Cleaning of SIN by CCP plasma or RPS cleaning

Abstract

A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate at a top portion of the processing chamber, a substrate support at a bottom portion of the processing chamber, a deposition ring disposed around the outer periphery of the substrate support, and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a processing cavity. The shield forms an outer boundary of the processing cavity. A method of cleaning the chamber is also described. In one embodiment, the method includes closing a bottom gas passage of the processing chamber into the processing cavity, flowing an inert gas from the bottom gas passage, flowing a reactant into the processing cavity through an opening in the shield, and venting the reactant gas from the processing cavity.

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE Embodiments of the present disclosure relate to the field of electronic device manufacturing, and in particular to integrated circuit (IC) manufacturing. In particular, embodiments of the present disclosure relate to physical vapor deposition apparatus and in-chamber cleaning methods for physical vapor deposition apparatus. [Background technology]

[0002] During physical vapor deposition (PVD), materials containing particulates and contaminants accumulate on the process kit (e.g., shield, edge ring). The materials formed on the process kit can contaminate subsequently processed wafers, necessitating the removal and / or replacement of process kit parts. As a result, depositing thick hard mask films by PVD is challenging due to frequent preventative maintenance (PM), which impacts wafer throughput and costs. Furthermore, meeting low specifications for particulate contamination using existing hardware is extremely difficult.

[0003] Every time a PVD chamber is opened, it creates an opportunity for contamination and throughput issues. The PVD chamber is opened when the target wears out and needs to be replaced. During its target lifecycle, the PVD chamber is often opened multiple times to replace process kit parts.

[0004] Other approaches to extending the time between preventive maintenance include using heated shields, texturing the process kit, using different material coatings on metal parts to improve thermal expansion coefficient matching, and cracking high-stress films. However, even these approaches can only process wafers below 2K and still require frequent process kit replacement. Summary of the Invention [Problem to be solved by the invention]

[0005] Many chemical vapor deposition (CVD) chambers use a remote plasma source (RPS) to clean and coat the chamber before running a deposition process. However, remote plasma source cleaning is not used in PVD chambers because it is difficult to protect all metal parts in the chamber.

[0006] Therefore, there is a need in the art for a method and apparatus that allows a process kit to operate through its entire target life cycle. [Means for solving the problem]

[0007] One or more embodiments of the present disclosure are directed to a processing chamber. In some embodiments, the processing chamber includes: a target backing plate at a top portion of the processing chamber, where a substrate support has a support surface spaced a distance from the target backing plate to form a processing cavity; a substrate support at a bottom portion of the processing chamber; a deposition ring disposed around the periphery of the substrate support, where the deposition ring has an outer portion with a contoured shape; and a shield forming an outer boundary of the processing cavity, the shield having a top shield edge at the top portion of the processing chamber and a bottom shield edge at the bottom portion of the processing chamber, where the top edge is disposed around the target backing plate and the bottom edge is disposed around the substrate support, where the bottom edge includes a contoured surface with a shape complementary to the outer portion of the deposition ring.

[0008] In some embodiments, the top portion of the processing chamber includes a top gas passage between the periphery of the target backing plate and the top of the shield.

[0009] In some embodiments, the bottom portion of the processing chamber comprises a bottom gas passage between the shield and the deposition ring.

[0010] Another embodiment of the present disclosure relates to a method for cleaning an interior of a chamber, in some embodiments, the method includes closing a bottom gas passage of a processing chamber to a processing cavity, the processing cavity being defined by a substrate support, a target backing plate, and a shield when the processing chamber is in a processing position, flowing an inert gas into the chamber from an inert gas inlet, the chamber being defined by the substrate support, a ground bracket, the shield, an adapter, and a chamber body, flowing a reactant from a reactant inlet into the processing cavity through an opening in the shield, and exhausting the reactant from the processing cavity through a top gas passage, the top gas passage being located in a top portion of the processing chamber and passing over the shield.

[0011] So that the above-enumerated features of the present disclosure can be understood in detail, a more particular description of the present disclosure briefly summarized above can be made by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only typical embodiments of the present disclosure and therefore should not be considered as limiting its scope, as the present disclosure may admit of other equally effective embodiments. The embodiments described herein are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings in which like reference numerals indicate like elements. [Brief explanation of the drawings]

[0012] [Figure 1] 1 is a schematic cross-sectional view of a physical vapor deposition chamber according to one or more embodiments of the present disclosure. [Figure 2] FIG. 1 is a cross-sectional schematic view of a physical vapor deposition chamber according to one or more embodiments of the present disclosure. [Figure 3] FIG. 1 is a cross-sectional schematic view of a physical vapor deposition chamber according to one or more embodiments of the present disclosure. [Figure 4]FIG. 1 is a cross-sectional schematic view of a physical vapor deposition chamber according to one or more embodiments of the present disclosure. [Figure 5] FIG. 1 is a cross-sectional schematic view of a physical vapor deposition chamber according to one or more embodiments of the present disclosure. [Figure 6] FIG. 1 is a cross-sectional schematic view of a physical vapor deposition chamber according to one or more embodiments of the present disclosure. [Figure 7] FIG. 1 is a schematic diagram of a processing chamber and gas flow paths according to one or more embodiments of the present disclosure. [Figure 8] 1 illustrates an in-chamber cleaning method according to one or more embodiments of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0013] In the accompanying drawings, similar components and / or features may have the same reference label. Furthermore, various components of the same type may be distinguished by a dash after the reference label and a second label that distinguishes between the similar components. When only a first reference label is used herein, the description is applicable to any one of the similar components having the same first reference label, regardless of the second reference label.

[0014] Before describing several example embodiments of the present disclosure, it is to be understood that the present disclosure is not limited to the details of construction or process steps set forth in the following description. The present disclosure is capable of other embodiments and of being practiced and carried out in various ways.

[0015] The present disclosure includes methods and apparatus for extending the target life cycle of a process kit. In some embodiments, the method for extending the target life cycle includes cleaning accumulated material from internal processing chamber parts (e.g., process kit parts) using reactive species. In some embodiments, cleaning includes selectively etching and / or sputtering the accumulated material from the internal parts. In some embodiments, the accumulated material includes an accumulated metal film and / or an accumulated dielectric film. In some embodiments, the accumulated dielectric film includes a SiN film.

[0016] In one or more embodiments, the processing chamber is configured to extend the life cycle of the process kit. In some embodiments, the processing chamber operates for substantially the entire target life cycle of the process kit. In some embodiments, the processing chamber performs a SiN process (1500 Å film above 10 K) for a full target life of 3600 KW HR.

[0017] 1 shows a schematic diagram of a processing chamber 100 in accordance with one or more embodiments of the present disclosure. The processing chamber 100 comprises a top portion 101, a bottom portion 102, and at least one processing cavity 103 therebetween.

[0018] The top portion 101 includes a target backing plate 105 facing at least one process cavity 103. In some embodiments, the target backing plate 105 comprises copper chromium (CuCr). In some embodiments, the target backing plate 105 supports a target 107, which faces the process cavity 103. In some embodiments, the target comprises silicon or a derivative thereof. In some embodiments, the top portion 101 further includes a target bond 106. The target bond 106 assists in attaching the target 107 to the target backing plate 105. The target bond 106 is located between the target backing plate 105 and the target 107. The target bond 106 can be any suitable bonding material known to those skilled in the art. In some embodiments, the target bond 106 comprises indium or a derivative thereof.

[0019] The bottom portion 102 includes a substrate support 110 having a support surface 111 spaced a distance from a target backing plate 105 to form a processing cavity 103. In some embodiments, this distance is in the range of 50 mm to 100 mm, 52.5 mm to 100 mm, 55.5 mm to 100 mm, 50 mm to 80 mm, 52.5 mm to 80 mm, 55.5 mm to 80 mm, 50 mm to 60 mm, 52.5 mm to 60 mm, 55.5 mm to 60 mm, or 52.5 mm to 55.5 mm. In some embodiments, the processing cavity 103 has a height of 52.5 mm.

[0020] In some embodiments, the substrate support 110 includes a mounting plate that supports a pedestal and an electrostatic chuck. The electrostatic chuck (ESC) is protected from reactive gases in the process cavity 103 by an electrostatic chuck cover. In some embodiments, the electrostatic chuck (ESC) has a cover that includes a protective wafer. In some embodiments, the protective wafer functions to protect the electrostatic chuck (ESC) from damage by reactive species in the process cavity 103 when in a cleaning mode.

[0021] In some embodiments, a deposition ring 115 is disposed on the outer periphery 112 of the substrate support 110. The deposition ring 115 has a contoured outer portion 116. In some embodiments, the deposition ring 115 comprises aluminum oxide or a derivative thereof.

[0022] The bottom portion 102 includes a ground bracket 125 below the substrate support 110, the deposition ring 115, and the shield 130. In some embodiments, the ground bracket 125 comprises stainless steel. In some embodiments, the ground bracket 125 comprises nickel-plated stainless steel.

[0023] The processing chamber 100 includes a shield 130. The shield 130 forms an outer boundary of the processing cavity 103. In some embodiments, the shield 130 includes a shield top end 131 on the top portion 101 and a shield bottom end 132 on the bottom portion 102. In some embodiments, the shield 130 is a single piece. In some embodiments, the shield top end 131 and the shield bottom end 132 are separate pieces and fastened together by a fastener.

[0024] The shield top edge 131 includes a shape complementary to the groove 108 in the target backing plate 105. The top portion 101 of the processing chamber 100 includes a top gas passage 133 between the groove 108 around the periphery of the target backing plate 105 and the shield top edge 131. In some embodiments, as shown, the target bond 106 extends along the contour of the groove 108 in the backing plate 105.

[0025] A shield bottom edge 132 is disposed around the outer periphery 112 of the substrate support 110. The shield bottom edge 132 includes a contoured surface 134 having a shape complementary to the outer portion 116 of the deposition ring 115. The shield bottom edge 132 and the deposition ring 115 form a bottom gas passage 139. Stated differently, the bottom gas passage 139 extends between the contoured surface 134 of the shield bottom edge 132 and the contoured surface 116 of the deposition ring 115.

[0026] In some embodiments, the bottom portion 102 of the processing chamber 100 defines a bottom gas passage 139 between the shield bottom edge 132 and the deposition ring 115 .

[0027] The processing chamber 100 includes a heater 140. In some embodiments, the heater 140 acts as a large thermal mass to maintain the temperature within the processing cavity 103. The heater 140 is located on the periphery of the shield bottom edge 132. The heater 140 functions to increase the thermal mass capacity of the processing chamber 100. In some embodiments, the heater 140 functions to maintain the temperature of the shield 130 in the range of 150°C to 250°C, or 200°C to 250°C.

[0028] The processing chamber 100 includes an adapter 145. The adapter 145 is located at the periphery of the top portion 101 and contacts and optionally supports the target backing plate 105 and / or the target bond 106. In some embodiments, the adapter 145 extends to the heater 140. In some embodiments, the adapter 145 includes a plenum 146 that is fluidly connected to the processing cavity 103 through a space 152 between the top portion 101 and the shield. In some embodiments, the adapter 145 includes aluminum.

[0029] In one or more embodiments, the processing chamber 100 includes a roughing line 147 connected to a switching valve manifold 148. In some embodiments, the plenum 146 is operably connected to the roughing line 147 with the switching valve manifold 148. The switching valve manifold 148 is connected to a roughing pump 162. The switching valve manifold 148 is configured to allow gas flow from the processing cavity 103 through the top passage 133 and the space 152 to the roughing pump 162 when the switching valve manifold 148 is open, and to prevent flow to the roughing pump 162 when the switching valve manifold 148 is closed. In some embodiments, the processing chamber 100 is configured to allow gas flow through the top passage 133 into the processing cavity 103 when the switching valve manifold 148 is closed. In some embodiments, the switching valve manifold 148 is open during a cleaning mode.

[0030] In one or more embodiments, the processing chamber 100 includes an abatement assembly 163 connected to a roughing pump 162. In a cleaning mode, the roughing pump 162 removes gases from the processing cavity 103 toward the abatement assembly 163 via the top gas passage 133. In one or more embodiments, the processing chamber 100 includes an exhaust assembly 164 connected to the abatement assembly 163. In some embodiments, the exhaust assembly 164 constitutes a house exhaust. In a cleaning mode, the exhaust assembly 164 removes gases from the abatement assembly 163 and the processing chamber 100.

[0031] The processing chamber 100 includes a chamber body 150 that defines an interior volume 151 of the processing chamber. The top of the interior volume 151 is closed by a top portion 101, a bottom portion 102, and a processing cavity 103. In some embodiments, the chamber body 150 supports an adapter 145 from below. The interior volume 151 includes a substrate support 110, a ground bracket 125, a shield 130, and an adapter 145 within the chamber body 150. A bottom gas passage 139 fluidly connects the processing cavity 103 to the interior volume 151 through the space between the shield 130 and the deposition ring 115. In some embodiments, the chamber body 150 includes stainless steel.

[0032] The processing chamber 100 includes a containment O-ring 155 between the shield bottom end 132 and the adapter 145. The containment O-ring 155 functions to prevent any fluid contact between the top gas passage 133 and the interior volume 151 and / or heater 140 through the space between the shield 120 and the adapter 145. In some embodiments, the containment O-ring 155 is resistant to fluoride radicals and / or fluorine sputtering.

[0033] The bottom portion 102 comprises a shaft 153 and a hoop lift component 154. The substrate support 110 and the grounding bracket 150 are disposed on the shaft 153. The shaft 153 is operatively connected to the hoop lift component 154. In some embodiments, the hoop lift component 154 moves the bottom portion 102 up and down.

[0034] In one or more embodiments, the processing chamber 100 includes an inert gas inlet 157. The inert gas inlet 157 functions to maintain a positive pressure within the internal volume 151. The positive pressure within the internal volume 151 prevents gas from leaking into the internal volume 151 from the processing cavity 103 or the space between the shield 130 and the adapter 145. In some embodiments, the inert gas includes argon, nitrogen (N), or a combination thereof. In some embodiments, the inert gas further includes a protective gas. In some embodiments, the protective gas includes oxygen (O) or hydrogen (H).

[0035] In one or more embodiments, the processing chamber 100 includes a turbo pump housing 168 that is fluidly connected to the processing cavity 103 through a bottom channel 139 .

[0036] In one or more embodiments, the processing chamber 100 includes a process gas inlet 158. The process gas inlet 158 ​​includes a process gas inlet valve 149. In some embodiments, a process gas reservoir (not shown) is connected to the process gas inlet valve 149. When in deposition mode, the processing chamber 100 is configured to allow a flow of process gas through the top gas passage 133, the processing cavity 103, and the bottom gas passage 139. In some embodiments, the process gas inlet 158 ​​can be used to supply reactants to the processing cavity 103 via the top gas passage 133.

[0037] In one or more embodiments, the processing chamber 100 includes a reactant inlet 159, which includes a reactant inlet path 160 and a reactant inlet valve 161. The reactant inlet valve 161 is fluidly connected to the processing cavity 103 through the top channel 133. FIG. 2 illustrates one embodiment of the processing chamber 100, which includes the reactant inlet path 160. According to the embodiment of FIG. 2, the reactant inlet path 160 penetrates the adapter 145 and opens into the processing cavity 103 through a hole between the shield top end 131 and the shield bottom end 132. In some embodiments, the processing chamber 100 includes two or more reactant inlets 159. In some embodiments, the processing chamber 100 includes at least two reactant inlets 159. In some embodiments, the processing chamber 100 includes two reactant inlets 159, which are 90° apart. In some embodiments, the reactant inlets 159 include stainless steel.

[0038] In some embodiments, the reactant inlet 159 is connected to a reactant gas reservoir (not shown). In some embodiments, the reactant inlet path 160 is connected to the reactant gas reservoir via a reactant inlet valve 161. In some embodiments, when in a cleaning mode, the reactant inlet valve 161 is opened to establish fluid communication between the process cavity 103 and the reactant gas reservoir. In some embodiments, when in a deposition mode, the reactant inlet valve is closed to block fluid communication between the process cavity 103 and the reactant gas reservoir.

[0039] In another embodiment of the present disclosure, reactant inlet 159 is connected to a remote plasma source (not shown). In some embodiments, reactant inlet passage 160 is connected to the remote plasma source via reactant inlet valve 161. In some embodiments, when in cleaning mode, reactant inlet valve 161 is opened to establish fluid communication between process cavity 103 and the remote plasma source. In some embodiments, when in deposition mode, reactant inlet valve 161 is closed to interrupt fluid communication between process cavity 103 and the remote plasma source.

[0040] 3 and 4 illustrate an embodiment of the present disclosure when the processing chamber 100 is in a processing mode and a cleaning mode, respectively. Accordingly, in some embodiments, the bottom portion 102 includes a sealing bracket 120. The sealing bracket 120 is positioned on the opposite side of the substrate support 110 from the target backing plate 105, such that the deposition ring 115 is between the target backing plate 105 and the sealing bracket 120. In some embodiments, the sealing bracket 120 comprises nickel-plated stainless steel. In some embodiments, a ground bracket 125 is located below the sealing bracket 120. In some embodiments, the sealing bracket 103 is secured to the ground bracket 125 via fasteners 126. In some embodiments, the fasteners 126 comprise stainless steel.

[0041] In some embodiments, the processing chamber 100 includes a bellows assembly 138 connected to or in contact with the shield 130. In some embodiments, the bellows assembly 138 is located on the outer periphery of the shield 130 and below the shield bottom end 132. The bellows assembly 138 includes a top bellows flange 135, a bellows 136, and a bottom bellows flange 137. The top bellows flange 135 is located below the shield bottom end 132 adjacent to the outer contoured surface of the shield bottom end 132. The top bellows flange 135 and the bottom bellows flange 137 support the bellows 136 therebetween. In some embodiments, one or more of the top bellows flange 135 and the bottom bellows flange 137 comprise nickel-plated stainless steel.

[0042] In one or more embodiments, the processing chamber 100 includes an elastomeric sealant between the top bellows flange 135 and the shield bottom end 132. In some embodiments, the elastomeric sealant prevents reactants in the interior volume 151 from leaking through the space between the top bellows flange 135 and the shield bottom end 132. In some embodiments, the elastomeric sealant is resistant to fluoride radicals and / or fluorine sputtering.

[0043] In some embodiments, the bottom gas passage 139 further comprises a gap 141 between the sealing bracket 120 and the bellows assembly 138. Thus, in some embodiments, the bottom gas passage 139 fluidly connects the processing cavity 103 to the interior volume 151 through the space between the shield 130 and the deposition ring 115 and the space between the sealing bracket 120 and the bellows assembly 138.

[0044] 3 illustrates one embodiment in which the processing cavity 103 is fluidly connected to the interior volume 151 via the bottom gas flow passage 139. In some embodiments, the deposition ring 115 and sealing bracket 120 are movable between a processing position (shown in FIG. 3 ), in which there is a gap 141 between the sealing bracket 120 and the deposition ring 115, and a cleaning position (shown in FIG. 4 ), in which the sealing bracket 120 contacts the bellows assembly 138. In some embodiments, the hoop lift component 154 moves the bottom portion 102 upward to bring the sealing bracket 120 into contact with the bottom bellows flange 135, thereby sealing the processing cavity 103. The hoop lift component 154 moves the bottom portion 102 downward to bring the sealing bracket 120 into contact with the bottom bellows flange 137, thereby opening the bottom gas flow passage 141. FIG. 4 shows a sealed processing cavity 103 in which fluid exchange between the processing cavity 103 and the interior volume 151 via the bottom gas passage 139 is prevented.

[0045] Thus, in some embodiments, when the seal bracket 120 and deposition ring 115 are in the processing position, the turbo pump housing 168 is fluidly connected to the processing cavity 103 via the bottom gas flow path 139. When the seal bracket 120 and deposition ring 115 are in the cleaning position, the turbo pump housing 168 is isolated from the processing cavity 103 via the bottom gas flow path.

[0046] 5 and 6 illustrate another embodiment of the present disclosure, in which the processing cavity includes a shutter disk 156. In some embodiments, the shutter disk 156 is located below the shield 130. In some embodiments, one or more of the substrate support 110, the deposition ring 115, or the electrostatic chuck (ESC) are movable between a processing position and a cleaning position. In some embodiments, the shutter disk 156 functions to cut off the fluid connection between the processing cavity 103 and the internal volume 151 when the bottom portion 102 is within the internal volume 151. In some embodiments, a hoop lift component 154 moves one or more of the substrate support 110, the deposition ring 115, or the electrostatic chuck (ESC) downward into the internal volume 151. In some embodiments, the shutter disk 156 functions to cut off the fluid connection between the processing cavity 103 and the internal volume 151 when one or more of the substrate support 110, the deposition ring 115, or the electrostatic chuck (ESC) are within the internal volume 151. In some embodiments, as shown in FIG. 5 , when in the processing position, the shutter disk 156 moves horizontally outward such that the substrate support 110 moves upward to form the processing cavity 103. In some embodiments, as shown in FIG. 6 , when in the cleaning position, the substrate support 110 moves downward such that the shutter disk 156 cuts off the fluid connection between the substrate support 110 and the processing cavity 103. In some embodiments, the hoop lift component 154 moves the bottom portion 102 downward such that the shutter disk 156 cuts off the fluid connection between the substrate support 110 and the processing cavity 103. In some embodiments, the shutter disk 156 slides horizontally so that the hoop lift component 154 moves the bottom portion 102 upward and the substrate support 110 forms the processing cavity 103 .

[0047] In some embodiments, one or more of the shield 130, bellows assembly 138, target backing plate 105, substrate support 110, deposition ring 115, sealing bracket 120, chamber body 150, electrostatic chuck (ESC), shutter disk 156, shaft 153, hoop lift component 154, roughing line 160, target 107, target bond 106, O-ring 155, turbo pump housing 168, mitigation assembly 163, or exhaust assembly 164 are resistant to fluoride radicals and / or fluorine sputtering.

[0048] In some embodiments, one or more of the shield 130, bellows assembly 138, target backing plate 105, substrate support 110, deposition ring 115, seal bracket 120, chamber body 150, electrostatic chuck (ESC), shutter disk 156, shaft 153, hoop lift component 154, roughing line 147, target 107, target bond 106, O-ring 155, turbo pump housing 168, mitigation assembly 163, or exhaust assembly 164 are made of one or more of aluminum, alumina, yttria, and / or nickel-plated SSL.

[0049] FIG. 7 shows a schematic diagram of a processing chamber and gas flow path according to one or more embodiments of the present disclosure. In some embodiments, the plenum 146 is fluidly connected to the roughing pump 162 via an upper gate valve 702 and a throttle valve 704. In some embodiments, a pressure gauge 703 and / or a pressure gauge 707 are disposed along the flow path. When the upper gate valve 702 and the throttle valve 704 are open, gas flows along an outlet path 705 to the roughing pump 162. In some embodiments, the outlet path includes an outlet valve 720. When the upper gate valve 702 and / or the throttle valve 704 are closed, gas flows through the roughing line 147 or the turbo pump housing 168 to the roughing pump 162. In some embodiments, the interior volume 151 is operably connected to the turbo pump housing 168 via a lower gate valve 718. When the lower gate valve 718 is closed, gas flows through the roughing line 147 and the switching valve manifold 148 directly to the roughing pump 162. When the lower gate valve 718 is opened, gas flows through the lower gate valve 718 and turbo pump housing 168, through the turbo pump housing outlet 725 and the switching valve manifold 148 to the roughing pump 162. The switching valve manifold 148 can be used to control whether the gas flows via the switching valve manifold connector path 730, through the roughing line 147, or through the turbo pump housing 168 to the roughing pump 162. The gas flows from the roughing pump 162 to the abatement assembly 163. The gas then flows from the abatement assembly 163 to the exhaust assembly 164 and is exhausted. In some embodiments, the turbo pump housing 168 comprises the turbo pump.

[0050] Another aspect of the present disclosure provides a method for cleaning an interior of a chamber. Figure 8 illustrates one embodiment of a method for cleaning an interior of a chamber 800. According to Figure 8, the method 800 includes, in block 801, closing the bottom gas passage 139, flowing an inert gas into the interior volume 151 through an inert gas inlet to maintain a positive pressure in the interior volume 151 in block 802, flowing a reactant into the process cavity 103 through an opening in the shield 130 from a reactant inlet in block 803, and evacuating the reactant from the process cavity through the top gas passage 133 in block 804.

[0051] In one or more embodiments, during block 801, the sealing bracket 120 moves a distance (e.g., about 2.5 mm vertically) to contact the bellows assembly 138 and close the bottom gas passage 139. In some embodiments, after operation 801, the distance between the target 107 and the substrate support 110 is in the range of 50 mm to 100 mm, 52.5 mm to 100 mm, 55.5 mm to 100 mm, 50 mm to 80 mm, 52.5 mm to 80 mm, 55.5 mm to 80 mm, 50 mm to 60 mm, 52.5 mm to 60 mm, 55.5 mm to 60 mm, or 52.5 mm to 55.5 mm. In some embodiments, after operation 801, the distance between the target 107 and the substrate support 110 is 55.5 mm.

[0052] In one or more embodiments, during block 801, the bottom portion 102 moves downward to the internal volume 151 and the shutter disk 156 moves horizontally to block the fluid connection between the processing cavity 103 and the internal volume 151.

[0053] In one or more embodiments, operation 802 includes flowing Ar, N2, or a combination thereof into the interior volume 151 to maintain a positive pressure. In some embodiments, the positive pressure is in the range of 2 Torr to 3 Torr.

[0054] In one or more embodiments, one or more operations of the method 800 may include, for example, forming a 10 -3 mTorr to 3 Torr, 10 -3 mTorr to 2 Torr, 10 -3 mTorr to 1 Torr, 10 -3 mTorr to 800 mTorr, 10 -3 mTorr to 600 mTorr, 10 -3 mTorr to 400 mTorr, 10 -3 mTorr to 200 mTorr, 10 -3 mTorr to 100 mTorr, 10 -3 mTorr to 1 mTorr, 10 -3 mTorr~10 -2mTorr, 50mTorr~3Torr, 50mTorr~2Torr, 50mTorr~1Torr, 50mTorr~800mTorr, 50mTorr~600mTorr, 50mTorr~400mTorr, 50mTorr~200mTorr, 50mTorr~100mTorr, 100mTorr~ 3Torr, 100mTorr~2Torr, 100mTorr~1Torr, 100mTorr~800mTorr, 100mTorr~600mTorr, 100mTorr~400mTorr, 100mTorr~200mTorr, 200mTorr~3Torr, 200mTorr~2Torr, 200m The cleaning may be performed independently at pressures ranging from 1 Torr to 1 Torr, 200 mTorr to 800 mTorr, 200 mTorr to 600 mTorr, 200 mTorr to 400 mTorr, 400 mTorr to 3 Torr, 400 mTorr to 2 Torr, 400 mTorr to 1 Torr, 400 mTorr to 800 mTorr, 400 mTorr to 600 mTorr, 600 mTorr to 3 Torr, 600 mTorr to 2 Torr, 600 mTorr to 1 Torr, 600 mTorr to 800 mTorr, 800 mTorr to 3 Torr, 800 mTorr to 2 Torr, 800 mTorr to 1 Torr, or 1 Torr to 3 Torr. In some embodiments, the pressure in the chamber during cleaning is higher than the pressure in the process cavity 103. In some embodiments, during cleaning, the pressure in the chamber is higher than the pressure in the process cavity 103 by an amount in the range of 1-3 Torr.

[0055] In some embodiments, during operation 803, the shield 130 is maintained at a temperature in the range of 150°C to 250°C or 200°C to 250°C. In some embodiments, the heater 140 functions to maintain the shield 130 at a temperature in the range of 150°C to 250°C or 200°C to 250°C. In some embodiments, a temperature of the shield 130 in the range of 150°C to 250°C is useful for removing accumulated material. In some embodiments, during operation 803, the substrate support 110 is maintained at a temperature in the range of 150°C to 250°C or 200°C to 250°C. In some embodiments, during operation 803, the target 107 is maintained at a temperature in the range of 30°C to 65°C, 40°C to 65°C, 50°C to 65°C, 30°C to 60°C, 40°C to 60°C, or 50°C to 60°C.

[0056] In one or more embodiments, operation 803 includes flowing a reactant into the process cavity 103. In some embodiments, the reactant includes fluoride radicals. In some embodiments, the fluoride radicals are generated from NF3. In some embodiments, operation 804 selectively etches the build-up material. In some embodiments, the selective etching is performed using fluoride radicals. In some embodiments, the fluoride radicals are thermally generated from NF3 within the process chamber 100. In some embodiments, the fluoride radicals are formed by applying an RF bias to NF3. In some embodiments, the in-chamber cleaning method further includes applying a bias to the substrate support. In some embodiments, the in-chamber cleaning method further includes applying a bias to the pedestal. In some embodiments, the fluoride radicals are generated with radio frequency (RF) power of 13.54 MHz (<1 kW). In some embodiments, the fluoride radicals are generated by applying a bias in a range of 500 W to 1000 W. In some embodiments, the fluoride radicals are generated by applying a bias of 1000 W.

[0057] In some embodiments, the reactant comprises a reactive gas. In some embodiments, the reactive gas is flowed into the process cavity 103 at a volume of 1 liter to 3 liters. In some embodiments, the reactive gas comprises one or more of NF3, oxygen (O2), hydrogen (H2), or argon (Ar). In some embodiments, when in the cleaning mode, 1 liter of NF3 is flowed into the process cavity 103. In some embodiments, when in the cleaning mode, 3 liters of one or more of hydrogen (H2), oxygen (O2), or argon (Ar) are flowed into the process cavity 103. In some embodiments, the reactive gas comprises NF3 and one or more of O2, H2, or Ar. In some embodiments, the reactive gas comprises NF3 and H2, with an NF3:H2 ratio ranging from 1:1 to 1:3. In some embodiments, the reactive gas comprises NF3 and O2, with an NF3:O2 ratio ranging from 1:1 to 1:3. In some embodiments, argon is flowed in parallel with one or more of NF3, H2, or O2.

[0058] In one or more embodiments, the reaction gas further comprises a carrier gas. In some embodiments, the carrier gas comprises an inert gas. In some embodiments, the inert gas comprises Ar. In some embodiments, the inert gas comprises He.

[0059] In some embodiments, the reactant includes fluoride radicals generated in a remote plasma source. In some embodiments, the method includes selectively sputtering a build-up material. In some embodiments, the selective sputtering is performed using fluoride radicals. In some embodiments, the fluoride radicals are injected through the reactant inlet 159. In some embodiments, when in the cleaning mode, the reactant inlet valve 161 is opened to establish fluid communication between the process cavity 103 and the remote plasma source. In some embodiments, when in the deposition mode, the reactant inlet valve 161 is closed.

[0060] In some embodiments, in block 804, the reactants exit the process cavity 103 through the plenum 146 via the top gas passage 133. In some embodiments, the plenum 146 is operably connected to an exhaust assembly 164 via a roughing pump 162 and / or an abatement assembly 163.

[0061] In some embodiments, the method for cleaning the chamber further includes coating one or more of the shield 130, the bellows assembly 138, the target backing plate 105, the substrate support 110, the deposition ring 115, the seal bracket 120, the chamber body 150, the electrostatic chuck (ESC) pad, the shaft 175, the hoop lift component 177, the turbo pump housing 180, the roughing line 147, the target 107, the target bond 106, the containment O-ring 155, the exhaust assembly 164, or the mitigation assembly 163 with a coating material. In some embodiments, the coating material is selected from the group consisting of ZrO, AlO x , YO, or a combination thereof. In some embodiments, the coating material comprises YF, YOF, AlOF, ZrO, ZrO, AlO x , Y2O3 or a combination thereof.

[0062] In one embodiment, accumulated materials within the processing chamber 100 are removed by a chamber cleaning method. In some embodiments, the chamber cleaning method is performed every 300 kWh. In some embodiments, the chamber cleaning method is performed 10 times per target. In some embodiments, the chamber cleaning method is performed every 3 to 4 days.

[0063] In some embodiments, the chamber cleaning method reduces the particle size of the accumulated material to a range of 20 nm to 10 μm.

[0064] In some embodiments, the in-chamber cleaning method extends the target life cycle of the process kit. In some embodiments, the in-chamber cleaning method further includes adjusting process parameters. In some embodiments, the process parameters include magnetron tuning, reactant injection, concentric gas conductance path, or a combination thereof. In some embodiments, the process parameters include spacing between the target and the protective wafer (or substrate support), magnetron tuning, pressure in the process cavity, Ar to N ratio, or DC power.

[0065] In some embodiments, in-chamber cleaning methods performed using in-situ RF NF3 cleaning in PVD and / or remote plasma source fluoride radical cleaning clean the process cavity 103 without opening the process chamber 100 and maintain good particle integrity.

[0066] In the foregoing specification, embodiments of the present disclosure have been described with reference to certain exemplary embodiments thereof. It will be apparent that various modifications may be made thereto without departing from the broader spirit and scope of the embodiments of the present disclosure as set forth in the following claims. The specification and drawings are therefore to be regarded in an illustrative rather than a restrictive sense.

Claims

1. A processing chamber for cleaning, comprising: a target backing plate at a top portion of the processing chamber; a substrate support at a bottom portion of the processing chamber, the substrate support having a support surface spaced a distance from the target backing plate to form a processing cavity; a deposition ring disposed around an outer periphery of the substrate support, the deposition ring having an outer portion with a contoured shape; a shield forming an outer boundary of the processing cavity, the shield having a shield top end at the top portion of the processing chamber and a shield bottom end at the bottom portion of the processing chamber, the shield top end being positioned around the target backing plate and the shield bottom end being positioned around the substrate support, the shield bottom end including a contoured surface having a shape complementary to the outer portion of the deposition ring; a sealing bracket positioned on an opposite side of the substrate support from the target backing plate such that the deposition ring is between the target backing plate and the sealing bracket; a bellows assembly having a top bellows flange, a bellows, and a bottom bellows flange, the top bellows flange mounted adjacent an outer contoured surface of the shield bottom end and positioned below the shield bottom end; Equipped with the top portion of the processing chamber comprising a top gas passage between a periphery of the target backing plate and the top end of the shield; the bottom portion of the processing chamber comprising a bottom gas passage between the shield and the deposition ring; the deposition ring and sealing bracket are movable between a processing position in which there is a gap between the sealing bracket and the deposition ring and a gap between a bottom bellows flange of the bellows assembly and the sealing bracket, and a cleaning position in which the sealing bracket contacts the bottom bellows flange of the bellows assembly. Processing chamber.

2. 10. The processing chamber of claim 1, further comprising a turbo pump housing that is fluidly connected to the processing cavity through a bottom flow path when in the processing position and that is isolated from the processing cavity via the bottom flow path when in the cleaning position.

3. 10. The processing chamber of claim 1, further comprising a roughing pump in fluid communication with the processing cavity through a top channel.

4. 4. The processing chamber of claim 3, further comprising a roughing valve between the roughing pump and the processing cavity, the roughing valve configured to allow gas flow from the processing cavity through an apex flow path to the roughing pump when the roughing valve is open and to prevent flow to the roughing pump when the roughing valve is closed.

5. 5. The processing chamber of claim 4, wherein the processing chamber is configured to allow gas flow through a top channel to the processing cavity when the roughing valve is closed.

6. The processing chamber of claim 5 , wherein the roughing valve is closed when the deposition ring and seal bracket are in the cleaning position.

7. 4. The processing chamber of claim 3, wherein one or more of the shield, the target backing plate, the substrate support, the deposition ring, the sealing bracket, or the turbo pump housing are resistant to fluoride radicals and / or fluorine sputtering.

8. A method for cleaning an inside of a chamber, comprising: closing a bottom gas flow path of the processing chamber to a processing cavity, the processing cavity being defined by a substrate support, a target backing plate, and a shield when the processing chamber is in a processing position; flowing an inert gas through an inert gas inlet into a chamber, the chamber being defined by the substrate support, the ground bracket, the shield, the adapter, and a chamber body; flowing a reactant from a reactant inlet through an opening in the shield into the processing cavity; exhausting the reactants from the processing cavity through a top gas passage, the top gas passage being located in a top portion of the processing chamber, the top gas passage passing over the shield; and A method comprising:

9. 9. The method of claim 8, wherein closing the bottom gas flow path is performed by moving a seal bracket into contact with a bellows assembly, the seal bracket being positioned on an opposite side of the substrate support from the target backing plate such that a deposition ring is between the target backing plate and the seal bracket, and a bellows assembly being connected to the shield.

10. closing the bottom gas flow path; moving the substrate support into the chamber; sliding a shutter disk into the processing cavity from beneath the shield to isolate the chamber from the processing cavity; The method of claim 8, comprising:

11. The reactant is NF 3 , fluoride radical, hydrogen (H 2 ), oxygen (O 2 9. The method of claim 8, comprising:

12. 9. The method of claim 8, wherein one or more of the targets are maintained at a temperature in the range of 40°C to 65°C, the substrate support is maintained at a temperature in the range of 200°C to 250°C, or the shield is maintained at a temperature in the range of 200°C to 250°C.

13. The method of claim 11 , wherein the fluoride radicals are formed by applying an RF bias to a pedestal.

14. 1 liter of NF 3 The method of claim 11 , wherein:

15. 9. The method of claim 8, wherein the method is performed by one or more of: flowing the reactants into the processing cavity at a pressure in the range of 100 mTorr to 1 Torr; or flowing the inert gas into the chamber at a pressure in the range of 2 Torr to 3 Torr.

16. The reactants include fluoride radicals, and the fluoride radicals are generated by NF 3 The method of claim 8 , wherein the compound is produced from

17. further comprising coating one or more of the substrate support, the shield, the deposition ring, the sealing bracket, the bellows assembly, or the target backing plate with a coating material, wherein the coating material is selected from the group consisting of YF, YOF, AlOF, ZrO 2 F, ZrO 2 , AlO x , or Y 2 O 3 9. The method of claim 8, selected from the group consisting of:

18. The method of claim 8 , wherein the accumulated material comprises SiN or a derivative thereof.

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