Temperature Control System

The temperature control system in semiconductor manufacturing equipment addresses rapid temperature adjustments by using independent circulation circuits and variable speed pumps to manage heat load fluctuations within rated device capacities, enhancing efficiency and reducing power consumption.

JP7762749B2Active Publication Date: 2025-10-30EBARA CORP
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Patent Information

Application Number
JP2024024391
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2024-02-21
Publication Date
2025-10-30
Estimated Expiration
2044-02-21

AI Technical Summary

Technical Problem

Semiconductor manufacturing equipment faces challenges in quickly adjusting to changing processing temperatures without increasing the capacity of cooling or heating devices, leading to temporary fluctuations in heat load that can exceed the rated capacity of these devices.

Method used

A temperature control system with independent circulation circuits for first and second heat media, utilizing heat exchangers and variable speed pumps to adjust flow rates dynamically based on load thresholds, allowing temporary increases in cooling or heating capacity without exceeding rated device capacities.

Benefits of technology

The system effectively manages temporary heat load fluctuations within the rated capacity of cooling and heating devices, reducing power consumption and equipment size by dynamically adjusting flow rates through independent circulation circuits and heat exchangers.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

To provide a temperature control system capable of quickly coping with a change of a target treatment temperature in a semiconductor manufacturing apparatus.SOLUTION: A temperature control system comprises: a plurality of first heat exchangers 21 for performing heat exchange between a first heat medium circulating in a first circulation circuit 11 and a third heat medium circulating in a plurality of third circulation circuits 13; and a plurality of first flow rate variation apparatuses 51 connected in series to the plurality of first heat exchangers 21, respectively, by the first circulation circuit 11. When a cooling heat load on the third heat medium flowing in one of the plurality of third circulation circuits 13 exceeds a cooling load threshold value, an operation control section 100 instructs a first flow rate variation apparatus 51 corresponding to a first heat exchanger 21 connected to the third circulation circuit 13 to increase a flow rate of the first heat medium from a rated flow rate to an excess flow rate.SELECTED DRAWING: Figure 1
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Description

[Technical Field]

[0001] The present invention relates to a temperature control system for controlling the temperature of a heat medium used in semiconductor manufacturing equipment such as an etching equipment, a CVD equipment, and a PVD equipment. [Background technology]

[0002] Semiconductor manufacturing equipment (e.g., etching equipment, CVD equipment, and PVD equipment) for manufacturing semiconductor devices is configured to perform manufacturing processes while controlling the processing temperature. For example, in etching equipment, the processing temperature of the wafer is controlled by flowing a temperature-controlled liquid as a heat medium through a flow path formed in a susceptor that supports the wafer.

[0003] The temperature of the heat medium supplied to semiconductor manufacturing equipment is adjusted directly or indirectly by a cooling device and a heating device. For example, a temperature-adjusted heat medium is generated by mixing a heat medium cooled by a cooling device with a heat medium heated by a heating device, and the heat medium is supplied to the semiconductor manufacturing equipment to adjust the processing temperature in the semiconductor manufacturing equipment. In another example, as shown in Patent Document 1, a first heat medium and a second heat medium are cooled and heated by a cooling device and a heating device, respectively, and the cooled first heat medium and the heated second heat medium are heat-exchanged with a third heat medium to adjust the temperature of the third heat medium. The third heat medium is then supplied to the semiconductor manufacturing equipment to adjust the processing temperature in the semiconductor manufacturing equipment. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent Publication No. 2021-77086 [Patent Document 2] Japanese Patent Application Laid-Open No. 2016-162794 Summary of the Invention [Problem to be solved by the invention]

[0005] During wafer processing in a semiconductor manufacturing equipment, the target processing temperature for the wafer changes depending on the processing step. For example, if the target processing temperature in the semiconductor manufacturing equipment drops during wafer processing, the temperature of the heat transfer medium supplied to the semiconductor manufacturing equipment must be quickly lowered, resulting in a temporary increase in the heat load of the cooling equipment. Similarly, if the target processing temperature in the semiconductor manufacturing equipment rises during wafer processing, the temperature of the heat transfer medium supplied to the semiconductor manufacturing equipment must be quickly raised, resulting in a temporary increase in the heat load of the heating equipment.

[0006] However, increasing the cooling capacity of the cooling device and the heating capacity of the heating device in preparation for temporary load fluctuations brings about disadvantages such as increased size and cost of the cooling device and heating device.

[0007] Therefore, the present invention provides a temperature control system that can quickly respond to changes in the target processing temperature in semiconductor manufacturing equipment without changing the rated capacity of the cooling or heating equipment. [Means for solving the problem]

[0008] In one aspect, a temperature control system for adjusting the temperature of a semiconductor manufacturing device includes a first circulation circuit through which a first heat medium circulates, a second circulation circuit that is independent of the first circulation circuit and through which a second heat medium circulates, a plurality of third circulation circuits that are independent of the first circulation circuit and the second circulation circuit and through which a third heat medium circulates, a cooling device that cools the first heat medium flowing through the first circulation circuit, a heating device that heats the second heat medium flowing through the second circulation circuit, a plurality of first heat exchangers that perform heat exchange between the first heat medium cooled by the cooling device and the third heat medium circulating through the plurality of third circulation circuits, a plurality of second heat exchangers that perform heat exchange between the second heat medium heated by the heating device and the third heat medium circulating through the plurality of third circulation circuits, and a plurality of second heat exchangers that are connected in series to the plurality of first heat exchangers by the first circulation circuit. and an operation control unit that controls operation of the plurality of first flow rate variable devices, wherein the plurality of first heat exchangers are connected in parallel by the first circulation circuit, the plurality of second heat exchangers are connected in parallel by the second circulation circuit, the plurality of first heat exchangers and the plurality of second heat exchangers constitute a plurality of sets of first heat exchangers and second heat exchangers, and the plurality of sets of first heat exchangers and second heat exchangers are connected to the plurality of third circulation circuits, respectively, and the operation control unit is configured to, when a cooling heat load on a third heat medium flowing through one of the plurality of third circulation circuits exceeds a cooling load threshold, give a command to the first flow rate variable device corresponding to the first heat exchanger connected to that third circulation circuit to increase the flow rate of the first heat medium from a rated flow rate to an excess flow rate.

[0009] According to the present invention, by increasing the flow rate of the first heat medium sent to the first heat exchanger connected to the third circulation circuit through which the third heat medium flows when the cooling load increases, the cooling capacity of the corresponding first heat exchanger can be temporarily increased. An increase in the cooling load usually occurs temporarily, and the cooling load does not increase simultaneously in all of the multiple third circulation circuits. Therefore, even if a temporary increase in the cooling load occurs, the cooling device can handle the total cooling load within its rated cooling capacity.

[0010] In one aspect, the temperature control system further includes a plurality of first heat medium outlet temperature measuring devices for measuring the cooling heat load on the third heat medium flowing through the plurality of third circulation circuits, the plurality of first heat medium outlet temperature measuring devices being connected to the first circulation circuits and arranged downstream of the plurality of first heat exchangers, the plurality of first heat medium outlet temperature measuring devices being configured to measure the temperature of the first heat medium that has passed through the plurality of first heat exchangers, and the operation control unit being configured to, when the temperature of the first heat medium that has passed through a first heat exchanger connected to one of the plurality of third circulation circuits exceeds a cooling temperature threshold, give a command to a first flow rate variable device corresponding to the first heat exchanger connected to that third circulation circuit to increase the flow rate of the first heat medium from a rated flow rate to an excess flow rate.

[0011] The temperature of the first heat medium measured by the first heat medium outlet temperature measuring device reflects the cooling heat load on the corresponding third heat medium flowing through the third circulation circuit. Therefore, the operation control unit can temporarily increase the flow rate of the first heat medium based on the measured temperature of the first heat medium. The determination of the increase in cooling heat load may be based on, in addition to the temperature of the first heat medium, an external signal, a signal from the third circulation circuit (such as a temperature or a signal from a control device on the third circulation circuit), or the like.

[0012] In one aspect, the operation control unit is configured to issue a command to the corresponding first flow rate variable device to reduce the flow rate of the first heat medium to the rated flow rate when a predetermined first flow rate increase time has elapsed since the flow rate of the first heat medium was increased to the excess flow rate.

[0013] The increase in cooling heat load on the third heat medium flowing through the third circulation circuit is temporary, and by reducing the flow rate of the first heat medium to the rated flow rate after a predetermined first flow rate increase time has elapsed, the increase in power consumption of the entire temperature control system can be suppressed. In addition to time, the condition for releasing the excessive flow rate state may also be the temperature of the first heat medium, an external signal, or a signal from the third circulation circuit side (temperature or a signal from a control device on the third circulation circuit side).

[0014] In one embodiment, the plurality of first flow rate varying devices are a plurality of first variable speed pumps connected in series to the plurality of first heat exchangers by the first circulation circuit, and the operation control unit is configured to individually control the rotational speeds of the plurality of first variable speed pumps.

[0015] According to the present invention, the operation control unit can increase the flow rate of the first heat medium sent to the first heat exchanger connected to the third circulation circuit through which the third heat medium with an increased cooling heat load flows by increasing the rotational speed of the first variable speed pump, thereby temporarily increasing the cooling capacity of the corresponding first heat exchanger.

[0016] In one embodiment, the temperature control system further includes a plurality of second flow rate variable devices connected in series to the plurality of second heat exchangers by the second circulation circuit, and the operation control unit is configured to, when the heating heat load on the third heat medium flowing through one of the plurality of third circulation circuits exceeds a heating load threshold, give a command to the second flow rate variable device corresponding to the second heat exchanger connected to that third circulation circuit to increase the flow rate of the second heat medium from the rated flow rate to an excess flow rate.

[0017] According to the present invention, by increasing the flow rate of the second heat medium sent to the second heat exchanger connected to the third circulation circuit through which the third heat medium flows when the heating load increases, the heating capacity of the corresponding second heat exchanger can be temporarily increased. Increases in heating load usually occur temporarily, and the heating load does not increase simultaneously in all of the multiple third circulation circuits. Therefore, even if a temporary increase in the heating load occurs, the heating device can handle the total heating load within its rated heating capacity.

[0018] In one embodiment, the plurality of second flow rate varying devices are a plurality of second variable speed pumps connected in series to the plurality of second heat exchangers by the second circulation circuit, and the operation control unit is configured to individually control the rotational speeds of the plurality of second variable speed pumps.

[0019] According to the present invention, the operation control unit can increase the flow rate of the second heat medium sent to the second heat exchanger connected to the third circulation circuit through which the third heat medium with an increased heating heat load flows by increasing the rotational speed of the second variable speed pump, thereby temporarily increasing the heating capacity of the corresponding second heat exchanger.

[0020] In one aspect, a temperature control system for adjusting the temperature of a semiconductor manufacturing device includes a first circulation circuit through which a first heat medium circulates, a second circulation circuit that is independent of the first circulation circuit and through which a second heat medium circulates, a plurality of third circulation circuits that are independent of the first circulation circuit and the second circulation circuit and through which a third heat medium circulates, a cooling device that cools the first heat medium flowing through the first circulation circuit, a heating device that heats the second heat medium flowing through the second circulation circuit, a plurality of first heat exchangers that perform heat exchange between the first heat medium cooled by the cooling device and the third heat medium circulating through the plurality of third circulation circuits, a plurality of second heat exchangers that perform heat exchange between the second heat medium heated by the heating device and the third heat medium circulating through the plurality of third circulation circuits, and a plurality of second heat exchangers that are connected in series to the plurality of second heat exchangers by the second circulation circuit. and an operation control unit that controls operation of the plurality of second flow rate variable devices, wherein the plurality of first heat exchangers are connected in parallel by the first circulation circuit, the plurality of second heat exchangers are connected in parallel by the second circulation circuit, the plurality of first heat exchangers and the plurality of second heat exchangers constitute a plurality of sets of first heat exchangers and second heat exchangers, and the plurality of sets of first heat exchangers and second heat exchangers are connected to the plurality of third circulation circuits, respectively, and the operation control unit is configured to, when a heating heat load on a third heat medium flowing through one of the plurality of third circulation circuits exceeds a heating load threshold, give a command to the second flow rate variable device corresponding to the second heat exchanger connected to that third circulation circuit to increase the flow rate of the second heat medium from a rated flow rate to an excess flow rate.

[0021] According to the present invention, by increasing the flow rate of the second heat medium sent to the second heat exchanger connected to the third circulation circuit through which the third heat medium flows when the heating load increases, the heating capacity of the corresponding second heat exchanger can be temporarily increased. Increases in heating load usually occur temporarily, and the heating load does not increase simultaneously in all of the multiple third circulation circuits. Therefore, even if a temporary increase in the heating load occurs, the heating device can handle the total heating load within its rated heating capacity.

[0022] In one aspect, the temperature control system further includes a plurality of second heat medium outlet temperature measuring devices for measuring the heating heat load on the third heat medium flowing through the plurality of third circulation circuits, the plurality of second heat medium outlet temperature measuring devices being connected to the second circulation circuits and arranged downstream of the plurality of second heat exchangers, and the plurality of second heat medium outlet temperature measuring devices being configured to measure the temperature of the second heat medium that has passed through the plurality of second heat exchangers, and the operation control unit being configured to, when the temperature of the second heat medium that has passed through a second heat exchanger connected to one of the plurality of third circulation circuits falls below a heating temperature threshold, give a command to a second flow rate variable device corresponding to the second heat exchanger connected to that third circulation circuit to increase the flow rate of the second heat medium from a rated flow rate to an excess flow rate.

[0023] The temperature of the second heat medium measured by the second heat medium outlet temperature measuring device reflects the heating heat load on the corresponding third heat medium flowing through the third circulation circuit. Therefore, the operation control unit can temporarily increase the flow rate of the second heat medium based on the measured temperature of the second heat medium. The determination of the heating heat load increase may be based on, in addition to the temperature of the second heat medium, an external signal, a signal from the third circulation circuit (such as a temperature or a signal from a control device on the third circulation circuit), or the like.

[0024] In one aspect, the operation control unit is configured to issue a command to the corresponding second flow rate variable device to reduce the flow rate of the second heat medium to the rated flow rate when a predetermined second flow rate increase time has elapsed since the flow rate of the second heat medium was increased to the excess flow rate.

[0025] The increase in the heating load on the third heat medium flowing through the third circulation circuit is temporary, and by reducing the flow rate of the second heat medium to the rated flow rate after a predetermined second flow rate increase time has elapsed, the increase in power consumption of the entire temperature control system can be suppressed. In addition to time, the condition for releasing the excessive flow rate state may also be the temperature of the second heat medium, an external signal, or a signal from the third circulation circuit side (temperature or a signal from a control device on the third circulation circuit side).

[0026] In one embodiment, the plurality of second flow rate varying devices are a plurality of second variable speed pumps connected in series to the plurality of second heat exchangers by the second circulation circuit, and the operation control unit is configured to individually control the rotational speeds of the plurality of second variable speed pumps.

[0027] According to the present invention, the operation control unit can increase the flow rate of the second heat medium sent to the second heat exchanger connected to the third circulation circuit through which the third heat medium with an increased heating heat load flows by increasing the rotational speed of the second variable speed pump, thereby temporarily increasing the heating capacity of the corresponding second heat exchanger.

[0028] In one aspect, the temperature control system further includes a plurality of first flow rate variable devices connected in series to the plurality of first heat exchangers by the first circulation circuit, and the operation control unit is configured to, when the cooling heat load on the third heat medium flowing through one of the plurality of third circulation circuits exceeds a cooling load threshold, give a command to the first flow rate variable device corresponding to the first heat exchanger connected to that third circulation circuit to increase the flow rate of the first heat medium from the rated flow rate to an excess flow rate.

[0029] According to the present invention, by increasing the flow rate of the first heat medium sent to the first heat exchanger connected to the third circulation circuit through which the third heat medium flows when the cooling load increases, the cooling capacity of the corresponding first heat exchanger can be temporarily increased. An increase in the cooling load usually occurs temporarily, and the cooling load does not increase simultaneously in all of the multiple third circulation circuits. Therefore, even if a temporary increase in the cooling load occurs, the cooling device can handle the total cooling load within its rated cooling capacity.

[0030] In one embodiment, the plurality of first flow rate varying devices are a plurality of first variable speed pumps connected in series to the plurality of first heat exchangers by the first circulation circuit, and the operation control unit is configured to individually control the rotational speeds of the plurality of first variable speed pumps.

[0031] According to the present invention, the operation control unit can increase the flow rate of the first heat medium sent to the first heat exchanger connected to the third circulation circuit through which the third heat medium with an increased cooling heat load flows by increasing the rotational speed of the first variable speed pump, thereby temporarily increasing the cooling capacity of the corresponding first heat exchanger. [Effects of the Invention]

[0032] According to the present invention, even if a temporary increase in heat load occurs, the cooling or heating device can handle the total heat load within its rated capacity. [Brief explanation of the drawings]

[0033] [Figure 1] FIG. 1 is a schematic diagram illustrating an embodiment of a semiconductor manufacturing system including a temperature control system and a plurality of semiconductor manufacturing tools. [Figure 2] FIG. 10 is a schematic diagram illustrating another embodiment of a semiconductor manufacturing system including a temperature control system and a plurality of semiconductor manufacturing devices. [Figure 3] FIG. 10 is a schematic diagram illustrating yet another embodiment of a semiconductor manufacturing system including a temperature control system and a plurality of semiconductor manufacturing apparatuses. [Figure 4]FIG. 10 is a schematic diagram illustrating yet another embodiment of a semiconductor manufacturing system including a temperature control system and a plurality of semiconductor manufacturing apparatuses. [Figure 5] FIG. 10 is a schematic diagram illustrating yet another embodiment of a semiconductor manufacturing system including a temperature control system and a plurality of semiconductor manufacturing apparatuses. [Figure 6] FIG. 10 is a schematic diagram illustrating yet another embodiment of a semiconductor manufacturing system including a temperature control system and a plurality of semiconductor manufacturing apparatuses. [Figure 7] FIG. 10 is a schematic diagram illustrating yet another embodiment of a semiconductor manufacturing system including a temperature control system and a plurality of semiconductor manufacturing apparatuses. [Figure 8] FIG. 10 is a schematic diagram illustrating yet another embodiment of a semiconductor manufacturing system including a temperature control system and a plurality of semiconductor manufacturing apparatuses. DETAILED DESCRIPTION OF THE INVENTION

[0034] Hereinafter, embodiments of the present invention will be described with reference to the drawings. Fig. 1 is a schematic diagram showing one embodiment of a semiconductor manufacturing system including a temperature control system 1 and multiple semiconductor manufacturing apparatuses 2. The temperature control system 1 is configured to supply a heat medium to the multiple semiconductor manufacturing apparatuses 2 (e.g., etching apparatus, CVD apparatus, PVD apparatus, etc.) to adjust the temperatures of the multiple semiconductor manufacturing apparatuses 2.

[0035] The temperature control system 1 is configured to use a first heat medium, a second heat medium, and a third heat medium to control the temperature of the heat medium used in a plurality of semiconductor manufacturing apparatuses 2. The temperature control system 1 includes a first circulation circuit 11 through which the first heat medium circulates, a second circulation circuit 12 through which the second heat medium circulates, a plurality of third circulation circuits 13 through which the third heat medium circulates, a cooling device 7 that cools the first heat medium flowing in the first circulation circuit 11, and a heating device 8 that heats the second heat medium flowing in the second circulation circuit 12.

[0036] The cooling device 7 is connected to the first circulation circuit 11. The heating device 8 is connected to the second circulation circuit 12. The temperature control system 1 includes a first pump 14 connected to the first circulation circuit 11, and the first heat medium is circulated through the first circulation circuit 11 by the first pump 14. The temperature control system 1 includes a second pump 15 connected to the second circulation circuit 12, and the second heat medium is circulated through the second circulation circuit 12 by the second pump 15.

[0037] The semiconductor manufacturing apparatuses 2 are respectively connected to the third circulation circuits 13. The third heat medium circulates through each third circulation circuit 13 and each semiconductor manufacturing apparatus 2. The processing temperature in each semiconductor manufacturing apparatus 2 is adjusted by the third heat medium flowing through the corresponding third circulation circuit 13. The temperature of the third heat medium is adjusted by the first heat medium and the second heat medium, as described below. The flow rate of the third heat medium circulating through the third circulation circuit 13 and flowing to the first heat exchanger 21 and the second heat exchanger 22 is adjusted by a pump, a valve, etc. (not shown).

[0038] The second circulation circuit 12 is independent from the first circulation circuit 11, and the multiple third circulation circuits 13 are independent from the first circulation circuit 11 and the second circulation circuit 12. That is, the first circulation circuit 11, the second circulation circuit 12, and the multiple third circulation circuits 13 form closed circuits that are independent from each other. The multiple third circulation circuits 13 also form closed circuits that are independent from each other. Therefore, the first heat medium, the second heat medium, and the third heat medium are not mixed.

[0039] Different heat media can be used for the first, second, and third heat media. For example, common brine is used as the first heat medium for cooling. Examples of brine include ethylene glycol, propylene glycol, and calcium chloride. An example of the second heat medium for heating is silicone oil. An example of the third heat medium is a fluorine-based inert liquid. The third heat medium is an insulator that is chemically stable from low to high temperatures in order to directly adjust the processing temperature within the semiconductor manufacturing equipment 2.

[0040] The lower limit usable temperature of the third heat medium is lower than the lower limit usable temperatures of the first heat medium and the second heat medium. The upper limit usable temperature of the third heat medium is higher than the upper limit usable temperatures of the first heat medium and the second heat medium. In other words, the usable temperature range of the third heat medium is wider than the usable temperature ranges of the first heat medium and the second heat medium. The usable temperature is the temperature at which the viscosity (fluidity) of the heat medium can be maintained and the heat medium does not change phase (does not boil or solidify).

[0041] The temperature control system 1 includes a first buffer tank 16 that holds a first heat medium and a second buffer tank 17 that holds a second heat medium. The first buffer tank 16 is connected to the first circulation circuit 11, and the second buffer tank 17 is connected to the second circulation circuit 12. In one embodiment, the first buffer tank 16 and the second buffer tank 17 may not be provided.

[0042] The temperature control system 1 further includes a plurality of first heat exchangers 21 and a plurality of second heat exchangers 22. The plurality of first heat exchangers 21 are connected to the first circulation circuit 11 and the plurality of third circulation circuits 13. The plurality of second heat exchangers 22 are connected to the second circulation circuit 12 and the plurality of third circulation circuits 13. The plurality of first heat exchangers 21 are configured to perform heat exchange between the first heat medium cooled by the cooling device 7 and the third heat medium circulating through the plurality of third circulation circuits 13. The plurality of second heat exchangers 22 are configured to perform heat exchange between the second heat medium heated by the heating device 8 and the third heat medium circulating through the plurality of third circulation circuits 13.

[0043] The multiple first heat exchangers 21 are connected in parallel by a first circulation circuit 11. More specifically, the first circulation circuit 11 has a first heat medium supply line 31 for supplying the first heat medium cooled by the cooling device 7 to the multiple first heat exchangers 21, a first heat medium return line 32 for returning the first heat medium that has exchanged heat with the third heat medium in the multiple first heat exchangers 21 to the cooling device 7, and multiple first branch lines 33 connected to the first heat medium supply line 31 and the first heat medium return line 32. One end of each first branch line 33 is connected to the first heat medium supply line 31, and the other end of each first branch line 33 is connected to the first heat medium return line 32.

[0044] The first heat exchangers 21 are connected to the first branch lines 33, respectively. The first heat medium cooled by the cooling device 7 is First heat medium feeding line 31 and transferred to the plurality of first heat exchangers 21 through the plurality of first branch lines 33. The first heat medium that has exchanged heat with the third heat medium in the plurality of first heat exchangers 21 passes through the plurality of first branch lines 33 and the first heat medium return line 32, and is returned to the cooling device 7 via the first buffer tank 16.

[0045] The multiple second heat exchangers 22 are connected in parallel by a second circulation circuit 12. More specifically, the second circulation circuit 12 has a second heat medium supply line 41 for supplying the second heat medium heated by the heating device 8 to the multiple second heat exchangers 22, a second heat medium return line 42 for returning the second heat medium that has exchanged heat with the third heat medium in the multiple second heat exchangers 22 to the heating device 8, and multiple second branch lines 43 connected to the second heat medium supply line 41 and the second heat medium return line 42. One end of each second branch line 43 is connected to the second heat medium supply line 41, and the other end of each second branch line 43 is connected to the second heat medium return line 42.

[0046] The second heat exchangers 22 are connected to the second branch lines 43, respectively. The second heat medium heated by the heating device 8 is Second heat medium feeding line 41and transferred to the plurality of second heat exchangers 22 through the plurality of second branch lines 43. The second heat medium that has exchanged heat with the third heat medium in the plurality of second heat exchangers 22 is returned to the heating device 8 through the plurality of second branch lines 43 and the second heat medium return line 42.

[0047] The plurality of first heat exchangers 21 and the plurality of second heat exchangers 22 constitute a plurality of sets G1, G2, G3 of first heat exchangers 21 and second heat exchangers 22. The plurality of sets G1, G2, G3 of first heat exchangers 21 and second heat exchangers 22 are respectively connected to a plurality of third circulation circuits 13. Connection The first heat exchangers 21 and second heat exchangers 22 of the multiple sets G1, G2, G3 are connected to the multiple semiconductor manufacturing equipment 2 by multiple third circulation circuits 13. The processing temperatures in the multiple semiconductor manufacturing equipment 2 are independently controlled by the third heat medium whose temperature is regulated by the first heat exchangers 21 and second heat exchangers 22 of the multiple sets G1, G2, G3.

[0048] The temperature control system 1 further includes a plurality of first flow control valves 51 as a plurality of first flow rate varying devices connected in series to the plurality of first heat exchangers 21 by a first circulation circuit 11, and an operation control unit 100 that controls the operation of the plurality of first flow control valves 51. The plurality of first flow control valves 51 are connected to a plurality of first branch lines 33. The plurality of first flow control valves 51 are located upstream of the plurality of first heat exchangers 21 and downstream of the cooling device 7 in the flow direction of the first heat medium.

[0049] The plurality of first flow control valves 51 are electrically connected to an operation control unit 100. The operation control unit 100 is configured to, when the cooling heat load on the third heat medium flowing through one of the plurality of third circulation circuits 13 exceeds a cooling load threshold, give a command to the first flow control valve 51 corresponding to the first heat exchanger 21 connected to that third circulation circuit 13 to increase the flow rate of the first heat medium from the rated flow rate to an excess flow rate.

[0050] The rated flow rate of the first heat medium is a predetermined flow rate, and the excess flow rate of the first heat medium is a flow rate higher than the rated flow rate. Because the supply temperature of the first heat medium cooled by the cooling device 7 is the same, the cooling capacity of the first heat exchanger 21 can be increased by increasing the flow rate of the first heat medium to the excess flow rate from the rated flow rate.

[0051] The operation control unit 100 includes at least one computer. 100 The operation control unit 100 includes a storage device 100a that stores programs and the like, and an arithmetic unit 100b that executes calculations according to instructions included in the programs. The storage device 100a includes a main storage device such as a random access memory (RAM) and an auxiliary storage device such as a hard disk drive (HDD) or a solid state drive (SSD). Examples of the arithmetic unit 100b include a CPU (central processing unit) and a GPU (graphics processing unit). However, the specific configuration of the operation control unit 100 is not limited to these examples.

[0052] The operation control unit 100 monitors the temperature of the first heat medium to determine whether the cooling heat load on the third heat medium flowing through each third circulation circuit 13 has exceeded a cooling load threshold. More specifically, the temperature control system 1 includes first heat medium outlet temperature measuring devices 55 for measuring the temperature of the first heat medium flowing through the plurality of first circulation circuits 11. The plurality of first heat medium outlet temperature measuring devices 55 are connected to the plurality of first branch lines 33 of the first circulation circuit 11, respectively, and are arranged downstream of the plurality of first heat exchangers 21 in the flow direction of the first heat medium. The plurality of first heat medium outlet temperature measuring devices 55 are configured to individually measure the temperature of the first heat medium that has passed through the plurality of first heat exchangers 21.

[0053] The multiple first heat medium outlet temperature measuring devices 55 are electrically connected to the operation control unit 100, and the measured values ​​of the temperature of the first heat medium are sent to the operation control unit 100. During operation of the temperature control system 1, the operation control unit 100 monitors the measured values ​​of the temperature of the first heat medium sent from the multiple first heat medium outlet temperature measuring devices 55, and determines whether the cooling heat load on the third heat medium flowing through any one of the multiple third circulation circuits 13 has exceeded a cooling load threshold value.

[0054] In this embodiment, when the temperature of the first heat medium passing through the first heat exchanger 21 connected to one of the multiple third circulation circuits 13 exceeds the cooling temperature threshold, the operation control unit 100 issues a command to the first flow control valve 51 corresponding to the first heat exchanger 21 connected to that third circulation circuit 13 to increase the flow rate of the first heat medium from the rated flow rate to an excess flow rate.

[0055] The temperature of the first heat medium measured by the first heat medium outlet temperature measuring device 55 reflects the cooling heat load on the third heat medium flowing through the corresponding third circulation circuit 13. The cooling temperature threshold value for the temperature of the first heat medium corresponds to the cooling load threshold value for the cooling heat load on the third heat medium. The operation control unit 100 determines whether the cooling heat load on the third heat medium flowing through the third circulation circuit 13 exceeds the cooling load threshold value based on a comparison between the temperature of the first heat medium and the cooling temperature threshold value. Therefore, the operation control unit 100 can issue a command to the first flow control valve 51 to temporarily increase the flow rate of the first heat medium to the corresponding first heat exchanger 21 based on the measured value of the temperature of the first heat medium.

[0056] By increasing the flow rate of the first heat medium sent to the first heat exchanger 21 connected to the third circulation circuit 13 through which the third heat medium flows when the cooling heat load has increased, it is possible to temporarily increase the cooling capacity of the corresponding first heat exchanger 21. An increase in the cooling heat load usually occurs temporarily, and the cooling heat load does not increase simultaneously in all of the multiple third circulation circuits 13. Therefore, even if a temporary increase in the cooling heat load occurs, the cooling device 7 can handle the total cooling heat load within its rated cooling capacity.

[0057] The determination of an increase in the cooling heat load for the third heat medium flowing through the third circulation circuit 13 may be based on an external signal, a signal from the third circulation circuit 13 side (temperature or a signal from a control device on the third circulation circuit 13 side), or the like, in addition to the temperature of the first heat medium. For example, the operation control unit 100 receives a signal indicating a target processing temperature in the semiconductor manufacturing equipment 2 from the semiconductor manufacturing equipment 2, and determines whether the target processing temperature in the semiconductor manufacturing equipment 2 exceeds a predetermined processing cooling temperature threshold value. under When the rotation is completed, a command is given to the first flow control valve 51 corresponding to that semiconductor manufacturing equipment 2 to increase the flow rate of the first heat medium from the rated flow rate to an excess flow rate.

[0058] 2 , the temperature control system 1 may include a third heat medium outlet temperature measuring device 58 for measuring the cooling heat load on the third heat medium flowing through the plurality of third circulation circuits 13. The plurality of third heat medium outlet temperature measuring devices 58 are connected to the plurality of third circulation circuits 13, respectively, and are arranged downstream of the plurality of first heat exchangers 21 in the flow direction of the third heat medium. The plurality of third heat medium outlet temperature measuring devices 58 are configured to individually measure the temperature of the third heat medium that has passed through the plurality of first heat exchangers 21.

[0059] The plurality of third heat medium outlet temperature measuring devices 58 are electrically connected to the operation control unit 100, and the measured values ​​of the temperature of the third heat medium are sent to the operation control unit 100. While the temperature control system 1 is in operation, the operation control unit 100 monitors the measured values ​​of the temperature of the third heat medium sent from the plurality of third heat medium outlet temperature measuring devices 58, and determines whether the cooling heat load on the third heat medium flowing through any one of the plurality of third circulation circuits 13 has exceeded a cooling load threshold value.

[0060] More specifically, when the temperature of the third heat medium passing through a first heat exchanger 21 connected to one of the plurality of third circulation circuits 13 exceeds the cooling temperature threshold, the operation control unit 100 issues a command to the first flow control valve 51 corresponding to the first heat exchanger 21 connected to that third circulation circuit 13 to increase the flow rate of the first heat medium from the rated flow rate to an excess flow rate. The temperature of the third heat medium measured by the third heat medium outlet temperature measuring device 58 reflects the cooling heat load on the third heat medium. The operation control unit 100 determines whether the cooling heat load on the third heat medium flowing through the third circulation circuit 13 exceeds the cooling load threshold based on a comparison between the temperature of the third heat medium and the cooling temperature threshold. Therefore, the operation control unit 100 can issue a command to the first flow control valve 51 to temporarily increase the flow rate of the first heat medium to the corresponding first heat exchanger 21 based on the measured value of the temperature of the third heat medium.

[0061] 1 and 2, the operation control unit 100 is configured to issue a command to the corresponding first flow control valve 51 to reduce the flow rate of the first heat medium to the rated flow rate when a predetermined first flow rate increase time has elapsed since the flow rate of the first heat medium was increased to an excessive flow rate. The increase in the cooling heat load on the third heat medium flowing through the third circulation circuit 13 is temporary, and by reducing the flow rate of the first heat medium to the rated flow rate after the predetermined first flow rate increase time has elapsed, it is possible to suppress an increase in power consumption of the entire temperature control system 1. In addition to time, the condition for returning the excessive flow rate to the rated flow rate may be the temperature of the first heat medium, a signal from the semiconductor manufacturing equipment 2, or the temperature of the third heat medium.

[0062] 3 is a schematic diagram showing yet another embodiment of a semiconductor manufacturing system including a temperature control system 1 and multiple semiconductor manufacturing apparatuses 2. The configuration and operation of this embodiment, unless otherwise specified, are the same as those of the embodiment described above with reference to FIG. 1, and therefore redundant description will be omitted. The temperature control system 1 of this embodiment includes multiple first variable speed pumps 59 instead of multiple first flow control valves 51 as multiple first flow rate varying devices connected in series to multiple first heat exchangers 21 by first circulation circuits 11. In this embodiment, the first pump 14 described above may not be provided.

[0063] The plurality of first variable speed pumps 59 are connected to the plurality of first branch lines 33, respectively. The plurality of first variable speed pumps 59 are located upstream of the plurality of first heat exchangers 21 and downstream of the cooling device 7 in the flow direction of the first heat medium. The plurality of first variable speed pumps 59 are electrically connected to an operation control unit 100. The operation control unit 100 is configured to individually control the rotation speeds of the plurality of first variable speed pumps 59.

[0064] When the temperature of the first heat medium passing through the first heat exchangers 21 connected to one of the plurality of third circulation circuits 13 exceeds the cooling temperature threshold, the operation control unit 100 increases the flow rate of the first heat medium from the rated flow rate to an excess flow rate by increasing the rotation speed of the first variable speed pump 59 corresponding to the first heat exchanger 21 connected to that third circulation circuit 13. This operation increases the flow rate of the first heat medium sent to the first heat exchanger 21 connected to the third circulation circuit 13 through which the third heat medium with an increased cooling heat load flows, and temporarily increases the cooling capacity of the corresponding first heat exchanger 21.

[0065] The operation control unit 100 is configured to reduce the flow rate of the first heat medium to the rated flow rate by reducing the rotational speed of the corresponding first variable speed pump 59 when a predetermined first flow rate increase time has elapsed since the flow rate of the first heat medium was increased to an excessive flow rate.

[0066] The plurality of third heat medium outlet temperature measuring devices 58 described with reference to FIG. 2 can also be applied to the embodiment described with reference to FIG.

[0067] FIG. 4 is a schematic diagram showing yet another embodiment of a semiconductor manufacturing system including a temperature control system 1 and multiple semiconductor manufacturing apparatuses 2. The configuration and operation of this embodiment, unless otherwise specified, are the same as those of the embodiment described above with reference to FIG. 1, and therefore redundant description will be omitted. The temperature control system 1 includes multiple second flow control valves 61 as multiple second flow rate varying devices, each connected in series to multiple second heat exchangers 22 by a second circulation circuit 12. The multiple second flow control valves 61 are connected to multiple second branch lines 43. The multiple second flow control valves 61 are located upstream of the multiple second heat exchangers 22 and downstream of the heating device 8 in the flow direction of the second heat medium.

[0068] The plurality of second flow control valves 61 are electrically connected to an operation control unit 100. The operation control unit 100 is configured to, when the heating heat load on the third heat medium flowing through one of the plurality of third circulation circuits 13 exceeds a heating load threshold, give a command to the second flow control valve 61 corresponding to the second heat exchanger 22 connected to that third circulation circuit 13 to increase the flow rate of the second heat medium from the rated flow rate to an excess flow rate.

[0069] The rated flow rate of the second heat medium is a predetermined flow rate, and the excess flow rate of the second heat medium is a flow rate higher than the rated flow rate. Because the supply temperature of the second heat medium heated by the heating device 8 is the same, the heating capacity of the second heat exchanger 22 can be increased by increasing the flow rate of the second heat medium to the second heat exchanger 22 from the rated flow rate to the excess flow rate.

[0070] The operation control unit 100 monitors the temperature of the second heat medium to determine whether the heating heat load on the third heat medium flowing through each third circulation circuit 13 has exceeded a heating load threshold. More specifically, the temperature control system 1 includes second heat medium outlet temperature measuring devices 62 for measuring the temperature of the second heat medium flowing through the plurality of second circulation circuits 12. The plurality of second heat medium outlet temperature measuring devices 62 are connected to the plurality of second branch lines 43 of the second circulation circuit 12, respectively, and are arranged downstream of the plurality of second heat exchangers 22 in the flow direction of the second heat medium. The plurality of second heat medium outlet temperature measuring devices 62 are configured to individually measure the temperature of the second heat medium that has passed through the plurality of second heat exchangers 22.

[0071] The plurality of second heat medium outlet temperature measuring devices 62 are electrically connected to the operation control unit 100, and the measured values ​​of the temperature of the second heat medium are sent to the operation control unit 100. During operation of the temperature control system 1, the operation control unit 100 monitors the measured values ​​of the temperature of the second heat medium sent from the plurality of second heat medium outlet temperature measuring devices 62, and determines whether the heating heat load on the third heat medium flowing through any one of the plurality of third circulation circuits 13 has exceeded a heating load threshold value.

[0072] In this embodiment, when the temperature of the second heat medium passing through the second heat exchanger 22 connected to one of the multiple third circulation circuits 13 falls below the heating temperature threshold, the operation control unit 100 issues a command to the second flow control valve 61 corresponding to the second heat exchanger 22 connected to that third circulation circuit 13 to increase the flow rate of the second heat medium from the rated flow rate to an excess flow rate.

[0073] The temperature of the second heat medium measured by the second heat medium outlet temperature measuring device 62 reflects the heating heat load on the third heat medium flowing through the corresponding third circulation circuit 13. The heating temperature threshold value for the temperature of the second heat medium corresponds to the heating load threshold value for the heating heat load on the third heat medium. The operation control unit 100 determines whether the heating heat load on the third heat medium flowing through the third circulation circuit 13 exceeds the heating load threshold value based on a comparison between the temperature of the second heat medium and the heating temperature threshold value. Therefore, the operation control unit 100 can issue a command to the second flow control valve 61 to temporarily increase the flow rate of the second heat medium to the corresponding second heat exchanger 22 based on the measured value of the temperature of the second heat medium.

[0074] The heating capacity can be temporarily increased by increasing the flow rate of the second heat medium sent to the second heat exchanger 22 connected to the third circulation circuit 13 through which the third heat medium flows when the heating load has increased. An increase in the heating load usually occurs temporarily, and the heating load does not increase simultaneously in all of the multiple third circulation circuits 13. Therefore, even if a temporary increase in the heating load occurs, the heating device 8 can process the total heating load within its rated heating capacity.

[0075] The determination of an increase in the heating load on the third heat medium flowing through the third circulation circuit 13 may be based on an external signal, a signal from the third circulation circuit 13 side (temperature or a signal from a control device on the third circulation circuit 13 side), or the like, in addition to the temperature of the second heat medium. For example, the operation control unit 100 receives a signal indicating a target processing temperature in the semiconductor manufacturing equipment 2 from the semiconductor manufacturing equipment 2, and determines whether the target processing temperature in the semiconductor manufacturing equipment 2 exceeds a predetermined processing heating temperature threshold value. above When the rotation is complete, a command is given to the second flow control valve 61 corresponding to that semiconductor manufacturing equipment 2 to increase the flow rate of the second heat medium from the rated flow rate to an excess flow rate.

[0076] 5 , the temperature control system 1 may include a third heat medium outlet temperature measuring device 71 for measuring the heating load on the third heat medium flowing through the plurality of third circulation circuits 13. The plurality of third heat medium outlet temperature measuring devices 71 are connected to the plurality of third circulation circuits 13, respectively, and are arranged downstream of the plurality of second heat exchangers 22 in the flow direction of the third heat medium. The plurality of third heat medium outlet temperature measuring devices 71 are configured to individually measure the temperature of the third heat medium that has passed through the plurality of second heat exchangers 22.

[0077] The plurality of third heat medium outlet temperature measuring devices 71 are electrically connected to the operation control unit 100, and the measured values ​​of the temperature of the third heat medium are sent to the operation control unit 100. During operation of the temperature control system 1, the operation control unit 100 monitors the measured values ​​of the temperature of the third heat medium sent from the plurality of third heat medium outlet temperature measuring devices 71, and determines whether the heating heat load on the third heat medium flowing through any one of the plurality of third circulation circuits 13 has exceeded a heating load threshold value.

[0078] More specifically, when the temperature of the third heat medium passing through the second heat exchanger 22 connected to one of the plurality of third circulation circuits 13 falls below the heating temperature threshold, the operation control unit 100 issues a command to the second flow control valve 61 corresponding to the second heat exchanger 22 connected to that third circulation circuit 13 to increase the flow rate of the second heat medium from the rated flow rate to an excess flow rate. 71 The temperature of the third heat medium measured by the temperature control unit 100 reflects the heating heat load on the third heat medium. The operation control unit 100 determines whether the heating heat load on the third heat medium flowing through the third circulation circuit 13 exceeds the heating temperature threshold value based on a comparison between the temperature of the third heat medium and the heating temperature threshold value. Therefore, the operation control unit 100 can issue a command to the second flow control valve 61 to temporarily increase the flow rate of the second heat medium to the corresponding second heat exchanger 22 based on the measured value of the temperature of the third heat medium.

[0079] 4 and 5, the operation control unit 100 is configured to issue a command to the corresponding second flow control valve 61 to reduce the flow rate of the second heat medium to the rated flow rate when a predetermined second flow rate increase time has elapsed since the flow rate of the second heat medium was increased to an excessive flow rate. The increase in the heating load on the third heat medium flowing through the third circulation circuit 13 is temporary, and by reducing the flow rate of the second heat medium to the rated flow rate after the predetermined second flow rate increase time has elapsed, an increase in power consumption of the entire temperature control system 1 can be suppressed. In addition to time, the condition for returning the excessive flow rate to the rated flow rate may be the temperature of the second heat medium, a signal from the semiconductor manufacturing equipment 2, or the temperature of the third heat medium.

[0080] 6 is a schematic diagram showing yet another embodiment of a semiconductor manufacturing system including a temperature control system 1 and multiple semiconductor manufacturing apparatuses 2. The configuration and operation of this embodiment, unless otherwise specified, are the same as those of the embodiment described above with reference to FIG. 4, and therefore redundant description will be omitted. The temperature control system 1 of this embodiment includes multiple second variable speed pumps 74, instead of multiple second flow control valves 61, as multiple second flow rate varying devices connected in series to multiple second heat exchangers 22 by second circulation circuits 12. In this embodiment, the second pump 15 described above may not be provided.

[0081] The second variable speed pumps 74 are respectively connected to the second branch lines 43. The second variable speed pumps 74 are located upstream of the second heat exchangers 22 and downstream of the heating device 8 in the flow direction of the second heat medium. The second variable speed pumps 74 are electrically connected to an operation control unit 100. The operation control unit 100 is configured to individually control the rotation speeds of the second variable speed pumps 74.

[0082] When the temperature of the second heat medium passing through the second heat exchangers 22 connected to one of the plurality of third circulation circuits 13 falls below the heating temperature threshold, the operation control unit 100 increases the rotation speed of the second variable speed pump 74 corresponding to the second heat exchanger 22 connected to that third circulation circuit 13, thereby increasing the flow rate of the second heat medium from the rated flow rate to an excess flow rate. This operation makes it possible to increase the flow rate of the second heat medium sent to the second heat exchanger 22 connected to the third circulation circuit 13 through which the third heat medium with an increased heating load flows, and to temporarily increase the heating capacity of the corresponding second heat exchanger 22.

[0083] The operation control unit 100 is configured to reduce the flow rate of the second heat medium to the rated flow rate by reducing the rotational speed of the corresponding second variable speed pump 74 when a predetermined second flow rate increase time has elapsed since the flow rate of the second heat medium was increased to an excessive flow rate.

[0084] The plurality of third heat medium outlet temperature measuring devices 71 described with reference to FIG. 5 can also be applied to the embodiment described with reference to FIG.

[0085] Figure 7 is a diagram showing an embodiment that combines the embodiment described with reference to Figure 1 and the embodiment described with reference to Figure 4. Figure 8 is a diagram showing an embodiment that combines the embodiment described with reference to Figure 3 and the embodiment described with reference to Figure 6. According to the embodiments shown in Figures 7 and 8, when a temporary increase in heat load occurs, the cooling device 7 or the heating device 8 can handle the total heat load within its rated capacity.

[0086] The plurality of third heat medium outlet temperature measuring devices 58 described with reference to FIG. 2 and the plurality of third heat medium outlet temperature measuring devices 71 described with reference to FIG. 5 are also applicable to the embodiments described with reference to FIGS. 7 and 8.

[0087] The above-described embodiments have been described for the purpose of enabling a person of ordinary skill in the art to practice the present invention. Various modifications of the above-described embodiments would be obvious to a person skilled in the art, and the technical concept of the present invention may be applied to other embodiments. Therefore, the present invention is not limited to the described embodiments, but is to be interpreted in the broadest scope in accordance with the technical concept defined by the claims. [Explanation of symbols]

[0088] 1. Temperature control system 2. Semiconductor manufacturing equipment 7 Cooling device 8 Heating device 11 1st circulation circuit 12 Second circulation circuit 13 Third circulation circuit 14 First Pump 15 Second pump 16. First buffer tank 17 Second buffer tank 21 1st heat exchanger 22 Second heat exchanger 31 First heat transfer line 32 First heat medium return line 33 First Branch Line 41 Second heat transfer line 42 Second heat medium return line 43 Second Branch Line 51 First flow control valve (first flow variable device) 55 1st heat medium outlet temperature measuring device 58 Third heat medium outlet temperature measuring device 59 First variable speed pump (first flow rate variable device) 61 Second flow control valve (second flow variable device) 62 Second heat medium outlet temperature measuring device 71 Third heat medium outlet temperature measuring device 74 Second variable speed pump (second flow rate variable device) 100 Operation control section

Claims

1. A temperature control system for adjusting the temperature of a semiconductor manufacturing device, comprising: a first circulation circuit through which a first heat medium circulates; a second circulation circuit independent of the first circulation circuit and through which a second heat medium circulates; a plurality of third circulation circuits independent of the first circulation circuit and the second circulation circuit, through which a third heat medium circulates; a cooling device that cools the first heat medium flowing through the first circulation circuit; a heating device that heats the second heat medium flowing through the second circulation circuit; a plurality of first heat exchangers that perform heat exchange between the first heat medium cooled by the cooling device and the third heat medium circulating through the plurality of third circulation circuits; a plurality of second heat exchangers that perform heat exchange between the second heat medium heated by the heating device and the third heat medium circulating through the plurality of third circulation circuits; a plurality of first flow rate varying devices connected in series to the plurality of first heat exchangers by the first circulation circuit; an operation control unit that controls operation of the plurality of first flow rate varying devices; the plurality of first heat exchangers are connected in parallel by the first circulation circuit; the plurality of second heat exchangers are connected in parallel by the second circulation circuit; the plurality of first heat exchangers and the plurality of second heat exchangers constitute a plurality of sets of first heat exchangers and second heat exchangers, the plurality of sets of first heat exchangers and second heat exchangers are connected to the plurality of third circulation circuits, respectively; the operation control unit is configured to, when a cooling heat load on a third heat medium flowing through one of the plurality of third circulation circuits exceeds a cooling load threshold, give a command to a first flow rate variable device corresponding to a first heat exchanger connected to that third circulation circuit to increase the flow rate of the first heat medium from a rated flow rate to an excess flow rate.

2. the temperature control system further includes a plurality of first heat medium outlet temperature measuring devices for measuring cooling heat loads on the third heat medium flowing through the plurality of third circulation circuits; the plurality of first heat medium outlet temperature measuring devices are connected to the first circulation circuit and are arranged downstream of the plurality of first heat exchangers, the plurality of first heat medium outlet temperature measuring devices are configured to measure temperatures of the first heat medium that has passed through the plurality of first heat exchangers; 2. The temperature control system according to claim 1, wherein the operation control unit is configured to, when the temperature of the first heat medium passing through a first heat exchanger connected to one of the plurality of third circulation circuits exceeds a cooling temperature threshold, give a command to a first flow rate variable device corresponding to the first heat exchanger connected to that third circulation circuit to increase the flow rate of the first heat medium from a rated flow rate to an excess flow rate.

3. 2. The temperature control system according to claim 1, wherein the operation control unit is configured to issue a command to the corresponding first flow rate variable device to reduce the flow rate of the first heat medium to the rated flow rate when a predetermined first flow rate increase time has elapsed since the flow rate of the first heat medium was increased to the excessive flow rate.

4. the plurality of first flow rate varying devices are a plurality of first variable speed pumps connected in series to the plurality of first heat exchangers by the first circulation circuits, The temperature control system according to claim 1 , wherein the operation control unit is configured to individually control the rotational speeds of the plurality of first variable speed pumps.

5. The system further includes a plurality of second flow rate varying devices connected in series to the plurality of second heat exchangers by the second circulation circuit, 2. The temperature control system according to claim 1, wherein the operation control unit is configured to, when a heating heat load on a third heat medium flowing through one of the plurality of third circulation circuits exceeds a heating load threshold, give a command to a second flow rate variable device corresponding to a second heat exchanger connected to that third circulation circuit to increase the flow rate of the second heat medium from a rated flow rate to an excess flow rate.

6. the plurality of second flow rate varying devices are a plurality of second variable speed pumps connected in series to the plurality of second heat exchangers by the second circulation circuits, The temperature control system according to claim 5 , wherein the operation control unit is configured to individually control the rotational speeds of the plurality of second variable speed pumps.

7. A temperature control system for adjusting the temperature of a semiconductor manufacturing device, comprising: a first circulation circuit through which a first heat medium circulates; a second circulation circuit independent of the first circulation circuit and through which a second heat medium circulates; a plurality of third circulation circuits independent of the first circulation circuit and the second circulation circuit, through which a third heat medium circulates; a cooling device that cools the first heat medium flowing through the first circulation circuit; a heating device that heats the second heat medium flowing through the second circulation circuit; a plurality of first heat exchangers that perform heat exchange between the first heat medium cooled by the cooling device and the third heat medium circulating through the plurality of third circulation circuits; a plurality of second heat exchangers that perform heat exchange between the second heat medium heated by the heating device and the third heat medium circulating through the plurality of third circulation circuits; a plurality of second flow rate varying devices connected in series to the plurality of second heat exchangers by the second circulation circuit; an operation control unit that controls operation of the plurality of second flow rate varying devices; the plurality of first heat exchangers are connected in parallel by the first circulation circuit; the plurality of second heat exchangers are connected in parallel by the second circulation circuit; the plurality of first heat exchangers and the plurality of second heat exchangers constitute a plurality of sets of first heat exchangers and second heat exchangers, the plurality of sets of first heat exchangers and second heat exchangers are connected to the plurality of third circulation circuits, respectively; the operation control unit is configured to, when a heating heat load on a third heat medium flowing through one of the plurality of third circulation circuits exceeds a heating load threshold, give a command to a second flow rate variable device corresponding to a second heat exchanger connected to that third circulation circuit to increase the flow rate of the second heat medium from a rated flow rate to an excess flow rate.

8. the temperature control system further includes a plurality of second heat medium outlet temperature measuring devices for measuring heating heat loads on the third heat medium flowing through the plurality of third circulation circuits; the plurality of second heat medium outlet temperature measuring devices are connected to the second circulation circuit and are arranged downstream of the plurality of second heat exchangers, the plurality of second heat medium outlet temperature measuring devices are configured to measure temperatures of the second heat medium that has passed through the plurality of second heat exchangers, 8. The temperature control system according to claim 7, wherein the operation control unit is configured to, when the temperature of the second heat medium passing through a second heat exchanger connected to one of the plurality of third circulation circuits falls below a heating temperature threshold, give a command to a second flow rate variable device corresponding to the second heat exchanger connected to that third circulation circuit to increase the flow rate of the second heat medium from a rated flow rate to an excess flow rate.

9. 8. The temperature control system according to claim 7, wherein the operation control unit is configured to issue a command to the corresponding second flow rate variable device to reduce the flow rate of the second heat medium to the rated flow rate when a predetermined second flow rate increase time has elapsed since the flow rate of the second heat medium was increased to the excess flow rate.

10. the plurality of second flow rate varying devices are a plurality of second variable speed pumps connected in series to the plurality of second heat exchangers by the second circulation circuits, The temperature control system according to claim 7 , wherein the operation control unit is configured to individually control the rotational speeds of the plurality of second variable speed pumps.

11. The system further includes a plurality of first flow rate varying devices connected in series to the plurality of first heat exchangers by the first circulation circuit, 8. The temperature control system according to claim 7, wherein the operation control unit is configured to, when a cooling heat load on a third heat medium flowing through one of the plurality of third circulation circuits exceeds a cooling load threshold, give a command to a first flow rate variable device corresponding to a first heat exchanger connected to that third circulation circuit to increase the flow rate of the first heat medium from a rated flow rate to an excess flow rate.

12. the plurality of first flow rate varying devices are a plurality of first variable speed pumps connected in series to the plurality of first heat exchangers by the first circulation circuits, The temperature control system according to claim 11 , wherein the operation control unit is configured to individually control the rotational speeds of the plurality of first variable speed pumps.

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