Sputtering coating device and equipment and its sputtering coating assembly

Abstract

The present invention discloses a sputtering coating apparatus and a sputtering coating assembly, the sputtering coating apparatus being for forming a film layer on a surface of a substrate by a sputtering coating method by bombarding a target material, the sputtering coating apparatus including a reaction cavity having a reaction chamber, an electrode assembly, and a discharge coil assembly, the electrode assembly and the discharge coil assembly being disposed in the reaction chamber, during sputtering coating, the substrate is accommodated in the reaction chamber, the target material is disposed in the electrode assembly, the electrode assembly and the discharge coil assembly are electrically connected to a radio frequency power source, and the radio frequency power source provides a radio frequency current for operation to the electrode assembly and the discharge coil assembly, thereby depositing and forming a film layer on the surface of the substrate.

Description

[Technical Field]

[0001] This application claims priority to a Chinese patent application filed with the China Patent Office on March 12, 2021, bearing application number 202110269016.2 and entitled "Sputtering coating apparatus and equipment and sputtering coating assembly therefor," the entire contents of which are incorporated herein by reference.

[0002] The present invention relates to the field of coatings, and more particularly to sputter coating apparatus and equipment and sputter coating assemblies thereof. [Background technology]

[0003] Sputtering coating is a widely used physical vapor deposition method for producing surface coating layers. It involves bombarding the surface of a target with charged particles in a vacuum chamber, and then depositing the resulting particles on the surface of a substrate to form a coating layer. Compared to conventional vacuum deposition, sputtering coating has many advantages, including strong adhesion between the film layer and the substrate, easy production of high-melting-point material films, and the ability to produce compound films by reactive sputtering.

[0004] The simplest sputtering coating method is DC diode sputtering, which involves forming a glow discharge structure using a pair of cathodes and anodes and then sputtering coating. In DC diode sputtering, the cathode serves as the sputtering target, and the substrate to be coated is placed between the two electrodes or on the anode. A high DC voltage is applied between the two electrodes under appropriate air pressure, creating a gas discharge and generating plasma. The resulting ions accelerate their impact on the cathode target under the action of the cathode electric field, sputtering the target material from the surface and depositing it on the substrate, forming a coating layer. However, the low discharge efficiency of DC diodes results in low plasma density, resulting in low sputtering yields and deposition rates. DC diode sputtering is rarely used in practice.

[0005] To improve the efficiency of sputtering coatings, people have improved upon conventional DC diode sputtering by attaching a magnet behind the cathode target, creating a strong magnetic field of several hundred gauss or more near the cathode, confining electrons near the cathode, thereby significantly increasing discharge efficiency and sputtering rates. This is the well-known DC magnetron sputtering method, which is widely used in the production of metal, alloy, and conductive compound coatings.

[0006] However, neither DC diode sputtering nor DC magnetron sputtering can be used to produce insulating coating layers because an electrical discharge cannot be generated using an insulating material as the cathode. To produce insulating coating layers using the sputtering effect, researchers have considered using radio frequency discharge (RF) technology. This involves applying a radio frequency voltage between two electrodes, fixing a sheet of insulating target material to the RF-driven electrode, and placing the substrate to be coated between the two electrodes or on the grounded electrode. A radio frequency electric field passes through the insulating target, generating a plasma between the two electrodes. This plasma acts on the surface of the insulating target, forming a self-bias, accelerating ion bombardment of the target material, sputtering the target material and depositing it on the substrate surface to form a coating layer. This sputtering coating method using RF discharge is called radio frequency sputtering. A typical RF sputtering frequency is 13.56 MHz.

[0007] Similar to the DC diode sputtering method, the radio frequency sputtering method also has the problems of low discharge efficiency, low plasma density, and low sputtering yield and deposition rate. To solve this problem, one natural solution is to combine the radio frequency discharge with the magnetron cathode, that is, to apply the radio frequency voltage to the magnetron sputtering target, which is radio frequency magnetron sputtering.

[0008] However, radio frequency magnetron sputtering has not achieved significant improvements in deposition efficiency over direct current magnetron sputtering compared to direct current diode sputtering. The deposition rate improvement of radio frequency magnetron sputtering is very limited compared to radio frequency sputtering. Typical deposition rates for DC magnetron sputtering are several hundred nanometers per minute, whereas typical deposition rates for radio frequency magnetron sputtering are only a few nanometers per minute. These low deposition rates significantly limit the industrial application of radio frequency magnetron sputtering. Many industries employ alternative methods, such as chemical vapor deposition, to achieve acceptable coating efficiencies, despite the associated problems of impurities and contamination, to produce insulating films. Radio frequency magnetron sputtering is often employed in basic scientific research where cost is a major consideration.

[0009] In fact, a detailed analysis based on plasma physics knowledge reveals that radio frequency magnetron sputtering is not a reasonable solution. The presence of a magnetic field near the target inhibits the electron cyclotron motion from responding to the radio frequency field, thereby inhibiting the electrons' absorption of radio frequency energy. This weakens ionization on the one hand and the self-bias effect on the other, preventing the effective increase of ion energy and flux in the bombarded target material. This is why the deposition efficiency of radio frequency magnetron sputtering cannot be significantly improved. Summary of the Invention [Problem to be solved by the invention]

[0010] One advantage of the present invention is that it provides a sputter coating apparatus and system and sputter coating assembly thereof that does not require the creation of a magnetic field to increase plasma density and avoids electron cyclotrons due to the presence of a magnetic field.

[0011] One advantage of the present invention is to provide a sputtering coating apparatus and facility, and a sputtering coating assembly thereof, which uses cooperation between a discharge coil and an electrode to form a high-density plasma in a space near a target material, thereby rapidly forming a film layer.

[0012] One advantage of the present invention is that it provides a sputtering coating apparatus and system and a sputtering coating assembly thereof that can form a film layer of insulating or non-insulating material, i.e., that has fewer limitations on the type of film layer material.

[0013] One advantage of the present invention is that it provides a sputter coating apparatus and system and sputter coating assembly that operates without the use of a magnetic field, thereby avoiding spatial non-uniformities caused by magnetically confined plasmas and resulting in more uniform film layers.

[0014] One advantage of the present invention is that the electrode, target material, and discharge coil mutually cover a large area, thereby providing a sputtering coating apparatus and facility and a sputtering coating assembly thereof that allows for uniform etching of the target material and high utilization of the target material.

[0015] One advantage of the present invention is that it provides a sputtering coating apparatus and system and sputtering coating assembly thereof that separates the electrode and the target material by a dielectric layer, allowing different types of target materials to be efficiently deposited on the surface of a substrate without the electrical performance of the target material affecting the deposition efficiency.

[0016] One advantage of the present invention is that, in one embodiment, a sputtering coating apparatus and facility and its sputtering coating assembly are provided in which the coil discharge region is constrained by a spacing sleeve, and further, the electrode discharge region and the discharge coil discharge region are coupled in a forward direction and then act on each other's source gas.

[0017] One advantage of the present invention is that it provides a sputtering coating apparatus and system and its sputtering coating assembly in which the sputtering deposition region is located near the electrode and discharge coil, for example, above, below, vertically, diagonally above, or diagonally below.

[0018] One advantage of the present invention is that, in one embodiment, the deposition region is located in the parallel region of the electrode and coil, and a sputtering coating apparatus and system therefor and a sputtering coating assembly therefor are provided that facilitate multi-layer or batch coating around the target material.

[0019] One advantage of the present invention is that, in one embodiment, a sputtering coating apparatus and system, and a sputtering coating assembly thereof, are provided that form multiple sputtering deposition zones in parallel, facilitating large-area or batch sputtering deposition coating. [Means for solving the problem]

[0020] In order to achieve at least one of the above advantages, one aspect of the present invention provides a sputtering coating apparatus for forming a film layer on a surface of a substrate by a sputtering coating method by bombarding a target material, the sputtering coating apparatus comprising: a reaction cavity having a reaction chamber; an electrode assembly; a discharge coil assembly; The electrode assembly and the discharge coil assembly are provided in the reaction chamber, and during sputter coating, the substrate is accommodated in the reaction chamber, the target material is provided on the electrode assembly, and the electrode assembly and the discharge coil assembly are electrically connected to a radio frequency power source, and the radio frequency power source provides an operating radio frequency current to the electrode assembly and the discharge coil assembly, thereby depositing on the surface of the substrate and forming a film layer.

[0021] In one embodiment of the sputtering coating apparatus, the electrode assembly includes a discharge electrode and a dielectric layer laminated on the discharge side of the discharge electrode, and the target material is laminated on the dielectric layer.

[0022] In one embodiment of the sputtering coating apparatus, the electrode assembly includes a discharge electrode, and the target material is directly disposed on the discharge side of the discharge electrode.

[0023] In one embodiment of the sputtering coating apparatus, the discharge coil assembly is located below the electrode assembly, and the substrate is adapted to be provided below the discharge coil assembly.

[0024] In one embodiment of the sputtering coating apparatus, the discharge coil assembly includes a coil and a spacing sleeve, and the coil is wound around the spacing sleeve.

[0025] In one embodiment of the sputtering coating apparatus, the isolation sleeve has a first opening, a second opening, and an isolation space, the isolation space is connected to the outside via the first opening and the second opening, the first opening is directed toward the target material, and the second opening is directed toward the substrate.

[0026] In one embodiment of the sputtering coating apparatus, one end of the electrode assembly and one end of the discharge coil assembly are commonly connected to the output end of the radio frequency power supply, and the other end of the reaction cavity and one end of the discharge coil assembly are commonly connected to the ground end of the radio frequency power supply.

[0027] In one embodiment of the sputtering coating apparatus, the central axis of the discharge coil assembly is perpendicular to the electrode assembly.

[0028] In one embodiment of the sputtering coating apparatus, the discharge coil assembly includes a coil, which is a planar solenoid coil, and the coil is provided on one side of the discharge electrode.

[0029] In one embodiment of the sputtering coating apparatus, the electrode assembly has an internal space, and the discharge coil assembly is disposed in the internal space.

[0030] In one embodiment of the sputtering coating apparatus, the electrode assembly includes a discharge electrode and a dielectric layer surrounding the outside of the discharge electrode, and the target material is provided outside the dielectric layer.

[0031] In one embodiment of the sputtering coating apparatus, the electrode assembly includes a discharge electrode, and the target material is directly disposed on the discharge side of the discharge electrode.

[0032] In one embodiment of the sputtering coating apparatus, the discharge coil assembly is disposed coaxially with the electrode assembly.

[0033] According to one embodiment of the sputtering coating apparatus, the discharge electrode includes a plurality of electrode units, and the inner space is formed by arranging the plurality of electrode units in a ring shape, with a gap provided between two adjacent electrode units.

[0034] According to one embodiment of the sputtering coating apparatus, the insulating material is filled into the gap.

[0035] In one embodiment of the sputter coating apparatus, the dielectric layer has a continuous cylindrical structure.

[0036] Another aspect of the present invention provides a sputtering coating apparatus for forming a film layer on a surface of a substrate by a sputtering coating method by bombarding a target material, the sputtering coating apparatus comprising: a reaction cavity having a reaction chamber; an electrode assembly; a discharge coil assembly; a radio frequency power source; The electrode assembly and the discharge coil assembly are disposed within the reaction chamber of the reaction cavity, the target material is disposed on the electrode assembly, and during sputtering coating, the substrate is accommodated within the reaction chamber, the electrode assembly and the discharge coil assembly are electrically connected to the radio frequency power supply, and the radio frequency power supply provides an operating radio frequency current to the electrode assembly and the discharge coil assembly, thereby depositing on the surface of the substrate to form a film layer.

[0037] In one embodiment of the sputtering coating equipment, the electrode assembly includes a discharge electrode and a dielectric layer laminated on the discharge side of the discharge electrode, and the target material is laminated on the dielectric layer.

[0038] In one embodiment of the sputtering coating equipment, the electrode assembly includes a discharge electrode, and the target material is directly disposed on the discharge side of the discharge electrode.

[0039] In one embodiment of the sputtering coating equipment, the discharge coil assembly includes a coil and a spacing sleeve, and the coil is wound around the spacing sleeve.

[0040] In one embodiment of the sputtering coating equipment, the discharge coil assembly includes a coil, which is a planar solenoid coil, and the coil is provided on one side of the electrode assembly.

[0041] In one embodiment of the sputtering coating equipment, the electrode assembly has an inner space, and the discharge coil assembly is disposed in the inner space.

[0042] In one embodiment of the sputtering coating equipment, the electrode assembly includes a discharge electrode and a dielectric layer surrounding the outside of the discharge electrode, and the target material is provided outside the dielectric layer.

[0043] Another aspect of the present invention provides a sputter coating discharge assembly suitable for mounting within a reaction cavity and for sputter coating a substrate in said reaction cavity, the sputter coating discharge assembly comprising: an electrode assembly; a coil; During sputter coating, the target material is placed on the electrode assembly, the coil is placed on the target material, the electrode assembly and the coil are electrically connected to a radio frequency power source, and the radio frequency power source provides an operating radio frequency current to the electrode assembly and the coil, thereby depositing on the surface of the substrate to form a film layer.

[0044] According to one embodiment of the sputtering coating discharge assembly, the electrode assembly includes a discharge electrode and a dielectric layer laminated on the discharge side of the discharge electrode, and the target material is laminated on the dielectric layer.

[0045] In one embodiment of the sputter coating discharge assembly, the electrode assembly includes a discharge electrode, and the target material is disposed directly on the discharge side of the discharge electrode.

[0046] In one embodiment of the sputter coating discharge assembly, the discharge coil assembly includes a coil, which is a planar solenoid coil, and the coil is disposed on one side of the discharge electrode. [Brief explanation of the drawings]

[0047] [Figure 1] 1 is a schematic diagram of a sputtering coating apparatus according to a first embodiment of the present invention. [Figure 2A] 2A to 2C are schematic diagrams showing the relative positions of the electrode assembly and the discharge coil assembly in different embodiments of the sputtering coating apparatus according to the first embodiment of the present invention. [Figure 2B] 2A to 2C are schematic diagrams showing the relative positions of the electrode assembly and the discharge coil assembly in different embodiments of the sputtering coating apparatus according to the first embodiment of the present invention. [Figure 3A] 2A to 2C are schematic diagrams of the relative positions of the discharge coil assembly and the target material in different embodiments of the sputter coating apparatus according to the first embodiment of the present invention. [Figure 3B] 2A to 2C are schematic diagrams of the relative positions of the discharge coil assembly and the target material in different embodiments of the sputter coating apparatus according to the first embodiment of the present invention. [Figure 4] FIG. 4 is a schematic diagram of a sputtering coating apparatus according to a second embodiment of the present invention. [Figure 5] FIG. 4 is a schematic diagram of a multi-layer stand of a sputtering coating apparatus according to a second embodiment of the present invention. [Figure 6] FIG. 10 is a schematic diagram of a sputtering coating apparatus according to a third embodiment of the present invention. [Figure 7] FIG. 10 is a schematic diagram of a sputtering coating apparatus according to a fourth embodiment of the present invention. [Figure 8] FIG. 10 is a schematic diagram of a sputtering coating apparatus according to a fifth embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0048] The following description is intended to disclose the present invention so that those skilled in the art can realize the present invention. The preferred embodiments in the following description are merely illustrative, and other obvious modifications may occur to those skilled in the art. The basic principles of the present invention defined in the following description may be applied to other implementations, modifications, improvements, equivalents, and other technical solutions without departing from the spirit and scope of the present invention.

[0049] It should be understood by those skilled in the art that, in the disclosure of the present invention, the orientations or positional relationships indicated by the terms "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," etc. are based on the orientations or positional relationships shown in the drawings, and do not indicate or imply that the devices or elements shown necessarily have a specific orientation or are constructed or operated in a specific orientation, but are merely used for the convenience and simplification of the description of the present invention, and therefore, the above terms should not be construed as limitations on the present invention.

[0050] As will be understood, the term "one" should be understood as "at least one" or "one or more," i.e., in one embodiment, the number of one element may be one, and in another embodiment, the number of this element may be multiple, and the term "one" should not be understood as a limitation on quantity.

[0051] Although embodiments describing the present invention, such as references to "one embodiment," "embodiment," "exemplary embodiment," "various embodiments," "some embodiments," etc., may include a particular feature, structure, or characteristic, each embodiment is not required to include this feature, structure, or characteristic. Furthermore, some embodiments may have some, all, or none of the features described for other embodiments.

[0052] Figure 1 is a schematic diagram of a sputtering coating apparatus 1 according to a first embodiment of the present invention. Figures 2A-2B are schematic diagrams of the relative positions of different embodiments of the electrode assembly and discharge coil assembly of the sputtering coating apparatus according to the first embodiment of the present invention. Figures 3A-3B are schematic diagrams of the relative positions of different embodiments of the discharge coil assembly and target material of the sputtering coating apparatus according to the first embodiment of the present invention.

[0053] 1, the present invention provides a sputtering coating apparatus 1, which bombards the surface of a target material 200 with charged particles and deposits the resulting particles on the surface of a substrate 100 to form a coating layer or film. That is, the sputtering coating apparatus 1 forms a film on the surface or at a predetermined position of the substrate 100 according to the process principle of sputtering coating.

[0054] The sputtering coating apparatus 1 is suitable for forming an insulating layer or a non-insulating layer by a sputtering coating method, and examples of the coating layer include, but are not limited to, a metal, an alloy, or a conductive compound. Examples of raw materials for the insulating coating layer include, but are not limited to, silicon oxide, aluminum oxide, zinc oxide, titanium oxide, zirconium oxide, aluminum nitride, silicon nitride, boron nitride, and diamond-like carbon. Examples of the conductive coating layer include, but are not limited to, titanium nitride, chromium nitride, indium tin oxide, and yttrium barium copper oxide. Examples of the target material 200 include, but are not limited to, silicon, aluminum, titanium, chromium, graphite, boron nitride, indium tin oxide, and yttrium barium copper oxide.

[0055] The sputtering coating apparatus 1 includes a reaction cavity 10, an electrode assembly 20, and a discharge coil assembly 30. The reaction cavity 10 has a reaction chamber 101 for providing a working space for sputtering coating. During sputtering coating, the target material 200 and the substrate 100 are accommodated in the reaction chamber 101, and the target material 200 is attached to the electrode assembly 20. The electrode assembly 20 and the discharge coil assembly 30 are installed in the reaction chamber 101 of the reaction cavity 10, facilitating sputtering coating by cooperative discharge between the electrode assembly 20 and the discharge coil assembly 30. Preferably, the reaction cavity 10 is a metal cavity, and therefore discharges in cooperation with the electrode assembly 20.

[0056] The reaction chamber 101 of the reaction cavity 10 is suitable for introducing reactive raw materials, plasma source gas, or other auxiliary raw materials such as inert gases required for coating. That is, during sputtering coating, the material constituting the target material 200 and the introduced reactive gas raw materials are co-deposited to form a film layer.

[0057] The electrode assembly 20 and the discharge coil assembly 30 of the sputtering coating apparatus 1 are electrically connectable to a radio frequency power supply 40 for providing operating radio frequency current to the electrode assembly 20 and the discharge coil assembly 30. In one embodiment of the present invention, the electrode assembly 20 and the discharge coil assembly 30 are commonly connected to one radio frequency power supply 40, i.e., the electrode assembly 20 and the discharge coil assembly 30 share a power supply or are connected in parallel and have the same operating potential. In another embodiment of the present invention, the electrode assembly 20 and the discharge coil assembly 30 can be electrically connected to two independent radio frequency power supplies 40, i.e., the electrode assembly 20 and the discharge coil assembly 30 can be independently controlled. When the electrode assembly 20 and the discharge coil assembly 30 are controlled independently, the electrode assembly 20 and the discharge coil assembly 30 can be controlled by power supplies of two different frequencies, for example, a high frequency of 13.56 MHz-60 MHz is applied to the discharge coil assembly 30, and a low frequency of 300 kHz-13.56 MHz is applied to the electrode assembly 20, thereby preventing mutual interference between the two power supplies. Preferably, the electrode assembly 20 and the discharge coil assembly 30 share a power supply. When the electrode assembly 20 and the discharge coil assembly 30 share a power supply, there is no need to control the issue of mutual synchronization between the power supplies, and mutual interference does not occur.

[0058] It is worth noting that the radio frequency power supply 40 may be a component included in the sputtering coating apparatus 1 or may be a separate device, such as a device that operates in cooperation with the sputtering coating apparatus 1, which is purchased directly; the present invention is not limited in this respect. The radio frequency power supply 40 and the sputtering coating apparatus 1 constitute a sputtering coating facility. The radio frequency power supply 40 may be directly attached to the sputtering coating apparatus 1 or may be disposed independently.

[0059] In one embodiment of the present invention, one end of the electrode assembly 20 and one end of the discharge coil assembly 30 are commonly connected to the output end of the radio frequency power supply 40, and the other end of the reaction cavity 10 and one end of the discharge coil assembly 30 are commonly connected to the ground end of the radio frequency power supply 40.

[0060] In one embodiment of the present invention, the sputtering coating apparatus 1 can be connected to a source supply device for transporting a reactive gas source or a plasma source into the reaction chamber 101 of the reaction cavity 10. The reaction cavity 10 can be connected to an air extraction device for extracting gas from the reaction chamber 101 of the reaction cavity 10 so as to maintain the reaction chamber 101 of the reaction cavity 10 within a preset air pressure range.

[0061] The electrode assembly 20 and the discharge coil assembly 30 cooperate to form a sputter coating assembly, which is disposed within the reaction chamber 101 and is adapted to be connected to the radio frequency power source 40 to perform sputter coating on the surface of the substrate.

[0062] The electrode assembly 20 includes a discharge electrode 21 and a dielectric layer 22 provided on the discharge electrode 21. The target material 200 is adapted to be connected to the dielectric layer 22. That is, the dielectric layer 22 is provided between the discharge electrode 21 and the target material 200, or the dielectric layer 22 separates the discharge electrode 21 and the target material 200. Furthermore, the dielectric layer 22 and the target material 200 are provided on the discharge side of the discharge electrode 21.

[0063] It is worth noting that if the target material 200 is a metal material and is placed directly on the discharge electrode 21, the target material 200 will be in electrical contact with the discharge electrode 21 and will not be an excited target material 200, but will instead be a part that directly discharges, preventing the sputtering process from proceeding. On the other hand, the provision of the dielectric layer 22 separates the metal or conductive target material 200 from the discharge electrode 21, so that although the target material 200 is close to the discharge electrode 21, it is not in direct electrical contact with the electrode, allowing the discharge electrode 21 to perform a better discharge function.

[0064] The dielectric layer 22 is used to prevent the formation of a conduction current between the plasma and the discharge electrode 21, generating a self-bias voltage on the surface of the target material 200 and achieving efficient sputtering. Taking into consideration pressure resistance, heat resistance, heat transfer, and electrostatic coupling efficiency, the material of the dielectric layer 22 may be one selected from aluminum oxide, zirconium oxide, boron nitride, quartz, mica, and polytetrafluoroethylene. Preferably, the thickness of the dielectric layer 22 is 0.2 to 2 mm. When the target material 200 is a conductive material, the dielectric layer 22 is essential. However, when the target material 200 is an insulating material, the target material 200 itself can also function as the dielectric layer 22, and the dielectric layer 22 may be unnecessary.

[0065] The target material 200 is replaceably attached to the dielectric layer 22, that is, different types of target material 200 can be replaced depending on the coating type requirements.

[0066] In one embodiment of the present invention, the discharge electrode 21 is a planar electrode, that is, the discharge electrode 21 has a planar structure, or the discharge region of the discharge electrode 21 is a planar position. Furthermore, the discharge electrode 21 forms a discharge region below the discharge electrode 21 that covers the target material 200 during operation.

[0067] In one embodiment of the present invention, the dielectric layer 22 is laminated on the discharge electrode 21, that is, the dielectric layer 22 is also a flat plate type material.

[0068] The target material 200 is a flat plate-shaped material and is stacked on the dielectric layer 22. That is, the discharge electrode 21, the dielectric layer 22, and the target material 200 are stacked in this order.

[0069] In one embodiment of the present invention, the discharge electrode 21, the dielectric layer 22, and the target material 200 are stacked and fixed by a fixing element, and the fixing method of the fixing element includes, for example, clamping fixing and extrusion fixing, but is not limited to these.

[0070] The discharge coil assembly 30 is provided in a region adjacent to the electrode assembly 20, so that the discharge regions of the electrode assembly 20 and the discharge coil assembly 30 can mutually reinforce each other due to their proximity. Preferably, in one embodiment of the present invention, the discharge coil assembly 30 is provided below the electrode assembly 20. In this configuration, the discharge regions of the discharge coil and the electrode assembly 20 overlap in the forward direction, which is advantageous for reinforcing the excitation effect on the target material 200. In another embodiment of the present invention, the discharge coil assembly 30 may be provided on the circumferential side of the electrode assembly 20, offset from each other or surrounding the bottom. Figures 2A and 2B are schematic diagrams showing the relative positions of the electrode assembly 20 and the discharge coil assembly 30 in different embodiments of the sputtering coating apparatus 1 according to the first embodiment of the present invention.

[0071] During coating, the substrate 100 is disposed below or near the discharge coil assembly 30. Furthermore, the substrate 100 is disposed in a discharge region where the electrode assembly 20 and the discharge coil assembly 30 act in cooperation, or in a region where the discharge region of the electrode assembly 20 and the discharge coil assembly 30 overlap, so that the radio frequency discharge action of the electrode assembly 20 and the discharge action of the discharge coil assembly 30 can act in cooperation on the target material 200, efficiently exciting atoms of the target material 200 and rapidly forming a high-density plasma, i.e., rapidly forming a film layer on the surface of the substrate 100.

[0072] The discharge coil assembly 30 includes a coil 31 and a spacing sleeve 32, and the coil 31 is spirally wound around the spacing sleeve 32. The spacing sleeve 32 is preferably made of an insulating material, such as a ceramic material. The spacing sleeve 32 restricts and separates the space inside and outside the spacing sleeve 32. The discharge coil assembly 30 is disposed substantially vertically below the discharge electrode 21. In other words, the central axis of the coil 31 is perpendicular to the electrode assembly 20.

[0073] In one embodiment of the present invention, the separation sleeve 32 has a first opening 3201, a second opening 3202, and a separation space 3203, the first opening 3201 and the second opening 3202 being located on opposite sides, and the separation space 3203 communicating with the outside through the first opening 3201 and the second opening 3202, respectively. The first opening 3201 and the electrode assembly 20 face each other, i.e., the discharge region of the electrode assembly 20 faces the inside of the separation space 3203. In other words, the separation sleeve 32 separates and confines the discharge region of the electrode assembly 20 within the separation space 3203.

[0074] The separation sleeve 32 provides a winding position for the coil 31 and also restrains the discharge area. Furthermore, within the separation space 3203, the discharge area of ​​the electrode assembly 20 and the discharge area of ​​the coil 31 overlap. In other words, during operation, both the discharge action of the electrode assembly 20 and the discharge action of the coil 31 occur within the separation space 3203.

[0075] The substrate 100 faces the second opening 3202, or the substrate 100 is provided near the second opening 3202. Furthermore, the substrate 100 is provided at a position below and near the second opening 3202.

[0076] In one embodiment of the present invention, the spacing sleeve 32 is a straight cylindrical member, and the electrode assembly 20, the target material 200, the spacing sleeve 32, and the coil 31 are arranged along the direction of gravity or vertically. The sputtering deposition region is located near the electrode and discharge coil, for example, above, below, vertically, diagonally above, or diagonally below.

[0077] In another embodiment of the present invention, the electrode assembly 20, the discharge coil assembly 30, and the substrate 100 may be offset from one another.

[0078] 2A and 2B are schematic diagrams illustrating different relative positions of the discharge coil assembly 30 and the target material 200 in the sputtering coating apparatus 1 according to the first embodiment of the present invention. In one example, referring to FIG. 1, the substrate 100 is disposed below the discharge coil, or the substrate 100 is disposed below the second opening 3202. Referring to FIG. 2A, at least two discharge coil assemblies 30 are disposed in staggered positions, such as circumferential positions or symmetrical distribution, below the electrode assembly 20. Referring to FIG. 2B, at least two discharge coil assemblies 30 are disposed below the electrode assembly 20. In another example, referring to FIG. 3A, the substrate 100 is disposed below the side of the discharge coil assembly 30. Referring to FIG. 3B, multiple substrates 100 surround the lower portion of the discharge coil assembly 30.

[0079] It is worth noting that FIGS. 1, 2A-2B, and 3A-3B respectively show the relative positional relationships of different embodiments of the discharge assembly, the discharge coil assembly 30, and the discharge coil assembly 30 and the target material 200; in other embodiments of the present invention, the relative positional relationships between the discharge electrode 21, the coil 31, and the target material 200 may be combinations of the above arrangements or other arrangements, and the present invention is not limited in this respect without departing from the basic interaction principles of the present invention.

[0080] In one embodiment of the present invention, the discharge electrode 21 and the coil 31 are connected to a water cooling device to prevent overheating of the discharge electrode 21 and the coil 31. A shielding layer is provided around the coil 31 to prevent discharge to the outside of the coil 31.

[0081] In one embodiment of the present invention, the overall assembly method of the sputtering coating apparatus 1 is as follows: The radio frequency power supply 40 is mounted outside the reaction cavity 10, and the discharge electrode 21, the dielectric layer 22, the target material 200, the coil 31, and the spacing sleeve 32 are all mounted inside the reaction cavity 10. The dielectric layer 22 and the target material 200 are mounted in this order below the discharge electrode 21. The spacing sleeve 32 is mounted below the target material 200, and the coil 31 is wound around the spacing sleeve 32. One ends of the electrode and the coil 31 are commonly connected to an output terminal of the radio frequency power supply 40 outside the reaction cavity 10. The other ends of the reaction cavity 10 and the coil 31 are commonly connected to the ground terminal of the radio frequency power supply 40. The substrate 100 is provided below the coil 31 and placed facing the target material 200 at a certain distance from the target material 200, and atoms of the target material 200 sputtered out are deposited on the surface of the substrate 100 to form a film.

[0082] In one embodiment of the present invention, the coating operation process of the sputtering coating apparatus 1 is as follows: During sputtering coating, the reaction cavity 10 is evacuated and filled with an inert gas and a reactive gas, and the radio frequency power supply 40 is turned on. On the one hand, the radio frequency current in the coil 31 generates high-density plasma by inductive discharge in the space close to the target material 200 inside the isolation sleeve 32. On the other hand, the radio frequency voltage at the electrode acts in cooperation with the plasma in the space close to the target material 200, generating a self-bias voltage on the surface of the target material 200, accelerating the bombardment of the target material 200 by the plasma ions, sputtering the atoms of the target material 200 and scattering them outward. The sputtered atoms of the target material 200 are deposited on the surface of the substrate 100 below to form a film.

[0083] FIG. 4 is a schematic diagram of a sputtering coating apparatus 1 according to a second embodiment of the present invention.

[0084] In this embodiment of the present invention, the electrode assembly 20 of the sputtering coating apparatus 1 has an inner space 201, and the discharge coil assembly 30 is disposed in the inner space 201. In other words, the electrode assembly 20 surrounds the exterior of the coil 31 assembly.

[0085] The electrode assembly 20 includes a discharge electrode 21 and a dielectric layer 22 provided on the discharge electrode 21. The target material 200 is adapted to be connected to the dielectric layer 22. That is, the dielectric layer 22 is provided between the discharge electrode 21 and the target material 200, or the dielectric layer 22 separates the discharge electrode 21 and the target material 200. Furthermore, the dielectric layer 22 and the target material 200 are provided on the discharge side of the discharge electrode 21.

[0086] Furthermore, the coil 31 is positioned inside the discharge electrode 21 , the target material 200 is positioned outside the discharge electrode 21 , and the substrate 100 is suitable to be provided in the space outside the target material 200 .

[0087] In one embodiment of the present invention, the coil 31 is a solenoid coil, and for example, the coil 31 as a whole is arranged approximately parallel to the discharge electrode 21, but is not limited to this. The coil 31 and the discharge electrode 21 are both arranged along the vertical direction, i.e., along the direction of gravity. In another embodiment of the present invention, the coil 31 is a solenoid coil, and the coil 31 as a whole is arranged approximately perpendicular to the discharge electrode 21, and for example, the discharge electrode 21 is arranged along the direction of gravity or the vertical direction, and the coil 31 is arranged along the horizontal direction, or the discharge electrode 21 is arranged along the horizontal direction, and the coil 31 is arranged along the direction of gravity or the vertical direction.

[0088] The discharge electrode 21 includes a plurality of plate units, which surround and separate the internal space 201. In one embodiment of the present invention, a gap is provided between two adjacent plate units, and the gap separates the two plate units to prevent the coil 31 from inducing eddy currents in the discharge electrode 21. In one embodiment of the present invention, the gap is filled with an insulating material to prevent the coil 31 from inducing eddy currents in the discharge electrode 21. The two adjacent plate units are electrically connected by a conductor.

[0089] Furthermore, the dielectric layer 22 surrounds the exterior of the discharge electrode 21. Accordingly, the dielectric layer 22 is laminated on the exterior of the discharge electrode 21 to form a continuous annular structure.

[0090] In one embodiment, the target material 200 is disposed in a continuous ring shape, i.e., the shape of the target material 200 substantially matches the shape of the dielectric layer 22. In another embodiment, the target material 200 is disposed to match the shape of the electrode plate unit, e.g., elongated, and is disposed outside the dielectric layer 22 at intervals.

[0091] In one embodiment of the present invention, the discharge electrode 21, the dielectric layer 22, and the target material 200 are joined together in order from the inside to the outside, and the coil 31 is attached to the inner space 201 of the electrode assembly 20, and the coil 31 is installed coaxially with the discharge electrode 21. The inner space 201 located inside the dielectric layer 22 is separated from the reaction chamber 101 of the reaction cavity 10.

[0092] In one embodiment of the present invention, the sputtering coating apparatus 1 includes a pair of sealing caps 23, each of which is sealed at both ends of the electrode assembly 20. Preferably, both ends of the dielectric layer 22 protrude from the discharge electrode 21, and the pair of sealing caps 23 are connected to both ends of the dielectric layer 22.

[0093] It is worth noting that the inner space 201 of the discharge electrode 21 is sealed and isolated from the reaction chamber 101, and therefore the inner space 201 can be filled with a heat dissipating material or a heat dissipating liquid to dissipate the heat generated during the operation of the coil 31. During the coating operation, the inner space of the dielectric layer 22 is isolated from the reaction chamber 101, and there is no need to evacuate the inner space 201, thereby preventing discharge within the coil 31. Meanwhile, a cooling airflow is circulated within the inner space of the dielectric layer 22 to cool the discharge electrode 21 and the coil 31 therein and prevent overheating.

[0094] When the target material 200 is a conductive material, the discharge electrode 21 may be composed of a plurality of separated electrode units, and an axially extending gap may be provided between two adjacent electrode units. When the target material 200 is an insulating material, the discharge electrode 21 may be cylindrical and surrounded by plate-shaped electrode units.

[0095] The substrate 100 is disposed outside the target material 200, i.e., the substrate 100 can be disposed around the entire circumference of the cylindrical electrode assembly, forming a large volume of coating space and facilitating coating of large amounts or large areas.

[0096] 5, in one embodiment of the present invention, the sputtering coating apparatus 1 includes a multi-layer stand 50 that surrounds the exterior of the electrode assembly 20. A plurality of the substrates 100 can be placed on the multi-layer stand 50. That is, coating can be performed at different heights in the surrounding space outside the electrode assembly 20.

[0097] In one embodiment of the present invention, the overall assembly method of the sputtering coating apparatus 1 is as follows: The radio frequency power supply 40 is mounted outside the reaction cavity 10, and the discharge electrode 21, the dielectric layer 22, the target material 200, the coil 31, and the isolation sleeve 32 are all mounted inside the reaction cavity 10. The electrode unit is configured as a plurality of column panels, and is cylindrically surrounded by a cylindrical wall, with axial gaps between the column panels or filled with insulating material, and the column panels are connected by conductive wires. The dielectric layer 22 is a complete cylinder. If the target material 200 is a conductive material, it is cylindrically surrounded by a plurality of column panels, with axial gaps between the column panels. If the target material 200 is an insulating material, it may be cylindrically surrounded by a plurality of column panels or may be a complete cylinder.

[0098] The discharge electrode 21, the dielectric layer 22, and the target material 200 are sequentially arranged from the inside out. The coil 31 is attached inside the discharge electrode 21 and is coaxial with the discharge electrode 21. The internal space of the dielectric layer 22 is separated from the reaction chamber 101 and is not evacuated. One end of the discharge electrode 21 and one end of the coil 31 are commonly connected to the output terminal of the radio frequency power supply 40 outside the reaction cavity 10, and the other end of the reaction cavity 10 and the coil 31 are commonly connected to the ground terminal of the radio frequency power supply 40. The substrate 100 is arranged outside the target material 200 and is placed facing the target material 200 at a certain distance from the target material 200. Atoms of the target material 200 sputtered and emitted are deposited on the surface of the substrate 100 to form a film.

[0099] In one embodiment of the present invention, the coating operation process of the sputtering coating apparatus 1 is as follows: During sputtering coating, the reaction cavity 10 is evacuated and filled with an inert gas and a reactive gas, and the radio frequency power supply 40 is turned on. On the one hand, the radio frequency current in the coil 31 generates high-density plasma by inductive discharge outside the target material 200. On the other hand, the radio frequency voltage at the discharge electrode 21 acts in cooperation with the plasma in the space near the target material 200, generating a self-bias voltage on the surface of the target material 200, accelerating the bombardment of the target material 200 by the plasma ions, sputtering the atoms of the target material 200 and scattering them outward. The sputtered atoms of the target material 200 are deposited on the surface of the substrate 100 to form a film.

[0100] FIG. 6 is a schematic diagram of a sputtering coating apparatus 1 according to a third embodiment of the present invention.

[0101] In this embodiment of the present invention, the difference from the first embodiment is that the sputtering coating apparatus 1 includes two sets of electrode assemblies 20 and discharge coil assemblies 30, which work in conjunction with each other to increase the overall coating area.

[0102] Furthermore, the two sets of electrode assemblies 20 and discharge coil assemblies 30 are arranged in parallel. That is, one end of each of the two sets of electrode assemblies 20 is commonly connected to the output terminal of the radio frequency power supply 40, one end of each of the two sets of discharge coil assemblies 30 is connected to the output terminal of the radio frequency power supply 40, the reaction cavity 10 is connected to the ground terminal of the radio frequency power supply 40, and the other ends of each of the two sets of discharge coil assemblies 30 are connected to the ground terminal of the radio frequency power supply 40.

[0103] Furthermore, the two target materials 200 of the two sets of electrode assemblies 20 are arranged in close proximity on the same plane, and the two coils 31 of the two discharge coil assemblies 30 are wound in opposite directions to reduce series inductance.

[0104] In this embodiment of the present invention, two sets of the electrode assemblies 20 and discharge coils in parallel are described as an example, and other embodiments of the present invention may include more sets of the electrode assemblies 20 and discharge coils, which are horizontally extended in a similar manner and two adjacent coils 31 are wound in opposite directions.

[0105] FIG. 7 is a schematic diagram of a sputtering coating apparatus 1 according to a fourth embodiment of the present invention.

[0106] This embodiment of the present invention differs from the first embodiment in that the dielectric layer 22 is not provided below the discharge electrode 21. In other words, the target material 200 is provided directly below the discharge electrode 21. This embodiment is suitable for insulating material coating.

[0107] The second embodiment above can also be modified in a similar manner, such that the dielectric layer 22 is not required and is used for an insulating material coating.

[0108] FIG. 8 is a schematic diagram of a sputtering coating apparatus 1 according to a fifth embodiment of the present invention.

[0109] In this embodiment of the present invention, the discharge coil assembly 30 includes a coil 31, which is a planar solenoid coil. The planar solenoid coil is directly mounted on one side of the discharge electrode 21. Furthermore, the coil 31 is detachably fixed to the non-discharge side of the discharge electrode 21. In other words, the target material 200 and the coil 31 are located on both sides of the discharge electrode 21, respectively.

[0110] Furthermore, the discharge electrode 21 includes a plurality of plate units, and the plate units are spaced apart. In one embodiment of the present invention, a gap is provided between two adjacent plate units, and the gap separates the two plate units to prevent the coil 31 from inducing eddy currents in the discharge electrode 21. In one embodiment of the present invention, the gap is filled with an insulating material to prevent the coil 31 from inducing eddy currents in the discharge electrode 21. The two adjacent plate units are electrically connected by a conductor.

[0111] It is worth noting that in this embodiment of the present invention, the discharge electrode 21, assembly 20 and the coil 31 are mounted integrally to form one whole movable assembly, facilitating mounting to different operating positions as a whole and avoiding additional mounting requirements for the coil 31.

[0112] The electrode assembly 20 and the coil 31 of the discharge coil assembly 30 cooperate to form a sputter coating assembly, which is disposed within the reaction chamber 101 and is adapted to be connected to the radio frequency power source 40 to perform sputter coating on the surface of the substrate.

[0113] As can be seen from the above examples, the technical solution of the present invention has many advantages over the prior art sputtering coating method, namely: Due to the operating principle, it is not necessary to form a magnetic field to increase the plasma density, and electron cyclotrons due to the presence of a magnetic field are avoided.

[0114] The discharge coil and the electrodes cooperate to form a high density plasma in the space adjacent to the target material, thereby rapidly forming a film layer.

[0115] The film layer can be formed of insulating or non-insulating material, which means there are few restrictions on the type of film layer material. Because it operates without the use of a magnetic field, spatial non-uniformities caused by a magnetically confined plasma are avoided, resulting in a more uniform film layer being formed.

[0116] The electrode, target material, and discharge coil mutually cover a large area, so that etching of the target material is uniform and utilization of the target material is high.

[0117] The electrode and target material are separated by a dielectric layer, allowing different types of target materials to be efficiently deposited on the surface of the substrate without the electrical performance of the target material affecting its deposition efficiency.

[0118] The coil discharge area is constrained by the isolation sleeve, and the electrode discharge area and the discharge coil discharge area are coupled in a forward direction before depositing directly onto the substrate surface.

[0119] In one embodiment, the sputtering deposition region is located below the electrode and discharge coil, and provides planar coating in the direction of gravity.

[0120] In one embodiment, the deposition region is located in the parallel region of the electrode and coil, facilitating multi-layer or batch coating around the target material.

[0121] In one embodiment, multiple sputter deposition zones are formed in parallel to facilitate large area or batch sputter deposition coatings.

[0122] Those skilled in the art should understand that the embodiments of the present invention described above and illustrated in the drawings are merely illustrative and are not intended to limit the present invention. The objects of the present invention have been fully and effectively achieved. The functions and structural principles of the present invention have been shown and explained in the examples, but various modifications and amendments can be made to the embodiments of the present invention without departing from the principles.

Claims

1. A sputtering coating apparatus for forming a film layer on a surface of a substrate by a sputtering coating method by impacting a target material, a reaction cavity having a reaction chamber; an electrode assembly; a discharge coil assembly; the electrode assembly and the discharge coil assembly are disposed in the reaction chamber, and during sputter coating, the substrate is accommodated in the reaction chamber, the target material is disposed on the electrode assembly, and the electrode assembly and the discharge coil assembly are electrically connected to a radio frequency power source, and the radio frequency power source provides an operating radio frequency current to the electrode assembly and the discharge coil assembly, thereby depositing and forming a film layer on the surface of the substrate; one end of the electrode assembly and one end of the discharge coil assembly are commonly connected to an output end of the radio frequency power supply, and the other end of the reaction cavity and one end of the discharge coil assembly are commonly connected to a ground end of the radio frequency power supply; The sputtering coating apparatus, characterized in that the electrode assembly includes a discharge electrode and a dielectric layer, the dielectric layer being provided between the discharge electrode and the target material.

2. A sputtering coating apparatus as described in claim 1, characterized in that the dielectric layer is laminated on the discharge side of the discharge electrode, and the target material is laminated on the dielectric layer.

3. 2. The sputter coating apparatus of claim 1, wherein said discharge coil assembly is located below said electrode assembly, and said substrate is adapted to be mounted below said discharge coil assembly.

4. 4. The sputtering coating apparatus according to claim 1, wherein the discharge coil assembly includes a coil and a spacing sleeve, the coil being wound around the spacing sleeve.

5. 5. The sputtering coating apparatus according to claim 4, wherein the isolation sleeve has a first opening, a second opening, and an isolation space, the isolation space communicates with the outside via the first opening and the second opening, the first opening is directed toward the target material, and the second opening is directed toward the substrate.

6. 4. The sputtering coating apparatus according to claim 1, wherein the central axis of said discharge coil assembly is perpendicular to said electrode assembly.

7. 4. The sputtering coating apparatus according to claim 1, wherein the electrode assembly, the discharge coil assembly, and the substrate are arranged along a vertical direction.

8. 4. The sputtering coating apparatus according to claim 1, wherein the discharge coil assembly includes a coil, the coil being a planar solenoid coil, and the coil is provided on one side of the electrode assembly.

9. 2. The sputter coating apparatus according to claim 1, wherein the electrode assembly has an internal space, and the discharge coil assembly is disposed in the internal space.

10. A sputtering coating apparatus as described in Claim 9, characterized in that the dielectric layer surrounds the outside of the discharge electrode and the target material is provided outside the dielectric layer.

11. 11. The sputter coating apparatus of claim 10, wherein the discharge coil assembly is disposed coaxially with the electrode assembly.

12. 11. The sputtering coating apparatus according to claim 10, wherein the discharge electrode includes a plurality of electrode units, the plurality of electrode units being arranged in a ring shape to form the internal space, and a gap being provided between two adjacent electrode units.

13. 13. The sputter coating apparatus of claim 12, wherein an insulating material is filled in the gap.

14. 11. The sputter coating apparatus of claim 10, wherein the dielectric layer has a continuous cylindrical structure.

15. A sputtering coating device for forming a film layer on a surface of a substrate by a sputtering coating method by impacting a target material, a reaction cavity having a reaction chamber; an electrode assembly; a discharge coil assembly; a radio frequency power source; the electrode assembly and the discharge coil assembly are disposed in the reaction chamber of the reaction cavity, the target material is disposed on the electrode assembly, and during sputter coating, the substrate is accommodated in the reaction chamber, the electrode assembly and the discharge coil assembly are electrically connected to the radio frequency power source, and the radio frequency power source provides an operating radio frequency current to the electrode assembly and the discharge coil assembly, thereby depositing and forming a film layer on the surface of the substrate; one end of the electrode assembly and one end of the discharge coil assembly are commonly connected to an output end of the radio frequency power supply, and the other end of the reaction cavity and one end of the discharge coil assembly are commonly connected to a ground end of the radio frequency power supply; The sputtering coating equipment, characterized in that the electrode assembly includes a discharge electrode and a dielectric layer, the dielectric layer being provided between the discharge electrode and the target material.

16. Sputtering coating equipment as described in Claim 15, characterized in that the dielectric layer is laminated on the discharge side of the discharge electrode, and the target material is laminated on the dielectric layer.

17. the discharge coil assembly includes a coil and a spacing sleeve, the coil being wound around the spacing sleeve; Alternatively, the sputtering coating equipment according to any one of claims 15 to 16, characterized in that the discharge coil assembly includes a coil, the coil being a planar solenoid coil, and the coil being provided on one side of the electrode assembly.

18. 16. The sputtering coating equipment according to claim 15, wherein the electrode assembly has an inner space, and the discharge coil assembly is disposed in the inner space.

19. A sputtering coating equipment as described in Claim 18, characterized in that the dielectric layer surrounds the outside of the discharge electrode, and the target material is provided outside the dielectric layer.

20. 1. A sputter coating discharge assembly adapted to be mounted within a reaction cavity and to sputter coat a substrate in said reaction cavity, comprising: an electrode assembly; a coil; During sputter coating, a target material is provided on the electrode assembly, the coil is provided near the target material, the electrode assembly and the coil are electrically connected to a radio frequency power source, and the radio frequency power source provides an operating radio frequency current to the electrode assembly and the coil, thereby depositing and forming a film layer on the surface of the substrate; one end of the electrode assembly and the coil is commonly connected to an output end of the radio frequency power supply, and the other end of the reaction cavity and the coil is commonly connected to a ground end of the radio frequency power supply; 10. A sputtering coating discharge assembly, comprising: an electrode assembly including a discharge electrode and a dielectric layer, the dielectric layer being disposed between the discharge electrode and the target material.

21. A sputtering coating discharge assembly as described in Claim 20, characterized in that the dielectric layer is laminated on the discharge side of the discharge electrode, and the target material is laminated on the dielectric layer.

22. 22. The sputter coating discharge assembly of claim 21, wherein the coil is a planar solenoid coil, and the coil is provided on one side of the discharge electrode.

Images