Semiconductor module, semiconductor device, and method of manufacturing the semiconductor device

Abstract

To suppress damage to an insulation sheet when a connection member is welded to a terminal of a semiconductor module.SOLUTION: A semiconductor module comprises a terminal lamination part 100A having an insulation sheet 130 extending in a first direction D1 and a first terminal 110 arranged on a first surface 131 of the insulation sheet. The first terminal 110 comprises a first region 111 having a first width W1 in a second direction D2 orthogonal to the first direction D1 in a plan view, a second region 112 extended from the first region 111 and having a second width W2 narrower than the first width W1 in the second direction D2 in the plan view, and a third region 113 separated from the insulation sheet 130 and electrically connected to the first region 111 and the second region 112. Welding a connection member 300 to the third region 113 of the first terminal 110 suppresses direct heat transfer of heat at the time of the welding to the insulation sheet 130, thereby suppressing damage to the insulation sheet 130, and suppressing a decrease in insulation performance and a decrease in resistance pressure caused thereby.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present invention relates to a semiconductor module, a semiconductor device, and a method for manufacturing a semiconductor device. [Background technology]

[0002] For example, a semiconductor module with a power conversion function has a built-in power device, such as an IGBT (Insulated Gate Bipolar Transistor), an FWD (Free Wheeling Diode), or a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). A capacitor may be connected to the semiconductor module to stabilize the applied DC voltage.

[0003] The terminals of a semiconductor module and a capacitor may be connected to each other by a connecting member. In this case, the connection is performed by, for example, screw fastening. However, a connection method using screws tends to increase the contact resistance at the joint between the connecting member and the terminal, and to cause significant deterioration over time. Therefore, a method of connecting the connecting member and the terminal by ultrasonic bonding has been proposed (see, for example, Patent Document 1). In ultrasonic bonding, ultrasonic vibrations are generated at the location to be joined while the connecting member is placed over the terminal. This vibration electrically and mechanically connects the connecting member and the terminal.

[0004] Meanwhile, laser welding is known as a method for joining connecting members and terminals without applying physical stress (see, for example, Patent Document 2). Laser welding involves irradiating overlapping metals with laser light, locally melting and solidifying the metals, thereby joining them. Laser welding involves locally concentrating laser energy to melt the metal in the direction of the laser light incidence, so if the amount of heat input to the metal is not properly controlled, the molten portion may penetrate the metal. Therefore, in the invention of Patent Document 2, a protective member with a higher melting point than the metals to be laser welded is placed on the side of the overlapping metals opposite the side on which the laser light is incident. The protective member prevents the molten portion from penetrating the metal.

[0005] Regarding a semiconductor module connected to a capacitor, a technology for providing a terminal portion as follows is also known. That is, a technology for providing a terminal stack portion as the terminal portion of a semiconductor module is known, in which a first power terminal, an insulating sheet, and a second power terminal are stacked in this order, with a portion of the first power terminal exposed from the insulating sheet and the second power terminal positioned on the insulating sheet with a terrace portion of the insulating sheet sandwiched between the portion and the exposed portion (see, for example, Patent Document 3). A first connecting terminal and a second connecting terminal of the capacitor are laser-welded to the first power terminal exposed from the insulating sheet and the second power terminal on the insulating sheet, respectively, of such a terminal stack portion.

[0006] Regarding laser welding, there is known a technique for providing a gap between an upper terminal and a lower terminal, which are internal wiring members of a semiconductor device, when the upper terminal and the lower terminal are laser-welded together (see, for example, Patent Document 4).

[0007] In addition, with regard to laser welding, a technology is known in which a spacer with an air gap hole is inserted between a lead frame, which is a lead material for internal wiring of a semiconductor device, and a heat spreader, which is its joining member, and laser light is irradiated at a position corresponding to the air gap hole to weld the lead frame and the heat spreader (see, for example, Patent Document 5).

[0008] Also, a technique is known in which an electric wiring board including a DC positive wiring board and a DC negative wiring board of a power module used in an inverter device of a power conversion device is fixed to a positive conductor plate and a negative conductor plate of a capacitor module of the power conversion device by laser welding or the like (see, for example, Patent Document 6).

[0009] Also, a technique is known in which a metal plate (electrode member) arranged on the main surface of a semiconductor element bonded to one conductive substrate (conductive member) is joined to a lead member (connection member) that provides electrical conductivity to another conductive substrate (conductive member) by laser welding (see, for example, Patent Document 7).

[0010] Also, a technique is known in which a first terminal portion and a second terminal portion of a semiconductor device, which are arranged with an insulating member sandwiched therebetween, and a first supply terminal and a second supply terminal of a bus bar, which are arranged with an insulating member sandwiched therebetween, are joined by laser welding so that the first supply terminal portion is electrically connected to the first terminal portion and the second supply terminal portion is electrically connected to the second terminal portion (see, for example, Patent Document 8).

[0011] Also known are techniques for laminating bus bars connected to the positive and negative electrodes of a capacitor via an insulating film (for example, Patent Document 9), and techniques for physically separating and overlapping the bus bars (for example, Patent Document 10). [Prior art documents] [Patent documents]

[0012] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-234694 [Patent Document 2] International Publication No. 2019 / 077866 Brochure [Patent Document 3] Patent Publication No. 2021-106235 [Patent Document 4] International Publication No. 2013 / 039099 Brochure [Patent Document 5] Japanese Patent Application Laid-Open No. 2008-66561 [Patent Document 6] Japanese Patent Application Laid-Open No. 2016-185067 [Patent Document 7] International Publication No. 2020 / 179369 Brochure [Patent Document 8] International Publication No. 2019 / 239771 Brochure [Patent Document 9] U.S. Patent No. 10,405,450 [Patent Document 10] U.S. Patent No. 10,374,521 Summary of the Invention [Problem to be solved by the invention]

[0013] However, when the terminal portion of a semiconductor module to which a capacitor is connected has a laminated structure in which an insulating sheet is sandwiched between positive and negative terminals, as in Patent Document 3, if a connecting member is placed on the terminal directly above the insulating sheet and laser welding is performed by irradiating a laser beam from the connecting member side, the heat generated during welding may damage the insulating sheet directly below the terminal. If the insulating sheet is damaged, it will no longer be able to maintain its original insulating performance, and the withstand voltage may decrease.

[0014] In one aspect, the present invention aims to suppress damage to an insulating sheet when a connecting member is welded to a terminal of a semiconductor module. [Means for solving the problem]

[0015] In one aspect, a semiconductor module is provided, comprising: an insulating sheet extending in a first direction; a first region disposed on a first surface of the insulating sheet and having a first width in a second direction perpendicular to the first direction in a planar view; a second region extending from the first region and having a second width narrower than the first width in the second direction in a planar view; and a third region spaced apart from the first surface and electrically connected to the first region and the second region.

[0016] In another aspect, there is provided a semiconductor device including the semiconductor module described above and a connection member welded to the third region of the semiconductor module.

[0017] In yet another aspect, there is provided a method for manufacturing a semiconductor device, comprising: a preparation step of preparing a semiconductor module including: an insulating sheet extending in a first direction; a first region disposed on a first surface of the insulating sheet and having a first width in a second direction perpendicular to the first direction in a planar view; a second region extending from the first region and having a second width narrower than the first width in the second direction in a planar view; and a third region spaced apart from the first surface and electrically connected to the first region and the second region; a preparation step of preparing a connecting member; and a welding step of welding the third region of the semiconductor module to the connecting member. [Effects of the Invention]

[0018] In one aspect, it is possible to suppress damage to the insulating sheet when welding the connection member to the terminal of the semiconductor module. [Brief explanation of the drawings]

[0019] [Figure 1] 1A and 1B are diagrams illustrating an example of a semiconductor module. [Figure 2] 10A and 10B are diagrams illustrating an example of a connection between a semiconductor module and a capacitor. [Figure 3] 10A and 10B are diagrams illustrating laser welding between a terminal of a semiconductor module and a connection member. [Figure 4] 2A to 2C are diagrams illustrating an example of a terminal stacking portion of the semiconductor module according to the first embodiment. [Figure 5] 3A and 3B are diagrams illustrating an example of a connection between a semiconductor module and a capacitor according to the first embodiment. [Figure 6] 10A and 10B are diagrams illustrating an example of a terminal stacking portion of a semiconductor module according to a second embodiment. [Figure 7]10A and 10B are diagrams illustrating an example of a terminal stacking portion of a semiconductor module according to a third embodiment. [Figure 8] 10A and 10B are diagrams illustrating an example of a terminal stacking portion of a semiconductor module according to a fourth embodiment. [Figure 9] 13A and 13B are diagrams illustrating an example of a terminal stacking portion of a semiconductor module according to a fifth embodiment. [Figure 10] 13A and 13B are diagrams illustrating an example of a terminal stacking portion of a semiconductor module according to a sixth embodiment. [Figure 11] 13A and 13B are diagrams illustrating an example of a terminal stacking portion of a semiconductor module according to a seventh embodiment. [Figure 12] 13A and 13B are diagrams (part 1) illustrating an example of a terminal stacking portion of a semiconductor module according to an eighth embodiment. [Figure 13] 13 is a diagram (part 2) illustrating an example of a terminal stacking portion of a semiconductor module according to the eighth embodiment. FIG. [Figure 14] 13A to 13C are diagrams illustrating a method for manufacturing a semiconductor device according to a ninth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0020] FIG. 1 is a diagram illustrating an example of a semiconductor module. FIG. 1(A) is a schematic plan view of a main part of an example of a semiconductor module. FIG. 1(B) is a schematic cross-sectional view of a main part of an example of a semiconductor module. FIG. 1(B) is a schematic cross-sectional view of II in FIG. 1(A). For convenience, the sealing resin shown in FIG. 1(B) is omitted in FIG. 1(A).

[0021] The semiconductor module 1a shown in FIGS. 1(A) and 1(B) includes a cooling body 10, a case 20, an insulating circuit board 30, and a semiconductor chip 40. The cooling body 10 is made of, for example, a metal plate such as a copper plate. A case 20 is disposed on the cooling body 10. The case 20 is made of, for example, a resin material such as polyphenylene sulfide resin, polybutylene terephthalate resin, polybutylene succinate resin, polyamide resin, or acrylonitrile butadiene styrene resin. Using such a resin material, the case 20 of the semiconductor module 1a is formed by, for example, injection molding. The case 20 has a frame-shaped outer peripheral wall 21. Terminals 22 are disposed on the outer peripheral wall 21 and are connected to the semiconductor chip 40 via wires 50. The case 20 is fixed to the cooling body 10 using an adhesive or the like.

[0022] A lid may be placed on case 20 to cover the internal space surrounded by outer wall 21. Cooling body 10 may be provided with cooling fins, and an air-cooled or liquid-cooled cooler may be connected to cooling body 10 directly or via a thermal interface material or the like.

[0023] The insulating circuit board 30 and the semiconductor chip 40 are housed in an internal space surrounded by the outer wall 21 of the case 20. The insulating circuit board 30 is a DCB (Direct Copper Bonding) board, in which predetermined patterns of conductor layers 32 and 33 made of copper or the like are provided on both sides of an insulating substrate 31 made of, for example, alumina, alumina-based composite ceramics, aluminum nitride, or silicon nitride. Other substrates, such as an AMB (Active Metal Brazed) board, may also be used for the insulating circuit board 30. The insulating circuit board 30 is housed in the case 20, with the conductor layer 32 on one side connected to the cooling body 10 via a thermally conductive material 60 such as a thermal interface material. The semiconductor chip 40 (two chips in this example) is mounted on the conductor layer 33 on the other side of the insulating circuit board 30 via a bonding material 70 such as a sintered member or solder. The semiconductor chip 40 is, for example, a semiconductor element such as an IGBT or a MOSFET. The semiconductor chip 40 has integrated thereon diode elements such as FWDs and SBDs (Schottky Barrier Diodes).

[0024] Each semiconductor chip 40 has a first load electrode (e.g., a positive electrode) provided on one main surface (the bottom surface in this example), and a second load electrode (e.g., a negative electrode) and a control electrode provided on the other main surface (the top surface in this example). For example, the first load electrode on the bottom surface functions as a collector electrode or a drain electrode, the second load electrode on the top surface functions as an emitter electrode or a source electrode, and the control electrode on the top surface functions as a base electrode or a gate electrode.

[0025] The first load electrodes on the underside of each semiconductor chip 40 are connected via bonding material 70 to different conductor layers 33 provided on the insulating circuit board 30. The second load electrode on the top surface of one semiconductor chip 40 (40x) is connected to the conductor layer 33 via a conductive member 80 such as a wire, clip, tab, or lead frame, and the first load electrode on the bottom surface of the other semiconductor chip 40 (40y) is connected to the conductor layer 33. The second load electrode and control electrode on the top surface of each semiconductor chip 40 are connected to terminals 22 of the case 20 via wires 50. The conductor layer 33 to which the first load electrode on the bottom surface of one semiconductor chip 40 (40x) is connected is connected to a first terminal 110 (e.g., a positive (P) terminal) via a conductive block 90 made of copper or the like provided on the conductor layer 33. The second load electrode on the top surface of the other semiconductor chip 40 (40y) is connected to another conductor layer 33 via a conductive member 80, and is connected to a second terminal 120 (e.g., a negative (N) terminal) via a conductive block 90 provided on the conductor layer 33. An output terminal 140 is connected to the conductor layer 33 to which the second load electrode on the top surface of one semiconductor chip 40 (40x) and the first load electrode on the bottom surface of the other semiconductor chip 40 (40y) are both connected. In this example, a pair of semiconductor chips 40 (40x, 40y) are connected in series within the case 20.

[0026] The semiconductor module 1a is an example of a 2-in-1 type semiconductor module that forms an inverter circuit. One (semiconductor chip 40x) of a set of semiconductor chips 40 housed in the case 20 forms an upper arm of one phase, and the other (semiconductor chip 40y) forms a lower arm of the same phase. For example, three groups of semiconductor modules 1a each including a set of semiconductor chips 40 connected in series are connected to each other in parallel. Connection nodes between the sets of serially connected semiconductor chips 40, which are connected to the output terminals 140 of each of the parallel-connected semiconductor modules 1a, correspond to output nodes for the U phase, V phase, and W phase, respectively, and are connected to a load such as a motor.

[0027] For ease of explanation, the semiconductor module 1a shown here includes one semiconductor chip 40 constituting an upper arm and one semiconductor chip 40 constituting a lower arm within one case 20. Alternatively, the semiconductor module 1a may include multiple semiconductor chips 40 connected in parallel to form an upper arm, or multiple semiconductor chips 40 connected in parallel to form a lower arm. Conductor layers 33 having a pattern corresponding to the number and layout of the semiconductor chips 40 to be mounted are formed on the insulating circuit board 30.

[0028] Sealing resin 150 is provided in the internal space surrounded by outer wall 21 of case 20. The insulating circuit board 30, semiconductor chip 40, wires 50, conductive member 80, conductive block 90, and the like housed within case 20 are sealed with sealing resin 150. Note that, for convenience, illustration of sealing resin 150 is omitted in FIG. 1A . For example, a resin material such as epoxy resin or phenolic resin, or a gel material such as silicone is used for sealing resin 150. Sealing resin 150 may contain an insulating filler such as silica. Multiple types of materials may be used for sealing resin 150. For example, a laminated structure may be used in which a gel material such as silicone is provided as a buffer coating material in a lower layer and a resin material such as epoxy resin is provided in an upper layer.

[0029] As described above, in the semiconductor module 1a, the insulating circuit board 30 and the semiconductor chip 40 housed in the case 20 are electrically connected to the first terminal 110 and the second terminal 120 which function as a P terminal and an N terminal. The first terminal 110 and the second terminal 120 are arranged so as to partially overlap each other in a plan view and a cross-sectional view, and the insulating sheet 130 is arranged between the first terminal 110 and the second terminal 120.

[0030] The first terminal 110 is connected to one of the conductive blocks 90 inside the case 20 and extends from the inside to the outside of the case 20. The second terminal 120 is connected to the other conductive block 90 inside the case 20 and extends from the inside to the outside of the case 20. The insulating sheet 130 is sandwiched between the first terminal 110 and the second terminal 120 and extends from the inside to the outside of the case 20. Outside the case 20, the tip of the insulating sheet 130 in the extension direction is located farther from the case 20 than the tip of the first terminal 110 in the extension direction that extends from the inside to the outside of the case 20. Outside the case 20, the tip of the second terminal 120 in the extension direction is located farther from the case 20 than the tip of the insulating sheet 130 in the extension direction that extends from the inside to the outside of the case 20.

[0031] In this way, first terminal 110, insulating sheet 130, and second terminal 120 are arranged in a stepped manner in their extension direction outside case 20. A terrace portion 133 of insulating sheet 130 is formed between the tip of first terminal 110 in the extension direction and the tip of insulating sheet 130 in the extension direction. The distance from the tip of first terminal 110 in the extension direction to the tip of insulating sheet 130 in the extension direction, i.e., the distance of terrace portion 133 therebetween, ensures an insulation distance between first terminal 110 and second terminal 120, which extends further outward than the tip of insulating sheet 130 in the extension direction. The semiconductor module 1a includes a terminal stack 100 having the first terminals 110, the insulating sheets 130, and the second terminals 120 stacked in this manner.

[0032] The semiconductor module 1a is connected to a capacitor, for example, in order to stabilize the applied DC voltage. 2A and 2B are diagrams illustrating an example of a connection between a semiconductor module and a capacitor. Fig. 2A is a perspective view of a main part of an example of a terminal stacking part of a semiconductor module. Fig. 2B is a cross-sectional view of a main part of an example of a connection part between a semiconductor module and a capacitor.

[0033] As shown in FIG. 2A, the semiconductor module 1a includes a terminal stack 100 extending outward from the case 20. As described above, the terminal stack 100 has a structure in which the insulating sheet 130 is disposed between the first terminal 110 and the second terminal 120, and the first terminal 110, the insulating sheet 130, and the second terminal 120 are arranged in a stepped manner in the direction extending from the case 20. For example, the first terminal 110 is a P terminal of the semiconductor module 1a, and the second terminal 120 is an N terminal of the semiconductor module 1a. The first terminal 110 and the second terminal 120 are made of a metal material such as copper. The surfaces of the first terminal 110 and the second terminal 120 may be plated with nickel or the like. The insulating sheet 130 is made of an insulating resin material such as aramid resin, polyamide resin, fluororesin, or polyimide resin.

[0034] As shown in FIG. 2B, the semiconductor module 1a is connected to a capacitor 200. The capacitor 200 includes a third terminal 230 and a fourth terminal 240 extending outward from its case 210, and an insulating sheet 250 disposed between the third terminal 230 and the fourth terminal 240. For example, the third terminal 230 is a P terminal of the capacitor 200, and the fourth terminal 240 is an N terminal of the capacitor 200. The third terminal 230 and the fourth terminal 240 are made of a metal material such as copper. The surfaces of the third terminal 230 and the fourth terminal 240 may be plated with nickel or the like. The insulating sheet 250 is made of an insulating resin material such as aramid resin, polyamide resin, fluororesin, or polyimide resin.

[0035] 2(B), third terminal 230 has one end disposed in case 210 and the other end bent. Fourth terminal 240 has one end disposed in case 210 and the other end bent in the opposite direction from third terminal 230. One end of insulating sheet 250 is disposed between third terminal 230 and fourth terminal 240 on case 210, and has flexibility that allows it to be bent toward fourth terminal 240. Insulating sheet 250 is sized to cover fourth terminal 240 when bent toward fourth terminal 240.

[0036] The second terminal 120 of the semiconductor module 1a is directly connected to the fourth terminal 240 of the capacitor 200, and the first terminal 110 of the semiconductor module 1a is connected to the third terminal 230 of the capacitor 200 via a flat connecting member 300. This electrically connects the semiconductor module 1a and the capacitor 200. When connecting the semiconductor module 1a and the capacitor 200, first the second terminal 120 and the fourth terminal 240 are connected, then the insulating sheet 250 is folded to cover these connection sites, and the connecting member 300 is placed on the first terminal 110 and the third terminal 230, and then the first terminal 110 and the third terminal 230 are connected to the connecting member 300. This allows the negative and positive conductors to be arranged in parallel between the semiconductor module 1a and the capacitor 200, with the insulating sheets 130 and 250 sandwiched between them, reducing the inductance of the connection portion.

[0037] The second terminal 120 of the semiconductor module 1a and the fourth terminal 240 of the capacitor 200 are connected by laser welding. The laser welding may be performed using a seam laser that continuously irradiates laser light, or a spot laser that irradiates pulsed laser light. The second terminal 120 and the fourth terminal 240 are electrically connected by being irradiated with laser light and melted and solidified together at the welded portion 2.

[0038] After the second terminal 120 of the semiconductor module 1a and the fourth terminal 240 of the capacitor 200 are connected, the insulating sheet 250 of the capacitor 200 is folded toward the welding portion 2 between the second terminal 120 and the fourth terminal 240. By folding the insulating sheet 250 in this manner, the fourth terminal 240 and the second terminal 120 connected thereto are covered with the insulating sheet 250.

[0039] After the insulating sheet 250 of the capacitor 200 is folded, the first terminal 110 of the semiconductor module 1a and the third terminal 230 of the capacitor 200 are connected using a connecting member 300. The connecting member 300 is made of a metal material such as copper. For example, a bus bar is used for the connecting member 300. The connecting member 300 is placed so as to straddle the insulating sheet 250 of the folded capacitor 200, and is connected to the first terminal 110 of the semiconductor module 1a and the third terminal 230 of the capacitor 200.

[0040] The first terminal 110 of the semiconductor module 1a and the third terminal 230 of the capacitor 200 are connected to the connection member 300 by, for example, laser welding. The laser welding may be performed using a seam laser or a spot laser. The third terminal 230 and the connection member 300 are conductively connected by being irradiated with laser light and melted and solidified together at the welding portion 3a. The first terminal 110 and the connection member 300 are conductively connected by being irradiated with laser light and melted and solidified together at the welding portion 4a. For example, the semiconductor module 1a and the capacitor 200 are connected using the connecting member 300 in this manner, thereby obtaining a semiconductor device 5a as shown in FIG. 2(B).

[0041] Here, laser welding between the first terminal 110 of the semiconductor module 1a and the connection member 300 will be described. 3A to 3C are diagrams illustrating laser welding between the terminals of the semiconductor module and the connection member, each of which schematically shows a cross-sectional view of a main part of an example of the laser welding process.

[0042] 3(A) to 3(C) illustrate, for convenience, the insulating sheet 130 and the first terminal 110 in the terminal stack portion 100 of the semiconductor module 1a, and the connecting member 300. When laser welding the first terminal 110 and the connecting member 300, for example, first, as shown in FIG. 3(A), the connecting member 300 is placed on the first terminal 110. Then, as shown in FIG. 3(B), laser light 400 is irradiated from the connecting member 300 side, and the connecting member 300 and the underlying first terminal 110 are melted, solidified, and welded at the welding portion 4a.

[0043] However, during such laser welding, excessive heating caused by irradiation with laser light 400 can cause excessive melting of the connecting member 300 and the first terminal 110, which can cause thermal stress on the insulating sheet 130, resulting in damage 410 to the insulating sheet 130, as shown in FIG. 3(C). If the first terminal 110 melts excessively, the welded portion 4a can penetrate the first terminal 110 and reach the insulating sheet 130, causing damage 410 to the insulating sheet 130. If damage 410 occurs in the insulating sheet 130, the properties of the material at or near the damaged portion 410 can change, which can cause the insulating sheet 130 to lose its original insulating performance and reduce its withstand voltage. In view of the above, the following configuration is adopted as an embodiment to prevent damage to the insulating sheet when the connecting member is welded to the terminal of the semiconductor module.

[0044] [First embodiment] 4A and 4B are diagrams illustrating an example of a terminal stacking portion of a semiconductor module according to a first embodiment. Fig. 4A is a schematic perspective view of a main portion of an example of the terminal stacking portion of a semiconductor module. Fig. 4B is a schematic plan view of a main portion of an example of a first terminal of the terminal stacking portion of a semiconductor module. Fig. 4C is a schematic plan view of a main portion of an example of a connecting member to be welded to the first terminal of the terminal stacking portion of a semiconductor module.

[0045] The terminal laminate 100A shown in FIG. 4A includes a first terminal 110, a second terminal 120, and an insulating sheet 130. The insulating sheet 130 is disposed between the first terminal 110 and the second terminal 120. The first terminal 110 is disposed on a first surface 131 of the insulating sheet 130, and the second terminal 120 is disposed on a second surface 132 opposite the first surface 131 of the insulating sheet 130. The first terminal 110 and the second terminal 120 are disposed so as to partially overlap with each other via the insulating sheet 130, i.e., so as to partially overlap in a planar view. As shown in FIG. 5 (described later), the first terminal 110, the second terminal 120, and the insulating sheet 130 are disposed so as to extend outward from the case 20 of the semiconductor module 1. The first terminal 110, the insulating sheet 130, and the second terminal 120 are disposed so as to form a staircase shape in a first direction D1 (the direction in which they extend outward from the case 20). Terrace portion 133 of insulating sheet 130 ensures an insulating distance between first terminal 110 and second terminal 120.

[0046] The first terminal 110 of the terminal laminate 100A has a first region 111, a second region 112, and a third region as shown in FIGS. 4A and 4B. The first region 111 is disposed on a first surface 131 of an insulating sheet 130 extending in a first direction D1 and has a first width W1 in a second direction D2 perpendicular to the first direction D1 in a plan view. The second region 112 extends from the first region 111 and has a second width W2 in the second direction D2 in a plan view that is narrower than the first width W1. The second region 112 extends from the first region 111 toward a third direction D3 that is perpendicular to the first surface 131 of the insulating sheet 130 and spaced apart from the first surface 131. The third region 113 is spaced apart from the first surface 131 of the insulating sheet 130 and is electrically connected to the first region 111 and the second region 112.

[0047] In the terminal laminated portion 100A, a surface 111a (upper surface) of the first region 111 opposite the insulating sheet 130 is located closer to the insulating sheet 130 in the third direction D3 than a surface 113a (lower surface) of the third region 113 facing the insulating sheet 130. In the terminal laminated portion 100A, the third region 113 of the first terminal 110 is disposed outside the first region 111 in a planar view. That is, the third region 113 is disposed so as not to overlap with the first region 111 in a planar view.

[0048] In the first terminal 110 of the terminal laminate 100A, the first region 111 includes a wide portion 111b having a first width W1 in the second direction D2 and a narrow portion 111c extending from the wide portion 111b in the first direction D1 and having a third width W3 in the second direction D2 that is narrower than the first width W1. The narrow portions 111c are arranged in pairs, and the pair of narrow portions 111c are arranged spaced apart from each other on both side ends of the wide portion 111b in the second direction D2. The second region 112 extends from an edge of the wide portion 111b between the pair of narrow portions 111c on the first direction D1 side of the first region 111, and a third region 113 extends from the extended second region 112 in the first direction D1 so as not to overlap with the first region 111 in a plan view.

[0049] Furthermore, the first terminal 110 of the terminal stack 100A can be formed by forming two notches extending in the first direction D1 by punching or the like on the edge portion on the first direction D1 side of the flat terminal member, bending the intermediate portion between the two notches once in the third direction D3, and bending the tip portion of the bent portion in the first direction D1 (the side that does not overlap with the flat terminal member in a planar view).

[0050] In this way, in the first terminal 110 of the terminal laminate 100A, a pair of narrow portions 111c extend in the first direction D1 from the wide portion 111b of the first region 111, and the second region 112 extends from an edge of the wide portion 111b on the first direction D1 side (between the pair of narrow portions 111c) toward the third direction D3. Then, with respect to the insulating sheet 130, the third region 113 extends from the second region 112 in the first direction D1 to a position higher than the wide portion 111b and the narrow portion 111c of the first region 111 via the second region 112 so as not to overlap with the first region 111 in a plan view.

[0051] 4(C), a connecting member 300 such as a bus bar, which is connected to, for example, a capacitor, is welded to the first terminal 110 of the terminal laminate 100A. An end of the connecting member 300 is inserted between the narrow portion 111c of the first region 111 of the first terminal 110 and the third region 113. Then, a laser beam is irradiated from the third region 113 side, and the third region 113 and the connecting member 300 are welded to each other at the welding portion 4.

[0052] 5A and 5B are diagrams illustrating an example of a connection between a semiconductor module and a capacitor according to the first embodiment. Fig. 5A is a schematic cross-sectional view of a main part of an example of a connection between a semiconductor module and a capacitor. Fig. 5B is a schematic cross-sectional view of a main part of an example of a laser welding process between a first terminal of a terminal stacking portion of a semiconductor module and a connecting member. Fig. 5C is a schematic perspective view of a main part of an example of a connection state between a first terminal of a terminal stacking portion of a semiconductor module and a connecting member.

[0053] 5(A), the terminal stacking portion 100A of the semiconductor module 1 extends in a first direction D1 and is disposed so as to extend outward from the case 20. For example, the first terminal 110 is a P terminal, and the second terminal 120 is an N terminal. An insulating sheet 130 is disposed between the first terminal 110 and the second terminal 120.

[0054] Capacitor 200 connected to semiconductor module 1 includes third terminal 230 and fourth terminal 240 extending outward from its case 210, and insulating sheet 250 disposed therebetween. For example, third terminal 230 is a P terminal, and fourth terminal 240 is an N terminal. Flexible insulating sheet 250 is disposed between third terminal 230 and fourth terminal 240.

[0055] When connecting the semiconductor module 1 and the capacitor 200, first, the fourth terminal 240 of the capacitor 200 is placed on the second terminal 120 of the terminal stacking portion 100A of the semiconductor module 1, and laser light is applied from the side of the fourth terminal 240 to weld the fourth terminal 240 and the second terminal 120 at the welding portion 2. Next, the insulating sheet 250 of the capacitor 200 is folded, and the fourth terminal 240 and the welding portion 2 between it and the second terminal 120 are covered with the insulating sheet 250.

[0056] Thereafter, one end of the connection member 300 is inserted between the narrow portion 111c (its surface 111a) of the first region 111 in the first terminal 110 of the terminal stacking unit 100A of the semiconductor module 1 and the third region 113 (its surface 113a), and the other end of the connection member 300 is placed on the third terminal 230 of the capacitor 200. Note that if the tip of the narrow portion 111c of the first region 111 in the first terminal 110 is shaped to protrude further in the extension direction than the tip of the third region 113 in the extension direction, it becomes easier to insert the connection member 300 between the narrow portion 111c and the third region 113 without hitting the insulating sheet 130.

[0057] After the connection member 300 is placed, a laser beam is irradiated from the connection member 300 side onto an end of the connection member 300 placed on the third terminal 230, and the connection member 300 and the third terminal 230 are welded together at a welding portion 3. Furthermore, a laser beam is irradiated from the third region 113 side onto a third region 113, where the end of the connection member 300 is inserted between the first region 111 of the first terminal 110 of the terminal stack 100A and the third region 113 of the first terminal 110, and the connection member 300 is welded together at a welding portion 4. Note that welding at the welding portion 4 may be performed after welding at the welding portion 3, or welding at the welding portion 3 may be performed after welding at the welding portion 4. For example, the semiconductor module 1 having the terminal stack portion 100A in this manner and the capacitor 200 are connected using the connection member 300, thereby obtaining a semiconductor device 5 as shown in FIG. 5(A).

[0058] 5(B) and 5(C), when welding the third region 113 of the first terminal 110 of the terminal laminate 100A to the connection member 300, the third region 113 and the underlying connection member 300 are melted by irradiating the third region 113 with laser light 400 from the third region 113 side. Then, the melted portion solidifies, and the third region 113 and the connection member 300 are welded at the welded portion 4.

[0059] During this laser welding, the third region 113 of the first terminal 110 is raised from the first region 111 on the insulating sheet 130 via the second region 112 to a position spaced apart from the insulating sheet 130. The connecting member 300 is inserted between the raised third region 113 and the narrow portion 111c of the first region 111, and the third region 113 and the connecting member 300 are welded together. A space 420, at least the thickness of which is equal to the thickness of the first region 111, exists between the connecting member 300 welded to the third region 113 and the insulating sheet 130. Therefore, heat generated in the connecting member 300 when the laser beam 400 is irradiated from the third region 113 side is insulated by the space 420, and is prevented from being directly transferred to the insulating sheet 130. This prevents the insulating sheet 130 from being damaged by the heat generated during welding. By preventing damage to the insulating sheet 130, the properties of the material are prevented from changing, and the insulating performance is prevented from decreasing, which in turn prevents the breakdown voltage from decreasing.

[0060] [Second embodiment] 6A and 6B are diagrams illustrating an example of a terminal stacking portion of a semiconductor module according to a second embodiment. Fig. 6A is a schematic perspective view of a main portion of an example of the terminal stacking portion of a semiconductor module. Fig. 6B is a schematic plan view of a main portion of an example of a first terminal of the terminal stacking portion of a semiconductor module. Fig. 6C is a schematic plan view of a main portion of an example of a connecting member to be welded to the first terminal of the terminal stacking portion of a semiconductor module.

[0061] A terminal laminate 100B according to the second embodiment includes a first terminal 110 having a first region 111, a second region 112, and a third region 113, as shown in FIGS. 6A and 6B. In the first terminal 110 of the terminal laminate 100B, the first region 111 is disposed on a first surface 131 of an insulating sheet 130 extending in a first direction D1, and has a first width W1 in a second direction D2 perpendicular to the first direction D1 in a plan view. The second region 112 extends from the first region 111 and has a second width W2 in the second direction D2 in a plan view that is narrower than the first width W1. The second region 112 extends from the first region 111 toward a third direction D3 that is perpendicular to the first surface 131 of the insulating sheet 130 and away from the first surface 131. The third region 113 is electrically connected to the first region 111 and the second region 112 while being spaced apart from the first surface 131 of the insulating sheet .

[0062] In the terminal laminated portion 100B, in the third direction D3, a surface 111a (upper surface) of the first region 111 opposite the insulating sheet 130 is located closer to the insulating sheet 130 than a surface 113a (lower surface) of the third region 113 facing the insulating sheet 130. In the terminal laminated portion 100B, the third region 113 of the first terminal 110 is disposed so as to overlap the first region 111 in a plan view.

[0063] Furthermore, the first terminal 110 of the terminal stack 100B can be formed by forming a protruding portion that protrudes in the first direction D1 on a flat terminal member by punching or the like, bending the protruding portion once in the third direction D3, and bending the bent tip portion in the first direction D1 (the side that overlaps with the flat terminal member in a planar view).

[0064] In this way, in the first terminal 110 of the terminal laminate 100B, the second region 112 extends from the edge (the center) of the first region 111 on the first direction D1 side toward the third direction D3 side. Then, with respect to the insulating sheet 130, the third region 113 extends from the second region 112 in the first direction D1 to a position higher than the first region 111 via the second region 112 so as to overlap with the first region 111 in a plan view.

[0065] 6(C) is welded to the first terminal 110 of the terminal laminate 100B. The connection member 300 welded to the first terminal 110 of the terminal laminate 100B has a through portion 310 (opening) of a planar size that allows the third region 113 and the second region 112 of the first terminal 110 to pass through.

[0066] When welding the first terminal 110 of the terminal laminate 100B as shown in FIGS. 6(A) and 6(B) to the connecting member 300 as shown in FIG. 6(C), the connecting member 300 is first placed on the first terminal 110 so that the third region 113 and the second region 112 thereof are inserted into the through-hole 310 of the connecting member 300. Next, the connecting member 300 is slid in the first direction D1 so that the end 320 of the connecting member 300 is sandwiched between the third region 113 and the first region 111 of the first terminal 110. As a result, the end 320 of the connecting member 300 is inserted between the first region 111 and the third region 113 of the first terminal 110. The second region 112 penetrates between the upper and lower surfaces of the connecting member 300 at the through-hole 310. After the connection member 300 is placed, a laser beam is irradiated from the third region 113 side of the first terminal 110, and the third region 113 and the underlying connection member 300 are melted. Then, the melted portion is solidified, and the third region 113 and the connection member 300 are welded to each other at the welding portion 4.

[0067] During this laser welding, the third region 113 of the first terminal 110 is raised from the first region 111 on the insulating sheet 130 via the second region 112 to a position spaced apart from the insulating sheet 130. The end 320 of the connecting member 300 is inserted between the raised third region 113 and the first region 111 below it, and the third region 113 and the connecting member 300 are welded together. The heat generated in the connecting member 300 when the laser beam is irradiated from the third region 113 side is prevented from being directly transferred to the insulating sheet 130 because the connecting member 300 is located spaced apart from the insulating sheet 130 and the first region 111 is also present below the connecting member 300. This prevents the insulating sheet 130 from being damaged by the heat during welding. By preventing damage to the insulating sheet 130, changes in the material properties are prevented, and a decrease in insulation performance and a decrease in withstand voltage are prevented.

[0068] [Third embodiment] 7A and 7B are diagrams illustrating an example of a terminal stacking portion of a semiconductor module according to a third embodiment. Fig. 7A is a schematic perspective view of a main portion of an example of the terminal stacking portion of a semiconductor module. Fig. 7B is a schematic plan view of a main portion of an example of a first terminal of the terminal stacking portion of a semiconductor module. Fig. 7C is a schematic plan view of a main portion of an example of a connecting member to be welded to the first terminal of the terminal stacking portion of a semiconductor module.

[0069] A terminal laminate 100C according to the third embodiment includes a first terminal 110 having a first region 111, a second region 112, and a third region 113, as shown in FIGS. 7A and 7B. In the first terminal 110 of the terminal laminate 100C, the first region 111 is disposed on a first surface 131 of an insulating sheet 130 extending in a first direction D1 and has a first width W1 in a second direction D2 perpendicular to the first direction D1 in a plan view. The second region 112 extends from the first region 111 and has a second width W2 in the second direction D2 in a plan view that is narrower than the first width W1. The second region 112 extends from the first region 111 toward a third direction D3 that is perpendicular to the first surface 131 of the insulating sheet 130 and away from the first surface 131. The third region 113 is electrically connected to the first region 111 and the second region 112 while being spaced apart from the first surface 131 of the insulating sheet .

[0070] In the terminal laminated portion 100C, a surface 111a (upper surface) of the first region 111 opposite the insulating sheet 130 is located closer to the insulating sheet 130 in the third direction D3 than a surface 113a (lower surface) of the third region 113 facing the insulating sheet 130. In the terminal laminated portion 100C, the third region 113 of the first terminal 110 is disposed so as to overlap with the first region 111 in a plan view.

[0071] In the first terminal 110 of the terminal laminate 100C, a pair of second regions 112 are arranged, and the pair of second regions 112 are arranged spaced apart from each other on both end portions in the second direction D2 of the first region 111. The third region 113 is connected to the pair of second regions 112.

[0072] Furthermore, the first terminal 110 of the terminal stack 100C can be formed by forming an opening in a flat terminal member by punching or the like, bending the member once in the third direction D3 at the position of the opening, and then bending the bent tip portion in the first direction D1 (the side that overlaps with the flat terminal member in a planar view).

[0073] In this way, in the first terminal 110 of the terminal laminate 100C, the pair of second regions 112 extend from the edges (both side ends) of the first region 111 on the first direction D1 side toward the third direction D3 side. Then, with respect to the insulating sheet 130, the third region 113 extends from the pair of second regions 112 in the first direction D1 to a position higher than the first region 111 via the pair of second regions 112 so as to overlap with the first region 111 in a plan view.

[0074] 7(C), a connecting member 300 such as a bus bar is welded to the first terminal 110 of the terminal laminate 100C. The connecting member 300 welded to the first terminal 110 of the terminal laminate 100C has a protruding portion 330 of a planar size that can be inserted into the gap (opening) between the pair of second regions 112.

[0075] When welding the first terminal 110 of the terminal laminate 100C shown in FIGS. 7(A) and 7(B) to the connecting member 300 shown in FIG. 7(C), the connecting member 300 is first placed on the first terminal 110 so that the protruding portion 330 of the connecting member 300 is inserted into the gap between the pair of second regions 112. As a result, the protruding portion 330 of the connecting member 300 is inserted between the first region 111 and the third region 113 of the first terminal 110. The notches 331 that sandwich the protruding portion 330 of the connecting member 300 can also be considered as penetration portions through which the second region 112 penetrates between the upper and lower surfaces of the connecting member 300. After the connecting member 300 is placed, a laser beam is irradiated from the third region 113 side of the first terminal 110, and the third region 113 and the connecting member 300 below it are melted. Then, the molten portion solidifies, and the third region 113 and the connection member 300 are welded to each other at the welding portion 4.

[0076] During this laser welding, the third region 113 of the first terminal 110 is raised from the first region 111 on the insulating sheet 130 via the second region 112 to a position spaced apart from the insulating sheet 130. The protruding portion 330 of the connecting member 300 is inserted between the raised third region 113 and the first region 111 below it, and the third region 113 and the connecting member 300 are welded together. The heat generated in the connecting member 300 by irradiating the laser beam from the third region 113 side is prevented from being directly transferred to the insulating sheet 130 because the connecting member 300 is located spaced apart from the insulating sheet 130 and the first region 111 is also present below the connecting member 300. This prevents the insulating sheet 130 from being damaged by the heat during welding. By preventing damage to the insulating sheet 130, changes in the material properties are prevented, and a decrease in insulation performance and a decrease in withstand voltage are prevented.

[0077] Furthermore, the connecting member 300 to be welded to the first terminal 110 of the terminal stack 100C is not limited to the one shown in Figure 7(C), but it is also possible to use one having a constant width that can be inserted into the gap between a pair of second regions 112, i.e., a constant width corresponding to the width of the above-mentioned protrusion 330.

[0078] [Fourth embodiment] 8A and 8B are diagrams illustrating an example of a terminal stacking portion of a semiconductor module according to a fourth embodiment. Fig. 8A is a schematic perspective view of a main portion of an example of the terminal stacking portion of a semiconductor module. Fig. 8B is a schematic plan view of a main portion of an example of a first terminal of the terminal stacking portion of a semiconductor module. Fig. 8C is a schematic plan view of a main portion of an example of a connecting member to be welded to the first terminal of the terminal stacking portion of a semiconductor module.

[0079] A terminal laminate 100D according to the fourth embodiment includes a first terminal 110 having a first region 111, a second region 112, and a third region 113, as shown in FIGS. 8A and 8B. In the first terminal 110 of the terminal laminate 100D, the first region 111 is disposed on a first surface 131 of an insulating sheet 130 extending in a first direction D1, and has a first width W1 in a second direction D2 perpendicular to the first direction D1 in a plan view. The second region 112 extends from the first region 111 and has a second width W2 in the second direction D2 in a plan view that is narrower than the first width W1. The second region 112 extends from the first region 111 toward a third direction D3 that is perpendicular to the first surface 131 of the insulating sheet 130 and away from the first surface 131. The third region 113 is electrically connected to the first region 111 and the second region 112 while being spaced apart from the first surface 131 of the insulating sheet .

[0080] In the terminal laminated portion 100D, a surface 111a (upper surface) of the first region 111 opposite the insulating sheet 130 is located closer to the insulating sheet 130 in the third direction D3 than a surface 113a (lower surface) of the third region 113 facing the insulating sheet 130. In the terminal laminated portion 100D, the third region 113 of the first terminal 110 is disposed outside the first region 111 in a planar view. That is, the third region 113 is disposed so as not to overlap with the first region 111 in a planar view.

[0081] In the first terminal 110 of the terminal laminate 100D, the first region 111 includes a wide portion 111b having a first width W1 in the second direction D2 and a narrow portion 111c extending from the wide portion 111b in the first direction D1 and having a third width W3 in the second direction D2 that is narrower than the first width W1. The narrow portions 111c are arranged in pair, and the pair of narrow portions 111c are arranged spaced apart from each other on both side ends of the wide portion 111b in the second direction D2. The second regions 112 extend from the edges of the pair of narrow portions 111c on the second direction D2 side of the first region 111, and third regions 113 extend in the second direction D2 from the pair of extended second regions 112, respectively, so as not to overlap with the first region 111 in a plan view.

[0082] Furthermore, the first terminal 110 of the terminal stack 100D can be formed by forming, by punching or the like, one notch extending in the first direction D1 and another notch extending in the second direction D2 and communicating with the first notch at the center, i.e., a T-shaped notch in a planar view, on the edge portion on the first direction D1 side of the flat terminal member, and folding each of both side portions of the T-shaped notch once in the third direction D3, and folding the folded tip portion in the second direction D2 (the side that does not overlap with the flat terminal member in a planar view).

[0083] In this way, in the first terminal 110 of the terminal laminate 100D, a pair of narrow portions 111c extend in the first direction D1 from the wide portion 111b of the first region 111, and the second regions 112 extend from the edges of the pair of narrow portions 111c on the second direction D2 side toward the third direction D3. Then, with respect to the insulating sheet 130, the third regions 113 extend in the second direction D2 from the pair of second regions 112 to positions higher than the wide portions 111b and narrow portions 111c of the first region 111 via the second regions 112 so as not to overlap with the first regions 111 in a plan view.

[0084] 8(C) is welded to the first terminals 110 of the terminal laminate 100D. The connection member 300 welded to the first terminals 110 of the terminal laminate 100D has a pair of through-holes 340 (cutouts) of a planar size into which the pair of second regions 112 extending from the pair of narrow width portions 111c of the first terminals 110 are inserted, respectively.

[0085] When welding the first terminal 110 of the terminal laminate 100D shown in FIGS. 8A and 8B to the connection member 300 shown in FIG. 8C, the connection member 300 is first placed on the first terminal 110 so that the pair of second regions 112 are inserted into the pair of through-holes 340 of the connection member 300. As a result, the portion of the connection member 300 sandwiched between the pair of through-holes 340 is inserted between the third region 113 of the first terminal 110 and the insulating sheet 130. At this time, the portion of the connection member 300 outside the pair of through-holes 340 is positioned above the narrow portion 111c of the first region 111. The second region 112 penetrates between the upper and lower surfaces of the connection member 300 at the through-holes 340. After the connection member 300 is placed, a laser beam is irradiated from the third region 113 side of the first terminal 110, melting the third region 113 and the connection member 300 below it. Then, the molten portion solidifies, and the third region 113 and the connection member 300 are welded to each other at the welding portion 4.

[0086] During this laser welding, the third region 113 of the first terminal 110 is raised from the first region 111 on the insulating sheet 130 via the second region 112 to a position spaced apart from the insulating sheet 130. The connecting member 300 is inserted between the raised third region 113 and the insulating sheet 130, and the third region 113 and the connecting member 300 are welded together. A space exists between the connecting member 300 welded to the third region 113 and the insulating sheet 130. Therefore, heat generated in the connecting member 300 when irradiated with laser light from the third region 113 side is insulated by the space and is prevented from being directly transferred to the insulating sheet 130. This prevents damage to the insulating sheet 130 due to heat generated during welding. By preventing damage to the insulating sheet 130, changes in the material properties are prevented, and a decrease in insulating performance and a decrease in withstand voltage are prevented.

[0087] 8(C) is used as the connecting member 300 to be welded to the first terminal 110 of the terminal laminate 100D, when the portion sandwiched between the pair of through-holes 340 is inserted between the third region 113 and the insulating sheet 130, the portion outside the pair of through-holes 340 is positioned above the narrow portion 111c of the first region 111. This makes it easier to insert the connecting member 300 without it colliding with the insulating sheet 130.

[0088] If there is no or low possibility of collision with the insulating sheet 130 when inserting the connecting member 300, the connecting member 300 to be welded to the first terminal 110 of the terminal stack 100D may be one that does not have a portion that will be positioned above the narrow portion 111c of the first region 111, i.e., one as shown in Figure 7(C) above, or one that has a certain width that can be inserted into the gap between a pair of second regions 112.

[0089] [Fifth embodiment] 9A and 9B are diagrams illustrating an example of a terminal stacking portion of a semiconductor module according to a fifth embodiment. Fig. 9A is a schematic perspective view of a main portion of an example of the terminal stacking portion of a semiconductor module. Fig. 9B is a schematic plan view of a main portion of an example of a first terminal of the terminal stacking portion of a semiconductor module. Fig. 9C is a schematic plan view of a main portion of an example of a connecting member to be welded to the first terminal of the terminal stacking portion of a semiconductor module.

[0090] A terminal laminate 100E according to the fifth embodiment includes a first terminal 110 having a first region 111, a second region 112, and a third region 113, as shown in FIGS. 9A and 9B. In the first terminal 110 of the terminal laminate 100E, the first region 111 is disposed on a first surface 131 of an insulating sheet 130 extending in a first direction D1, and has a first width W1 in a second direction D2 perpendicular to the first direction D1 in a plan view. The second region 112 extends from the first region 111 and has a second width W2 in the second direction D2 in a plan view that is narrower than the first width W1. The second region 112 extends from the first region 111 toward a third direction D3 that is perpendicular to the first surface 131 of the insulating sheet 130 and away from the first surface 131. The third region 113 is electrically connected to the first region 111 and the second region 112 while being spaced apart from the first surface 131 of the insulating sheet .

[0091] In the terminal laminated portion 100E, in the third direction D3, a surface 111a (upper surface) of the first region 111 opposite the insulating sheet 130 is located closer to the insulating sheet 130 than a surface 113a (lower surface) of the third region 113 facing the insulating sheet 130. In the terminal laminated portion 100E, the third region 113 of the first terminal 110 is disposed so as to overlap with the first region 111 in a plan view.

[0092] In the first terminal 110 of the terminal laminate 100E, the first region 111 includes a wide portion 111b having a first width W1 in the second direction D2 and a narrow portion 111c extending from the wide portion 111b in the first direction D1 and having a third width W3 in the second direction D2 that is narrower than the first width W1. The narrow portions 111c are arranged in pairs, and the pair of narrow portions 111c are arranged spaced apart from each other on both side ends of the wide portion 111b in the second direction D2. The second region 112 extends from edges of the pair of narrow portions 111c of the first region 111 on the second direction D2 side, and the third region 113 extends in the second direction D2 from each of the pair of extended second regions 112 so as to overlap the narrow portion 111c of the first region 111 in a plan view.

[0093] Furthermore, the first terminal 110 of the terminal stack 100E can be formed by forming, by punching or the like, one notch extending in the first direction D1 and another notch extending in the second direction D2 and connecting to the first notch at the center, i.e., a T-shaped notch in a planar view, on the edge portion on the first direction D1 side of the flat terminal member, and then bending each of both side portions of the T-shaped notch once in the third direction D3 and bending the tip portion of the bent portion in the second direction D2 (the side that overlaps with the flat terminal member in a planar view).

[0094] In this way, in the first terminal 110 of the terminal laminate 100E, a pair of narrow portions 111c extend in the first direction D1 from the wide portion 111b of the first region 111, and the second regions 112 extend from the edges of the pair of narrow portions 111c on the second direction D2 side toward the third direction D3. Then, with respect to the insulating sheet 130, the third regions 113 extend in the second direction D2 from the pair of second regions 112 at positions higher than the wide portions 111b and narrow portions 111c of the first region 111 via the second regions 112 so as to overlap the narrow portions 111c of the first region 111 in a plan view.

[0095] 9(C), a connecting member 300 such as a bus bar is welded to the first terminal 110 of the terminal laminate 100E. The connecting member 300 welded to the first terminal 110 of the terminal laminate 100E has a pair of through-holes 350 (cutout portions) of a planar size into which a pair of second regions 112 extending from a pair of narrow portions 111c of the first terminal 110 are inserted, respectively.

[0096] When welding the first terminal 110 of the terminal laminate 100E shown in FIGS. 9(A) and 9(B) to the connection member 300 shown in FIG. 9(C), the connection member 300 is first placed on the first terminal 110 so that the pair of second regions 112 are inserted into the pair of through-holes 350 of the connection member 300. As a result, the portion of the connection member 300 outside the pair of through-holes 350 is inserted between the narrow portion 111c of the first region 111 and the third region 113 of the first terminal 110. At this time, the portion of the connection member 300 between the pair of through-holes 350 is located above the insulating sheet 130 between the narrow portions 111c of the first region 111. The second region 112 penetrates between the upper and lower surfaces of the connection member 300 at the through-holes 350. After the connection member 300 is placed, a laser beam is irradiated from the third region 113 side of the first terminal 110, and the third region 113 and the underlying connection member 300 are melted. Then, the melted portion is solidified, and the third region 113 and the connection member 300 are welded to each other at the welding portion 4.

[0097] During this laser welding, the third region 113 of the first terminal 110 is raised from the first region 111 on the insulating sheet 130 via the second region 112 to a position spaced apart from the insulating sheet 130. The connecting member 300 is inserted between the raised third region 113 and the narrow portion 111c of the first region 111, and the third region 113 and the connecting member 300 are welded together. The heat generated in the connecting member 300 when the laser beam is irradiated from the third region 113 is prevented from being directly transferred to the insulating sheet 130 because the connecting member 300 is located spaced apart from the insulating sheet 130 and the narrow portion 111c of the first region 111 is present below the connecting member 300. This prevents the insulating sheet 130 from being damaged by the heat generated during welding. Reducing damage to the insulating sheet 130 prevents changes in the material properties of the insulating sheet 130, thereby preventing a decrease in insulation performance and a decrease in withstand voltage.

[0098] The connecting member 300 to be welded to the first terminal 110 of the terminal stack 100E is not limited to the one shown in Figure 9(C), but may also be one in which the portion sandwiched between the pair of through-holes 350 is removed.

[0099] [Sixth embodiment] 10A and 10B are diagrams illustrating an example of a terminal stacking portion of a semiconductor module according to a sixth embodiment. Fig. 10A is a schematic perspective view of a main portion of an example of the terminal stacking portion of a semiconductor module. Fig. 10B is a schematic plan view of a main portion of an example of a first terminal of the terminal stacking portion of a semiconductor module. Fig. 10C is a schematic plan view of a main portion of an example of a connecting member to be welded to the first terminal of the terminal stacking portion of a semiconductor module.

[0100] A terminal laminate 100F according to a sixth embodiment includes a first terminal 110 having a first region 111, a second region 112, and a third region 113, as shown in FIGS. 10A and 10B. In the first terminal 110 of the terminal laminate 100F, the first region 111 is disposed on a first surface 131 of an insulating sheet 130 extending in a first direction D1, and has a first width W1 in a second direction D2 perpendicular to the first direction D1 in a plan view. The second region 112 extends from the first region 111 and has a second width W2 in the second direction D2 in a plan view that is narrower than the first width W1. The second region 112 extends from the first region 111 toward a third direction D3 that is perpendicular to the first surface 131 of the insulating sheet 130 and away from the first surface 131. The third region 113 is electrically connected to the first region 111 and the second region 112 while being spaced apart from the first surface 131 of the insulating sheet .

[0101] In the terminal laminated portion 100F, in the third direction D3, a surface 111a (upper surface) of the first region 111 opposite the insulating sheet 130 is located closer to the insulating sheet 130 than a surface 113a (lower surface) of the third region 113 facing the insulating sheet 130. In the terminal laminated portion 100F, the third region 113 of the first terminal 110 is disposed so as to overlap with the first region 111 in a plan view.

[0102] In the first terminal 110 of the terminal laminate 100F, the first region 111 includes a wide portion 111b having a first width W1 in the second direction D2, and a narrow portion 111c extending from the wide portion 111b in the first direction D1 and having a third width W3 in the second direction D2 that is narrower than the first width W1. The second regions 112 extend from both side edges of the narrow portions 111c of the first region 111 on the second direction D2 side, and third regions 113 extend in the second direction D2 from each of the pair of extended second regions 112 so as to overlap the narrow portions 111c of the first region 111 in a plan view.

[0103] Furthermore, the first terminal 110 of the terminal stack 100F can be formed by forming a notch extending in the second direction D2 on each side edge of the flat terminal member on the second direction D2 side by punching or the like, folding the outer portion of the notch (the tip end side of the flat terminal member) once in the third direction D3, and folding the folded tip end portion in the second direction D2 (the side that overlaps with the flat terminal member in a planar view).

[0104] In this way, in the first terminal 110 of the terminal laminate 100F, the narrow portions 111c extend in the first direction D1 from the wide portions 111b of the first region 111, and the second regions 112 extend from both side edges of the narrow portions 111c in the second direction D2 toward the third direction D3. Then, with respect to the insulating sheet 130, the third regions 113 extend in the second direction D2 from the pair of second regions 112 at positions higher than the wide portions 111b and narrow portions 111c of the first region 111 via the second regions 112 so as to overlap the narrow portions 111c of the first region 111 in a plan view.

[0105] 10(C), a connecting member 300 such as a bus bar is welded to the first terminal 110 of the terminal laminate 100F. The connecting member 300 welded to the first terminal 110 of the terminal laminate 100F has a protruding portion 360 of a planar size that can be inserted into the gap between the pair of second regions 112 extending from the narrow portion 111c of the first terminal 110.

[0106] When welding the first terminal 110 of the terminal laminate 100F shown in FIGS. 10(A) and 10(B) to the connecting member 300 shown in FIG. 10(C), the connecting member 300 is first placed on the first terminal 110 so that the protruding portion 360 of the connecting member 300 is inserted into the gap between the pair of second regions 112. As a result, the protruding portion 360 of the connecting member 300 is inserted between the narrow portion 111c of the first region 111 of the first terminal 110 and the third region 113. The notches 361 that sandwich the protruding portion 360 of the connecting member 300 can also be considered as penetration portions through which the second region 112 penetrates between the upper and lower surfaces of the connecting member 300. After the connecting member 300 is placed, a laser beam is irradiated from the third region 113 side of the first terminal 110, melting the third region 113 and the connecting member 300 thereunder. Then, the molten portion solidifies, and the third region 113 and the connection member 300 are welded to each other at the welding portion 4.

[0107] During this laser welding, the third region 113 of the first terminal 110 is raised from the first region 111 on the insulating sheet 130 via the second region 112 to a position spaced apart from the insulating sheet 130. The connecting member 300 is inserted between the raised third region 113 and the narrow portion 111c of the first region 111, and the third region 113 and the connecting member 300 are welded together. The heat generated in the connecting member 300 when the laser beam is irradiated from the third region 113 is prevented from being directly transferred to the insulating sheet 130 because the connecting member 300 is located spaced apart from the insulating sheet 130 and the narrow portion 111c of the first region 111 is present below the connecting member 300. This prevents the insulating sheet 130 from being damaged by the heat generated during welding. Reducing damage to the insulating sheet 130 prevents changes in the material properties of the insulating sheet 130, thereby preventing a decrease in insulation performance and a decrease in withstand voltage.

[0108] The connecting member 300 to be welded to the first terminal 110 of the terminal laminate portion 100F is not limited to the one shown in FIG. 10(C), and the one shown in FIG. 8(C) above can also be used.

[0109] [Seventh embodiment] 11A and 11B are diagrams illustrating an example of a terminal stacking portion of a semiconductor module according to a seventh embodiment. Fig. 11A is a schematic perspective view of a main part of an example of the terminal stacking portion of a semiconductor module. Fig. 11B is a schematic plan view of a main part of an example of a first terminal of the terminal stacking portion of a semiconductor module. Fig. 11C is a schematic plan view of a main part of an example of a connecting member to be welded to the first terminal of the terminal stacking portion of a semiconductor module.

[0110] A terminal laminate 100G according to the seventh embodiment includes a first terminal 110 having a first region 111, a second region 112, and a third region 113, as shown in FIGS. 11A and 11B. In the first terminal 110 of the terminal laminate 100G, the first region 111 is disposed on a first surface 131 of an insulating sheet 130 extending in a first direction D1, and has a first width W1 in a second direction D2 perpendicular to the first direction D1 in a plan view. The second region 112 extends from the first region 111 and has a second width W2 in the second direction D2 in a plan view that is narrower than the first width W1. The second region 112 extends from the first region 111 toward a third direction D3 that is perpendicular to the first surface 131 of the insulating sheet 130 and away from the first surface 131. The third region 113 is electrically connected to the first region 111 and the second region 112 while being spaced apart from the first surface 131 of the insulating sheet .

[0111] In the terminal laminated portion 100G, a surface 111a (upper surface) of the first region 111 opposite the insulating sheet 130 is located closer to the insulating sheet 130 in the third direction D3 than a surface 113a (lower surface) of the third region 113 facing the insulating sheet 130. In the terminal laminated portion 100G, the third region 113 of the first terminal 110 is disposed outside the first region 111 in a planar view. That is, the third region 113 is disposed so as not to overlap with the first region 111 in a planar view.

[0112] In the first terminal 110 of the terminal laminate 100G, the first region 111 includes a wide portion 111b having a first width W1 in the second direction D2, and a narrow portion 111c extending from the wide portion 111b in the first direction D1 and having a third width W3 in the second direction D2 that is narrower than the first width W1. The second regions 112 extend from both side edges of the narrow portions 111c of the first region 111 on the second direction D2 side, and third regions 113 extend in the second direction D2 from each of the pair of extended second regions 112 so as not to overlap with the first regions 111 in a plan view.

[0113] Furthermore, the first terminal 110 of the terminal stack 100G can be formed by forming a notch extending in the second direction D2 on each side edge of the flat terminal member on the second direction D2 side by punching or the like, folding the outer portion of the notch (the tip end side of the flat terminal member) once in the third direction D3, and folding the folded tip end portion in the second direction D2 (the side that does not overlap with the flat terminal member in a planar view).

[0114] In this way, in the first terminal 110 of the terminal laminate 100G, the narrow portions 111c extend in the first direction D1 from the wide portions 111b of the first region 111, and the second regions 112 extend from both side edges of the narrow portions 111c in the second direction D2 toward the third direction D3. Then, with respect to the insulating sheet 130, the third regions 113 extend in the second direction D2 from the pair of second regions 112 at positions higher than the wide portions 111b and narrow portions 111c of the first region 111 via the second regions 112 so as not to overlap with the first regions 111 in a plan view.

[0115] 11(C), a connecting member 300 such as a bus bar is welded to the first terminal 110 of the terminal laminate 100G. The connecting member 300 welded to the first terminal 110 of the terminal laminate 100G has a pair of through-holes 370 (cutout portions) of a planar size into which the pair of second regions 112 extending from the narrow width portions 111c of the first terminal 110 are inserted, respectively.

[0116] When welding the first terminal 110 of the terminal laminate 100G shown in FIGS. 11A and 11B to the connecting member 300 shown in FIG. 11C, the connecting member 300 is first placed on the first terminal 110 so that the pair of second regions 112 are inserted into the pair of through-holes 370 of the connecting member 300. As a result, the portion of the connecting member 300 outside the pair of through-holes 370 is inserted between the third region 113 of the first terminal 110 and the insulating sheet 130. At this time, the portion of the connecting member 300 between the pair of through-holes 370 is positioned above the narrow portion 111c of the first region 111. The second region 112 penetrates between the upper and lower surfaces of the connecting member 300 at the through-holes 370. After the connecting member 300 is placed, a laser beam is irradiated from the third region 113 side of the first terminal 110, melting the third region 113 and the connecting member 300 below it. Then, the molten portion solidifies, and the third region 113 and the connection member 300 are welded to each other at the welding portion 4.

[0117] During this laser welding, the third region 113 of the first terminal 110 is raised from the first region 111 on the insulating sheet 130 via the second region 112 to a position spaced apart from the insulating sheet 130. The connecting member 300 is inserted between the raised third region 113 and the insulating sheet 130, and the third region 113 and the connecting member 300 are welded together. A space exists between the connecting member 300 welded to the third region 113 and the insulating sheet 130. Therefore, heat generated in the connecting member 300 when irradiated with laser light from the third region 113 side is insulated by the space and is prevented from being directly transferred to the insulating sheet 130. This prevents damage to the insulating sheet 130 due to heat generated during welding. By preventing damage to the insulating sheet 130, changes in the material properties are prevented, and a decrease in insulating performance and a decrease in withstand voltage are prevented.

[0118] 11(C) is used as the connecting member 300 to be welded to the first terminal 110 of the terminal laminate 100G, when the portion outside the pair of through-holes 370 is inserted between the third region 113 and the insulating sheet 130, the portion between the pair of through-holes 370 is positioned above the narrow portion 111c of the first region 111. This makes it easier to insert the connecting member 300 without it colliding with the insulating sheet 130.

[0119] If there is no or low possibility of collision with the insulating sheet 130 when inserting the connecting member 300, the connecting member 300 to be welded to the first terminal 110 of the terminal stack 100G can be one in which the portion sandwiched between the pair of through portions 370 has been removed.

[0120] [Eighth embodiment] The terminal laminated sections 100A to 100G described above in the first to seventh embodiments are each an example, and various modifications are possible. Some examples will be described as the eighth embodiment.

[0121] 12 and 13 are diagrams illustrating an example of a terminal stacking portion of a semiconductor module according to the eighth embodiment. Figures 12(A) and 12(B), and 13(A) and 13(B) each show a schematic perspective view of a main portion of an example of a terminal stacking portion of a semiconductor module.

[0122] The terminal stack 100H shown in Figure 12(A) has a configuration in which the third region 113 in the first terminal 110 of the terminal stack 100A (Figures 4(A) and 4(B), etc.) described in the first embodiment above is extended from the second region 112 in the first direction D1 so as to overlap with the wide portion 111b of the first region 111 in a planar view.

[0123] For the terminal stack 100H having such a first terminal 110, a connecting member 300 ( FIG. 6(C) ) having a through-hole 310 (opening) of a planar size that allows the third region 113 and the second region 112 of the first terminal 110 to penetrate therethrough, as described in the second embodiment above, is used. During welding, the connecting member 300 is placed on the first terminal 110 so that the third region 113 and the second region 112 thereof are inserted into the through-hole 310 of the connecting member 300, and then the connecting member 300 is slid in the first direction D1 so that it is inserted between the third region 113 and the first region 111. Then, a laser beam is irradiated from the third region 113 side, and the third region 113 and the connecting member 300 are welded at the welding portion 4.

[0124] The heat generated in the connecting member 300 by the irradiation of the laser light from the third region 113 side is prevented from being directly transferred to the insulating sheet 130 because the connecting member 300 is located at a distance from the insulating sheet 130 and the wide portion 111b of the first region 111 is also present below the connecting member 300. This prevents the insulating sheet 130 from being damaged by the heat during welding, and thereby prevents a decrease in insulating performance and a decrease in withstand voltage.

[0125] In addition, in accordance with the example of the relationship between this terminal laminate 100H and the terminal laminate 100A, the third region 113 of the first terminal 110 of the terminal laminate 100B (FIGS. 6A and 6B) described in the second embodiment can be extended from the second region 112 in the first direction D1 so as not to overlap with the first region 111 in a plan view. Similarly, the third region 113 of the first terminal 110 of the terminal laminate 100C (FIGS. 7A and 7B) described in the third embodiment can be extended from the second region 112 in the first direction D1 so as not to overlap with the first region 111 in a plan view.

[0126] In addition, the terminal stack 100I shown in Figure 12(B) has a pair of second regions 112 extending in a third direction D3 provided on both sides of the wide portion 111b of the first terminal 110, sandwiching a narrow portion 111c extending in the first direction D1, and has a configuration in which third regions 113 extend in the first direction D1 from each of the pair of second regions 112 so as not to overlap with the first region 111 in a planar view.

[0127] In this terminal laminate 100I, the connecting member 300 is inserted between the pair of third regions 113 of the first terminal 110 and the narrow portion 111c of the first region 111, and laser light is applied from the third region 113 side to weld the third region 113 and the connecting member 300 at the welding portion 4. Heat generated in the connecting member 300 when irradiated with laser light is insulated by the space below the connecting member 300, and is prevented from being directly transferred to the insulating sheet 130. This prevents damage to the insulating sheet 130 due to heat during welding, and thereby prevents a resulting decrease in insulating performance and voltage resistance.

[0128] Furthermore, in the terminal stack 100I, if the end of the narrow portion 111c of the first region 111 in the first terminal 110 is shaped to protrude further than the end of the third region 113 in the extension direction, it becomes easier to insert the connecting member 300 between the narrow portion 111c and the third region 113 without it colliding with the insulating sheet 130.

[0129] In addition, in the terminal laminate 100I, an example has been shown in which the third region 113 is disposed so as not to overlap with the first region 111 in a plan view, but the third region 113 may extend from the second region 112 in the first direction D1 so as to overlap with the wide portion 111b of the first region 111 in a plan view. In this case, a connection member 300 is used that has a through portion (opening) of a planar size that allows the third region 113 and the second region 112 of the first terminal 110 to penetrate through. During welding, the connection member 300 is located at a position separated from the insulating sheet 130 and the first region 111 is further present below the connection member 300, so that heat generated in the connection member 300 during irradiation with laser light is prevented from being directly transferred to the insulating sheet 130.

[0130] In addition, the terminal stack 100J shown in Figure 13(A) has a configuration in which an opening 114 is provided in the first terminal 110, a second region 112 extends from the edge on the first direction D1 side inside the opening 114 toward the third direction D3 side, and a third region 113 extends from the second region 112 in the first direction D1 so as to overlap with the wide portion 111b of the first region 111 in a planar view.

[0131] Furthermore, the terminal stack 100K shown in Figure 13(B) has a pair of cutout portions 115 provided on both side ends of the first terminal 110 on the second direction D2 side, a second region 112 extending from the edge portion on the first direction D1 side of each of the pair of cutout portions 115 toward the third direction D3 side, and a third region 113 extending from the second region 112 in the first direction D1 so as to overlap with the wide portion 111b of the first region 111 in a planar view.

[0132] In these terminal laminates 100J and 100K, the connecting member 300 is inserted between the third region 113 of the first terminal 110 and the wide portion 111b of the first region 111, and laser light is irradiated from the third region 113 side to weld the third region 113 and the connecting member 300 at the welding location 4. Heat generated in the connecting member 300 during laser light irradiation is prevented from being directly transferred to the insulating sheet 130 because the connecting member 300 is located away from the insulating sheet 130 and the first region 111 is also present below the connecting member 300. This prevents the insulating sheet 130 from being damaged by heat during welding, thereby preventing a resulting decrease in insulating performance and voltage resistance.

[0133] Furthermore, in the terminal stacking portion 100J and the terminal stacking portion 100K, if the end of the wide portion 111b of the first region 111 in the first terminal 110 is shaped to protrude further than the end of the third region 113 in the extension direction, it becomes easier to insert the connecting member 300 between the wide portion 111b and the third region 113 without it colliding with the insulating sheet 130.

[0134] In addition, in the terminal laminated section 100J and the terminal laminated section 100K, an example has been shown in which the third region 113 is disposed so as to overlap the wide portion 111b of the first region 111 in a plan view, but the third region 113 may extend from the second region 112 in the first direction D1 so as not to overlap with the first region 111 in a plan view. In this case, a connecting member 300 is used that has a through portion (opening) of a planar size that allows the third region 113 and the second region 112 of the first terminal 110 to penetrate through. During welding, a space is present below the connecting member 300, and therefore, heat generated in the connecting member 300 when irradiated with laser light is insulated by the space and is prevented from being directly transferred to the insulating sheet 130.

[0135] [Ninth embodiment] Here, an example of a method for manufacturing a semiconductor device including a semiconductor module having a terminal stack portion as described in the first to eighth embodiments, a connecting member, and a capacitor will be described as a ninth embodiment. FIG. 14 is a diagram illustrating a method for manufacturing a semiconductor device according to the ninth embodiment.

[0136] In manufacturing a semiconductor device (such as the semiconductor device 5 shown in FIG. 5A above), a semiconductor module 1 or the like having terminal stacked portions 100A-100K or the like as described in the first to eighth embodiments is prepared (step S1). Furthermore, a capacitor 200 as described above is prepared to be connected to the semiconductor module 1 or the like prepared in step S1 (step S2). Furthermore, a connecting member 300 as described above, that is, a connecting member 300 having a shape based on the configuration of the terminal stacked portions 100A-100K or the like, is prepared to be used to connect the semiconductor module 1 or the like prepared in step S1 to the capacitor 200 prepared in step S2 (step S3). The order of steps S1 to S3 does not matter.

[0137] After preparing the semiconductor module 1 or the like, the capacitor 200, and the connection member 300, first, the second terminal 120 of the semiconductor module 1 or the like and the fourth terminal 240 of the capacitor 200 are laser-welded at the welding portion 2 (step S4). At this time, the fourth terminal 240 of the capacitor 200 is placed on the second terminal 120 of the semiconductor module 1 or the like, and a laser beam is irradiated onto the welding portion 2 from the side of the fourth terminal 240. As a result, the second terminal 120 of the semiconductor module 1 or the like and the fourth terminal 240 of the capacitor 200 are laser-welded.

[0138] After laser welding the fourth terminal 240 of the capacitor 200 and the second terminal 120 of the semiconductor module 1 or the like, the insulating sheet 250 of the capacitor 200 is folded so as to cover the fourth terminal 240, the second terminal 120 and their welded portion 2 (step S5).

[0139] Next, one end of the connection member 300 is inserted under the third region 113 of the first terminal 110 in the terminal stacked portions 100A-100K of the semiconductor module 1, etc., which is raised above the insulating sheet 130 (step S6). At the same time, the other end of the connection member 300 is placed on the third terminal 230 of the capacitor 200 (step S7). The order of steps S6 and S7 does not matter.

[0140] Then, a laser beam is applied to the third region 113 of the first terminal 110 in the terminal stacks 100A-100K of the semiconductor module 1 or the like, which is located on one end of the connection member 300, from the third region 113 side, and the third region 113 of the first terminal 110 and one end of the connection member 300 are laser-welded at welding portion 4 (step S8). Furthermore, a laser beam is applied to the other end of the connection member 300 placed on the third terminal 230 of the capacitor 200 from the connection member 300 side, and the third terminal 230 and the other end of the connection member 300 are laser-welded at welding portion 3 (step S9). The order of steps S8 and S9 does not matter.

[0141] For example, a semiconductor device is manufactured using a method such as steps S1 to S9. In manufacturing a semiconductor device, as described above, one end of the connection member 300 is inserted under the third region 113 of the first terminal 110 in the terminal stack 100A-100K of the semiconductor module 1 or the like, which is raised above the insulating sheet 130. A space or a portion of the first region 110 exists between the inserted end of the connection member 300 and the insulating sheet 130. Therefore, heat generated in the connection member 300 by irradiation with laser light from the third region 113 side is prevented from being directly transferred to the insulating sheet 130. This prevents damage to the insulating sheet 130 due to heat during welding. By preventing damage to the insulating sheet 130, changes in the properties of the material are prevented, and deterioration in insulating performance and therefore reduction in withstand voltage are prevented. A high-quality, high-performance semiconductor device is realized in which a high-quality, high-performance semiconductor module 1 or the like and a capacitor 200 are connected using the connection member 300.

[0142] The first to ninth embodiments have been described above. In the terminal laminates 100A to 100K and the like described in the first to eighth embodiments, the first terminals 110 and the connection members 300 to be welded may be nickel-plated or roughened on their surfaces to suppress reflection of the laser light and enable absorption. The treatment may be selectively performed on the laser light irradiated regions of the first terminals 110 and the connection members 300 to be welded, or may be selectively performed on the third regions 113 of the first terminals 110 that are directly irradiated with the laser light.

[0143] Furthermore, in the above explanation, an example has been shown in which the connecting member 300 is welded to the surface 113a (lower surface) of the third region 113 of the first terminal 110 of the terminal laminated sections 100A to 100K, etc., facing the insulating sheet 130, but the connecting member 300 can also be welded to the surface (upper surface) of the third region 113 opposite the insulating sheet 130. However, in this case, it should be noted that the connecting member 300 is positioned farther away from the second terminal 120 and the fourth terminal 240, which have the opposite polarity, than when it is welded to the surface 113a of the third region 113, and therefore the inductance reduction effect may be smaller.

[0144] Furthermore, the number of second regions 112 and third regions 113 extending from the wide portions 111b or narrow portions 111c of the first region 111 in the first terminals 110 of the terminal laminates 100A to 100K, and the number of narrow portions 111c extending from the wide portions 111b of the first region 111 are not limited to those shown in the above examples. It is also possible to provide more second regions 112 and third regions 113 and narrow portions 111c, or to provide fewer second regions 112 and third regions 113 and narrow portions 111c. [Explanation of symbols]

[0145] 1,1a semiconductor module 2,3,4,4a Welded parts 5,5a Semiconductor Device 10 Cooling body 20,210 cases 21 Outer wall 22 terminals 30 Insulated circuit board 31 Insulating substrate 32,33 Conductor layer 40, 40x, 40y semiconductor chips 50 wire 60 Thermal Conductive Materials 70 Bonding material 80 Conductive material 90 Conductive Block 100, 100A, 100B, 100C, 100D, 100E, 100F, 100G, 100H, 100I, 100J, 100K Terminal stacking section 110 1st terminal 111 First area 111a,113a plane 111b wide part 111c narrow part 112 Second area 113 Third area 114 Opening 115,331,361 Notch 120 2nd terminal 130,250 Insulation sheet 131 Page 1 132 2nd page 133 Terrace 140 output terminal 150 Sealing resin 200 Capacitor 230 3rd terminal 240 4th terminal 300 Connecting member 310, 340, 350, 370 Penetration 320 End 330,360 Protrusion 400 laser light 410 damage 420 Space D1 1st direction D2 2nd direction D3 Third direction W1 1st width W2 Second width W3 3rd width

Claims

1. an insulating sheet extending in a first direction; a first terminal including: a first region disposed on a first surface of the insulating sheet and having a first width in a second direction perpendicular to the first direction in a plan view; a second region extending from the first region and having a second width narrower than the first width in the second direction in a plan view; and a third region spaced apart from the first surface and electrically connected to the first region and the second region; A semiconductor module comprising:

2. 2. The semiconductor module of claim 1, wherein in a third direction perpendicular to the first surface and away from the first surface, the surface of the first region opposite the insulating sheet is located closer to the insulating sheet than the surface of the third region facing the insulating sheet.

3. The semiconductor module according to claim 1 , wherein the third region is disposed so as to overlap the first region in a plan view.

4. The semiconductor module according to claim 1 , wherein the third region is disposed outside the first region in a plan view.

5. the first region has a wide portion having the first width in the second direction, and a narrow portion extending from the wide portion in the first direction and having a third width in the second direction that is narrower than the first width, the second region extends from an edge of the wide portion on the first direction side, The semiconductor module according to claim 1 , wherein the third region extends from the second region in the first direction.

6. the first region has a wide portion having the first width in the second direction, and a narrow portion extending from the wide portion in the first direction and having a third width in the second direction that is narrower than the first width, the second region extends from an edge of the narrow portion on the second direction side, The semiconductor module according to claim 1 , wherein the third region extends from the second region in the second direction.

7. The semiconductor module according to claim 5 , wherein the narrow width portion is disposed at an end of the wide width portion in the second direction.

8. The semiconductor module according to claim 5 , wherein the narrow portion is disposed more inward than an end of the wide portion in the second direction.

9. The semiconductor module according to claim 1 , further comprising a second terminal disposed on a second surface of the insulating sheet opposite to the first surface.

10. The semiconductor module according to any one of claims 1 to 9; a connecting member welded to the third region; A semiconductor device comprising:

11. The semiconductor device according to claim 10 , wherein the connecting member is welded to a surface of the third region facing the insulating sheet.

12. The semiconductor device according to claim 11 , wherein the connection member has a welded portion welded to a surface of the third region facing the insulating sheet, and a through portion through which the second region passes.

13. The semiconductor device according to claim 10 , further comprising: a capacitor having a third terminal connected to the connection member.

14. an insulating sheet extending in a first direction; a first terminal including: a first region disposed on a first surface of the insulating sheet and having a first width in a second direction perpendicular to the first direction in a plan view; a second region extending from the first region and having a second width narrower than the first width in the second direction in a plan view; and a third region spaced apart from the first surface and electrically connected to the first region and the second region; a preparation step of preparing a semiconductor module comprising: a preparation step of preparing a connection member; a welding step of welding the third region of the semiconductor module to the connection member; A method for manufacturing a semiconductor device comprising:

15. The welding step includes: placing the connection member on the insulating sheet side of the third region; irradiating the third region with a laser from a side opposite to the insulating sheet to weld the surface of the third region facing the insulating sheet to the connecting member; The method for manufacturing a semiconductor device according to claim 14, comprising:

16. The method for manufacturing a semiconductor device according to claim 15 , wherein the connection member has a welded portion welded to a surface of the third region facing the insulating sheet, and a through portion through which the second region passes.

17. 17. The method for manufacturing a semiconductor device according to claim 14, wherein the connection member is connected to a third terminal of a capacitor.

Images