Gallium nitride layer manufacturing apparatus and method for manufacturing a gallium nitride layer

Abstract

To prevent supply line for supplying gallium trichloride gas from being blocked.SOLUTION: A formation device 20 includes: a first space 211 arranging metal gallium 220; a second space 212 positioned between the first space 211 and a supply line 310; a first guiding line 231 for guiding chlorine gas to the first space 211; and a second guiding line 232 for guiding the chlorine gas to the second space 212. The second guiding line 232 guides chlorine gas more than the amount of chlorine gas necessary for forming gallium monochloride gas formed by guiding the chlorine gas from the first guiding line 231 into gallium trichloride gas.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a GaN layer manufacturing apparatus and a GaN layer manufacturing method for growing a GaN layer on a seed substrate made of gallium nitride (hereinafter also simply referred to as GaN). [Background technology]

[0002] A GaN layer manufacturing apparatus and manufacturing method for growing a GaN layer on a seed substrate made of GaN using hydride vapor phase epitaxy have been proposed (see, for example, Patent Document 1). Specifically, this manufacturing apparatus includes a growth apparatus on which the seed substrate is placed and on which the GaN layer is grown, and a generation apparatus for generating gallium trichloride gas, which serves as a source gas for growing the GaN layer. The manufacturing apparatus also includes a first supply pipe connecting the growth apparatus and the generation apparatus and supplying the gas generated by the generation apparatus to the growth apparatus, and a second supply pipe for supplying ammonia gas, which serves as a source gas for growing the GaN layer, to the growth apparatus.

[0003] The growth apparatus has a growth vessel in which a seed substrate is placed, and is configured so that gallium trichloride gas generated in the generation apparatus is supplied into the growth vessel via a first supply pipe, and ammonia gas is supplied into the growth vessel via a second supply pipe.

[0004] The generator includes a generating vessel in which metallic gallium is placed. The generating vessel includes a first space in which the metallic gallium is placed and a second space communicating with the first space. The generating vessel also includes a first induction pipe for guiding chlorine gas to the first space and a second induction pipe for guiding chlorine gas to the second space.

[0005] In the generator, when chlorine gas is introduced from the first induction pipe, the metallic gallium reacts with the chlorine gas to generate gallium monochloride gas, as shown in the reaction of Chemical Formula 1 below.

[0006] (Chemical formula 1) Ga + 1 / 2Cl2 → GaCl In addition, in the generator, when chlorine gas is introduced into the generation vessel from the second induction pipe, gallium monochloride gas and chlorine gas react with each other to generate gallium trichloride gas, as shown in the following chemical formula 2.

[0007] (Chemical formula 2)GaCl+Cl2→GaCl3 When gallium trichloride gas is generated in the generator, the generator is heated so that the first space is at about 800 to 900°C and the portion of the second space on the first supply pipe side is at about 150°C. The first supply pipe is also heated to about 150°C.

[0008] In such a GaN layer manufacturing apparatus, gallium trichloride gas and ammonia gas are supplied onto the seed substrate, and a GaN layer is grown by the reaction of Chemical Formula 3 below.

[0009] (Chemical formula 3)GaCl3+NH3→GaN+3HCl [Prior art documents] [Patent documents]

[0010] [Patent Document 1] Patent No. 5787324 Summary of the Invention [Problem to be solved by the invention]

[0011] Gallium monochloride has a higher boiling point than gallium trichloride and is more likely to solidify. Therefore, if gallium monochloride gas remains in the first supply pipe when gallium trichloride gas is supplied into the growth apparatus through the first supply pipe, the gallium monochloride gas may solidify in the first supply pipe, possibly causing blockage inside the first supply pipe.

[0012] In view of the above, it is an object of the present invention to provide a GaN layer manufacturing apparatus and a GaN layer manufacturing method that can prevent clogging of a supply pipe for supplying gallium trichloride gas. [Means for solving the problem]

[0013] Claim 1 to achieve the above object and 3 The GaN layer manufacturing apparatus grows a GaN layer (122) by supplying a gallium-based gas and an ammonia-based gas onto a seed substrate (121) made of GaN, and includes a growth device (10) having a cylindrical growth vessel (100) in which a GaN layer is grown in a hollow portion (101a) that forms a reaction chamber, a base (120) that is disposed within the hollow portion of the growth vessel and on which a seed substrate on which a GaN layer is grown is disposed, a generator (20) that generates gallium trichloride gas as a gallium-based gas, and a gas supply system that connects the generator and the growth device and supplies the gallium trichloride gas generated in the generator. and a supply pipe (310) for supplying gallium gas to the growth apparatus. The generation device has a first space (211) in which metallic gallium (220) is placed, a second space (212) located between the first space and the supply pipe, a first induction pipe (231) for guiding chlorine gas to the first space, and a second induction pipe (232) for guiding chlorine gas to the second space, and the second induction pipe is configured to guide an amount of chlorine gas that is greater than the amount of chlorine gas required to convert gallium monochloride gas, which is generated by guiding chlorine gas from the first induction pipe, into gallium trichloride gas. In claim 1, the generator is provided with a third induction pipe (233) for guiding chlorine gas to the second space, at a portion closer to the supply pipe than the portion where chlorine gas is guided from the second induction pipe. In claim 3, the growth apparatus is provided with a supply pipe (340) for supplying hydrogen gas.

[0014] This makes it possible to prevent gallium monochloride gas from remaining, and to prevent the gallium monochloride gas from solidifying and clogging the supply pipe, while allowing the GaN layer to grow.

[0015] Claim 4 is a method for producing a GaN layer using the GaN layer production apparatus according to claim 1, comprising: preparing the GaN layer production apparatus according to claim 1; and growing a GaN layer by generating gallium trichloride gas in a generation device, wherein the generation of gallium trichloride gas includes inducing chlorine gas from a first induction pipe and reacting the chlorine gas with metallic gallium to generate gallium monochloride gas; and the third induction pipe and inducing chlorine gas from the first induction pipe, and reacting the gallium monochloride gas with the chlorine gas to generate gallium trichloride gas. By inducing chlorine gas from the second induction pipe, an amount of chlorine gas that is greater than the amount of chlorine gas required to convert the gallium monochloride gas into gallium trichloride gas is derived. Claim 5 is a method for manufacturing a GaN layer using the GaN layer manufacturing apparatus according to claim 3, comprising: preparing the GaN layer manufacturing apparatus according to claim 3; and generating gallium trichloride gas in a generation apparatus to grow a gallium nitride layer; generating gallium trichloride gas includes inducing chlorine gas from a first induction pipe and reacting the chlorine gas with metallic gallium to generate gallium monochloride gas; and inducing chlorine gas from a second induction pipe and reacting the gallium monochloride gas with the chlorine gas to generate gallium trichloride gas; in inducing chlorine gas from the second induction pipe, inducing an amount of chlorine gas in excess of the amount of chlorine gas required to convert the gallium monochloride gas into gallium trichloride gas; and growing the gallium nitride layer includes growing the gallium nitride layer while inducing hydrogen gas into the growth apparatus.

[0016] This makes it possible to prevent gallium monochloride gas from remaining, and to prevent the gallium monochloride gas from solidifying and clogging the supply pipe, while allowing the GaN layer to grow.

[0017] The reference symbols in parentheses attached to each component indicate an example of the correspondence between the component and the specific components described in the embodiments described below. [Brief explanation of the drawings]

[0018] [Figure 1] 1 is a cross-sectional view schematically illustrating a GaN layer manufacturing apparatus according to a first embodiment. [Figure 2] FIG. 10 is a cross-sectional view schematically illustrating a GaN layer manufacturing apparatus according to a second embodiment. [Figure 3] FIG. 10 is a cross-sectional view schematically illustrating a GaN layer manufacturing apparatus according to a third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0019] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the following embodiments, parts that are identical or equivalent to each other will be denoted by the same reference numerals.

[0020] (First embodiment) The first embodiment will be described with reference to the drawings. First, the configuration of a GaN layer manufacturing apparatus will be described with reference to Fig. 1. The GaN layer manufacturing apparatus shown in Fig. 1 is installed with the up-down direction of the paper on which Fig. 1 is drawn as the top-to-bottom direction, and grows a GaN layer 122 on a seed substrate 121.

[0021] 1, the GaN layer manufacturing apparatus includes a growth apparatus 10 that grows a GaN layer 122, and a generator 20 that generates gallium trichloride gas as a source gas for growing the GaN layer 122. The GaN layer manufacturing apparatus also includes first to third supply pipes 310 to 330 that supply various gases for growing the GaN layer 122 to the growth apparatus 10.

[0022] The growth apparatus 10 includes a growth vessel 100, a heating vessel 110, a base 120, a shaft 131, a rotation displacement mechanism 132, a heating device 140, and the like.

[0023] The growth vessel 100 includes a cylindrical tube portion 101 having a hollow portion 101a that forms a reaction chamber, and a first lid portion 102 and a second lid portion 103 that are provided on the tube portion 101 and close the hollow portion 101a. The tube portion 101 is made of quartz glass or the like and is cylindrical in this embodiment. The first lid portion 102 and the second lid portion 103 are made of stainless steel or the like, with the first lid portion 102 provided at an end of the tube portion 101 that is the top side, and the second lid portion 103 provided at an end of the tube portion 101 that is the bottom side. The growth vessel 100 has a structure in which other components for growing the GaN layer 122 are disposed within the hollow portion 101a, and the pressure in the hollow portion 101a can be reduced by evacuating it.

[0024] The growth vessel 100 is also provided with first to third supply pipes 310 to 330 that supply various gases for growing the GaN layer 122. In this embodiment, the first lid 102 is provided with the first to third supply pipes 310 to 330. Specifically, the first lid 102 is provided with a first supply pipe 310 that supplies gallium trichloride gas into the growth vessel 100 as a gallium-based gas for growing the GaN layer 122 produced in the generation apparatus 20. The first lid 102 is provided with a second supply pipe 320 that supplies ammonia gas into the growth vessel 100 as an ammonia-based gas for growing the GaN layer 122 together with the gallium trichloride gas. The first lid 102 is provided with a third supply pipe 330 that supplies nitrogen gas as a carrier gas into the growth vessel 100. In this embodiment, chlorine gas may be supplied to the first supply pipe 310, as will be described later. For this reason, the first supply pipe 310 is made of, for example, a pipe that is coated with fluorine to provide corrosion resistance.

[0025] In this embodiment, the first to third supply pipes 310 to 330 are arranged such that one end thereof is located inside the heating container 110 described below. However, the third supply pipe 330 is arranged such that one end thereof is located closer to the first lid 102 than one end of the first supply pipe 310 and the second supply pipe 320. In other words, the first to third supply pipes 310 to 330 are arranged such that the gas supplied from the first and second supply pipes 310 and 320 is easily caused to flow downward (i.e., toward the seed substrate 121 described below) by the gas supplied from the third supply pipe 330.

[0026] The first supply pipe 310 has one end on the growth apparatus 10 side and the other end opposite the growth apparatus 20. In other words, the first supply pipe 310 is arranged to connect the growth apparatus 10 and the generation apparatus 20. The first supply pipe 310 has a smaller cross-sectional area normal to the gas flow direction than the generation vessel 200 described below. Although not shown, the second supply pipe 320 and the third supply pipe 330 have one end on the growth apparatus 10 and the other end opposite the growth apparatus 10 connected to the respective gas supply sources.

[0027] Furthermore, growth vessel 100 is provided with outlet 104 for discharging exhaust gases including unreacted gases that did not contribute to the growth of GaN layer 122. In this embodiment, outlet 104 is provided in the portion of growth vessel 100 on the second lid 103 side.

[0028] The heating container 110 is made of, for example, alumina, zirconia, pyrolytic carbon, graphite, or the like, and is formed in a cylindrical shape having a hollow portion 110a. The heating container 110 is provided on the first lid portion 102 so that various gases from the first to third supply pipes 310 to 330 are supplied into the hollow portion 110a.

[0029] Pedestal 120 is a component on which seed substrate 121 made of GaN for growing GaN layer 122 is placed, and is located below heating vessel 110. Pedestal 120 is made of a material that is resistant to thermal etching, such as graphite coated with a high-melting-point metal carbide such as PbN, SiC, TaC, or NbC. Seed substrate 121 is attached to one surface 120a of pedestal 120 that faces first to third supply pipes 310 to 330, and GaN layer 122 is grown on the surface of seed substrate 121.

[0030] In this embodiment, as will be described later, GaN layer 122 is grown by supplying gallium trichloride gas and ammonia gas onto seed substrate 121. It has been reported that when gallium trichloride gas is used to grow GaN layer 122, GaN layer 122 grows easily when the growth surface of seed substrate 121 is the nitrogen face, but grows poorly when the growth surface of seed substrate 121 is the gallium face. Therefore, in this embodiment, seed substrate 121 is positioned so that the growth surface of GaN layer 122 is the nitrogen face. In other words, seed substrate 121 is positioned so that the surface opposite to pedestal 120 is the nitrogen face.

[0031] A shaft 131 is connected to the surface of the pedestal 120 opposite to the surface on which the seed substrate 121 is placed. The pedestal 120 is rotated in accordance with the rotation of the shaft 131, and is displaced together with the shaft 131 as the shaft 131 displaces along the axial direction of the growth vessel 100 (i.e., the vertical direction in the plane of the page in FIG. 1 ). The shaft 131, like the pedestal 120, is made of a material that is resistant to thermal etching, such as graphite coated on its surface with a high-melting-point metal carbide such as PbN, SiC, TaC, or NbC.

[0032] Rotational displacement mechanism 132 includes gears, a motor, and the like, and is a member connected to shaft 131 to rotate and displace shaft 131. When rotating shaft 131, rotational displacement mechanism 132 displaces shaft 131 (i.e., seed substrate 121) so that the temperature of the growth surface of GaN layer 122 becomes a temperature suitable for growth as GaN layer 122 grows. When growing GaN layer 122, rotational displacement mechanism 132 of this embodiment rotates shaft 131 so that pedestal 120 rotates at 200 revolutions per minute or more, although this is not a particular limitation.

[0033] Heating device 140 heats the inside of heating vessel 110 and growth vessel 100, and is configured with a heating coil such as an induction heating coil or a direct heating coil, and is arranged to surround growth vessel 100. In this embodiment, heating device 140 is driven so that the temperature around seed substrate 121 reaches approximately 1000 to 1300°C and the temperature inside heating vessel 110 reaches 700°C or higher when growing GaN layer 122.

[0034] The generation device 20 includes a generation vessel 200, a heating device 240, and the like. The generation vessel 200 includes a cylindrical tube portion 201 having a hollow portion 201a, and a first lid portion 202 and a second lid portion 203 provided on the tube portion 201 to close the hollow portion 201a. The tube portion 201 is made of quartz glass or the like and is cylindrical in this embodiment. The first lid portion 202 and the second lid portion 203 are made of SUS or the like. The first lid portion 202 is provided at the end of the tube portion 201 opposite to the side to which the first supply pipe 310 is connected, and the second lid portion 203 is provided at the end of the tube portion 201 to which the first supply pipe 310 is connected. Similar to the growth vessel 100, the generation vessel 200 is configured so that the pressure in the hollow portion 201a can be reduced by vacuum pumping.

[0035] The generating vessel 200 is provided with a partition wall 213 that partitions the hollow portion 201a into a first space 211 on the first lid portion 202 side and a second space 212 on the second lid portion 203 side. However, this partition wall 213 is formed so as to maintain communication between the first space 211 and the second space 212. In other words, the partition wall 213 is provided so as not to completely partition the first space 211 and the second space 212.

[0036] Metallic gallium 220 is disposed in the first space 211. In this embodiment, the second space 212 is provided with a partition wall 214 for increasing the wall surface that comes into contact with the gallium monochloride gas and chlorine gas generated in the first space 211, as will be described later.

[0037] The generation vessel 200 is also provided with a first induction pipe 231 and a second induction pipe 232 that induce chlorine gas into the generation vessel 200. In this embodiment, the first induction pipe 231 is provided in the first lid portion 202 so as to induce chlorine gas into the first space 211. The second induction pipe 232 is provided in the tubular portion 201 so as to induce chlorine gas into the second space 212. In this embodiment, nitrogen gas as a carrier gas is also introduced into the generation vessel 200 from the first induction pipe 231 and the second induction pipe 232.

[0038] The heating device 240 heats the inside of the generating vessel 200, and is configured, for example, by a resistance heater or the like, and is arranged around the generating vessel 200. In this embodiment, the heating device 240 is arranged to surround the portion of the generating vessel 200 that constitutes the first space 211. When growing the GaN layer 122, the heating device 240 is driven so that the first space 211 is at a temperature of approximately 800 to 900°C, and the temperature of the second space 212 on the second lid portion 203 side is at approximately 150°C by heat transfer from the first space 211. Note that, since the second space 212 in this embodiment is heated by heat transfer from the first space 211, a temperature gradient is created in which the temperature gradually decreases from the portion on the first space 211 side toward the second lid portion 203 side.

[0039] In generation device 20, the other end of first supply pipe 310 is provided on second lid 203. Although not shown, a heating device is also arranged around first supply pipe 310. When growing GaN layer 122, first supply pipe 310 is heated to, for example, about 150°C.

[0040] The above is the configuration of the GaN layer manufacturing apparatus in this embodiment. Next, a method for manufacturing the GaN layer 122 using the above GaN layer manufacturing apparatus will be described.

[0041] First, the above-described GaN layer manufacturing apparatus is prepared, and seed substrate 121 is placed on one surface 120a of pedestal 120. In this embodiment, as described above, seed substrate 121 is placed so that the growth surface of GaN layer 122 is the nitrogen face. Then, rotational displacement mechanism 132 rotates pedestal 120 via shaft 131, and adjusts the position of pedestal 120. Note that while GaN layer 122 is growing, the height of the pedestal is adjusted in accordance with the growth rate of GaN layer 122. This keeps the height of the growth surface of the GaN layer approximately constant, making it possible to effectively control the temperature distribution of the growth surface temperature.

[0042] Next, the heating devices 140 and 240 are driven. Specifically, the heating device 140 is driven so that the temperature around the seed substrate 121 placed in the growth vessel 100 reaches approximately 1000 to 1300°C and the temperature inside the heating vessel 110 reaches 700°C or higher. The heating device 240 is also driven so that the first space 211 in the generation vessel 200 reaches approximately 800 to 900°C and the portion of the second space 212 on the second lid 203 side reaches approximately 150°C. Furthermore, although not shown, the heating devices arranged around the first supply pipe 310 are driven so that the first supply pipe 310 also reaches approximately 150°C.

[0043] Next, chlorine gas and nitrogen gas as a carrier gas are introduced into the generation apparatus 20 from the first introduction pipe 231 and the second introduction pipe 232. As a result, in the first space 211, as shown in the above chemical formula 1, the metal gallium 220 and the chlorine gas react with each other to generate gallium monochloride gas. Furthermore, as the gallium monochloride gas flows into the second space 212, the gallium monochloride gas reacts with the chlorine gas introduced into the second space 212 to generate gallium trichloride gas, as shown in the above chemical formula 2. The gallium trichloride gas is then supplied to the growth apparatus 10 via the first supply pipe 310. In this case, the second space 212 of this embodiment is provided with a partition wall 214. Therefore, the gas introduced into the second space 212 is more likely to collide with the partition wall 214, which is a high-temperature portion, and the flow distance is longer. This prevents gallium monochloride gas from remaining without reacting with chlorine gas.

[0044] In this embodiment, chlorine gas is guided from the second induction pipe 232 in an amount greater than or equal to the amount necessary to convert all of the gallium monochloride produced in the first space 211 into gallium trichloride. For example, when 100 sccm of chlorine gas is guided from the first induction pipe 231, 200 sccm or more of chlorine gas is guided from the second induction pipe 232. This makes it possible to prevent gallium monochloride gas from remaining in the second space 212. Note that the nitrogen gas guided as a carrier gas from the first induction pipe 231 and the second induction pipe 232 is, for example, about 1 slm.

[0045] Ammonia gas is then supplied to growth vessel 100 through second supply pipe 320, and nitrogen gas is supplied to growth vessel 100 through third supply pipe 330. As a result, ammonia gas and gallium trichloride gas flow and are supplied to seed substrate 121, causing GaN layer 122 to grow on the surface of seed substrate 121. Note that the supply of ammonia gas is preferably initiated after heating device 140 has been driven, when the ambient temperature of seed substrate 121 is 500°C or lower, in order to prevent nitrogen loss. Ammonia gas is supplied at, for example, about 1 to 5 slm. Nitrogen gas as a carrier gas is supplied at, for example, about 1 to 10 slm.

[0046] According to the present embodiment described above, in generator 20, chlorine gas in an amount equal to or greater than the amount necessary to convert all of the gallium monochloride gas generated in first space 211 into gallium trichloride gas is guided from second induction pipe 232. This makes it possible to prevent gallium monochloride gas from remaining, and to prevent the gallium monochloride gas from solidifying and clogging first supply pipe 310.

[0047] (Second embodiment) A second embodiment will be described. This embodiment differs from the first embodiment in that a third induction pipe is added to the generation device 20. As the rest of the configuration is the same as the first embodiment, a description thereof will be omitted here.

[0048] 2, the generator 20 is provided with a third induction pipe 233. Specifically, the third induction pipe 233 is provided in the cylindrical portion 201 so as to be able to induce chlorine gas and nitrogen gas into the second space 212. More specifically, the third induction pipe 233 is provided closer to the second lid portion 203 than the second induction pipe 232, and is disposed so as to be able to induce chlorine gas near the connection portion between the generator 20 and the first supply pipe 310.

[0049] The above is the configuration of the GaN layer manufacturing apparatus in this embodiment. Next, a method for manufacturing the GaN layer 122 using the above GaN layer manufacturing apparatus will be described.

[0050] In this embodiment, when gallium trichloride gas is generated in the generator 20, chlorine gas is also guided from the third induction pipe 233. For example, when 100 sccm of chlorine gas is guided from the first induction pipe 231, 200 sccm or more of chlorine gas is guided from the second induction pipe 232, and approximately 20 sccm of chlorine gas is guided from the third induction pipe 233. This further prevents gallium monochloride gas from remaining in the second space 212. In other words, it is possible to further prevent gallium monochloride gas from being guided to the first supply pipe 310.

[0051] According to the present embodiment described above, in the generator 20, chlorine gas in an amount greater than or equal to the amount necessary to convert all of the gallium monochloride gas into gallium trichloride gas is guided from the second induction pipe 232. Therefore, the same effects as those of the first embodiment can be obtained.

[0052] (1) In this embodiment, chlorine gas is also guided from the third guide pipe 233. This further prevents gallium monochloride gas from being guided into the first supply pipe 310, and further prevents the first supply pipe 310 from being blocked.

[0053] (Third embodiment) A third embodiment will be described. This embodiment differs from the first embodiment in that a fourth supply pipe is provided in the growth apparatus 10. As the rest of the configuration is the same as the first embodiment, a description thereof will be omitted here.

[0054] First, in the GaN layer manufacturing apparatus as described above, a large amount of chlorine gas is introduced into second space 212 of generator 20, thereby preventing clogging of first supply pipe 310. However, by introducing a large amount of chlorine gas into second space 212 of generator 20, chlorine gas may also be supplied from generator 20 to growth apparatus 10. In this case, the chlorine gas may function as an etching gas, and GaN layer 122 may be etched.

[0055] 3, the growth apparatus 10 is provided with a fourth supply pipe 340 for supplying hydrogen gas. Specifically, one end of the fourth supply pipe 340 is located inside the heating vessel 110 and is disposed at approximately the same position as the third supply pipe 330, and the other end is connected to a gas supply source (not shown).

[0056] The above is the configuration of the GaN layer manufacturing apparatus in this embodiment. Next, a method for manufacturing the GaN layer 122 using the above GaN layer manufacturing apparatus will be described.

[0057] In this embodiment, when growing the GaN layer 122, hydrogen gas is introduced into the growth apparatus 10 from the fourth supply pipe 340. As a result, chlorine gas that may be supplied from the first supply pipe 310 reacts with the hydrogen gas as shown in the following chemical formula 4 to form hydrogen chloride gas, which has a weaker etching property than chlorine gas.

[0058] (Chem.4)1 / 2Cl2+H2→HCl Therefore, it is possible to prevent the GaN layer 122 from being etched by the chlorine gas that may be supplied from the first supply pipe 310 (that is, the generator 20).

[0059] When reacting chlorine gas with hydrogen gas, it is preferable to react in a portion where the ambient temperature is 700° C. or higher. For this reason, in this embodiment, the temperature inside the heating container 110 is set to 700° C. or higher. Furthermore, when 200 sccm of chlorine gas is introduced from the second introduction pipe 232 to the second space 212, the hydrogen gas supplied from the fourth supply pipe 340 may be approximately 50 to 500 sccm.

[0060] Furthermore, by supplying hydrogen gas into the growth apparatus 10, the hydrogen gas also reacts with the gallium trichloride gas supplied from the first supply pipe 310 to produce gallium monochloride gas, as shown in Chemical Formula 5 below.

[0061] (C5)GaCl3+H2→GaCl+2HCl Therefore, in this embodiment, ammonia gas and gallium monochloride gas are flowed and supplied to seed substrate 121, thereby growing GaN layer 122 on the surface of seed substrate 121, as shown in Chemical Formula 6 below.

[0062] (C6)GaCl+NH3→GaN+HCl+H2 It has been reported that when gallium monochloride gas is used to grow GaN layer 122, GaN layer 122 grows easily whether the growth surface of seed substrate 121 is the nitrogen face or the gallium face. Therefore, in this embodiment, a desired face of seed substrate 121 can be selected as the growth surface of GaN layer 122.

[0063] According to the present embodiment described above, in the generator 20, chlorine gas in an amount greater than or equal to the amount necessary to convert all of the gallium monochloride gas into gallium trichloride gas is guided from the second induction pipe 232. Therefore, the same effects as those of the first embodiment can be obtained.

[0064] (1) In this embodiment, hydrogen gas is supplied into growth apparatus 10. This prevents chlorine gas, which may be supplied from first supply pipe 310 into growth apparatus 10, from reaching GaN layer 122, thereby preventing etching of GaN layer 122. Furthermore, gallium trichloride gas, which is supplied from first supply pipe 310 into growth apparatus 10, reacts with hydrogen gas to form gallium monochloride gas, and GaN layer 122 is grown by the reaction between gallium monochloride and ammonia gas. This allows a desired surface to be selected as the growth surface of GaN layer 122.

[0065] (Other embodiments) Although the present disclosure has been described with reference to the embodiments, it is understood that the present disclosure is not limited to the embodiments or structures. The present disclosure also encompasses various modifications and modifications within the scope of equivalents. In addition, various combinations and forms, as well as other combinations and forms including only one element, more than one element, or less than one element, are also within the scope and spirit of the present disclosure.

[0066] In each of the above embodiments, the configuration of the growth apparatus 10 may be modified as appropriate. For example, in each of the above embodiments, an example has been described in which the rotation / displacement mechanism 132 rotates and displaces the pedestal 120, but the pedestal 120 may only be rotated without being displaced. In addition, the outlet 104 may be disposed on the first lid 102 side of the growth vessel 100.

[0067] In addition, in each of the above embodiments, the second space 212 does not necessarily have to be provided with the partition wall 214. The above-described embodiments may be combined. For example, the second embodiment may be combined with the third embodiment, and a third guide pipe 233 may be provided. [Explanation of symbols]

[0068] 10 Growth equipment 20 Generator 101a Hollow part 100 growing containers 120 pedestal 121 species substrate 122 GaN layer 211 1st space 212 Second space 220 Metallic Gallium 231 First induction pipe 232 Second induction pipe 310 Supply piping

Claims

1. A gallium nitride layer manufacturing apparatus for growing a gallium nitride layer (122) by supplying a gallium-based gas and an ammonia-based gas onto a seed substrate (121) made of gallium nitride, a growth apparatus (10) having a cylindrical growth vessel (100) in which the gallium nitride layer is grown in a hollow portion (101a) that forms a reaction chamber; a pedestal (120) disposed within the hollow portion of the growth chamber, on which the seed substrate on which the gallium nitride layer is grown is placed; a generator (20) for generating gallium trichloride gas as the gallium-based gas; a supply pipe (310) connecting the generator and the growth apparatus and supplying the gallium trichloride gas generated in the generator to the growth apparatus; The generating device has a first space (211) in which metallic gallium (220) is placed, a second space (212) located between the first space and the supply pipe, a first induction pipe (231) that induces chlorine gas into the first space, and a second induction pipe (232) that induces chlorine gas into the second space, the second induction pipe is configured to induce an amount of chlorine gas that is greater than the amount of chlorine gas required to convert the gallium monochloride gas generated by guiding the chlorine gas from the first induction pipe into the gallium trichloride gas, The generation device is a gallium nitride layer manufacturing apparatus, and is provided with a third induction pipe (233) for guiding chlorine gas to the second space, at a portion closer to the supply pipe than the portion where chlorine gas is induced from the second induction pipe.

2. 2. The gallium nitride layer manufacturing apparatus according to claim 1, wherein the growth apparatus is provided with a supply pipe (340) for supplying hydrogen gas.

3. A gallium nitride layer manufacturing apparatus for growing a gallium nitride layer (122) by supplying a gallium-based gas and an ammonia-based gas onto a seed substrate (121) made of gallium nitride, a growth apparatus (10) having a cylindrical growth vessel (100) in which the gallium nitride layer is grown in a hollow portion (101a) that forms a reaction chamber; a pedestal (120) disposed within the hollow portion of the growth chamber, on which the seed substrate on which the gallium nitride layer is grown is placed; a generator (20) for generating gallium trichloride gas as the gallium-based gas; a supply pipe (310) connecting the generator and the growth apparatus and supplying the gallium trichloride gas generated in the generator to the growth apparatus; The generating device has a first space (211) in which metallic gallium (220) is placed, a second space (212) located between the first space and the supply pipe, a first induction pipe (231) that induces chlorine gas into the first space, and a second induction pipe (232) that induces chlorine gas into the second space, the second induction pipe is configured to induce an amount of chlorine gas that is greater than the amount of chlorine gas required to convert the gallium monochloride gas generated by guiding the chlorine gas from the first induction pipe into the gallium trichloride gas, The growth device is provided with a supply pipe (340) for supplying hydrogen gas.

4. A method for manufacturing a gallium nitride layer, comprising: growing a gallium nitride layer (122) on a seed substrate (121) made of gallium nitride by supplying a gallium-based gas and an ammonia-based gas; a growth apparatus (10) having a cylindrical growth vessel (100) in which the gallium nitride layer is grown in a hollow portion (101a) that forms a reaction chamber; a pedestal (120) disposed within the hollow portion of the growth chamber, on which the seed substrate on which the gallium nitride layer is grown is placed; a generator (20) for generating gallium trichloride gas as the gallium-based gas; a supply pipe (310) connecting the generator and the growth apparatus and supplying the gallium trichloride gas generated in the generator to the growth apparatus; a gallium nitride layer production apparatus including the generating device, the gallium nitride layer production apparatus having a first space (211) in which metallic gallium (220) is placed, a second space (212) located between the first space and the supply pipe, a first induction pipe (231) for guiding chlorine gas to the first space, a second induction pipe (232) for guiding chlorine gas to the second space, and a third induction pipe (233) provided at a portion closer to the supply pipe than a portion where chlorine gas is guided from the second induction pipe and for guiding chlorine gas to the second space; generating the gallium trichloride gas in the generator and growing the gallium nitride layer; In generating the gallium trichloride gas, the chlorine gas is guided from the first induction pipe, and the metallic gallium and the chlorine gas are reacted to generate the gallium monochloride gas; and the chlorine gas is guided from the second induction pipe and the third induction pipe, and the gallium monochloride gas and the chlorine gas are reacted to generate the gallium trichloride gas; In the method for manufacturing a gallium nitride layer, the amount of chlorine gas induced from the second induction pipe is greater than the amount of chlorine gas required to convert the gallium monochloride gas into the gallium trichloride gas.

5. A method for manufacturing a gallium nitride layer, comprising: growing a gallium nitride layer (122) on a seed substrate (121) made of gallium nitride by supplying a gallium-based gas and an ammonia-based gas; a growth apparatus (10) having a cylindrical growth vessel (100) in which the gallium nitride layer is grown in a hollow portion (101a) constituting a reaction chamber, the growth vessel (100) being equipped with a supply pipe (340) for supplying hydrogen gas; a pedestal (120) disposed within the hollow portion of the growth chamber, on which the seed substrate on which the gallium nitride layer is grown is placed; a generator (20) for generating gallium trichloride gas as the gallium-based gas; a supply pipe (310) connecting the generator and the growth apparatus and supplying the gallium trichloride gas generated in the generator to the growth apparatus; The generating device includes a gallium nitride layer manufacturing apparatus having a first space (211) in which metallic gallium (220) is placed, a second space (212) located between the first space and the supply pipe, a first induction pipe (231) for guiding chlorine gas to the first space, and a second induction pipe (232) for guiding chlorine gas to the second space; generating the gallium trichloride gas in the generator and growing the gallium nitride layer; In generating the gallium trichloride gas, the chlorine gas is guided from the first induction pipe and reacted with the metallic gallium to generate gallium monochloride gas, and the chlorine gas is guided from the second induction pipe and reacted with the gallium monochloride gas to generate the gallium trichloride gas, Inducing the chlorine gas from the second induction pipe induces an amount of chlorine gas that is greater than the amount of chlorine gas required to convert the gallium monochloride gas into the gallium trichloride gas; In the method for manufacturing a gallium nitride layer, the growing of the gallium nitride layer comprises growing the gallium nitride layer while introducing the hydrogen gas into the growth apparatus.

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