Holder and vapor phase growth apparatus

Abstract

A holder according to an embodiment of the present invention includes a part having non-oriented polycrystalline 3C-SiC on a surface, and a substrate can be loaded on the holder.

Description

[Technical Field]

[0001] The present invention relates to a substrate holder used in a vapor phase growth apparatus that supplies gas to the surface of a substrate to form a film, and to the vapor phase growth apparatus. [Background technology]

[0002] One method for forming high-quality semiconductor films is epitaxial growth, which forms a single-crystal film on the surface of a substrate by vapor phase growth. In a vapor phase growth apparatus using epitaxial growth, the substrate is placed on a holder in a chamber maintained at normal or reduced pressure.

[0003] Then, while the substrate is heated, a process gas containing the raw material for the semiconductor film is supplied to the chamber, where a chemical reaction of the process gas occurs on the surface of the substrate, forming an epitaxial single crystal film on the surface of the substrate.

[0004] After an epitaxial single crystal film is formed on the surface of a substrate, the holder on which the substrate is placed may be significantly deformed, which may result in problems such as damage to the holder or errors in the holder's transportation. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2011-243710 Summary of the Invention [Problem to be solved by the invention]

[0006] The problem to be solved by the present invention is to provide a holder that can suppress deformation. [Means for solving the problem]

[0007] A holder according to one embodiment of the present invention includes a portion having non-oriented polycrystalline 3C-SiC on its surface, and is capable of supporting a substrate.

[0008] A vapor phase growth apparatus according to one aspect of the present invention includes the holder according to the above aspect. [Effects of the Invention]

[0009] According to the present invention, a holder and a vapor phase growth apparatus capable of suppressing deformation can be realized. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a schematic cross-sectional view of a vapor phase growth apparatus according to a first embodiment. [Figure 2] FIG. 2 is a schematic view of a holder according to the first embodiment. [Figure 3] FIG. 6 is a schematic view of a holder according to a modified example of the first embodiment. [Figure 4] 4A and 4B are diagrams showing out-of-plane XRD measurement results of annular members according to the first embodiment and a comparative example. [Figure 5] 10A and 10B are diagrams showing the results of Raman spectroscopy measurements of a silicon carbide film formed on the surface of an annular member of a comparative example. [Figure 6] FIG. 4 is a diagram showing the results of Raman spectroscopy measurement of a silicon carbide film formed on the surface of the annular member according to the first embodiment. [Figure 7] FIG. 6 is a schematic view of a holder according to a second embodiment. [Figure 8] FIG. 10 is a schematic view of a holder according to a modified example of the second embodiment. [Figure 9] FIG. 10 is a schematic view of a holder according to a third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0011] Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

[0012] In this specification, the same or similar components may be denoted by the same reference numerals.

[0013] In this specification, the direction of gravity when the vapor deposition apparatus is set up so that a film can be formed is defined as "down," and the opposite direction is defined as "up." Therefore, "lower" means a position in the direction of gravity relative to a reference, and "lower" means the direction of gravity relative to a reference. "Upper" means a position in the opposite direction to the direction of gravity relative to a reference, and "upper" means the opposite direction to the direction of gravity relative to a reference. Furthermore, "vertical direction" means the direction of gravity.

[0014] In this specification, the term "process gas" is a general term for gases used to form a film, and is a concept that includes, for example, source gas, assist gas, dopant gas, carrier gas, and mixtures thereof.

[0015] (First embodiment) The holder of the first embodiment includes a portion having non-oriented polycrystalline 3C-SiC on its surface and is capable of supporting a substrate. The vapor phase growth apparatus of the first embodiment also includes a holder having a portion having non-oriented polycrystalline 3C-SiC on its surface and is capable of supporting a substrate.

[0016] 1 is a schematic cross-sectional view of a vapor phase growth apparatus according to the first embodiment. The vapor phase growth apparatus 100 according to the first embodiment is, for example, a single-wafer epitaxial growth apparatus that epitaxially grows a single-crystal silicon carbide film (SiC film) on the surface of a single-crystal silicon carbide substrate.

[0017] The vapor phase growth apparatus 100 of the first embodiment includes a chamber 10 and a buffer chamber 13. The chamber 10 includes a susceptor 14 (holder), a rotor 16, a rotation shaft 18, a rotation drive mechanism 20, a first heater 22, a reflector 28, a support column 30, a fixed base 32, a fixed shaft 34, a hood 40, a second heater 42, a gas exhaust port 44, and a gas conduit 53. The buffer chamber 13 includes a partition plate 39 and a gas supply port 85.

[0018] The chamber 10 is made of, for example, stainless steel. The chamber 10 has a cylindrical wall. Within the chamber 10, a single-crystal silicon carbide film is formed on the surface of a wafer W. The wafer W is an example of a substrate. The wafer W is, for example, a semiconductor wafer. The wafer W is, for example, a single-crystal silicon carbide wafer.

[0019] The susceptor 14 is provided in the chamber 10. A wafer W can be placed on the susceptor 14. The susceptor 14 is an example of a holder.

[0020] The susceptor 14 is formed of a highly heat-resistant material such as silicon carbide, graphite, tantalum carbide, or graphite coated with pyrolytic graphite or the like.

[0021] The susceptor 14 is placed on top of a rotor 16. The rotor 16 is fixed to a rotation shaft 18. The susceptor 14 is indirectly fixed to the rotation shaft 18.

[0022] The rotary shaft 18 can be rotated by a rotary drive mechanism 20. By rotating the rotary shaft 18, the susceptor 14 can be rotated. By rotating the susceptor 14, the wafer W placed on the susceptor 14 can be rotated.

[0023] The rotation drive mechanism 20 can rotate the wafer W at a rotation speed of, for example, 1 rpm or more and 3000 rpm or less. The rotation drive mechanism 20 is composed of, for example, a motor and a bearing.

[0024] The first heater 22 is provided below the susceptor 14. The first heater 22 is provided inside the rotating body 16. The first heater 22 heats the wafer W placed on the susceptor 14 from below. The first heater 22 is, for example, a resistance heater. The first heater 22 is, for example, in the shape of a disk having a comb-shaped pattern.

[0025] The reflector 28 is provided below the first heater 22. The first heater 22 is provided between the reflector 28 and the susceptor 14.

[0026] The reflector 28 reflects heat radiated downward from the first heater 22, thereby improving the heating efficiency of the wafer W. The reflector 28 also prevents members below the reflector 28 from being heated. The reflector 28 has, for example, a disk shape. The reflector 28 is formed of a highly heat-resistant material, for example, silicon carbide, graphite, tantalum carbide, graphite coated with pyrolytic graphite, or the like.

[0027] The reflector 28 is fixed to a fixed base 32 by, for example, a plurality of support columns 30. The fixed base 32 is supported by, for example, a fixed shaft 34.

[0028] Lift pins (not shown) are provided inside the rotating body 16 to detach the susceptor 14 from the rotating body 16. The lift pins penetrate, for example, the reflector 28 and the first heater 22.

[0029] The second heater 42 is provided between the hood 40 and the inner wall of the chamber 10. The second heater 42 is located above the susceptor 14.

[0030] The second heater 42 heats the wafer W placed on the susceptor 14 from above. By heating the wafer W with the second heater 42 in addition to the first heater 22, the wafer W can be easily heated to a temperature required for growing a silicon carbide film, for example, a temperature of 1500°C or higher. The second heater 42 is, for example, a resistance heater.

[0031] The hood 40 has, for example, a cylindrical shape. The hood 40 has a function of preventing the first process gas G1 and the second process gas G2 from contacting the second heater 42. The hood 40 is formed of a highly heat-resistant material, for example, graphite or graphite coated with silicon carbide.

[0032] The gas exhaust port 44 is provided at the bottom of the chamber 10. The gas exhaust port 44 exhausts by-products generated after the source gas reacts on the surface of the wafer W and excess process gas to the outside of the chamber 10. The gas exhaust port 44 is connected to, for example, a vacuum pump (not shown).

[0033] The chamber 10 is also provided with a susceptor loading / unloading port and a gate valve (not shown). The susceptor loading / unloading port and the gate valve allow the susceptor 14 on which the wafer W is placed to be loaded into the chamber 10 and unloaded from the chamber 10.

[0034] The buffer chamber 13 is provided in the upper part of the chamber 10. A gas supply port 85 for introducing a process gas G0 is provided in the buffer chamber 13. The process gas G0 introduced from the gas supply port 85 fills the buffer chamber 13.

[0035] The process gas G0 is a mixed gas containing, for example, a silicon (Si) source gas, a carbon (C) source gas, an n-type impurity dopant gas, a p-type impurity dopant gas, an assist gas for suppressing silicon clustering, and a carrier gas. The silicon source gas is, for example, silane gas (SiH4). The carbon source gas is, for example, propane gas (C3H8). The n-type impurity dopant gas is, for example, nitrogen gas (N2). The p-type impurity dopant gas is, for example, trimethylaluminum gas (TMA). The assist gas is, for example, hydrogen chloride gas (HCl). The carrier gas is, for example, argon gas (Ar) or hydrogen gas (H2).

[0036] The plurality of gas conduits 53 are provided between the buffer chamber 13 and the chamber 10. The gas conduits 53 extend in a first direction from the buffer chamber 13 toward the chamber 10. The plurality of gas conduits 53 supply the process gas G0 from the buffer chamber 13 to the chamber 10.

[0037] 2A and 2B are schematic diagrams of the holder of the first embodiment, in which Fig. 2A is a top view and Fig. 2B is a cross-sectional view taken along line AA' in Fig. 2A.

[0038] The susceptor 14 includes an inner region 50 and an outer region 52. The outer region 52 surrounds the inner region 50. When a wafer W is placed on the susceptor 14, the outer region 52 surrounds the wafer W.

[0039] The inner region 50 is disc-shaped, and the outer region 52 is annular. The inner region 50 is recessed relative to the outer region 52.

[0040] The susceptor 14 includes a base member 14a and an annular member 14b.

[0041] The base member 14a has a disk shape and is provided in the inner region 50 and the outer region 52. When the wafer W is placed on the susceptor 14, the base member 14a supports the lower surface of the wafer W.

[0042] The base member 14a is made of, for example, graphite.

[0043] The annular member 14b is annular. The annular member 14b is, for example, annular. The annular member 14b is provided in the outer region 52. The annular member 14b is, for example, placed on top of the base member 14a in the outer region 52. The annular member 14b is, for example, placed on the outer periphery of the base member 14a in the outer region 52. The annular member 14b is fixed in position on the base member 14a by, for example, protrusions provided on the outer periphery of the base member 14a. The annular member 14b has an adhesion prevention function that prevents a film from adhering to the underlying base member 14a when a film is formed on the wafer surface.

[0044] 3A and 3B are schematic diagrams of a holder according to a modification of the first embodiment, in which Fig. 3A is a top view and Fig. 3B is a cross-sectional view taken along line AA' in Fig. 3A.

[0045] The protrusions provided on the outer periphery of the base member 14a may be positioned below the annular member 14b as shown in FIG.

[0046] The annular member 14b is made of non-oriented polycrystalline 3C-SiC. "Non-oriented" means that the crystal orientation of the single crystal domains that make up the polycrystal is random. The annular member 14b has non-oriented polycrystalline 3C-SiC on its surface.

[0047] The annular member 14b is primarily composed of polycrystalline 3C—SiC. For example, the volume fraction of polycrystalline 3C—SiC contained in the annular member 14b is greater than the volume fraction of other substances contained in the annular member 14b. For example, the volume fraction of polycrystalline 3C—SiC contained in the annular member 14b is greater than the volume fraction of polycrystalline 4H—SiC contained in the annular member 14b. Furthermore, for example, the volume fraction of polycrystalline 3C—SiC contained in the annular member 14b is greater than the volume fraction of amorphous SiC contained in the annular member 14b.

[0048] The occupancy rate of polycrystalline 3C-SiC on the surface of the annular member 14b is, for example, 80% or more.

[0049] At least the surface of the annular member 14b is made of non-oriented polycrystalline 3C-SiC, and the annular member 14b is an example of a portion having non-oriented polycrystalline 3C-SiC on its surface.

[0050] The annular member 14b is made of, for example, a single material, such as non-oriented polycrystalline 3C-SiC.

[0051] The annular member 14b can be made of, for example, a material different from the material that makes up the base member 14a.

[0052] The non-oriented polycrystalline 3C-SiC contained in the annular member 14b has a diffraction peak intensity of 10 to 40 for the 3C-SiC(200) plane, a diffraction peak intensity of 25 to 50 for the 3C-SiC(220) plane, and a diffraction peak intensity of 15 to 65 for the 3C-SiC(311) plane, where the diffraction peak intensity for the 3C-SiC(111) plane obtained by out-of-plane X-ray diffraction (XRD) measurement is taken as 100.

[0053] Furthermore, in the non-oriented polycrystalline 3C-SiC contained in the annular member 14b, for example, when the diffraction peak intensity of the 3C-SiC(111) plane obtained by out-of-plane XRD measurement is taken as 100, the diffraction peak intensity of the 3C-SiC(400) plane is 0 to 20, the diffraction peak intensity of the 3C-SiC(331) plane is 0 to 20, the diffraction peak intensity of the 3C-SiC(420) plane is 0 to 20, and the diffraction peak intensity of the 3C-SiC(422) plane is 0 to 20. For example, the diffraction peak intensity of the 3C-SiC(400) plane is greater than 0, the diffraction peak intensity of the 3C-SiC(331) plane is greater than 0, the diffraction peak intensity of the 3C-SiC(420) plane is greater than 0, and the diffraction peak intensity of the 3C-SiC(422) plane is greater than 0.

[0054] Figure 4 shows the out-of-plane XRD measurement results of the annular members of the first embodiment and the comparative example. The comparative example annular member is made of polycrystalline 3C-SiC with a (111) orientation. In Figure 4, the upper XRD pattern is the measurement result of the comparative example annular member, and the lower XRD pattern is the measurement result of the first embodiment annular member.

[0055] As shown in Fig. 4, in the case of the annular member of the first embodiment, the diffraction peak of the 3C-SiC (111) plane obtained by out-of-plane XRD measurement is observed to be the strongest compared to other peaks. The diffraction peaks of the 3C-SiC (200), 3C-SiC (220), and 3C-SiC (311) planes are observed to be weaker than the diffraction peak of the 3C-SiC (111). Furthermore, the diffraction peaks of the 3C-SiC (400), 3C-SiC (331), 3C-SiC (420), and 3C-SiC (422) planes are observed to be weaker than the diffraction peaks of the 3C-SiC (200), 3C-SiC (220), and 3C-SiC (311) planes. The magnitude relationship of these peaks is similar to the XRD pattern obtained by XRD measurement of 3C-SiC powder, indicating that the annular member of the first embodiment is not in a specific orientation, i.e., is non-oriented. More specifically, the diffraction peak intensities of the XRD pattern for the annular member of the first embodiment are, when the diffraction peak intensity of the 3C-SiC (111) plane is taken as 100, the diffraction peak intensity of the 3C-SiC (200) plane is 10 to 40, the diffraction peak intensity of the 3C-SiC (220) plane is 25 to 50, and the diffraction peak intensity of the 3C-SiC (311) plane is 15 to 65. Furthermore, the diffraction peak intensity of the 3C-SiC (400) plane is greater than 0, the diffraction peak intensity of the 3C-SiC (331) plane is greater than 0, the diffraction peak intensity of the 3C-SiC (420) plane is greater than 0, and the diffraction peak intensity of the 3C-SiC (422) plane is greater than 0.

[0056] On the other hand, as shown in Figure 4, for the annular member of the comparative example, the diffraction peak intensities of the 3C-SiC (111) plane and the 3C-SiC (222) plane obtained by out-of-plane XRD measurement are mainly observed. Furthermore, the diffraction peaks of the 3C-SiC (200), 3C-SiC (220), 3C-SiC (311), 3C-SiC (400), 3C-SiC (331), 3C-SiC (420), and 3C-SiC (422) planes are barely observed. This indicates that the annular member of the comparative example is composed of (111)-oriented 3C-SiC.

[0057] When a silicon carbide film is formed on the surface of a wafer W using the vapor phase growth apparatus 100, first, the susceptor 14 on which the wafer W is placed is carried into the chamber 10. The susceptor 14 is placed on top of the rotor 16.

[0058] The wafer W is heated using the first heater 22 and the second heater 42. For example, the wafer W is heated to a temperature of 1500° C. or higher and 1800° C. or lower. A process gas G0 is supplied from the buffer chamber 13 to the chamber 10 via a plurality of gas conduits 53.

[0059] The rotary drive mechanism 20 is used to rotate the rotor 16, thereby rotating the susceptor 14. The wafer W placed on the susceptor 14 rotates together with the susceptor 14.

[0060] A silicon carbide film of single crystal, for example, 4H—SiC, is formed on the surface of the rotating wafer W. At this time, a silicon carbide film is also formed on the surface of the annular member 14b placed on the outer periphery of the wafer W.

[0061] Next, the operation and effects of the holder and vapor phase growth apparatus of the first embodiment will be described.

[0062] After a single-crystal silicon carbide film is formed on the surface of a wafer W placed on a susceptor, significant deformation of the susceptor may be observed. For example, significant warping may be observed in the susceptor.

[0063] When a single-crystal silicon carbide film is formed on the surface of a wafer W placed on a susceptor, for example, the silicon carbide film is formed on the surface of the outer peripheral region of the susceptor. For example, stress caused by the silicon carbide film formed on the surface of the outer peripheral region of the susceptor may cause the susceptor to warp significantly. Furthermore, for example, when forming the silicon carbide film, strain introduced by heating the susceptor may cause the susceptor to warp significantly.

[0064] If a large warp occurs in a susceptor, for example, the susceptor may be damaged. Furthermore, if a large warp occurs in a susceptor, for example, a transfer error may occur when the susceptor is transferred. Therefore, it is desirable to suppress the warp of the susceptor.

[0065] The susceptor 14 of the first embodiment includes a portion having a surface made of non-oriented polycrystalline 3C—SiC. Specifically, the surface of the annular member 14b provided in the outer region 52 of the susceptor 14 is made of non-oriented polycrystalline 3C—SiC.

[0066] The surface of the annular member 14b is made of non-oriented polycrystalline 3C-SiC, which suppresses warpage of the susceptor 14. One reason for this is thought to be that the surface of the annular member 14b is made of non-oriented polycrystalline 3C-SiC, which reduces stress caused by the silicon carbide film formed on the surface of the outer region 52 of the susceptor 14.

[0067] Fig. 5 shows the results of Raman spectroscopy of a silicon carbide film formed on the surface of a comparative annular member. The comparative annular member is made of polycrystalline 3C-SiC with a (111) orientation. Fig. 5 shows the results of evaluating a silicon carbide film formed on the surface of a annular member placed on the outer periphery of a wafer W when a 4H-SiC single-crystal silicon carbide film was formed on the surface of the wafer W.

[0068] Figure 5 shows the results of mapping the crystalline state of a silicon carbide film formed on the surface of an annular member using Raman spectroscopy. Figure 5(a) shows the detection result of a peak corresponding to 3C-SiC. Figure 5(b) shows the detection result of a peak corresponding to 4H-SiC. Figure 5(c) shows the detection result of a peak corresponding to amorphous SiC. Figure 5(d) shows the detection result of a peak corresponding to strained 3C-SiC.

[0069] The distribution of peaks corresponding to each crystalline state is shown in Figure 5. Areas with high white gradations indicate areas where SiC in the corresponding crystalline state exists, while black areas indicate areas where SiC in the corresponding crystalline state does not exist.

[0070] As shown in Figures 5(a), 5(b), 5(c), and 5(d), the silicon carbide film formed on the surface of the annular member of the comparative example contains 4H-SiC and amorphous SiC, but 3C-SiC is widely distributed. In particular, as shown in Figure 5(d), strained 3C-SiC is widely distributed.

[0071] The widespread distribution of strained 3C-SiC in the silicon carbide film formed on the surface of the annular member suggests that the annular member of the comparative example has a large strain. By placing the annular member of the comparative example on a surface plate, it was confirmed that the annular member of the comparative example had a large warp.

[0072] 6 shows the results of Raman spectroscopy measurement of a silicon carbide film formed on the surface of the annular member of the first embodiment. The annular member 14b of the first embodiment is made of non-oriented polycrystalline 3C-SiC. FIG. 6 shows the results of evaluation of a silicon carbide film formed on the surface of the annular member placed on the outer periphery of a wafer W when a single-crystal silicon carbide film of 4H-SiC is formed on the surface of the wafer W.

[0073] Figure 6 shows the results of mapping the crystalline state of the silicon carbide film formed on the surface of the annular member using Raman spectroscopy. Figure 6(a) shows the detection result of the peak corresponding to 3C-SiC. Figure 6(b) shows the detection result of the peak corresponding to 4H-SiC. Figure 6(c) shows the detection result of the peak corresponding to amorphous SiC.

[0074] The distribution of peaks corresponding to each crystalline state is shown in Figure 6. Areas with high white gradations indicate areas where SiC in the corresponding crystalline state exists, while black areas indicate areas where SiC in the corresponding crystalline state does not exist.

[0075] 6(a), 6(b), and 6(c), the silicon carbide film formed on the surface of the annular member 14b of the first embodiment has 3C—SiC widely distributed therein, similar to the annular member of the comparative example. However, unlike the annular member of the comparative example, no peaks corresponding to strained 3C—SiC were detected.

[0076] The fact that no strained 3C—SiC was detected in the silicon carbide film formed on the surface of the annular member 14b suggests that the strain in the annular member 14b of the first embodiment is small. By placing the measured annular member 14b of the first embodiment on a surface plate, it was confirmed that the warpage of the annular member 14b of the first embodiment is significantly smaller than that of the annular member of the comparative example.

[0077] As described above, according to the first embodiment, it is possible to provide a holder capable of suppressing deformation and a vapor phase growth apparatus including the holder.

[0078] (Second embodiment) The holder of the second embodiment differs from the holder of the first embodiment in that the inner region has non-oriented polycrystalline 3C—SiC on the surface. Hereinafter, description of the contents that overlap with the first embodiment will be omitted.

[0079] 7A and 7B are schematic diagrams of a holder according to the second embodiment, in which Fig. 7A is a top view and Fig. 7B is a cross-sectional view taken along line BB' in Fig. 7A.

[0080] The susceptor 114 includes an inner region 50 and an outer region 52. The outer region 52 surrounds the inner region 50. When the wafer W is placed on the susceptor 114, the outer region 52 surrounds the wafer W.

[0081] The inner region 50 is disc-shaped, and the outer region 52 is annular. The inner region 50 is recessed relative to the outer region 52.

[0082] The susceptor 114 has non-oriented polycrystalline 3C-SiC on the surface thereof. The inner region 50 and the outer region 52 of the susceptor 114 have non-oriented polycrystalline 3C-SiC on at least the surface thereof.

[0083] The susceptor 114 is made of, for example, a single material, such as non-oriented polycrystalline 3C-SiC.

[0084] In the second embodiment, the surface of the susceptor 114 is made of non-oriented polycrystalline 3C-SiC, so that warping of the susceptor 114 is suppressed.

[0085] (Variation) 8A and 8B are schematic diagrams of a holder according to a modification of the second embodiment, in which Fig. 8A is a top view and Fig. 8B is a cross-sectional view taken along line CC' in Fig. 8A.

[0086] The susceptor 115 differs from the susceptor 114 of the second embodiment in that it has three recesses 115a. The susceptor 115 is capable of simultaneously mounting three wafers W thereon.

[0087] In the modified example of the second embodiment, the surface of the susceptor 115 is made of non-oriented polycrystalline 3C-SiC, so that warping of the susceptor 115 is suppressed.

[0088] As described above, according to the second embodiment and its modified example, similarly to the first embodiment, it is possible to provide a holder capable of suppressing deformation and a vapor phase growth apparatus including the holder.

[0089] (Third embodiment) The holder of the third embodiment differs from the holder of the first embodiment in that the annular member includes a first member and a second member separable from the first member, and at least one of the first member and the second member includes a portion having non-oriented polycrystalline 3C—SiC on its surface. Hereinafter, description of the contents overlapping with the first embodiment will be omitted.

[0090] 9A and 9B are schematic diagrams of a holder according to the third embodiment, in which Fig. 9A is a top view and Fig. 9B is a cross-sectional view taken along line DD' of Fig. 9A.

[0091] The annular member 14b has an annular shape. The annular member 14b has, for example, a circular ring shape. The annular member 14b is provided in the outer region 52. The annular member 14b is placed, for example, on the upper part of the base member 14a of the outer region 52. The annular member 14b is placed, for example, on the outer periphery of the base member 14a of the outer region 52.

[0092] The annular member 14b includes a first member 14bx and a second member 14by. The first member 14bx and the second member 14by are separable from the base member 14a.

[0093] The first member 14bx and the second member 14by are, for example, annular. The first member 14bx and the second member 14by are, for example, annular.

[0094] The second member 14by is provided, for example, on the outside of the first member 14bx. The second member 14by surrounds the first member 14bx, for example.

[0095] 9(b), for example, two protrusions are provided on the outer periphery of the base member 14a. The first member 14bx is fixed in position by, for example, fitting into the inner protrusions on the outer periphery of the base member 14a. The second member 14by is fixed in position by, for example, fitting into the outer protrusions on the outer periphery of the base member 14a.

[0096] The method for fixing the first member 14bx and the second member 14by is not limited to the method shown in FIG. 9(b).

[0097] The annular member 14b includes a portion having non-oriented polycrystalline 3C-SiC on the surface.

[0098] The first member 14bx includes a portion having non-oriented polycrystalline 3C-SiC on its surface. For example, at least the surface of the first member 14bx is made of non-oriented polycrystalline 3C-SiC. For example, the first member 14bx is an example of a portion having non-oriented polycrystalline 3C-SiC on its surface.

[0099] The first member 14bx is made of, for example, a single material, such as non-oriented polycrystalline 3C-SiC.

[0100] The second component 14by includes a portion having non-oriented polycrystalline 3C-SiC on its surface. For example, at least the surface of the second component 14by is non-oriented polycrystalline 3C-SiC. For example, the second component 14by is an example of a portion having non-oriented polycrystalline 3C-SiC on its surface.

[0101] The second member 14by is made of, for example, a single material, such as non-oriented polycrystalline 3C-SiC.

[0102] When a single-crystal silicon carbide film is formed on the surface of the wafer W placed on the susceptor 14, the silicon carbide film is formed on the surface of the first member 14bx and the surface of the second member 14by. The first member 14bx and the second member 14by have non-oriented polycrystalline 3C—SiC on their surfaces, which reduces warpage of the first member 14bx and the second member 14by. Therefore, for example, damage to the first member 14bx and the second member 14by due to stress is reduced.

[0103] However, if the silicon carbide films formed on the surfaces of the first member 14bx and the second member 14by become thick, the warping of the first member 14bx and the second member 14by increases, and the first member 14bx and the second member 14by may be damaged by stress. Furthermore, if the silicon carbide films formed on the surfaces of the first member 14bx and the second member 14by become thick, the flow of the process gas when forming the silicon carbide film on the surface of the wafer W may be disturbed, and the characteristics of the silicon carbide film on the surface of the wafer W may change.

[0104] Therefore, the silicon carbide films formed on the surfaces of the first member 14bx and the second member 14by need to be periodically removed. The silicon carbide films formed on the surfaces of the first member 14bx and the second member 14by are removed by, for example, mechanical polishing outside the chamber 10.

[0105] The annular member 14b of the third embodiment includes a first member 14bx and a second member 14by that are separable. Because the annular member 14b can be separated into two members, for example, the surface area of ​​the member to be polished by mechanical polishing can be reduced. Reducing the surface area of ​​the member can, for example, prevent damage to the member during mechanical polishing. Therefore, it becomes easier to remove the silicon carbide film formed on the surface of the annular member 14b.

[0106] (Variation) The annular member 14b of the modified example of the third embodiment differs from the annular member 14b of the third embodiment in that the first member 14bx includes a portion having non-oriented polycrystalline 3C-SiC on its surface, while the second member 14by does not include a portion having non-oriented polycrystalline 3C-SiC on its surface.

[0107] The first member 14bx in the modified example of the third embodiment includes a portion having non-oriented polycrystalline 3C-SiC on its surface. For example, at least the surface of the first member 14bx is made of non-oriented polycrystalline 3C-SiC. For example, the first member 14bx is an example of a portion having non-oriented polycrystalline 3C-SiC on its surface.

[0108] The first member 14bx is made of, for example, a single material, such as non-oriented polycrystalline 3C-SiC.

[0109] The second member 14by in the modification of the third embodiment does not include a portion having non-oriented polycrystalline 3C-SiC on its surface, and is made of, for example, polycrystalline 4H-SiC, which is less expensive than polycrystalline 3C-SiC.

[0110] In the annular member 14b of the modified third embodiment, only the surface of the first member 14bx at the inner periphery is made of polycrystalline 3C-SiC. The silicon carbide film formed on the surface grows quickly, and the inner periphery is prone to warping and therefore breakage. By using polycrystalline 3C-SiC for the surface of the inner periphery, breakage of the annular member 14b can be suppressed. Furthermore, by constructing the second member 14by at the outer periphery from inexpensive polycrystalline 4H-SiC, the cost of the annular member 14b can be reduced.

[0111] It is also possible to configure the first member 14bx so that it does not include a portion having non-oriented polycrystalline 3C-SiC on its surface, and the second member 14by so that it includes a portion having non-oriented polycrystalline 3C-SiC on its surface.

[0112] The embodiments of the present invention have been described above with reference to specific examples. The above-described embodiments are merely examples and do not limit the present invention. Furthermore, the components of each embodiment may be combined as appropriate.

[0113] Although the embodiment has been described with reference to the case of forming a single-crystal silicon carbide film, the present invention can also be applied to the formation of a polycrystalline or amorphous silicon carbide film, and can also be applied to the formation of films other than silicon carbide films.

[0114] Furthermore, in the embodiment, a single crystal silicon carbide wafer has been described as an example of the substrate, but the substrate is not limited to a single crystal silicon carbide wafer.

[0115] Furthermore, in the embodiment, a single-wafer type epitaxial growth apparatus has been described as an example of a vapor phase growth apparatus, but the vapor phase growth apparatus is not limited to a single-wafer type epitaxial growth apparatus.

[0116] In the embodiments, descriptions of the apparatus configuration, manufacturing method, and other parts not directly necessary for explaining the present invention are omitted, but the required apparatus configuration, manufacturing method, and the like can be appropriately selected and used. In addition, all vapor phase growth apparatuses that include the elements of the present invention and that can be appropriately modified by those skilled in the art are included in the scope of the present invention. The scope of the present invention is defined by the claims and their equivalents. [Explanation of symbols]

[0117] 14 Susceptor (holder) 14a Base member 14b Annular member (part) 14bx First member (part) 14by second member (part) 50 inner area 52 Outer area 100 Vapor phase growth equipment W wafer (substrate)

Claims

1. a portion having a surface made of non-oriented polycrystalline 3C-SiC, on which a substrate can be placed; In the non-oriented polycrystalline 3C-SiC, when the diffraction peak intensity of the 3C-SiC (111) plane obtained by out-of-plane XRD measurement is taken as 100, the diffraction peak intensity of the 3C-SiC (400) plane is greater than 0, the diffraction peak intensity of the 3C-SiC (331) plane is greater than 0, the diffraction peak intensity of the 3C-SiC (420) plane is greater than 0, and the diffraction peak intensity of the 3C-SiC (422) plane is greater than 0.

2. The holder according to claim 1, wherein the non-oriented polycrystalline 3C-SiC has a diffraction peak intensity of 10 to 40 for the 3C-SiC (200) plane, a diffraction peak intensity of 25 to 50 for the 3C-SiC (220) plane, and a diffraction peak intensity of 15 to 65 for the 3C-SiC (311) plane, where the diffraction peak intensity for the 3C-SiC (111) plane obtained by the out-of-plane XRD measurement is taken as 100.

3. 2. The holder according to claim 1, wherein the diffraction peak intensity of the 3C-SiC (400) plane is 20 or less, the diffraction peak intensity of the 3C-SiC (331) plane is 20 or less, the diffraction peak intensity of the 3C-SiC (420) plane is 20 or less, and the diffraction peak intensity of the 3C-SiC (422) plane is 20 or less.

4. 2. The holder according to claim 1, comprising an inner region and an annular outer region that surrounds the inner region and surrounds the substrate when the substrate is placed thereon, and the portion is provided in the outer region.

5. a base member and an annular member placed on an outer periphery of the base member, 2. The holder of claim 1, wherein said annular member includes said portion.

6. the annular member includes a first member and a second member separable from the first member, 6. The holder of claim 5, wherein at least one of the first member and the second member includes the portion.

7. 7. The holder of claim 6, wherein said first member is annular, said second member is annular, and said second member surrounds said first member.

8. 8. The holder of claim 7, wherein said first member includes said portion and said second member does not include said portion.

9. A vapor phase growth apparatus comprising the holder according to claim 1.

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