Nitrogen compound manufacturing method and manufacturing apparatus

By using a gas supply module with controlled plasma and raw material nozzles, the method addresses the challenge of depositing high-quality nitride compound thin films, achieving low defect densities and controlled In content for diverse device applications.

JP7766324B2Active Publication Date: 2025-11-10NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE & TECHNOLOGY
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Patent Information

Application Number
JP2021166589
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2021-10-11
Publication Date
2025-11-10
Estimated Expiration
2041-10-11

AI Technical Summary

Technical Problem

Existing methods struggle to deposit high-quality, defect-free nitride compound thin films, particularly those containing 25% or more In, due to insufficient nitrogen atom density and uncontrollable raw material gas supply during metalorganic vapor phase epitaxy.

Method used

A gas supply module is used with a plasma nozzle and a raw material nozzle arranged to minimize ion bombardment by shortening the distance between the plasma source and substrate, allowing controlled supply of nitrogen-containing active species and raw material gases, forming high-quality nitride compound thin films.

Benefits of technology

This approach enables the production of high-quality nitride compound thin films with controlled In content, achieving low defect densities and improved crystallinity, suitable for various applications including light-emitting and high-frequency devices.

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Abstract

To provide methods and apparatuses for producing a nitrogen compound, with which a high-quality nitrogen compound thin film can be obtained with high efficiency.SOLUTION: Provided are methods and apparatuses for producing a nitrogen compound by means of vapor-phase growth using a gas supply module that has a nozzle surface arranged to face a substrate. A plasma source gas containing elemental nitrogen is changed into a plasma and ejected toward the substrate from a plasma nozzle which has an opening that is arranged in the nozzle surface, and subsequently, a starting material gas is ejected from a starting material nozzle which has an opening on the outer periphery of the plasma nozzle in the nozzle surface, thereby having nitrogen-containing activated species contained in the plasma react with the starting material gas so as to form a film of a nitrogen compound on the substrate.SELECTED DRAWING: Figure 2
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Citation Information

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