Optoelectronic module and method for manufacturing the same

Abstract

An optoelectronic module and a method for manufacturing the optoelectronic module are provided. An optoelectronic module (1) is disclosed, comprising a first semiconductor component (11) on a mounting side (21A) of a first carrier (21) and a second semiconductor component (12) and a third semiconductor component (13) on a mounting side (22A) of a second carrier (22). The semiconductor components (11, 12, 13) are configured to emit electromagnetic radiation of different dominant wavelengths in a common emission direction (ED). The mounting side (21A) of the first carrier (21) faces the mounting side (22A) of the second carrier (22). Further, a method for manufacturing the optoelectronic module (1) is disclosed.

Description

[Technical Field]

[0001] An optoelectronic module and a method for manufacturing the optoelectronic module are disclosed. The optoelectronic module is configured to emit electromagnetic radiation. Summary of the Invention [Problem to be solved by the invention]

[0002] One of the problems to be solved is to specify an optoelectronic module that has a particularly compact design.

[0003] A further problem to be solved is to identify a method for producing an optoelectronic module that has a particularly compact design. [Means for solving the problem]

[0004] These problems are solved by the devices and methods according to the independent claims. Advantageous and further embodiments of the devices and methods are the subject of the dependent claims and will become more apparent from the following description and figures.

[0005] According to at least one embodiment, the optoelectronic module comprises a first semiconductor component on a mounting side of a first carrier and a second and a third semiconductor component on a mounting side of a second carrier. The mounting side of the carrier is, for example, the side on which the semiconductor components can be mounted. In particular, the mounting sides each comprise a plurality of solder pads for mounting the semiconductor components. The first and / or second carrier is, in particular, formed of a plurality of layers. Preferably, the carrier is mechanically self-supporting. The semiconductor components are, for example, configured as light-emitting diodes or laser diodes. In particular, the semiconductor components are designed as single-ridge lasers each having one emitter region.

[0006] According to at least one embodiment of the optoelectronic module, the semiconductor components are configured to emit electromagnetic radiation of different dominant wavelengths in a common emission direction. In particular, the semiconductor components are designed as edge-emitting light-emitting diodes with one emission side each. In other words, the semiconductor components have, in particular, an output coupling facet on one side each. For example, the semiconductor components are each formed as a monolithic component.

[0007] Hereinafter, dominant wavelength refers to the wavelength at which the emission spectrum has a global intensity maximum. The first semiconductor component preferably emits electromagnetic radiation with at least a first dominant wavelength in the red spectral region. The second semiconductor component preferably emits electromagnetic radiation with at least a second dominant wavelength in the green spectral region. The third semiconductor component preferably emits electromagnetic radiation with at least a third dominant wavelength in the blue spectral region.

[0008] Preferably, the emission directions of all semiconductor elements are aligned parallel to one another, in particular the emission directions of the semiconductor components are aligned parallel to the mounting side of the carrier.

[0009] According to at least one embodiment of the optoelectronic module, the mounting side of the first carrier faces the mounting side of the second carrier, in particular, the mounting sides face each other such that the main extension surface of the first carrier is aligned parallel to the main extension surface of the second carrier.

[0010] According to at least one embodiment, the optoelectronic module comprises: a first semiconductor component on the mounting side of the first carrier; a second semiconductor component and a third semiconductor component are provided on the mounting side of the second carrier; the semiconductor components are configured to emit electromagnetic radiation of different dominant wavelengths in a common emission direction; The mounting side of the first carrier faces the mounting side of the second carrier.

[0011] The optoelectronic module of the present disclosure is based, inter alia, on the consideration that various applications require very compact light sources. For example, compact light sources are advantageous for projecting multicolor image content onto portable devices. Conventional light sources often occupy a large installation space and emit poorly directed electromagnetic radiation over a wide area. Therefore, large and heavy optical systems are also required, which can further increase the size of the portable light source.

[0012] The disclosed optoelectronic module utilizes, inter alia, the concept of arranging multiple semiconductor components on the mounting sides of different carriers and then orienting the carriers so that the mounting sides face each other. This results in a particularly compact optoelectronic module. The emission of electromagnetic radiation can advantageously be directed to a small area. The downstream optics can therefore be very small and compact. This arrangement of the semiconductor components also allows for the use of short control lines, which facilitates high-frequency control of the semiconductor components.

[0013] In at least one embodiment of the optoelectronic module, a frame body is disposed between the first carrier and the second carrier. Specifically, the frame body serves as a mechanical spacer between the first carrier and the second carrier. The frame body can also protect the semiconductor components from external environmental influences.

[0014] According to at least one embodiment of the optoelectronic module, the frame body is made of an electrically insulating material and includes a plurality of electrical connection lines. For example, the frame body is made of ceramic or polymer. The connection lines are provided to supply operating current to the semiconductor components. For example, the connection lines are made of metal.

[0015] According to at least one embodiment of the optoelectronic module, the connecting lines are arranged on the inside of the frame body. Hereinafter, the inside of the frame body refers to the side of the frame body facing the semiconductor component. Advantageously, the connecting lines on the inside of the frame body are particularly well protected from external environmental influences. Furthermore, the manufacturing of the connecting lines on the inside can be simplified.

[0016] According to at least one embodiment of the optoelectronic module, the connecting wires are at least partially embedded in the frame body, which protects the connecting wires from external environmental influences, prevents contact between the connecting wires and other components, and advantageously reduces the risk of electrical short circuits.

[0017] According to at least one embodiment of the optoelectronic module, a connecting material is disposed between the frame body and the first carrier and between the frame body and the second carrier. In particular, the connecting material creates an airtight connection between the frame body and the first and second carriers. For example, the connecting material is formed of a solder material, in particular a gold-tin solder.

[0018] According to at least one embodiment of the optoelectronic module, the first carrier comprises a via leading to an upper side opposite the first semiconductor component. In particular, the via has a recess through the first carrier. The recess preferably extends completely through the first carrier. For example, the recess of the via is partially or completely filled with a conductive material. In particular, the recess is filled with a metal or metal alloy. Advantageously, the via allows electrical contact of the first semiconductor component from the upper side of the first carrier.

[0019] According to at least one embodiment of the optoelectronic module, the top side of the first carrier is electrically conductively connected to the first carrier via a bonding wire, which is made of, for example, a metal or a metal alloy, and which is advantageously easy to manufacture and can, for example, replace a via in the first carrier.

[0020] In accordance with at least one embodiment of the optoelectronic module, at least two bonding wires are assigned to each via. Increasing the number of bonding wires per via allows for improved high-frequency operation of the electrical connection. Preferably, at least three bonding wires are assigned to each via.

[0021] According to at least one embodiment of the optoelectronic module, the semiconductor components have multiple emitter regions. In particular, all semiconductor components have multiple emitter regions. For example, the semiconductor components have at least two, preferably at least four, and particularly preferably at least 12, emitter regions. In particular, each emitter region emits electromagnetic radiation having the same dominant wavelength. Each semiconductor component can be configured, for example, as a double-ridge laser, each having two emitter regions. For example, the dominant wavelengths of the emitter regions of the semiconductor components differ by at least 1 nm, preferably at least 2 nm, and particularly at least 5 nm. A slight difference in dominant wavelength can advantageously reduce or avoid undesirable interference effects.

[0022] In accordance with at least one embodiment of the optoelectronic module, the emitter regions of the semiconductor components are controllable independently of one another, which allows, for example, a particularly large dynamic range of the intensity of the emitted electromagnetic radiation.

[0023] In at least one embodiment of the optoelectronic module, the emitter regions of all semiconductor components are arranged opposite one another. In particular, all emitter regions of the optoelectronic module are arranged in an ellipse with a minor axis length of at most 200 μm, preferably at most 100 μm, and particularly preferably at most 60 μm, and a major axis length of at most 1000 μm, preferably at most 500 μm, and particularly preferably at most 300 μm. This compact arrangement of the emitter regions allows for the use of particularly compact downstream optical elements.

[0024] In at least one embodiment of the optoelectronic module, the distance between the emitter regions of one semiconductor component is at most 10 μm. The small distance between the emitter regions of one semiconductor component contributes to a compact design of the optoelectronic module.

[0025] In at least one embodiment of the optoelectronic module, the lateral distance from the second semiconductor component to the third semiconductor component is at most 30 μm, preferably at most 10 μm. The lateral distance refers to the distance between the second and third semiconductor components in a direction parallel to the mounting side of the second carrier. A small lateral distance allows for a compact design of the optoelectronic module.

[0026] According to at least one embodiment of the optoelectronic module, the first semiconductor component is located at a maximum vertical distance of 50 μm, preferably at a maximum distance of 30 μm, from the second and third semiconductor components. The vertical distance refers to the distance across the mounting side of the second carrier, in particular perpendicular to the mounting side of the second carrier. The vertical distance is set, in particular, by a vertical extension of the frame body and the semiconductor components.

[0027] According to at least one embodiment of the optoelectronic module, the first carrier and / or the second carrier are made of an electrically insulating material, in particular, the first carrier and / or the second carrier are made of ceramic, silicon, or glass.

[0028] According to at least one embodiment of the optoelectronic module, the second carrier has vias leading to a contact side opposite the mounting side. The vias of the second carrier correspond in particular to the vias of the first carrier. The vias of the second carrier allow solder mounting of the optoelectronic module only from the contact side. This allows, for example, for easier mounting of the optoelectronic module on a circuit board.

[0029] According to at least one embodiment of the optoelectronic module, an optical element is arranged downstream of the semiconductor component in the emission direction of the semiconductor component. The optical element is, in particular, a collimating lens or a glass plate for protecting the semiconductor component. The optical element is, in particular, transparent to the electromagnetic radiation generated by the optoelectronic module during operation.

[0030] According to at least one embodiment of the optoelectronic module, an encapsulation compound is disposed between the semiconductor component and the optical element. The encapsulation compound protects the semiconductor component from external environmental influences, for example, on the emission side of the semiconductor component. Advantageously, a sealed frame body can be omitted. For example, the encapsulation compound is formed of a radiation-transmitting polysiloxane.

[0031] According to at least one embodiment of the optoelectronic module, a fourth semiconductor component is disposed on the first carrier. The fourth semiconductor component preferably has a plurality of fourth emitter regions. In particular, the fourth semiconductor component has the same optical properties as the second semiconductor component. Alternatively, the fourth semiconductor component may be configured to emit electromagnetic radiation in the infrared spectral range.

[0032] Additionally, methods of manufacturing optoelectronic modules are disclosed. In particular, optoelectronic modules can be manufactured by the methods described in this disclosure. That is, all features disclosed in relation to optoelectronic modules are also disclosed for methods of manufacturing optoelectronic modules, and vice versa.

[0033] According to at least one embodiment of the method, a first submodule is provided, which includes a first carrier and a first frame element. The first submodule is, for example, designed as a multilayer ceramic substrate. The first frame element is preferably made of metal.

[0034] According to at least one embodiment of the method, a first semiconductor component is mounted on a first carrier. For example, the semiconductor component is mounted on the first carrier by a soldering process. In particular, a mounting body is arranged between the semiconductor component and the first carrier. The mounting body is made of, for example, ceramic.

[0035] According to at least one embodiment of the method, a second submodule is provided, which includes a second carrier, a frame body, and a second frame element. The second submodule is, for example, designed as a multilayer ceramic substrate. In particular, the frame body includes multiple layers, which advantageously increases the longitudinal extension of the frame body. The second frame element is preferably made of metal.

[0036] According to at least one embodiment of the method, the second and third semiconductor components are mounted on the second carrier, for example by a soldering process.

[0037] According to at least one embodiment of the method, the first sub-module is connected to the second sub-module. Preferably, the first and second sub-modules are connected by a soldering process. In particular, the sub-modules are connected to each other to form a hermetically sealed optoelectronic module.

[0038] According to at least one embodiment of the method, the method comprises: providing a first sub-module having a first carrier and a first frame element; Mounting a first semiconductor component on a first carrier; providing a second sub-module having a second carrier, a frame body, and a second frame element; Mounting a second semiconductor component and a third semiconductor component on a second carrier; connecting the first sub-module to the second sub-module; It has.

[0039] According to at least one embodiment of the method, a plurality of connecting wires are introduced into the frame body. For example, the frame body is made of ceramic or polymer. The connecting wires are provided in particular for supplying an operating current to the semiconductor component. For example, the connecting wires are made of metal. The connecting wires are preferably embedded in the frame body. The embedded connecting wires are protected from external environmental influences. Contact between the connecting wires and other components can be avoided. The risk of electrical short circuits is advantageously reduced.

[0040] According to at least one embodiment of the method, the first frame element is provided on the second frame element between the first sub-module and the second sub-module. In particular, the first and second frame elements are in direct contact with each other. Preferably, the lateral extension and shape of the first frame element are identical to the lateral extension and shape of the second frame element. The first and second frame elements can each form a closed shape.

[0041] According to at least one embodiment of the method, the first semiconductor component is mounted cathode-side and anode-side on the first carrier. In other words, the cathode and anode of the first semiconductor component are oriented facing each other on the first carrier. Therefore, the first semiconductor component is preferably mounted "p-up." This means that electrical contact of the first semiconductor component can be advantageously made from a single side of the first semiconductor component. Advantageously, bonding wires can be omitted.

[0042] According to at least one embodiment of the method, the second semiconductor component and the third semiconductor component are each mounted cathode-side on the second carrier. In other words, the cathode of the second semiconductor component and the cathode of the third semiconductor component are oriented facing the second carrier. Thus, the second and third semiconductor components are preferably mounted "p-up." In particular, the anodes of the second and third semiconductor components are positioned on the opposite side of the second carrier. The anodes of the second and third semiconductor components can be electrically contacted, for example, by bonding wires.

[0043] The optoelectronic modules of the present disclosure are particularly suitable for use as compact laser light sources in portable projection applications, heads-up displays, augmented displays, or virtual reality displays.

[0044] Further advantages and advantageous configurations as well as further embodiments of the optoelectronic module derive from the following exemplary embodiments shown in conjunction with the drawings. [Brief explanation of the drawings]

[0045] [Figure 1A] 1A-1C are schematic cross-sectional views of an optoelectronic module of the present disclosure according to a first exemplary embodiment, viewed from different viewing directions. [Figure 1B] 1A-1C are schematic cross-sectional views of an optoelectronic module of the present disclosure according to a first exemplary embodiment, viewed from different viewing directions. [Figure 1C] 1A-1C are top views of an optoelectronic module of the present disclosure according to a first exemplary embodiment, viewed from different viewing directions. [Figure 2] 1 is a schematic cross-sectional view of an optoelectronic module of the present disclosure according to a second exemplary embodiment. [Figure 3A]10A and 10B are schematic cross-sectional views of an optoelectronic module of the present disclosure according to a third exemplary embodiment, viewed from different viewing directions. [Figure 3B] 10A and 10B are schematic cross-sectional views of an optoelectronic module of the present disclosure according to a third exemplary embodiment, viewed from different viewing directions. [Figure 4A] 10A and 10B are schematic cross-sectional views of an optoelectronic module of the present disclosure according to a fourth exemplary embodiment, viewed from different viewing directions. [Figure 4B] 10A and 10B are schematic cross-sectional views of an optoelectronic module of the present disclosure according to a fourth exemplary embodiment, viewed from different viewing directions. [Figure 5A] 10A-10C are schematic cross-sectional views of an optoelectronic module of the present disclosure according to a fifth exemplary embodiment, viewed from different viewing directions. [Figure 5B] 10A-10C are schematic cross-sectional views of an optoelectronic module of the present disclosure according to a fifth exemplary embodiment, viewed from different viewing directions. [Figure 6] FIG. 10 is a schematic cross-sectional view of an optoelectronic module of the present disclosure according to a sixth exemplary embodiment. [Figure 7A] 3A-3C are schematic plan views of a first sub-module of an optoelectronic module of the present disclosure at different steps of a method for manufacturing an optoelectronic module of the present disclosure. [Figure 7B] 3A-3C are schematic cross-sectional views of a first sub-module of an optoelectronic module of the present disclosure at different steps of a method for manufacturing an optoelectronic module of the present disclosure. [Figure 8A] 3A-3C are schematic plan views of a first sub-module of an optoelectronic module of the present disclosure at different steps of a method for manufacturing an optoelectronic module of the present disclosure. [Figure 8B] 3A-3C are schematic cross-sectional views of a first sub-module of an optoelectronic module of the present disclosure at different steps of a method for manufacturing an optoelectronic module of the present disclosure. [Figure 9A]3A-3C are schematic plan views of a first sub-module of an optoelectronic module of the present disclosure at different steps of a method for manufacturing an optoelectronic module of the present disclosure. [Figure 9B] 3A-3C are schematic cross-sectional views of a first sub-module of an optoelectronic module of the present disclosure at different steps of a method for manufacturing an optoelectronic module of the present disclosure. [Figure 10A] 3A-3C are schematic plan views of a first sub-module of an optoelectronic module of the present disclosure at different steps of a method for manufacturing an optoelectronic module of the present disclosure. [Figure 10B] 3A-3C are schematic cross-sectional views of a first sub-module of an optoelectronic module of the present disclosure at different steps of a method for manufacturing an optoelectronic module of the present disclosure. [Figure 11A] 3A-3C are schematic plan views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 11B] 3A-3C are schematic cross-sectional views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 12A] 3A-3C are schematic plan views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 12B] 3A-3C are schematic cross-sectional views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 13A] 3A-3C are schematic plan views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 13B]3A-3C are schematic cross-sectional views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 14A] 3A-3C are schematic plan views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 14B] 3A-3C are schematic cross-sectional views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 15A] 3A-3C are schematic plan views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 15B] 3A-3C are schematic cross-sectional views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 16A] 3A-3C are schematic plan views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 16B] 3A-3C are schematic cross-sectional views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 17A] 3A-3C are schematic plan views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 17B] 3A-3C are schematic cross-sectional views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 18A] FIG. 10 is a schematic cross-sectional view of an optoelectronic module according to a seventh embodiment of the present disclosure. [Figure 18B]FIG. 10 is a schematic cross-sectional view of an optoelectronic module according to a seventh embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0046] In the drawings, elements that are identical, similar, or have similar functions are provided with the same reference numerals. The proportions of the drawings and the elements shown therein should not be considered to be proportional. Rather, individual elements may be shown in exaggerated size to improve visibility and / or comprehension.

[0047] 1A shows a schematic cross-sectional view of an optoelectronic module 1 of the present disclosure according to a first exemplary embodiment. The optoelectronic module 1 has a first semiconductor component 11 on a mounting side 21A of a first carrier 21, and a second semiconductor component 12 and a third semiconductor component 13 on a mounting side 22A of a second carrier 22. The mounting sides 21A and 22A of the carriers 21 and 22 are sides on which the semiconductor components 11, 12, and 13 can be mounted, respectively. In particular, the mounting sides 21A and 22A include a plurality of solder pads for mounting the semiconductor components 11, 12, and 13, respectively.

[0048] The first carrier 21 and / or the second carrier 22 are multi-layered. The first carrier 21 and the second carrier 22 are mechanically self-supporting. The first carrier 21 and the second carrier 22 are formed of an electrically insulating material. In particular, the first carrier 21 and the second carrier 22 are formed of any one of ceramic, silicon, and glass. Furthermore, the first carrier 21 includes connecting lines 30 provided for electrically connecting the first semiconductor component 11. The connecting lines 30 are at least partially, or preferably completely, embedded in the first carrier 21.

[0049] The second carrier 22 has vias 40 leading to a contact side 22B opposite the mounting side 22A. The vias 40 extend to the opposite contact sides 22B of the second semiconductor component 12 and the third semiconductor component 13. In particular, the vias 40 each comprise a recess through the second carrier 22. The recesses extend completely through the second carrier 22. For example, the recesses of the vias 40 are partially or completely filled with a conductive material. In particular, the recesses are filled with a metal or metal alloy. Advantageously, the vias 40 enable electrical contact of the second and third semiconductor components 12, 13 from the contact side 22B of the second carrier 22.

[0050] As a result, the vias 40 of the second carrier 22 allow solder mounting of the optoelectronic module 1 from the contact side 22B. In this way, for example, mounting of the optoelectronic module 1 on a circuit board can be simplified.

[0051] The semiconductor components 11, 12, and 13 are formed, for example, as light-emitting diodes or laser diodes. The semiconductor components 11, 12, and 13 are configured to emit electromagnetic radiation of different dominant wavelengths in a common emission direction ED. In particular, the semiconductor components 11, 12, and 13 are formed as edge-emitting light-emitting diodes each having one emission side. In other words, the semiconductor components 11, 12, and 13 each have, in particular, an output coupling facet 10A on one side.

[0052] The first semiconductor component 11 emits electromagnetic radiation having at least a first dominant wavelength in the red spectral region. The second semiconductor component 12 emits electromagnetic radiation having at least a second dominant wavelength in the green spectral region. The third semiconductor component 13 emits electromagnetic radiation having at least a third dominant wavelength in the blue spectral region. The emission directions ED of all semiconductor components 11, 12, 13 are aligned parallel to one another. The emission directions ED of semiconductor components 11, 12, 13 are aligned parallel to the mounting sides 21A, 22A of carriers 21, 22.

[0053] The semiconductor components 11, 12, and 13 each have multiple emitter regions 110, 120, and 130. For example, the emitter regions 110, 120, and 130 correspond to the ridges of the semiconductor components 11, 12, and 13. Each of the semiconductor components 11, 12, and 13 has four emitter regions 110, 120, and 130. Specifically, each emitter region 110, 120, and 130 emits electromagnetic radiation having the same dominant wavelength. For example, the dominant wavelengths of the emitter regions 110, 120, and 130 of the semiconductor components 11, 12, and 13 differ from one another by at least 1 nm, preferably at least 2 nm, and particularly preferably at least 5 nm. Small differences in dominant wavelengths can advantageously reduce or avoid undesirable interference effects. The emitter regions 110, 120, and 130 of each of the semiconductor components 11, 12, and 13 can be controlled independently of one another. Independent control allows, for example, a particularly wide dynamic range of the intensity of the emitted electromagnetic radiation.

[0054] The emitter regions 110, 120, 130 of all semiconductor components 11, 12, 13 are arranged opposite one another. This has the advantage that the distance between the emitter regions 110, 120, 130 is as small as possible. In particular, all emitter regions 110, 120, 130 of the optoelectronic module 1 are arranged in an ellipse with a minor axis length NA of at most 60 μm and a major axis length HA of at most 300 μm. This compact arrangement of the emitter regions 110, 120, 130 allows the use of a particularly compact downstream optical element 50.

[0055] The frame body 23 is disposed between the first carrier 21 and the second carrier 22. The frame body 23 serves as a mechanical spacer between the first carrier 21 and the second carrier 22. The frame body 23 further protects the semiconductor components 11, 12, and 13 from external environmental influences. The frame body 23 is formed of an electrically insulating material and includes a plurality of electrical connection lines 30. For example, the frame body 23 may be formed of ceramic or polymer. The connection lines 30 are provided to supply operating current to the first semiconductor component 11, among other things. The connection lines 30 are formed of metal. The connection lines 30 are completely embedded in the frame body 30. The embedded connection lines 30 are particularly well protected from external environmental influences. This advantageously prevents the connection lines 30 from coming into contact with other components, thereby reducing the risk of electrical short circuits.

[0056] A connecting material 70 is disposed between the frame body 23 and the first carrier 21, and between the frame body 23 and the second carrier 22. The connecting material 70 provides an airtight connection between the frame body 23 and the first carrier 21, and between the frame body 23 and the second carrier 22. For example, the connecting material 70 is formed of a solder material, particularly a gold-tin solder. Furthermore, a solder material 80 is disposed between the frame body 23 and the first carrier 21, and between the frame body 23 and the second carrier 22, respectively. The solder material connects the frame body connecting wires 30, which are conductive with the first frame body 21 and the second frame body 22.

[0057] The distance between the emitter regions 110, 120, 130 of one semiconductor component 11, 12, 13 is at most 10 μm. The small distance XE between the emitter regions 110, 120, 130 of one semiconductor component 11, 12, 13 contributes to a compact design of the optoelectronic module 1.

[0058] The lateral distance XL from the second semiconductor component 12 to the third semiconductor component 13 is at most 30 μm, preferably at most 10 μm. The lateral distance XL means the distance between the second semiconductor component 12 and the third semiconductor component 13 in a direction parallel to the mounting side 22A of the second carrier 22. A small lateral distance XL enables a compact design of the optoelectronic module 1.

[0059] The first semiconductor component 11 is located at a maximum of 50 μm, preferably at a maximum of 30 μm, away from the second semiconductor component 12 and the third semiconductor component 13 in the vertical direction. The vertical distance XV means the distance in a direction transverse to the mounting side 22A of the second carrier 22, in particular in a direction perpendicular to the mounting side 22A of the second carrier 22. The vertical distance XV is determined in particular by the vertical extension of the frame body 23 and the semiconductor components 11, 12, 13.

[0060] FIG. 1B shows a schematic cross-sectional view of the optoelectronic module 1 of the present disclosure according to a first exemplary embodiment, taken along the section line AA in FIG. 1A. In the cross-sectional view of FIG. 1B, it can be seen that an optical element 50 is disposed downstream of the semiconductor components 11, 12, and 13 in the emission direction ED. The optical element 50 is a glass plate for protecting the semiconductor components 11, 12, and 13. The optical element 50 is not in direct contact with the semiconductor components 11, 12, and 13. The optical element 50 is disposed on the first carrier 21, the second carrier 22, and the frame body 23. The optical element 50 is disposed on the carriers 21, 22, and the frame body 23, in particular, by soldering. Preferably, the optical element is attached using a gold-tin solder. The frame body 23 has a closed rear side opposite the optical element 50 to seal the semiconductor components 11, 12, and 13.

[0061] 1C shows a schematic top view of an optoelectronic module 1 of the present disclosure according to a first exemplary embodiment. In the top view, the U-shaped expansion of the frame body can be seen. In this way, the semiconductor components 11, 12, 13 are located in an enclosed space and are optimally protected from harmful environmental influences.

[0062] 2 shows a schematic cross-sectional view of an optoelectronic module 1 of the present disclosure according to a second exemplary embodiment. The second exemplary embodiment essentially corresponds to the first exemplary embodiment shown in FIGS. 1A, 1B, and 1C. In contrast to the first exemplary embodiment, the optical element 50 is formed as a collimating lens. Thus, the optical element 50 can collimate the electromagnetic radiation of the semiconductor components 11, 12, and 13, which is emitted in the emission direction ED of the semiconductor components 11, 12, and 13.

[0063] FIG. 3A shows a schematic cross-sectional view of an optoelectronic module of the present disclosure according to a third exemplary embodiment. The third exemplary embodiment essentially corresponds to the first exemplary embodiment shown in FIG. 1A. In contrast to the first exemplary embodiment, the optoelectronic module 1 of the third exemplary embodiment does not include a connecting material 70 between the frame body and the first and second carriers 21, 22. Furthermore, an encapsulating compound 60 is disposed between the output coupling facets 10A of the semiconductor components 11, 12, 13 and the optical element 50. The encapsulating compound 60 is transparent to electromagnetic radiation generated by the optoelectronic module 1 during operation. For example, the encapsulating compound 60 is formed of polysiloxane.

[0064] FIG. 3B shows a schematic cross-sectional view of an optoelectronic module 1 according to a third exemplary embodiment of the present disclosure, taken along the section line AA in FIG. 3A. In the cross-sectional view of FIG. 3B, the encapsulation compound 60 is visible. The output coupling facets 10A of the semiconductor components 11, 12, and 13 are completely covered by the encapsulation compound 60. Thus, the semiconductor components 11, 12, and 13 are already sufficiently protected from external environmental influences. Therefore, the connection material 70 between the frame body 23 and the first and second carriers 21 and 22 can be omitted. For example, it is sufficient to connect the frame body 23 to the first and second carriers 21 and 22 via a solder material 80, which is required for electrical connection. Furthermore, the frame body 23 may have a recess on its side opposite the optical element 50, which ensures increased design freedom.

[0065] 4A shows a schematic cross-sectional view of an optoelectronic module 1 of the present disclosure according to a fourth exemplary embodiment. The fourth exemplary embodiment essentially corresponds to the first exemplary embodiment shown in FIG. 1A. In contrast to the first exemplary embodiment, the first carrier 21 comprises vias 40 that replace the connecting wires 30 and solder material 80 of the frame body 23, and a plurality of bonding wires 90 connect the first carrier 21 to the second carrier 22.

[0066] The via 40 extends to the opposite top side 21B of the first semiconductor component 11. In particular, the via 40 comprises a recess through the first carrier 21. The recess extends completely through the first carrier 21. For example, the recess of the via 40 is partially or completely filled with a conductive material. In particular, the recess is filled with a metal or a metal alloy. Advantageously, the via 40 allows electrical contact of the first semiconductor component 11 from the top side 21A of the first carrier 21.

[0067] The bonding wires 90 connect the vias 40 of the second carrier 22 to the vias 40 of the first carrier 21. In particular, at least two bonding wires 90 are assigned to each via 40. This can reduce electrical resistance and improve response behavior in high frequency control.

[0068] Therefore, the frame body 23 can be formed without the electrical connecting wires 30, which advantageously simplifies the manufacture of the frame body 23. Furthermore, the solder material 80 between the frame body 23 and the first and second carriers 21, 22 can be omitted.

[0069] 4B shows a schematic cross-sectional view of an optoelectronic module 1 of the present disclosure according to a fourth exemplary embodiment, taken along a cross section transverse to FIG. 4A. In the exemplary embodiment of FIG. 4B, each via 40 of the first carrier 21 and each via 40 of the second carrier 22 are assigned a bonding wire 90, respectively. Advantageously, more than one bonding wire 90 may be assigned to each via 40.

[0070] FIG. 5A shows a schematic cross-sectional view of an optoelectronic module 1 according to a fifth exemplary embodiment of the present disclosure. The fifth embodiment essentially corresponds to the first exemplary embodiment shown in FIG. 1A. In contrast to the first exemplary embodiment, the optoelectronic module 1 includes a fourth semiconductor component 14. The fourth semiconductor component 14 is disposed on the mounting side 21A of the first carrier 21 adjacent to the first semiconductor component 11. The fourth semiconductor component 14 has a plurality of fourth emitter regions 140 configured to emit electromagnetic radiation having at least a fourth dominant wavelength in a fourth spectral region. In particular, the fourth semiconductor component 14 has the same optical properties as the second semiconductor component 12. For example, the fourth semiconductor component 14 has the same dominant wavelength, the same laser threshold, the same operating current and operating voltage at the operating point, and the same transconductance as the second semiconductor component 12. Alternatively, the fourth semiconductor component 14 may be configured to emit electromagnetic radiation in the infrared spectral region.

[0071] The lateral distance XL between the first semiconductor component 11 and the fourth semiconductor component 14 is at most 30 μm, preferably at most 10 μm. Preferably, the lateral distance XL between the first semiconductor component 11 and the fourth semiconductor component 14 is the same as the lateral distance XL between the second semiconductor component 12 and the third semiconductor component 13. The distance between the emitter regions 140 of the fourth semiconductor component 14 is at most 10 μm. Alternatively, as shown in the fourth exemplary embodiment, an electrical connection of the fourth semiconductor component 14 by means of bonding wires 90 is also conceivable.

[0072] FIG. 5B shows a schematic cross-sectional view of the optoelectronic module 1 of the present disclosure according to a fifth exemplary embodiment, taken along section line AA of FIG. 5A.

[0073] FIG. 6 shows a schematic cross-sectional view of an optoelectronic module 1 according to a sixth embodiment of the present disclosure. The sixth exemplary embodiment essentially corresponds to the first exemplary embodiment shown in FIG. 1A. In contrast to the first exemplary embodiment, the connecting wires 30 are not embedded in the frame body 23 but are arranged on the inner side 23A of the frame body 23. The inner side 23A of the frame body 23 is the side of the frame body 23 facing the semiconductor components 11, 12, and 13. Advantageously, the connecting wires 30 on the inner side 23A of the frame body 23 are particularly well protected from external environmental influences. Furthermore, manufacturing the connecting wires 30 on the inner side 23A can be simplified compared to embedding the connecting wires 30 in the frame body 23. Preferably, the connecting wires 30 are provided on the inner side 23A of the frame body 23 by sputtering.

[0074] 7A-10B show schematic cross-sectional and plan views of a first sub-module 1A of an optoelectronic module 1 of the present disclosure at different steps of a method for manufacturing an optoelectronic module 1 of the present disclosure.

[0075] 7A shows a schematic top view of a first sub-module 1A of an optoelectronic module 1 of the present disclosure. A first layer 211 of a first carrier 21 is provided, which has a plurality of connecting wires 30. The connecting wires 30 are made of metal. For example, the connecting wires 30 are made of copper.

[0076] Figure 7B shows a schematic cross-section through the part according to Figure 7A along section line AA in Figure 7A. The first carrier 21 has an upper side 21B. The connecting wires 30 are arranged on the side of the first layer 211 opposite the upper side 21B of the first carrier 21.

[0077] 8A shows a schematic top view of the first submodule 1A of the optoelectronic module 1 of the present disclosure in a further step of the manufacturing method of the first submodule 1A. The second layer 212 of the first carrier 21 is provided on the first layer 211 of the first carrier 21. The second layer 212 of the first carrier 21 is arranged on the opposite side of the upper side 21B of the first layer 211 of the first carrier 21. The first layer 211 and the second layer 212 together form the first carrier 21. Preferably, the first layer 211 and the second layer 212 are made of the same material. The first layer 211 and the second layer 212 of the first carrier 21 at least partially surround the connection lines 30. A plurality of contact areas 500 are arranged on the mounting side 21A of the first carrier 21 opposite the upper side 21B. Furthermore, vias 40 extend through the second layer 212 of the first carrier 21.

[0078] Figure 8B shows a schematic cross-section through the part according to Figure 8A along section line AA of Figure 8A, in which it can be seen that the connecting wire 30 is at least partly embedded in the first carrier 21.

[0079] 9A shows a schematic top view of the first sub-module 1A of the optoelectronic module 1 of the present disclosure in a further step of the manufacturing method for the first sub-module 1A. A first frame element 601 and a mounting body 300 are provided on the mounting side 21A of the first carrier 21. The first frame element 601 is made of metal. The mounting body 300 is made of ceramic. The first frame element 601 completely surrounds the mounting body 300. A contact surface 500 is arranged on the side of the mounting body 300 facing away from the first carrier 21.

[0080] FIG. 9B shows a schematic cross-section through the part according to FIG. 9A along section line AA in FIG. 9A.

[0081] 10A shows a schematic top view of the first submodule 1A of the optoelectronic module 1 of the present disclosure in a further step of the manufacturing method of the first submodule 1A. The first semiconductor component 11 is disposed on the side of the mounting body 300 opposite the first carrier 21. The first semiconductor component 11 has electrical contacts on a single backside. Both the anode and cathode of the first semiconductor component 11 contact the contact surface 500 of the mounting body 300. Thus, the first semiconductor component 11 contacts both the anode side and the cathode side of the first carrier 21.

[0082] Figure 10B shows a schematic cross-section through the component according to Figure 10A along section line AA in Figure 10A, in which it can be seen that the emission direction ED of the first semiconductor component 11 is oriented parallel to the main extension plane of the first carrier 21.

[0083] 11A to 17B show schematic cross-sectional and plan views of the second sub-module 1B of the optoelectronic module 1 of the present disclosure at different steps in a method for manufacturing the optoelectronic module 1 of the present disclosure.

[0084] 11A shows a schematic top view of the second sub-module 1B of the optoelectronic module 1 of the present disclosure. A first layer 221 of the second carrier 22 is provided. The first layer 221 of the second carrier 22 has a plurality of vias 40 extending across a main extension surface of the first layer 221 of the second carrier 22 and penetrating the first layer 221 of the second carrier 22.

[0085] Figure 11B shows a schematic cross-section through the part according to Figure 11A along section line AA in Figure 11A. A plurality of contact surfaces 500 are arranged on the contact side 22B of the second carrier 22.

[0086] 12A shows a schematic top view of the second sub-module 1B of the optoelectronic module 1 of the present disclosure in a further step of the method for manufacturing the second sub-module 1B. The second layer 222 of the second carrier 22 is disposed opposite the contact side 22B of the first layer 221 of the second carrier 22. A plurality of contact surfaces 500 are disposed on the mounting side 22A of the second carrier 22 opposite the contact side 22B. Preferably, the first layer 221 of the second carrier and the second layer 222 of the second carrier are formed of the same material.

[0087] 12B shows a schematic cross-sectional view through the component according to FIG. 12A along the section line AA in FIG. 12A. In the cross-sectional view, it is clearly visible that the second layer 222 of the second carrier 22 has a cavity 400. The cavity 400 can advantageously reduce or avoid shadowing of the electromagnetic radiation emitted by the semiconductor components 12, 13 during operation. The cavity starts from the contact surface 500 of the second layer 222 of the second carrier 22 and extends laterally to the end of the second layer 222 of the second carrier. Furthermore, the cavity 400 passes completely through the second layer 222 of the second carrier 22.

[0088] 13A shows a schematic top view of the second submodule 1B of the optoelectronic module 1 of the present disclosure in a further step of the method for manufacturing the second submodule 1B. A first layer 231 of the frame body 23 is disposed on the mounting side 22A of the second carrier 22. The first layer 231 of the frame body 23 extends laterally in a U-shape. The cavity 400 is not covered by the frame body 23.

[0089] FIG. 13B shows a schematic cross-sectional view through the part according to FIG. 13A along section line AA in FIG. 13A.

[0090] 14A shows a schematic top view of the second submodule 1B of the optoelectronic module 1 of the present disclosure in a further step of the method for manufacturing the second submodule 1B. The second layer 232 of the frame body 23 is arranged on the side opposite the mounting side 22A of the first layer 231 of the frame body 23. The second layer portion 232 of the frame body 23 extends laterally in a U-shape. Alternatively, the first layer 231 and the second layer 232 of the frame body 23 can be arranged in adjacent layers in a common method step.

[0091] FIG. 14B shows a schematic cross-section through the part according to FIG. 14A along section line AA in FIG. 14A.

[0092] 15A shows a schematic top view of the second submodule 1B of the optoelectronic module 1 of the present disclosure in a further step of the manufacturing method of the second submodule 1B. The third layer 233 of the frame body 23 is disposed on the side opposite the mounting side 22A of the second layer 232 of the frame body 23. The third layer 233 of the frame body 23 has an opening. Around the opening, the second frame element 602 extends on the side opposite the mounting side 22A of the third layer 233 of the frame body 23. The second frame element 602 is formed of metal. The second frame element 602 has a completely closed shape. Furthermore, a plurality of contact surfaces 500 are disposed on the side opposite the mounting side 22A of the third layer 233 of the frame body 23. Preferably, the first layer 231, the second layer 232, and the third layer 233 of the frame body 23 are formed of the same material. The first, second, and third layers 231, 232, and 233 of the frame body 23 each have a thickness of 100 μm to 300 μm. In particular, the first layer 231 and the second layer 232 of the frame body 23 each have a thickness of 100 μm, and the third layer 233 of the frame body 23 has a thickness of 200 μm. The frame body 23 as a whole has a thickness of at least 400 μm.

[0093] FIG. 15B shows a schematic cross-section through the part according to FIG. 15A along section line AA in FIG. 15A.

[0094] 16A shows a schematic top view of the second submodule 1B of the optoelectronic module 1 of the present disclosure in a further step of the method for manufacturing the second submodule 1B. An optical element 50 is disposed on the side facing the cavity 400. The only opening remaining in the second submodule 1B is an opening in the third layer 233 of the frame body 23.

[0095] FIG. 16B shows a schematic cross-section through the part according to FIG. 16A along section line AA in FIG. 16A.

[0096] 17A shows a schematic top view of the second submodule 1B of the optoelectronic module 1 of the present disclosure during a further step in the manufacturing method of the second submodule 1B. The second and third semiconductor components 12 and 13 are disposed on the mounting side 22A of the second carrier 22. The second and third semiconductor components 12 and 13 are mounted through openings in the third layer 233 of the frame body 23. The second and third semiconductor components 12 and 13 each have an anode and a cathode for electrical connection. The second and third semiconductor components 12 and 13 are disposed with their cathodes on the mounting side 22A of the second carrier 22. Thus, the second and third semiconductor components 12 and 13 are contacted to the cathode sides of the second carrier 22. The anodes of the second and third semiconductor components 12 and 13 are located opposite the cathodes of the second and third semiconductor components 12 and 13, respectively. The anodes of the second and third semiconductor components 12, 13, respectively, are in electrical contact with bonding wire 90.

[0097] Figure 17B shows a schematic cross-section through the component according to Figure 17A along section line AA in Figure 17A, in which it can be seen that the emission directions ED of the second and third semiconductor components 12, 13 are oriented parallel to the main extension plane of the second carrier 22.

[0098] 18A and 18B show schematic cross-sectional views of an optoelectronic module of the present disclosure according to a seventh exemplary embodiment. A first sub-module 1A and a second sub-module 1B are coupled to each other to form an optoelectronic module 1. The first sub-module 1A is attached at its first frame element 601 to the second frame element 602 of the second sub-module 1B. For example, the first frame element 601 is connected to the second frame element 602 by soldering. Furthermore, when the first sub-module 1A and the second sub-module 1B are connected, an electrical connection is established between the contact surface 500 of the first sub-module 1A and the contact surface 500 of the second sub-module 1B.

[0099] The first sub-module 1A is connected to the second sub-module 1B in such a way that a hermetically sealed optoelectronic module 1 is formed, in which the semiconductor components 11, 12, 13 are protected from the influences of the external environment. In other words, the semiconductor components 11, 12, 13 are enclosed in the optoelectronic module 1 in an air-tight and liquid-tight manner.

[0100] Figure 18B shows a schematic cross-section through the part according to Figure 18A along the section line AA in Figure 18A, in which it can be clearly seen that the emission of electromagnetic radiation in emission direction ED takes place through optical element 50.

[0101] The present invention is not limited by the description based on the embodiments, but rather includes any novel feature and any combination of features, and in particular any combination of features in the claims, even if that feature or combination itself is not explicitly recited in the claims or embodiments.

[0102] This patent application claims priority from German patent applications 102022106943.5 and 102022127065.3, the disclosures of which are incorporated herein by reference. [Explanation of symbols]

[0103] 1 Optoelectronics Module 1A First submodule 1B Second submodule 10A output coupling facet 11 First Semiconductor Parts 110 First emitter region 12 Secondary semiconductor components 120 Second emitter region 13 Third Semiconductor Components 130 Third emitter region 14 Fourth Semiconductor Parts 140 4th emitter region 21 First Career 21A Mounting side 21B Upper side 22 Second Career 22A Mounting side 22B contact side 23 Frame body 23A inside 30 connecting wires 40 Beer 50 Optical Elements 60 Sealing Compound 70 Connecting Materials 80 Solder materials 90 Bonding Wire 211 First Carrier, First Layer 212 Second layer of the first carrier 221 1st layer of the 2nd carrier 222 Second Carrier, Second Layer 231 First layer of frame body 232 Second layer of frame body 233 Third layer of frame body 300 Implementation 400 cavity 500 contact surface 601 First frame element 602 Second frame element ED emission direction AA cutting line HA spindle NA secondary shaft XE Distance between emitter regions XL: Lateral distance between semiconductor components XV Vertical distance between semiconductor components

Claims

1. A first semiconductor component (11) is mounted on a mounting side (21A) of the first carrier (21), a second semiconductor component (12) and a third semiconductor component (13) on a mounting side (22A) of the second carrier (22); the semiconductor components (11, 12, 13) are configured to emit electromagnetic radiation of different dominant wavelengths in a common emission direction (ED); The mounting side (21A) of the first carrier (21) faces the mounting side (22A) of the second carrier (22), The semiconductor component (11, 12, 13) has a plurality of emitter regions (110, 120, 130), An optoelectronic module (1), wherein the emitter regions (110, 120, 130) of each semiconductor component (11, 12, 13) are controllable independently of one another.

2. A frame body (23) is disposed between the first carrier (21) and the second carrier (22). An optoelectronic module (1) according to claim 1.

3. The frame body (23) is made of an electrically insulating material and is provided with a plurality of electrical connection wires (30). An optoelectronic module (1) according to claim 2.

4. The electrical connection wire (30) is disposed inside (23A) of the frame body (23). An optoelectronic module (1) according to claim 3.

5. The electrical connection wire (30) is at least partially embedded in the frame body (23). An optoelectronic module (1) according to claim 3.

6. A connecting material (70) is disposed between the frame body (23) and the first carrier (21), and between the frame body (23) and the second carrier (22), respectively. An optoelectronic module (1) according to any one of claims 2 to 5.

7. The first carrier (21) has a via (40) leading to an upper side (21B) opposite to the first semiconductor component (11). An optoelectronic module (1) according to claim 1 or 2.

8. The upper side (21B) of the first carrier (21) is conductively connected to the first carrier (21) via a bonding wire (90). An optoelectronic module (1) according to claim 7.

9. At least two bonding wires (90) are assigned to each via (40); An optoelectronic module (1) according to claim 8.

10. the emitter regions (110, 120, 130) of all semiconductor components (11, 12, 13) are arranged opposite each other; An optoelectronic module (1) according to claim 2.

11. the distance (XE) between the emitter regions (110, 120, 130) of one semiconductor component (11, 12, 13) is at most 10 μm; An optoelectronic module (1) according to claim 2.

12. The lateral distance (XL) from the second semiconductor component (12) to the third semiconductor component (13) is at most 30 μm, preferably at most 10 μm; An optoelectronic module (1) according to claim 2.

13. the first semiconductor component (11) is located at a maximum vertical distance of 50 μm, preferably at a maximum distance of 30 μm, from the second semiconductor component (12) and the third semiconductor component (13); An optoelectronic module (1) according to claim 2.

14. The first carrier (21) and / or the second carrier (22) are formed of an electrically insulating material. An optoelectronic module (1) according to claim 2.

15. The second carrier (22) has vias (40) that reach a contact side (22B) opposite the mounting side (22A). An optoelectronic module (1) according to claim 2.

16. A method for manufacturing an optoelectronic module (1), comprising the steps of: providing a first sub-module (1A) having a first carrier (21) and a first frame element (601); Mounting a first semiconductor component (11) on the first carrier (21); providing a second sub-module (1B) having a second carrier (22), a frame body (23), and a second frame element (602); Mounting a second semiconductor component (12) and a third semiconductor component (13) on the second carrier (22); and connecting the first sub-module (1A) to the second sub-module (1B). A method for manufacturing an optoelectronic module (1).

17. A plurality of connecting wires (30) are introduced into the frame body (23).

17. A method for manufacturing an optoelectronic module (1) according to claim 16.

18. The first frame element (601) is provided on the second frame element (602) between the first sub-module (1A) and the second sub-module (1B), 18. A method for manufacturing an optoelectronic module (1) according to claim 16 or 17.

19. The first semiconductor component (11) is mounted so that both a cathode electrode and an anode electrode are in electrical contact with the mounting side (21A) of the first carrier (21).

18. A method for manufacturing an optoelectronic module (1) according to claim 17.

20. The second semiconductor component (12) and the third semiconductor component (13) are mounted such that their cathode electrodes are electrically connected to the mounting side (22A) of the second carrier (22).

18. A method for manufacturing an optoelectronic module (1) according to claim 17.

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