SUBSTRATE PROCESSING APPARATUS AND METHOD FOR CONTROLLING PURGE GAS

Abstract

To provide a substrate processing apparatus or the like that can suppress accumulation of particles by resolving residence of a gas.SOLUTION: A substrate processing apparatus comprises: a vacuum transfer chamber that has an upper surface, a bottom surface facing the upper surface, and side surfaces between the upper surface and the bottom surface, the side surfaces having a first side surface and a second surface facing the first side surface; a transfer robot that is arranged within the vacuum transfer chamber, and that transfers a substrate; a load lock module that is connected to the first side surface; a pipeline that is connected to a purge gas supply source and that supplies a purge gas to an inside of the vacuum transfer chamber; at least one gas port that is provided on the upper surface near the second side surface, and that is connected to the pipeline; and at least one exhaust port that is provided on the bottom surface near the first side surface of the vacuum transfer chamber, and that is connected to an exhaust pump which exhausts the purge gas supplied to the vacuum transfer chamber.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus, a purge gas control method, and a vacuum transfer chamber cleaning method. [Background technology]

[0002] In substrate processing apparatuses, a vacuum transfer chamber that transfers substrates to processing chambers where the substrates are processed is supplied with a purge gas, such as N2 gas, to suppress particle generation. For example, one method is to supply purge gas from the side of the vacuum transfer chamber opposite the side connected to the load-lock module and exhaust the purge gas from the side connected to the load-lock module. The purge gas purges the atmosphere in the processing chamber, which is brought in by opening a gate valve or moving the arm of the transfer mechanism when a substrate is unloaded from the vacuum transfer chamber while maintained in a reduced-pressure atmosphere. Particles in the vacuum transfer chamber are exhausted from the exhaust port by the purge gas flow.

[0003] In addition, in order to suppress the generation of particles inside the vacuum transfer chamber, it has been proposed to add an accessory module that cleans the film caused by residual gas adhering to the arm of the transfer mechanism (Patent Document 1).In addition, in order to remove particles that have accumulated inside the chamber, it has been proposed to provide an electrode on the substrate transfer section and apply a high voltage, which causes electrostatic stress to act on the surface inside the chamber, thereby detaching the accumulated foreign matter and removing it with a gas flow (Patent Document 2). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-164213 [Patent Document 2] Japanese Patent Application Laid-Open No. 2005-317783 Summary of the Invention [Problem to be solved by the invention]

[0005] The present disclosure provides a substrate processing apparatus, a method for controlling a purge gas, and a method for cleaning a vacuum transfer chamber, which can prevent particles from accumulating by eliminating gas stagnation. [Means for solving the problem]

[0006] A substrate processing apparatus according to one embodiment of the present disclosure includes a vacuum transfer chamber having a top surface, a bottom surface opposite the top surface, and side surfaces between the top surface and the bottom surface, the side surfaces having a first side surface and a second side surface opposite the first side surface; a transfer robot arranged in the vacuum transfer chamber and transferring a substrate; a load lock module connected to the first side surface; a pipe connected to a purge gas supply source and supplying purge gas into the vacuum transfer chamber; at least one gas port provided on the top surface near the second side surface and connected to the pipe; and at least one exhaust port provided on the bottom surface near the first side surface of the vacuum transfer chamber and connected to an exhaust pump for exhausting the purge gas supplied to the vacuum transfer chamber. [Effects of the Invention]

[0007] According to the present disclosure, the accumulation of particles can be suppressed by eliminating gas stagnation. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a transverse cross-sectional view showing an example of a substrate processing apparatus according to a first embodiment of the present disclosure. [Figure 2] FIG. 2 is a diagram showing an example of a piping system to a vacuum transfer chamber in the first embodiment. [Figure 3] FIG. 3 is a diagram showing an example of a purge gas sequence in the first embodiment. [Figure 4] FIG. 4 is a diagram showing an example of an experimental result in the first embodiment. [Figure 5] FIG. 5 is a diagram showing an example of an experimental result in the first embodiment. [Figure 6] FIG. 6 is a diagram showing an example of the experimental results in the reference example. [Figure 7]FIG. 7 is a diagram showing an example of the experimental results in the reference example. [Figure 8] FIG. 8 is a diagram showing an example of a piping system to a vacuum transfer chamber in the first modification. [Figure 9] FIG. 9 is a diagram showing an example of a purge gas sequence in the first modification. [Figure 10] FIG. 10 is a diagram showing an example of a piping system to a vacuum transfer chamber in the second modification. [Figure 11] FIG. 11 is a diagram showing an example of a purge gas sequence in the second modification. [Figure 12] FIG. 12 is a diagram showing an example of a piping system to a vacuum transfer chamber in the third modification. [Figure 13] FIG. 13 is a diagram showing an example of a purge gas sequence in the third modification. [Figure 14] FIG. 14 is a diagram showing an example of a valve opening / closing sequence in the second embodiment. [Figure 15] FIG. 15 is a diagram showing an example of an experimental result in the second embodiment. [Figure 16] FIG. 16 is a diagram showing an example of an experimental result in the second embodiment. [Figure 17] FIG. 17 is a diagram showing an example of an experimental result in the second embodiment. [Figure 18] FIG. 18 is a diagram showing an example of an experimental result in the second embodiment. [Figure 19] FIG. 19 is a diagram showing an example of an experimental result in the second embodiment. [Figure 20] FIG. 20 is a diagram showing an example of a valve opening / closing sequence in the fourth modification. [Figure 21] FIG. 21 is a diagram showing an example of a valve opening / closing sequence in the fifth modification. [Figure 22] FIG. 22 is a diagram showing an example of a valve opening / closing sequence in the sixth modification. [Figure 23] FIG. 23 is a diagram showing an example of a valve opening / closing sequence in the seventh modification. [Figure 24]FIG. 24 is a diagram showing an example of a valve opening / closing sequence in the eighth modification. [Figure 25] FIG. 25 is a diagram showing an example of a valve opening / closing sequence in the ninth modification. [Figure 26] FIG. 26 is a diagram showing an example of a valve opening / closing sequence in the tenth modification. [Figure 27] FIG. 27 is a diagram showing an example of a valve opening / closing sequence in the eleventh modification. [Figure 28] FIG. 28 is a diagram showing an example of a valve opening / closing sequence in the twelfth modification. [Figure 29] FIG. 29 is a diagram showing an example of a piping system to a vacuum transfer chamber in the thirteenth modification. [Figure 30] FIG. 30 is a diagram showing an example of a valve opening / closing sequence in the thirteenth modification. [Figure 31] FIG. 31 is a diagram showing an example of an experimental result in the thirteenth modification. [Figure 32] FIG. 32 is a diagram showing an example of an experimental result in the thirteenth modification. [Figure 33] FIG. 33 is a diagram showing an example of an experimental result in the thirteenth modification. [Figure 34] FIG. 34 is a diagram showing an example of an experimental result in the thirteenth modification. [Figure 35] FIG. 35 is a diagram showing an example of an experimental result in the thirteenth modification. [Figure 36] FIG. 36 is a diagram showing an example of a valve opening / closing sequence in the fourteenth modification. [Figure 37] FIG. 37 is a diagram showing an example of a valve opening / closing sequence in the fifteenth modification. [Figure 38] FIG. 38 is a diagram showing an example of a valve opening / closing sequence in the sixteenth modification. [Figure 39] FIG. 39 is a diagram showing an example of a valve opening / closing sequence in the seventeenth modification. [Figure 40] FIG. 40 is a diagram showing an example of a valve opening / closing sequence in the eighteenth modification. [Figure 41] FIG. 41 is a diagram showing an example of a valve opening / closing sequence in the nineteenth modification. [Figure 42] FIG. 42 is a diagram showing an example of a valve opening / closing sequence in the 20th modification. [Figure 43] FIG. 43 is a diagram showing an example of a valve opening / closing sequence in the twenty-first modification. [Figure 44] FIG. 44 is a diagram showing an example of a valve opening / closing sequence in the twenty-second modification. [Figure 45] FIG. 45 is a top view showing an example of the arrangement of gas ports in the vacuum transfer chamber of the first embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments of the disclosed substrate processing apparatus, purge gas control method, and vacuum transfer chamber cleaning method will be described in detail with reference to the accompanying drawings. Note that the disclosed technology is not limited to the following embodiments.

[0010] In the vacuum transfer chamber, an airflow atmosphere flows from the purge gas supply side to the exhaust side. However, if the vacuum transfer chamber is wide, the airflow atmosphere may not be uniform. If the airflow atmosphere is not uniform, the atmosphere inside the processing chamber may be carried away when a processed substrate is unloaded from the processing chamber, resulting in outgas accumulation. Outgas accumulation can cause particle generation inside the vacuum transfer chamber. Furthermore, if the purge gas flow rate is insufficient when a processed substrate is unloaded from the processing chamber, the atmosphere inside the processing chamber may be carried away into the vacuum transfer chamber, and the residual gas may react with moisture in the vacuum transfer chamber, resulting in condensed particles. Therefore, eliminating gas stagnation is expected to suppress particle accumulation.

[0011] (First embodiment) [Configuration of substrate processing apparatus 1] 1 is a cross-sectional view showing an example of a substrate processing apparatus according to a first embodiment of the present disclosure. The substrate processing apparatus 1 shown in FIG. 1 is a substrate processing apparatus capable of performing various processes such as plasma processing on wafers (e.g., semiconductor wafers) one by one.

[0012] The substrate processing apparatus 1 includes an apparatus main body 10 and a control device 100 that controls the apparatus main body 10. As shown in Fig. 1, the apparatus main body 10 includes a vacuum transfer chamber 11, a plurality of process modules 13, a plurality of load lock modules 15, and an Equipment Front End Module (EFEM) 18. In the following description, the vacuum transfer chamber 11 will also be referred to as a VTM (Vacuum Transfer Module) 11, the process modules 13 as PMs (Process Modules) 13, and the load lock modules 15 as LLMs (Load Lock Modules) 15.

[0013] The VTM 11 has a substantially rectangular shape in a plan view. A plurality of PMs 13 are connected to each of two opposing side surfaces of the VTM 11. An LLM 15 is connected to one of the other two opposing side surfaces of the VTM 11. That is, the VTM 11 has a top surface, a bottom surface opposite the top surface, and a side surface between the top surface and the bottom surface, and the side surface has a first side surface and a second side surface opposite the first side surface. The LLM 15 is connected to the first side surface. The VTM 11 has a vacuum chamber, and a robot arm 12 is disposed inside.

[0014] The robot arm 12 is configured to be able to rotate, extend, and move up and down freely. The robot arm 12 can transfer wafers between the PM 13 and the LLM 15 by placing the wafer on a fork located at the tip of the robot arm 12. The robot arm 12 is an example of a vacuum transfer robot. Note that the robot arm 12 is not limited to the configuration shown in FIG. 1 as long as it is capable of transferring wafers between the PM 13 and the LLM 15. An electrode for applying a high voltage is also provided inside the robot arm 12.

[0015] The PM 13 has a processing chamber and a cylindrical stage (mounting table) placed inside. After a wafer is placed on the stage, the PM 13 reduces the pressure inside, introduces processing gas, and applies high-frequency power inside to generate plasma, which then processes the wafer. The VTM 11 and the PM 13 are separated by a gate valve 14 that can be opened and closed freely.

[0016] The LLM 15 is located between the VTM 11 and the EFEM 18. The LLM 15 has an internal pressure variable chamber whose interior can be switched between vacuum and atmospheric pressure, and a cylindrical stage located inside. When transferring a wafer from the EFEM 18 to the VTM 11, the LLM 15 maintains its interior at atmospheric pressure, receives the wafer from the EFEM 18, and then reduces the internal pressure before transferring the wafer to the VTM 11. When transferring a wafer from the VTM 11 to the EFEM 18, the LLM 15 maintains its interior at vacuum, receives the wafer from the VTM 11, and then increases the internal pressure to atmospheric pressure before transferring the wafer to the EFEM 18. The LLM 15 and the VTM 11 are separated by a gate valve 16 that can be opened or closed. The LLM 15 and the EFEM 18 are also separated by a gate valve 17 that can be opened or closed.

[0017] The EFEM 18 is disposed opposite the VTM 11. The EFEM 18 is a rectangular parallelepiped atmospheric transfer chamber equipped with an FFU (Fan Filter Unit) and maintained at atmospheric pressure. Three LLMs 15 are connected to one longitudinal side of the EFEM 18. Five load ports (LPs) 19 are connected to the other longitudinal side of the EFEM 18. A FOUP (Front-Opening Unified Pod) (not shown), which is a container for accommodating multiple wafers, is placed on the LPs 19. An atmospheric transfer robot (robot arm) (not shown) that transfers wafers is disposed within the EFEM 18. The EFEM 18 is an example of a loader module.

[0018] The substrate processing apparatus 1 includes a control device 100. The control device 100 is, for example, a computer, and includes a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), an auxiliary storage device, etc. The CPU operates based on a program stored in the ROM or the auxiliary storage device, and controls the operation of each component of the substrate processing apparatus 1.

[0019] [Details of the piping system to VTM11] Fig. 2 is a diagram showing an example of a piping system to a vacuum transfer chamber in the first embodiment. Note that in Fig. 2, the VTM 11 is shown as being divided into two for the purpose of explaining the piping system, but in reality, there is a piping system to one VTM 11.

[0020] 2, the VTM 11 is located on a second side surface opposite the first side surface to which the LLM 15 is connected, and has a gas port 30 provided on the upper surface at the center of the second side surface and gas ports 31 and 32 provided on the upper surface on both sides of the center of the second side surface. The VTM 11 also has gas ports 33 to 38 provided at the connection portions 14a of the gate valves 14 corresponding to the PMs 13, and gas ports 39 to 41 provided at the connection portions of the gate valves 16 corresponding to the LLM 15. The VTM 11 also has an exhaust port 42 at the center of the lower surface on the first side surface.

[0021] The dry air supply source 50 is connected to the gas port 30 via a regulator 51, a pipe 52, and a valve 53. The regulator 51 adjusts the pressure of the dry air supplied to the pipe 52. The valve 53 controls whether to supply or stop the dry air to the gas port 30. The purge gas supply source 54 is connected to the pipe 52 on the VTM 11 side of the valve 53 via a regulator 55, a pipe 56, and a valve 57. The regulator 55 adjusts the pressure of the purge gas supplied to the pipe 56. The valve 57 controls whether to supply or stop the purge gas to the gas port 30.

[0022] Pipe 58 branches off from pipe 56, and pipes 59 and 63 branch off from pipe 58. Pipe 59 is connected to gas ports 30-32, 39, and 40 via an MFC (Mass Flow Controller) 60, a filter 61, and a valve 62. Pipe 59 branches off into pipes 59a-59e corresponding to gas ports 30-32, 39, and 40, respectively, on the VTM 11 side of valve 62. MFC 60 is a flow rate controller that controls the flow rate of purge gas in pipe 59. Filter 61 is a filter for removing particles and the like from the purge gas. Valve 62 controls the supply / stop of purge gas to gas ports 30-32, 39, and 40. MFC 60 is an example of a first mass flow controller, and pipe 59 is an example of a first pipe.

[0023] The pipe 63 is connected to the gas ports 39 to 41 via an MFC 64, a filter 65, and a valve 66. The pipe 63 branches into pipes 63a to 63c corresponding to the gas ports 39 to 41, respectively, on the VTM 11 side of the valve 66. The pipes 63a to 63c are provided with valves 67a to 67c, respectively. The MFC 64 controls the flow rate of the purge gas in the pipe 63. The filter 65 is a filter for removing particles and the like from the purge gas. The valve 66 controls the supply / stop of the purge gas to the gas ports 39 to 41. The MFC 64 is an example of a second mass flow controller, and the pipe 63 is an example of a second pipe.

[0024] Pipe 58, after branching from pipe 63, is connected to gas ports 33 to 38 via MFC 68, filter 69, and valve 70. Pipe 58 branches into pipes 58a to 58f corresponding to gas ports 33 to 38, respectively, on the VTM 11 side of valve 70. Pipes 58a to 58f are provided with valves 71a to 71f, respectively. MFC 68 controls the flow rate of purge gas in pipe 58, after branching from pipe 63. Filter 69 is a filter for removing particles and the like from the purge gas. Valve 70 controls the supply / stop of purge gas to gas ports 33 to 38. MFC 68 is an example of a third mass flow controller, and pipe 58, after branching from pipe 63, is an example of a third pipe.

[0025] The dry air supply source 50 supplies dry air into the VTM 11, for example, when the VTM 11 is open to the atmosphere. The purge gas supply source 54 supplies purge gas to the gas port 30 via pipes 56 and 52. The purge gas supply source 54 also supplies purge gas to the gas ports 30 to 41 via pipes 58, 59, and 63. The supply of purge gas to the gas ports 30 to 41 via pipes 58, 59, and 63 is always performed during normal operation. N2 gas can be used as the purge gas. Note that the supply of purge gas via pipes 56 and 52 is performed, for example, during cleaning, but not during normal operation. Alternatively, the pipe 58 may be connected to the regulator 55 without providing the pipe 56 and valve 57.

[0026] An exhaust pipe 80 is connected to the exhaust port 42. The exhaust pipe 80 is connected to an APC (Automatic Pressure Control) 82 and a TMP (Turbo Molecular Pump) 83 via a valve 81. The TMP 83 is connected to a dry pump 84. A valve 85 is provided in the pipe that bypasses the APC 82 and TMP 83 and connects to the dry pump 84. The APC 82 is an automatic pressure control valve that is a variable butterfly valve, and automatically controls the pressure inside the VTM 11. The TMP 83 and dry pump 84 are exhaust pumps used for vacuuming; when decompression from atmospheric pressure begins, the valve 85 is opened and exhaust is performed only by the dry pump 84, and as the pressure is reduced, the valve 85 is closed and exhaust is performed by the TMP 83 and dry pump 84.

[0027] [Purge gas control method] Next, a purge gas control method according to the first embodiment will be described. Fig. 3 is a diagram showing an example of a purge gas sequence according to the first embodiment. In Fig. 3, MFC 60 (first mass flow controller) is represented as "MFC1", MFC 64 (second mass flow controller) is represented as "MFC2", and MFC 68 (third mass flow controller) is represented as "MFC3".

[0028] 3, the state of the vacuum transfer chamber is represented as "idle / transferring" when it is idle or in transfer. Similarly, the state of the vacuum transfer chamber is represented as "LLM exchange" when gate valve 16 is opened to transfer wafers to and from LLM 15, and as "PM exchange" when gate valve 14 is opened to transfer wafers to and from PM 13.

[0029] First, as an initial state, the VTM 11 is in an idle state (step S1), and valves 53 and 57 are closed. The flow rate of the MFC 60 is set to a predetermined flow rate (100%), for example, 1000 sccm, and valve 62 is open. Purge gas is supplied so that the total flow rate of gas ports 30-32 and the total flow rate of gas ports 39 and 40 are equal. Meanwhile, the flow rates of MFC 64 and MFC 68 are controlled to 0%. The valve disc of the APC 82 is set to a predetermined opening / closing angle, and the pressure inside the VTM 11 is adjusted to a predetermined pressure (for example, 50 mTorr). At this time, the purge gas flows from the second side surface opposite the first side surface to which the LLM 15 is connected toward the first side surface and is exhausted from exhaust port 42 located on the underside of the first side surface.

[0030] When the gate valve 16 is opened to transfer wafers to and from the LLM 15 (step S2), the control device 100 keeps the flow rate of the MFC 60 at 100%. The control device 100 also keeps the flow rates of the MFC 64 and MFC 68 at 0%. Note that the control device 100 may perform ramp control on the flow rate of the MFC 64 to change it to a predetermined flow rate (100%), as indicated by the dotted line in FIG. 3. When performing ramp control, the valves 67a to 67c are open, and purge gas is supplied from the gas ports 39 to 41. The control device 100 also controls the APC 82 to continue adjusting the pressure by specifying an angle.

[0031] The controller 100 moves the wafer into the VTM 11 using the robot arm 12 and closes the gate valve 16. The controller 100 then transports the wafer using the robot arm 12 from just before the gate valve 16 to just before the gate valve 14 of the PM 13 at the transport destination. While the wafer is being transported in this manner (step S3), the controller 100 keeps the flow rate of the MFC 60 at 100%. The controller 100 also sets the flow rates of the MFC 64 and MFC 68 to 0%. The controller 100 continues to control the APC 82 to adjust the pressure by specifying the angle.

[0032] When the control device 100 opens the gate valve 14 to load or unload wafers to or from the PM 13 (step S4), the flow rate of the MFC 60 remains at 100%. The control device 100 also leaves the flow rate of the MFC 64 at 0%. Meanwhile, the control device 100 ramps the flow rate of the MFC 68 to a predetermined flow rate (100%). At this time, the valves 71a to 71f are open, and purge gas is supplied from the gas ports 33 to 38. This makes it possible to suppress turbulence in the airflow inside the VTM 11 caused by the flow of purge gas toward the PM 13. The control device 100 continues to control the APC 82 to adjust the pressure by specifying the angle.

[0033] After placing the wafer in the PM 13, the controller 100 moves the robot arm 12 into the VTM 11 and closes the gate valve 14. The VTM 11 returns to the idle state (step S1). In this case, as in step S3, the controller 100 maintains the flow rate of the MFC 60 at 100%. The controller 100 also maintains the flow rates of the MFC 64 and MFC 68 at 0%. The controller 100 continues to control the APC 82 to adjust the pressure by specifying an angle. This uniforms the flow of purge gas within the VTM 11, eliminating stagnation of purge gas containing residual gas components and suppressing particle accumulation. Furthermore, deposits are less likely to adhere to the side walls within the VTM 11.

[0034] As described above, the VTM 11 is provided with at least one gas port (gas ports 30-32) on its top surface near the second side surface. The gas port is connected to the purge gas supply source 54 and to a pipe 59 that supplies purge gas into the VTM 11. The purge gas supplied from the gas port is exhausted from at least one exhaust port 42, which is provided on the bottom surface near the first side surface of the VTM 11 and to which a TMP 83 and a dry pump 84 are connected, which exhaust the purge gas supplied to the VTM 11. In other words, the at least one gas port (gas ports 30-32) and the exhaust port 42 are arranged so that the purge gas flow is directed from the second side surface to the first side surface.

[0035] "Near the second side" refers to the portion of the top surface closest to the second side when the distance from the first side to the second side is divided into eight equal parts in that direction (a portion extending from the second side toward the first side, up to 12.5% ​​of the way). More preferably, the gas port may be located in the portion of the top surface closest to the second side when the distance from the first side to the second side is divided into ten equal parts (a portion extending from the second side toward the first side, up to 10% of the way). Even more preferably, the gas port may be located in the portion of the top surface closest to the second side when the distance from the first side to the second side is divided into 20 equal parts (a portion extending from the second side toward the first side, up to 5% of the way). Instead of being located near the second side surface, at least one gas port (gas ports 30-32) may be located in a portion of the second side surface closer to the top surface (up to 50% of the way from the top surface toward the bottom surface) when the second side surface is divided into two equal parts from the bottom surface to the top surface of VTM 11. Providing the gas port closer to the second side surface can reduce the area to which purge gas is not supplied, which is desirable from the viewpoint of equalizing the airflow atmosphere over a wide area.

[0036] FIG. 45 is a top view showing an example of the arrangement of gas ports in the vacuum transfer chamber of the first embodiment. FIG. 45 shows a top view of the configuration of the substrate processing apparatus 1 (excluding the EFEM 18 and LP 19). As shown in FIG. 45, for example, in the example of dividing into eight equal parts, when the line segment AB between the first side surface 11a and the second side surface 11b is divided into eight equal parts, the gas ports are provided on the top surface closest to the second side surface 11b, i.e., the shaded portion. Similarly, in the example of dividing into ten equal parts or twenty equal parts, when the line segment AB in FIG. 45 is divided into ten equal parts or twenty equal parts, the gas ports are provided on the top surface closest to the second side surface 11b.

[0037] The VTM 11 may be rectangular in plan view, or the second side 11b may be composed of two sides, as shown in the second side 11c, and may be polygonal in plan view, for example, a pentagon.

[0038] The VTM 11 may have at least one gas port (gas ports 39-41) connected to the pipe 59 provided on the top surface near the first side surface, and the exhaust port 42 provided on the bottom surface near the second side surface. In other words, the at least one gas port (gas ports 39-41) and the exhaust port 42 may be positioned so that the purge gas flow is directed from the first side surface to the second side surface.

[0039] "Near the first side surface" refers to the portion of the top surface closest to the first side surface (a portion extending from the first side surface toward the second side surface) when the top surface is divided into eight equal parts from the first side surface to the second side surface, and the gas port is located in this portion. More preferably, the gas port may be located in the portion of the top surface closest to the first side surface (a portion extending from the first side surface toward the second side surface) when the top surface is divided into ten equal parts from the second side surface to the first side surface. Even more preferably, the gas port may be located in the portion of the top surface closest to the first side surface (a portion extending from the first side surface toward the second side surface) when the top surface is divided into twenty equal parts from the second side surface to the first side surface. That is, in the vicinity of the first side surface, for example, in the example of dividing into eight equal parts, when the line segment AB between the first side surface 11a and the second side surface 11b is divided into eight equal parts, a gas port is provided on the top surface closest to the first side surface 11a, as shown in Fig. 45. Similarly, in the example of dividing into ten equal parts or twenty equal parts, when the line segment AB in Fig. 45 is divided into ten equal parts or twenty equal parts, a gas port is provided on the top surface closest to the first side surface 11a.

[0040] When at least one gas port (gas ports 30-32) is located near the second side surface, exhaust port 42 is located near the first side surface. In other words, exhaust port 42 is located in the portion of the bottom surface closest to the first side surface (up to 12.5% ​​of the distance from the first side surface toward the second side surface) when the bottom surface is divided into eight equal parts from the first side surface to the second side surface. More preferably, exhaust port 42 may be located in the portion of the bottom surface closest to the first side surface (up to 10% of the distance from the first side surface toward the second side surface) when the bottom surface is divided into ten equal parts from the second side surface to the first side surface. Even more preferably, exhaust port 42 may be located in the portion of the bottom surface closest to the first side surface (up to 5% of the distance from the first side surface toward the second side surface) when the bottom surface is divided into twenty equal parts from the second side surface to the first side surface. 45, for example, in the example of dividing into eight equal parts, when the line segment AB between the first side surface 11a and the second side surface 11b is divided into eight equal parts, the exhaust outlet 42 is provided on the bottom surface closest to the first side surface 11a. Similarly, in the example of dividing into ten equal parts or twenty equal parts, when the line segment AB in FIG. 45 is divided into ten equal parts or twenty equal parts, the exhaust outlet 42 is provided on the bottom surface closest to the first side surface 11a.

[0041] Furthermore, when at least one gas port (gas ports 30-32) is located near the first side surface, exhaust port 42 is located near the second side surface. In other words, exhaust port 42 is located in the portion of the bottom surface closest to the second side surface (a portion extending from the second side surface toward the first side surface) when the distance from the first side surface to the second side surface is divided into eight equal parts in that direction. More preferably, exhaust port 42 may be located in the portion of the bottom surface closest to the second side surface (a portion extending from the second side surface toward the first side surface) when the distance from the second side surface to the first side surface is divided into ten equal parts. Even more preferably, exhaust port 42 may be located in the portion of the bottom surface closest to the second side surface (a portion extending from the second side surface toward the first side surface) when the distance from the second side surface to the first side surface is divided into twenty equal parts in that direction.

[0042] [Experimental Results] Next, an experimental example and a reference example in the first embodiment using simulation will be described with reference to Fig. 4 to Fig. 7. Fig. 4 and Fig. 5 are diagrams showing an example of experimental results in the first embodiment. Fig. 6 and Fig. 7 are diagrams showing an example of experimental results in the reference example. Note that in Fig. 4 to Fig. 7, there are parts where the airflow extends outside the VTM 11, etc., but this is just an expression in the simulation, and in reality the airflow does not extend outside the VTM 11, etc.

[0043] 4 and 5, purge gas was supplied into VTM 11 at 100 sccm through gas port 30, 200 sccm through gas ports 31 and 32, and 250 sccm through gas ports 39 and 40, and exhausted from exhaust port 42. As a result, the flow of purge gas inside VTM 11 became uniform, and there was a flow of purge gas even near the surface where PM 13 was connected.

[0044] 6 and 7, 1000 sccm of purge gas was supplied to the VTM 120 through the gas port 121 and exhausted through the exhaust port 122. As a result, the flow of purge gas within the VTM 120 was not uniform, and there were areas where the purge gas accumulated at the four corners of the VTM 120. There was also an area where the purge gas accumulated at the connection with the PM 13. As such, it can be seen that the purge gas flowed more uniformly throughout the entire VTM 11 in the experimental example than in the reference example.

[0045] [Variation 1] In the above embodiment, the purge gas is supplied into the VTM 11 using three pipes, namely, pipes 58, 59, and 63, but pipes 58 and 63 may be combined into one system, and this embodiment will be described as Modification 1. Note that the substrate processing apparatus in Modification 1 is similar to the substrate processing apparatus 1 of the above embodiment, and therefore, a description of the overlapping configuration and operation will be omitted.

[0046] FIG. 8 is a diagram showing an example of a piping system to a vacuum transfer chamber in Modification 1. As shown in FIG. 8, the piping system in Modification 1 has piping 59 similar to that of the above embodiment, but includes piping 90 instead of piping 58 and piping 63 branched from piping 59. Pipe 90 is connected to gas ports 33 to 41 via MFC 91, filter 92, and valve 93. Pipe 90 branches into piping 90a to 90i corresponding to gas ports 33 to 41, respectively, on the VTM 11 side of valve 93. Furthermore, valves 94a to 94i are provided on piping 90a to 90i, respectively. MFC 91 controls the flow rate of purge gas in piping 90. Filter 92 is a filter for removing particles and the like from the purge gas. Valve 93 controls the supply / stop of purge gas to gas ports 33 to 41. The valves 94a to 94i individually control the supply / stop of purge gas to the gas ports 33 to 41 through the pipes 90a to 90i, respectively. The MFC 91 is an example of a fourth mass flow controller, and the pipe 90 is an example of a fourth pipe. Alternatively, the pipe 58 may be connected to the regulator 55 without providing the pipe 56 and the valve 57.

[0047] [Modification 1 of Purge Gas Control Method] Next, a purge gas control method according to Modification 1 will be described. Fig. 9 is a diagram showing an example of a purge gas sequence in Modification 1. In Fig. 9, MFC60 (first mass flow controller) is represented as "MFC1" and MFC91 (fourth mass flow controller) is represented as "MFC4." In Fig. 9, the states of the vacuum transfer chamber are represented as "idle / transferring," "LLM replacement," and "PM replacement," similar to Fig. 3.

[0048] First, as an initial state, the VTM 11 is in an idle state (step S11), and valves 53 and 57 are closed. The flow rate of the MFC 60 is set to a predetermined flow rate (100%), for example, 1000 sccm, and valve 62 is open. Purge gas is supplied so that the total flow rate of gas ports 30-32 and the total flow rate of gas ports 39 and 40 are equal. Meanwhile, the flow rate of the MFC 91 is controlled to 0%. The valve disc of the APC 82 is set to a predetermined opening / closing angle, and the pressure inside the VTM 11 is adjusted to a predetermined pressure (for example, 50 mTorr). At this time, the purge gas flows from the second side surface opposite the first side surface to which the LLM 15 is connected toward the first side surface and is exhausted from exhaust port 42 located on the underside of the first side surface.

[0049] When the control device 100 opens the gate valve 16 to load or unload wafers to or from the LLM 15 (step S12), the flow rate of the MFC 60 remains at 100%. The control device 100 ramps the flow rate of the MFC 91 to a predetermined flow rate (100%). At this time, the valves 94a to 94i are open, and purge gas is supplied from the gas ports 33 to 41. Note that the valves 94a to 94f are on the PM 13 side, so they may be closed, and purge gas may be supplied from the gas ports 39 to 41. The control device 100 also continues to control the APC 82 to adjust the pressure by specifying an angle.

[0050] The controller 100 moves the wafer into the VTM 11 using the robot arm 12 and closes the gate valve 16. The controller 100 then transports the wafer using the robot arm 12 from just before the gate valve 16 to just before the gate valve 14 of the PM 13 at the transport destination. While the wafer is being transported in this manner (step S13), the controller 100 keeps the flow rate of the MFC 60 at 100%. The controller 100 also sets the flow rate of the MFC 91 to 0%. The controller 100 continues to control the APC 82 to adjust the pressure by specifying the angle.

[0051] When the control device 100 opens the gate valve 14 to load or unload wafers between the PM 13 (step S14), the flow rate of the MFC 60 remains at 100%. The control device 100 ramps the flow rate of the MFC 91 to a predetermined flow rate (100%). At this time, the valves 94a to 94i are open, and purge gas is supplied from the gas ports 33 to 41. Note that the valves 94g to 94i are on the LLM 15 side, so they may be closed, and purge gas may be supplied from the gas ports 33 to 38. This can suppress turbulence in the airflow inside the VTM 11 caused by the purge gas flowing toward the PM 13. The control device 100 continues to control the APC 82 to adjust the pressure by specifying the angle.

[0052] After placing the wafer in the PM 13, the controller 100 moves the robot arm 12 into the VTM 11 and closes the gate valve 14. The VTM 11 returns to the idle state (step S11). In this case, as in step S13, the controller 100 keeps the flow rate of the MFC 60 at 100%. The controller 100 also keeps the flow rate of the MFC 91 at 0%. The controller 100 continues to control the APC 82 to adjust the pressure by specifying an angle. This makes the flow of purge gas within the VTM 11 uniform, eliminating stagnation of purge gas containing residual gas components and suppressing particle accumulation. Furthermore, the piping system can be reduced compared to the above embodiment.

[0053] [Variation 2] In the above-described embodiment and modified example 1, an MFC 60 is provided in the pipe 59 to control the flow rate of the purge gas discharged (supplied) from the gas ports 30-32, 39, and 40, but an orifice may be used instead of the MFC 60, and an embodiment in this case will be described as modified example 2. Note that the substrate processing apparatus in modified example 2 is similar to the substrate processing apparatus 1 in the above-described embodiment and modified example 1, and therefore, a description of the overlapping configuration and operation will be omitted.

[0054] FIG. 10 is a diagram showing an example of a piping system to a vacuum transfer chamber in Modification 2. As shown in FIG. 10, the piping system in Modification 2 has an orifice 95 instead of MFC 60, as compared to Modification 1. The piping system in Modification 2 is the same as Modification 1 except for the orifice 95. The orifice 95 sets the purge gas in piping 59 to a predetermined flow rate. The piping 59 having the orifice 95 is an example of a fifth piping, the valve 62 provided in the piping 59 having the orifice 95 is an example of a first valve, and the orifice 95 is an example of a first orifice. The piping 58 may be connected to the regulator 55 without providing the piping 56 and the valve 57.

[0055] [Modification 2: Purge Gas Control Method] Next, a method of controlling purge gas according to Modification 2 will be described. Fig. 11 is a diagram showing an example of a purge gas sequence in Modification 2. In Fig. 11, the orifice 95 (first orifice) is represented as "orifice 1," and the MFC 91 (fourth mass flow controller) is represented as "MFC4." In Fig. 11, the states of the vacuum transfer chamber are represented as "idle / transferring," "LLM replacement," and "PM replacement," similar to Fig. 3.

[0056] First, as an initial state, the VTM 11 is in an idle state (step S21), and valves 53 and 57 are closed. The orifice 95 is set to a predetermined flow rate (represented as 100% in FIG. 11 ), for example, 1000 sccm. Valve 62 is open, and purge gas is supplied so that the total flow rate of gas ports 30-32 and the total flow rate of gas ports 39 and 40 are equal. Meanwhile, the flow rate of the MFC 91 is controlled to 0%. The valve disc of the APC 82 is set to a predetermined opening / closing angle, and the pressure inside the VTM 11 is adjusted to a predetermined pressure (for example, 50 mTorr). At this time, the purge gas flows from the second side surface opposite the first side surface to which the LLM 15 is connected toward the first side surface and is exhausted from the exhaust port 42 located on the underside of the first side surface.

[0057] When the gate valve 16 is opened to load or unload wafers to or from the LLM 15 (step S22), the flow rate of the orifice 95 cannot be changed and remains at 100%. Meanwhile, the controller 100 performs ramp control on the flow rate of the MFC 91 to change it to a predetermined flow rate (100%). At this time, the valves 94a to 94i are open, and purge gas is supplied from the gas ports 33 to 41. Note that the valves 94a to 94f are on the PM 13 side, so they may be closed and purge gas may be supplied from the gas ports 39 to 41. The controller 100 also controls the APC 82 to continue adjusting the pressure by specifying the angle.

[0058] The controller 100 moves the wafer into the VTM 11 using the robot arm 12 and closes the gate valve 16. The controller 100 then transports the wafer using the robot arm 12 from just before the gate valve 16 to just before the gate valve 14 of the PM 13 at the transport destination. While the wafer is being transported in this manner (step S23), the flow rate of the orifice 95 cannot be changed and remains at 100%. The controller 100 also sets the flow rate of the MFC 91 to 0%. The controller 100 continues to control the APC 82 to adjust the pressure by specifying the angle.

[0059] When the gate valve 14 is opened to load or unload wafers to or from the PM 13 (step S24), the flow rate of the orifice 95 cannot be changed and remains at 100%. The controller 100 performs ramp control on the flow rate of the MFC 91 to change it to a predetermined flow rate (100%). At this time, the valves 94a to 94i are open, and purge gas is supplied from the gas ports 33 to 41. Note that the valves 94g to 94i are on the LLM 15 side, so they may be closed and purge gas may be supplied from the gas ports 33 to 38. This can suppress turbulence in the airflow inside the VTM 11 caused by purge gas flowing toward the PM 13. The controller 100 continues to control the APC 82 to adjust the pressure by specifying the angle.

[0060] After placing the wafer in the PM 13, the controller 100 moves the robot arm 12 into the VTM 11 and closes the gate valve 14. The VTM 11 returns to the idle state (step S21). In this case, as in step S23, the flow rate of the orifice 95 cannot be changed and remains at 100%. The controller 100 also sets the flow rate of the MFC 91 to 0%. The controller 100 continues to control the APC 82 to adjust the pressure by specifying the angle. This makes the flow of purge gas within the VTM 11 uniform, eliminating the accumulation of purge gas containing residual gas components and suppressing the accumulation of particles. In addition, the piping system can be reduced compared to the above embodiment. Furthermore, since the MFC 60 is replaced with the inexpensive orifice 95, costs can be reduced compared to the above-mentioned first modification.

[0061] [Variation 3] In the above-described modified example 1, the pipe 90 is provided with the MFC 91, the filter 92, and the valve 93, and the pipe 90 branches into the pipes 90a to 90i on the VTM 11 side of the valve 93, but an orifice, a filter, and a valve may be provided in the branched pipe, and an embodiment in this case will be described as modified example 3. Note that the substrate processing apparatus in modified example 3 is similar to the substrate processing apparatus 1 in the above-described embodiment and modified example 1, and therefore, a description of the overlapping configuration and operation will be omitted.

[0062] FIG. 12 is a diagram showing an example of a piping system to a vacuum transfer chamber in Modification 3. As shown in FIG. 12, the piping system in Modification 3 has the same system as Modification 1, except for piping 59, which includes piping 96 instead of piping 90. Pipe 96 branches into pipes 96a to 96i corresponding to gas ports 33 to 41, respectively. Orifices 97a to 97i, filters 98a to 98i, and valves 94a to 94i are provided in pipes 96a to 96i, respectively. The orifices 97a to 97i set the purge gas in each pipe 96a to 96i to a predetermined flow rate. The filters 98a to 98i are filters for removing particles and the like from the purge gas. The valves 94a to 94i individually control the supply / stop of purge gas to gas ports 33 to 41 for each pipe 96a to 96i. The pipe 96 is an example of a sixth pipe, the orifices 97a to 97i are examples of second orifices, and the valves 94a to 94i are examples of second valves. Alternatively, the pipe 58 may be connected to the regulator 55 without providing the pipe 56 and the valve 57.

[0063] [Purge Gas Control Method of Modified Example 3] Next, a purge gas control method according to Modification 3 will be described. Fig. 13 is a diagram showing an example of a purge gas sequence in Modification 3. In Fig. 13, MFC 60 (first mass flow controller) is represented as "MFC1", and orifices 97a to 97i (second orifices) are represented as "orifice 2". In Fig. 13, the states of the vacuum transfer chamber are represented as "idle / transferring", "LLM replacement", and "PM replacement", similar to Fig. 3.

[0064] First, as an initial state, the VTM 11 is in an idle state (step S31), and valves 53 and 57 are closed. The flow rate of the MFC 60 is set to a predetermined flow rate (100%), for example, 1000 sccm, and valve 62 is opened. Purge gas is supplied so that the total flow rate of gas ports 30-32 and the total flow rate of gas ports 39 and 40 are equal. Meanwhile, the flow rate of pipes 96a-96i is controlled to 0% by closing valves 94a-94i. The valve disc of the APC 82 is set to a predetermined opening / closing angle, and the pressure inside the VTM 11 is adjusted to a predetermined pressure (for example, 50 mTorr). At this time, the purge gas flows from the second side surface opposite the first side surface to which the LLM 15 is connected toward the first side surface and is exhausted from exhaust port 42 located on the underside of the first side surface.

[0065] When the control device 100 opens the gate valve 16 to load or unload a wafer to or from the LLM 15 (step S32), the flow rate of the MFC 60 remains at 100%. The control device 100 opens the valves 94a to 94i. At this time, purge gas is supplied from the gas ports 33 to 41 at flow rates set by the orifices 97a to 97i, respectively. Note that the valves 94a to 94f are on the PM 13 side, so they may be closed and purge gas may be supplied from the gas ports 39 to 41. The control device 100 also controls the APC 82 to continue adjusting the pressure by specifying the angle.

[0066] The controller 100 moves the wafer into the VTM 11 using the robot arm 12 and closes the gate valve 16. The controller 100 then transports the wafer using the robot arm 12 from just before the gate valve 16 to just before the gate valve 14 of the PM 13 at the transport destination. While the wafer is being transported in this manner (step S33), the controller 100 keeps the flow rate of the MFC 60 at 100%. The controller 100 also closes the valves 94a to 94i and sets the flow rates to the gas ports 33 to 41 to 0%. The controller 100 continues to control the APC 82 to adjust the pressure by specifying the angle.

[0067] When the control device 100 opens the gate valve 14 to load or unload wafers to or from the PM 13 (step S34), the flow rate of the MFC 60 remains at 100%. The control device 100 opens the valves 94a to 94i. At this time, purge gas at flow rates set by the orifices 97a to 97i is supplied from the gas ports 33 to 41. Note that the valves 94g to 94i are on the LLM 15 side, so they may be closed and purge gas may be supplied from the gas ports 33 to 38. This can suppress turbulence in the airflow inside the VTM 11 caused by purge gas flowing toward the PM 13. The control device 100 continues to control the APC 82 to adjust the pressure by specifying the angle.

[0068] After placing the wafer in the PM 13, the controller 100 moves the robot arm 12 into the VTM 11 and closes the gate valve 14. The controller 100 returns to the idle state (step S31). In this case, as in step S33, the controller 100 maintains the flow rate of the MFC 60 at 100%. The controller 100 also closes the valves 94a-94i and sets the flow rate to the gas ports 33-41 at 0%. The controller 100 continues to control the APC 82 to adjust the pressure by specifying the angle. This uniformizes the flow of purge gas in the VTM 11 and eliminates the accumulation of purge gas containing residual gas components, thereby suppressing particle accumulation. Furthermore, the piping system can be reduced compared to the above embodiment. Furthermore, since the flow rate to the gas ports 33-41 is controlled by inexpensive orifices 97a-97i and valves 94a-94i instead of the MFC 91, costs can be reduced compared to the first modification.

[0069] (Second embodiment) In the first embodiment and modifications 1 to 3 described above, the flow of purge gas within the VTM 11 is made uniform to prevent particle accumulation, but the time it takes for particles to be discharged may be shortened, and this embodiment will be described as embodiment 2. Note that the substrate processing apparatus in the second embodiment is similar to the substrate processing apparatus 1 in modification 1 described above, and therefore a description of the overlapping configuration and operation will be omitted.

[0070] In the vacuum transfer chamber, an airflow atmosphere flows from the purge gas supply side to the exhaust side. However, if the vacuum transfer chamber is large, the purge gas flow weakens, and it takes time for particles to be exhausted to the exhaust port. This increases the cleaning time. Furthermore, because the purge gas flow weakens, there are areas in the vacuum transfer chamber where the shock waves from the purge gas do not reach. Therefore, it is expected that the shock waves from the purge gas will be distributed throughout the entire vacuum transfer chamber and the cleaning time of the vacuum transfer chamber will be shortened.

[0071] [Details of the piping system to VTM11] Next, differences between the substrate processing apparatus according to the second embodiment and the substrate processing apparatus 1 according to the first modification will be described. In the VTM 11 according to the second embodiment, the MFC 91 controls the flow rate of the purge gas to approximately 500 sccm or more for each of the gas ports 33 to 41 when the valves 94a to 94i are open. In addition, an MFC (not shown) is provided in the pipe 56, and controls the flow rate of the purge gas to approximately 500 sccm or more for the gas port 30 when the valve 57 is open. The gas port 30 is an example of a first gas port. The gas ports 33 to 41 are examples of second gas ports.

[0072] The purge gas supply source 54 supplies purge gas to the gas ports 30, 33 to 41 via pipes 56 and 90. The supply of purge gas to the gas ports 30, 33 to 41 via pipes 56 and 90 is performed during normal operation and when performing NPPC (Non-Plasma Process Cleaning), which is cleaning without using plasma. During normal operation, for example, purge gas is continuously flowed at a predetermined flow rate from the gas port 30. N2 gas can be used as the purge gas. In the second embodiment, the supply of purge gas during NPPC will be described.

[0073] The APC 82 is an automatic pressure control valve, a variable butterfly valve, that automatically controls the pressure inside the VTM 11. To impart a large viscous force to the purge gas supplied from the gas ports 30, 33-41, it is preferable to control the pressure inside the VTM 11 to, for example, 133 Pa (1 Torr) or higher. Pressure control may be performed by the APC 82 while exhausting with the TMP 83, or by controlling the gas flow rate of the purge gas while exhausting only with the dry pump 84 with the valve 85 open. A particle monitor (not shown) is connected directly below the valve 81 and monitors particles contained in the exhaust gas passing through the exhaust pipe 80. The particle monitor is an example of a particle detector. The particle monitor may not be installed if monitoring of particles contained in the exhaust gas is not required.

[0074] [Method for cleaning the vacuum transfer chamber 11] Next, a method for cleaning a vacuum transfer chamber according to a second embodiment will be described. In the second embodiment, the piping system to the VTM 11 uses the piping system in Modification 1 shown in FIG. 8. FIG. 14 is a diagram showing an example of a valve opening and closing sequence in the second embodiment. In FIG. 14, gas ports 33-40 and corresponding valves 94a-94h are operated as a pair, with the valves located opposite each other. Gas port 41 and valve 94i are not used in the valve opening and closing sequence shown in FIG. 14. In FIG. 14, the open state of a valve is represented as "open" and the closed state as "closed."

[0075] When cleaning the VTM 11, the control device 100 first controls the valve 57 to supply purge gas for a predetermined time from the first gas port 30, which is the farthest gas port from the exhaust port 42 of the VTM 11. The predetermined time can be, for example, 1 to 5 seconds. Note that the control device 100 may also clean the VTM 11 if a particle monitor (not shown) installed immediately after the valve 81 detects a particle count equal to or greater than a threshold value.

[0076] Next, the control device 100 controls the valves 94a and 94f to supply purge gas for a predetermined time from the pair of gas ports 33 and 38, which are second gas ports located closer to the LLM 15 than the gas port 30.

[0077] The control device 100 similarly supplies purge gas for a predetermined time from the gas port 30 toward the exhaust port 42, sequentially through the pair of gas ports 34 and 37, the pair of gas ports 35 and 36, and the pair of gas ports 39 and 40. In other words, the control device 100 controls the opening and closing of the valves in the following order: the pair of valves 94b and 94e, the pair of valves 94c and 94d, and the pair of valves 94g and 94h. This generates a viscous flow of purge gas within the VTM 11 from the gas port 30 toward the exhaust port 42, allowing shock waves (physical vibrations) of the purge gas to be distributed throughout the entire VTM 11, even if the VTM 11 is large. Furthermore, by efficiently moving particles within the VTM 11 toward the exhaust port 42, the cleaning time of the VTM 11 can be shortened.

[0078] [Experimental Results] Next, an experimental example in the second embodiment using a simulation will be described with reference to Figures 15 to 19. Figures 15 to 19 are diagrams showing an example of the experimental results in the second embodiment. Note that in Figures 15 to 19, there are parts where the airflow extends outside the VTM 11, but this is just an expression in the simulation, and in reality the airflow does not extend outside the VTM 11.

[0079] 15 shows the pressure distribution and flow of purge gas when purge gas is supplied for a predetermined time from the gas port 30. In this case, it can be seen that a shock wave reaches the wall surface of the VTM 11 near the gas port 30. Note that it is believed that simply supplying purge gas from the gas port 30 would not have caused the shock wave to reach the wall surface on the exhaust port 42 side of the VTM 11.

[0080] 16 shows the pressure distribution and flow of purge gas when purge gas is supplied for a predetermined time from the pair of gas ports 33 and 38. In this case, it can be seen that shock waves reach the wall surface of the VTM 11 near the gas ports 33 and 38, and the flow of purge gas toward the exhaust port 42 becomes stronger.

[0081] 17 shows the pressure distribution and flow of purge gas when purge gas is supplied for a predetermined time from the pair of gas ports 34, 37. In this case, it can be seen that a shock wave reaches the wall surface of the VTM 11 near the gas ports 34, 37, and the purge gas does not flow toward the gas port 30, but instead flows toward the exhaust port 42.

[0082] 18 shows the pressure distribution and flow of purge gas when purge gas is supplied for a predetermined time from the pair of gas ports 35, 36. In this case, it can be seen that a shock wave reaches the wall surface of the VTM 11 near the gas ports 35, 36, and the purge gas does not flow toward the gas port 30, but instead flows toward the exhaust port 42.

[0083] 19 shows the pressure distribution and flow of purge gas when purge gas is supplied for a predetermined time from a pair of gas ports 39, 40. In this case, a shock wave reaches the wall surface of the VTM 11 near the gas ports 39, 40, and the purge gas spreads near the exhaust port 42, but does not flow much toward the gas port 30, and instead flows toward the exhaust port 42. In this way, by supplying purge gas in order from FIG. 15 to FIG. 19, the viscous flow of the purge gas from the gas port 30 toward the exhaust port 42 efficiently moves particles inside the VTM 11 toward the exhaust port 42 and is discharged.

[0084] [Variations of valve opening and closing sequences] In the above-described embodiment, the purge gas supply sequences for gas port 30, the pair of gas ports 33 and 38, the pair of gas ports 34 and 37, the pair of gas ports 35 and 36, and the pair of gas ports 39 and 40 are non-overlapping. However, partial overlap or simultaneous supply between two pairs of gas ports is also possible. These embodiments will be described as Modifications 4 to 12. Note that, in Modifications 4 to 12, similar to the second embodiment, the gas ports 33 to 40 and the corresponding valves 94a to 94h are operated as a pair of valves located opposite each other. Furthermore, gas port 41 and valve 94i are not used in the valve opening and closing sequences shown in Modifications 4 to 12. Note that the substrate processing apparatus in Modifications 4 to 12 is similar to the substrate processing apparatus 1 of the second embodiment, and therefore, a description of the overlapping configurations and operations will be omitted.

[0085] [Variation 4] Fig. 20 is a diagram showing an example of a valve opening / closing sequence in Modification 4. In Modification 4 shown in Fig. 20, when cleaning the VTM 11, the control device 100 first controls the valve 57 to supply purge gas for a predetermined time from gas port 30, which is the first gas port located farthest from the exhaust port 42 of the VTM 11.

[0086] The control device 100 then controls the valves 94a and 94f to supply purge gas from the pair of gas ports 33 and 38 for a predetermined time.

[0087] The control device 100 similarly controls the pair of valves 94b and 94e so that purge gas is supplied from the pair of gas ports 34 and 37 from the gas port 30 side toward the exhaust port 42 side for a predetermined period of time.

[0088] Next, the control device 100 synchronizes the valves 94c, 94d and the valves 94g, 94h so that purge gas is simultaneously supplied for a predetermined time to the gas ports 35, 36 and the gas ports 39, 40. This makes it possible to suppress the flow of purge gas from the gas ports 39, 40 toward the gas port 30. Furthermore, the cleaning time can be shortened compared to the second embodiment.

[0089] [Variation 5] Fig. 21 is a diagram showing an example of a valve opening / closing sequence in Modification 5. In Modification 5 shown in Fig. 21, when cleaning the VTM 11, the control device 100 first controls the valve 57 to supply purge gas for a predetermined time from gas port 30, which is the first gas port located farthest from the exhaust port 42 of the VTM 11.

[0090] The control device 100 then controls the valves 94a and 94f to supply purge gas from the pair of gas ports 33 and 38 for a predetermined time before the lapse of a predetermined time at the gas port 30. In other words, while purge gas is being supplied from the gas port 30, the supply of purge gas from the pair of gas ports 33 and 38 begins.

[0091] The control device 100 then controls the pair of valves 94b and 94e to supply purge gas for a predetermined time from the pair of gas ports 34 and 37 before the predetermined time has elapsed for the pair of gas ports 33 and 38. In other words, while purge gas is being supplied from the pair of gas ports 33 and 38, supply of purge gas from the pair of gas ports 34 and 37 begins.

[0092] The control device 100 then controls the pair of valves 94c and 94d to supply purge gas for a predetermined time from the pair of gas ports 35 and 36 before the predetermined time has elapsed for the pair of gas ports 34 and 37. In other words, while purge gas is being supplied from the pair of gas ports 34 and 37, the supply of purge gas from the pair of gas ports 35 and 36 begins.

[0093] The control device 100 then controls the pair of valves 94g and 94h to supply purge gas from the pair of gas ports 39 and 40 for a predetermined time before the predetermined time has elapsed for the pair of gas ports 35 and 36. In other words, while purge gas is being supplied from the pair of gas ports 35 and 36, the supply of purge gas from the pair of gas ports 39 and 40 begins. This allows the viscous flow to continue from the gas port 30 side toward the exhaust port 42 side, making it easier for particles to flow toward the exhaust port 42 and reducing the number of particles returning to the gas port 30 side. Furthermore, because the times at which purge gas is supplied overlap, the cleaning time can be further shortened.

[0094] [Variation 6] 22 is a diagram showing an example of a valve opening and closing sequence in Modification 6. Modification 6 shown in Fig. 22 is a case in which the valve opening and closing sequence of Modification 5 is repeated. When cleaning the VTM 11, the control device 100 first controls the valve 57 to supply purge gas for a predetermined time from gas port 30, which is the first gas port located farthest from the exhaust port 42 of the VTM 11.

[0095] The control device 100 controls the valves 94a and 94f to supply purge gas for a predetermined time from the pair of gas ports 33 and 38 before the predetermined time has elapsed at the gas port 30. In other words, while purge gas is being supplied from the gas port 30, the control device 100 starts supplying purge gas from the pair of gas ports 33 and 38. Thereafter, as in the fifth modification, the control device 100 supplies purge gas from the pair of gas ports 33 and 38, the pair of gas ports 34 and 37, the pair of gas ports 35 and 36, and the pair of gas ports 39 and 40, with each supplying a predetermined time overlapping with the other.

[0096] When the supply of purge gas from the pair of gas ports 39 and 40 for a predetermined period of time is completed, the control device 100 again supplies purge gas to the gas port 30, the pair of gas ports 33 and 38, the pair of gas ports 34 and 37, the pair of gas ports 35 and 36, and the pair of gas ports 39 and 40, in this order, with each supply overlapping for a predetermined period of time. The number of times the valve opening and closing sequence from the gas port 30 to the pair of gas ports 39 and 40 is repeated is not limited. If a particle monitor is provided, the valve opening and closing sequence is repeated even if the particle amount does not fall below the reference value in one valve opening and closing sequence, and is terminated when the particle amount falls below the reference value. If a particle monitor is not provided, the valve opening and closing sequence may be repeated a predetermined number of times and then terminated.

[0097] [Variation 7] FIG. 23 is a diagram showing an example of a valve opening / closing sequence in Modification 7. Modification 7 shown in FIG. 23 is a case where, among the valve opening / closing sequences of Modification 5, purge gas is controlled to be supplied simultaneously for a predetermined time to the pair of gas ports 35, 36 and the pair of gas ports 39, 40. In other words, Modification 7 is a combination pattern of Modifications 4 and 5, and therefore a detailed description thereof will be omitted. Modification 7 can suppress the flow of purge gas from the pair of gas ports 39, 40 toward the gas port 30. Furthermore, Modification 7 can further shorten the cleaning time.

[0098] [Variation 8] FIG. 24 is a diagram showing an example of a valve opening and closing sequence in Modification 8. Modification 8 is a case in which the valve opening and closing sequence of Modification 7 is repeated in the same manner as Modification 6. As with Modification 6, Modification 8 does not limit the number of times a series of valve opening and closing sequences is repeated. If a particle monitor device is provided, even if the amount of particles does not fall below the reference value in one valve opening and closing sequence, the series of valve opening and closing sequences is repeated and terminated when the amount of particles falls below the reference value. If a particle monitor device is not provided, the series of valve opening and closing sequences may be repeated a predetermined number of times and then terminated.

[0099] [Variation 9] 25 is a diagram showing an example of a valve opening / closing sequence in Modification 9. In Modification 9 shown in Fig. 25, when cleaning the VTM 11, the control device 100 first controls the valve 57 to supply purge gas for a predetermined time from gas port 30, which is the first gas port located farthest from the exhaust port 42 of the VTM 11. The control device 100 repeats the supply of purge gas for the predetermined time from gas port 30 a predetermined number of times, for example, three times.

[0100] The control device 100 then controls the valves 94a and 94f to supply purge gas for a predetermined time from the pair of gas ports 33 and 38. The control device 100 repeats the supply of purge gas for a predetermined time to the pair of gas ports 33 and 38 a predetermined number of times, for example, three times.

[0101] The control device 100 repeats the supply of purge gas for a predetermined time a predetermined number of times, for example, three times, in the order of gas ports 34 and 37, gas ports 35 and 36, and gas ports 39 and 40, from the gas port 30 side toward the exhaust port 42 side. That is, the control device 100 repeats the valve opening and closing control a predetermined number of times in the order of valves 94b and 94e, valves 94c and 94d, and valves 94g and 94h. This allows particles that are not detached by a single shock wave of purge gas to be detached. Note that the series of valve opening and closing sequences of Modification 9 may be repeated as in Modification 6.

[0102] [Variation 10] FIG. 26 is a diagram showing an example of a valve opening / closing sequence in Modification 10. Modification 10 shown in FIG. 26 is a case where, among the valve opening / closing sequences of Modification 9, the supply of purge gas to the pair of gas ports 35 and 36 and the pair of gas ports 39 and 40 for a predetermined time is controlled to be repeated a predetermined number of times simultaneously. In other words, Modification 10 is a pattern that combines Modifications 4 and 9, and therefore a detailed description thereof will be omitted. This makes it possible to remove particles that are not removed by a single shock wave of purge gas, and also makes it possible to shorten the cleaning time compared to Modification 9. Note that the series of valve opening / closing sequences of Modification 10 may be repeated in the same manner as Modification 6.

[0103] [Variation 11] FIG. 27 is a diagram showing an example of a valve opening and closing sequence in Modification 11. Modification 11 is a case in which the valve opening and closing sequence of the second embodiment is repeated in the same manner as Modification 6. As with Modification 6, Modification 11 does not limit the number of times a series of valve opening and closing sequences is repeated. If a particle monitor device is provided, even if the amount of particles does not fall below the reference value in one valve opening and closing sequence, the series of valve opening and closing sequences is repeated and terminated when the amount of particles falls below the reference value. If a particle monitor device is not provided, the series of valve opening and closing sequences may be repeated a predetermined number of times and then terminated.

[0104] [Variation 12] FIG. 28 is a diagram showing an example of a valve opening and closing sequence in Modification 12. Modification 12 is a case in which the valve opening and closing sequence of Modification 4 is repeated in the same manner as Modification 11. As with Modification 11, Modification 12 does not limit the number of times the series of valve opening and closing sequences is repeated. If a particle monitor device is provided, even if the amount of particles does not fall below the reference value in one valve opening and closing sequence, the series of valve opening and closing sequences is repeated and terminated when the amount of particles falls below the reference value. If a particle monitor device is not provided, the series of valve opening and closing sequences may be repeated a predetermined number of times and then terminated. This allows the cleaning time to be shorter than in Modification 11.

[0105] In the second embodiment and modifications 4 to 12, the valve opening / closing sequences are individually controlled for the gas port 30 and the set of gas ports 33 and 38. However, the present invention is not limited to this. For example, the gas port 30 and the set of gas ports 33 and 38 may be controlled to simultaneously supply purge gas for a predetermined time.

[0106] [Variation 13] In the second embodiment and modified examples 4 to 12 described above, the purge gas is supplied to the gas port 30 via the pipe 56 and the valve 57, but it may be supplied via the pipe 59 and the valve 62, and this embodiment will be described as modified example 13. Note that the substrate processing apparatus in modified example 13 is similar to the substrate processing apparatus 1 of the second embodiment described above, and therefore, a description of the overlapping configuration and operation will be omitted.

[0107] Fig. 29 is a diagram showing an example of a piping system to a vacuum transfer chamber in Modification 13. As shown in Fig. 29, in Modification 13, unlike the second embodiment, piping 56 and valve 57 are not provided, and piping 58 is connected to regulator 55. Purge gas is supplied to gas port 30 via piping 59 and valve 62 through piping 59a.

[0108] Figure 30 is a diagram showing an example of a valve opening / closing sequence in Modification 13. In Figure 30, the supply of purge gas to gas ports 30, 31, 32, 39, and 40 is simultaneously controlled by the corresponding valve 62. In addition, gas ports 33 to 40 and corresponding valves 94a to 94h are operated as a pair, with the opposite positions. Gas port 41 and valve 94i are not used in the valve opening / closing sequence shown in Figure 30. In Figure 30, the open state of a valve is represented as "open" and the closed state as "closed."

[0109] When cleaning the VTM 11, the control device 100 first controls the valve 62 to supply purge gas for a predetermined time from the gas ports 30-32 located farthest from the exhaust port 42 of the VTM 11 and the gas ports 39 and 40 on the LLM 15 side. In this case, the gas ports 30-32 correspond to the first gas ports. The predetermined time can be, for example, 1 to 5 seconds. Note that the control device 100 may also clean the VTM 11 if a particle monitor (not shown) installed immediately after the valve 81 detects a particle count equal to or greater than a threshold.

[0110] Next, the control device 100 controls the valves 94a and 94f to supply purge gas for a predetermined time from the pair of gas ports 33 and 38, which are second gas ports located closer to the LLM 15 than the gas port 30.

[0111] The control device 100 similarly supplies purge gas for a predetermined time from the gas port 30 toward the exhaust port 42, sequentially through the pair of gas ports 34 and 37, the pair of gas ports 35 and 36, and the pair of gas ports 39 and 40. In other words, the control device 100 controls the opening and closing of the valves in the following order: the pair of valves 94b and 94e, the pair of valves 94c and 94d, and the pair of valves 94g and 94h. This generates a viscous flow of purge gas within the VTM 11 from the gas port 30 toward the exhaust port 42, allowing shock waves (physical vibrations) of the purge gas to be distributed throughout the entire VTM 11, even if the VTM 11 is large. Furthermore, by efficiently moving particles within the VTM 11 toward the exhaust port 42, the cleaning time of the VTM 11 can be shortened.

[0112] [Experimental Results] Next, an experimental example of Modification 13 using a simulation will be described with reference to Figures 31 to 35. Figures 31 to 35 are diagrams showing an example of experimental results of Modification 13. Note that in Figures 31 to 35, there are parts where the airflow extends outside the VTM 11, but this is just an expression in the simulation, and in reality the airflow does not extend outside the VTM 11.

[0113] 31 shows the pressure distribution and flow of purge gas when purge gas is supplied for a predetermined time from gas ports 30 to 32, 39, and 40. In this case, it can be seen that the flow of purge gas inside VTM 11 is uniform, and there is also a flow of purge gas near the surface where PM 13 is connected.

[0114] 32 shows the pressure distribution and flow of purge gas when purge gas is supplied for a predetermined time from the pair of gas ports 33 and 38. In this case, it can be seen that shock waves reach the wall surface of the VTM 11 near the gas ports 33 and 38, and the flow of purge gas toward the exhaust port 42 becomes stronger.

[0115] 33 shows the pressure distribution and flow of purge gas when purge gas is supplied for a predetermined time from the pair of gas ports 34, 37. In this case, it can be seen that a shock wave reaches the wall surface of the VTM 11 near the gas ports 34, 37, and the purge gas does not flow toward the gas port 30, but instead flows toward the exhaust port 42.

[0116] 34 shows the pressure distribution and flow of purge gas when purge gas is supplied for a predetermined time from the pair of gas ports 35, 36. In this case, it can be seen that a shock wave reaches the wall surface of the VTM 11 near the gas ports 35, 36, and the purge gas does not flow toward the gas port 30, but instead flows toward the exhaust port 42.

[0117] Figure 35 shows the pressure distribution and flow of purge gas when purge gas is supplied for a predetermined time from a pair of gas ports 39, 40. In this case, a shock wave reaches the wall surface of the VTM 11 near the gas ports 39, 40, and the purge gas spreads near the exhaust port 42, but does not flow much toward the gas port 30, and instead flows toward the exhaust port 42. In this way, by supplying purge gas in order from Figure 31 to Figure 35, the viscous flow of the purge gas from the gas port 30 toward the exhaust port 42 efficiently moves particles inside the VTM 11 toward the exhaust port 42 and is discharged.

[0118] [Variations of valve opening and closing sequences] In the above-described embodiment, the purge gas supply sequences for the gas ports 30-32, 39-40, the gas ports 33-38, the gas ports 34-37, the gas ports 35-36, and the gas ports 39-40 are non-overlapping. However, partial overlap or simultaneous supply between two groups is also possible. These embodiments will be described as Modifications 14-22. In Modifications 14-22, the gas ports 30-32, 39-40 and the corresponding valves 62 are operated as a set. Similarly to Modification 13, the gas ports 33-40 and the corresponding valves 94a-94h are operated as a set, with the valves located opposite each other. Furthermore, the gas port 41 and the valve 94i are not used in the valve opening / closing sequences shown in Modifications 14-22. The substrate processing apparatuses in Modifications 14-22 are similar to the substrate processing apparatus 1 in Modification 13, and therefore, descriptions of the overlapping configurations and operations will be omitted.

[0119] [Variation 14] Fig. 36 is a diagram showing an example of a valve opening / closing sequence in Modification 14. In Modification 14 shown in Fig. 36, when cleaning the VTM 11, the control device 100 first controls the valve 62 so that purge gas is supplied for a predetermined time from the gas ports 30-32 located farthest from the exhaust port 42 of the VTM 11 and the gas ports 39 and 40 closest to the LLM 15.

[0120] The control device 100 then controls the valves 94a and 94f to supply purge gas from the pair of gas ports 33 and 38 for a predetermined time.

[0121] The control device 100 similarly controls the pair of valves 94b and 94e so that purge gas is supplied from the pair of gas ports 34 and 37 from the gas port 30 side toward the exhaust port 42 side for a predetermined period of time.

[0122] Next, the control device 100 synchronizes the valves 94c and 94d and the valves 94g and 94h so that purge gas is simultaneously supplied for a predetermined time to the gas ports 35 and 36 and the gas ports 39 and 40. This makes it possible to suppress the flow of purge gas from the gas ports 39 and 40 toward the gas port 30. Furthermore, the cleaning time can be shortened compared to the thirteenth modification.

[0123] [Variation 15] Fig. 37 is a diagram showing an example of a valve opening / closing sequence in Modification 15. In Modification 15 shown in Fig. 37, when cleaning the VTM 11, the control device 100 first controls the valve 62 so that purge gas is supplied for a predetermined time from the gas ports 30-32 located farthest from the exhaust port 42 of the VTM 11 and the gas ports 39 and 40 closest to the LLM 15.

[0124] The control device 100 then controls the valves 94a and 94f to supply purge gas for a predetermined time from the set of gas ports 33 and 38 before the predetermined time has elapsed for the sets of gas ports 30-32, 39, and 40. In other words, while purge gas is being supplied from the set of gas ports 30-32, 39, and 40, the supply of purge gas from the set of gas ports 33 and 38 begins.

[0125] The control device 100 then controls the pair of valves 94b and 94e to supply purge gas for a predetermined time from the pair of gas ports 34 and 37 before the predetermined time has elapsed for the pair of gas ports 33 and 38. In other words, while purge gas is being supplied from the pair of gas ports 33 and 38, supply of purge gas from the pair of gas ports 34 and 37 begins.

[0126] The control device 100 then controls the pair of valves 94c and 94d to supply purge gas for a predetermined time from the pair of gas ports 35 and 36 before the predetermined time has elapsed for the pair of gas ports 34 and 37. In other words, while purge gas is being supplied from the pair of gas ports 34 and 37, the supply of purge gas from the pair of gas ports 35 and 36 begins.

[0127] The control device 100 then controls the pair of valves 94g and 94h to supply purge gas from the pair of gas ports 39 and 40 for a predetermined time before the predetermined time has elapsed for the pair of gas ports 35 and 36. In other words, while purge gas is being supplied from the pair of gas ports 35 and 36, the supply of purge gas from the pair of gas ports 39 and 40 begins. This allows the viscous flow to continue from the gas port 30 side toward the exhaust port 42 side, making it easier for particles to flow toward the exhaust port 42 and reducing the number of particles returning to the gas port 30 side. Furthermore, because the times at which purge gas is supplied overlap, the cleaning time can be further shortened.

[0128] [Variation 16] Figure 38 is a diagram showing an example of a valve opening and closing sequence in Modification 16. Modification 16 shown in Figure 38 is a case where the valve opening and closing sequence of Modification 15 is repeated. When cleaning the VTM 11, the control device 100 first controls the valve 62 so that purge gas is supplied for a predetermined time from the gas ports 30-32 located farthest from the exhaust port 42 of the VTM 11 and the gas ports 39, 40 closest to the LLM 15.

[0129] The control device 100 controls the valves 94a and 94f to supply purge gas from the pair of gas ports 33 and 38 for a predetermined time before the predetermined time has elapsed for the pairs of gas ports 30-32, 39, and 40. In other words, while purge gas is being supplied from gas port 30, the control device 100 starts supplying purge gas from the pair of gas ports 33 and 38. Thereafter, as in the fifteenth modification, the control device 100 supplies purge gas from the pair of gas ports 33 and 38, the pair of gas ports 34 and 37, the pair of gas ports 35 and 36, and the pair of gas ports 39 and 40, with each supplying a predetermined time overlapping with the other.

[0130] After the predetermined time of supplying purge gas from the gas port set 39, 40 is completed, the control device 100 again supplies purge gas to the gas ports 30-32, 39, 40, the gas port set 33, 38, the gas port set 34, 37, the gas port set 35, 36, and the gas port set 39, 40, in this order, with each supply overlapping for a predetermined time. The number of times the valve opening and closing sequence from the gas port set 30-32, 39, 40 to the gas port set 39, 40 is repeated is not limited. If a particle monitor device is provided, the valve opening and closing sequence is repeated even if the particle amount does not fall below the reference value in one valve opening and closing sequence, and is terminated when the particle amount falls below the reference value. If a particle monitor device is not provided, the valve opening and closing sequence may be repeated a predetermined number of times and then terminated.

[0131] [Variation 17] FIG. 39 is a diagram showing an example of a valve opening / closing sequence in Modification 17. Modification 17 shown in FIG. 39 is a case where, among the valve opening / closing sequences of Modification 15, purge gas is controlled to be supplied simultaneously for a predetermined time to the pair of gas ports 35, 36 and the pair of gas ports 39, 40. In other words, Modification 17 is a pattern that combines Modifications 14 and 15, and therefore a detailed description thereof will be omitted. Modification 17 can suppress the flow of purge gas from the pair of gas ports 39, 40 toward gas port 30. Furthermore, Modification 17 can further shorten the cleaning time.

[0132] [Variation 18] FIG. 40 is a diagram showing an example of a valve opening and closing sequence in Modification 18. Modification 18 is a case in which the valve opening and closing sequence of Modification 17 is repeated in the same manner as Modification 16. As with Modification 16, Modification 18 does not limit the number of times a series of valve opening and closing sequences is repeated. If a particle monitor device is provided, even if the amount of particles does not fall below the reference value in one valve opening and closing sequence, the series of valve opening and closing sequences is repeated and terminated when the amount of particles falls below the reference value. If a particle monitor device is not provided, the series of valve opening and closing sequences may be repeated a predetermined number of times and then terminated.

[0133] [Variation 19] Figure 41 is a diagram showing an example of a valve opening and closing sequence in Modification 19. In Modification 19 shown in Figure 41, when cleaning the VTM 11, the control device 100 first controls the valve 62 to supply purge gas for a predetermined time from the gas ports 30-32 located farthest from the exhaust port 42 of the VTM 11 and the gas ports 39, 40 closest to the LLM 15. The control device 100 repeats the supply of purge gas for a predetermined time from the set of gas ports 30-32, 39, 40 a predetermined number of times, for example, three times.

[0134] The control device 100 then controls the valves 94a and 94f to supply purge gas for a predetermined time from the pair of gas ports 33 and 38. The control device 100 repeats the supply of purge gas for a predetermined time to the pair of gas ports 33 and 38 a predetermined number of times, for example, three times.

[0135] Similarly, the control device 100 repeats the supply of purge gas for a predetermined time period a predetermined number of times, for example, three times, in the order of gas ports 34 and 37, gas ports 35 and 36, and gas ports 39 and 40, from the gas port 30 side toward the exhaust port 42 side. That is, the control device 100 repeats the valve opening and closing control a predetermined number of times in the order of valves 94b and 94e, valves 94c and 94d, and valves 94g and 94h. This allows particles that are not detached by a single shock wave of purge gas to be detached. The series of valve opening and closing sequences of Modification 19 may be repeated as in Modification 16.

[0136] [Variation 20] FIG. 42 is a diagram showing an example of a valve opening / closing sequence in Modification 20. Modification 20 shown in FIG. 42 is a case where, among the valve opening / closing sequences of Modification 19, the supply of purge gas to the pair of gas ports 35 and 36 and the pair of gas ports 39 and 40 for a predetermined time is controlled to be repeated a predetermined number of times simultaneously. In other words, Modification 20 is a pattern that combines Modifications 14 and 19, and therefore a detailed description thereof will be omitted. This makes it possible to remove particles that are not removed by a single shock wave of purge gas, and also makes it possible to shorten the cleaning time compared to Modification 19. Note that the series of valve opening / closing sequences of Modification 20 may be repeated in the same manner as Modification 16.

[0137] [Variation 21] FIG. 43 is a diagram showing an example of a valve opening and closing sequence in Modification 21. Modification 21 is a case in which the valve opening and closing sequence of Modification 13 is repeated in the same manner as Modification 16. As with Modification 16, Modification 21 does not limit the number of times a series of valve opening and closing sequences is repeated. If a particle monitor device is provided, even if the amount of particles does not fall below the reference value in one valve opening and closing sequence, the series of valve opening and closing sequences is repeated and terminated when the amount of particles falls below the reference value. If a particle monitor device is not provided, the series of valve opening and closing sequences may be repeated a predetermined number of times and then terminated.

[0138] [Variation 22] FIG. 44 shows an example of a valve opening and closing sequence in Modification 22. Modification 22 is a case in which the valve opening and closing sequence of Modification 14 is repeated in the same manner as Modification 21. As with Modification 21, Modification 22 does not limit the number of times the series of valve opening and closing sequences is repeated. If a particle monitor device is provided, even if the amount of particles does not fall below the reference value in one valve opening and closing sequence, the series of valve opening and closing sequences is repeated and terminated when the amount of particles falls below the reference value. If a particle monitor device is not provided, the series of valve opening and closing sequences may be repeated a predetermined number of times and then terminated. This allows the cleaning time to be shorter than in Modification 21.

[0139] In the second embodiment and Modifications 4 to 22, particles are cleaned using the viscous flow and shock waves of the purge gas. However, this is not limiting. For example, a high voltage may be applied to an electrode provided inside the robot arm 12, and the fork of the robot arm 12 may be brought close to the inner surface of the VTM 11 to generate an electrostatic field between the inner surface of the VTM 11 and the fork, thereby applying electrostatic stress, such as Maxwell stress, to the inner surface of the VTM 11. The applied high voltage may be, for example, high voltages of different polarities, such as +1 kV and −1 kV, applied alternately. The absolute value of the applied high voltage may be, for example, in the range of 1 kV to 5 kV. Instead of applying a high voltage of different polarities, the applied high voltage may be repeatedly turned on and off. This weakens the adhesive force of particles deposited on the inner surface of the VTM 11, causing the particles to detach. That is, the control device 100 can remove particles deposited at a desired position on the inner surface of the VTM 11 by moving the fork of the robot arm 12 to the desired position. For example, when a series of valve opening and closing sequences is repeated as in Modifications 6, 11, 12, 16, 21, and 22, in the first sequence, the fork is moved sequentially closer to the inner surface of the VTM 11 near the gas ports 33, 34, and 35 in accordance with the supply of purge gas. In addition, in the second sequence, the fork is moved sequentially closer to the inner surface of the VTM 11 near the gas ports 38, 37, and 36 in accordance with the supply of purge gas. This improves the cleaning effect.

[0140] In addition, in the above-described modified examples 13 to 22, the valve opening / closing sequences are individually controlled for the set of gas ports 30 to 32, 39, and 40 and the set of gas ports 33 and 38. However, the present invention is not limited to this. For example, the set of gas ports 30 to 32, 39, and 40 and the set of gas ports 33 and 38 may be controlled so as to simultaneously supply purge gas for a predetermined time.

[0141] As described above, according to the first embodiment, the substrate processing apparatus 1 includes a vacuum transfer chamber 11 having a top surface, a bottom surface opposite the top surface, and side surfaces between the top surface and the bottom surface, the side surfaces being a first side surface and a second side surface opposite the first side surface, a transfer robot (robot arm 12) disposed within the vacuum transfer chamber for transferring a substrate (wafer), a load lock module 15 connected to the first side surface, pipes (56, 58) connected to a purge gas supply source 54 for supplying purge gas into the vacuum transfer chamber 11, at least one gas port (30) provided on the top surface near the second side surface and connected to the pipe, and at least one exhaust port 42 provided on the bottom surface of the vacuum transfer chamber 11 near the first side surface and connected to an exhaust pump for exhausting the purge gas supplied to the vacuum transfer chamber. As a result, gas stagnation can be eliminated, thereby suppressing particle accumulation.

[0142] Furthermore, according to the first embodiment, the vicinity of the second side surface refers to the portion of the upper surface that is closest to the second side surface when the upper surface is divided into eight equal parts from the first side surface to the second side surface in that direction. As a result, gas stagnation can be eliminated, thereby suppressing the accumulation of particles.

[0143] Furthermore, according to the first embodiment, a plurality of gas ports are provided, which prevents gas from stagnating and suppresses particle accumulation.

[0144] Furthermore, according to the first embodiment, the gas ports (30 to 32, 39, 40) are further provided on the upper surface near the first side surface, thereby preventing gas from stagnating and suppressing particle accumulation.

[0145] Furthermore, according to the first embodiment, gas ports are further provided at the connection portion of the first gate valve (16) provided between the load lock module 15 and the vacuum transfer chamber 11, and at the connection portion 14a of the second gate valve (14) provided between the vacuum transfer chamber 11 and the process module 13. As a result, accumulation of particles can be suppressed by eliminating the retention of purge gas containing residual gas components.

[0146] According to the first embodiment, the piping includes a first piping (59) that supplies purge gas to each of the gas ports provided on the upper surface (39, 40) near the first side surface and the upper surface (30-32) near the second side surface via a first mass flow controller (MFC60) that controls the flow rate of the purge gas, a second piping (63) that supplies purge gas to each of the gas ports (39-41) provided at the connection portion of the first gate valve via a second mass flow controller (MFC64) that controls the flow rate of the purge gas, and a third piping (58) that supplies purge gas to each of the gas ports (33-38) provided at the connection portion 14a of the second gate valve via a third mass flow controller (MFC68) that controls the flow rate of the purge gas. As a result, the flow of purge gas within the vacuum transfer chamber 11 becomes uniform, and stagnation of purge gas containing components of residual gas is eliminated, thereby suppressing the accumulation of particles.

[0147] Furthermore, according to the first embodiment, the first mass flow controller controls the flow rate to continuously supply purge gas when the vacuum transfer chamber 11 is idle or transferring a substrate, when the first gate valve is open, and when the second gate valve is open. As a result, the flow of purge gas within the vacuum transfer chamber 11 can be made uniform.

[0148] Furthermore, according to the first embodiment, the second mass flow controller controls the flow rate to stop the purge gas when the vacuum transfer chamber 11 is idle or transferring a substrate and when the second gate valve is opened, and controls the flow rate to stop the purge gas or supply it by ramp control when the first gate valve is opened, thereby reducing the influence of the atmosphere on the load lock module 15 side.

[0149] Furthermore, according to the first embodiment, the third mass flow controller controls the flow rate to stop the purge gas when the vacuum transfer chamber 11 is idle or transferring a substrate and when the first gate valve is opened, and controls the flow rate to supply the purge gas by ramp control when the second gate valve is opened. As a result, it is possible to suppress turbulence in the airflow within the vacuum transfer chamber 11 and reduce the influence of the atmosphere on the process module 13 side.

[0150] According to the first modification, the piping includes a first piping (59) that supplies purge gas to gas ports provided on the upper surface (39, 40) near the first side surface and the upper surface (30-32) near the second side surface via a first mass flow controller (MFC60) that controls the flow rate of the purge gas, and a fourth piping (90) that supplies purge gas to gas ports (33-41) provided at the connection portion of the first gate valve and the connection portion 14a of the second gate valve via a fourth mass flow controller (MFC91) that controls the flow rate of the purge gas. As a result, the flow of purge gas within the vacuum transfer chamber 11 becomes uniform, eliminating the accumulation of purge gas containing residual gas components, thereby suppressing the accumulation of particles. Furthermore, the piping system can be reduced compared to the above embodiment.

[0151] According to the first modification, the first mass flow controller controls the flow rate to continuously supply purge gas when the vacuum transfer chamber 11 is idle or transferring a substrate, when the first gate valve is open, and when the second gate valve is open. As a result, the flow of purge gas within the vacuum transfer chamber 11 can be made uniform.

[0152] Furthermore, according to Modification 1, the fourth mass flow controller controls the flow rate to stop the purge gas when the vacuum transfer chamber 11 is idle or transferring a substrate, and controls the flow rate to supply the purge gas by ramp control when the first gate valve and the second gate valve are opened. As a result, it is possible to suppress turbulence in the airflow within the vacuum transfer chamber 11 and reduce the influence of the atmosphere on the process module 13 and load lock module 15 sides.

[0153] According to the second modification, the piping includes a fifth piping (59) that supplies purge gas to the gas ports provided on the upper surface (39, 40) near the first side surface and the upper surface (30-32) near the second side surface via a first orifice (95) and a first valve (62) that control the flow rate of the purge gas, and a fourth piping (90) that supplies purge gas to the gas ports (33-41) provided at the connection portion of the first gate valve and the connection portion 14a of the second gate valve via a fourth mass flow controller (MFC91) that controls the flow rate of the purge gas. As a result, the flow of purge gas within the vacuum transfer chamber 11 becomes uniform, eliminating the accumulation of purge gas containing residual gas components, thereby suppressing particle accumulation. Furthermore, the piping system can be reduced compared to the above embodiment. Furthermore, costs can be reduced compared to the first modification.

[0154] According to Modification 2, the first orifice and the first valve supply purge gas when the vacuum transfer chamber 11 is idle or transferring a substrate, when the first gate valve is open, and when the second gate valve is open. As a result, the flow of purge gas within the vacuum transfer chamber 11 can be made uniform.

[0155] According to the second modification, the fourth mass flow controller controls the flow rate to stop the purge gas when the vacuum transfer chamber 11 is idle or transferring a substrate, and controls the flow rate to supply the purge gas by ramp control when the first gate valve and the second gate valve are opened. As a result, it is possible to suppress turbulence in the airflow within the vacuum transfer chamber 11 and reduce the influence of the atmosphere on the process module 13 and load lock module 15 sides.

[0156] According to the third modification, the piping includes a first piping (59) that supplies purge gas to each of the gas ports provided on the upper surface (39, 40) near the first side surface and the upper surface (30-32) near the second side surface via a first mass flow controller (MFC60) that controls the flow rate of the purge gas, and a sixth piping (96) that supplies purge gas to each of the gas ports provided on the connection portion of the first gate valve and the connection portion of the second gate valve via second orifices (97a-97i) and second valves (94a-94i) that control the flow rate of the purge gas provided to each of the gas ports (33-41) provided on the connection portion of the first gate valve and the connection portion of the second gate valve. As a result, the flow of purge gas within the vacuum transfer chamber 11 becomes uniform, and accumulation of purge gas containing components of residual gas is eliminated, thereby suppressing particle accumulation. Furthermore, the piping system can be reduced compared to the above embodiment, and the cost can be reduced compared to the first modification.

[0157] According to Modification 3, the first mass flow controller controls the flow rate to continuously supply purge gas when the vacuum transfer chamber 11 is idle or transferring a substrate, when the first gate valve is open, and when the second gate valve is open. As a result, the flow of purge gas within the vacuum transfer chamber 11 can be made uniform.

[0158] According to Modification 3, the second orifices and the second valve control the flow rate to stop the purge gas when the vacuum transfer chamber 11 is idle or transferring a substrate, and continuously supply the purge gas when the first gate valve and the second gate valve are opened. As a result, it is possible to suppress turbulence in the airflow within the vacuum transfer chamber 11 and reduce the influence of the atmosphere on the process module 13 and load lock module 15 sides.

[0159] According to the second embodiment, the vacuum transfer chamber has a top surface, a bottom surface opposite the top surface, and side surfaces between the top surface and the bottom surface, and the side surfaces include a first side surface and a second side surface opposite the first side surface. The control device 100 executes the following steps: a) supplying purge gas for a predetermined time from a first gas port (30) located on the top surface near the second side surface and farthest from the exhaust port 42 while exhausting the vacuum transfer chamber 11 through an exhaust port 42 provided on the bottom surface near the first side surface; and b) supplying purge gas for a predetermined time from second gas ports (33-40) located closer to the first side surface than the first gas port while exhausting the vacuum transfer chamber 11 through the exhaust port 42. As a result, shock waves of the purge gas can be distributed throughout the vacuum transfer chamber 11, and the cleaning time of the vacuum transfer chamber 11 can be shortened.

[0160] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and various omissions, substitutions, and modifications may be made in the above embodiments without departing from the spirit and scope of the appended claims.

[0161] In addition, in the above-described embodiments, N2 gas is used as the purge gas, but this is not limiting. For example, rare gases such as He, Ne, and Ar gas may be used as the inert gas.

[0162] The following additional notes are provided regarding the above-described embodiments.

[0163] (Appendix 1) A method for cleaning a vacuum transfer chamber, comprising: The vacuum transfer chamber includes: a top surface, a bottom surface facing the top surface, and a side surface between the top surface and the bottom surface, the side surface including a first side surface and a second side surface facing the first side surface; a) supplying a purge gas for a predetermined time from a first gas port located on the top surface near the second side surface and farthest from the exhaust port while exhausting the inside of the vacuum transfer chamber from an exhaust port located on the bottom surface near the first side surface; b) supplying the purge gas for the predetermined time from a second gas port located closer to the first side surface than the first gas port while evacuating the inside of the vacuum transfer chamber from the exhaust port; A method for cleaning a vacuum transfer chamber having the above structure.

[0164] (Appendix 2) c) a step of repeating the steps a) and b); 2. A method for cleaning a vacuum transfer chamber according to claim 1, comprising:

[0165] (Supplementary Note 3) d) repeating step a) a predetermined number of times, and then repeating step b) a predetermined number of times; 2. A method for cleaning a vacuum transfer chamber according to claim 1, comprising:

[0166] (Note 4) In the step b), the supply of the purge gas is started before the predetermined time in the step a) has elapsed. 3. A method for cleaning a vacuum transfer chamber according to claim 1 or 2.

[0167] (Note 5) In the above a) and b), the exhaust from the exhaust port or the flow rate of the purge gas is controlled so that the pressure inside the vacuum transfer chamber is 133 Pa or more. 5. A method for cleaning a vacuum transfer chamber according to any one of appendices 1 to 4.

[0168] (Note 6) In the step b), when a plurality of second gas ports are provided facing the exhaust port side, the purge gas is supplied for the predetermined time in order from the second gas port on the second side surface side. 6. A method for cleaning a vacuum transfer chamber according to any one of appendices 1 to 5.

[0169] (Supplementary Note 7) In the step b), the supply of the purge gas is started from the next second gas port before the predetermined time has elapsed from the second gas port to which the purge gas is currently being supplied. 7. A method for cleaning a vacuum transfer chamber according to claim 6.

[0170] (Supplementary Note 8) In the steps a) and b), a high voltage is applied to an electrode in a vacuum transfer robot provided in the vacuum transfer chamber for the predetermined time. A method for cleaning a vacuum transfer chamber according to any one of appendices 1 to 7.

[0171] (Supplementary Note 9) The absolute value of the high voltage is in the range of 1 to 5 kV. 9. A method for cleaning a vacuum transfer chamber according to claim 8.

[0172] (Supplementary Note 10) e) When a particle detector provided in an exhaust line connected to the exhaust port detects a particle count equal to or greater than a threshold, the steps a) and b) are executed. 10. A method for cleaning a vacuum transfer chamber according to any one of appendices 1 to 9.

[0173] (Supplementary Note 11) A substrate processing apparatus, a vacuum transfer chamber having a top surface, a bottom surface opposite to the top surface, and a side surface between the top surface and the bottom surface, the side surface having a first side surface and a second side surface opposite to the first side surface; a control unit; the control unit is configured to: a) control the substrate processing apparatus to exhaust the inside of the vacuum transfer chamber from an exhaust port provided in the bottom surface near the first side surface, while supplying a purge gas for a predetermined time from a first gas port provided in the top surface near the second side surface and located farthest from the exhaust port; the control unit is configured to: b) control the substrate processing apparatus so as to supply the purge gas from a second gas port located closer to the first side surface than the first gas port for the predetermined time while exhausting the inside of the vacuum transfer chamber from the exhaust port. Substrate processing equipment. [Explanation of symbols]

[0174] 1. Substrate processing equipment 10. Device body 11 Vacuum Transfer Chamber (VTM) 12 Robotic Arm 13 Process Module (PM) 14,16 Gate valve 14a Connection 15 Load Lock Module (LLM) 30~41 Gas Port 42 exhaust port 54 Purge gas supply source 56, 58, 59, 63, 90, 96 Piping 60, 64, 68, 91 Mass Flow Controller (MFC) 57, 62, 94a~94i valves 95,97a~97i Orifice 100 control device

Claims

1. A substrate processing apparatus, a vacuum transfer chamber having a top surface, a bottom surface opposite the top surface, and side surfaces between the top surface and the bottom surface, the side surfaces including a first side surface, a second side surface opposite the first side surface, and a pair of side surfaces disposed between the first side surface and the second side surface and opposing each other, wherein the top surface, the bottom surface, the first side surface, the second side surface, and the pair of side surfaces define a single space; a transfer robot disposed in the vacuum transfer chamber and configured to transfer a substrate; a load lock module disposed along the first side; a first gate valve connecting the vacuum transfer chamber and the load lock module; a plurality of second gate valves connecting a plurality of process modules arranged side by side along each of the pair of side surfaces to the vacuum transfer chamber; a plurality of gas ports for supplying a purge gas into the vacuum transfer chamber; a pipe connecting the plurality of gas ports to a purge gas supply source; at least one exhaust port provided on the bottom surface of the vacuum transfer chamber near the first side surface, the exhaust port being connected to an exhaust pump that exhausts the purge gas supplied to the vacuum transfer chamber; Equipped with the plurality of gas ports include a gas port provided on the top surface near the second side surface or on the second side surface near the top surface, and gas ports provided at connection portions between the vacuum transfer chamber and the plurality of second gate valves, respectively. Substrate processing equipment.

2. The vicinity of the second side surface is the portion of the upper surface that is closest to the second side surface when the upper surface is divided into eight equal parts in the direction from the first side surface to the second side surface. The substrate processing apparatus according to claim 1 .

3. the plurality of gas ports includes a gas port provided on the top surface near a center of the second side surface; The at least one exhaust port is provided in the bottom surface near a center of the first side surface. The substrate processing apparatus according to claim 1 or 2.

4. The plurality of gas ports are further provided on the top surface near the first side surface.

4. The substrate processing apparatus according to claim 1.

5. The plurality of gas ports are further provided at a connection portion of the first gate valve.

5. The substrate processing apparatus according to claim 1.

6. The plurality of gas ports are further provided on the upper surface near the first side surface and on a connection portion of the first gate valve, The piping is a first pipe that supplies the purge gas to each of the plurality of gas ports provided on the top surface near the first side surface and on the top surface near the second side surface or on the second side surface near the top surface via a first mass flow controller that controls a flow rate of the purge gas; a second pipe that supplies the purge gas to each of the plurality of gas ports provided at the connection portion of the first gate valve via a second mass flow controller that controls a flow rate of the purge gas; a third pipe that supplies the purge gas to each of the plurality of gas ports provided at the connection portions of the plurality of second gate valves via a third mass flow controller that controls a flow rate of the purge gas; 4. The substrate processing apparatus according to claim 1.

7. the first mass flow controller controls the flow rate so as to continuously supply the purge gas when the vacuum transfer chamber is idle or transferring a substrate, when the first gate valve is opened, and when the second gate valve is opened. The substrate processing apparatus according to claim 6 .

8. The second mass flow controller comprises: controlling the flow rate to stop the purge gas when the vacuum transfer chamber is in the idle state or during the transfer of the substrate and when the second gate valve is opened; When the first gate valve is opened, the flow rate is controlled so that the purge gas is stopped or supplied at a ramp rate. The substrate processing apparatus according to claim 7 .

9. The third mass flow controller comprises: controlling the flow rate to stop the purge gas when the vacuum transfer chamber is in the idle state or during the transfer of the substrate and when the first gate valve is opened; When the second gate valve is opened, the flow rate is controlled so that the purge gas is supplied by ramp control. The substrate processing apparatus according to claim 8 .

10. The plurality of gas ports are further provided on the upper surface near the first side surface and on a connection portion of the first gate valve; The piping is a first pipe that supplies the purge gas to each of the plurality of gas ports provided on the top surface near the first side surface and on the top surface near the second side surface or on the second side surface near the top surface via a first mass flow controller that controls a flow rate of the purge gas; a fourth pipe that supplies the purge gas to each of the gas ports provided at the connection portion of the first gate valve and the connection portions of the plurality of second gate valves via a fourth mass flow controller that controls a flow rate of the purge gas; 4. The substrate processing apparatus according to claim 1.

11. The first mass flow controller comprises: the flow rate is controlled so that the purge gas is continuously supplied when the vacuum transfer chamber is idle or transferring a substrate, when the first gate valve is opened, and when the second gate valve is opened. The substrate processing apparatus according to claim 10 .

12. The fourth mass flow controller is controlling the flow rate to stop the purge gas when the vacuum transfer chamber is in the idle state or during the transfer of the substrate; controlling the flow rate so that the purge gas is supplied by ramp control when the first gate valve is opened and when the second gate valve is opened; The substrate processing apparatus according to claim 11 .

13. The plurality of gas ports are further provided on the upper surface near the first side surface and on a connection portion of the first gate valve, The piping is a fifth pipe that supplies the purge gas to each of the plurality of gas ports provided on the top surface near the first side surface and on the top surface near the second side surface or on the second side surface near the top surface via a first orifice and a first valve that control a flow rate of the purge gas; a fourth pipe that supplies the purge gas to each of the plurality of gas ports provided at the connection portion of the first gate valve and the connection portion of the second gate valve via a fourth mass flow controller that controls a flow rate of the purge gas; 4. The substrate processing apparatus according to claim 1.

14. The first orifice and the first valve include: supplying the purge gas when the vacuum transfer chamber is in an idle state or is transferring a substrate, when the first gate valve is opened, and when the second gate valve is opened; The substrate processing apparatus according to claim 13 .

15. The fourth mass flow controller is controlling the flow rate to stop the purge gas when the vacuum transfer chamber is in the idle state or during the transfer of the substrate; controlling the flow rate so that the purge gas is supplied by ramp control when the first gate valve is opened and when the second gate valve is opened; The substrate processing apparatus according to claim 14 .

16. The plurality of gas ports are further provided on the upper surface near the first side surface and on a connection portion of the first gate valve; The piping is a first pipe that supplies the purge gas to each of the plurality of gas ports provided on the top surface near the first side surface and on the top surface near the second side surface or on the second side surface near the top surface via a first mass flow controller that controls a flow rate of the purge gas; a sixth pipe that supplies the purge gas to each of the gas ports provided at the connection portion of the first gate valve and the connection portion of the second gate valve via a second orifice and a second valve that control a flow rate of the purge gas provided at each of the plurality of gas ports provided at the connection portion of the first gate valve and the connection portion of the second gate valve, 4. The substrate processing apparatus according to claim 1.

17. The first mass flow controller comprises: the flow rate is controlled so that the purge gas is continuously supplied when the vacuum transfer chamber is idle or transferring a substrate, when the first gate valve is opened, and when the second gate valve is opened. The substrate processing apparatus of claim 16 .

18. The plurality of second orifices and the second valve include: controlling the flow rate to stop the purge gas when the vacuum transfer chamber is in the idle state or during the transfer of the substrate; The purge gas is continuously supplied when the first gate valve is opened and when the second gate valve is opened. The substrate processing apparatus of claim 17 .

19. the second side surface is composed of two surfaces so that the vacuum transfer chamber has a pentagonal shape in a plan view. The substrate processing apparatus according to any one of claims 1 to 17.

20. A method for controlling a purge gas in a substrate processing apparatus, comprising: The substrate processing apparatus includes: a vacuum transfer chamber having a top surface, a bottom surface opposite the top surface, and side surfaces between the top surface and the bottom surface, the side surfaces including a first side surface, a second side surface opposite the first side surface, and a pair of side surfaces disposed between the first side surface and the second side surface and opposing each other, wherein the top surface, the bottom surface, the first side surface, the second side surface, and the pair of side surfaces define a single space; a transfer robot disposed in the vacuum transfer chamber and configured to transfer a substrate; a load lock module disposed along the first side; a first gate valve connecting the vacuum transfer chamber and the load lock module; a plurality of second gate valves for connecting a plurality of process modules arranged side by side along each of the pair of side surfaces to the vacuum transfer chamber; a plurality of gas ports for supplying a purge gas into the vacuum transfer chamber; a pipe connecting the plurality of gas ports to a purge gas supply source; at least one exhaust port provided on the bottom surface of the vacuum transfer chamber near the first side surface, the exhaust port being connected to an exhaust pump that exhausts the purge gas supplied to the vacuum transfer chamber; Equipped with the plurality of gas ports include gas ports provided on the top surface near the second side surface or on the second side surface near the top surface, and gas ports provided at connection portions between the vacuum transfer chamber and the plurality of second gate valves, The control method includes: supplying a purge gas into the vacuum transfer chamber from the plurality of gas ports; exhausting the purge gas supplied to the vacuum transfer chamber from the at least one exhaust port; A method for controlling a purge gas, comprising:

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