Optoelectronic device and method of manufacture in which pixels include light-emitting diodes emitting several colors

Abstract

To provide a light-emitting device that is compact, low-cost and has high light intensity.SOLUTION: An optoelectronic device 10 comprises a plurality of pixels 11 that each comprise at least one primary sub-pixel 11a comprising a primary light-emitting diode 111 formed on a support face 110 of a substrate 101. The primary light-emitting diode is provided with: a first primary semiconductive portion 112 that has a substantially wire-like shape comprising a top end 112a; a primary lattice parameter accommodation layer arranged on the top end of the first primary semiconductive portion; a second primary active semiconductive portion 114 arranged at least on the primary lattice parameter accommodation layer; and a third primary semiconductive portion 115 arranged on the second primary active semiconductive portion. Therein the primary lattice parameter accommodation layer has a first difference in primary lattice parameters between 2.12% and 0.93% relative to the second primary active semiconductive portion in an interface with the second primary active semiconductive portion.SELECTED DRAWING: Figure 9

Description

[Technical Field]

[0001] The present invention relates to an optoelectronic device comprising a plurality of pixels each including at least one primary sub-pixel, the sub-pixel including at least one primary light emitting diode adapted to emit a first light radiation having substantially a first wavelength and formed on a support surface of a substrate.

[0002] The present invention also relates to a method for manufacturing an optoelectronic device comprising a plurality of pixels, wherein forming the plurality of pixels comprises performing a first phase of forming, for each pixel, at least one primary sub-pixel comprising at least one primary light-emitting diode adapted to emit a first light radiation having substantially a first wavelength and formed on a support surface of a substrate.

[0003] The invention finds particular application in display screens or image projection systems. [Background technology]

[0004] "Optoelectronic device" as used herein refers to a device that emits an electrical signal. By "electromagnetic radiation" is meant a device adapted to convert light into electromagnetic radiation, in particular light, which is transmitted through a light source.

[0005] There are optoelectronic devices formed on the support surface of a substrate and comprising light emitting diodes, also known under the acronym LED.

[0006] It is known that each light emitting diode includes an active material that may or may not utilize a quantum well, a semiconductor portion doped according to a first doping type to function as a P-doped connection point, and a semiconductor portion doped according to a second doping type to function as an N-doped connection point.

[0007] Each light-emitting diode may be made on the basis of a micrometric or even nanometric semiconductor wire three-dimensional element, which in turn may be obtained at least in part by growth by epitaxy, or by metalorganic vapor deposition (MOCVD), or by plasma-assisted deposition (PECVD). Typically, light-emitting diodes are made on the basis of semiconductor materials containing elements from groups III and V of the periodic table, such as III-V compounds, in particular gallium nitride (GaN), indium gallium nitride (InGaN) or aluminum gallium nitride (AlGaN).

[0008] The architecture of the three-dimensional light-emitting diode may be of the "core-shell" type, having a first semiconductor portion doped according to a first doping type and in the form of a wire, an active semiconductor portion covering the first portion, and a second semiconductor portion doped according to a second doping type and covering the active portion. The first portion is considered to be the "core", and the active portion and the second doped portion form the "shell" as they surround the first portion.

[0009] A second known architecture is called the "axial structure", in which a first semiconductor part doped according to a first doping type, an active part, and a second semiconductor part doped according to a second doping type are stacked wholly or partly along the longitudinal axis of the light-emitting diode.

[0010] A light-emitting diode having a specific emitting surface through which the light radiation emitted by the light-emitting diode passes. There are optoelectronic devices that include an array of light-emitting diodes. Such optoelectronic devices may be used, inter alia, in the construction of display screens or image projection systems, where the array of light-emitting diodes actually defines an array of light-emitting pixels, each pixel traditionally including at least one subpixel for producing each color, the subpixels themselves including at least one light-emitting diode. A given subpixel may, for example, include up to 100,000 light-emitting diodes. To form an image, the optoelectronic devices may be organized into individual pixels.

[0011] In particular, each pixel conventionally comprises: at least one sub-pixel formed by at least one light emitting diode adapted to directly generate or transmit blue light via a suitable light converter; at least one sub-pixel formed by at least one light emitting diode adapted to directly generate or transmit green light via a suitable light converter; and at least one sub-pixel formed by at least one light emitting diode adapted to directly generate or transmit red light via a suitable light converter.

[0012] A first known solution consists in providing for each pixel at least one light-emitting diode adapted to emit blue light, at least one light-emitting diode adapted to emit green light, and at least one light-emitting diode adapted to emit red light. To achieve this, light-emitting diodes adapted to emit light of a given color are manufactured on the same substrate, which is repeated separately for the three colors. Each substrate is then cut to separate the individual devices. Each pixel is then obtained by mechanical restructuring to associate such individual devices so as to have the three colors.

[0013] This solution, also known under the name "pick and place", is not optimal as it involves many operations, long manufacturing times and high costs, as well as a considerable number of connections. Unfortunately, given the trend towards miniaturization, this solution sometimes proves impossible to implement.

[0014] Another solution consists in providing a light-emitting diode adapted to emit blue light. The latter may include photoluminescent pads acting as color converters, so that the light pixels can emit green and / or red light. These photoluminescent pads are usually formed by a suitable binder matrix.

[0015] Nevertheless, this solution is not entirely satisfactory, since the photoluminescent pads induce high light losses. Generally, the conversion rate of the pads is in practice comprised between 50% and 80%. Furthermore, it remains complex and very expensive to implement, due to the operations dedicated to the production of the photoluminescent pads.

[0016] One difficulty is to achieve that each pixel can directly generate light of different colors, especially blue, green, and red, and especially can be made from materials such as GaN, InGaN, or AIGaN without having to change the fabrication technology from one sub-pixel to another and from one pixel to another.

[0017] Another major difficulty is that the diameter of a light-emitting diode affects the color of the light radiation emitted therefrom. Conventionally, a light-emitting diode emitting red or green light will generally have a larger diameter than a light-emitting diode emitting blue light. In view of the increasing miniaturization of optoelectronic devices, it becomes necessary to obtain light-emitting diodes with diameters in the range of 100 nanometers. Still, obtaining patterns with dimensions in the range of 100 nanometers becomes extremely expensive, especially during the lithography steps that define the position of the light-emitting diodes.

[0018] Another difficulty is that small diameter light emitting diodes have significant structural defects, especially at their tips, due to mismatches in atomic lattices.

[0019] Also, as wired light emitting diodes significantly reduce the size of the wired light emitting diodes, the light intensity emitted by the light emitting diodes significantly reduces. Summary of the Invention [Problem to be solved by the invention]

[0020] SUMMARY OF THE INVENTION It is an object of the present invention to address all or some of the above problems.

[0021] In particular, the object is to provide a solution that addresses at least one of the following objectives: ensure that each pixel directly emits two or three different colors without resorting to "pick and place" techniques; be simple and economical to manufacture; ensure that sub-pixels emitting different colors can be manufactured with the same technology and without mechanical manipulation; ensure high light extraction from each light emitting diode; remove the need for a color converter; avoid the use of light emitting diodes with very small diameters; allow the use of light emitting diodes that all have a substantially similar diameter from one sub-pixel to another. [Means for solving the problem]

[0022] This object may be achieved by an optoelectronic device comprising a plurality of pixels each including at least one primary sub-pixel, the pixels including at least one primary light emitting diode adapted to emit a first light radiation having substantially a first wavelength and formed on a support surface of a substrate. each of the primary light emitting diodes comprises at least one first primary semiconductor portion electrically connected to a first electrode and doped according to a first doping type selected from N-type doping and P-type doping, having a generally wire-shape elongated along a longitudinal axis extending in a first direction generally perpendicular to the support surface of the substrate and including a tip opposite a proximal end facing the support surface of the substrate, at least one primary lattice parameter adjustment layer disposed on and in contact with at least the tip of the first primary semiconductor portion, a second primary active semiconductor portion formed by epitaxial growth from the primary lattice parameter adjustment layer and disposed on and in contact with at least the primary lattice parameter adjustment layer, and a third primary semiconductor portion electrically connected to a second electrode and doped according to a second doping type opposite the first doping type, the second primary active semiconductor portion being configured to emit the first light radiation when at least one of the first electrode and the second electrode is supplied with power. The primary lattice parameter adjustment layer has a first difference in primary lattice parameter relative to the second primary active semiconductor portion, at least at an interface with the second primary active semiconductor portion, the first difference being comprised between 2.12% and 0.93%.

[0023] Some preferred but non-limiting aspects of the optoelectronic device are as follows:

[0024] In one embodiment of the optoelectronic device, the primary lattice parameter adjustment layer has a second difference in primary lattice parameter relative to the first primary semiconductor portion, at least at its interface with the first primary semiconductor portion, of between 1.07% and 2.17%.

[0025] In one embodiment of the optoelectronic device, the primary lattice parameter tuning layer comprises at least one lattice parameter tuning primary sub-layer of a first nature, the lattice parameter tuning primary sub-layer of a first nature being configured such that the first optical radiation that can be emitted by the second primary active semiconductor part formed on and in contact with the lattice parameter tuning primary sub-layer of a first nature is optical radiation having essentially a wavelength comprised between a first minimum value equal to 440 nm and a first maximum value equal to 500 nm. The line structure is configured to be approximately blue in color.

[0026] In an embodiment of an optoelectronic device, the lattice parameter adjusted primary sublayer of said first nature has, at least at its interface with said first primary semiconductor part, a third difference in primary lattice parameter comprised between 1.07% and 0.65% relative to the lattice parameter of said first primary semiconductor part.

[0027] In one embodiment of the optoelectronic device, the first nature lattice parameter adjusting primary sublayer comprises a first alloy of aluminum, gallium, indium and nitrogen, and in particular a gallium fraction that decreases in the first direction and in a direction opposite to the tip of the first primary semiconductor portion.

[0028] In an embodiment of the optoelectronic device, the primary lattice parameter adjustment layer comprises at least one lattice parameter adjustment primary sub-layer of a second nature, the lattice parameter adjustment primary sub-layer of a second nature being configured such that the first light radiation that can be emitted by the second primary active semiconductor part formed on and in contact with the lattice parameter adjustment primary sub-layer of a second nature consists essentially of light rays having a wavelength comprised between a second minimum value equal to 500 nm and a second maximum value equal to 570 nm, and thereby is substantially green in color.

[0029] In one embodiment of the optoelectronic device, the lattice parameter tuning primary sublayer of second nature is disposed on and in contact with at least the lattice parameter tuning primary sublayer of first nature, and the lattice parameter tuning primary sublayer of second nature has, at least at its interface with the lattice parameter tuning primary sublayer of first nature, a fourth difference in primary lattice parameter comprised between 1.71% and 3.22% relative to the lattice parameter of the lattice parameter tuning primary sublayer of first nature.

[0030] In one embodiment of the optoelectronic device, the second nature lattice parameter adjusting primary sublayer comprises a second alloy of gallium, indium and nitrogen, in particular comprising an indium fraction that decreases in the first direction and in a direction opposite to the tip of the first primary semiconductor portion.

[0031] In an embodiment of the optoelectronic device, said primary lattice parameter tuning layer comprises at least one lattice parameter tuning primary sub-layer of a third nature, said lattice parameter tuning primary sub-layer of a third nature being configured in such a way that said first light radiation which may be emitted by said second primary active semiconductor part formed on and in contact with said lattice parameter tuning primary sub-layer of a third nature is essentially composed of light rays having a wavelength comprised between a third minimum value equal to 570 nm and a third maximum value equal to 680 nm, and thereby is substantially red in color.

[0032] In one embodiment of the optoelectronic device, the lattice parameter tuning primary sublayer of the third nature is disposed on and in contact with at least the lattice parameter tuning primary sublayer of the second nature, and the lattice parameter tuning primary sublayer of the third nature has, at least at its interface with the lattice parameter tuning primary sublayer of the second nature, a fifth difference in primary lattice parameter comprised between 1.25% and 1.75% relative to the lattice parameter of the lattice parameter tuning primary sublayer of the second nature.

[0033] In one embodiment of the optoelectronic device, the third nature lattice parameter tuning primary sub-layer comprises a third alloy of gallium, indium and nitrogen.

[0034] In one embodiment of an optoelectronic device, each said pixel comprises at least one secondary sub-pixel adapted to emit second light radiation having a second wavelength substantially different from said first wavelength and including at least one secondary light emitting diode formed on said support surface of said substrate, each said secondary light emitting diode being oriented in a plane substantially parallel to said support surface relative to said first primary semiconductor portion. at least one first secondary semiconductor portion offset with respect to the support surface of the substrate, electrically connected to a first electrode and doped according to a first doping type selected from N-type doping and P-type doping, having a generally wire-like shape elongated along a longitudinal axis extending in the first direction and including a tip opposite a proximal end facing the support surface of the substrate, at least one secondary lattice parameter adjustment layer disposed on and in contact with at least the tip of the first secondary semiconductor portion, a second secondary active semiconductor portion formed by epitaxial growth from the secondary lattice parameter adjustment layer and disposed on and in contact with at least the secondary lattice parameter adjustment layer, and a third secondary semiconductor portion electrically connected to a second electrode and doped according to a second doping type opposite the first doping type, the second secondary active semiconductor portion configured to emit the second optical radiation when at least one of the first electrode and the second electrode is powered. The secondary lattice parameter adjustment layer has a first difference in secondary lattice parameter relative to the second secondary active semiconductor portion, at least at its interface with the second secondary active semiconductor portion, the difference being comprised between 3.51% and 0.30%.

[0035] In one embodiment of the optoelectronic device, the at least one secondary lattice parameter adjustment layer comprises at least one of the following sublayers: a lattice parameter adjustment secondary sublayer of a first nature, such that the second optical radiation that can be emitted by the second secondary active semiconductor portion formed on and in contact with the lattice parameter adjustment secondary sublayer of a first nature consists essentially of light rays having a wavelength comprised between a first minimum value equal to 440 nm and a first maximum value equal to 500 nm, and is thereby configured to be substantially blue; a lattice parameter adjustment secondary sublayer of a second nature, such that the second optical radiation that can be emitted by the second secondary active semiconductor portion formed on and in contact with the lattice parameter adjustment secondary sublayer of a second nature consists essentially of light rays having a wavelength comprised between a second minimum value equal to 500 nm and a second maximum value equal to 570 nm, and is thereby configured to be substantially green. a lattice parameter adjusting secondary sub-layer of a third nature, wherein the second light radiation that can be emitted by the second secondary active semiconductor part formed on and in contact with the lattice parameter adjusting secondary sub-layer of a third nature is configured to be substantially red in color by consisting essentially of light rays having a wavelength comprised between a third minimum value equal to 570 nm and a third maximum value equal to 680 nm.

[0036] In one embodiment of the optoelectronic device, each said pixel comprises at least one tertiary sub-pixel adapted to emit third light radiation having substantially a third wavelength different from said first wavelength and said second wavelength and comprising at least one tertiary light emitting diode formed on said support surface of said substrate. Each of the tertiary light emitting diodes comprises at least one first tertiary semiconductor portion offset with respect to the first primary semiconductor portion and with respect to the first secondary semiconductor portion in a plane generally parallel to the support surface, electrically connected to a first electrode and doped according to a first doping type selected from N-type doping and P-type doping, having a generally wire-shape elongated along a longitudinal axis extending in the first direction and including a tip opposite a proximal end facing the support surface of the substrate; at least one tertiary lattice parameter adjustment layer disposed on and in contact with the tip of at least the first tertiary semiconductor portion; a second tertiary active semiconductor portion formed by epitaxial growth from the tertiary lattice parameter adjustment layer and disposed on and in contact with at least the tertiary lattice parameter adjustment layer; and a third tertiary semiconductor portion electrically connected to a second electrode and doped according to a second doping type opposite the first doping type, disposed on and in contact with at least the second tertiary active semiconductor portion. The second tertiary active semiconductor portion is configured to emit the third optical radiation when at least one of the first electrode and the second electrode is powered, and the tertiary lattice parameter adjustment layer has a first difference in tertiary lattice parameter with respect to the second tertiary active semiconductor portion, at least at an interface with the second tertiary active semiconductor portion, the first difference being comprised between 4.39% and 1.21%. .

[0037] In one embodiment of the optoelectronic device, the at least one tertiary lattice parameter adjustment layer comprises at least one of the following sub-layers: a lattice parameter adjustment tertiary sub-layer of a first nature, whereby the third optical radiation that can be emitted by the second tertiary active semiconductor portion formed on and in contact with the lattice parameter adjustment tertiary sub-layer of a first nature is configured to be substantially blue by consisting essentially of light rays having a wavelength comprised between a first minimum value equal to 440 nm and a first maximum value equal to 500 nm, and a lattice parameter adjustment tertiary sub-layer of a second nature, whereby the third optical radiation that can be emitted by the second tertiary active semiconductor portion formed on and in contact with the lattice parameter adjustment tertiary sub-layer of a second nature is configured to be substantially green by consisting essentially of light rays having a wavelength comprised between a second minimum value equal to 500 nm and a second maximum value equal to 570 nm. Lattice parameter adjustment tertiary sub-layer of a third nature: the third light radiation that can be emitted by the second tertiary active semiconductor part formed on and in contact with the lattice parameter adjustment tertiary sub-layer of a third nature is configured to be substantially red in color by consisting essentially of light rays having a wavelength comprised between a third minimum value equal to 570 nm and a third maximum value equal to 680 nm.

[0038] The present invention also relates to the implementation of a method for manufacturing an optoelectronic device comprising a plurality of pixels, the formation of said plurality of pixels comprising the implementation of a first phase consisting of forming, for each said pixel, at least one primary sub-pixel comprising at least one primary light emitting diode adapted to emit a first light radiation having substantially a first wavelength and formed on a support surface of a substrate, said first phase comprising the following steps: Step a): electrically connecting a first electrode to a first electrode; Step b): forming at least one first primary semiconductor portion on the support surface of the substrate, the first primary semiconductor portion having a generally wire-like shape elongated along a longitudinal axis extending in a first direction generally perpendicular to the support surface of the substrate, the first primary semiconductor portion intended to be connected and doped according to a first doping type selected from N-type doping and P-type doping, and including a tip opposite a proximal end facing the support surface of the substrate. Step c): forming at least one primary lattice parameter adjusting layer on and in contact with the tip of the first primary semiconductor portion. Step d): forming a second primary active semiconductor portion disposed on and in contact with the primary lattice parameter adjusting layer by epitaxial growth from the adjusting layer; forming a third primary semiconductor portion on and in contact with at least the second primary active semiconductor portion, the third primary semiconductor portion being electrically connected to the second primary active semiconductor portion and intended to be doped according to a second doping type opposite to the first doping type; the second primary active semiconductor portion formed in step c) is configured to emit the first light radiation when power is supplied to at least one of the first electrode and the second electrode; and the primary lattice parameter adjustment layer formed in step b) has a first difference in primary lattice parameter with respect to the second primary active semiconductor portion, at least at its interface with the second primary active semiconductor portion formed in step c), comprised between 2.12% and 0.93%.

[0039] Some preferred, but non-limiting aspects of the manufacturing method are as follows:

[0040] In one embodiment of the method, step b) comprises at least one of the following substeps: Substep b1): Formation of at least one lattice parameter adjusting primary sublayer of a first nature, such that the first light radiation that can be emitted by the second primary active semiconductor part formed on and in contact with the lattice parameter adjusting primary sublayer of the first nature in step c) is essentially composed of light rays having a wavelength comprised between a first minimum value equal to 440 nm and a first maximum value equal to 500 nm, and is thereby configured to be substantially blue; Substep b2): Formation of at least one lattice parameter adjusting primary sublayer of a second nature, such that the first light radiation that can be emitted by the second primary active semiconductor part formed on and in contact with the lattice parameter adjusting primary sublayer of the first nature in step c) is essentially composed of light rays having a wavelength comprised between a first minimum value equal to 440 nm and a first maximum value equal to 500 nm, and is thereby configured to be substantially blue; Sub-step b3): Formation of at least one lattice parameter adjustment primary sub-layer of a third nature: the first optical radiation that can be emitted by the second primary active semiconductor part formed on and in contact with the lattice parameter adjustment primary sub-layer of a third nature in step c) is configured to be approximately green by consisting essentially of light rays having a wavelength comprised between a second minimum value equal to 500 nm and a second maximum value equal to 570 nm. Sub-step b4): Formation of at least one lattice parameter adjustment primary sub-layer of a third nature: the first optical radiation that can be emitted by the second primary active semiconductor part formed on and in contact with the lattice parameter adjustment primary sub-layer of a third nature in step c) is configured to be approximately red by consisting essentially of light rays having a wavelength comprised between a third minimum value equal to 570 nm and a third maximum value equal to 680 nm.

[0041] In one embodiment of the method, forming the plurality of pixels includes, essentially simultaneously with the first phase, performing a second phase consisting of forming, for each pixel, at least one secondary sub-pixel including at least one secondary light-emitting diode formed on the support surface of the substrate, the secondary sub-pixel adapted to emit a second light radiation having substantially a second wavelength different from the first wavelength. The second phase includes the following steps: Step e): forming, on the support surface of the substrate in the same manner and simultaneously as step a), a first secondary semiconductor portion having a generally wire-like shape extending along a longitudinal axis extending in the first direction, electrically connected to a first electrode and intended to be doped according to a first doping type selected from N-type doping and P-type doping, the first secondary semiconductor portion including a tip opposite a proximal end facing the support surface of the substrate and offset relative to the first primary semiconductor portion in a plane generally parallel to the support surface of the substrate; Step f): forming at least one secondary lattice parameter adjustment layer on and in contact with the tip of at least the first secondary semiconductor portion formed in step e). Step g): The secondary formed in step f). Step h): forming a second secondary active semiconductor portion electrically connected to a second electrode and contacting the first doping layer by epitaxial growth from the lattice parameter adjustment layer in the same manner as step c) and at the same time; forming a third secondary semiconductor portion on and in contact with at least the second secondary active semiconductor portion, the third secondary semiconductor portion intended to be doped according to a second doping type opposite to the first electrode; the second secondary active semiconductor portion formed in step g) configured to emit the second optical radiation when power is applied to at least one of the first electrode and the second electrode; and the secondary lattice parameter adjustment layer formed in step f) having a first difference in secondary lattice parameter with respect to the second secondary active semiconductor portion, at least at its interface with the second secondary active semiconductor portion formed in step g), comprised between 3.51% and 0.30%.

[0042] In one embodiment of the method, step f) comprises at least one of the following substeps: Substep f1): Formation of at least one lattice parameter adjusting secondary sub-layer of first nature, configured so that the second light radiation that can be emitted by the second secondary active semiconductor part formed on and in contact with said lattice parameter adjusting secondary sub-layer of first nature in step g) is essentially blue by consisting of light rays having a wavelength comprised between a first minimum value equal to 440 nm and a first maximum value equal to 500 nm, similar in composition and thickness to said lattice parameter adjusting primary sub-layer of first nature, and carried out in the same manner and simultaneously as step b1). Sub-step f2): Formation of at least one lattice parameter adjustment secondary sub-layer of a second nature, wherein the second light radiation that can be emitted by the second secondary active semiconductor part formed on and in contact with the lattice parameter adjustment secondary sub-layer of a second nature in step g) is configured to be essentially green by consisting of light rays having a wavelength comprised between a second minimum value equal to 500 nm and a second maximum value equal to 570 nm, and having a composition and thickness similar to the lattice parameter adjustment primary sub-layer of a second nature, and is carried out in the same manner and simultaneously as step b2). Sub-step f3): Formation of at least one lattice parameter adjustment secondary sub-layer of a third nature, wherein the lattice parameter adjustment secondary sub-layer of a third nature is formed on the second secondary active semiconductor part in step g), wherein the second light radiation that can be emitted by the second secondary active semiconductor part formed on and in contact with the second secondary active semiconductor part in step g) is essentially green by consisting of light rays having a wavelength comprised between a second minimum value equal to 500 nm and a second maximum value equal to 570 nm, and the second light radiation that can be emitted by the second secondary active semiconductor part formed in step g) on ​​and in contact with the lattice parameter adjusting secondary sub-layer is configured to be substantially red by consisting essentially of light rays having a wavelength comprised between a third minimum value equal to 570 nm and a third maximum value equal to 680 nm, the composition and thickness of which are similar to those of the third nature lattice parameter adjusting primary sub-layer, and which is carried out in the same manner and simultaneously as step b3).

[0043] In one embodiment of the method, forming the plurality of pixels includes, essentially simultaneously with the first and second phases, performing a third phase consisting of forming, for each pixel, at least one tertiary sub-pixel including at least one tertiary light-emitting diode formed on the support surface of the substrate, the tertiary sub-pixel adapted to emit a third light radiation having substantially a third wavelength different from the first wavelength and the second wavelength. The third phase includes the following steps: Step i): forming, on the support surface of the substrate in the same manner as steps a) and e), a first tertiary semiconductor part having a generally wire-like shape extended along a longitudinal axis extending in the first direction, intended to be electrically connected to a first electrode and doped according to a first doping type selected from N-type doping and P-type doping, the first tertiary semiconductor part including a tip opposite a proximal end facing the support surface of the substrate and offset relative to the first primary semiconductor part and the first secondary semiconductor part in a plane generally parallel to the support surface of the substrate. Step j): forming at least one tertiary lattice parameter adjusting layer on and in contact with the tip of at least the first tertiary semiconductor portion formed in step i); Step k): forming at least one tertiary lattice parameter adjusting layer on and in contact with the tip of at least the first tertiary semiconductor portion formed in step j). A second tertiary active semiconductor portion is formed by epitaxial growth from the tertiary lattice parameter adjustment layer in the same manner as in step c) and step g), the second tertiary active semiconductor portion being disposed on and in contact with the tertiary lattice parameter adjustment layer. Step l): electrically connecting the second electrode forming a third tertiary semiconductor portion on and in contact with at least the second tertiary active semiconductor portion, intended to be connected to and doped according to a second doping type opposite to the first doping type; the second tertiary active semiconductor portion formed in step k) is configured to emit the third light radiation when power is supplied to at least one of the first electrode and the second electrode; and the tertiary lattice parameter adjustment layer formed in step j) has a first difference in tertiary lattice parameter with respect to the second tertiary active semiconductor portion, at least at its interface with the second tertiary active semiconductor portion formed in step k), comprised between 4.39% and 1.21%.

[0044] In one embodiment of the method, step j) comprises at least one of the following substeps: Substep j1): formation of at least one lattice parameter tuning tertiary sub-layer of first nature, configured so that the third light radiation that can be emitted by the second tertiary active semiconductor part formed on and in contact with said lattice parameter tuning tertiary sub-layer of first nature in step k) is essentially blue by consisting of light rays having a wavelength comprised between a first minimum value equal to 440 nm and a first maximum value equal to 500 nm, similar in composition and thickness to said lattice parameter tuning primary sub-layer of first nature and said lattice parameter tuning secondary sub-layer of first nature, carried out simultaneously in the same manner as steps b1) and f1). Sub-step j2): formation of at least one lattice parameter adjustment tertiary sub-layer of a second nature: the third light radiation that can be emitted by the second tertiary active semiconductor part formed on and in contact with the lattice parameter adjustment tertiary sub-layer of the second nature in step k) is configured to be substantially green by consisting essentially of light rays having a wavelength comprised between a second minimum value equal to 500 nm and a second maximum value equal to 570 nm, similar in composition and thickness to the lattice parameter adjustment primary sub-layer of the second nature and the lattice parameter adjustment secondary sub-layer of the second nature, and is carried out simultaneously in the same manner as steps b2) and f2). Sub-step j3): formation of at least one lattice parameter adjustment tertiary sub-layer of a third nature: the third light radiation that can be emitted by the second tertiary active semiconductor part formed on and in contact with the lattice parameter adjustment tertiary sub-layer of the second nature in step k) is substantially green by consisting essentially of light rays having a wavelength comprised between a second minimum value equal to 500 nm and a second maximum value equal to 570 nm, similar in composition and thickness to the lattice parameter adjustment primary sub-layer of the second nature and the lattice parameter adjustment secondary sub-layer of the second nature, and is carried out simultaneously in the same manner as steps b2) and f2). the third light radiation that can be emitted by the second tertiary active semiconductor part formed in step k) and in contact therewith is configured to be substantially red in color by consisting essentially of light rays having a wavelength comprised between a third minimum value equal to 570 nm and a third maximum value equal to 680 nm, the composition and thickness of which are similar to those of the third nature lattice parameter tuning primary sub-layer and the third nature lattice parameter tuning secondary sub-layer, and which are carried out in the same manner and simultaneously as those of steps bc) and fc).

[0045] Other aspects, objects, advantages and features of the present invention will become more apparent from a reading of the following detailed description of preferred embodiments of the invention, given by way of non-limiting example and made with reference to the accompanying drawings, in which: [Brief explanation of the drawings]

[0046] [Figure 1] FIG. 1 shows a schematic cross-sectional view of a light-emitting diode of "core-shell" type architecture according to a first embodiment of the present invention. [Figure 2] FIG. 2 shows a schematic cross-sectional view of an "axial" type light-emitting diode according to a first embodiment of the present invention. [Figure 3] FIG. 3 shows a schematic cross-sectional view of an "axial" type light-emitting diode according to a second embodiment of the present invention. [Figure 4] FIG. 4 shows a schematic cross-sectional view of an "axial" type light-emitting diode according to a third embodiment of the present invention. [Figure 5] FIG. 5 shows a schematic cross-sectional view of an "axial" type light-emitting diode according to a fourth embodiment of the present invention. [Figure 6] FIG. 6 shows a schematic diagram of steps in a manufacturing method according to the present invention, showing in cross section a primary sub-pixel comprising a primary light emitting diode, a secondary sub-pixel comprising a secondary light emitting diode, and a tertiary sub-pixel comprising a tertiary light emitting diode. [Figure 7] FIG. 7 shows a schematic diagram of a further step of a manufacturing method according to the present invention, showing in cross section a primary sub-pixel comprising a primary light emitting diode, a secondary sub-pixel comprising a secondary light emitting diode, and a tertiary sub-pixel comprising a tertiary light emitting diode. [Figure 8] FIG. 8 shows a schematic diagram of another step of a manufacturing method according to the present invention, showing in cross section a primary sub-pixel comprising a primary light emitting diode, a secondary sub-pixel comprising a secondary light emitting diode, and a tertiary sub-pixel comprising a tertiary light emitting diode. [Figure 9] FIG. 9 shows a schematic diagram of an additional step of a manufacturing method according to the present invention, showing in cross section a primary sub-pixel including a primary light emitting diode, a secondary sub-pixel including a secondary light emitting diode, and a tertiary sub-pixel including a tertiary light emitting diode. DETAILED DESCRIPTION OF THE INVENTION

[0047] In the figures and the following description, the same reference numerals represent the same or similar elements. Furthermore, different elements are not drawn to scale to enhance the clarity of the figures. Furthermore, different embodiments and variants are not mutually exclusive and may be combined together.

[0048] In the following description, unless otherwise indicated, the terms "substantially," "about," and "within a range" mean "within 10%."

[0049] For illustrative purposes only, and without any limitation, each of the accompanying figures represents only an assembly including several light-emitting diodes 111, 121, 131. The number of light emitting diodes per sub-pixel 11a, 11b, 11c and the number of pixels are in no way limited.

[0050] First, the present invention includes at least one primary light emitting diode 111 adapted to emit a first optical radiation having substantially a first wavelength and formed on a support surface 110 of a substrate 101. The present invention relates to an optoelectronic device 10 comprising a plurality of pixels 11, each including at least one primary sub-pixel 11a.

[0051] A particularly targeted application, thanks to the three-dimensional light emitting diode arrangement of the present invention, is the provision of an image display screen or image projection device.

[0052] It is clear that the manufacturing method may also relate to other applications, in particular the detection or measurement of electromagnetic radiation, or else photovoltaic applications.

[0053] The optoelectronic device 10 is obtained starting from a substrate 101 having a support surface 110, an element common to the various embodiments.

[0054] The substrate 101 consists, for example, of a stack of a monolithic layer (not shown), a bottom electrode layer (not shown), which may be called a seed layer or a conductive nucleation layer, and a first electrically insulating layer (not shown). Those skilled in the art can refer, for example, to document FR-A1-3053530 for providing such a substrate 101.

[0055] The support surface 110 of the substrate 101 is formed, for example, by the exposed surface of the first electrically insulating layer or nucleation layer.

[0056] The monolithic layer can be formed from a doped or undoped semiconductor material, such as Al2O3 or silicon or even germanium, in particular even monocrystalline silicon. It can also be formed from sapphire or even from a III-V semiconductor material, such as GaN. Alternatively, it can be a silicon-on-insulator type substrate or "SOI". Alternatively, the monolithic layer can be formed in an electrically insulating material.

[0057] The bottom electrode layer may function as a seed layer for the growth of the light emitting diode portion. The bottom electrode layer may be continuous or discontinuous. The material comprising the bottom electrode layer may be a nitride, carbide, or boride of a transition metal from Group IV, V, or VI of the periodic table of the elements, or a combination of these compounds. For example, the bottom electrode layer may be a nitride, carbide, or boride of a transition metal from Group IV, V, or VI of the periodic table of the elements, or a combination of these compounds. For example, the bottom electrode layer may be a nitride of the formula Mg x N y where x is equal to about 3 and y is equal to about 2), aluminum nitride, aluminum oxide, boron, boron nitride, titanium, titanium nitride, tantalum, tantalum nitride, hafnium, hafnium nitride, niobium, niobium nitride, zirconium, zirconium boride, zirconium nitride, silicon carbide, tantalum carbide nitride, or magnesium nitride, for example magnesium nitride, under the formula Mg3N2. The lower electrode layer may be doped and has the same type of conductivity as the semiconductor element intended to be grown, and has a thickness, for example, between 1 nm and 200 nm, preferably between 10 nm and 50 nm. The lower electrode layer may consist of an alloy or a stack of at least one material mentioned in the list above.

[0058] The first electrical insulating layer may include a first intermediate insulating layer covering the lower electrode layer. It forms a growth mask, for example, through openings locally appearing on the surface of the lower electrode layer, allowing epitaxial growth of various light-emitting diodes 111, 121, and 131. The first electrical insulating layer also serves to provide electrical insulation between the first lower electrode (not shown) and the second upper electrode (not shown). The first intermediate insulating layer is made of at least one dielectric, for example, silicon oxide (e.g., SiO2 or SiON) or silicon nitride (e.g., Si3N4 or SiN), or even silicon oxynitride, aluminum oxide (e.g., Al2O3), or hafnium oxide (e.g., HfO2). The thickness of the first intermediate insulating layer may be between 5 nm and 1 μm, preferably between 20 nm and 500 nm, for example, approximately 100 nm.

[0059] The first layer of electrically insulating material may further include a second intermediate electrically insulating layer (not shown) covering the first lower electrode and contributing to providing electrical insulation between the first lower electrode and the second upper electrode. The second intermediate electrically insulating layer may also cover the growth mask formed by the first intermediate insulating layer. The second intermediate insulating layer may be made of the same or a different dielectric as the dielectric of the growth mask, such as silicon oxide (e.g., SiO) or silicon nitride (e.g., SiN or SiN), or even silicon oxynitride, aluminum oxide (e.g., AlO), or hafnium oxide (e.g., HfO). The thickness of the second intermediate insulating layer may be between 5 nm and 1 μm, preferably between 20 nm and 500 nm, e.g., about 100 nm.

[0060] At least one light emitting diode 111 adapted to emit a first light radiation having substantially a first wavelength is formed on the substrate 101. Each light emitting diode 111 has a substantially wire-like shape elongated along a longitudinal axis A extending in a first direction 111a generally perpendicular to the support surface 110 of the substrate 101.

[0061] Each light-emitting diode 111 includes at least one first primary semiconductor portion 112 electrically connected to a first electrode. Typically, each light-emitting diode is connected to a first bottom electrode, whether continuous or not, formed in the substrate (not shown, which may be a seed layer). Those skilled in the art will be able to fabricate the substrate 101 including a suitable bottom electrode with reference to French Patent No. 3053530. The first primary semiconductor portion 112 is doped according to a first doping type selected from N-type doping and P-type doping. The first primary semiconductor portion 112 has a substantially wire-like shape elongated along a longitudinal axis A extending in a first direction 111a substantially perpendicular to the support surface 110 of the substrate 101. The first primary semiconductor portion 112 therefore has a three-dimensional shape with dimensions in the micrometer or nanometer range. Preferably, the first primary semiconductor portion 112 has a substantially wire-like conical or truncated conical shape. In the text, the terms "three-dimensional" or "wired" or "frustum" or "cone" are equivalent. The first primary semiconductor portion 112 includes a tip 112a opposite to a proximal end of the first primary semiconductor portion 112, which faces the support surface 110 of the substrate 101.

[0062] In the description and figures, the embodiment is described with respect to wired light emitting diodes 111, 121, 131.

[0063] By way of example, the first primary semiconductor portion 112, as well as the first secondary semiconductor portion 122 and the first tertiary semiconductor portion 132, may be formed at least in part from a Group IV semiconductor material, such as silicon or germanium, or another material containing primarily a Group III-V compound, e.g., a III-N compound. Examples of Group III elements include gallium, indium, or aluminum. Examples of III-N compounds are GaN, AlN, InGaN, or AlInGaN. Other Group V elements, such as phosphorus, arsenic, or antimony, may also be used. In general, the elements in the III-V compounds may be combined in different mole fractions. It should be noted that the first primary semiconductor portion 112 may independently be formed from a semiconductor material containing primarily II-VI compounds. The dopant may be selected from the group including, for compounds III-V, a Group II P-type dopant, such as magnesium, zinc, cadmium or mercury, a Group IV P-type dopant, such as carbon, or a Group IV N-type dopant, such as silicon, germanium, selenium, sulfur, terbium or tin.

[0064] The right portion of the first primary semiconductor portion 112, which is also valid for the first secondary semiconductor portion 122 and the first tertiary semiconductor portion 132, may have a different shape, such as, for example, an oval, circular, or polygonal shape (e.g., square, rectangular, triangular, hexagonal).

[0065] Generally, the various layers or sublayers that make up the light emitting diodes 111, 121, and 131 are, for example, It can be obtained by any technique known to those skilled in the art, such as, for example, chemical vapor deposition (CVD), atomic layer deposition (ALD) or physical vapor deposition (PVD), but preferably by epitaxy (for example, MBE, MOVPE).

[0066] As shown in FIGS. 1 and 2, each light emitting diode 111 includes at least one primary lattice parameter adjusting layer 113 disposed on and in contact with at least the tip 112 a of the first primary semiconductor portion 112 .

[0067] 1 and 2, each light emitting diode 111 includes at least a second primary active semiconductor portion 114 formed by epitaxial growth from a primary lattice parameter adjusting layer 113. This second primary active semiconductor portion 114 is disposed on and in contact with at least the primary lattice parameter adjusting layer 113.

[0068] As shown in FIGS. 1, 2, and 9, each light-emitting diode 111 includes at least one third primary semiconductor portion 115 electrically connected to the second electrode. This third primary semiconductor portion 115 is doped according to a second doping type opposite to the first doping type. The third primary semiconductor portion 115 is disposed on and contacts at least the second primary active semiconductor portion 114. In one example, this third primary semiconductor portion 115 is identical for at least all of the primary, secondary, and tertiary light-emitting diodes comprising at least one subpixel. This third primary semiconductor portion 115 may be formed from a Group IV semiconductor material, such as silicon or germanium, or from a material primarily containing a III-V compound, such as a III-N compound. Examples of Group III elements include gallium, indium, or aluminum. Examples of III-N compounds are GaN, AlN, InGaN, or AlInGaN. Other Group V elements, such as phosphorus, arsenic, or antimony, may also be used. In general, the elements in compounds III-V may be combined in different mole fractions. It should be noted that the first primary semiconductor portion 112 may independently be formed from a semiconductor material that primarily comprises compounds II-VI. For compounds III-V, the dopant may be selected from the group including a Group II P-type dopant, such as magnesium, zinc, cadmium, or mercury, a Group IV P-type dopant, such as carbon, or a Group IV N-type dopant, such as silicon, germanium, selenium, sulfur, terbium, or tin.

[0069] The second electrode is preferentially transparent and may, in one example, be formed of a transparent conductive oxide such as doped tin oxide, or even doped zinc oxide, covered or partially uncovered with a metal electrode layer.

[0070] The second primary active semiconductor portion 114 is configured to emit the first light radiation when at least one of the first electrode and the second electrode is powered. The emitted color, i.e., the wavelength emitted by the second primary active semiconductor portion 114, depends, inter alia, on its indium concentration. The second primary active semiconductor portion 114 may include means for confining charge carriers, such as single or multiple quantum wells. It may consist, for example, of alternating GaN and InGaN layers having thicknesses of 5 to 20 nm (e.g., 8 nm) and 1 to 15 nm (e.g., 2.5 nm), respectively. The GaN layers may be doped, for example, N-type or P-type. According to another example, the active layer may include a single layer of InGaN having a thickness of, for example, greater than 10 nm.

[0071] The primary lattice parameter adjusting layer 113 has, at least at its interface with the second primary active semiconductor portion 114, a first difference in primary lattice parameter relative to the second primary active semiconductor portion 114 comprised between 2.32% and 0.93%.

[0072] The primary lattice parameter adjusting layer 113 thus configured is a second primary active semiconductor. The first lattice parameter adjusting layer 113 can serve as a basis for epitaxial growth of the second primary active semiconductor portion 114, the indium concentration of which is determined at least in part by a first difference in the primary lattice parameter of the first lattice parameter adjusting layer 113 relative to the second primary active semiconductor portion 114. This is due, inter alia, to the general fact that a change in the indium concentration in the second primary active semiconductor portion 114 will involve a change in the lattice parameter of said second primary active semiconductor portion 114. Thus, during epitaxial formation of the second primary active semiconductor portion 114, atomic species having a lattice parameter that deviates too much from the lattice parameter of the first lattice parameter adjusting layer 113 will readily desorb. Therefore, only alloys that form the second primary active semiconductor portion 114 having a selected indium concentration will be able to grow and form on the primary lattice parameter adjusting layer 113 in a time-tested manner.

[0073] Advantageously, this makes it possible to obtain a second primary active semiconductor part 114 emitting a wavelength selected independently of the diameter of the primary light emitting diode 111 .

[0074] Advantageously, this also makes it possible to obtain in a single phase, in the same reactor, a second active semiconductor part having a different indium content and therefore emitting at a different wavelength.

[0075] Thus, in one example, the primary lattice parameter adjusting layer 113 is made of a material having a difference in lattice parameter comprised between 2% and 2.5% relative to the second primary active semiconductor portion 114, the indium percentage of which is comprised between 13% and 20%. The second primary active semiconductor portion 114 thus obtained is capable of emitting a first radiation comprised between 440 nm and 500 nm and corresponding to a substantially blue light radiation.

[0076] In another example, the primary lattice parameter adjusting layer 113 is made of a material having a difference in lattice parameter comprised between 1.5% and 2% with respect to the second primary active semiconductor part 114, the indium percentage of which is comprised between 20% and 27%, and the second primary active semiconductor part 114 obtained by epitaxy from this primary lattice parameter adjusting layer 113 is adapted to emit radiation comprised between 500 nm and 570 nm and corresponding to a substantially green light emission.

[0077] In another example, the primary lattice parameter adjusting layer 113 is formed in a material having a difference in lattice parameter comprised between 1% and 1.5% with respect to the second primary active semiconductor part 114, the indium percentage of which is comprised between 27% and 40%, and the second primary active semiconductor part 114 obtained by epitaxy from this primary lattice parameter adjusting layer 113 is adapted to emit radiation comprised between 570 nm and 680 nm and corresponding to a substantially red light radiation.

[0078] The primary lattice parameter adjusting layer 113 may, in one example, have a second difference in primary lattice parameter relative to the first primary active semiconductor portion 112, at least at its interface with the first primary active semiconductor portion 112, comprised between 1.07% and 2.17%. In this example, the second difference in primary lattice parameter of 1.07% is the difference between the lattice parameters of GaN and Al 0.1 Ga 0.9 The second difference in the first order lattice parameter of 2.17% corresponds to the difference in the lattice parameter between GaN and ln 0.2 Ga 0.8 N. This may be advantageous so that the primary lattice parameter adjustment layer 113 exhibits no or few defects during formation from the first primary semiconductor portion 112. To allow the above-described first and second primary lattice parameter difference conditions to coexist, it may be advantageous to create an atomic concentration gradient in the primary lattice parameter adjustment layer 113. Thus, in one example, the proportion of gallium or aluminum or indium in the primary lattice parameter adjustment layer 113 may be varied in the first direction 111a and in the first primary semiconductor portion 112. The lattice parameter of the first primary semiconductor portion 112, through the primary lattice parameter adjusting layer 113, to the second primary active semiconductor portion 114 can be varied in a manner that decreases in the direction opposite to the tip 112a, i.e., in the direction tending away from the tip 112a. Advantageously, this allows for a gradual adaptation of the lattice parameter from the first primary semiconductor portion 112, through the primary lattice parameter adjusting layer 113, to the second primary active semiconductor portion 114. Thus, stress is reduced and dislocations are avoided.

[0079] In this document, the term "primary" refers to only the first subpixel in a given pixel, which is intended to emit light according to a first color. The term "secondary" refers to only the second subpixel in a pixel, which is intended to emit light according to a second color different from the first color. The term "tertiary" refers to only the third subpixel in a pixel, which is intended to emit light according to a third color different from the first and second colors. In other words, the terms "primary," "secondary," and "tertiary" do not convey any notion of an order of fabrication or an order of importance between different subpixels.

[0080] 3, the primary lattice parameter adjusting layer 113 comprises at least one first nature lattice parameter adjusting primary sub-layer 113a configured such that a second primary active semiconductor part 114 formed on and in contact with said first nature lattice parameter adjusting primary sub-layer 113a is capable of emitting a first light radiation that is substantially blue by consisting essentially of light rays having a wavelength comprised between a first minimum value equal to 440 nm and a first maximum value equal to 500 nm.

[0081] In one example, the first property lattice parameter adjusted primary sublayer 113a has, at least at its interface with the first primary semiconductor portion 112, a third difference in primary lattice parameter with respect to the lattice parameter of the first primary semiconductor portion 112 comprised between 1.07% and 0.65%.

[0082] In one example, the first property lattice parameter adjusting primary sublayer 113a comprises a first alloy of aluminum, gallium, indium and nitrogen, and in particular comprises a gallium fraction that decreases in the first direction 111a and in a direction opposite to the tip 112a of the first primary semiconductor portion 112.

[0083] 4, the primary lattice parameter adjusting layer 113 comprises at least one lattice parameter adjusting primary sub-layer 113b of a second nature, which is configured in such a way that a first optical radiation that can be emitted by a second primary active semiconductor part 114 formed on and in contact with said lattice parameter adjusting primary sub-layer 113b of a second nature consists essentially of light rays having a wavelength comprised between a second minimum value equal to 500 nm and a second maximum value equal to 570 nm, and thereby is substantially green in color.

[0084] In one example, the second nature lattice parameter-adjusted primary sublayer 113b is disposed on and in contact with at least the first nature lattice parameter-adjusted primary sublayer 113a, and the second nature lattice parameter-adjusted primary sublayer 113b has, at least at its interface with the first nature lattice parameter-adjusted primary sublayer 113a, a fourth difference in primary lattice parameter comprised between 1.71% and 3.22% relative to the lattice parameter of the first nature lattice parameter-adjusted primary sublayer 113a.

[0085] In another example, the second nature lattice parameter adjusting primary sublayer 113b comprises a second alloy of gallium, indium and nitrogen, and in particular comprises an indium fraction that decreases in the first direction 111a and in a direction opposite to the tip 112a of the first primary semiconductor portion 112.

[0086] In a fourth embodiment shown in FIG. 5, the primary lattice parameter adjusting layer 113 comprises at least one a second primary active semiconductor part 114 formed on and in contact with said third nature lattice parameter tuning primary sublayer 113c, adapted, preferably by epitaxy, to emit a first light radiation that is substantially red by consisting essentially of light rays having a wavelength comprised between a third minimum equal to 570 nm and a third maximum equal to 680 nm;

[0087] In one example, the third nature lattice parameter tuning primary sublayer 113c is disposed on and in contact with at least the second nature lattice parameter tuning primary sublayer 113b, and the third nature lattice parameter tuning primary sublayer 113c has, at least at its interface with the second nature lattice parameter tuning primary sublayer 113b, a fifth difference in primary lattice parameter comprised between 1.25% and 1.75% relative to the lattice parameter of the second nature lattice parameter tuning primary sublayer 113b.

[0088] In another example, the third nature lattice parameter adjusting primary sub-layer 113c comprises a third alloy of gallium, indium and nitrogen.

[0089] In the fifth embodiment, each pixel 11 comprises at least one secondary sub-pixel 11b adapted to emit second light radiation having substantially a second wavelength different from the first wavelength and including at least one secondary light-emitting diode 121 formed on the support surface 110 of the substrate 101.

[0090] Each secondary light-emitting diode 121 includes at least one first secondary semiconductor portion 122 that is offset relative to the first primary semiconductor portion 112 in a plane generally parallel to the support surface 110, electrically connected to a first electrode and doped according to a first doping type selected from N-type doping and P-type doping, has a generally wire-like shape extended along a longitudinal axis A extending in a first direction 111 a, and includes a tip 122 a opposite to a proximal end facing the support surface 110 of the substrate 101, and The semiconductor device comprises at least one secondary lattice parameter adjustment layer 123 disposed on and in contact with the end 122a, a second secondary active semiconductor portion 124 formed by epitaxial growth from the secondary lattice parameter adjustment layer 123 and disposed on and in contact with at least the secondary lattice parameter adjustment layer 123, and a third secondary semiconductor portion 125 electrically connected to the second electrode and doped according to a second doping type opposite to the first doping type, and disposed on and in contact with at least the second secondary active semiconductor portion 124.

[0091] The second secondary active semiconductor portion 124 is configured to emit the second optical radiation when at least one of the first electrode and the second electrode is powered.

[0092] The secondary lattice parameter adjusting layer 123 has, at least at the interface with the second secondary active semiconductor portion 124, a first difference in secondary lattice parameter relative to the second secondary active semiconductor portion 124 comprised between 3.51% and 0.30%.

[0093] 9, the at least one secondary lattice parameter adjusting layer 123 comprises at least one of the following sub-layers: a first nature lattice parameter adjusting secondary sub-layer 123a, in which the second optical radiation that can be emitted by the second secondary active semiconductor portion 124 formed on and in contact with the first nature lattice parameter adjusting secondary sub-layer 123a essentially consists of light rays having a wavelength comprised between a first minimum value equal to 440 nm and a first maximum value equal to 500 nm, and is thereby configured to be approximately blue; and a second nature lattice parameter adjusting secondary sub-layer 123b, in which the second optical radiation that can be emitted by the second secondary active semiconductor portion 124 formed on and in contact with the second nature lattice parameter adjusting secondary sub-layer 123b essentially consists of light rays having a wavelength comprised between a second minimum value equal to 500 nm and a second maximum value equal to 570 nm, and is thereby configured to be approximately green. Lattice parameter tuning secondary sub-layer 123c of a third nature: a second optical radiation that can be emitted by a second secondary active semiconductor portion 124 formed on and in contact with said lattice parameter tuning secondary sub-layer 123c of a third nature is configured to be substantially red in color by consisting essentially of light rays having a wavelength comprised between a third minimum value equal to 570 nm and a third maximum value equal to 680 nm.

[0094] Preferably, the third nature lattice parameter adjusting secondary sub-layer 123c is of the same composition as and / or is formed simultaneously with the third nature lattice parameter adjusting primary sub-layer 113c.

[0095] Preferably, the first nature lattice parameter tuning secondary sub-layer 123a is of the same composition as and / or is formed simultaneously with the first nature lattice parameter tuning primary sub-layer 113a.

[0096] Preferably, the second nature lattice parameter adjusting secondary sub-layer 123b is of the same composition as and / or is formed simultaneously with the second nature lattice parameter adjusting primary sub-layer 113b.

[0097] In the seventh embodiment shown in Figure 9, each pixel 11 comprises at least one tertiary sub-pixel 11c adapted to emit a third light radiation having substantially a third wavelength different from the first wavelength and the second wavelength and including at least one tertiary light-emitting diode 131 formed on the support surface 110 of the substrate 101.

[0098] Each tertiary light emitting diode 131 includes at least one first tertiary semiconductor portion 132 that is offset relative to the first primary semiconductor portion 112 and relative to the first secondary semiconductor portion 122 in a plane generally parallel to the support surface 110, that is electrically connected to a first electrode and that is doped according to a first doping type selected from N-type doping and P-type doping, that has a generally wire-like shape elongated along a longitudinal axis A extending in a first direction 111 a, and that includes a tip 132 a opposite to a proximal end facing the support surface 110 of the substrate 101; The semiconductor device comprises at least one tertiary lattice parameter adjustment layer 133 disposed on and in contact with the tip 132a of the conductor portion 132, a second tertiary active semiconductor portion 134 formed by epitaxial growth from the tertiary lattice parameter adjustment layer 133 and disposed on and in contact with at least the tertiary lattice parameter adjustment layer 133, and a third tertiary semiconductor portion 135 electrically connected to the second electrode and doped according to a second doping type opposite to the first doping type, and disposed on and in contact with at least the second tertiary active semiconductor portion 134.

[0099] In this embodiment, the second tertiary active semiconductor portion 134 is configured to emit the third optical radiation when at least one of the first electrode and the second electrode is powered.

[0100] In this embodiment, the tertiary lattice parameter adjustment layer 133 has, at least at its interface with the second tertiary active semiconductor portion 134, a first difference in tertiary lattice parameter comprised between 4.39% and 1.21% relative to the second tertiary active semiconductor portion 134.

[0101] In one example, the at least one tertiary lattice parameter adjustment layer 133 comprises at least one of the following sublayers: a first nature lattice parameter adjustment tertiary sublayer 133a: configured such that a third optical radiation that can be emitted by a second tertiary active semiconductor portion 134 formed on and in contact with said first nature lattice parameter adjustment tertiary sublayer 133a is essentially composed of light rays having a wavelength comprised between a first minimum value equal to 440 nm and a first maximum value equal to 500 nm, and thus is substantially blue; a second nature lattice parameter adjustment tertiary sublayer 133b: configured such that a third optical radiation that can be emitted by a second tertiary active semiconductor portion 134 formed on and in contact with said second nature lattice parameter adjustment tertiary sublayer 133b is essentially composed of light rays having a wavelength comprised between a first minimum value equal to 440 nm and a first maximum value equal to 500 nm, and thus is substantially blue; a third property lattice parameter-adjusted tertiary sub-layer 133c: a third optical radiation that can be emitted by a second tertiary active semiconductor portion 134 formed on and in contact with the third property lattice parameter-adjusted tertiary sub-layer 133c is configured to be substantially red by consisting essentially of light having a wavelength that is comprised between a third minimum value equal to 570 nm and a third maximum value equal to 680 nm.

[0102] Preferably, the third nature lattice parameter adjusting tertiary sub-layer 133c is of the same composition as and / or is formed simultaneously with the third nature lattice parameter adjusting primary sub-layer 113c.

[0103] Preferably, the first nature lattice parameter tuning tertiary sub-layer 133a is of the same composition as and / or is formed simultaneously with the first nature lattice parameter tuning primary sub-layer 113a.

[0104] Preferably, the second nature lattice parameter adjusting tertiary sub-layer 133b is of the same composition as and / or is formed simultaneously with the second nature lattice parameter adjusting primary sub-layer 113b.

[0105] As previously explained, the optoelectronic device 10 obtained with primary, secondary and tertiary light emitting diodes 111, 121, 131 advantageously makes it possible to obtain light emitting diodes of different colors without the use of optical converters, and is cheaper.

[0106] Advantageously, this makes it possible to obtain light-emitting diodes with a larger diameter and thus improve the light intensity, especially for blue light-emitting diodes.

[0107] Another advantage arises from the fact that a single active layer growth step can be used to produce multiple active layer compositions when different modulation layers with different properties are used for different light emitting diodes.

[0108] The present invention also covers a method for manufacturing the optoelectronic device 10, some steps of which are illustrated in FIGS.

[0109] In an optoelectronic device 10 comprising a plurality of pixels 11, the formation of the plurality of pixels 11 includes the implementation of a first phase, which consists of forming, for each pixel 11, at least one primary sub-pixel 11a, which is adapted to emit first light radiation having substantially a first wavelength and includes at least one primary light-emitting diode 111 formed on a support surface 110 of a substrate 101.

[0110] The first phase includes the following steps: Step a): electrically connecting a first electrode to the second electrode; and forming at least one first primary semiconductor portion 112 on the support surface 110 of the substrate 101, the first primary semiconductor portion 112 having a generally wire-like shape elongated along a longitudinal axis A extending in a first direction 111a generally perpendicular to the support surface 110 of the substrate 101, the first primary semiconductor portion 112 including a tip 112a opposite to a proximal end facing the support surface 110 of the substrate 101, the tip 112a being intended to be doped according to a first doping type selected from N-type doping and P-type doping. Step c): forming at least one primary lattice parameter adjusting layer 113 on and in contact with the tip 112a of at least the first primary semiconductor portion 112 formed in step b). Step d): forming a second primary active semiconductor portion 114 electrically connected to the second electrode and having a first doping type and disposed on and in contact with the first lattice parameter adjusting layer 113 by epitaxial growth from the formed primary lattice parameter adjusting layer 113; forms a third primary semiconductor portion 115 on and in contact with at least the second primary active semiconductor portion 114, the third primary semiconductor portion 115 being intended to be doped according to an opposite second doping type.

[0111] The second primary active semiconductor portion 114 formed in step c) is configured to emit said first optical radiation when at least one of the first electrode and the second electrode is powered.

[0112] The primary lattice parameter adjustment layer 113 formed in step b) has, at least at its interface with the second primary active semiconductor portion 114 formed in step c), a first difference in primary lattice parameter relative to the second primary active semiconductor portion 114, the first difference being comprised between 2.12% and 0.93%.

[0113] In one example, step b) includes at least one of the following substeps: Substep b1): Formation of at least one lattice parameter adjustment primary sub-layer 113a of a first nature, whereby a first optical radiation that can be emitted by a second primary active semiconductor portion 114 formed on and in contact with said first lattice parameter adjustment primary sub-layer 113a in step c) is configured to consist essentially of light rays having a wavelength comprised between a first minimum value equal to 440 nm and a first maximum value equal to 500 nm, and thus be approximately blue; and Substep b2): Formation of at least one lattice parameter adjustment primary sub-layer 113b of a second nature, whereby a first optical radiation that can be emitted by a second primary active semiconductor portion 114 formed on and in contact with said second lattice parameter adjustment primary sub-layer 113b in step c) is configured to consist essentially of light rays having a wavelength comprised between a second minimum value equal to 500 nm and a second maximum value equal to 570 nm, and thus be approximately green. Sub-step b3): Formation of at least one lattice parameter adjusted primary sub-layer 113c of a third nature, such that the first light radiation that can be emitted by the second primary active semiconductor part 114 formed in step c) on and in contact with said lattice parameter adjusted primary sub-layer 113c of a third nature is configured to be approximately red in color by consisting essentially of light rays having a wavelength comprised between a third minimum value equal to 570 nm and a third maximum value equal to 680 nm.

[0114] In another example, forming the plurality of pixels 11 includes, essentially simultaneously with the first phase, carrying out a second phase, which consists of forming, for each pixel 11, at least one secondary sub-pixel 11b, the secondary sub-pixel 11b being adapted to emit second light radiation having a second wavelength substantially different from the first wavelength and including at least one secondary light-emitting diode 121 formed on the support surface 110 of the substrate 101.

[0115] The second phase includes the following steps: Step e): Forming, on the support surface 110 of the substrate 101 in the same manner as in step a), first secondary semiconductor portions 122 having a generally wire-like shape extending along a longitudinal axis A extending in a first direction 111a, intended to be electrically connected to the first electrode and doped according to a first doping type selected from N-type doping and P-type doping, the first secondary semiconductor portions 122 including tips 122a opposite to a proximal end facing the support surface 110 of the substrate 101 and offset relative to the first primary semiconductor portions 112 in a plane generally parallel to the support surface 110 of the substrate 101; Step f): Forming at least one secondary lattice parameter adjustment layer 123 on and in contact with the tips 122a of at least the first secondary semiconductor portions 122 formed in step e); Step g): Forming at least one secondary lattice parameter adjustment layer 123 on and in contact with the tips 122a of at least the first secondary semiconductor portions 122 formed in step f). Step h): A second secondary active semiconductor portion 124 is formed by epitaxial growth from the second lattice parameter adjusting layer 123, the second secondary active semiconductor portion 124 being disposed on and in contact with the second lattice parameter adjusting layer 123, at the same time as step c). A third secondary semiconductor portion 125 is formed on and in contact with at least the second secondary active semiconductor portion 124, intended to be doped according to a second doping type opposite the first doping type.

[0116] The second secondary active semiconductor portion 124 formed in step g) is configured to emit the second optical radiation when at least one of the first electrode and the second electrode is powered. It has been done.

[0117] The secondary lattice parameter adjustment layer 123 formed in step f) has a first difference in secondary lattice parameter relative to the second secondary active semiconductor portion 124, at least at the interface with the second secondary active semiconductor portion 124 formed in step g), the first difference being comprised between 3.51% and 0.30%.

[0118] In one example, step f) comprises at least one of the following substeps: Substep f1): Formation of at least one first nature lattice parameter adjusting secondary sublayer 123a, configured so that a second light radiation that can be emitted by a second secondary active semiconductor part 124 formed in step g) on ​​and in contact with said first nature lattice parameter adjusting secondary sublayer 123a is essentially blue by consisting of light rays having a wavelength comprised between a first minimum value equal to 440 nm and a first maximum value equal to 500 nm, and having a composition and thickness similar to that of the first nature lattice parameter adjusting primary sublayer 113a, carried out in the same manner and simultaneously as step b1). Sub-step f2): Formation of at least one lattice parameter adjustment secondary sub-layer 123b of second nature, such that the second light radiation that can be emitted by the second secondary active semiconductor part 124 formed in step g) on ​​and in contact with said lattice parameter adjustment secondary sub-layer 123b of second nature is configured to be essentially green by consisting of light rays having a wavelength comprised between a second minimum value equal to 500 nm and a second maximum value equal to 570 nm, similar in composition and thickness to the lattice parameter adjustment primary sub-layer 113b of second nature, carried out simultaneously in the same manner as step b2). Sub-step f3): Formation of at least one lattice parameter adjustment secondary sub-layer 123c of a third nature, such that the second light radiation that can be emitted by the second secondary active semiconductor part 124 formed in step g) on ​​and in contact with said lattice parameter adjustment secondary sub-layer 123c of a third nature is substantially red in color by consisting essentially of light rays having a wavelength comprised between a third minimum value equal to 570 nm and a third maximum value equal to 680 nm, and similar in composition and thickness to the lattice parameter adjustment primary sub-layer 113c of a third nature, carried out simultaneously in the same manner as step b3).

[0119] In another example, forming the plurality of pixels 11 includes, essentially simultaneously with the first and second phases, performing a third phase, which consists of forming, for each pixel 11, at least one tertiary sub-pixel 11c, the tertiary sub-pixel 11c being adapted to emit a third light radiation having substantially a third wavelength different from the first wavelength and the second wavelength, and including at least one tertiary light-emitting diode 131 formed on the support surface 110 of the substrate 101.

[0120] The third phase includes the following steps: Step i): Forming, on the support surface 110 of the substrate 101 in the same manner as steps a) and e), first tertiary semiconductor portions 132, which have a generally wire-like shape extending along a longitudinal axis A extending in a first direction 111a, intended to be electrically connected to a first electrode and doped according to a first doping type selected from N-type doping and P-type doping, and which include tips 132a opposite to a proximal end facing the support surface 110 of the substrate 101, offset relative to the first primary semiconductor portions 112 and the first secondary semiconductor portions 122 in a plane generally parallel to the support surface 110 of the substrate 101; Step j): Forming at least one tertiary lattice parameter adjustment layer 133 on and in contact with the tips 132a of at least the first tertiary semiconductor portions 132 formed in step i); Step k): Forming the tertiary lattice parameter adjustment layer 133 formed in step j). Step l): A second tertiary active semiconductor portion 134 is formed by epitaxial growth from step 3, the second tertiary active semiconductor portion 134 being disposed on and in contact with the tertiary lattice parameter adjusting layer 133, in the same manner as steps c and g. ... A third tertiary semiconductor portion 135 is formed on and in contact with at least the second tertiary active semiconductor portion 134, intended to be doped according to a second doping type opposite to that of the first tertiary semiconductor portion 134.

[0121] In this example, the second tertiary active semiconductor portion 134 formed in step k) is configured to emit the third optical radiation when power is supplied to at least one of the first electrode and the second electrode.

[0122] Furthermore, the tertiary lattice parameter adjustment layer 133 formed in step j) has a first difference in tertiary lattice parameter relative to the second tertiary active semiconductor portion 134, at least at the interface with the second tertiary active semiconductor portion 134 formed in step k), the first difference being comprised between 4.39% and 1.21%. In a complementary embodiment, step j) comprises at least one of the following substeps: Substep j1): formation of at least one first nature lattice parameter tuning tertiary sublayer 133a, configured so that a third light radiation that can be emitted by a second tertiary active semiconductor part 134 formed in step k) on and in contact with said first nature lattice parameter tuning tertiary sublayer 133a is essentially blue by consisting of light rays having a wavelength comprised between a first minimum value equal to 440 nm and a first maximum value equal to 500 nm, similar in composition and thickness to the first nature lattice parameter tuning primary sublayer 113a and the first nature lattice parameter tuning secondary sublayer 123a, carried out in the same manner and simultaneously as steps b1) and f1). Sub-step j2): formation of at least one lattice parameter adjustment tertiary sub-layer 133b of second nature, such that a third light radiation that can be emitted by the second tertiary active semiconductor part 134 formed in step k) on and in contact with said second nature lattice parameter adjustment tertiary sub-layer 133b is essentially green by consisting of light rays having a wavelength comprised between a second minimum value equal to 500 nm and a second maximum value equal to 570 nm, similar in composition and thickness to the second nature lattice parameter adjustment primary sub-layer 113b and the second nature lattice parameter adjustment secondary sub-layer 123b, carried out in the same manner and simultaneously as step b2) and step f2). Sub-step j3): formation of at least one lattice parameter adjustment tertiary sub-layer 133c of a third nature, wherein a third light radiation that can be emitted by the second tertiary active semiconductor part 134 formed in step k) on and in contact with said lattice parameter adjustment tertiary sub-layer 133c of a third nature is configured to be approximately red in color by consisting essentially of light rays having a wavelength comprised between a third minimum value equal to 570 nm and a third maximum value equal to 680 nm, and which is similar in composition and thickness to the lattice parameter adjustment primary sub-layer 113c of a third nature and to the lattice parameter adjustment secondary sub-layer 123c of a third nature, and which is carried out in the same manner and simultaneously as steps bc) and fc).

[0123] Before carrying out step c), it may be necessary to carry out an etching operation of the third nature lattice parameter tuning primary sublayer 113c and the second nature lattice parameter tuning primary sublayer 113b, which may be carried out for example by means of plasma or by means of a wet process or even by using mechanical-chemical polishing.

[0124] Likewise, before carrying out step g), it may be necessary to carry out an operation for etching the lattice parameter adjusting secondary sublayer of the third nature 123c in order to expose the lattice parameter adjusting secondary sublayer of the second nature 123b. Etching may be carried out, for example, by means of plasma or by means of a wet process or even by using mechanical-chemical polishing.

[0125] The diagrams shown show an axial or "core-shell" type structure, and the invention may relate independently to both types of light-emitting diode structures.

[0126] The first and second electrodes are intentionally not shown; a person skilled in the art would be able to use his knowledge to manufacture them.

[0127] Of course, the invention is not limited to the embodiments shown and described above, but on the contrary covers all variants and combinations thereof.

Claims

1. 1. An optoelectronic device comprising: a primary sub-pixel including at least one primary light emitting diode; and a secondary sub-pixel including at least one secondary light emitting diode formed on a support surface of a substrate, The primary light emitting diode is a first primary semiconductor portion having a wire shape extending from the support surface, the first primary semiconductor portion being doped according to a first doping type; a primary lattice parameter adjustment layer disposed such that at least a portion of the primary lattice parameter adjustment layer is in contact with the top surface and the side surface of the first primary semiconductor portion; a second primary active semiconductor portion epitaxially grown from the primary lattice parameter adjustment layer; a third primary semiconductor portion doped according to a second doping type opposite to the first doping type and disposed over and in contact with the second primary active semiconductor portion; The secondary light-emitting diode is a first secondary semiconductor portion doped according to a first doping type and having a wire shape extending from the support surface; a secondary lattice parameter adjustment layer disposed such that at least a portion of the secondary lattice parameter adjustment layer is in contact with the top surface and the side surface of the first secondary semiconductor portion; a second secondary active semiconductor portion epitaxially grown from the secondary lattice parameter adjustment layer; a third secondary semiconductor portion doped according to a second doping type opposite to the first doping type and disposed over and in contact with the second secondary active semiconductor portion; an optoelectronic device, wherein each of the primary lattice parameter adjustment layer and the secondary lattice parameter adjustment layer includes at least a first sublayer and a second sublayer stacked in sequence, the second primary active semiconductor portion contacting the first sublayer of the primary lattice parameter adjustment layer, and the second secondary active semiconductor portion contacting the second sublayer of the secondary lattice parameter adjustment layer.

2. the second primary active semiconductor portion contacts a top surface of the first sub-layer of the primary lattice parameter adjusting layer; 10. The optoelectronic device of claim 1, wherein the second secondary active semiconductor portion is not in contact with the first sub-layer of the secondary lattice parameter adjusting layer.

3. The optoelectronic device according to claim 1 or 2, wherein the first primary semiconductor portion and the first secondary semiconductor portion have the same composition.

4. the first sub-layer has a difference in lattice parameter relative to the second primary active semiconductor portion at least at its interface with the second primary active semiconductor portion of between 2.12% and 0.93%; 4. An optoelectronic device according to any one of claims 1 to 3, wherein the second sub-layer has a difference in lattice parameter with respect to the second secondary active semiconductor portion, at least at the interface with the second secondary active semiconductor portion, of between 3.51% and 0.30%.

5. the optical radiation that can be emitted by the second primary active semiconductor part is configured to be substantially blue by consisting of light rays having a wavelength comprised between a minimum value equal to 440 nm and a maximum value equal to 500 nm; 5. An optoelectronic device according to any one of claims 1 to 4, wherein the optical radiation that can be emitted by the second secondary active semiconductor part is configured to be substantially green by consisting of light rays having a wavelength comprised between a minimum value equal to 500 nm and a maximum value equal to 570 nm.

6. the first sub-layer has, at least at the interface with the first primary semiconductor portion and the first secondary semiconductor portion, a difference in lattice parameter relative to the lattice parameters of the first primary semiconductor portion and the first secondary semiconductor portion that is comprised between 1.07% and 2.17%; 6. The optoelectronic device of claim 1, wherein the second sublayer has a difference in lattice parameter at its interface with the first sublayer relative to the lattice parameter of the first sublayer that is comprised between 1.71% and 3.22%.

7. The primary lattice parameter adjustment layer and the secondary lattice parameter adjustment layer contain a first alloy of aluminum, gallium, indium and nitrogen, and the gallium ratio decreases from the first primary semiconductor portion and the first secondary semiconductor portion side. An optoelectronic device according to any one of claims 1 to 6.

8. a tertiary sub-pixel formed on the support surface of the substrate, the tertiary sub-pixel including at least one tertiary light emitting diode; The tertiary light emitting diode is a first tertiary semiconductor portion having a wire shape extending from said support surface, said first tertiary semiconductor portion being doped according to a first doping type; a tertiary lattice parameter adjusting layer, at least a portion of which is disposed in contact with the top surface and the side surface of the first tertiary semiconductor portion; a second tertiary active semiconductor portion epitaxially grown from the tertiary lattice parameter adjustment layer; a third tertiary semiconductor portion doped according to a second doping type opposite to the first doping type and disposed over and in contact with the second tertiary active semiconductor portion; The optoelectronic device of any one of claims 1 to 7, wherein the tertiary lattice parameter adjusting layer comprises the first sub-layer, the second sub-layer and a third sub-layer stacked in sequence, and the second tertiary active semiconductor portion contacts the third sub-layer of the tertiary lattice parameter adjusting layer.

9. 9. The optoelectronic device of claim 8, wherein the second tertiary active semiconductor portion is not in contact with the first sub-layer and the second sub-layer of the tertiary lattice parameter adjusting layer.

10. 10. An optoelectronic device according to claim 8 or 9, wherein the third sub-layer has a difference in lattice parameter relative to the second tertiary active semiconductor portion, at least at the interface with the second tertiary active semiconductor portion, comprised between 4.39% and 1.21%.

11. 11. An optoelectronic device according to any one of claims 8 to 10, wherein the optical radiation that can be emitted by the second tertiary active semiconductor part is configured to be substantially red in colour by consisting of light rays having a wavelength comprised between a minimum value equal to 570 nm and a maximum value equal to 680 nm.

12. 12. The optoelectronic device of claim 8, wherein the third sublayer has a difference in lattice parameter at its interface with the second sublayer relative to the lattice parameter of the second sublayer that is comprised between 1.25% and 1.75%.

13. The optoelectronic device according to any one of claims 8 to 12, wherein the tertiary lattice parameter adjustment layer comprises a first alloy of aluminum, gallium, indium and nitrogen, and the gallium ratio decreases from the first tertiary semiconductor portion side.

14. 1. A method for manufacturing an optoelectronic device comprising a primary sub-pixel including at least one primary light emitting diode and a secondary sub-pixel including at least one secondary light emitting diode formed on a support surface of a substrate, the method comprising: forming a semiconductor portion including a first primary semiconductor portion and a first secondary semiconductor portion having a wire shape extending from the support surface of the substrate, the first primary semiconductor portion and the first secondary semiconductor portion being doped according to a first doping type; forming a lattice parameter adjustment layer including a primary lattice parameter adjustment layer and a secondary lattice parameter adjustment layer on the first primary semiconductor portion and the first secondary semiconductor portion, respectively, by sequentially stacking at least a first sub-layer and a second sub-layer on at least upper end surfaces of the first primary semiconductor portion and the first secondary semiconductor portion, and selectively removing at least an upper end portion of the second sub-layer in the first primary semiconductor portion to form the primary lattice parameter adjustment layer with an upper end surface of the first sub-layer exposed; forming a second primary active semiconductor portion by epitaxial growth from the exposed first sub-layer of the primary lattice parameter adjustment layer formed on at least the first primary semiconductor portion; and forming a second secondary active semiconductor portion by epitaxial growth from a secondary lattice parameter adjustment layer formed on the first secondary semiconductor portion, the first sub-layer and the second sub-layer being stacked together.

15. the first sub-layer of the primary lattice parameter adjustment layer and the first sub-layer of the secondary lattice parameter adjustment layer are formed simultaneously; The method of claim 14 , wherein the second sub-layer of the primary lattice parameter adjusting layer and the second sub-layer of the secondary lattice parameter adjusting layer are formed simultaneously.

16. the first sub-layer has a difference in lattice parameter relative to the second primary active semiconductor portion at least at its interface with the second primary active semiconductor portion of between 2.12% and 0.93%; 16. A method for manufacturing an optoelectronic device as claimed in claim 14 and 15, wherein the second sub-layer has a difference in lattice parameter with the second secondary active semiconductor section of between 3.51% and 0.30%, at least at the interface with the second secondary active semiconductor section.

17. forming said second primary active semiconductor portion such that the optical radiation that can be emitted by said second primary active semiconductor portion is substantially blue by consisting of light rays having a wavelength comprised between a minimum value equal to 440 nm and a maximum value equal to 500 nm, 17. Method for manufacturing an optoelectronic device according to any one of claims 14 to 16, wherein the second secondary active semiconductor part is formed such that the optical radiation that can be emitted by the second secondary active semiconductor part consists of light rays having a wavelength comprised between a minimum value equal to 500 nm and a maximum value equal to 570 nm, and thereby is substantially green in colour.

18. the first sub-layer has, at least at the interface with the first primary semiconductor portion and the first secondary semiconductor portion, a difference in lattice parameter relative to the lattice parameters of the first primary semiconductor portion and the first secondary semiconductor portion that is comprised between 1.07% and 2.17%; 18. The method for manufacturing an optoelectronic device according to any one of claims 14 to 17, wherein the second sub-layer has, at its interface with the first sub-layer, a difference in lattice parameter relative to the lattice parameter of the first sub-layer comprised between 1.71% and 3.22%.

19. the optoelectronic device comprises a tertiary sub-pixel including at least one tertiary light emitting diode; In the step of forming the semiconductor portion, a first tertiary semiconductor portion having a wire shape extending from the support surface of the substrate is formed; In the step of forming the lattice parameter adjustment layer, a third sub-layer is stacked on the second sub-layer, and at least an upper end portion of the third sub-layer is selectively removed in the first primary semiconductor portion before at least an upper end portion of the second sub-layer is selectively removed in the first primary semiconductor portion, and at least an upper end portion of the third sub-layer is selectively removed in the first secondary semiconductor portion before forming the second secondary active semiconductor portion, thereby forming a tertiary lattice parameter adjustment layer on the first tertiary semiconductor portion; The method for manufacturing an optoelectronic device according to any one of claims 14 to 18, further comprising the step of forming a second tertiary active semiconductor portion by epitaxial growth from a tertiary lattice parameter adjustment layer in which the first sub-layer, the second sub-layer and the third sub-layer formed on the upper end of the first tertiary semiconductor portion are stacked.

20. the first sub-layer of the primary lattice parameter adjustment layer and the first sub-layer of the secondary lattice parameter adjustment layer are formed simultaneously; the second sub-layer of the primary lattice parameter adjustment layer and the second sub-layer of the secondary lattice parameter adjustment layer are formed simultaneously; 20. The method of claim 19, wherein the third sub-layer of the primary lattice parameter adjustment layer, the third sub-layer of the secondary lattice parameter adjustment layer, and the third sub-layer of the tertiary lattice parameter adjustment layer are formed simultaneously.

21. 21. A method for manufacturing an optoelectronic device according to claim 19 or 20, wherein the third sub-layer has a difference in lattice parameter relative to the second tertiary active semiconductor portion, at least at the interface with the second tertiary active semiconductor portion, comprised between 4.39% and 1.21%.

22. 22. Method for manufacturing an optoelectronic device according to any one of claims 19 to 21, wherein the second tertiary active semiconductor part is formed such that the optical radiation that can be emitted by the second tertiary active semiconductor part is substantially red in colour by consisting of light rays having a wavelength comprised between a minimum value equal to 570 nm and a maximum value equal to 680 nm.

23. 23. The method for manufacturing an optoelectronic device according to any one of claims 19 to 22, wherein the third sub-layer has, at its interface with the second sub-layer, a difference in lattice parameter with respect to the lattice parameter of the second sub-layer that is comprised between 1.25% and 1.75%.

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