Light emitting device and method for manufacturing the same
The innovative design of surface-mounted LEDs with notched substrates and dual wiring electrodes, combined with precise resin application, addresses resin cost and defect issues, improving mountability and reducing solder-related problems.
Patent Information
- Application Number
- JP2022070834
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2022-04-22
- Publication Date
- 2026-01-09
- Estimated Expiration
- 2042-04-22
AI Technical Summary
Existing surface-mounted LEDs face issues with increased resin material usage, which leads to higher costs, and potential defects due to peeling at through-hole electrodes during dicing, as well as solder creep-up problems affecting mountability.
A light-emitting device design featuring an insulating substrate with notches and dual wiring electrodes, covered by resin films, and a manufacturing method that includes plating, etching, and resin application to prevent resin overflow and ensure electrode integrity during dicing.
The solution enhances mountability and reduces defects by minimizing resin usage and ensuring electrode stability during manufacturing, while maintaining effective solder connections.
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Abstract
Description
[Technical Field]
[0001] The present invention relates to a light emitting device including a semiconductor light emitting element and a method for manufacturing the same. [Background technology]
[0002] 2. Description of the Related Art Surface-mounted LEDs, also known as chip LEDs, are known as small light-emitting devices that use light-emitting elements such as light-emitting diodes (LEDs) as light sources.
[0003] For example, Patent Document 1 discloses a surface-mounted light-emitting diode as a light-emitting device having a structure in which a cathode electrode and an anode electrode formed on the upper surface of a glass epoxy (hereinafter also referred to as glass-epoxy) substrate on which a light-emitting diode element is mounted extend through through-hole electrodes provided at both ends of the glass-epoxy substrate to back electrodes formed on the back side of the glass-epoxy substrate.
[0004] Furthermore, in the surface-mounted light-emitting diode described in Patent Document 1, it is described that masking tape is attached to the upper surface of the through-hole electrode and a second resin is arranged over the entire upper surface of the glass epoxy substrate, including the area above the masking tape. [Prior art documents] [Patent documents]
[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2000-261041 Summary of the Invention [Problem to be solved by the invention]
[0006] In the surface-mounted light-emitting diode described in Patent Document 1, the masking tape is used to prevent the second resin from flowing into the through-hole electrodes when the second resin is formed.
[0007] As in the surface-mounted light-emitting diode described in Patent Document 1, if a second resin, which is a sealing resin, is formed on the entire top surface of a glass epoxy substrate made by impregnating glass fibers with epoxy resin and then subjecting it to a heat-curing treatment, the amount of resin material used will increase, which may increase costs.
[0008] However, if the light-emitting device is designed so that the resin material does not cover the through-hole electrodes in order to reduce the amount of resin material used, peeling may occur in the through-hole electrodes, cathode electrodes, anode electrodes, or back electrodes exposed on the dicing surface, which is the side surface of the light-emitting device, when the light-emitting device is separated into individual pieces by dicing, resulting in defects.
[0009] Furthermore, if multiple pairs of electrodes are formed on the glass epoxy substrate, when the light-emitting device is mounted on the mounting board, excessive solder may creep up onto the through-hole electrodes, and if the solder creeps up onto the glass epoxy substrate, there is a possibility that a die shear strength problem will occur due to insufficient solder on the mounting surface.
[0010] The present invention has been made in consideration of the above points, and aims to provide a light-emitting device and a method for manufacturing a light-emitting device that can improve the mountability of the light-emitting device while suppressing defects during manufacturing. [Means for solving the problem]
[0011] The light emitting device according to the present invention includes an insulating substrate having a substantially rectangular upper surface shape, one or more first notches formed on one side of a pair of opposing side surfaces, and one or more second notches formed on the other side of the pair of side surfaces; first wiring electrodes that cover areas extending from the inner side of each of the one or more first notches to the edges of each of the one or more first notches on the upper surface of the substrate and areas extending over the edges of each of the one or more first notches on the lower surface of the substrate; and first wiring electrodes that are spaced apart from each of the first wiring electrodes and that cover areas extending from the inner side of each of the one or more second notches to the edges of each of the one or more first notches on the upper surface of the substrate. The light-emitting element is characterized by having: a second wiring electrode covering an area extending over the edges of each of the plurality of second notches and an area extending over the edges of each of the one or more second notches on the underside of the substrate; a first resin film covering the surface of each of the first wiring electrodes in an area extending over the edges along the one or more first notches in a top view seen from a direction perpendicular to the top surface of the substrate; a second resin film covering the surface of each of the second wiring electrodes in an area extending over the edges along the one or more second notches in the top view; and a light-emitting element arranged on the substrate so as to be powered by the first wiring electrode and the second wiring electrode.
[0012] In addition, a manufacturing method for a light emitting device according to the present invention is characterized by including the steps of: preparing a substrate structure having an insulating substrate and copper foil layers formed on the upper and lower surfaces of the substrate; a through hole forming step of forming a plurality of through holes arranged in a plurality of rows on the upper surface of the substrate structure, each penetrating the substrate structure from the upper surface to the lower surface; a first plating step of forming a copper layer by plating on the surface of the copper foil layer and on the inner surfaces of the plurality of through holes; a wiring pattern forming step of etching the copper foil layer and the copper layer on the upper and lower surfaces of the substrate, respectively, to form a wiring pattern; a resin film forming step of forming a resin film covering areas along the outer edges of each of the plurality of through holes on the surface of the portion of the wiring pattern formed on the upper surface of the substrate structure; and a singulation step of cutting the substrate structure along dicing lines extending along the plurality of rows to separate each of the plurality of through holes. [Brief explanation of the drawings]
[0013] [Figure 1] 1 is a top view of a light emitting device according to an embodiment of the present invention. [Figure 2] 1 is a cross-sectional view of a light emitting device according to an embodiment of the present invention. [Figure 3] 1A to 1C are diagrams illustrating a manufacturing flow of a light emitting device according to an embodiment of the present invention. [Figure 4] 1A to 1C are diagrams illustrating a manufacturing flow of a light emitting device according to an embodiment of the present invention. [Figure 5A] 1 is a top view of a light emitting device according to an embodiment of the present invention during manufacturing. [Figure 5B] 5A to 5C are cross-sectional views of the light emitting device according to the embodiment of the present invention during manufacturing. [Figure 6A] 1 is a top view of a light emitting device according to an embodiment of the present invention during manufacturing. [Figure 6B] 5A to 5C are cross-sectional views of the light emitting device according to the embodiment of the present invention during manufacturing. [Figure 7] 1 is a top view of a light emitting device according to an embodiment of the present invention during manufacturing. [Figure 8] 5A to 5C are cross-sectional views of the light emitting device according to the embodiment of the present invention during manufacturing. [Figure 9]1 is a top view of a light emitting device according to an embodiment of the present invention during manufacturing. [Figure 10] 1 is a cross-sectional view showing an example of a mounted state of a light emitting device according to an embodiment of the present invention. [Figure 11A] FIG. 10 is a top view of a light emitting device according to a modified example of the present invention. [Figure 11B] FIG. 10 is a cross-sectional view of a light emitting device according to a modified example of the present invention. DETAILED DESCRIPTION OF THE INVENTION
[0014] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the following description and accompanying drawings, substantially the same or equivalent parts are designated by the same reference numerals. [Example]
[0015] The configuration of a light emitting device 100 according to an embodiment will be described with reference to Fig. 1 and Fig. 2. Fig. 1 is a top view of the light emitting device 100 according to the embodiment. Fig. 2 is a cross-sectional view of the light emitting device 100 taken along line 2-2 shown in Fig. 1.
[0016] 1, the first resin film 31 and the second resin film 32 are indicated by two-dot chain lines in order to clarify the structure and positional relationship of each element on the upper surface of the substrate 10. Also, in order to clarify the structure and positional relationship of each element on the upper surface of the substrate 10 in FIG. 1, the sealing member 60 (see FIG. 2) is not shown.
[0017] (Light-emitting device) Light emitting device 100 has a substrate 10 that has a generally rectangular top surface shape and has three first notches 13A, 13B, and 13C and three second notches 15A, 15B, and 15C formed on opposing sides. In the following description, notches 13A, 13B, and 13C may be collectively referred to as notches 13A-C, and notches 15A, 15B, and 15C may be collectively referred to as notches 15A-C.
[0018] The light emitting device 100 also has light emitting elements 41 , 43 , and 45 and protective elements 51 and 53 on the upper surface of the substrate 10 .
[0019] The light emitting device 100 also includes a sealing member 60 (see FIG. 2) that seals the light emitting elements 41, 43, and 45 and the protective elements 51 and 53 on the upper surface of the substrate 10.
[0020] In this embodiment, each component is disposed in each of a plurality of light emitting device forming regions arranged in a matrix on one flat substrate, and then the light emitting devices 100 are manufactured by dicing into individual pieces. Therefore, each side surface of the light emitting device 100 is a dicing surface cut by dicing.
[0021] This example describes a case where three light-emitting elements 41, 43, and 45 are connected in parallel in a light-emitting device 100. That is, the light-emitting device 100 of this example has three pairs of anode and cathode electrodes, and is a light-emitting device in which the three light-emitting elements 41, 43, and 45 can be controlled individually.
[0022] (substrate) The substrate 10 is an insulating substrate having a generally rectangular upper surface. When viewed from above, the substrate 10 has a planar shape in which a pair of opposing sides of a rectangle indicated by a dashed line are partially cut out. In other words, the substrate 10 has cutouts formed in portions of opposing side surfaces 10S1 and 10S2. In the following description, the center line of the substrate 10 that is parallel to the pair of sides is referred to as the center line CL.
[0023] The first notches 13A, 13B, and 13C and the second notches 15A, 15B, and 15C are formed at the center and both ends of each of the side surfaces 10S1 and 10S2 of the substrate 10, penetrating from the top surface to the bottom surface of the substrate 10.
[0024] The notches 13A and 15A, the notches 13B and 15B, and the notches 13C and 15C are formed at positions facing each other across the center line CL.
[0025] Notches 13A and 15A are formed in the center of each of side surfaces 10S1 and 10S2 in top view, and have a substantially semicircular shape cut out from rectangular substrate 10. Notches 13B and 13C and notches 15B and 15C are formed in the opposite ends of each of side surfaces 10S1 and 10S2 in top view, and have a fan-like shape cut out from rectangular substrate 10.
[0026] In this example, a flat plate made of glass epoxy was used as the substrate 10. In addition, in this example, a glass epoxy flat plate having a thickness of about 100 μm was used.
[0027] (wiring electrode) The wiring electrodes 23A, 23B, and 23C as first wiring electrodes and the wiring electrodes 25A, 25B, and 25C as second wiring electrodes are each a conductive wiring electrode formed on the surface of the substrate 10.
[0028] The wiring electrodes 23A, 23B, 23C and the wiring electrodes 25A, 25B, 25C are formed on the upper surface of the substrate 10, respectively, over the edges of the corresponding notches 13A-C and notches 15A-C.
[0029] Furthermore, wiring electrodes 23A, 23B, and 23C extend continuously from portions formed on the edges of each of cutouts 13A-C, via routing portions 23AW, 23BW, and 23CW, respectively, to bonding pad portions and element mounting portions provided in a central region along center line CL of substrate 10. Wiring electrodes 25A, 25B, and 25C have portions formed on the edges of each of cutouts 15A-C, bonding pad portions provided in a central region along center line CL of substrate 10, and routing portions 25AW, 25BW, and 25CW connecting these. Wiring electrodes 23A-C and wiring electrodes 25A-C are spaced apart from each other on the upper surface of substrate 10.
[0030] In addition, wiring electrodes 23A-25C and wiring electrodes 25A-25C are close to each other in each of the regions along the center line CL between notches 13A-13C and notches 15A-15C and the center line CL of substrate 10, and each extends from the region along the center line CL to both ends of the upper surface of substrate 10.
[0031] The wiring electrodes 23A-23C are adjacent to each other in a region along a straight line L1 that extends in the arrangement direction of the notches 13A-13C. Specifically, the routing portion 23AW is formed with extension portions EX that extend along the straight line L1 toward the wiring electrodes 23B and 23C, respectively.
[0032] Furthermore, the routing portions 23BW and 23CW of the wiring electrodes 23B and 23C are formed to extend along the straight line L1 in a direction from each end of the upper surface of the substrate 10 toward the wiring electrode 23A. In this way, the extension portions EX and routing portions 23AW-23CW of the wiring electrodes 23A-23C have portions that extend along the straight line L1, so that the wiring electrodes 23A-23C are configured close to each other in a region along the straight line L1 on the upper surface of the substrate 10.
[0033] The wiring electrodes 25A-25C are adjacent to each other in a region along a straight line L2 that extends in the arrangement direction of the notches 15A-15C. Specifically, the routing portion 25BW has an extension portion EX that extends along the straight line L2 toward the wiring electrode 25B. The routing portion 25CW also has an extension portion EX that extends along the straight line L2 toward the wiring electrode 25A.
[0034] Furthermore, routing portion 25BW of wiring electrode 25B is formed to extend along straight line L2 from each end of the upper surface of substrate 10 toward wiring electrode 25A. Furthermore, routing portion 25AW of wiring electrode 25A is formed so that a portion facing extension portion EX extends along straight line L2 toward extension portion EX of routing portion 25CW. In this way, since extension portions EX and routing portions 25AW-25CW of wiring electrodes 25A-C have portions extending along straight line L2, wiring electrodes 25A-25C are configured close to each other in a region along straight line L2 on the upper surface of substrate 10.
[0035] As described above, the wiring electrodes 23A-23C and 25A-25C are configured to be close to each other in the extension portion EX, the routing portions 23AW-23CW and the routing portions 25AW-25CW, respectively.
[0036] In addition, each of the wiring electrodes 23A-C and the wiring electrodes 25A-C extends from the respective edges of the notches 13A-C and 15A-C on the upper surface of the substrate 10, via the respective inner surfaces of the notches 13A-C and 15A-C, to the rear surface of the substrate 10.
[0037] The wiring electrodes 23A-C and 25A-C are formed around the entire edges of the notches 13A-C and 15A-C on the upper surface of the substrate 10. In other words, the wiring electrodes 23A-C and 25A-C are each formed so as to cover an area PA that extends around the edges of the notches 13A-C and 15A-C on the upper and lower surfaces of the substrate 10.
[0038] In this embodiment, wiring electrodes 23A-C and wiring electrodes 25A-C are each made of copper foil formed on the surface of the substrate 10 and copper plating formed on the copper foil surface on the upper and lower surfaces of the substrate 10. Wiring electrodes 23A-C and 25A-C are also made of copper plating formed on the inner surfaces of the notches so as to cover the inner surfaces. In this embodiment, the thickness of wiring electrodes 23A-C and wiring electrodes 25A-C from the surface of substrate 10 on the upper and lower surfaces of the substrate 10 is approximately 30 μm.
[0039] The shapes of the wiring electrodes 23A-C and the wiring electrodes 25A-C on the upper surface of the substrate 10 can be designed arbitrarily depending on the arrangement of the bonding pad portion and the element mounting portion in the central region along the center line CL of the substrate 10. Each of the wiring electrodes 23A-C and the wiring electrodes 25A-C may be formed over the edges of the cutouts 13A-C and the cutouts 15, and may extend to both ends of the upper surface of the substrate 10 while being close to each other in regions along a predetermined straight line in the direction along the center line CL between the cutouts 13A-C and the cutouts 15 and the bonding pad portion and the element mounting portion in the central region.
[0040] (light-emitting element) The light emitting elements 41, 43, and 45 are light emitting diodes (LEDs) made of semiconductor and arranged on the upper surface of the wiring electrode 23A in the central region of the upper surface of the substrate 10.
[0041] In this embodiment, the light-emitting element 41 is an AlGaInP-based LED that emits red light from its upper surface. Furthermore, in this embodiment, the light-emitting elements 43 and 45 are InGaN-based LEDs that emit green and blue light from their upper surfaces, respectively. The light-emitting elements 41, 43, and 45 are each bonded to the upper surface of the wiring electrode 23A via a conductive element bonding layer made of a material such as silver (Ag) paste (not shown).
[0042] The light-emitting element 41 has an anode electrode on its lower surface and a cathode electrode pad on its upper surface. In the light-emitting element 41, the anode electrode on its lower surface is electrically connected to the wiring electrode 23A. In addition, in the light-emitting element 41, the cathode electrode pad on its upper surface is electrically connected to the wiring electrode 25A by a bonding wire 41K. Therefore, the light-emitting element 41 is configured to receive power via the wiring electrode 23A and the wiring electrode 25A.
[0043] The light emitting element 43 has a cathode electrode pad and an anode electrode pad on its upper surface. In the light emitting element 43, the cathode electrode pad and the wiring electrode 23B are connected by a bonding wire 43K, and the anode electrode pad and the wiring electrode 25B are connected by a bonding wire 43A. Therefore, the light emitting element 41 is configured to receive power via the wiring electrode 23B and the wiring electrode 25B.
[0044] Like the light-emitting element 43, the light-emitting element 45 has a cathode electrode pad and an anode electrode pad on its upper surface. In the light-emitting element 45, the cathode electrode pad and the wiring electrode 23C are connected by a bonding wire 45K, and the anode electrode pad and the wiring electrode 25C are connected by a bonding wire 45A. Therefore, the light-emitting element 41 is configured to receive power via the wiring electrodes 23C and 25C. The light-emitting elements 43 and 45 are bonded adjacent to the light-emitting element 41 to the upper surface of the wiring electrode 23A via an element connection layer (not shown). The bonding surfaces of the light-emitting elements 43 and 45 are insulating and electrically insulated from the wiring electrode 23A.
[0045] (protective element) The protection elements 51 and 53 are reverse voltage protection elements such as Zener diodes, etc. The protection elements 51 and 53 each have a cathode electrode on the bottom surface and an anode electrode pad on the top surface.
[0046] In the protection element 51, the cathode electrode on the lower surface is electrically connected to the wiring electrode 23B. In addition, in the protection element 51, the anode electrode pad on the upper surface is electrically connected to the wiring electrode 25B by a bonding wire 51A.
[0047] In the protective element 53, the cathode electrode on the lower surface is electrically connected to the wiring electrode 23C. In the protective element 51, the anode electrode pad on the upper surface is electrically connected to the wiring electrode 25C by a bonding wire 51A.
[0048] Therefore, the protective element 51 and the protective element 53 are connected in parallel with the light emitting elements 43 and 45, respectively, between the wiring electrodes 23B and 23C and the wiring electrodes 25B and 25C, with opposite polarities.
[0049] (First resin film, second resin film, and third resin film) The first resin film 31 (indicated by the two-dot chain line in the drawing) is an insulating film made of an insulating resin material such as epoxy resin. When viewed from above, the first resin film 31 is formed so as to close the notches 13A-C, respectively, and to cover the wiring electrodes 23A, 23B, and 23C around the edges of the notches 13A, 13B, and 13C on the upper surface of the substrate 10.
[0050] The first resin film 31 further includes a strip-shaped portion 31B extending in a strip shape in a region along the straight line L1. The strip-shaped portion 31B covers the extension portions EX and routing portions 23AW-CW of the wiring electrodes 23A-C formed in the region along the straight line L1 and the upper surface of the substrate 10. That is, in the region along the straight line L1, the first resin film 31 uses the strip-shaped portion 31B to cover the upper surface of each of the wiring electrodes 23A-C and fill the gaps between each of the wiring electrodes 23A-C.
[0051] The second resin film 32 (shown by the two-dot chain line in the drawing) is a film made of an insulating resin material such as epoxy resin, similar to the first resin film 31. The second resin film 32 is formed so as to close the notches 15A-C, respectively, and to cover the wiring electrodes 25A, 25B, and 25C around the edges of the notches 15A, 15B, and 15C on the upper surface of the substrate 10, when viewed from above.
[0052] The second resin film 32 further includes a strip-shaped portion 32B extending in a strip shape in a region along the straight line L2. The strip-shaped portion 32B covers the extension portions EX and routing portions 25AW-CW of the wiring electrodes 25A-C formed in the region along the straight line L2 and the upper surface of the substrate 10. That is, in the region along the straight line L2, the second resin film 32 uses the strip-shaped portion 32B to cover the upper surface of each of the wiring electrodes 25A-C and fill the gaps between each of the wiring electrodes 25A-C.
[0053] Furthermore, each of the first resin film 31 and the second resin film 32 covers an area on the upper surface of the substrate 10 of the upper surface of the wiring electrodes 23A-C and the wiring electrodes 25A-C that corresponds to the area PA of the substrate 10 that is covered by each of the wiring electrodes 23A-C and the wiring electrodes 25A-C.
[0054] 2, the first resin film 31 and the second resin film 32 are inserted from above into the notches 13A-C and 15A-C, respectively. That is, the first resin film 31 and the second resin film 32 cover the upper end portions of the wiring electrodes 23A, 23B, 23C and the wiring electrodes 25A, 25B, 25C in the notches 13A, 13B, 13C and the notches 15A, 15B, 15C, respectively.
[0055] 1, in the light-emitting device 100, the first resin film 31 and the second resin film 32 are each formed so as to expose a portion of the outer peripheral edge of each of the wiring electrodes 23A-C and the wiring electrodes 25A-C near the periphery of the area PA of the notches 13A-C and the notches 15A-C. This is because, even when an opaque solder resist ink is used for the first resin film 31 and the second resin film 32, the positions of the wiring electrodes 23A-C and the wiring electrodes 25A-C and the orientation of the light-emitting device 100 can be visually confirmed in the light-emitting device 100 after manufacture.
[0056] 2, the third resin film 33 is formed on the lower surface of the substrate 10. The third resin film 33 is made of the same material as the first resin film 31 and the second resin film 32. The third resin film 33 is formed on the lower surface of the substrate 10 in a pattern that exposes bonding regions of the wiring electrodes 23A-C and 25A-C with bonding members to the mounting substrate.
[0057] In this embodiment, photosensitive solder resist ink (green resist) was used for the first resin film 31, the second resin film 32, and the third resin film 33. The first resin film 31 and the second resin film 32 are made of a light-blocking material, which can prevent unintended light from the light-emitting elements 41, 43, and 45. This allows the light-emitting device 100 to achieve a more desired light distribution. The first resin film 31 and the second resin film 32 may be made of a light-absorbing or light-reflective material, such as silicon. In this embodiment, the first resin film 31, the second resin film 32, and the third resin film 33 are each formed to a thickness of approximately 20 μm from the top surface of the substrate 10.
[0058] In addition, nickel (Ni) and gold (Au) are laminated in order on the surfaces of the wiring electrodes 23A-C and the wiring electrodes 25A-C exposed from the first resin film 31, the second resin film 32, and the third resin film 33.
[0059] (Sealing member) The sealing member 60 is made of a light-transmitting resin material such as silicone resin, epoxy resin, or acrylic resin, and is formed on the upper surface of the substrate 10 in a region along the center line CL.
[0060] In this embodiment, the sealing member 60 is formed in a region between the vicinity of the straight line L1 and the vicinity of the straight line L2 on the upper surface of the substrate 10, covers the upper surface of the substrate 10 and the upper surfaces of the wiring electrodes 23A-C and 25A-C, and seals the light emitting elements 41, 43, 45 and the protective elements 51 and 53. In other words, the lower end of the side surface of the sealing member 60 in the direction along the center line CL is on the upper surfaces of the strip portions 31B and 32B of the first resin film 31 and the second resin film 32 on the upper surface of the substrate 10 in the vicinity of the straight line L1 and the straight line L2.
[0061] As described above, by positioning the lower end of the side surface of the sealing member 60 near the upper surfaces of the strip portions 31B and 32B of the first and second resin films 31 and 32, respectively, and on the lines L1 and L2, leakage in the direction of each notch in the sealing member 60 can be suppressed in the manufacturing method described below.
[0062] (Method of manufacturing a light-emitting device) Next, a method for manufacturing the light emitting device 100 of the embodiment will be described with reference to FIGS.
[0063] 3 and 4 are diagrams showing a manufacturing flow of a light emitting device 100 according to an embodiment of the present invention. Also, FIGS. 5 to 9 show cross-sectional views of the light emitting device 100 at each step of the manufacturing procedure shown in FIGS. 3 and 4. Also, FIGS. 5A, 6A, 7, and 9 show top views of a light emitting device formation region 1 and its periphery. Also, FIGS. 5B, 6B, and 8 show cross sections corresponding to line 2-2 shown in FIG. 1 in a light emitting device formation region 1 and its periphery.
[0064] In the following description of the manufacturing method, the notches 13A-C and 15A-C in the substrate 10 before completion of step S204 (singulation step) will be referred to as through holes 13A-C and 15A-C, respectively.
[0065] (Step S101) First, a process for preparing a substrate structure 10M (see FIGS. 5A and 5B) to be used in manufacturing is performed (step S101, substrate structure preparation process). The substrate structure 10M is a substrate formed by pressing a copper foil CU1 onto the upper surface of a flat glass epoxy substrate 10 having a rectangular upper surface shape and a copper foil CU2 onto the lower surface. Dicing lines DL1 and DL2 are dicing lines used when dividing the light emitting devices 100 into individual pieces. That is, the light emitting devices 100 are formed by dividing a structure including the substrate structure 10M along the dicing lines DL1 and DL2 into individual pieces. The copper foils CU1 and CU2 are, for example, press-bonded to the glass epoxy substrate and have a thickness of approximately 18 μm.
[0066] (Step S102) Next, as shown in FIGS. 5A and 5B, through holes that become notches 13A-C and 15A-C are formed along dicing lines DL1 in each light-emitting device formation region (step S102, notch forming process). In this step, through holes are formed along each dicing line DL1. Through holes 13B, 13C, 15B, and 15C are formed at positions where dicing lines DL1 and DL2 intersect, and through holes 13A and 15A are formed at the midpoints of adjacent dicing lines DL2. Each of the through holes 13A-C and 15A-C is formed by penetrating the copper foil CU1, the substrate structure 10M, and the copper foil CU2 from above using a drill or the like.
[0067] (Step S103) 6A and 6B, copper plating is applied to the inner surfaces of the through holes of the substrate structure 10M and to the surfaces of the copper foils CU1 and CU2 to form a copper layer CU3 that integrally covers the surface of the substrate structure 10M (step S103, first plating step). In this step, first, copper electroless plating is applied to the substrate structure 10M to form an electroless plated layer on the surfaces of the copper foils CU1 and CU2 and the inner surfaces of the through holes of the substrate structure 10M. Next, copper electroplating is applied to this substrate structure 10M to form an electrolytic plated layer on the surface of the electroless plated layer, thereby forming the copper layer CU3. The copper layer CU3 includes copper foils CU1 and CU2 as an underlayer on the upper and lower surfaces of the substrate 10.
[0068] (Step S104) 7, the copper layer CU3 is etched to form wiring electrodes 23A-C and wiring electrodes 25A-C in each light-emitting device formation region (step S104, wiring pattern formation process). In this step, a resist mask was first formed on the surface of the copper layer CU3 of the substrate structure 10M to form the above-mentioned wiring pattern. Then, the copper layer CU3 exposed from the resist mask was etched until the surface of the substrate structure 10M was exposed, forming each of the wiring electrodes 23A-C and 25A-C. After that, the resist mask on the surface of each wiring electrode was removed.
[0069] At this time, the wiring electrodes 23A-C and 25A-C facing each other between adjacent light emitting device forming regions were formed so as to be continuous.
[0070] (Step S105) 8, a photosensitive resin RL is applied to the entire upper surface of the substrate structure 10M (step S105, resin film application step). In this step, a screen printing machine is used to apply the resin RL all at once to the upper surface of the substrate structure 10M by squeegeeing from above. At this time, the viscosity, application amount, or squeegeeing conditions of the resin RL are set so that the resin RL is applied (the resin RL penetrates) to the upper end portions of the wiring electrodes 23A, 23B, and 23C and the wiring electrodes 25A, 25B, and 25C in the notches 13A, 13B, and 13C and the notches 15A, 15B, and 15C, respectively.
[0071] (Step S106) 9, the resin RL applied to the substrate structure 10M is exposed to light to form a first resin film 31 and a second resin film 32 (step S106, resin film pattern formation step). In this step, an exposure device is used to irradiate ultraviolet light through a photomask from above the substrate structure 10M, and the resin RL is exposed to the shapes of the first resin film 31 and the second resin film 32 in each light emitting device formation region.
[0072] At this time, the photomask has a pattern that allows ultraviolet light to be irradiated onto the resin RL in the areas of the notches 13A-C and 15A-C in the resin RL and the area covering the area PA of the substrate 10.
[0073] Furthermore, the photomask is patterned so that ultraviolet light is irradiated onto the resin RL so that the strip portions 31B and 32B of the first resin film 31 and the second resin film 32 continue in the areas along the straight lines L1 and L2 to the light emitting device formation areas at both ends of each row of multiple light emitting device formation areas aligned in the direction along the dicing line DL1 where each notch is formed.
[0074] Thereafter, the resin RL in the unexposed area was removed to form a first resin film 31 and a second resin film 32.
[0075] In this embodiment, the case where step S105 (resin film application process) is controlled so that the resin RL is applied to the upper end portions of the wiring electrodes 23A-C and 25A-C in the notches 13A-C and 15A-C has been described.
[0076] In step S106 (resin film pattern forming process), the depth of focus of the exposure tool may be adjusted so that the resin RL is exposed to light up to a desired depth range.
[0077] Furthermore, following step S106 (resin film pattern formation process), a third resin film 33 was formed on the lower surface of the substrate structure 10M. To form the third resin film 33, the resin RL was applied using a metal mask or the like having an opening in the shape of the third resin film 33 during squeegeeing.
[0078] (Step S107) Next, a plating layer is formed by sequentially stacking Ni and Au on the surfaces of the wiring electrodes 23A-C and the wiring electrodes 25A-C exposed from the respective resin films of the substrate structure 10M (step S107, second plating step). In this step, a Ni layer is formed on the surfaces of the wiring electrodes 23A-C and the wiring electrodes 25A-C by electrolytic plating, and then an Au layer is formed on the surface of the Ni layer.
[0079] (Step S201) Next, as shown in FIG. 1, light emitting elements 41, 43, and 45 and protective elements 51 and 53 are bonded to predetermined positions on the upper surface of each light emitting device forming region (step S201, element bonding process). In this step, first, substrate structure 10M is set in a die bonding device, and raw material paste for a conductive element bonding layer is applied to the element mounting portion on the upper surface of each of wiring electrodes 23A-C. Next, each element is placed on the raw material paste applied to each element mounting portion with the electrode pad facing upward. Thereafter, substrate structure 10M is heated to harden the raw material paste, thereby bonding each element to wiring electrode 23.
[0080] (Step S202) Next, in each light-emitting device formation region, bonding wires are formed to connect the electrode pads of each element to the respective wiring electrodes (step S202, wire bonding process), as shown in Fig. 1. In this step, the substrate structure 10M is set in a bonding device, and each bonding wire is formed.
[0081] In the light-emitting element 41, first, a metal bump was formed on the electrode pad of the light-emitting element 41 using a metal wire such as Au, and then the metal wire was joined to the bonding pad portion of the wiring electrode 25A and the metal bump to form a bonding wire 41K. Subsequently, bonding wires 43A, 43K, 45A, 45K, 51K, and 53K were formed in the same manner.
[0082] (Step S203) 2, a sealing member 60 for sealing each of the light-emitting elements and the protective elements is formed (step S203, sealing member forming step). In this step, the substrate structure 10M is set in a mold of a molding device, and a raw material resin for the sealing member 60 is injected and cured to form the sealing member 60.
[0083] In this example, a mold was used in which, for each row of a plurality of light-emitting device formation regions aligned in a direction along dicing line DL1 where each notch is formed, recesses were formed in the shape of sealing member 60 continuously extending to the light-emitting device formation regions at both ends of the row. That is, the ends of the recesses of the mold on the top surface side of substrate structure 10M are located near straight lines L1 and L2 that extend across the plurality of light-emitting device formation regions aligned in the row direction.
[0084] As a result, when the substrate structure 10M is pressed with a mold, the elasticity of the first and second resin films 31 and 32 allows the mold and the first and second resin films 31 and 32 to adhere tightly to each other even in the gaps between the wiring electrodes near the lines L1 and L2. Therefore, when the raw material resin of the sealing member 60 is injected, it is possible to prevent the raw material resin of the sealing member 60 from leaking out of the gaps.
[0085] (Step S204) 1, dicing is performed along dicing lines DL1 and DL2 to separate the light emitting devices 100 (step S204, singulation process). In this step, the substrate structure 10M is attached to a dicing sheet and set in a dicing device, and the dicing blade is rotated and moved in a predetermined direction along the dicing lines DL1 and DL2 to cut the substrate structure 10M. That is, dicing is performed so as to separate the notches 13A-C and the notches 15A-C formed on the dicing line DL1 of each substrate structure 10M.
[0086] In the manufacturing method of the light emitting device 100 described above, the first resin film 31 and the second resin film 32 are formed so as to cover the upper surfaces of the wiring electrodes 23A-C, 25A-C on the dicing lines DL1 and DL2, and to fit into the interiors of the notches 13A-C and 15A-C from above, respectively.
[0087] In other words, each of the first resin film 31 and the second resin film 32 is formed so as to cover the region on the upper surface of the wiring electrode corresponding to the region PA of the substrate 10, particularly the edges of the region PA along the edges 10S1 and 10S2 after the light emitting device 100 is singulated. That is, the first resin film 31 and the second resin film 32 hold down the wiring electrode.
[0088] This makes it possible to prevent the wiring electrodes from being peeled off from the substrate 10 by a dicing blade when dicing the light emitting device 100 into individual pieces. As described above, the first resin film 31 and the second resin film 32 are formed so as to fit into the notches in the completed light emitting device 100, and into the through holes during manufacturing. This prevents the first resin film 31 and the second resin film 32 from peeling off during manufacturing, and prevents the loss of the effect of preventing peeling of the wiring electrodes due to peeling of the resin films. This makes it possible to prevent defects during manufacturing of the light emitting device 100.
[0089] (Light emitting device mounting state) 10 is a cross-sectional view of the light emitting device 100 according to the embodiment in a mounted state, taken along line 2-2 of the light emitting device 100 shown in FIG.
[0090] The mounting substrate 200 is a substrate on which the light emitting device 100 is mounted. In a cross section taken along line 2-2, the mounting substrate 200 has a mounting electrode 201 and a mounting electrode 202. The bonding members 203 and 204 are made of a paste containing solder or the like.
[0091] The bonding members 203 and 204 are heated and melted on the upper surfaces of the mounting electrodes 201 and 202 of the mounting substrate 200 to bond the mounting substrate 200 and the light emitting device 100 together.
[0092] When melted, the bonding members 203 and 204 wet and spread over the surfaces of the wiring electrodes 23A and 25A of the light emitting device 100. That is, the bonding members 203 and 204 creep up along the inner surfaces of the wiring electrodes 23A and 25A formed on the inner surfaces of the notches 13A and 15A.
[0093] In light emitting device 100, first resin film 31 and second resin film 32 made of solder resist, which is a material with low affinity for the metal constituting molten bonding members 203 and 204, respectively close notches 13A-C and notches 15A-C of substrate 10. As a result, light emitting device 100 and its manufacturing method prevent molten bonding members 203 and 204 from creeping up to the upper surface via the inner surfaces of the notches when light emitting device 100 is mounted on a mounting board, thereby making it possible to prevent defects such as short circuits caused by this.
[0094] Furthermore, the first resin film 31 and the second resin film 32 prevent the bonding members 203 and 204 from creeping up excessively, so that fillets of the bonding members 203 and 204 having large thicknesses can be formed.
[0095] It is preferable that the first and second resin films 31, 32 extend into the notches up to a distance D of 1 / 3 to 1 / 2 of the thickness T from the upper end to the lower end of the wiring electrodes 23A-C, 25A-C (T / 3≦D≦T / 2).
[0096] This is because if the distance D is too large, i.e., if the resin film penetrates too far into the notch, the area of each wiring electrode exposed on the inner surface of each of the notches 13A-C and 15A-C will be small, which may reduce the bonding strength with the bonding material (solder) when the light emitting device 100 is mounted.
[0097] Conversely, if the distance D is too small, i.e., if the resin film does not penetrate into the notch sufficiently, the first and second resin films 31, 32 will be more likely to peel off, and the above-mentioned effect of preventing wiring peeling and the effect of preventing the bonding material from creeping up may be lost.
[0098] As described above, according to the light emitting device 100 of this embodiment, the light emitting device 100 after mounting can ensure high die shear strength, and it is possible to improve mountability.
[0099] (Variation) Next, a modified light emitting device 100A will be described. Fig. 11A is a top view of the modified light emitting device 100A. Fig. 11B is a cross section of the light emitting device 100A taken along line 2-2 in Fig. 1.
[0100] The light emitting device 100A of the modified example has basically the same configuration as the light emitting device 100 of the embodiment.
[0101] The light emitting device 100A of the modified example differs from the embodiment in that the first resin film 71 and the second resin film 72 do not close the notches 13A-C and 15A-C when viewed from above.
[0102] The modified light emitting device 100A can be realized, for example, by forming through holes from above using a drill or the like to penetrate through specified regions of each of the through holes 13A-C and 15A-C of the substrate structure 10M after step S203 (sealing member formation process) shown in Figure 4.
[0103] The modified light emitting device 100A has a structure in which the first and second resin films 71, 72 are not provided at the four corners of each light emitting device formation region of the substrate structure 10M when viewed from above, and therefore chipping of the first and second resin films 71, 72 can be suppressed in step S204 (singulation process).
[0104] Even when the first resin film 71 and the second resin film 72 are formed as described above, the same effects as those of the embodiment can be achieved.
[0105] Therefore, according to the light emitting device 100B of Example 2, it is possible to improve the mountability of the light emitting device 100B when it is mounted, while suppressing defects during the manufacturing of the light emitting device 100B.
[0106] In the embodiment and the modified example, the notches 13A-C and the notches 15A-C are semicircular and fan-shaped, respectively, but the shapes of the notches are not limited to these. The notches 13A-C and the notches 15A-C may be semi-elliptical and quarter-elliptical, or semi-elliptical and quarter-elliptical, respectively.
[0107] In the examples and modifications, the first resin film 31 and the second resin film 32 are formed of solder resist ink, but a transparent or semi-transparent resin film may be used instead. In this case, the first resin film 31 and the second resin film 32 may be formed on the entire upper surface of the substrate 10, excluding the element mounting portion and bonding portion of each of the wiring electrodes 23A-C and the wiring electrodes 25A-C.
[0108] As such, the described embodiments are not intended to limit the scope of the invention. The described embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These modifications are also included within the scope and spirit of the invention, and are also included in the inventions described in the claims and their equivalents. [Explanation of symbols]
[0109] 100 Light-emitting device 10 Substrate 13, 15 Notch 23, 25 Wiring electrode 31, 71, 81 First resin film 32, 72, 82 Second resin film 41, 43, 45 Light-emitting element 51, 53 Protection element 60 Sealing member 200 Mounting Board 201, 202 Mounting electrodes 203, 204 Joint members
Claims
1. an insulating substrate having a generally rectangular top surface shape, one or more first notches formed on one side of a pair of opposing side surfaces, and one or more second notches formed on the other side of the pair of side surfaces; a first wiring electrode covering a region extending from an inner surface of each of the one or more first cutouts to an edge of each of the one or more first cutouts on the upper surface of the substrate and a region extending to an edge of each of the one or more first cutouts on the lower surface of the substrate; a second wiring electrode that is spaced apart from each of the first wiring electrodes and that covers a region extending from an inner side surface of each of the one or more second cutouts to an edge of each of the one or more second cutouts on the upper surface of the substrate and a region extending to an edge of each of the one or more second cutouts on the lower surface of the substrate; a first resin film covering a surface of each of the first wiring electrodes in a region extending along an edge along the one or more first notches in a top view seen from a direction perpendicular to the top surface of the substrate; a second resin film covering a surface of each of the second wiring electrodes in a region extending along an edge along the one or more second notches in the top view; a light-emitting element disposed on the substrate so as to be powered by the first wiring electrode and the second wiring electrode; a sealing member formed on an upper surface of the substrate to seal the light-emitting element and to expose each of regions extending along edges along the one or more first notches on a surface of each of the first wiring electrodes and each of regions extending along edges along the one or more second notches on a surface of each of the second wiring electrodes; the first resin film has a strip-shaped portion extending in a strip-like shape from one end of the substrate to both ends of the substrate in a direction along the pair of side surfaces of the substrate between the one or more first notches and the light-emitting element, the second resin film has a strip-shaped portion extending in a strip shape from one end of the substrate to the other end of the substrate in a direction along the pair of side surfaces of the substrate between the one or more second notches and the light-emitting element, each of the first wiring electrodes has a portion extending along a strip portion of the first resin film below the first resin film; each of the second wiring electrodes has a portion extending along the strip portion of the second resin film below the second resin film; A light-emitting device characterized in that the sealing member is formed so that one of its opposing side ends is arranged on the strip portion of the first resin film and the other is arranged on the strip portion of the second resin film.
2. the first resin film extends to a surface of a portion formed on an inner surface of each of the one or more first notches of each of the first wiring electrodes, 2. The light emitting device according to claim 1, wherein the second resin film extends to the surface of a portion of each of the second wiring electrodes formed on an inner surface of each of the one or more second cutouts.
3. The light-emitting device according to claim 1, characterized in that each of the first resin film and the second resin film is formed so as to cover the one or more first notches and the one or more second notches, respectively, when viewed from the top.
4. the first resin film covers an area from an upper end of a portion of each of the first wiring electrodes formed on an inner surface of the one or more first notches to a region at a distance of 1 / 3 to 1 / 2 of a thickness from the upper end to the lower end of the first wiring electrode, The light-emitting device described in claim 2, characterized in that the second resin film covers an area from the upper end of a portion formed on the inner surface of each of the one or more second notches of each of the second wiring electrodes to a region at a distance of 1 / 3 to 1 / 2 of the thickness from the upper end to the lower end of the second wiring electrode.
5. each of the first wiring electrode and the second wiring electrode is made of copper; 2. The light emitting device according to claim 1, wherein the first resin film and the second resin film are formed so as to be in contact with copper of the first wiring electrode and the second wiring electrode.
6. 6. The light-emitting device according to claim 5, wherein nickel and gold are sequentially laminated on the surfaces of the first wiring electrode and the second wiring electrode exposed from the first resin film and the second resin film, respectively.
7. the one or more first notches and the first wiring electrodes, and the one or more second notches and the second wiring electrodes are formed on the pair of side surfaces of the substrate so as to form pairs with each other; 2. The light emitting device according to claim 1, wherein a plurality of the light emitting elements are arranged on the substrate in accordance with the number of the pairs.
Citation Information
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