Asymmetric exhaust pumping plate design for semiconductor processing chambers

Abstract

An exemplary semiconductor processing chamber may include a chamber body including a sidewall and a base. The chamber may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate. The substrate support may include a shaft coupled to the support platen. The chamber may include a foreline conduit offset from the center of the base for exhausting gas from the chamber body, and an exhaust space coupled to the foreline conduit. The chamber may include a pumping plate including a central aperture through which the shaft extends, the pumping plate further including a plurality of outlet apertures for directing at least a portion of the gas from the chamber body to the exhaust space. The plurality of outlet apertures may be positioned opposite the foreline conduit to reduce gas flow non-uniformities.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority to U.S. patent application Ser. No. 16 / 902,911, entitled "Asymmetric Exhaust Pumping Plate Design for Semiconductor Processing Chambers," filed June 16, 2020, the entire contents of which are incorporated herein by reference.

[0002]

[0002] The present technology relates to components and apparatus for semiconductor manufacturing. More particularly, the present technology relates to processing chamber components and other semiconductor processing equipment. [Background technology]

[0003]

[0003] Integrated circuits are made possible by processes that produce intricately patterned layers of material on the surface of a substrate (e.g., a semiconductor wafer). Producing patterned materials on a substrate requires controlled methods for forming and removing material. Precursors are often supplied to a processing region and distributed to uniformly deposit or etch material on the substrate. Many aspects of a processing chamber can affect process uniformity, such as the uniformity of process conditions within the chamber, the uniformity of flow through components, and other process and component parameters. Even slight inconsistencies across the substrate can affect the formation or removal process.

[0004]

[0004] Therefore, there is a need for improved systems and methods that can be used to manufacture high quality devices and structures. These and other needs are addressed by the present technology. Summary of the Invention

[0005] An exemplary semiconductor processing chamber may include a chamber body including a sidewall and a base. The chamber may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate. The substrate support may include a shaft coupled to the support platen. The chamber may include a foreline conduit offset from the center of the base for exhausting gas from the chamber body, and an exhaust space coupled to the foreline conduit. The chamber may include a pumping plate including a central aperture through which the shaft extends and further including a plurality of outlet apertures for directing at least a portion of the gas from the chamber body to the exhaust space. The plurality of outlet apertures may be positioned opposite the foreline conduit to reduce gas flow non-uniformity.

[0006] In some embodiments, the pumping plate may be circular, and the one or more outlet apertures may include a plurality of outlet apertures arranged along an arcuate path opposite the foreline conduit and defined along a first radius relative to a center of the pumping plate. The foreline conduit of the base may be positioned along the first radius. The plurality of outlet apertures may be arranged symmetrically about a first axis of the pumping plate extending along a diameter of the pumping plate. The plurality of outlet apertures may be arranged asymmetrically along a second axis of the pumping plate, the second axis being perpendicular to the first axis. The arcuate path may have an arc angle between approximately 30 degrees and 345 degrees. The first axis may be parallel to the exhaust space. A gap between an edge of the central aperture and an outer diameter of the shaft may be approximately 1 cm or less, and the gap may be configured to direct another portion of the gas from the chamber body to the exhaust space. The gap may be approximately 1 mm or less. The exhaust space may be formed between the base and the pumping plate. The base may include a first extension extending toward the pumping plate. The pumping plate may include a second extension extending toward the base. The first extension and the second extension may be configured to at least partially vertically overlap to restrict gas flow from the chamber body to the foreline conduit through the central aperture. A minimum vertical gap between the base and the pumping plate may be approximately 2 mm or less. A minimum vertical gap between the base and the pumping plate may be approximately 1.6 mm.

[0007] Some embodiments of the present technology may include a pumping plate for exhausting gas from a chamber body of a semiconductor processing system. The pumping plate may include a central aperture for receiving a shaft extending through the chamber body. The central aperture may be sized to minimize a gap between an edge of the central aperture and an outer diameter of the shaft to about 1 cm or less. The central aperture may be configured to provide a first path for directing gas from the chamber body toward an exhaust space. The pumping plate may define a plurality of outlet apertures for providing a plurality of second paths for directing gas from the chamber body toward the exhaust space. The plurality of outlet apertures may be positioned along the pumping plate at one or more locations configured to be opposite an outlet of the chamber body when the pumping plate is disposed within the chamber body.

[0008] In some embodiments, the pumping plate may be circular, and the plurality of outlet apertures may be arranged along an arcuate path opposite the outlet of the chamber body and defined along a radius relative to a center of the pumping plate. The plurality of outlet apertures may be arranged symmetrically about a first axis of the pumping plate extending along a diameter of the pumping plate. The plurality of outlet apertures may be arranged asymmetrically along a second axis of the pumping plate, and the second axis may be perpendicular to the first axis.

[0009] Some embodiments of the present technology may include a method of semiconductor processing. The method may include flowing a carbon-containing precursor into a processing chamber. The processing chamber may include a faceplate and a substrate support on which a substrate is disposed. The substrate support may extend through a base of the processing chamber. The substrate support may include a support platen on which the substrate is disposed and a shaft coupled to the support platen. The method may include generating a plasma of the carbon-containing precursor in the processing chamber. The method may include depositing a carbon-containing material on the substrate. The method may include exhausting gas from a chamber body of the processing chamber through a pumping plate through which the shaft extends. The pumping plate may include one or more outlet apertures for directing at least a portion of the gas from the chamber body to an exhaust space coupled to a foreline conduit in the base. The one or more outlet apertures may be positioned along the pumping plate at one or more locations opposite the foreline conduit to reduce non-uniformity in the gas flow in the exhaust space.

[0010] In some embodiments, the pumping plate may be circular. The one or more outlet apertures may be a plurality of outlet apertures arranged along an arcuate path on opposite sides of the foreline conduit and defined along a first radius relative to a center of the pumping plate. The plurality of outlet apertures may be arranged symmetrically about a first axis of the pumping plate extending along a diameter of the pumping plate. The plurality of outlet apertures may be arranged asymmetrically along a second axis of the pumping plate. The second axis may be perpendicular to the first axis. The arcuate path may have an arc angle between approximately 30 degrees and 345 degrees.

[0011]

[0011] Such techniques may provide numerous advantages over conventional systems and techniques. For example, embodiments of the present techniques may improve the uniformity of gas flow across a substrate. In addition, components may allow modification to accommodate any number of chambers or processes. These and other embodiments, along with their many advantages and features, are described in more detail below and in the accompanying drawings.

[0012]

[0012] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the drawings. [Brief explanation of the drawings]

[0013] [Figure 1]

[0013] A top view of an exemplary processing system according to some embodiments of the present technology is shown. [Figure 2]

[0014] 1 shows a schematic cross-sectional view of an exemplary plasma system, in accordance with some embodiments of the present technique; [Figure 3]

[0015] 1 shows a schematic cross-sectional view of an exemplary processing chamber, in accordance with some embodiments of the present technique; [Figure 4A]

[0016] 1 illustrates a top view of an exemplary embodiment of a pumping plate. [Figure 4B] 1 illustrates a top view of an exemplary embodiment of a pumping plate. [Figure 5]

[0017] FIG. 4 is an enlarged cross-sectional view of the system of FIG. 3 showing the shaft extending through the pumping plate and base via a central aperture. [Figure 6]

[0018] 1 illustrates operations of an exemplary method of semiconductor processing, in accordance with some embodiments of the present technique. DETAILED DESCRIPTION OF THE INVENTION

[0014]

[0019] Some of the drawings are included as schematic diagrams. It should be understood that the drawings are for illustrative purposes and should not be considered to scale unless expressly stated to be to scale. Furthermore, as schematic diagrams, the drawings are provided to aid in understanding and may not include all aspects or information compared to realistic depictions and may include exaggerated material for illustrative purposes.

[0015]

[0020] In the accompanying drawings, similar components and / or features may have the same reference numerals. Furthermore, various components of the same type may be distinguished according to the reference numeral, with a letter distinguishing between the similar components. When only a first reference numeral is used in this specification, the description is applicable to any of the similar components having the same first reference numeral, regardless of the letter.

[0016]

[0021] The plasma deposition process may excite one or more constituent precursors, facilitating film formation on the substrate. Any number of material films may be produced to develop semiconductor structures, including conductive and dielectric films, as well as films for facilitating material transport and removal. For example, a hard mask film may be formed to facilitate substrate patterning while protecting underlying materials that would otherwise be preserved. In many processing chambers, several precursors may be mixed in a gas panel and delivered to the processing region of the chamber where the substrate may be placed. While lid stack components can affect flow distribution into the processing chamber, many other process variables can affect deposition uniformity as well.

[0017]

[0022] As device features shrink in size, tolerances across the substrate surface can shrink, and material property differences across the film can affect device realization and uniformity. Many processing chambers include asymmetric exhaust systems, in which gases are not uniformly exhausted from the processing chamber from all sides of the chamber, creating distortions in the gas outflow. For example, a single-exhaust PECVD chamber may include a foreline conduit (for exhausting gases from the chamber body) located along one side of the chamber, resulting in distortions in gas flow toward that side. This distortion can create non-uniformities in gas flow across the chamber, which can create non-uniformities in gas flow across the substrate. This non-uniformity in gas flow can create differences in film uniformity across the substrate for materials being generated or removed. That is, the resulting substrate will be characterized by varying thickness of deposits across the surface of the substrate or varying film properties. Such variations can be undesirable and ultimately lead to semiconductor failure.

[0018]

[0023] The present technique overcomes these challenges and provides better planar gas flow uniformity as gases are exhausted from a processing chamber. The described processing chamber incorporates flow paths that optimally account for or reduce gas flow distortions within the processing chamber caused by asymmetric exhaust systems, where exhaust is pulled from radial locations around the chamber. Specifically, the flow paths are created to increase exhaust flow along regions of the processing chamber that are offset from the foreline conduit. The present technique may therefore produce improved film deposition, characterized by improved thickness and material property uniformity across the surface of a substrate.

[0019]

[0024] While the remainder of the disclosure will routinely identify specific deposition processes utilizing the disclosed technology, it will be readily understood that the systems and methods are equally applicable to other deposition and cleaning chambers and processes that may occur within the described chambers. Accordingly, the present technology should not be considered limited to use with these specific deposition processes or chambers alone. This disclosure will describe one possible system and chamber that may include lid stack components according to embodiments of the present technology, before further variations and adaptations of this system according to embodiments of the present technology are described.

[0020]

[0025] 1 illustrates a top view of one embodiment of a processing system 100 for deposition, etching, annealing, baking, and curing chambers, according to multiple embodiments. In the figure, a pair of front-opening unified pods (FOUPs) 102 deliver substrates of various sizes that are received by a robot arm 104 and placed in a low-pressure holding area 106 before being placed into one of the substrate processing chambers 108a-f, arranged in tandem sections 109a-c. A second robot arm 110 may be used to transfer substrate wafers from the holding area 106 to and from the substrate processing chambers 108a-f. Each substrate processing chamber 108a-f may be equipped to perform several substrate processing operations, including plasma-enhanced chemical vapor deposition, atomic layer deposition, physical vapor deposition, etching, pre-cleaning, degassing, orientation, and the formation of stacks of semiconductor materials as described herein, in addition to other substrate processes, including annealing, ashing, and the like.

[0021]

[0026] The substrate processing chambers 108a-f may include one or more system components for depositing, annealing, curing, and / or etching a dielectric or other film on a substrate. In one configuration, two pairs of processing chambers (e.g., 108c-d and 108e-f) may be used to deposit a dielectric material on a substrate, and a third pair of processing chambers (e.g., 108a-b) may be used to etch the deposited dielectric. In another configuration, all three pairs of chambers, e.g., 108a-f, may be configured to deposit a stack of alternating dielectric films on a substrate. Any one or more of the described processes may be performed in multiple chambers separate from the fabrication system shown in various embodiments. It should be understood that additional configurations of deposition chambers, etch chambers, annealing chambers, and curing chambers for dielectric films are contemplated by system 100.

[0022]

[0027] 2 shows a schematic cross-sectional view of an exemplary plasma system 200 in accordance with some embodiments of the present technique. The plasma system 200 may include a pair of processing chambers 108 that may be adapted to one or more of the tandem sections 109 described above. It may include a faceplate or showerhead or other components or assemblies in accordance with embodiments of the present technique. The plasma system 200 may generally include a chamber body 202 having a sidewall 212, a bottom wall 216, and an interior sidewall 201 that define a pair of processing regions 220A and 220B. Each of the processing regions 220A-220B may be similarly configured and may include identical components.

[0023]

[0028] For example, processing region 220B, whose components may also be included in processing region 220A, may include a pedestal 228 disposed within the processing region through a passageway 222 formed in the bottom wall 216 of the plasma system 200. The pedestal 228 may provide a heater adapted to support a substrate 229 on an exposed surface of the pedestal, such as a body portion. The pedestal 228 may include a heating element 232, such as a resistive heating element, which may heat and control the temperature of the substrate to a desired process temperature. The pedestal 228 may also be heated by a remote heating element, such as a lamp assembly, or any other heating device. The pedestal 228 may also include electrostatic or vacuum chucking capabilities.

[0024]

[0029] The body of the pedestal 228 may be coupled to the stem 226 by a flange 233. The stem 226 may electrically couple the pedestal 228 to a power outlet or power box 203. The power box 203 may include a drive system that controls the elevation and movement of the pedestal 228 within the processing region 220B. The stem 226 may also include a power interface for providing power to the pedestal 228. The power box 203 may also include an interface for power and temperature indicators (such as a thermocouple interface). The stem 226 may include a base assembly 238 adapted to detachably couple to the power box 203. A perimeter ring 235 is illustrated above the power box 203. In some embodiments, the perimeter ring 235 may be a shoulder adapted as a mechanical stop or land configured to provide a mechanical interface between the base assembly 238 and the top surface of the power box 203.

[0025]

[0030] A rod 230 may be included through a passage 224 formed in the bottom wall 216 of the processing region 220B and may be utilized to position substrate lift pins 261 disposed through the body of the pedestal 228. The substrate lift pins 261 may selectively space the substrate 229 from the pedestal to facilitate exchange of the substrate 229 with a robot utilized to transfer the substrate 229 into and out of the processing region 220B via the substrate transfer port 260.

[0026]

[0031] A chamber lid 204 may be coupled to an upper portion of the chamber body 202. The lid 204 may house one or more precursor delivery systems 208 coupled thereto. The precursor delivery system 208 may include a precursor inlet passage 240. The precursor inlet passage 240 may deliver reactant and cleaning precursors into the processing region 220B via a gas supply assembly 218. The gas supply assembly 218 may include a gas box 248 having a blocker plate 244 disposed intermediate a faceplate 246. A radio frequency (“RF”) source 265 may be coupled to the gas supply assembly 218. The RF source 265 may power the gas supply assembly 218 to facilitate generating a plasma region between the faceplate 246 of the gas supply assembly 218 and the pedestal 228 (which may be the processing region of the chamber). In some embodiments, an RF source may be coupled to other portions of the chamber body 202, such as the pedestal 228, to facilitate plasma generation. A dielectric isolator 258 may be disposed between the lid 204 and the gas supply assembly 218 to prevent RF power from being transmitted to the lid 204. A shadow ring or edge ring 206 that engages the pedestal 228 may be disposed on the periphery of the pedestal 228.

[0027]

[0032] Optional cooling channels 247 may be formed in the gas box 248 of the gas distribution system 208 to cool the gas box 248 or maintain a constant temperature environment during operation. A heat transfer fluid, such as water, ethylene glycol, gas, or a mixture thereof, may be circulated through the cooling channels 247. The gas box 248 may thereby be maintained at a predefined temperature. A liner assembly 227 may be positioned near the sidewalls 201, 212 of the chamber body 202 in the processing region 220B to prevent the sidewalls 201, 212 from being exposed to the processing environment in the processing region 220B. The liner assembly 227 may include a circumferential pumping cavity 225. The circumferential pumping cavity 225 may be coupled to a pumping system 264 configured to evacuate gases and by-products from the processing region 220B and control the pressure within the processing region 220B. A plurality of exhaust ports 231 may be formed in the liner assembly 227. The plurality of exhaust ports 231 may be configured to allow the flow of gases from the processing region 220B to the circumferential pumping cavity 225 in a manner that facilitates processing within the system 200.

[0028]

[0033] FIG. 3 shows a schematic partial cross-sectional view of an exemplary processing system 300 in accordance with some embodiments of the present technique. The processing system 300 includes an asymmetric exhaust system. One example shown is a single-exhaust system (e.g., a single-exhaust PECVD chamber) with a single foreline conduit 350. FIG. 3 may show additional details related to components within the system 200, such as the pedestal 228. It is understood that the system 300, in some embodiments, includes any feature or aspect of the system 200 described above, although certain features or aspects of the system 200 may be added to, modified from, or omitted from, the system 300. The system 300 may be used to perform semiconductor processing operations, including deposition of hard mask materials as described above, as well as other deposition, removal, and cleaning operations. The system 300 may show a partial view of the described chamber components that may be incorporated into a semiconductor processing system, and may show a view across the center of the faceplate. The faceplate may be any other size and may include any number of apertures. Any aspect of system 300 may also be incorporated with other processing chambers or systems, as can certainly be understood by one skilled in the art.

[0029]

[0034] The system 300 may include a processing chamber including a faceplate 305, through which precursors may be delivered for processing and which may be coupled to a power source to generate a plasma within the processing region of the chamber. The chamber may also include a chamber body 310, which may include sidewalls and a base 340, as shown. A pedestal or substrate support 315 may extend through the chamber base 340, as previously described. The substrate support may include a support platen 320, which may support a semiconductor substrate 322. The support platen 320 may be coupled to a shaft 325, which may extend through the chamber base 340. In some embodiments, a heating element used to heat the interior of the chamber body 310 from below may be mounted on the interior of the base 340. Alternatively, the base 340 itself may be the heating element.

[0030]

[0035] As described above, semiconductor processing involves flowing multiple gases over the semiconductor substrate 322 and throughout the chamber body 310. These gases need to be exhausted from the chamber body 310 during different stages of the process. In some embodiments, the exhaust mechanism of the system 300 incorporates a pumping plate 330, which may be a plate including one or more outlet apertures (e.g., outlet aperture 335 shown in FIG. 3 ) configured to control the flow of gases from the chamber body 310, as will be described in further detail below. The multiple outlet apertures in the pumping plate 330 may be configured to provide a path for directing gases toward an exhaust space 355. In one example shown in FIG. 3 , the exhaust space 355 may be an open channel between the pumping plate and the base 340 of the system 300. The open channel is fluidly coupled to a foreline conduit 350. As described above, the chamber system may be a tandem chamber system, and both chambers may be individually exhausted into the foreline or system exhaust. The exhaust space of each chamber may be independent and isolated within each chamber so as to remain fluidly separated from other chambers in the system. In some embodiments, a foreline conduit 350 may be coupled to a reduced pressure source to aid in exhausting gases from the chamber body 310. In some embodiments, the pumping plate 330 may include a central aperture 370 through which the shaft 325 extends. In some embodiments, a gap may exist between the edge of the central aperture 370 and the outer diameter of the shaft 325. The gap may provide an additional path for gases to travel to the foreline conduit 350. The dashed arrows indicate the flow of gas from a chamber inlet (not shown) at the top of the chamber, over and around the substrate 322 and support platen 320, then through multiple exit apertures (e.g., exit aperture 335) and the central aperture 370 in the pumping plate 330, into the exhaust space 355, and finally out of the foreline conduit 350.

[0031]

[0036] As described above, processing chambers with asymmetric exhaust systems can tend to cause non-uniform flow within the chamber body as gases are exhausted from the chamber body. For example, in a conventional single exhaust system, a foreline conduit, which may be coupled to a vacuum source, may be located on one side of the chamber body. As gases are exhausted from the chamber body, they may flow from a central aperture (e.g., similar to central aperture 370 in FIG. 3 ) through an exhaust space toward the foreline conduit. In such systems, the asymmetric location of the foreline conduit can easily distort the flow of gas toward the foreline conduit, causing non-uniform flow throughout the chamber as the gases are exhausted. The effects of such non-uniform flow can cause differences in film uniformity across a substrate, resulting in substrates characterized by variations in deposition thickness or film properties across the surface of the substrate.

[0032]

[0037] 4A-4B show top views of exemplary embodiments of a pumping plate 400. Embodiments of the pumping plate 400 may reduce or prevent distortion in the exhaust of gases and may act to create additional flow paths that may create a more uniform planar flow as the gases exit the chamber body through the foreline conduit. The pumping plate may be fabricated from any suitable material (e.g., aluminum, alumina, aluminum nitride). In some embodiments, the pumping plate may include one or more outlet apertures for controlling the flow of gases from the chamber body of a semiconductor processing system, as described above. For example, referring to FIG. 4A, the pumping plate 400 may include six outlet apertures 410 configured to communicate gases from the chamber body (e.g., chamber body 310 in FIG. 3) to the exhaust space (e.g., 355 in FIG. 3). The plurality of outlet apertures 410 may be any suitable shape (e.g., circular, rectangular, triangular) or size (e.g., 0.5 cm to 1 cm, 1 cm to 2.5 cm, 0.5 to 2.5 cm), and the exemplary pumping plate may include any number of apertures in embodiments of the present technology. The pumping plate 400 further includes a central aperture 370 through which a shaft (e.g., shaft 325 in FIG. 3) may extend. In the illustrated embodiment, the plurality of outlet apertures 410 are positioned along the pumping plate opposite the expected location of the foreline conduit when the pumping plate 400 is assembled into a semiconductor processing system. FIG. 4A shows a chamber-outlet outline 450 at the expected location of the foreline conduit (e.g., base 340 directly below pumping plate 330 as shown in FIG. 3). 4A, multiple outlet apertures 410 are arranged along an arcuate path on opposite sides of the foreline conduit and are defined along a radius R relative to the center of the pumping plate. In some embodiments, the semiconductor processing system may be configured such that the foreline conduit at the base also lies along the radius R. A single imaginary circular path may thereby follow the multiple outlet apertures and the foreline conduit.In some embodiments, the outlet apertures may be arranged symmetrically about an axis of the pumping plate (e.g., an axis extending along a diameter of the pumping plate). For example, referring to FIG. 4A, the outlet apertures 410 are arranged symmetrically about axis I (e.g., three outlet apertures 410 on the left side of axis I are mirrored by three outlet apertures 410 on the right side of axis I). In some embodiments, axis I may extend parallel to the exhaust space.

[0033]

[0038] As a means of combating the above-described distortions in gas flow, the outlet apertures may be arranged asymmetrically along an axis other than axis I (e.g., an axis perpendicular to axis I). As shown in FIG. 4A, this asymmetry biases gas flow through one side of pumping plate 400 opposite the foreline conduit (shown by outline 450). This may help reduce non-uniformities in gas flow within the chamber body, including in the region adjacent the support platen and across the substrate. In some embodiments, axis I may extend parallel to the exhaust space.

[0034]

[0039] FIG. 4B illustrates another embodiment of a pumping plate. The illustrated pumping plate 401 is similar to pumping plate 400, except that pumping plate 401 includes ten outlet apertures 410. They are also asymmetrically positioned, biased toward one side of pumping plate 401 opposite the foreline conduit (shown by outline 450). As shown, apertures 410 follow a longer arcuate path than apertures 410 in pumping plate 400. Note that the illustrated embodiments are not necessarily to scale. In some embodiments, the arcuate path may be positioned opposite the foreline conduit at an arc angle of 180 degrees or less. In other embodiments, the arcuate path may be positioned opposite the foreline conduit at an arc angle of more than 180 degrees. In other embodiments, any suitable arc angle between approximately 30 degrees and 345 degrees may be employed. In some embodiments, the pumping plate may lack any apertures along an arcuate path having a midpoint extending across the foreline conduit to limit direct fluid flow to the outlet. Such an arcuate path characterized by no apertures may extend no more than about 330 degrees around the pumping plate, no more than about 180 degrees around the pumping plate, no more than about 30 degrees around the pumping plate, or less. In some embodiments, a particular pumping plate may be selected based on the chamber flow. That is, different chamber flows may require different pumping plates (each with different characteristics such as outlet aperture size, outlet aperture location, central aperture size, etc.) from a set of potential pumping plates.

[0035]

[0040] FIG. 5 is an enlarged cross-sectional view of the system of FIG. 3 , showing the shaft 325 extending through the pumping plate 330 and base 340 via a central aperture 370. The central aperture 370 may be any suitable shape or size. As described above, conventional systems may use a central aperture similar to the central aperture 370 as the sole or primary path for exhausting gases through the foreline conduit via the exhaust space. Embodiments of the present technology may attempt to reduce the flow of gas through the central aperture 370, for example, to increase the effectiveness of the outlet apertures in the pumping plate 330 (see, e.g., FIGS. 4A-4B , outlet apertures 410), thereby helping to counter distortions in the flow, as described above. In some embodiments, the gap between the edge of the central aperture 370 and the outer diameter of the shaft 325 may be minimized to reduce the flow of gas. For example, the gap may be reduced to approximately 1 cm or less, between 1 cm and 1 mm, or approximately 1 mm or less. In some embodiments, the pumping plate 330 and the base 340 may include one or more extensions along the exhaust volume 355 to reduce gas flow through the central aperture 370. For example, as shown in FIG. 5 , the base 340 may include a first extension 545, and the pumping plate 330 may include a second extension 535 (e.g., extending circumferentially around the shaft 325). In this example, the first extension 545 and the second extension 535 may be configured to at least partially vertically overlap to restrict gas flow. With reference to FIG. 5 , the degree of overlap may be characterized by a minimum vertical gap d between the base and the pumping plate (e.g., between the first extension 545 and the pumping plate 330, or between the second extension 535 and the base 340). In some embodiments, the minimum vertical gap between the base and the pumping plate may be about 2 mm or less. In some embodiments, first extension 545 and second extension 535 may have the same or similar vertical height, such that they extend approximately the same distance. In some embodiments, the extensions may extend perpendicular to base 340 or pumping plate 330, or alternatively, may extend at an angle.

[0036]

[0041] In some embodiments, a method of semiconductor processing may include flowing a carbon-containing precursor into a processing chamber. The processing chamber may include a faceplate and a substrate support on which a substrate is disposed, the substrate support extending through a base of the processing chamber. The method may further include generating a plasma of the carbon-containing precursor in the processing chamber. The method may further include depositing a carbon-containing material on the substrate. The method may further include evacuating gas from a chamber body of the processing chamber via a pumping plate, such as those described in this disclosure.

[0037]

[0042] 6 illustrates operations of an exemplary method 600 of semiconductor processing in accordance with some embodiments of the present technique. The method may be performed in various processing chambers, including the processing system 200 described above, which may include pumping plates and other features in accordance with multiple embodiments of the present technique. Method 600 may include several optional operations that may or may not be specifically associated with some embodiments of the method in accordance with the present technique.

[0038]

[0043] Method 600 may include a processing method that may include operations for forming a hard mask film or other deposition operations. The method may include optional operations before the start of method 600, or the method may include additional operations. For example, method 600 may include operations performed in a different order than those illustrated. In some embodiments, method 600 may include flowing one or more precursors into a processing chamber in operation 605. For example, the precursors may be flowed into a chamber such as that included in system 200, and the precursors may be flowed through one or more of a gas box, a blocker plate, or a face plate before delivering the precursors into a processing region of the chamber. In some aspects, the precursors may be or include a carbon-containing precursor.

[0039]

[0044] In some embodiments, a pumping plate may be included in the system near the base, such as around the shaft portion. Any of the other pumping plate characteristics described above may also be included, including any aspect of pumping plates 330, 400, and 401, such as various asymmetric exit apertures. Similarly, features for reducing gas flow through the system's central aperture, such as first extension 545 and second extension 535, and minimizing the size of the central aperture, may also be included. In operation 610, a plasma of the precursor may be generated in the processing region, such as by applying RF power to the faceplate to generate the plasma. In operation 615, a material generated in the plasma, such as a carbon-containing material, may be deposited on a substrate.

[0040]

[0045] In some embodiments, testing of the substrate may be performed after processing. Based on the effect on the substrate, pumping plate characteristics (e.g., number of exit apertures, size of exit apertures, size of center aperture) may be adjusted by switching between different pumping plates. Similarly, features such as extensions may be adjusted. This may provide feed-forward control of the process and selective adjustment of the process, limiting losses from non-uniformity due to chamber effects.

[0041]

[0046] In the foregoing description, for purposes of explanation, numerous details are presented in order to facilitate an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that particular embodiments may be practiced without some of these details, or with additional details.

[0042]

[0047] Although several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative constructions, and equivalents may be used without departing from the spirit of the embodiments. Additionally, some well-known processes and elements have not been described to avoid unnecessarily obscuring the technology. Therefore, the above description should not be construed as limiting the scope of the technology.

[0043]

[0048] Where a range of values ​​is given, unless the context clearly dictates otherwise, each intervening value between the upper and lower limit of that range is specifically disclosed, to the smallest unit of the lower limit. Any subranges between any stated or unstated intervening value in a stated range, and any other stated or intervening value in that stated range, are also included. The upper and lower limits of these smaller ranges may be individually included or excluded from the range, and each range in which either, neither, or both limits are included in the subranges is also encompassed within the scope, subject to any explicitly excluded limit in the stated range. When a stated range includes one or both of the limits, ranges excluding either or both of those included limits are also included.

[0044]

[0049] As used in this specification and claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, a reference to a "heater" includes a plurality of such heaters, a reference to an "aperture" includes a reference to one or more apertures and equivalents thereof known to those skilled in the art, and so forth.

[0045]

[0050] Additionally, the terms "comprise(s)", "comprising", "contain(s)", "containing", "include(s)", and "including", when used in this specification and claims, are intended to specify the presence of stated features, integers, components, or steps, but do not exclude the presence or addition of one or more other features, integers, components, steps, operations, or groups.

Claims

1. a chamber body having a sidewall and a base; a substrate support extending through the base, a support platen configured to support a semiconductor substrate; and a substrate support comprising a shaft coupled to the support platen; a foreline conduit in the base configured to exhaust gases from the chamber body, the foreline conduit being offset from a center of the base; an exhaust space coupled to the foreline conduit; and a pumping plate including a central aperture through which the shaft extends, the pumping plate further including one or more exit apertures for directing at least a portion of the gas from the chamber body to the exhaust space, the one or more exit apertures being positioned along the pumping plate at one or more locations opposite the foreline conduit to reduce gas flow non-uniformities adjacent the support platen; the pumping plate is circular, and the one or more outlet apertures include a plurality of outlet apertures disposed along an arcuate path opposite the foreline conduit and defined along a first radius relative to a center of the pumping plate; the plurality of outlet apertures are symmetrically disposed about a first axis of the pumping plate extending along a diameter of the pumping plate; the arcuate path has an arc angle between about 30 degrees and 345 degrees; the exhaust space is formed between the base and the pumping plate, the base includes a first extension extending toward the pumping plate; The pumping plate includes a second extension extending toward the base.

2. 2. The semiconductor processing system of claim 1, wherein said foreline conduit of said base is positioned along said first radius.

3. 2. The semiconductor processing system of claim 1, wherein said plurality of outlet apertures are asymmetrically disposed along a second axis of said pumping plate, said second axis being perpendicular to said first axis.

4. 2. The semiconductor processing system of claim 1, wherein said first axis is parallel to said exhaust space.

5. 10. The semiconductor processing system of claim 1, wherein a gap between an edge of the central aperture and an outer diameter of the shaft is about 1 cm or less, the gap being configured to direct another portion of the gas from the chamber body to the exhaust space.

6. 6. The semiconductor processing system of claim 5, wherein said gap is about 1 mm or less.

7. A semiconductor processing system as described in claim 5, wherein the first extension and the second extension are configured to at least partially overlap vertically so as to restrict gas flow from the chamber body to the foreline conduit through the central opening.

8. 8. The semiconductor processing system of claim 7, wherein a minimum vertical gap between said base and said pumping plate is about 2 mm or less.

9. 9. The semiconductor processing system of claim 8, wherein said minimum vertical gap between said base and said pumping plate is about 1.6 mm.

10. 1. A pumping plate for exhausting gases from a chamber body of a semiconductor processing system, comprising: a central aperture for receiving a shaft extending through the chamber body, the central aperture being sized to minimize a gap between an edge of the central aperture and an outer diameter of the shaft to about 1 cm or less, the central aperture being configured to provide a first path for directing gas from the chamber body toward an exhaust space; and a plurality of outlet apertures for providing a plurality of second paths for directing the gas from the chamber body toward the exhaust space, the outlet apertures being disposed along the pumping plate at one or more locations configured to be opposite an outlet of the chamber body when the pumping plate is disposed within the chamber body; the pumping plate is circular, and the plurality of outlet apertures are disposed along an arcuate path opposite the outlet of the chamber body and defined along a radius relative to a center of the pumping plate; the plurality of outlet apertures are symmetrically disposed about a first axis of the pumping plate extending along a diameter of the pumping plate; the arcuate path has an arc angle between about 30 degrees and 345 degrees; the pumping plate includes an extension extending perpendicular to the pumping plate; Pumping plate.

11. 11. The pumping plate of claim 10, wherein the plurality of outlet apertures are asymmetrically disposed along a second axis of the pumping plate, the second axis being perpendicular to the first axis.

12. Flowing a carbon-containing precursor into a process chamber, the process chamber comprising a faceplate and a substrate support on which a substrate is disposed, the substrate support extending through a base of the process chamber, the substrate support comprising: a support platen on which the substrate is placed; and flowing a carbon-containing precursor, the carbon-containing precursor comprising a shaft coupled to the support platen; generating a plasma of the carbon-containing precursor in the processing chamber; depositing a carbon-containing material on the substrate; and exhausting gas from a chamber body of the processing chamber through a pumping plate through which the shaft extends, the pumping plate including one or more outlet apertures for directing at least a portion of the gas from the chamber body to an exhaust space coupled to a foreline conduit in the base, the one or more outlet apertures being disposed along the pumping plate at one or more locations opposite the foreline conduit to reduce non-uniformity in gas flow within the exhaust space; the pumping plate is circular, and the one or more outlet apertures include a plurality of outlet apertures disposed along an arcuate path opposite the foreline conduit and defined along a first radius relative to a center of the pumping plate; the plurality of outlet apertures are symmetrically disposed about a first axis of the pumping plate extending along a diameter of the pumping plate; the plurality of outlet apertures are asymmetrically disposed along a second axis of the pumping plate, the second axis being perpendicular to the first axis; the arcuate path has an arc angle between about 30 degrees and 345 degrees; the exhaust space is formed between the base and the pumping plate, the base includes a first extension extending toward the pumping plate; the pumping plate includes a second extension extending toward the base; Methods of semiconductor processing.

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