Vapor phase growth equipment

Abstract

To provide a vapor growth device in which a rotational ring or a holder is suppressed from being damaged.SOLUTION: A vapor growth device of an embodiment comprises: a reaction chamber to which a processing gas is supplied, and which performs a vapor growth onto a substrate by heating the substrate while being rotated; a rotational ring 15 that has a cylinder body, includes an annular projection part 15x into an inner peripheral part, includes at least a first restraint part 15a provided to an upper or a side direction of the projection part, is provided to the inner part of the reaction chamber, and is rotated to a peripheral direction; a holder 14 that is mounted onto the projection part of the rotational ring in an annular body constructed by a material different from the rotational ring, is provided to an outer peripheral part so as to be opposite to the first restraint part, includes a second restraint part 14a that restricts an operation to a peripheral direction by being contacted to the restraint part by the rotation; a heater 24 that is provided to a lower side of the holder, and is provided to an inner side of the rotational ring; and a rotational driving mechanism that rotates the rotational ring. Then, a play is included between an inner periphery of the rotational ring and an outer periphery of the holder.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present invention relates to a vapor phase growth apparatus for supplying gas onto a substrate to form a film. [Background technology]

[0002] One method for forming high-quality semiconductor films is epitaxial growth, which involves growing a single-crystal film on a substrate such as a wafer by vapor phase epitaxy. In a vapor phase epitaxy apparatus using epitaxial growth, a wafer is placed on a holder inside a reaction chamber maintained at normal or reduced pressure.

[0003] The holder is fixed on a rotating ring that can be rotated by a rotation drive mechanism, for example. The holder fixed on the rotating ring rotates with the rotation of the rotating ring. Furthermore, the wafer placed on the holder rotates with the rotation of the holder.

[0004] While the rotating wafer is heated, process gases, such as source gases that are the raw materials for the single crystal film, are supplied from the top of the reaction chamber onto the wafer surface inside the reaction chamber. A thermal reaction of the source gas occurs on the wafer surface, forming a single crystal film on the wafer surface.

[0005] For example, if the rotating ring and the holder are fixed in close contact with each other, stress may act due to thermal expansion or contraction of the rotating ring or the holder, which may result in damage to the rotating ring or the holder. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-116356 Summary of the Invention [Problem to be solved by the invention]

[0007] An object of the present invention is to provide a vapor phase growth apparatus in which damage to the rotating ring or holder is suppressed. [Means for solving the problem]

[0008] A vapor phase growth apparatus according to one embodiment of the present invention comprises a reaction chamber into which a process gas is supplied and which rotates and heats a substrate to perform vapor phase growth on the substrate; a cylindrical rotating ring disposed inside the reaction chamber and having an annular protrusion on its inner periphery and at least one first restraint portion disposed above or to the side of the protrusion, the rotating ring rotating in a circumferential direction; a holder for placing a substrate thereon, the holder having an annular body made of a different material from the rotating ring, placed on the protrusion of the rotating ring, disposed on its outer periphery facing the first restraint portion, and having a second restraint portion which restrains the circumferential movement by abutting against the first restraint portion upon rotation; a heater disposed below the holder and inside the rotating ring; and a rotation drive mechanism for rotating the rotating ring, wherein there is play between the inner periphery of the rotating ring and the outer periphery of the holder.

[0009] In the vapor phase growth apparatus of the above aspect, the play is preferably 0.3 mm or more and 2 mm or less.

[0010] In the vapor phase growth apparatus of the above aspect, it is preferable that the inner peripheral edge of the first restraint portion and the outer peripheral edge of the second restraint portion are linear.

[0011] In the vapor phase growth apparatus of the above aspect, it is preferable that the first restraint portion is a recess provided on the inner circumferential portion or upper portion of the rotating ring, and the second restraint portion is a protrusion.

[0012] In the vapor phase growth apparatus of the above aspect, it is preferable that the first restraining portion is a convex portion and the second restraining portion is a concave portion.

[0013] In the vapor phase growth apparatus of the above aspect, it is preferable that the first restraint portion and the second restraint portion are each provided at three or more locations.

[0014] In the vapor phase growth apparatus of the above aspect, it is preferable that no shield be provided between the rotation center of the holder and the heater. [Effects of the Invention]

[0015] According to the present invention, it is possible to provide a vapor phase growth apparatus in which damage to the rotating ring or holder is suppressed. [Brief explanation of the drawings]

[0016] [Figure 1] FIG. 1 is a schematic cross-sectional view of a vapor phase growth apparatus according to an embodiment. [Figure 2] FIG. 2 is a schematic diagram of a rotating ring according to an embodiment. [Figure 3] FIG. 2 is a schematic diagram of a holder according to an embodiment. [Figure 4] 3A and 3B are schematic diagrams of a rotating ring and a holder according to an embodiment. [Figure 5] FIG. 10 is a schematic diagram of a rotating ring and a holder according to a first modified example of the embodiment. [Figure 6] FIG. 10 is a schematic diagram of a rotating ring and a holder according to a second modified example of the embodiment. [Figure 7] FIG. 10 is a schematic diagram of a rotating ring and a holder according to a third modified example of the embodiment. [Figure 8] FIG. 10 is a schematic diagram of a rotating ring and a holder according to a fourth modified example of the embodiment. [Figure 9] FIG. 10 is a schematic view of a rotating ring and a holder according to a fifth modified example of the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0017] Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

[0018] In this specification, the same or similar components may be denoted by the same reference numerals.

[0019] In this specification, the direction of gravity when the vapor deposition apparatus is installed so that film formation is possible is defined as "down," and the opposite direction is defined as "up." Therefore, "lower" means a position in the direction of gravity relative to a reference, and "lower" means the direction of gravity relative to a reference. "Upper" means a position in the opposite direction to the direction of gravity relative to a reference, and "upper" means the opposite direction to the direction of gravity relative to a reference. Furthermore, "vertical direction" means the direction of gravity.

[0020] In this specification, the term "process gas" is a general term for gases used to form a film, and is a concept that includes, for example, source gas, carrier gas, dilution gas, and the like.

[0021] The vapor phase growth apparatus of the embodiment comprises a reaction chamber into which a process gas is supplied and into which vapor phase growth is performed on the substrate by heating the substrate while rotating it; a cylindrical rotating ring disposed inside the reaction chamber and having an annular protrusion on its inner periphery and at least one first restraint portion disposed above or to the side of the protrusion, the rotating ring rotating in a circumferential direction; a ring-shaped body made of a different material from the rotating ring, placed on the protrusion of the rotating ring, disposed on the outer periphery opposite the first restraint portion, and having a second restraint portion which restrains circumferential movement by abutting against the first restraint portion upon rotation; a holder on which the substrate is placed; a heater disposed below the holder and inside the rotating ring; and a rotation drive mechanism which rotates the rotating ring, with play between the inner periphery of the rotating ring and the outer periphery of the holder.

[0022] 1 is a schematic cross-sectional view of a vapor phase growth apparatus according to an embodiment of the present invention, which is, for example, a single-wafer epitaxial growth apparatus using metal-organic chemical vapor deposition (MOCVD).

[0023] The vapor phase growth apparatus of the embodiment includes a reaction chamber 10, a first gas supply path 11, a second gas supply path 12, and a third gas supply path 13. The reaction chamber 10 includes a holder 14, a rotating ring 15, a rotating table 16, a rotating shaft 18, a rotation drive mechanism 20, a shower plate 22, a heater 24, a reflector 30, a support column 34, a fixed table 36, a fixed shaft 38, and a gas exhaust port 40. The rotating ring 15 has a protrusion 15x.

[0024] A first gas supply line 11, a second gas supply line 12, and a third gas supply line 13 supply process gas to the reaction chamber 10.

[0025] The first gas supply line 11 supplies, for example, a first process gas containing a Group III element organic metal and a carrier gas to the reaction chamber 10. The first process gas is a gas containing a Group III element used when forming a Group III-V semiconductor film on the wafer W.

[0026] Examples of Group III elements include gallium (Ga), aluminum (Al), and indium (In). Examples of organic metals include trimethylgallium (TMG), trimethylaluminum (TMA), and trimethylindium (TMI).

[0027] The second gas supply line 12 supplies a second process gas containing, for example, ammonia (NH3) to the reaction chamber 10. The second process gas is a gas containing a group V element used when forming a III-V group semiconductor film on a wafer. The group V element is, for example, nitrogen (N).

[0028] The third gas supply line 13 supplies, for example, a dilution gas that dilutes the first process gas and the second process gas to the reaction chamber 10. By diluting the first process gas and the second process gas with the dilution gas, the concentrations of the group III elements and group V elements supplied to the reaction chamber 10 are adjusted. The dilution gas is, for example, an inert gas. The dilution gas is, for example, hydrogen gas, nitrogen gas, argon gas, or a mixture of the above gases.

[0029] The reaction chamber 10 has a cylindrical wall surface 17 made of, for example, stainless steel. A shower plate 22 is provided at the top of the reaction chamber 10. The shower plate 22 has a plurality of gas outlet holes. A process gas is supplied into the reaction chamber 10 through the plurality of gas outlet holes.

[0030] The rotating ring 15 is provided inside the reaction chamber 10. The rotating ring 15 is cylindrical. The rotating ring 15 has an annular protrusion 15x on its inner periphery.

[0031] The rotating ring 15 is made of a first material, for example, graphite coated with silicon carbide.

[0032] The rotating base 16 is provided below the rotating ring 15. The rotating ring 15 is fixed to the rotating base 16.

[0033] The rotation shaft 18 is provided below the rotation table 16. The rotation table 16 is fixed to the rotation shaft 18.

[0034] The rotary drive mechanism 20 rotates the rotary shaft 18. By rotating the rotary shaft 18, it is possible to rotate the rotary ring 15. The rotary drive mechanism 20 is composed of, for example, a motor and a bearing.

[0035] The holder 14 is provided inside the reaction chamber 10. The holder 14 is placed on a rotating ring 15. The holder 14 is placed on a protrusion 15x of the rotating ring 15. A wafer W, which is an example of a substrate, can be placed on the holder 14.

[0036] The holder 14 is annular and has an opening in the center.

[0037] By rotating the rotary ring 15, it is possible to rotate the wafer W placed on the holder 14. The wafer W can be rotated at a rotation speed of, for example, 50 rpm or more and 3000 rpm or less.

[0038] The holder 14 is made of a second material. The second material is different from the first material that forms the rotating ring 15. The second material is, for example, ceramics. The second material is, for example, silicon carbide, silicon nitride, boron nitride, or alumina. The second material is, for example, sintered silicon carbide.

[0039] The heater 24 is provided below the holder 14. The heater 24 is provided inside the rotating ring 15.

[0040] The heater 24 heats the wafer W placed on the holder 14. The heater 24 has, for example, a disk shape.

[0041] The reflector 30 is provided below the heater 24. The heater 24 is provided between the reflector 30 and the holder 14.

[0042] The reflector 30 reflects the heat radiated downward from the heater 24, thereby improving the heating efficiency of the wafer W. In addition, the reflector 30 prevents members below the reflector 30 from being heated.

[0043] The reflector 30 is fixed to a fixed base 36 by, for example, a plurality of support columns 34. The fixed base 36 is supported by, for example, a fixed shaft 38.

[0044] A push-up pin (not shown) is provided inside the rotating ring 15 in order to attach and detach the wafer W from the holder 14. The push-up pin penetrates, for example, the reflector 30 and the heater 24.

[0045] The gas exhaust port 40 is provided at the bottom of the reaction chamber 10. The gas exhaust port 40 exhausts excess reaction products produced after the source gas reacts on the surface of the wafer W and excess process gas to the outside of the reaction chamber 10.

[0046] Furthermore, a wafer inlet / outlet and a gate valve (not shown) are provided on a wall surface 17 of the reaction chamber 10. The wafer inlet / outlet and the gate valve enable the wafer W to be loaded into and unloaded from the reaction chamber 10.

[0047] Figures 2(a) and 2(b) are schematic diagrams of a rotating ring according to an embodiment. Figure 2(a) is a top view, and Figure 2(b) is a cross-sectional view. Figure 2(b) is a cross-sectional view taken along line AA' in Figure 2(a).

[0048] The rotatable ring 15 has an annular protrusion 15x on its inner periphery. The rotatable ring 15 has three first restraint portions 15a provided on its inner periphery above the protrusion 15x. The inner periphery ends of the rotatable ring 15 at the first restraint portions 15a are linear.

[0049] The inner diameter of the region of the rotatable ring 15 that does not include the first restraint portion 15a is a first length L1. The rotatable ring 15 has a center of rotation C1.

[0050] Figures 3(a) and 3(b) are schematic diagrams of the holder of the embodiment. Figure 3(a) is a top view, and Figure 3(b) is a cross-sectional view. Figure 3(b) is a cross-sectional view taken along line BB' in Figure 3(a).

[0051] The holder 14 has three second restraining portions 14a provided on the outer periphery thereof. At the second restraining portions 14a, the outer periphery of the holder 14 is linear.

[0052] The holder 14 has an annular mounting portion 14x on its inner periphery. The thickness of the mounting portion 14x is thinner than the thickness of the outer periphery of the holder 14. The wafer W is mounted on the mounting portion 14x.

[0053] The outer diameter of the area of ​​the holder 14 that does not include the second restraining portion 14a is a second length L2. The holder 14 has a rotation center C2.

[0054] Figures 4(a) and 4(b) are schematic diagrams of the rotating ring and holder of the embodiment. Figure 4(a) is a top view, and Figure 4(b) is a cross-sectional view. Figure 4(b) is a cross-section taken along CC' in Figure 4(a).

[0055] The holder 14 is placed on the rotating ring 15. The holder 14 is placed on the protrusions 15x of the rotating ring 15. Figures 4(a) and 4(b) show a state in which the holder 14 is placed so that the rotation center C1 of the rotating ring 15 and the rotation center C2 of the holder 14 coincide with each other. There is play between the inner circumference of the rotating ring 15 and the outer circumference of the holder 14.

[0056] The difference between the first length L1 of the rotatable ring 15 and the second length L2 of the holder 14 is 0.3 mm or more and 2 mm or less. The difference between the first length L1 of the rotatable ring 15 and the second length L2 of the holder 14 is an example of play between the inner circumference of the rotatable ring 15 and the outer circumference of the holder 14.

[0057] When the holder 14 is placed so that the rotation center C1 of the rotating ring 15 and the rotation center C2 of the holder 14 coincide with each other, the gap between the inner circumference of the rotating ring 15 and the outer circumference of the holder 14 (d in Figures 4(a) and 4(b)) is 0.15 mm or more and 1 mm or less.

[0058] The second restraining portion 14a faces the first restraining portion 15a. When the holder 14 rotates in the circumferential direction relative to the rotating ring 15, the second restraining portion 14a comes into contact with the first restraining portion 15a, thereby restraining the movement of the holder 14 in the circumferential direction.

[0059] For example, as shown in FIG. 4(b), there is no obstruction between the rotation center C2 of the holder 14 and the heater 24, and only the gas introduced into the rotating ring 15 exists. For example, as shown in FIG. 4(b), only the gas exists on the line segment (Lx in FIG. 4(b)) that connects the rotation center C2 of the holder 14 and the heater 24 and is perpendicular to the top surface of the holder 14. The gas is, for example, an inert gas.

[0060] In other words, there is no solid member acting as a shield between the rotation center C2 of the holder 14 and the heater 24. There is no solid member on the line segment Lx that connects the rotation center C2 of the holder 14 and the heater 24 and is perpendicular to the top surface of the holder 14. For example, there is no susceptor member between the rotation center C2 of the holder 14 and the heater 24. As a result, the wafer W placed on the holder is heated by direct radiation from the heater 24.

[0061] Next, an example of a vapor phase growth method using the vapor phase growth apparatus of the embodiment will be described.

[0062] Hereinafter, an example will be described in which a laminated film of a gallium nitride film (GaN film) and an aluminum gallium nitride film (AlGaN film) is formed on a silicon wafer W. The laminated film is used, for example, in a HEMT (High Electron Mobility Transistor). Note that the wafer W is not limited to silicon.

[0063] First, the wafer W is carried into the reaction chamber 10. Next, the wafer W is placed on the holder 14.

[0064] Next, while the wafer W is rotated by the rotation drive mechanism 20, the wafer W is heated by the heater 24 provided below the holder 14 to a temperature of, for example, 1000° C. or higher and 1100° C. or lower.

[0065] Next, the temperature of the wafer W is set to, for example, 1050°C, and a buffer layer of AlN (aluminum nitride) and AlGaN (aluminum gallium nitride) is formed on the wafer using TMA, TMG, and ammonia. Next, a GaN film and an AlGaN film are formed on the buffer layer.

[0066] When forming a GaN film, the temperature of the wafer W is set to, for example, 900°C, and TMG using, for example, nitrogen gas as a carrier gas is supplied to the reaction chamber 10 from the first gas supply path 11. Also, for example, ammonia is supplied to the reaction chamber 10 from the second gas supply path 12. Also, for example, nitrogen gas is supplied as a diluent gas to the reaction chamber 10 from the third gas supply path 13.

[0067] When forming an AlGaN film, the temperature of the wafer W is set to, for example, 900°C, and a mixed gas of TMG and TMA, for example, with nitrogen gas as a carrier gas, is supplied to the reaction chamber 10 through the first gas supply path 11. Ammonia, for example, is supplied to the reaction chamber 10 through the second gas supply path 12. Nitrogen gas, for example, is supplied as a diluent gas to the reaction chamber 10 through the third gas supply path 13.

[0068] After the laminated film is formed, the heating by the heater 24 is stopped to lower the temperature of the wafer W. Thereafter, the wafer W is carried out from the reaction chamber 10.

[0069] Next, the operation and effects of the vapor phase growth apparatus of the embodiment will be described.

[0070] In a vapor phase growth apparatus, a wafer is placed on a holder in a reaction chamber. The holder is fixed, for example, on a rotating ring that can be rotated by a rotation drive mechanism. The holder fixed to the rotating ring rotates in accordance with the rotation of the rotating ring. The wafer placed on the holder also rotates in accordance with the rotation of the holder.

[0071] While the rotating wafer is heated, process gases, such as source gases that are the raw materials for the film, are supplied from the top of the reaction chamber onto the wafer surface in the reaction chamber. A thermal reaction of the source gas occurs on the wafer surface, forming a film on the wafer surface.

[0072] For example, if the rotating ring and the holder are fixed in close contact, stress may be applied due to thermal expansion or contraction of the rotating ring or the holder, which may result in damage to the rotating ring or the holder. In particular, if the material forming the rotating ring and the material forming the holder are different, the difference in the thermal expansion coefficient between the material forming the rotating ring and the material forming the holder may result in large stress, making the rotating ring or the holder more susceptible to damage.

[0073] In the vapor phase growth apparatus of the embodiment, the first material forming the rotating ring 15 is different from the second material forming the holder 14. Therefore, compared to when the rotating ring 15 and the holder 14 are formed from the same material, there is a risk that the rotating ring 15 or the holder 14 may be more susceptible to damage due to stress.

[0074] In the vapor phase growth apparatus of the embodiment, the inner diameter of the region of the rotatable ring 15 that does not include the first constraint portion 15a is a first length L1. In addition, in the vapor phase growth apparatus of the embodiment, the outer diameter of the region of the holder 14 that does not include the second constraint portion 14a is a second length L2. The difference between the first length L1 of the rotatable ring 15 and the second length L2 of the holder 14 is 0.3 mm or more and 2 mm or less. The difference between the first length L1 of the rotatable ring 15 and the second length L2 of the holder 14 is the play between the inner circumference of the rotatable ring 15 and the outer circumference of the holder 14.

[0075] By setting the difference between the first length L1 and the second length L2 to 0.3 mm or more, stress applied between the rotatable ring 15 and the holder 14 is suppressed even if thermal expansion or thermal contraction occurs in the rotatable ring 15 or the holder 14. Therefore, damage to the rotatable ring 15 or the holder 14 is suppressed.

[0076] By making the difference between the first length L1 and the second length L2 0.3 mm or more, when the holder 14 is placed so that the rotation center C1 of the rotating ring 15 and the rotation center C2 of the holder 14 coincide with each other, the gap between the inner circumference of the rotating ring 15 and the outer circumference of the holder 14 (d in Figures 4(a) and 4(b)) becomes 0.15 mm or more.

[0077] From the viewpoint of preventing damage to the rotatable ring 15 or the holder 14, the difference between the first length L1 and the second length L2 is preferably 0.5 mm or more, and more preferably 0.8 mm or more.

[0078] Furthermore, by setting the difference between the first length L1 and the second length L2 to 2 mm or less, it is possible to reduce the amount of misalignment between the rotation center C1 of the rotating ring 15 and the rotation center C2 of the holder 14. Reducing the amount of misalignment between the rotation center C1 of the rotating ring 15 and the rotation center C2 of the holder 14 improves, for example, the uniformity of the film thickness and chemical composition of the single crystal film formed on the wafer W.

[0079] From the viewpoint of reducing the amount of misalignment between the rotation center C1 of the rotating ring 15 and the rotation center C2 of the holder 14, it is preferable that the difference between the first length L1 and the second length L2 be 1.6 mm or less, and more preferably 1.2 mm or less.

[0080] If the gap between the inner periphery of the rotating ring 15 and the outer periphery of the holder 14 becomes large, there is a risk that the holder 14 will rotate in the circumferential direction relative to the rotating ring 15. The position of the notch or orientation flat of the wafer W placed on the holder 14 is fixed relative to the holder 14. If the holder 14 moves in the circumferential direction relative to the rotating ring 15, the position of the notch or orientation flat will shift in the circumferential direction. If the position of the notch or orientation flat shifts in the circumferential direction, there is a risk that problems will occur in processes after film formation, for example.

[0081] In the vapor phase growth apparatus of the embodiment, the rotating ring 15 has a first constraining portion 15a, and the holder 14 has a second constraining portion 14a. The holder 14 is placed on the rotating ring 15 so that the first constraining portion 15a and the second constraining portion 14a face each other.

[0082] Therefore, when the holder 14 rotates in the circumferential direction relative to the rotatable ring 15, the second restraining portion 14a comes into contact with the first restraining portion 15a, thereby restraining the circumferential movement of the holder 14. This, for example, prevents problems from occurring in processes after the film is formed. Also, for example, damage to the rotatable ring 15 or the holder 14 while the rotatable ring 15 is rotating is prevented. Also, for example, detachment of the holder 14 from the rotatable ring 15 while the rotatable ring 15 is rotating is prevented.

[0083] (First Modification) The first modified example of the vapor phase growth apparatus of the embodiment differs from the vapor phase growth apparatus of the embodiment in that the holder has an annular convex region on the lower part of the holder.

[0084] Figures 5(a) and 5(b) are schematic diagrams of a rotating ring and a holder according to a first modified example of the embodiment. Figure 5(a) is a top view, and Figure 5(b) is a cross-sectional view. Figure 5(b) is a cross-sectional view taken along line DD' of Figure 5(a).

[0085] The holder 14 has an annular convex region 14y on the lower part of the holder 14. The convex region 14y is provided inside the protrusion 15x of the rotatable ring 15.

[0086] (Second Modification) The second modified example of the vapor phase growth apparatus of the embodiment differs from the first modified example of the embodiment in that the first restraining portion is provided on the side of the protrusion.

[0087] Figures 6(a) and 6(b) are schematic diagrams of a rotating ring and a holder according to a second modified example of the embodiment. Figure 6(a) is a top view, and Figure 6(b) is a cross-sectional view. Figure 6(b) is a cross-sectional view taken along the line DD' in Figure 6(a).

[0088] The holder 14 has an annular convex region 14y on the lower part of the holder 14. The convex region 14y is provided inside the protrusion 15x of the rotatable ring 15.

[0089] The holder 14 has three second restraint portions 14a provided on the outer periphery of the convex region 14y. The second restraint portions 14a are provided on the sides of the convex region 14y. The outer periphery of the convex region 14y is linear at the second restraint portions 14a.

[0090] The rotatable ring 15 has an annular protrusion 15x on its inner periphery, and the upper end surface of the rotatable ring 15 is flat.

[0091] The rotating ring 15 has three first restraining portions 15a provided on the inner circumferential portion on the sides of the protrusions 15x. The first restraining portions 15a have linear inner circumferential ends of the rotating ring 15. The first restraining portions 15a face the second restraining portions 14a of the holder 14.

[0092] Although the example has been described in which the first restraint portions 15a and the second restraint portions 14a are provided in three locations each, the number of first restraint portions 15a and second restraint portions 14a is not limited to three. The number of first restraint portions 15a and second restraint portions 14a may be, for example, four or more locations each. For example, when the first restraint portions 15a and the second restraint portions 14a are provided in four locations, the line-symmetrical shape makes processing, shape measurement, and shape confirmation easy.

[0093] (Third Modification) The third modification of the vapor phase growth apparatus of the embodiment differs from the embodiment in that the first restraining portion is a recess and the second restraining portion is a protrusion.

[0094] Figures 7(a) and 7(b) are schematic diagrams of a rotating ring and a holder according to a third modified example of the embodiment. Figure 7(a) is a top view, and Figure 7(b) is a cross-sectional view. Figure 7(b) is a cross-section taken along CC' in Figure 7(a).

[0095] The first and second restraint portions 15a, 14a are not limited to being linear. As shown in Figures 7(a) and 7(b), the first restraint portion 15a may be a recess provided on the inner periphery of the rotatable ring 15, and the second restraint portion 14a may be a protrusion that fits into the first restraint portion 15a.

[0096] (Fourth Modification) The fourth modification of the vapor phase growth apparatus of the embodiment differs from the embodiment in that the first restraining portion is a recess and the second restraining portion is a protrusion.

[0097] 8(a) and 8(b) are schematic diagrams of a rotating ring and a holder according to a fourth modified example of the embodiment. Fig. 8(a) is a top view, and Fig. 8(b) is a cross-sectional view. Fig. 8(b) is a cross-section taken along CC' in Fig. 8(a).

[0098] The first and second restraint portions 15a and 14a are not limited to being linear. As shown in Figures 8(a) and 8(b), the first restraint portion 15a may be a recess provided on the upper part of the rotatable ring 15, and the second restraint portion 14a may be a protrusion that fits into the first restraint portion 15a.

[0099] (Fifth Modification) The fifth modification of the vapor phase growth apparatus of the embodiment differs from the embodiment in that the first restraining portion is a convex portion and the second restraining portion is a concave portion.

[0100] 9(a) and 9(b) are schematic diagrams of a rotating ring and a holder according to a fifth modified example of the embodiment. Fig. 9(a) is a top view, and Fig. 9(b) is a cross-sectional view. Fig. 9(b) is a cross-section taken along CC' in Fig. 9(a).

[0101] As shown in Figures 9(a) and 9(b), the first restraint portion 15a may be a convex portion provided on the inner peripheral portion of the rotating ring 15, and the second restraint portion 14a may be a concave portion that fits into the first restraint portion 15a.

[0102] The shapes of the convex and concave portions in the third to fifth modified examples are not particularly limited, and may be formed into any suitable shape, such as a rectangular, triangular, or arc shape.

[0103] As described above, according to the embodiment and the modified example, it is possible to realize a vapor phase growth apparatus in which damage to the rotating ring or the holder is suppressed.

[0104] The embodiments of the present invention have been described above with reference to specific examples. The above-described embodiments are merely examples and do not limit the present invention. Furthermore, the components of each embodiment may be combined as appropriate.

[0105] In the embodiment, an example has been described in which a stacked film of a gallium nitride film and an aluminum gallium nitride film is epitaxially grown, but the present invention can also be applied to the formation of single crystal films of other III-V group nitride semiconductors, such as aluminum nitride (AlN) and indium gallium nitride (InGaN). The present invention can also be applied to III-V group semiconductors such as GaAs. Furthermore, the present invention can also be applied to the formation of other films.

[0106] Furthermore, although the embodiments have been described using an example in which a laminated film used in a HEMT is formed, the present invention can also be applied to the formation of a laminated film used in the light-emitting layer of a Light Emitting Diode (LED), for example.

[0107] In the embodiment, the process gases are mixed inside the shower plate, but the process gases may be mixed before entering the shower plate, or may be separated from each other until they are ejected from the shower plate into the reaction chamber.

[0108] In the embodiments, the description of the device configuration and other parts not directly necessary for the explanation of the present invention has been omitted, but the required device configuration and other parts can be selected and used as appropriate. In addition, all split reflectors, reflector units, and vapor phase growth devices that include the elements of the present invention and that can be appropriately modified by those skilled in the art are included in the scope of the present invention. The scope of the present invention is defined by the claims and their equivalents. [Explanation of symbols]

[0109] 10 Reaction chamber 14 Holder 14a Second restraint 15 Rotating Ring 15a First restraint section 15x protrusion 20 Rotation drive mechanism 24 Heater L1 First length L2 Second length W wafer (substrate)

Claims

1. a reaction chamber into which a process gas is supplied and into which a substrate is rotated and heated to perform vapor phase growth on the substrate; a rotating ring that is a cylindrical body and has an annular protrusion on an inner periphery thereof and at least one first restraint portion provided above or to a side of the protrusion, the rotating ring being provided inside the reaction chamber and rotating in a circumferential direction; a holder for placing a substrate thereon, the holder being an annular body made of a material different from that of the rotating ring, the holder being placed on the protrusion of the rotating ring, the holder having a second constraint portion provided on the outer periphery facing the first constraint portion, the second constraint portion coming into contact with the first constraint portion by rotation to constrain movement in the circumferential direction; a heater provided below the holder and inside the rotating ring; a rotation drive mechanism that rotates the rotating ring; Equipped with The vapor phase growth apparatus has a play between the inner periphery of the rotating ring and the outer periphery of the holder.

2. 2. The vapor phase growth apparatus according to claim 1, wherein the play is 0.3 mm or more and 2 mm or less.

3. 3. The vapor phase growth apparatus according to claim 1, wherein the inner peripheral edge of the first restraint portion and the outer peripheral edge of the second restraint portion are linear.

4. 3. The vapor phase growth apparatus according to claim 1, wherein the first restraining portion is a recess provided on the inner circumferential portion or the upper portion of the rotating ring, and the second restraining portion is a protrusion.

5. 3. The vapor phase growth apparatus according to claim 1, wherein the first restraining portion is a convex portion, and the second restraining portion is a concave portion.

6. 3. The vapor phase growth apparatus according to claim 1, wherein the first restraining portion and the second restraining portion are each provided at three or more locations.

7. 3. The vapor phase growth apparatus according to claim 1, wherein there is no shield between the rotation center of the holder and the heater.

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