Substrate processing apparatus and substrate processing method

Abstract

To provide technology that efficiently processes a substrate when the substrate is immersed in a mixed liquid that generates the heat of mixing.SOLUTION: A substrate processing device comprises: a processing tank that stores a process liquid with which a substrate is processed; a circulation path that extracts the process liquid from the processing tank and returns to the processing tank; a substrate holding unit that holds the substrate; a lift unit that lifts or lowers the substrate holding unit between an immersion position in the processing tank and a standby position above the processing tank; and a control unit that controls the lift unit. The process liquid is a mixed liquid that is composed of a mixture of a first component and a second component, and that generates the heat of mixing. The control unit exercises control so as to immerse the substrate in the mixed liquid before the temperature of the mixed liquid rises due to the heat of mixing and reaches a peak temperature.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] The substrate processing apparatus described in Patent Document 1 includes a processing tank for storing a processing liquid, a circulation path for circulating the processing liquid in the processing tank, a substrate holder for holding a substrate, and a lifting unit for raising and lowering the substrate holder between an immersion position in the processing tank and a standby position above the processing tank. The processing liquid is a mixture of sulfuric acid and hydrogen peroxide. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2011-114305 Summary of the Invention [Problem to be solved by the invention]

[0004] One aspect of the present disclosure provides a technique for efficiently processing a substrate when the substrate is immersed in a mixed liquid that generates heat of mixing. [Means for solving the problem]

[0005] A substrate processing apparatus according to one aspect of the present disclosure includes a processing tank that stores a processing liquid for processing a substrate, a circulation path that removes the processing liquid from the processing tank and returns it to the processing tank, a substrate holding unit that holds the substrate, a lifting unit that raises and lowers the substrate holding unit between an immersion position inside the processing tank and a standby position above the processing tank, and a control unit that controls the lifting unit. The processing liquid is a mixed liquid obtained by mixing a first component and a second component, and is a mixed liquid that generates heat of mixing. The control unit controls the substrate to be immersed in the mixed liquid before the temperature of the mixed liquid rises due to the heat of mixing and reaches a peak temperature. [Effects of the Invention]

[0006] According to one aspect of the present disclosure, when a substrate is immersed in a mixed liquid that generates heat of mixing, the substrate can be efficiently processed. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a front cross-sectional view showing a substrate processing apparatus according to an embodiment. [Figure 2] FIG. 2 is a side cross-sectional view showing an example of the inner tank and the substrate holder of FIG. [Figure 3] FIG. 3 is a flowchart showing a substrate processing method according to an embodiment. [Figure 4] FIG. 4 is a timing chart showing an example of a substrate processing method. [Figure 5] FIG. 5 is a diagram showing an example of the changes in temperature, H2O2 concentration, and H2SO4 concentration over time. [Figure 6] FIG. 6 is a diagram showing an example of the relationship between the temperature and the etching rate. [Figure 7] FIG. 7 is a diagram showing an example of the relationship between the H2O2 concentration and the etching rate. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In each drawing, the same or corresponding components are denoted by the same reference numerals, and their description may be omitted. In this specification, the X-axis, Y-axis, and Z-axis directions are perpendicular to each other. The X-axis and Y-axis directions are horizontal directions, and the Z-axis direction is vertical.

[0009] Conventionally, batch-type apparatuses and single-wafer-type apparatuses have been known as substrate processing apparatuses. The batch-type apparatus processes multiple substrates at once by simultaneously immersing the substrates in a processing solution. On the other hand, the single-wafer-type apparatus holds the substrates horizontally and rotates the substrates while dripping processing solution onto the upper surfaces of the substrates. The technology disclosed herein relates to batch-type technology. The batch-type apparatus is more suitable for long-term processing than the single-wafer-type apparatus.

[0010] A mixed solution obtained by mixing a first component and a second component may be used as the processing liquid. Here, the mixed solution may contain a third component. The mixed solution generates heat of mixing. Heat of mixing is the heat of reaction generated by mixing multiple types of components. For example, when sulfuric acid and hydrogen peroxide solution (H2O2 + H2O) are mixed, heat of dilution of the sulfuric acid, heat of hydration of the sulfuric acid and water, or heat of reaction between the sulfuric acid and hydrogen peroxide is generated. Multiple heats of mixing may be generated in stages depending on the temperature.

[0011] The higher the temperature, the more likely the exothermic reaction will proceed, which can cause the temperature of the mixed liquid to rise rapidly. As a result, the temperature of the mixed liquid may overshoot the target temperature. If the temperature of the mixed liquid then stabilizes at the target temperature and then the substrates are immersed in the mixed liquid, the waiting time before the immersion begins is lengthened. As a result, the processing capacity (number of substrates processed per unit time) of the substrate processing apparatus decreases.

[0012] Furthermore, if the temperature of the mixed solution overshoots the target temperature, thermal decomposition is accelerated. For example, hydrogen peroxide decomposes into water and oxygen at high temperatures. The concentration of hydrogen peroxide drops significantly below the target concentration due to thermal decomposition. Even if hydrogen peroxide is subsequently replenished to the mixed solution, it is difficult to restore the hydrogen peroxide concentration in the mixed solution to the target concentration.

[0013] The technology of the present disclosure, which will be described in detail later, involves immersing a substrate in a mixed solution before the temperature of the mixed solution rises due to the heat of mixing and reaches its peak temperature (highest temperature). This allows the substrate to be treated before the concentration of components that will thermally decompose drops significantly, enabling efficient treatment of the substrate. Furthermore, the waiting time before the start of immersion can be shortened, allowing efficient treatment of the substrate.

[0014] First, a substrate processing apparatus 1 according to one embodiment will be described with reference to Figures 1 and 2. The substrate processing apparatus 1 includes, for example, a processing bath 10, a first component supply unit 15, a second component supply unit 17, a discharge unit 18, a circulation path 20, a substrate holder 30, a lifting unit 40, and a control unit 90.

[0015] The processing tank 10 stores a processing liquid L for processing substrates W. The processing tank 10 includes, for example, an inner tank 11 and an outer tank 12. The inner tank 11 stores the processing liquid L. A plurality of substrates W are immersed in the processing liquid L stored in the inner tank 11. The outer tank 12 collects the processing liquid L that overflows from the inner tank 11.

[0016] The processing liquid L is a mixture of a first component and a second component, and generates heat of mixing. For example, the first component is sulfuric acid and the second component is hydrogen peroxide. The processing liquid L may contain a third component, which is, for example, water. The processing liquid L is, for example, an aqueous solution containing sulfuric acid and hydrogen peroxide (so-called SPM: Sulfuric acid-hydrogen peroxide mixture).

[0017] The processing liquid L is used, for example, as an etching liquid. The etching liquid removes a desired film formed on the substrate W. For example, the SPM removes a resist film, a polysilicon film, an amorphous silicon film, or a metal film. The metal film is, for example, a tungsten film.

[0018] The SPM used to remove metal films has a relatively high target concentration of hydrogen peroxide and a relatively high target temperature. The target mixing ratio (mass ratio) of hydrogen peroxide to sulfuric acid (H2O2 / H2SO4) is preferably greater than 1 / 4. The target temperature is preferably 125°C to 170°C, and more preferably 130°C to 170°C.

[0019] The higher the target concentration of hydrogen peroxide, the more likely heat of mixing is generated. Also, the higher the target temperature, the more likely heat of mixing is generated. Therefore, the technology of the present disclosure is particularly effective when using SPM to remove metal films.

[0020] The first component supply unit 15 supplies the first component constituting the treatment liquid L to the treatment tank 10. The first component supply unit 15 is, for example, a sulfuric acid supply unit. The sulfuric acid may be supplied to the treatment tank 10 in the form of an aqueous solution. The sulfuric acid is supplied to the inner tank 11. The first component supply unit 15 includes, for example, an open / close valve, a flow rate controller, and a flow meter, all of which are not shown.

[0021] The second component supply unit 17 supplies the second component constituting the treatment liquid L to the treatment tank 10. The second component supply unit 17 is, for example, a hydrogen peroxide supply unit. The hydrogen peroxide may be supplied to the treatment tank 10 in the form of an aqueous solution. The hydrogen peroxide is supplied to the inner tank 11. The second component supply unit 17 includes, for example, an on-off valve, a flow rate controller, and a flow meter, all of which are not shown.

[0022] The discharge unit 18 discharges the processing liquid L stored in the processing tank 10. For example, the discharge unit 18 discharges the processing liquid L stored in the inner tank 11. The discharge unit 18 includes a discharge path 18a and an opening / closing valve 18b. One end of the discharge path 18a is connected to the inner tank 11. The opening / closing valve 18b opens and closes the discharge path 18a under the control of the control unit 90.

[0023] The circulation path 20 takes the processing liquid L out of the processing tank 10 and returns it to the processing tank 10. The circulation path 20 can circulate the processing liquid L, thereby promoting mixing of the multiple components that make up the processing liquid L. For example, the circulation path 20 takes the processing liquid L out of the outer tank 12 and returns it to the inner tank 11. The upstream end of the circulation path 20 is connected to the outer tank 12, and the downstream end is connected to a nozzle 29 provided inside the inner tank 11.

[0024] In the middle of the circulation path 20, for example, from the upstream side to the downstream side, a first on-off valve 21, a cooling gas supply unit 22, a pump 23, a first cooling gas discharge unit 24, a heater 25, a second cooling gas discharge unit 26, a second on-off valve 27, and a filter 28 are provided in this order. Note that the types and order of the devices provided in the middle of the circulation path 20 are not particularly limited.

[0025] With the first on-off valve 21 closing the circulation path 20 near the outer bath 12, the cooling gas supply unit 22 supplies cooling gas to the circulation path 20. Nitrogen gas or dry air is used as the cooling gas. The cooling gas discharges the processing liquid L remaining in the circulation path 20 to the outside of the circulation path 20 from the first cooling gas discharge unit 24 and the second cooling gas discharge unit 26. This allows the circulation path 20 to be cooled.

[0026] While the cooling gas supply unit 22 supplies the cooling gas to the circulation path 20, the control unit 90 causes the pump 23 to idle. Furthermore, while the cooling gas supply unit 22 supplies the cooling gas to the circulation path 20, the second opening / closing valve 27 closes the circulation path 20 to prevent the filter 28 from drying out. The second opening / closing valve is provided upstream of the filter 28.

[0027] The cooling gas supply unit 22 supplies cooling gas at room temperature to the circulation path 20, but may also supply cooling gas at a temperature lower than room temperature to the circulation path 20. This allows for efficient cooling of the circulation path 20. The cooling gas supply unit 22 may have a cooler that cools the cooling gas at room temperature to a temperature lower than room temperature. The cooling gas supply unit 22 is an example of a cooling unit.

[0028] As the cooling unit, a cooling liquid supply unit 16 may be used instead of (or in addition to) the cooling gas supply unit 22. The cooling liquid supply unit 16 supplies a cooling liquid to the circulation path 20 via the processing tank 10 (e.g., the outer tank 12). For example, sulfuric acid, which is the first component, is used as the cooling liquid. The cooling liquid discharges the processing liquid L remaining in the circulation path 20 into the inner tank 11. This allows the circulation path 20 to be cooled.

[0029] The control unit 90 operates the pump 23 to supply the cooling liquid to the circulation path 20. The control unit 90 also opens the first opening / closing valve 21 and the second opening / closing valve 27 to allow the cooling liquid to pass through. The cooling liquid passes through the circulation path 20 and is discharged into the inner tank 11, and then is discharged from the discharge unit 18 to the outside of the inner tank 11.

[0030] The coolant supply unit 16 supplies coolant at room temperature to the circulation path 20, but may also supply coolant at a temperature lower than room temperature to the circulation path 20. This allows for efficient cooling of the circulation path 20. The coolant supply unit 16 may also have a cooler that cools the coolant at room temperature to a temperature lower than room temperature.

[0031] The substrate holding unit 30 holds substrates W, as shown in Fig. 2, for example. For example, the substrate holding unit 30 arranges multiple substrates W in the Y-axis direction and holds each substrate W upright. The substrate holding unit 30 has multiple (for example, four) holding arms 31. Each holding arm 31 is arranged along the Y-axis direction and has multiple grooves spaced apart in the Y-axis direction. Each substrate W is held by the grooves of the holding arm 31.

[0032] The lifting unit 40 raises and lowers the substrate holding unit 30 between an immersion position inside the processing tank 10 and a standby position above the processing tank 10. The lifting unit 40 includes, for example, a motor (not shown) and a ball screw that converts the rotational motion of the motor into linear motion of the substrate holding unit 30. The lifting unit 40 may also move the substrate holding unit 30 horizontally.

[0033] The control unit 90 is, for example, a computer, and includes an arithmetic unit 91 such as a CPU (Central Processing Unit), and a storage unit 92 such as a memory. The storage unit 92 stores programs that control various processes executed in the substrate processing apparatus 1. The control unit 90 controls the operation of the substrate processing apparatus 1 by causing the arithmetic unit 91 to execute the programs stored in the storage unit 92.

[0034] Next, a substrate processing method according to one embodiment will be described with reference to Figures 3 and 4. The substrate processing method includes, for example, steps S101 to S106 shown in Figure 3. Steps S101 to S106 are performed under the control of the control unit 90. Note that the substrate processing method does not necessarily include all of steps S101 to S106, or may include processes other than steps S101 to S106.

[0035] 3 starts when preparation of a new batch is completed. One batch consists of a plurality of substrates W (for example, 25, 50, or 100). The processing from step S101 onwards is carried out for each batch. The processing liquid L is replaced for each batch.

[0036] First, between time t0 and time t1, the discharge unit 18 discharges the processing liquid L from the inner bath 11 to empty the inner bath 11 (step S101). During this time, the pump 23 sends the processing liquid L from the outer bath 12 to the inner bath 11 via the circulation path 20 to empty the outer bath 12. By step S101, the inner bath 11 and the outer bath 12 are emptied. However, the processing liquid L remains in the circulation path 20, and the circulation path 20 remains at a high temperature.

[0037] Next, from time t1 to time t2, the circulation path 20 is cooled (step S102). Specifically, for example, the coolant supply unit 16 supplies the coolant to the circulation path 20 via the outer tank 12, and the discharge unit 18 discharges the coolant from the inner tank 11, which are alternately repeated. To cool the circulation path 20, a cooling gas supply unit 22 may be used instead of (or in addition to) the coolant supply unit 16. In either case, by cooling the circulation path 20, residual heat can be removed, and promotion of an exothermic reaction due to the residual heat can be prevented.

[0038] Next, from time t2 to time t3, first component supply unit 15 supplies sulfuric acid at room temperature to inner tank 11, and second component supply unit 17 supplies hydrogen peroxide at room temperature to inner tank 11 (step S103). The hydrogen peroxide is supplied in the form of an aqueous solution. As the supply of the hydrogen peroxide solution progresses, heat of mixing is generated by mixing the hydrogen peroxide solution and sulfuric acid, and the temperature T of the treatment solution L rises.

[0039] Next, at time t3, the pump 23 starts circulating the processing liquid L (step S104). The circulation promotes mixing of the hydrogen peroxide solution and sulfuric acid, and the heat of mixing further increases the temperature T of the processing liquid L. As shown in FIG. 4, the temperature T of the processing liquid L increases to, for example, around 110°C and then temporarily stabilizes.

[0040] Next, at time t4, the heater 25 starts heating the processing liquid L (step S105). The heater 25 is provided in the circulation path 20, but may also be provided in the processing tank 10. The heater 25 is an example of a heating unit that heats the processing liquid L. After time t4, the temperature T of the processing liquid L rises again, and heat of mixing begins to be generated again.

[0041] Next, at time t5, the temperature T of the treatment liquid L reaches the immersion start temperature T STA When the immersion start temperature T reaches the predetermined temperature (for example, 130° C.), the lifting unit 40 lowers the substrate holder 30 from the standby position to the immersion position, and the substrate W is immersed in the processing liquid L (step S106). STA is the etching start temperature T ETC (see FIG. 6), but may be set lower.

[0042] After time t5, the temperature T of the treatment liquid L drops to the target temperature T PRE (e.g., 140°C) overshoots the target temperature T PRE is the immersion start temperature T STA The temperature T of the treatment liquid L is higher than the target temperature T PRE After exceeding the peak temperature T MAX (e.g. 160°C) is reached. MAX is the target temperature T PRE Higher than.

[0043] Peak temperature T MAX is controlled so as not to exceed a threshold value. The threshold value is determined based on, for example, the heat-resistant temperature of the treatment bath 10. The peak temperature T MAX If the temperature T exceeds the threshold value, the control unit 90 may reduce the amount of hydrogen peroxide solution supplied to the treatment tank 10 from time t2 to time t3 to reduce the amount of heat of mixing. MAX After reaching this, it starts to decrease.

[0044] Next, at time t6, the control unit 90 detects that the temperature T has reached the peak temperature T MAX By detecting when the temperature T starts to drop from the peak temperature T MAX The temperature T is detected by a temperature detection unit 51 (see FIG. 1). The temperature detection unit 51 is provided in the treatment bath 10, but may also be provided in the circulation path 20. The temperature detection unit 51 transmits a signal indicating the detection result to the control unit 90. The control unit 90 determines whether the temperature T reaches the peak temperature T, for example, based on the slope of the temperature T. MAX Detect when it reaches

[0045] After time t6, the control unit 90 controls the heater 25 with a setting different from that before time t6. That is, the control unit 90 controls the heater 25 with a setting different from that before time t6. MAX The heater 25 is controlled with different settings before and after the temperature reaches 100°C. The heater 25 can be appropriately controlled during a period when the amount of heat of mixing is large and during a period when the amount of heat of mixing is small.

[0046] The control unit 90 determines whether the temperature T of the treatment liquid L reaches a peak temperature T MAX The heater 25 is feedback-controlled using different transfer functions before and after reaching time t6 (before and after time t6). When the feedback control is PID control or PI control, the transfer function includes at least a proportional gain Kp and an integral gain Ki. The proportional gain Kp before time t6 is set to be larger than the proportional gain Kp after time t6. The integral gain Ki before time t6 is set to be smaller than the integral gain Ki after time t6.

[0047] Furthermore, the control unit 90 may determine whether the temperature T of the treatment liquid L reaches a peak temperature T MAX The heater 25 may be subjected to constant current control at different current values ​​before and after the temperature reaches t6 (before and after time t6). The current supplied to the heater 25 before time t6 may be set to be smaller than the current supplied to the heater 25 after time t6. This is because the temperature is actively adjusted using the heater 25 after time t6.

[0048] From the start of mixing sulfuric acid and hydrogen peroxide solution, the temperature T of the treatment liquid L reaches the peak temperature T MAX During the period until the temperature T of the treatment liquid L reaches the peak temperature T MAX During the period from when the temperature reaches 100° C. until the immersion of the substrate W is completed, the total heat quantity of the mixed heat is smaller than the total heat quantity of the heater 25.

[0049] After time t6, the second component supply unit 17 may supply hydrogen peroxide to the treatment bath 10. When the temperature T of the treatment liquid L reaches the target temperature T PREIf the concentration of hydrogen peroxide exceeds the target concentration C1, the thermal decomposition of hydrogen peroxide will be accelerated. PRE will be significantly lower than

[0050] Therefore, after time t6, the second component supply unit 17 may replenish hydrogen peroxide to the treatment tank 10 to prevent a decrease in the concentration of hydrogen peroxide. After time t6, the generation of heat of mixing subsides. If hydrogen peroxide is replenished after the generation of heat of mixing subsides, an excessive temperature rise of the treatment solution L can be prevented.

[0051] In addition, in Figure 5, C2 PRE is the target concentration of sulfuric acid.

[0052] Next, at time t7, the lifting unit 40 raises the substrate holder 30 from the immersion position to the standby position, and pulls the substrate W out of the processing liquid L. This completes the immersion of the substrate W in the processing liquid L. The immersion time is set in advance by experiment or the like, and is set in advance based on, for example, the film thickness of the etching target and the etching rate.

[0053] The control unit 90 may correct the immersion time for each batch so that the etching amount falls within an allowable range. For example, the control unit 90 acquires at least one of the temperature profile and the concentration profile of the processing liquid L, and corrects the immersion time based on the acquired data. This is because the etching rate depends on the temperature T and the hydrogen peroxide concentration C1.

[0054] As shown in Figure 6, the temperature T is the etching start temperature T ETC When the temperature T exceeds the etching start temperature T, etching begins. The higher the temperature T of the processing liquid L, the faster the etching rate ER. The relational expression between the etching rate ER and the temperature T is obtained in advance by experiment or the like. The control unit 90 may correct the immersion time based on the relational expression between the etching rate ER and the temperature T and the temperature profile. In addition, the control unit 90 may correct the immersion time based on the relational expression between the etching rate ER and the temperature T when the temperature T is equal to or exceeds the etching start temperature T ETC After crossing the threshold, T and T ETC Difference (TT ETC) may be integrated and the immersion time may be corrected based on the integrated value.

[0055] As shown in FIG. 7, the etching rate ER also depends on the hydrogen peroxide concentration C1. The higher the hydrogen peroxide concentration C1, the faster the etching rate ER. The relational expression between the etching rate ER and the hydrogen peroxide concentration C1 is determined in advance by experiment or the like. The control unit 90 may correct the immersion time based on the relational expression between the etching rate ER and the hydrogen peroxide concentration C1 and the profile of the hydrogen peroxide concentration C1. The relational expression between the etching rate ER and the hydrogen peroxide concentration C1 may be prepared for each temperature T.

[0056] The hydrogen peroxide concentration C1 is detected by a concentration detection unit 52 (FIG. 1). The concentration detection unit 52 is provided in the treatment tank 10, but may also be provided in the circulation path 20. The concentration detection unit 52 transmits a signal indicating the detection result to the control unit 90. The concentration detection unit 52 may also detect the sulfuric acid concentration C2. The hydrogen peroxide concentration C1 and the sulfuric acid concentration C2 may be detected by separate concentration detection units 52.

[0057] As described above, according to this embodiment, the temperature T of the treatment liquid L rises due to the heat of mixing, and the peak temperature T MAX The substrate W is immersed in the processing liquid L before the temperature reaches 1000° C. This allows the substrate W to be processed before the concentration of thermally decomposing components (e.g., hydrogen peroxide) drops significantly, thereby enabling efficient processing of the substrate W. Furthermore, the waiting time until the start of immersion can be shortened, allowing the substrate W to be processed efficiently.

[0058] The substrate processing apparatus 1 is configured such that the temperature T of the processing liquid L reaches a peak temperature T MAX A prediction unit may be provided that predicts the temperature profile of the process of rising toward the target temperature. The prediction unit may be part of the control unit 90. The prediction unit predicts the temperature profile of the current batch based on, for example, the temperature profiles of past batches. The temperature profile hardly fluctuates between batches.

[0059] The control unit 90 controls the temperature T of the treatment liquid L to reach the peak temperature T MAXBefore the temperature of the processing liquid L reaches the peak temperature T, the processing liquid L is controlled to send a command to the transport device 60 (see FIG. 1) to transport the substrate W to the substrate holder 30 based on the prediction result of the prediction unit. MAX The substrate W can be immersed in the processing liquid L before reaching the target.

[0060] In this embodiment, at time t5, the temperature T of the treatment liquid L reaches the immersion start temperature T STA When the temperature of the processing liquid L reaches 130°C (for example, 130°C), the immersion of the substrate W begins, but the technology of the present disclosure is not limited to this. For example, the immersion of the substrate W may begin after the circulation of the processing liquid L starts (time t3) and before the heating by the heater 25 starts (time t4).

[0061] Before heating by the heater 25 starts (time t4), the sulfuric acid and the hydrogen peroxide solution are mixed uniformly, and the temperature T of the processing liquid L temporarily stabilizes. Immersion of the substrate W may begin while the temperature T is stabilized. In this case, it is easier to manage the timing of starting immersion of the substrate W compared to starting immersion of the substrate W while the temperature T is rising.

[0062] Before the start of heating by the heater 25 (time t4), the temperature T is set to the etching start temperature T ETC The etching amount is determined by the temperature T when the etching temperature T is lower than the etching start temperature T ETC The etching amount can be easily controlled by the time elapsed since the temperature T reached the etching start temperature T. ETC It is preferable to start immersing the substrate W while the temperature is stable at a lower temperature than the temperature of the substrate W.

[0063] Although the embodiments of the substrate processing apparatus and substrate processing method according to the present disclosure have been described above, the present disclosure is not limited to the above-described embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These changes also naturally fall within the technical scope of the present disclosure. [Explanation of symbols]

[0064] 1. Substrate processing equipment 10 Treatment tank 20 Circulation path 30 Board holding part 40 Lifting section L processing liquid W substrate

Claims

1. A substrate processing apparatus comprising: a processing tank that stores a processing liquid for processing a substrate; a circulation path that removes the processing liquid from the processing tank and returns it to the processing tank; a substrate holding unit that holds the substrate; an elevating unit that raises and lowers the substrate holding unit between an immersion position inside the processing tank and a standby position above the processing tank; and a control unit that controls the elevating unit, the treatment liquid is a mixed liquid obtained by mixing a first component and a second component, and is a mixed liquid that generates heat of mixing, The control unit controls the substrate to be immersed in the mixed liquid before the temperature of the mixed liquid increases due to the heat of mixing and reaches a peak temperature.

2. a heating unit that heats the mixed liquid, The substrate processing apparatus according to claim 1 , wherein the control unit controls the heating unit with different settings before and after the temperature of the mixed liquid reaches the peak temperature.

3. The substrate processing apparatus according to claim 2 , wherein the control unit feedback-controls the heating unit using different transfer functions before and after the temperature of the mixed liquid reaches the peak temperature.

4. The substrate processing apparatus according to claim 2 , wherein the control unit performs constant current control on the heating unit with different current values ​​before and after the temperature of the mixed liquid reaches the peak temperature.

5. during a period from the start of mixing of the first component and the second component to the time when the temperature of the mixed liquid reaches the peak temperature, the total heat amount of the mixing heat is greater than the total heat amount of the heating section, 5. The substrate processing apparatus according to claim 2, wherein the total heat quantity of the heat of mixing is smaller than the total heat quantity of the heating section during the period from when the temperature of the mixed liquid reaches the peak temperature to when the immersion of the substrate is completed.

6. a prediction unit that predicts a temperature profile as the temperature of the mixed liquid rises toward the peak temperature; and a transport device that transports the substrate, The substrate processing apparatus according to any one of claims 1 to 4, wherein the control unit controls the transport device to send a command to transport the substrate to the substrate holding unit based on the prediction result of the prediction unit before the temperature of the mixed liquid reaches the peak temperature.

7. 5. The substrate processing apparatus according to claim 1, wherein the first component is sulfuric acid and the second component is hydrogen peroxide.

8. a sulfuric acid supply unit that supplies sulfuric acid to the treatment tank, and a hydrogen peroxide supply unit that supplies hydrogen peroxide to the treatment tank, The substrate processing apparatus according to claim 7 , wherein the control unit controls the supply of hydrogen peroxide to the processing bath after the temperature of the mixed liquid reaches the peak temperature and before immersion of the substrate in the mixed liquid is completed.

9. a temperature detection unit that detects a temperature of the mixed liquid; and a concentration detection unit that detects a concentration of the first component or the second component in the mixed liquid, The substrate processing apparatus according to any one of claims 1 to 4, wherein the control unit acquires at least one of a temperature profile and a concentration profile of the mixed liquid, and performs control to correct the immersion time of the substrate in the mixed liquid based on the acquired data.

10. a discharge unit that discharges the mixed liquid from the treatment tank, and a cooling unit that supplies a cooling liquid or a cooling gas to the circulation path, 5. The substrate processing apparatus according to claim 1, wherein the control unit controls supply of a cooling liquid or a cooling gas to the circulation path after the mixed liquid is discharged from the processing tank.

11. A substrate processing method comprising: storing a processing liquid for processing a substrate in a processing tank; extracting the processing liquid from the processing tank to a circulation path and returning the processing liquid from the circulation path to the processing tank; and immersing the substrate in the processing liquid stored in the processing tank, the treatment liquid is a mixed liquid obtained by mixing a first component and a second component, and is a mixed liquid that generates heat of mixing, a step of immersing a substrate in the mixed liquid before the temperature of the mixed liquid rises due to the heat of mixing and reaches a peak temperature.

12. 12. The substrate processing method according to claim 11, further comprising: heating the mixed liquid by a heating unit; and controlling the heating unit with different settings before and after the temperature of the mixed liquid reaches the peak temperature.

13. 13. The substrate processing method according to claim 11, further comprising: predicting a temperature profile of the mixed liquid as the temperature of the mixed liquid rises toward the peak temperature; and sending a command to a transport device to transport the substrate based on the predicted result before the temperature of the mixed liquid reaches the peak temperature.

14. 13. The substrate processing method according to claim 11, wherein the first component is sulfuric acid and the second component is hydrogen peroxide.

15. 15. The substrate processing method of claim 14, further comprising replenishing hydrogen peroxide to the processing bath after the temperature of the mixed solution reaches the peak temperature and before immersion of the substrate in the mixed solution is terminated.

16. 13. The substrate processing method according to claim 11, further comprising: acquiring at least one of a temperature profile and a concentration profile of the processing liquid; and correcting an immersion time of the substrate in the mixed liquid based on the acquired data.

17. 13. The substrate processing method according to claim 11, further comprising discharging the mixed liquid from the processing bath and storing the mixed liquid in the processing bath for each batch of substrates.

18. 13. The substrate processing method according to claim 11, further comprising cooling the circulation path after the mixed liquid is discharged from the processing tank and before the mixed liquid is stored in the processing tank again.

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