Method for joining electronic devices and method for transferring large quantities of electronic devices

Abstract

To provide a joining method for electronic devices.SOLUTION: The joining method for electronic devices, comprises the steps of: providing a first substrate having a first top surface and a first bottom surface opposite to each other, and the first top surface having a plurality of spaced electronic devices formed thereon and aligned in one column or one row; providing a second substrate below the first substrate, wherein the second substrate has a second top surface and a second bottom surface opposite to each other, and the first top surface faces the second top surface; and providing a laser device, and causes the laser device to emit a linear laser beam toward the first substrate so as to irradiate the electronic devices aligned in the one column or the one row on the first top surface of the first substrate, and thereby causing the electronic devices to be peeled off from the first top surface of the first substrate and joined to the second top surface of the second substrate.SELECTED DRAWING: Figure 1C

Description

[Technical Field]

[0001] The present invention discloses a method for bonding electronic devices and a method for transferring a large number of electronic devices. [Background technology]

[0002] Light-emitting diodes (LEDs) have advantages such as active light emission, high brightness, and energy saving, and are therefore widely used in technologies such as lighting, displays, and projectors. Micro LED displays are gradually becoming a new generation of display technology. However, a high-density (FHD) display has approximately 2 million pixels arranged in 1920 rows and 1080 columns, and each pixel is further divided into three subpixels: red, green, and blue. As a result, a high-density LED display has a total of approximately 6 million LED dies. To cut and attach these 6 million dies to the display panel substrate, a key technology is required: how to accurately transfer and fix a large number of micro LEDs to the display panel substrate.

[0003] Conventional electronic device joining methods mainly use reflow welding, in which the electronic device is heated with tin paste to reflow and then welded to a target substrate. However, reflow welding has drawbacks such as drift of the electronic device due to uneven heating during the reflow process, short circuit of the electronic device due to excessive tin paste, empty welding due to insufficient tin paste, and cold welding due to low reflow temperature.

[0004] In addition, conventional methods for transferring electronic devices in large quantities mainly include electrostatic transfer, magnetic transfer, micro-transfer, and fluid assembly, etc. However, these methods for transferring electronic devices in large quantities still need to improve the transfer speed and yield.

[0005] In view of this, the industry is eagerly awaiting new methods for joining electronic devices and methods for transferring large quantities of electronic devices. Summary of the Invention

[0006] The present invention discloses a method for bonding electronic devices, comprising the steps of: providing a first substrate having opposing first upper and lower surfaces, with a plurality of electronic devices on the first upper surface of the first substrate, the electronic devices being arranged in a row or a line spaced apart from each other; providing a second substrate having opposing second upper and lower surfaces, with the second substrate being positioned below the first substrate, with the first upper surface facing the second upper surface; providing a laser device, which emits a linear laser beam toward the first substrate and irradiates the linear laser beam onto the electronic devices arranged in a row or a line on the first upper surface of the first substrate, so that the electronic devices can be peeled off from the first upper surface of the first substrate and bonded to the second upper surface of the second substrate.

[0007] In the above-described method for bonding an electronic device, the electronic device is selected from the group consisting of one or more of a light-emitting diode, a laser diode, and a semiconductor element.

[0008] In the above-mentioned method for bonding an electronic device, the semiconductor element is selected from one or more of the group consisting of a processor, a memory IC, a microdevice IC, a logic IC, and an analog IC.

[0009] In the above-described method for bonding electronic devices, the second substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board.

[0010] In the above-described electronic device bonding method, the laser device has a laser divergence angle θ, and the length of the linear laser beam can be controlled by adjusting the magnitude of the laser divergence angle θ, which is, for example, but not limited to, 1 degree or greater.

[0011] In the above-mentioned method for bonding electronic devices, the laser device includes a laser light source and an optical element, and the laser light emitted by the laser light source is converted into a linear laser light by the optical element.

[0012] In the above-described method for bonding electronic devices, the optical element is a diffractive optical element, and / or a refractive optical element, and / or a reflective optical element.

[0013] The present invention further discloses a method for transferring a large number of electronic devices, the method comprising the steps of: providing a first substrate having a first upper surface and a first lower surface opposite to each other, the first upper surface of the first substrate having a plurality of electronic devices arranged along a first direction and a second direction, respectively, to form a first electronic device matrix formed by an arrangement of M rows of electronic devices by N columns of electronic devices, where M and N are both natural numbers greater than 1; providing a second substrate having a second upper surface and a second lower surface opposite to each other, the second substrate being disposed below the first substrate, the first upper surface facing the second upper surface; providing a laser device, the laser device a linear laser beam is emitted toward the first substrate, the linear laser beam is sequentially irradiated onto the Pth row electronic device or the Qth column electronic device in the first electronic device matrix, the Pth row electronic device or the Qth column electronic device is peeled off from the first top surface of the first substrate and bonded to the second top surface of the second substrate, and after all of the electronic devices in the first electronic device matrix have been peeled off from the first top surface of the first substrate and bonded to the second top surface of the second substrate, a second electronic device matrix formed on the second top surface of the second substrate is formed with an arrangement of M rows of electronic devices and N columns of electronic devices, where P and Q are all natural numbers and 1≦P≦M and 1≦Q≦N.

[0014] In the method for transferring a large amount of electronic devices as described above, the electronic devices are selected from the group consisting of one or more of light emitting diodes, laser diodes, and semiconductor elements.

[0015] In the method for transferring a large amount of electronic devices as described above, the semiconductor devices are selected from one or more of the group consisting of processors, memory ICs, microdevice ICs, logic ICs, and analog ICs.

[0016] In the above-mentioned method for transferring a large number of electronic devices, the second substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board.

[0017] In the method for transferring a large number of electronic devices, the laser device has a laser divergence angle θ, and the length of the linear laser beam can be controlled by adjusting the magnitude of the laser divergence angle θ, which may be, for example, but not limited to, 1 degree or more.

[0018] In the method for transferring a large amount of electronic devices as described above, the laser device includes a laser light source and an optical element, and the laser light emitted by the laser light source is converted into a linear laser light by the optical element.

[0019] In the method for transferring a large amount of electronic devices as described above, the optical element is a diffractive optical element, and / or a refractive optical element, and / or a reflective optical element. [Brief explanation of the drawings]

[0020] [Figure 1A] 1 is an illustrative method for bonding electronic devices in accordance with one embodiment of the present invention; [Figure 1B] 1 is an illustrative method for bonding electronic devices in accordance with one embodiment of the present invention; [Figure 1C] 1 is an illustrative method for bonding electronic devices in accordance with one embodiment of the present invention; [Figure 1D] 1 is an illustrative method for bonding electronic devices in accordance with one embodiment of the present invention; [Figure 2A] 1 is an illustrated method for transferring a large number of electronic devices in accordance with another embodiment of the present invention. [Figure 2B] 1 is an illustrated method for transferring a large number of electronic devices in accordance with another embodiment of the present invention. [Figure 2C] 1 is an illustrated method for transferring a large number of electronic devices in accordance with another embodiment of the present invention. [Figure 2D] 1 is an illustrated method for transferring a large number of electronic devices in accordance with another embodiment of the present invention. [Figure 2E] 1 is an illustrated method for transferring a large number of electronic devices in accordance with another embodiment of the present invention. [Figure 2F] 1 is an illustrated method for transferring a large number of electronic devices in accordance with another embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0021] In order to more fully and completely describe the disclosure of the present invention, the following description will discuss embodiments and specific examples of the present invention. However, these are not the only ways to implement or operate the specific examples of the present invention. The examples disclosed below may be combined with or substituted for each other when beneficial, or one example may be added to another example without the need for further description or explanation.

[0022] In the following description, numerous specific details are set forth in order to provide the reader with a thorough understanding of the following embodiments. However, embodiments of the present invention may be practiced without such specific details. In other instances, well-known structures and devices are shown in the drawings only diagrammatically to simplify the drawings.

[0023] Example Example 1 First, refer to FIG. 1A. As shown in FIG. 1A, a first substrate 10 having a first upper surface 10A and a first lower surface 10B facing each other is provided. A plurality of electronic devices 12 are provided on the first upper surface 10A of the first substrate 10. The electronic devices 12 are arranged in a row or column spaced apart from one another. The electronic devices 12 may be selected from, but are not limited to, one or more of the following: a light-emitting diode, a laser diode, and a semiconductor device. The semiconductor device may be selected from, but is not limited to, one or more of the following: a processor, a memory IC, a microcomputer IC, a logic IC, and an analog IC.

[0024] Next, refer to FIG. 1B. As shown in FIG. 1B, a second substrate 20 is provided that is disposed below the first substrate 10. The second substrate 20 has a second upper surface 20A and a second lower surface 20B that face each other. The first upper surface 10A faces the second upper surface 20A. The second substrate 20 may be, for example, but is not limited to, a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board.

[0025] Next, reference is made to FIGS. 1C and 1D. As shown in FIG. 1C, a laser device 30 is provided. The laser device 30 emits a linear laser beam 35 toward the first substrate 10. The linear laser beam 35 is irradiated onto the electronic devices 12 arranged in a row or column on the first upper surface 10A of the first substrate 10, causing the electronic devices 12 to be peeled off from the first upper surface 10A of the first substrate 10 and bonded to the second upper surface 2A of the second substrate 20, as shown in FIG. 1D. The laser device 30 includes a laser light source 31 and an optical element 32. The laser beam emitted by the laser light source 31 is converted into a linear laser beam 35 by the optical element 32. The optical element 32 may be, for example, a diffractive optical element, a refractive optical element, and / or a reflective optical element, but is not limited thereto. The laser device 30 has a laser divergence angle θ. The length of the linear laser beam 35 can be controlled by adjusting the magnitude of the laser divergence angle θ. Here, the laser divergence angle θ is, for example, 1 degree or more, but is not limited to this.

[0026] Example 2 First, refer to FIG. 2A. As shown in FIG. 2A, a first substrate 100 having a first upper surface 100A and a first lower surface 100B facing each other is provided. A plurality of electronic devices 120 are disposed on the first upper surface 100A. These electronic devices 120 are arranged along a first direction and a second direction, respectively, to form a first electronic device matrix 150 having an arrangement of M rows of electronic devices and N columns of electronic devices, where M and N are both natural numbers greater than 1. These electronic devices 120 may be selected from, for example, but not limited to, one or more of the group consisting of light-emitting diodes, laser diodes, and semiconductor devices. The semiconductor devices may be selected from, for example, but not limited to, one or more of the group consisting of processors, memory ICs, microdevice ICs, logic ICs, and analog ICs.

[0027] 2A, the first electronic device matrix 150 of the second embodiment is formed by eight rows of electronic devices 120 arranged in the X-axis direction and five columns of electronic devices 120 arranged in the Y-axis direction. That is, M=8, N=5, the first direction is the X-axis direction, and the second direction is the Y-axis direction. However, according to other embodiments of the present invention, M and N may be other natural numbers greater than 1, and the first and second directions may be changed to other directions as needed.

[0028] Next, reference is made to FIG. 2B. As shown in FIG. 2B, a second substrate 200 is provided below the first substrate 100. The second substrate 200 has a second upper surface 200A and a second lower surface 200B that face each other. The first upper surface 100A faces the second upper surface 200A. The second substrate 200 may be, for example, but is not limited to, a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board.

[0029] Next, reference is made to FIGS. 2C to 2E. As shown in FIGS. 2C to 2E, a laser device 300 is provided. The laser device 300 emits a linear laser beam 350 onto the first substrate 100. The linear laser beam 350 is sequentially irradiated onto the electronic devices 120 in the Pth row or the Qth column of the first electronic device matrix 150, causing the electronic devices 120 in the Pth row or the Qth column to be peeled off from the first top surface 100A of the first substrate 100 and bonded to the second top surface 200A of the second substrate 200. Here, P and Q are both natural numbers, 1≦P≦M and 1≦Q≦N. The laser device 300 includes a laser light source 310 and an optical element 320. The laser beam emitted by the laser light source 310 is converted into the linear laser beam 350 by the optical element 320, which may be, for example, a diffractive optical element, a refractive optical element, and / or a reflective optical element. The laser device 300 has a laser divergence angle θ. The length of the linear laser beam 350 can be controlled by adjusting the magnitude of the laser divergence angle θ. Here, the laser divergence angle θ is, for example, 1 degree or more, but is not limited to this.

[0030] 2C to 2E , in this second embodiment, the linear laser beam 350 is irradiated sequentially along the X-axis direction to the electronic devices 120 in the first, second, ..., eighth rows of the first electronic device matrix 150, thereby peeling the electronic devices 120 in the first, second, ..., eighth rows from the first top surface 100A of the first substrate 100 and bonding them to the second top surface 200A of the second substrate 200. That is, P=1, 2, ..., 8. According to another embodiment of the present invention, the linear laser beam 350 is irradiated sequentially along the Y-axis direction to the electronic devices 120 in the first, second, ..., fifth rows of the first electronic device matrix 150, thereby peeling the electronic devices 120 in the first, second, ..., fifth rows from the first top surface 100A of the first substrate 100 and bonding them to the second top surface 200A of the second substrate 200. That is, Q=1, 2, ..., 5.

[0031] Finally, referring to Figure 2F, all of the electronic devices 120 in the first electronic device matrix 150 are peeled off from the first top surface 100A of the first substrate 100 and bonded to the second top surface 200A of the second substrate 200. As a result, a second electronic device matrix 250 is formed on the second top surface 200A of the second substrate 200, as shown in Figure 2F, with an arrangement of 8 rows of electronic devices and 5 columns of electronic devices.

[0032] Although the present invention has been disclosed as above in the embodiments, it is not used to limit the present invention, and any person skilled in the art can make various modifications and improvements without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention is subject to those defined by the following claims. [Explanation of symbols]

[0033] 10, 100 First board 10A, 100A 1st top surface 10B, 100B 1st bottom surface 12, 120 Electronic Devices 20, 200 Second board 20A, 200A 2nd top surface 20B, 200B 2nd bottom surface 30, 300 laser equipment 31, 310 Laser light source 32, 320 Optical elements 150 First Electronic Device Matrix 250 Second Electronic Device Matrix θ Laser divergence angle

Claims

1. A method for bonding electronic devices, comprising: providing a first substrate having opposing first upper and lower surfaces, the first upper surface of the first substrate having a plurality of electronic devices arranged in a row or column spaced apart from one another; providing a second substrate having opposing second upper and lower surfaces, the second substrate being disposed below the first substrate, the first upper surface facing the second upper surface; A laser device is provided, the laser device having a laser divergence angle θ, the laser device emitting a linear laser beam to the first substrate, a length of the linear laser beam being controllable by adjusting the magnitude of the laser divergence angle θ, the linear laser beam being irradiated onto the electronic devices arranged in one column or one row on the first upper surface of the first substrate, and the electronic devices being peeled off from the first upper surface of the first substrate and bonded to the second upper surface of the second substrate.

2. A method for bonding an electronic device, comprising the steps of:

2. A method for joining electronic devices as described in claim 1, wherein the laser divergence angle θ is 1 degree or greater.

3. A method for joining electronic devices, comprising: providing a first substrate having opposing first upper and lower surfaces, the first upper surface of the first substrate having a plurality of electronic devices arranged in a row or column spaced apart from one another; providing a second substrate having opposing second upper and lower surfaces, the second substrate being disposed below the first substrate, the first upper surface facing the second upper surface; A laser device is provided, the laser device including a laser light source and an optical element, wherein laser light emitted from the laser light source is converted into linear laser light by the optical element, the laser device is configured to emit the linear laser light toward the first substrate, and irradiate the linear laser light onto the electronic devices arranged in one column or one row on the first upper surface of the first substrate, thereby peeling the electronic devices from the first upper surface of the first substrate and bonding them to the second upper surface of the second substrate.

2. A method for bonding an electronic device, comprising the steps of:

4. A method for joining an electronic device as described in claim 3, wherein the optical element is a diffractive optical element, and / or a refractive optical element, and / or a reflective optical element.

5. 5. The method for bonding electronic devices according to claim 1, wherein the electronic device is selected from the group consisting of one or more of a light-emitting diode, a laser diode, and a semiconductor element.

6. 6. The method for bonding electronic devices according to claim 5, wherein the semiconductor element is selected from one or more of the group consisting of a processor, a memory IC, a microdevice IC, a logic IC, and an analog IC.

7. 5. The method for bonding electronic devices according to claim 1, wherein the second substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board.

8. 1. A method for transferring a large number of electronic devices, comprising: providing a first substrate having a first upper surface and a first lower surface opposite to each other, the first upper surface of the first substrate having a plurality of electronic devices arranged along a first direction and a second direction, respectively, to form a first electronic device matrix formed by an arrangement of M rows of electronic devices by N columns of electronic devices, where M and N are both natural numbers greater than 1; providing a second substrate having opposing second upper and lower surfaces, the second substrate being disposed below the first substrate, the first upper surface facing the second upper surface; a laser device having a laser divergence angle θ, the laser device emitting a linear laser beam toward the first substrate, a length of the linear laser beam being controllable by adjusting the magnitude of the laser divergence angle θ; sequentially irradiating the linear laser beam onto the Pth row electronic device or the Qth column electronic device in the first electronic device matrix, and peeling the Pth row electronic device or the Qth column electronic device from the first top surface of the first substrate and bonding them to the second top surface of the second substrate; and after all of the electronic devices in the first electronic device matrix have been peeled from the first top surface of the first substrate and bonded to the second top surface of the second substrate, a second electronic device matrix formed with an array of M rows of electronic devices by N columns of electronic devices is formed on the second top surface of the second substrate, where P and Q are all natural numbers, and 1≦P≦M and 1≦Q≦N; A method for transferring a large number of electronic devices, comprising the steps of:

9. A method for transferring a large number of electronic devices as described in Claim 8, wherein the laser divergence angle θ is 1 degree or more.

10. A method for transferring a large number of electronic devices, comprising: providing a first substrate having a first upper surface and a first lower surface opposite to each other, the first upper surface of the first substrate having a plurality of electronic devices arranged along a first direction and a second direction, respectively, to form a first electronic device matrix formed by an arrangement of M rows of electronic devices by N columns of electronic devices, where M and N are both natural numbers greater than 1; providing a second substrate having opposing second upper and lower surfaces, the second substrate being disposed below the first substrate, the first upper surface facing the second upper surface; a laser device including a laser light source and an optical element, wherein laser light emitted by the laser light source is converted into linear laser light by the optical element; the laser device emits the linear laser light toward the first substrate, and sequentially irradiates the linear laser light onto the Pth row electronic device or the Qth column electronic device in the first electronic device matrix, thereby peeling the Pth row electronic device or the Qth column electronic device from the first top surface of the first substrate and bonding them to the second top surface of the second substrate; and after all of the electronic devices in the first electronic device matrix have been peeled from the first top surface of the first substrate and bonded to the second top surface of the second substrate, a second electronic device matrix formed with an array of M rows of electronic devices by N columns of electronic devices is formed on the second top surface of the second substrate, wherein P and Q are all natural numbers, and 1≦P≦M and 1≦Q≦N; A method for transferring a large number of electronic devices, comprising the steps of:

11. A method for transferring a large number of electronic devices as described in claim 10, wherein the optical element is a diffractive optical element, and / or a refractive optical element, and / or a reflective optical element.

12. 12. The method for transferring a large number of electronic devices according to claim 8, wherein the electronic devices are selected from the group consisting of one or more of a light emitting diode, a laser diode, and a semiconductor element.

13. 13. The method of claim 12, wherein the semiconductor devices are selected from one or more of the group consisting of processors, memory ICs, microdevice ICs, logic ICs, and analog ICs.

14. 12. The method for transferring a large number of electronic devices according to claim 8, wherein the second substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board.

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