Substrate Processing Equipment

Abstract

To suppress pattern collapse accompanying adhesion of particles onto a substrate.SOLUTION: A substrate processing apparatus is a substrate processing apparatus that collectively performs dry processing of a plurality of substrates in a wet state. A substrate processing apparatus comprises a chamber, a holding part, a hydrophobic agent nozzle, a first organic solvent nozzle, a second organic solvent nozzle, and an exhaust port. The chamber has an airtight space that can accommodate a plurality of substrates. The holding part moves up and down the plurality of substrates between a reservoir region in which liquid is reserved of the airtight space and a dry region positioned above the reservoir region of the airtight space. The hydrophobic agent nozzle supplies steam of a hydrophobic agent to the dry region. The first organic solvent nozzle supplies an organic solvent from the dry region toward the reservoir region. The second organic solvent nozzle supplies steam of the organic solvent to the dry region. The exhaust port exhausts gas within the airtight space.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus. [Background technology]

[0002] In a drying process for drying a substrate such as a semiconductor wafer, there is a risk that a circuit pattern (hereinafter simply referred to as a "pattern") formed on the surface of the substrate may collapse due to the surface tension of the liquid.

[0003] Therefore, a technique is known in which an organic solvent is vaporized and the organic solvent vapor is brought into contact with the substrate after liquid processing to replace the processing liquid on the substrate with the organic solvent, and then the organic solvent is removed from the substrate by evaporation or the like, thereby drying the substrate while suppressing pattern collapse. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2013-058696 Summary of the Invention [Problem to be solved by the invention]

[0005] The present disclosure provides a technique capable of suppressing pattern collapse due to particle adhesion onto a substrate. [Means for solving the problem]

[0006] A substrate processing apparatus according to one aspect of the present disclosure is a substrate processing apparatus that collectively dries multiple wet substrates. The substrate processing apparatus according to the embodiment includes a chamber, a holding unit, a hydrophobizing agent nozzle, a first organic solvent nozzle, a second organic solvent nozzle, and an exhaust port. The chamber has an airtight space capable of accommodating multiple substrates. The holding unit raises and lowers the multiple substrates between a storage region in the airtight space where a liquid is stored and a drying region in the airtight space located above the storage region. The hydrophobizing agent nozzle supplies vapor of a hydrophobizing agent to the drying region. The first organic solvent nozzle supplies organic solvent from the drying region toward the storage region. The second organic solvent nozzle supplies vapor of the organic solvent to the drying region. The exhaust port exhausts gas from the airtight space. [Effects of the Invention]

[0007] According to the present disclosure, it is possible to suppress pattern collapse caused by particles adhering to a substrate. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment. [Figure 2] FIG. 2 is a schematic side view showing the configuration of the hydrophobizing agent nozzle and the second organic solvent nozzle according to the embodiment. [Figure 3] FIG. 3 is a flowchart showing an example of a procedure of a process executed by the substrate processing apparatus according to the embodiment. [Figure 4] FIG. 4 is a diagram showing an example of the operation of the substrate processing apparatus according to the embodiment. [Figure 5] FIG. 5 is a diagram showing an example of the operation of the substrate processing apparatus according to the embodiment. [Figure 6] FIG. 6 is a diagram showing an example of the operation of the substrate processing apparatus according to the embodiment. [Figure 7] FIG. 7 is a diagram showing an example of the operation of the substrate processing apparatus according to the embodiment. [Figure 8] FIG. 8 is a diagram showing an example of the operation of the substrate processing apparatus according to the embodiment. [Figure 9]FIG. 9 is a diagram showing an example of the operation of the substrate processing apparatus according to the embodiment. [Figure 10] FIG. 10 is a diagram showing an example of the operation of the substrate processing apparatus according to the embodiment. [Figure 11] FIG. 11 is a diagram showing an example of the operation of the substrate processing apparatus according to the embodiment. [Figure 12] FIG. 12 is a diagram showing an example of the operation of the substrate processing apparatus according to the embodiment. [Figure 13] FIG. 13 is a diagram showing an example of the operation of the substrate processing apparatus according to this embodiment. [Figure 14] FIG. 14 is a diagram showing an example of the operation of the substrate processing apparatus according to this embodiment. [Figure 15] FIG. 15 is a diagram showing an example of the operation of the substrate processing apparatus according to this embodiment. [Figure 16] FIG. 16 is a diagram showing an example of the operation of the substrate processing apparatus according to this embodiment. [Figure 17] FIG. 17 is a diagram showing an example of the operation of the substrate processing apparatus according to the first modified example. [Figure 18] FIG. 18 is a diagram showing an example of the operation of the substrate processing apparatus according to the first modified example. [Figure 19] FIG. 19 is a diagram showing an example of the operation of the substrate processing apparatus according to the second modified example. [Figure 20] FIG. 20 is a diagram showing an example of the operation of the substrate processing apparatus according to the second modified example. [Figure 21] FIG. 21 is a diagram showing an example of the operation of the substrate processing apparatus according to the second modified example. [Figure 22] FIG. 22 is a diagram showing an example of the operation of the substrate processing apparatus according to the second modified example. [Figure 23] FIG. 23 is a diagram showing an example of the operation of the substrate processing apparatus according to the third modified example. [Figure 24] FIG. 24 is a diagram showing an example of the operation of the substrate processing apparatus according to the third modified example. [Figure 25] FIG. 25 is a schematic side view showing the configuration of a hydrophobizing agent nozzle and a second organic solvent nozzle according to a fourth modified example. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, a mode for carrying out a substrate processing apparatus according to the present disclosure (hereinafter referred to as an "embodiment") will be described in detail with reference to the drawings. Note that the present disclosure is not limited to the embodiment. Furthermore, each embodiment can be appropriately combined within a range that does not cause contradiction in the processing content. Furthermore, the same components in each of the following embodiments are given the same reference numerals, and redundant explanations will be omitted.

[0010] Furthermore, in the following embodiments, expressions such as "constant," "orthogonal," "perpendicular," or "parallel" may be used, but these expressions do not necessarily mean "constant," "orthogonal," "perpendicular," or "parallel" in the strict sense. In other words, the above expressions allow for deviations due to, for example, manufacturing precision, installation precision, etc.

[0011] In addition, in the drawings referred to below, for ease of understanding, an orthogonal coordinate system may be shown in which the X-axis, Y-axis, and Z-axis directions are defined as being perpendicular to each other, and the positive Z-axis direction is the vertically upward direction.

[0012] <Configuration of the substrate processing apparatus> First, the configuration of a substrate processing apparatus according to an embodiment will be described with reference to Fig. 1. Fig. 1 is a schematic cross-sectional view of the substrate processing apparatus according to an embodiment.

[0013] 1 collectively dries a plurality of semiconductor substrates (hereinafter referred to as substrates W) that are wet after liquid processing. The liquid processing is not particularly limited, but may be, for example, an etching process or a cleaning process.

[0014] Each substrate W has a pattern formed on its surface, and if it is simply dried, the pattern may collapse due to the surface tension of the liquid that has entered between the patterns. For this reason, the substrate processing apparatus 100 brings the vapor of an organic solvent into contact with the substrate after liquid processing to replace the processing liquid on the substrate with a drying liquid, and then removes the organic solvent from the substrate by evaporation or the like. In this way, the substrate processing apparatus 100 can dry the substrate while suppressing pattern collapse.

[0015] Here, as a result of intensive research, the inventor of the present application found that there is a correlation between particles on a substrate and pattern collapse. Specifically, the inventor of the present application provided a particle amount gradient along the radial direction of the substrate, and measured the number of pattern collapses along the radial direction of the substrate (i.e., along the particle amount gradient). As a result, the inventor of the present application found that the number of pattern collapses increases as the particle amount increases. In this way, the inventor of the present application found that particles on a substrate are one of the factors that cause pattern collapse.

[0016] The adhesion of particles to a substrate occurs, for example, when particles adhering to the inside of a chamber where the substrate is dried are transferred onto the substrate. Therefore, the substrate processing apparatus 100 according to the embodiment is provided with a mechanism for cleaning the inside of the chamber, thereby suppressing particle contamination inside the chamber and further suppressing pattern collapse on the substrate.

[0017] 1, the substrate processing apparatus 100 includes a chamber 1 and a holding unit 2. The substrate processing apparatus 100 also includes a plurality of rinse nozzles 3, a plurality of hydrophobizing agent nozzles 4, a plurality of first organic solvent nozzles 5, a plurality of second organic solvent nozzles 6, and at least one third organic solvent nozzle 7. The substrate processing apparatus 100 also includes a control device 8.

[0018] (Chamber 1) The chamber 1 includes a processing tank 11 and a lid 12. The processing tank 11 is a container that is open at the top and can accommodate multiple substrates W arranged in a vertical position (vertical orientation). The processing tank 11 can store a rinse liquid supplied from a rinse nozzle 3, which will be described later. The rinse liquid is, for example, DIW (deionized water). The lid 12 is a member that covers the top of the processing tank 11 and is configured to be able to move up and down together with a holder 2, which will be described later. The lid 12 is configured to be able to move up and down by a moving mechanism 23, which will be described later, and multiple substrates W can be loaded into or unloaded from the chamber 1 by lifting the lid 12.

[0019] By placing the lid 12 on top of the processing tank 11, an airtight space 13 capable of accommodating multiple substrates W is formed inside the chamber 1. The chamber 1 may have a sealing member 14 such as an O-ring between the processing tank 11 and the lid 12. With this configuration, the airtightness of the airtight space 13 can be maintained.

[0020] The airtight space 13 has a storage region 131 in which DIW supplied from a rinse nozzle 3 (described later) is stored, and a drying region 132 located above the storage region 131. Specifically, the water level L is defined as a water level that can fully immerse multiple substrates W lowered to the lowest position to which the holder 2 can move them within the airtight space 13, but does not contact multiple substrates W raised to the highest position to which the holder 2 can move them within the airtight space 13. In this case, the storage region 131 is a region within the airtight space 13 that is below the water level L. The drying region 132 is a region within the airtight space 13 that is above the water level L. A third organic solvent nozzle 7 (described later) is located slightly above the water level L. Therefore, the storage region 131 may be defined as a region below the third organic solvent nozzle 7 (described later), and the drying region 132 may be defined as a region above the third organic solvent nozzle 7.

[0021] A drain port 15 for discharging DIW from the treatment tank 11 is provided on the bottom wall of the treatment tank 11. A drain path 151 is connected to the drain port 15. A valve 152 for opening and closing the drain path 151 is provided in the middle of the drain path 151. The valve 152 is electrically connected to a control unit 81 (described later) and is controlled to open and close by the control unit 81.

[0022] In addition, a plurality of exhaust ports 16 are provided on the side wall of the processing tank 11 to exhaust gas from the airtight space 13. The exhaust ports 16 are connected to an exhaust mechanism (not shown) such as a vacuum pump via an exhaust path 161. The atmosphere in the airtight space 13 is exhausted to the outside via the exhaust ports 16 and the exhaust path 161 by the exhaust mechanism.

[0023] The plurality of exhaust ports 16 are arranged above the hydrophobizing agent nozzle 4, which will be described later. The plurality of exhaust ports 16 are also arranged below the second organic solvent nozzle 6, which will be described later. With this configuration, the vapors (hydrophobizing agent vapor and organic solvent vapor) that fill the drying region 132 can be efficiently exhausted.

[0024] (Holding part 2) The holder 2 includes a holder 21, a shaft 22 that supports the holder 21, and a movement mechanism 23 that raises and lowers the shaft 22. The holder 21 holds multiple substrates W in a vertical position. The holder 21 also holds multiple substrates W arranged at regular intervals in the horizontal direction (here, the Y-axis direction). The shaft 22 extends in the vertical direction (here, the Z-axis direction) and supports the holder 21 at its lower part. The shaft 22 is slidably inserted into an opening (not shown) provided in the upper part of the lid 12.

[0025] The moving mechanism 23 includes, for example, a motor, a ball screw, a cylinder, etc., and is connected to the shaft 22 of the holder 2 to raise and lower the shaft 22. The moving mechanism 23 raises and lowers the shaft 22, thereby raising and lowering the holder 21 supported by the shaft 22. In this way, the moving mechanism 23 can raise and lower the plurality of substrates W held by the holder 21 between the storage area 131 and the drying area 132. The moving mechanism 23 is electrically connected to the control unit 81 of the control device 8 and is controlled by the control unit 81.

[0026] (various nozzles) The rinse nozzles 3 are arranged in the storage region 131. Specifically, the rinse nozzles 3 are provided at the bottom of the processing tank 11. A rinse liquid supply source 32 is connected to the rinse nozzles 3 via a supply path 31. The rinse liquid supply source 32 supplies DIW to the two rinse nozzles 3.

[0027] The supply path 31 is provided with a valve 34 and a flow rate regulator 35. The valve 34 opens and closes the supply path 31. The flow rate regulator 35 regulates the flow rate of the processing liquid flowing through the supply path 31. The valve 34 and the flow rate regulator 35 are electrically connected to the control unit 81 of the control device 8 and are controlled by the control unit 81.

[0028] The plurality of hydrophobizing agent nozzles 4, the plurality of first organic solvent nozzles 5, the plurality of second organic solvent nozzles 6, and the third organic solvent nozzle 7 are arranged in the drying region 132. Specifically, these are arranged on both side walls of the drying region 132 in the chamber 1.

[0029] These are arranged in the drying area 132 from bottom to top in the following order: third organic solvent nozzle 7, hydrophobizing agent nozzle 4, first organic solvent nozzle 5, and second organic solvent nozzle 6.

[0030] The hydrophobizing agent nozzle 4 supplies vapor of the hydrophobizing agent to the drying region 132. Specifically, the hydrophobizing agent nozzle 4 ejects the vapor of the hydrophobizing agent horizontally from near the side wall of the drying region 132 in the chamber 1 toward the inside of the drying region 132. The supply system for the vapor of the hydrophobizing agent will be described later.

[0031] The first organic solvent nozzle 5 is disposed above the hydrophobizing agent nozzle 4. The first organic solvent nozzle 5 supplies the organic solvent liquid from the drying region 132 toward the storage region 131. Specifically, the first organic solvent nozzle 5 is a spray nozzle that sprays the organic solvent liquid in a conical or fan shape. The multiple first organic solvent nozzles 5 are aligned along the arrangement direction (Y-axis direction) of the multiple substrates W. This allows the multiple first organic solvent nozzles 5 to efficiently supply the organic solvent liquid over the entire surfaces of the multiple substrates W.

[0032] An organic solvent supply source 52 is connected to the first organic solvent nozzles 5 via a supply path 51. The organic solvent supply source 52 supplies an organic solvent liquid to the plurality of first organic solvent nozzles 5. In the embodiment, the organic solvent supply source 52 supplies an IPA (isopropyl alcohol) liquid to the first organic solvent nozzles 5. Hereinafter, the IPA liquid will be referred to as an "IPA liquid."

[0033] The supply path 51 is provided with a valve 54 and a flow rate regulator 55. The valve 54 opens and closes the supply path 51. The flow rate regulator 55 regulates the flow rate of the IPA liquid flowing through the supply path 51. The valve 54 and the flow rate regulator 35 are electrically connected to a control unit 81 of the control device 8 and are controlled by the control unit 81.

[0034] The second organic solvent nozzle 6 is positioned higher than the first organic solvent nozzle 5. The second organic solvent nozzle 6 supplies the organic solvent vapor to the drying region 132. Specifically, the second organic solvent nozzle 6 ejects the organic solvent vapor from near the side wall of the drying region 132 in the chamber 1 upward or obliquely upward toward the top of the drying region 132, i.e., toward the lid 12. Note that FIG. 1 shows an example in which the second organic solvent nozzle 6 ejects the organic solvent vapor obliquely. Note that the supply system for the organic solvent vapor will be described later.

[0035] The third organic solvent nozzle 7 is disposed below the hydrophobizing agent nozzle 4. Specifically, the third organic solvent nozzle 7 is disposed at a position slightly higher than the liquid level (water level L) of the DIW stored in the storage region 131. The third organic solvent nozzle 7 supplies the organic solvent liquid to the liquid level of the DIW stored in the storage region 131. As a result, the third organic solvent nozzle 7 forms a liquid film of the organic solvent on the liquid surface of the DIW stored in the storage region 131.

[0036] An organic solvent supply source 72 is connected to the third organic solvent nozzle 7 via a supply path 71. The organic solvent supply source 72 supplies an organic solvent liquid to the third organic solvent nozzle 7. In the embodiment, the organic solvent supply source 72 supplies an IPA liquid to the third organic solvent nozzle 7.

[0037] The supply path 71 is provided with a valve 74 and a flow rate regulator 75. The valve 74 opens and closes the supply path 71. The flow rate regulator 75 regulates the flow rate of the IPA liquid flowing through the supply path 71. The valve 74 and the flow rate regulator 75 are electrically connected to a control unit 81 of the control device 8 and are controlled by the control unit 81.

[0038] (Control device 8) The control device 8 is, for example, a computer, and includes a control unit 81 and a storage unit 82. The storage unit 82 is realized by, for example, a semiconductor memory element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk, and stores programs that control various processes executed in the substrate processing apparatus 100. The control unit 81 includes a microcomputer having a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), input / output ports, etc., and various circuits, and controls the operation of the substrate processing apparatus 100 by reading and executing the programs stored in the storage unit 82.

[0039] Such a program may be recorded on a computer-readable storage medium and installed from that storage medium into the storage unit 82 of the control device 8. Examples of computer-readable storage media include hard disks (HDs), flexible disks (FDs), compact disks (CDs), magnetic optical disks (MOs), and memory cards.

[0040] (Supply system for hydrophobizing agent nozzle 4 and second organic solvent nozzle 6) FIG. 2 is a schematic side view showing the configuration of the hydrophobizing agent nozzle 4 and the second organic solvent nozzle 6 according to the embodiment.

[0041] 2, the hydrophobizing agent nozzle 4 includes a long, cylindrical main body 41 extending in the arrangement direction (Y-axis direction) of the plurality of substrates W, and a plurality of discharge ports 42 formed in the main body 41 at intervals along the arrangement direction of the plurality of substrates. The discharge ports 42 may be simple openings, or may be spray nozzle tips that spray the vapor of the hydrophobizing agent in a mist form. Furthermore, instead of the plurality of discharge ports 42, the hydrophobizing agent nozzle 4 may have slit-shaped discharge ports extending along the arrangement direction of the plurality of substrates W.

[0042] Similarly, the second organic solvent nozzle 6 includes a long, cylindrical main body 61 extending in the arrangement direction (Y-axis direction) of the plurality of substrates W, and a plurality of discharge ports 62 formed in the main body 61 at intervals along the arrangement direction of the plurality of substrates. The discharge ports 62 may be simple openings or may be spray nozzle tips that spray the organic solvent vapor in a mist. Furthermore, the second organic solvent nozzle 6 may have slit-shaped discharge ports extending along the arrangement direction of the plurality of substrates W, instead of the plurality of discharge ports 62.

[0043] The hydrophobizing agent nozzle 4 is connected to a steam supply system 45 via a supply path 46 (an example of a hydrophobizing agent supply path). The steam supply system 45 includes a hydrophobizing agent supply source 451, a gas supply source 452, valves 453 and 454, a heating unit 455, and a flow rate regulator 456. The hydrophobizing agent supply source 451 supplies a hydrophobizing agent in a liquid state, and the gas supply source 452 supplies N2 (nitrogen) gas (an example of a dry gas), which is an inert gas.

[0044] Here, the hydrophobizing agent is, for example, a hydrophobizing agent diluted with thinner to a predetermined concentration for hydrophobizing the surface of the substrate W. As the raw material hydrophobizing agent, for example, a silylation agent, a silane coupling agent, or the like can be used.

[0045] Specifically, for example, TMSDMA (trimethylsilyldimethylamine), DMSDMA (dimethylsilyldimethylamine), TMSDEA (trimethylsilyldiethylamine), HMDS (hexamethyldimethylazane), etc. can be used as the hydrophobizing agent for the raw material.

[0046] As the thinner, an ether solvent, an organic solvent belonging to the ketone group, etc. Specifically, for example, PGMEA (propylene glycol monomethyl ether acetate), cyclohexanone, HFE (hydrofluoroether), etc. can be used.

[0047] The hydrophobizing agent supply source 451 is connected to a heating unit 455 via a valve 453, and the gas supply source 452 is connected to the heating unit 455 via a valve 454. The valves 453 and 454 are electrically connected to the control unit 81, and are controlled to open and close by the control unit 81.

[0048] When both valves 453 and 454 are opened, a mixed fluid of a hydrophobizing agent liquid supplied from the hydrophobizing agent supply source 451 and N2 gas supplied from the gas supply source 452 is supplied to the heating unit 455. The heating unit 455 generates vapor of the hydrophobizing agent (hereinafter referred to as "hydrophobizing agent vapor") by heating the mixed fluid. A two-fluid nozzle (not shown) is provided downstream of the valve 453, and the mixed fluid misted by the two-fluid nozzle is supplied to the heating unit 455.

[0049] On the other hand, when only valve 454 is opened, N2 gas is supplied to heating unit 455 from gas supply source 452. In this case, heating unit 455 generates hot N2 gas by heating the N2 gas. Heating unit 455 is connected to hydrophobizing agent nozzle 4 via supply path 46 and supplies hydrophobizing agent vapor or hot N2 gas to hydrophobizing agent nozzle 4.

[0050] The flow rate regulator 456 adjusts the flow rate of the gas supplied to the heating unit 455. For example, the flow rate regulator 456 is configured to include a flow meter, a constant flow valve, an electropneumatic regulator, etc., and can adjust the pressure of the gas (N2 gas) supplied to the electropneumatic regulator, thereby adjusting the flow rate of the gas supplied to the heating unit 455. The flow rate regulator 456 is electrically connected to the control unit 81 and controlled by the control unit 81.

[0051] The second organic solvent nozzle 6 is connected to a vapor supply system 65 via a supply path 66 (an example of a second organic solvent supply path). The vapor supply system 65 includes an organic solvent supply source 651, a gas supply source 652, valves 653 and 654, a heating unit 655, and a flow rate regulator 656. The organic solvent supply source 651 supplies an organic solvent liquid, and the gas supply source 652 supplies N2 gas, which is an inert gas. In this embodiment, the organic solvent supply source 651 supplies an IPA liquid.

[0052] The organic solvent supply source 651 is connected to a heating unit 655 via a valve 653, and the gas supply source 652 is connected to the heating unit 655 via a valve 654. The valves 653 and 654 are electrically connected to the control unit 81, and are controlled to open and close by the control unit 81.

[0053] When both valves 653 and 654 are opened, a mixed fluid of IPA liquid supplied from organic solvent supply source 651 and N gas supplied from gas supply source 452 is supplied to heating unit 655. Heating unit 455 generates IPA vapor by heating the mixed fluid. A two-fluid nozzle (not shown) is provided downstream of valve 653, and the mixed fluid misted by the two-fluid nozzle is supplied to heating unit 655.

[0054] On the other hand, when only valve 654 is opened, N2 gas is supplied to heating unit 655 from gas supply source 652. In this case, heating unit 655 generates hot N2 gas by heating the N2 gas. Heating unit 655 is connected to second organic solvent nozzle 6 via supply path 66 and supplies IPA vapor or hot N2 gas to second organic solvent nozzle 6.

[0055] The flow rate regulator 656 adjusts the flow rate of the gas supplied to the heating unit 655. For example, the flow rate regulator 656 is configured to include a flow meter, a constant flow valve, an electropneumatic regulator, etc., and can adjust the pressure of the gas (N2 gas) supplied to the electropneumatic regulator, thereby adjusting the flow rate of the gas supplied to the heating unit 655. The flow rate regulator 656 is electrically connected to the control unit 81 and is controlled by the control unit 81.

[0056] The hydrophobizing agent nozzle 4 ejects hydrophobizing agent vapor or hot N2 gas horizontally toward the plurality of substrates W. The second organic solvent nozzle 6 ejects IPA vapor or hot N2 gas upward or obliquely upward toward the plurality of substrates W.

[0057] <Specific operation of the substrate processing apparatus> Next, specific operations of the substrate processing apparatus 100 according to the embodiment will be described with reference to Fig. 3 to Fig. 17. Fig. 3 is a flowchart showing an example of a procedure of processing performed by the substrate processing apparatus 100 according to the embodiment. Figs. 4 to 17 are views showing examples of operations of the substrate processing apparatus 100 according to the embodiment.

[0058] 3, a pre-rinse process is performed in the substrate processing apparatus 100 (step S101). The pre-rinse process corresponds to an example of a first placement step. Specifically, before multiple substrates W are loaded into the chamber 1, the control unit 81 opens the valve 34 to supply DIW from the rinse liquid supply source 32 to the processing tank 11 in the chamber 1, thereby storing DIW in the processing tank 11. Thereafter, the control unit 81 controls the moving mechanism 23 to lower the lid 12 and the shaft 22. As a result, the upper opening of the processing tank 11 is closed by the lid 12, and an airtight space 13 is formed in the chamber 1.

[0059] Next, the control unit 81 controls the moving mechanism 23 to lower the shaft 22, thereby immersing the plurality of substrates W in the DIW stored in the processing tank 11 (see FIG. 4). By immersing the plurality of substrates W in DIW in this manner, drying of the plurality of substrates W can be suppressed.

[0060] Next, in the substrate processing apparatus 100, a humidity control process is performed (step S102). Specifically, the control unit 81 controls the steam supply system 45 to supply hot N2 gas from the hydrophobizing agent nozzle 4 into the drying region 132 (see FIG. 5). By supplying hot N2 gas into the drying region 132, the humidity in the drying region 132 can be reduced. This makes it possible to suppress deactivation of the hydrophobizing agent.

[0061] The supply of hot N2 gas into the drying region 132 is started simultaneously with or before the start of the pre-rinse process. The supply of hot N2 gas from the hydrophobizing agent nozzle 4 into the drying region 132 continues until just before the start of the hydrophobization process, which will be described later.

[0062] Next, in the substrate processing apparatus 100, a first IPA replacement process is performed to replace the liquid on the plurality of substrates W from DIW with IPA liquid (step S103). The first IPA replacement process corresponds to an example of a first replacement step.

[0063] Specifically, the control unit 81 opens the valve 152 (see FIG. 1) to discharge the DIW from the processing tank 11, thereby exposing the plurality of substrates W from the DIW (see FIG. 6). Then, the control unit 81 opens the valve 54 (see FIG. 1) to supply the IPA liquid from the first organic solvent nozzle 5 to the plurality of substrates W exposed from the DIW (see FIG. 7).

[0064] Next, the control unit 81 1 Organic Solvent Nozzle 5 While the IPA liquid is being discharged from the nozzle 23, the moving mechanism 23 is controlled to move the plurality of substrates W back and forth between the storage area 131 and the drying area 132. By moving the plurality of substrates W in this manner, IPA can be supplied evenly to the plurality of substrates W.

[0065] The number of times that the plurality of substrates W are reciprocated may be one or more than one. Furthermore, the movement of the plurality of substrates W may be a single movement from the storage area 131 to the drying area 132. Furthermore, the control unit 81 does not necessarily have to move the plurality of substrates W.

[0066] The moving speed of the plurality of substrates W may be, for example, 1 mm / sec or more and 300 mm / sec or less. By moving the plurality of substrates W at a relatively slow speed in this manner, the IPA liquid can be supplied more evenly to the plurality of substrates W.

[0067] When the first IPA replacement process is completed, the control unit 81 closes the valve 54 to stop the discharge of the IPA liquid from the first organic solvent nozzle 5 into the airtight space 13.

[0068] Next, the control unit 81 controls the moving mechanism 23 to move the plurality of substrates W from the storage area 131 to the drying area 132 (step S104). The process of step S104 corresponds to an example of a second arranging step.

[0069] It should be noted that step S104 is omitted when the first IPA replacement process (step S103) is completed with multiple substrates W positioned in the drying area 132. In this case, the first IPA replacement process corresponds to an example of a second placement step.

[0070] Next, in the substrate processing apparatus 100, a hydrophobization process is performed to hydrophobize the substrates W by replacing the liquid on the substrates W from IPA with a hydrophobizing agent (step S105). The hydrophobization process in step S105 corresponds to an example of a second substitution process.

[0071] Specifically, the control unit 81 opens the valve 34 to store DIW in the processing tank 11, while controlling the steam supply system 45 to supply hydrophobizing agent vapor from the hydrophobizing agent nozzle 4 to the drying region 132 (see FIG. 8). The supply of the hydrophobizing agent vapor continues even after the DIW has been stored in the processing tank 11 (see FIG. 9). By supplying the hydrophobizing agent vapor into the drying region 132 while exhausting the gas in the drying region 132 from the exhaust port 16, the atmosphere in the drying region 132 is replaced with the hydrophobizing agent vapor. As a result, the IPA on the multiple substrates W is replaced with the hydrophobizing agent, and the multiple substrates W are hydrophobized.

[0072] In the substrate processing apparatus 100 according to the embodiment, during the hydrophobization process, by storing DIW in the processing tank 11 and supplying hydrophobizing agent vapor to the drying area 132, it is possible to prevent residues of the hydrophobizing agent from adhering to the inner walls of the processing tank 11.

[0073] Next, the control unit 81 controls the steam supply system 45 to stop the supply of the hydrophobizing agent vapor from the hydrophobizing agent nozzle 4 to the drying area 132. Thereafter, the control unit 81 opens the valve 152 to discharge the DIW from the treatment tank 11, and opens the valve 54 to discharge the DIW. 1 Organic Solvent Nozzle 5 The IPA liquid is supplied from the nozzle 11 to the airtight space 13 (see FIG. 10). 1 Organic Solvent Nozzle 5 The IPA liquid is sprayed in a cone or fan shape from the drying area 132 toward the storage area 131. This makes it possible to remove the hydrophobizing agent adhering to the inner wall of the chamber 1 over a wide area.

[0074] After stopping the supply of the hydrophobizing agent vapor, the control unit 81 controls the vapor supply system 65 to start supplying hot N 2 gas from the second organic solvent nozzle 6 to the airtight space 13 .

[0075] Next, the control unit 81 controls the moving mechanism 23 to move the plurality of substrates W from the drying area 132 to the storage area 131 (step S106). The process of step S106 corresponds to an example of a third arranging step.

[0076] Next, in the substrate processing apparatus 100, a second IPA replacement process is performed to replace the hydrophobizing agent on the plurality of substrates W with IPA (step S107). The second IPA replacement process corresponds to an example of a third replacement step.

[0077] Specifically, the control unit 81 performs the following in step S105: 1 Organic Solvent Nozzle 5 The IPA liquid is supplied from the reservoir 131 to the reservoir 131. In step S106, the control unit 81 also places the plurality of substrates W in the reservoir 131. As a result, in the second IPA replacement process, the IPA liquid is supplied to the plurality of substrates W, and the hydrophobizing agent on the plurality of substrates W is washed away with the IPA.

[0078] The control unit 81 also 1 Organic Solvent Nozzle 5 While the IPA liquid is being discharged from the nozzle 23, the moving mechanism 23 is controlled to move the plurality of substrates W back and forth between the storage area 131 and the drying area 132 (see FIG. 11). By moving the plurality of substrates W in this manner, IPA can be supplied evenly to the plurality of substrates W.

[0079] The number of times that the plurality of substrates W are reciprocated may be one or more than one. Furthermore, the movement of the plurality of substrates W may be a single movement from the storage area 131 to the drying area 132. Furthermore, the control unit 81 does not necessarily have to move the plurality of substrates W.

[0080] The moving speed of the plurality of substrates W may be, for example, 1 mm / sec or more and 300 mm / sec or less. By moving the plurality of substrates W at a relatively slow speed in this manner, the IPA liquid can be supplied more evenly to the plurality of substrates W.

[0081] The control unit 81 stops the movement of the plurality of substrates W by the moving mechanism 23 in a state where the plurality of substrates W are positioned in the storage area 131. 1 Organic Solvent Nozzle 5While continuing to supply the IPA liquid from the processing tank 11 to the airtight space 13, the valve 34 is opened to store DIW in the processing tank 11. As a result, the plurality of substrates W are immersed in DIW, and the IPA adhering to the plurality of substrates W is washed away by the DIW (see FIG. 12).

[0082] Next, in the substrate processing apparatus 100, a chamber cleaning process is performed to remove the hydrophobizing agent attached to the inner wall of the chamber 1 with IPA (step S108).

[0083] Specifically, the control unit 81 controls the vapor supply system 65 to supply IPA vapor from the second organic solvent nozzle 6 to the airtight space 13 (drying region 132) (see FIG. 13). By supplying IPA vapor into the drying region 132 while exhausting the gas in the drying region 132 from the exhaust port 16, the atmosphere in the drying region 132 is replaced with IPA vapor. As a result, the hydrophobizing agent adhering to the inner wall of the chamber 1 is removed from the inner wall of the chamber 1 by the IPA vapor. In other words, the inner wall of the chamber 1 is cleaned.

[0084] In this way, the substrate processing apparatus 100 according to the embodiment uses IPA vapor to remove the hydrophobizing agent adhering to the inner wall of the chamber 1. This prevents the adhesion of residues of the hydrophobizing agent to the inner wall of the chamber 1, and therefore prevents the transfer of residues of the hydrophobizing agent from the chamber 1 onto the substrates W. Therefore, the substrate processing apparatus 100 according to the embodiment can prevent pattern collapse caused by the adhesion of particles to the substrates W.

[0085] Furthermore, during the chamber cleaning process, the plurality of substrates W are immersed in the DIW stored in the processing tank 11. By immersing the plurality of substrates W in water while the IPA vapor is being supplied in this manner, it is possible to prevent the hydrophobizing agent removed from the chamber 1 from adhering to the plurality of substrates W.

[0086] Here, in the chamber cleaning process, the plurality of substrates W are protected by immersing the plurality of substrates W in DIW. However, the liquid in which the plurality of substrates W are immersed in the chamber cleaning process may be a liquid other than DIW. For example, in the chamber cleaning process, the substrate processing apparatus 100 may store IPA in the processing tank 11 and immerse the plurality of substrates W in the IPA.

[0087] In the chamber cleaning process, the control unit 81 supplies DIW from the rinse nozzle 3 to the processing tank 11 while discharging the DIW in the processing tank 11 from the drain port 15. This allows the substrate processing apparatus 100 to keep the DIW in the processing tank 11 clean during the chamber cleaning process.

[0088] Thereafter, the control unit 81 controls the vapor supply system 65 to stop the supply of IPA vapor from the second organic solvent nozzle 6 to the airtight space 13, thereby completing the chamber cleaning process.

[0089] Next, a rinse process is performed in the substrate processing apparatus 100 (step S109). Specifically, the control unit 81 continues the process of supplying DIW from the rinse nozzle 3 to the processing tank 11 for a certain period of time while discharging the DIW in the processing tank 11 from the drain port 15 (see FIG. 14). This allows the hydrophobizing agent removed from the inner wall of the chamber 1 and the IPA used to clean the chamber 1 to be discharged from the chamber 1 together with the DIW.

[0090] Furthermore, the control unit 81 controls the vapor supply system 65 to supply hot N2 gas from the second organic solvent nozzle 6 to the airtight space 13. As a result, the atmosphere in the airtight space 13 is replaced with an inert atmosphere.

[0091] Next, a third IPA replacement process is performed in the substrate processing apparatus 100 (step S110). Specifically, the control unit 81 controls the moving mechanism 23 to move the plurality of substrates W from the storage region 131 to the drying region 132, while controlling the vapor supply system 65 to supply IPA vapor from the second organic solvent nozzle 6 to the airtight space 13 (see FIG. 15). When the IPA vapor comes into contact with the surfaces of the plurality of substrates W, the DIW adhering to the surfaces of the plurality of substrates W is replaced with IPA.

[0092] The control unit 81 discharges the DIW stored in the processing bath 11 from the drain port 15 in parallel with the supply of IPA vapor to the airtight space 13 and the lifting up of the plurality of substrates W.

[0093] Next, a dry gas supply process is performed in the substrate processing apparatus 100 (step S111). Specifically, the control unit 81 controls the vapor supply system 65 to supply hot N2 gas from the second organic solvent nozzle 6 to the airtight space 13 (see FIG. 16). This promotes volatilization of the IPA remaining on the surfaces of the substrates W, thereby drying the substrates W.

[0094] Next, an unloading process is performed in the substrate processing apparatus 100 (step S112). Specifically, the control unit 81 controls the moving mechanism 23 to raise the lid 12 and the holder 2. Thereafter, the control unit 81 controls a substrate transfer device (not shown) to transfer the plurality of substrates W from the holder 21 to the substrate transfer device (not shown).

[0095] (First Modification) Next, a description will be given of a first modified example of the substrate processing apparatus 100 according to the embodiment. Figures 17 and 18 are diagrams showing an example of the operation of the substrate processing apparatus 100 according to the first modified example.

[0096] In the above-described embodiment, an example of a pre-rinse process in which DIW is stored in the processing tank 11 and multiple substrates W that are loaded into the processing tank 11 are immersed in the DIW is described, but the substrate processing apparatus 100 does not necessarily require multiple substrates W that are loaded into the processing tank 11 to be immersed in the DIW.

[0097] For example, the control unit 81 arranges the plurality of substrates W carried into the chamber 1 in an empty storage area 131 (i.e., no DIW is stored therein) (see FIG. 17). Then, the control unit 81 omits, for example, the humidity adjustment process (step S102) and performs the following as the first IPA replacement process (step S103): Open valve 54, No. 1 Organic Solvent Nozzle 5 The IPA liquid may be supplied to the airtight space 13 from the nozzle (see FIG. 18).

[0098] In this way, the substrate processing apparatus 100 according to the first modification can suppress an increase in humidity in the airtight space 13 by omitting the pre-rinse process. Therefore, according to the substrate processing apparatus 100 according to the first modification, the humidity adjustment process (step S102) can be omitted (or the time required for the humidity adjustment process can be reduced).

[0099] (Second Modification) Next, a second modified example of the substrate processing apparatus 100 according to the embodiment will be described. Figures 19 to 22 are diagrams showing an example of the operation of the substrate processing apparatus 100 according to the second modified example.

[0100] The substrate processing apparatus 100 may perform the IPA liquid film cleaning process, for example, after the rinsing process in step S109 and before the third IPA replacement process in step S110.

[0101] Specifically, after the rinsing process in step S109, the control unit 81 opens the valve 74 to supply IPA liquid from the third organic solvent nozzle 7 to the liquid surface of the DIW stored in the processing tank 11. As a result, a liquid film of IPA is formed on the liquid surface of the DIW (see FIG. 19).

[0102] Next, the control unit 81 controls the moving mechanism 23 to raise the plurality of substrates W so that they pass through the IPA liquid film (see FIG. 20).

[0103] In this way, by forming a liquid film of IPA on the surface of the DIW, in the process of subsequently lifting the plurality of substrates W from the DIW, the IPA present on the surface of the DIW can be attached to the surfaces of the plurality of substrates W. This reduces the amount of DIW remaining on the surfaces of the substrates W, thereby increasing the efficiency of replacing DIW with IPA.

[0104] The control unit 81 may move the plurality of substrates W back and forth between the storage area 131 and the drying area 132, thereby passing the IPA liquid film over the plurality of substrates W a plurality of times.

[0105] Next, the control unit 81 opens the valve 152 to discharge the DIW from the processing tank 11. In addition, the control unit 81 opens the valve 54 to supply the IPA liquid from the first organic solvent nozzle 5 to the airtight space 13 (see FIG. 21). This makes it possible to wash away the IPA residue adhering to the plurality of substrates W.

[0106] Thereafter, the control unit 81 opens the valve 34 to store the DIW in the processing tank 11 while supplying the IPA liquid from the first organic solvent nozzle 5 to the airtight space 13 (see FIG. 22). As a result, the plurality of substrates W are immersed in the DIW, and the IPA adhering to the plurality of substrates W is washed away by the DIW.

[0107] (Third Modification) Next, a description will be given of a third modified example of the substrate processing apparatus 100 according to the embodiment. Figures 23 and 24 are diagrams showing an example of the operation of the substrate processing apparatus 100 according to the third modified example.

[0108] The substrate processing apparatus 100 may perform the IPA liquid film cleaning process, for example, after the rinsing process in step S109 and before the third IPA replacement process in step S110.

[0109] Specifically, after the rinsing process in step S109, the control unit 81 opens the valve 74 to supply the IPA liquid from the third organic solvent nozzle 7 to the liquid surface of the DIW stored in the processing tank 11. As a result, a liquid film of IPA is formed on the liquid surface of the DIW (see FIG. 23).

[0110] Next, the control unit 81 opens the valve 152 to discharge the DIW from the processing tank 11 (see FIG. 24). As a result, the liquid level of the DIW drops, and the position of the IPA liquid film also drops. At this time, the IPA liquid film passes over the plurality of substrates W, and the IPA adheres to the surfaces of the plurality of substrates W.

[0111] In this way, a liquid film of IPA is formed on the surface of the DIW, and then the liquid level of the DIW is lowered, so that the IPA present on the liquid surface of the DIW can be attached to the surfaces of multiple substrates W. This reduces the amount of DIW remaining on the surfaces of the substrates W, thereby improving the efficiency of replacing DIW with IPA. Note that the subsequent processing is the same as in the third modified example described above, and therefore a description thereof will be omitted.

[0112] (Fourth Modification) Next, a fourth modified example of the substrate processing apparatus 100 according to the embodiment will be described. Fig. 25 is a schematic side view showing the configurations of the hydrophobizing agent nozzle 4 and the second organic solvent nozzle 6 according to the fourth modified example.

[0113] 25 , the substrate processing apparatus 100 may have a connection path 90 connecting a midpoint of the supply path 46 and a midpoint of the supply path 66. The substrate processing apparatus 100 may also include a first valve 47, a second valve 67, and a third valve 91. The first valve 47 is provided in the supply path 46. For example, the first valve 47 is provided between the hydrophobizing agent nozzle 4 and a connection path 90 and a junction between the supply path 46 and the connection path 90. The second valve 67 is provided in the supply path 66. For example, the second valve 67 is provided between the second organic solvent nozzle 6 and a junction between the supply path 66 and the connection path 90. The third valve 91 is provided in the connection path 90. The first valve 47, the second valve 67, and the third valve 91 correspond to an example of a switching unit.

[0114] In the substrate processing apparatus 100 according to the fourth modification, the control unit 81 controls the first valve 47, the second valve 67, and the third valve 91 to switch the destination of the IPA vapor between the second organic solvent nozzle 6 and the hydrophobizing agent nozzle 4. That is, the control unit 81 closes the first valve 47 and the third valve 91 and opens the second valve 67 to cause the IPA vapor to be discharged from the second organic solvent nozzle 6. On the other hand, the control unit 81 closes the second valve 67 and opens the first valve 47 and the third valve 91 to cause the IPA vapor to be discharged from the hydrophobizing agent nozzle 4.

[0115] As a result, the substrate processing apparatus 100 according to the fourth modification can remove the hydrophobizing agent remaining in the hydrophobizing agent nozzle 4 and the supply path 46 by using the IPA vapor.

[0116] Furthermore, in the chamber cleaning process (step S108) and the third IPA replacement process (step S110), the control unit 81 may alternately switch the destination of the IPA vapor between the second organic solvent nozzle 6 and the hydrophobizing agent nozzle 4. In this way, the IPA vapor can be distributed evenly throughout the drying region 132.

[0117] As described above, the substrate processing apparatus according to the embodiment (for example, the substrate processing apparatus 100) is a substrate processing apparatus that collectively dries multiple wet substrates (for example, the substrates W). The substrate processing apparatus according to the embodiment includes a chamber (for example, the chamber 1), a holder (for example, the holder 2), a hydrophobizing agent nozzle (for example, the hydrophobizing agent nozzle 4), a first organic solvent nozzle (for example, the first organic solvent nozzle 5), a second organic solvent nozzle (for example, the second organic solvent nozzle 6), and an exhaust port (for example, the exhaust port 16). The chamber has an airtight space (for example, the airtight space 13) that can accommodate multiple substrates. The holder raises and lowers the multiple substrates between a storage region (for example, the storage region 131) in the airtight space where a liquid (for example, DIW) is stored and a drying region (for example, the drying region 132) located above the storage region in the airtight space. The hydrophobizing agent nozzle supplies vapor of a hydrophobizing agent to the drying region. The first organic solvent nozzle supplies an organic solvent (e.g., IPA liquid) from the drying region toward the storage region. The second organic solvent nozzle supplies vapor of an organic solvent (e.g., IPA vapor) to the drying region. The exhaust port exhausts gas from the airtight space.

[0118] The substrate processing apparatus according to the embodiment can remove the hydrophobizing agent adhering to the inner wall of the chamber using the vapor of the organic solvent supplied from the second organic solvent nozzle. This prevents the residue of the hydrophobizing agent from adhering to the inner wall of the drying chamber, thereby preventing the residue of the hydrophobizing agent from being transferred from the chamber to the substrate. Therefore, the substrate processing apparatus according to the embodiment can prevent pattern collapse due to the adhesion of particles to the substrate.

[0119] The first organic solvent nozzle and the second organic solvent nozzle may be disposed above the hydrophobizing agent nozzle.

[0120] By locating the second organic solvent nozzle above the hydrophobizing agent nozzle, the inner wall located relatively higher in the chamber can be efficiently cleaned with organic solvent vapor, while by locating the first organic solvent nozzle above the hydrophobizing agent nozzle, the inner wall located relatively lower in the chamber can be efficiently cleaned.

[0121] The second organic solvent nozzle may supply the organic solvent vapor upward or obliquely upward, which allows for efficient cleaning of the inner wall located relatively higher in the chamber.

[0122] The substrate processing apparatus according to the embodiment includes a connection path (for example, connection path 90) and a switching unit (for example, first valve 47, second valve 67, and third valve 91). The connection path connects a midpoint of a second organic solvent supply path (for example, supply path 66) that supplies organic solvent vapor to the second organic solvent nozzle with a midpoint of a hydrophobizing agent supply path (for example, supply path 46) that supplies a hydrophobizing agent to the hydrophobizing agent nozzle. The switching unit switches the destination of the organic solvent vapor between the second organic solvent nozzle and the hydrophobizing agent nozzle.

[0123] This configuration allows the inner wall of the chamber to be cleaned more thoroughly. Furthermore, the hydrophobizing agent remaining inside the hydrophobizing agent supply channel can be removed by the vapor of the organic solvent. This prevents the hydrophobizing agent residue from adhering to the inside of the hydrophobizing agent supply channel and from being transferred onto the substrate. Therefore, the substrate processing apparatus according to the embodiment can further prevent pattern collapse due to particle adhesion on the substrate.

[0124] The substrate processing apparatus according to the embodiment may include a first vaporizer (for example, a vapor supply system 65) that vaporizes a hydrophobizing agent and a second vaporizer (for example, a vapor supply system 45) that vaporizes an organic solvent.

[0125] With this configuration, the hydrophobizing agent and the organic solvent can be vaporized under appropriate conditions (temperature, etc.).

[0126] The first organic solvent nozzle may spray the organic solvent in a cone or fan shape.

[0127] With this configuration, the organic solvent can be efficiently supplied to a plurality of substrates, and also to the inner wall of the chamber.

[0128] The hydrophobizing agent nozzle and the second organic solvent nozzle each include a main body (for example, main body 41, 61) and a plurality of discharge holes (for example, discharge ports 42, 62). The main body is a cylindrical member extending along the arrangement direction of the plurality of substrates. The plurality of discharge holes are formed in the main body at intervals along the arrangement direction of the plurality of substrates.

[0129] According to this configuration, the vapor of the hydrophobizing agent and the vapor of the organic solvent can be supplied into the chamber with a relatively simple configuration.

[0130] The exhaust port may be located above the hydrophobizing agent nozzle, which allows the steam filling the drying area to be efficiently exhausted.

[0131] Furthermore, a substrate processing method according to the embodiment is a substrate processing method for simultaneously drying a plurality of wet substrates. The substrate processing method according to the embodiment includes a first disposing step (e.g., step S101), a first replacing step (e.g., step S103), a second disposing step (e.g., step S104), a second replacing step (e.g., step S105), a third disposing step (e.g., step S106), a third replacing step (e.g., step S107), and a chamber cleaning step (e.g., step S108). The first disposing step disposes the plurality of substrates in a storage region of a chamber capable of accommodating the plurality of substrates and having an airtight space including a storage region for storing a liquid and a drying region located above the storage region. The first replacing step, after the first disposing step, supplies an organic solvent from a first organic solvent nozzle to the plurality of substrates to replace the liquid adhering to the plurality of substrates with the organic solvent. In the second placement process, after the first substitution process, a plurality of substrates are placed in a drying area. In the second substitution process, after the second substitution process, vapor of a hydrophobizing agent is supplied from a hydrophobizing agent nozzle to the plurality of substrates to replace the organic solvent adhering to the plurality of substrates with the hydrophobizing agent. In the third placement process, after the second substitution process, a plurality of substrates are placed in a storage area. In the third substitution process, after the third placement process, an organic solvent is supplied from a first organic solvent nozzle to the plurality of substrates to replace the hydrophobizing agent adhering to the plurality of substrates with the organic solvent. In the chamber cleaning process, after the third substitution process, a liquid (DIW, for example) is stored in the storage area, and with the plurality of substrates immersed in the liquid, vapor of the organic solvent is supplied from a second organic solvent nozzle to the drying area to clean the chamber.

[0132] Therefore, according to the substrate processing method of the embodiment, it is possible to suppress pattern collapse caused by particles adhering to the substrate.

[0133] The first disposing step may include disposing the plurality of substrates in a liquid storage area and immersing the plurality of substrates in the liquid. The substrate processing method according to the embodiment may further include a humidity control step (for example, step S102) of supplying a dry gas (for example, hot N2 gas) to the drying area at least after the first disposing step and before the second replacing step.

[0134] This configuration can prevent the hydrophobizing agent from being deactivated.

[0135] In the first replacing step, the organic solvent may be supplied from the first organic solvent nozzle to the plurality of substrates while the plurality of substrates are being moved from the storage region to the drying region.

[0136] With this configuration, the organic solvent can be supplied evenly to a plurality of substrates.

[0137] In the first replacing step, the organic solvent may be supplied from the first organic solvent nozzle to the plurality of substrates while the plurality of substrates are reciprocated at least once between the reservoir region and the drying region.

[0138] With this configuration, the organic solvent can be supplied more evenly to a plurality of substrates.

[0139] In the first replacing step, the plurality of substrates may be moved at a speed of 1 mm / sec or more and 300 mm / sec or less.

[0140] By moving the plurality of substrates at a relatively slow speed, the organic solvent can be supplied more evenly to the plurality of substrates.

[0141] In the third replacing step, the organic solvent may be supplied from the first organic solvent nozzle to the plurality of substrates while the plurality of substrates are being moved from the storage region to the drying region.

[0142] With this configuration, the organic solvent can be supplied evenly to a plurality of substrates.

[0143] In the third replacing step, the organic solvent may be supplied from the first organic solvent nozzle to the plurality of substrates while the plurality of substrates are reciprocated at least once between the reservoir region and the drying region.

[0144] With this configuration, the organic solvent can be supplied more evenly to a plurality of substrates.

[0145] In the third replacing step, the plurality of substrates may be moved at a speed of 1 mm / sec or more and 300 mm / sec or less.

[0146] By moving the plurality of substrates at a relatively slow speed, the organic solvent can be supplied more evenly to the plurality of substrates.

[0147] The first placing step may include placing a plurality of substrates in an empty storage area.

[0148] Compared to the case where a plurality of substrates are immersed in a liquid stored in a storage region, the humidity in the dry region is less likely to increase, and therefore deactivation of the hydrophobizing agent can be suppressed.

[0149] The substrate processing method according to the embodiment may include an immersion step, a liquid film formation step, and a passing step. In the immersion step, after the third substitution step and before the chamber cleaning step, a liquid (DIW, for example) is stored in a storage area and multiple substrates are immersed in the liquid. In the liquid film formation step, after the immersion step and before the chamber cleaning step, a liquid film of an organic solvent is formed on the surface of the liquid stored in the storage area. In the passing step, after the liquid film formation step and before the chamber cleaning step, multiple substrates are passed through the liquid film by moving them from the storage area to a drying area.

[0150] This allows the organic solvent to be supplied more evenly to the plurality of substrates.

[0151] The passing step may involve making the plurality of substrates travel back and forth between the storage area and the drying area at least once.

[0152] The organic solvent can be supplied more evenly to a plurality of substrates.

[0153] The substrate processing method according to the embodiment may include an immersion step, a liquid film formation step, and a passing step. In the immersion step, after the third substitution step and before the chamber cleaning step, a liquid (DIW, for example) is stored in a storage area and multiple substrates are immersed in the liquid. In the liquid film formation step, after the immersion step and before the chamber cleaning step, a liquid film of an organic solvent is formed on the surface of the liquid stored in the storage area. In the passing step, after the liquid film formation step and before the chamber cleaning step, the liquid stored in the storage area is discharged from the storage area to lower the position of the liquid film, and multiple substrates are passed through.

[0154] The organic solvent can be supplied more evenly to a plurality of substrates.

[0155] The disclosed embodiments should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0156] 1 chamber 2 Holding part 3 Rinse nozzle 4 Hydrophobizing agent nozzle 5. First organic solvent nozzle 6. Second organic solvent nozzle 7. Third organic solvent nozzle 8 Control Device 11 Treatment tank 12 Lid 13 Airtight Space 14 Sealing material 15 Drainage port 16 Exhaust port 32 Rinse liquid supply source 45 Steam supply system 52 Organic Solvent Sources 65 Steam supply system 72 Organic Solvent Sources 81 Control Unit 82 Memory section 100 Substrate processing apparatus 131 Storage Area 132 Dry area 451 Hydrophobizing Agent Source 452 Gas supply source 651 Organic Solvent Sources 652 Gas supply source W substrate

Claims

1. A substrate processing apparatus that collectively dries a plurality of wet substrates, a chamber having an airtight space capable of accommodating the plurality of substrates; a holder that raises and lowers the plurality of substrates between a storage region in the airtight space where a liquid is stored and a dry region in the airtight space located above the storage region; a hydrophobizing agent nozzle for supplying vapor of a hydrophobizing agent to the drying region; a first organic solvent nozzle that supplies an organic solvent liquid from the drying region toward the storage region; a second organic solvent nozzle for supplying vapor of an organic solvent to the drying region; a rinse nozzle that supplies a rinse liquid to the storage area; an exhaust port for discharging gas from the airtight space; Control unit and Equipped with The control unit a process of placing the plurality of substrates in the storage area using the holder and immersing the plurality of substrates in the liquid stored in the storage area; Thereafter, draining the liquid from the storage area; thereafter, supplying the organic solvent liquid from the first organic solvent nozzle to the plurality of substrates in a state in which the plurality of substrates are disposed in the storage area, thereby replacing the liquid adhering to the plurality of substrates with the organic solvent; thereafter, a process of supplying vapor of the hydrophobizing agent from the hydrophobizing agent nozzle to the plurality of substrates in a state in which the plurality of substrates are arranged in the drying area using the holding unit, thereby replacing the organic solvent attached to the plurality of substrates with the hydrophobizing agent; thereafter, a process of supplying the organic solvent liquid from the first organic solvent nozzle to the plurality of substrates in a state in which the plurality of substrates are arranged in the storage area using the holding unit, thereby replacing the hydrophobizing agent attached to the plurality of substrates with the organic solvent; thereafter, supplying the rinse liquid from the rinse nozzle to the storage region, and while the plurality of substrates are immersed in the rinse liquid, supplying vapor of the organic solvent from the second organic solvent nozzle to the drying region to clean the chamber; Thereafter, the plurality of substrates are moved from the storage area to the drying area using the holding unit, and vapor of the organic solvent is supplied from the second organic solvent nozzle to the airtight space, thereby replacing the rinse liquid attached to the plurality of substrates with the organic solvent. The substrate processing apparatus performs the above.

2. The substrate processing apparatus according to claim 1 , wherein the first organic solvent nozzle and the second organic solvent nozzle are disposed above the hydrophobizing agent nozzle.

3. The substrate processing apparatus according to claim 2 , wherein the second organic solvent nozzle supplies the organic solvent vapor upward or obliquely upward.

4. a connecting passage connecting a middle portion of a second organic solvent supply passage that supplies vapor of an organic solvent to the second organic solvent nozzle with a middle portion of a hydrophobizing agent supply passage that supplies a hydrophobizing agent to the hydrophobizing agent nozzle; a switching unit that switches the destination of the organic solvent vapor between the second organic solvent nozzle and the hydrophobizing agent nozzle; The substrate processing apparatus according to any one of claims 1 to 3, comprising:

5. a first vaporizer for vaporizing the hydrophobizing agent; a second vaporizer for vaporizing the organic solvent; The substrate processing apparatus according to any one of claims 1 to 4, comprising:

6. 6. The substrate processing apparatus according to claim 1, wherein the first organic solvent nozzle sprays the organic solvent liquid in a conical or fan-shaped manner.

7. The hydrophobizing agent nozzle and the second organic solvent nozzle are a cylindrical main body portion extending along the arrangement direction of the plurality of substrates; a plurality of discharge holes formed at intervals in the arrangement direction of the plurality of substrates in the main body; The substrate processing apparatus according to claim 1, further comprising:

8. 8. The substrate processing apparatus according to claim 1, wherein the exhaust port is disposed above the hydrophobizing agent nozzle.

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