[0212] Furthermore, according to the fourth embodiment, the bonded body 40X is transferred from the bonding module to the heat treatment module without being exposed to the atmosphere, and the heat treatment is performed following the bonding treatment, thereby improving productivity and bonding strength compared to when the heat treatment of the bonded body 40X is performed outside the substrate bonding system.

[0213] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0214] In the above embodiment, the substrate is transported between the various processing modules in a vacuum atmosphere, but the present disclosure is not limited to this. For example, the substrate may be transported between the various processing modules in an inert gas atmosphere or an atmosphere with a controlled dew point.

[0215] In the above embodiments, various processing modules are described as being configured to accommodate and process one or two substrates, but the present disclosure is not limited thereto. For example, various processing modules may be configured to accommodate and process three or more substrates. For example, when a processing module accommodates and processes multiple substrates, as shown in FIGS. 28A and 28B, multiple substrates W1 can be arranged horizontally and vertically in multiple tiers, allowing multiple substrates W1 to be processed simultaneously. Note that FIG. 28A is a view of the processing module from above, and FIG. 28B is a view of the processing module from the side. In both cases, walls such as the ceiling wall and side walls are omitted so that the interior of the processing module can be seen.

[0216] In the first embodiment, the insulating film 13 formed on the exposed surface of the insulating layer 12 is made of SiO2, but the present disclosure is not limited to this. For example, combinations of the insulating layer 12 and the insulating film 13 (insulating film 13 / insulating layer 12) include Al2O3 / SiO2, SiOF / SiOC, ZrO2 / SiO2, TiO2 / SiO2, and TiN / SiO2.

[0217] In the second embodiment described above, examples of the SAM 23 deposited on the exposed surface of the conductor layer 21 include alkanethiols [R-SH], amines [R-NH2], phosphonic acids [R-PO(OH)2], carboxylic acids [R-COOH], and alcohols [R-OH].

[0218] In the third embodiment, the metal film 33 formed on the exposed surface of the conductor layer 31 is Pt, but the present disclosure is not limited to this. For example, combinations of the conductor layer 31 and the metal film 33 (metal film 33 / conductor layer 31) include Ni / Cu, Au / Cu, Pd / Cu, and Mn / Cu.

[0219] In the fourth embodiment, examples of the SAM 43 deposited on the exposed surface of the insulating layer 42 include alkylsilane [R-SiH3], alkyltrichlorosilane [R-SiCl3], and silane coupling agent [R-Si(OR)3] when the insulating layer 42 is an oxide film. Also, examples of the SAM 43 deposited on the exposed surface of the insulating layer 42 include alkenes [R-CH=CH2] and alkyl bromides when the insulating layer 42 is a nitride film.

[0220] This international application claims priority to Japanese Patent Application No. 2020-217832, filed on December 25, 2020, the entire contents of which are incorporated herein by reference. [Explanation of symbols]

[0221] 1A~1D, 2A~2D, 3A~3D, 4A~4D substrate bonding system SM Surface Treatment Module DM deposition module BM Joint Module

Claims

1. a surface treatment module for performing plasma treatment on a surface of a substrate; a film formation module connected to the surface treatment module so as to be transportable without exposing the substrate to the atmosphere, and performing a film formation process on the substrate that has been plasma-treated in the surface treatment module; a joining module connected to the film-forming module so as to be transportable without exposing the substrates to the atmosphere, and joining the substrates that have been subjected to film-forming processing in the film-forming module to form a joined body; A substrate bonding system comprising:

2. It is a cluster formula, The substrate bonding system of claim 1 .

3. a vacuum transfer chamber connected to the surface treatment module, the film deposition module, and the bonding module; the substrate is vacuum-transferred between the surface treatment module, the film formation module, and the bonding module via the vacuum transfer chamber; The substrate bonding system of claim 2 .

4. It is an inline expression, The substrate bonding system of claim 1 .

5. the film forming module is a module that forms an insulating film on the substrate; The substrate bonding system of any one of claims 1 to 4.

6. the film formation module is a module that forms a metal film on the substrate; The substrate bonding system of any one of claims 1 to 4.

7. a surface treatment module for performing plasma treatment on a surface of a substrate; a first film formation module connected to the surface treatment module so as to be transportable without exposing the substrate to the atmosphere, and configured to form a self-assembled monolayer (SAM) on the surface of the substrate that has been plasma-treated in the surface treatment module; a second film deposition module connected to the first film deposition module so as to be transportable without exposing the substrate to the atmosphere, and configured to perform a film deposition process on the substrate on which a self-assembled monolayer has been formed in the first film deposition module; a joining module connected to the second film deposition module so as to be transportable without exposing the substrates to the atmosphere, and configured to join the substrates that have been subjected to film deposition processing in the second film deposition module to form a joined body; A substrate bonding system comprising:

8. It is a cluster formula, The substrate bonding system of claim 7 .

9. a vacuum transfer chamber connected to the surface treatment module, the first film deposition module, the second film deposition module, and the bonding module; the substrate is vacuum-transferred among the surface treatment module, the first film deposition module, the second film deposition module, and the bonding module via the vacuum transfer chamber; The substrate bonding system of claim 8 .

10. It is an inline expression, The substrate bonding system of claim 7 .

11. the second film forming module is a module that forms an insulating film on the substrate; 11. The substrate bonding system of any one of claims 7 to 10.

12. the second film forming module is a module that forms a metal film on the substrate; 11. The substrate bonding system of any one of claims 7 to 10.

13. a heat treatment module connected to the bonding module so as to be transportable without exposing the substrate to the atmosphere, and configured to heat-treat the bonded body formed in the bonding module; 13. The substrate bonding system of any one of claims 1 to 12.

14. (a) preparing a first substrate and a second substrate, each of the first substrate and the second substrate having a conductive layer and an insulating layer on a surface thereof; (b) exposing the first substrate and the second substrate to plasma to clean the surfaces of the conductor layer and the insulating layer; (c) selectively forming a film on the cleaned surface of at least one of the conductor layer and the insulating layer of each of the first substrate and the second substrate; (d) joining the conductor layer of the second substrate to the conductor layer of the first substrate to form a bonded body; and Steps (b) to (d) are carried out without exposure to the atmosphere. Board bonding method.

15. (e) further comprising a step of heat treating the bonded body formed in the step (d); The method of claim 14.

16. Steps (b) to (e) are carried out without exposure to the atmosphere. The method for bonding substrates according to claim 14 or 15.

17. The step (c) includes forming an insulating film on the cleaned surface of the insulating layer.

17. The method for bonding substrates according to any one of claims 14 to 16.

18. The step (c) includes a step of forming a self-assembled monolayer (SAM) on the cleaned surface of the conductor layer, and a step of forming an insulating film on the cleaned surface of the insulating layer.

17. The method for bonding substrates according to any one of claims 14 to 16.

19. The step (c) includes a step of forming a metal film on the cleaned surface of the conductor layer.

17. The method for bonding substrates according to any one of claims 14 to 16.

20. The step (c) includes a step of forming a self-assembled monolayer (SAM) on the cleaned surface of the insulating layer, and a step of forming a metal film on the cleaned surface of the conductor layer.

17. The method for bonding substrates according to any one of claims 14 to 16.

21. In each of the first substrate and the second substrate prepared in the step (a), at least the conductor layer is covered with a protective film, In the step (b), the protective film is removed to expose the surface of the conductor layer.

21. The method of bonding substrates according to any one of claims 14 to 20.

22. The upper surface of the conductor layer is protruding or recessed relative to the upper surface of the insulating layer.

22. The method of bonding substrates according to any one of claims 14 to 21.

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