Vacuum Heat Treatment Equipment

Abstract

To provide an apparatus that improves throughput.SOLUTION: A vacuum heat treatment apparatus includes: a vacuum chamber; a stage disposed in the vacuum chamber and having a substrate placing surface on which a substrate is placed; a heater provided within the stage; a partition member that partitions a part of an internal space of the vacuum chamber to form a gas processing space between itself and the substrate placing surface of the stage; and a gas supply that supplies gas to the gas processing space.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a vacuum heat treatment apparatus. [Background technology]

[0002] Patent document 1 discloses a substrate accommodating unit that is provided in a substrate transport device in which multiple vacuum transport units are connected in series, each having a substrate transport mechanism inside for holding and transporting a substrate, and that is adjacent to the vacuum transport units in the direction of connection, and that has a hollow housing in which a substrate loading / unloading opening for the vacuum transport units is formed in a side wall on one side in the direction of connection, a partition member that is provided within the housing so as to be movable in the vertical direction, and a drive mechanism that moves the partition member up and down, and when the space within the housing is divided in the vertical direction, the space on the side of the loading / unloading opening is defined as a first space and the space on the opposite side of the loading / unloading opening is defined as a second space, when the first space and the second space are connected to each other, by moving the partition member in the vertical direction, the first space and the second space are airtightly separated by the partition member. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-72424 Summary of the Invention [Problem to be solved by the invention]

[0004] In one aspect, the present disclosure provides a vacuum heat treatment apparatus that improves throughput. [Means for solving the problem]

[0005] In order to solve the above problem, according to one aspect, there is provided a method for manufacturing a vacuum chamber, a vacuum chamber, and a stage disposed in the vacuum chamber and having a substrate mounting surface on which a substrate is mounted. 、a partition member that partitions a part of the internal space of the vacuum chamber and forms a gas processing space between itself and the substrate mounting surface of the stage; and a gas supply unit that supplies gas to the gas processing space. a vertical drive mechanism that drives the partition member in the vertical direction; Equipped with the vertical drive mechanism includes substrate lift pins, partition member lift pins, a support plate to which the substrate lift pins and the partition member lift pins are fixed, and a drive device that drives the support plate; A vacuum heat treatment apparatus is provided. [Effects of the Invention]

[0006] According to one aspect, it is possible to provide a vacuum heat treatment apparatus that improves throughput. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a cross-sectional view illustrating an example of the configuration of a vacuum heat treatment apparatus. [Figure 2] FIG. 10 is a bottom view of a partition member. [Figure 3] 10 is an example of a flowchart showing the operation of a vacuum heat treatment device. [Figure 4] FIG. 10 is a cross-sectional view of an example of the vacuum heat treatment apparatus when the substrate lift pins and the partition member lift pins are in the middle of ascending. [Figure 5] FIG. 10 is a cross-sectional view of the vacuum heat treatment apparatus after the substrate lift pins and the partition member lift pins have completed rising. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0009] The vacuum heat treatment apparatus 100 will be described with reference to Fig. 1. Fig. 1 is an example of a cross-sectional view for explaining an example of the configuration of the vacuum heat treatment apparatus 100. Here, the vacuum heat treatment apparatus 100 is an apparatus (also referred to as a degassing apparatus) that heats a substrate W in a vacuum container 10 and supplies an inert gas to a gas treatment space in which the substrate W is placed to create a high pressure (for example, 5 to 20 Torr) to sublimate a material to be removed from the surface of the substrate W (for example, a film (e.g., an organic film) formed in a previous process) and remove the material to be removed from the surface of the substrate W.

[0010] The vacuum heat treatment apparatus 100 includes a vacuum vessel 10, a mounting section 20, a partition member 30, a gas supply section 40, a vertical drive mechanism 50, an exhaust device 60, and a control section .

[0011] The vacuum vessel 10 includes a vacuum vessel body 11 and a lid 12. The vacuum vessel body 11 is made of a metal material such as aluminum and has a generally cylindrical shape with a bottom and an open top. The vacuum vessel body 11 accommodates a substrate W such as a semiconductor wafer. A loading / unloading port 13 is formed in a side wall of the vacuum vessel body 11 for loading and unloading the substrate W. The loading / unloading port 13 is opened and closed by a gate valve 14. An exhaust port 15 is formed in the bottom wall of the vacuum vessel body 11. The exhaust port 15 is connected to an exhaust device 60. The lid 12 is made of a metal material such as aluminum and is disposed so as to close the top opening of the vacuum vessel body 11. The space between the vacuum vessel body 11 and the lid 12 is airtightly sealed by a sealing member (not shown).

[0012] The mounting unit 20 is disposed within the vacuum chamber 10. The mounting unit 20 includes a stage 21 on which a substrate W is mounted. The stage 21 has a substrate mounting surface on which the substrate W is mounted in a central region of its upper surface. The stage 21 also has an annular member mounting surface on which an annular member 25 is mounted in an outer peripheral annular region radially outward of the substrate mounting surface on its upper surface. The substrate mounting surface is formed at a higher position than the annular member mounting surface. The stage 21 is formed of a dielectric material such as ceramics or a metal material such as aluminum, stainless steel, or nickel, and includes a heater 22 therein for heating the substrate W. The heater 22 generates heat upon receiving power from a heater power supply 23. The substrate W is maintained at a predetermined temperature by controlling the output of the heater 22 based on a temperature signal from a thermocouple (not shown) disposed near the upper surface of the stage 21. The stage 21 also has multiple (e.g., three) through-holes 24 penetrating the stage 21. In the through holes 24, substrate lift pins 51, which will be described later, are disposed.

[0013] The mounting part 20 also has an annular member 25. The annular member 25 is made of a metal material such as stainless steel or titanium, is a substantially annular-shaped member, and is disposed on an annular member mounting surface that is provided on the outer periphery of the substrate mounting surface. The annular member 25 forms a gas flow path between itself and a partition member 30 (described later), and is a member for adjusting the conductance so that it is constant in the circumferential direction of the substrate W.

[0014] Furthermore, the upper surface of the annular member 25 may be formed to a position higher than the substrate mounting surface of the stage 21. In this configuration, the inner peripheral surface of the annular member 25 is disposed at a position higher than the substrate mounting surface of the stage 21. As a result, when the substrate W placed on the substrate mounting surface shifts in the horizontal direction, the side surface of the substrate W abuts against the inner peripheral surface of the annular member 25. In this way, the annular member 25 functions as a guide member that limits the shift of the substrate W placed on the substrate mounting surface and guides the position of the substrate W.

[0015] The partition member 30 is made of a heat-resistant material such as stainless steel or titanium, and separates a portion of the internal space of the vacuum chamber 10 to form a gas processing space (described later) between itself and the substrate mounting surface of the stage 21. The partition member 30 is arranged to cover the mounting part 20 and the substrate W mounted on the mounting part 20, thereby forming a gas processing space into which an inert gas is supplied between the mounting part 20 and the partition member 30. The partition member 30 is configured to be movable vertically by a vertical drive mechanism 50 (described later). That is, the partition member 30 is configured to be movable between a closed position and an open position. The closed position is a position (also referred to as a lowered position) in which the partition member 30 is arranged to cover the mounting part 20 and the substrate W mounted on the mounting part 20, forming a gas processing space, as shown in FIG. 1 . The open position is a position (also referred to as a raised position) in which the partition member 30 is lifted to allow the substrate W to be transported between the partition member 30 and the mounting part 20, as shown in FIG. 5 (described later).

[0016] Fig. 2 is an example of a bottom view of the partition member 30. In Fig. 2, the positions of a gas supply pipe 42, substrate lift pins 51, and partition member lift pins 52, which will be described later, projected onto the partition member 30 are shown by dotted lines.

[0017] The partition member 30 has a top surface 31, a first cylindrical surface 32, an annular surface 33, a second cylindrical surface , a gas supply passage 35, and a contact portion .

[0018] The top surface 31 is a substantially circular flat surface that faces the upper surface of the substrate W placed on the stage 21. The top surface 31 is located at a position higher than the upper surface of the substrate W in the closed position (see FIG. 1).

[0019] The first cylindrical surface 32 is a cylindrical surface that is positioned radially outward of the outer peripheral surface of the substrate W placed on the stage 21. The first cylindrical surface 32 has an upper end connected to the top surface 31 and a lower end connected to the annular surface 33. This forms a cylindrical gas processing space whose upper surface is defined by the top surface 31, whose lower surface is defined by the substrate placement surface of the stage 21, and whose outer peripheral surface is defined by the first cylindrical surface 32. The substrate W is placed in the gas processing space. Furthermore, in the closed position (see FIG. 1), a space (gap) through which gas can flow is formed between the first cylindrical surface 32 and the outer peripheral surface of the substrate W.

[0020] The annular surface 33 is a substantially annular flat surface facing the upper surface of the annular member 25 arranged on the stage 21. In the closed position (see FIG. 1), the annular surface 33 is arranged at a position higher than the upper surface of the substrate W placed on the annular member 25, and a space (gap) through which gas can flow is formed between the annular surface 33 and the upper surface of the annular member 25.

[0021] The second cylindrical surface 34 is a cylindrical surface that is disposed radially outward of the outer circumferential surface of the annular member 25 disposed on the stage 21. The upper end of the second cylindrical surface 34 is connected to the annular surface 33. In the closed position (see FIG. 1), a space (gap) through which gas can flow is formed between the annular surface 33 and the outer circumferential surface of the annular member 25.

[0022] The gas supply passage 35 is formed to communicate with the gas processing space from a position corresponding to an outlet of a gas supply pipe 42, which will be described later. As a result, the gas discharged from the gas supply pipe 42 is supplied to the gas processing space via the gas supply passage 35.

[0023] In other words, the rear surface of the partition member 30 has a first recess (first dug portion) that forms the top surface 31 and the first cylindrical surface 32, a second recess (second dug portion) that forms the annular surface 33 and the second cylindrical surface 34 and that communicates with the first recess, and a third recess (third dug portion) that forms a gas supply channel 35 and that communicates with the first recess. When the partition member 30 is positioned at the closed position, the first recess forms a gas processing space between itself and the substrate mounting surface of the stage 21. When the partition member 30 is positioned at the closed position, the second recess forms an exhaust channel between itself and the annular member 25 that communicates with the gas processing space. The width of the exhaust channel is, for example, 2 mm or less. When the partition member 30 is positioned at the closed position, the third recess forms a supply channel that communicates between the outlet of the gas supply pipe 42 and the gas processing space.

[0024] The top surface 31, the first cylindrical surface 32, the annular surface 33, the second cylindrical surface 34, and the gas supply passage 35 are blast-treated or blast-treated and thermal-spray-treated surfaces. That is, the surfaces of the first recess of the partition member 30 that form the gas processing space (top surface 31, first cylindrical surface 32) are blast-treated or blast-treated and thermal-spray-treated surfaces. The surfaces of the second recess of the partition member 30 that form the exhaust passage from the gas processing space (annular surface 33, second cylindrical surface 34) are blast-treated or blast-treated and thermal-spray-treated surfaces. The surface of the third recess of the partition member 30 that forms the supply passage to the gas processing space (gas supply passage 35) is blast-treated or blast-treated and thermal-spray-treated surfaces.

[0025] The blasting treatment promotes the adsorption of the sublimated removal target material. In the blasting treatment, it is preferable that the surface roughness is, for example, 2.0 (μm) or more and 10 (μm) or less in terms of arithmetic mean roughness Ra.

[0026] The thermal spraying process prevents peeling of the object to be removed that has been adsorbed on the surface of the partition member 30. Examples of the thermal spraying process include aluminum thermal spraying, alumina thermal spraying, and yttria thermal spraying. In the thermal spraying process, it is preferable that the surface roughness is, for example, 15 μm or more and 30 μm or less in terms of arithmetic mean roughness Ra.

[0027] The contact portion 36 comes into contact with the partition member lift pin 52 when the partition member lift pin 52, which will be described later, moves up.

[0028] Returning to FIG. 1, the gas supply unit 40 supplies an inert gas to the gas processing space. The inert gas may be, for example, argon (Ar) gas or nitrogen (N2) gas. The gas supply unit 40 has a gas supply source 41 and a gas supply pipe 42. The gas supply source 41 supplies the inert gas to the gas processing space via the gas supply pipe 42 and the gas supply flow path 35. The gas supply pipe 42 penetrates the vacuum vessel body 11 and is connected to the upper surface of the annular member 25 so as to have an outlet for discharging gas.

[0029] The vertical drive mechanism 50 drives the partition member 30 in the vertical direction. The vertical drive mechanism 50 also places the substrate W on the mounting surface of the stage 21 and lifts the substrate W from the mounting surface of the stage 21. The vertical drive mechanism 50 has substrate lift pins 51, partition member lift pins 52, a support plate 53, a lift shaft 54, a flange 55, a bellows 56, and a drive device 57.

[0030] A plurality of (for example, three) substrate lift pins 51 are provided and arranged in the through holes 24 of the stage 21. The material of the substrate lift pins 51 may be a metal material such as titanium. The lower ends of the substrate lift pins 51 are fixed to a support plate 53.

[0031] A plurality of (for example, three) partition member lift pins 52 are provided and are arranged radially outward from the stage 21. The material of the substrate lift pins 51 may be ceramics such as alumina (Al2O3). The lower ends of the partition member lift pins 52 are fixed to a support plate 53.

[0032] The support plate 53 is formed, for example, in a substantially annular shape. The support plate 53 is connected to a drive unit 57 provided outside the vacuum vessel body 11 via an elevation shaft 54 ​​that penetrates the bottom wall of the vacuum vessel body 11. A flange 55 is attached to the elevation shaft 54 ​​below the vacuum vessel body 11. A bellows 56 is provided between the bottom wall of the vacuum vessel body 11 and the flange 55. The bellows 56 separates the atmosphere inside the vacuum vessel body 11 from the outside air, and expands and contracts in accordance with the elevation movement of the support plate 53. The drive unit 57 drives the support plate 53 in the vertical direction via the drive shaft, thereby driving the substrate lift pins 51 and the partition member lift pins 52 in the vertical direction.

[0033] Although the vertical drive mechanism 50 has been described as being configured to raise and lower the substrate lift pins 51 and the partition member lift pins 52 as a unit using a single drive device 57, the present invention is not limited to this. For example, the vertical drive mechanism 50 may be configured to be able to drive the substrate lift pins 51 and the partition member lift pins 52 independently. Furthermore, the configuration for driving the partition member 30 up and down is not limited to the lift pins, and may be configured such that a drive shaft connected to the partition member 30 is driven by a drive device.

[0034] The exhaust device 60 is configured by, for example, a turbo molecular pump, a dry pump, or the like, and exhausts the inside of the vacuum vessel 10 through the exhaust port 15 .

[0035] The control unit 70 is, for example, a computer, and includes a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), an auxiliary storage device, etc. The CPU operates based on a program stored in the ROM or the auxiliary storage device, and controls the operation of the vacuum heat treatment device 100. The control unit 70 may be provided inside or outside the vacuum heat treatment device 100. When the control unit 70 is provided outside the vacuum heat treatment device 100, the control unit 70 controls the operation of the vacuum heat treatment device 100 via communication means such as wired or wireless.

[0036] Next, an example of the operation of the vacuum heat treatment apparatus 100 will be described with reference to Fig. 3. Fig. 3 is an example of a flowchart showing the operation of the vacuum heat treatment apparatus 100.

[0037] Before the flow starts, the control unit 70 controls the exhaust device 60 to create a desired vacuum atmosphere inside the vacuum chamber 10. The control unit 70 also controls the heater power supply 23 to cause the heater 22 to generate heat, thereby raising the temperature of the stage 21 to a desired temperature.

[0038] In step S101, the substrate W is loaded. The control unit 70 controls the vertical drive mechanism 50 to place the partition member 30 in the open position (see FIG. 5, which will be described later) so that the substrate lift pins 51 protrude from the mounting surface of the stage 21. Next, the control unit 70 opens the gate valve 14 and controls the transfer arm 200 (see FIG. 5, which will be described later) to transfer the substrate W held by the transfer arm 200 into the vacuum chamber 10 via the load / unload port 13 and place it on the substrate lift pins 51. Then, when the transfer arm 200 retreats from the load / unload port 13, the control unit 70 closes the gate valve 14.

[0039] In step S102, the substrate W is placed on the placement part 20, and the partition member 30 is closed. Here, the control unit 70 controls the drive device 57 to lower the substrate lift pins 51 and the partition member lift pins 52. As a result, the substrate W placed on the substrate lift pins 51 is placed on the placement surface of the stage 21. Also, the partition member 30 moves to the closed position (see FIG. 1). As a result, a gas processing space is formed, and the substrate W is placed in the gas processing space.

[0040] In step S103, the control unit 70 controls the gas supply unit 40 to supply inert gas to the gas processing space. The inert gas supplied from the gas supply source 41 is supplied to the gas processing space via the gas supply pipe 42 and the gas supply passage 35. Here, the partition member 30, positioned in the closed position, separates the gas processing space from other spaces within the interior space of the vacuum vessel 10. Therefore, the volume of the gas processing space is smaller than the volume of the interior space of the vacuum vessel 10. Therefore, the pressure within the gas processing space is quickly increased by the inert gas supplied from the gas supply source 41. This reduces the time required to increase the pressure within the gas processing space compared to when the entire interior of the vacuum vessel 10 is pressurized, thereby improving the throughput of the vacuum heat treatment device 100. Furthermore, the consumption of inert gas can be reduced.

[0041] The substrate W placed on the stage 21 is heated by the heater 22. This brings the substrate W to a predetermined high-temperature state (e.g., 100°C to 450°C) and exposes the substrate W to an inert gas atmosphere at a predetermined high pressure (e.g., 5 to 20 Torr), thereby sublimating substances to be removed formed on the substrate W (e.g., a film formed in a previous process, moisture adsorbed on the substrate W, etc.). The used inert gas and the sublimated substances to be removed are then exhausted into the internal space of the vacuum vessel 10 by the pressure difference between the gas processing space and the internal space of the vacuum vessel 10 through the gap between the first cylindrical surface 32 and the outer circumferential surface of the substrate W, the gap between the annular surface 33 and the upper surface of the annular member 25, and the gap between the annular surface 33 and the outer circumferential surface of the annular member 25. The used inert gas and the sublimated substances to be removed are then exhausted to the outside of the vacuum vessel 10 by the exhaust device 60.

[0042] Here, since the inner surface of the partition member 30 has been subjected to blasting or the like, the material to be removed that has sublimated from the substrate W adheres to the inner surface of the partition member 30. This prevents the sublimated material from spreading widely over the inner wall surface of the vacuum vessel 10. In other words, the material to be removed that adheres to the inner wall surface of the vacuum vessel 10 can be reduced, the interval between cleanings of the vacuum vessel 10 can be extended, the downtime of the vacuum heat treatment apparatus 100 can be reduced, and the throughput of the vacuum heat treatment apparatus 100 can be improved.

[0043] In step S104, the control unit 70 controls the gas supply unit 40 to stop the supply of the inert gas to the gas processing space.

[0044] In step S105, the partition member 30 is opened, and the substrate W is lifted from the platform 20. Here, the control unit 70 controls the driving device 57 to raise the substrate lift pins 51 and the partition member lift pins 52.

[0045] 4 is an example of a cross-sectional view of the vacuum heat treatment apparatus 100 when the substrate lift pins 51 and the partition member lift pins 52 are in the middle of rising. As the support plate 53 rises, the partition member lift pins 52 come into contact with the contact portions 36 of the partition member 30 before the substrate lift pins 51 come into contact with the rear surface of the substrate W, as shown in FIG.

[0046] 5 is an example of a cross-sectional view of the vacuum heat treatment apparatus 100 after the substrate lift pins 51 and the partition member lift pins 52 have completed rising. As the support plate 53 rises further, the substrate lift pins 51 come into contact with the back surface of the substrate W, lifting the substrate W from the mounting surface of the stage 21, as shown in FIG. 5. The partition member 30 also rises further and stops at the open position.

[0047] In step S106, the substrate W is unloaded. The control unit 70 opens the gate valve 14 and controls the transfer arm 200 to insert the transfer arm 200 into the vacuum chamber 10 through the load / unload port 13 and receive the substrate W placed on the substrate lift pins 51. Then, when the transfer arm 200 holding the substrate W retreats from the load / unload port 13, the control unit 70 closes the gate valve 14.

[0048] Thereafter, the process returns to step S101, and the next substrate W is subjected to the same processing.

[0049] As described above, when the partition member 30 of the vacuum heat treatment apparatus 100 is placed in the closed position (see FIG. 1) by the vertical drive mechanism 50, it partitions off a portion of the internal space of the vacuum vessel 10, forming a gas processing space between the partition member 30 and the substrate mounting surface of the stage 21. The gas supply unit 40 then supplies an inert gas to the gas processing space, creating a high-pressure inert gas atmosphere (e.g., 5 to 20 Torr) around the substrate W placed in the gas processing space. By reducing the space to which the gas supply unit 40 supplies the inert gas in this way, the time required to increase the pressure in the gas processing space is shortened, improving the throughput of the vacuum heat treatment apparatus 100. Furthermore, the amount of inert gas consumed can be reduced.

[0050] Furthermore, since the inner surface of the partition member 30 is blasted, the material to be removed that sublimes from the substrate W is adsorbed in the vicinity of the substrate W. This reduces the material to be removed that adheres to the inner wall surface of the vacuum vessel 10, lengthens the interval between cleanings of the vacuum vessel 10, reduces downtime of the vacuum heat treatment apparatus 100, and improves the throughput of the vacuum heat treatment apparatus 100.

[0051] The present invention is not limited to the configurations described in the above embodiments, but may be combined with other elements, etc. These aspects can be changed without departing from the spirit of the present invention, and can be appropriately determined depending on the application form. [Explanation of symbols]

[0052] W substrate 10 Vacuum container 11 Vacuum vessel body 12 Lid 13 Loading / unloading entrance 14 Gate valve 15 exhaust port 20 Placement section 21 Stages 22 Heater 23 Heater power supply 24 through holes 25 Annular member 30 Partition member 31 Top surface (first recess) 32 First cylindrical surface (first recess) 33 Torus surface (second recess) 34 Second cylindrical surface (second recess) 35 gas supply passage (third recess) 36 Contact part 40 Gas supply unit 41 Gas supply source 42 Gas supply piping 50 Up and down drive mechanism 51 PCB lift pin 52 Partition member lift pin 53 Support plate 54 Elevating axis 55 Tsuba 56 Bellows 57 Drive unit 60 Exhaust system 70 Control Unit 100 Vacuum heat treatment device 200 Transfer arm

Claims

1. A vacuum vessel; a stage disposed within the vacuum chamber and having a substrate mounting surface on which a substrate is mounted; a partition member that partitions a part of the internal space of the vacuum chamber and forms a gas processing space between itself and the substrate mounting surface of the stage; a gas supply unit that supplies gas to the gas processing space; a vertical drive mechanism that drives the partition member in the vertical direction, The up-down drive mechanism is a substrate lift pin; A partition member lift pin; a support plate to which the substrate lift pins and the partition member lift pins are fixed; a drive device that drives the support plate; Vacuum heat treatment equipment.

2. A vacuum vessel; a stage disposed within the vacuum chamber and having a substrate mounting surface on which a substrate is mounted; a partition member that partitions a part of the internal space of the vacuum chamber and forms a gas processing space between itself and the substrate mounting surface of the stage; a gas supply unit that supplies gas to the gas processing space, the stage includes an annular member disposed on an outer periphery of the substrate mounting surface, the gas supply unit has a discharge port that discharges gas onto an upper surface of the annular member, The partition member is a first recess that forms the gas processing space between itself and the substrate mounting surface of the stage; a second recessed portion that forms an exhaust flow path communicating with the gas processing space between the second recessed portion and the annular member; a third recess communicating with the first recess from a position corresponding to the discharge port; Vacuum heat treatment equipment.

3. The surface of the first recess is a blast-treated surface. The vacuum heat treatment device according to claim 2 .

4. The surface of the first recess is a treated surface that has been subjected to blasting and thermal spraying. The vacuum heat treatment device according to claim 2 .

5. The surfaces of the first recess and the second recess are blast-treated surfaces. The vacuum heat treatment device according to claim 2 .

6. The surfaces of the first recess and the second recess are treated surfaces that have been subjected to blasting and thermal spraying. The vacuum heat treatment device according to claim 2 .

7. The surfaces of the first recess, the second recess, and the third recess are treated surfaces that have been subjected to blasting. The vacuum heat treatment device according to claim 2 .

8. The surfaces of the first recess, the second recess, and the third recess are treated surfaces that have been subjected to blasting and thermal spraying. The vacuum heat treatment device according to claim 2 .

9. Further comprising a heater provided within the stage. The vacuum heat treatment device according to any one of claims 1 to 8.

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