High-voltage substrate processing equipment

Abstract

To provide a high-voltage substrate processing device that minimizes the possibility of contamination of a substrate by foreign particles generated during a chamber fastening process.SOLUTION: A high-voltage substrate processing device includes an internal chamber 110 formed to accommodate a substrate W to be processed and a processing gas supplied at a first pressure higher than atmospheric pressure, an external housing 121 accommodating the internal chamber, and an external door 125 formed to be movable between a closed state in which the external housing is closed and an open state in which the external housing is opened, and further includes an external chamber 120 formed to accommodate a protective gas supplied at a second pressure set relative to the first pressure, a fastening module 150 formed to fasten the external housing and the external door in the closed state, and a collection module 170 located adjacent to the contact portion for fastening between the external housing and the external door and formed to collect foreign matter.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a high pressure substrate processing apparatus used to process substrates at high pressure. [Background technology]

[0002] Generally, semiconductor wafers undergo various processes during the manufacturing process of semiconductor devices, such as oxidation, nitridation, deposition, and ion implantation. Hydrogen or deuterium heat treatment is also used to improve interface properties of semiconductor devices.

[0003] The gases used in processing are supplied at high pressure into the chamber to act on the semiconductor wafer. To maintain the high pressure inside the chamber, the connection between the chamber housing and the door must be tight.

[0004] During the fastening process between the housing and the door, friction may occur due to their relative movements, which may induce foreign particles, which may contaminate the wafer.

[0005] The above background art is technical information that the inventor possessed for the purpose of deriving the embodiments of the present invention or that he acquired in the process of deriving the embodiments of the present invention, and is not necessarily publicly known technology that was made public to the general public prior to the filing of this application. Summary of the Invention [Problem to be solved by the invention]

[0006] SUMMARY OF THE INVENTION It is an object of the present invention to provide a high-pressure substrate processing apparatus that minimizes the possibility of contamination of a substrate by foreign particles generated during the chamber fastening process. [Means for solving the problem]

[0007] To achieve the above object, a high-pressure substrate processing apparatus according to one aspect of the present invention may include an inner chamber formed to contain a substrate to be processed and a processing gas supplied at a first pressure higher than atmospheric pressure; an outer housing accommodating the inner chamber, and an outer door formed to be movable between a closed state that closes the outer housing and an open state that opens the outer housing, the outer chamber formed to contain a protective gas supplied at a second pressure set relative to the first pressure; a fastening module formed to fasten the outer housing and the outer door in the closed state; and a collection module located adjacent to a contact portion for fastening between the outer housing and the outer door and formed to collect foreign matter.

[0008] Here, the fastening module includes a support protrusion connected to the external housing; and a locking protrusion connected to the external door and supported by the support protrusion by switching from a first relationship in which the support protrusion is offset to a second relationship corresponding to the support protrusion, and the foreign matter includes metal particles generated by contact between the support protrusion and the locking protrusion during switching from the first relationship to the second relationship, and the collection module may include a unit that generates a magnetic force to attract the metal particles.

[0009] Here, the magnetic unit may be installed in either the outer housing or the outer door.

[0010] Here, the fastening module may further include a rotating member having the support protrusion protruding therefrom, and the magnetic unit may be installed in the outer housing via the rotating member.

[0011] Here, the rotating member may include a rotating ring rotatably mounted on the outer housing, and the magnetic force unit may be attached to at least one of the support protrusion and the rotating ring.

[0012] Here, the magnetic force unit may include a magnet; and a coating layer covering the magnet to prevent oxidation of the magnet.

[0013] Here, the coating layer may contain at least one of nickel, magnesium, titanium, tungsten, and chromium as a coating material.

[0014] Here, the magnetic force unit may include a plurality of magnets that form a circular array around the central axis of the exterior door.

[0015] Here, the plurality of magnets may be arranged so as to be classified into a plurality of groups according to the distance from the central axis.

[0016] According to another aspect of the present invention, a high-pressure substrate processing apparatus includes a chamber having a housing and a door configured to open and close the housing; a fastening module configured to fasten the housing and the door to maintain a process gas injected into the chamber at a pressure higher than atmospheric pressure; and a collection module located adjacent to a contact portion for fastening between the housing and the door and configured to collect metal particles, wherein the collection module may include a magnetic unit having a magnet to which the metal particles are attracted.

[0017] Here, the fastening module includes a support protrusion connected to the housing; and a locking protrusion connected to the door and supported by the support protrusion by switching from a first relationship in which the support protrusion is offset from the support protrusion to a second relationship corresponding to the support protrusion, and the metal particles are generated by contact between the support protrusion and the locking protrusion as the support protrusion rotates relative to the locking protrusion to switch from the first relationship to the second relationship.

[0018] Here, the magnet may include a plurality of magnets that form a circular array around the central axis of the door.

[0019] Here, the magnetic force unit may include a coating layer formed by coating the magnet with at least one material selected from the group consisting of nickel, magnesium, titanium, tungsten, and chromium.

[0020] Here, the process gas may include a processing gas including an active gas and a protective gas which is an inert gas, and the housing may include an inner housing formed to accommodate the substrate to be processed and the processing gas; and an outer housing that accommodates at least a portion of the inner housing and is coupled to the inner housing to form, together with the inner housing, a closed space for accommodating the protective gas, and the door may be formed to close the inner housing.

[0021] Here, the fastening module may include a support protrusion connected to the outer housing; and a locking protrusion connected to the door, the locking protrusion being switched from a first relationship in which the support protrusion is offset to a second relationship in which the door is supported on the support protrusion as the door rotates, and the magnetic unit may be configured to capture the metal particles generated by contact between the support protrusion and the locking protrusion during the switching from the first relationship to the second relationship. [Effects of the Invention]

[0022] In the high-pressure substrate processing apparatus according to the present invention, foreign particles generated during a fastening operation of fastening a chamber housing and a door for high-pressure processing of a substrate are collected by the collection module, so that the foreign particles generated during the fastening operation can be removed before they affect the substrate, thereby minimizing the possibility of the substrate being contaminated by the foreign particles. [Brief explanation of the drawings]

[0023] [Figure 1] 1 is a conceptual diagram of a high-pressure substrate processing apparatus 100 according to an embodiment of the present invention. [Figure 2]2 is a perspective view showing an open state in which an outer door 125 opens an outer housing 121 in the high-pressure substrate processing apparatus 100 of FIG. 1. FIG. [Figure 3] 3 is a cross-sectional view showing the relationship between the support protrusion 153 and the locking protrusion 155 when the closed state in which the outer door 125 in FIG. 2 closes the outer housing 121 is realized. FIG. [Figure 4] 3 is a partial perspective view showing a fastening state between an outer housing 121 and an outer door 125 in the high-pressure substrate processing apparatus 100 of FIG. 2. FIG. [Figure 5] FIG. 5 is a perspective view showing magnetic units 171, 173, and 175 of FIG. 4 individually. [Figure 6] FIG. 5 is a perspective view illustrating the arrangement of the collection modules 170 in FIG. 4. DETAILED DESCRIPTION OF THE INVENTION

[0024] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0025] The present invention is not limited to the embodiments disclosed below, but may be modified in various ways and realized in various different forms. However, the present embodiments are provided so that the disclosure of the present invention will be complete and will fully convey the scope of the invention to those skilled in the art. Therefore, the present invention is not limited to the embodiments disclosed below, and should be understood to include all modifications, equivalents, and alternatives within the technical spirit and scope of the present invention, as well as the substitution or addition of the configuration of any one embodiment with the configuration of another embodiment.

[0026] The accompanying drawings are merely for the purpose of facilitating understanding of the embodiments disclosed in this specification, and should not be construed as limiting the technical ideas disclosed in this specification, but should be understood to include all modifications, equivalents, or alternatives included within the idea and technical scope of the present invention. In the drawings, the size and thickness of components may be exaggerated or reduced for ease of understanding, but this should not be interpreted as limiting the scope of protection of the present invention.

[0027] The terms used in this specification are merely used to describe particular implementations or embodiments and are not intended to limit the present invention. Furthermore, singular terms include plural terms unless the context clearly dictates otherwise. In this specification, terms such as "comprises," "consists," and the like are intended to specify the presence of features, numbers, steps, operations, components, parts, or combinations thereof described in the specification. In other words, in this specification, terms such as "comprises," "consists," and the like should be understood not to preclude the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0028] Terms including ordinal numbers such as first, second, etc. may be used to describe various components, but the components are not limited by the terms. The terms are used only to distinguish one component from another.

[0029] When a component is referred to as being "coupled / in communication" or "connected" to another component, it should be understood that the component may be directly coupled / in communication or connected to the other component, but that there may be other components in between. Conversely, when a component is referred to as being "directly coupled / in communication" or "directly connected" to another component, it should be understood that there are no other components in between.

[0030] When a component is referred to as being "on top of" or "under" another component, it should be understood that it may not only be located directly on top of the other component, but that there may also be other components in between.

[0031] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by a person of ordinary skill in the art to which this invention pertains. Terms as defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning they have in the context of the relevant art, and should not be interpreted as having an idealized or overly formal meaning unless expressly defined in this application.

[0032] FIG. 1 is a conceptual diagram of a high-pressure substrate processing apparatus 100 according to an embodiment of the present invention.

[0033] Referring to this drawing, a high pressure substrate processing apparatus 100 may include an inner chamber 110 , an outer chamber 120 , an air supply module 130 , and an exhaust module 140 .

[0034] The inner chamber 110 forms a processing chamber that accommodates a substrate to be processed. The inner chamber 110 may be made of a non-metallic material, such as quartz, to reduce the risk of contamination of the substrate in a high-temperature and high-pressure working environment. The temperature of the inner chamber 110 reaches several hundred to several thousand degrees Celsius by operating a heater (not shown) disposed outside the inner chamber 110. The substrate may be, for example, a semiconductor wafer (see FIG. 2) W mounted on a holder (see FIG. 2) 113. The substrate is not limited to a wafer and may be any other base structure for forming circuits. For example, the substrate may include glass for display manufacturing. The holder 113 may be a boat on which substrates to be processed can be stacked in multiple layers.

[0035] The outer chamber 120 is disposed to house the inner chamber 110. Unlike the inner chamber 110, the outer chamber 120 may be made of a metal material to avoid the risk of inducing contamination to the substrate. The outer chamber 120 may have a hollow protective chamber that houses the inner chamber 110.

[0036] The gas supply module 130 supplies gas to the inner chamber 110 and the outer chamber 120. The gas supply module 130 includes a gas supplier 131 connected to a utility (gas supply facility) in a semiconductor factory. The gas supplier 131 selectively supplies process gases, such as hydrogen gas (H), deuterium gas (D), fluorine gas (F), ammonia gas (NH), chlorine gas (Cl), and nitrogen gas (N), to the inner chamber 110. The gas supplier 131 also supplies protective gases, such as inert gases such as nitrogen gas or argon gas (Ar), to the outer chamber 120. The process gas and protective gas are introduced into the inner chamber 110 and the outer chamber 120 via a process gas line 133 and a protective gas line 135, respectively. The protective gas introduced into the outer chamber 120 is then introduced into the space (protective space) between the outer chamber 120 and the inner chamber 110. The treatment gas and the protective gas may simply be referred to as process gas.

[0037] The process gas is supplied at a pressure (high pressure) higher than atmospheric pressure, for example, several atmospheres to several tens of atmospheres or more. When the pressure of the process gas is a first pressure and the pressure of the protective gas is a second pressure, they can be maintained within a set relationship (range). For example, the second pressure is set to be substantially the same as or slightly higher than the first pressure. Such a pressure relationship provides the advantage of preventing leakage of the reaction gas from the inner chamber 110 and cracking of the inner chamber 110. The second pressure can also be set slightly lower than the first pressure, and in that case, similar effects can be achieved.

[0038] The exhaust module 140 is configured to exhaust the process gas. An exhaust pipe 141 is connected to the upper part of the inner chamber 110 to exhaust the process gas from the inner chamber 110. Similarly, an exhaust pipe 145 connected to the outer chamber 120 may be provided to exhaust the protective gas from the outer chamber 120. Because the exhaust pipes 141 and 145 are connected to each other, the process gas is diluted with the protective gas during the exhaust process, resulting in a lower concentration.

[0039] The fastening structure of the outer chamber 120 will be described with reference to Figures 2 to 4. Figure 2 is a perspective view showing an open state in which the outer door 125 opens the outer housing 121 in the high pressure substrate processing apparatus 100 of Figure 1, Figure 3 is a cross-sectional view showing the relationship between the support protrusions 153 and the locking protrusions 155 when the closed state in which the outer door 125 of Figure 2 closes the outer housing 121 is achieved, and Figure 4 is a partial perspective view showing the fastening state between the outer housing 121 and the outer door 125 in the high pressure substrate processing apparatus 100 of Figure 2.

[0040] Referring to this drawing, the internal chamber 110 includes an internal housing (not shown) and an internal door 115. The internal housing forms the processing chamber for accommodating a substrate W, and the lower portion thereof may have an open shape. The internal housing is attached to an external housing 121 (described later). The internal door 115 closes the open lower portion of the internal housing. The internal door 115 has a trough shape that opens downward. The processing chamber is opened when the internal door 115 descends in an opening / closing direction (E) (open state, see FIG. 2). The opening / closing direction (E) is the direction in which the internal door 115 approaches or moves away from the internal housing. In the open state, the substrate W is loaded into or unloaded from the processing chamber. When the internal door 115 ascends in the opening / closing direction (E), the internal door 115 comes into contact with the internal housing. In this case, the processing chamber is said to be closed (closed state).

[0041] The outer chamber 120 also includes an outer housing 121 and an outer door 125. The outer housing 121 may be formed to entirely accommodate the inner chamber 110. As a result, the outer housing 121 may be formed to enclose not only the inner housing but also the inner door 115. The outer door 125 can also be moved to open and close the outer housing 121. The outer door 125 is connected to the inner door 115 by a support member 127 to support the inner door 115. In this case, the inner door 115 can open and close the inner housing by moving in conjunction with the elevation of the outer door 125. The expressions "open state" and "closed state" can also be applied to the relationship between the outer housing 121 and the outer door 125. Alternatively, the inner door 115 may be configured to open and close independently of the outer door 125.

[0042] The high-pressure substrate processing apparatus 100 may further include a fastening module 150 for fastening the outer housing 121 and the outer door 125 in the closed state. The fastening module 150 maintains the protective gas at the second pressure in the outer chamber 120. If the inner door 115 is supported on the outer door 125 by a support member 127, the fastening module 150 may also fasten the inner door 115 to the inner housing. As a result, the fastening module 150 can maintain the processing gas at the first pressure in the inner chamber 110.

[0043] The fastening module 150 may specifically include a rotating member 151 , a support protrusion 153 , and a locking protrusion 155 .

[0044] The rotating member 151 is configured to be rotatably connected to the outer housing 121 or the outer door 125. In this embodiment, the rotating member 151 may be a rotating ring attached to the outer housing 121. The rotating ring 151 is disposed to surround the outer periphery of the outer housing 121 and rotates around the central axis of the outer housing 121. A force for rotating the rotating ring 151 is provided from a drive wheel (not shown) engaged with the rotating ring 151. The rotating ring 151 may be formed to form a second plane parallel to a first plane formed by the support protrusions 153 or the locking protrusions 155 described below. The first and second planes may be planes approximately perpendicular to the opening / closing direction (E).

[0045] The support protrusions 153 may be protrusions connected to the outer housing 121. Specifically, the support protrusions 153 may be connected to the outer housing 121 by the rotating ring 151. The support protrusions 153 may be formed to protrude from the inner circumferential surface of the rotating ring 151, for example. A plurality of support protrusions 153 may be arranged along the circumferential direction of the rotating ring 151.

[0046] The locking protrusion 155 may be a protrusion connected to the outer door 125. For example, the locking protrusion 155 may be formed to protrude from the outer circumferential surface of the outer door 125. The locking protrusion 155 has a size that allows it to pass between a pair of adjacent support protrusions 153 when the outer door 125 moves up in the opening / closing direction (E). The locking protrusion 155 is located at a higher level than the support protrusions 153 in the closed state (see FIG. 3). As the support protrusions 153 rotate in the rotation direction (R), the locking protrusion 155 is located on and supported by the support protrusions 153 (fastened state, see FIG. 4). In the fastened state, the level of the outer door 125 is substantially the same as in the closed state. The fastened state may also be understood as one of the closed states.

[0047] When the outer door 125 moves up in the opening / closing direction (E) with the locking protrusion 155 positioned offset from the support protrusion 153 (first relationship, see FIG. 3), the closed state is achieved. When the rotating ring 151 rotates in the rotation direction (R) in the closed state, the support protrusion 153 rotates relative to the locking protrusion 155. The top surface of the support protrusion 153 rotates in contact with the bottom surface of the locking protrusion 155. This rotation allows the support protrusion 153 to be positioned corresponding to the locking protrusion 155 (second relationship, see FIG. 4).

[0048] Foreign matter may be generated during the fastening operation of the fastening module 150 (specifically, the rotation of the rotating ring 151 for switching from the first relationship to the second relationship (or vice versa)). The high-pressure substrate processing apparatus 100 may further include a collection module 170 for collecting the foreign matter.

[0049] The foreign matter may be particles generated by contact between the support protrusions 153 and the locking protrusions 155, or particles generated for reasons other than contact and floating around the support protrusions 153 and the locking protrusions 155. The former type of particles is generated by friction between the upper surface of the support protrusions 153 and the lower surface of the locking protrusions 155. The collection module 170 may be an electric force unit that collects the foreign matter by utilizing the force acting between electric charges. The electric force unit may be, for example, an electrostatic filter in which static electricity is generated by applying an ultra-high voltage current to a nonwoven fabric, separating positive and negative charges. Alternatively, the collection module 170 may include a tape having an adhesive component. The electric force unit and the adhesive tape may be installed in approximately the same position as the magnetic force unit described below.

[0050] Since the support protrusions 153 and / or the locking protrusions 155 are made of metal, the particles mainly contain metal components, and therefore the collection module 170 may include a magnetic unit that generates a magnetic force to attract the metal particles.

[0051] The magnetic unit may be installed on the rotating ring 151. Since the rotating ring 151 is attached to the outer housing 121, the magnetic unit is consequently said to be installed on the outer housing 121. This arrangement is different from the magnetic unit being installed on the outer door 125.

[0052] The magnetic units are divided into, for example, a first magnetic unit 171, a second magnetic unit 173, and a third magnetic unit 175. A plurality of each of the magnetic units 171, 173, and 175 may be provided. The first magnetic unit 171 to the third magnetic unit 175 are grouped according to their arrangement position, shape, and the like. Specifically, if the first magnetic unit 171 is attached to the support protrusion 153, the second magnetic unit 173 may be attached between a pair of adjacent support protrusions 153 on the inner circumferential surface of the rotating ring 151. In contrast, the third magnetic unit 175 is attached to the bottom surface of the rotating ring 151. The first magnetic unit 171 and the second magnetic unit 173 may be disposed within a space defined by the inner surface of the outer housing 121. The third magnetic unit 175 may be disposed within a space defined by the outer surface of the outer housing 121. All of the first magnetic unit 171 to the third magnetic unit 175 may be adopted, or only one or two of them may be adopted. Only one of the first magnetic unit 171, the third magnetic unit 173, and the third magnetic unit 175 may also be provided instead of multiple units.

[0053] The first to third magnetic force units 171 to 175 may be positioned adjacent to the contact area between the support protrusion 153 and the locking protrusion 155. For example, the magnetic force units 171, 173, and 175 may be positioned between an upper boundary (UL) corresponding to the top surface of the locking protrusion 155 and a lower boundary (LL) corresponding to the bottom surface of the support protrusion 153 along the opening / closing direction (E) (see FIG. 3). Alternatively, the upper boundary (UL) may be set higher by the thickness of the locking protrusion 155 or several times that thickness, and the lower boundary (LL) may be set lower by the thickness of the support protrusion 153 or several times that thickness. Furthermore, the magnetic force units 171, 173, and 175 may be positioned at a height lower than the contact area. This arrangement is advantageous for the magnetic force units 171, 173, and 175 to capture metal particles descending from the contact area.

[0054] In an alternative embodiment, the magnetic unit may be directly installed on the exterior door 125 or may be installed on the exterior door 125 via the locking protrusions 155. For example, the magnetic unit may be disposed on the side of the locking protrusions 155 or between a pair of adjacent locking protrusions 155. The magnetic unit may also be attached to multiple exterior surfaces of the exterior door 125. Specifically, the magnetic unit may be attached to the side and bottom surfaces of the exterior door 125.

[0055] In the above embodiment, the magnetic unit may be located outside the closed space defined by the outer housing 121 and the outer door 125. The closed space is the space into which the process gas, specifically the protective gas, is injected.

[0056] FIG. 5 is a perspective view showing magnetic units 171, 173, and 175 of FIG. 4 individually.

[0057] Referring to this drawing, the first magnetic unit 171 to the third magnetic unit 175 have shapes and sizes corresponding to the area where they are to be installed. In this embodiment, the first magnetic unit 171 and the second magnetic unit 173 are substantially rectangular, and the third magnetic unit 175 is substantially circular. The magnetic units 171, 173, and 175 are not limited to the illustrated shapes (sizes) and may have different shapes. For example, the third magnetic unit 175 may have a ring shape or a curved shape corresponding to the bottom surface of the rotating ring 151. For the magnetic units 171, 173, and 175, it is advantageous for capturing the metal particles if the peripheral area is as large as possible within the installation target.

[0058] Since the magnetic units 171, 173, and 175 have the same basic structure, the first magnetic unit 171 will be described below. The first magnetic unit 171 has a magnet that generates a magnetic force. The magnet may be a neodymium magnet. The north pole 171a of the magnet occupies the front surface, and the south pole 171b of the magnet occupies the rear surface. Here, the front and rear surfaces may correspond to the periphery of the magnet. A display unit (not shown) indicating the polarity of the magnet may be formed on the front surface. The display unit is a mark for indicating the north pole 171a, and may be, for example, a dot or a letter (e.g., "N") formed on the front surface. The dot or letter may be printed, embossed, or engraved on the front surface.

[0059] The outer surface of the magnet may be covered with a coating layer 171c. The coating layer 171c is intended to prevent oxidation of the magnet. The coating material for forming the coating layer 171c may be selected from the group consisting of nickel, magnesium, titanium, tungsten, and chromium. The coating layer 171c may be an alloy of two of the coating materials. The coating layer 171c may also be a layer of a single material from the coating materials, or a layer of an alloy of the single material.

[0060] FIG. 6 is a perspective view illustrating the arrangement of the collection modules 170 in FIG.

[0061] Referring to this drawing, the plurality of magnetic force units 171, 173, and 175 may be arranged in a circular array around the central axis C of the exterior door 125. The magnetic force units 171, 173, and 175 are spaced apart from the central axis C by different distances. The plurality of first magnetic force units 171 are spaced apart from the central axis C by a first distance (D1), and the plurality of second magnetic force units 173 are spaced apart from the central axis C by a second distance (D2). The plurality of third magnetic force units 175 are spaced apart from the central axis C by a third distance (D3). The first distance (D1) may be the shortest, and the second distance (D2) and third distance (D3) may be similar to each other.

[0062] The magnetic units 171, 173, and 175 may be arranged such that the same magnetic pole is located on the surface facing the central axis C. For example, the first magnetic unit 171 and the second magnetic unit 173 may both have an N pole located on the peripheral surface facing the central axis C. The third magnetic unit 175 may have an N pole located on the surface that appears to the outside.

[0063] This arrangement allows the first magnetic unit 171 to most effectively attract the metal particles. Metal particles generated during contact between the locking protrusions 155 and the support protrusions (see FIG. 4 above) 153 fall toward the nearest first magnetic unit 171 (see F1), allowing the first magnetic unit 171 to capture the metal particles most effectively. Some of the metal particles fall on both sides of the support protrusions 153 (see F2), allowing the second magnetic unit 173 to capture these metal particles. Furthermore, when the exterior door 125 moves to the open position, a laminar flow is formed from the protection chamber to the outside. This laminar flow carries the metal particles not only to the inner circumferential surface of the rotating ring 151 but also to the bottom surface (see F3), allowing the third magnetic unit 175 to capture some of the metal particles.

[0064] In an alternative embodiment, the rotating ring as the rotating member may be rotatably connected to the outer door. If the support protrusion is formed on the outer housing, the locking protrusion may be formed on the rotating ring. The collection module is installed on the outer housing and can collect particles generated by relative rotation between the locking protrusion and the support protrusion. The collection module may still be located outside the closed space defined by the outer door and the outer housing. Alternatively, the outer door may rotate while the locking protrusion is connected to the outer door. In this case, a means, such as a bearing, for blocking the transmission of rotational force of the outer door to the inner door may be installed between the inner door and the outer door. In this case, the substrate may not rotate even when the outer door rotates. The collection module may be installed on the outer housing or the outer door.

[0065] In other alternative embodiments, the locking protrusion 155 may move in a manner other than rotational movement, for example, translational motion, relative to the support protrusion 153. In this case, too, metal particles generated during the switching from the first relationship to the second relationship can be collected by the collection module 170.

[0066] Although the present specification has described a high-pressure substrate processing apparatus 100 having dual chambers 110 and 120, the present invention is not limited thereto. A processing apparatus having a single chamber also falls within the scope of the present invention. The single chamber comprises a housing and a door. A substrate is placed in the chamber, and a process gas, specifically, a processing gas, is supplied to process the substrate. The fastening module 150 and the collecting module 170 can be applied to such a single chamber.

[0067] The configuration of the fastening module 150 and the collection module 170 can also be applied to a semi-dual chamber, which is an intermediate configuration between the dual chamber and the single chamber. The semi-dual chamber may have two housings (an inner housing and an outer housing) and one door. The two housings may be connected by their own shape or by using an additional member to form a closed space (corresponding to the protective space). As in the previous embodiment, the substrate may be placed in the processing chamber of the inner housing and the processing gas may be injected therein, and the protective gas may be injected into the closed space. Unlike the previous embodiment, the door is not completely protected by the protective gas and is exposed to the outside. The door may correspond to the outer door in the previous embodiment. The door can open and close the inner housing. Although a batch-type processing apparatus is exemplified in this specification, the present invention is not limited thereto. The present invention can also be applied to a single-wafer-type processing apparatus. [Explanation of symbols]

[0068] 100: High-pressure substrate processing equipment 110: Inner chamber 120: External chamber 121: External housing 125:Exterior door 130: Air supply module 140: Exhaust module 150: Fastening module 151: Rotating ring 153: Support protrusion 155: Locking protrusion 170: Collection module 171: First magnetic unit 173: Second magnetic unit 175: Third magnetic unit

Claims

1. an interior chamber configured to contain a substrate to be processed and a process gas supplied at a first pressure greater than atmospheric pressure; an outer housing containing the internal chamber; and an outer door formed to be movable between a closed state for closing the external housing and an open state for opening the external housing, the outer chamber being formed to contain a protective gas supplied at a second pressure set relative to the first pressure; a fastening module configured to fasten the outer housing and the outer door in the closed state; and a collection module positioned adjacent to a contact portion for fastening between the outer housing and the outer door, the collection module being configured to collect foreign matter; A high-pressure substrate processing apparatus comprising:

2. The fastening module comprises: a support protrusion coupled to the outer housing; and a locking protrusion coupled to the exterior door and supported by the support protrusion by switching from a first offset relationship relative to the support protrusion to a second corresponding relationship; The foreign matter is metal particles generated by contact between the support protrusion and the locking protrusion during switching from the first relationship to the second relationship; The collection module comprises: The high-pressure substrate processing apparatus according to claim 1 , further comprising a magnetic unit that generates a magnetic force for attracting the metal particles.

3. The magnetic force unit comprises: The high pressure substrate processing apparatus according to claim 2 , wherein the high pressure substrate processing apparatus is installed in one of the outer housing and the outer door.

4. The fastening module comprises: The support protrusion further includes a rotating member, The magnetic force unit comprises:

3. The high-pressure substrate processing apparatus according to claim 2, wherein the high-pressure substrate processing apparatus is installed on the outer housing via the rotating member.

5. The rotating member is a rotating ring rotatably mounted on the outer housing; The magnetic force unit comprises: The high pressure substrate processing apparatus according to claim 4 , wherein the support projection is attached to at least one of the support projection and the rotating ring.

6. The magnetic force unit comprises: a magnet; and 3. The high voltage substrate processing apparatus according to claim 2, further comprising a coating layer covering said magnet to prevent oxidation of said magnet.

7. The coating layer is 7. The high pressure substrate processing apparatus according to claim 6, wherein the coating material contains at least one of nickel, magnesium, titanium, tungsten, and chromium.

8. The magnetic force unit comprises: The high pressure substrate processing apparatus of claim 2 , including a plurality of magnets forming a circular array about a central axis of the outer door.

9. The plurality of magnets are The high-pressure substrate processing apparatus according to claim 8 , wherein the substrates are arranged so as to be classified into a plurality of groups according to the distance from the central axis.

10. a chamber comprising a housing and a door configured to open and close said housing; a fastening module configured to fasten the housing and the door together to maintain a process gas injected into the chamber at a pressure higher than atmospheric pressure; and a collection module located adjacent to a fastening contact portion between the housing and the door and configured to collect metal particles; The collection module comprises: A high-pressure substrate processing apparatus including a magnetic unit having a magnet to which the metal particles are attracted.

11. The fastening module comprises: a support projection coupled to the housing; and a locking protrusion coupled to the door and supported by the support protrusion by being switched from a first offset relationship relative to the support protrusion to a second corresponding relationship to the support protrusion; The metal particles are 11. The high-pressure substrate processing apparatus of claim 10, wherein the contact occurs between the support protrusion and the locking protrusion while the support protrusion rotates relative to the locking protrusion to switch from the first relationship to the second relationship.

12. The magnet is The high pressure substrate processing apparatus of claim 10 , further comprising a plurality of magnets arranged in a circular array around a central axis of the door.

13. The magnetic force unit comprises: The high-pressure substrate processing apparatus according to claim 10, wherein the magnet includes a coating layer coated with at least one material selected from the group consisting of nickel, magnesium, titanium, tungsten, and chromium.

14. The process gas is The process gas includes an active gas and a protective gas is an inert gas. The housing includes: an inner housing configured to contain the substrate to be processed and the process gas; and an outer housing that houses at least a portion of the inner housing and is coupled to the inner housing to form, together with the inner housing, a closed space that houses the protective gas; The door is The high pressure substrate processing apparatus of claim 10 , configured to close the inner housing.

15. The fastening module comprises: a support protrusion coupled to the outer housing; and a locking projection connected to the door and switched from a first position where the locking projection is offset relative to the support projection to a second position where the locking projection is supported on the support projection by rotating the door; The magnetic force unit comprises: The high pressure substrate processing apparatus of claim 14 , wherein the support protrusion and the locking protrusion are configured to capture the metal particles generated by contact between the support protrusion and the locking protrusion during switching from the first relationship to the second relationship.

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