Sensors and Electronic Devices

Abstract

To provide a sensor that can be effectively used to sense light with an infrared ray wavelength spectrum of 1000 nm or more, and an electronic device including the sensor.SOLUTION: A sensor includes a first electrode 110 including a reflection layer, a second electrode 120 facing the first electrode 110, and a light absorption layer 130 existing between the first electrode 110 and the second electrode 120. The light absorption layer 130 has a first light absorption spectrum having an absorption peak in a first infrared wavelength region, and a second light absorption spectrum having an absorption peak in a second infrared wavelength region that is longer wavelength region than the first infrared wavelength region, and having lower absorption intensity than the first light absorption spectrum. The sensor exhibits the external quantum efficiency (EQE) spectrum amplified in the second infrared wavelength region.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to sensors and electronic devices. [Background technology]

[0002] Recently, there has been much research into infrared sensors for improving their sensitivity in low-light environments or for use in biometric recognition or authentication devices. Silicon photodiodes are used as infrared sensors. However, silicon absorbs light from the visible light wavelength spectrum to the near-infrared wavelength spectrum less than approximately 1000 nm, but has limitations in absorbing light above approximately 1000 nm. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2019-208026 Summary of the Invention [Problem to be solved by the invention]

[0004] The present invention has been made in consideration of the above-mentioned problems of the conventional art, and an object of the present invention is to provide a sensor and an electronic device including the sensor that can be effectively used to sense light in the infrared wavelength spectrum above 1000 nm. [Means for solving the problem]

[0005] In order to achieve the above object, one aspect of the present invention provides a sensor comprising a first electrode including a reflective layer, a second electrode facing the first electrode, and a light-absorbing layer located between the first electrode and the second electrode, wherein the light-absorbing layer has a first absorption spectrum having an absorption peak in a first infrared wavelength region and a second absorption spectrum having an absorption peak in a second infrared wavelength region that is longer than the first infrared wavelength region and having an absorption intensity lower than that of the first absorption spectrum, and wherein the sensor exhibits an enhanced external quantum efficiency (EQE) spectrum in the second infrared wavelength region.

[0006] The difference between the wavelength at the absorption peak of the second absorption spectrum and the wavelength at the absorption peak of the first absorption spectrum may be about 100 nm or more. The wavelength at the absorption peak of the first absorption spectrum may be between approximately 700 nm and 1000 nm, and the wavelength at the absorption peak of the second absorption spectrum may be between approximately 1000 nm and 3000 nm. The absorption intensity at the absorption peak of the first absorption spectrum and the absorption intensity at the absorption peak of the second absorption spectrum may satisfy the following relational expression 1. [Equation 1] 0.1≦Abs2 / Abs1≦0.8 In the relational expression 1, Abs1 is the absorption intensity at the absorption peak of the first absorption spectrum, and Abs2 is the absorption intensity at the absorption peak of the second absorption spectrum. The half-width of the external quantum efficiency (EQE) spectrum in the second infrared wavelength region may be narrower than the half-width of the external quantum efficiency (EQE) spectrum in the first infrared wavelength region. The half-width of the external quantum efficiency (EQE) spectrum in the second infrared wavelength region may be about 10 nm to 200 nm. The maximum external quantum efficiency (EQE) in the second infrared wavelength region may be about 4% or greater. The sensor may further include a buffer layer located at least one of between the first electrode and the light absorption layer and between the second electrode and the light absorption layer. The peak wavelength of the external quantum efficiency (EQE) spectrum in the second infrared wavelength region is controlled by the distance between the reflective layer and the second electrode, and the distance between the reflective layer and the second electrode can be controlled by at least one of the thickness of the light absorption layer and the thickness of the buffer layer. The peak wavelength of the external quantum efficiency (EQE) spectrum in the second infrared wavelength region may shift to a longer wavelength region as the distance between the reflective layer and the second electrode increases. The peak wavelength of the external quantum efficiency (EQE) spectrum in the second infrared wavelength region may shift to a longer wavelength region as the thickness of the light absorption layer increases. The peak wavelength of the external quantum efficiency (EQE) spectrum in the second infrared wavelength region may shift to a longer wavelength region as the thickness of the buffer layer increases. The light absorption layer includes a near-infrared absorbing material having absorption characteristics of the first absorption spectrum and the second absorption spectrum, and a counter material forming a p-n junction with the near-infrared absorbing material, and a peak wavelength of an external quantum efficiency (EQE) spectrum in the second infrared wavelength region can be controlled by a composition ratio of the near-infrared absorbing material and the counter material. The peak wavelength of the external quantum efficiency (EQE) spectrum in the second infrared wavelength region may shift to a longer wavelength region as the composition ratio of the near infrared absorbing material to the counter material increases. The reflective layer may include Ag, Cu, Al, Au, Ti, Cr, Ni, alloys thereof, nitrides thereof, or combinations thereof. The second electrode may include a semi-transparent layer. The first electrode and the second electrode may form a microcavity, and a peak wavelength of an external quantum efficiency (EQE) spectrum in the second infrared wavelength region may correspond to a resonant wavelength of the microcavity. The second electrode may include a transparent layer, a semi-transparent layer, or a combination thereof, and the sensor may further include an optical auxiliary layer positioned on top of the second electrode. The optical auxiliary layer may include a first optical auxiliary layer and a second optical auxiliary layer having different refractive indices. The first electrode and the second electrode, or the first electrode and the optical auxiliary layer, form a microcavity, and a peak wavelength of an external quantum efficiency (EQE) spectrum in the second infrared wavelength region may correspond to a resonant wavelength of the microcavity. The second electrode includes an inorganic nanolayer facing the light-absorbing layer, and the inorganic nanolayer may include ytterbium (Yb), calcium (Ca), potassium (K), barium (Ba), magnesium (Mg), lithium fluoride (LiF), or an alloy thereof. The sensor may further include a semiconductor substrate located below the first electrode.

[0007] A sensor according to another aspect of the present invention, made to achieve the above-mentioned object, comprises a first electrode and a second electrode facing each other, and a light-absorbing layer located between the first electrode and the second electrode, wherein the maximum absorption wavelength of the absorption spectrum of the sensor is approximately 800 nm to 990 nm, and the sensor generates a current by photoelectrically converting light in a wavelength range of approximately 1100 nm or more.

[0008] The peak wavelength of the external quantum efficiency (EQE) spectrum of the sensor may be in the range of about 1100 nm to 1800 nm, and the half width of the external quantum efficiency (EQE) spectrum of the sensor may be in the range of about 10 nm to 200 nm. The maximum external quantum efficiency (EQE) of the sensor in the wavelength region of about 1100 nm or greater may be about 4% or greater. The sensor may further include a buffer layer located at least one of between the first electrode and the light absorption layer and between the second electrode and the light absorption layer. The first electrode includes a reflective layer, and a peak wavelength of an external quantum efficiency (EQE) spectrum of the sensor can be controlled by at least one of a thickness of the light absorption layer and a thickness of the buffer layer. The sensor may further include a semiconductor substrate located below the first electrode.

[0009] In order to achieve the above object, an electronic device according to one aspect of the present invention includes the sensor. [Effects of the Invention]

[0010] The sensor of the present invention can effectively sense light in the infrared wavelength spectrum above about 1000 nm or above about 1100 nm. [Brief explanation of the drawings]

[0011] [Figure 1] 1 is a cross-sectional view illustrating an example of an infrared sensor according to an embodiment. [Figure 2] 2 is an optical spectrum of an example of the infrared sensor of FIG. 1. [Figure 3] 2 is an EQE spectrum of an example of the infrared sensor of FIG. 1. [Figure 4] FIG. 10 is a cross-sectional view illustrating another example of a sensor according to an embodiment. [Figure 5] FIG. 5 is a cross-sectional view showing an example of an optical auxiliary layer of the sensor of FIG. [Figure 6] FIG. 1 is a cross-sectional view illustrating an example of a sensor according to an embodiment. [Figure 7] FIG. 10 is a cross-sectional view illustrating another example of a sensor according to an embodiment. [Figure 8] FIG. 10 is a perspective view schematically illustrating another example of a sensor according to an embodiment. [Figure 9] FIG. 9 is a cross-sectional view schematically illustrating an example of the sensor of FIG. 8. [Figure 10] FIG. 10 is a perspective view schematically illustrating yet another example of a sensor according to an embodiment. [Figure 11] FIG. 11 is a cross-sectional view schematically illustrating an example of the sensor of FIG. [Figure 12] 1 is a schematic diagram of an electronic device according to an example. [Figure 13] 3 is an optical spectrum of the infrared sensor according to Example 1. [Figure 14] 10 is an optical spectrum of an infrared sensor according to Comparative Example 2. [Figure 15] 1 shows an EQE spectrum in the infrared wavelength region of the infrared sensor according to Example 1. [Figure 16]1 shows an EQE spectrum in the infrared wavelength region of the infrared sensor according to Example 2. [Figure 17] 10 is an EQE spectrum in the infrared wavelength region of the infrared sensor according to Example 3. [Figure 18] 10 is an EQE spectrum in the infrared wavelength region of the infrared sensor according to Example 4. [Figure 19] 10 is an EQE spectrum in the infrared wavelength region of the infrared sensor according to Example 5. [Figure 20] 10 is an EQE spectrum in the infrared wavelength region of the infrared sensor according to Example 6. [Figure 21] 10 is an EQE spectrum in the infrared wavelength region of the infrared sensor according to Example 7. [Figure 22] 10 is an EQE spectrum in the infrared wavelength region of the infrared sensor according to Example 8. [Figure 23] 10 is an EQE spectrum in the infrared wavelength region of the infrared sensor according to Example 9. [Figure 24] 10 is an EQE spectrum in the infrared wavelength region of the infrared sensor according to Example 10. [Figure 25] 10 is an EQE spectrum in the infrared wavelength region of the infrared sensor according to Example 11. [Figure 26] 10 is an EQE spectrum in the infrared wavelength region of the infrared sensor according to Example 12. [Figure 27] 13 is an EQE spectrum in the infrared wavelength region of the infrared sensor according to Example 13. [Figure 28] 10 is an EQE spectrum in the infrared wavelength region of the infrared sensor according to Example 14. [Figure 29] 10 is an EQE spectrum in the infrared wavelength region of the infrared sensor according to Example 15. [Figure 30] 10 is an EQE spectrum in the infrared wavelength region of the infrared sensor according to Example 16. [Figure 31] 10 is an EQE spectrum in the infrared wavelength region of the infrared sensor according to Example 17. [Figure 32] 1 shows an EQE spectrum in the infrared wavelength region of an infrared sensor according to Comparative Example 1. [Figure 33] 10 is an EQE spectrum in the infrared wavelength region of an infrared sensor according to Comparative Example 2. DETAILED DESCRIPTION OF THE INVENTION

[0012] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with reference to the accompanying drawings, in which: FIG. 1 is a block diagram of a semiconductor device according to an embodiment of the present invention;

[0013] In the drawings, thicknesses of multiple layers and regions are exaggerated to clearly show them. Similar parts are designated by the same reference numerals throughout the specification. When a layer, film, region, plate, or other part is said to be "on" another part, this includes not only the case where it is "immediately on" the other part, but also the case where there is another part between them. Conversely, when a part is said to be "immediately on" another part, it means that there is no other part between them.

[0014] A sensor according to one embodiment will now be described.

[0015] A sensor according to one embodiment includes a sensor that senses light in the infrared wavelength region (hereinafter referred to as an "infrared sensor"). The infrared sensor is a sensor that senses light in at least a part of the infrared wavelength region. The infrared wavelength region is, for example, greater than about 700 nm and equal to or less than 3000 nm, such as about 750 nm to 3000 nm, about 750 nm to 2000 nm, or about 750 nm to 1800 nm.

[0016] FIG. 1 is a cross-sectional view showing an example of an infrared sensor according to an embodiment, FIG. 2 is an optical spectrum of the example of the infrared sensor of FIG. 1, and FIG. 3 is an EQE spectrum of the example of the infrared sensor of FIG.

[0017] Referring to FIG. 1, an infrared sensor 100 according to this embodiment includes a first electrode 110, a second electrode 120, a light absorbing layer 130 located between the first electrode 110 and the second electrode 120, and buffer layers (140, 150).

[0018] A substrate (not shown) is disposed on the first electrode 110 side or the second electrode 120 side. As an example, the substrate is disposed on the first electrode 110 side. The substrate may be, but is not limited to, a semiconductor substrate such as a silicon substrate; a glass substrate; or a polymer substrate such as polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, polyethersulfone, or a combination thereof. The substrate may be omitted.

[0019] One of the first electrode 110 and the second electrode 120 is an anode, and the other is a cathode. For example, the first electrode 110 is an anode and the second electrode 120 is a cathode. For another example, the first electrode 110 is a cathode and the second electrode 120 is an anode.

[0020] The first electrode 110 is a reflective electrode that includes a reflective layer.

[0021] For example, the first electrode 110 may be a reflective layer containing an optically opaque material. The reflective layer may have a light transmittance of, for example, less than about 10%, such as about 8% or less, about 7% or less, about 5% or less, about 3% or less, or about 1% or less. The reflective layer may have a reflectance of, for example, about 10% or more, such as about 20% or more, about 30% or more, about 50% or more, or about 70% or more. The optically opaque material may include a metal, a metal nitride, or a combination thereof, including, but not limited to, silver (Ag), copper (Cu), aluminum (Al), gold (Au), titanium (Ti), chromium (Cr), nickel (Ni), alloys thereof, nitrides thereof (e.g., TiN), or combinations thereof. The reflective layer may be one or more layers.

[0022] For example, the first electrode 110 includes a reflective layer including an optically opaque material and a translucent layer including an optically transparent material. The reflective layer is as described above. The translucent layer has a high transmittance of about 80% or more, about 85% or more, about 88% or more, or about 90% or more and includes an optically transparent conductor. The translucent layer includes, for example, at least one of an oxide conductor, a carbon conductor, and / or a metal foil film. The oxide conductor is, for example, one or more selected from indium tin oxide (ITO), indium zinc oxide (IZO), zinc tin oxide (ZTO), aluminum tin oxide (ATO), and aluminum zinc oxide (AZO); the carbon conductor is one or more selected from graphene and carbon nanomaterials; and the metal foil film is, for example, a metal foil film formed to a thin thickness of several nanometers to several tens of nanometers, or a single-layer or multi-layer metal foil film doped with metal oxide and formed to a thin thickness of several nanometers to several tens of nanometers.

[0023] For example, the first electrode 110 is made of a reflective layer, or has a laminated structure of a reflective layer / a transparent layer or a transparent layer / a reflective layer / a transparent layer.

[0024] The second electrode 120 includes a semi-transmitting layer. The semi-transmitting layer has a light transmittance between that of the transparent layer and that of the reflective layer, typically about 10 to 70%, about 20 to 60%, or about 30 to 50%. The semi-transmitting layer selectively transmits light in a predetermined wavelength range and reflects or absorbs light in other wavelength ranges. The semi-transmitting layer includes a metal or alloy layer having a thickness of about 1 nm to 50 nm, for example, including, but not limited to, silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), magnesium-silver (Mg-Ag), magnesium-aluminum (Mg-Al), or combinations thereof.

[0025] For example, the second electrode 120 further includes an inorganic nanolayer in addition to the semi-transparent layer. The inorganic nanolayer is positioned to face the light-absorbing layer 130 and is formed, for example, with a thin thickness below the semi-transparent layer. For example, the inorganic nanolayer abuts the semi-transparent layer. The inorganic nanolayer is a very thin film having a thickness of a few nanometers, for example, about 5 nm or less, for example, about 3 nm or less, or for example, about 2 nm or less. The inorganic nanolayer has a thickness of, for example, about 1 nm to 5 nm, about 1 nm to 4 nm, about 1 nm to 3 nm, or about 1 nm to 2 nm. The inorganic nanolayer includes an inorganic material having a shallower work function than the semi-transparent layer, for example, a lanthanum group element such as ytterbium (Yb); calcium (Ca); potassium (K); barium (Ba); magnesium (Mg); lithium fluoride (LiF); or an alloy thereof. The second electrode 120 includes an inorganic nanolayer, which lowers the effective work function of the surface of the second electrode 120 facing the light-absorbing layer 130, facilitating the extraction of charges (e.g., electrons) moving from the light-absorbing layer 130 to the second electrode 120, and reduces remaining charge carriers, thereby exhibiting high charge extraction efficiency.

[0026] The light absorption layer 130 includes a near-infrared absorbing material that absorbs light in a certain wavelength range of the infrared wavelength range. The near-infrared absorbing material may be an organic material, an inorganic material, an organic-inorganic material, or a combination thereof. For example, the near-infrared absorbing material may be an organic material, such as a non-polymer or a polymer, for example, a low molecular weight compound that can be vapor-deposited.

[0027] Examples of near-infrared absorbing materials include quantum dots, polymethine compounds, cyanine compounds, phthalocyanine compounds, merocyanine compounds, naphthalocyanine compounds, immonium compounds, diimmonium compounds, triarylmethane compounds, dipyrromethene compounds, anthraquinone compounds, diquinone compounds, naphthoquinone compounds, squarylium compounds, rylene compounds, perylene compounds, pyrylium compounds, squaraine compounds, thiopyrylium compounds, diketopyrrolopyrroles, and the like. The compounds include, but are not limited to, boron-dipyrromethene compounds, nickel-dithiol complexes, croconium compounds, derivatives thereof, or combinations thereof.

[0028] For example, the near-infrared absorbing material is a compound represented by the following Chemical Formula 1:

[0029] [ka]

[0030] In the above chemical formula 1, Ar 1 is a substituted or unsubstituted C6 to C30 aromatic ring, a substituted or unsubstituted C3 to C30 heteroaromatic ring, or a combination thereof; Ar 2 is a substituted or unsubstituted C6 to C30 aromatic ring, a substituted or unsubstituted C3 to C30 heteroaromatic ring, or a combination thereof; X 1 are O, S, Se, Te, S(=O), S(=O2), NR a , C.R. b R c , or SiR d R e (where R a , R b , R c , and R d are each independently hydrogen, a C1-C6 alkyl group, a C1-C6 haloalkyl group, a C6-C12 aryl group, a C3-C12 heteroaryl group, halogen, a cyano group, or a combination thereof; L 1 and L 2 are each independently a substituted or unsubstituted C3 to C20 heteroarylene group, or a fused ring of a substituted or unsubstituted C6 to C20 arylene group and a substituted or unsubstituted C3 to C20 heteroarylene group, R 1 ~R 4 are each independently a hydrogen atom, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted silyl group, a halogen atom, or a combination thereof; R 1 and R 2 are present independently or bonded to each other to form a ring, R 3 and R 4 are present independently or bonded to each other to form a ring.

[0031] The absorption spectrum of the light absorbing layer 130 in the infrared wavelength region is substantially similar to the absorption spectrum of the near-infrared absorbing material.

[0032] 2, the absorption spectrum of the light absorption layer 130 in the infrared wavelength region has at least two peaks, including, for example, a first absorption spectrum P1 having a main absorption peak in a relatively short wavelength region of the infrared wavelength region (hereinafter referred to as the "first infrared wavelength region A1") and a second absorption spectrum P2 having a sub-absorption peak in a wavelength region longer than the first infrared wavelength region (hereinafter referred to as the "second infrared wavelength region A2"), where the height of the sub-absorption peak is lower than the height of the main absorption peak.

[0033] The first absorption spectrum P1 is the main absorption spectrum of the near-infrared absorbing substance, and the wavelength λ1 at the absorption peak of the first absorption spectrum P1 is the maximum absorption wavelength λ of the near-infrared absorbing substance. max The wavelength λ1 at the absorption peak of the first absorption spectrum P1 is, for example, between about more than 700 nm and less than 1000 nm, and within the above range, it is between about more than 700 nm and 990 nm or less, between about 750 nm and 990 nm, between about 780 nm and 990 nm, between about 800 nm and 990 nm, between about 820 nm and 990 nm, or between about 850 nm and 990 nm.

[0034] The second absorption spectrum P2 is a sub-absorption spectrum having a lower absorption intensity than the first absorption spectrum P1, and the wavelength λ2 at the absorption peak of the second absorption spectrum P2 is longer than the wavelength λ1 at the absorption peak of the first absorption spectrum P1. For example, the difference between the wavelength λ2 at the absorption peak of the second absorption spectrum P2 and the wavelength λ1 at the absorption peak of the first absorption spectrum P1 is about 100 nm or more, such as about 120 nm or more, about 150 nm or more, about 180 nm or more, about 200 nm or more, about 250 nm or more, about 300 nm or more, about 350 nm or more, about 400 nm or more, about 450 nm or more, about 500 nm or more, about 550 nm or more, about 600 nm or more, about 700 nm or more, about 800 nm or more, about 900 nm or more, or about 1000 nm or more, for example, about 120 nm to 2000 nm, about 150 nm to 2000 nm, about 180 nm to 2000 nm, about 200 nm to 2000 nm, about 250 nm to 2000 nm, about 300 nm to 2000 nm, about 350 nm to 2000 nm, about 400 nm to 2000 nm, about 450 nm to 2000 nm, about 500 nm to 2000 nm, about 550 nm to 2000 nm, about 600 nm to 2000 nm, about 700 nm to 2000 nm, about 800 nm to 2000 nm, about 900 nm to 2000 nm, or about 1000 nm to 2000 nm.

[0035] For example, the wavelength λ2 at the absorption peak of the second absorption spectrum P2 is in the range of about 1000 nm to 3000 nm, and within the above range, for example, about 1050 nm to 3000 nm, about 1100 nm to 3000 nm, about 1150 nm to 3000 nm, about 1200 nm to 3000 nm, about 1300 nm to 3000 nm, about 1050 nm to 2500 nm, about 1100 nm to 2500 nm, about 1150 nm to 25 ...300 nm to 3000 nm, about 1300 nm to 3000 nm, about 1300 nm to 3000 nm, about 1300 nm to 3000 nm, about 1300 nm to 3000 nm, about 1300 nm to 3000 nm, about 1300 nm to 3000 nm, about 1300 nm to 3000 nm, about 1300 nm to 3000 100nm to 2500nm, about 1300nm to 2500nm, about 1050nm to 2000nm, about 1100nm to 2000nm, about 1150nm to 2000nm, about 1200nm to 2000nm, about 1300nm to 2000nm, about 1050nm to 1800nm, about 1100nm to 1800nm, about 1150nm to 1800nm, about 1200nm to 1800nm, or about 1300nm to 1800nm.

[0036] The absorption intensity at the absorption peak of the first absorption spectrum P1 is greater than the absorption intensity at the absorption peak of the second absorption spectrum P2, and satisfies, for example, the following relational expression 1.

[0037] [Equation 1] 0.1≦Abs2 / Abs1≦0.8

[0038] In the above relational expression 1, Abs1 is the absorption intensity at the absorption peak of the first absorbance spectrum, Abs2 is the absorption intensity at the absorption peak of the second absorption spectrum.

[0039] As an example, the above relational expression 1 satisfies the following relational expression 1a.

[0040] [Equation 1a] 0.1≦Abs2 / Abs1≦0.6

[0041] As an example, the above relational expression 1 satisfies the following relational expression 1b.

[0042] [Equation 1b] 0.1≦Abs2 / Abs1≦0.5

[0043] As an example, the above relational expression 1 satisfies the following relational expression 1c.

[0044] [Equation 1c] 0.1≦Abs2 / Abs1≦0.3

[0045] As an example, the above relational expression 1 satisfies the following relational expression 1d.

[0046] [Equation 1d] 0.1≦Abs2 / Abs1≦0.2

[0047] On the other hand, the wavelength having the minimum reflectivity in the reflection spectrum of the light absorption layer 130 in the infrared wavelength region is the same as the wavelength λ2 of the absorption peak of the second absorption spectrum, or is within ±100 nm, ±80 nm, ±70 nm, ±50 nm, ±40 nm, ±30 nm, ±20 nm, ±10 nm, or ±5 nm.

[0048] The light absorption layer 130 is a photoelectric conversion layer that converts absorbed light into an electrical signal. The light absorption layer 130 generates a current in a predetermined wavelength range based on the above-mentioned light absorption characteristics, as will be described later.

[0049] The light-absorbing layer 130 forms a p-n junction for photoelectric conversion, and the near-infrared absorbing material described above is a p-type semiconductor or an n-type semiconductor. The light-absorbing layer 130 further includes a counter material for forming a p-n junction with the near-infrared absorbing material. For example, if the near-infrared absorbing material is a p-type semiconductor, the counter material is an n-type semiconductor. For example, if the near-infrared absorbing material is an n-type semiconductor, the counter material is a p-type semiconductor. The counter material may be, for example, an organic material, an inorganic material, or an organic / inorganic material. The counter material may be a light-absorbing material or a non-light-absorbing material.

[0050] The light-absorbing layer 130 includes a mixed layer in which a near-infrared absorbing material and a counter material are mixed in the form of a bulk heterojunction. The mixed layer includes the infrared absorbing material and the counter material at a predetermined composition ratio, where the composition ratio can be defined as the volume or thickness of the near-infrared absorbing material relative to the volume or thickness of the counter material.

[0051] For example, the near-infrared absorbing substance is contained in an amount equal to or less than the counter substance, for example, the composition ratio of the near-infrared absorbing substance to the counter substance is about 0.10 to 1.00, about 0.20 to 1.00, about 0.30 to 1.00, about 0.40 to 1.00, or about 0.50 to 1.00 within the above range.

[0052] The thickness of the light absorption layer 130 is about 50 nm to 1000 nm, and within the above range, it is about 80 nm to 1000 nm, about 100 nm to 1000 nm, about 120 nm to 1000 nm, or 150 nm to 1000 nm.

[0053] The buffer layers (140, 150) include a first buffer layer 140 located between the first electrode 110 and the light absorption layer 130, and a second buffer layer 150 located between the second electrode 120 and the light absorption layer 130. The first buffer layer 140 and the second buffer layer 150 are, independently, charge auxiliary layers that control the mobility of holes and / or electrons separated in the light absorption layer 130, or light absorption auxiliary layers that improve light absorption characteristics. For example, the first buffer layer 140 and the second buffer layer 150 are one or more selected from a hole injecting layer (HIL), a hole transporting layer (HTL), an electron blocking layer (EBL), an electron injecting layer (EIL), an electron transporting layer (ETL), a hole blocking layer (HBL), and a light absorption auxiliary layer. The first buffer layer 140 and the second buffer layer 150 each independently comprise an organic material, an inorganic material, an organic / inorganic material, or a combination thereof.

[0054] The thickness of the buffer layers (140, 150) is independently about 2 nm to 200 nm, and within the above range, about 5 nm to 200 nm, about 5 nm to 190 nm, or about 5 nm to 180 nm. At least one of the first buffer layer 140 and the second buffer layer 150 can be omitted.

[0055] The infrared sensor 100 further includes an anti-reflection layer (not shown) and / or an encapsulant (not shown) located on top of the second electrode 120 .

[0056] As described above, the infrared sensor 100 includes a first electrode 110 including a reflective layer, a second electrode 120 including a semi-transmissive layer, and the light-absorbing layer 130 and buffer layers 140 and 150 positioned therebetween, forming a microcavity structure. The microcavity structure allows incident light to be repeatedly reflected between the reflective layer and the semi-transmissive layer, which are separated by a predetermined optical length, thereby enhancing light of a predetermined wavelength spectrum. For example, light of a predetermined wavelength spectrum among the incident light is repeatedly reflected between the reflective layer and the semi-transmissive layer and modified. Of the modified light, light of a wavelength spectrum corresponding to the resonance wavelength of the microcavity is enhanced, thereby exhibiting photoelectric conversion characteristics that are amplified in a narrow wavelength range.

[0057] As described above, the absorption spectrum of the light absorption layer 130 includes a first absorption spectrum P1 having a main absorption peak in a first infrared wavelength region A1, which is a relatively short wavelength region of the infrared wavelength region, and a second absorption spectrum P2 having a sub-absorption peak in a second infrared wavelength region A2, which is a wavelength region longer than the main absorption peak.

[0058] Based on the optical characteristics of the light absorption layer 130, a microresonant structure is formed to have amplified photoelectric conversion characteristics in the second infrared wavelength region A2 having a sub-absorption peak. Therefore, the infrared sensor 100 includes a near-infrared absorbing material having a main absorption peak in a relatively short wavelength region less than about 1000 nm, and effectively converts and senses light in the relatively long wavelength region of the infrared wavelength spectrum, such as about 1000 nm or more, e.g., 1100 nm or more. This overcomes the limitations of the absorption wavelength of the near-infrared absorbing material, allowing the infrared sensor 100 to be realized and effectively utilized at a target wavelength within the infrared wavelength region where photoelectric conversion is desired.

[0059] The photoelectric conversion characteristics of the infrared sensor 100 are expressed by photoelectric conversion efficiency, which is generally evaluated by external quantum efficiency (EQE). EQE is the ratio of extracted charges to incident photons. That is, a high EQE for a given wavelength range indicates high photoelectric conversion characteristics and efficient current generation in that wavelength range.

[0060] Referring to FIG. 3, the infrared sensor 100 exhibits an amplified EQE spectrum in the second infrared wavelength region A2 due to its amplified photoelectric conversion characteristics in the second infrared wavelength region A2 having a sub-absorption peak. Here, "amplified" means that the EQE is significantly higher than the absorption intensity of the absorption spectrum in that wavelength region, and the full width half maximum (FWHM) of the EQE spectrum is significantly narrower than the full width half maximum (FWHM) of the absorption spectrum in that wavelength region, thereby enhancing detection selectivity. The full width half maximum (FWHM) of an absorption spectrum is the wavelength width corresponding to half of the absorption peak, and the full width half maximum (FWHM) of an EQE spectrum is the wavelength width corresponding to half of the EQE maximum in the EQE spectrum. For example, the amplified EQE spectrum in a microcavity structure can be confirmed by comparing it with the EQE spectrum of an infrared sensor without a microcavity structure.

[0061] As an example, the EQE maximum value (EQEmax) in the second infrared wavelength region A2 of the infrared sensor 100 is about 4% or more, and within the above range, it is about 5% or more, about 7% or more, about 10% or more, about 12% or more, about 15% or more, about 18% or more, about 20% or more, about 22% or more, about 25% or more, about 28% or more, or about 30% or more.

[0062] For example, the half width of the EQE spectrum in the second infrared wavelength region A2 of the infrared sensor 100 is narrower than the half width of the EQE spectrum in the first infrared wavelength region A1. For example, the half-width of the EQE spectrum in the second infrared wavelength region A2 of the infrared sensor 100 is approximately 300 nm or less, and within the above range, is approximately 280 nm or less, approximately 260 nm or less, approximately 240 nm or less, approximately 220 nm or less, approximately 200 nm or less, approximately 180 nm or less, approximately 160 nm or less, approximately 150 nm or less, approximately 120 nm or less, approximately 100 nm or less, approximately 10 nm to 300 nm, approximately 10 nm to 280 nm, approximately 10 nm to 260 nm, approximately 10 nm to 240 nm, approximately 10 nm to 220 nm, approximately 10 nm to 200 nm, approximately 10 nm to 180 nm, approximately 10 nm to 160 nm, approximately 10 nm to 150 nm, approximately 10 nm to 120 nm, or approximately 10 nm to 100 nm.

[0063] The infrared sensor 100 adjusts the resonant wavelength of the microcavity structure to a peak wavelength (λ ) belonging to the second infrared wavelength region A2. peak、EQE For example, an amplified EQE spectrum having a peak wavelength (λ ) belonging to the second infrared wavelength region A2 can be obtained. peak、EQE ) corresponds to the resonant wavelength of the microcavity structure. For example, the peak wavelength (λ peak、EQE ) is the same as the wavelength at the absorption peak in the absorption spectrum or the wavelength showing the minimum reflectance in the reflection spectrum, or is within ±100 nm, ±80 nm, ±70 nm, ±50 nm, ±40 nm, ±30 nm, ±20 nm, ±10 nm, or ±5 nm. peak、EQE) is, for example, in the range of about 1000 nm to 3000 nm, and within the above range, for example, about 1050 nm to 3000 nm, about 1100 nm to 3000 nm, about 1150 nm to 3000 nm, about 1200 nm to 3000 nm, about 1300 nm to 3000 nm, about 1050 nm to 2500 nm, about 1100 nm to 2500 nm, about 1150 nm to 2500 nm, about 1200 nm to 2500 nm, about The wavelength range is 1300nm to 2500nm, about 1050nm to 2000nm, about 1100nm to 2000nm, about 1150nm to 2000nm, about 1200nm to 2000nm, about 1300nm to 2000nm, about 1050nm to 1800nm, about 1100nm to 1800nm, about 1150nm to 1800nm, about 1200nm to 1800nm, or about 1300nm to 1800nm.

[0064] The peak wavelength of the EQE spectrum (λ peak、EQE ) is controlled by various factors, such as the optical path length, which is the distance between the reflective layer and the semi-transmissive layer, and / or the optical properties between the reflective layer and the semi-transmissive layer.

[0065] As an example, the peak wavelength ( λpeak、EQE ) is determined by the optical path length, and the longer the optical path length, which is the distance between the reflective layer and the semi-transparent layer, the shorter the peak wavelength (λ peak、EQE ) shifts to the long wavelength region.

[0066] As an example, in the infrared sensor 100 of FIG. 1, the peak wavelength (λ peak、EQE ) is controlled by at least one of the thickness of the light absorbing layer 130 and the thickness of the buffer layers (140, 150).

[0067] As an example, the peak wavelength (λ ) of the EQE spectrum in the second infrared wavelength region A2 peak、EQE ) is controlled by the thickness of the light absorbing layer 130. For example, as the thickness of the light absorbing layer 130 increases, the peak wavelength of the EQE spectrum in the second infrared wavelength region A2 shifts to a longer wavelength region.

[0068] As an example, the peak wavelength (λ ) of the EQE spectrum in the second infrared wavelength region A2 peak、EQE ) is controlled by the thickness of the buffer layers 140 and 150. For example, as the thickness of the buffer layers 140 and 150 increases, the peak wavelength of the EQE spectrum in the second infrared wavelength region A2 shifts to a longer wavelength region.

[0069] As an example, the peak wavelength (λ ) of the EQE spectrum in the second infrared wavelength region A2 peak、EQE ) is controlled by the sum of the thickness of the light absorbing layer 130 and the thickness of the buffer layers (140, 150). For example, as the sum of the thickness of the light absorbing layer 130 and the thickness of the buffer layers (140, 150) increases, the peak wavelength of the EQE spectrum in the second infrared wavelength region A2 shifts to a longer wavelength region.

[0070] As an example, the peak wavelength (λ ) of the EQE spectrum in the second infrared wavelength region A2 peak、EQE ) is controlled by the absorption coefficient of the near-infrared absorbing material contained in the light absorption layer 130. For example, the higher the absorption coefficient of the near-infrared absorbing material, the longer the peak wavelength of the EQE spectrum in the second infrared wavelength region A2.

[0071] As an example, the peak wavelength (λ ) of the EQE spectrum in the second infrared wavelength region A2 peak、EQE ) is controlled by the composition ratio (volume ratio or thickness ratio) of the near-infrared absorbing material to the counter material contained in the light absorption layer 130. For example, as the composition ratio (volume ratio or thickness ratio) of the near-infrared absorbing material to the counter material increases, the peak wavelength of the EQE spectrum in the second infrared wavelength region A2 shifts to a longer wavelength region.

[0072] As described above, the infrared sensor 100 according to this embodiment selects a target wavelength within the infrared wavelength range for which photoelectric conversion is desired, and has a structure for controlling such target wavelength, thereby enabling the infrared sensor 100 to be realized and effectively utilized according to the desired target wavelength. In particular, even when the target wavelength is in a long wavelength range that cannot be detected by a silicon photodiode, such as a wavelength range of about 1000 nm or more, for example, about 1100 nm or more, or about 1200 nm or more, the infrared sensor 100 can be effectively photoelectrically converted, thereby widening the range of applications for the infrared sensor 100.

[0073] FIG. 4 is a cross-sectional view showing another example of a sensor according to an embodiment, and FIG. 5 is a cross-sectional view showing an example of an optical auxiliary layer of the sensor of FIG.

[0074] Referring to FIG. 4, the infrared sensor 100 according to this embodiment includes a first electrode 110, a second electrode 120, a light absorption layer 130 located between the first electrode 110 and the second electrode 120, and buffer layers (140, 150), similar to the above-described embodiments.

[0075] However, unlike the above-described embodiments, the infrared sensor 100 according to this embodiment further includes an optical auxiliary layer 160 .

[0076] The optical auxiliary layer 160 selectively transmits light in a predetermined wavelength range among incident light and reflects and / or absorbs light in other wavelength ranges, i.e., the optical auxiliary layer 160 is a selectively transmitting layer, for example, a semi-transmitting layer.

[0077] 5, the optical auxiliary layer 160 includes a first optical auxiliary layer 160a and a second optical auxiliary layer 160b having different refractive indices. One of the first optical auxiliary layer 160a and the second optical auxiliary layer 160b is a high-refractive index layer having a refractive index of about 1.55 or more in the infrared wavelength region, for example, about 1.55 to 1.90. The other of the first optical functional layer 160a and the second optical functional layer 160b is a low-refractive index layer having a refractive index of less than about 1.55 in the infrared wavelength region, for example, about 1.20 to less than 1.55. For example, the first optical functional layer 160a may be aluminum oxide, an organic buffer material, an inorganic buffer material, or a combination thereof, and the second optical functional layer 160b may be silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof, but is not limited thereto.

[0078] The thickness of the second optical auxiliary layer 160b is the same as or thicker than the thickness of the first optical functional layer 160a, for example, the thickness of the second optical functional layer 160b is about 1.0 to 5.0 times the thickness of the first optical functional layer 160a, and within the above range, the thickness is about 1.2 to 5 times, about 2 to 5 times, or about 3 to 5 times.

[0079] The optical auxiliary layer 160 may further include additional layers (not shown) in addition to the first optical auxiliary layer 160a and the second optical auxiliary layer 160b.

[0080] Because the optical auxiliary layer 160 is a semi-transmitting layer, unlike the above-described embodiment, the second electrode 120 does not need to include a separate semi-transmitting layer. That is, the second electrode 120 is selected from a transparent layer, a semi-transmitting layer, or a combination thereof. For example, the second electrode 120 and the optical auxiliary layer 160 are each semi-transmitting layers. For example, the second electrode 120 is a transparent layer, and the optical auxiliary layer 160 is a semi-transmitting layer.

[0081] The light-transmitting layer has a high transmittance of about 80% or more, about 85% or more, about 88% or more, or about 90% or more and includes an optically transparent conductor, such as an oxide conductor such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc tin oxide (ZTO), aluminum tin oxide (ATO), or aluminum zinc oxide (AZO); a carbon conductor such as graphene and carbon nanomaterials; and / or a metal foil film formed to a thickness of a few nanometers to a few tens of nanometers, or a single-layer or multi-layer metal foil film doped with metal oxide and formed to a thickness of a few nanometers to a few tens of nanometers.

[0082] The infrared sensor 100 according to this embodiment includes a first electrode 110 including a reflective layer, a second electrode 120 including a semi-transmissive layer, and / or an optical auxiliary layer 160, and a light absorption layer 130 and buffer layers 140 and 150 positioned therebetween, thereby forming a microcavity structure, and as described above, enhances light in the wavelength spectrum corresponding to the resonant wavelength of the microcavity, thereby exhibiting photoelectric conversion characteristics that are amplified in a narrow wavelength range.

[0083] The infrared sensor 100 can be applied to various fields for sensing light in the infrared wavelength region, such as a sensor for improving the sensitivity of an image sensor in a low-light environment, a sensor for enhancing the detection capability of 3D images by widening the dynamic range for distinguishing between black and white and light and dark details, a security sensor, a vehicle sensor, or a biometric recognition sensor, such as an iris sensor, a distance sensor, a fingerprint sensor, or a vascularity sensor, but is not limited thereto. The infrared sensor 100 can be applied to, for example, a CMOS infrared sensor or a CMOS image sensor.

[0084] FIG. 6 is a cross-sectional view illustrating an example of a sensor according to an embodiment.

[0085] The sensor 300 according to this embodiment includes a semiconductor substrate 40 , an insulating layer 80 , and an infrared sensor 100 .

[0086] The semiconductor substrate 40 is a silicon substrate, and has integrated thereon a transfer transistor (not shown) and a charge storage 55. The charge storage 55 is integrated for each pixel. The charge storage 55 is electrically connected to the infrared sensor 100, and information in the charge storage 55 is transmitted by the transfer transistor.

[0087] Metal wiring (not shown) and pads (not shown) are also formed on the semiconductor substrate 40. The metal wiring and pads are made of a metal having low resistivity to reduce signal delay, such as, but not limited to, aluminum (Al), copper (Cu), silver (Ag), and alloys thereof. However, the present invention is not limited to the above structure, and the metal wiring and pads may also be located under the semiconductor substrate 40.

[0088] An insulating layer 80 is formed over the metal lines and pads. The insulating layer 80 is made of an inorganic insulating material such as silicon oxide and / or silicon nitride, or a low dielectric constant (low K) material such as SiC, SiCOH, SiCO, and SiOF. The insulating layer 80 has a trench 85 exposing the charge storage 55. The trench is filled with a fill material.

[0089] The above-described infrared sensor 100 is formed on the insulating layer 80. As described above, the infrared sensor 100 includes the first electrode 110, the second electrode 120, the light absorption layer 130, and the buffer layers (140, 150). The infrared sensor 100 optionally further includes the above-described optical auxiliary layer 160, an anti-reflection layer, and / or an encapsulant. The infrared sensor 100 has been described above. The infrared sensors 100 are arranged along rows and / or columns, for example, in a matrix shape.

[0090] A condenser lens (not shown) is further formed on the infrared sensor 100. The condenser lens controls the direction of incident light and focuses the light at one point. The condenser lens may have a cylindrical or hemispherical shape, for example, but is not limited to these.

[0091] FIG. 7 is a cross-sectional view showing another example of a sensor according to an embodiment.

[0092] The sensor according to this embodiment includes a plurality of other sensors with different functions, and the plurality of sensors with different functions are stacked along the thickness direction of the semiconductor substrate 40 .

[0093] For example, the multiple sensors with different functions may be infrared sensors and / or image sensors, and may be independently selected and combined from, for example, a sensor for improving the sensitivity of the image sensor in low-light environments, a sensor for enhancing the ability to sense three-dimensional images by widening the dynamic range for distinguishing between black and white and light and dark details, a security sensor, a vehicle sensor, a biometric recognition sensor, and an image sensor. The image sensor absorbs and senses light in the red wavelength region, the green wavelength region, the blue wavelength region, or a combination thereof.

[0094] In one example, the plurality of sensors includes two infrared sensors, such as a first infrared light sensor that senses light in the infrared range having a first wavelength within the infrared wavelength range, and a second infrared light sensor that senses infrared light having a second wavelength within the infrared wavelength range.

[0095] The first wavelength and the second wavelength are different from each other, for example, within a wavelength range of more than about 700 nm and not more than 3000 nm, for example, the difference between the first wavelength and the second wavelength is not less than about 30 nm, and within the above range, the difference is not less than about 50 nm, not less than about 70 nm, not less than about 80 nm, not less than about 90 nm.

[0096] For example, one of the first wavelength and the second wavelength belongs to a wavelength range of approximately 750 nm or more and less than 1000 nm, and the other of the first wavelength and the second wavelength belongs to a wavelength range of approximately 1000 nm to 3000 nm.

[0097] For example, the plurality of sensors may include one infrared sensor and one image sensor, for example, a stacked structure of the infrared sensor and an image sensor that senses light in the red wavelength region, the green wavelength region, the blue wavelength region, or a combination thereof.

[0098] 7, the sensor 300 according to this embodiment includes an upper sensor 200, an insulating layer 80, an infrared sensor 100, and a semiconductor substrate 40. The upper sensor 200 and the infrared sensor 100 are stacked.

[0099] The upper sensor 200 is an infrared sensor or an image sensor.

[0100] The upper sensor 200 is a photoelectric conversion element and includes a lower electrode 210, an upper electrode 220, a light-absorbing layer 230, and buffer layers (240, 250). One of the lower electrode 210 and the upper electrode 220 is an anode, and the other is a cathode. The light-absorbing layer 230 absorbs light in the infrared wavelength region or the visible wavelength region. The light in the visible wavelength region is the red wavelength region, the green wavelength region, the blue wavelength region, or a combination thereof. The infrared wavelength region absorbed by the light-absorbing layer 230 of the upper sensor 200 does not overlap with the infrared wavelength region sensed by the infrared sensor 100. The buffer layers (240, 250) are hole injection layers, hole transport layers, electron blocking layers, electron injection layers, electron transport layers, hole blocking layers, optical auxiliary layers, or a combination thereof.

[0101] The infrared sensor 100 is as described above.

[0102] An insulating layer 80 is formed between the upper sensor 200 and the infrared sensor 100. The insulating layer 80 has a trench 85 exposing the charge storage 55, and the trench 85 is filled with a filling material.

[0103] The semiconductor substrate 40 is as described above, and the charge storage 55 is electrically connected to the first electrode 110 of the infrared sensor 100 or the bottom electrode 210 of the top sensor 200 .

[0104] An insulating layer 60 is formed between the infrared sensor 100 and the semiconductor substrate 40. The insulating layer 60 has a trench 65 exposing the charge storage 55, and the trench 65 is filled with a filling material.

[0105] FIG. 8 is a perspective view that schematically shows another example of a sensor according to an embodiment, and FIG. 9 is a cross-sectional view that schematically shows the example of the sensor of FIG.

[0106] 8 and 9, a sensor 300 according to this embodiment includes a semiconductor substrate 40, an infrared sensor 100, and an image sensor 200. The image sensor 200 includes a red sensor 200a that senses light in the red wavelength region, a green sensor 200b that senses light in the green wavelength region, and a blue sensor 200c that senses light in the blue wavelength region.

[0107] The infrared sensor 100, the red sensor 200a, the green sensor 200b, and the blue sensor 200c are arranged in a direction parallel to the surface of the semiconductor substrate 40, and are each electrically connected to a charge storage 55 integrated on the semiconductor substrate 40. The infrared sensor 100, the red sensor 200a, the green sensor 200b, and the blue sensor 200c are each a photoelectric conversion element.

[0108] The infrared sensor 100 is as described above.

[0109] The red sensor 200a includes a lower electrode 210a, a red light absorption layer 230a, an upper electrode 220a, and buffer layers (240a, 250a). The green sensor 200b includes a lower electrode 210b, a green light absorption layer 230b, an upper electrode 220b, and buffer layers (240b, 250b). The blue sensor 200c includes a lower electrode 210c, a blue light absorption layer 230c, an upper electrode 220c, and buffer layers (240c, 250c). The red light absorption layer 230a selectively absorbs light in the red wavelength region for photoelectric conversion, the green light absorption layer 230b selectively absorbs light in the green wavelength region for photoelectric conversion, and the blue light absorption layer 230c selectively absorbs light in the blue wavelength region for photoelectric conversion. The lower electrodes (210a, 210b, 210c) and upper electrodes (220a, 220b, 220c) are each light-transmitting electrodes. The red light-absorbing layer 230a, the green light-absorbing layer 230b, and the blue light-absorbing layer 230c each independently include an inorganic light-absorbing material, an organic light-absorbing material, an organic / inorganic light-absorbing material, or a combination thereof. For example, at least one of the red light-absorbing layer 230a, the green light-absorbing layer 230b, and the blue light-absorbing layer 230c includes an organic light-absorbing material. At least one of the buffer layers (240a, 240b, 240c, 250a, 250b, 250c) can be omitted.

[0110] FIG. 10 is a perspective view that schematically shows yet another example of a sensor according to an embodiment, and FIG. 11 is a cross-sectional view that schematically shows the example of the sensor of FIG.

[0111] 10 and 11, the sensor 300 according to this embodiment includes a semiconductor substrate 40, an infrared sensor 100, an image sensor 200, and an insulating layer 80.

[0112] The image sensor 200 includes a red sensor 200a that senses light in the red wavelength region, a green sensor 200b that senses light in the green wavelength region, and a blue sensor 200c that senses light in the blue wavelength region.

[0113] The infrared sensor 100 and the image sensor 200 are stacked along the thickness direction of the semiconductor substrate 40. For example, the infrared sensor 100 is located at the bottom and the image sensor 200 is located at the top. Although the drawing exemplarily shows a structure in which the red sensor 200a, the green sensor 200b, and the blue sensor 200c are stacked in this order, the stacking order of the red sensor 200a, the green sensor 200b, and the blue sensor 200c may vary.

[0114] The infrared sensor 100, the red sensor 200a, the green sensor 200b, and the blue sensor 200c are as described above.

[0115] The infrared sensor 100, the red sensor 200a, the green sensor 200b, and the blue sensor 200c are each electrically connected to a charge storage 55 integrated in the semiconductor substrate 40. Insulating layers (80a, 80b, 80c, 80d) are located between the semiconductor substrate 40 and the infrared sensor 100, and between the infrared sensor 100 and the image sensor 200, respectively.

[0116] The sensors described above may be applied to a variety of electronic devices, including, but not limited to, mobile phones, digital cameras, biometric recognition devices, security devices, and / or automotive electronic components.

[0117] FIG. 12 is a schematic diagram of an electronic device according to an example.

[0118] 12, electronic device 1300 includes a processor 1320, a memory 1330, a sensor 1340, and a display device 1350, electrically connected via a bus 1310. Sensor 1340 is sensor 300 described above. Processor 1320 executes stored programs to perform one or more functions. Processor 1320 further executes the stored programs to display an image on display device 1350. Processor 1320 generates an output.

[0119] The above-described embodiments will be described in more detail below with reference to examples. However, the following examples are for illustrative purposes only and are not intended to limit the scope of the invention.

[0120] Example: Manufacturing of an infrared sensor

[0121] <Examples 1 to 17>

[0122] A triphenylamine derivative is deposited on the Ag reflector to form a lower buffer layer. Subsequently, tin naphthaloxyanine (NIR absorbing material (A), p-type semiconductor) and C60 (counter material (B), n-type semiconductor) are co-deposited on the lower buffer layer to the thickness ratio (volume ratio) listed in Table 1 to form a light-absorbing layer. Subsequently, C60 is deposited on the light-absorbing layer to form an upper buffer layer, and silver (Ag) is deposited to a thickness of 30 nm on top to form a top electrode. Subsequently, 100 nm of aluminum oxide (Al2O3) and 200 nm of silicon oxynitride (SiON) are sequentially deposited on the top electrode to complete the infrared sensor.

[0123] The thicknesses of the lower buffer layer, the light-absorbing layer, and the upper buffer layer, as well as the composition ratio (thickness ratio) within the light-absorbing layer, are shown in Table 1.

[0124] [Table 1]

[0125] <Examples 18 to 20>

[0126] An infrared sensor was manufactured in the same manner as in Example 1, except that instead of evaporating silver (Ag), ITO was sputtered to form a 7 nm thick upper electrode, and aluminum oxide (Al2O3) and silicon oxynitride (SiON) were sequentially evaporated thereon to the thicknesses listed in Table 2.

[0127] [Table 2]

[0128] <Comparative Example 1>

[0129] ITO is sputtered onto a glass substrate to form a 150 nm thick bottom electrode. A triphenylamine derivative is then deposited on the ITO electrode to form a 10 nm thick bottom buffer layer. A 330 nm thick light-absorbing layer is then formed on the bottom buffer layer by co-depositing tin naphthaloxyanine (near-infrared absorbing material (A), a p-type semiconductor) and C60 (counter material (B), an n-type semiconductor) in a thickness ratio of 80:250. C60 is then deposited on the light-absorbing layer to form a 30 nm thick top buffer layer, and ITO is sputtered on top to form a 7 nm thick top electrode. Aluminum oxide (Al2O3) 100 nm and silicon oxynitride (SiON) 200 nm are then sequentially deposited on the top electrode to complete the infrared sensor.

[0130] <Comparative Example 2>

[0131] An infrared sensor was manufactured in the same manner as in Example 1, except that silicon naphthalocyanine was used instead of tin naphthalocyanine.

[0132] <Rating I>

[0133] The optical spectra in the infrared wavelength region of the infrared sensors according to the example and comparative example will be evaluated.

[0134] FIG. 13 shows the optical spectrum of the infrared sensor according to Example 1, and FIG. 14 shows the optical spectrum of the infrared sensor according to Comparative Example 2.

[0135] Referring to FIG. 13, the absorption spectrum of the infrared sensor according to Example 1 has a maximum absorption wavelength λ in the wavelength region of about more than 700 nm and less than 1000 nm. maxand a sub-absorption spectrum having a predetermined absorption intensity (Abs2 / Abs1≧0.1) in the wavelength region of about 1100 nm or more.

[0136] On the other hand, referring to FIG. 14, the absorption spectrum of the infrared sensor according to Comparative Example 2 has a maximum absorption wavelength λ in the wavelength region of more than about 700 nm and less than 1000 nm. max It can be confirmed that the compound has a main absorption spectrum having the following formula:

[0137] <Evaluation II>

[0138] The photoelectric conversion efficiency and sensing selectivity of the infrared sensors according to the examples and comparative examples are evaluated.

[0139] The photoelectric conversion efficiency is evaluated by the EQE maximum value (EQEmax) in the EQE spectrum, and is evaluated by the incident photon to current efficiency (IPCE) method in the wavelength range of 800 nm to 1500 nm at 3 V.

[0140] The sensitivity of the sensor is evaluated by the full width at half maximum (FWHM) of the EQE spectrum appearing in the wavelength region above 1000 nm.

[0141] The results are shown in Table 3 and Figures 15 to 33.

[0142] 15 to 31 show the EQE spectra in the infrared wavelength region of the infrared sensors according to Examples 1 to 17, respectively. FIG. 32 shows the EQE spectrum in the infrared wavelength region of the infrared sensor according to Comparative Example 1. FIG. 33 shows the EQE spectrum in the infrared wavelength region of the infrared sensor according to Comparative Example 2.

[0143] [Table 3]

[0144] 15 to 33, it can be seen that the infrared sensors according to the examples, unlike the infrared sensors according to the comparative examples, exhibit an EQE spectrum that is amplified in the wavelength region of more than about 1000 nm.

[0145] Furthermore, when comparing the EQE spectra of the infrared sensors according to Examples 1, 2, and 4 to 6, it can be seen that the peak wavelength of the EQE spectrum shifts depending on the thickness of the lower buffer layer. Specifically, it can be seen that the thicker the lower buffer layer is, the longer the peak wavelength of the EQE spectrum shifts to the longer wavelength region.

[0146] Furthermore, when comparing the EQE spectra of the infrared sensors according to Examples 7 to 9, 14, and 15, it can be seen that the peak wavelength of the EQE spectrum shifts depending on the thickness of the upper buffer layer; specifically, it can be seen that the thicker the upper buffer layer, the longer the peak wavelength of the EQE spectrum shifts to the longer wavelength region.

[0147] Furthermore, when comparing the EQE spectra of the infrared sensors according to Examples 10 to 13, it can be confirmed that the peak wavelength of the EQE spectrum shifts depending on the thickness of the light-absorbing layer. Specifically, it can be confirmed that the thicker the light-absorbing layer, the longer the peak wavelength of the EQE spectrum shifts to the longer wavelength region.

[0148] Furthermore, when the EQE spectra of the infrared sensors according to Examples 2 and 3 are compared, it can be confirmed that the peak wavelength of the EQE spectrum shifts depending on the composition ratio of the light-absorbing layer. Specifically, it can be confirmed that the peak wavelength of the EQE spectrum shifts to the longer wavelength region as the composition ratio of the near-infrared absorbing material in the light-absorbing layer increases.

[0149] Furthermore, when comparing the EQE spectra of the infrared sensors according to Examples 18 to 20, it can be seen that the peak wavelength of the EQE spectrum shifts depending on the thickness ratio of the optical auxiliary layer. Specifically, it can be seen that the peak wavelength of the EQE spectrum shifts to the longer wavelength region as the thickness ratio of the high refractive index layer to the low refractive index layer increases.

[0150] Although the embodiments of the present invention have been described in detail above with reference to the drawings, the present invention is not limited to the above-described embodiments and can be modified in various ways without departing from the technical concept of the present invention. [Explanation of symbols]

[0151] 40 Semiconductor substrate 55 Charge Storage 60, 80 insulating layer 65, 85 trenches 80a, 80b, 80c, 80d insulating layers 100 Infrared Sensor 110 1st electrode 120 2nd electrode 130, 230 light absorption layer 140, 150, 240, 240a, 240b, 240c, 250, 250a, 250b, 250c buffer layer 160 Optical auxiliary layer 160a, 160b 1st and 2nd optical auxiliary layer 200 Upper sensor, image sensor 200a, 200b, 200c Red, Blue, Green Sensors 210, 210a, 210b, 210c bottom electrode 220, 220a, 220b, 220c upper electrode 230a, 230b, 230c red, blue, green absorption layer 300, 1340 sensors 350 Optical Filter 1300 Electronic equipment 1310 Bus 1320 processor 1330 memory 1350 indicates the device

Claims

1. A sensor, a first electrode including a reflective layer; a second electrode facing the first electrode and including a semi-transparent layer having a light transmittance of 10 to 70% that selectively transmits light in a predetermined wavelength range of incident light and reflects or absorbs light in other wavelength ranges; a light-absorbing layer located between the first electrode and the second electrode; the first electrode and the second electrode form a microcavity; the light absorption layer has light absorption characteristics of a first absorption spectrum having a first absorption peak in a first infrared wavelength region, and a second absorption spectrum having a second absorption peak in a second infrared wavelength region that is a wavelength region longer than the first infrared wavelength region, having an absorption intensity lower than that of the first absorption spectrum, and not at least partially overlapping with the first absorption spectrum; the sensor exhibits an enhanced external quantum efficiency (EQE) spectrum in the second infrared wavelength region; The wavelength of the first absorption peak of the first absorption spectrum is greater than 700 nm and less than 1000 nm; the wavelength of the second absorption peak of the second absorption spectrum is in the range of 1000 nm to 3000 nm; Here, the amplified external quantum efficiency (EQE) spectrum in the second infrared wavelength region means that the external quantum efficiency (EQE) of the external quantum efficiency (EQE) spectrum in the second infrared wavelength region is higher than the external quantum efficiency (EQE) corresponding to the absorption intensity of the second absorption spectrum in the second infrared wavelength region in a structure that does not form the microcavity, and the half-width of the external quantum efficiency (EQE) spectrum is narrower than the half-width of the second absorption spectrum in the second infrared wavelength region.

2. 2. The sensor according to claim 1, wherein a difference between the wavelength at the second absorption peak of the second absorption spectrum and the wavelength at the first absorption peak of the first absorption spectrum is 100 nm or more.

3. 2. The sensor according to claim 1, wherein a first absorption intensity at a first absorption peak of the first absorption spectrum and a second absorption intensity at a second absorption peak of the second absorption spectrum satisfy the following relational expression 1: [Relationship 1] 0.1≦Abs ２ / Abs １ ≦0.8 In the above-mentioned relational expression 1, Abs １ is a first absorption intensity at a first absorption peak of the first absorption spectrum, Abs ２ is the second absorption intensity at the second absorption peak of the second absorption spectrum.

4. 2. The sensor of claim 1, wherein a half-width of an external quantum efficiency (EQE) spectrum in the second infrared wavelength region is narrower than a half-width of an external quantum efficiency (EQE) spectrum in the first infrared wavelength region.

5. 2. The sensor according to claim 1, wherein the half-width of the external quantum efficiency (EQE) spectrum in the second infrared wavelength region is 10 nm to 200 nm.

6. 2. The sensor according to claim 1, wherein the maximum external quantum efficiency (EQE) in the second infrared wavelength range is 4% or more.

7. The sensor of claim 1 , further comprising a buffer layer positioned at least one of between the first electrode and the light absorption layer and between the second electrode and the light absorption layer.

8. a peak wavelength of an external quantum efficiency (EQE) spectrum in the second infrared wavelength region is controlled by a distance between the reflective layer and the second electrode; 8. The sensor of claim 7, wherein the distance between the reflective layer and the second electrode is controlled by at least one of the thickness of the light absorption layer and the thickness of the buffer layer.

9. a peak wavelength of an external quantum efficiency (EQE) spectrum in the second infrared wavelength region shifts to a longer wavelength region as the distance between the reflective layer and the second electrode increases; 9. The sensor of claim 8, wherein the magnitude of a peak wavelength of an external quantum efficiency (EQE) spectrum in the second infrared wavelength region is proportional to the distance between the reflective layer and the second electrode.

10. 9. The sensor of claim 8, wherein the peak wavelength of the external quantum efficiency (EQE) spectrum in the second infrared wavelength region shifts to a longer wavelength region in proportion to the thickness of the light absorption layer as the thickness of the light absorption layer increases.

11. 9. The sensor of claim 8, wherein the peak wavelength of the external quantum efficiency (EQE) spectrum in the second infrared wavelength region shifts to a longer wavelength region in proportion to the thickness of the buffer layer as the thickness of the buffer layer increases.

12. The light-absorbing layer is a near-infrared absorbing substance having absorption characteristics of the first absorption spectrum and the second absorption spectrum; a counter material that forms a pn junction with the near-infrared absorbing material, 2. The sensor according to claim 1, wherein a peak wavelength of an external quantum efficiency (EQE) spectrum in the second infrared wavelength region is controlled by a composition ratio of the near-infrared absorbing material and the counter material in the light absorption layer.

13. a peak wavelength of an external quantum efficiency (EQE) spectrum in the second infrared wavelength region shifts to a longer wavelength region as the composition ratio of the near infrared absorbing material to the counter material increases; 13. The sensor of claim 12, wherein the magnitude of a peak wavelength of an external quantum efficiency (EQE) spectrum in the second infrared wavelength region is proportional to a composition ratio of the near-infrared absorbing material to the counter material.

14. 10. The sensor of claim 1, wherein the reflective layer comprises Ag, Cu, Al, Au, Ti, Cr, Ni, alloys thereof, nitrides thereof, or combinations thereof.

15. The sensor described in claim 1, characterized in that the peak wavelength of the external quantum efficiency (EQE) spectrum in the second infrared wavelength region corresponds to the resonant wavelength of the microcavity.

16. the second electrode includes an inorganic nanolayer facing the light-absorbing layer; 10. The sensor of claim 1, wherein the inorganic nanolayer comprises ytterbium (Yb), calcium (Ca), potassium (K), barium (Ba), magnesium (Mg), lithium fluoride (LiF), or an alloy thereof.

17. The sensor of claim 1 , further comprising a semiconductor substrate located below the first electrode.

18. 18. An electronic device comprising a sensor according to any one of claims 1 to 17.

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