Substrate processing method and substrate processing apparatus

Abstract

To provide a substrate processing method and a substrate processing device, capable of reducing particles on a substrate.SOLUTION: The present invention relates to a substrate processing method and a substrate processing device. The substrate processing method is to process a plurality of substrates W housed in one chamber 3 at a time. The substrate processing method includes a first gas processing step, a water repellent processing step, and a spraying step. The first gas processing step supplies a first gas G1 to a substrate W in the chamber 3 with the inside of the chamber 3 being decompressed (state D). The first gas G1 contains gas of an organic solvent. The water repellent processing step is performed after the first gas processing step. In the water repellent processing step, the inside of the chamber 3 is decompressed (state D), and a water repellent agent H is supplied to the substrate W in the chamber 3. The spraying step is performed after the water repellent processing step. In the spraying step, the inside of the chamber 3 is decompressed (state D), and a first liquid L1 is sprayed to the substrate W in the chamber 3. The first liquid L1 contains liquid of the organic solvent.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present invention relates to a substrate processing method and a substrate processing apparatus for substrates such as semiconductor wafers, liquid crystal display substrates, organic electroluminescence (EL) substrates, FPD (Flat Panel Display) substrates, optical display substrates, magnetic disk substrates, optical disk substrates, magneto-optical disk substrates, photomask substrates, and solar cell substrates. [Background technology]

[0002] Patent Document 1 discloses a substrate processing method for processing a substrate accommodated in a chamber. The substrate processing method includes a first step, a second step, and a third step. In the first step, isopropyl alcohol vapor is supplied to the substrate while the interior of the chamber is in a decompressed state. In the second step, a hydrophobizing agent is supplied to the substrate while the interior of the chamber is in a decompressed state. The hydrophobizing agent hydrophobicizes the surface of the substrate. In the third step, isopropyl alcohol vapor is supplied to the substrate while the interior of the chamber is in a decompressed state. In the third step, the hydrophobizing agent is replaced with isopropyl alcohol on the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2018-56155 A Summary of the Invention [Problem to be solved by the invention]

[0004] In conventional substrate processing methods, many particles may adhere to the substrate, which reduces the cleanliness of the substrate and reduces the processing quality of the substrate.

[0005] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a substrate processing method and a substrate processing apparatus that can reduce particles on a substrate. [Means for solving the problem]

[0006] The present inventors conducted extensive research to solve the above problems and have come to the following conclusions. In the second step of the conventional substrate processing method, the hydrophobizing agent comes into contact with the substrate and the isopropyl alcohol on the substrate. This can result in the generation of particles on the substrate. Furthermore, unreacted portions of the hydrophobizing agent can remain on the substrate, resulting in residual particles. In the third step of the conventional substrate processing method, the isopropyl alcohol supplied to the substrate is in a gas phase. Therefore, the amount of isopropyl alcohol that the substrate receives in the third step is small. For example, the mass of isopropyl alcohol that the substrate receives in the third step is small. Because the amount of isopropyl alcohol that the substrate receives is small, particles on the substrate may not be properly removed. As a result, many particles may remain on the substrate.

[0007] Therefore, the inventors have considered modifying the third step. In the modified third step, instead of supplying isopropyl alcohol vapor to the substrate, the substrate is immersed in liquid isopropyl alcohol stored in a processing tank. This modified third step may be able to effectively remove particles from the substrate.

[0008] However, the present inventors have found that the modified third step has a new problem. Specifically, it is difficult to perform the modified third step when the pressure inside the chamber is reduced. It is difficult to prepare a treatment tank containing isopropyl alcohol when the pressure inside the chamber is reduced.

[0009] The present invention was achieved through further intensive research based on these findings and has the following configuration: That is, the present invention is a substrate processing method for simultaneously processing a plurality of substrates accommodated in a single chamber, comprising: a first gas processing step of supplying a first gas containing an organic solvent gas to the substrates in the chamber while the interior of the chamber is depressurized, a water-repellent treatment step of supplying a water-repellent agent to the substrates in the chamber after the first gas processing step while the interior of the chamber is depressurized, and a spraying step of spraying a first liquid containing an organic solvent liquid onto the substrates in the chamber after the water-repellent treatment step while the interior of the chamber is depressurized.

[0010] The substrate processing method processes multiple substrates housed in a single chamber at once. The substrate processing method includes a first gas processing step, a water-repellent processing step, and a spraying step. The first gas processing step, the water-repellent processing step, and the spraying step are performed in this order. The interior of the chamber is decompressed during the first gas processing step, the water-repellent processing step, and the spraying step. In the first gas processing step, a first gas is supplied to the substrate in the chamber. The substrate is exposed to an organic solvent in the first gas. The organic solvent gas in the first gas condenses on the surface of the substrate and turns into a liquid organic solvent on the surface of the substrate. In the water-repellent processing step, a water-repellent agent is supplied to the substrate in the chamber. The substrate is exposed to the water-repellent agent. The water-repellent agent makes the surface of the substrate water-repellent. In the water-repellent processing step, the water-repellent agent comes into contact with the substrate and the organic solvent on the substrate. This may result in the generation of particles on the substrate. In the spraying step, a first liquid is sprayed onto the substrate in the chamber. Even when the pressure inside the chamber is reduced, it is easy to spray the first liquid onto the substrate. The first liquid includes an organic solvent liquid. The substrate receives the first liquid. Because the first liquid is a liquid, the amount of the first liquid that the substrate receives in the spraying process is relatively large. For example, the mass of the first liquid that the substrate receives in the spraying process is relatively large. Therefore, in the spraying process, the first liquid effectively removes particles on the substrate. Therefore, the amount of particles on the substrate is effectively reduced. As a result, the cleanliness of the substrate is effectively improved. The processing quality of the substrate is effectively improved.

[0011] As described above, the substrate processing method can suitably reduce particles on the substrate.

[0012] In the above-described substrate processing method, the spraying step preferably sprays at least one of droplets and a mist of the first liquid, whereby the first liquid is efficiently supplied to the substrate.

[0013] In the above-described substrate processing method, the first liquid is preferably sprayed by at least one of a shower head nozzle and a two-fluid nozzle in the spraying step, whereby the first liquid is efficiently supplied to the substrate.

[0014] In the above-described substrate processing method, it is preferable that the spraying step further comprises moving the substrate up and down or swinging the substrate within the chamber, so that the first liquid adheres more uniformly to the entire surface of the substrate.

[0015] In the above-described substrate processing method, the spraying step preferably includes at least one of a first spraying step and a second spraying step, and the first spraying step preferably sprays a diluted organic solvent as the first liquid, and the second spraying step preferably sprays an undiluted organic solvent as the first liquid. In the first spraying step, the first liquid is a diluted organic solvent. Therefore, the amount of organic solvent used in the first spraying step is preferably reduced. In the second spraying step, the first liquid is an undiluted organic solvent. Therefore, the surface tension of the first liquid is low in the second spraying step. Therefore, the first liquid does not exert a significant force on the substrate in the second spraying step. As a result, the substrate is preferably protected in the second spraying step.

[0016] The above-described substrate processing method preferably further includes a second gas processing step of supplying a second gas containing an organic solvent gas to the substrate in the chamber after the water-repellent processing step while the interior of the chamber is depressurized. In the second gas processing step, the entire substrate is exposed to the second gas. Therefore, in the second gas processing step, the organic solvent derived from the second gas quickly adheres to the entire substrate. In the second gas processing step, the organic solvent derived from the second gas adheres uniformly to the entire substrate. Therefore, in the second gas processing step, the uniformity of the cleanliness of the substrate is improved across the entire substrate.

[0017] In the above-described substrate processing method, the amount of the first liquid supplied in the spraying step is preferably greater than the amount of the second gas supplied in the second gas processing step. In the spraying step, the amount of the first liquid received by the substrate is greater. Therefore, in the spraying step, the first liquid more effectively removes particles on the substrate.

[0018] In the above-described substrate processing method, the spraying step is preferably performed for a longer period of time than the second gas processing step. In the spraying step, the amount of the first liquid received by the substrate is greater. Therefore, particles on the substrate are more effectively removed in the spraying step.

[0019] The above-described substrate processing method preferably further includes a first immersion step of immersing the substrate in a second liquid stored in a processing tank installed in the chamber before the first gas processing step, and the substrate is positioned above the processing tank during the first gas processing step, the water-repellent processing step, and the spraying step. The substrate processing method includes the first immersion step. In the first immersion step, the processing tank stores the second liquid. After the first immersion step, the first gas processing step, the water-repellent processing step, and the spraying step are performed. The interior of the chamber is depressurized during the first gas processing step, the water-repellent processing step, and the spraying step. Therefore, the interior of the chamber is depressurized from the first immersion step until the spraying step. When the interior of the chamber is depressurized, it is difficult to discharge the second liquid out of the chamber. Therefore, when the interior of the chamber is depressurized, it is difficult to replace the second liquid with the first liquid in the processing tank. Therefore, after the first immersion step, it is difficult to use a processing tank to supply the first liquid to the substrate until the spraying step. In the spraying step, the first liquid is sprayed onto the substrate without using a processing tank. Therefore, the first immersion step does not limit the execution of the spraying step. Even if the substrate processing method includes the first immersion step, it is easy to execute the spraying step. In fact, if the substrate processing method includes the first immersion step, the spraying step is significantly useful.

[0020] Furthermore, in the first gas treatment step, the water-repellent treatment step, and the spraying step, the substrate is positioned above the treatment tank. Therefore, in the first gas treatment step, the substrate is preferably exposed to the first treatment gas. In the water-repellent treatment step, the substrate is preferably exposed to the water-repellent agent. In the spraying step, the substrate is preferably exposed to the first liquid.

[0021] The above-described substrate processing method preferably further comprises a first pressurizing step of pressurizing the interior of the chamber from a reduced pressure state to an atmospheric pressure state after the spraying step, and a first draining step of maintaining the interior of the chamber at an atmospheric pressure state and draining the second liquid out of the chamber after the first pressurizing step. The first pressurizing step is performed after the spraying step and before the first draining step. In the first pressurizing step, the interior of the chamber is pressurized from a reduced pressure state to an atmospheric pressure state. Therefore, in the first draining step, it is easy to maintain the interior of the chamber at an atmospheric pressure. When the interior of the chamber is at an atmospheric pressure state, the pressure of the gas inside the chamber is close to the pressure of the gas outside the chamber. Therefore, in the first draining step, it is easy to drain the second liquid inside the chamber to the outside of the chamber.

[0022] In the above-described substrate processing method, it is preferable that in the first drainage step, a drain pipe connected to either the chamber or the processing tank is opened to the atmosphere outside the chamber, and the second liquid is discharged to the outside of the chamber through the drainage pipe. In the first drainage step, the drainage pipe is opened to the atmosphere outside the chamber. As described above, in the first drainage step, the inside of the chamber is at normal pressure. Therefore, in the first drainage step, it is easy to discharge the second liquid from the chamber to the outside of the chamber through the drainage pipe.

[0023] Here, the second liquid in the chamber includes, for example, the second liquid stored in the treatment tank. When the drain pipe is connected to the treatment tank, the second liquid stored in the treatment tank is discharged to the outside of the chamber through the drain pipe. The second liquid in the chamber includes, for example, the second liquid released from the treatment tank and accumulated in the chamber. When the drain pipe is connected to the chamber, the second liquid accumulated in the chamber is discharged to the outside of the chamber through the drain pipe.

[0024] In the above-described substrate processing method, it is preferable that a mixed gas containing an organic solvent and an inert gas is supplied to the substrate in the chamber in the first pressurization step. The inert gas in the mixed gas quickly pressurizes the interior of the chamber from a reduced pressure state to an atmospheric pressure state. The organic solvent in the mixed gas adheres to the substrate in the chamber and wets the substrate. Therefore, the substrate is not dried in the first pressurization step. In summary, in the first pressurization step, the interior of chamber 3 is quickly pressurized from a reduced pressure state D to an atmospheric pressure state J without drying the substrate in chamber 3.

[0025] In the above-described substrate processing method, the mixed gas preferably contains at least one of the organic solvent gas and the organic solvent liquid. When the mixed gas contains the organic solvent gas, the organic solvent gas in the mixed gas condenses on the surface of the substrate and turns into the organic solvent liquid on the surface of the substrate. When the mixed gas contains the organic solvent liquid, the organic solvent liquid in the mixed gas adheres to the surface of the substrate. Whether the mixed gas contains the organic solvent gas or the organic solvent liquid, the organic solvent derived from the mixed gas effectively wets the substrate. Therefore, the mixed gas effectively prevents the substrate from drying.

[0026] The above-described substrate processing method preferably further includes a second immersion step of immersing the substrate in a third liquid stored in the processing tank after the first liquid drainage step. In the second immersion step, the third liquid more effectively removes particles from the substrate. Therefore, the number of particles on the substrate is more effectively reduced.

[0027] In the above-described substrate processing method, the atmosphere in the chamber preferably contains an organic solvent from the first pressurizing step until the substrate is immersed in the third liquid. The organic solvent contained in the atmosphere in the chamber wets the substrate from the first pressurizing step until the substrate is immersed in the third liquid. Therefore, the substrate is not dried after the spraying step and before the second immersion step. Therefore, the substrate is processed with appropriate quality in the second immersion step.

[0028] In the above-described substrate processing method, the third liquid is preferably either a diluted organic solvent or pure water. When the third liquid is a diluted organic solvent, the third liquid appropriately removes particles from the substrate. When the third liquid is pure water, the third liquid also appropriately removes particles from the substrate.

[0029] The present invention is a substrate processing apparatus comprising: a chamber for accommodating a plurality of substrates; a decompression unit for decompressing the interior of the chamber; a first supply unit for supplying a first gas containing an organic solvent gas to the substrate in the chamber; a second supply unit for supplying a water repellent agent to the substrate in the chamber; a spray unit for spraying a first liquid containing an organic solvent liquid to the substrate in the chamber; and a control unit for controlling the decompression unit, the first supply unit, the second supply unit, and the spray unit to perform a first gas treatment, a water repellent treatment, and a spray treatment, wherein in the first gas treatment, the first supply unit supplies the first gas to the substrate when the interior of the chamber is decompressed by the decompression unit; in the water repellent treatment, the second supply unit supplies the water repellent agent to the substrate when the interior of the chamber is decompressed by the decompression unit; and in the spray treatment, the spray unit sprays the first liquid to the substrate when the interior of the chamber is decompressed by the decompression unit.

[0030] The control unit is configured to execute a first gas treatment, a water-repellent treatment, and a spraying treatment. In the first gas treatment, the water-repellent treatment, and the spraying treatment, the decompression unit reduces the pressure inside the chamber. In the first gas treatment, the first supply unit supplies a first gas to the substrate in the chamber. The substrate receives the organic solvent in the first gas. In the water-repellent treatment, the second supply unit supplies a water-repellent agent to the substrate in the chamber. The substrate receives the water-repellent agent. The water-repellent agent makes the surface of the substrate water-repellent. In the water-repellent treatment, the water-repellent agent comes into contact with the substrate and the organic solvent on the substrate. This may result in the generation of particles on the substrate. In the spraying treatment, the spraying unit sprays a first liquid onto the substrate in the chamber. Even when the pressure inside the chamber is reduced, the spraying unit can easily spray the first liquid onto the substrate. The first liquid includes an organic solvent liquid. The substrate receives the first liquid. The amount of the first liquid that the substrate receives in the spraying treatment is relatively large. For example, the mass of the first liquid that the substrate receives in the spraying process is relatively large. Therefore, in the spraying process, the first liquid effectively removes particles on the substrate. Therefore, the amount of particles on the substrate is effectively reduced. As a result, the cleanliness of the substrate is effectively improved. The processing quality of the substrate is effectively improved.

[0031] As described above, the substrate processing apparatus can suitably reduce particles on the substrate. [Effects of the Invention]

[0032] According to the substrate processing method and substrate processing apparatus of the present invention, particles on a substrate can be suitably reduced. [Brief explanation of the drawings]

[0033] [Figure 1] FIG. 2 is a front view showing the inside of the substrate processing apparatus according to the first embodiment. [Figure 2] FIG. 2 is a control block diagram of the substrate processing apparatus. [Figure 3] 3 is a flowchart showing the procedure of a substrate processing method according to the first embodiment. [Figure 4] 4(a) to 4(e) are each a schematic view of a substrate processing apparatus 1 in a substrate processing method. [Figure 5] FIG. 10 is a front view showing the inside of a substrate processing apparatus according to a second embodiment. [Figure 6] 10 is a flowchart showing the procedure of a substrate processing method according to a second embodiment. [Figure 7] 10 is a flowchart showing the procedure of a substrate processing method according to a second embodiment. [Figure 8] 8(a) to 8(e) are each a schematic view of a substrate processing apparatus 1 in a substrate processing method. [Figure 9] 9(a) to 9(e) are each a schematic view of a substrate processing apparatus 1 in a substrate processing method. [Figure 10] 10(a) to 10(e) are each a schematic view of a substrate processing apparatus 1 in a substrate processing method. [Figure 11] 11(a) to 11(c) are each a schematic view of a substrate processing apparatus 1 in a substrate processing method. DETAILED DESCRIPTION OF THE INVENTION

[0034] A substrate processing method and a substrate processing apparatus according to the present invention will be described below with reference to the drawings.

[0035] 1. First Embodiment <1-1. Overview of substrate processing equipment> FIG. 1 is a front view showing the inside of a substrate processing apparatus 1 according to a first embodiment. The substrate processing apparatus 1 processes substrates W. The processes performed by the substrate processing apparatus 1 include a drying process. The processes performed by the substrate processing apparatus 1 may further include a cleaning process. The substrate processing apparatus 1 is classified as a batch type. The substrate processing apparatus 1 processes multiple substrates W at once.

[0036] The substrate W is, for example, a semiconductor wafer, a substrate for a liquid crystal display, a substrate for an organic EL (electroluminescence), a substrate for an FPD (flat panel display), a substrate for an optical display, a substrate for a magnetic disk, a substrate for an optical disk, a substrate for a magneto-optical disk, a substrate for a photomask, or a substrate for a solar cell.

[0037] The substrate W has a thin, flat plate shape and is substantially circular in front view.

[0038] The substrate W has a surface, which includes at least one of a silicon oxide film, a polysilicon film, a silicon nitride film, and a metal film.

[0039] Although not shown, the substrate W has a pattern. The pattern is formed on the surface of the substrate W. The pattern has an uneven shape. The surface of the substrate W on which the pattern is formed is called a pattern formation surface.

[0040] The substrate processing apparatus 1 includes a chamber 3. The chamber 3 accommodates a plurality of substrates W. The chamber 3 accommodates a plurality of substrates W at once. The substrates W are disposed inside the chamber 3. Specifically, the chamber 3 is a container that defines a space 5. The space 5 corresponds to the interior of the chamber 3. The substrates W are disposed in the space 5.

[0041] The chamber 3 is configured to be openable and closable. When the chamber 3 is open, the space 5 is released. When the chamber 3 is open, the chamber 3 allows the substrate W to move between the space 5 and the outside of the chamber 3. When the chamber 3 is closed, the space 5 is sealed. That is, the chamber 3 is configured to be sealable.

[0042] The substrate processing apparatus 1 includes a processing tank 11. The processing tank 11 is installed in a chamber 3. The processing tank 11 stores a processing liquid. The processing tank 11 is open upward.

[0043] The substrate processing apparatus 1 includes a holding unit 13. The holding unit 13 is installed in the chamber 3. The holding unit 13 holds multiple substrates W at once. The holding unit 13 holds each substrate W in a substantially vertical position. When the holding unit 13 holds a substrate W, the pattern formation surface of the substrate W is substantially vertical. When the holding unit 13 holds multiple substrates W, the multiple substrates W are lined up in a row in the direction X. The direction X is horizontal. The direction X is substantially perpendicular to the pattern formation surface of the substrate W.

[0044] In addition to direction X, FIG. 1 also shows direction Y and direction Z. Direction Y is horizontal. Direction Y is perpendicular to direction X. Direction Z is vertical. Direction Z is perpendicular to direction X. Direction Z is perpendicular to direction Y. Direction Z is referred to as vertical direction Z for convenience.

[0045] The substrate processing apparatus 1 includes a lifting mechanism 15. The lifting mechanism 15 lifts and lowers the holding part 13. The lifting mechanism 15 moves the holding part 13, for example, in the vertical direction Z. When the lifting mechanism 15 lifts and lowers the holding part 13, the substrate W held by the holding part 13 lifts and lowers integrally with the holding part 13.

[0046] The lifting mechanism 15 moves the substrate W to a first position P1 and a second position P2. FIG. 1 shows the substrate W at the first position P1 using a solid line. FIG. 1 shows the substrate W at the second position P2 using a dashed line. The first position P1 is located within the chamber 3. The first position P1 is located above the processing bath 11. When the substrate W is located at the first position P1, the entire substrate W does not come into contact with the processing liquid in the processing bath 11. The second position P2 is located within the chamber 3. The second position P2 is located below the first position P1. The second position P2 is located within the processing bath 11. When the substrate W is located at the second position P2, the entire substrate W is immersed in the processing liquid in the processing bath 11.

[0047] The substrate processing apparatus 1 includes supply units 21, 31, 41, 51, and 61. The supply unit 21 supplies an inert gas to the chamber 3. The supply unit 31 supplies a water repellent to the chamber 3. The supply unit 41 supplies a processing gas to the chamber 3. The supply unit 51 supplies a first liquid to the chamber 3. The supply unit 61 supplies a second liquid to the processing tank 11.

[0048] When the substrate W is located at position P1, the supply unit 21 supplies an inert gas to the substrate W. When the substrate W is located at position P1, the supply unit 31 supplies a water repellent agent to the substrate W. When the substrate W is located at position P1, the supply unit 41 supplies a processing gas to the substrate W. When the substrate W is located at position P1, the supply unit 51 supplies a first liquid to the substrate W.

[0049] The supply unit 41 is an example of a first supply unit in the present invention. The supply unit 31 is an example of a second supply unit in the present invention. The supply unit 51 is an example of a sprinkling unit in the present invention.

[0050] The inert gas supplied by the supply unit 21 is, for example, nitrogen gas.

[0051] The water repellent agent supplied by the supply unit 31 will now be described. The water repellent agent makes the surface of the substrate W water repellent. The water repellent agent modifies the surface of the substrate W to make it water repellent. The water repellent agent increases the contact angle between the surface of the substrate W and water. The water repellent agent forms a water repellent film on the surface of the substrate W. The surface of the substrate W is coated with the water repellent agent. The water repellent agent is also called an interface modifier. The water repellent agent is also called a hydrophobizing agent.

[0052] The water repellent agent includes, for example, at least one of a silicon-based water repellent agent and a metal-based water repellent agent. The silicon-based water repellent agent makes silicon water repellent. The silicon-based water repellent agent makes compounds containing silicon water repellent. The silicon-based water repellent agent is, for example, a silane coupling agent. The silane coupling agent includes, for example, at least one of hexamethyldisilazane (HMDS), tetramethylsilane (TMS), fluorinated alkylchlorosilane, alkyldisilazane, and a non-chlorinated water repellent agent. The non-chlorinated water repellent agent includes, for example, at least one of dimethylsilyldimethylamine, dimethylsilyldiethylamine, hexamethyldisilazane, tetramethyldisilazane, bis(dimethylamino)dimethylsilane, N,N-dimethylaminotrimethylsilane, N-(trimethylsilyl)dimethylamine, and an organosilane compound. The metal-based water repellent agent makes metal water repellent. The metal-based water repellent agent makes compounds containing metal water repellent. The metal-based water repellent agent contains, for example, at least one of an amine having a hydrophobic group and an organic silicon compound.

[0053] The water repellent may further contain a solvent. For example, the solvent may dilute at least one of a silicon-based water repellent and a metal-based water repellent. The solvent preferably has compatibility with organic solvents. For example, the solvent may contain at least one of isopropyl alcohol (IPA) and propylene glycol monomethyl ether acetate (PGMEA).

[0054] The water repellent agent includes at least one of a gaseous water repellent agent and a liquid water repellent agent. The supply unit 31 supplies at least one of a gaseous water repellent agent and a liquid water repellent agent. For example, the gaseous water repellent agent is vapor of the water repellent agent.

[0055] The process gas supplied by the supply unit 41 will be described. The process gas contains an organic solvent gas. For example, the organic solvent gas is organic solvent vapor. For example, the concentration of the organic solvent in the process gas is high. For example, the process gas is substantially composed of only an organic solvent gas. For example, the process gas does not substantially contain water (water vapor). It is preferable that the organic solvent in the process gas is hydrophilic. For example, the organic solvent in the process gas is isopropyl alcohol (IPA).

[0056] The treatment gas does not contain a water repellent agent.

[0057] The first liquid supplied by the supply unit 51 will be described below. The first liquid includes an organic solvent liquid. For example, the first liquid consists essentially of only an organic solvent liquid. For example, the first liquid is an undiluted organic solvent liquid. For example, the first liquid is an undiluted organic solvent liquid. For example, the first liquid is substantially free of water. Alternatively, the first liquid is a diluted organic solvent liquid. For example, the first liquid is an organic solvent diluted with pure water. For example, the first liquid is a mixed liquid of pure water and an organic solvent. For example, the organic solvent in the first liquid is isopropyl alcohol (IPA).

[0058] The first liquid does not contain a water repellent agent.

[0059] The second liquid supplied by the supply unit 61 will now be described. For example, the second liquid is a rinse liquid. For example, the second liquid is deionized water (DIW).

[0060] The structures of the supply units 21, 31, 41, 51, and 61 are illustrated.

[0061] The supply unit 21 includes a discharge section 22, a pipe 23, and a valve 24. The discharge section 22 discharges an inert gas. The supply unit 21 includes a pipe 23 and a valve 24. The pipe 23 is connected to the discharge section 22. The pipe 23 is further connected to a supply source 25. The supply source 25 stores the inert gas. The valve 24 is provided on the pipe 23. When the valve 24 is open, the inert gas flows from the supply source 25 to the discharge section 22 through the pipe 23. When the valve 24 is open, the discharge section 22 discharges the inert gas. When the valve 24 is closed, the inert gas does not flow from the supply source 25 to the discharge section 22 through the pipe 23. When the valve 24 is closed, the discharge section 22 does not discharge the inert gas.

[0062] Similarly, supply units 31, 41, 51, 61 each include a discharge part 32, 42, 52, 62, a pipe 33, 43, 53, 63, and a valve 34, 44, 54, 64. Discharge part 32 discharges a water repellent. Discharge part 42 discharges a processing gas. Discharge part 52 discharges a first liquid. Discharge part 62 discharges a second liquid. Pipes 33, 43, 53, 63 are connected to discharge parts 32, 42, 52, 62, respectively. Pipes 33, 43, 53, 63 are connected to supply sources 35, 45, 55, 65, respectively. Supply source 35 stores a water repellent. Supply source 45 stores a processing gas. Supply source 55 stores the first liquid. Supply source 65 stores the second liquid. Valves 34, 44, 54, and 64 are provided in the pipes 33, 43, 53, and 63, respectively. The valves 34, 44, 54, and 64 control the discharge from the discharge portions 32, 42, 52, and 62, respectively.

[0063] Discharge units 22, 32, 42, 52, and 62 are each installed in chamber 3. Discharge units 22, 32, 42, and 52 are each disposed at a position higher than processing tank 11. Discharge unit 22 is disposed on both sides of substrate W located at first position P1 in direction Y. Discharge units 32, 42, and 52 are also disposed in the same manner as discharge unit 22. Discharge unit 62 is disposed in processing tank 11.

[0064] Discharge unit 22 includes a tubular member. The tubular member extends in direction X. The tubular member has a plurality of discharge ports (not shown). The plurality of discharge ports are aligned in direction X. Discharge unit 22 blows out the inert gas from the plurality of discharge ports. Discharge units 32 and 42 have a structure similar to that of discharge unit 22.

[0065] The discharge unit 52 sprays the first liquid into the chamber 3. For example, the discharge unit 52 sprays at least one of droplets and a mist of the first liquid into the chamber 3. For example, the discharge unit 52 sprays the first liquid over a wide angle. For example, the discharge unit 52 distributes the first liquid over a wide range.

[0066] For example, the discharge unit 52 includes a plurality of shower head nozzles (for example, 20 shower head nozzles). The plurality of shower head nozzles are arranged in two rows in the direction X. Each shower head nozzle has a plurality of discharge ports (not shown). Each shower head nozzle discharges the first liquid from the plurality of discharge ports. Each shower head nozzle discharges the first liquid in a shower-like manner. Each shower head nozzle sprays a large number of droplets of the first liquid.

[0067] Supply source 45 may generate the process gas in addition to storing the process gas. Although not shown, supply source 45 includes, for example, a tank and a heater. The tank is connected in communication with pipe 43. The tank stores the organic solvent liquid. The heater warms the organic solvent liquid in the tank. In the tank, the organic solvent liquid evaporates and becomes organic solvent vapor. That is, the process gas is generated in the tank.

[0068] The substrate processing apparatus 1 includes a decompression unit 81. The decompression unit 81 reduces the pressure inside the chamber 3. Specifically, the decompression unit 81 exhausts the gas inside the chamber 3 to the outside of the chamber 3. When the decompression unit 81 reduces the pressure inside the chamber 3, the pressure of the gas inside the chamber 3 may or may not continue to decrease. When the decompression unit 81 reduces the pressure inside the chamber 3, the pressure of the gas inside the chamber 3 may be maintained within a predetermined negative pressure range, for example.

[0069] The structure of the decompression unit 81 is illustrated. The decompression unit 81 includes a pipe 82 and an exhaust pump 83. The pipe 82 and the exhaust pump 83 are provided outside the chamber 3. The pipe 82 is connected in communication with the chamber 3. The exhaust pump 83 is provided in the pipe 82. The exhaust pump 83 is, for example, a vacuum pump. When the decompression unit 81 operates, the exhaust pump 83 exhausts gas from the chamber 3 to the outside of the chamber 3 via the pipe 82. When the decompression unit 81 stops operating, the exhaust pump 83 does not exhaust gas from the chamber 3 to the outside of the chamber 3.

[0070] 2 is a control block diagram of the substrate processing apparatus 1. The substrate processing apparatus 1 includes a control unit 101. The control unit 101 controls each element of the substrate processing apparatus 1. Specifically, the control unit 101 controls the lifting mechanism 15. The control unit 101 controls the supply units 21, 31, 41, 51, and 61. The control unit 101 controls the valves 24, 34, 44, 54, and 64. The control unit 101 controls the decompression unit 81. The control unit 101 controls the exhaust pump 83.

[0071] The control unit 101 is realized by a central processing unit (CPU) that executes various processes, a random-access memory (RAM) that serves as a work area for the processes, a storage medium such as a fixed disk, etc. The control unit 101 has various types of information pre-stored in the storage medium. The information held by the control unit 101 is, for example, processing information for controlling the substrate processing apparatus 1. The processing information is also called a processing recipe.

[0072] <1-2. Operation example of substrate processing equipment> A wet etching process is performed on the substrate W in an apparatus (not shown) different from the substrate processing apparatus 1. The wet etching process is, for example, a process of supplying an etching liquid to the substrate W. The substrate W is then transported to the substrate processing apparatus 1. The chamber 3 is opened. A plurality of substrates W enter the chamber 3. The holder 13 receives the plurality of substrates W. With the substrates W accommodated in the chamber 3, the chamber 3 is closed.

[0073] With the chamber 3 closed, the substrate processing apparatus 1 performs a substrate processing method on the substrates W. The substrate processing method is to simultaneously process a plurality of substrates W accommodated in the chamber 3. A specific example of the substrate processing method is given below.

[0074] 3 is a flowchart showing the steps of the substrate processing method of the first embodiment. The substrate processing method includes a first immersion step, a first gas processing step, a water-repellent processing step, a spraying step, and a drying step. The first immersion step, the first gas processing step, the water-repellent processing step, the spraying step, and the drying step are performed in this order.

[0075] FIG. 4(a) is a diagram schematically illustrating the substrate processing apparatus 1 in a first immersion step. FIG. 4(b) is a diagram schematically illustrating the substrate processing apparatus 1 in a first gas processing step. FIG. 4(c) is a diagram schematically illustrating the substrate processing apparatus 1 in a water-repellent processing step. FIG. 4(d) is a diagram schematically illustrating the substrate processing apparatus 1 in a spraying step. FIG. 4(e) is a diagram schematically illustrating the substrate processing apparatus 1 in a drying step. FIGS. 4(a)-4(e) each show a simplified view of the substrate processing apparatus 1. For example, FIGS. 4(a)-4(e) each omit illustration of the holding unit 13 and the lifting mechanism 15. In the following description, each element of the substrate processing apparatus 1 operates under the control of the control unit 101.

[0076] Step S1: First immersion step 4(a), the processing tank 11 stores the second liquid L2 supplied from the supply unit 61. The lifting mechanism 15 moves the substrate W to the second position P2. The substrate W is immersed in the second liquid L2 in the processing tank 11.

[0077] Step S2: First gas treatment step (first gas treatment) Referring to FIG. 4(b), the supply unit 41 supplies a processing gas into the chamber 3. In this specification, the processing gas supplied to the chamber 3 in the first gas processing step is referred to as the "first gas G1" as appropriate. The decompression unit 81 is activated. That is, the decompression unit 81 depressurizes the interior of the chamber 3. "VAC" in FIG. 4(b) indicates that the decompression unit 81 is in operation. The interior of the chamber 3 is in a decompressed state D. When the interior of the chamber 3 is in the decompressed state D, the gas pressure in the chamber 3 is negative. An atmosphere of the first gas G1 is formed in the chamber 3. The lifting mechanism 15 moves the substrate W from the second position P2 to the first position P1. The substrate W is lifted up from the second liquid L2 in the processing bath 11. In the decompressed state D of the chamber 3, the supply unit 41 supplies the first gas G1 to the substrate W in the chamber 3. The substrate W is exposed to the first gas G1. The organic solvent gas contained in the first gas G1 condenses on the surface of the substrate W. That is, the organic solvent gas contained in the first gas G1 changes into liquid organic solvent on the surface of the substrate W. The liquid organic solvent originating from the first gas G1 adheres to the substrate W. The organic solvent originating from the first gas G1 removes the second liquid L2 on the substrate W. Because the chamber 3 is in a reduced pressure state D, the second liquid L2 is quickly replaced by the organic solvent on the substrate W. The liquid organic solvent originating from the first gas G1 covers the surface of the substrate W.

[0078] Step S3: Water-repellent treatment process (water-repellent treatment) Referring to FIG. 4(c), the substrate W is located at the first position P1. The decompression unit 81 is in operation. The interior of the chamber 3 is maintained in a decompressed state D. The supply unit 41 stops supplying the first gas G1. The supply unit 31 supplies the water repellent agent H to the substrate W in the chamber 3. The water repellent agent H adheres to the substrate W. When the supply unit 31 supplies the gas of the water repellent agent H, the gas of the water repellent agent H condenses on the surface of the substrate W and turns into liquid water repellent agent H on the surface of the substrate W. When the supply unit 31 supplies the liquid water repellent agent H, the liquid water repellent agent H adheres to the surface of the substrate W. Because the interior of the chamber 3 is in a decompressed state D, the organic solvent liquid is quickly replaced by the water repellent agent H on the substrate W. The water repellent agent H covers the surface of the substrate W. The water repellent agent H makes the substrate W water repellent.

[0079] A portion of the water repellent agent H on the substrate W changes into a water repellent film. The water repellent film is formed on the surface of the substrate W. Another portion of the water repellent agent H on the substrate W becomes an unreacted portion of the water repellent agent H. The unreacted portion of the water repellent agent H does not react and remains on the substrate W. The unreacted portion of the water repellent agent H is also called a residual portion of the water repellent agent H or an excess portion of the water repellent agent H. Furthermore, another portion of the water repellent agent H on the substrate W may change into particles. Particles are also called foreign matter. Particles derived from the water repellent agent H are generated, for example, when the water repellent agent H comes into contact with an organic solvent. Particles derived from the water repellent agent H are generated, for example, when the water repellent agent H comes into contact with the substrate W. Furthermore, the unreacted portion of the water repellent agent H may become particles derived from the water repellent agent H.

[0080] Step S4: Spraying process (spraying processing) Referring to FIG. 4(d), the substrate W is located at the first position P1. The decompression unit 81 is in operation. The interior of the chamber 3 is maintained in a decompressed state D. The supply unit 31 stops supplying the water repellent agent H. The supply unit 51 sprays the first liquid L1 onto the substrate W in the chamber 3. The supply unit 51 sprays, for example, droplets of the first liquid L1 or at least a mist of the first liquid L1. The supply unit 51 sprays the first liquid L1 using, for example, a shower head nozzle. The first liquid L1 adheres to the substrate W. The first liquid L1 removes any unreacted water repellent agent H on the substrate W. The first liquid L1 also removes particles derived from the water repellent agent H on the substrate W. Because the interior of the chamber 3 is in a decompressed state D, the water repellent agent H on the substrate is quickly replaced with the first liquid L1. Since the chamber 3 is in a reduced pressure state D, particles originating from the water repellent agent H also quickly leave the substrate W. The surface of the substrate W is covered with the first liquid L1.

[0081] In the spraying step, the lifting mechanism 15 may keep the substrate W stationary at the first position P1. Alternatively, in the spraying step, the lifting mechanism 15 may move the substrate W up and down. For example, the lifting mechanism 15 may move the substrate W up and down near the first position P1. For example, the lifting mechanism 15 may move the substrate W up and down in the vertical direction Z. Alternatively, the lifting mechanism 15 may further include a mechanism (not shown) that oscillates the substrate W. The lifting mechanism 15 may oscillate the substrate W using this mechanism. When the substrate W moves up and down or oscillates, the entire substrate W is preferably exposed to the first liquid L1. When the substrate W moves up and down or oscillates, the first liquid L1 adheres more uniformly to the entire surface of the substrate W.

[0082] Step S5: Drying process The substrate W is located at the first position P1. The decompression unit 81 is in operation. The interior of the chamber 3 is maintained in a decompressed state D. The supply unit 51 stops spraying the first liquid L1. The supply unit 21 supplies the inert gas N to the substrate W. The substrate W is exposed to the inert gas N. The inert gas N removes the first liquid L1 on the substrate W. By removing the first liquid L1 from the substrate W, the substrate W is dried.

[0083] Here, the substrate W is made water-repellent. Therefore, when the first liquid L1 is removed from the substrate W, the force that the first liquid exerts on the substrate W is small. Because the interior of the chamber 3 is in a reduced pressure state D, the first liquid L1 is removed from the substrate W in a short time. Therefore, when the first liquid L1 is removed from the substrate W, the force that the first liquid exerts on the substrate W is even smaller. Therefore, when the first liquid L1 is removed from the substrate W, the substrate W is suitably protected. When the first liquid L1 is removed from the substrate W, the pattern on the substrate W is suitably protected. For example, when the first liquid L1 is removed from the substrate W, collapse of the pattern is suitably prevented.

[0084] Although not shown in the figure, after the drying process, the inside of the chamber 3 is pressurized. For example, the supply unit 61 supplies the inert gas N, and the decompression unit 81 stops operating. This increases the pressure inside the chamber 3. The inside of the chamber 3 changes from the decompressed state D to an atmospheric pressure state.

[0085] The normal pressure state will now be described. When the inside of chamber 3 is in a normal pressure state, it means that the gas pressure inside chamber 3 is normal pressure. Normal pressure is not a single specific value, but a range defined by two different values. Normal pressure is higher than the gas pressure inside chamber 3 when the inside of chamber 3 is in a reduced pressure state D. Normal pressure is close to the gas pressure outside chamber 3. For example, normal pressure is substantially equal to the gas pressure outside chamber 3. For example, normal pressure includes standard atmospheric pressure (1 atmosphere, 101,325 Pa).

[0086] After the chamber 3 is brought to a normal pressure state, the chamber 3 is opened, and the substrate W in the chamber 3 is carried out of the chamber 3.

[0087] <1-3. Effects of the First Embodiment> The substrate processing method includes a first gas processing step, a water-repellent processing step, and a spraying step. In the first gas processing step, the interior of the chamber 3 is in a reduced-pressure state D, and a first gas G1 is supplied to the substrate W in the chamber 3. The first gas G1 contains an organic solvent gas. The water-repellent processing step is performed after the first gas processing step. In the water-repellent processing step, the interior of the chamber 3 is in a reduced-pressure state D, and a water-repellent agent H is supplied to the substrate W in the chamber 3. The spraying step is performed after the water-repellent processing. In the spraying step, the interior of the chamber 3 is in a reduced-pressure state D, and a first liquid L1 is sprayed onto the substrate W in the chamber 3. Even when the interior of the chamber 3 is in a reduced-pressure state D, it is easy to spray the first liquid L1 onto the substrate W. The first liquid L1 contains an organic solvent liquid. Because the first liquid is a liquid, the density of the first liquid L1 is relatively high. For example, the density of the first liquid L1 is greater than the density of the first gas G1. For this reason, the amount of the first liquid L1 that the substrate W receives in the spraying process is relatively large. For example, the mass of the first liquid L1 that the substrate W receives in the spraying process is relatively large. Therefore, particles on the substrate W are suitably removed in the spraying process. Therefore, the amount of particles on the substrate W is suitably reduced. As a result, the cleanliness of the substrate W is suitably improved. The processing quality of the substrate W is suitably improved.

[0088] In the water-repellent treatment step, particles derived from the water-repellent agent H may be generated on the substrate W. Even in this case, in the spraying step, the first liquid L1 also suitably removes the particles derived from the water-repellent agent H on the substrate W.

[0089] As described above, the substrate processing method can suitably reduce particles on the substrate W.

[0090] In the spraying step, at least one of droplets of the first liquid L1 and a mist of the first liquid L1 is sprayed. Therefore, in the spraying step, the first liquid L1 is efficiently supplied to the substrate W. For example, the first liquid L1 can be applied to the entire substrate W while suppressing the amount of first liquid L1 consumed.

[0091] In the spraying step, the first liquid L1 is sprayed by a shower head nozzle. Therefore, in the spraying step, the first liquid L1 is efficiently supplied to the substrate W. For example, the first liquid L1 can be applied to the entire surface of the substrate W while suppressing the amount of first liquid L1 consumed.

[0092] The substrate processing method includes a first immersion step. The first immersion step is performed before the first gas processing step. In the first immersion step, the substrate W is immersed in a second liquid L2 stored in a processing tank 11. The processing tank 11 is installed in a chamber 3. After the first immersion step, a first gas processing step, a water-repellent processing step, and a spraying step are performed. During the first gas processing step, the water-repellent processing step, and the spraying step, the interior of the chamber 3 is in a reduced pressure state D. Therefore, after the first immersion step, the interior of the chamber 3 is in a reduced pressure state D until the spraying step. When the interior of the chamber 3 is in a reduced pressure state D, it is difficult to discharge the second liquid L2 outside the chamber. Therefore, when the interior of the chamber 3 is in a reduced pressure state D, it is difficult to replace the second liquid L2 with the first liquid L1 in the processing tank 11. Therefore, after the first immersion step, until the spraying step, it is difficult to use the processing tank 11 to supply the first liquid L1 to the substrate W. In the spraying step, the first liquid L1 is sprayed onto the substrate W without using the processing tank 11. Therefore, the first immersion step does not limit the execution of the spraying step. Even when the substrate processing method includes the first immersion step, it is easy to execute the spraying step. In fact, when the substrate processing method includes the first immersion step, the spraying step is significantly useful.

[0093] In the first gas treatment step, the water-repellent treatment step, and the spraying step, the substrate W is positioned above the treatment tank 11. Specifically, in the first gas treatment step, the water-repellent treatment step, and the spraying step, the substrate W is positioned at the first position P1. Therefore, in the first gas treatment step, the substrate W is preferably exposed to the first gas G1. In the water-repellent treatment step, the substrate W is preferably exposed to the water-repellent agent H. In the spraying step, the substrate W is preferably exposed to the first liquid L1.

[0094] The substrate processing apparatus 1 includes a chamber 3, supply units 31, 41, and 51, a decompression unit 81, and a control unit 101. The chamber 3 accommodates a plurality of substrates W. The supply unit 31 supplies a water repellent agent H to the substrates W in the chamber 3. The supply unit 41 supplies a first gas G1 to the substrates W in the chamber 3. The supply unit 51 supplies a first liquid L1 to the substrates W in the chamber 3. The decompression unit 81 reduces the pressure inside the chamber 3. The control unit 101 controls the supply units 31, 41, and 51 and the decompression unit 81 to perform a first gas process, a water repellent process, and a spray process. In the first gas process, the decompression unit 81 reduces the pressure inside the chamber 3, and the supply unit 41 supplies the first gas G1 to the substrates W. In the water repellent process, the decompression unit 81 reduces the pressure inside the chamber 3, and the supply unit 31 supplies the water repellent agent H to the substrates W. In the spraying process, the decompression unit 81 depressurizes the interior of the chamber 3, and the supply unit 51 sprays the first liquid L1 onto the substrate W. Even when the decompression unit 81 depressurizes the interior of the chamber 3, the supply unit 51 can suitably spray the first liquid L1 onto the substrate W. In the spraying process, the first liquid L1 suitably removes particles on the substrate W. Therefore, the amount of particles on the substrate W is suitably reduced. As a result, the cleanliness of the substrate W is suitably improved. The processing quality of the substrate W is suitably improved.

[0095] In the water-repellent treatment, particles derived from the water-repellent agent H may be generated on the substrate W. Even in this case, in the spraying treatment, the first liquid L1 also suitably removes the particles derived from the water-repellent agent H on the substrate W.

[0096] As described above, the substrate processing apparatus 1 can effectively reduce particles on the substrate W.

[0097] 2. Second Embodiment The second embodiment will be described with reference to the drawings. Note that the same components as those in the first embodiment are designated by the same reference numerals and detailed description thereof will be omitted.

[0098] <2-1. Overview of substrate processing equipment> 5 is a front view showing the inside of a substrate processing apparatus 1 according to the second embodiment. The supply unit 51 supplies two types of first liquid L1. Hereinafter, one type of first liquid L1 will be referred to as a "diluted first liquid L1a." The other type of first liquid will be referred to as an "undiluted first liquid L1b."

[0099] The diluted first liquid L1a is a diluted organic solvent. The diluted first liquid L1a is an organic solvent diluted with pure water. The diluted first liquid L1a is a mixed liquid of pure water and an organic solvent. The organic solvent of the diluted first liquid L1a is, for example, isopropyl alcohol (IPA).

[0100] The undiluted first liquid L1b is an undiluted organic solvent. The undiluted first liquid L1b consists essentially of only an organic solvent liquid. The undiluted first liquid L1b is an undiluted solution of an organic solvent. The undiluted first liquid L1b does not substantially contain water. The organic solvent of the undiluted first liquid L1b is, for example, isopropyl alcohol (IPA).

[0101] The structure of the supply unit 51 is illustrated. The supply unit 51 includes discharge units 52a and 52b. The discharge units 52a and 52b are each disposed in the chamber 3. The discharge units 52a and 52b are each disposed at a position higher than the processing bath 11. The discharge unit 52a is disposed on both sides of the substrate W positioned at the first position P1 in the direction Y. The discharge unit 52a has a structure similar to that of the discharge unit 52 in the first embodiment. The discharge unit 52a sprays the diluted first liquid L1a into the chamber 3. Similarly, the discharge unit 52b is disposed on both sides of the substrate W positioned at the first position P1 in the direction Y. The discharge unit 52b sprays the undiluted first liquid L1b into the chamber 3. The discharge unit 52b has a structure similar to that of the discharge unit 52 in the first embodiment.

[0102] The supply unit 51 includes a pipe 53a and a valve 54a. The pipe 53a is connected to a discharge portion 52a. The pipe 53a is further connected to a supply source 55a. The supply source 55a stores the diluted first liquid L1a. The valve 54a is provided on the pipe 53a. The valve 54a controls the spraying of the diluted first liquid L1a by the discharge portion 52a. Similarly, the supply unit 51 includes a pipe 53b and a valve 54b. The pipe 53b is connected to the discharge portion 52b. The pipe 53b is further connected to a supply source 55b. The supply source 55b stores the undiluted first liquid L1b. The valve 54b is provided on the pipe 53b. The valve 54b controls the spraying of the undiluted first liquid L1b by the discharge portion 52b.

[0103] The supply unit 61 supplies a third liquid L3 to the processing tank 11 in addition to the second liquid L2. The third liquid L3 is a diluted organic solvent. The third liquid L3 is, for example, an organic solvent diluted with pure water. The third liquid L3 is, for example, a mixed liquid of pure water and an organic solvent.

[0104] The structure of the supply unit 61 is illustrated. The supply unit 61 includes a pipe 67 and a valve 68. The pipe 67 is connected to a discharge portion 62. The pipe 67 is further connected to a supply source 69. The supply source 69 stores the third liquid L3. The valve 68 is provided on the pipe 67. The valve 68 controls the discharge of the third liquid L3 by the discharge portion 62.

[0105] The substrate processing apparatus 1 includes a supply unit 71. The supply unit 71 supplies a mixed gas to the chamber 3. When the substrate W is located at a position P1, the supply unit 71 supplies the mixed gas to the substrate W.

[0106] The mixed gas will be described. The mixed gas contains an organic solvent and an inert gas. The mixed gas is a mixture of an organic solvent and an inert gas. The mixed gas contains at least one of an organic solvent gas and an organic solvent liquid. That is, the organic solvent in the mixed gas is at least one of a gas phase and a liquid phase. The organic solvent gas in the mixed gas is, for example, organic solvent vapor. The organic solvent liquid in the mixed gas is, for example, at least one of organic solvent droplets and organic solvent mist. The organic solvent in the mixed gas is, for example, isopropyl alcohol (IPA). The inert gas in the mixed gas is, for example, nitrogen gas.

[0107] The structure of the supply unit 71 is illustrated. The supply unit 71 has a discharge unit 72. The discharge unit 72 is installed in the chamber 3. The discharge unit 72 is positioned higher than the processing tank 11. The discharge units 72 are positioned on both sides of the substrate W positioned at the first position P1 in the direction Y. The discharge units 72 discharge the mixed gas into the chamber 3. The discharge unit 72 includes a plurality of (e.g., 20) two-fluid nozzles. The plurality of two-fluid nozzles are arranged in two rows in the direction X. Each two-fluid nozzle mixes an organic solvent and an inert gas to generate a mixed gas. For example, each two-fluid nozzle generates at least one of droplets and a mist of the organic solvent. Each two-fluid nozzle has one outlet (not shown). Each two-fluid nozzle discharges the mixed gas from the outlet. Each two-fluid nozzle sprays both the organic solvent and the inert gas from the outlet. Each two-fluid nozzle sprays at least one of droplets of an organic solvent and a mist of an organic solvent together with an inert gas.

[0108] Supply unit 71 includes pipes 73 and 77 and valves 74 and 78. Pipes 73 and 77 are each connected to discharge portion 72. Pipe 73 is further connected to supply source 75. Supply source 75 stores an organic solvent. Valve 74 is provided on pipe 73. Valve 74 controls the supply of the organic solvent to discharge portion 72. Pipe 77 is further connected to supply source 79. Supply source 79 stores an inert gas. Valve 78 is provided on pipe 77. Valve 78 controls the supply of the inert gas to discharge portion 72. When valves 74 and 78 are open simultaneously, discharge portion 72 discharges the mixed gas.

[0109] The substrate processing apparatus 1 includes a pressure sensor 89. The pressure sensor 89 is installed in the chamber 3. The pressure sensor 89 detects the pressure of the gas in the chamber 3.

[0110] The processing tank 11 has an opening 12a and a discharge port 12b. The opening 12a is located at the top of the processing tank 11. The opening 12a is sufficiently large. When the substrate W moves between the first position P1 and the second position P2, the substrate W passes through the opening 12a. The discharge port 12b is located at the bottom of the processing tank 11.

[0111] The substrate processing apparatus 1 includes a dump unit 91. The dump unit 91 discharges the processing liquid in the processing tank 11. The chamber 3 receives the processing liquid discharged from the processing tank 11. The processing liquid discharged from the processing tank 11 accumulates at the bottom of the chamber 3. The dump unit 91 includes a dump valve 92. The dump valve 92 is installed inside the chamber 3. The dump valve 92 is attached to the bottom of the processing tank 11. The dump valve 92 is connected to the discharge port 12b. When the dump valve 92 opens, the dump unit 91 allows the processing liquid to flow from the inside of the processing tank 11 to the outside of the processing tank 11 through the dump valve 92. When the dump valve 92 closes, the dump unit 91 allows the processing liquid to be stored in the processing tank 11.

[0112] The substrate processing apparatus 1 includes a drainage unit 95. The drainage unit 95 discharges the processing liquid in the chamber 3 to the outside of the chamber 3. The drainage unit 95 includes a pipe 96 and a drain valve 97. The pipe 96 is provided outside the chamber 3. The pipe 96 is connected to the chamber 3. The pipe 96 has a first end and a second end. The first end of the pipe 96 is connected to the chamber 3. The first end of the pipe 96 is connected to the bottom of the chamber 3. The pipe 96 extends downward from the chamber 3. The second end of the pipe 96 is open to the atmosphere outside the chamber 3. The drain valve 97 is provided on the pipe 96. The drain valve 97 opens and closes the pipe 96. When the drain valve 97 is opened, the pipe 96 is opened to the outside of the chamber 3. When the drain valve 97 is opened, the inside of the chamber 3 is opened to the outside of the chamber 3 through the pipe 96. When the drain valve 97 opens, the drainage unit 95 allows the processing liquid in the chamber 3 to flow out of the chamber 3 through the pipe 96. When the drain valve 97 closes, the drainage unit 95 allows the inside of the chamber 3 to be in a reduced pressure state D.

[0113] The pipe 96 is an example of a drain pipe in the present invention.

[0114] Although not shown, the control unit 101 controls the valve 68. The control unit 101 controls the supply unit 71. The control unit 101 controls the valves 74 and 78. The control unit 101 acquires the detection result of the pressure sensor 89. The control unit 101 controls the dump unit 91 and the drainage unit 95. The control unit 101 controls the dump valve 92 and the drain valve 97.

[0115] <2-2. Operation example of substrate processing equipment> 6 and 7 are flowcharts showing the steps of the substrate processing method of the second embodiment. The substrate processing method includes steps S11 to S29. Steps S11 to S17 are performed in this order. Steps S18 to S20 are performed after step S17 and before step S21. Steps S21 to S29 are performed in this order.

[0116] 8(a)-8(e), 9(a)-9(e), 10(a)-10(e), and 11(a)-11(c) are schematic diagrams illustrating the substrate processing apparatus 1 in steps S11-S21 and S23-S29, respectively. 8(a)-8(e), etc. each show a simplified view of the substrate processing apparatus 1.

[0117] Step S11: First supply process Referring to Figure 8(a), the substrate W is located at the first position P1. The interior of the chamber 3 is at atmospheric pressure J. The supply unit 61 supplies the second liquid L2 to the processing tank 11. The dump valve 92 is closed. The processing tank 11 stores the second liquid L2. Thereafter, the supply unit 61 stops supplying the second liquid L2.

[0118] Step S12: First immersion step 8(b), the interior of the chamber 3 is under atmospheric pressure J. The lifting mechanism 15 moves the substrate W from the first position P1 to the second position P2. The substrate W is immersed in the second liquid L2 in the processing bath 11.

[0119] Step S13: Atmosphere formation process Referring to Figure 8(c), the substrate W is located at the second position P2 and is immersed in the second liquid L2 in the processing bath 11. The supply unit 21 supplies the inert gas N into the chamber 3. The decompression unit 81 starts operating. The drain valve 97 is closed. The interior of the chamber 3 changes from the atmospheric pressure state J to the decompressed state D. An atmosphere of the inert gas N is formed in the chamber 3.

[0120] Step S14: Atmosphere formation process Referring to FIG. 8(d), the substrate W is located at the second position P2 and immersed in the second liquid L2 in the processing tank 11. The decompression unit 81 is in operation. The interior of the chamber 3 is maintained in a decompressed state D. The supply unit 21 stops supplying the inert gas N. The supply unit 41 supplies the first gas G1 into the chamber 3. An atmosphere of the first gas G1 is formed in the chamber 3.

[0121] Step S15: First Gas Treatment Step (First Gas Treatment) See FIG. 8(e). The decompression unit 81 is in operation. The interior of the chamber 3 is maintained in a decompressed state D. The supply unit 41 supplies a first gas G1 into the chamber 3. The lifting mechanism 15 moves the substrate W from the second position P2 to the first position P1. The substrate W is lifted up from the second liquid L2 in the processing bath 11. The substrate W is exposed to the first gas G1. The organic solvent gas contained in the first gas G1 changes into organic solvent liquid on the surface of the substrate W. The organic solvent derived from the first gas G1 removes the second liquid L2 on the substrate W. The organic solvent liquid derived from the first gas G1 covers the surface of the substrate W.

[0122] Step S16: Dumping process Referring to FIG. 9(a), the substrate W is located at a first position P1. The supply unit 41 supplies a first gas G1 to the substrate W in the chamber 3. The decompression unit 81 is in operation. The interior of the chamber 3 is maintained in a decompressed state D. The dump valve 92 is open. The dump unit 91 releases the second liquid L2 from the processing tank 11. The drain valve 97 is closed. The second liquid L2 accumulates at the bottom of the chamber 3.

[0123] Step S17: Water-repellent treatment process (water-repellent treatment) 9(b), the substrate W is located at the first position P1. The decompression unit 81 is in operation. The interior of the chamber 3 is maintained in a decompressed state D. The supply unit 41 stops the supply of the first gas G1. The supply unit 31 supplies the water repellent agent H to the substrate W in the chamber 3. The water repellent agent H adheres to the substrate W. On the substrate W, the organic solvent derived from the first gas G1 is replaced by the water repellent agent H. The water repellent agent H covers the surface of the substrate W. The water repellent agent H makes the substrate W water repellent. A portion of the water repellent agent H on the substrate W is converted into a water repellent film. Another portion of the water repellent agent H on the substrate W becomes unreacted water repellent agent H. Furthermore, another portion of the water repellent agent H on the substrate W may be converted into particles.

[0124] Thereafter, the supply unit 31 stops supplying the water repellent agent H.

[0125] Step S18: Second gas treatment step 9(c). The substrate W is located at the first position P1. The decompression unit 81 is in operation. The interior of the chamber 3 is maintained at a decompressed state D. The supply unit 41 supplies a processing gas to the substrate W in the chamber 3. In this specification, the processing gas supplied to the chamber 3 in the second gas processing step is appropriately referred to as the "second gas G2." The organic solvent gas contained in the second gas G2 changes into a liquid organic solvent on the surface of the substrate W. The organic solvent derived from the second gas G2 removes unreacted water repellent agent H on the substrate W. The organic solvent derived from the second gas G2 also removes particles derived from the water repellent agent H on the substrate W. The liquid organic solvent derived from the second gas G2 covers the surface of the substrate W. Then, the supply unit 41 stops supplying the second gas G2.

[0126] Step S19: First spraying process (spraying process) 9(d), the substrate W is located at the first position P1. The decompression unit 81 is in operation. The interior of the chamber 3 is maintained in a decompressed state D. The supply unit 51 sprays the diluted first liquid L1a onto the substrate W in the chamber 3. The diluted first liquid L1a adheres to the substrate W. The diluted first liquid L1a removes any unreacted water repellent agent H on the substrate W. The diluted first liquid L1a also removes particles derived from the water repellent agent H on the substrate W. The diluted first liquid L1a covers the surface of the substrate W.

[0127] In the first spraying step, the lifting mechanism 15 may keep the substrate W stationary at the first position P1. Alternatively, in the first spraying step, the lifting mechanism 15 may move the substrate W up and down. For example, the lifting mechanism 15 may move the substrate W up and down near the first position P1. For example, the lifting mechanism 15 may move the substrate W up and down in the vertical direction Z. Alternatively, the lifting mechanism 15 may further include a mechanism (not shown) that oscillates the substrate W. The lifting mechanism 15 may oscillate the substrate W using this mechanism. When the substrate W moves up and down or oscillates, the entire substrate W is preferably exposed to the diluted first liquid L1a. When the substrate W moves up and down or oscillates, the diluted first liquid L1a is more uniformly adhered to the entire surface of the substrate W.

[0128] Thereafter, the supply unit 51 stops spraying the diluted first liquid L1a.

[0129] Step S20: Second spraying process (spraying process) 9(e). The substrate W is located at the first position P1. The decompression unit 81 is in operation. The interior of the chamber 3 is maintained in a decompressed state D. The supply unit 51 sprays the undiluted first liquid L1b onto the substrate W in the chamber 3. The undiluted first liquid L1b adheres to the substrate W. The undiluted first liquid L1b removes any unreacted water repellent agent H on the substrate W. The undiluted first liquid L1b also removes particles derived from the water repellent agent H on the substrate W. The undiluted first liquid L1b covers the surface of the substrate W.

[0130] In the second spraying step, the lifting mechanism 15 may keep the substrate W stationary at the first position P1. Alternatively, in the second spraying step, the lifting mechanism 15 may move the substrate W up and down. For example, the lifting mechanism 15 may move the substrate W up and down near the first position P1. For example, the lifting mechanism 15 may move the substrate W up and down in the vertical direction Z. Alternatively, the lifting mechanism 15 may further include a mechanism (not shown) that oscillates the substrate W. The lifting mechanism 15 may oscillate the substrate W using this mechanism. When the substrate W moves up and down or oscillates, the entire substrate W is preferably exposed to the undiluted first liquid L1b. When the substrate W moves up and down or oscillates, the undiluted first liquid L1b is more uniformly adhered to the entire surface of the substrate W.

[0131] Thereafter, the supply unit 51 stops spraying the undiluted first liquid L1b.

[0132] Here, the second processing gas step, the first sparging step, and the second sparging step may be performed in any order. For example, the first sparging step may be performed before the second processing gas step. For example, the first sparging step may be performed after the second processing gas step. For example, the first sparging step may be performed simultaneously with the second processing gas step. Similarly, for example, the second sparging step may be performed at least either before or after the first sparging step. For example, the second sparging step may be performed simultaneously with the first sparging step. For example, the second processing gas step may be performed at least either before or after the second sparging step. For example, the second processing gas step may be performed simultaneously with the second sparging step.

[0133] Here, the first spraying process and the second spraying process are collectively referred to as the spraying process. The amount of diluted first liquid L1a supplied by the supply unit 51 in the first spraying process is referred to as amount M1a. The amount of undiluted first liquid L1b supplied by the supply unit 51 in the second spraying process is referred to as amount M1b. The sum of amount M1a and amount M1b is referred to as amount M1. Amount M1 corresponds to the amount of first liquid L1 supplied by the supply unit 51 in the spraying process. The amount of second gas G2 supplied by the supply unit 41 in the second gas treatment process is referred to as amount M2. Amount M1 is greater than amount M2. Amount M1 is, for example, twice or more the amount M2. Amount M1a is, for example, greater than amount M2. Amount M1a is, for example, greater than amount M2. Amount M1a is, for example, twice or more the amount M2. Amount M1b is, for example, greater than amount M2. The amount M1b is, for example, twice or more the amount M2.

[0134] The quantities M1, M1a, M1b, and M2 are, for example, masses. The quantities M1, M1a, M1b, and M2 are, for example, volumes. When the quantities M1, M1a, M1b, and M2 are volumes, the quantity M2 is a value converted into a liquid. For example, the quantity M2 is the volume of the liquid obtained by condensing the second gas G2. For example, the quantity M2 is the volume of the liquid used to generate the second gas G2.

[0135] The time during which the first spraying process is performed is referred to as time T1a. The time during which the second spraying process is performed is referred to as time T1b. The sum of time T1a and time T1b is referred to as time T1. Time T1 corresponds to the time during which the spraying process is performed. The time during which the second gas treatment process is performed is referred to as time T2. Time T1 is longer than time T2. Time T1a is, for example, longer than time T2. Time T1b is, for example, longer than time T2.

[0136] The amount M1 per unit time is called the flow rate R1. The amount M1a per unit time is called the flow rate R1a. The amount M1b per unit time is called the flow rate R1b. The amount M2 per unit time is called the flow rate R2. The flow rate R1 is, for example, the value obtained by dividing the amount M1 by the time T1. The flow rate R1a is, for example, the value obtained by dividing the amount M1a by the time T1a. The flow rate R1b is, for example, the value obtained by dividing the amount M1b by the time T1b. The flow rate R2 is, for example, the value obtained by dividing the amount M2 by the time T2. The flow rate R1 is greater than the flow rate R2. The flow rate R1a is, for example, greater than the flow rate R2. The flow rate R1a is, for example, greater than the flow rate R2. The flow rate R1a is, for example, greater than the flow rate R2. The flow rate R1b is, for example, greater than the flow rate R2. The flow rate R1b is, for example, greater than the flow rate R2.

[0137] Step S21: First pressurization step 10(a). The substrate W is located at the first position P1. The decompression unit 81 stops operating. The supply unit 71 supplies the mixed gas K to the substrate W in the chamber 3. This causes the interior of the chamber 3 to be pressurized from the decompressed state D to the atmospheric pressure state J. Specifically, the inert gas in the mixed gas K quickly pressurizes the interior of the chamber 3 from the decompressed state D to the atmospheric pressure state J. In other words, the inert gas in the mixed gas K quickly increases the gas pressure in the chamber 3. This is because the inert gas is difficult to condense.

[0138] The organic solvent in the mixed gas K wets the substrate W. For example, when the mixed gas K contains a gaseous organic solvent, the gaseous organic solvent contained in the mixed gas K condenses on the surface of the substrate W and turns into a liquid organic solvent on the surface of the substrate W. For example, when the mixed gas K contains a liquid organic solvent, the liquid organic solvent contained in the mixed gas K adheres to the surface of the substrate W. Therefore, the inside of the chamber 3 becomes a normal pressure state J without drying the substrate W.

[0139] In the first pressurizing step, the lifting mechanism 15 may keep the substrate W stationary at the first position P1. Alternatively, in the first pressurizing step, the lifting mechanism 15 may move the substrate W up and down. For example, the lifting mechanism 15 may move the substrate W up and down near the first position P1. For example, the lifting mechanism 15 may move the substrate W up and down in the vertical direction Z. Alternatively, the lifting mechanism 15 may further include a mechanism (not shown) that oscillates the substrate W. The lifting mechanism 15 may oscillate the substrate W using this mechanism. When the substrate W moves up and down or oscillates, the entire substrate W is preferably exposed to the mixed gas K. When the substrate W moves up and down or oscillates, the organic solvent in the mixed gas K adheres more uniformly to the entire surface of the substrate W.

[0140] Step S22: Judgment step The control unit 101 determines whether the inside of the chamber 3 has reached the normal pressure state J based on the detection result of the pressure sensor 89. For example, the control unit 101 acquires a measurement value of the gas pressure in the chamber 3 based on the detection result of the pressure sensor 89. The control unit 101 compares the measurement value with a reference value. The reference value is set in advance before the substrate processing method is performed. The reference value is included in the processing information held by the control unit 101. If the measurement value is less than the reference value, the control unit 101 does not determine that the inside of the chamber 3 has reached the normal pressure state J. If the measurement value is equal to or greater than the reference value, the control unit 101 determines that the inside of the chamber 3 has reached the normal pressure state J. If the control unit 101 does not determine that the inside of the chamber 3 has reached the normal pressure state J, the process returns to step S21 and continues the first pressurization step. If the control unit 101 determines that the inside of the chamber 3 has reached the normal pressure state J, the process ends the first pressurization step and proceeds to step S23.

[0141] Step S23: First drainage process 10(b). The substrate W is located at a first position P1. The supply unit 71 supplies the mixed gas K to the substrate W in the chamber 3. The decompression unit 81 is stopped. The interior of the chamber 3 is maintained at normal pressure J. The atmosphere in the chamber 3 contains an organic solvent derived from the mixed gas K. The drainage unit 95 discharges the second liquid L2 in the chamber 3 to the outside of the chamber 3. Specifically, the drain valve 97 opens the pipe 96 to the atmosphere outside the chamber 3. The second liquid L2 accumulated in the chamber 3 is discharged to the outside of the chamber 3 through the pipe 96. The second liquid L2 flows from the inside of the chamber 3 to the outside of the chamber 3 through the pipe 96.

[0142] Step S24: Second Supply Process 10(c). The substrate W is located at the first position P1. The supply unit 71 supplies the mixed gas K to the substrate W in the chamber 3. The decompression unit 81 is stopped. The interior of the chamber 3 is maintained at normal pressure J. The atmosphere in the chamber 3 contains the organic solvent derived from the mixed gas K. The dump valve 92 is closed. The supply unit 61 supplies the third liquid L3 to the processing tank 11. The processing tank 11 stores the third liquid L3.

[0143] Step S25: Second immersion step 10(d). The supply unit 71 supplies the mixed gas K to the substrate W in the chamber 3. The decompression unit 81 is stopped. The interior of the chamber 3 is maintained at normal pressure J. The atmosphere in the chamber 3 contains an organic solvent derived from the mixed gas K. The lifting mechanism 15 moves the substrate W from the first position P1 to the second position P2. The substrate W is immersed in the third liquid L3 in the processing bath 11. The third liquid L3 cleans the substrate W. For example, the third liquid L3 removes unreacted water repellent agent H on the substrate W. For example, the third liquid L3 also removes particles derived from the water repellent agent H on the substrate W.

[0144] The drainage unit 95 drains the third liquid L3 in the chamber 3 to the outside of the chamber 3. The drainage unit 95 drains the third liquid L3 that has overflowed from the processing tank 11 to the outside of the chamber 3. Specifically, the supply unit 61 continues to supply the third liquid L3 to the processing tank 11. The dump valve 92 is closed. The third liquid L3 overflows from the opening 12a of the processing tank 11. When the third liquid L3 overflows from the processing tank 11, the water repellent agent removed from the substrate W also overflows from the processing tank 11. When the third liquid L3 overflows from the processing tank 11, particles derived from the water repellent agent H removed from the substrate W also overflow from the processing tank 11. The third liquid L3 that overflows from the processing tank 11 accumulates at the bottom of the chamber 3. The drain valve 97 is open. The piping 96 is open to the atmosphere outside the chamber 3. The third liquid L3 that has accumulated at the bottom of the chamber 3 flows out of the chamber 3 through the pipe 96.

[0145] Step S26: Atmosphere formation process Refer to FIG. 10(e). The substrate W is located at the second position P2 and is immersed in the third liquid L3 in the processing tank 11. The supply unit 61 stops supplying the third liquid L3. The drain valve 97 closes. The supply unit 71 stops supplying the mixed gas K. The supply unit 41 supplies the processing gas into the chamber 3. In this specification, the processing gas supplied to the chamber 3 after the second immersion step is appropriately referred to as the "third gas G3." The decompression unit 81 starts operating. The interior of the chamber 3 changes from the normal pressure state J to a decompressed state D. An atmosphere of the third gas G3 is formed in the chamber 3.

[0146] Step S27: Third gas treatment step Referring to FIG. 11(a), the decompression unit 81 is in operation. The interior of the chamber 3 is maintained in a decompressed state D. The supply unit 41 supplies a third gas G3 into the chamber 3. The lifting mechanism 15 moves the substrate W from the second position P2 to the first position P1. The substrate W is lifted up from the third liquid L3 in the processing bath 11. The supply unit 41 supplies the third gas G3 to the substrate W. The organic solvent gas contained in the third gas G3 changes into a liquid organic solvent on the surface of the substrate W. The organic solvent derived from the third gas G3 removes the third liquid L3 on the substrate W. The liquid organic solvent derived from the third gas G3 covers the surface of the substrate W.

[0147] Step S28: Drying process 11(b). The substrate W is located at the first position P1. The decompression unit 81 is in operation. The interior of the chamber 3 is maintained in a decompressed state D. The supply unit 41 stops supplying the third gas G3. The supply unit 21 supplies the inert gas N to the substrate W. The inert gas N removes the organic solvent on the substrate W. The substrate W is dried.

[0148] Step S29: Second pressurization step 11(c), the substrate W is located at the first position P1. The supply unit 21 supplies the inert gas N. The decompression unit 81 stops operating. The interior of the chamber 3 is pressurized from the decompressed state D to the normal pressure state J.

[0149] <2-3. Effects of the Second Embodiment> The second embodiment provides the same effects as the first embodiment. For example, the substrate processing method of the second embodiment also makes it possible to suitably reduce particles on the substrate W. Furthermore, the second embodiment provides the following effects.

[0150] The spraying step includes a first spraying step and a second spraying step. In the first spraying step, the first liquid L1 is a diluted first liquid L1a. In the first spraying step, the diluted first liquid L1a is sprayed as the first liquid L1. Therefore, the amount of organic solvent used in the first spraying step is suitably reduced. In the second spraying step, the first liquid L1 is an undiluted first liquid L1b. In the second spraying step, the undiluted first liquid L1b is sprayed as the first liquid L1. The undiluted first liquid L1b does not substantially contain water. Therefore, the surface tension of the undiluted first liquid L1b is low. Therefore, in the second spraying step, the undiluted first liquid L1b does not exert a significant force on the substrate W. As a result, the substrate W is suitably protected in the second spraying step. In the second spraying step, the pattern formed on the surface of the substrate W is suitably protected.

[0151] The substrate processing method includes a second gas processing step. The second gas processing step is performed after the water-repellent processing step. In the second gas processing step, the interior of the chamber 3 is in a reduced pressure state D, and a second gas G2 is supplied to the substrate W in the chamber 3. The second gas G2 contains an organic solvent gas. In the second gas processing step, the entire substrate W is exposed to the second gas G2. Therefore, in the second gas processing step, the organic solvent derived from the second gas G2 quickly adheres to the entire substrate W. In the second gas processing step, the organic solvent derived from the second gas G2 adheres uniformly to the entire substrate W. Therefore, in the second gas processing step, the uniformity of the cleanliness of the substrate W is improved throughout the entire substrate W.

[0152] The amount M1 of the first liquid L1 supplied in the spraying step is greater than the amount M2 of the second gas G2 supplied in the second gas processing step. Therefore, in the spraying step, the first liquid L1 more effectively removes particles on the substrate W.

[0153] The time T1 during which the spraying step is performed is longer than the time T2 during which the second gas processing step is performed. Therefore, in the spraying step, particles on the substrate W are more effectively removed.

[0154] The flow rate R1 of the first liquid L1 in the spraying step is greater than the flow rate R2 of the second gas G2 in the second gas processing step. Therefore, the first liquid L1 removes particles on the substrate W more effectively in the spraying step.

[0155] The substrate processing method includes a first pressurizing step and a first liquid draining step. The first pressurizing step is performed after the spraying step. In the first pressurizing step, the inside of the chamber 3 is pressurized from a reduced pressure state D to an atmospheric pressure state J. The first liquid draining step is performed after the first pressurizing step. In the first liquid draining step, the inside of the chamber 3 is maintained at an atmospheric pressure state J, and the second liquid L2 is drained to the outside of the chamber 3. When the inside of the chamber 3 is in the atmospheric pressure state J, the pressure of the gas inside the chamber 3 is close to the pressure of the gas outside the chamber 3. Therefore, in the first liquid draining step, it is easy to drain the second liquid L2 inside the chamber 3 to the outside of the chamber 3.

[0156] In the first drainage step, the pipe 96 is opened to the atmosphere outside the chamber 3. The pipe 96 is connected in communication with the chamber 3. As described above, in the first drainage step, the interior of the chamber 3 is at normal pressure J. Therefore, in the first drainage step, the second liquid L2 flows from the interior of the chamber 3 to the exterior of the chamber 3 through the pipe 96 due to its own weight. In the first drainage step, the second liquid L2 naturally flows from the interior of the chamber 3 to the exterior of the chamber 3 through the pipe 96. In the first drainage step, it is not necessary to forcibly send the second liquid L2 from the interior of the chamber 3 to the exterior of the chamber 3. Therefore, in the first drainage step, it is easy to discharge the second liquid L2 from the interior of the chamber 3 to the exterior of the chamber 3 through the pipe 96.

[0157] In the first pressurizing step, a mixed gas K is supplied to the substrate W in the chamber 3. The mixed gas K contains an organic solvent and an inert gas. Therefore, in the first pressurizing step, the inside of the chamber 3 is quickly pressurized from the reduced pressure state D to the normal pressure state J without drying the substrate W in the chamber 3.

[0158] The mixed gas K contains at least one of a gaseous organic solvent and a liquid organic solvent. Therefore, the organic solvent contained in the mixed gas K effectively wets the substrate W. Therefore, the mixed gas K effectively prevents the substrate from drying out.

[0159] The substrate processing method includes a second immersion step. The second immersion step is performed after the first drainage step. In the second immersion step, the substrate W is immersed in the third liquid L3 stored in the processing tank 11. Therefore, in the second immersion step, the substrate W receives a large amount of the third liquid L3. In the second immersion step, the third liquid L3 more effectively removes particles on the substrate W. Therefore, the particles on the substrate W are more effectively reduced. As a result, the cleanliness of the substrate W is more effectively improved. The processing quality of the substrate W is more effectively improved.

[0160] The atmosphere in the chamber 3 contains an organic solvent from the first pressurizing step until the substrate W is immersed in the third liquid L3. Therefore, the organic solvent contained in the atmosphere in the chamber 3 wets the substrate W from the first pressurizing step until the substrate W is immersed in the third liquid L3. Therefore, the substrate W is not dried after the spraying step and before the second immersion step. Therefore, in the second immersion step, the substrate W is processed with appropriate quality.

[0161] The third liquid L3 is a diluted organic solvent, and therefore, the third liquid L3 removes particles on the substrate W appropriately.

[0162] The present invention is not limited to the first and second embodiments, and can be modified as follows.

[0163] (1) In the first and second embodiments, the discharge unit 52 includes a shower head nozzle. However, this is not limited to this. For example, the discharge unit 52 may include a two-fluid nozzle. For example, the discharge unit 52 may include at least one of a shower head nozzle and a two-fluid nozzle. The two-fluid nozzle of the discharge unit 52 has, for example, substantially the same structure as the two-fluid nozzle of the discharge unit 72. The two-fluid nozzle of the discharge unit 52 sprays, for example, at least one of droplets of the first liquid L1 and a mist of the first liquid L1 together with an inert gas. Therefore, the two-fluid nozzle of the discharge unit 52 preferably sprays the first liquid L1.

[0164] (2) In the second embodiment, the spraying process includes a first spraying process and a second spraying process. However, this is not limited to this. For example, the spraying process may omit either the first spraying process or the second spraying process. For example, the spraying process may include at least either the first spraying process or the second spraying process.

[0165] (3) In the second embodiment, the pipe 96 of the drainage unit 95 is connected to the chamber 3. However, this is not limited to this. For example, the pipe 96 may be connected to the treatment tank 11. Specifically, a first end of the pipe 96 may be connected to the treatment tank 11. In this modified embodiment, when the pipe 96 is opened to the atmosphere outside the chamber 3, the treatment liquid in the treatment tank 11 is discharged to the outside of the chamber 3 through the pipe 96.

[0166] (4) In the second embodiment, the third liquid L3 is a diluted organic solvent. However, this is not limiting. The third liquid L3 may be, for example, pure water (DIW). Even when the third liquid L3 is pure water, the third liquid L3 properly removes particles on the substrate W.

[0167] (5) In the first and second embodiments, the configurations of the supply units 21, 31, 41, 51, 61, and 71 are exemplified. However, the present invention is not limited to these. The configurations of the supply units 21, 31, 41, 51, 61, and 71 may be changed as appropriate.

[0168] In the first and second embodiments, the inert gas N, the water repellent agent H, the first gas G1, the first liquid L1, and the mixed gas K are discharged from different discharge portions 22, 32, 42, 52, and 72. However, this is not limited to this. At least two of the inert gas N, the water repellent agent H, the first gas G1, the first liquid L1, and the mixed gas K may be discharged from the same discharge portion.

[0169] The supply unit 61 supplied the generated third liquid L3 to the processing tank 11. However, this is not limited to this. The supply unit 61 may generate the third liquid L3 within the processing tank 11. For example, the supply unit 61 may supply the undiluted organic solvent and pure water to the processing tank 11 separately.

[0170] The discharge unit 72 (two-fluid nozzle) generated the mixed gas K. However, this is not limited to this. The discharge unit 72 does not have to generate the mixed gas K. For example, the discharge unit 72 may be connected in communication with a supply source that stores the mixed gas K. For example, the supply source that stores the mixed gas K may also generate the mixed gas K. For example, the supply source that stores the mixed gas K may generate the mixed gas K by mixing vapor of an organic solvent with an inert gas.

[0171] (6) In the first and second embodiments, the procedure of the substrate processing method is exemplified. However, the present invention is not limited to this. The procedure of the substrate processing method may be changed as appropriate.

[0172] For example, the substrate processing methods of the first and second embodiments include the first immersion step, but are not limited to this. The first immersion step may be omitted.

[0173] For example, in the second embodiment, the supply unit 71 supplied the mixed gas K to the chamber 3 from the first pressurizing step to the second immersion step. However, this is not limited to this. For example, the supply unit 71 may supply the mixed gas K into the chamber 3 from the first pressurizing step until the substrate W is immersed in the third liquid L3 in the processing tank 11. Then, after the substrate W is immersed in the third liquid L3 in the processing tank 11, the supply unit 71 may stop supplying the mixed gas K. According to this modified embodiment, the atmosphere in the chamber 3 preferably contains the organic solvent of the mixed gas K from the first pressurizing step to the second immersion step.

[0174] Alternatively, the supply unit 71 may stop supplying the mixed gas K after the first pressurizing step. For example, the supply unit 71 may stop supplying the mixed gas K during the first draining step, the second supplying step, and the second immersion step. During the first pressurizing step, the atmosphere of the mixed gas K is formed in the chamber 3. During the first draining step, the second supplying step, and the second immersion step, the pressure inside the chamber 3 is not reduced. Therefore, after the first pressurizing step, the atmosphere of the mixed gas K remains in the chamber 3 until the second immersion step. Therefore, according to this modified embodiment, the atmosphere in the chamber 3 preferably contains the organic solvent of the mixed gas K from the first pressurizing step to the second immersion step.

[0175] (7) The first to third embodiments and the modified embodiments described above in (1) to (6) may be further modified as appropriate by replacing or combining each configuration with the configuration of another modified embodiment. [Explanation of symbols]

[0176] 1... Substrate processing equipment 3...Chamber 11... Treatment tank 31 ... Supply unit (second supply unit) 41 ... Supply unit (first supply unit) 51 ... Supply unit (spraying unit) 52...Discharge part 81 ... Pressure reducing unit 89... Pressure sensor 95...Drainage unit 96...Piping (drainage pipe) 101 ... Control unit D: Depressurized state G1: First gas G2: Second gas H...water repellent J: Normal pressure K: mixed gas L1 … 1st liquid L1a: Diluted liquid 1 (diluted organic solvent) L1b: Undiluted first liquid (undiluted organic solvent) L2 … 2nd liquid L3 … 3rd liquid M1: Amount of the first liquid supplied during the spraying process M2: Amount of second gas supplied in the second gas treatment step P1 … 1st position P2 … 2nd position T1: Time during which the spraying process is carried out T2: Time during which the second gas treatment step is performed W: Substrate

Claims

1. A substrate processing method for simultaneously processing a plurality of substrates accommodated in one chamber, comprising: a first gas processing step of supplying a first gas containing an organic solvent gas to the substrate in the chamber while the pressure inside the chamber is reduced; a water-repellent treatment step of supplying a water-repellent agent to the substrate in the chamber while the pressure inside the chamber is reduced after the first gas treatment step; a spraying step of spraying a first liquid containing an organic solvent onto the substrate in the chamber while the pressure inside the chamber is reduced after the water-repellent treatment step; a second gas processing step of supplying a second gas containing an organic solvent gas to the substrate in the chamber while the pressure inside the chamber is reduced after the water-repellent processing step; A substrate processing method comprising:

2. In the substrate processing method according to claim 1, the amount of the first liquid supplied in the spraying step is greater than the amount of the second gas supplied in the second gas treatment step; Substrate processing method.

3. In the substrate processing method according to claim 1 or 2, The time for which the spraying step is performed is longer than the time for which the second gas treatment step is performed. Substrate processing method.

4. A substrate processing method for simultaneously processing a plurality of substrates accommodated in one chamber, comprising: a first immersion step of immersing the substrate in a second liquid stored in a treatment tank installed in the chamber; a first gas processing step of supplying a first gas containing an organic solvent gas to the substrate in the chamber while the pressure inside the chamber is reduced after the first immersion step; a water-repellent treatment step of supplying a water-repellent agent to the substrate in the chamber while the pressure inside the chamber is reduced after the first gas treatment step; a spraying step of spraying a first liquid containing an organic solvent onto the substrate in the chamber while the pressure inside the chamber is reduced after the water-repellent treatment step; Equipped with the substrate is positioned above the treatment tank during the first gas treatment step, the water-repellent treatment step, and the spraying step; Substrate processing method.

5. In the substrate processing method according to claim 4, a first pressurizing step of pressurizing the inside of the chamber from a reduced pressure state to an atmospheric pressure state after the spraying step; a first liquid draining step of maintaining the inside of the chamber at normal pressure after the first pressurizing step and draining the second liquid out of the chamber; Further provided with Substrate processing method.

6. In the substrate processing method according to claim 5, In the first draining step, a drain pipe connected to either the chamber or the treatment tank is opened to the atmosphere outside the chamber, and the second liquid is discharged to the outside of the chamber through the drain pipe. Substrate processing method.

7. The substrate processing method according to claim 5 or 6, In the first pressurizing step, a mixed gas containing an organic solvent and an inert gas is supplied to the substrate in the chamber. Substrate processing method.

8. The substrate processing method according to claim 7, the mixed gas contains at least one of a gas of the organic solvent and a liquid of the organic solvent; Substrate processing method.

9. A substrate processing method according to any one of claims 5 to 8, a second immersion step of immersing the substrate in a third liquid stored in the processing tank after the first pressurizing step; Further provided with Substrate processing method.

10. The substrate processing method according to claim 9, the atmosphere in the chamber contains an organic solvent from the first pressurizing step until the substrate is immersed in the third liquid; Substrate processing method.

11. The substrate processing method according to claim 9 or 10, the third liquid is either a diluted organic solvent or pure water; Substrate processing method.

12. The substrate processing method according to claim 1, wherein The spraying step sprays at least one of droplets of the first liquid and a mist of the first liquid. Substrate processing method.

13. The substrate processing method according to claim 1, wherein The spraying step sprays the first liquid using at least one of a shower head nozzle and a two-fluid nozzle. Substrate processing method.

14. The substrate processing method according to claim 1, wherein In the spraying step, the substrate is further moved up and down or swung in the chamber. Substrate processing method.

15. The substrate processing method according to claim 1, wherein The spraying step includes at least one of a first spraying step and a second spraying step, the first spraying step sprays a diluted organic solvent as the first liquid; In the second spraying step, an undiluted organic solvent is sprayed as the first liquid. Substrate processing method.

16. In the substrate processing apparatus, a chamber containing a plurality of substrates; a decompression unit that decompresses the interior of the chamber; a first supply unit that supplies a first gas containing an organic solvent gas and a second gas containing an organic solvent gas to the substrate in the chamber; a second supply unit that supplies a water repellent agent to the substrate in the chamber; a spray unit that sprays a first liquid containing an organic solvent onto the substrate in the chamber; a control unit that controls the decompression unit, the first supply unit, the second supply unit, and the spray unit to perform a first gas treatment, a water-repellent treatment, a spray treatment, and a second gas treatment; Equipped with In the first gas processing, the first supply unit supplies the first gas to the substrate while the pressure inside the chamber is reduced by the decompression unit; In the water-repellent treatment, the second supply unit supplies the water-repellent agent to the substrate while the pressure inside the chamber is reduced by the decompression unit; In the spraying process, the spray unit sprays the first liquid onto the substrate while the pressure inside the chamber is reduced by the decompression unit; In the second gas processing, the first supply unit supplies the second gas to the substrate while the pressure inside the chamber is reduced by the decompression unit; After the water repellent treatment, the second gas treatment is performed. Substrate processing equipment.

17. In the substrate processing apparatus, a chamber containing a plurality of substrates; a treatment tank disposed within the chamber and configured to store a second liquid; a holder for holding a plurality of the substrates; a decompression unit that decompresses the interior of the chamber; a first supply unit that supplies a first gas containing an organic solvent gas to the substrate in the chamber; a second supply unit that supplies a water repellent agent to the substrate in the chamber; a spray unit that sprays a first liquid containing an organic solvent onto the substrate in the chamber; a control unit that controls the decompression unit, the first supply unit, the second supply unit, and the spray unit to perform a first immersion treatment, a first gas treatment, a water-repellent treatment, and a spray treatment; Equipped with In the first immersion treatment, the holding unit immerses the plurality of substrates in the second liquid stored in the treatment tank; In the first gas processing, the first supply unit supplies the first gas to the substrate while the pressure inside the chamber is reduced by the decompression unit; In the water-repellent treatment, the second supply unit supplies the water-repellent agent to the substrate while the pressure inside the chamber is reduced by the decompression unit; In the spraying process, the spray unit sprays the first liquid onto the substrate while the pressure inside the chamber is reduced by the decompression unit; the substrate is positioned above the treatment tank during the first gas treatment, the water-repellent treatment, and the spraying treatment; Substrate processing equipment.

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