Multi-zone electrostatic chuck

Abstract

An exemplary semiconductor processing chamber may include a pedestal including a platen configured to support a semiconductor substrate across a surface of the platen. The chamber may include a first conductive mesh integrated into the platen and configured to act as a first chucking mesh. The first conductive mesh may extend radially across the platen. The chamber may include a second conductive mesh integrated into the platen and configured to act as a second chucking mesh. The second conductive mesh may be characterized by an annular shape. The second conductive mesh may be disposed between the first conductive mesh and the surface of the platen.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of priority to U.S. patent application Ser. No. 16 / 717,245, filed Dec. 17, 2019, which is incorporated by reference herein in its entirety for all purposes.

[0002] Technical Field

[0002] The present technology relates to semiconductor processing and chamber components. More particularly, the present technology relates to chamber components and processing methods. [Background technology]

[0003] background

[0003] Integrated circuits are made possible by processes that produce intricately patterned layers of material on substrate surfaces. Fabricating patterned materials on substrates requires controlled methods for the formation and removal of exposed material. As device sizes continue to shrink, deposited materials can impart stress to the substrate, resulting in substrate bowing. During subsequent deposition operations, wafer bow can affect contact across the substrate support, which can affect heating. Non-uniform heating profiles across the substrate can affect subsequent deposition operations, causing non-uniform deposition across the surface of the substrate.

[0004]

[0004] Therefore, there is a need for improved systems and methods that can be used to manufacture high quality devices and structures. These and other needs are addressed by the present technology. Summary of the Invention

[0005] An exemplary semiconductor processing chamber may include a pedestal including a platen configured to support a semiconductor substrate over a surface of the platen. The chamber may include a first conductive mesh incorporated within the platen and configured to act as a first chucking mesh. The first conductive mesh may extend radially across the platen. The chamber may include a second conductive mesh incorporated within the platen and configured to act as a second chucking mesh. The second conductive mesh may be characterized by an annular shape. The second conductive mesh may be disposed between the first conductive mesh and the surface of the platen.

[0006] In some embodiments, the chamber may include a third conductive mesh integrated into the platen and configured to act as a third chucking mesh. The third conductive mesh may be included within an inner annular radius of the second conductive mesh. The third conductive mesh may be disposed between the first conductive mesh and the surface of the platen. The second and third conductive meshes may be coplanar within the platen. The second and third conductive meshes may be separated by an annular gap. The chamber may include a first thermocouple associated with the second conductive mesh and a second thermocouple associated with the third conductive mesh. The first and second conductive meshes may be operable independently from a power source. The chamber may include a mica sheet disposed between the first and second conductive meshes. The mica sheet may extend into apertures formed in the first conductive mesh, and an electrode connector may extend through the apertures and the mica sheet to electrically couple to the second conductive mesh. The chamber can include at least two additional conductive meshes axially aligned with the first and second conductive meshes.

[0007] Some embodiments of the present technology may include a substrate support pedestal. The pedestal may include a platen configured to support a semiconductor substrate across a surface of the platen. The pedestal may include a first conductive mesh incorporated within the platen and configured to operate as a first chucking mesh. The first conductive mesh may extend radially across the platen. The pedestal may include a second conductive mesh incorporated within the platen and configured to operate as a second chucking mesh. The second conductive mesh may be characterized by an annular shape, and the second conductive mesh may be disposed between the first conductive mesh and the surface of the platen. The chamber may include a third conductive mesh incorporated within the platen and configured to operate as a third chucking mesh. The third conductive mesh may be contained within an inner annular radius of the second conductive mesh. The third conductive mesh may be disposed between the first conductive mesh and the surface of the platen.

[0008] In some embodiments, the pedestal may include a first thermocouple associated with the second conductive mesh and a second thermocouple associated with the third conductive mesh. The second conductive mesh and the third conductive mesh may be coplanar within the platen. The second conductive mesh and the third conductive mesh may be separated by an annular gap. The first conductive mesh and the second conductive mesh may be independently operable from a power source within the substrate support. The pedestal may include a mica sheet disposed between the first conductive mesh and the second conductive mesh. The mica sheet may extend to apertures formed in the first conductive mesh. An electrode connector may extend through the apertures and the mica sheet to electrically couple to the second conductive mesh. The pedestal may include at least two additional conductive meshes coaxially aligned with the first conductive mesh and the second conductive mesh.

[0009] Some embodiments of the present technique may include a semiconductor processing method. The method may include clamping a substrate on a substrate support by engaging a first conductive mesh of the substrate support. The first conductive mesh may extend across the substrate support. The method may include engaging a second conductive mesh of the substrate support. The second conductive mesh may include an annular mesh overlying the first conductive mesh. The first conductive mesh may be engaged with the substrate at a first clamping voltage. The second conductive mesh may be engaged with the substrate at a second clamping voltage higher than the first clamping voltage. The method may include performing a semiconductor processing operation on the substrate. In some embodiments, the second conductive mesh may be characterized by an annular shape. The substrate support may include a third conductive mesh, and the second conductive mesh and the third conductive mesh may be coplanar.

[0010] Such techniques may offer many advantages over conventional systems and techniques. For example, the system may improve deposition profiles to improve uniformity across the substrate. Additionally, the techniques may enable in situ adjustment of chucking voltages, which may allow adjustments that affect deposition during processing, as well as other semiconductor processes. These and other embodiments, along with many of their advantages and features, are described in more detail in conjunction with the following description and accompanying figures.

[0011] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and drawings. [Brief explanation of the drawings]

[0012] [Figure 1] 1 shows a schematic cross-sectional view of an exemplary processing chamber in accordance with some embodiments of the present technique. [Figure 2]

[0013] 1 shows a schematic cross-sectional view of an exemplary substrate support, in accordance with some embodiments of the present technique; [Figure 3]

[0014] 1 shows a schematic plan view of an exemplary substrate support, in accordance with some embodiments of the present technique; [Figure 4]

[0015] 1 illustrates exemplary operations in a method of semiconductor processing according to some embodiments of the present technique. DETAILED DESCRIPTION OF THE INVENTION

[0013]

[0016] Some of the figures are included as schematic diagrams. It is understood that the drawings are for illustrative purposes and should not be considered to be to scale unless specifically stated to be so. Furthermore, as schematic diagrams, the figures are provided to aid in understanding and may not include all aspects or information compared to realistic representations and may include exaggerated material for illustrative purposes.

[0014]

[0017] In the accompanying figures, similar components and / or functions may have the same reference label. Furthermore, various components of the same type may be distinguished by tracing the reference numbers with a letter that distinguishes between the similar components. When only a first reference number is used herein, the description is applicable to any one of the similar components having the same first reference number, regardless of the letter.

[0015]

[0018] Many material deposition processes can be temperature sensitive. In various processing systems, the substrate support can act as a heat source for the substrate during deposition. As manufacturing processes are performed, several layers of material can form on the substrate, which can impose a lot of stress on the substrate. Often, these stresses can cause a certain amount of substrate deflection. Electrostatic chucking can counteract the effects of much of the deflection to maintain a flatter substrate, which can maintain more uniform contact across the substrate support, which in turn can maintain more uniform heating across the substrate.

[0016]

[0019] Because increased stress can result in more pronounced wafer bow, many conventional techniques may attempt to counteract wafer bow by increasing the chucking voltage or otherwise modifying chamber components or processes to overcome the higher stress. Increasing the chucking voltage may provide limited benefit as stress increases, and simply increasing the chucking voltage may have undesirable effects. For example, many monopole-type chucks receive a uniform voltage bias across the entire electrode. Because electric flux may be less lost at the center of the substrate, electric field lines tend to concentrate at the center of the substrate. While this opposing force may overcome wafer bow caused by some film stresses, as the voltage increases, the force may eventually pull the radial edge of the substrate away from the substrate support. As a result, uniform temperature delivery may occur near the center of the substrate, where contact with the heated substrate support can be maintained, but at the peripheral edge, the gap between the substrate and the support may reduce heat transfer, and temperature gradients may appear across the substrate.

[0017]

[0020] Temperature gradients across a substrate can have several effects. For example, some deposition operations may increase deposition at higher temperatures, while other deposition operations may decrease deposition at higher temperatures. In the first case, where edge bowing may occur on the substrate, a center-peak deposition process may occur. In the latter scenario, an edge-peak deposition process may occur. Prior art techniques may attempt to overcome these effects by adjusting alternative aspects of the process. For example, some substrate supports may attempt to compensate for heat loss with multi-zone heaters that can deliver more heat to the edge region. However, not only does this waste energy, but gaps can make it more difficult to create uniform heat transfer. Furthermore, modifying process conditions or flow through the chamber to compensate for non-uniform deposition may require greater customization of parts to counteract the characteristics of each unique chamber. As a result, many prior art techniques continue to result in greater temperature and deposition non-uniformity.

[0018]

[0021] The present technology overcomes these problems by incorporating a multi-zone electrostatic chuck. By providing a pedestal system that can adjust the chucking force at multiple locations across the substrate support, temperature discontinuities can be overcome by providing more uniform contact across the substrate surface. This allows for a more uniform temperature distribution across the substrate, potentially improving deposition thickness across the substrate for temperature-sensitive depositions.

[0019] While the remainder of the disclosure routinely identifies a particular deposition process utilizing the disclosed technology, it will be readily understood that the systems and methods are equally applicable to other deposition and etch chambers and processes that may occur in the described chambers. Thus, the present technology should not be considered limited for use with only these particular deposition processes or chambers. This disclosure discusses one possible system and chamber that may include components according to embodiments of the present technology, before describing additional modifications and adaptations to this system according to embodiments of the present technology.

[0020]

[0023] FIG. 1 illustrates a cross-sectional view of an exemplary processing chamber 100 in accordance with some embodiments of the present technique. The diagram may provide an overview of a system incorporating one or more aspects of the present technique and / or a system capable of performing one or more operations in accordance with embodiments of the present technique. Additional details of the chamber 100 or the method implemented therein may be further described below. While the chamber 100 may be utilized to form a film layer in accordance with some embodiments of the present technique, it should be understood that the method may similarly be performed in any chamber in which film formation may occur. The processing chamber 100 may include a chamber body 102, a substrate support 104 disposed within the chamber body 102, and a lid assembly 106 coupled to the chamber body 102 and enclosing the substrate support 104 within a processing region 120. A substrate 103 may be provided in the processing region 120 through an opening 126, which may be sealed in a conventional manner for processing using a slit valve or door. The substrate 103 may be seated on a surface 105 of the substrate support during processing. The substrate support 104 may be rotatable along an axis 147 about which the shaft 144 of the substrate support 104 may be disposed, as indicated by arrow 145. Alternatively, the substrate support 104 may be raised and rotated as needed during the deposition process.

[0021]

[0024] The plasma profile modulator 111 may be disposed within the processing chamber 100 to control plasma distribution across a substrate 103 disposed on a substrate support 104. The plasma profile modulator 111 may include a first electrode 108, which may be disposed adjacent to the chamber body 102 and may separate the chamber body 102 from other components of the lid assembly 106. The first electrode 108 may be part of the lid assembly 106 or may be a separate sidewall electrode. The first electrode 108 may be an annular or ring-shaped member, such as a ring electrode. The first electrode 108 may be a continuous loop around the circumference of the processing chamber 100 surrounding the processing region 120, or may be discontinuous at selected locations as needed. The first electrode 108 may also be a perforated electrode, such as a perforated ring or mesh electrode, or may be a plate electrode, such as a secondary gas distributor.

[0022]

[0025] One or more isolators 110 a, 110 b, which may be a dielectric material such as a ceramic or a metal oxide, e.g., aluminum oxide and / or aluminum nitride, may contact the first electrode 108 and electrically and thermally isolate the first electrode 108 from the gas distributor 112 and the chamber body 102. The gas distributor 112 may define an aperture 118 for distributing process precursors into the processing region 120. The gas distributor 112 may be coupled to a first power source 142, such as an RF generator, an RF power source, a DC power source, a pulsed DC power source, a pulsed RF power source, or any other power source capable of being coupled to a processing chamber. In some embodiments, the first power source 142 may be an RF power source.

[0023]

[0026] The gas distributor 112 can be a conductive gas distributor or a non-conductive gas distributor. The gas distributor 112 can also be formed from conductive and non-conductive components. For example, the body of the gas distributor 112 can be conductive, while the faceplate of the gas distributor 112 can be non-conductive. The gas distributor 112 can be powered by, for example, a first power source 142 as shown in FIG. 1, or the gas distributor 112 can be coupled to ground in some embodiments.

[0024]

[0027] The first electrode 108 can be coupled to a first conditioning circuit 128 that can control the ground path of the processing chamber 100. The first conditioning circuit 128 can include a first electronic sensor 130 and a first electronic controller 134. The first electronic controller 134 can be or include a variable capacitor or other circuit element. The first conditioning circuit 128 can be or include one or more inductors 132. The first conditioning circuit 128 can be any circuit that allows for a variable or controllable impedance under plasma conditions present in the processing region 120 during processing. In some embodiments, as shown, the first conditioning circuit 128 can include a first circuit leg and a second circuit leg coupled in parallel between ground and the first electronic sensor 130. The first circuit leg can include a first inductor 132A. The second circuit leg can include a second inductor 132B coupled in series with the first electronic controller 134. A second inductor 132B can be disposed between the first electronic controller 134 and a node connecting both the first and second circuit legs to the first electronic sensor 130. The first electronic sensor 130 can be a voltage or current sensor and can be coupled to the first electronic controller 134, which can allow for some degree of closed-loop control of the plasma conditions in the processing region 120.

[0025]

[0028] The second electrode 122 can be coupled to the substrate support 104. The second electrode 122 can be embedded within the substrate support 104 or coupled to a surface of the substrate support 104. The second electrode 122 can be a plate, a perforated plate, a mesh, a wire screen, or any other distributed arrangement of conductive elements. The second electrode 122 can be a conditioning electrode and can be coupled to a second conditioning circuit 136 by a conduit 146, such as a cable having a selected resistance, e.g., 50 ohms, disposed on a shaft 144 of the substrate support 104. The second conditioning circuit 136 can include a second electronic sensor 138 and a second electronic controller 140, which can be a second variable capacitor. The second electronic sensor 138 can be a voltage or current sensor and can be coupled to the second electronic controller 140 to further control the plasma conditions in the processing region 120.

[0026]

[0029] A third electrode 124, which may be a bias electrode and / or an electrostatic chucking electrode, may be coupled to the substrate support 104. The third electrode may be coupled to a second power source 150 through a filter 148, which may be an impedance matching circuit. The second power source 150 may be DC power, pulsed DC power, RF bias power, a pulsed RF source or bias power, or in some embodiments, the second power source 150 may be RF bias power.

[0027]

[0030] The lid assembly 106 and substrate support 104 of FIG. 1 can be used in any processing chamber for plasma or thermal processing. During operation, the processing chamber 100 can provide real-time control of plasma conditions within the processing region 120. A substrate 103 can be placed on the substrate support 104, and process gases can flow through the lid assembly 106 using the inlet 114 according to any desired flow plan. The gases can exit the processing chamber 100 through the outlet 152. Power can be coupled with the gas distributor 112 to establish a plasma within the processing region 120. In some embodiments, the substrate can be subjected to an electrical bias using a third electrode 124.

[0028]

[0031] Upon energizing the plasma in the processing region 120, a potential difference may be established between the plasma and the first electrode 108. A potential difference may also be established between the plasma and the second electrode 122. Electronic controllers 134, 140 may then be used to adjust the flow characteristics of the ground paths represented by the two adjustment circuits 128 and 136. Set points may be provided to the first adjustment circuit 128 and the second adjustment circuit 136 to provide independent control of the deposition rate and center-to-edge plasma density uniformity. In embodiments in which both electronic controllers may be variable capacitors, electronic sensors may adjust the variable capacitors to independently maximize the deposition rate and minimize thickness non-uniformity.

[0029]

[0032] Each of the conditioning circuits 128, 136 can have a variable impedance that can be adjusted using the respective electronic controllers 134, 140. If the electronic controllers 134, 140 are variable capacitors, the capacitance range of each variable capacitor and the inductance of the first inductor 132A and the second inductor 132B can be selected to provide a range of impedances. This range can depend on the frequency and voltage characteristics of the plasma, and the capacitance range of each variable capacitor can be minimized. Therefore, when the capacitance of the first electronic controller 134 is minimum or maximum, the impedance of the first conditioning circuit 128 can be high, resulting in a plasma shape with minimal aerial or lateral coverage on the substrate support. When the capacitance of the first electronic controller 134 approaches a value that minimizes the impedance of the first conditioning circuit 128, the aerial coverage of the plasma is maximized, effectively covering the entire working area of ​​the substrate support 104. As the capacitance of the first electronic controller 134 deviates from the minimum impedance setting, the plasma shape may contract from the chamber walls and the air coverage of the substrate support may decrease. The second electronic controller 140 may have a similar effect; as the capacitance of the second electronic controller 140 can be changed, the air coverage of the plasma above the substrate support may increase and decrease.

[0030]

[0033] Electronic sensors 130, 138 can be used to regulate the respective circuits 128, 136 in a closed loop. Depending on the sensor type used, a current or voltage setpoint can be attached to each sensor, and the sensors can be provided with control software that determines adjustments to the respective electronic controllers 134, 140 to minimize deviations from the setpoint. As a result, the plasma shape can be selected and dynamically controlled during processing. While the above discussion is based on the electronic controllers 134, 140 being variable capacitors, it should be understood that any electronic component with adjustable characteristics can be used to provide adjustable impedance to the regulation circuits 128 and 136.

[0031]

[0034] 2 shows a schematic cross-sectional view of an exemplary substrate support 200 in accordance with some embodiments of the present technique. The substrate support 200 may be included in the chamber 100 described above, or any other processing chamber in which electrostatic chucking may be used. The substrate support 200 may include additional details of the substrate support 104 described above, and may include any of the materials, components, or properties described above.

[0032]

[0035] The substrate support 200 may be a pedestal as shown, including a platen 205 and a stem 210 that may be coupled to the platen. The platen, in some embodiments, may be or include a ceramic material or any other dielectric material and may be configured to support a semiconductor substrate across its surface. As previously mentioned, the substrate support 200 may include any of the components previously described, including heating elements or other components, and the substrate support 200 may include one or more conductive meshes that may function as a regulated chucking mechanism and provide individually controlled chucking regions across the substrate support.

[0033]

[0036] As shown, the substrate support 200 may include a first conductive mesh 215 integrated into the platen 205. The first conductive mesh 215 may be configured to operate as a first electrostatic chucking mesh for clamping a substrate to the substrate support. The first conductive mesh may extend radially or laterally across the platen and may substantially or completely cover an area across the substrate support, which may provide a clamping or electrostatic force across the substrate when a voltage is applied to the first conductive mesh 215. The first conductive mesh 215 may include apertures or gaps, as shown, which may facilitate the passage of one or more components through the first conductive mesh, as described further below.

[0034] The substrate support 200 may also, in some embodiments of the present technology, include one or more additional conductive meshes that may operate in concert with the first conductive mesh 215 to provide adjustable chucking control along one or more regions of the substrate support. For example, a second conductive mesh 220 may be incorporated within the platen 205 and configured to operate as a second chucking mesh. As further illustrated and shown below, the second conductive mesh 220 may be characterized by an annular shape and may be positioned within the substrate support 200 between the first conductive mesh 215 and the surface of the platen on which a substrate may be seated. In other embodiments, the second conductive mesh 220 may be a circular mesh characterized by a diameter smaller than that of the first conductive mesh 215.

[0035]

[0038] The second conductive mesh 220, in some embodiments, can be characterized by an outer annular radius that is equal to or similar to the outer diameter of the first conductive mesh 215. The second conductive mesh 220 can be characterized by an inner annular radius that can be any distance toward the central axis through the pedestal, and several additional chucking meshes incorporated into the pedestal support can be considered. For example, as shown, the substrate support 200 can include several additional chucking meshes to provide additional control areas for electrostatic chucking. As previously explained, because substrate deflection can be either tensile or compressive, enhanced chucking in different regions of the substrate can provide benefits applicable during almost any process to accommodate the substrate being processed. Thus, in some embodiments of the present technology, the substrate support can include one or more, two or more, three or more, four or more, five or more, six or more, or more additional chucking meshes in addition to the base chucking mesh.

[0036]

[0039] As shown, the substrate support 200 may include four additional chucking meshes distributed within distinct zones of the substrate support and covering the base chucking mesh. For example, in addition to the second conductive mesh 220, a third conductive mesh 225 may be incorporated within the platen 205 and configured to operate as the third chucking mesh. The third conductive mesh 225 may be contained within the inner annular radius of the second conductive mesh 220, as shown. The third conductive mesh 225 may also be characterized by an annular shape; however, in some embodiments, the mesh may be characterized by a diameter smaller than that of the first conductive mesh 215, but may be circular or similar in shape to the first conductive mesh 215. A fourth conductive mesh 230 may be incorporated within the platen 205 and configured to operate as the fourth chucking mesh. The fourth conductive mesh 230 may be contained within the inner annular radius of the third conductive mesh and may be annular or circular, as described above, depending on any additional meshes. A fifth conductive mesh 235 may be incorporated into the platen and contained within the inner annular radius of the fourth conductive mesh 230. The mesh may also be annular or circular as shown, and when included as the innermost mesh, may extend coaxially along a central axis through the substrate support. It should be understood that any number or size of meshes shown may be included within the substrate support according to embodiments of the present technology, and the substrate support may or may not include any of the additional meshes shown.

[0037]

[0040] As shown, in some embodiments, each of the additional chucking meshes can be coplanar within the substrate support and concentric about a central axis through the substrate support. The additional chucking meshes can also be coaxial with the first conductive mesh 215. As shown, a gap, such as an annular gap, can be maintained between each additional mesh to allow for individual manipulation. In some embodiments, the substrate support can be a dielectric or ceramic material that can maintain electrical isolation of the individual meshes for manipulation.

[0038]

[0041] Each conductive mesh incorporated within the pedestal can be coupled to a power supply 240. In some embodiments, each conductive mesh can be independently operable from a single power supply, while in other embodiments, each conductive mesh can be coupled to a separate power supply. Each power supply can be configured to provide a voltage to the conductive mesh for electrostatic chucking. Electrostatic chucking may apply a voltage of nominally about 200 V or less to maintain a substrate during semiconductor processing. According to embodiments of the present technology, when multiple meshes are incorporated within the substrate support, a smaller voltage can be utilized to maintain the clamping effect of the first conductive mesh 215, while additional power can be applied to each of the other conductive meshes to provide adjustable clamping at several locations across the substrate. Because additional chucking meshes can be used to provide specific chucking voltages for individual regions, the voltage applied to the main or base chucking mesh, such as the first conductive mesh 215, can be reduced to provide minimal chucking to maintain the substrate position for processing. Thus, in some embodiments, depending on the configuration of the conductive mesh, the voltage applied to the first conductive mesh can be about 400 V or less, and may be about 350 V or less, about 300 V or less, about 250 V or less, about 200 V or less, about 150 V or less, about 100 V or less, about 80 V or less, about 60 V or less, about 50 V or less, or less. It should be understood that any voltage discussed throughout this disclosure can be of any polarity, and any mesh discussed can be operated with either polarity in embodiments of the present technology. For example, in embodiments of the present technology, any of the meshes can be operated with the same polarity or with different polarities.

[0039]

[0042] When a voltage is applied to any of the additional conductive meshes, the voltage can operate cumulatively with the voltage applied by the first conductive mesh, which can provide additional chucking to the substrate in the area associated with the additional conductive mesh. Each of the additional meshes can be operated at any voltage of about 50 V or greater, and can be operated at a voltage of about 100 V or greater, about 150 V or greater, about 200 V or greater, about 250 V or greater, about 300 V or greater, about 350 V or greater, about 400 V or greater, about 450 V or greater, about 500 V or greater, or greater.

[0040]

[0043] As a result, when the cumulative effect of each mesh is applied, depending on the voltage applied to the first conductive mesh, the voltage may range from about 50 V or less to a combined voltage in any particular region, which may be about 50 V or more, or may be increased to any combination of voltages listed, or any voltage or voltage range encompassed within the listed ranges. While there may be a correlation between increasing the applied voltage and the ability to increase contact in regions of the substrate, as noted above, increasing the voltage beyond a certain threshold may cause the applied clamping force to deflect, deform, or break the substrate, depending on the substrate's properties. Thus, in some embodiments, the second voltage may be maintained at about 1,100 V or less, about 1,000 V or less, about 900 V or less, about 800 V or less, or even less.

[0041]

[0044] In some embodiments, one or more thermocouples can be incorporated into the system to determine or estimate the temperature profile within a region along the substrate or substrate support. Based on temperature discrepancies within the substrate support, such as higher or lower temperatures, an estimate can be made to determine contact issues with the substrate. Thus, temperature measurements can be used to determine whether to increase or decrease chucking in a particular region to compensate for temperature effects that may result in uneven deposition. For example, thermocouple leads can extend through the substrate support stem 210, and thermocouples 250 can be positioned or associated within each region of the substrate support for temperature measurements. As shown, if four additional chucking meshes are included, four thermocouples can be included, with individual thermocouples associated with each associated chucking mesh. In embodiments, any number of additional chucking meshes and / or thermocouples can be incorporated into the substrate support to provide increased chucking or measurement in any number of regions.

[0042]

[0045] Because the first conductive mesh can be constantly manipulated and additional conductive meshes can be manipulated based on process needs, in some embodiments, losses or leaks between components can occur. Therefore, in some embodiments, material 245 can be disposed between the first chucking mesh and the other chucking meshes above it. The material can be any electrically insulating material, and in some embodiments, the material can also be thermally conductive to maintain sufficient heat transfer from the heater element or elements below to the substrate. For example, a mica sheet or other electrically and / or thermally conductive material can be disposed between the first conductive mesh and the other conductive meshes included between the first conductive mesh and the surface of the substrate support. Furthermore, the mica sheet can also extend vertically through gaps or openings formed in the first conductive mesh, which can extend to allow electrode connectors or couplings and / or thermocouples to connect with the overlying electrodes or to be positioned within the substrate support. This can further provide insulation between the components in some embodiments.

[0043]

[0046] In operation, voltage can be applied in multiple ways. For example, a base voltage for capacitive coupling can be applied to the first conductive mesh 215, which in some embodiments may be the minimum voltage. Depending on the wafer deflection or profile, additional conductive meshes can be engaged to increase positional chucking of the substrate. For example, in some embodiments where the radial edge of the substrate may be deflecting away from the substrate support, the second conductive mesh 220 can be engaged to increase the voltage applied to this region. Similarly, depending on the deposition profile, chucking can be increased or decreased in specific regions by adjusting chucking on any of the conductive meshes. For example, in addition to increasing positional clamping by engaging a specific conductive mesh, in some embodiments, chucking can be increased in all other regions except for the specific region, effectively decreasing chucking in the specific region. It should be understood that any number of other adjustments are similarly encompassed by the present technology, and the examples discussed are not intended to limit the present technology.

[0044]

[0047] FIG. 3 shows a schematic plan view of an exemplary substrate support 200 in accordance with some embodiments of the present technique, and may show a top view of the substrate support 200 described above. It should be understood that the substrate support may include any of the features, components, or characteristics of any other substrate support discussed elsewhere. As shown, the annular nature of some of the additional chucking meshes can be seen in this view. For example, each of the second conductive mesh 220, the third conductive mesh 225, the fourth conductive mesh 230, and the fifth conductive mesh 235 can be seen to illustrate a corresponding coverage area. Additionally, gaps are shown between each individual chucking mesh to limit interaction between the conductive meshes. Within each gap, a first conductive mesh 215 can be seen, which, as previously described, can extend across the substrate support to clamp across the substrate.

[0045]

[0048] FIG. 4 illustrates exemplary operations in a method 400 of semiconductor processing in accordance with some embodiments of the present technique. The method can be performed in one or more chambers, including any of the chambers described above, and can include any of the substrate supports described above, along with any other aspects of the systems or chambers described above. Method 400 can include several optional operations that may or may not be specifically associated with some embodiments of methods in accordance with the present technique. For example, many of the operations are described to provide a broader range of structure formation, but are not critical to the technique or can be performed by alternative methodologies, as will be readily understood. For example, and as mentioned above, operations can be performed before delivering a substrate to a processing chamber, such as processing chamber 100 described above, and method 400 can be performed with or without some or all aspects of substrate support 200 described above.

[0046]

[0049] In operation 405, the method 400 may include clamping a semiconductor substrate on a substrate support within a processing region of the semiconductor processing chamber. The substrate may be clamped by engaging a first conductive mesh of the substrate support, such as the first conductive mesh 215 described above, which may extend across the substrate support. In operation 410, one or more additional conductive meshes may be engaged within the substrate support. The one or more additional conductive meshes may include at least one annular or circular mesh, or any other shaped mesh that overlies the first conductive mesh. The first conductive mesh may engage the substrate at a first clamping voltage, such as any of the voltages described above. Then, the one or more additional conductive meshes may engage regions of the substrate at a second clamping voltage that is higher than the first clamping voltage. In some embodiments, due to the cumulative effect of operating the secondary conductive meshes, the one or more additional conductive meshes may further clamp the substrate while operating at a lower voltage than the first conductive mesh. For example, if a first conductive mesh is operated at 100 V, a second conductive mesh may be operated at 50 V in a particular region of the substrate support. Thus, other regions of the substrate may be engaged at 100 V, while the region corresponding to the second conductive mesh may be engaged at, for example, 150 V. Any other combinations or chucking scenarios are similarly encompassed as described above and will be understood to be similarly encompassed by the present technology.

[0047]

[0050] A semiconductor processing operation can then be performed in operation 415, which may include deposition, etching, or any other process that can benefit from electrostatic chucking as described. In some embodiments, one or more temperatures can be monitored across the substrate or substrate support in optional operation 420. The temperatures can be used to determine whether a uniform process can be performed or whether temperature effects may be occurring. In some embodiments, these readings or measurements can be used to adjust the chucking voltage of one or more regions of the substrate support. For example, in one non-limiting embodiment, the substrate temperature may be lower, which may be caused by a lack of complete contact. This may be registered as a reduced temperature at the substrate or substrate support, or the temperature of the substrate support may be higher, for example, due to reduced heat transfer. In response, the chucking voltage of the associated chucking mesh can be increased or otherwise adjusted in that region in optional operation 425, which may provide more uniform heat transfer to the region of the substrate. Furthermore, in subsequent processes, such as deposition processes, thickness measurements across the substrate may be correlated to reduced contact in a region of the substrate. Subsequent processing can then increase or decrease chucking in one or more relevant regions to accommodate thickness variations and improve uniformity across the substrate.

[0048]

[0051] Utilizing methods and components according to embodiments of the present technique can improve the deposition or formation of materials, and by providing increased control of chucking across the substrate support, can improve the uniformity of temperature distribution, which can improve the processing performed.

[0049]

[0052] In the foregoing description, for purposes of explanation, numerous details are set forth in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that particular embodiments may be practiced without some of these details, or with additional details.

[0050]

[0053] Although several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative structures, and equivalents can be used without departing from the spirit of the embodiments. Moreover, some well-known processes and elements have not been described to avoid unnecessarily obscuring the present technology. Therefore, the above description should not be construed as limiting the scope of the present technology. Furthermore, while a method or process may be described sequentially or stepwise, it should be understood that operations may be performed simultaneously or in an order different from that described.

[0051]

[0054] Where a range of values ​​is presented, unless the context clearly dictates otherwise, it is understood that each intervening value between the upper and lower limits of that range is also specifically disclosed, to the smallest unit of the unit of the lower limit. Any narrower range between any stated or unstated intervening value in a stated range, and any other stated or intervening value in that stated range, is also encompassed. The upper and lower limits of these smaller ranges may be individually included or excluded, and each range in which either, neither, or both limits are included in the narrower range is also encompassed within the technology, subject to the specifically excluded limits in the stated range. When a stated range includes one or both of the limits, ranges excluding either or both of the included limits are also included.

[0052]

[0055] As used in this specification and the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to "a precursor" includes a reference to a plurality of such precursors, reference to "a layer" includes a reference to one or more layers and equivalents thereof known to those skilled in the art, and so forth.

[0053]

[0056] Additionally, the terms "comprise(s)", "comprising", "contain(s)", "containing", "include(s)", and "including", when used in this specification and claims, are intended to specify the presence of stated features, integers, components, or steps, but do not exclude the presence or addition of one or more other features, integers, components, steps, operations, or groups.

Claims

1. a pedestal including a platen configured to support a semiconductor substrate over a surface of the platen; a first conductive mesh embedded within the platen and configured to operate as a first chucking mesh, the first conductive mesh extending radially across the platen; a second conductive mesh incorporated within the platen and configured to act as a second chucking mesh, characterized by an annular shape and disposed between the first conductive mesh and the surface of the platen; and a sheet of mica disposed between the first conductive mesh and the second conductive mesh; 1. A semiconductor processing chamber comprising:

2. 10. The semiconductor processing chamber of claim 1, further comprising a third conductive mesh incorporated within the platen and configured to act as a third chucking mesh, the third conductive mesh being contained within an inner annular radius of the second conductive mesh and positioned between the first conductive mesh and the surface of the platen.

3. 3. The semiconductor processing chamber of claim 2, wherein the second conductive mesh and the third conductive mesh are coplanar within the platen.

4. 4. The semiconductor processing chamber of claim 3, wherein the second conductive mesh and the third conductive mesh are separated by an annular gap.

5. a first thermocouple associated with the second conductive mesh; and a second thermocouple associated with the third conductive mesh; 5. The semiconductor processing chamber of claim 4, further comprising:

6. 10. The semiconductor processing chamber of claim 1, wherein the first conductive mesh and the second conductive mesh are each independently controllable by a power source.

7. 2. The semiconductor processing chamber of claim 1, wherein the mica sheet extends into apertures formed in the first conductive mesh, and an electrode connector extends through the apertures and the mica sheet to electrically couple with the second conductive mesh.

8. 10. The semiconductor processing chamber of claim 1, further comprising at least two additional conductive meshes axially aligned with the first conductive mesh and the second conductive mesh.

9. a platen configured to support a semiconductor substrate across a surface of the platen; a first conductive mesh embedded within the platen and configured to operate as a first chucking mesh, the first conductive mesh extending radially across the platen; a second conductive mesh incorporated within the platen and configured to act as a second chucking mesh, characterized by an annular shape and disposed between the first conductive mesh and the surface of the platen; a third conductive mesh incorporated within the platen and configured to operate as a third chucking mesh, the third conductive mesh being contained within an inner annular radius of the second conductive mesh and disposed between the first conductive mesh and the surface of the platen; a first thermocouple associated with the second conductive mesh; and a second thermocouple associated with the third conductive mesh; Including, Substrate support pedestal.

10. 10. The substrate support pedestal of claim 9, wherein the second conductive mesh and the third conductive mesh are coplanar within the platen.

11. 11. The substrate support pedestal of claim 10, wherein the second conductive mesh and the third conductive mesh are separated by an annular gap.

12. 10. The substrate support pedestal of claim 9, wherein the first conductive mesh and the second conductive mesh are each independently controllable by a power source within the platen.

13. 10. The substrate support pedestal of claim 9, further comprising a sheet of mica disposed between the first conductive mesh and the second conductive mesh.

14. 14. The substrate support pedestal of claim 13, wherein the mica sheet extends into openings formed in the first conductive mesh, and an electrode connector extends through the openings and the mica sheet to electrically couple to the second conductive mesh.

15. 10. The substrate support pedestal of claim 9, further comprising at least two additional conductive meshes axially aligned with the first conductive mesh and the second conductive mesh.

16. clamping the substrate on the substrate support by engaging a first conductive mesh of the substrate support, the first conductive mesh extending across the substrate support and a sheet of mica disposed on the first conductive mesh; engaging a second conductive mesh of the substrate support, the second conductive mesh including an annular mesh overlying the first conductive mesh and the sheet of mica, the first conductive mesh engaging the substrate at a first clamping voltage and the second conductive mesh engaging the substrate at a second clamping voltage higher than the first clamping voltage; Measuring temperatures by monitoring one or more temperatures across the substrate or the substrate support, the temperature measurements being used to adjust clamping voltages; and performing semiconductor processing operations on said substrate; A semiconductor processing method comprising:

17. 17. The semiconductor processing method of claim 16, wherein the second conductive mesh is characterized by an annular shape, the substrate support further comprises a third conductive mesh, and the second conductive mesh and the third conductive mesh are coplanar.

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