Multilayer release stacks for light-induced movement of components

The use of a light-induced release stack with a light-absorbing and melting layer facilitates precise and efficient transfer of components by controlling the adhesive layer's release, minimizing substrate waste and component damage.

JP7783901B2Active Publication Date: 2025-12-10NEDERLANDSE ORG VOOR TOEGEPAST NATUURWETENSCHAPPELIJK ONDERZOEK TNO
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Patent Information

Application Number
JP2023553367
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2021-03-02
Filing Date
2022-03-01
Publication Date
2025-12-10
Estimated Expiration
2042-03-01

AI Technical Summary

Technical Problem

Existing methods for controlled movement and placement of components, such as μLEDs, lack efficiency and precision in transferring components from a donor substrate to an acceptor substrate, often resulting in undesirable component trajectories and substrate waste.

Method used

A release stack comprising a light-absorbing layer, a melting point, and an adhesive layer, and a melting layer, the melting layer, the adhesive layer, and an adhesive layer, where the light-absorbing layer absorbs light energy to heat the melting layer, which melts at a lower temperature than the adhesive layer, allowing controlled release of components using light-induced heating.

Benefits of technology

The method enables precise, efficient transfer of components with minimal substrate waste and controlled movement, reducing gas generation and component rotation, and allows for high-speed transfer without damaging the components.

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Abstract

A method and system for light-induced transfer of a component (15) from a donor substrate (10) to an acceptor substrate (20). The donor substrate (10) comprises a transparent carrier (11) configured to carry the component (15) facing the acceptor substrate (20), and a release stack (S). The release stack (S) comprises a light absorbing layer (12), a melt layer (13), and an adhesive layer (14). The light absorbing layer (12) has a relatively high absorption coefficient for absorbing a light beam (L) that causes heat to be conducted to the melt layer (13). The light absorbing layer (12) has a relatively high melting point (Tm12) so that the light absorbing layer (12) can remain solid while the melt layer (13) is melted. The adhesive layer (14) bonds the component (15) to the melt layer (13) while the melt layer (13) is solid and releases the bond when the melt layer (13) is melted (M).
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Citation Information

Patent Citations

  • Placement of ultra-small or ultra-thin discrete components

    JP2019503081A

  • Light-induced selective transfer of components

    JP2022533844A

  • Methods and system for processing semiconductor device structures

    US20190051630A1