Gas supply system for a shared gas supply architecture

Abstract

An exemplary substrate processing system may include a lid plate. The system may include a gas splitter seated on the lid plate. The gas splitter may define a number of gas inlets and gas outlets. The number of gas outlets may be greater than the number of gas inlets. The system may include a number of valve blocks joined to the gas splitter. Each valve block may define a number of gas lumens. An inlet of each of the gas lumens may be in fluid communication with one of the gas outlets. A joint between the gas splitter and each of the valve blocks may include a choke. The system may include a number of output manifolds seated on the lid plate. The system may include a number of output welds that may couple an outlet of one of the gas lumens to one of the output manifolds.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of and priority to U.S. patent application Ser. No. 17 / 120,976, filed December 14, 2020, entitled "GAS DELIVERY SYSTEM FOR A SHARED GAS DELIVERY ARCHITECTURE," the entire contents of which are incorporated herein by reference.

[0002]

[0002] The present technology relates to semiconductor processes and equipment. More particularly, the present technology relates to substrate processing systems and components. [Background technology]

[0003]

[0003] Semiconductor processing systems often utilize cluster tools to integrate multiple process chambers. This configuration can facilitate the performance of several sequential processing steps without removing the substrate from a controlled processing environment, or can enable similar processes to be performed on multiple substrates at once in a variable chamber. These chambers can include, for example, degassing chambers, pre-treatment chambers, transfer chambers, chemical vapor deposition chambers, physical vapor deposition chambers, etch chambers, metrology chambers, and other chambers. The combination of chambers in a cluster tool, and the process conditions and parameters under which these chambers operate, are selected to produce a particular structure using a specific process recipe and process flow.

[0004] Cluster tools often process multiple substrates by passing the substrates sequentially through a series of chambers and process steps. The process recipe and sequence is typically programmed into a microprocessor controller that directs, controls, and monitors the processing of each substrate through the cluster tool. Once an entire cassette of wafers has been successfully processed through the cluster tool, the cassette may be passed to yet another cluster tool or a stand-alone tool, such as a chemical-mechanical polisher, for further processing.

[0005]

[0005] Robots are typically used to transfer wafers through the various processing and holding chambers. The amount of time required for each process and handling step directly impacts the throughput of substrates per unit time. Substrate throughput in a cluster tool can be directly related to the speed of the substrate handling robot positioned in the transfer chamber. As processing chamber configurations become more advanced, traditional wafer transfer systems may become insufficient. Furthermore, as the scale of a cluster tool increases, the component configuration may not be able to adequately support processing or maintenance steps.

[0006]

[0006] Therefore, there is a need for improved systems and methods that can be used to efficiently guide substrates within a cluster tool environment. These and other needs are addressed by the present technique. Summary of the Invention

[0007] An exemplary substrate processing system may include a lid plate. The system may include a gas splitter seated on the lid plate. The gas splitter may define a plurality of gas inlets and a plurality of gas outlets. The number of the plurality of gas outlets may be greater than the number of the plurality of gas inlets. The system may include a plurality of valve blocks each joined to the gas splitter. Each of the plurality of valve blocks may define multiple gas lumens. An inlet of each of the gas lumens may be fluidly coupled to one of the plurality of gas outlets. A junction between the gas splitter and each of the plurality of valve blocks may include a choke having a diameter smaller than a diameter of each of the plurality of gas outlets and each of the gas lumen inlets. The system may include a plurality of output manifolds seated on the lid plate. The system may include a plurality of output welds. Each output weld may fluidly couple an outlet of one of the gas lumens to a respective one of the output manifolds.

[0008] In some embodiments, one of the gas lumens in each of the multiple valve blocks may define a bypass lumen that directs gas away from the processing chamber. The gas splitter may define multiple gas channels extending between multiple gas inlets and multiple gas outlets. At least one of the multiple gas channels may split the gas flow from a single gas inlet to two gas outlets. The system may include multiple input welds fluidly coupling multiple gas sources to the gas input of the gas splitter. The gas splitter and each of the multiple valve blocks may include a heat source. The system may include a remote plasma unit supported above the gas splitter. The remote plasma unit may be fluidly coupled to each of the multiple output manifolds. The system may include a center manifold coupled to an outlet of the remote plasma unit. The system may include multiple side manifolds, each fluidly coupled to one of the multiple outlet ports of the center manifold. Each of the multiple side manifolds may define a gas lumen fluidly coupled to one of the multiple output manifolds. Each of the plurality of side manifolds can include a cooling channel extending along at least a portion of the length of the side manifold. The system can include a plurality of processing chambers positioned below the lid plate. Each processing chamber can define a processing region fluidly coupled to one of the plurality of output manifolds.

[0009] Some embodiments of the present technology may also include a substrate processing system. The system may include a gas splitter defining a plurality of gas inlets and a plurality of gas outlets. The number of the plurality of gas outlets may be greater than the number of the plurality of gas inlets. The system may include a plurality of valve blocks each joined to the gas splitter. Each of the plurality of valve blocks may define multiple gas lumens. An inlet of each of the gas lumens may be fluidly coupled to one of the plurality of gas outlets. A junction between the gas splitter and each of the plurality of valve blocks may include a choke having a diameter smaller than a diameter of each of the plurality of gas outlets and each of the gas lumen inlets. The system may include a plurality of output welds. Each output weld may fluidly couple an outlet of one of the gas lumens to one of a plurality of output manifolds.

[0010] In some embodiments, the system may include a plurality of valves coupled to each of the valve blocks. The system may include a plurality of input welds fluidly coupling a plurality of gas sources to a gas input of the gas splitter. At least some of the plurality of input welds may include a single input and may define a gas channel that splits flow from the single input to a plurality of outputs. The system may include a heater jacket positioned around each of the plurality of input welds. The system may include a remote plasma unit supported above the gas splitter. The remote plasma unit may be fluidly coupled to each of the plurality of output manifolds. The system may include a support structure that elevates the remote plasma unit above an upper surface of the gas splitter. The support structure may include three support legs. The plurality of input welds may extend between two of the support legs. The system may include a plurality of isolation valves. Each of the plurality of isolation valves may be fluidly coupled between the remote plasma unit and one of the plurality of output manifolds. The system may include a lid plate that supports each of the plurality of output manifolds. The system can include a plurality of processing chambers positioned below a lid plate, each of which can define a processing region fluidly coupled to one of a plurality of output manifolds.

[0011] Some embodiments of the present technology may also include a substrate processing system. The system may include a plurality of processing chambers. Each processing chamber may define a processing region. The system may include a lid plate positioned above the plurality of processing chambers. The system may include a plurality of output manifolds seated on the lid plate. Each of the plurality of output manifolds may be fluidly coupled to the processing region of one of the plurality of processing chambers. The system may include a gas splitter seated on the lid plate. The gas splitter may define a plurality of gas inlets and a plurality of gas outlets. The system may include a plurality of valve blocks each joined to the gas splitter. Each of the plurality of valve blocks may define multiple gas lumens. An inlet of each of the gas lumens may be fluidly coupled to one of the plurality of gas outlets. A junction between the gas splitter and each of the plurality of valve blocks may include a choke having a diameter smaller than a diameter of each of the plurality of gas outlets and each of the gas lumen inlets. The system may include a plurality of welds. Each weld may fluidly couple the outlet of one of the gas lumens to a respective one of the output manifolds.

[0012] The above techniques may offer numerous advantages over conventional systems and techniques. For example, the processing system may provide multi-substrate processing capabilities that may be expanded far beyond conventional designs. Furthermore, the processing system may provide equal flow division among multiple chambers while preventing crosstalk between chambers. The processing system may also provide the ability to adjust deposition rates using flow path diversions. These and other embodiments, along with many of their advantages and features, are described in more detail in conjunction with the following description and accompanying figures.

[0013] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the drawings. [Brief explanation of the drawings]

[0014] [Figure 1] 1 is a schematic top view illustrating an exemplary processing system according to some embodiments of the present technique; [Figure 2] FIG. 1 is a schematic isometric view illustrating a transfer region of an exemplary chamber system in accordance with some embodiments of the present technique. [Figure 3] FIG. 1 is a schematic isometric view illustrating a transfer region of an exemplary chamber system in accordance with some embodiments of the present technique. [Figure 4] FIG. 1 is a schematic isometric view illustrating a transfer region of an exemplary chamber system in accordance with some embodiments of the present technique. [Figure 5] 1 is a schematic partial isometric view of a chamber system according to some embodiments of the present technique; [Figure 6] 1 is a schematic top view illustrating an exemplary processing system according to some embodiments of the present technique; [Figure 7] 1 is a schematic top view of an exemplary gas splitter in accordance with some embodiments of the present technique; FIG. [Figure 8] FIG. 1 is a schematic isometric view of an exemplary valve block according to some embodiments of the present technology; [Figure 9] 10 is a schematic top view illustrating an exemplary interface between a gas splitter and multiple valve blocks in accordance with some embodiments of the present technique; FIG. [Figure 10A] 1 is a schematic isometric view of an exemplary choke plate in accordance with some embodiments of the present technology; [Figure 10B] 1 is a schematic cross-sectional top view of an exemplary choke plate in accordance with some embodiments of the present technology; [Figure 11] 1 is a schematic isometric view illustrating an exemplary processing system according to some embodiments of the present technology; [Figure 12] 1 is a schematic isometric view of an exemplary support plate according to some embodiments of the present technology; FIG. [Figure 13] FIG. 1 is a schematic isometric view of an exemplary center manifold in accordance with some embodiments of the present technology; [Figure 14] FIG. 10 is a schematic isometric view of an exemplary side manifold in accordance with some embodiments of the present technology; DETAILED DESCRIPTION OF THE INVENTION

[0015]

[0029] Some of the figures are included as schematic diagrams. It should be understood that the figures are for illustrative purposes and should not be considered to be to scale or to ratio unless expressly stated to be to scale or to ratio. Furthermore, schematic diagrams are provided to aid understanding and may not include all aspects or information compared to realistic representations and may include exaggerated material for illustrative purposes.

[0016]

[0030] In the accompanying figures, similar components and / or features may be labeled with the same reference label. Furthermore, various components of the same type may be distinguished by following the reference label with a letter that distinguishes between the similar components. When only a first reference label is used herein, the description applies to any one of the similar components having the same first reference label, regardless of the letter.

[0017]

[0031] Substrate processing can involve time-intensive steps to add, remove, or otherwise modify material on wafers or semiconductor substrates. Efficient substrate movement can reduce queue times and increase substrate throughput. To increase the number of substrates processed within a cluster tool, additional chambers can be incorporated onto the mainframe. Transfer robots and processing chambers can be continually added by lengthening the tool, but this can become spatially inefficient as the footprint of the cluster tool expands. Therefore, the present technology can include cluster tools with an increased number of processing chambers within a limited footprint. To accommodate the limited footprint around the transfer robot, the technology can increase the number of processing chambers laterally outward from the robot. For example, a conventional cluster tool might include one or two processing chambers positioned around a centrally located section of the transfer robot to maximize the number of chambers radially around the robot. The present technology can extend this concept by incorporating additional chambers laterally outward as separate rows or groups of chambers. For example, the techniques are applicable to cluster tools that include 3, 4, 5, 6, or more processing chambers each accessible at one or more robot access locations.

[0018]

[0032] However, as additional process locations are added, accessing these locations from a central robot may no longer be feasible without additional transfer capabilities at each location. Some conventional techniques may include a wafer carrier on which the substrate remains seated during transfer. However, the wafer carrier may be a source of thermal non-uniformity and particle contamination on the substrate. The present technique overcomes these issues by incorporating a transfer section vertically aligned in the processing chamber region and a carousel or transfer device that can operate in cooperation with the central robot to access the additional wafer locations. The present technique, in some embodiments, may not use a conventional wafer carrier and may transfer a particular wafer from one substrate support to a different substrate support within the transfer region.

[0019]

[0033] Furthermore, using a single gas source to supply process gas to multiple chambers can result in uneven gas flow between the chambers and the potential for crosstalk between the chambers. The present technology overcomes these problems by incorporating passive flow control devices that ensure equal flow from the gas source between each chamber. Additionally, the present technology can incorporate isolation valves that prevent crosstalk between the chambers and prevent backflow to the remote plasma unit.

[0020]

[0034] While the remainder of the disclosure will always identify specific structures, such as a four-position chamber system, in which the present structures and methods may be employed, it will be readily understood that the present systems and methods are equally applicable to any number of structures and devices that can benefit from the described structural capabilities. Accordingly, the present technology should not be considered limited to use with only any particular structure. Furthermore, while an exemplary tool system is described to provide a foundation for the present technology, it should be understood that the present technology can be incorporated with any number of semiconductor processing chambers and tools that can benefit from some or all of the described processes and systems.

[0021]

[0035] 1 is a top view of one embodiment of a deposition, etch, bake, and cure chamber substrate processing tool or processing system 100 in accordance with some embodiments of the present technology. In the figure, a set of front-opening unified pods 102 deliver substrates of various sizes to one of the chamber systems or substrate processing regions 108 positioned in quad sections 109a-c, which may each be a substrate processing system having a transfer region fluidly coupled to multiple processing regions 108, before being received by robot arms 104a and 104b into a factory interface 103 and placed into a load lock or low-pressure holding area 106. While a quad system is illustrated, it should be understood that standalone chambers, twin chambers, and platforms incorporating other multiple chamber systems are similarly encompassed by the present technology. A second robot arm 110 housed in a transfer chamber 112 can be used to transport substrate wafers from the holding area 106 to the quad section 109 and back, and the second robot arm 110 can be housed in a transfer chamber to which each of the quad sections or processing systems can be connected. Each substrate processing region 108 can be equipped to perform multiple substrate processing steps, including cyclical layer deposition, atomic layer deposition, chemical vapor deposition, physical vapor deposition, as well as any number of deposition processes, including etching, pre-cleaning, annealing, plasma treatment, degassing, alignment, and other substrate processes.

[0022]

[0036] Each quad section 109 may include a transfer region capable of accepting substrates from and supplying substrates to the second robot arm 110. The transfer region of the chamber system may be aligned with the transfer chamber having the second robot arm 110. In some embodiments, the transfer region may be laterally accessible to the robot. In subsequent steps, components of the transfer section may vertically translate the substrate to the overlying processing region 108. Similarly, the transfer region may also be operable to rotate the substrate between positions within each transfer region. The substrate processing region 108 may include any number of system components for depositing, annealing, curing, and / or etching a material film on a substrate or wafer. In one configuration, two sets of processing regions, such as the processing regions in quad sections 109a and 109b, may be used to deposit material on the substrate, and a third set of processing chambers, such as the processing chambers or region in quad section 109c, may be used to cure, anneal, or process the deposited film. In another configuration, all three sets of chambers, such as all 12 chambers shown, may be configured to both deposit and / or cure a film on a substrate.

[0023]

[0037] As shown, the second robot arm 110 may include two arms for simultaneously delivering and / or retrieving multiple substrates. For example, each quad section 109 may include two accesses 107 along a surface of the transfer region housing that may be laterally aligned with the second robot arm. The accesses may be defined along a surface adjacent to the transfer chamber 112. In some embodiments, such as the illustrated embodiment, the first access may be aligned with a first substrate support of the quad section's plurality of substrate supports. Further, the second access may be aligned with a second substrate support of the quad section's plurality of substrate supports. The first substrate support may be adjacent to the second substrate support, and the two substrate supports may define a first row of substrate supports in some embodiments. As shown in the illustrated configuration, the second row of substrate supports may be positioned behind the first row of substrate supports laterally outward from the transfer chamber 112. The two arms of the second robot arm 110 may be spaced apart so that the two arms can simultaneously enter a quad section or chamber system to supply or retrieve one or two substrates to a substrate support in the transfer region.

[0024]

[0038] Any one or more of the described transfer areas may be incorporated with additional chambers separate from the fabrication system shown in different embodiments. It will be understood that additional configurations of deposition, etching, annealing, and curing chambers for material films are contemplated by processing system 100. Furthermore, any number of other processing systems may be utilized with the present techniques, which may incorporate transfer systems for performing any of the specific operations, such as transferring substrates. In some embodiments, a processing system that may provide access to multiple processing chamber areas while maintaining a vacuum environment in various sections, such as the described holding and transfer areas, may enable steps to be performed in multiple chambers while maintaining a specific vacuum environment between separate processes.

[0025]

[0039] As previously mentioned, processing system 100, or more specifically, a quad section or chamber system incorporated into processing system 100 or other processing systems, may include a transfer section positioned below the illustrated processing chamber region. FIG. 2 is a schematic isometric view illustrating the transfer section of an exemplary chamber system 200 according to some embodiments of the present technology. FIG. 2 may illustrate additional aspects or variations of aspects of the transfer region described above, and may include any of the components or features described. The illustrated system may include a transfer region housing 205, which may be a chamber body such as those described further below, that defines a transfer region that may include multiple components. The transfer region may further be defined from above, at least in part, by a processing chamber or region fluidly coupled to the transfer region, such as the processing chamber region 108 illustrated in quad section 109 of FIG. 1. Sidewalls of the transfer region housing may define one or more access locations 207 through which substrates may be loaded and retrieved, such as by a second robot arm 110 as described above. The access locations 207 may be slit valves or other sealable access locations, which in some embodiments include doors or other sealing mechanisms to provide a sealed environment within the transfer region housing 205. While illustrated as having two such access locations 207, it should be understood that some embodiments may include only a single access location 207, and may also include access locations on multiple sides of the transfer region housing. It should also be understood that the illustrated transfer section may be sized to accommodate any substrate size, including 200 mm, 300 mm, 450 mm, or larger or smaller substrates, including substrates characterized by any number of geometries or shapes.

[0026]

[0040] Within the transfer region housing 205, there may be multiple substrate supports 210 positioned about the transfer region volume. While four substrate supports are illustrated, it should be understood that any number of substrate supports is similarly encompassed by embodiments of the present technology. For example, approximately three, four, five, six, eight, or more substrate supports 210 may be housed in a transfer region according to embodiments of the present technology. The second robot arm 110 may supply substrates to either or both of the substrate supports 210a and 210b through the access 207. Similarly, the second robot arm 110 may retrieve substrates from these locations. Lift pins 212 may protrude from the substrate support 210, allowing the robot to access the substrate underneath. The lift pins may be fixed on the substrate support, or may be in a location where the substrate support can be recessed, or in some embodiments, the lift pins may even be able to raise or lower through the substrate support. The substrate support 210 may be vertically translatable and, in some embodiments, may extend to a processing chamber region of the substrate processing system, such as processing chamber region 108, positioned above the transfer region housing 205.

[0027]

[0041] The transfer region housing 205 can provide access 215 for an alignment system, which may extend through an aperture in the transfer region housing as shown and may also include an aligner that can operate in conjunction with a laser, camera, or other monitoring device projecting or transmitting through an adjacent aperture to determine whether a translating substrate is properly aligned. The transfer region housing 205 can also include a transfer apparatus 220 that can operate in a number of ways to position and move substrates between various substrate supports. In one example, the transfer apparatus 220 can move substrates on substrate supports 210a and 210b to substrate supports 210c and 210d, which may allow additional substrates to be fed into the transfer chamber. Additional transfer steps may include rotating the substrate between the substrate supports for additional processing in an overlying processing region.

[0028]

[0042] The transfer apparatus 220 may include a central hub 225, which may include one or more shafts extending into the transfer chamber. Coupled to the shafts may be an end effector 235. The end effector 235 may include multiple arms 237 extending radially or laterally outward from the central hub. While a central body is illustrated with arms extending therefrom, the end effector, in various embodiments, may additionally include separate arms, each coupled to a shaft or central hub. Any number of arms may be included in embodiments of the present technology. In some embodiments, the number of arms 237 may be similar to or equal to the number of substrate supports 210 included in the chamber. Thus, as shown, for four substrate supports, the transfer apparatus 220 may include four arms extending from the end effector. The arms may be characterized by any number of shapes and profiles, such as linear or arcuate profiles, as well as any number of distal profiles, including hooks, rings, forks, or other designs, for supporting a substrate and / or providing access to the substrate, such as for alignment or engagement.

[0029]

[0043] The end effector 235, or a component or portion of the end effector, can be used to contact the substrate during transfer or movement. These components, as well as the end effector, can be made of or include a number of materials, including conductive and / or insulating materials. In some embodiments, the materials can be coated or plated to withstand contact with precursors or other chemicals that may find their way into the transfer chamber from an overlying processing chamber.

[0030]

[0044] Additionally, materials may be provided or selected to withstand other environmental characteristics, such as temperature. In some embodiments, the substrate support may be operable to heat a substrate disposed thereon. The substrate support may be configured to elevate the temperature of the surface or substrate to temperatures of about 100°C or higher, about 200°C or higher, about 300°C or higher, about 400°C or higher, about 500°C or higher, about 600°C or higher, about 700°C or higher, about 800°C or higher, or higher. Any of these temperatures may be maintained during processing, and thus components of the transfer apparatus 220 may be exposed to any of these listed or included temperatures. Consequently, in some embodiments, any of the materials may be selected to accommodate these temperature conditions, and may include materials such as ceramics and metals, which may be characterized by relatively low coefficients of thermal expansion or other beneficial properties.

[0031]

[0045] The component joints may also be adapted for processing in high-temperature and / or corrosive environments. For example, if the end effector and end portion are each ceramic, the joints may include press fittings, snap fittings, or other fittings that may not include additional materials, such as bolts, that expand and contract with temperature and may crack the ceramic. In some embodiments, the end portion may be continuous with the end effector or monolithically formed therewith. Any number of other materials may be used that can facilitate processing or resistance during processing and are also encompassed by the present technology. The transfer device 220 may include numerous components and configurations that can facilitate movement of the end effector in multiple directions, including drive system components to which the end effector may be coupled and that may facilitate rotational movement, as well as vertical or lateral movement in one or more ways.

[0032]

[0046] 3 is a schematic isometric view illustrating a transfer region of an exemplary chamber system 300 according to some embodiments of the present technology. Chamber system 300 may be similar to the transfer region of chamber system 200 described above and may include similar components, including any of the components, features, or configurations described above. FIG. 3, in conjunction with the following figures, may also illustrate the coupling of certain components encompassed by the present technology.

[0033]

[0047] The chamber system 300 may include a chamber body 305 or housing that defines a transfer region. Within the defined volume, there may be multiple substrate supports 310 distributed about the chamber body, as described above. As described further below, each substrate support 310 may be vertically translatable along a central axis of the substrate support between a first position, as shown, and a second position where substrate processing may be performed. The chamber body 305 may also define one or more accesses 307 therethrough. A transfer apparatus 335 may be positioned within the transfer region and configured to engage and rotate substrates between the substrate supports 310 within the transfer region, as described above. For example, the transfer apparatus 335 may be rotatable about its central axis to reposition the substrate. The transfer apparatus 335 may be laterally translatable in some embodiments to further facilitate repositioning of the substrate on each substrate support.

[0034]

[0048] The chamber body 305 may include a top surface 306 that may provide support for overlying components of the system. The top surface 306 may define a gasket groove 308 that provides a seat for a gasket that provides an airtight seal of the overlying components for vacuum processing. Unlike some conventional systems, the chamber system 300, as well as other chamber systems according to some embodiments of the present technology, may include an open transfer region within the processing chamber, where the processing region may be formed above the transfer region. Because the sweep area by the transfer apparatus 335 is formed, supports or structures for isolating the processing region may not be available. As a result, the present technology may use an overlying lid structure, as described below, to form an isolated processing region above the open transfer region. Thus, in some embodiments, the seal between the chamber body and the overlying components may occur only around the outer chamber body wall that defines the transfer region, and no internal bond may be present. The chamber body 305 may also define an aperture 315, which may facilitate exhaust flow from the processing region of the overlying structure. The top surface 306 of the chamber body 305 may also define one or more gasket grooves around the apertures 315 for sealing with overlying components. Additionally, the apertures may provide positioning features that may facilitate stacking of components in some embodiments.

[0035]

[0049] 4 is a schematic isometric view illustrating structures above a chamber system 300 according to some embodiments of the present technology. For example, in some embodiments, a first lid plate 405 may be seated on the chamber body 305. The first lid plate 405 may be characterized by a first surface 407 and a second surface 409 opposite the first surface. The first surface 407 of the first lid plate 405 may contact the chamber body 305 and may define a pair of grooves for cooperating with the grooves 308 described above to create gasket channels between components. The first lid plate 405 may also define apertures 410, which may provide separation of the region above the transfer chamber that forms a processing region for substrate processing.

[0036]

[0050] The apertures 410 may be defined through the first lid plate 405 and may be at least partially aligned with the substrate supports of the transfer region. In some embodiments, the number of apertures 410 may be equal to the number of substrate supports of the transfer region, and each aperture 410 may be axially aligned with a substrate support of the plurality of substrate supports. As described further below, the processing region may be at least partially defined by the substrate supports when vertically elevated to a second position within the chamber system. The substrate supports may extend through the apertures 410 in the first lid plate 405. Accordingly, in some embodiments, the apertures 410 in the first lid plate 405 may be characterized by a diameter that is larger than the diameter of the associated substrate support. Depending on the amount of clearance, the diameter may be about 25% or less larger than the diameter of the substrate support, and in some embodiments may be about 20% or less larger, about 15% or less larger, about 10% or less larger, about 9% or less larger, about 8% or less larger, about 7% or less larger, about 6% or less larger, about 5% or less larger, about 4% or less larger, about 3% or less larger, about 2% or less larger, about 1% or less larger than the diameter of the substrate support, thereby providing a minimum gap distance between the substrate support and the opening 410.

[0037]

[0051] The first lid plate 405 may include a second surface 409 opposite the first surface 407. The second surface 409 may define a recessed ledge 415 that may create an annular recessed shelf that penetrates the second surface 409 of the first lid plate 405. In some embodiments, the recessed ledge 415 may be defined around each aperture of the plurality of apertures 410. The recessed shelf may provide support for a lid stack component, as described further below. Additionally, the first lid plate 405 may define a second aperture 420 that may at least partially define a pumping channel from an overlying component, as described below. The second aperture 420 may be axially aligned with the aperture 315 of the chamber body 305, as described above.

[0038]

[0052] 5 is a schematic partial isometric view illustrating a chamber system 300 according to some embodiments of the present technology. The view may show a partial cross section through two processing regions and a portion of the transfer region of the chamber system. For example, the chamber system 300 may be a quad section of the processing system 100 described above and may include any of the components or systems described above.

[0039]

[0053] The chamber system 300, as illustrated throughout the figures, may include a chamber body 305 defining a transfer region 502 including a substrate support 310 extending therein and capable of vertical translation as described above. A first lid plate 405 may overlie the chamber body 305 and define apertures 410 that, together with additional chamber system components, form access for a processing region 504. A lid stack 505 may be seated around or at least partially within each aperture, and the chamber system 300 may include multiple lid stacks 505, including a number of lid stacks equal to the number of apertures 410 among the plurality of apertures. Each lid stack 505 may be seated on the first lid plate 405 and may be seated on a shelf formed by a recessed ledge extending through a second surface of the first lid plate. The lid stacks 505 may at least partially define the processing region 504 of the chamber system 300.

[0040]

[0054] As shown, the processing region 504 may be vertically offset from the transfer region 502 but may be fluidly coupled to the transfer region. Additionally, the processing region may be isolated from the other processing regions. A processing region may be fluidly coupled to the other processing regions from below through the transfer region, but may be fluidly isolated from each of the other processing regions from above. Each lid stack 505 may also be aligned with a substrate support in some embodiments. For example, as shown, lid stack 505a may be aligned over substrate support 310a, and lid stack 505b may be aligned over substrate support 310b. When elevated to an operating position, such as the second position, the substrate supports may deliver substrates for individual processing in the separate processing regions. When in this position, each processing region 504 may be at least partially defined from below by the associated substrate support in the second position, as described further below.

[0041]

[0055] FIG. 5 also illustrates embodiments in which the chamber system may include a second lid plate 510. The second lid plate 510, in some embodiments, may be coupled to each lid stack, which may be positioned between the first lid plate 405 and the second lid plate 510. As described below, the second lid plate 510 may facilitate access to components of the lid stack 505. The second lid plate 510 may define a plurality of apertures 512 therethrough. Each aperture of the plurality of apertures may be defined to provide fluid access to a particular lid stack 505 or processing region 504. In some embodiments, a remote plasma unit 515 may optionally be included in the chamber system 300 and may be supported by the second lid plate 510. In some embodiments, the remote plasma unit 515 may be fluidly coupled to each aperture 512 of the plurality of apertures through the second lid plate 510. Isolation valves 520 may be included along each fluid line to provide fluid control to each individual processing region 504. For example, as shown, aperture 512a may provide fluid access to lid stack 505a. Aperture 512a may also be axially aligned with any of the lid stack components, and in some embodiments, substrate support 310a, thereby axially aligning each component associated with an individual processing region along a central axis passing through either the substrate support or the component associated with the particular processing region 504. Similarly, aperture 512b may provide fluid access to lid stack 505b and in some embodiments may be aligned, including axially aligned, with a component of the lid stack as well as substrate support 310b.

[0042]

[0056] 6 is a schematic top view illustrating one embodiment of a semiconductor processing system 600 in accordance with some embodiments of the present technology. The illustration may include components of any of the systems previously shown and described, and may illustrate additional aspects of any of the systems previously described. It should be understood that the illustration may also illustrate example components such as those found in any of the quad sections 109 described above.

[0043]

[0057] The semiconductor processing system 600 may include a lid plate 605, which may be similar to the second lid plate 510 described above. For example, the lid plate 605 may define multiple apertures, similar to the apertures 512, that provide access to multiple processing chambers positioned below the lid plate 605. Each aperture of the multiple apertures may be defined to provide fluid access to a particular lid stack, processing chamber, and / or processing region.

[0044]

[0058] The gas splitter 610 may sit on the top surface of the lid plate 605. For example, the gas splitter 610 may be centrally located between the apertures in the lid plate 605. The gas splitter 610 may be fluidly coupled to multiple input welds 615 that supply gases, such as precursors, plasma effluent, and / or purge gases, from multiple gas sources to the gas splitter 610. For example, each input weld 615 may extend vertically from a gas source positioned below the lid plate 605 and pass through a feed-through plate 620. A portion of the input weld 615 above the feed-through plate 620 may be bent horizontally to direct gas toward the gas splitter 610. In some embodiments, some or all of the input welds 615 may be located within a heater jacket 619, which helps prevent heat loss along the length of the input weld 615.

[0045]

[0059] As described further below, the gas splitter 610 can receive gas from an input weld 615 and recursively split the gas flow to more gas outputs, each coupled to a respective one of multiple valve blocks 625. The valve blocks 625 can be coupled to one or more valves 627 that help control the flow of gas through the valve blocks 625. For example, actuation of the valves 627 in each valve block 625 can control whether purge gas and / or process gas is flowed to a respective processing chamber or diverted from the processing chamber to another location in the system 600. For example, the outlets of each valve block 625 can each be fluidly coupled to an output weld 630 that can supply purge gas and / or process gas to an output manifold 635 associated with a particular processing chamber. For example, the output manifold 635 can be positioned over each aperture formed in the lid plate 605 and can be fluidly coupled to a lid stack component to supply one or more gases to the processing region of a respective processing chamber.

[0046]

[0060] 7 is a schematic top view showing a gas splitter 610 joined to multiple input welds 615. Each input weld 615 defines a gas channel formed between an inlet 616 and an outlet 618. The outlet 618 of each input weld 615 may be coupled to a respective gas inlet of the gas splitter 610, allowing gas to flow from each gas source through the input welds 615 and into the gas splitter 610. In some embodiments, one or more of the input welds 615 may have a single inlet 616 and branch into multiple outlets 618. For example, the illustrated embodiment includes a first input weld 615a having a single inlet 616 and a single outlet 618 that joins with a central gas inlet of the gas splitter 610. The second input weld 615b has a single inlet 616, and the gas channel is divided into two sections that direct gas flow to two separate outlets 618, each coupled to a gas inlet of the gas splitter 610. By way of example only, and not limitation, the first input weld 615a may supply a deposition gas, such as tetraethylorthosilicate (“TEOS”) or any other silicon-containing precursor, to the single gas inlet of the gas splitter 610. The second input weld 615b may supply an oxygen-containing precursor, such as diatomic oxygen incorporating oxygen, water, alcohol, or other materials, ozone, and / or nitrogen-containing precursors, to two or more gas inlets of the gas splitter 610. In some embodiments, one or more bypass welds 617 may be coupled to the gas splitter 610 to direct gas from the processing chamber and the gas splitter 610, for example, to an external gas container. Such an arrangement may allow up to three different chemistries to be supplied to the processing chamber (e.g., gas from only the first input weld 615a, gas from only the second input weld 615b, or gas from both the first input weld 615a and the second input weld 615b). As shown, the bypass weld 617 includes two branches, each of which connects to a gas splitter 610. The gas flow through each of these branches meets and is discharged from the gas splitter 610.It should be understood that other arrangements of welds are possible, including arrangements with more or fewer welds, with more welds allowing more chemical gas to be delivered to the processing chamber with a single weld arrangement.

[0047]

[0061] The gas splitter 610 may define multiple gas channels 606 extending between and fluidly coupling a gas inlet of the gas splitter 610 and a gas outlet 608 of the gas splitter 610. At least some of the gas channels 606 may divide the gas flow from a single gas inlet to multiple gas outlets 608 such that the gas splitter 610 includes a greater number of gas outlets 608 than gas inlets. As shown, four gas channels 606a extend radially outward from the outlet 618 of the first input weld 615a and divide the flow from the first input weld 615a to supply gas to four different gas outlets 608a. Each gas outlet 608a may be positioned on a different side of the gas splitter 610. This allows a single gas source to provide equal flow rates of gas through each of the four gas outlets 608a using a single input weld 615 (with a single outlet) and a single gas splitter 610. Two gas channels 606b may be fluidly coupled to respective outlets 618 of the second input weld 615b. Each gas channel 606b may feed a different one of four gas outlets 608b, with each gas outlet 608b positioned on a different side of the gas splitter 610. With this design, a single input weld 615 split into two outlets may feed four different gas outlets 608b. Each side of the gas splitter 610 may include an inlet for a bypass gas channel 606c. Each bypass gas channel 606c may be coupled to a bypass weld 617. It should be understood that the arrangement of the gas inlets, gas outlets 608, and gas channels 606 is merely representative of a single embodiment of the gas splitter 610, and that numerous variations in the arrangement and orientation of the gas inlets, gas outlets 608, and / or gas channels 606 are possible. Additionally, gas channels 606 may be arranged to provide any number of flow paths, including a single flow path, from a given gas inlet. Gas splitter 610 may be designed to accommodate any number of input welds from various gas sources, allowing the number of chemistries enabled by the gas splitter to be scaled to meet the needs of a particular process step.

[0048]

[0062] In some embodiments, the gas splitter 610 may include a heat source. For example, a heater cartridge 607 may be coupled to and / or embedded within the body of the gas splitter 610. In some embodiments, the heater cartridge 607 may be positioned in the center of the gas splitter 610, thereby achieving a uniform temperature gradient across the gas splitter 610. By disposing a heat source within the gas splitter 610, greater temperature control of the system 600 may be achieved, thereby improving the quality and uniformity of the film deposition process. The heat source may heat the gas splitter 610 to a temperature of about 75° C. or higher, about 100° C. or higher, about 125° C. or higher, about 150° C. or higher, about 175° C. or higher, about 200° C. or higher, or higher.

[0049]

[0063] 8 is a schematic isometric view illustrating one of the valve blocks 625. Each valve block 625 may define multiple gas lumens 626 that may supply gas from an inlet 628 to one or more valve positions 632. For example, a first gas lumen 626a may extend from an inlet 628a (which may be fluidly coupled to one of the gas outlets 608a of the gas splitter 610 to flow deposition gas) and may be fluidly coupled to a first valve position 632a and a second valve position 632b. A valve (such as valve 627) may be coupled to the first valve position 632a and may operate to selectively divert gas flowed through the first gas lumen 626a to a bypass gas lumen 626d, which may be fluidly coupled to the bypass gas channel 606c of the gas splitter 610. A valve may be coupled to the second valve position 632a and may operate to selectively flow gas through the supply gas lumen 626c to the supply outlet 634. The supply outlet 634 may be coupled to one of the output welds 630 to supply gas to one of the processing chambers via one of the output manifolds 635. In some embodiments, a valve bonded to a particular valve block 625 may divert the flow of deposition gas through the bypass gas lumen 626d while the flow rate of the deposition gas increases to a full flow rate. Once the full flow rate is reached, the valve may be switched to supply a steady full flow rate of deposition gas to the processing chamber via the supply outlet 634. The second gas lumen 626b extends from the inlet 628b (which may be fluidly coupled to one of the gas outlets 608b of the gas splitter 610) and may be fluidly coupled to the third valve position 632c. The valve may be coupled to a third valve position 632c that may operate to selectively direct gas flowed through the second gas lumen 626b to the second valve position 632b for subsequent delivery to the delivery outlet 634.

[0050]

[0064] 9 is a schematic top view illustrating a gas splitter 610 coupled to multiple valve blocks 625. As shown, the gas splitter 610 has four major sides, with a separate valve block 625 coupled to each side of the gas splitter 610. However, it should be understood that other numbers of valve blocks 625 can be coupled to a single gas splitter. In some embodiments, the number of valve blocks 625 can correspond to the number of processing chambers present in the processing system 600, such that each processing chamber can have its own dedicated valve block 625. This can allow gas flow to be switched independently in each valve block 625, allowing gas flow to be adjusted in a manner comparable to processing systems having separate gas sources for each processing chamber. For example, deposition gases can be flowed to all four processing chambers through the gas splitter 610 and valve blocks 625. If the deposition rate in one or more of the chambers is higher than the other chambers, the valve 627 and valve block 625 associated with the chamber(s) with the higher deposition rate can divert the flow of deposition gas from the respective chamber(s) to adjust the deposition rate of the individual chambers.

[0051]

[0065] When the gas splitter 610 is bonded to the valve block 625, the gas outlets 608 of the gas splitter 610 may be aligned and bonded to respective inlets 628 of the valve block 625 to provide a gas flow path from the gas splitter 610 to the supply gas outlets 634 and / or to provide a bypass flow path between the valve block 625 and the gas splitter 610. For example, each gas outlet 608a may be bonded to one of the inlets 628a of the valve block 625, and each gas outlet 608b may be bonded to one of the inlets 628b of the valve block 625. The exposed end of each bypass channel 606c of the gas splitter 610 may be bonded to the output of a bypass gas lumen 626d of one of the valve blocks 625.

[0052]

[0066] In some embodiments, each valve block 625 may include a heat source. For example, a heater cartridge 629 may be coupled to and / or embedded within the body of the valve block 625. In some embodiments, the heater cartridge 629 may be positioned proximate to the first gas lumen 626a (which may flow a process gas, such as TEOS) and may provide heat to the process gas. By disposing a heat source within the valve block 625, greater temperature control of the system 600 may be achieved, improving the quality and uniformity of the film deposition process. The heat source may heat the valve block 625 to a temperature of about 75°C or higher, about 100°C or higher, about 125°C or higher, about 150°C or higher, about 175°C or higher, about 200°C or higher, or higher.

[0053]

[0067] The interface between the gas splitter 610 and each valve block 625 may include a choke. For example, the opening of each gas outlet 608 of the gas splitter 610 and / or the opening of each inlet 628 of the valve block 625 may include a choke. The choke may be in the form of a choke plate defining an aperture having a narrow diameter relative to the gas channel 606 and / or gas lumen 626. FIG. 10A is a schematic isometric view illustrating one embodiment of a choke plate 640 secured to the gas outlet 608 of the gas splitter 610 (although some embodiments may alternatively or additionally include a choke plate at the inlet 628 of the valve block 625). The choke plate 640 may be received and secured within a slot 645 formed in the gas outlet 608. In some embodiments, one or more O-rings 655 may be used to seal the interface between the body of the choke plate 640 and the face of the gas splitter 610 and / or valve block 625 to prevent any gas flowing through the choke plate 640 from leaking through the interface, as shown in the schematic cross-sectional top view of FIG. 10B . The choke plate 640 may define a central orifice 650 having a diameter smaller than the diameters of the gas channels 606 and gas lumens 626. As shown, the upstream side of the central orifice 650 may have a smaller diameter than the downstream side of the central orifice 650. For example, the diameter of the central orifice 650 may taper and / or increase abruptly from the upstream side to the downstream side of the choke plate 640. In other embodiments, the central orifice 650 may have a constant diameter across the thickness of the choke plate 640. The small diameter of central orifice 650 relative to the diameter of gas channel 606 and gas lumen 626 allows central orifice 650 to serve as a passive flow control device, allowing downstream components (including valve blocks, output welds, manifolds, lid stacks, etc.) to be changed or replaced without the need for any further flow adjustments.Such changes can be made without further flow adjustments as long as the pressure upstream of choke plate 640 remains the same at each junction of gas splitter 610 and valve block 625, which may be accomplished by maintaining central orifice 650 the same size at each junction location. The choke point provided by central orifice 650 is such that the amount of gas flowing through the choke point depends only on the pressure upstream of central orifice 650, and therefore the flow rate through central orifice 650 is solely a function of the upstream pressure.

[0054]

[0068] O-rings or gaskets may be seated between each component of the system 600. In particular, O-rings or gaskets may be seated at the junctions of the various gas lines, which in some embodiments may seal the component connections and help prevent gas leaks.

[0055]

[0069] 11 is a schematic top view illustrating one embodiment of a semiconductor processing system 700 in accordance with some embodiments of the present technology. The illustration may include components of any of the systems shown and described above, including system 600, and may illustrate additional aspects of any of the systems described above. It should also be understood that the illustration may illustrate example components such as those found in any of the quad sections 109 described above.

[0056]

[0070] The semiconductor processing system 700 may include a lid plate 705, which may be similar to the second lid plate 510 described above. For example, the lid plate 705 may define multiple apertures, similar to the apertures 512, that provide access to multiple processing chambers positioned below the lid plate. The system 700 may include multiple input welds 715 extending upward from multiple gas sources. The input welds 715 may pass through and / or be otherwise attached to a feedthrough plate 720 before joining gas channels formed in the gas splitter 710. The gas splitter 710 may be joined to multiple valve blocks 725, which may include multiple valves 727 that control gas flow to each processing chamber and / or through bypass channels. Each valve block 725 may be fluidly coupled to one of multiple output manifolds 735 via output welds 730. Each output manifold 735 may be positioned over one of the apertures formed in the lid plate 705 and may be fluidly connected to one or more components of the lid stack and processing chamber positioned below each aperture.

[0057]

[0071] The remote plasma unit 760 may be supported on the lid plate 705 and may be fluidly coupled to each output manifold 730. For example, as described further below, each output manifold 730 may define a central aperture that may be fluidly coupled to the remote plasma unit 760 using a manifold assembly. The remote plasma unit 760 may be positioned on a support plate 765. A number of support legs 770 may extend between the top surface of the lid plate 705 and the bottom surface of the support plate 765 to elevate the remote plasma unit 760 to a height above each output manifold 730. The support legs 770 may be positioned radially outward of the gas splitter 710 and the valve block 725 such that the support legs 770 may extend to the top surface of the lid plate 705. For example, the support plate 765 may have first and second ends that extend beyond the gas splitter 710 and the valve block 725 and may be coupled to the support legs 770. A first end of the support plate 765 may be supported by a single support leg 770. A second end of the support plate 765 may include two protrusions 767 angled away from each other to define a central gap. Each protrusion 767 may be coupled to a separate support leg 770 such that the central gap extends downward to the upper surface of the lid plate 705. This central gap may provide access for an input weld 715 (and possibly a bypass weld) extending between the feedthrough plate 720 and the gas splitter 710. The central gap may also provide space for an additional input weld 719 extending between the gas source and the remote plasma unit 760. For example, a clean gas, such as argon, may be flowed to the remote plasma unit 760 via the additional input weld 719.

[0058]

[0072] As shown above, the remote plasma unit 760 can be fluidly coupled to each output manifold 730 using a manifold assembly. The remote plasma unit 760 can provide precursor, plasma effluent, and / or purge gases to the output manifold 730 for subsequent delivery to processing chambers for film deposition, chamber cleaning, and / or other processing steps. The manifold assembly can include a center manifold that couples to the base of the remote plasma unit 760 and can separate the flow from the single gas input of the remote plasma unit 760 into separate flows to each output manifold 730. Each separate gas flow of the center manifold can be coupled to a side manifold 775 that defines at least a portion of a dedicated flow path to one of the output manifolds 730. In some embodiments, an isolation valve 790 can be positioned between the side manifold 775 and each of the output manifolds 730. The isolation valves 790 not only provide fluid control to each processing chamber, but also prevent backflow of gases into the remote plasma unit 760 and may prevent crosstalk between the various processing chambers.

[0059]

[0073] FIG. 12 is a schematic isometric view illustrating a support plate 765. As previously described, the support plate 765 may include a first end having a single protrusion 767a and a second end having two protrusions 767b angled away from each other to define a central gap. Each protrusion 767b may be coupled to a separate support leg. An intermediate portion of the support plate 765 may be attached to a center manifold. For example, the intermediate portion of the support plate 765 may define a seat 769 for the center manifold. The seat 769 may include a recess 771 that may receive a mounting flange of the center manifold. The recess 771 may define a central aperture 773 that may receive the body of the center manifold.

[0060]

[0074] 13 is a schematic isometric view illustrating one embodiment of a center manifold 780 in accordance with some embodiments of the present technology. The center manifold 780 may be used in any of the preceding semiconductor processing systems, including systems 600 and 700. The center manifold 780 may include a body 782 defining a number of apertures 784. Each aperture 784 may extend through a different side of the body 782, and the number of apertures 784 may be equal to the number of output manifolds in the processing system. As shown, the body 782 has four sides, each defining an aperture 784. The body 782 may also define a vertically oriented central aperture 786 that may extend through a top surface of the body 782 and be in fluid communication with each aperture 784. The top surface of the body 782 may include a mounting flange 788. The body 782 of the center manifold 780 can be inserted into a central aperture in a support plate (such as central aperture 773 in support plate 765), and the mounting flange 788 can be received in a recess in the support plate (such as recess 771). The top surface of the mounting flange 788 can then be bonded to the bottom surface of the remote plasma unit. The outlet of the remote plasma unit can be aligned with the central aperture 786 so that gases flowed through the outlet are divided between apertures 784 and supplied to each output manifold via side manifolds, such as side manifold 775.

[0061]

[0075] 14 is a schematic isometric view illustrating a side manifold 775. The side manifold 775 can include a body 777 defining a fluid lumen 779 extending through at least a portion of the body 777. In some embodiments, a first end of the fluid lumen 779 can extend through a vertical plane at the proximal end of the body 777 and continue in a generally horizontal direction. The fluid lumen 779 can be curved such that a second end of the fluid lumen 779 extends through a horizontal plane at the distal end of the body 777. The proximal end of the body 777 can include a first mounting flange 781 that can be used to couple the side manifold 775 to a center manifold, such as center manifold 780, with the fluid lumen 779 of the side manifold 775 aligned with an aperture in the center manifold. The distal end of the body 777 may include a second mounting flange 783 that may be used to couple the side manifold 775 to one or more intervening components, such as the output manifold 730 and / or the isolation valve 790, with the fluid lumen 779 of the side manifold 775 fluidly coupled to the aperture defined by the output manifold 730. The body 777 may also define a recess that may receive one or more cooling channels 785, such as cooling lines 785 that extend along the length of the fluid lumen 779 and at least partially surround the fluid lumens in each of the first and second mounting flanges 781, 783. The body 777 may include and / or be coupled to two or more fluid ports 787 that may circulate coolant from a fluid source through the cooling lines 785. For example, the fluid ports 787 may be positioned on the first mounting flange 781. Coolant may enter one of the fluid ports 787, flow through the cooling channel 785, down a first side of and around the fluid lumen 779 in the first mounting flange 781. The coolant may then flow along the length of the body 777 before flowing around the fluid lumen 779 in the second mounting flange 783. The coolant may return in the opposite direction along another portion of the cooling channel 785 to the other fluid port 787. The use of cooling lines may help maintain a proper temperature of the manifold assembly and may help reduce radical loss through the manifold assembly.Additionally, by actively cooling each mounting flange, components directly coupled to the mounting flange, such as the center manifold, can also be cooled using cooling channels 785.

[0062]

[0076] In the foregoing specification, for purposes of explanation, numerous details have been set forth in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that particular embodiments may be practiced without some of these details or with additional details.

[0063]

[0077] While several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative constructions, and equivalents may be used without departing from the spirit of the embodiments. Moreover, in order to avoid unnecessarily obscuring the technology, many well-known processes and elements have not been described. Thus, the above description should not be deemed to limit the scope of the technology.

[0064]

[0078] Where a range of values ​​is provided, it is understood that each intervening value, to the smallest fraction of the unit of the lower limit, between the upper and lower limit of that range is also specifically disclosed, unless the context clearly dictates otherwise. Any narrower range between any stated value or unstated intervening value in a stated range and any other stated or intervening value in that stated range is also included. The upper and lower limits of these smaller ranges may independently be included or excluded, and each range where one, both, or neither of the smaller ranges is included is also encompassed within the technology, subject to any specifically excluded limit in the stated range. Where a stated range includes one or both of the limits, ranges excluding either or both of those included limits are also included.

[0065]

[0079] As used in this specification and the appended claims, the singular forms "a," "an," and "the" include plural references unless the context clearly dictates otherwise. Thus, for example, a reference to a "heater" includes a plurality of such heaters, a reference to an "aperture" includes a reference to one or more apertures and equivalents thereof known to those skilled in the art, and so forth.

[0066]

[0080] Also, as used in this specification and the claims that follow, the terms "comprise," "comprising," "contain," "containing," "include," and "including" specify the presence of stated features, integers, components, or steps, but do not exclude the presence or addition of one or more other features, integers, components, steps, practices, or groups.

Claims

1. 1. A semiconductor processing system comprising: A lid plate; a gas splitter seated on the lid plate, the gas splitter defining a plurality of gas inlets and a plurality of gas outlets, the number of the plurality of gas outlets being greater than the number of the plurality of gas inlets; a plurality of valve blocks each joined to the gas splitter, each of the plurality of valve blocks defining a number of gas lumens; an inlet of each of the gas lumens in fluid communication with one of the plurality of gas outlets; A junction between the gas splitter and each of the plurality of valve blocks includes a choke having a diameter smaller than a diameter of each of the plurality of gas outlets and each of the gas lumen inlets. a plurality of valve blocks; a plurality of output manifolds seated on the lid plate; a plurality of output welds, each output weld fluidly coupling an outlet of one of the gas lumens to a respective one of the output manifolds; A semiconductor processing system comprising:

2. 10. The semiconductor processing system of claim 1, wherein one of the gas lumens of each of the plurality of valve blocks defines a bypass lumen that directs gas away from a processing chamber.

3. 10. The semiconductor processing system of claim 1, wherein said gas splitter defines a plurality of gas channels extending between said plurality of gas inlets and said plurality of gas outlets.

4. 4. The semiconductor processing system of claim 3, wherein at least one of said plurality of gas channels splits gas flow from a single gas inlet to two gas outlets.

5. a plurality of input welds fluidly coupling a plurality of gas sources to the gas inputs of the gas splitter; The semiconductor processing system of claim 1 further comprising:

6. 10. The semiconductor processing system of claim 1, wherein said gas splitter and each of said plurality of valve blocks includes a heat source.

7. a remote plasma unit supported above the gas splitter, the remote plasma unit fluidly coupled to each of the plurality of output manifolds; The semiconductor processing system of claim 1 further comprising:

8. a center manifold coupled to an outlet of the remote plasma unit; a plurality of side manifolds, each fluidly coupled to one of the plurality of outlet ports of the center manifold, each of the plurality of side manifolds defining a gas lumen fluidly coupled to one of the plurality of output manifolds; The semiconductor processing system of claim 7 further comprising:

9. Each of the plurality of side manifolds further includes a cooling channel extending along at least a portion of the length of the side manifold.

9. The semiconductor processing system of claim 8, comprising:

10. a plurality of processing chambers positioned below the lid plate, each processing chamber defining a processing region fluidly coupled to one of the plurality of output manifolds; The semiconductor processing system of claim 1 further comprising:

11. 1. A semiconductor processing system comprising: a gas splitter defining a plurality of gas inlets and a plurality of gas outlets, the number of gas outlets being greater than the number of gas inlets; a plurality of valve blocks each joined to the gas splitter, each of the plurality of valve blocks defining a number of gas lumens; an inlet of each of the gas lumens in fluid communication with one of the plurality of gas outlets; A junction between the gas splitter and each of the plurality of valve blocks includes a choke having a diameter smaller than a diameter of each of the plurality of gas outlets and each of the gas lumen inlets. a plurality of valve blocks; a plurality of output welds, each output weld fluidly coupling an outlet of one of the gas lumens to one of a plurality of output manifolds; A semiconductor processing system comprising:

12. a plurality of valves coupled to each of the valve blocks; The semiconductor processing system of claim 11 further comprising:

13. a plurality of input welds fluidly coupling a plurality of gas sources to the gas inputs of the gas splitter; The semiconductor processing system of claim 11 further comprising:

14. At least some of the plurality of input welds include a single input and define a gas channel that divides flow from the single input to a plurality of outputs.

14. The semiconductor processing system of claim 13.

15. a heater jacket positioned around each of the plurality of input welds; 14. The semiconductor processing system of claim 13, further comprising:

16. a remote plasma unit supported above the gas splitter, the remote plasma unit fluidly coupled to each of a plurality of output manifolds; 14. The semiconductor processing system of claim 13, further comprising:

17. a support structure for elevating the remote plasma unit above an upper surface of the gas splitter, the support structure including three support legs, with a plurality of input welds extending between two of the support legs.

17. The semiconductor processing system of claim 16, further comprising:

18. a plurality of isolation valves, each of the plurality of isolation valves fluidly coupled between the remote plasma unit and one of the plurality of output manifolds; 17. The semiconductor processing system of claim 16, further comprising:

19. a lid plate supporting each of the plurality of output manifolds; a plurality of processing chambers positioned below the lid plate, each processing chamber defining a processing region fluidly coupled to one of the plurality of output manifolds; The semiconductor processing system of claim 11 further comprising:

20. 1. A semiconductor processing system comprising: a plurality of processing chambers, each processing chamber defining a processing region; a lid plate positioned above the plurality of processing chambers; a plurality of output manifolds seated on the lid plate, each of the plurality of output manifolds in fluid communication with a processing region of one of the plurality of processing chambers; a gas splitter seated on the lid plate, the gas splitter defining a plurality of gas inlets and a plurality of gas outlets; a plurality of valve blocks each joined to the gas splitter, each of the plurality of valve blocks defining a number of gas lumens; an inlet of each of the gas lumens in fluid communication with one of the plurality of gas outlets; A junction between the gas splitter and each of the plurality of valve blocks includes a choke having a diameter smaller than a diameter of each of the plurality of gas outlets and each of the gas lumen inlets. a plurality of valve blocks; a plurality of welds, each weld fluidly coupling an outlet of one of the gas lumens to a respective one of the output manifolds; A semiconductor processing system comprising:

Images