Substrate holding device, substrate processing apparatus, separation method, and article manufacturing method

Abstract

To provide a substrate holding device, a substrate processing device, a separation method, and an article manufacturing method advantageous for preventing wear of a substrate and a holding unit that holds the substrate.SOLUTION: A substrate stage 1 has a substrate chuck 3 that is a holding unit that holds a substrate 2, a gas channel 10 that is a gas supply unit that supplies gas to a space between the substrate and the holding unit, electromagnetic valves 51-53, and regulators 612-63. When the substrate is separated from the holding unit holding the substrate, the gas supply unit performs supply of gas based on information on an adhesive force between the substrate and the holding unit. This prevents sideslip of the substrate due to excessive supply of gas and wear of the chuck due to too little supply of gas.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a substrate holding device, a substrate processing device, a separation method, and an article manufacturing method. [Background technology]

[0002] Substrate processing apparatuses used in the manufacturing processes of semiconductor devices, liquid crystal display devices, etc. may include a substrate chuck (substrate holding unit) that holds a substrate. The smoothness with which the substrate chuck holds and releases the substrate not only affects productivity but also the wear resistance of the substrate and the substrate chuck.

[0003] Patent Document 1 describes that when unloading a substrate from the support table, gas is supplied to a gap between the base surface of the support table and the substrate through gas flow openings formed in the support table. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Special table 2019-505841 publication Summary of the Invention [Problem to be solved by the invention]

[0005] Even when a substrate chuck chucks a substrate and then releases the chuck, an adhesive force still acts between the substrate and the substrate chuck. If the amount of gas supplied when separating the substrate from the substrate chuck is excessive relative to the adhesive force, the substrate will lift off the substrate chuck and slide sideways. On the other hand, if the amount of gas supplied when separating the substrate from the substrate chuck is insufficient relative to the adhesive force, the substrate will not separate from the substrate chuck, causing wear of the substrate chuck. Because the adhesive force depends on the characteristics of the substrate and the substrate chuck, it is preferable that the amount of gas supplied to separate the substrate from the substrate chuck be appropriately set each time depending on the adhesive force.

[0006] The present invention provides an advantageous technique for suppressing wear on a substrate and a holder that holds the substrate. [Means for solving the problem]

[0007] One aspect of the present invention relates to a substrate holding device, the substrate holding device having a holding part that holds a substrate, a gas supply part that supplies gas between the substrate and the holding part, and a control part that controls the gas supply part, and when the substrate is separated from the holding part, the control part controls to reduce the amount of gas supply based on information regarding the adhesive force between the substrate and the holding part, which decreases over time. [Effects of the Invention]

[0008] According to the present invention, it is possible to provide an advantageous technique for suppressing wear on the substrate and the holder that holds it. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 2 is a diagram showing the configuration of a substrate stage. [Figure 2] FIG. 2 is a diagram showing the functional configuration of a control unit. [Figure 3] FIG. [Figure 4] FIG. 4 is a diagram illustrating gas supply control. [Figure 5] FIG. 4 is a diagram illustrating gas supply control. [Figure 6] FIG. 2 is a diagram showing the configuration of a substrate stage. [Figure 7] FIG. [Figure 8] 5A to 5C are diagrams illustrating a substrate transfer operation. [Figure 9] FIG. [Figure 10] 5A to 5C are diagrams illustrating a substrate transfer operation. [Figure 11] FIG. 4 is a diagram showing a drive profile of a fine movement stage. [Figure 12] FIG. 10 is a diagram showing the time progression of the Z deviation of the fine movement stage. [Figure 13] FIG. 10 is a diagram showing the change in pressure over time during gas supply. [Figure 14] FIG. 1 is a schematic diagram showing the configuration of an exposure apparatus. [Figure 15] 10 is a flowchart illustrating a method for separating a substrate from a substrate chuck. [Figure 16] 1 is a flowchart of a method for manufacturing an article. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention claimed. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0011] First Embodiment The present disclosure relates to a substrate processing apparatus for processing a substrate. The substrate processing apparatus may be, for example, a lithography apparatus that forms a pattern on a substrate, such as an exposure apparatus or an imprint apparatus. Alternatively, the substrate processing apparatus may be an inspection apparatus, such as an overlay inspection apparatus, a CD inspection apparatus, a defect inspection apparatus, or an electrical characteristic inspection apparatus. Alternatively, the substrate processing apparatus may be a processing apparatus, such as an etching apparatus or a film formation apparatus. In the following, the substrate processing apparatus in the present disclosure will be described as an exposure apparatus, which is an example of a lithography apparatus.

[0012] FIG. 14 is a schematic diagram of an exposure apparatus 200 in an embodiment. In this specification and drawings, directions are indicated in an XYZ coordinate system in which the horizontal plane is the XY plane. Generally, the substrate 2 is placed on the substrate chuck 3 of the substrate stage 1 so that its surface is parallel to the horizontal plane (XY plane). Therefore, hereinafter, the directions that are perpendicular to each other in a plane along the surface of the substrate 2 are referred to as the X-axis and Y-axis, and the direction perpendicular to the X-axis and Y-axis is referred to as the Z-axis. Furthermore, hereinafter, the directions that are parallel to the X-axis, Y-axis, and Z-axis in the XYZ coordinate system are referred to as the X-direction, Y-direction, and Z-direction, respectively, and the directions of rotation around the X-axis, Y-axis, and Z-axis are referred to as the θX-direction, θY-direction, and θZ-direction, respectively.

[0013] In the exposure apparatus 200, exposure light guided from a light source (not shown) through an illumination optical system 202 is irradiated onto an original 203. The original is also called a reticle or a mask. The exposure light that has passed through the original 203 passes through a projection optical system 206 and is irradiated onto a substrate 2. Materials that can be used for the substrate include, for example, glass, ceramics, metal, semiconductor, and resin. If necessary, a member made of a material different from the substrate may be provided on the surface of the substrate. The substrate is, for example, a silicon wafer, a compound semiconductor wafer, or quartz glass.

[0014] The original stage 204 is equipped with an original chuck (not shown) that serves as an original holder. The original stage 204 holds the original 203 by means of the original chuck. The original stage 204 is capable of linear movement in the X, Y, and Z directions, and is also capable of rotation in the θX, θY, and θZ directions, and each of these axes can be controlled independently.

[0015] A laser interferometer (not shown) is provided to measure with high precision the position of the original stage 204. The position of the original stage 204 can be identified from the amount of change in the measurement value obtained by the laser interferometer.

[0016] The original transport system 214 can include an original hand 215, an original pre-alignment stage 216, an original transport robot 217, and a storage unit 218. The original transport robot 217 is an articulated robot. The original transport robot 217 has a hand that holds the original 203, and can move this hand to any position in the XYZ space. The storage unit 218 stores the original 203. The original 203 can be placed in the storage unit 218 from outside the apparatus. The original 203 placed in the storage unit 218 is placed on the original pre-alignment stage 216 by the original transport robot 217, which is also an articulated robot.

[0017] The position of the original 203 on the original pre-alignment stage 216 is measured by observing the marks on the original 203 with a microscope (not shown). After measurement, the original hand 215 holds the original 203 on the original pre-alignment stage 216 and drives it in the +Y direction along a guide (not shown) to a position where the original 203 is to be delivered to the original stage 204. After this drive is complete, the original hand 215 drives it in the -Z direction and delivers the original 203 to the original stage 204. The original stage 204 holds the original 203 by vacuum suction. The deviations of the original 203 in the X direction, Y direction, and θZ direction relative to the original pre-alignment stage 216 measured by the original pre-alignment stage 216 can be corrected by changing the position where the original stage 204 receives the original 203.

[0018] The substrate transport system 210 may include a supply hand 211, a collection hand 212, a storage unit 213, a pre-alignment unit 219, a transport robot 220, and a temporary placement table 221. The substrate 2 is stored in the storage unit 213. The transport robot 220 is an articulated robot. The transport robot 220 has a hand that holds the substrate 2, and can move this hand to any position in the XYZ space. The transport robot 220 takes the substrate 2 from the storage unit 213 and places the substrate 2 on the pre-alignment unit 219. In the pre-alignment unit 219, measurement light is irradiated onto the outer periphery of the substrate 2, and the reflected light is measured with a sensor, thereby measuring the outer position of the substrate 2 relative to the pre-alignment unit 219.

[0019] The supply hand 211 is a transport mechanism that transports the substrate 2 from the pre-alignment unit 219 onto the substrate stage 1, specifically onto the pin members 9 that are configured on the coarse movement stage 13. The supply hand 211 can hold the substrate 2 by vacuum suction. The recovery hand 212 is a transport mechanism that recovers the substrate 2 from the substrate stage 1 and transports it to the temporary placement table 221. The recovery hand 212 can hold the substrate 2 by vacuum suction.

[0020] The temporary placement table 221 is a table on which the substrate 2 retrieved by the retrieval hand 212 from the substrate stage 1 is temporarily placed. Since the transfer robot 220 cannot directly pick up the substrate from the retrieval hand 212, the transfer robot 2 receives and delivers the substrate 2 via the temporary placement table 221.

[0021] The substrate stage (substrate holding device) 1 may include a coarse movement stage 13 and a fine movement stage 8 mounted on the coarse movement stage 13. A substrate chuck 3 is mounted on the fine movement stage 8. The substrate chuck 3 is a holding unit that holds the substrate 2. The substrate chuck 3 may be a vacuum chuck that uses vacuum suction to attract the underside of the substrate 2 to its holding surface. Alternatively, the substrate chuck 3 may be an electrostatic chuck that uses electrostatic action to attract the underside of the substrate 2 to its holding surface. In the following, the substrate chuck 3 will be described as a vacuum chuck. The fine movement stage 8 is configured to be linearly movable in the X, Y, and Z directions and rotatable in the θX, θY, and θZ directions. The substrate stage 1 is equipped with a drive mechanism (not shown) that drives the fine movement stage 8 along each of these axes, and each of these axes can be controlled independently.

[0022] A laser interferometer (not shown) is provided to measure with high precision the position of the fine movement stage 8. The position of the fine movement stage 8 can be identified from the amount of displacement measured by the laser interferometer.

[0023] The pin members 9 are used when receiving the substrate 2 from the supply hand 211 and when transferring the substrate 2 to the collection hand 212. The pin members 9 can suction-hold the substrate 2. For example, at least three pin members 9 can be arranged at or near the vertices of a triangle as large as possible in a plane parallel to the holding surface of the substrate chuck 3 to stably support the substrate 2. The pin members 9 pass through holes formed in the fine movement stage 8 and the substrate chuck 3, respectively, and are arranged so that the longitudinal axes of the pin members are parallel to the direction perpendicular to the holding surface of the substrate chuck 3 (holding unit) that holds the substrate (i.e., the Z direction). The lower ends of the pin members 9 are fixed to the coarse movement stage 13, and the upper ends are configured to be retractable relative to the holding surface of the substrate chuck 3. The pin members 9 function as support members that support the substrate 2 by protruding above the holding surface. The movement of the pin members 9 to appear and disappear from the holding surface of the substrate chuck 3 can be performed by at least one of the extension and contraction of the pin members 9, the vertical movement of the coarse movement stage 13, and the vertical movement of the fine movement stage 8.

[0024] The coarse movement stage 13 can move linearly in the X and Y directions and rotate in the θZ direction. For example, a capacitance sensor is used to measure the distance between the coarse movement stage 13 and the fine movement stage 8. Based on the measurement results, an actuator such as a linear motor is used to control the position of the coarse movement stage 13 so that it follows the position of the fine movement stage 8. The pin member 9 is fixed to the coarse movement stage 13 and therefore moves together with the coarse movement stage 13.

[0025] The off-axis scope 209 can measure alignment marks on the substrate 2 .

[0026] The control unit 100 controls the operation of the exposure apparatus 200. The control unit 100 can include the functions of a driver and a controller that control sensors, actuators, and the like within the exposure apparatus 200.

[0027] The following describes the recovery sequence of the substrate 2 in this embodiment. The recovery sequence of the substrate 2 may include an operation of transferring the substrate 2 from the substrate chuck 3 to the pin members 9 after exposure is completed. This operation may be performed by relatively driving the substrate chuck 3 and the pin members 9 in the Z direction. An adhesive force acts between the substrate 2 and the substrate chuck 3. In this specification, adhesive force refers to the force required to apply a force to the substrate 2 and the substrate chuck 3 in a direction that separates them. In other words, adhesive force relates to the ease with which the substrate 2 can be separated from the substrate chuck 3. Even after the substrate 2 is released from the substrate chuck 3, adhesive force may remain depending on the characteristics of the holding surface of the substrate chuck 3, the characteristics of the substrate 2, the characteristics of the exposure process, the influence of foreign matter between the substrate 2 and the substrate chuck 3, and other factors. Furthermore, even when the vacuum suction is released during substrate unloading, atmospheric pressure does not immediately return, and the residual pressure (residual suction force) may become the adhesive force. Furthermore, even when the substrate chuck 3 is an electrostatic chuck, an adhesive force may remain due to the electrostatic chuck or the substrate being charged when the power is off. If the adhesive force is strong, the substrate 2 will be pulled away from the substrate chuck 3 against the adhesive force, which may damage the substrate 2, the substrate chuck 3, or both.

[0028] Therefore, in this embodiment, when the substrate 2 is released from the substrate chuck 3, gas is supplied between the substrate 2 and the substrate chuck 3 to facilitate separation of the two. However, if the amount of gas supplied when separating the substrate 2 from the substrate chuck 3 is excessive relative to the adhesive force, the substrate 2 will lift up from the substrate chuck 3 and slide sideways. On the other hand, if the amount of gas supplied when separating the substrate 2 from the substrate chuck 3 is too small relative to the adhesive force, the substrate 2 will not separate from the substrate chuck 3, causing wear on the substrate chuck 3. Because adhesive force is caused by the characteristics of the substrate 2, the characteristics of the substrate chuck 3, the characteristics of the exposure process, etc., the amount of gas supplied when separating the substrate 2 from the substrate chuck 3 needs to be appropriately set each time depending on the adhesive force.

[0029] The following describes the holding and release of the substrate 2 by the substrate chuck 3, and the control of the supply of gas between the substrate 2 and the substrate chuck 3.

[0030] 1 is a schematic diagram showing the configuration of a substrate stage 1. The substrate chuck 3 is configured to hold the substrate 2 by reducing the pressure in the space between the substrate 2 and the substrate chuck 3 and vacuum-adhering the substrate 2 to the holding surface. The substrate chuck 3 is held by vacuum adsorption on a fine movement stage 8. The fine movement stage 8 is mounted on a coarse movement stage 13.

[0031] A gas flow path 10 is disposed within the coarse movement stage 13. The gas flow path 10 is disposed so that a vacuum pump 5 (vacuum source), which serves as a negative pressure generating means, sucks gas from between the substrate 2 and the substrate chuck 3 through an opening formed on the surface of the substrate chuck 3 facing the substrate 2. The gas flow path 10 is also disposed so that gas from a positive pressure tank 6, which serves as a positive pressure generating means (gas supply source), is supplied between the substrate 2 and the substrate chuck 3 through the opening. A pressure sensor 20, regulators 41, 61, 62, and 63, and solenoid valves 31, 51, 52, and 53 are provided on the gas flow path 10. The gas flow path 10 is, for example, a pipe through which gas flows (for causing gas to flow). The gas flow path 10, the regulator, the solenoid valve, and the like, which are members or mechanisms for supplying gas to the space between the substrate 2 and the substrate chuck 3, may be collectively referred to as a gas supply unit. Alternatively, the gas flow path 10 may be referred to as a gas supply unit.

[0032] A plurality of openings 7 (see FIG. 3) are formed on the surface of the substrate chuck 3 facing the substrate 2. The gas flow path 10 branches and connects to each opening. The gas flow path 10 is connected to a vacuum pump 5 via an electromagnetic valve 31 and a regulator 41, and is connected to a positive pressure tank 6 via electromagnetic valves 51, 52, and 53 and regulators 61, 62, and 63. Generally, the vacuum pump 5 and the positive pressure tank 6 are configured as factory equipment and are therefore installed outside the substrate stage 1.

[0033] The pressure inside the gas flow path 10 is measured by a pressure sensor 20. In one example, the pressure sensor 20 is disposed so as to measure the pressure inside the gas flow path 10 at a position closer to the vacuum pump than the branch of the gas flow path 10 and closer to the substrate chuck 3 than the solenoid valves 31, 51, 52, and 53. This is to enable the pressure sensor 20 to accurately measure the pressure in the space between the substrate 2 and the substrate chuck 3.

[0034] The regulator 41 and the solenoid valve 31 are disposed between the vacuum pump 5 and the substrate chuck 3. The regulator 41 is configured to adjust the pressure in the gas flow path 10 to a desired vacuum pressure. The solenoid valve 31 is disposed on the substrate chuck 3 side of the regulator 41 in order to supply the pressure adjusted by the regulator 41 to the substrate chuck 3. When the solenoid valve 31 is turned ON, the vacuum pump 5 adjusts the pressure in the space between the substrate 2 and the substrate chuck 3. When the solenoid valve 31 is turned OFF, the pressure adjustment in the space between the substrate 2 and the substrate chuck 3 is no longer performed.

[0035] The regulators 61, 62, and 63 and the solenoid valves 51, 52, and 53 are disposed between the positive pressure tank 6 and the substrate chuck 3. The regulators 61, 62, and 63 are configured to adjust the supply pressure from the positive pressure tank 6 in the gas flow path 10. Adjusting the supply pressure also allows for adjustment of the supply flow rate. The solenoid valves 51, 52, and 53 are disposed on the gas flow path 10 on the substrate chuck 3 side of the regulators 61, 62, and 63. When the solenoid valves 51, 52, and 53 are turned ON, the positive pressure tank 6 adjusts the pressure in the space between the substrate 2 and the substrate chuck 3. When the solenoid valves 51, 52, and 53 are turned OFF, the pressure in the space between the substrate 2 and the substrate chuck 3 is no longer adjusted. Note that although FIG. 1 shows three sets of regulators and solenoid valves between the positive pressure tank 6 and the substrate chuck 3, the number of sets is not limited to a specific number. One set, four or more sets may be used. Also, instead of the combination of the solenoid valve and the regulator, a servo valve whose opening and closing degree can be freely set may be configured.

[0036] When the substrate 2 is held by the substrate chuck 3 by vacuum suction, the solenoid valve 31 is turned ON and the solenoid valves 51, 52, and 53 are turned OFF. This allows the pressure in the space between the substrate 2 and the substrate chuck 3 to be reduced by the vacuum pump 5. When the substrate 2 is released from the substrate chuck 3, the solenoid valve 31 is turned OFF and at least one of the solenoid valves 51, 52, and 53 is turned ON. This allows the space between the substrate 2 and the substrate chuck 3 to be pressurized with gas from the positive pressure tank 6.

[0037] By changing the settings of the regulators 61, 62, and 63, it is possible to change the flow rate and pressure of the gas filling the space between the substrate 2 and the substrate chuck 3 when any one of the solenoid valves 51, 52, and 53 is turned on. In one example, the regulators 61, 62, and 63 are set so that the gas supply flow rate increases in the order of the regulators 61, 62, and 63. When releasing the substrate 2 from the substrate chuck 3, the control unit 100 controls the supply of gas through the gas flow path 10 and the opening 7 based on previously obtained information regarding the adhesive force of the substrate 2 to the holding surface (information regarding the ease of separation). For example, the control unit 100 determines which of the solenoid valves 51, 52, and 53 to turn on and the gas supply time based on the information regarding the adhesive force of the substrate 2 to the holding surface (information regarding the ease of separation).

[0038] The control unit 100 may be configured, for example, by a general-purpose or dedicated processor with a program embedded in memory. Alternatively, the control unit 100 may be configured by a PLD (abbreviation for Programmable Logic Device) such as an FPGA (abbreviation for Field Programmable Gate Array) or an ASIC (abbreviation for Application Specific Integrated Circuit). Alternatively, the control unit 100 may be configured by a combination of all or part of a processor, PLD, and ASIC. The control unit 100 may be configured inside the exposure apparatus 200, or may be configured external to the exposure apparatus 200. When the control unit 100 is configured external to the exposure apparatus 200, the functions of the control unit 100 are installed in, for example, a server device or the like that is communicatively connected to the exposure apparatus 200.

[0039] FIG. 2 shows the functional configuration of the control unit 100. The control unit 100 can include an instruction unit 110, a memory unit 120, and a processing unit 130. The instruction unit 110 instructs the control amount for each driving unit, including the fine movement stage 8. The memory unit 120 stores various data and programs related to exposure control. The processing unit 130 executes various processes related to exposure control. For example, the processing unit 130 calculates the drive target positions of the substrate stage 1 and the original stage 204. The processing unit 130 also executes an exposure sequence and a substrate supply and recovery sequence in accordance with the control program stored in the memory unit 120.

[0040] 2 shows an example in which the control unit 100 includes the storage unit 120 and the processing unit 130, the storage unit 120 and the processing unit 130 may be provided separately from the control unit 100.

[0041] 3 is a plan view of the substrate chuck 3 as viewed from the +Z direction. The substrate chuck 3 is provided with an annular seal portion 60 at a position along the outer periphery of the substrate chuck 3. However, the presence, number, and arrangement of the seal portion 60 are not limited to the example shown in FIG. 3. For example, the substrate chuck 3 may not be provided with a seal portion. Alternatively, multiple seal portions may be provided.

[0042] The surface of the substrate chuck 3 is provided with a plurality of protrusions (not shown), and the upper surfaces of these protrusions can serve as holding surfaces for holding the substrate 2. These protrusions are called chuck pins. The substrate chuck 3 is provided with openings 7 connected to a gas flow path 10. Although twelve openings 7 are shown in FIG. 3, the arrangement and number of the openings 7 are not limited to the example shown in FIG. 3.

[0043] The operation of holding the substrate 2 by the substrate chuck 3 through vacuum suction is performed by exhausting the gas in the space between the substrate 2 and the substrate chuck 3 through the opening 7. The provision of a seal portion 60 between the substrate 2 and the substrate chuck 3 prevents the inflow of ambient air, making vacuum suction possible.

[0044] The operation of releasing the substrate 2 from the substrate chuck 3 (operation of separating the substrate 2 from the substrate chuck 3) is performed by supplying gas between the substrate 2 and the substrate chuck 3 through the opening 7. Here, if the amount of gas supplied (pressure and flow rate) or the gas supply time is excessive compared to the adhesive force, the substrate 2 will lift up from the substrate chuck 3 and slide sideways. On the other hand, if the amount of gas supplied or the gas supply time when separating the substrate 2 from the substrate chuck 3 is insufficient compared to the adhesive force, the substrate 2 will not separate from the substrate chuck 3, causing wear on the substrate chuck when the substrate 2 is lifted up. A detailed explanation of adhesive force and a method for optimizing the amount of gas supplied compared to adhesive force will be provided later.

[0045] A method for transferring the substrate 2 from the substrate chuck 3 to the pin members 9 will be described with reference to Figure 8. Figure 8 shows a schematic cross-sectional view of the substrate stage 1. The fine movement stage 8 moves in the Z direction along the longitudinal direction of the pin members 9. The fine movement stage 8 can move in the Z direction while tilting in accordance with the Z positional relationship of the three pin members 9. The pin members 9 are placed on a coarse movement stage 13 that can be driven in the X and Y directions. The Z direction position of the pin members 9 can be measured using, for example, an interferometer or a capacitance sensor (not shown).

[0046] The pin member 9 is connected to the vacuum pump 5 via a gas flow path 70. A regulator 73 and a solenoid valve 72 are provided between the vacuum pump 5 and the pin member 9. The regulator 73 is configured to adjust the vacuum pressure to a desired level. The solenoid valve 72 is located closer to the pin member 9 than the regulator 73. This is because the pressure adjusted by the regulator 73 is supplied to the substrate chuck 3. When the solenoid valve 72 is turned on, the vacuum pump 5 adjusts the pressure in the space between the substrate 2 and the substrate chuck 3. When the solenoid valve 72 is turned off, the pressure adjustment in the space between the substrate 2 and the substrate chuck 3 is no longer performed. In addition, a pressure sensor 71 is provided to monitor the pressure between the pin member 9 and the substrate 2. The pressure sensor 71 must be located closer to the pin member 9 than the solenoid valve 72. In FIG. 8, the pressure sensor 71, the solenoid valve 72, and the regulator 73 are located outside the coarse movement stage 13, but they may also be located inside the coarse movement stage.

[0047] In FIG. 8(a), the fine movement stage 8 is positioned in the +Z direction, and the substrate chuck 3 vacuum-sucks the substrate 2. In FIG. 8(b), the fine movement stage 8 moves in the -Z direction, causing the pin members 9 to come into contact with the substrate 2, and the fine movement stage 8 stops moving. The control unit 100 then releases the substrate chuck 3 from its suction hold on the substrate 2. At this time, the control unit 100 controls the supply of gas via the gas flow path 10 and the opening 7 based on information regarding the adhesive force of the substrate 2 to the holding surface.

[0048] Thereafter, the solenoid valve 72 is turned ON, causing the pin members 9 to suction and hold the substrate 2. Then, as shown in FIG. 8(c), while the pin members 9 are suction-holding the substrate 2, the fine movement stage 8 further moves in the -Z direction. In this way, the substrate 2 is transferred from the substrate chuck 3 to the pin members 9.

[0049] 8, the substrate 2 is transferred from the substrate chuck 3 to the pin members 9 by moving the fine movement stage 8, but it is sufficient if the relative positions of the substrate chuck 3 and the pin members 9 can be changed. For example, the entire pin members 9 or their tips may move in the +Z direction. Changing the relative positions of the substrate chuck 3 and the pin members 9 is synonymous with moving the substrate chuck 3 and the pin members 9 relative to each other.

[0050] 9 is a plan view of the substrate chuck 3 as viewed from the +Z direction. The surface of the substrate chuck 3 is provided with a plurality of protrusions (chuck pins) (not shown), and the upper surfaces of these protrusions can serve as a holding surface for holding the substrate 2. The outer periphery of the substrate chuck 3 is provided with an annular seal portion 60 to prevent air from leaking out of the substrate chuck 3 when the substrate 2 is vacuum-sucked. The substrate chuck 3 has an opening 7 connected to a gas flow path 10. The substrate chuck 3 holds the substrate 2 by vacuum suction through the opening 7. The space between the substrate 2 and the chuck pins is in a vacuum state, allowing the substrate 2 to be sucked and held with a uniform force.

[0051] Holes 14 for passing pin members 9 in the Z direction are formed in the substrate chuck 3 and the fine movement stage 8, and the fine movement stage 8 can be driven in the Z direction without interfering with the pin members 9. Fig. 9 shows the holes 14 through which the pin members 9 pass. Fig. 9 shows a configuration in which three pin members 9 are installed, but there is no limit to the number of pin members 9 as long as the substrate 2 can be stably held, depending on the size, material, and mass of the substrate 2.

[0052] In the example shown in FIG. 8 , the pin members 9 suction-hold the substrate 2 by moving the fine movement stage 8, but it is sufficient if the relative position between the substrate chuck 3 and the pin members 9 can be changed. For example, the entire pin members 9 or their tips may move in the +Z direction. Changing the relative position between the substrate chuck 3 and the pin members 9 is synonymous with moving the substrate chuck 3 and the pin members 9 relative to each other. Alternatively, a configuration may be employed in which the pin members 9 suction-hold the substrate 2 by extending the pin members 9 rather than by moving the fine movement stage 8. In this way, the substrate stage 1 may include a drive unit that drives the fine movement stage 8 and / or drives or deforms the pin members 9 to separate the substrate 2 from the substrate chuck 3.

[0053] 10 shows an example in which the pin members 9 suction-hold the substrate 2 by extending the pin members 9 rather than by moving the fine movement stage 8. Hereinafter, the movement of the positions of the tips of the pin members 9 as the pin members 9 extend and contract may be referred to as "movement of the pin members 9."

[0054] In FIG. 10(a), the tip of the pin member 9 on the +Z direction side is located on the -Z direction side of the holding surface of the substrate chuck 3 and is not in contact with the substrate 2. In this state, the substrate chuck 3 holds the substrate 2. In FIG. 10(b), the pin member 9 extends in the +Z direction, bringing the pin member 9 into contact with the substrate 2. The extension of the pin member 9 stops at the position where it comes into contact with the substrate 2. Thereafter, the control unit 100 releases the suction hold of the substrate 2 by the substrate chuck 3. At this time, the control unit 100 controls the supply of gas through the gas flow path 10 and the opening 7 based on information regarding the adhesive force of the substrate 2 to the holding surface (information regarding the ease of separation).

[0055] Thereafter, the solenoid valve 72 is turned ON, causing the pin members 9 to suction and hold the substrate 2. Then, as shown in Fig. 10(c), while the pin members 9 are suction-holding the substrate 2, the pin members 9 further extend in the +Z direction. In this manner, the substrate 2 is transferred from the substrate chuck 3 to the pin members 9.

[0056] 10 , the substrate 2 is transferred from the substrate chuck 3 to the pin members 9 by extending the pin members 9, but the substrate 2 may be transferred from the substrate chuck 3 to the pin members 9 by moving the entire pin members 9. Note that the driving unit that drives the pin members 9 may be included in the pin members 9 or may be connected to the pin members 9.

[0057] 11 shows a diagram illustrating the drive profile of the fine movement stage 8. This Fig. 11 shows the relationship between time and the Z direction position of the fine movement stage 8 during the transfer operation of the substrate 2 from the substrate chuck 3 to the pin members 9. Note that the amount of change in the Z direction position of the fine movement stage 8 is synonymous with the amount of change in the Z direction position of the substrate chuck 3.

[0058] In the first section, the instruction unit 110 instructs the fine movement stage 8 to move at high speed in the -Z direction using the first position stored in the memory unit 120 as the target position. When the fine movement stage 8 is driven in the -Z direction, the first position is set to the same position as the Z direction position of the fine movement stage 8 when the substrate 2 and the pin members 9 come into contact, or to a position on the +Z side of that position. Here, an example is shown in which the fine movement stage 8 moves in the -Z direction, as shown in FIG. 8 . However, when the pin members 9 are moved in the +Z direction as shown in FIG. 10 , only the direction of movement is different, so the -Z direction and the +Z direction in FIG. 11 can be interchangeable. In the figures and explanations described below, when the pin members 9 are moved in the +Z direction, the -Z direction and the +Z direction can also be interchangeable. Furthermore, in a configuration in which both the fine movement stage 8 and the pin members 9 are driven, the movement of the fine movement stage 8 in the Z direction in the explanations of FIG. 11 and the figures described below can be interchangeable with the description of the relative movement of the fine movement stage 8 and the pin members 9.

[0059] In the second section, the control unit 100 moves the fine movement stage 8 slowly in the −Z direction and monitors the drive current value for driving the fine movement stage 8. By monitoring the drive current value while moving the fine movement stage 8 in the −Z direction, the drive current value that changes when the substrate 2 and the pin members 9 come into contact can be detected, making it possible to detect contact between the substrate 2 and the pin members 9. The reason for moving the fine movement stage 8 slowly in the second section is that bringing the substrate 2 into contact with the pin members 9 at high speed could damage the substrate 2 and the pin members 9. When the control unit 100 detects contact between the pin members 9 and the substrate 2 by monitoring the drive current value, it stops the movement of the fine movement stage 8 in the −Z direction and ends the second section. Note that the control unit 100 may update the value of the first position stored in the memory unit 120 with the value of the Z-direction position of the fine movement stage 8 when contact between the pin members 9 and the substrate 2 is detected in the second section. Updating the first position in this manner reduces the time required for the second section.

[0060] Furthermore, if the coordinates of the fine movement stage 8 when the substrate 2 and pin members 9 come into contact are the same as the first position, the substrate 2 and pin members 9 are in contact when moved to the first position. In this case, contact between the substrate 2 and pin members 9 is detected from the drive current value at the same time as the start of the second section, so the fine movement stage 8 is not moved at low speed in the second section, and the process moves to the third section. Note that if it is known that the coordinates of the fine movement stage 8 when the substrate 2 and pin members 9 come into contact are the same as the first position, the second section may be omitted, and the process may move to the third section after the first section.

[0061] In the third section, the control unit 100 stops suction of gas between the substrate 2 and the substrate chuck 3 and simultaneously supplies gas between the substrate 2 and the substrate chuck 3. At this time, supplying gas in accordance with the adhesive force prevents the substrate 2 from floating and sliding from the substrate chuck 3. Furthermore, in the fourth section described below, the substrate 2 is forcibly separated from the substrate chuck 3 while the adhesive force remains, thereby suppressing wear of the substrate chuck 3 caused by sliding between the substrate 2 and the substrate chuck 3. In the third section, the pin members 9 also start suctioning gas between the substrate 2 and the pin members 9. In the third section, the control unit 100 estimates the adhesive force based on the characteristics of the substrate 2, the characteristics of the substrate chuck 3, the characteristics of the exposure process, etc., and can optimize the gas supply parameters and supply the gas. The estimation of adhesive force and the supply of gas will be described later.

[0062] In the fourth section, the control unit 100 moves the fine movement stage 8 at a low speed in the -Z direction to separate the substrate 2 and the substrate chuck 3 by a small distance. If the fine movement stage 8 is moved at a high speed in the -Z direction to forcibly separate the substrate 2 and the substrate chuck 3 while adhesive force is present, the substrate 2 will slide sideways on the substrate chuck 3, causing wear to the substrate chuck 3. Wear of the substrate chuck 3 will affect the subsequent suction and holding of the substrate 2. Therefore, in order to reduce wear of the substrate chuck 3, gas is supplied between the substrate 2 and the substrate chuck 3 in accordance with the adhesive force in the third section.

[0063] In the fifth section, the fine movement stage 8 is moved at high speed in the −Z direction to the final position in the Z direction.

[0064] If the adhesive force between the substrate 2 and the substrate chuck 3 can be reduced by supplying gas in the third section, the movement speed of the fine movement stage 8 can be increased in the fourth section. For example, it is possible to eliminate the fifth section described below and drive the fine movement stage 8 at high speed in the -Z direction to the final position in the Z direction.

[0065] A method for estimating adhesive force will now be described. The adhesive force is the resultant force of the suction pressure acting between the substrate 2 and the substrate chuck 3 and the adhesive force between the substrate 2 and each chuck pin of the substrate chuck 3. The adhesive force can be estimated based on the characteristics of the substrate 2, the characteristics of the substrate chuck 3, the characteristics of the exposure process, etc. In one example, the adhesive force can be estimated based on at least one of the characteristics of the substrate 2 and the characteristics of the substrate chuck 3.

[0066] The characteristics of the substrate 2 include, for example, at least one of the following: the amount of warping of the substrate 2, the roughness of the surface (back surface) of the substrate 2 that contacts the holding surface of the substrate chuck 3, the type of film formed on the substrate 2, the material of the substrate 2, and the thickness of the substrate 2. For example, if the substrate 2 is warped, the adhesion between the substrate 2 and the substrate chuck 3 decreases. This is because the warping of the substrate 2 causes stress in the direction of separating the substrate 2 from the substrate chuck 3, reducing the degree of adhesion. On the other hand, if the substrate 2 is not warped, the degree of adhesion is high and the adhesion is strong. The roughness of the back surface of the substrate 2 also affects the adhesion. For example, if the back surface of the substrate 2 is not rough, the substrate 2 and the substrate chuck 3 adhere firmly. This is a state of strong adhesion. On the other hand, if the back surface of the substrate 2 is rough, the substrate 2 and the substrate chuck 3 do not adhere to each other, resulting in a weak adhesion. Furthermore, if a film is formed on the back surface of the substrate, the type of film can affect the adhesion. Furthermore, the material and thickness of the substrate 2 also affect the weight of the substrate 2. The heavier the substrate, the stronger the adhesion between the substrate 2 and the substrate chuck 3. This is a state in which the adhesive force is strong.

[0067] The characteristics of the substrate chuck 3 include at least one of the uniformity of the chuck pin height (flatness of the holding surface), the surface coating of the chuck pin (surface roughness of the holding surface), the thickness and material of the chuck pin, etc. The more uniform the chuck pin height (the flatter the holding surface), the stronger the adhesion between the substrate 2 and the substrate chuck 3, resulting in a stronger state of adhesion. Also, the thicker the chuck pin, the larger the contact area between the holding surface of the substrate chuck 3 and the substrate 2, resulting in a stronger state of adhesion. If the chuck pin is made of a material with fine particles, for example, the substrate 2 and the substrate chuck 3 will adhere more firmly and the adhesion will be stronger.

[0068] Characteristics of the exposure process can include the exposure time, exposure dose, and whether or not θ correction drive is used. For example, a long exposure time increases the time that the substrate 2 and the substrate chuck 3 are vacuum-attached, resulting in stronger adhesion between the two. A high exposure dose causes thermal expansion of the substrate 2. During exposure, the substrate 2 is vacuum-attached to the substrate chuck 3, so the backside of the substrate 2 does not expand despite internal stress. However, when the vacuum is released, the internal stress is released, causing the substrate 2 to expand. A slight lateral shift of the substrate 2 on the substrate chuck 3 weakens the adhesive force between the substrate 2 and the substrate chuck 3. Furthermore, during the exposure sequence, when observing the alignment mark with an off-axis scope, the substrate 2 may be found to be misaligned in the θZ direction on the substrate chuck 3. To rotate the substrate 2 in the θZ direction on the substrate stage 1, the following operation, called θ correction drive, may be performed. An example of rotating the substrate 2 by 200 μrad is described below. The control unit 100 rotates the fine movement stage 8 by 200 μrad from the 0 μrad position. Next, the control unit 100 transfers the substrate 2 from the substrate chuck 3 to the pin members 9. In this state, the control unit 100 rotates the fine movement stage 8 by -200 μrad and returns it to the 0 μrad position. The substrate 2 on the pin members 9 is not affected by this rotation. In this state, the control unit 100 transfers the substrate 2 back to the substrate chuck 3. This results in the substrate 2 being rotated by 200 μrad relative to the substrate chuck 3. This method makes it possible to correct misalignment in the θZ direction. Once the substrate 2 is released from the substrate chuck 3 and vacuum-adsorbed again, this is equivalent to changing the exposure time. In this way, the adhesive force also changes depending on the exposure process.

[0069] In this way, if the respective characteristics of the substrate 2, the substrate chuck 3, and the exposure process are known, it is possible to estimate the adhesive force acting between the substrate 2 and the substrate chuck 3. This adhesive force can be estimated using a simulator (not shown) that models the substrate 2 and the substrate chuck 3.

[0070] Next, a simulation of the change in adhesive force when the amount of gas supplied and the gas supply time are changed will be described. The greater the amount of gas supplied, the weaker the adhesive force between the substrate 2 and the substrate chuck 3. Furthermore, even if the amount of gas supplied is the same, the longer the supply time, the weaker the adhesive force between the substrate 2 and the substrate chuck 3. Parameters for the amount of gas supplied and the gas supply time are determined in advance so that the adhesive force approaches zero after gas supply. These are set as optimal parameters for gas supply. In this way, information regarding the adhesive force of the substrate 2 to the holding surface of the substrate chuck 3 (information regarding the ease of separation) can be obtained in advance.

[0071] Control of gas supply will be described with reference to Fig. 4(a). Fig. 4(a) shows an example of the change over time in the gas supply flow rate when the substrate 2 is released from the substrate chuck 3. Fig. 4(a) shows that the gas supply flow rate is constant when each solenoid valve is turned on. Here, the gas supply flow rates are set to increase in the order of regulators 61, 62, and 63, so that the gas supply flow rates supplied to the substrate 2 and substrate chuck 3 increase in the order of solenoid valves 51, 52, and 53 turned on.

[0072] FIG. 4(a) is a diagram assuming a case where the adhesive force between the substrate 2 and the substrate chuck 3 is large. The gas supply amount and gas supply time are determined based on the results of a simulation performed in advance using the characteristics of the substrate 2 and the characteristics of the substrate chuck 3. The determined gas supply amount and gas supply time are stored in the memory unit 120. In FIG. 4(a), the control unit 100 (instruction unit 110) turns on the solenoid valve 51 in accordance with the gas supply amount stored in the memory unit 120. The length of time for which the solenoid valve 51 is turned on also depends on the gas supply time stored in the memory unit 120.

[0073] FIG. 4(b) illustrates an example of the change in adhesive force between the substrate 2 and the substrate chuck 3 while gas is being supplied under the gas supply control shown in FIG. 4(a). The adhesive force gradually weakens during gas supply. If the adhesive force is weakened by gas supply to the optimum point shown in FIG. 4(b), the substrate 2 will not slide sideways on the substrate chuck 3 and the substrate chuck 3 will not wear out. The reason why the point where the adhesive force is 0 is not set as the optimum point is that a small amount of adhesive force is left to prevent the substrate 2 from sliding sideways.

[0074] By changing the solenoid valve that is turned ON, it is possible to control the amount of gas supplied between the substrate 2 and the substrate chuck 3. In addition, it is possible to control the solenoid valve to be turned OFF to stop the gas supply after a predetermined time has elapsed since the gas supply started. This makes it possible to create a state in which the substrate 2 does not slide sideways on the substrate chuck 3 and the substrate chuck 3 does not wear out.

[0075] By setting optimal gas supply parameters, the goal is to make the adhesive force acting between the substrate 2 and the substrate chuck 3 approach zero after gas supply. If the adhesive force becomes negative, the gas supply is excessive, causing the substrate 2 to slide sideways on the substrate chuck 3. Conversely, if the adhesive force is too strong, the substrate 2 will be worn when it is peeled off the substrate chuck 3.

[0076] The gas supply control described above is effective when a specific type of substrate is placed in the exposure tool. In reality, substrates with different characteristics are placed in the exposure tool. In a mass production factory for semiconductor devices, a specific number of substrates (for example, 25 substrates) that have undergone the same manufacturing process are generally managed as one lot. Therefore, exposure processing jobs are submitted in lot units. It is expected that the characteristics of the substrates will differ from lot to lot.

[0077] In one example, optimal gas supply parameters are calculated in advance by performing a simulation while changing the characteristics of the substrate. The substrate characteristics and the optimal gas supply parameters are associated and stored in the storage unit 120. For example, optimal gas supply parameters for a substrate with a warpage of 50 μm, which is one of its characteristics, are calculated in advance, and the gas supply parameters for that warpage of 50 μm are associated and stored in the storage unit 120. Similarly, optimal gas supply parameters for a substrate with a warpage of 100 μm are calculated in advance, and the gas supply parameters for that warpage of 100 μm are associated and stored in the storage unit 120. When a substrate 2 with a warpage of 50 μm is placed on the substrate stage 1, an input indicating that the warpage of the substrate 2 is 50 μm is provided to the control unit 100. The processing unit 130 retrieves the gas supply parameters corresponding to the warpage of 50 μm from the storage unit 129. The processing unit 130 transfers the operation amount of the selected solenoid valve to the instruction unit 110 based on the retrieved parameters. The instruction unit 110 instructs the selected solenoid valve on the amount of operation.

[0078] The substrate characteristics may be input to the control unit 100 by a user via a user interface. Alternatively, the substrate characteristics may be input to the control unit 100 via an external device. The external device may be, for example, a measuring instrument that measures the amount of warpage of the substrate. Alternatively, the substrate characteristics may be measured in the pre-alignment unit 219, and the measurement results may be input to the control unit 100. Alternatively, information on the film type as a substrate characteristic may be input to the control unit 100 from a film forming apparatus.

[0079] Furthermore, the characteristics of the substrate chuck 3 may differ. For example, suppose the weight of the substrate is heavy and the chuck pins of the substrate chuck 3 are thick. In this case, the characteristics of the substrate and the chuck pins of the substrate chuck 3 may differ. zipper Simulations are performed while changing the characteristics of the gas supply, and optimal gas supply parameters are calculated for each characteristic.

[0080] The characteristics of the substrate and the characteristics of the substrate chuck are input to the control unit 100. The processing unit 130 retrieves parameters corresponding to this input from the storage unit 120. The processing unit 130 transfers the manipulated variable of the selected solenoid valve based on the retrieved parameters to the instruction unit 110. The instruction unit 110 instructs the selected solenoid valve on the manipulated variable. The characteristics of the substrate chuck may be input to the control unit 100 by a user via a user interface. Alternatively, the type of the substrate chuck 3 may be converted into the characteristics of the substrate chuck 3 and input to the control unit 100. For example, the type of the chuck may be printed on the substrate chuck 3. The printing may be characters such as Japanese, English, or numbers, or may be a barcode or a two-dimensional barcode. A reader that reads this printing is disposed in the device, and the type of the substrate chuck 3 is determined from the results read by the reader, and the information is converted (specified) into information on the characteristics of the substrate chuck 3, such as the thickness and material of the pins, and input to the control unit 100.

[0081] The above describes an example in which gas supply parameters are obtained in advance through simulation, and gas is supplied based on optimal parameters. By obtaining the parameters in advance, the amount of calculation in the processing unit 130 can be reduced. In addition, the time required to release the substrate chuck 3 from the substrate 2 can be shortened.

[0082] If the calculation time is allowable, the characteristics of the substrate 2 and the characteristics of the substrate chuck 3 can be input to the control unit 100 to execute a simulator within the processing unit 130. The processing unit 130 as a simulator calculates the adhesive force based on the characteristics of the substrate 2 and the characteristics of the substrate chuck 3, and determines optimal parameters for the substrate according to the calculated adhesive force. Thereafter, the processing unit 130 can instruct the instruction unit 110 to operate the solenoid valve.

[0083] In addition, in a method for measuring adhesive force, multiple substrates with different characteristics and substrate chucks with different characteristics are prepared, and gas is supplied and adhesive force is measured while changing the combination. This makes it possible to obtain the relationship between the characteristics of the substrate and the characteristics of the substrate chuck and the adhesive force. Based on this relationship, the control unit 100 can provide gas supply parameters corresponding to the adhesive force.

[0084] Furthermore, in the third section (FIG. 11) where gas is supplied, a pressure sensor 71 that measures the pressure between the substrate 2 and the pin members 9 can be used to detect lateral slippage of the substrate. In the third section, the solenoid valve 72 is turned on, and the substrate 2 is held in a vacuum by the pin members 9. If an excessive amount of gas is supplied between the substrate 2 and the substrate chuck 3, the substrate 2 and the pin members 9 are pulled apart, causing the substrate 2 to slip. Air flows into the pin members 9, and the pressure in the gas flow path 70 increases. By detecting the increase in pressure in the gas flow path 70 using the pressure sensor 71, lateral slippage of the substrate can be detected.

[0085] 15 is a flowchart showing a separation method for separating the substrate 2 from the substrate chuck 3. First, an acquisition step (S110) is performed to acquire information about the adhesive force between the substrate 2 and the substrate chuck 3. Next, a supply step (S120) is performed to supply gas between the substrate 2 and the substrate chuck 3 based on the information about the adhesive force acquired in the acquisition step. Then, after the supply of gas has started in the supply step, a separation step (S130) is performed to separate the substrate 2 from the substrate chuck 3.

[0086] The substrate stage (substrate holding device) 1 of this embodiment has a substrate chuck (holding unit) 3 that holds the substrate 2, and a gas supply unit that supplies gas between the substrate 2 and the substrate chuck 3. When the substrate 2 is separated from the substrate chuck 3 that holds it, the gas supply unit supplies gas based on information regarding the adhesive force between the substrate 2 and the substrate chuck 3. This makes it possible to suppress wear on the substrate 2 and the substrate chuck 3.

[0087] Second Embodiment In the first embodiment, the adhesive force is estimated based on the characteristics of the substrate and the characteristics of the substrate chuck, etc. In the second embodiment, a method for determining the adhesive force from the measurement value of the pressure sensor 20 will be described.

[0088] The control unit 100 monitors the measurement value of the pressure sensor 20 while the substrate chuck 3 releases the vacuum suction of the substrate 2 and supplies gas. Figure 13 shows the change in pressure over time measured by the pressure sensor 20 during gas supply. Figure 13 shows the change in pressure from the start of gas supply after the release of vacuum suction. The horizontal axis represents time, and the vertical axis represents pressure. As gas is supplied, the pressure in the space between the substrate 2 and the substrate chuck 3 increases over time. When the measurement value of the pressure sensor 20 reaches zero, the pressure in the space between the substrate 2 and the substrate chuck 3 also becomes zero. From this point on, a force is generated that counteracts the adhesive force between the substrate 2 and the chuck pin of the substrate chuck 3. At a certain point, air flows in through the seal portion 60, and the pressure between the substrate 2 and the substrate chuck 3 decreases. At this time, it is assumed that the substrate 2 and the chuck pin of the substrate chuck 3 are separated, so the pressure immediately before the pressure decrease is the adhesive force. If the pressure does not decrease, it is recommended to increase the amount of gas supplied.

[0089] Based on this adhesive force, the simulation described in the first embodiment can be used to determine optimal gas supply parameters. Furthermore, because the adhesive force can be determined using the pressure sensor 20 as described above, the gas supply parameters can be optimized within the exposure apparatus without using a simulator. For example, just before the pressure measured by the pressure sensor 20 shown in FIG. 13 begins to decrease, the adhesive force is at the optimal point shown in FIG. 4(b). By stopping the gas supply just before the pressure measured by the pressure sensor 20 begins to decrease, the amount of gas supplied can also be optimized within the exposure apparatus.

[0090] Furthermore, the method of calculating the adhesive force from the measurement value of the pressure sensor 20 of this embodiment and the method of estimating the adhesive force described in the first embodiment can be used together. For example, the adhesive force may be estimated using the method described in the first embodiment, and the adhesive force may be calculated using both the estimation result and the adhesive force calculated from the measurement value of the pressure sensor 20. Specifically, a correction value may be calculated by multiplying the difference between the estimated adhesive force result and the adhesive force value calculated from the measurement value of the pressure sensor 20 by a coefficient, and the estimated adhesive force may be corrected using the calculated correction value.

[0091] Third Embodiment As described above, the fine movement stage 8 can be driven in the Z direction (first direction perpendicular to the holding surface) by a driving mechanism (not shown). Furthermore, the position of the fine movement stage 8 in the Z direction at that time can be measured by a laser interferometer (measurement unit) (not shown).

[0092] In the second embodiment, a method for calculating adhesive force from a pressure value measured by the pressure sensor 20 was described. In the third embodiment, a method for calculating adhesive force from a Z deviation will be described. The Z deviation refers to the difference between the target position of the substrate chuck 3 in the Z direction and the current position of the substrate chuck 3 in the Z direction measured by a laser interferometer (measurement unit). This is equivalent to the difference between the target position of the fine movement stage 8 in the Z direction indicated by the indication unit 110 and the position of the fine movement stage 8 in the Z direction measured by a laser interferometer (not shown). This is also equivalent to the difference between the target position of the pin members 9 in the Z direction and the position of the pin members 9 in the Z direction measured by a laser interferometer (not shown).

[0093] The adhesive force can be calculated from the Z deviation in the fourth section (FIG. 11). FIG. 12 shows the time progression of the Z deviation. In FIG. 12, D1 indicates the start time of the fourth section (the end time of the third section), and D2 indicates the end time of the fourth section (the start time of the fifth section). In this embodiment, the control unit 100 controls the fine movement stage 8 based on the Z deviation (first condition) acquired in advance. As described above, when the fine movement stage 8 is moved slowly in the −Z direction in the fourth section, adhesive force may make it difficult for the substrate 2 and the substrate chuck 3 to separate. In this case, the fine movement stage 8 cannot move to the target position instructed by the instruction unit 110 (the substrate chuck 3 or the pin members 9 cannot be moved to the target position), resulting in a difference between the target position and the actual position in the Z direction, resulting in a Z deviation. The processing unit 130 calculates the Z deviation, which is the difference between the target position in the Z direction of the fine movement stage 8, the substrate chuck 3, or the pin members 9 and the actual position in the Z direction measured by a sensor (not shown). The Z deviation is shown, for example, by waveform 17 in Fig. 12. Note that waveform 18 shows the reference Z deviation. Reference waveform 18 is a reference waveform that shows the Z deviation when fine movement stage 8 is moved without holding substrate 2.

[0094] In this embodiment, the absolute value of the Z deviation when the acquired Z deviation reaches its maximum or minimum value is defined as the Z deviation representative value. Furthermore, the representative value of the Z deviation that serves as a reference when the fine movement stage 8 is moved without the substrate 2 mounted on the substrate chuck 3 is defined as the Z deviation reference value. The maximum or minimum Z deviation is the maximum or minimum of the Z deviation representative values ​​from when the substrate 2 comes into contact with the pin members 9 to when the entire surface of the substrate 2 separates from the substrate chuck 3. The processing unit 130 calculates the absolute value of the Z deviation when the Z deviation reaches its maximum or minimum value in the acquired Z deviation waveform. This absolute value is defined as the Z deviation representative value. The adhesive force is calculated based on the difference between the representative Z deviation value and the Z deviation reference value. Based on this adhesive force, optimal gas supply parameters can be calculated by the simulation described in the first embodiment. Furthermore, because the adhesive force can be calculated based on the Z deviation, gas supply parameters can be optimized within the exposure apparatus without using a simulator. For example, if the gas supply amount and / or supply time is increased from the state shown by waveform 17 in Figure 12, the Z deviation approaches waveform 18 in Figure 12. Just before the Z deviation approaches waveform 18, the adhesion force reaches the optimum point shown in Figure 4(b). The gas supply parameters just before the Z deviation overlaps with waveform 18 are in the optimum state. In this way, the gas supply amount can also be optimized within the exposure apparatus.

[0095] This embodiment may be used in combination with the adhesion force estimation results of the first embodiment, as in the second embodiment. In addition, the second embodiment and this embodiment may be used in combination, or both the first and second embodiments may be used in combination with this embodiment.

[0096] <Fourth embodiment> In the first embodiment, the amount of gas supplied is constant (FIG. 4(a)). In the fourth embodiment, an example will be described in which the amount of gas supplied is changed depending on the elapsed time from the start of gas supply.

[0097] FIG. 5(a) shows a gas supply pattern in which the amount of gas supplied decreases over time from the start of gas supply. The adhesive force acting between the substrate 2 and the chuck pin of the substrate chuck 3 decreases over time as gas is supplied. Initially, solenoid valve 51, which supplies the largest amount of gas, is turned ON. After a predetermined time has elapsed, solenoid valve 51 is turned OFF and solenoid valve 52 is turned ON. This changes the supply amount to the second stage. After another predetermined time has elapsed, solenoid valve 52 is turned OFF and solenoid valve 53 is turned ON. This changes the supply amount to the third stage. In this way, by reducing the amount of gas supplied over time, the risk of the substrate 2 skidding can be reduced.

[0098] 5(b) illustrates an example of a change in the adhesive force between the substrate 2 and the substrate chuck 3 while gas is being supplied under the gas supply control shown in FIG. 5(a). The degree of decrease in adhesive force varies between the section where the solenoid valve 51 is turned on, the section where the solenoid valve 52 is turned on, and the section where the solenoid valve 53 is turned on.

[0099] In this way, in this embodiment, the amount of gas supplied is changed over time to aim for the adhesive force to be at the optimum point shown in Fig. 5(b). If the adhesive force becomes negative, the substrate 2 will slide sideways on the substrate chuck 3.

[0100] By supplying gas in this way and weakening the adhesive force to the optimum point, it is possible to create a state in which the substrate 2 does not slide sideways on the substrate chuck 3 and the substrate chuck 3 is not worn. The reason why the optimum point is not set to a point where the adhesive force is 0 is to leave a small amount of adhesive force remaining so that the substrate 2 does not slide sideways.

[0101] On the other hand, the gas supply flow rate can also be gradually increased over time. Furthermore, since the gas flow path 10 is in a reduced pressure state at the beginning of the gas supply, the supplied gas is instantly ejected forcefully onto the substrate 2. For example, when supplying gas to a thin substrate, if the gas supply flow rate is increased while the substrate has strong adhesive force, excessive force may be applied to the substrate in an instant, potentially damaging or warping the substrate. To reduce this risk, it is effective to gradually increase the gas supply flow rate.

[0102] As in the first embodiment, by determining in advance the adhesive forces estimated from the substrate 2 and the substrate chuck 3 and the combination of optimal gas supply parameters corresponding to the adhesive forces, it is possible to realize gas supply according to the respective characteristics. The optimal parameters may be determined using the adhesive forces determined by the methods described in the second and third embodiments, or may be determined using the adhesive forces determined by combining the first, second, and third embodiments.

[0103] Fifth Embodiment The configuration of the substrate stage 1 of the fifth embodiment will be described with reference to FIG. 6. The substrate stage 1 of the fifth embodiment has two gas flow paths in comparison with the substrate stage 1 of the first embodiment (FIG. 1). Specifically, 5 In this embodiment, a gas flow path 11 is arranged in addition to the gas flow path 10. Like the gas flow path 10, the gas flow path 11 is arranged so that gas is sucked from the vacuum pump 5 through an opening formed on the surface of the substrate chuck 3 facing the substrate 2, and so that gas is supplied from the positive pressure tank 6 through the opening. The pressure inside the gas flow path 11 is measured by a pressure sensor 21.

[0104] A regulator 42 is disposed on the gas flow path 11 between the vacuum pump 5 and the substrate chuck 3. The regulator 42 is configured to adjust the pressure in the gas flow path 11 to a desired vacuum pressure. 2The solenoid valve 32 is disposed closer to the substrate chuck 3. When the solenoid valve 32 is turned on, the vacuum pump 5 adjusts the pressure in the space between the substrate 2 and the substrate chuck 3. When the solenoid valve 32 is turned off, the pressure in the space between the substrate 2 and the substrate chuck 3 is no longer adjusted.

[0105] Regulators 64, 65, and 66 and solenoid valves 54, 55, and 56 are arranged on the gas flow path 11 between the positive pressure tank 6 and the substrate chuck 3. The regulators 64, 65, and 66 are configured to adjust the pressure supplied from the positive pressure tank 6 to the gas flow path 11. The solenoid valves 54, 55, and 56 are arranged on the gas flow path 11 on the substrate chuck 3 side of the regulators 64, 65, and 66. When the solenoid valves 54, 55, and 56 are turned on, the positive pressure tank 6 adjusts the pressure in the space between the substrate 2 and the substrate chuck 3. When the solenoid valves 54, 55, and 56 are turned off, the pressure in the space between the substrate 2 and the substrate chuck 3 is no longer adjusted. Note that, although FIG. 6 shows three sets of regulators and solenoid valves arranged on the gas flow path 11, the number of sets is not limited to a specific number. One set, four or more sets may be used. Furthermore, instead of the combination of the solenoid valve and the regulator, a servo valve whose opening / closing degree can be freely set may be arranged.

[0106] When the substrate 2 is held by the substrate chuck 3 by vacuum suction, the solenoid valves 31 and 32 are turned ON, and the solenoid valves 51, 52, 53, 54, 55, and 56 are turned OFF. This allows the pressure in the space between the substrate 2 and the substrate chuck 3 to be reduced by the vacuum pump 5. Since it is only necessary to reduce the pressure in the space between the substrate 2 and the substrate chuck 3, it is possible to turn ON either the solenoid valve 31 or the solenoid valve 32.

[0107] When the substrate 2 is released from the substrate chuck 3, the solenoid valves 31 and 32 are turned OFF, at least one of the solenoid valves 51, 52, and 53 is turned ON, and at least one of the solenoid valves 54, 55, and 56 is turned ON. This allows the pressure in the space between the substrate 2 and the substrate chuck 3 to be increased by gas from the positive pressure tank 6.

[0108] As in the first embodiment, by changing the settings of the regulators 61, 62, 63, 64, 65, and 66, it is possible to change which of the solenoid valves 51, 52, and 53 is turned on, and also to change which of the solenoid valves 54, 55, and 56 is turned on. This makes it possible to change the flow rate and pressure of the gas filling the space between the substrate 2 and the substrate chuck 3.

[0109] 7 is a plan view of the substrate chuck 3 in this embodiment as viewed from the +Z direction. An annular sealing portion 60 is provided at a position along the outer periphery of the substrate chuck 3. However, the presence, number, and arrangement of the sealing portion 60 are not limited to the example shown in FIG. 7. For example, the substrate chuck 3 may not be provided with a sealing portion. Alternatively, multiple sealing portions may be provided.

[0110] The surface of the substrate chuck 3 is provided with a plurality of protrusions (not shown), and the upper surfaces of these protrusions can serve as holding surfaces for holding the substrate 2. These protrusions are referred to as chuck pins. The substrate chuck 3 has an opening 7 connected to a gas flow path 10. The substrate chuck 3 also has an opening 80 connected to a gas flow path 11. While FIG. 7 shows six openings 7 and six openings 80, their arrangement and number are not limited to the example shown in FIG. 7. In this manner, a plurality of openings can be formed on the surface of the substrate chuck 3 facing the substrate 2. The control unit 100 can independently control the amount of gas supplied from a first opening and a second opening. Alternatively, the plurality of openings may include an opening used to supply gas and an opening not used to supply gas.

[0111] The provision of two gas flow paths is advantageous in that the gas supply amount can be set more precisely than in the first embodiment. Also, the balance between the gas supply amount from gas flow path 10 and the gas supply amount from gas flow path 11 can be changed depending on the wear state of the chuck. By changing the balance of the gas supply amount, the adhesive force between the substrate 2 and the substrate chuck 3 after gas supply changes, and local wear of the substrate chuck 3 can be prevented.

[0112] Next, a gas supply method will be described. In the first embodiment, the gas supply flow rate was controlled by turning on any one of the solenoid valves 51, 52, and 53, and the gas supply time was controlled by the time it took for the solenoid valve to be turned from on to off. In this embodiment, gas can be supplied by turning on at least one of the solenoid valves 51, 52, 53, 54, 55, and 56. By separating the systems, the flow rate of gas supplied to the space between the substrate 2 and the substrate chuck 3 can be set more precisely.

[0113] Furthermore, the number of positive pressure tanks 6 is not limited to one. For example, separate positive pressure tanks may be configured for gas flow paths 10 and 11. In this case, the amount of gas supplied can be increased, making it possible to supply an optimal amount of gas even to substrates with high adhesive strength.

[0114] The supply flow rate and supply time of the gas supplied from the gas flow path 10 to the space between the substrate 2 and the substrate chuck 3 and the supply flow rate and supply time of the gas supplied from the gas flow path 11 to the space between the substrate 2 and the substrate chuck 3 may be set separately.

[0115] Sixth Embodiment In the sixth embodiment, an example will be described in which a plurality of openings for supplying gas is provided in addition to the fifth embodiment. In the sixth embodiment, the supply of gas is changed over time. In the sixth embodiment, gas can be supplied by turning on at least one of the solenoid valves 51, 52, 53, 54, 55, and 56. Then, the solenoid valves to be turned on are switched over over time. This allows for more precise setting of the supply flow rate of gas supplied to the space between the substrate 2 and the substrate chuck 3.

[0116] Various embodiments have been described above. In all of the embodiments, the relationship between the original 203 and the original chuck configured on the original stage 204 is similar to the relationship between the substrate 2 and the substrate chuck 3. Therefore, any of the first to sixth embodiments can be applied to control the gas supply when releasing the original 203 from the original chuck.

[0117] Seventh Embodiment In the above-described embodiment, the gas supply is controlled based on information (information on ease of separation) regarding the adhesive force of the substrate relative to the holding surface, which has been obtained in advance. It is also possible to control the gas supply without based on information (information on ease of separation) regarding the adhesive force of the substrate. As described above, exposure processing jobs are input on a lot-by-lot basis, and it is assumed that the characteristics of the substrates vary from lot to lot. Therefore, the control unit 100 may set, for each lot, the control content of the gas supply via the gas flow path 10 when the substrate 2 is released from the substrate chuck 3. Alternatively, instead of setting the control content for each lot, the control unit 100 may set, for each substrate, the control content of the gas supply via the gas flow path 10 when the substrate 2 is released from the substrate chuck 3.

[0118] <Embodiment of an article manufacturing method> The article manufacturing method according to the embodiment of the present invention is suitable for manufacturing articles such as microdevices such as semiconductor devices, elements having a microstructure, etc. Fig. 16 is a flowchart of the article manufacturing method according to the present embodiment. First, a forming step (S210) is performed to form a pattern on the substrate 2. Next, an acquiring step (S220) is performed to acquire information regarding the adhesive force between the substrate 2 and the substrate chuck 3. Next, a supplying step (S230) is performed to supply gas between the substrate 2 and the substrate chuck 3 based on the information regarding the adhesive force acquired in the acquiring step. Next, after the supply of gas begins in the supplying step, a separating step (S240) is performed to separate the substrate 2 from the substrate chuck 3. Then, a processing step (S250) is performed to process the substrate 2 separated in the separating step. The processing steps may include other well-known steps (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.) The article manufacturing method of the present embodiment is advantageous over conventional methods in at least one of article performance, quality, productivity, and production costs.

[0119] The disclosure of the present specification includes at least the following techniques. (Item 1) a holder for holding the substrate; a gas supply unit that supplies a gas between the substrate and the holder, the gas supply unit supplies the gas based on information regarding an adhesive force between the substrate and the holder when the substrate is released from the holder that holds the substrate. A substrate holding device characterized by: (Item 2) 2. The substrate holding device according to item 1, wherein the information relating to the adhesive force includes at least one of a characteristic of the substrate and a characteristic of the holder. (Item 3) 3. The substrate holding device according to item 2, wherein the characteristics of the substrate include at least one of the amount of warping of the substrate, the roughness of the surface of the substrate that contacts the holding part, the type of film formed on the substrate, the material of the substrate, and the thickness of the substrate. (Item 4) 4. The substrate holding device according to item 2 or 3, wherein the characteristics of the holding part include at least one of the flatness of a holding surface that holds the substrate, the surface roughness of the holding surface, the thickness of a plurality of convex parts provided on the holding part, and the material of the holding part. (Item 5) the gas supply unit includes a pipe for flowing the gas; 5. The substrate holding device according to any one of items 1 to 4, wherein the piping is also used to reduce the pressure in the space between the substrate and the holding part in order for the holding part to hold the substrate. (Item 6) a control unit that controls the supply of the gas by the gas supply unit, 6. The substrate holding device according to any one of items 1 to 5, wherein the control unit controls at least one of the amount of gas supplied and the time period for which the gas is supplied. (Item 7) 7. The substrate holding device according to item 6, wherein the control unit controls the amount of gas supplied to vary depending on the time elapsed since the start of the supply of the gas. (Item 8) a plurality of openings for supplying the gas are formed on a surface of the holding part facing the substrate, The control unit separately controls the amount of gas supplied from a first opening among the plurality of openings and the amount of gas supplied from a second opening among the plurality of openings. 7. The substrate holding device according to item 6, (Item 9) 9. The substrate holding device according to item 8, wherein the plurality of openings include openings used for supplying gas and openings not used for supplying gas. (Item 10) a drive mechanism that drives the holder in a first direction perpendicular to a holding surface of the holder that holds the substrate; a measurement unit that measures the position of the holding unit in the first direction, the information about the adhesive force is obtained based on a difference between a target position of the holding unit in the first direction and a position of the holding unit in the first direction measured by the measurement unit. 10. The substrate holding device according to any one of items 1 to 9, wherein: (Item 11) the gas supply unit includes a pipe for flowing the gas; a pressure sensor for measuring the pressure inside the pipe; the information about the adhesive force is obtained based on the pressure measured by the pressure sensor; 11. The substrate holding device according to any one of items 1 to 10, wherein: (Item 12) a control unit that controls the supply of the gas by the gas supply unit, the control unit sets the control content of the gas supply for each lot. 12. The substrate holding device according to any one of items 1 to 11, wherein: (Item 13) a holder for holding the substrate; a control unit that controls the supply of gas between the substrate and the holder, the control unit controls the supply of the gas based on information about an adhesive force between the substrate and the holder when the substrate is released from the holder that holds the substrate. A substrate processing apparatus characterized by: (Item 14) Item 14. The substrate processing apparatus according to item 13, wherein the control unit controls the supply amount and supply time of the gas. (Item 15) Item 15. The substrate processing apparatus according to item 14, wherein the control unit controls the supply amount of the gas to be changed according to the elapsed time from the start of the supply of the gas. (Item 16) 16. The substrate processing apparatus according to any one of items 13 to 15, wherein the substrate processing apparatus is a lithography apparatus that forms a pattern on a substrate. (Item 17) A separation method for separating a substrate from a holder that holds the substrate, comprising the steps of: an acquisition step of acquiring information about the adhesive force between the substrate and the holder; a supplying step of supplying a gas between the substrate and the holder based on the information about the adhesive force acquired in the acquiring step; a separating step of separating the substrate from the holder after the supply of the gas is started in the supplying step; A separation method comprising: (Item 18) Item 18. The separation method according to item 17, wherein the information regarding the adhesive force includes at least one of a characteristic of the substrate and a characteristic of the holder. (Item 19) a forming step of forming a pattern on the substrate held by the holding unit; an acquisition step of acquiring information about the adhesive force between the substrate and the holder; a supplying step of supplying a gas between the substrate on which the pattern is formed in the forming step and the holding unit based on the information about the adhesive force acquired in the acquiring step; a separating step of separating the substrate from the holder after the supply of the gas is started in the supplying step; a processing step of processing the substrate separated in the separating step; A method for manufacturing an article, comprising: (Item 20) A substrate processing apparatus for processing a substrate, a holder having a holding surface for holding the substrate; a gas flow path arranged so that gas from a gas supply source is supplied between the substrate and the holder through an opening formed in a surface of the holder facing the substrate; a control unit that controls the supply of gas through the gas flow path and the opening based on information about ease of separation of the substrate from the holding surface when the holding unit releases the substrate; A substrate processing apparatus comprising:

[0120] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0121] 1: substrate stage, 2: substrate, 3: substrate chuck, 5: vacuum pump, 6: positive pressure tank, 8: fine movement stage, 10: gas flow path, 13: coarse movement stage, 100: control unit

Claims

1. a holder for holding the substrate; a gas supply unit that supplies a gas between the substrate and the holder; a control unit that controls the gas supply unit, When the substrate is separated from the holder, the control unit controls the amount of gas supply to be reduced based on information regarding an adhesive force between the substrate and the holder that decreases over time. A substrate holding device characterized by:

2. 2. The substrate holding device according to claim 1, wherein the control unit further controls the gas supply unit based on at least one of a characteristic of the substrate and a characteristic of the holding unit.

3. 3. The substrate holding device according to claim 2, wherein the characteristics of the substrate include at least one of the amount of warping of the substrate, the roughness of the surface of the substrate that contacts the holding portion, the type of film formed on the substrate, the material of the substrate, and the thickness of the substrate.

4. 3. The substrate holding device according to claim 2, wherein the characteristics of the holding portion include at least one of the flatness of the holding surface that holds the substrate, the surface roughness of the holding surface, the thickness of the multiple convex portions provided on the holding portion, and the material of the holding portion.

5. the gas supply unit includes a pipe for flowing the gas; 2. The substrate holding device according to claim 1, wherein the piping is also used to reduce the pressure in a space between the substrate and the holder in order for the holder to hold the substrate.

6. A substrate holding device as described in claim 1, characterized in that the control unit further controls the supply time of the gas.

7. a plurality of openings are formed in a surface of the holding portion facing the substrate, the control unit separately controls an amount of gas supplied from a first opening among the plurality of openings and an amount of gas supplied from a second opening among the plurality of openings.

2. The substrate holding device according to claim 1.

8. 8. The substrate holding device according to claim 7, wherein the plurality of openings include an opening used to supply the gas and an opening not used to supply the gas.

9. a drive mechanism that drives the holder in a first direction perpendicular to a holding surface of the holder that holds the substrate; a measurement unit that measures the position of the holding unit in the first direction, the information about the adhesive force is obtained based on a difference between a target position of the holding unit in the first direction and a position of the holding unit in the first direction measured by the measurement unit.

2. The substrate holding device according to claim 1.

10. the gas supply unit includes a pipe for flowing the gas; a pressure sensor for measuring the pressure inside the pipe; the information about the adhesive force is obtained based on the pressure measured by the pressure sensor; 2. The substrate holding device according to claim 1.

11. The control unit sets the control content of the gas supply for each lot.

2. The substrate holding device according to claim 1.

12. a holder for holding the substrate; a gas supply unit that supplies a gas between the substrate and the holder; a control unit that controls the gas supply unit, When the substrate is separated from the holder, the control unit controls the amount of gas supply to be reduced based on information regarding an adhesive force between the substrate and the holder that decreases over time. A substrate processing apparatus characterized by:

13. The substrate processing apparatus according to claim 12 , wherein the control unit further controls a supply time of the gas.

14. 14. The substrate processing apparatus according to claim 12, wherein the substrate processing apparatus is a lithography apparatus that forms a pattern on a substrate.

15. A separation method for separating a substrate from a holder that holds the substrate, comprising the steps of: an acquisition step of acquiring information about the adhesive force between the substrate and the holder; a supplying step of supplying a gas between the substrate and the holder based on the information about the adhesive force acquired in the acquiring step; a separating step of separating the substrate from the holder after the supply of the gas is started in the supplying step, The adhesive force is a force that decreases over time, In the supplying step, the amount of the gas to be supplied is reduced based on the information about the adhesive force. A separation method characterized by:

16. a forming step of forming a pattern on the substrate held by the holding unit; an acquisition step of acquiring information about the adhesive force between the substrate and the holder; a supplying step of supplying a gas between the substrate on which the pattern is formed in the forming step and the holding unit based on the information about the adhesive force acquired in the acquiring step; a separating step of separating the substrate from the holder after the supply of the gas is started in the supplying step; a processing step of processing the substrate separated in the separating step; a manufacturing step of manufacturing an article using the substrate processed in the processing step, The adhesive force is a force that decreases over time, In the supplying step, the amount of the gas to be supplied is reduced based on the information about the adhesive force. A method for manufacturing an article.

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