Film-forming method, film-forming apparatus, and laminate

Abstract

The present invention provides a film forming method which is characterized in that, in a step for forming a film on a base material and a step for discharging a gas by means of a gas discharge means, film formation and discharge of a gas are carried out by: arranging a channel plate above the base material so that the channel plate faces the base material with a space therebetween; forming a mixed gas stream, which linearly flows from a mixed gas supply means toward the gas discharge means, so that a mixed gas flows along at least a part of a main surface of the base material in the space above the base material; providing a part of the channel plate and / or a part of a stage with a projection so as to prevent the mixed gas stream from deviating from the path from the mixed gas supply means toward the gas discharge means; and arranging the channel plate and the projection so as to form an air gap which has a width d2 that is smaller than the shortest distance d1 in the space between the channel plate and the base material. Consequently, the present invention is able to provide a film forming method that is capable of producing a high-quality film, which is significantly reduced in surface defects and adhesion of foreign materials, with high productivity.

Description

[Technical Field]

[0001] The present invention relates to a film-forming method, a film-forming apparatus, and a laminate, in which an atomized liquid raw material is supplied to a substrate to form a film. [Background technology]

[0002] As a method capable of forming epitaxial films at low temperatures and atmospheric pressure, a film-forming method using water particles, such as mist CVD, is known. Patent Document 1 shows a film-forming device that forms a film by supplying a raw material mist to a substrate from a nozzle that is arranged at an angle to the substrate. Patent Document 2 also shows a film-forming device that conveys the raw material mist into a reaction vessel with a carrier gas and further generates a swirling flow. The relevant A film forming method is described in which the mist reacts with a substrate.

[0003] However, conventional film-forming methods have not been able to adequately control the raw material mist on the substrate, which has resulted in difficulties in forming a film of uniform thickness on a practically sized large-diameter substrate. Furthermore, there have been problems with foreign matter such as powder generated by the turbulent flow of the mist adhering to the substrate surface, resulting in reduced film quality and yield. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2018-142637 [Patent Document 2] Japanese Patent Application Laid-Open No. 2016-146442 Summary of the Invention [Problem to be solved by the invention]

[0005] The present invention has been made to solve the above problems, and aims to provide a film production method capable of highly productively producing high-quality films with significantly reduced surface defects and particle adhesion, a film production apparatus capable of highly productively producing high-quality films with significantly reduced surface defects and particle adhesion, and a laminate with few particles on its main surfaces. [Means for solving the problem]

[0006] In order to solve the above problems, the present invention provides: atomizing the raw material solution to form a raw material mist; mixing the raw material mist with a carrier gas to form a mixture; placing a substrate on a stage; supplying the gas mixture from a gas mixture supply means to the substrate to form a film on the substrate; a step of exhausting the air-fuel mixture after the film formation by an exhaust means; Including, In the step of forming a film on the substrate and the step of evacuating the gas by the exhaust means, a channel plate is disposed on the substrate so as to face the substrate with a space therebetween; forming a mixed gas flow that flows linearly from the mixed gas supply means toward the exhaust means in the space above the base so that the mixed gas flows along at least a part of the main surface of the base; a convex portion is formed on a part of the channel plate and / or a part of the stage so as to prevent the mixed gas flow from diverging from a direction from the mixed gas supply means toward the exhaust means; The film forming method is characterized in that the channel plate and the convex portion are arranged so that a gap having a width d2 smaller than the shortest distance d1 in the space between the channel plate and the substrate is formed, and the film forming and the evacuation are carried out.

[0007] Such a film forming method is capable of suppressing particle adhesion and forming a high-quality film uniformly on the surface of the substrate.

[0008] At this time, it is preferable that the step of placing the substrate on the stage is carried out so that the difference in height between the upper surface of the stage and the upper surface of the substrate is 1 mm or less.

[0009] Such a film forming method can more easily suppress the adhesion of particles.

[0010] In this case, it is preferable to arrange the channel plate and the convex portion so that the shortest distance d1 is 1.5 times or more the width d2.

[0011] Such a film forming method makes it possible to form a film of higher quality.

[0012] In this case, it is preferable to arrange the channel plate and the convex portion so that the shortest distance d1 is at least twice the width d2.

[0013] Such a film forming method makes it possible to more stably form a film of higher quality.

[0014] In this case, the convex portion may be formed on a part of the channel plate.

[0015] Such a film-forming method can be a film-forming method that can more easily form a high-quality film uniformly.

[0016] In this case, the protrusion may be formed on a part of the stage.

[0017] Such a film-forming method can be a film-forming method that can more easily form a high-quality film uniformly.

[0018] In addition, the present invention provides a method for manufacturing a liquid feedstock, comprising: atomizing means for atomizing a raw material solution to form a raw material mist; a carrier gas supply means for transporting the raw material mist; a stage on which a substrate is placed; a gas mixture supply means for supplying a gas mixture obtained by mixing the raw material mist and the carrier gas to the surface of the substrate; a channel plate disposed on the base body so as to face the base body with a space therebetween; an exhaust means for exhausting the air-fuel mixture in the space; a protrusion formed on a part of the channel plate and / or a part of the stage so as to prevent the flow of the gas mixture from deviating from a direction from the gas mixture supply means toward the exhaust means; A film forming apparatus comprising: The present invention provides a film forming apparatus characterized in that the channel plate and the convex portion are arranged so as to form a gap having a width d2 that is smaller than the shortest distance d1 in the space between the channel plate and the substrate.

[0019] Such a film forming apparatus is capable of suppressing particle adhesion and forming a high-quality film uniformly on the surface of a substrate.

[0020] The stage may have a counterbore in a mounting portion for the substrate, into which the substrate is to be placed.

[0021] By providing such a recess, the difference in height (height difference) between the top surface of the stage and the top surface of the base can be adjusted, and the generation of turbulence due to the step between the stage and the base can be sufficiently suppressed, thereby suppressing the generation of particles, and the generation of mist distribution can be sufficiently suppressed, preventing the film thickness distribution from becoming too large.

[0022] The channel plate and the protrusion are preferably arranged so that the shortest distance d1 is 1.5 times or more the width d2.

[0023] Such a film forming apparatus makes it possible to form a film of higher quality.

[0024] It is more preferable that the channel plate and the protrusion are arranged so that the shortest distance d1 is at least twice the width d2.

[0025] Such a film forming apparatus makes it possible to more stably form films of even higher quality.

[0026] The convex portion may be formed on a part of the channel plate.

[0027] Such a film forming apparatus can more easily form a high-quality film uniformly.

[0028] The protrusion may be formed on a part of the stage.

[0029] Such a film forming apparatus can more easily form a high-quality film uniformly.

[0030] In addition, the present invention provides a substrate, an α-Ga2O3 film laminated directly or indirectly on the substrate; A laminate comprising: The density of particles with a diameter of 0.5 μm or more on the main surface of the laminate is 9 particles / 10 cm 2 A laminate is provided, characterized in that:

[0031] Such a laminate can have a high-quality α-Ga2O3 film with reduced particle adhesion.

[0032] The area of ​​the main surface of the substrate is 5 cm 2 It can be the above.

[0033] In the present invention, the area of ​​the main surface of the substrate is 5 cm 2 Even with the above, it is possible to obtain a high-quality α-Ga2O3 film in which particle adhesion is suppressed. [Effects of the Invention]

[0034] As described above, the film forming method of the present invention makes it possible to produce high-quality films, such as thin films, with significantly reduced surface defects and adhesion of foreign matter such as particles, with high productivity.

[0035] Furthermore, the film forming apparatus of the present invention makes it possible to produce high-quality films, such as thin films, with significantly reduced surface defects and adhesion of foreign matter such as particles, with high productivity.

[0036] Furthermore, the laminate of the present invention can have a high-quality α-Ga2O3 film in which particle adhesion is suppressed. [Brief explanation of the drawings]

[0037] [Figure 1] 1 is a schematic diagram showing a typical example of a film-forming apparatus that can be used in the film-forming method according to the present invention. [Figure 2] 1 is a diagram showing the bottom of a representative form of a channel plate that can be used in the film forming method according to the present invention. [Figure 3] 1 is a schematic side view showing a typical arrangement of a channel plate, a protrusion, and a stage in a film forming method according to the present invention. [Figure 4] FIG. 4 is another side view of the arrangement shown in FIG. 3. [Figure 5] 10 is a schematic side view showing another example of the arrangement of a channel plate, a convex portion, and a stage in the film forming method according to the present invention. FIG. [Figure 6] 10 is a schematic side view showing another example of the arrangement of a channel plate, a convex portion, and a stage in the film forming method according to the present invention. FIG. [Figure 7] FIG. 7 is a plan view of the embodiment of FIG. 6 as seen from vertically above. [Figure 8] 10 is a schematic side view showing another embodiment of the film forming section in an example of a film forming apparatus that can be used in the film forming apparatus according to the present invention. FIG. [Figure 9] 1 is a schematic cross-sectional view of an example of a laminate of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0038] As described above, there has been a demand for the development of a film production method that can produce high-quality films with significantly reduced surface defects and foreign matter adhesion with high productivity.

[0039] As a result of extensive research into the above-mentioned problems, the inventors have found that a film formation method and film formation apparatus using a mist CVD method, in which a channel plate is placed on a substrate so as to face the substrate across a space, a mixed gas flow is formed in a straight line from the mixed gas supply means toward the exhaust means in the space above the substrate so that the mixed gas flows along at least a part of the main surface of the substrate, and convex portions are formed on part of the channel plate and / or part of the stage so as to prevent the mixed gas flow from deviating from the direction from the mixed gas supply means toward the exhaust means, and the channel plate and the convex portions are positioned so as to form a gap having a width d2 which is smaller than the shortest distance d1 in the space between the channel plate and the substrate, can suppress turbulence in the flow of the mixed gas and can produce high-quality films with significantly reduced surface defects and adhesion of foreign matter such as particles with high productivity, and have completed the present invention.

[0040] That is, the present invention provides: atomizing the raw material solution to form a raw material mist; mixing the raw material mist with a carrier gas to form a mixture; placing a substrate on a stage; supplying the gas mixture from a gas mixture supply means to the substrate to form a film on the substrate; a step of exhausting the air-fuel mixture after the film formation by an exhaust means; Including, In the step of forming a film on the substrate and the step of evacuating the gas by the exhaust means, a channel plate is disposed on the substrate so as to face the substrate with a space therebetween; forming a mixed gas flow that flows linearly from the mixed gas supply means toward the exhaust means in the space above the base so that the mixed gas flows along at least a part of the main surface of the base; a convex portion is formed on a part of the channel plate and / or a part of the stage so as to prevent the mixed gas flow from diverging from a direction from the mixed gas supply means toward the exhaust means; This is a film forming method characterized in that the channel plate and the convex portion are positioned so that a gap having a width d2 smaller than the shortest distance d1 in the space between the channel plate and the substrate is formed, and the film forming and the evacuation are carried out.

[0041] The present invention also provides a method for producing a raw material mist by atomizing a raw material solution; a carrier gas supply means for transporting the raw material mist; a stage on which a substrate is placed; a gas mixture supply means for supplying a gas mixture obtained by mixing the raw material mist and the carrier gas to the surface of the substrate; a channel plate disposed on the base body so as to face the base body with a space therebetween; an exhaust means for exhausting the air-fuel mixture in the space; a protrusion formed on a part of the channel plate and / or a part of the stage so as to prevent the flow of the gas mixture from deviating from a direction from the gas mixture supply means toward the exhaust means; A film forming apparatus comprising: This is a film forming apparatus characterized in that the channel plate and the convex portion are arranged so as to form a gap having a width d2 which is smaller than the shortest distance d1 in the space between the channel plate and the substrate.

[0042] The present invention also provides a substrate and a an α-Ga2O3 film laminated directly or indirectly on the substrate; A laminate comprising: The density of particles with a diameter of 0.5 μm or more on the main surface of the laminate is 9 particles / 10 cm 2 A laminate characterized in that:

[0043] The present invention will be described in detail below with reference to the drawings, but the present invention is not limited thereto.

[0044] [Film forming method] First, an example of a film-forming apparatus that can be used in the film-forming method according to the present invention will be described.

[0045] A typical example of a film-forming apparatus that can be used in the film-forming method according to the present invention is shown in Fig. 1. However, the film-forming apparatus that can perform the film-forming method according to the present invention is not limited to the film-forming apparatus shown in Fig. 1.

[0046] The film forming apparatus 1 shown in Figure 1 includes a carrier gas 11, a carrier gas pipe 12, an atomizing device 20, a mist pipe 24, a gas mixture supply means 35, a stage 32, a rectifying plate 101, and an exhaust means 36, and a substrate 34 on which a film is to be formed is placed on the stage 32 (step of placing the substrate on the stage). The carrier gas 11 and the carrier gas pipe 12 constitute a carrier gas supply unit 10. The rectifying plate 101 and the stage 32 constitute a rectifying mechanism, which will be described below, and the gas mixture supply means 35, the stage 32, the rectifying plate 101, the exhaust means 36, and the stage 32 constitute a film forming unit 30. Note that 35a is an outlet, and 36a is an exhaust port.

[0047] A raw material solution 21 is stored as a raw material inside the atomization device 20. The raw material solution 21 is not particularly limited as long as it is a solution that can be atomized (also called "misted"), and an organic solvent solution such as an alcohol or ketone solution or an aqueous solution containing raw materials according to the purpose can be used.

[0048] The raw material solution 21 is atomized by a known means to form a raw material mist 22. This atomization is an example of the step of forming a raw material mist in the film forming method according to the present invention.

[0049] Carrier gas 11 is further supplied to atomization device 20 and mixed with raw material mist 22 to form gas mixture 23. This is an example of a step of forming a gas mixture in the film production method according to the present invention. It can be said that carrier gas supply unit 10 and atomization device 20 constitute mechanism 40 for forming gas mixture 23. Gas mixture 23 is transported through mist piping 24 and supplied to gas mixture supply means 35.

[0050] The gas mixture 33 is supplied from the gas mixture supply means 35 to the space 31 in the rectification mechanism formed between the rectification plate 101 and the stage 32, and is supplied to the substrate 34 placed on the stage 32, particularly to the surface of the substrate 34, while being rectified in the rectification mechanism. During this process, the gas mixture 33 reacts with the substrate 34, and a film is formed on the substrate 34. This is an example of a step of forming a film on the substrate in the film formation method according to the present invention.

[0051] The surplus gas-air mixture 33 that did not contribute to film formation and by-products generated during the reaction between the gas-air mixture 33 and the substrate 34 are sucked into the gas-air mixture after film formation by the exhaust means 36 and discharged to the outside of the system. This is an example of the step of exhausting gas by the exhaust means in the film formation method according to the present invention. The exhaust gas from the exhaust means 36 may be treated by a particle collector, scrubber, or the like (not shown) as needed.

[0052] The atomization of the raw material solution 21 is not particularly limited as long as it can atomize or turn the raw material solution 21 into droplets, and any known means may be used. However, in the present invention, an atomization means using ultrasonic waves is preferred. The mist or droplets obtained using ultrasonic waves are preferable because they have an initial velocity of zero and float in the air. For example, rather than being sprayed like a spray, the mist floats in space and can be transported as a gas, which is highly suitable because it is not damaged by collision energy. The droplet size is not particularly limited and can be on the order of a few millimeters, but is preferably 50 μm or less, and more preferably 0.1 to 10 μm.

[0053] The carrier gas 11 is not particularly limited, and suitable examples include air, oxygen, ozone, inert gases such as nitrogen and argon, and reducing gases such as hydrogen gas and forming gas. The carrier gas 11 may be one type or two or more types. The flow rate of the carrier gas may be appropriately set depending on the size of the substrate and the size of the deposition chamber, and may be, for example, about 0.01 to 100 L / min.

[0054] Although not shown, it is also possible to adjust the ratio of the raw material mist 22 to the carrier gas 11 by further adding a dilution gas. The flow rate of the dilution gas may be set appropriately, for example, to 0.1 to 10 times the flow rate of the carrier gas per minute. The dilution gas may be supplied, for example, downstream of the atomization device 20. The dilution gas may be the same as the carrier gas 11, or may be different.

[0055] The film formation may be carried out under any of atmospheric pressure, elevated pressure, and reduced pressure, but is preferably carried out under atmospheric pressure in terms of equipment cost and productivity.

[0056] 1 shows a configuration using one atomization device, but the film-forming device that can be used in the film-forming method of the present invention is not limited to this, and multiple atomization devices can be connected in series or parallel. In this case, each atomization device may contain a different raw material solution, or the same raw material. Furthermore, each raw material may be atomized individually and supplied independently to the gas mixture supply means 35, or multiple types of raw material mists may be mixed and then supplied to the gas mixture supply means 35.

[0057] The mist piping 24 is not particularly limited as long as it is sufficiently stable against the raw material solution 21 used and the temperatures at the interface between the gas mixture supply means 35 and the carrier gas piping 12, and can be made of resin, metal, glass, or a combination of these materials depending on the purpose.

[0058] There are no particular limitations on the form or supply method of the gas mixture supply means 35, and a wide variety of known gas mixture supply means can be applied. There are no particular limitations on the shape of the discharge port 35a, but it is preferable that it be slit-shaped in order to make the flow of the gas mixture 33 a more uniform laminar flow. In this case, the longitudinal length of the discharge port 35a can be made long enough to match the shape of the base body.

[0059] Furthermore, the gas mixture supply means 35 is not particularly limited as long as it is sufficiently stable against the raw material solution 21 used and the temperature at which it is used, and can be made of resin, metal, glass, or a combination of these materials depending on the purpose.

[0060] The form of exhaust means 36 is not particularly limited, and a wide variety of known exhaust means can be applied, but it is preferable that exhaust port 36a has an opening with a length equal to or greater than the longitudinal length of straightening plate 101. This makes it possible to maintain a good flow of gas-air mixture 33. Furthermore, exhaust means 36 is not particularly limited as long as it is sufficiently stable against raw material solution 21 used and the temperature at which it is used, and can be made of resin, metal, glass, or a combination of these materials depending on the purpose.

[0061] The exhaust volume of the exhaust means 36 may be adjusted appropriately depending on the film-forming conditions, but is preferably about 70 to 150%, and more preferably about 80 to 130%, of the flow rate of the gas-air mixture 33 in order to maintain a laminar flow of the gas-air mixture 33. As will be clear from the example of the rectifying mechanism according to the present invention described later, when the exhaust volume is small compared to the flow rate of the gas-air mixture, the gas-air mixture is exhausted directly to the exhaust means side, and when the exhaust volume is large compared to the flow rate of the gas-air mixture, the difference in air flows in from the gas-air mixture supply means side together with the gas-air mixture, so that in either case the flow of the gas-air mixture 33 flowing within the space 31 is maintained without being disturbed.

[0062] In addition, Figure 1 shows a configuration in which the mixture 33 is discharged horizontally from the horizontally arranged discharge port 35a and exhausted from the horizontally arranged exhaust port 36a, but the film formation device that can be used in the film formation method of the present invention is not limited to this, and the discharge port 35a and the exhaust port 36a may be arranged so that the discharge direction and / or the exhaust direction form any angle from horizontal to vertical with respect to the stage 32.

[0063] (Example of placement) Next, with reference to FIGS. 1 to 6, several examples of arrangements in the step of forming a film on a substrate and the step of evacuating by an evacuation means in the film forming method according to the present invention will be described.

[0064] First, a channel plate is placed on the base 34 so as to face the base 34 across the space 31. As the channel plate, for example, a channel plate 102 as a part of a rectifying plate 101 as representatively shown in FIG.

[0065] In the step of forming a film on the substrate and the step of exhausting by the exhaust means, as shown in FIG. 1, a gas mixture flow 33 is formed in a space 31 above the substrate 34, flowing linearly from the gas mixture supply means 35 toward the exhaust means 36 so that the gas mixture 33 is along at least a part of the main surface of the substrate 34.

[0066] Furthermore, a protrusion 103 is formed on a part of the channel plate 102 and / or a part of the stage 32 so as to prevent the gas mixture flow 33 from diverging from the direction from the gas mixture supply means 35 toward the exhaust means 36 .

[0067] Fig. 2 shows a representative type of straightening plate including a channel plate, and a straightening mechanism equipped with this straightening plate. The straightening mechanism 100 shown in Fig. 2 includes a straightening plate 101 composed of a channel plate 102 and a protrusion 103. The protrusion 103 is arranged parallel to the outer edge of the channel plate 102, and a mixture 33 of raw material mist and carrier gas flows in the longitudinal direction of the protrusion 103 in the area sandwiched between the protrusions 103.

[0068] Furthermore, as will be explained in more detail later with reference to Figures 3 and 4, the channel plate 102 and the convex portion 103 included in this straightening mechanism 100 are arranged so as to form a gap having a width d2 that is smaller than the shortest distance d1 in the space 31 between the channel plate 102 and the substrate 34, and then film formation and evacuation are performed.

[0069] By performing film formation and evacuation in this arrangement, it is possible to suppress turbulence in the flow of the air-fuel mixture 33, thereby enabling high-quality films with significantly reduced surface defects and foreign matter adhesion to be produced with high productivity.

[0070] The shape of the channel plate 102 is not particularly limited, and its main surface can be polygonal, circular, elliptical, or any other shape. The bottom of the channel plate 102 needs to be at least flat, and may be a smooth surface or may be a processed surface according to the purpose or use, such as sandblasted to prevent powder adhesion.

[0071] The shape of the protrusions 103 is not particularly limited, and their cross sections can be polygonal, circular, elliptical, or any other shape. Furthermore, any material may be used as long as it has sufficient stability depending on the characteristics and temperature conditions of the raw materials used. In this case, metals such as aluminum and stainless steel may be used. However, when film formation is performed at a higher temperature than the heat resistance temperature of these metals or when acidic or alkaline raw materials are used, alloys such as Hastelloy, soda-lime glass, borosilicate glass, quartz, silicon carbide, or ceramics such as silicon nitride and aluminum nitride may also be used.

[0072] The structure of the rectifier mechanism 100 other than those described above is not particularly limited, and may be any material as long as it has sufficient stability depending on the characteristics of the raw materials used and the temperature conditions. In this case, metals such as aluminum and stainless steel may be used, but when film formation is performed at a higher temperature than the heat resistance temperature of these metals or when an acidic or alkaline raw material is used, alloys such as Hastelloy, soda-lime glass, borosilicate glass, quartz, silicon carbide, or ceramics such as silicon nitride and aluminum nitride may also be used.

[0073] Fig. 3 is a schematic side view showing a representative arrangement of a channel plate, a protrusion, and a stage in the film forming method according to the present invention when using the current plate 101 shown in Fig. 2. Fig. 4 is another side view of the arrangement shown in Fig. 3.

[0074] 3 is a diagram illustrating an example of an arrangement in the film forming unit 30 shown in FIG. 1, and shows a side view of the rectifying mechanism 100 in the flow direction of the gas-air mixture 33. FIG. 4 is another side view of the rectifying mechanism 100 shown in FIG. 3, and shows a side view of the rectifying mechanism 100 in a direction perpendicular to the flux of the gas-air mixture 33.

[0075] 3 and 4, like the straightening plate 101 shown in FIG. 2, has a channel plate 102 and a protrusion 103, and the protrusions 103 are formed on left and right end portions 104 of the channel plate 102 in FIG. 3. Each of the protrusions 103 is formed parallel to the flow direction of the air-fuel mixture 33 in FIG. 4. Note that in FIG. 4, one protrusion 103 is shown at the forefront, and another protrusion not shown in FIG. 4 is located at the rearmost side.

[0076] The rectification mechanism 100 shown in FIGS. 3 and 4 includes a channel plate 102, a protrusion 103, and a portion 32a of the stage 32 facing the protrusion 103.

[0077] The rectifying plate 101 forms a space 31 between the surface of the channel plate 102 and the surface of the base 34, and is installed so as to maintain a constant minimum distance d1 between the surface of the channel plate 102 and the surface of the base 34 in this space 31. The convex portion 103 is also installed so as to maintain a constant minimum distance (width) d2 of a gap 37 between the lower end of the convex portion 103 and the surface of the stage 32. As shown in FIG. 3, the space 31 and the gap 37 are continuous.

[0078] The flow straightening mechanism 100 as shown in FIGS. 3 and 4 straightens the air-fuel mixture 33 supplied from outside the flow straightening mechanism 100.

[0079] In this case, the channel plate 102 and the convex portion 103 are arranged so that d1>d2. More preferably, they are arranged so that d1 / d2≧1.5, even more preferably so that d1 / d2≧2, and particularly preferably so that d1 / d2≧3. The upper limit of d1 / d2 is not particularly limited, but can be, for example, d1 / d2≦6. While d1 and d2 may be appropriately set depending on the flow rate of the gas mixture to be supplied, in the film-forming method according to the present invention, generally, increasing d1 tends to decrease the yield of raw materials. Therefore, more specifically, d1 is preferably 0.5 mm to 5 mm, and d2 is preferably 0.1 mm to 3 mm.

[0080] If the shortest distance d1 is less than the width d2, part of the gas-air mixture 33 may leak out from under the convex portion 103 to the outside, or outside air may flow into the flow of the gas-air mixture 33, disrupting the flow of the gas-air mixture 33, which not only hinders uniform film formation but also causes particles to adhere to the film formation surface, resulting in defects.

[0081] Particles are fine particles formed by the precipitation of solid components in the raw material mist, powder formed by these particles, and miscellaneous particles mixed in from the outside air. Defects caused by the adhesion of particles include dislocations and cracks caused by abnormally grown grains that grow around particles as nuclei.

[0082] The particles are generally submicron to submillimeter in size, but their shape and number can be easily quantitatively evaluated using known techniques, such as a detection method that combines measurement of scattered light from light irradiated onto a substrate with image recognition of the light scattering locations.More simply, they can also be evaluated as bright spots in the dark field of an optical microscope.

[0083] Furthermore, it is preferable to arrange the stage 32 and the substrate 34 so that the difference in height (height) h between the upper surface of the stage 32 and the upper surface of the substrate 34 is between 0 mm and 1 mm. If the difference in height h is 1 mm or less, the generation of turbulence due to the difference in height between the stage 32 and the substrate 34 can be sufficiently suppressed, thereby suppressing the generation of particles, and the generation of mist distribution can be sufficiently suppressed, thereby preventing the film thickness distribution from becoming large.

[0084] Therefore, the mounting portion 32d of the stage 32 for the substrate 34 is provided with a countersunk portion 32e shaped to accommodate the substrate 34 depending on the thickness of the substrate 34 and the film formation conditions, and the substrate 34 can be mounted on the countersunk portion 32e.

[0085] 3 and 4 show an example of an arrangement in which the width d2 of the gap 37 is formed by the upper surface of the protrusion 103 and the portion 32a of the stage 32. However, the arrangement performed in the film forming method of the present invention is not limited to this. For example, as shown in FIG. 5, a protrusion 32b may also be formed on a portion of the stage 32, and the gap 37 having the width d2 may be formed between a portion 103a of the side surface of the protrusion 103 formed on a portion of the current plate 101 and a portion 32c of the side surface of the protrusion 32b on the stage 32. 102 denotes a channel plate, and 34 denotes a substrate. 31 denotes a space formed between the substrate 34 and the channel plate 102, and the shortest distance between the substrate 34 and the channel plate 102 in this space is d1. The shortest distance d1 is greater than the width d2.

[0086] 5 includes a protrusion 32b formed on a part of the stage 32 and a part of the rectifying plate 101 facing this protrusion 32b. The rectifying mechanism 100 shown in FIG. 5 also includes a protrusion 103 formed on a part of the rectifying plate 101 and a part of the stage 32 facing this protrusion 103.

[0087] In the above, an embodiment has been shown in which the convex portions constituting the rectifying mechanism 100 are provided on the rectifying plate 101, but the arrangement performed in the film forming method of the present invention is not limited to this, and for example, an arrangement in which the convex portions 32b are formed only on the stage 32 side as shown in FIG. 6 may also be used. In this embodiment, the rectifying plate 101 is composed only of a channel plate 102. Note that 34 is a base. Furthermore, 31 is a space formed between the base 34 and the channel plate 102, and the shortest distance between the base 34 and the channel plate 102 in this space is d1.

[0088] 6 includes a protrusion 32b formed on the stage 32, a portion 101a of a rectifying plate 101 (channel plate 102) facing the protrusion 32b, and a gap 37 of width d2 between them. The width d2 is smaller than the shortest distance d1.

[0089] Fig. 7 is a view of the configuration of Fig. 6 as seen from the rectifying plate 101 (channel plate 102) side. Note that Fig. 7 shows, as an example, a configuration in which a film is formed on a substrate 34 while moving the stage 32 in the direction of the arrow. In this case, the convex portion 32b can be installed so that the convex portion 32b and the channel plate 102 maintain the rectifying mechanism 100 shown in Fig. 6 throughout the entire movable range of the stage 32.

[0090] The film-forming apparatus that can be used in the film-forming method according to the present invention can be modified in various ways.

[0091] For example, in FIG. 1, the gas mixture supply means 35 and the exhaust means 36 are arranged separately from the straightening plate 101, but the film forming apparatus that can be used in the film forming method of the present invention is not limited to this, and the gas mixture supply means 35 and / or the exhaust means 36 can also be configured integrally with, for example, the stage 32 or the straightening plate 101.

[0092] Figure 8 is a diagram showing one embodiment of the film forming unit 30 in which the gas mixture supply means 35 and the exhaust means 36 are integrally configured with the channel plate 102 described in Figures 2 to 4. In the embodiment of Figure 8, the gas mixture 33 is discharged toward the stage from the outlet 35a connected to the channel plate 102, becomes a horizontal flow by the rectification mechanism formed by the channel plate 102 and the stage 32, and is exhausted from the exhaust port 36a arranged downward at the end of the channel plate in the flow direction of the gas mixture 33.

[0093] It is preferable that the connection portion between the rectifying plate 101 (channel plate 102) and the discharge port 35a and / or the connection portion between the rectifying plate 101 (channel plate 102) and the exhaust port 36a have a curved surface, which can improve the flow of the air-fuel mixture 33.

[0094] In the embodiment of FIG. 8, the stage 32 is set so as to keep the film forming surface of the substrate 34 and the bottom surface of the gas mixture supply means 35 parallel to each other.

[0095] The structure of the stage 32 is not particularly limited, and it need only be stable enough depending on the characteristics of the raw materials used and the temperature conditions. In this case, metals such as aluminum and stainless steel may be used, but when film formation is performed at a higher temperature than the heat resistance temperature of these metals or when acidic or alkaline raw materials are used, alloys such as Hastelloy, soda-lime glass, borosilicate glass, quartz, silicon carbide, or ceramics such as silicon nitride and aluminum nitride may also be used.

[0096] Although not shown, the film forming unit 30 may further include a known heating means, such as a resistance heater or a lamp heater, for heating the substrate 34. In this case, the heater may be built into the stage 32, or may be installed externally to the stage 32. The stage 32 may also include a mechanism for holding the substrate 34. In this case, known substrate holding methods such as a vacuum chuck, a mechanical clamp, or an electrostatic chuck can be used. Within this range, the stage 32 may also further include a rotation mechanism for rotating the substrate 34 horizontally.

[0097] The substrate 34 is not particularly limited as long as it can support the film to be formed. The material of the substrate 34 is also not particularly limited and may be a known material, and may be an organic compound or an inorganic compound. Examples of the material include, but are not limited to, polysulfone, polyethersulfone, polyphenylene sulfide, polyetheretherketone, polyimide, polyetherimide, fluororesin, metals such as iron, aluminum, stainless steel, and gold, silicon, sapphire, quartz, glass, calcium carbonate, lithium tantalate, lithium niobate, gallium oxide, SiC, ZnO, and GaN. The substrate may have any shape, such as a plate-like shape (e.g., a flat plate or disc), a fibrous shape, a rod-like shape, a cylindrical shape, a prismatic shape, a cylindrical shape, a spiral shape, a spherical shape, or a ring-like shape. In particular, when the substrate is a plate-like substrate, the substrate is preferably, but not limited to, a shape with an area of ​​5 cm or less. 2 More than 10cm, preferably 2 A substrate having the above thickness and a thickness of 50 to 2000 μm, more preferably 100 to 800 μm, can be suitably used.

[0098] In addition, in the film forming method of the present invention, the substrate 34 and the current plate 101 may face each other and be stationary at a predetermined position during film formation, or a moving means (not shown) or a rotating means (not shown) may be provided that can change the relative position of the substrate 34 in the horizontal direction. By providing a moving means or a rotating means, the thickness distribution of the formed film can be improved, and film formation on a large-diameter substrate or a long substrate becomes possible.

[0099] The moving means may be a mechanism for reciprocating in a horizontal uniaxial direction. The moving speed in the uniaxial direction may be adjusted appropriately depending on the purpose, but is preferably 0.1 mm / s to 100 mm / s, and more preferably 1 mm / s to 30 mm / s. belowIt is preferable to set the rotation speed at 1 mm / s or more. If the rotation speed is 1 mm / s or more, it is possible to prevent the film formation from becoming reaction-limited, thereby achieving a sufficient yield of the raw material and reducing the chance of abnormal reactions. If the rotation speed is 100 mm / s or less, the gas mixture 33 can be made to sufficiently follow the moving motion, thereby achieving an excellent film thickness distribution. Furthermore, the rotation speed when rotating is not particularly limited as long as it is within a range that does not cause turbulence in the gas mixture 33, but it is generally preferable to rotate at a speed of 1° per second to 180° per second.

[0100] In the configuration shown in Figure 1, the straightening vane 101 is placed above the stage 32, and the film is formed with the film forming surface of the substrate 34 facing upward, but the film forming apparatus used in the film forming method of the present invention is not limited to this, and the straightening vane 101 may be placed below the stage 32, and the film may be formed with the film forming surface of the substrate 34 facing downward.

[0101] [Film forming equipment] The typical film-forming apparatus described above with reference to the drawings is an example of the film-forming apparatus of the present invention.

[0102] 1 to 8 includes an atomization device 20 as atomization means for atomizing a raw material solution 21 to form a raw material mist 22, a carrier gas supply unit 10 as means for supplying a carrier gas 11 that transports the raw material mist 22, a stage 32 on which a substrate 34 is placed, a gas mixture supply means 35 that supplies a gas mixture 23, which is a mixture of the raw material mist 22 and the carrier gas 11, to the surface of the substrate 34, a channel plate 102 that is arranged on the substrate 34 so as to face the substrate 34 across a space 31, an exhaust means 36 that exhausts the gas mixture 33 in the space 31, and a convex portion 103 formed on a part of the channel plate 102 and / or a convex portion 32b formed on a part of the stage 32 so as to prevent the flow of the gas mixture 33 from deviating from the direction from the gas mixture supply means 35 toward the exhaust means 36.

[0103] Furthermore, in the film forming apparatus 1, as shown in Figures 3 to 6, the channel plate 102 and the convex portions 103 and / or 32b are arranged so as to form a gap 37 having a width d2 that is smaller than the shortest distance d1 in the space 31 between the channel plate 102 and the base 34.

[0104] By performing film formation and evacuation using such a film formation apparatus 1, it is possible to suppress turbulence in the flow of the air-fuel mixture 33 for the reasons explained above, and thereby to produce high-quality films with significantly reduced surface defects and foreign matter adhesion with high productivity.

[0105] For details of an example of a film forming apparatus, please refer to the previous description regarding FIGS.

[0106] In particular, in the film forming apparatus 1, the channel plate 102, the convex portion 103 and / or 32b, and the stage 32 can configure the rectifying mechanism 100, as described above. Specifically, in the arrangement example shown in Figures 3 and 4, the rectifying mechanism 100 includes the channel plate 102, the convex portion 103, and a portion 32a of the stage 32 facing the convex portion 103. In the arrangement example shown in Figure 5, the rectifying mechanism 100 includes the convex portion 32b formed on a portion of the stage 32, a portion of the rectifying plate 101 (channel plate 102) facing the convex portion 32b, the convex portion 103 formed on a portion of the rectifying plate 101 (channel plate 102), and a portion of the stage 32 facing the convex portion 103. In the example arrangement shown in Figure 6, the rectifying mechanism 100 includes a convex portion 32b formed on the stage 32 and a portion 101a of the rectifying plate 101 (channel plate 102) facing this convex portion 32b, with a gap 37 of width d2 between them.

[0107] It can also be said that the exhaust means 36 is connected to the flow rectification mechanism 100 .

[0108] In the film forming apparatus 1 shown in FIG. 1, a carrier gas supply unit 10 as a carrier gas supply means supplies a carrier gas to an atomization device 20 as an atomization means through a carrier gas pipe 12. Carrier Gas 11 1, the gas mixture supply means 35 supplies a gas mixture 23 obtained by mixing the raw material mist 22 and the carrier gas 11 onto the surface of the substrate 34 through a mist pipe 24.

[0109] 3 to 6 and 8, the mounting portion 32d of the stage 32 for the substrate 34 is provided with a countersunk portion 32e shaped to accommodate the substrate 34 depending on the thickness of the substrate 34 and the film formation conditions, and the substrate 34 can be mounted on the countersunk portion 32e. By providing such a countersunk portion 32e, the height difference h between the upper surface of the stage 32 and the upper surface of the substrate 34 can be adjusted, and the generation of turbulence due to the step between the stage 32 and the substrate 34 can be sufficiently suppressed, thereby suppressing the generation of particles, and the generation of mist distribution can be sufficiently suppressed, preventing the film thickness from becoming uneven.

[0110] Furthermore, it is preferable that the channel plate 102 and the convex portions 103 and / or 32b are arranged so that the shortest distance d1 is 1.5 times or more the width d2. With the film forming apparatus 1 having such an arrangement, it is possible to form a film of higher quality.

[0111] As explained above, it is more preferable that the shortest distance d1 is at least twice the width d2, and it is particularly preferable that the shortest distance d1 is at least three times the width d2.

[0112] The protrusion 103 is preferably formed on a part of the channel plate 102 .

[0113] Such a film forming apparatus 1 can be a film forming apparatus that can more easily form a high-quality film uniformly.

[0114] The protrusion 32 b may be formed on a part of the stage 32 .

[0115] Such a film forming apparatus 1 can be a film forming apparatus that can more easily form a high-quality film uniformly.

[0116] From another perspective, the film production apparatus 1 shown in FIGS. 1 to 8 can also be called a film production system. 1 to 8, the film production system 1 includes an atomization device 20 as a mechanism for atomizing a raw material solution 21 to form a raw material mist 22, a mechanism 40 (comprised of a carrier gas supply unit 10 and the atomization device 20) for mixing the raw material mist 22 with a carrier gas 11 to form a gas mixture, a stage 32 on which a substrate 34 is placed, a film production unit 30 as a mechanism for supplying a gas mixture 33 from a gas mixture supply means 35 to the substrate 34 and forming a film on the substrate 34, an exhaust means 36 as a mechanism for exhausting the gas mixture 33 after film formation by the exhaust means 36, a channel plate 102 arranged on the substrate 34 so as to face the substrate 34 across a space 31, and a convex portion 103 formed on a part of the channel plate 102 and / or a convex portion 32b formed on a part of the stage 32 so as to prevent the flow of the gas mixture 33 from deviating from the direction from the gas mixture supply means 35 toward the exhaust means 36. The channel plate 102 and the protrusions 103 and / or 32b are arranged to form a gap 37 having a width d2 smaller than the shortest distance d1 in the space 31 between the channel plate 102 and the base 34. The film forming system may include the film forming apparatus 1 and a base.

[0117] Alternatively, a film production apparatus 1 as a film production system shown in FIGS. 1 to 8 includes an atomization device 20 as atomization means for atomizing a raw material solution 21 to form a raw material mist 22, a carrier gas supply unit 10 as a supply means for a carrier gas 11 for transporting the raw material mist 22, a substrate 34, a stage 32 on which the substrate 34 is placed, a gas mixture supply means 35 for supplying a gas mixture 23 obtained by mixing the raw material mist 22 and the carrier gas 11 to the surface of the substrate 34, and a channel plate 1 disposed on the substrate 34 so as to face the substrate 34 across a space 31. 02, exhaust means 36 for exhausting the gas mixture 33 in the space 31, and a convex portion 103 formed on a part of the channel plate 102 and / or a convex portion 32b formed on a part of the stage 32 so as to prevent the flow of the gas mixture 33 from deviating from the direction from the gas mixture supply means 35 toward the exhaust means 36, and it can also be said that the channel plate 102 and the convex portion 103 and / or 32b are arranged so as to form a gap 37 having a width d2 which is smaller than the shortest distance d1 in the space 31 between the channel plate 102 and the base 34.

[0118] [Laminate] FIG. 9 shows a schematic cross-sectional view of an example of the laminate of the present invention.

[0119] The stack 39 shown in FIG. 1 includes a substrate 34 and an α-Ga 2 O 3 film 38 stacked directly or indirectly on the substrate 34 .

[0120] The density of particles with a diameter of 0.5 μm or more on the main surface of the laminate 39 is 9 particles / 10 cm 2 These are as follows:

[0121] Such a laminate 39 can have a high-quality α-Ga2O3 film 38 in which particle adhesion is suppressed.

[0122] The density of particles with a diameter of 0.5 μm or more on the main surface of the laminate 39 is preferably as small as possible. For example, it may be 1 particle / 10 cm 2 It can be more than that.

[0123] The laminate 39 of the present invention can be obtained, for example, by the film-forming method of the present invention.

[0124] The area of ​​the main surface of the substrate 34 is 5 cm 2 It can be the above.

[0125] In the present invention, the area of ​​the main surface of the substrate 34 is 5 cm 2 Even with the above, it is possible to obtain a high-quality α-Ga2O3 film in which particle adhesion is suppressed.

[0126] The upper limit of the area of ​​the main surface of the substrate 34 is not particularly limited, but is not particularly limited to 900 cm 2 It can be as follows: [Example]

[0127] EXAMPLES The present invention will be specifically explained below using examples and comparative examples, but the present invention is not limited to these.

[0128] Example 1 In the film-forming apparatus of FIG. 1, a rectifying mechanism was arranged as described with reference to FIGS. 3 and 4, and an α-gallium oxide film was formed.

[0129] The air-fuel mixture supply means and the rectifying plate (channel plate) were made of aluminum with anodized surfaces, and a SiC hot plate with a built-in resistance heater was used as the stage. Here, the shortest distance (width) d2 of the gap between the convex part of the rectifying plate and the stage was set to 2 mm, and the shortest distance d1 between the channel plate of the rectifying plate and the surface of the substrate (described later) was set to 3 mm.

[0130] A gas cylinder filled with nitrogen gas was used to supply the carrier gas. The gas cylinder and the atomizing device were connected with a urethane resin tube, and the atomizing device and the gas mixture supply means were further connected with a quartz pipe.

[0131] The raw material solution was prepared by dissolving gallium acetylacetonate at a ratio of 0.02 mol / L in a dilute hydrochloric acid solution containing 1% by volume of 34% hydrochloric acid, stirring with a stirrer for 60 minutes, and filling the solution into an atomizer equipped with two ultrasonic vibration plates (frequency 2.4 MHz).

[0132] Next, a c-plane sapphire substrate with a thickness of 0.65 mm and a diameter of 4 inches (approximately 10 cm) was placed on the stage and heated to a substrate temperature of 400°C. At this time, the height difference between the top surface of the stage and the surface of the substrate was 0.2 mm.

[0133] Next, ultrasonic vibrations were propagated to the precursor in the atomization device through the water by an ultrasonic vibration plate, thereby atomizing (misting) the raw material solution.

[0134] Next, nitrogen gas was added to the source container at a flow rate of 25 L / min, and a mixture of mist and nitrogen gas was supplied to the mixture supply means, and the exhaust flow rate was set to 28 L / min. During this time, the stage was moved horizontally so that the outlet of the mixture supply means passed uniformly over the substrate, and film formation was carried out for 60 minutes.

[0135] Immediately after this, the supply of nitrogen gas was stopped, and the supply of the mixture to the mixture supply means was stopped.

[0136] The crystalline layer of the fabricated laminate was confirmed to be α-phase Ga2O3, as a peak appeared at 2θ=40.3° in X-ray diffraction measurement.

[0137] After this, the thickness of the fabricated film was measured at 25 points on the surface using optical reflectance analysis. The difference between the maximum and minimum measured values ​​was divided by twice the average value to obtain the film thickness distribution. In addition, the density of particles (diameter 0.5 μm or more) on the film was evaluated using a substrate inspection machine (KLA Candela-CS10). Furthermore, the crystalline orientation of the film was evaluated using the half-width of the rocking curve using XRD (Rigaku SmartLab).

[0138] Example 2 In the arrangement of the rectification mechanism shown in FIGS. 3 and 4, an α-gallium oxide film was formed in the same manner as in Example 1, except that the shortest distance d1 was 3 mm and the width d2 was 0.5 mm.

[0139] The crystalline layer of the fabricated laminate was confirmed to be α-phase Ga2O3, as a peak appeared at 2θ=40.3° in X-ray diffraction measurement. Thereafter, the film was evaluated in the same manner as in Example 1.

[0140] (Comparative Example 1) In the arrangement of the rectification mechanism shown in FIGS. 3 and 4, an α-gallium oxide film was formed in the same manner as in Example 1, except that the shortest distance d1 was set to 3 mm and the width d2 was set to 3 mm.

[0141] The crystalline layer of the fabricated laminate was confirmed to be α-phase Ga2O3, as a peak appeared at 2θ=40.3° in X-ray diffraction measurement. Thereafter, the film was evaluated in the same manner as in Example 1.

[0142] Example 3 In the film-forming apparatus of Figure 1, a film of α-gallium oxide was formed in the same manner as in Example 1, except that a rectifying mechanism was provided as described with reference to Figure 5. At this time, the height difference between the upper surface of the stage and the surface of the substrate was 0.2 mm.

[0143] The crystalline layer of the fabricated laminate was confirmed to be α-phase Ga2O3, as a peak appeared at 2θ=40.3° in X-ray diffraction measurement. Thereafter, the film was evaluated in the same manner as in Example 1.

[0144] (Comparative Example 2) In the arrangement of the rectification mechanism shown in FIG. 5, an α-gallium oxide film was formed in the same manner as in Example 3, except that the shortest distance d1 was set to 3 mm and the width d2 was set to 3 mm.

[0145] The crystalline layer of the fabricated laminate was confirmed to be α-phase Ga2O3, as a peak appeared at 2θ=40.3° in X-ray diffraction measurement. Thereafter, the film was evaluated in the same manner as in Example 1.

[0146] (Comparative Example 3) In the arrangement of the rectification mechanism shown in Figure 5, the shortest distance d1 was set to 3 mm, the width d2 was set to 3 mm, and the height difference between the top surface of the stage and the substrate surface was set to 1.2 mm, except that an α-gallium oxide film was formed in the same manner as in Example 3.

[0147] [Table 1]

[0148] Table 1 shows the evaluation results for Examples 1 to 3 and Comparative Examples 1 to 3. In all cases, the formed film was α-Ga2O3, but the results for Examples 1 to 3 showed that the film thickness distribution and rocking curve half-width were improved and the particle density was significantly reduced compared to Comparative Examples 1 to 3.

[0149] From the above results, it was found that the present invention can provide a film production method that can produce films that are higher quality and more uniform than conventional techniques.

[0150] The present invention is not limited to the above-described embodiments. The above-described embodiments are merely examples, and anything that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits similar effects is included within the technical scope of the present invention.

Claims

1. atomizing the raw material solution to form a raw material mist; mixing the raw material mist with a carrier gas to form a mixture; placing a substrate on a stage; supplying the gas mixture from a gas mixture supply means to the substrate to form a film on the substrate; a step of exhausting the air-fuel mixture after the film formation by an exhaust means; Including, In the step of forming a film on the substrate and the step of evacuating the gas by the exhaust means, a channel plate is disposed on the substrate so as to face the substrate with a space therebetween; forming a mixed gas flow that flows linearly from the mixed gas supply means toward the exhaust means in the space above the base so that the mixed gas flows along at least a part of the main surface of the base; a convex portion is formed on a part of the channel plate and / or a part of the stage so as to prevent the mixed gas flow from diverging from a direction from the mixed gas supply means toward the exhaust means; A film forming method, characterized in that the channel plate and the convex portion are positioned so that a gap having a width d2 smaller than the shortest distance d1 in the space between the channel plate and the substrate is formed, and the film forming and the evacuation are performed.

2. 2. The film forming method according to claim 1, wherein the step of placing the substrate on the stage is performed so that the difference in height between the upper surface of the stage and the upper surface of the substrate is 1 mm or less.

3. 3. The film forming method according to claim 1, wherein the channel plate and the convex portion are arranged so that the shortest distance d1 is 1.5 times or more the width d2.

4. 4. The film forming method according to claim 1, wherein the channel plate and the convex portion are arranged so that the shortest distance d1 is at least twice the width d2.

5. 5. The film forming method according to claim 1, wherein the convex portion is formed on a part of the channel plate.

6. 6. The film forming method according to claim 1, wherein the convex portion is formed on a part of the stage.

7. an atomization means for atomizing the raw material solution to form a raw material mist; a carrier gas supply means for transporting the raw material mist; a stage on which a substrate is placed; a gas mixture supply means for supplying a gas mixture obtained by mixing the raw material mist and the carrier gas to the surface of the substrate; a channel plate disposed on the base body so as to face the base body with a space therebetween; an exhaust means for exhausting the air-fuel mixture in the space; a protrusion formed on a part of the channel plate and / or a part of the stage so as to prevent the flow of the gas mixture from deviating from a direction from the gas mixture supply means toward the exhaust means; A film forming apparatus comprising: A film forming apparatus characterized in that the channel plate and the convex portion are arranged so as to form a gap having a width d2 which is smaller than the shortest distance d1 in the space between the channel plate and the substrate.

8. 8. The film forming apparatus according to claim 7, wherein the stage has a counterbore for receiving the substrate in a portion where the substrate is placed.

9. 9. The film forming apparatus according to claim 7, wherein the channel plate and the convex portion are arranged so that the shortest distance d1 is 1.5 times or more the width d2.

10. 9. The film forming apparatus according to claim 7, wherein the channel plate and the convex portion are arranged so that the shortest distance d1 is at least twice the width d2.

11. 11. The film forming apparatus according to claim 7, wherein the convex portion is formed on a part of the channel plate.

12. 12. The film forming apparatus according to claim 7, wherein the convex portion is formed on a part of the stage.

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