Plasma-resistant glass, chamber internal parts for semiconductor manufacturing process and their manufacturing method

Abstract

The present invention relates to plasma-resistant glass, chamber internal parts for semiconductor manufacturing processes, and methods for manufacturing the same. More specifically, the present invention relates to plasma-resistant glass that can prevent damage due to thermal shock during high-temperature use by adjusting the component contents of the plasma-resistant glass to reduce the thermal expansion coefficient, and a method for manufacturing the same.

Description

[Technical Field]

[0001] This invention claims the benefit of the filing date of Korean Patent Application No. 10-2021-0072961, filed with the Korean Intellectual Property Office on June 4, 2021, the entire contents of which are incorporated herein. The present invention relates to plasma-resistant glass, chamber internal parts for semiconductor manufacturing processes, and methods for manufacturing the same. Specifically, the present invention relates to plasma-resistant glass that can prevent damage due to thermal shock during high-temperature use by adjusting the component content of the plasma-resistant glass to reduce the thermal expansion coefficient, and a method for manufacturing the same. [Background technology]

[0002] Plasma etching processes are used in the manufacture of semiconductors and / or displays. In recent years, as nanoprocessing has become more common, etching has become more difficult, and corrosion-resistant oxide ceramics such as alumina (Al2O3) and yttria (Y2O3) are now commonly used for the internal parts of process chambers that are exposed to high-density plasma environments.

[0003] When polycrystalline materials are exposed to high-density plasma etching environments using fluorine-based gases for extended periods, localized erosion can cause particles to slough off, resulting in a high probability of contaminant particle generation, which can cause semiconductor / display defects and negatively impact production yields. Summary of the Invention [Problem to be solved by the invention]

[0004] The technical problem to be solved by the present invention is to provide plasma-resistant glass that has excellent resistance to plasma inside a chamber used in a semiconductor manufacturing process, excellent heat resistance under high temperature conditions, and prevents damage to components used inside the chamber, components for use inside a chamber in a semiconductor manufacturing process, and methods for manufacturing the same.

[0005] However, the problems to be solved by the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description. [Means for solving the problem]

[0006] One embodiment of the present invention provides a plasma-resistant glass containing 55 mol % to 70 mol % of SiO2, 5 mol % to 20 mol % of Al2O3, and 29 mol % to 35 mol % of MgO.

[0007] One embodiment of the present invention provides an internal chamber part for a semiconductor manufacturing process, which is made of the plasma-resistant glass.

[0008] One embodiment of the present invention provides a method for manufacturing plasma-resistant glass, including the steps of melting a composition containing 55 mol% to 70 mol% of SiO, 5 mol% to 20 mol% of AlO, and 29 mol% to 35 mol% of MgO; and quenching the molten composition.

[0009] One embodiment of the present invention provides a method for manufacturing a chamber internal part for a semiconductor manufacturing process, the method including the steps of melting the plasma-resistant glass; injecting the molten plasma-resistant glass into a mold; and annealing the injected plasma-resistant glass. [Effects of the Invention]

[0010] The plasma-resistant glass according to one embodiment of the present invention exhibits a low thermal expansion coefficient, and therefore can prevent damage due to thermal shock in a high-temperature atmosphere.

[0011] According to one embodiment of the present invention, an internal chamber part for a semiconductor manufacturing process can realize a low etching rate with respect to plasma, thereby extending the usable life of the semiconductor manufacturing process, and can prevent damage to the part due to thermal shock, thereby improving durability.

[0012] A method for producing plasma-resistant glass according to one embodiment of the present invention can easily produce plasma-resistant glass and prevent damage due to thermal shock in a high-temperature atmosphere.

[0013] A method for manufacturing a chamber interior part for a semiconductor manufacturing process according to one embodiment of the present invention can manufacture parts having various shapes and can prevent damage due to thermal shock in a high-temperature atmosphere.

[0014] The effects of the present invention are not limited to those described above, and effects not mentioned herein will be clearly understood by those skilled in the art from the specification and accompanying drawings of this application. [Brief explanation of the drawings]

[0015] [Figure 1] 1 is a flowchart of a method for manufacturing plasma-resistant glass according to one embodiment of the present invention. [Figure 2] 1 is a flowchart of a method for manufacturing a chamber internal part for a semiconductor manufacturing process according to one embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0016] Throughout this specification, when a part is said to "comprise" a certain element, this does not mean that it excludes other elements, but that it may further include other elements, unless specifically stated to the contrary.

[0017] Throughout this specification, when we say that a member is located "on" another member, this includes not only when the member is in contact with the other member, but also when there is another member between the two members.

[0018] Throughout the specification of this application, "A and / or B" means "A and B, or A or B."

[0019] The present invention will be described in further detail below.

[0020] One embodiment of the present invention provides a plasma-resistant glass containing 55 mol % to 70 mol % of SiO2, 5 mol % to 20 mol % of Al2O3, and 29 mol % to 35 mol % of MgO.

[0021] The plasma-resistant glass according to one embodiment of the present invention exhibits a low thermal expansion coefficient, and therefore can prevent damage due to thermal shock in a high-temperature atmosphere.

[0022] According to one embodiment of the present invention, the plasma-resistant glass contains 55 mol% to 70 mol% of SiO2. Specifically, the plasma-resistant glass may contain 56 mol% to 69 mol%, 57 mol% to 68 mol%, 58 mol% to 67 mol%, 59 mol% to 66 mol%, 60 mol% to 65 mol%, 61 mol% to 64 mol%, or 62 mol% to 63 mol% of SiO2. As described above, by including SiO2 and adjusting the SiO2 content within the above range, the basic physical properties of the plasma-resistant glass can be ensured, durability and reliability can be improved, the plasma-resistant glass can be easily processed, and part production costs can be reduced.

[0023] According to one embodiment of the present invention, the plasma-resistant glass contains 5 mol% to 20 mol% Al2O3. Specifically, the plasma-resistant glass may contain 6 mol% to 19 mol%, 7 mol% to 18 mol%, 8 mol% to 17 mol%, 9 mol% to 16 mol%, 10 mol% to 15 mol%, 11 mol% to 14 mol%, or 12 mol% to 13 mol% Al2O3. As described above, by including Al2O3 and adjusting the Al2O3 content within the above range, outgassing can be prevented, particle generation can be suppressed, and the wear resistance of chamber interior parts used in semiconductor manufacturing processes can be improved.

[0024] According to one embodiment of the present invention, the plasma-resistant glass contains 29 mol% to 35 mol% MgO. Specifically, the plasma-resistant glass may contain 29 mol% to 35 mol%, 30 mol% to 34 mol%, 31 mol% to 33 mol%, 32 mol% to 33 mol%, or 31 mol% to 32 mol% MgO. As described above, by including MgO and adjusting the MgO content within the above range, the thermal expansion coefficient and glass transition temperature of the glass can be reduced, thereby minimizing thermal shock at high temperatures and improving the durability of chamber internal parts for semiconductor manufacturing processes.

[0025] According to one embodiment of the present invention, the molar ratio of the SiO2 to the Al2O3 may be 6:1 to 2.5:1. Specifically, the molar ratio of the SiO2 to the Al2O3 can be 5.9:1 to 2.6:1, 5.8:1 to 2.7:1, 5.7:1 to 2.8:1, 5.6:1 to 2.9:1, 5.5:1 to 3.0:1, 5.4:1 to 3.1:1, 5.3:1 to 3.2:1, 5.2:1 to 3.3:1, 5.1:1 to 3.4:1, 5.0:1 to 3.5:1, 4.9:1 to 3.6:1, 4.8:1 to 3.7:1, 4.7:1 to 3.8:1, 4.6:1 to 3.9:1, 4.5:1 to 4.0:1, 4.4:1 to 4.1:1, or 4.3:1 to 4.2:1. By adjusting the molar ratio of SiO2 to Al2O3 within the above range, the wear resistance of the plasma-resistant glass can be improved and at the same time, the processability can be easily realized.

[0026] According to one embodiment of the present invention, the molar ratio of SiO2 to MgO may be 2:1 to 1.4:1. Specifically, the molar ratio of SiO2 to MgO may be 2:1 to 1.4:1, 1.9:1 to 1.5:1, 1.8:1 to 1.6:1, 1.7:1 to 1.6:1, or 1.8:1 to 1.7:1. By adjusting the molar ratio of SiO2 to MgO within the above range, the durability and reliability of the plasma-resistant glass can be improved, while also improving its resistance to thermal shock at high temperatures.

[0027] According to one embodiment of the present invention, the molar ratio of MgO to Al2O3 may be 3.5:1 to 1.5:1. Specifically, the molar ratio of MgO to Al2O3 may be 3.4:1 to 1.6:1, 3.3:1 to 1.7:1, 3.2:1 to 1.8:1, 3.1:1 to 1.9:1, 3.0:1 to 2.0:1, 2.9:1 to 2.1:1, 2.8:1 to 2.2:1, 2.7:1 to 2.3:1, or 2.6:1 to 2.4:1. By adjusting the molar ratio of MgO to Al2O3 within the above range, thermal shock at high temperatures can be minimized and durability of chamber internal parts for semiconductor manufacturing processes can be improved.

[0028] According to one embodiment of the present invention, the glass transition temperature of the plasma-resistant glass may be 750° C. to 850° C. Specifically, the glass transition temperature of the plasma-resistant glass may be 760° C. to 840° C., 770° C. to 830° C., 780° C. to 820° C., or 790° C. to 810° C. By adjusting the glass transition temperature of the plasma-resistant glass within the above range, it is possible to minimize thermal shock at high temperatures and improve durability of components used inside a chamber for semiconductor manufacturing processes.

[0029] According to one embodiment of the present invention, the thermal expansion coefficient of the plasma-resistant glass is 4.0×10 -6 m / (m℃) or more 6.0×10 -6 Specifically, the thermal expansion coefficient of the plasma-resistant glass may be 4.1×10 -6 m / (m℃) or more 5.9×10 -6 m / (m℃) or less, 4.2×10 -6 m / (m℃) or more 5.8×10 -6 m / (m℃) or less, 4.3×10 -6 m / (m℃) or more 5.7×10 -6 m / (m℃) or less, 4.4×10 -6 m / (m℃) or more 5.6×10 -6 m / (m℃) or less, 4.5×10 -6 m / (m℃) or more 5.5×10 -6 m / (m℃) or less, 4.6×10 -6m / (m℃) or more 5.4×10 -6 m / (m℃) or less, 4.7×10 -6 m / (m℃) or more 5.3×10 -6 m / (m℃) or less, 4.8×10 -6 m / (m℃) or more 5.2×10 -6 m / (m℃) or less, or 4.9×10 -6 m / (m℃) or more 5.1×10 -6 By adjusting the thermal expansion coefficient of the plasma-resistant glass within the above range, damage to components due to thermal shock can be prevented, thereby improving durability.

[0030] According to one embodiment of the present invention, the plasma-resistant glass may have an etching rate of 18 nm / min or less in a mixture plasma of fluorine and argon (Ar). Specifically, the etching rate in a mixture plasma of fluorine and argon (Ar) may be greater than 0 nm / min to 17 nm / min, 1 nm / min to 16 nm / min, 2 nm / min to 15 nm / min, 3 nm / min to 14 nm / min, 4 nm / min to 13 nm / min, 5 nm / min to 12 nm / min, 6 nm / min to 11 nm / min, or 7 nm / min to 10 nm / min. By achieving an etching rate in the mixture plasma of fluorine and argon (Ar) within the above range, components used in a chamber for a semiconductor manufacturing process can achieve a low etching rate in plasma, thereby extending the service life of the semiconductor manufacturing process.

[0031] One embodiment of the present invention provides an internal chamber part for a semiconductor manufacturing process, which is made of the plasma-resistant glass.

[0032] According to one embodiment of the present invention, an internal chamber part for a semiconductor manufacturing process can realize a low etching rate with respect to plasma, thereby extending the usable life of the semiconductor manufacturing process, and can prevent damage to the part due to thermal shock, thereby improving durability.

[0033] According to one embodiment of the present invention, the internal part may be any one of a focus ring, an edge ring, a cover ring, a ring shower, an insulator, an EPD window, an electrode, a viewport, an inner shutter, an electrostatic chuck, a heater, a chamber liner, a shower head, a CVD (Chemical Vapor Deposition) boat, a wall liner, a shield, a cold pad, a source head, an outer liner, a deposition shield, an upper liner, an exhaust plate, and a mask frame. As described above, by using the internal components, the resistance to plasma in the semiconductor manufacturing process can be improved, thereby extending the usable time, thereby minimizing the cost required for semiconductor manufacturing.

[0034] One embodiment of the present invention provides a method for manufacturing plasma-resistant glass, including the steps of: melting (S11) a composition containing 55 mol% to 70 mol% of SiO2, 5 mol% to 20 mol% of Al2O3, and 29 mol% to 35 mol% of MgO; and quenching (S13) the molten composition.

[0035] A method for producing plasma-resistant glass according to one embodiment of the present invention can easily produce plasma-resistant glass and prevent damage due to thermal shock in a high-temperature atmosphere.

[0036] In the method for producing plasma-resistant glass, which is one embodiment of the present invention, details that overlap with those of the plasma-resistant glass described above will be omitted.

[0037] According to one embodiment of the present invention, the method for manufacturing the plasma-resistant glass includes the step (S11) of melting a composition containing 55 mol% to 70 mol% of SiO2, 5 mol% to 20 mol% of Al2O3, and 29 mol% to 35 mol% of MgO. As described above, by adjusting the components of the plasma-resistant glass and adjusting the amounts of the components, it is possible to prevent damage to the plasma-resistant glass due to thermal shock in a high-temperature atmosphere.

[0038] According to one embodiment of the present invention, the method for manufacturing the plasma-resistant glass further includes the step of quenching the molten composition (S13). As described above, by including the step of quenching the molten composition, the crystallinity of the plasma-resistant glass can be controlled, and melting can be easily performed in the process of manufacturing chamber internal parts for semiconductor manufacturing processes.

[0039] According to one embodiment of the present invention, the temperature of the quenching step may be room temperature. By adjusting the temperature of the quenching step within the above-mentioned range, the crystallization of the plasma-resistant glass can be controlled, and melting can be easily performed in the process of manufacturing chamber internal parts for semiconductor manufacturing processes.

[0040] According to one embodiment of the present invention, the melting temperature in the step of melting the composition may be 1400° C. to 1700° C. Specifically, the melting temperature in the step of melting the composition may be 1400° C. to 1700° C., 1450° C. to 1650° C., or 1500° C. to 1600° C. By adjusting the melting temperature in the step of melting the composition within the above range, the viscosity of the composition can be adjusted, thereby improving the workability of the process of manufacturing the plasma-resistant glass.

[0041] One embodiment of the present invention provides a method for manufacturing a chamber internal part for a semiconductor manufacturing process, including the steps of melting the plasma-resistant glass (S21); injecting the molten plasma-resistant glass into a mold (S23); and annealing the injected plasma-resistant glass (S25).

[0042] A method for manufacturing a chamber interior part for a semiconductor manufacturing process according to one embodiment of the present invention can manufacture parts having various shapes and can prevent damage due to thermal shock in a high-temperature atmosphere.

[0043] According to one embodiment of the present invention, the method for manufacturing a chamber interior part for a semiconductor manufacturing process includes the step of melting the plasma-resistant glass (S21). As described above, by including the step of melting the plasma-resistant glass, the workability of the process for manufacturing the chamber interior part for a semiconductor manufacturing process is improved, and at the same time, the molten metal of the plasma-resistant glass can be poured into a mold to be formed into various shapes.

[0044] According to one embodiment of the present invention, the method for manufacturing a chamber internal part for a semiconductor manufacturing process includes the step of injecting the molten plasma-resistant glass into a mold (S23). As described above, by injecting the molten plasma-resistant glass into a mold, various types of parts can be manufactured.

[0045] According to one embodiment of the present invention, the mold may have any one of the following forms: a focus ring, an edge ring, a cover ring, a ring shower, an insulator, an EPD window, an electrode, a viewport, an inner shutter, an electrostatic chuck, a heater, a chamber liner, a shower head, a CVD (Chemical Vapor Deposition) boat, a wall liner, a shield, a cold pad, a source head, an outer liner, a deposition shield, an upper liner, an exhaust plate, and a mask frame. As described above, by implementing various shapes of the mold, it is possible to easily implement the shape of the part and shorten the manufacturing time.

[0046] According to one embodiment of the present invention, the method for manufacturing a chamber internal part for a semiconductor manufacturing process includes a step of annealing the injected plasma-resistant glass (S25). As described above, by including the step of annealing the injected plasma-resistant glass, stress caused by heat generated in the part manufactured by being injected into the mold can be minimized, thereby improving the durability of the part and minimizing thermal shock at high temperatures.

[0047] According to one embodiment of the present invention, the melting temperature in the step of melting the plasma-resistant glass may be 1400° C. to 1700° C. Specifically, the melting temperature in the step of melting the plasma-resistant glass may be 1450° C. to 1650° C. or 1500° C. to 1600° C. By adjusting the melting temperature in the step of melting the plasma-resistant glass within the above range, the viscosity of the molten plasma-resistant glass can be adjusted, thereby improving workability. According to an embodiment of the present invention, the temperature of the annealing step may be 400°C or more and 900°C or less. Specifically, the temperature of the annealing step may be 430°C to 890°C, 450°C to 880°C, 470°C to 870°C, 500°C to 860°C, 550°C to 850°C, 560°C to 840°C, 570°C to 830°C, 580°C to 820°C, 590°C to 810°C, 600°C to 800°C, 610°C to 790°C, 620°C to 780°C, 630°C to 770°C, 640°C to 760°C, 650°C to 750°C, 660°C to 740°C, 670°C to 730°C, 680°C to 720°C, or 690°C to 710°C. By controlling the temperature of the annealing step within the above range, it is possible to reduce thermal stress formed in the components inside the chamber for the semiconductor manufacturing process, minimize thermal shock at high temperatures, and improve the durability of the components.

[0048] According to one embodiment of the present invention, the method may further include a step (S27) of processing a precursor of a chamber internal part for a semiconductor manufacturing process manufactured from the annealed plasma-resistant glass. As described above, by processing the precursor of a chamber internal part for a semiconductor manufacturing process, a sophisticated part can be manufactured.

[0049] Hereinafter, the present invention will be described in detail with reference to examples. However, the examples according to the present invention may be modified in various different forms, and the scope of the present invention should not be construed as being limited to the examples described below. The examples in this specification are provided to more completely explain the present invention to those skilled in the art.

[0050] Example 1 A composition containing 59.27 mol% SiO2, 10.31 mol% Al2O3, and 30.43 mol% MgO was prepared. Specifically, the total chemical components were placed in a weight of 600g and mixed for approximately 1 hour using a zirconia ball mill. That is, the composition was dry-mixed with 600g of composition and 1800g of zirconia balls (weight ratio 1:3) and then dried for 24 hours. The dried composition was then heated in a Super Kanthal furnace at a rate of 10°C / min until it reached 1400°C, at which point it was maintained for approximately 2 hours and 30 minutes.

[0051] The molten composition was quenched to room temperature to prepare a plasma-resistant glass.

[0052] <Example 2> A plasma-resistant glass was manufactured in the same manner as in Example 1, except that the composition used in Example 1 contained 52.50 mol % SiO, 15.00 mol % AlO, and 32.50 mol % MgO.

[0053] <Comparative Example 1> A plasma-resistant glass was manufactured in the same manner as in Example 1, except that the composition used in Example 1 contained 52.10 mol% SiO, 11.94 mol% AlO, and 35.97 mol% MgO.

[0054] <Experimental Example 1: Measurement of glass transition temperature and thermal expansion coefficient> The thermal expansion coefficients (α=100 to 300°C) and glass transition temperatures (Tg) of the plasma-resistant glasses of Examples 1 and 2 and Comparative Example 1 were measured at a temperature rise rate of 10°C in an N-4 wt% H mixed gas atmosphere using a dilatometer (DIL402C, NETZSCH, Germany), and the results are summarized in Table 1 below.

[0055] <Experimental Example 2: Etching Rate Measurement> Both sides of the plasma-resistant glass of Examples 1 and 2 and Comparative Example 1 were masked at 3 mm intervals, and the exposed areas were then etched in a CF4 mixed gas environment for about 1 hour using an ICP-Etcher device under the following etching conditions: RF power (W): 600 RF power, bias (W): 150 CF4(SCCM):30 Ar(SCCM):10 O2(SCCM):5 Pressure (mTorr): 10 Time (min): 60

[0056] After the etching was completed, the masking was removed from the plasma-resistant glass, and the step height before and after etching was measured three times using a Surfcorder ET3000 (Kosaka Laboratory Ltd., Japan). The average values ​​were then summarized in Table 1 below.

[0057] [Table 1]

[0058] Referring to Table 1, Examples 1 and 2 have a glass transition temperature of 810°C or less and an etching rate of 16nm / min or less. This indicates that the melting point is low and the etching rate is low, improving workability and durability. Furthermore, the thermal expansion coefficient is low, preventing thermal shock at high temperatures.

[0059] In contrast, in Comparative Example 1, the etching rate and glass transition temperature were low because the contents of SiO2, Al2O3, and MgO were not all satisfied, but the thermal expansion coefficient was high, making it vulnerable to thermal shock at high temperatures.

[0060] Therefore, in one embodiment of the present invention, the plasma-resistant glass satisfies the SiO2, Al2O3, and MgO contents, thereby realizing a low etching rate and glass transition temperature, and at the same time, realizing a low thermal expansion coefficient, thereby preventing thermal shock at high temperatures.

[0061] Although the present invention has been described above using limited examples, the present invention is not limited thereto, and it goes without saying that various modifications and variations can be made by a person having ordinary skill in the art to which the present invention pertains within the technical spirit of the present invention and the equivalent scope of the claims set forth below. [Explanation of symbols]

[0062] S11: Melting stage of the composition S13: Quenching stage S21: Melting stage of plasma-resistant glass S23: Mold injection stage S25: Annealing step S27: Processing stage

Claims

1. 55 mol % or more and 66 mol % or less of SiO ２ , 5 mol % or more and 16 mol % or less of Al ２ O ３ and 29 mol% to 35 mol% MgO, The SiO ２ and the Al ２ O ３ The molar ratio of The thermal expansion coefficient is 4.0 x 10 －６ m / (m℃) or more 5.4×10 －６ m / (m ° C.) or less, Plasma resistant glass.

2. The SiO ２ and the molar ratio of MgO is 2:1 to 1.6:

1. The plasma-resistant glass according to claim 1.

3. The MgO and the Al ２ O ３ The molar ratio of is 3.5:1 to 1.9:

1. The plasma-resistant glass according to claim 1.

4. The glass transition temperature is 750°C or higher and 850°C or lower. The plasma-resistant glass according to claim 1.

5. The etching rate by a mixed plasma of fluorine and argon (Ar) is 18 nm / min or less. The plasma-resistant glass according to claim 1.

6. Manufactured from the plasma-resistant glass of claim 1. Chamber internal parts for semiconductor manufacturing processes.

7. The internal parts include a focus ring, an edge ring, a covering ring, a ring shower, an insulator, an EPD window, an electrode, a view port, an inner shutter, an electrostatic chuck, a heater, a chamber liner, a shower head, a boat for CVD (Chemical Vapor Deposition), a wall liner, a shield, and a cold pad. pad), source head, outer liner, deposition shield, upper liner, exhaust plate, and mask frame; 7. The chamber interior part for a semiconductor manufacturing process according to claim 6.

8. 55 mol % or more and 66 mol % or less of SiO ２ , 5 mol % or more and 16 mol % or less of Al ２ O ３ and 29 mol% to 35 mol% MgO; and quenching the molten composition; The SiO ２ and the Al ２ O ３ The molar ratio of The thermal expansion coefficient is 4.0 x 10 －６ m / (m℃) or more 5.4×10 －６ m / (m ° C.) or less, Manufacturing method for plasma-resistant glass.

9. The melting temperature in the step of melting the composition is 1400°C or more and 1700°C or less. A method for producing the plasma-resistant glass according to claim 8.

10. Melting the plasma-resistant glass of claim 1; Injecting the molten plasma-resistant glass into a mold; and annealing the implanted plasma resistant glass; A method for manufacturing chamber internal parts for semiconductor manufacturing processes.

11. The melting temperature in the step of melting the plasma-resistant glass is 1400°C or more and 1700°C or less. The method for manufacturing a chamber internal part for a semiconductor manufacturing process according to claim 10.

12. The temperature of the annealing step is 400°C or more and 900°C or less. The method for manufacturing a chamber internal part for a semiconductor manufacturing process according to claim 10.

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